U.S. patent number 3,673,572 [Application Number 04/879,060] was granted by the patent office on 1972-06-27 for electroluminescent device.
This patent grant is currently assigned to Xerox Corporation. Invention is credited to Gary A. Dir, Philip O. Sliva.
United States Patent |
3,673,572 |
Sliva , et al. |
June 27, 1972 |
ELECTROLUMINESCENT DEVICE
Abstract
An electroluminescent device wherein a memory switch, which
requires no holding current or voltage for its maintenance,
controls the operation of the electroluminescent layer. When the
device is arrayed in a coordinate pattern, individual area of the
device can be selectively addressed to form a pattern of visual
data.
Inventors: |
Sliva; Philip O. (Fairport,
NY), Dir; Gary A. (Penfield, NY) |
Assignee: |
Xerox Corporation (Rochester,
NY)
|
Family
ID: |
25373354 |
Appl.
No.: |
04/879,060 |
Filed: |
November 24, 1969 |
Current U.S.
Class: |
345/76;
315/169.1; 313/463; 315/169.3 |
Current CPC
Class: |
H05B
33/12 (20130101); H05B 33/26 (20130101); G09G
2300/0885 (20130101) |
Current International
Class: |
H05B
33/12 (20060101); H05B 33/26 (20060101); G08b
005/22 (); H05b 037/00 (); H01i 029/18 () |
Field of
Search: |
;340/166EL,324 ;315/169
;313/92 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Yusko; Donald J.
Claims
What is claimed is:
1. A matrix addressable electroluminescent display device
comprising:
a plurality of composite structures arranged in an array, each of
said structures comprising a region of zero bias memory material
adapted to block current below a threshold voltage and to pass
current above said threshold voltage, said zero bias memory
material retaining its last state under zero bias condition,
each of said composite structures also comprising a region of
electroluminescent material and a pair of electrodes between which
said regions of zero bias memory material and electroluminescent
material are disposed at least one of said pair of electrodes being
transparent, and
means for selectively applying an electrical field across
individual pairs of electrodes whereby visual data is formed on
said display device.
2. The apparatus of claim 1 wherein said zero bias memory material
has variable resistance states for varying the state of
luminescence of said electroluminescent material.
3. The apparatus of claim 1 including a capacitive control
impedance in series with said composite structures.
4. The apparatus of claim 1 including pairs of transparent
electrodes whereby said display device may be viewed from both
sides.
5. Electroluminescent apparatus comprising:
a pair of electrodes, at least one of which is light
transparent,
electroluminescent material interposed between said pair of
electrodes, and
zero bias memory material having a low and a high conductive state
and being interposed between said pair of electrodes, said memory
material switching from one of said two conductive states to the
other of said two conductive states when a potential applied
thereacross exceeds a threshold potential level and remaining in
said one of the two conductive states, even after the potential
applied thereacross is reduced to zero until said the other of said
two conductive states is driven back externally to said one of said
two conductive states wherein said memory material activates and
deactivates said electroluminescent material to luminesce
selectively as its conductive state changes.
6. The apparatus of claim 5 wherein said electroluminescent
material is positioned in series with said zero bias memory
material between said electrodes.
7. The apparatus of claim 5 wherein said electroluminescent
material is positioned in parallel with said zero bias memory
material between said electrodes.
8. The apparatus of claim 5 wherein said zero bias memory material
is adapted to revert to its low conducting state when subject to a
source of radio frequency radiation or high amplitude pulses.
9. The apparatus of claim 5 comprising:
zero bias memory material adapted to have variable resistance
states between said low and said high conducting states for varying
the state of luminescence of said electroluminescent material.
10. The apparatus of claim 5 wherein said zero bias memory material
and said electroluminescent material are combined in a
heterogeneous mixture in an epoxy binder material whereby the
background and image areas of said apparatus may be made to
alternately brighten and darken with change in the voltage applied
to said electrodes.
