U.S. patent number 3,859,178 [Application Number 05/434,286] was granted by the patent office on 1975-01-07 for multiple anodization scheme for producing gaas layers of nonuniform thickness.
This patent grant is currently assigned to Bell Telephone Laboratories, Incorporated. Invention is credited to Ralph Andre Logan, Barry Irwin Miller.
United States Patent |
3,859,178 |
Logan , et al. |
January 7, 1975 |
MULTIPLE ANODIZATION SCHEME FOR PRODUCING GaAs LAYERS OF NONUNIFORM
THICKNESS
Abstract
A multiple anodization technique is described for producing GaAs
layers of nonuniform thickness; that is, GaAs layers having
substantially rectangular steps or grooves of the type capable of
guiding light. The technique includes the following steps: (1)
growing a native oxide layer on a major surface of the GaAs layer
by submersing the GaAs layer in an anodization bath of concentrated
H.sub.2 O.sub.2 having a pH less than 6; (2) removing selected
portions of the oxide layer so as to expose the GaAs layer adjacent
to the desired step region; and (3) immersing the surface again in
an anodization bath of concentrated H.sub.2 O.sub.2 having a pH
less than 6. Also described are techniques for growing by liquid
phase epitaxy an AlGaAs layer over the resultant GaAs step
structure in a manner which alleviates two problems: the formation
of deleterious oxides on the GaAs layer and the dissolving of the
step configuration while in contact with the AlGaAs growth
solution.
Inventors: |
Logan; Ralph Andre (Morristown,
NJ), Miller; Barry Irwin (Middletown, NJ) |
Assignee: |
Bell Telephone Laboratories,
Incorporated (Murray Hill, NJ)
|
Family
ID: |
23723612 |
Appl.
No.: |
05/434,286 |
Filed: |
January 17, 1974 |
Current U.S.
Class: |
438/498;
148/DIG.51; 148/DIG.72; 148/DIG.107; 148/DIG.145; 205/122; 205/199;
148/DIG.56; 148/DIG.106; 148/DIG.117; 148/DIG.118; 205/118;
205/159; 205/220; 205/223; 438/41; 117/61 |
Current CPC
Class: |
C25D
11/32 (20130101); H01S 5/227 (20130101); Y10S
148/117 (20130101); H01S 5/2275 (20130101); Y10S
148/107 (20130101); Y10S 148/051 (20130101); Y10S
148/072 (20130101); Y10S 148/118 (20130101); Y10S
148/106 (20130101); Y10S 148/056 (20130101); Y10S
148/145 (20130101) |
Current International
Class: |
C25D
11/02 (20060101); C25D 11/32 (20060101); H01S
5/00 (20060101); H01S 5/227 (20060101); C23b
005/48 (); C23b 005/46 (); C23b 009/00 () |
Field of
Search: |
;204/15,42,56R,57,14N |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
Oxidation of GaP in an Aqueous H O Solution, B. Schwartz et al., J.
of Electrochemical Soc., Vol. 120, No. 4, pg. 576, April 1973.
.
The Anodic Oxidation of GaAs in Aqueous H O Solution, B. Schwartz
et al., J. of Electrochemical Soc., Vol. 120, No. 3, pg. 89c, March
1973..
|
Primary Examiner: Tufariello; T. M.
Attorney, Agent or Firm: Urbano; M. J.
Claims
What is claimed is:
1. A method of fabricating a substantially rectangular step in a
preselected region of a GaAs layer comprising the steps of:
a. growing a native oxide layer on a major surface of said GaAs
layer by submersing said GaAs layer in an anodization bath
comprising H.sub.2 O.sub.2 having a pH less than about 6;
b. removing selected portions of said oxide layer so as to expose
said GaAs layer adjacent said preselected region, a native oxide
mask remaining over said region; and
c. immersing said GaAs layer in an anodization bath comprising
H.sub.2 O.sub.2 having a pH less than about 6 so that the exposed
portions of said GaAs layer are consumed in the formation of a
native oxide layer thereon, thereby to form said step in said GaAs
layer.
2. The method of claim 1 wherein a first anodization voltage is
applied in step (c) which is less than or equal to a second
anodization voltage applied in step (a), so that the height of said
step is proportional to said second anodization voltage.
