U.S. patent number 3,742,229 [Application Number 05/267,667] was granted by the patent office on 1973-06-26 for soft x-ray mask alignment system.
This patent grant is currently assigned to Massachusetts Institute of Technology. Invention is credited to Henry I. Smith, David L. Spears, Ernest Stern.
United States Patent |
3,742,229 |
Smith , et al. |
June 26, 1973 |
SOFT X-RAY MASK ALIGNMENT SYSTEM
Abstract
An alignment system for a soft X-ray lithographic system for
aligning a mask with a substrate to be printed with a pattern
including a first registration means on the mask and second
registration means on the substrate; one of the registration means
being a first soft X-ray absorber means of a predetermined form;
the other registration means being a second soft X-ray absorber
means having a space in it with the same predetermined form, and
one of the registration means being carried over a soft X-ray
transparent registration window on the mask, the other registration
means being carried over a soft X-ray transparent registration
window on the substrate.
Inventors: |
Smith; Henry I. (Sudbury,
MA), Spears; David L. (Acton, MA), Stern; Ernest
(Concord, MA) |
Assignee: |
Massachusetts Institute of
Technology (Cambridge, MA)
|
Family
ID: |
23019704 |
Appl.
No.: |
05/267,667 |
Filed: |
June 29, 1972 |
Current U.S.
Class: |
378/34;
250/492.2; 430/967; 430/22; 216/12 |
Current CPC
Class: |
G03F
9/7076 (20130101); H01L 21/00 (20130101); Y10S
430/168 (20130101) |
Current International
Class: |
H01L
21/00 (20060101); G03F 9/00 (20060101); G01n
021/34 () |
Field of
Search: |
;250/49.5TE,65R
;29/578,579 ;156/3,16,17 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Lawrence; James W.
Assistant Examiner: Dixon; Harold A.
Claims
What is claimed is:
1. An alignment system for a soft X-ray lithographic system
including a registration system for registering a mask with a
substrate to be printed with a pattern comprising a first
registration means on said mask and second registration means on
said substrate, one of said registration means being a first soft
X-ray absorber means of a predetermined form, the other of said
registration means being a second soft X-ray absorber means having
a space in it of said predetermined form and one of said
registration means being carried over a soft X-ray transparent
registration window on said mask, the other registration means
being carried over a soft X-ray transparent registration window on
said substrate, one of said registration means being the obverse of
the other.
2. The alignment system of claim 1 in which said predetermined form
includes four salient portions.
3. The alignment system of claim 2 in which said salient portions
are arranged in spaced pairs on transverse axes.
4. The alignment system of claim 1 further including a soft X-ray
detector for detecting soft X-rays passing about said first soft
X-ray absorber means and through the space in said second soft
X-ray absorber means, and a first null detector means for
determining when said first absorber means blocks the space in said
second absorber means indicating that said mask and substrate are
in registration.
5. The alignment system of claim 4 further including a
piezoelectric positioning device responsive to said first null
detector means for moving said mask and substrate relative to one
another to provide proper registration of said first registration
means.
6. The alignment system of claim 1 in which there are at least two
sets of first and second registration means on each mask and
substrate respectively.
7. The alignment system of claim 1 further including a benchmark
system for properly positioning each pattern, on each mask in a set
of masks, relative to the corresponding patterns on the other masks
of the set, said benchmark system including a benchmark of
predetermined form defined in first material.
8. The alignment system of claim 7 in which said benchmark of
predetermined form includes four salient portions.
9. The alignment system of claim 8 in which said salient portions
are arranged in spaced pairs on transverse axes.
10. The alignement system of claim 7 in which said predetermined
form is defined by a space surrounded by a first material.
11. An alignment system for a soft X-ray lithographic system
comprising:
a master mask having at least a first registration means of a first
form in soft X-ray absorber material carried on a soft X-ray
transparent portion of said master mask;
a number of pattern masks each having on a soft X-ray transparent
portion one second registration means for each of said first
registration means, said second registration means including a
second form similar to said first form in soft X-ray absorber
material; and
a substrate to be exposed through said pattern mask and having one
third registration means for each of said second registration
means, said third registration means including a third form obverse
to said second form in soft X-ray absorber material.
12. The alignment system of claim 11 further including a soft X-ray
detector for detecting soft X-rays passing about said second and
third registration means, and null detector means for determining
when said second and third registration means block transmission of
soft X-rays indicating that said mask and substrate are in
registration.
