U.S. patent number 3,636,397 [Application Number 04/815,047] was granted by the patent office on 1972-01-18 for single-crystal silicon carbide display device.
This patent grant is currently assigned to General Electric Company. Invention is credited to Arrigo Addamiano, Ronald J. Perusek.
United States Patent |
3,636,397 |
Addamiano , et al. |
January 18, 1972 |
SINGLE-CRYSTAL SILICON CARBIDE DISPLAY DEVICE
Abstract
The display device is a wafer of N-type silicon carbide having
lines or segments of lines scribed into one face in a selected
design such as an alpha-numeric or a grid of closely spaced dots.
After scribing, the wafer is diffused with P-type dopants such as
boron and aluminum. Contact to the P-type material within the
scribed lines is made by vacuum evaporation of copper-silver. The
wafer faces are then lapped to remove the metallizing and P-type
layer except within the scribed lines. A connection is then made to
the N-type material, and individual connections to each P-type
scribed-line segment. By selective energization of line segments,
various luminous letters, numerals or characters may be formed
which are seen through the N-type material.
Inventors: |
Addamiano; Arrigo (Willoughby,
OH), Perusek; Ronald J. (Chardon, OH) |
Assignee: |
General Electric Company
(N/A)
|
Family
ID: |
27103593 |
Appl.
No.: |
04/815,047 |
Filed: |
April 10, 1969 |
Current U.S.
Class: |
313/500; 257/77;
257/622; 257/E29.104; 257/92; 438/42; 438/542; 438/34 |
Current CPC
Class: |
H01L
27/00 (20130101); H01L 29/1608 (20130101); H01L
33/343 (20130101); H01L 21/00 (20130101); H01L
2224/48465 (20130101); Y10S 438/931 (20130101); H01L
2924/3025 (20130101); H01L 2224/45144 (20130101); Y10S
148/148 (20130101); H01L 2924/3025 (20130101); H01L
2224/48465 (20130101); H01L 2224/45144 (20130101); Y10S
148/107 (20130101); H01L 2224/48091 (20130101); H01L
2224/48091 (20130101); H01L 2924/00 (20130101); H01L
2224/48091 (20130101); H01L 2924/00014 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101) |
Current International
Class: |
H01L
27/00 (20060101); H01L 29/02 (20060101); H01L
21/00 (20060101); H01L 29/24 (20060101); H01L
33/00 (20060101); H05b 033/16 (); H01k
007/04 () |
Field of
Search: |
;313/108,109.5 ;317/235
;250/217SS,211S ;29/580,583,589 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Kominski; John
Assistant Examiner: O'Reilly; David
Parent Case Text
CROSS-REFERENCES TO RELATED APPLICATIONS
Copending application Ser. No. 732,442, filed May 27, 1968 by
Arrigo Addamiano, entitled "Formation of Junctions in Silicon
Carbide by Selective Diffusion of Dopants" and similarly
assigned.
Copending application Ser. No. 685,447, filed Nov. 24, 1967, now
U.S. Pat. No. 3,458,779, by John M. Blank and Ralph M. Potter,
entitled "Silicon Carbide Light-Emitting Diodes" and similarly
assigned.
Claims
What we claim as new and desire to secure by Letters Patent of the
United States is:
1. A single-crystal display device comprising a wafer of N-type
silicon carbide, grooves scribed in a face of the wafer forming
line segments adapted to create intelligence-conveying patterns,
P-type dopant diffused into the wafer from the groove surfaces and
forming P-type material along the grooves, contact metal deposited
in said grooves and attached to the P-type material, a connection
to exposed N-type material and individual connections to the
contact metal attached to the P-type material within line
segments.
2. A display device as in claim 1 wherein the grooves are disposed
as framing, cross and diagonal lines to form an alpha-numeric
indicator.
3. A display device as in claim 1 wherein the grooves are disposed
in parallel and closely spaced, and cross grooves break up the
original grooves into segments to form a grid indicator of closely
spaced luminous spots.
4. A display device as in claim 1 wherein the P-type dopant
comprises boron and aluminum.
5. A display device as in claim 1 wherein the contact metal
deposited in the grooves comprises copper and silver.
6. The method of making a single-crystal display device which
comprises obtaining a wafer of N-type silicon carbide, scribing one
face of the wafer with grooves forming lines disposed to create
intelligence-conveying patterns, diffusing a P-type dopant into
said wafer, said grooves penetrating into said wafer a depth
exceeding the diffusion depth of said P-type dopant, vacuum
evaporating contact metal onto said P-type material, removing the
contact metal and the P-type material from the face of the wafer
except within the scribed grooves, and making a connection to the
exposed N-type material and individual connections to the metal
contacting the P-type material within the grooves.
7. The method of claim 6 wherein portions of the grooves are masked
prior to dopant diffusion and contact metal evaporation in order to
have line segments formed by the unmasked portions, and individual
connections are made to the line segments.