3. The method of claim 1 wherein a second anodization voltage is
applied in step (c) which is greater than a first anodization
voltage applied in step (a), so that during step (c) GaAs is
consumed not only in the exposed portions of said GaAs layer but
also beneath said oxide mask, the height of said step being
proportional to said first anodization voltage.
4. The method of claim 1 wherein the anodization baths of steps (a)
and (c) each have a pH of about 2.
5. The method of claim 4 wherein said GaAs layer is grown by liquid
phase epitaxy and wherein during said anodization steps (a) and (c)
about 11 Angstroms of native oxide is grown and about 7 Angstroms
of GaAs is consumed per volt.
6. The method of claim 4 wherein said GaAs layer is ingot grown and
wherein during said anodization steps (a) and (c) about 18
Angstroms of native oxide is grown and about 12 Angstroms of said
GaAs is consumed per volt.
7. The method of claim 1 where step (b) includes the additional
steps of: applying a layer of photoresist over said oxide layer,
irradiating with ultraviolet radiation the portions of said
photoresist layer adjacent the desired oxide mask; submersing said
photoresist layer in a caustic developer solution so as to dissolve
the irradiated portions thereof and, in addition, to dissolve the
native oxide layers under said irradiated portions, the
unirradiated portion of said photoresist layer over said oxide mask
remaining thereon, heating said remaining photoresist layer at an
elevated temperature for a time period effective to harden said
photoresist layer and to render it more chemically inert, said
hardened photoresist layer and the oxide mask thereunder forming a
composite mask for subsequent processing steps, performing
anodization step (c) to grow a native oxide layer on the exposed
portions of said GaAs layer and to consume GaAs in said portions so
as to form said step, submersing said last grown native oxide layer
in a solvent which removes said oxide layer but not said composite
mask, and repeating the last mentioned two steps so as to increase
the height of said step without the need for remasking said
step.
8. The method of claim 1 wherein anodization voltages are applied
in steps (a) and (c) which are less than approximately 150 volts so
as to maintain within tolerable limits the roughness produced in
the surface of said GaAs layer during the growth of the native
oxide layers.
9. The method of claim 1 wherein all native oxide layers grown on
said GaAs layer are removed.
10. The method of claim 9 including the additional step of growing
by liquid phase epitaxy of AlGaAs on said GaAs layer.
11. The method of claim 10 including prior to the growth of said
AlGaAs layer the additional step of submersing said GaAs layer in a
solution of bromine methanol containing bromine in the approximate
range of 0.01 to 0.1 percent.
12. The method of claim 10 wherein the solution used to grow said
AlGaAs layer is allowed to equilibriate at about 800.degree.C for
several hours, bringing said solution into contact with a
sacrificial GaAs seed to allow said solution to equilibriate for a
time in the range of approximately 15 to 30 minutes, cooling said
solution at a relatively slow rate to reduce its temperature by
several degrees and then bringing said solution into contact with
said GaAs layer.
13. The method of claim 10 including the steps of growing on a GaAs
substrate a first AlGaAs layer by liquid phase epitaxy, growing
said GaAs layer on said first AlGaAs layer by liquid phase epitaxy,
controlling the amount of solution dragged over from the solution
used to grow said first AlGaAs layer to the solution used to grow
said GaAs layer so that the mole fraction of AlAs in said GaAs
layer is less than approximately 0.008.
14. The method of claim 13 performed in conjunction with apparatus
including a solution holder having at least three wells, a slider
having at least two recesses, one for carrying said substrate and
one for carrying a sacrificial GaAs seed, placing Ga solutions in
each well, a first one of which contains AlGaAs, and the second and
third of which contain GaAs, instituting a controlled cooling
program, bringing said first solution into contact with said
substrate to grow said first AlGaAs layer thereon, bringing said
substrate into contact with said second solution of GaAs in order
to dilute any solution dragged over from the well containing AlGaAs
and concurrently bringing the third solution of GaAs into contact
with said sacrificial seed so as to equilibriate said third
solution, and bringing said substrate into contact with said third
solution, thereby to grow a GaAs layer having a mole fraction of
AlAs which is less than 0.008.
