U.S. patent number 3,760,318 [Application Number 05/283,283] was granted by the patent office on 1973-09-18 for process for making a voltage dependent resistor.
This patent grant is currently assigned to Matsushita Electric Industrial Co., Ltd.. Invention is credited to Atsushi Iga, Takeshi Masuyama, Mikio Matsuura.
United States Patent |
3,760,318 |
Masuyama , et al. |
September 18, 1973 |
PROCESS FOR MAKING A VOLTAGE DEPENDENT RESISTOR
Abstract
A voltage dependent resistor comprising a sintered body of zinc
oxide having: (1). voltage dependent properties by itself, (2). at
least one member selected from the group consisting of L: ions and
Na ions diffused in the side surface thereof, and (3). two
electrodes applies to the opposite surfaces thereof. The invention
also provides a process for making said resistor.
Inventors: |
Masuyama; Takeshi (Osaka-fu,
JA), Matsuura; Mikio (Osaka-fu, JA), Iga;
Atsushi (Osaka-fu, JA) |
Assignee: |
Matsushita Electric Industrial Co.,
Ltd. (Osaka, JA)
|
Family
ID: |
27565096 |
Appl.
No.: |
05/283,283 |
Filed: |
August 24, 1972 |
Foreign Application Priority Data
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Aug 27, 1971 [JA] |
|
|
46/66185 |
Aug 27, 1971 [JA] |
|
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46/66186 |
Aug 27, 1971 [JA] |
|
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46/66187 |
Aug 27, 1971 [JA] |
|
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46/66188 |
Sep 17, 1971 [JA] |
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46/72797 |
Sep 17, 1971 [JA] |
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46/72798 |
Sep 22, 1971 [JA] |
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46/74351 |
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Current U.S.
Class: |
338/20;
29/610.1 |
Current CPC
Class: |
H01C
7/112 (20130101); Y10T 29/49082 (20150115) |
Current International
Class: |
H01C
7/105 (20060101); H01C 7/112 (20060101); H01c
007/10 () |
Field of
Search: |
;338/20,21,13
;29/610,182,182.5 ;252/461,476,518 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Albritton; C. L.
Claims
What we claim is:
1. A process for making a voltage dependent resistor comprising
zinc oxide sintered body having voltage dependent properties by
itself, said process comprising: (1.) providing zinc oxide sintered
body having voltage dependent properties by itself, (2.) diffusing
at least one member selected from the group consisting of Li ions
and Na ions into said zinc oxide sintered body from the side
surface of said zinc oxide sintered body, and (3.) applying two
electrodes to the opposite surfaces of said zinc oxide sintered
body.
2. A process for making a voltage dependent resistor comprising
zinc oxide sintered body having voltage dependent properties by
itself, said process comprising: (1.) providing zinc oxide sintered
body having voltage dependent properties by itself, (2) diffusing
Li ions into said zinc oxide sintered body from the side surface of
said zinc oxide sintered body, and (3.) applying two electrodes to
the opposite surfaces of said zinc oxide sintered body.
3. A process according to claim 1, in which said zinc oxide
sintered body consists essentially of, as a major part, 99.9 to
80.0 mole percent of zinc oxide, and, as an additive, 0.05 to 10.0
mole percent of bismuth oxide (Bi.sub.2 O.sub.3) and 0.05 to 10.0
mole percent, in total, of at least one member selected from the
group consisting of cobalt oxide (CoO), manganese oxide (MnO),
antimony oxide (Sb.sub.2 O.sub.3), barium oxide (BaO), strontium
oxide (SrO) and lead oxide (PbO).
4. A process according to claim 1, in which said Li ions or Na ions
are diffused into said sintered body to the depth not less than
0.01 mm from the side surface of said zinc oxide sintered body.
5. A process according to claim 2, in which said Li ions are
diffused by applying a paste comprises, as a solid ingredient, 0.5
to 10.0 wt. parts of Li.sub.2 O and at least one member selected
from the group consisting of 0.01 to 10.0 wt. parts of CoO, 0.01 to
10.0 wt. parts of MnO, 0.01 to 10.0 wt. parts of Ag.sub.2 O, 0.01
to 10.0 wt. parts of Cr.sub.2 O.sub.3 and 0.01 to 10.0 wt. parts of
NiO.
