U.S. patent number 3,694,972 [Application Number 05/050,181] was granted by the patent office on 1972-10-03 for method and apparatus for subdividing a crystal wafer.
Invention is credited to Reimer Emeis.
United States Patent |
3,694,972 |
Emeis |
October 3, 1972 |
**Please see images for:
( Certificate of Correction ) ** |
METHOD AND APPARATUS FOR SUBDIVIDING A CRYSTAL WAFER
Abstract
A body, such as a crystalline semiconductor body for the
production of diodes, transistors, thyristors or other electronic
components, is severed from a crystal wafer by placing the wafer
face-to-face onto the surface of a griddle which has a slit along
each cutting line. A sandblast is directed from a jet nozzle upon
the top face of the wafer above the slit, and relative movement is
imparted between griddle and jet nozzle in a direction lengthwise
of the slit, simultaneously exhausting the sand out of the slit. In
this manner, the crystal body is separated from the rest of the
wafer along the slit. Preferably, the device for performing the
method is provided with a griddle whose top surface has a group of
parallel slits extending crosswise to another group of parallel
slits, a comb structure, also with intersecting slits, being
mounted above the griddle surface proper. Such apparatus is capable
of simultaneously severing a multiplicity of individual bodies from
a crystal wafer.
Inventors: |
Emeis; Reimer (8553
Ebermannstadt, DT) |
Family
ID: |
5737534 |
Appl.
No.: |
05/050,181 |
Filed: |
June 26, 1970 |
Current U.S.
Class: |
451/38; 451/102;
451/75; 451/78; 257/E21.239 |
Current CPC
Class: |
B24C
3/322 (20130101); H01L 21/3046 (20130101); B28D
5/00 (20130101) |
Current International
Class: |
B24C
3/32 (20060101); B24C 3/00 (20060101); H01L
21/02 (20060101); H01L 21/304 (20060101); B28D
5/00 (20060101); B24b 001/00 (); B24c 001/00 () |
Field of
Search: |
;51/319,320,8 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
Primary Examiner: Jones, Jr.; James L.
Claims
I claim:
1. The method of subdividing a thin semiconductive crystal wafer
into individual semiconductor members by forming cuts in the wafer
perpendicularly to the faces thereof which comprises cementing a
face of the wafer onto a planar support formed with an array of
slits extending in direction in which the cuts are to be formed in
the wafer, disposing a sandblast nozzle having an elongated outlet
opening, that is narrower than the width of the slits formed in the
support directly above the opposite face of the wafer and in
alignment with one of the slits, blasting a jet of sand having a
grain size of substantially 10 to 30 .mu. from the nozzle onto the
opposite face of the wafer along the respective slit, and then
passing the nozzle along the respective slit and parallel to the
faces of the wafer so as to form a severing cut in the wafer, and
simultaneously removing sand by suction from the respective slit
wherein sand from the nozzle has accumulated.
2. The method of claim 1 wherein the slits are arranged in parallel
criss-cross relationship, and which comprises disposing a plurality
of the sandblast nozzles in alignment with a corresponding
plurality of the slits, blasting a corresponding plurality of jets
of the sand from the nozzles onto the wafer along the respective
plurality of slits, and then passing the plurality of the nozzles
along the respective slits to form severing cuts in the wafer, and
simultaneously sucking the sand accumulating in the respective
slits out of the same.
Description
My invention relates to a method of severing crystalline bodies
from a crystal slice or wafer.
In electrical appliances for industrial, kitchen and other
purposes, it has become increasingly desirable to employ
semiconductor circuit components whose power demand is relatively
low and whose external dimensions, therefore, may be relatively
small.
The use of such small-area semiconductor components in electrical
appliances on the one hand, and the large number of these
components required for such uses, are predicated upon the
availability of particularly economical mass production methods.
These must be of such character, however, as to avoid appreciable
deleterious effect upon the properties, particularly the electrical
qualities, of the semiconductor components produced. The electrical
properties of a semiconductor component are particularly liable to
be impaired when the crystalline body of this component is cut from
a large-area crystalline slice or wafer that incorporates a
sequence of parallel zones having alternate different types of
conductivity parallel to the wafer main faces. When severing the
semiconductor components by sawing or breaking, the separating edge
and surface portion of the resulting bodies is subjected to deeply
penetrating damage and destruction of the crystalline lattice
structure which may virtually form short-circuits across the p-n
junctions where these emerge at the surface so that the junctions
no longer possess a sufficient if any blocking ability. Although
the damaged crystal layers at the surface of the severed
semiconductor components can be eliminated by etching, this method
requires the use of acidic etchants, for example a mixture of
hydrofluoric acid and nitric acid, as well as long periods of
etching time so that any contact electrodes of metal on the
semiconductor component are attacked by the etchant.