15. The method of claim 14 wherein the temperature of said second
solution is decreasing at a rate of about 0.05.degree.C per minute
while it is in contact with said substrate.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
This application was concurrently filed with application Ser. No.
434,181 (S. E. Miller) entitled "Single Transverse Mode Operation
in Double Heterostructure Junction Lasers Having an Active Layer of
Nonuniform Thickness."
BACKGROUND OF THE INVENTION
This invention relates to the fabrication of dielectric optical
waveguides and, more particularly, to the fabrication of such
waveguides by a multiple or repetitive anodization procedure
applied to GaAs based semiconductor layers.
In copending application Ser. No. 308,833, filed Nov. 22, 1972 now
U.S. Pat. No. 3,813,141, S. E. Miller teaches that a properly
constructed rectangular step in an otherwise planar layer can be
made to guide light in a single transverse mode. In this regard,
solution of the boundary value problem associated with the
structure for single mode operation gives rise to a family of
curves which relate the maximum width of the rectangular step or
rib to the step height. Although S. E. Miller proposed that his
structure be fabricated of glass for use as an optical fiber (now
referred to as a single-material fiber), he also teaches in the
above-identified, concurrently filed application that a similar
structure fabricated from GaAs can be incorporated into a double
heterostructure (DH) junction laser to effect fundamental
transverse mode operation parallel to the junction plane.
Hereinafter such a DH laser will be referred to as "Miller"
laser.
In order to produce the desired step in the GaAs layers, a step
which might typically be in the range of 100 to 1000 Angstroms, one
skilled in the art would probably first consider etching the GaAs
layer. However, known etching procedures provide inadequate control
of etching depth and layer uniformity to reproducibly form such
small steps.
SUMMARY OF THE INVENTION
We have found, however, that more than adequate uniformity,
control, and reproducibility of such small steps in GaAs based
layers can be attained by a procedure which utilizes the following
steps: (1) growing a native oxide layer on a major surface of the
GaAs layer by submersing the GaAs layer in an anodization bath of
concentrated H.sub.2 O.sub.2 having a pH less than 6; (2) removing
selected portions of the oxide layer so as to expose the GaAs layer
adjacent to the desired step region; and (3) immersing the surface
again in an anodization bath comprising concentrated H.sub.2
O.sub.2 and having a pH less than 6. The anodization procedure is
of the type described by B. Schwartz in application Ser. No.
292,127 filed on Sept. 25, 1972 now U.S. Pat. No. 3,798,139 but
takes advantage of the fact that when ingot grown GaAs is subjected
to a concentrated H.sub.2 O.sub.2 anodization bath having a pH of
2.0, for example, 18.6 Angstroms of native oxide is grown and
simultaneously 12.5 Angstroms of GaAs is consumed for each volt of
applied anodization voltage. The consumed GaAs is incorporated into
the grown oxide. On the other hand, for GaAs epitaxially grown from
Ga solution (LPE), we have found that the corresponding rates are
11 Angstroms/V of oxide formed and 7.4 Angstroms/V of GaAs
consumed. Thus, a particular step height can be accurately
fabricated by choosing an appropriate anodization voltage. For
example, if step (1) utilizes an anodization voltage of 100 V.,
about 1,860 Angstroms of oxide is grown and about 1,250 Angstroms
of GaAs is consumed, the latter being incorporated into the grown
oxide. After suitable masking, as defined by step (2), a 100
Angstrom step can be fabricated in step (3) by anodization about 8
V. for ingot grown GaAs and at about 13.5 V. for LPE grown
GaAs.
In the foregoing procedure, the step height was determined by the
second anodization voltage applied in step (3) because it was lower
than the first anodization voltage applied in step (1). However, if
the converse were true, then the step height would be determined by
the first anodization voltage.