13. The alignment system of claim 11 further including a benchmark
system for properly positioning each pattern, on each mask in a set
of masks, relative to the corresponding patterns on the other masks
of the set, said benchmark system including a plurality of first
benchmark means, one for each pattern to be exposed, carried on
said master mask on a soft X-ray transparent portion, and a
plurality of second benchmark means, one for each pattern to be
exposed, carried on each of said pattern masks.
14. A method of producing a soft X-ray alignment system for
alignment of a soft X-ray mask and substrate comprising:
on a soft X-ray transparent portion of a master mask generating a
first registration means of a first form in soft X-ray absorber
material;
generating from said master mask on each of a plurality of pattern
masks a second registration means of a second form similar to said
first form in soft X-ray absorber material on a soft X-ray
transparent portion; and
generating on a substrate third registration means obverse to said
second form for alignment with respective ones of said second forms
on successive ones of said pattern masks.
15. A method of producing a soft X-ray alignment system for
alignment of a soft X-ray mask and substrate comprising:
generating on a soft X-ray transparent portion of a master mask a
first registration means of a first form in soft X-ray absorber
material;
generating on a soft X-ray transparent portion of a master mask a
first benchmark means of a second form in soft X-ray absorber
material;
generating from said master mask on each of a plurality of pattern
masks second registration means of a third form similar to said
first form in soft X-ray absorber material on a soft X-ray
transparent portion;
generating from said master mask on each of said plurality of
pattern masks second benchmark means of a fourth form similar to
said second form.
Description
The invention herein described was made in the course of work
performed under a contract with the Department of Air Force, U. S.
Department of Defense.
FIELD OF INVENTION
This invention relates to an alignment system for ensuring that
each soft X-ray mask in a set of such masks is properly registered
with a substrate to be exposed and that each pattern on each mask
is properly positioned on that mask relative to the corresponding
patterns on the other masks of the set.
BACKGROUND OF INVENTION
Recently soft X-ray lithography has been proposed as a technique
for replicating submicron resolution planar patterns, Soft X-Ray
Lithographic Apparatus and Process, Smith et al., Ser. No. 217,902
filed Jan. 14, 1972. Soft X-ray masks have been fabricated with
acoustic surface wave transducer patterns with 1.3 micron electrode
spacing and have been successfully replicated. Thus soft X-ray
lithography has shown a resolution capability greater than that of
ordinary photolighography and comparable to the scanning electron
beam techniques. The simplicity and low cost of soft X-ray
lithography indicate that it would have a significant impact in
ultra-high resolution device fabrication in the future. However, in
many fabrication procedures several masking steps may be required
and the patterns produced by one mask must be precisely
superimposed with respect to patterns produced by the other masks.
However, the precision required is a great deal more than before;
for the previous mask replication techniques did not reproduce
patterns having elements in the submicron range and the scanning
electron beam technique which did create patterns having elements
in the submicron range did so by tracing each pattern individually,
not by a process of mask replication, so that no mask registration
was necessary. Each mask in a set of masks required to fabricate a
complete circuit or device on a substrate must have its pattern
properly positioned with submicron precision related to the
corresponding pattern on each of the other masks of the set.
Otherwise although the mask and substrate may be properly
registered the pattern may be out of alignment with a pattern or
patterns previously replicated in the same pattern area.
SUMMARY OF INVENTION
It is therefore an object of this invention to provide an alignment
system for a soft X-ray lithographic system which is capable of
submicron precision compatible with that of the soft X-ray
lithographic replication and which is simple, inexpensive and
readily makes use of the soft X-rays available from the soft X-ray
lithographic operations.
It is a further object of this invention to provide such an
alignment system which provides for precise registration of each
mask in a set of masks with a substrate to be exposed.
It is a further object of this invention to provide such an
alignment system which ensures that each pattern on each mask in a
set of masks is properly positioned on that mask relative to the
corresponding patterns on the other masks of the set.
The invention results from the realization that for effective use
of soft X-ray lithographic techniques an alignment system is
absolutely essential and that because of the high precision i.e.
very small pattern elements in the micron range, obtained with such
techniques a high precision alignment system is also essential and
more importantly can best be made using the soft X-rays available
from the soft X-ray lithographic operation.
The invention features an alignment system for a soft X-ray
lithographic system for aligning a mask with a substrate to be
printed with a pattern. There is a first registration means on the
mask and second registration means on the substrate. One of the
registration means is a first soft X-ray absorber means having a
predetermined form; the other of said registration means is a
second soft X-ray absorber means having a space in it of the same
predetermined form. One of the registration means is carried over a
soft X-ray transparent registration window on the mask and the
other registration means is carried over a soft X-ray transparent
registration window on the substrate.
