U.S. patent number 3,749,961 [Application Number 05/204,810] was granted by the patent office on 1973-07-31 for electron bombarded semiconductor device.
This patent grant is currently assigned to Watkins-Johnson Company. Invention is credited to David J. Bates, James A. Long, Lester A. Roberts, Aris Silzars.
United States Patent |
3,749,961 |
Bates , et al. |
July 31, 1973 |
ELECTRON BOMBARDED SEMICONDUCTOR DEVICE
Abstract
An electron bombarded semiconductor amplifier including an
elongated envelope having an electron gun at one end to project an
electron beam along said envelope, reverse biased semiconductor
diodes forming a target at the other end of the envelope disposed
to receive said beam and deflection means for deflecting the beam
whereby more or less of the beam strikes the diodes forming the
target.
Inventors: |
Bates; David J. (Los Altos,
CA), Roberts; Lester A. (Palo Alto, CA), Silzars;
Aris (Redwood City, CA), Long; James A. (Los Altos,
CA) |
Assignee: |
Watkins-Johnson Company (Palo
Alto, CA)
|
Family
ID: |
22759526 |
Appl.
No.: |
05/204,810 |
Filed: |
December 6, 1971 |
Current U.S.
Class: |
315/3; 313/366;
315/3.5; 315/5.24; 330/43; 257/E45.006 |
Current CPC
Class: |
H01L
45/02 (20130101); H01J 29/44 (20130101) |
Current International
Class: |
H01J
29/10 (20060101); H01L 45/02 (20060101); H01J
29/44 (20060101); H01L 45/00 (20060101); H01j
023/16 (); H01j 029/46 (); H01j 029/70 () |
Field of
Search: |
;315/1,3,5.24,5.25,3.5
;313/65AB,66,64.1 ;330/43 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Rolinec; Rudolph V.
Assistant Examiner: Chatmon, Jr.; Saxfield
Claims
We claim:
1. An electron bombarded semiconductor device comprising an
evacuated envelope, an electron gun positioned at one end of said
envelope to project an electron beam along said envelope in a
predetermined path, means comprising a delay line positioned along
said beam to interact with said beam, means for applying a signal
to one end of said delay line whereby it travels along the line to
interact with the beam to deflect the beam from the predetermined
path responsive to a signal applied to said line, a semiconductor
target comprising a pair of spaced diode devices each having first
and second regions forming a p-n junction with one region adapted
to receive said beam, with the beam impinging between said devices
when it is in said predetermined path and striking said one region
of one or the other of said devices when deflected responsive to an
input signal, means for interconnecting one region of said devices,
a load having one terminal connected to said interconnecting means,
and means for applying a voltage between the other terminal of said
load and the other region of each of said devices to reverse bias
the semiconductor diode devices.
2. A device as in claim 1 including a mask disposed in front of
said diodes whereby the beam strikes said diodes only when it is
deflected.
3. A device as in claim 1 wherein said slow wave structure
comprises a meander line spaced from a ground plane.
4. A device as in claim 3 wherein said meander line comprises a
plate having slots extending inwardly alternately from opposite
sides.
5. A device as in claim 4 including a ground plane spaced from said
plate with the spacing increasing in the direction of the
target.
6. A device as in claim 1 including a non-conductive support,
conductive pads formed on said support to receive said diode
devices and form a connection with one terminal of each device, a
conductive film spaced from said pads and forming a ground adapted
to be connected to the other terminal of said load, a coaxial
conductor having its outer conductor connected to said ground and
its inner conductor to a terminal of each of said diode devices to
form the interconnection and adapted to be connected to said one
terminal of said load and means providing electrical connection to
each of the other terminals of said diode devices for applying said
voltage.
7. A device as in claim 6 including capacitors carried by said
support and connected between the conductive film forming ground
and the means providing electrical connection to the other
terminals.
Description
BACKGROUND OF THE INVENTION
This invention relates to amplifiers and more particularly to an
electron bombarded semiconductor amplifier.
Electron devices with semiconductor targets are known. However,
such devices have been relatively low power, low frequency devices.