The structure resulting after step (3) is a passive dielectric
optical waveguide capable of guiding light in the step region, and,
in addition, capable of restricting oscillation to a single
transverse mode for appropriate step widths and heights. This
structure has been referred to as a rib-waveguide which may be used
as a passive device or which may be incorporated into an active
device such as a Miller laser. In order to complete the fabrication
of such a laser, a layer of AlGaAs would be grown by LPE, for
example, over the stepped GaAs layer, it being assumed that a first
AlGaAs layer underlies the stepped GaAs layer. That is, the stepped
GaAs is sandwiched between AlGaAs layers of opposite conductivity
type whereas the stepped GaAs layer may be either n-type, p-type,
unintentionally doped or compensated. Care should be exercised in
the growth of the previously mentioned GaAs layer to alleviate the
formation of deleterious oxides on the GaAs layer when exposed to
air for the anodization procedure. In addition care should be
exercised in the growth of the last AlGaAs layer to prevent the
dissolution of the step configuration while in contact with the
AlGaAs growth solution. Techniques are described hereinafter for
alleviating both of these problems.
BRIEF DESCRIPTION OF THE DRAWING
Our invention, together with its various features and advantages,
can be easily understood from the following more detailed
description taken in conjunction with the accompanying drawing, in
which:
FIG. 1, parts A-H, show schematically the fabrication of a Miller
laser at various stages of the fabrication process in accordance
with an illustrative embodiment of our invention; and
FIG. 2 is a schematic of apparatus for growing the layers of FIG. 1
by liquid phase epitaxy in accordance with another aspect of our
invention.
DETAILED DESCRIPTION
Turning now to FIG. 1, parts A-H show sequential structural changes
after each principal step in our inventive technique used to
fabricate a Miller laser or a rib-waveguide. Of course, for
simplicity and clarity of explanation FIG. 1 is not necessarily
drawn to scale.
In FIG. 1, part A, an n-AlGaAs layer 12 has been epitaxially grown
on an n-GaAs substrate 10. Illustratively, layer 12, as well as
other GaAs or AlGaAs layers described hereinafter, is grown by a
liquid phase epitaxy (LPE) technique of the type described by H. C.
Casey, Jr., et at., in Journal of Applied Physics, Vol. 45, page
322 (January, 1974). Thus, the next step in the procedure, as shown
in FIG. 1, part B, is to grow by LPE a p-GaAs layer 14 on layer 12.
Next, as shown in FIG. l, part C, a native oxide layer 16 is formed
on the GaAs layer 14.
We have found that oxide layer 16 is preferably formed by an
anodization scheme of the type described by B. Schwartz in U.S.
Pat. No. 3,798,139 supra. Briefly, in this technique the structure
of FIG. 1, part B is placed in an electrolyte bath illustratively
comprising concentrated H.sub.2 O.sub.2 (30 percent) and H.sub.2 O
(70 percent), a commercially available solution. This structure is
made the anode whereas a noble metal such as platinum is made the
cathode. The electrolyte bath is typically buffered with phosphoric
acid to decrease the pH to a value of 2.0 and a source of about 100
V. d.c. is connected between the anode and cathode. After about 10
minutes a native oxide layer is grown having a thickness of about
1,100 Angstroms. Simultaneously, about 740 Angstroms of GaAs layer
14 is consumed and is incorporated into the grown oxide layer 16.
Alternatively, the anodization could be performed using a constant
current source instead of the constant voltage source, in which
case the current is caused to flow through the oxide and sample
(typically at about 10ma/cm.sup.2 ) until the desired voltage drop
across the oxide is obtained, in this case 100 V. Note that the
amount of oxide grown and GaAs consumed per volt may be a function
of the GaAs growth procedure and/or the surface preparation.
However, these parameters can be readily measured in advance for
the particular GaAs material being anodized. For example, we have
found that for ingot grown GaAs, the foregoing bath at 100 V. d.c.
produces an oxide layer having a thickness of about 1,860 Angstroms
and consumes about 1,250 Angstroms of GaAs.
In general, a suitable pH range is about 1-6. The relationship
between oxide thickness and anodization voltage varies with the pH
of the H.sub.2 O.sub.2 bath. While buffering with phosphoric acid
decreases the pH, buffering with aqueous ammonium hydroxide
increases the pH. A suitable voltage range is about 5 to 225 V. As
described hereinafter, however, the maximum voltage utilized in the
growth of subsequent native oxide layers may be limited to about
150 V. by considerations related to surface roughness.
Next, the structure of FIG. 1, part C, is removed from the bath and
air dried by heating, for example, at 110.degree.C for 1/2
hour.