DISCLOSURE OF PREFERRED EMBODIMENT
Other objects, features and advantages will occur from the
following description of a preferred embodiment and the
accompanying drawings, in which:
FIG. 1 is a diagrammatic plan view of a master mask having
registration means and bench mark means according to the alignment
system of this invention;
FIG. 2 is a diagrammatic, elevational, cross-sectional view taken
along lines 2--2 of FIG. 1;
FIG. 3 is a diagrammatic cross-sectional view illustrating exposure
of the electron sensitive resist material using a scanning electron
beam microscope to produce the registration means and bench mark
means on the master mask;
FIG. 4 is a diagrammatic, elevational view of the master mask shown
in FIG. 3 after the exposed resistive material has been
developed;
FIG. 5 is a diagrammatic, elevational, cross-sectional view of the
master mask after a soft X-ray absorber material has been deposited
in the developed areas and the remaining portions of the electron
sensitive resist material have been dissolved away;
FIG. 6 is a diagrammatic, cross-sectional, elevational view showing
the use of soft X-rays to create a pattern mask from the master
mask;
FIG. 7 is a diagrammatic, cross-sectional, elevational view of the
pattern mask of FIG. 6 after the exposed portions of the resistive
material have been developed;
FIG. 8 is a diagrammatic, cross-sectional, elevational view of the
pattern mask of FIG. 7 after a soft X-ray sbsorber has been
deposited in the developed areas and the remaining soft X-ray
resistive material has been dissolved away;
FIG. 9 is a diagrammatic plan view of the pattern mask of FIG.
8;
FIG. 10 is a diagrammatic, cross-sectional, elevational view of the
pattern mask taken along line 10--10 of FIG. 9 after patterns have
been fabricated on it;
FIG. 11 is a diagrammatic, cross-sectional, elevational view of the
pattern mask of FIG. 10 after windows have been etched beneath each
of the registration means and each of the patterns;
FIG. 12 is a diagrammatic, cross-sectional, elevational view
showing the use of soft X-rays and the pattern mask to create
registration means on a substrate;
FIG. 13 is a diagrammatic, cross-sectional, elevational view of the
substrate of FIG. 12 after the exposed portion has been developed
and replaced by a soft X-ray absorber material and the unexposed
portion has been dissolved;
FIG. 14 is a view of the substrate of FIG. 13 after windows have
been etched in it beneath the registration means;
FIG. 15 is a plan view of the substrate of FIG. 14;
FIG. 16 is a diagrammatic, cross-sectional, elevational view of a
soft X-ray lithographic system using an alignment system according
to this invention to obtain proper registration between a pattern
mask and a substrate to be printed; and
FIG. 17 is a diagrammatic, axonometric view of a pattern mask
having a multiplicity of pattern areas which uses registration
means and bench mark means according to the alignment system of
this invention.
The invention may be accomplished using a master mask which carries
on it alignment means including at least two registration means and
a bench mark means for each pattern which is to be produced on a
substrate. The registration means and bench mark means are produced
on the master mask using scanning electron beam microscope
techniques and each of the alignment means has a predetermined form
defined in a soft X-ray absorber material located on a transparent
portion of the master mask. Similarly each of the bench mark means
has a predetermined form defined in soft X-ray absorber material
carried on soft X-ray transparent portions of the master mask.
Using soft X-ray lithographic techniques a set of pattern masks is
created by exposure to soft X-rays through the master mask. Each of
the resulting pattern masks contains one or more registration means
which are similar to the registration means on the master mask.