It is an object of my invention to devise a different method which,
on the one hand, secures an improved economy of manufacture and, on
the other hand, avoids or minimizes the occurrence of crystalline
damage at the severing edges that require subsequent treatment by
acidic etchant.
To this end, and in accordance with a feature of my invention, I
sever a crystal body from a crystal slice or wafer by placing the
wafer face-to-face onto a surface area of a griddle which is
slitted in that area. I further direct from a nozzle a jet of
sandblast upon the other face of the wafer above each slit and
impart a relative motion between the griddle and the jet in a
direction lengthwise of the slit. Simultaneously, I exhaust the
sand out of the slit. As a result, the crystal body is severed from
the wafer along the slit.
With such a method, the damages to the crystal lattice structure at
the cutting edge of the bodies separated from the crystal wafer are
extremely slight and can be removed within a minimum of time with
the aid of alkaline etchants which do not attack any metal
electrodes attached to the crystal bodies. Consequently, the
blocking ability of any p-n junctions that may emerge at the
severing faces remains fully effective or does not exhibit
appreciable deterioration. Furthermore, cuts of a sharp contour are
produced in the crystal wafers, and the edges of the separated
bodies are free of broken-away localities.
According to further features of my invention, I perform the
above-described method with the aid of a device which has a griddle
whose supporting surface for the crystalline wafer is provided with
crosswise arrays of parallel slits, the device further comprising a
group of metal combs which form a crosswise design matching that of
the slitted griddle and which are stationarily fixed in a
frame.
According to another feature of the invention, a griddle
arrangement particularly simple to manufacture is made of a metal
block which has crosswise parallel incisions at the supporting
surface for the crystalline wafer and whose bottom is traversed by
exhaust bores communicating with the incisions.
The above-mentioned and further objects, advantages and features of
my invention will be apparent from the following description of
embodiments of processing equipment according to the invention
illustrated by way of example on the accompanying drawings in
which:
FIG. 1 is a lateral view of apparatus for severing crystal bodies
from a crystal wafer.
FIG. 2 is a perspective view of the griddle structure in apparatus
according to FIG. 1.
FIG. 3 shows on a larger scale a portion of the wafer-supporting
griddle surface corresponding to FIG. 2.
FIG. 4 is a vertical section through FIG. 3, the left-hand portion
of FIG. 4 being sectioned along the line A--B, and the right-hand
portion of FIG. 4 being sectioned along the line B--C of FIG.
2.
FIG. 5 is a schematic and perspective view of another embodiment of
a griddle applicable in apparatus otherwise corresponding to FIG.
1.
FIG. 6 is a lateral view, partly in section, of a device according
to FIG. 5, the section being taken along the line D--D of FIG.
5.
The apparatus according to FIG. 1 comprises a support 2 with an
opening 3 to which a downwardly extending exhaust pipe 4 is
connected by means of a duct flange. Mounted on the support 2 above
the exhaust opening 3 is a griddle 5. The griddle is fastened on
the support 2 by two angle pieces 7 located opposite each other and
entering into recesses 6 at correspondingly opposite lateral faces
of the griddle 5. The angle pieces 7 are secured to the support 2
by mounting screws such as those visible in FIG. 2. The recesses 6
permit an adjustable fastening of the griddle 5 to the support
2.
The supporting surface 8 on top of the griddle 5 is preferably
lapped to planar shape. Four crystal slices or wafers 9 which, for
simplicity, are shown only by dot-and-dash lines, are placed
face-to-face on top of the griddle. The wafers 9 are preferably
cemented by cellulose varnish to the supporting surface 8 which is
only slightly roughened by the lapping treatment. The crystal
wafers 9, for example, may consist of silicon and may have metal
coatings on their main faces so as to contain a sequence of zones
having alternately different conductivity types and extending
parallel to the main faces. It is the purpose of the apparatus
shown in FIG. 1 to separate the silicon wafers 9 into a
multiplicity of small silicon components for electronic
semiconductor purposes.
Mounted above the support 2 is a sandblasting device 10 with a jet
nozzle 11 directed vertically toward the supporting surface 8 of
the griddle 5. Preferably the nozzle 11 has a slot-shaped orifice.
The sandblasting device is adjustably mounted on a horizontal
holder rod 12 and is connected at the top with a sandblast supply
hose 14. The rod 12 is adjustably mounted on a holder structure 13
which can be displaced in the direction of the arrow 18 within the
plane of illustration, and which can also be displaced in a
direction perpendicular to the plane of illustration, each time in
parallel relation to the supporting surface 8 of the griddle 5. As
is shown in FIGS. 2 and 3, the griddle 5 comprises a frame
structure 5a in which a packet of identical metal combs are firmly
clamped. The tips of the teeth on these metal combs 15, in
totality, constitute the above-mentioned supporting surface 8 of
the griddle for accommodating the crystal wafers 9.