After drying is completed, portions of the native oxide layer 16
are removed by standard photolithographic techniques in order to
define an elongated oxide stripe 18 as shown in FIG. 1, part D.
Briefly, a photoresist layer (not shown) of any suitable
photoresist (e.g., AZ1350) is deposited on oxide layer 16 and,
after masking to shade the desired stripe, is exposed to
ultraviolet radiation. The exposed photoresist, and the oxide
directly beneath, is then removed in a caustic developer leaving a
photoresist layer 15 (shown in FIG. 1, part D in phantom) on oxide
stripe 18. The remaining photoresist layer 15 may be removed by
submersing in acetone thereby leaving only oxide stripe 18 on GaAs
layer 14. As described hereinafter, this stripe will be utilized as
a mask against subsequent oxidation in order to form a rectangular
step in the GaAs layer 14.
In order now to fabricate a rib-waveguide or a Miller laser, it is
necessary to remove a preselected amount of GaAs, typically 100 to
1,000 Angstroms, from the exposed portions 14a and 14b of layer 14.
Adequate uniformity and control of this process is achieved by
repeating the above-described anodization procedure in which
utilization is made of the fact that LPE grown GaAs about 7.4
Angstroms of GaAs is consumed per volt in a bath having a pH = 2.0.
Thus, as shown in FIG. 1, part E, to form a step having a height
.DELTA.h = 100 Angstroms, the structure of FIG. 1, part D is
anodized at about 13.5 V. Similarly, to form a step having a height
.DELTA.h = 500 Angstroms, the structure is anodized at about 67.5
V. Because the second anodization voltage (i.e., that used to form
the step 20 of FIG. 1, part E) is less than the first anodization
voltage (i.e., that used to form the oxide stripe 18) the second
anodization does not grow more oxide on the previously oxidized
areas lying beneath stripe 18. However, if the converse is true,
that is, if the second anodization voltage is higher than the first
anodization voltage, then the exposed portions 14a and 14b of GaAs
layer 14 (FIG. 1, part D) will be oxidized as well as the unexposed
portion 14c of layer 14 lying beneath oxide stripe 18. However, the
higher resistance associated with portion 14c (due to the
resistance of stripe 18) results in less additional GaAs being
consumed in unexposed portion 14c than in exposed portions 14a and
14b. In this case the step height .DELTA.h is determined by the
first anodization voltage rather than the second anodization
voltage.
In either case, the next step in the procedure is to remove all of
the grown native oxide by immersing the structure of FIG. 1, part E
in a suitable acid or base, for example HCl or NH.sub.4 OH. The
resultant structure, shown in FIG. 1, part F, exhibits a GaAs layer
14 having a centrally located rectangular step 20. As mentioned
previously, for use as a rib-waveguide or as a Miller laser, the
step height .DELTA.h is typically in the range of 100-1,000
Angstroms for fundamental mode operation. Consequently, the
above-described anodization bath would require anodization voltages
in the range of about 13.5 V. to 135 V. For other applications,
however, larger step heights might be desirable so that, without
more, larger anodization voltages would be required. However, we
have found that anodization voltages larger than about 150 V.
produce a relatively rough surface on the top of the GaAs layer 14.
Such roughness has made it difficult to reproducibly grow by LPE
good quality AlGaAs on the top of layer 14. (Such layers are
utilized to form the Miller laser as will be described hereinafter
with reference to FIG. 1, parts G and H.) In addition, even if
surface roughness were not a problem in a particular device
application, the maximum anode-to-cathode voltage which can be used
in the anodization apparatus is about 225 V. Thus, in a single
anodization step at 225 V. the maximum step height .DELTA.h that
can be produced on LPE grown GaAs is about 1,660 Angstroms.
To produce larger steps either of two procedures can be followed.
First, it is possible to repeat the procedure beginning with the
growth of another native oxide layer over the entire surface of the
structure of FIG. 1, part F and subsequently performing the steps
associated with FIG. 1, parts D and E. However, this procedure
would require critical realignment of the photolithographic mask
with the rectangular step 20. Alternatively, we have found that
larger step heights can be readily attained by a preferred
technique in accordance with another embodiment of our invention.