Each of these registration means may be either a positive or a
negative of the predetermined form that the registration means
takes on the master mask. Similarly each of the pattern masks
contains a number of bench mark means corresponding to the bench
mark means on the master mask and each of these bench marks may
also be either a positive or negative of the respective bench mark
means on the master mask. Associated with each of these bench mark
means on the pattern mask is a pattern area. A pattern is
fabricated in each of these areas on each of the pattern masks
using scanning electron beam microscope technology. By the use of
the bench marks as a starting point the scanning electron beam
microscope can precisely lay down a pattern on a mask and lay down
compatible patterns at the same relative position on each of the
other pattern masks in the set. Thus each of the plurality of the
patterns which must be printed on a pattern location on a substrate
in order to produce the final whole pattern is precisely aligned
with each of the other patterns on each of the other pattern masks
which must be successively applied to that substrate. The
registration means created on the substrate will be of the same
form as those on the master mask and on each of the pattern masks
but they will be the obverse of those on the pattern mask so that
when the registration means on any particular pattern mask are in
proper registration with the registration means on the substrate no
soft X-rays can penetrate that area of the pattern mask and
substrate. Thus soft X-ray sensors may be used to sense any soft
X-rays coming through the registration means and a null detector
responsive to the sensor means may be used to indicate when precise
registration has occureed. A servo-mechanism using one or more
piezoelectric drive units may be used to move the substrate and
pattern masks relative to one another to obtain a null indication
which represents precise registration. When registration has been
achieved the pattern carried on each of the pattern locations on
the pattern mask aligned with the substrate is then printed on the
substrate using soft X-ray techniques. After the printing with the
first pattern mask has been accomplished that mask may be removed
and a second pattern mask put in its place and brought into proper
registration with the substrate and the second set of patterns is
applied to the pattern locations on the substrate. Operation
continues in this way until each of the individual patterns carried
by each of the pattern masks has been applied to each of the
corresponding locations on the substrate and an entire pattern has
been fabricated in each of the pattern locations on the substrate.
The details of soft X-ray lithography techniques may be obtained
from co-pending application Soft X-Ray Lithographic Apparatus and
Process, Ser. No. 217,902, filed Jan. 14, 1972 by Henry I. Smith,
David L. Spears and Ernest Stern.
The etching techniques used to produce relatively transparent
portions or windows in the various masks and substrates is
explained in more detail in the co-pending application entitled
Soft X-Ray Mask Support Substrate filed on even date herewith by
David L. Spears, Henry I. Smith and Ernest Stern.
There is shown in FIG. 1 a master mask 10 having alignment means
including two registration means 12 and 14 and two bench mark means
16 and 18. Typically each mask has two registration means and each
pattern area has associated with it one bench mark means. Thus in
FIG. 1 where master mask 10 is shown designed to carry two pattern
areas 20, 22 there are two bench mark means 16 and 18. Each of
registration means 12 and 14 includes a layer of soft X-ray
absorber material 24 which has an open space 26 in it that defines
the form 28 of the registration mark 25. In this case, the form 28
of registration mark takes the shape of an object with four salient
points.
Similarly bench mark means 16 and 18 each includes a layer 30 of
soft X-ray absorber material. The bench mark 32 is formed by four
spaces 34, which define the form 36 of a Greek cross without the
center portion. Each of registration means 12 and 14 and each of
bench mark means 16 and 18 is carried on transparent portions of
master mask 10 over windows 40, 42 and 44 and 46, respectively,
FIG. 2. The membrane 48, 50, 52 and 54 in each of windows 40, 42,
44 and 46 is quite thin and thus transparent to soft X-rays;
whereas the remaining areas of master mask 10, which are much
thicker, are relatively opaque to soft X-rays.
Master mask 10 may be made beginning with a wafer 60, FIG. 3, of
silicon which has been doped to a depth of a few microns with boron
to form a boron diffusion layer 62. Wafer 60 is then covered on one
surface by a protective layer 64 of, for example, silicon dioxide
and on its other surface with a layer 66 of polymethyl methacrylate
which is sensitive to electron beam exposure. Wafer 60 is then
submitted to a scanning electron beam microscope 68 which traces
the required patterns on layer 66 to provide registration means 12
and 14 and bench mark means 16 and 18. Wafer 60 is then subjected
to a developer such as a solution of 40 percent methyl isobutyl
ketone and 60 percent isopropyl alcohol to remove the exposed
portions 67 of layer 66 that now define registration means 12 and
14 and bench mark means 16 and 18.
The various holes 70, FIG. 4, remaining in layer 66 are then filled
with a soft X-ray absorber material such as by evaporation coating
with gold. The remaining portions of layer 66 are then removed by
dissolving them with a solution of trichloroethylene. The remaining
portions of soft X-ray absorber material 24, FIG. 5, now define the
registration mark 25 of the registration means 12 and 14, and the
soft X-ray absorber material 30 defines the bench mark 32 in bench
mark means 16 and 18. Openings 72, 74, 76 and 78 are etched in
layer 64 using an etch such as buffered hydrofluoric acid which
attacks the silicon dioxide of layer 64 but not the silicon of
wafer 60. Wafer 10 is now prepared to have windows 40, 42, 44 and
46, FIG. 2, etched in it. An etchant which does not attack the
remaining portions of the silicon dioxide layer 62 but does attack
the open areas of silicon wafer 60 at openings 72, 74, 76 and 78
may be used. This may be accomplished using a 115.degree. C.
solution of 68 ml ethylene diamene, 12g pyrocatechol, and 32 ml
water for about 11/2 hours. This etchant performs well on silicon
wafer 60 but does not attack the boron diffused layer 62. Thus, as
shown in FIG. 2, windows 40, 42, 44 and 46 are created with thin
membranes 48, 50, 52 and 54, respectively, covering them. This
technique is described in detail in the application Soft X-Ray Mask
Support Substrate by David L. Spears, Henry I. Smith and Ernest
Stern filed on even date herewith.
