U.S. patent number 3,767,551 [Application Number 05/194,603] was granted by the patent office on 1973-10-23 for radio frequency sputter apparatus and method.
This patent grant is currently assigned to Varian Associates. Invention is credited to Lawrence F. Herte, Albert Lang, Jr..
United States Patent |
3,767,551 |
Lang, Jr. , et al. |
October 23, 1973 |
RADIO FREQUENCY SPUTTER APPARATUS AND METHOD
Abstract
A radio frequency sputter apparatus is disclosed. The apparatus
includes first and second spaced electrode structures with a
grounded shield structure disposed around the outside of one of the
electrode structures to define a sputter cathode or target
electrode. Radio frequency energy is applied to the space between
the electrode structures to produce a radio frequency plasma
discharge in the region between the electrode structures. A radio
frequency inductor is placed in a direct current circuit connection
between the non-target electrode (substrate table) and ground
potential. The target electrode is permitted to self bias to a
negative d.c. potential. Heating of the non-target electrode and
objects being plated supported therefrom is substantially reduced
due to the provision of the inductor. A switch is provided for
selectively connecting the non-target electrode directly to ground
with or without the inductor in the connection to ground.
Inventors: |
Lang, Jr.; Albert (Palo Alto,
CA), Herte; Lawrence F. (Palo Alto, CA) |
Assignee: |
Varian Associates (Palo Alto,
CA)
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Family
ID: |
22718216 |
Appl.
No.: |
05/194,603 |
Filed: |
November 1, 1971 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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832246 |
Jun 11, 1969 |
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Current U.S.
Class: |
204/192.12;
204/298.08 |
Current CPC
Class: |
C23C
14/35 (20130101) |
Current International
Class: |
C23C
14/35 (20060101); C23c 015/00 () |
Field of
Search: |
;204/192,298 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
Sputtering System Data Sheet Vac. 2311., Varian Associates, April,
1967..
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Primary Examiner: Mack; John H.
Assistant Examiner: Kanter; Sidney S.
Parent Case Text
This application is a continuation of Ser. No. 832,246 filed June
11, 1969 and now abandoned.
Claims
We claim:
1. In a radio frequency sputter apparatus, means forming a target
electrode structure, means forming a second electrode structure
spaced from said target electrode, said second electrode structure
being adapted to support a substrate to be sputter coated, a source
of radio frequency energy connected between said target electrode
and ground to produce a radio frequency plasma discharge in the
region between said target and second electrode structures, said
target electrode structure being substantially isolated from ground
potential for direct current potentials such that said target
electrode structure is self-biased in the presence of the plasma
discharge to a negative direct current potential relative to ground
potential, THE IMPROVEMENT COMPRISING means forming a direct
current circuit connection between said second electrode structure
and ground potential, a radio frequency choke connected in series
with said direct current circuit connection, and switch means
selectively operable to bypass said radio frequency choke in said
direct current connection to ground potential.
2. The apparatus of claim 1 further comprising a radio frequency
coil disposed around the space between said target and second
electrodes and connected to a radio frequency source.
3. The apparatus of claim 1 further comprising a grounded shield
structure disposed around the outside of said target electrode
structure.
4. The method of operating sputter apparatus which comprises a
target electrode structure, a substrate holder for supporting at
least one substrate to be coated with material sputtered from said
target electrode structure, a source of radio frequency energy
connected between said target electrode structure and ground to
produce a radio frequency plasma discharge in the region between
said target electrode structure and said substrate holder, said
target electrode structure being substantially isolated from ground
potential for direct current potentials such that said target
electrode structure is self biased in the presence of the plasma
discharge to a negative direct current potential, first mode
circuit means forming a direct current and radio frequency current
conducting circuit connection between said substrate holder and
ground potential, and second mode circuit means forming a direct
current circuit connection including a radio frequency choke in
series therewith connecting said substrate holder to ground
potential, SAID METHOD comprising the steps of operating part time
in one of said modes and part time in the other of said modes
during coating of the same substrate.
5. The method of claim 4 in which said apparatus is operated first
in said first mode and then in said second mode during coating of
the same susbtrate.
6. In a radio frequency sputter apparatus, means forming a target
electrode structure, means forming a second electrode structure
spaced from said target electrode, said second electrode structure
being adapted to support a substrate to be sputter coated, a source
of radio frequency energy connected between said target electrode
structure and ground to produce a radio frequency plasma discharge
in the region between said target and second electrode structures,
said target electrode structure being substantially isolated from
ground potential for direct current potentials such that said
target electrode structure is self-biased in the presence of the
plasma discharge to a negative direct current potential relative to
ground potential, THE IMPROVEMENT COMPRISING an electrical circuit
connected between said second electrode structure and ground, said
circuit forming an open circuit to ground for direct current, a
radio frequency choke connected in series in said direct current
grounding circuit; and except for stray reactance, said second
electrode structure being isolated from ground other than through
said circuit.