11. The apparatus of claim 5 wherein said zero bias memory material
comprises an amorphous or polycrystalline film of semiconductor
material selected from the group of metal oxides consisting of
zinc, copper, lead, manganese, mercury and aluminum.
12. The apparatus of claim 5 wherein said zero bias memory material
comprises a semiconductor material of reduced metal oxides.
13. The apparatus of claim 5 comprising a control impedance in
series with said electrodes.
14. The apparatus of claim 13 wherein said control impedance
comprises a layer of resistive material overlaying one of said
electrodes and in electrical series with said electrode.
15. The apparatus of claim 13 wherein said control impedance
comprises a capacitor in series with said electrodes.
Description
This invention relates to an electroluminescent device.
Specifically, the invention relates to an electroluminescent panel
display device, controlled by a memory threshold switch, which is
capable of displaying visual data in a matrix array.
BACKGROUND OF THE INVENTION
There has been considerable interest in display panel devices
generally since they may afford the answer to a workable flat
screen television which permit large information displays and which
are observable by many individuals simultaneously. Other uses or
applications may be in radar plotting and read out of computer
data.
The panel display device has certain distinct advantages over the
conventional cathode ray tubes which have become a standard visual
display device. First of all the panel display obviates the need
for deflection coils and associated power consuming circuitry.
Secondly, panel displays as opposed to cathode ray tubes are
capable of being constructed in large sizes such as 3 .times. 4', 4
.times. 5' and up to 20 .times. 40' and they may be made to give
high light outputs with good contrast and high resolution. Thirdly,
panel devices are relatively insensitive to vibration and shock and
the space required with regard to depth is minimal.
In the conventional electroluminescent panel display device a layer
of luminescent or phosphor material is sandwiched between
electrodes and the combination deposited on a substrate such as
glass. Generally, the electroluminescent material is made of
phosphor which emits light when subjected to a time varying
electric field. Where an X-Y or matrix addressable panel is desired
the electrodes may be set up in a grid configuration by applying a
coincident voltage to selected conductors of the X and Y group.
Although electroluminescent panel devices have had successes in
many applications, there exist certain disadvantages in their usage
which must be taken into consideration. One of the disadvantages of
electroluminescent panels is that they generally require separate
sources of voltages for exciting the electroluminescent layer and
for addressing the crosspoints. This requirement represents a
considerable current drain. Another problem ascribable to
electroluminescent panels is that they tend to exhibit cross talk.
That is, crosspoints adjacent to the selected crosspoint in the
grid emit light to a disturbing degree interfering with visual data
or even generating unreliable visual data. Thus, satisfactory
isolation of crosspoints in electroluminescent displays is an
objective which remains elusive.
The disadvantages of the aforementioned electroluminescent devices
have been overcome by our invention. We provide isolation between
selected and unselected crosspoints and utilization of the same
voltage source for exciting the electroluminescent layer as well as
for addressing the selected crosspoints. Moreover, we provide a
semiconductor switching element which controls the operation of the
electroluminescent layer and which has memory of its conductive
state.
The memory element of the present invention is inexpensive to
fabricate and comprises a bistable non-rectifying semiconductor of
amorphous or polycrystalline material having variable resistance
states. When a voltage of a threshold value is applied across the
electrodes of the element it will rapidly change from a blocking or
high resistance state to a conducting or low resistance state. The
element retains its conductive state even under zero bias
conditions and may be returned to its blocking condition by a
further increase in current above a discrete level or by being
subjected to radiation. The provision of a built-in memory
mechanism in a display device has long been sought since it would
reduce the memory storage requirements of computers. Our invention
fulfills this need.
OBJECTS OF THE INVENTION
Accordingly, it is an object of the invention to provide an
electroluminescent display device which is inexpensive to construct
and which is capable of being produced in large sizes.
It is another object of the invention to provide an
electroluminescent device which yields positive or negative
images.
It is a further object of the invention to provide an
electroluminescent panel which furnishes isolation between selected
and unselected crosspoints and which has memory of its conductive
state.