The deflection means for the beam were primarily suitable for low
frequency signal inputs.
SUMMARY OF THE INVENTION AND OBJECTS
It is a general object of the present invention to provide an
electron bombarded semiconductor device incorporating improved
laminar flow electron gun, beam deflection means and an improved
semiconductor target.
It is another object of the present invention to provide a highly
efficient, highly linear broad band electron bombarded
amplifier.
The foregoing and other objects of the invention are achieved by an
amplifier having an elongated envelope with a laminar flow electron
gun projecting a longitudinal electron beam disposed at one end of
the envelope, semiconductor diodes disposed at the other end of
said envelope to form a target for said beam means, a delay line
disposed between the gun and target in cooperative relationship
with said beam to deflect the beam, and means for applying a signal
to one end of the delay line whereby it travels along the line in
synchronism with the electron beam to deflect the beam and control
the amount of the beam which impinges upon the semiconductor diodes
forming the target. The invention also incorporates an improved
target configuration.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is an elevational view in section showing an electron beam
semiconductor device in accordance with the invention.
FIG. 2 is a plan view of the delay line beam deflection
circuit.
FIG. 3 is an end elevational view of the delay line shown in FIG.
2, taken along line 3--3 of FIG. 1.
FIG. 4 is a front view showing the semiconductor target assembly of
the present invention taken along the line 4--4 of FIG. 1.
FIG. 5 is a sectional view of the target assembly.
FIG. 6 shows a preferred semiconductor diode target.
FIG. 7 is a sectional view taken along the line 7--7 of FIG. 1
showing the mask disposed in front of the target.
FIG. 8 is a drawing of an RF lead-through for connecting to the
diode target.
FIG. 9 is a schematic circuit diagram showing a single diode
connected in a Class A amplifier.
FIG. 10 shows the output voltage waveform at the load with linear
deflection of the beam for the circuit shown in FIG. 9.
FIG. 11 is a schematic circuit diagram showing two diodes connected
in a Class B amplifier circuit.
FIG. 12 shows the output voltage waveform at the load with linear
deflection of the beam for the circuit shown in FIG. 11.
FIG. 13 shows a semiconductor diode target with integral bypass
capacitors.
FIG. 14 is a schematic circuit diagram of the device shown in FIG.
13.
DESCRIPTION OF PREFERRED EMBODIMENT
Referring to FIG. 1, a laminar flow sheet electron beam is formed
by the electron gun 11. This beam is projected along the tube
envelope 12 through a deflection structure 13 which imparts
vertical motion to the electron beam due to the electric fields
between its upper and lower conductors 14 and 16. This is followed
by a drift space 17, beyond which is located the semiconductor
target assembly 18. The beam deflection at the targets is
proportional to the voltage applied to the input of the deflection
structure. Reverse biased semiconductor diodes form the target. The
target assembly and diodes will be presently described.
When the diodes are bombarded by the incident electrons,
hole-electron pairs are created within the reversed bias diode. The
internal electric fields due to the reverse bias cause either holes
or electrons, or both, of these carriers to flow through the diode
and through the external load Z.sub.L, FIGS. 9 and 11.
The incident velocity with which the beam electrons strike the
target is typically chosen to be between 10 and 20 kV. For each
electron entering the target, a current multiplication takes place
which is approximately 2,000:1 at 10 kV and 5,000:1 at 20 kV. The
current flow in the targets is then proportional to the electron
beam current striking the target. This basic property of the device
leads to its linear amplification properties. A single diode target
is suitable for use as a Class A amplifier or as a d.c. pulse
amplifier. Twin targets such as shown in FIGS. 4, 5 and 13 are
suitable for use as Class B RF or video amplifiers. The manner in
which the diode targets are connected to the load is shown in FIGS.