That is, the photoresist layer 15 of FIG. 1, part D can be
specially treated and left on the structure during the second
anodization. The native oxide formed on portions 14a and 14b by the
second anodization step is dissolved in the caustic developer
solution whereas the treated photoresist layer 15 is unaffected.
This technique defines a composite mask as shown in FIG. 1, part D,
which comprises the native oxide stripe 18 and the overlying
treated photoresist layer 15. Consequently, the structure of FIG.
1, part D can be subjected to a plurality of sequential anodization
and oxide-stripping steps while maintaining the integrity of the
composite mask. In each step the native oxide is grown on the
exposed portions of layer 14 and is then stripped away. This
procedure is repeated a requisite number of times to achieve the
desired step height.
More specifically, an illustrative set of steps in this procedure
entails the structure of FIG. 1, part B, as previously described,
to form native oxide layer 16. This structure is then air dried at
about 110.degree.C for 30 minutes. Photoresist AZ1350 is then
applied and a stripe pattern is formed on the surface of the oxide
in conventional fashion. Note that the conventional caustic
developer solution dissolves the exposed photoresist and the
exposed native oxide thereunder. The unexposed photoresist, layer
15, is essentially insoluble in the developer. Next, photoresist
layer 15 is hardened by air drying at 110.degree.C for about 30
minutes. This step forms the composite mask comprising native oxide
stripe 18 and the hardened photoresist layer 15. Next, the sample
may be reanodized to oxidize the exposed portions 14a and 14b of
the GaAs layer 14b. The structure is then submersed in the
developer solution or other suitable solvent to remove the grown
oxide. The last two steps can now be repeated to remove as much
GaAs as desired from the exposed portions 14a and 14b . When the
desired step height is finally attained, the hardened photoresist
layer 15 may be removed by submersing in acetone and the native
oxide mask 18 may be removed as previously described.
Note that we have found that use of the photoresist directly on the
GaAs layer 14 without the underlying native oxide strip 18 was
unsuccessful because of undercutting of the photoresist in the
anodization bath.
Returning now to FIG. 1, part F, there will now be described a
procedure for growing an AlGaAs layer 22 over the stepped GaAs
layer 14 in order to complete a Miller laser. In order to achieve
good quality growth of AlGaAs layer 22, we have found that there
should be as little oxide as possible on the surface of stepped
GaAs layer 14. We have identified two sources of such oxide which
can be independently removed as follows. First, in stripping the
native oxide from the stepped GaAs layer 14 the structure is
typically submersed in concentrated HCl or HF acid and subsequently
rinsed in water. The water rinse causes an oxide to grow on the
GaAs surface. However, if the water rinse is followed by a step in
which the surface is exposed to a bromine methanol solution for
about 1-3 minutes, the oxide is removed without any deleterious
effects to the rib structure and the subsequent growth of a good
quality AlGaAs layer 22 can be effected. A suitable range of
bromine content in the solution is approximately 0.01 to 0.1
percent by volume. The bromine methanol etching is terminated by
rinsing the sample in methanol, and the sample is then inserted
into the epitaxial layer growth apparatus. Secondly, during the
growth of GaAs layer 14 some of the solution used to first grow
AlGaAs layer 12 may be dragged over into the solution used to grow
GaAs layer 14. The mixing of the two causes layer 14 to contain a
small amount of Al. That is, layer 14 instead of being pure GaAs
may be Al.sub.y Ga.sub.1.sub.-y As with y between 0.01 and 0.02
approximately. Consequently, if layer 14 is exposed to air aluminum
oxide will form thereon. Even though this oxide may be removed by
the aforementioned bromine methanol etching, if the surface is
again exposed to air the oxide will reform. We have found, however,
that it is possible to obtain good quality AlGaAs layers 22 if the
amount of solution drag-over is minimized to the extent that y is
less than about 0.008. One approach to this problem is to perform
the final bromine methanol etching prior to growth of AlGaAs layer
22 in a well-known oxygen-free glove-box. However, this procedure
entails handling of the LPE apparatus (i.d., the solution holder
and seed slider) in an oxygen-free atmosphere. Alternatively, we
have found that use of the LPE apparatus shown in FIG. 2 enabled us
to grow the GaAs layer 14 so that it was substantially free of Al.