It is yet another object of the invention to provide an
electroluminescent panel which can be operated at high frequencies
without affecting the "on-off" contrast.
BRIEF DESCRIPTION OF THE INVENTION
The present invention provides a composite structure comprising a
region of semiconductor switching material and a region of
electroluminescent material disposed between a pair of electrodes.
In one embodiment of the invention the switching material and the
electroluminescent material is placed in parallel between the pair
of electrodes at least one of which is transparent. Also in this
embodiment a control impedance which may be a resistor or capacitor
is placed in series with this composite structure. A low impedance
source of AC voltage is applied across the electrodes and when the
applied voltage reaches the threshold level of the bistable
switching element it changes its conductive state permitting
current to flow through the electroluminescent element. The change
in current flow through the electroluminescent element will alter
the amount of light emitted by it. In a second embodiment of the
invention the bistable semiconductor switching material and the
electroluminescent material are in series between the pair of
electrodes. Alternately, in either embodiment the control impedance
may be a resistive layer overlying the electrode. The composite
electroluminescent structures are formed into a panel array and
addressing circuits are provided to select either simultaneously or
individually desired crosspoints on the panel. Thereby, an image or
other visual data is displayed on the panel.
These and further objects of the present invention will be more
fully understood by reference to the description which follows and
the accompanying drawings wherein:
FIG. 1a shows the gross features of the I-V curve for the bistable
switching element,
FIG. 1b is a schematic sectional view of one embodiment of the
invention showing the control impedance in series with the
composite structure of the bistable semiconductor switching
material in parallel with the electroluminescent material placed
between the electrodes,
FIG. 1c is a view similar to FIG. 1b showing a resistive layer
overlying one of the electrodes;
FIG. 1d is cross sectional view of the electroluminescent device
showing a capacitive impedance,
FIG. 2 is a schematic sectional view showing the bistable
semiconductor switching material in series with the
electroluminescent material situated between the electrodes,
FIG. 3 a schematic sectional view showing the bistable
semiconductor switching material and the electroluminescent
material dispersed heterogeneously between the electrodes, and
FIG. 4 is a simplified schematic plan view of a section of the
electroluminescent panel showing the wiring used to address the
panel.
Referring to the drawing wherein like reference numerals designate
the same elements throughout the several views, there is shown in
FIG. 1b a composite matrix element structure comprising a first
transparent electrode 14 and a second electrode 17 which may be of
transparent or opaque material. Disposed between electrodes 14 and
17 and in electrical relation therewith is a region of bistable
semiconductor switching material 13 mixed in an epoxy binder
material 15 and a region of electroluminescent material 12 in
parallel with the switching material. Electrode 17 is connected to
ground through a control impedance Z.sub.f 11. Electrode 14 is
connected to a low impedance AC source 10 by a wire 16.
FIG. 1c is essentially the same as FIG. 1b except that in lieu of
control resistor 11 a layer of resistive material 18 overlays
electrode 17. Moreover, a capacitor may be substituted in lieu of a
resistor as shown in FIG. 1d. In such event the capacitor would
present a very low impedance to RF current and would allow more
current to flow through the switching and electroluminescent
material.
FIG. 1a depicts the gross features for the AC current-voltage I-V
characteristics of a bistable memory element which for the purposes
of illustration may consist of CuO powder in an epoxy binder. After
fabrication the device is in its high resistance or blocking state
R.sub.b, for voltages less than a threshold value V.sub.th. The
sample current in trace (a ) increases monotonically with applied
voltage. The details of I-V are dependent on the device material
and the mode of operation AC or DC. When the voltage exceeds a
threshold value which is typically between 10-30 volts for an
approximately 40 microns thick switching material sample, the
device makes a transition to a conducting state shown in trace (b
). The element remains in this conducting state even though the
applied voltage is reduced or removed for periods of at least
months unless specifically driven back to the high resistance
state. The element makes a transition from a high resistance state
10.sup.9 .gtoreq. megohms) to a low resistance state (approximately
1 to 10.sup.3 ohms) in times on the order of microseconds when
subjected to the threshold voltage. The high resistance state may
be recalled by subjecting the element to a sufficiently high AC or
DC current, radiation from a RF discharge, or to RF current through
the element. Where variable resistance switching material is
utilized, the I-V curve will show several resistance traces between
traces (a ) and (b). The resistance states from high to low and the
resistance states in between are described in greater detail in
copending application, Ser. No. 879,061, filed Nov. 24, 1969 and
assigned to the same assignee as the instant application.
