U.S. patent number 3,555,332 [Application Number 04/678,024] was granted by the patent office on 1971-01-12 for apparatus for producing a high energy beam of selected metallic ions.
This patent grant is currently assigned to The Perkin-Elmer Corporation. Invention is credited to Henry D. Dieselman, John B. Schroeder.
United States Patent |
3,555,332 |
Schroeder , et al. |
January 12, 1971 |
APPARATUS FOR PRODUCING A HIGH ENERGY BEAM OF SELECTED METALLIC
IONS
Abstract
A technique for producing a high energy beam of ions of a
selected metal without having the selected metal initially in
gaseous form and the application of the technique to treating solid
bodies of material. An inert gas is ionized in the source chamber
section of an accelerator. The exit channel section of the
accelerator is made from a material which includes the preselected
metal. A deflecting magnet is positioned along the path of the ion
beam emerging from the accelerator. Included in the emerging beam
are ions of the inert gas and ions of the preselected metal used in
the exit channel. All ions except either those of the inert gas or
those of the preselected metal are selectively discarded by
regulating the current of the deflecting magnet. The undiscarded
ions remaining in the beam are used to treat the solid body of
material.
Inventors: |
Schroeder; John B. (Weston,
CT), Dieselman; Henry D. (Norwalk, CT) |
Assignee: |
The Perkin-Elmer Corporation
(Norwalk, CT)
|
Family
ID: |
24721075 |
Appl.
No.: |
04/678,024 |
Filed: |
October 25, 1967 |
Current U.S.
Class: |
250/295; 250/298;
250/492.3; 438/514; 250/492.1 |
Current CPC
Class: |
H01J
27/18 (20130101); H01J 37/3171 (20130101) |
Current International
Class: |
H01J
37/317 (20060101); H01J 27/16 (20060101); H01J
27/18 (20060101); H05h 001/02 (); H01j
037/26 () |
Field of
Search: |
;313/63
;250/41.3,41.9,49.5(O) ;378/233,234,235 ;148/1.5 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
ma guire, T.; "Ion Implants Forge Tailor-Made Junctions",
Electronics, April 19, 1963, pp 26,27,29.
|
Primary Examiner: Lake; Roy
Assistant Examiner: O'Reilly; David
Claims
We claim:
1. Apparatus for treating solid materials with energetic ions of a
predetermined metal comprising:
an accelerator having a source chamber adapted to be filled with a
gaseous material, said chamber having an exit channel made of a
material including said predetermined metal;
actuating means to ionize said gaseous material whereby there is
produced a high energy beam of charged particles passing out of
said source chamber and including ions of said predetermined metal
from the exit channel;
deflecting means adjacent the path of said beam to separate the
ions of said predetermined metal from the other particles in said
beam;
an evacuated chamber connected to the accelerator for receiving the
beam of ions of said predetermined metal; and
support means disposed in the evacuated chamber in the path of said
beam for holding the solid material whereby ions of said
predetermined metal from said exit channel impinge upon said
material.
Description
This invention relates to ion beams. More particularly, this
invention relates to a technique for producing high energy beams of
metallic ions and the use of such beams in the treatment of solid
bodies of materials, especially semiconductor materials.
An ion beam is essentially a beam of charged particles, other than
electrons, all moving with substantially the same speed in a nearly
common direction. Ion beams have been produced for some time now
using devices known as accelerators. Ions are normally created in
an accelerator by applying electrical energy to a selected gaseous
material causing it to become ionized. In one form of accelerator,
the ions so generated are then accelerated down a long tube where
they emerge in the form of a high velocity beam. The portion of the
accelerator in which the ions are generated is called the source
chamber and the portion of the accelerator in which the ions are
accelerated is called the accelerating column. The source is
coupled to the accelerating column through a small elongated
tubular element called the exit channel. Characteristically, the
exit channel is made of aluminum. Although the emerging beam
consists primarily of ions of the selected gas it may also contain
ions of other materials, such as trace gases present in the source
chamber and other parts of the system. However, by magnetic
selection means well known in the art, all the residual ions can be
and usually are deflected away from the beam so that the beam
contains only ions of the selected gas initially supplied to the
source chamber.
Ion beams are mainly used in the laboratory for research purposes.