Description
DESCRIPTION OF THE PRIOR ART
Heretofore, radio frequency sputter apparatuses have been built
wherein one of the electrode structures was permitted to float at a
self biased negative d.c. potential relative to the opposed
substrate electrode which was grounded. Objects to be sputter
plated were disposed on the grounded substrate electrode And
positive ions generated within the plasma discharge bombarded
target material disposed adjacent the self biased electrode to
produce sputtering of target material onto the objects disposed on
the substrate table electrode. Such an apparatus, when it was
operated at substantial power levels, as of 2.5 kilowatts of energy
being dissipated in the r.f. discharge, caused substantial heating
of the objects on the substrate table. More particularly it was
found that when plating certain substrate members, such as silicon,
with certain material, such as gold or copper, that excessive
heating Of the objects to be plated was obtained, such heating
exceeding 356.degree. C which, when depositing gold, resulted in
producing an alloy of the gold with the substrate material. Such
prior art sputter apparatuses are described and claimed in
copending U.S. applications Ser. No. 662,637 filed Aug. 23, 1967;
Ser. No. 625,733 filed Mar. 24, 1967, and Ser. No. 674,539 filed
Oct. 11, 1967 all assigned to the same assignee as the present
invention.
While such prior art apparatuses are particularly useful for
sputter plating many devices where substantial temperatures of the
surface being plated can be tolerated, there exists a need for r.f.
sputter apparatus wherein the temperature of the substrate can be
maintained below certain temperatures at which alloying occurs
between the sputter layer and the surface material being plated.
The removal of heat from the substrates is difficult and has not
been successful at practical substantial power levels.
SUMMARY OF THE PRESENT INVENTION
The principal object of the present invention is the provision of
an improved radio frequency sputter apparatus.
One feature of the present invention is the provision of a radio
frequency inductor connected between the substrate table electrode
and ground while permitting the opposed target electrode structure
to assume a self bias d.c. potential, whereby the inductor serves
to reduce the heating of the objects being plated as carried upon
the substrate electrode structure.
Other features and advantages of the present invention will become
apparent upon a perusal of the following specification taken in
connection with the accompanying drawings wherein:
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic line diagram of a radio frequency sputter
apparatus incorporating features of the present invention,
FIG. 1A is an alternative circuit for that portion of FIG. 1
delineated by line 1A--1A, and
FIG. 2 is a schematic circuit diagram of another sputter apparatus
incorporating features of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Referring now to FIG. 1, there is shown, in schematic line diagram
form, a radio frequency, r.f., sputter apparatus 1 incorporating
features of the present invention. Briefly, the r.f. sputter
apparatus 1 includes a bell jar 2 forming an evacuable chamber in
gas communication with a vacuum system 3 utilized for evacuating
the bell jar to a suitable operating pressure such as 2 .times.
10.sup.-.sup.5 Torr. A suitable ionizable gas, such as argon, is
utilized as the fill, at a pressure of 5 .times. 10.sup.-.sup.3
Torr, for the bell jar 2 such that an intense plasma discharge may
be obtained therein. A pair of r.f. electrodes 4 and 5,
respectively, are supported within the bell jar 2 and are
preferably flat plate structures, as of copper. A grounded shield
electrode structure 6 is disposed around the outside of one of the
electrodes 4. A grounded radio frequency screen shield 7 is
disposed outside the surface of the bell jar 2 to prevent escape of
radio frequency energy from the bell jar 2.
A radio frequency generator 8 at a suitable radio frequency, as of
13.56 megahertz and having a relatively high power output as of 2.5
kilowatts, is coupled to electrode 4 via an impedance matching
transformer 9 and a variable coupling capacitor 11, as of 10 to 300
picofarads. A second variable capacitor 12, as of 10 to 300
picofarads, is connected between the electrode 4 and ground for
impedance matching the radio frequency generator 8 to the impedance
of the radio frequency discharge produced in the region between
electrodes 4 and 5. Capacitors 11 and 12 are adjustable for
impedance matching and they serve to isolate electrode 4 from
ground potential for d.c. potentials, such that electrode 4, in
operation, may assume a d.c. potential independent of ground
potential.