6. A process according to claim 5, in which said paste comprises,
as a solid ingredient, 0.5 to 10.0 wt. percent of lithium oxide
(Li.sub.2 O), 3.0 to 35.0 wt. percent of boron trioxide (B.sub.2
O.sub.3), 5.0 to 43.0 wt. percent of silicon dioxide (SiO.sub.2)
and 12.0 to 91.5 wt. percent of one member selected from the group
consisting of bismuth oxide (Bi.sub.2 O.sub.3) and lead oxide
(PbO).
7. A process according to claim 5, in which said paste comprises,
as a solid ingredient, 0.8 to 10.0 wt. percent of lithium oxide
(Li.sub.2 O), 50.0 to 80.0 wt. percent of barium oxide (BaO) and
10.0 to 40.0 wt. percent of boron trioxide (B.sub.2 O.sub.3).
8. A process according to claim 5, in which said paste comprises,
as a solid ingredient, 1.0 to 2.5 wt. parts of Li.sub.2 O and 1.0
to 3.0 wt. parts of K.sub.2 O.
9. A voltage dependent resistor comprising zinc oxide sintered body
having: (1.) voltage dependent properties by itself, (2.) at least
one member selected from the group consisting of Li ions and Na
ions diffused in the side surface thereof, and (3.) two electrodes
applied to the opposite surfaces thereof.
10. A voltage dependent resistor comprising zinc oxide sintered
body having: (1.) voltage dependent properties by itself, (2.) Li
ions diffused in the side surface thereof, and (3.) two electrodes
applied to the opposite surfaces thereof.
11. A voltage dependent resistor accroding to claim 9, in which
said zinc oxide sintered body consists essentially of, as a major
part, 99.9 to 80.0 mole percent of zinc oxide, and, as an additive,
0.05 to 10.0 mole percnet of bismuth oxide (Bi.sub.2 O.sub.3) and
0.05 to 10.0 mole percent, in total, of at least one member
selected from the group consisting of cobalt oxide (CoO), manganese
oxide (MnO), antimony oxide (Sb.sub.2 O.sub.3), barium oxide (BaO),
strontium oxide (SrO) and lead oxide (PbO).
12. A voltage dependent resistor according to claim 9, in which the
depth of said Li ions or Na ions diffused in said zinc oxide
sintered body is not less than 0.01 mm from the side surface of
said zinc oxide sintered body.
Description
This invention relates to a preparation of a voltage dependent
resistor due to the bulk thereof and more particularly a varistor
comprising zinc oxide sintered body having Li ions or Na ions
diffused from the side surface of the sintered body.
Various voltage dependent resistor such as silicon carbide
varistors, selenium rectifiers and germanium or silicon p-n
junction diodes have been widely used for stabilization of voltage
or current of electrical circuits. The electrical characteristics
of such a voltage dependent resistor are expressed by the
relation:
I = (V/C).sup.n
Where V is the voltage across the resistor, I is the current
flowing through the resistor, C is a constant corresponding to the
voltage at a given current and exponent n is a numerical value
greater than 1. The value of n is calculated by the following
equation:
n = log.sub.10 (I.sub.2 /I.sub.1) /log.sub.10 (V.sub.2
/V.sub.1)
where V.sub.1 and V.sub.2 are voltages at a given currents I.sub.1
and I.sub.2, respectively. The desired value of C depends upon the
kind of application to which the resistor is to be put. It is
ordinarily desirable that the value of n be as large as possible
since this exponent determines the degree to which the resistors
depart from ohmic characteristics.
There have been known voltage dependent resistors comprising
sintered bodies of zinc oxide with or without additives and silver
paint electrodes applied thereto, as seen in the U.S. Pat. No.