The transparent electrode 14 may comprise thin layers of tin oxide,
copper iodide or gold alone or on a transparent substrate. The
opaque electrode may be made of any good electrically conductive
material such as copper, silver, brass, platinum or steel alloys.
For the electroluminescent material zinc sulfide or a mixture of
copper chloride and magnesium activated zinc sulfide in a binder
may be used. However, any of the well known electroluminescent
phosphors may be utilized and tailored to furnish the desired
response and spectral output. For the semiconductor switching
material amorphous or polycrystalline ZnO:Zn, ZnO:Zn+ZnO or ZnO
powders suspended in a binder such as an epoxy can be employed.
Other suitable oxides include cupric oxide, cuprous oxide, ferric
oxide, lead dioxide, manganese dioxide, mercuric oxide and aluminum
oxide.
The reduced zinc oxide (ZnO:Zn) used in the switching element is a
well known phosphor and is obtainable commercially. Moreover, the
zinc oxides are variable resistance devices and provide a gray
scale in the intensity of the electroluminescent material with
which it is in parallel. Reducing the percentage of excess zinc in
the switching element by mixing the ZnO:Zn with unreduced powders
yields devices which perform satisfactorily as switching and memory
elements. Zinc oxide with no deliberate reduction also performs
satisfactorily. However, the unreduced material does not appear to
work as well as a variable resistance device in some instances as
the reduced material. The minimum amount of excess zinc for
improved behavior may in fact be made available locally in a pure
ZnO device by thermal or electronic processes during the initial
forming of the device. Therefore, further devices made from pure
ZnO may produce devices that work as well as ZnO:Zn systems.
The preparation of the zinc and the other modified oxides follow
conventional procedures as generally given in U.S. Pat. No.
2,887,632 to Dalton. Specifically the variable resistance zinc
oxides are fabricated by firing zinc oxide with small amounts of
zinc and aluminum formates in a vacuum for five minutes at
700.degree. C. The ratios by weight are 60 gms. ZnO to 0.3 gm.
aluminum formate and 60 gms. zinc formate. These procedures reduce
the resistivity of the ZnO powders used about one order of
magnitude. While the reason why the modified oxide has a reduced
resistance is not fully understood, it is believed that in firing,
the various mixtures of the metallo-organic compounds like zinc
formate and aluminum formate decompose into a pure metal which
becomes part of the oxide crystal lattice and a volatile organic
compound. Modified CuO and A1.sub.2 O.sub.3 were made by adding 10
percent by weight of the above formates to the oxides and firing as
stated above.
The active materials used and their characteristic resistivity are
shown in Table I.
TABLE I
Material Vol. Resistivity
__________________________________________________________________________
ZnO:ZN (p-15 phosphor) 7.5 .times. 10.sup.9 ohm-cm Zinc Oxide 7.5
.times. 10.sup.9 ohm-cm Zinc Oxide fired with Aluminum formate as
described previously 4.4 .times. 10.sup.8 ohm-cm Zinc Oxide fired
with Zinc formate 1.1 .times. 10.sup.9 ohm-cm High Conductivity
Zinc Oxide 6 .times. 10.sup.5 ohm-cm Cupric Oxide 6.5 .times.
.sup.5 ohm-cm Cupric Oxide fired with 10 % by weight Aluminum
formate 8.8 .times.0 .sup.8 ohm-cm Cupric oxide fried with 10 % by
weight copper 4.8 .times. 10.sup.7 ohm-cm Cuprous oxide 7.2 .times.