9 and 11 for Class A and Class B operation. A Class A device is a
simple series connection of a d.c. voltage source V.sub.bb, the
semiconductor diode 21 and the resistive load Z.sub.L. The load is
typically a coaxial line or microstrip transmission line terminated
in its characteristic impedance. The source voltage V.sub.bb
divides itself between a voltage drop across the diode V.sub.ST and
a voltage drop across the load V.sub.L. In a Class A device, the
electron beam is given a quiescent position which illuminates
one-half the diode. This gives a resulting quiescent current which
is one-half of the peak current flowing during a deflection
cycle.
The Class B device, FIG. 11, consists of two Class A circuits
connected to a common load Z.sub.L. The spacing between the two
diodes in the target is arranged so that the quiescent position of
the beam lies between the two targets and, ideally, no current
flows unless the beam is deflected. Deflecting the beam to the
upper diode causes a current to flow so that the positive polarity
of the voltage V.sub.L is developed across the load. Deflecting the
beam onto the other target causes the opposite polarity to be
developed. Current flowing in the diode at any instant of time is
directly proportional to the amount of beam incident on the diode.
Thus, there is a linear relationship between the beam deflection
and the output voltage V.sub.L generated across the load. The ideal
Class B device has the advantage that no current flows through the
load when the beam is in its undeflected position. For purposes of
simplicity, the remainder of the description will be directed to
Class B type devices.
The electron gun 11 serves to develop a sheet beam which is
directed along the envelope towards the rectangular diode targets.
The electron gun includes an indirectly heated strip cathode 26 for
emitting electrons, an apertured electrode 27 which serves as the
grid and is closely adjacent to the strip cathode 26. An anode is
spaced from said cathode electrode and cooperates therewith to
provide a substantially uniform electric field at the surface of
the cathode strip. Electrons emit normal to the entire cathode
surface in a flat or sheet beam. The anode also forms a divergent
electrostatic lens along the path of the beam. Accelerating and
focusing means in the form of an electrode 29 disposed further
along the path of the beam accelerate and focus the beam towards
the semiconductor targets. The members 31 and 32 serve to provide a
field-free region for the beam to drift to the deflection structure
13. A suitable electron gun is described in copending application,
Ser. No. 149,445, filed June 3, 1971, entitled "Laminar Flow
Electron Gun and Method."
The upper plate 14 of the deflection system 13 is in the form of a
meander line which defines a travelling wave deflection structure.
The meander line is in the form of a sheet or plate which includes
slots 15a, 15b extending inwardly alternately from opposite sides
to form the structure. This eliminates electron transit time, and
high frequency deflection limitations. It is a constant impedance,
constant phase velocity 50 ohm line disposed above the ground plane
16. It is driven from a coaxial input connector 30 and the far end
of the line is brought out through another coaxial connector 35 to
an external termination, or terminated internally. For maximum
deflection sensitivity, the spacing between the meander line 14 and
the lower ground plane 16 increases with distance down the length
of the tube. This prevents beam interception of electrons as the
electron beam deflection increases toward the far end of the line.
In the region where deflection is zero, at the input end of the
line the spacing can be less which leads to increased deflection
sensitivity at the input end of the structure. Alternatively, for
somewhat reduced deflection sensitivity, the initial spacing is
increased and tapering of the spacing is not necessary. The line is
substantially wider than the electron beam with which it interacts
thereby providing a more constant electric field to the beam. The
increased width provides the desired impedance.
The meander line is supported by a pair of spaced rings 33 and 34
carried in the tube envelope. The rings are each provided with a
web 36, FIG. 3, through which extends a pair of spaced rods 37 and
38. The meander line is disposed underneath the rods and is held or
supported by the rods by means of tabs 41 which are spot welded to
the top of the meander line. The lower plate 16 is supported from
the meander line by means of side strips 42 and 43, FIG. 3.
By way of example, the meander line design can be chosen to have a
phase velocity which is 0.2 times the velocity of light. This
corresponds to a synchronous electron velocity of 10,000 volts. The
velocity of the waves on the meander line structure is essentially
independent of frequency.