3,496,512. The non-linearity of such voltage dependent resistors is
attributed to the interface between the sintered body of zinc oxide
with or without additives and the silver paint electrode and is
controlled mainly by changing the compositions of said sintered
body and silver paint electrode. Therefore, it is not easy to
control the C-value over a wide range after the sintered body is
prepared. Similarly, the voltage dependent resistors comprising
germanium or silicon p-n junction diodes are difficult to control
the C-value over a wide range because the non-linearity of these
voltage dependent resistors is not attributed to the bulk but to
the p-n junction. On the other hand, the silicon carbide varistors
have the non-linearity due to the contacts among individual grains
of silicon carbide bonded together by a ceramic binding material
i.e., to the bulk and are controlled in the C-value by changing a
dimension in a direction to which the current flows through the
varistors. The silicon carbide varistors, however, have a
relatively low n-value ranging from 3 to 6 and are prepared by
firing in non-oxidizing atmosphere, especially, in a purpose to
obtain a lower C-value. In U.S. Pat. applications Ser. No. 763,285
filed on Sept. 27, 1968, No. 866,820 filed on Oct. 16, 1969, No.
866,819 filed on Oct. 16, 1969, No. 866,821 filed on Oct. 16, 1969,
No. 869,470 filed on Oct. 27, 1969, No. 872,590 filed on Oct. 30,
1969, there have been disclosed voltage dependent resistors
comprising sintered bodies of zinc oxide with additives such as
bismuth oxide, uranium oxide, strontium oxide, lead oxide, barium
oxide, cobalt oxide and manganese oxide. The non-linearity of such
voltage dependent resistors is attributed to the bulk thereof and
is independent of the interface between the sintered bodies and
electrodes. Therefore, it is easy to control the C-value over a
wide range by changing the thickness of sintered body itself. Such
voltage dependent resistors in a bulk type have more excellent
properties in n-value, transient power dissipation and AC power
dissipation than SiC varistors. A disadvantage of the zinc oxide
voltage-dependent resistors exists in their poor stability in an
electric load life test in high humidity ambient. When D.C. power
is applied to the zinc oxide sintered body in a high humidity
ambient, the sintered body shows a decrease in the surface
electrical resistance. The decrease causes particularly an increase
in the leakage current in the zinc oxide voltage-dependent resistor
of a bulk type and results in the poor non-linear property. The
deterioration of the non-linear property of the voltage-dependent
resistor occurs still in the load of low power such as that lower
than 0.01 watt in high humidity ambient, for example 90 percent R.H
at 70.degree. C ambient. Therefore, it is necessary that the
sintered body are assured completely for outer moisture by
protective coating.
An object of the present invention is to provide a method for
making a voltage dependent resistor characterized by a high
stability for d.c. load in high humidity ambient.
Another object of the present invention is to provide a method for
making a voltage dependent resistor characterized by both a high
n-value and a high stability for d.c. load in high humidity
ambient.
These and other objects of the invention will become apparent upon
consideration of the following description taken together with the
accompanying drawing in which the single FIGURE is a partly
cross-sectional view of a voltage-dependent resistor in accordance
with the invention.
Before proceeding with a detailed description of the manufacturing
process of the voltage-dependent resistor contemplated by the
invention, the construction of the resultant resistor will be
described with reference to the aforesaid figure of drawing wherein
reference character 10 designates, as a whole, a voltage-dependent
resistor comprising, as its active element, a sintered body having
surfaces consisting of a side surface 2 and opposite surfaces 3 and
4 to which a pair of electrodes 5 and 6 are applied. Said sintered
body 1 is prepared in a manner hereinafter set forth and have a
diffusion layer of Li ions or Na ions 11 at said side surface 2 and
is in any form such as circular, square or rectangular plate form.
Wire leads 8 and 9 are attached conductively to the electrodes 5
and 6, respectively, by a connection means 7 such as solder or the
like.
A process for making a voltage dependent resistor characterized by
a high humidity resistance according to the invention
comprises:
1. providing zinc oxide sintered body having voltage dependent
properties by itself,
2. diffusing at least one member selected from the group consisting
of Li ions and Na ions into said zinc oxide sintered body from the
side surface of said zinc oxide and
3. applying two electrodes to the opposite surfaces of said zinc
oxide sintered body.
Said zinc oxide sintered body havng voltage dependent properties by
itself can be prepared by using a composition described in U.S.
Pat. applications Ser. No. 763,285, No. 866,820, No. 866,819, No.