The completed master mask 10, FIG. 2, may now be used as in FIG. 6
to create a set of pattern masks one of which, pattern mask 80,
includes a wafer 82 of silicon containing a boron diffusion layer
84 similar to that discussed, supra. Wafer 82 carried a layer 86 of
soft X-ray sensitive material such as polymethyl methracrylate on
one surface and a protective layer 88 of material such as silicon
dioxide on its other surface. Layer 86 is exposed to soft X-rays 91
from soft X-ray source 90 through windows 40, 42, 44 and 46 in
master mask 10 so that the registration means 12 and 14 and the
bench mark means 16 and 18 are defined on layer 86. The exposed
portions 92 of layer 86 are then subjected to a developer such as a
solution of 40 percent methyl isobutyl ketone and 60 percent
isopropyl alcohol to remove the exposed portions 92 of layer 86
leaving holes 94, FIG. 7, in their place. Holes 94 are filled with
a soft X-ray absorber material such as gold and the remaining
portions of layer 86 are then removed by dissolving them with a
solution of trichloroethylene leaving a layer of soft X-ray
absorbing material 96, FIG. 8, which constitutes a second set of
registration means 12' and 14' which are similar to the original
registration means 12 and 14 on master mask 10, FIG. 1.
Registration means 12' and 14', FIG. 9, on pattern mask 80 have the
same form 28' as registration means 12 and 14 except that in this
case the registration mark 25' is defined by the soft X-ray
absorber material 24' itself, not, as in the case of registration
means 12 and 14, by the space 26 surrounded by the soft X-ray
absorber layer 24. Similarly, bench mark means 16' and 18' include
bench marks 32' whose form is defined by soft X-ray absorber layer
30' which actually fills spaces 34' to define the form 36' of bench
mark 32' as compared with bench mark 32 wherein the form 36 was
defined by the soft X-ray absorber layer 30 surrounding spaces 34.
Although in FIGS. 1-9 it is indicated that master mask 10 has one
variation of the registration marks and bench marks which may
arbitrally be designated as positives and the pattern mask 80 has
registration marks and bench marks which may be designated
negatives, i.e. marks 25', 32' are the negatives or the obverse of
marks 25 and 32, this is not a necessary limitation of the
invention. For example, if a negative resist were used in place of
the polymethyl methacrylate layer 86 then marks 25' and 32' would
be positives of marks 25 and 32.
Pattern areas 20' and 22' on pattern mask 80 may now be imprinted
with patterns 100 and 102, FIG. 10, using a scanning electron beam
microscope guided by bench mark means 16' and 18' in a similar
manner as discussed with reference to FIGS. 3-5 and as explained in
more detail in co-pending application Soft X-Ray Lithographic
Apparatus and Process, Ser. No. 217,902, filed Jan. 14, 1972 by
Henry I. Smith, David L. Spears and Ernest Stern. Holes 104, 106,
108 and 110 may now be created in silicon dioxide layer 88 in the
same manner as discussed previously with relation to layer 64.
Windows 112, 114, 116 and 118, FIG. 11, are then etched in wafer 82
as discussed supra, leaving soft X-ray transparent membranes 120,
122, 124 and 126.
A substrate 130, FIG. 12, on which a pattern is to be constructed
is prepared from a silicon wafer 132 having a layer 134 of soft
X-ray sensitive material such as polymethyl methacrylate on one
surface and a protective layer 136 such as silicon nitride on the
other surface. Layer 134 is then exposed to soft X-rays 91', FIG.