10.sup.11 ohm-cm Ferric Oxide 3.6 .times. 10.sup.9 ohm-cm Lead
Dioxide 8 .times. 10.sup.3 ohm-cm Manganese Dioxide 1 .times.
10.sup.5 ohm-cm Al.sub.2 O.sub.3 2.5 .times. 10.sup.11 ohm-cm
Al.sub.2 O.sub.3 with 10 % by weight Aluminum formate 3.8 .times.
10.sup.8 ohm-cm Mercuric Oxide 9 .times. 10.sup.7 ohm-cm
__________________________________________________________________________
The following comments are to be made about Table I.
1. All samples are powder samples with varying powder size which
may account for some of the unusual resistivities observed, e.g.,
.rho.CuO<.rho.Cu.sub.20. The powders used are U. S. P. grade J.
T. Baker Chemicals unless otherwise noted. 2. The technique used
for the resistivity measurement is essentially that outlined by the
American Society for Testing and Materials (A.S.T.M.) for
determining the electrical resistance of insulating materials. 3.
Material modifications made by firing oxides with metal formates
were particularly helpful in the zinc oxide-aluminum formate
system. 4. A wide variety of metal oxides are observed to display
variable resistance behavior. The differences observed were mainly
found in the formation of the variable resistance state and the
ease with which the highest variable resistance state could be
recalled. If a best characteristic resistivity could be extracted
from Table I, one would have to choose approximately 10.sub.9
-10.sup.10 ohm-cm.
The type of binders used and the percent (by weight) of the active
powders in the binder successfully used thus far are given in Table
II. These results are for the ZnO:Zn system and a fixed electrode
material.
TABLE II
Binder Material (% wt.) Loading of ZnO:ZN (% wt.)
__________________________________________________________________________
60% Seezak* Epoxy SR 100+SC 301 40% ZnO:Zn 80% Plio Bond* cement
20% ZnO:Zn 70% Seezak SA 593 Adhesive 30% ZnO:Zn 98% Ciba* Araldite
Epoxy 2% ZnO:Zn 95% Ciba Araldite Epoxy 5% ZnO:Zn 90% Ciba Araldite
Epoxy 10% ZnO:Zn 60% Ciba Araldite Epoxy 40% ZnO:Zn 50% Ciba
Araldite Epoxy 50% ZnO:Zn 60% Ciba Araldite Epoxy 40% ZnO 50% Ciba
Araldite Epoxy 50% ZnO:+50% ZnO:Zn
__________________________________________________________________________
The percentages given above are meant only to be indicative of the
successful range of loading densities and are not meant to limit
this disclosure.
Some of the electrical properties of the binders used are presented
in Table III. ##SPC1##
It is to be expected from the above results of Table III that an
even wider variety of binder materials (rubber based cements,
epoxys, and plastics) might be used. The primary criteria being
high breakdown strength and high resistivity. In choosing an
appropriate binder, and percent mixture of active powder, such
parameters as pot life of binder, consistency of mix (very thick or
heavily loaded mixtures are more difficult to spread), mechanical
stability, and the thermal and moisture resistance properties of
the composite sample must also be given consideration. The
powder-binder mix may be prepared in any way that will provide a
reasonably uniform mixture.
Although probably desirable, extreme uniformity of mix may not be
necessary since wide variation in loading densities are acceptable,
noting Table II. If the mixture is thick the spreading of the film
with a doctor's blade, spatula or similar spreading device provides
adequate films. If the mixture is thin (or deliberately thinned
with a binder solvent) the switching layer may be painted, sprayed
or precipitated on to a base electrode. The counter electrode may
then be placed atop the wet mixture or painted or sprayed on where
the active portion of the device has been allowed to cure. The
techniques described have obvious advantage for making large area
devices or matrices of devices at room temperature without the need
for special environmental chambers.
Though no completely verified theory of operation of the memory
element has been found, empirical observations provide some
possible explanation of the behavior of the memory element. The
initial rapid switching to the low resistance state is thought to
correspond to the formation of a permanent filamental conduction
path by thermal or electronic processes resulting from high local
diversities in the sample during an electrical breakdown process.