866,821, No. 869,470, No. 872,590. Among various compositions, a
better result can be obtained with a composition consisting
essentially of, as a major part, 80.0 to 99.9 mole percent of zinc
oxide, and, as an additive, 0.05 to 10.0 mole percent of bismuth
oxide (Bi.sub.2 O.sub.3) and 0.05 to 10.00 mole percent, in total,
of at least one member selected from the group consisting of cobalt
oxide (CoO), manganese oxide (MnO), antimony oxide (Sb.sub.2
O.sub.3), barium oxide (BaO), strontium oxide (SrO) and lead oxide
(PbO).
The diffusion process referred to herein can be achieved by any
suitable and available method such as firing said sintered body
covered, at the side surface, with powder of lithium compound or
sodium compound which is converted into lithium oxide or sodium
oxide at the firing temperature. A prefereable method is to coat
said sintered body with a paste including the lithium compound or
the sodium compound at the side surface and to heat at a given
temperature for a given time.
An assurance of humidity stability requires a diffusion length not
less than 0.01mm in accordance with the present invention. The
diffusion length can be easily controlled by diffusion temperature
and diffusion time in a manner per se well known in the art. The
higher diffusion temperature or the longer diffusion time results
in the longer diffusion length.
Among lithium ions and sodium ions, lithium ions achieve a higher
stability for humidity at the same diffusion length.
It has been discovered according to the invention that the D.C.
stability of resultant resistor in high humidity is remarkably
improved when said paste comprises, as a solid ingredient, 0.5 to
10.0 wt. parts of Li.sub.2 O and at least one member selected from
the group consisting of 0.01 to 10.0 wt. parts of CoO. 0.01 to 10.0
wt. parts of MnO, 0.01 to 10.0 wt. parts of Ag.sub.2 O, 0.01 to
10.0 wt. parts of Cr.sub.2 O.sub.3 and 0.01 to 10.0 wt. parts of
NiO.
The D.C. stability of resultant resistor is extremely improved when
said paste comprises, as a solid ingredient, 0.5 to 10.0 wt.
percent of lithium oxide (Li.sub.2 O), 3.0 to 35.0 wt. percent of
boron trioxide (B.sub.2 O.sub.3), 5.0 to 43.0 wt. percent of
silicon dioxide (SiO.sub.2) and 12.0 to 91.5 wt. percent of one
member selected from the group consisting of bismuth oxide
(Bi.sub.2 O.sub.3) and lead oxide (PbO).
According to the invention, the resultant resistor shows excellent
D.C. stability in high humidity test when said paste comprises, as
a solid ingredient, 0.8 to 10.0 wt. percent lithium oxide (Li.sub.2
O), 50.0 to 80.0 wt. percent of barium oxide (BaO) and 10.0 to 40.0
wt. percent of boron trioxide (B.sub.2 O.sub.3).
It has been discovered according to the invention that the optimal
results can be obtained with the D.C. stability of the resultant
resistor in humidity test when said paste comprises, as a solid
ingredient, 1.0 to 2.5 wt. parts of Li.sub.2 O and 1.0 to 3.0 wt.
parts of K.sub.2 O.
The sintered body 1 can be prepared by a per se well known ceramic
technique. The starting materials comprising zinc oxide powder and
additives such as bismuth oxide, cobalt oxide, manganese oxide,
antimony oxide, barium oxide, strontium oxide, lead oxide, uranium
oxide and tin oxide are mixed in a wet mill so as to produce
homogeneous mixtures. The mixtures are dried and pressed in a mold
into desired shapes at a pressure from 100Kg/cm.sup.2 to
1,000Kg/cm.sup.2. When the rod-shaped resistor is desired, the
mixed slurry can be fabricated into the desired shape by extruding
method and then dried. The pressed or extruded bodies are sintered
in air at a temperature of 1,000.degree. to 1,450.degree. C for 1
to 5 hours, and then furnace-cooled to room temperature. The
sintering temperature is determined from the view of electrical
resistivity, nonlinearity and stability. The electrical resistivity
also can be reduced by air-quenching from the sintering temperature
to room temperature. The mixtures may be preliminarily calcined at
700.degree. to 1,000.degree. C and pulverized for easy fabrication
in the subsequent pressing step. The mixtures may be admixed with a
suitable binder such as water, polyvinyl alcohol, etc. The said
sintered body has non-ohmic resistance due to the bulk itself.