12, through a pattern mask 80. In this operation the pattern areas
100 and 102 are not exposed since it is only required to produce
alignment means on the substrate 130. Some means, such as soft
X-ray opaque elements 138, 140 may be used to cover windows 116 and
118 in pattern mask 80 to prevent the patterns 100 and 102 from
being patterned onto layer 134. However, soft X-rays from soft
X-ray source 90' do pass through windows 112 and 114 through the
registration means 12' and 14' and expose portions 142 of layer
134. The exposed portions 142 are removed by dissolving them with
40 percent methyl isobutyl ketone and 60 percent isopropyl alcohol
and are replaced with soft X-ray absorber material; then the
remaining unexposed portions 141 of layer 134 may be dissolved in
trichloroethylene leaving only registration means 12" and 14", FIG.
13. Windows 150 and 152, FIG. 14, may now be created in wafer 132
by attacking the silicon with an etchant such as a combination of
hydrofluoric and nitric acid or a combination of hydrofluoric acid,
nitric acid and acetic acid. With these etchants the etching will
be stopped substantially short of the other surface by means of a
neutralizing bath. In the case of substrate 130 a less selective
etchant may be used because maximum transparency through the use of
a very thin membrane is not absolutely necessary as will be seen
subsequently. Registration means 12" and 14" on substrate 130, FIG.
15, include a layer 24" of soft X-ray absorber material in which is
contained a space 26" having the form 28" of registration mark 25".
Since pattern mask 80 is flipped over to print on substrate 130 the
arrangement of the negative means on substrate 130 is a mirror
image of that on pattern mask 80. Registration means 12" and 14"
are the obverse of registration means 12' and 14' and are the same
as registration means 12 and 14. But the latter of this particular
set of relationships is not essential to the invention. However, it
is important that registration means 12" and 14" be the obverse of
registration means 12' and 14', whether or not either set of
registration means 12', 14' or 12", 14" are the same or the obverse
of the original registration means 12 and 14 on master mask 10.
Substrate 130, FIGS. 14 and 15, carries two pattern areas 20" and
22" but no bench marks as the final alignment requires that only
each successive pattern mask be properly aligned with the substrate
130 during exposure. Previously each of the patterns on each of the
pattern areas such as 20' has been created using the bench mark
means as a guide for the scanning electron beam microscope so that
each pattern on the pattern areas on each of the succeeding pattern
masks is properly aligned with respect to each of the patterns in
the same location on each of the other pattern masks of the
set.
In operation substrate 130, FIG. 16, is coated with a layer 160 of
soft X-ray sensitive material such as polymethyl methacrylate and
is subjected to soft X-rays 91" from a soft X-ray source 90"
through a pattern mask 80. Soft X-rays 91" from soft X-ray source
90" pass through windows 112 and 114 in pattern mask 80 only in the
areas not blocked by the soft X-ray absorber material 24'. The soft
X-rays which are not blocked by soft X-ray absorber material 24'
then pass through substrae 130 in the areas not blocked by soft
X-ray absorber material 24". Thus when pattern mask 80 and
substrate 130 are aligned the soft X-ray absorber materials 24" and
24' are also precisely aligned so that no soft X-rays will pass
through substrate 130 and soft X-ray sensor 170 will sense no soft
X-rays. As a result a null point will be detected by null detector
172 and an indication thereof will be submitted to control 174. A
duplicate system including soft X-ray sensor 170' and null detector
172' is associated with registration means 14' and 14". Control 174
may be used to develop signals to drive orthogonally oriented
piezoelectric drives 175, 175' such as are available from Coherent
Optics Inc. (Model 44 Electro-Micrometer) which are capable of
moving substrate 130 very small distances, in the order of microns,
required for the precise alignment of pattern mask 80 and substrate
130.
In operation the soft X-rays 91" passing through windows 116 and
118 of pattern mask 80 would be blocked prior to the registration
operation. Once proper registration is accomplished the blockage
would be removed and the soft X-rays passing through windows 116
and 118 about the patterns 100 and 102 would create an exposure
pattern in layer 160 which could then be developed and further
etched or processed by other means known in the art. After this
operation is complete the next pattern mask of the set would be
introduced in place of pattern mask 80 and the next pattern would
be laid down in areas 20" and 22" until all the patterns required
to make a complete pattern in areas 20" and 22" have been
reproduced on substrate 130.
Typically the substrate made according to this invention would have
a multiplicity of pattern areas on it and would require a pattern
mask having a similar multiplicity of pattern areas and bench mark
means. Thus in FIG. 17 a typical pattern mask 80' includes 42
separate pattern areas 180 each of which has associated with it a
bench mark means 182. Also included are two registration means 184
and 186. Pattern mask 80' is typically 1 inch square and each of
the 42 pattern areas 180 is approximately 65 mils square in
area.
Other embodiments will occur to those skilled in the art and are
within the following claims:
* * * * *