This conduction path may be formed from a local reduction of the
metal oxide to a metallic filament, the transport of electrode
material through a gap in the bulk material (the hole or gap
priginating during fabrication of the device or by catastrophic
electronic breakdown of the device material) or by a combination of
the two aforementioned processes.
While this operational description has not been definitely
established it is consistent with the observation of a zero bias
memory. In addition, such a filamental conduction mechanism is
consistent with the means by which we can recall the high
resistance state. A large current density perhaps explains the
complete or partial rupture of fine conducting filaments. Finally,
microscopic examination reveals the presence of local regions of
structural change in the elements which have been switched to a low
resistance state. It is believed that breakdown and filament
formation is initiated by any means by which a large current
increase can occur through an initially high resistance material
such as by thermal, electronic or optical excitation of carriers
from the intrinsic bulk material, traps therein or adjacent
electrodes.
The operation of the devices of FIGS. 1b and 1c is identical. If
the impedance of the composite switch Z.sub.ELS is such that the
composite structure impedance, is greater than Z.sub.f, Z.sub.F,
(i.e. Z.sub.ELS>> Z.sub.f), the voltage V from the low
impedance source will be distributed primarily across the composite
structure and as the voltage V is increased the electroluminescent
element will luminesce. If, however, the voltage across the
composite structure V.sub.ELS is greater than the threshold voltage
V.sub.th, the bistable switching material will go to a low
resistance state and Z.sub.ELS .ltoreq.Z.sub.f. In this condition
the voltage across the composite structure is much lower than when
V.ltoreq.V.sub.th and the electroluminescent material, (EL) will
register an "off" or much more weakly luminescing state. The
restrictions on Z.sub.EL and Z.sub.f are that Z.sub.ELS
>>Z.sub.f in the blocking state and Z.sub.ELS .ltoreq.Z.sub.f
in the conducting state. The high impedance state of the device may
be recalled by pulsing the switching material with an AC or DC
voltage or by subjecting the switching material to a source of
radiation such as a tesla coil.
Experience has shown that for the voltages employed in activating
the electroluminescent material EL a series impedance, Z.sub.f
.apprxeq.4 K ohm is sufficient to limit the current through the
switch to a level which will prevent the sample from reverting to
its blocking state after switching. Thus, we need only restrict the
composite structure impedance to Z.sub.ELS >>4 K ohm in the
blocking state and Z.sub.ELS .ltoreq.4 K ohm in the conducting
state. It is understood that the value of the control impedance
Z.sub.f given above is only meant to be indicative and by no means
restrictive since the optimum value will be dictated ultimately by
the details of the device construction.
The above operation is to be contrasted with the composite switch
and electroluminescent structure in a series configuration as shown
in FIG. 2. Part 14 is a transparent electrode and part 12 is the
electroluminescent material. A conducting film 19 is placed between
the switching material 13 and the electroluminescent material.
Electrode 17 contacts the other side of the switching material and
is connected through control impedance 11 to ground. Transparent
electrode 14 is connected to potential source 10 by wire 16 thus,
completing the series circuit of the switching and
electroluminescent elements. It should be noted that conductive
film 19 is added to provide a greater area of conductive material
between the switching and electroluminescent elements. However,
satisfactory performance of the memory device is not limited to its
utilization.
In operation of FIG. 2 the electroluminescent element is held in an
"off" condition by the switching element which has a blocking
impedance Z.sub.S greater than the electroluminescent impedance
Z.sub.EL . In other words Z.sub.S >>Z.sub.EL. As a result,
the voltage across the electroluminescent element is less than the
voltage across the switching element or V.sub.EL <<V.sub.S as
long as V.sub.S >V.sub.th. When V.sub.S >V.sub.th the
switching element reverts to a low resistance state and the
electroluminescent element luminesces.