Therefore, its C-value can be changed without impairing the n-value
by changing the distance between said opposite surfaces. The
shorter distance results in the lower C-value.
The sintered body is coated, at a side surface, with a paste
including, Li oxide powder or Na oxide powder fired at a given
temperature in oxidizing atmosphere so as to diffuse Li ions or Na
ions into the bulk of said sintered body and then cooled to room
temperature. Said paste comprises, as a solid ingredient, lithium
oxide powder with or without further additives or sodium oxide
powder and, as a binding material, an organic resin such as epoxy,
vinyl and phenol resin in an organic solvent such as butyl acetate,
toluene or the like. Said lithium oxide or sodium oxide can be
replaced with any lithium compound or sodium compound such as
oxalate, carbonate, nitrate, sulfate, iodide, bromide, fluoride,
amid, hydroxyde, imide, or oxychloride which is converted into,
lithium oxide or sodium oxide which diffuses easily into said
sintered body as lithium ions or sodium ions at the firing
temperature. The binding material is burned out during firing. The
firing temperature and time depend on the weight of lithium or
sodium component included in the applied paste and should be
controlled so that the Li ions or Na ions diffuses into said
sintered body to the depth not less than 0.01 mm. Therefore, the
higher diffusion temperature requires the shorter diffusion time.
The side surface layer of sintered body having Li ions or Na ions
diffused therein shows very high electrical resistivity and assures
a high humidity stability. The firing temperature higher than
1,000.degree. C results in the rapid diffusion of Li ions and Na
ions and makes it too difficult to control the diffusion time to a
given value of the diffusion depth. On the other hand, it takes too
much time to diffuse said Li ions or Na ions into said sintered
body at a firing temperature lower than 600.degree. C for Li ions
and 650.degree. C for Na ions. Therefore, diffusion temperature is
more desirable to be 600.degree..about.1,000.degree. C for Li ions
and 650.degree..about.1,000.degree. C for Na ions.
After diffusing process, the sintered body is applied with
electrodes at the opposite surfaces of the sintered body. Said
electrodes can be made by any available method such as heating of
noble metal paint, electroless or electrolytic plating of Ag, Cu,
Ni, Sn etc., vacuum evapolating Al, Zn, Sn etc. and flame spraying
of Cu, Sn, Al, Zn etc. in accordance with the prior well known
technique. When said electrodes are formed by heating noble metal
paint at a higher temperature than said diffusion temperature, said
process of forming two electrodes is preferably carried out before
said diffusing process.
Lead wires can be attached to the electrodes in a per se
conventional manner by using conventional solder. It is convenient
to employ a conductive adhesive comprising silver powder and resin
in an organic solvent in order to connect the lead wires to the
silver electrodes. Voltage-dependent resistor according to this
invention have a high stability to temperature and humidity and in
the load life test, which is carried out at 70.degree. C, 90
percent RH at a rating power for 500 hours. The n-value and C-value
do not change remarkably after load life test.
EXAMPLE 1
Starting materials listed in Table 1 are mixed in a wet mill for 5
hours.
The mixture is dried and pressed in a mold into a disc or a
cylinder of 13 mm in diameter and the thickness listed in Table 1
at the pressure of 340 Kg/cm.sup.2. The pressed body is sintered in
air at the temperature listed in Table 1 and then furnace-cooled to
room temperature (about 15.degree. to about 30.degree. C). The
sintered body is coated, at the side surface, with the paste
containing 50 wt. percent of lithium carbonate or sodium carbonate
and 50 wt. percent of an epoxy resin butyl alcohol solution. The
amount of applied paste is controlled by an weight of lithium
carbonate or sodium carbonate converted into lithium oxide or
sodium oxide distributed through unit area of the side surface as
shown in Table 1. The applied paste is fired at a temperature of
800.degree. C for 1 hr in air. A chemical analysis of fired body
indicates that converted lithium oxide or sodium oxide diffuses
into the sintered body of zinc oxide to the depth more than 0.01
mm. Then the opposite surfaces of sintered body are provided with
electrodes of a spray-metalized film of aluminium in a per se well
known technique. Lead wires are attached to the aluminum electrodes
by means of conductive silver paint. The electrical characteristics
of the resultant resistor are shown in TAble 1. It will be readily
understood that the C value changes in proportion to the thickness
of the sintered body. The resultant resistor is tested in
accordance with a methods widely used in the electronic components
parts. The load life test is carried out at 70.degree. C ambient
temperature, 90 percent R. H atmosphere at 1 watt rating power for
500 hours. Table 1 shows the change rates of C-value and n-value of
resistors after load life test. The sintered body having no Li ions
or Na ions diffused therein shows the change rates of -20 percent
for C value at a given current of 1mA and -50 percent for n value
at the same load life test. It is readily understood that said
diffusing process have great effect for improving the D.C.