8. The method of claim 6 wherein said one face is scribed with
cross grooves after dopant diffusion and contact metal evaporation
in order to break up the original grooves into segments, and
individual connections are made to the groove segments.
Description
BACKGROUND OF THE INVENTION
The invention relates to solid-state subminiature display apparatus
utilizing light-emitting junctions in silicon carbide.
Light-emitting diodes or solid-state lamps of silicon carbide
comprise a junction between n-type material which may be nitrogen
doped and p-type material which may be boron and/or aluminum doped.
When the device is suitably energized by the application of a
forward potential across the junction, light is generated by the
recombination of charge carriers in close proximity to the
junction. In commercially available solid-state indicator lamps, a
crystal chip containing a PN-junction is mounted P-side down on a
header and light is emitted through the N-type top side which is
contacted by a fine wire.
Solid-state visual display apparatus may be used for displaying
symbols including alphabet letters, numerals and symbols of various
kinds. Such apparatus is particularly useful in high-speed
photographic recording because the response is substantially
instantaneous. In copending application No. 732,442, filed May 27,
1968 by one of us (Arrigo Addamiano), entitled "Formation of
Junctions in Silicon Carbide by Selective Diffusion of Dopants," a
method of creating lighting patterns in a single crystal of silicon
carbide is disclosed which comprises diffusion of dopants into
selected zones of the crystal. At the same time diffusion of
dopants into other zones is prevented by covering or shielding such
other zones by a refractory nonporous material, suitably fragments
of silicon carbide crystals.
Among the objects of the invention are to provide improved
solid-state display apparatus in which the selected designs are
clearer and more legible and wherein more information may be
conveyed within a given size, and to provide an improved process
and technique for creating selected lighting designs in a silicon
carbide wafer.
SUMMARY OF THE INVENTION
The invention provides a solid-state display device consisting of a
wafer of N-type silicon carbide having lines or segments of lines
scribed into one face and forming a selected design such as an
alpha-numeric or a grid of closely spaced dots. The lines are
shallow grooves or V-cuts which may be made by a diamond saw. After
scribing, the wafer is diffused with P-type dopants such as boron
and aluminum. Contact to the P-type material within the grooves is
made by vacuum evaporation of suitable metals such as copper and
silver. In order to have individual lighting control of the various
grooves or portions of grooves, masking of portions is done prior
to the metallizing by vacuum evaporation. An alternative technique
suitable for making a grid of closely spaced dots is to cross
groove after metallizing. The wafer faces are then lapped to remove
the metallizing and P-type layer except in the grooves or V-cuts.
Individual connections to each P-type groove segment are then made
and a single connection is also made to the N-type material. The
luminous design is seen by looking at the grooves through the
N-type wafer.
DESCRIPTION OF DRAWING
FIG. 1a shows a silicon carbide crystal ground flat and FIG. 1b
shows a rectangular wafer cut therefrom.
FIG. 2 illustrates a diamond saw scribing a line into a wafer.
FIG. 3 shows a silicon carbide wafer having an alpha-numeric
scribed into one face.
FIG. 4 is a cross section through a scribed line on a wafer after
P-type diffusion and metal deposition.
FIG. 5 shows the same cross section as FIG. 4 after lapping and
attachment of a wire lead.
FIG. 6 is a pictorial view of an alpha-numeric SiC indicator.
FIGS. 7a, b, c and d show successive stages in making an SiC grid
indicator .
DETAILED DESCRIPTION
The starting material to prepare a single crystal alpha-numeric
indicator may be a platelet of green, nitrogen-doped SiC. A typical
platelet 1 is well formed as a hexagon on five sides; it is ground
flat and polished with a metal-bonded diamond lap to achieve plane
surfaces perpendicular to the c axis as shown in FIG. 1a; by way of
example, the platelet may be as much as 15 millimeters across and
about 0.5 millimeter thick after grinding and polishing. It may be
desirable to cut the platelet to some standard size such as a
5.times. 10-mm. wafer as illustrated at 2 in FIG. 1b and this may
be done using a diamond saw.
An alpha-numeric indicator 3 is illustrated in FIG. 3 wherein the
pattern consists of rectangular framing lines 4, crosslines 5, and
diagonal lines 6. Lines or V-grooves are cut or scribed into the
face of the wafer by cementing it to a suitable support 7 and
running a diamond saw across the upper face to create the pattern,
as shown in FIG. 2. The diamond saw may consist of a phosphor
bronze disc 8 having a thin knife edge impregnated with diamond
dust. The width of the luminous lines may be increased by making
the cuts deeper and this also increases the visibility of the
indicator, but of course the cuts or grooves cannot exceed in depth
the thickness of the wafer. Where a fine line indicating device is
desired or where a grid pattern of many closely spaced dots is
desired, the depth of the cuts may be reduced and this permits the
lines to be placed closer together.