Where the switching material is of the variable resistance type the
brightness of the luminescence may be varied by altering the
resistance of the switching material. The Z.sub.S >>Z.sub.EL
requirement for the series configuration in the "off" condition
calls for a blocking state Z.sub.S .apprxeq.10.sup.9 ohms, a much
more stringent requirement than the Z.sub.ELS >>Z.sub.F
required in the parallel configuration.
Among the advantages of the parallel configuration is the fact that
the controlling elements are permitted to have a much lower value
of impedance in the blocking state than would be permissible with
the series configuration. This allows a much broader range of
switching materials to be used. In fact even switches with Z.sub.S
in the blocking state .ltoreq.Z.sub.EL will be acceptable.
Referring now to FIG. 3, a heterogeneous mixture of switching
material with an electroluminescent powder in an epoxy binder is
shown. The parts are arranged essentially the same as shown in FIG.
1b. This configuration is especially advantageous in that the
entire active elements of switching material plus
electroluminescent material may be fabricated in a single spraying
procedure. Moreover, this configuration provides the desirable
features of yielding positive or negative images depending on the
sense of the coincident pulses. That is, the background areas may
be made brighter than the image areas or vice-versa.
FIG. 4 is a plan view of an array of a plurality composite
electroluminescent structures one of which is designated a. One
electrode of each composite structure is connected to an X terminal
and the other electrode is connected to a Y terminal. The whole
array of composite structures may be mounted on a support 42 which
may be made of a nonconductive material. For purposes of
explanation we may assume that the electrodes connected to the Y
terminals are the transparent electrodes so that the panel may be
viewed from this side. It is evident however, that the position of
the transparent electrodes could be placed in the reverse manner.
Moreover, certain applications of the invention may utilize
transparent electrodes on both sides of the panel providing
positive and negative visual data. Depending upon circuit design
requirements the composite switching and electroluminescent device
may be of the series or parallel type described above. Since the
composite structures may be fabricated in small sizes resolution
can be easily controlled.
Switch S.sub.1 connects a source of AC potential 40 to the X
terminals while switch S.sub.2 connects the Y terminals to ground
through a control impedance 41. Although switches s.sub.1 and
s.sub.2 are shown as mechanical devices, the invention is not
intended to be limited thereto. It will occur to those skilled in
the art that electronic devices such as vacuum tubes or transistors
could be substituted in lieu thereof. Moreover, in computer or
communications applications, logic circuits may be used to address
the panel in order to process numerous types of input data. It is
therefore within the scope of the invention to employ electronic
switching and logic processing circuits where it is desired.
In operation of FIG. 4 it shall be assumed that the crosspoint
x.sub.2, y.sub.2 is to be addressed and that the composite
structures are a series combination of the bistable switching and
electroluminescent elements. When switches S.sub.1 closes at
terminal X.sub.2 and switches S.sub.2 closes at terminal Y.sub.2,
the composite structure at this crosspoint will become actuated
provided the applied voltage is above the threshold value of the
switching material. Under these conditions the electroluminescent
material will luminesce because the bistable switching material is
now in its conducting state permitting current flow between the
terminals. Now when switch S.sub.1 moves off terminal X.sub.2 the
composite structure ceases luminescing. However, the bistable
switching material presently in its conducting state remembers this
condition. In order to return the bistable switching material to
its former blocking state a large current may be sent through it or
it may be subjected to radiation from an available radiation
source. Sensing means may also be provided to ascertain the
conductive state of any composite structure. Thus, a computer is
relieved of the need for large storage equipment where the panel is
used in conjunction therewith.
It is understood that FIG. 4 represents only a segment of panel
array. In an actual array the composite structures and terminals
would be far more numerous giving access to more panel coordinates.
In an actual display panel numerous terminals could be addressed or
scanned sequentially or simultaneously so as to build up visual
data on the panel. The voltage to individual address terminals may
also be modulated to control the brightness of the panel and to
furnish degrees of contrast of visual data by varying the
resistance state of the variable switching material.
From the foregoing, a panel display having memory capability has
been disclosed.
* * * * *