The support 2 is rotatable in a plane parallel to the supporting
surface 8. The support 2 has a lug projecting from the periphery.
The angular movement of the lug is limited by two fixed stops 18 so
that the support 2 can be turned a maximum angular amount of
90.degree..
As will be seen from the section A-B in FIG. 4, a strip-shaped
spacer 16 is arranged on both sides of the griddle 5. Each spacer
is located between two combs 15. The spacer strips thus provide for
slits 21 which are parallel to the combs and interrupt the
supporting surface 8. The section B--C shown in FIG. 4 indicates
that the interspaces between the individual teeth of the combs 15
form further slits 24 perpendicular to the combs 15.
After the crystal wafers 9 are cemented to the supporting surface 8
of the griddle 5, the sandblasting device is so set that the
orifice of the blast nozzle 11 is located above one of the slits
21. When the holder 13 is shifted in the direction of the arrow 18
along the slit 21, starting from the frame 5a of the griddle 5 and
moving at uniform speed, the sandblast cuts through two wafers 9
located above the slit 21. The sand of the blast is exhausted from
beneath the griddle 5 through the slit 21 and the exhaust duct 4.
This prevents the sand from backing up and collecting in the
slit.
After thus producing the severing cut above the slit 21, the holder
13 is shifted perpendicularly to the plane of illustration (FIG.
1), i.e. in the direction of the arrow 25 in FIG. 2, so that the
orifice of the jet nozzle 11 is located above slit 21. Now the
cutting operation is repeated, again starting from the frame 5a of
the griddle 5 by shifting the holder 13 together with the
sandblasting device 10 in the direction of the arrow 18 along the
other slit 21 at uniform speed. This produces another severing cut
through two crystal wafers 9.
After the cuts are completed along all of the parallel slits 21,
the support 2 is turned 90.degree.. Thereafter, the crystal wafers
9 are cut in the same manner as described above, but now along the
slits 24 perpendicular to the slits 21. Subsequently, the small
silicon bodies cut from the wafers 9 are removed from the griddle
8, for example, with the aid of acetone.
A cutting rate of 3 to 5 cm per minute has been found well suitable
for severing crystal wafers 9 or 0.3 mm thick silicon having a
nickel layer of 3 to 5 micron thickness on each of the two main
faces. The width of the severing cut is preferably 0.2 mm. This
cutting width is obtained with a jet nozzle 11 whose slotted
orifice has a width of about 0.15 mm. The width of the slits 21 and
24 in the griddle is preferably twice to three times the width of
the slit-shaped nozzle orifice. The sand employed preferably has a
grain size of 10 to 30 microns, preferably about 20 microns.
After severing the crystal bodies from the silicon wafers 9, the
small silicon bodies already provided with area electrodes, are
etched for 1 to 2 minutes in an aqueous solution of KOH or NaOH The
crystal damages caused by the sandblasting at the surface of these
silicon bodies are so slight that all of the damaged lattice
structure is removed by this treatment, and the full blocking
ability of the p-n junctions emerging at the cutting faces is
preserved without damage to the metal electrodes.
The sandblasting device 10 may also be provided with several jet
nozzles 11' located beside one another, as shown in FIG. 6, so that
simultaneously several parallel cuts can be passed through the
crystal wafers 9.
The further embodiment of the griddle shown in FIG. 5 and
applicable in apparatus otherwise corresponding to FIG. 1,
comprises essentially a prismatic block 31 which is provided at the
supporting surface for the semiconductor wafers 9 with a number of
crosswise and parallel incisions 32 and 33. The other components of
the griddle device according to FIG. 5 are denoted by the same
reference numerals as those used in FIGS. 1 and 2 for corresponding
items respectively.
As will be seen from the cross section illustrated in FIG. 6, the
crosswise parallel incisions 32 and 33 extend downward to
approximately one-half the height of the metal block 31. The bottom
portion of the block 31 is provided with suction bores 34 which
preferably are arranged precisely beneath the intersection points
of the crosswise parallel incisions 32, 33.
The griddle according to FIGS. 5 and 6 can be fastened, in the same
manner as the griddle 5 of FIG. 2, above the suction opening 3 on
the support 2.
To those skilled in the art it will be obvious upon a study of this
disclosure that my invention permits of various modifications and
hence may be given embodiments other than particularly illustrated
and described herein, without departing from the essential features
of my invention and within the scope of the claims annexed
hereto.
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