The target assembly 18 is shown in FIGS. 4, 5, 6 and 7. The target
assembly includes a support 46 adapted to receive a sealing ring
47, FIG. 1, which is welded to the sealing ring 48 carried by the
envelope. The support 46 receives a coaxial conductor 49 to be
presently described with its inner conductor projecting into the
tube envelope. The support carries a beryllium oxide substrate 51
on which the semiconductor diodes forming the target are mounted.
Referring to FIG. 4, diodes 52 and 53 are mounted on metallized
areas 54 and 56, respectively. The metallized area 56 is connected
by leads 57 to the center conductor of the coaxial input and forms
the common terminal. The metallized area 54 is connected to a lead
58 which extends through the support and is sealed thereto as, for
example, by means of a sealing ring 59 connected to the ceramic
sleeve 60 which surrounds the lead. The other terminal of the diode
52 is connected to the metallized area 56 forming the common
connection between the two diodes. The second terminal of the diode
53 is connected to a metallized area 61 and thence to an input lead
62 which extends through the support and is sealed as described
above. The beryllium oxide substrate is metallized around the
entire outer surface as shown at 63. This surface is connected to
the outer conductor of the coaxial lead to maintain the area at
ground potential. This also acts as the ground return for the d.c.
supply. A mask 64, FIG. 7, is mounted on the front wall of the
mount 46 by means of screws 66. The mask is provided with a pair of
spaced windows 67 and 68 which expose only the active area of the
diodes 52 and 53 to the electron beam.
The diodes 52 and 53 may be formed by ion implantation on bulk
material or by diffusion into epitaxial material. Referring to FIG.
6, N-type silicon 71 is bonded directly to a high thermal
conductivity N+ substrate 72. The upper surface includes a silicon
dioxide layer 73 which is provided with a window 74 through which
is formed a P-type region 76. An aluminum metal overlay 77 provides
the contact to the other terminal of the diode. The aluminum metal
layer is sufficiently thin so that it can be penetrated by the
electron beam to form the secondary electrons within the bulk of
the diode near the P-N junction.
The RF connection 49 may be of the type shown in FIG. 8 and include
a body portion 81. A window support 82 placed in the upper bore of
the member 81 extends upwardly to receive metallized window 83. The
lower portion of the window receives the pin assembly 84 which
extends upwardly to provide the coaxial interconnection and extends
downwardly concentric with the metallic tube 86 and is maintained
in spaced relationship by a ring 87.
A target assembly 18 including bypass capacitors is shown in FIG.
13 and the equivalent circuit is shown in FIG. 14. Since the target
is substantially the same as that shown in FIG. 4, the same
reference numerals are applied to like parts. The target assembly
includes a beryllium oxide substrate 51 on which the semiconductor
diodes forming the target are mounted. Referring to FIG. 13, diodes
52 and 53 are mounted on metallized areas 54 and 56, respectively.
The metallized area 56 is connected by leads 57 to the center
conductor of the coaxial input and forms the common terminal. The
metallized area 54 is connected to a lead 58 which extends through
the support and is sealed thereto as described above. The other
terminal of the diode 52 is connected to the metallized area 56
forming the common connection between the two diodes. The second
terminal of the diode 53 is connected to a metallized area 61 and
thence to an input lead 62 which extends through the support and is
sealed thereto. The beryllium oxide substrate includes a third
metallized area 91 connected to the outer conductor of the coaxial
lead. This area extends under metal members 92 and 93 each of which
forms one plate of a capacitor and serves to form the other plate.
A dielectric, not shown, is disposed between the plates. Leads 94
connect to the areas 54 and 61. Referring to FIG. 14, the
capacitors are shown at 96 and 97. The capacitors provide for
higher frequency operation of the amplifier.
In conclusion, we have shown a new type of RF amplifier which
exhibits low pass amplifier characteristics and can operate from
d.c. up to some predetermined cutoff frequency. In contrast to most
microwave vacuum tube amplifiers, its dimensions do not grow
inversely with frequency. Compact, light-weight amplifiers can be
designed and built which have power output capabilities up to
several kilowatts. One of the most significant characteristics of
this device is its efficiency capability. The absence of the
required magnetic focusing field greatly reduces the weight, size
and complexity of the device.
* * * * *