Electrode 5 forms a substrate table onto which objects 13 which are
to be plated are disposed. Objects 13 to be plated may be
conductive or nonconductive. A target material 14 is placed
adjacent target electrode 4 to be bombarded by ions generated
within the plasma discharge region between electrodes 4 and 5 to
produce sputtering of the target material 14 onto the objects 13 to
be plated or coated. The target material 14 may be conductive or
nonconductive. Typical target materials include gold, copper,
stainless steel, alumina, glass, and many other materials.
The apparatus 1 of FIG. 1 may be operated in two modes depending
upon the circuit connections made to the electrodes 4 and 5. More
specifically, a pair of at least two position switches 15 and 16,
respectively, are ganged together by means of a mechanical
interconnection 17. In a first position of the switches 15 and 16,
indicated by I, the upper or target electrode 4 is connected via
switch 15 to a floating open circuit terminal 18, whereas the
sbustrate table electrode 5 is connected to ground. This is the
conventional prior art r.f. sputter plating connection. In
operation, the radio frequency energy applied across the r.f.
electrodes 4 and 5 produces a radio frequency plasma discharge in
the region between electrodes 4 and 5 resulting in a plasma
discharge zone 19. In the plasma discharge zone 19, there are
approximately as many positive ions as negative electrons such that
the plasma zone is electrically neutral and it assumes a relatively
low potential with respect to ground, such as plus 100 volts,
depending upon the gas utilized in the discharge and the pressure
of the discharge. The plasma discharge zone 19 does not extend to
the surfaces of the electrodes 4 and 5. More specifically, it is
found that a dark space sheath is formed immediately adjacent the
interior surfaces of the electrodes 4 and 5 with the thickness of
the dark sheath being substantially greater adjacent the target
electrode 4.
In the presence of the r.f. plasma discharge, the target electrode
structure 4, which also includes the target material 14 when it is
conductive, assumes a negative d.c. potential which is
approximately equal to the magnitude of the average of the
peak-to-peak amplitude of the r.f. potential applied across
electrodes 4 and 5. This relatively large d.c. self biased
potential which develops on electrode 4 has been attributed to the
high mobility of the electrons relative to that of the ions. Thus,
during one cycle of operation, more electrons are attracted to the
electrode 4 during the positive half cycle than there are ions
attracted during the negative half cycle, such that the negative
charge builds up on the electrode, including the target electrode
if it is conductive. The result is that electrode 4 and the target
14, when it is conductive, acquires a large negative d.c. potential
with respect to the plasma, such potential typically falling within
the range of -1 KV to -3 KV and being a function of the gas
utilized to form the plasma discharge and the pressure of the
discharge.
Positive ions within the discharge zone 19 are accelerated across
the dark sheath and bombard the target 14 with an energy
corresponding to the d.c. bias, namely, typically about 2.3 KV.
This results in sputtering of the target material. The sputtered
material passes through the discharge zone 19 and impinges upon the
devices 13 to be plated, as disposed upon the opposed substrate
table electrode 5.
When the positive ions bombard the target material 14, in addition
to dislodging target material, they also knock out secondary
electrons in accordance with the secondary emission ratio of the
target material. These secondary electrons "see" the r.f. voltage
as superimposed on the self bias potential and under certain phase
angles of the r.f. voltage they "see" very substantial accelerating
voltages which propel the secondary electrons through the neutral
plasma discharge 19 to the substrate table electrode 5. Since the
discharge zone is operating at a relatively low pressure, for
example, 1 .times. 10.sup.-.sup.3 Torr to 3 .times. 10.sup.-.sup.3
Torr the mean free path for the electrons is on the same order of
magnitude as the typical dimensions of the evacuated system and,
therefore, a large fraction of the propelled secondary electrons
will pass through the discharge and strike the plating which is
being deposited upon the objects 13, thus, producing unwanted
heating of the plating by the secondary electron bombardment.
In addition, positive ions are present in the plasma zone 19. Since
the plasma zone is operating at a potential slightly positive with
respect to ground potential, i.e., 100 volts, a certain small
fraction of the positive ions within the discharge will be drawn
out of the discharge and propelled against the grounded substrate
electrode 5 and objects 13 thereon.
Thus, both positive ion and electron bombardment of the objects 13
being plated is obtained for the r.f. sputter plating mode I. It is
found that some bombardment of the surface being plated is desired
during the initial phases of the plating process. It is believed
that this bombardment of the surface serves to increase the
adhesion between the plating and the surface being plated by
removing surface contaminants or by the formation of surface
defects serving as nucleation sites for the plating. However, in
some cases, during the major portion of the plating time, and
particularly during the final portion of the plating cycle, it is
desired not to have substantial bombardment of the plating by
either the electrons or the ions as this bombardment can cause
substantial overheating of the film being plated and it can also
result in destruction of the substrate or surface on which the
plating is being deposited. The result is that low reflectivity,
film cracks and crazing of the plating are obtained and even
flaking is obtained in some cases.