Consequently, either no oxidation of Al formed on the surface of
layer 14 or the amount formed, if any, was insignificant. This
procedure is as follows. The wells I, II and III of solution holder
29 are filled, respectively, with Ga solutions of AlGaAs with Sn or
an n-dopant, GaAs with Ge or a p-dopant and GaAs with Ge or a
p-dopant. After the n-AlGaAs layer 12 is grown on the main seed 34
of FIG. 2 (which corresponds to substrate 10 of FIG. 1, part A),
the slider 31 of FIG. 2 is moved so that the main seed 34 is under
well II which contains a p-GaAs solution. The growth rate is
adjusted to about 0.05 .mu.m per minute so that while the main seed
34 is under well II, only about 0.3 .mu.m of GaAs is grown thereon.
This step allows any solution dragged over from well I to be
diluted. Thus, any subsequent drag-over will be diluted even more.
Meanwhile the sacrificial seed 32 equilibriates the p-GaAs solution
of well III. Finally, 0.4 .mu.m GaAs (i.e., layer 14 of FIG. 1,
part B) is grown on the already existing 0.3 .mu.m GaAs layer. The
0.4 .mu.m GaAs layer will be almost free of AlAs, typically y
.about. 0.003-0.005.
In addition to the oxide problem, it is important to initiate the
growth of AlGaAs layer 22 so that the integrity of the step 20 in
GaAs layer 14 is maintained. If the solution used to grow the layer
22 dissolves a portion of the layer 14, the step which is typically
only 1,000 Angstroms or less in height may be obliterated. This
problem may be alleviated as follows. The wells are emptied and
wells I and II are refilled with Ga solutions containing,
respectively, AlGaAs with Ge or a p-dopant and GaAs with Ge or a
p-dopant. The AlGaAs solution I is allowed to equilibriate for
about 2 hours at 800.degree.C. Then a fresh sacrificial GaAs seed
32 is slid under it and allowed to equilibriate for about 15-30
minutes. This step insures that the solution I is at equilibrium at
the bottom where growth occurs. Then the solution and seeds (i.e.,
the oven, not shown) are cooled at a rate of about 0.25.degree.C
per minute until the temperature decreases by about 3-4.degree.C
before the main seed 34 is slid under the solution I. This
temperature drop insures that growth has already started on the
sacrificial seed 32 and will continue smoothly on to the main seed.
We have found that this procedure provides sudden growth of the
p-AlGaAs layer 22 without rounding of the edges of the step 20 of
GaAs layer 14.
After the p-AlGaAs layer 22 is grown by the aforementioned
technique, a similar technique is used to grow the p-GaAs layer 24.
The latter layer is utilized to facilitate forming electrical
contacts to the Miller laser. By techniques well known in the art
contact 26 is formed on the substrate 10 and a stripe geometry
contact 28 is formed on the GaAs layer 24. Stripe contact 28 is
substantially in registration with the rectangular step 20 in layer
14.
It is to be understood that the above-described arrangements are
merely illustrative of the many possible specific embodiments which
can be devised to represent application of the principles of the
invention. Numerous and varied other arrangements can be devised in
accordance with these principles by those skilled in the art
without departing from the spirit and scope of the invention. In
particular, although the foregoing technique was specifically
directed to the fabrication of a rectangular step in a GaAs layer,
it would be obvious to one skilled in the art that a substantially
rectangular groove in a GaAs layer can readily be formed in
substantially the same way. For example, in the photolithographic
masking step, a photoresist mask, which is the negative of that
utilized to form the step, could be utilized to form a groove.
Alternatively, a photoresist mask defining a pair of parallel
stripes could be utilized and a groove formed therebetween by
anodization and oxide stripping. It should be noted, however, that
the active region of the laser formed by a step functions in a way
different from the active region of a laser formed by a groove.
Moreover, whereas the foregoing fabrication procedures employed a
stripe mask, it would be obvious to one skilled in the art that the
mask could have any planar shape (in top view), but the
cross-section at any particular point will still be a substantially
rectangular step.
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