After the selected design has been scribed into the wafer, P-type
dopants, preferably boron and aluminum, are diffused into it. This
may be done by placing the wafer within a double-walled graphite
crucible of which the outer vessel wall consists of dense graphite
while the inner vessel wall is made of porous graphite or carbon.
The wafer is placed within the inner vessel and a protective charge
of silicon and carbon with which are admixed the boron and aluminum
dopants is located in the intramural cavity between outer and inner
walls. By way of example, suitable proportions for the protective
charge are silicon and carbon in equal molar proportions plus 0.1
atom percent A1 and 0.1 mole percent H.sub.3 BO.sub.3. The crucible
is placed within a carbon tube furnace which is located within a
vacuum chamber. Reference may be made to copending application Ser.
No. 685,447, filed Nov. 24, 1967, now U.S. Pat. No. 3,458,779, by
John M. Blank and Ralph M. Potter for more details regarding
diffusion of dopants and suitable furnace equipment for so doing.
Diffusion may take place at a temperature of about 2,000.degree. C.
and results in a P-type surface layer, from 0.1 to 10 microns thick
depending upon diffusion time and temperature. P-type layers are
formed on both faces of the wafer and extend into the SiC from the
grooves; the layers are shown by stippling at 11 and 12 in FIG.
4.
In an alpha-numeric indicator, each half of a framing, cross and
diagonal line of the pattern must be separately controllable to
form all the characters desired. This requires that each half-line
or segment be insulated and this may be accomplished by suitable
masking. A dot of silicon carbide paint consisting of fine grit SiC
dispersed in mineral oil is applied to the midpoint and to the ends
of each of the lines or V-cuts, as indicated by stippling at 13 in
FIG. 3. The wafer is then placed on a graphite resistance heater
strip in a bell jar which is evacuated. The heater strip is heated
by passing current through it to approximately 500.degree. C. for
10 minutes to eliminate the oil, leaving only the SiC fine grit in
place as a mask. Contact to the P-type side is now made by vacuum
evaporation of suitable metals, for instance aluminum-silicon
alloy, preferably close to the eutectic composition, or
nickel-chromium or copper and silver. The entire upper surface of
the wafer carrying the pattern becomes metallized as shown at 14 in
FIG. 4. Both faces of the wafer are then ground and polished to
remove the metallizing and P-type layer from all areas except
within the grooves. At this stage the SiC fine grit is also removed
by the polishing and this results in a discontinuity in the
metallizing within the grooves at the places where the dots of SiC
grit were applied.
Individual connections to each P-type groove or line segment may be
made by attaching wires 15 to the metallized contact layer within
the groove. The wires may be attached by soldering or by
thermocompression bonding when fine gold wires are used. An ohmic
contact is also made to the N-type material using suitable N-type
contacting material such as silicon-phosphorus or gold-tantalum
alloy. The N-type material has good conductivity and a single small
area contact to it suffices to which a wire may be attached, as
indicated at 16 in FIG. 5.
Upon applying a few volts in the forward direction across the
contacts (positive to P-side and negative to N-side), the line
segments light up and are seen by looking down upon them from the
opposite side through the thickness of the wafer, as in FIG. 6. The
letters and numbers which can be formed by selective energization
of the segments can readily be seen in a normally illuminated room.
By choosing different types of SiC crystals and different dopants,
displays of various colors can be obtained, for instance green,
yellow, orange and red.
FIGS. 7a to d illustrate successive stages in making a solid-state
indicator consisting of a grid of closely spaced dots or luminous
spots subject to individual control. Referring to FIG. 7a, there is
shown an N-type silicon carbide wafer 22 having relatively shallow
closely spaced lines or V-grooves 23 cut or scribed in the top
face. The scribed wafer is next subject to diffusion of P-type
dopants creating top and bottom P-type layers 24,25, and thereafter
to vacuum evaporation of copper and silver to provide a contact
layer 26 on the top face, as shown in FIG. 7b. The top face is next
cross grooved by cuts 27 running at right angles to the original
V-cuts, as shown in FIG. 7c. The wafer is then flat ground on the
top face to remove both metallizing and P-type layers except within
the grooves, and is also ground on the bottom face to remove the
P-type layer, as shown in FIG. 7d. This restores the bottom face to
N-type and leaves the P-type material in the groove segments only
on the top face. Each groove is broken up into isolated segments,
each short segment being a small P-type area or dot backed up by a
metallizing layer of copper and silver. Individual connections to
each P-type dot may now be made, either by using a contactor with
conductors spatially arranged to contact the metallized segments of
the wafer, or alternatively by thermocompression bonding fine gold
wires to the metallized dots. Upon energization, a luminous pattern
is created which is seen by looking at the dots through the
thickness of the N-type material. By selective energization of the
various dots, moving patterns may be created to convey
information.
* * * * *