stability in high humidity. ##SPC1## ##SPC2## ##SPC3## ##SPC4##
##SPC5## ##SPC6## ##SPC7##
EXAMPLE 2
Starting materials according to Table 2 are completed to the
voltage dependent resistor and tested in the same manner as that of
Example 1 except the following processes;
Pressed size: 13mm.phi. and 10mm thickness
Sintering conditions: Table 2.
Firing temperature and Time: 800.degree. C for 1Hr.
Weight of applied Li.sub.2 O or Na.sub.2 O: 1 mg/cm.sup.2
The results of tests are shown in Table 2. ##SPC8## ##SPC9##
##SPC10## ##SPC11## ##SPC12##
EXAMPLE 3
The starting materials composing of 99.0 mole percent of zinc
oxide, 0.5 mole percent of bismuth oxide and 0.5 mole percent of
cobalt oxide are completed to the voltage dependent resistors and
tested in the same manner as that in Example 2 except the following
processes.
Sintering temperature and time: 1,350.degree. C and 1Hr. Li
compound or Na compound included in the paste: Table 3,
Weight of applied Li compound or Na compound (with weight converted
into Li.sub.2 O and Na.sub.2 O): 1mg/cm.sup.2 . Firing temperature
and time: Table 3.
The results of test are shown in Table 3. ##SPC13## ##SPC14##
##SPC15##
EXAMPLE 4
The starting materials comprising 99.0 mole percent of zinc oxide,
0.5 mole percent of bismuth oxide and 0.5 mole percent of manganese
oxide are completed to the voltage dependent resistors and tested
in the same manner as that in Example 3 except the following
processes:
Solid ingredients included in the paste: Table 4.
Weight of applied paste (with weight converted into Li.sub.2 O):
1mg/cm.sup.2
Firing temperature and time: Table 4.
The results of test are shown in Table 4. ##SPC16## ##SPC17##
##SPC18##
EXAMPLE 5
The starting materials comprising 99.0 mole percent of zinc oxide,
0.5 mole percent of bismuth oxide and 0.5 mole percent of manganese
oxide are completed to the voltage dependent resistors and tested
in the same manner as that in Example 3 except the following
processes:
Solid ingredients included in the paste: Table 5.
Weight of applied paste (with weight converted into Li.sub.2 O):
1mg/cm.sup.2.
Firing temperature and time: Table 5.
The results of test are shown in Table 5. ##SPC19## ##SPC20##
EXAMPLE 6
The starting materials comprising 99.0 mole percent of zinc oxide,
0.5 mole percent of bismuth oxide and 0.5 mole percent of manganese
oxide are completed to the voltage dependent resistors and tested
in the same manner as that in Example 3 except the following
processes:
Solid ingredients included in the paste: Table 6,
Weight of applied paste (with weight converted into Li.sub.2 O and
K.sub.2 O): Table 6.
Firing temperature and time: Table 6
The results of test are shown in Table 6. ##SPC21##
EXAMPLE 7
The starting materials comprising 99.0 mole percent of zinc oxide,
0.5 mole percent of bismuth oxide and 0.5 mole percent of manganese
oxide are completed to the voltage dependent resistors and tested
in the same manner as that in Example 3 except the following
processes:
Solid ingredients included in the paste: Table 7,
Weight of applied paste (with weight converted into Li.sub.2 O:
1mg/cm.sup.2
Firing temperature and time: Table 7.
The results of test are shown in Table 7. ##SPC22##
* * * * *