In addition to the electron and ion bombardment of the objects 13
being plated, these objects are also heated by r.f. heating, by
infrared heating obtained from the glow discharge, and by
bombardment of the surface being plated with the sputter material
which impinges with approximately 300 electron volts of energy.
It has been found that the unwanted heating of the surface being
plated can be substantially reduced by switching switches 15 and 16
to the second mode of operation indicated by II. In this mode of
operation electrode 4 is connected to free floating terminal 22
such that the electrode 4 operates in substantially the same manner
as indicated above with regard to mode I and has a relatively high
negative d.c. self bias potential. However, the substrate table
electrode 5 is connected to terminal 23 which serves to connect the
substrate table 5 through switch 16 and an inductor 24 to ground.
The radio frequency inductor 24, as of 84 microhenries, serves as a
radio frequency choke. Thus, in mode II the substrate electrode 5
is connected for d.c. to ground through the radio frequency
inductor 24. It is found that the inductor 24 serves to
substantially reduce the temperature of the surface of the objects
13 being plated. Measurements of the power density impinging on the
objects to be plated when 1 kw r.f. power is applied across the
electrodes in mode I is 0.33 watts per square centimeter and in
mode II is 0.16 watts per square centimeter. A consistent 20
percent reduction in temperature of the substrate objects is
observed. A fully satisfactory explanation of the mechanism whereby
the inductor 24 reduces the temperature of the surface being plated
has not as yet been found. It is surmised that it reduces the
temperature of the surface being plated by reducing one or more of
the aforementioned heating factors, namely, electron bombardment,
ion bombardment, r.f. heating, infrared heating or by reducing the
energy with which the sputtered material bombards the surface being
plated.
It has been found that use of the inductor 24 permits plating of
gold onto silicon semiconductive wafers 13 with the temperature of
the surface of the wafer which is being plated remaining below
350.degree. C such that the gold is not alloyed with the silicon
semiconductor wafer material. More particularly, it was found that
alloying of gold with the silicon did not occur when approximately
400 watts of radio frequency energy was applied to the discharge
and the gold was being deposited at the rate of approximately 1,000
A per minute per kilowatt of energy applied to the discharge.
Referring now to FIG. 1A, there is shown an alternative embodiment
of the structure of FIG. 1 wherein the switches 15 and 16 are
replaced by a floating terminal 28 and a switch 31 which shunts the
inductor 24 to ground. Typical r.f. sputter plating (mode I
operation) is obtained by closing switch 31 and shunting the
substrate table 5 to ground. Low temperature r.f. sputter plating
(mode II operation) is obtained by opening switch 31 causing the
current flowing between the substrate table and ground to flow
through the inductor 24.
Use of the switches 15 and 16, as shown in the embodiment of FIG.
1, or alternatively employing the arrangement of FIG. 1A readily
permits switching the mode of operation of the sputter apparatus
from one mode to another either in preparation for or during the
plating process.
Referring now to FIG. 2 there is shown an alternative sputter
apparatus incorporating features of the present invention. The
apparatus of FIG. 2 is substantially the same as that shown in FIG.
1. The only exception is that the r.f. energy from generator 8 is
also applied to a radio frequency coil 35 disposed in the space
between the electrodes 4 and 5, respectively. The apparatus of FIG.
2 is operable in the aforedescribed modes I or II, by setting of
switches 15 and 16 to the positions I or II, as aforedescribed with
regard to the embodiment of FIG. 1, or by employing the circuit of
FIG. 1A, as aforedescribed. An apparatus incorporating an RF coil
encircling the space between the target and the substrate holder is
disclosed in Varian Data Sheet VAC 2311 of April, 1967. The
RF-induced-plasma sputtering process is superior to conventional
diode-type and triode-type processes for the following reasons:
1. At operating pressures as low as 2 .times. 10.sup.-.sup.4 Torr,
two difficulties inherent in higher-pressure diode-type sputtering
are avoided: impurity inclusion and non-reproducibility of film
properties.
2. No heated filament electron source is needed to sustain the
plasma as in triode-type sputtering. Therefore, a major cause of
film contamination is eliminated and the problem of filament
burn-out is avoided.
3. No magnetic focusing coil is required to confine the ionic
plasma between the electrode plates. Thus density gradients are not
induced in the plasma and high uniformity of film deposition can be
achieved.
Since many changes could be made in the above construction and many
apparently widely different embodiments of this invention could be
made without departing from the scope thereof, it is intended that
all matter contained in the above description or shown in the
accompanying drawings shall be interpreted as illustrative and not
in a limiting sense.
* * * * *