More recently, however, ion beams have been used as a technique for
implanting energetic ions into various materials, such as
semiconductors, in order to alter the electrical characteristics of
the material. For example, phosphorous ions, generated by ionizing
phosgene gas, have been successfully implanted into silicon type
semiconductors. The technique does have limitations. One of these
limitations is the requirement that the material whose ions are to
be implanted must be available in gaseous form so that it can be
ionized in the source chamber. Ion beams of many materials would be
extremely useful in the treatment of semiconductors, as well as for
other purposes, but hitherto have not been produceable because the
material is not readily available in a gaseous state. Typical
examples are zinc, lead and iron.
Accordingly, it is an object of this invention to provide a
technique for producing ion beams. It is another object of this
invention to provide a technique for producing an ion beam of a
metallic material that is not readily volatile.
It is still another object of this invention to provide a technique
for producing a beam of metal ions without reducing the metal to
its gaseous form.
It is yet still another object of this invention to provide a
technique for treating solid materials with ion beams.
It is another object of this invention to provide a technique for
implanting metallic ions into solid materials.
It is still another object of this invention to provide a technique
for implanting zinc ions into a gallium arsenide substrate.
The above and other objects are achieved according to this
invention which is based on a discovery of appreciable ion currents
in the output beam of an accelerator at mass-energy ratios
corresponding to the material used in the fabrication of the exit
channel. Hitherto, this phenomena was not realized. It is believed
that these ions are created by sputtering of the exit channel. By
simply adjusting the magnetic selection means, these ions rather
than the ions of the selected gas can be retained in the beam.
Thus, it is possible to produce a beam of ions of whatever material
is used in the fabrication of the exit channel. One important
advantage of this technique is that the material from which ions
are desired need not be in gaseous form.
Accordingly, the invention involves producing an ion beam by using
an accelerator in which the exit channel is made from a metallic
material from which ions are desired. The source chamber section of
the accelerator is filled with an ionizable gas. In using the ion
beam to treat solid materials, the solid material is disposed in an
evaporating chamber which is coupled to the accelerator. By
regulating a deflection magnet located along the path of the ion
beam, ions of either the selected gas or the exit channel material
can be directed onto the solid material. The solid material is
mounted in the evaporating chamber on a rotatable holder so that
its surfaces can be positioned to receive either the ion beam or
the evaporant.
Other features and attendant advantages of the invention will
become apparent on reading the following detailed description and
when taken in conjunction with the drawings in which:
FIG. 1 is a schematic view of an apparatus constructed according to
this invention; and
FIG. 2 is a section view of a portion of the apparatus shown in
FIG. 1, taken along axis 2-2.
Referring now to the drawing, there is shown in FIG. 1 an apparatus
for practicing the invention.
The apparatus includes an accelerator 11 for producing an energetic
beam of charged particles. The accelerator 11 comprises a source
chamber 12, adapted to hold a quantity of gaseous material. The
source chamber 12 may be in the form of an elongated quartz tube
opened at one end and closed at the other end. A pair of RF
electrodes 13 and 14 are mounted on the outside of the source
chamber 12 and connected to an RF power supply (not shown) for
supplying RF energy to the source chamber 12. An internally
extending probe electrode 15 is mounted on the source chamber 12 at
the closed end and connected to a DC power source (not shown). An
electrically conductive plate member 16 is positioned at the open
end of the source chamber 12 and is also connnected to the DC power
source. The plate member 16 has a centrally located aperture. A
small tubular metallic exit channel 17 is press fit into the
central aperture of the plate member 16. The exit channel 17 is
made from material including a metal of the type from which ions
are desired. For example, if zinc ions are desired, the exit
channel is made of zinc or a compound of materials including zinc.
The plate member 16 is also provided with a passageway 18 through
which the selected gaseous material (i.e. the source gas) is
supplied to the source chamber 12. Probe electrode 15 and plate
member 16 are connected to the DC power source in such a manner
that the plate member 16 is at the higher voltage. A focusing
solenoid 19 surrounds the source chamber 12 near the exit channel
17 to increase the ion current density in the region of the exit
channel 17.
In operation, the source gas, which may be for example argon, is
ionized by the application of RF energy. Because of the potential
difference between probe electrode 15 and plate member 16 positive
ions drift to the vicinity of the plate member 16.
A rubber gasket 20 is interposed between the plate member 16 and
the source chamber 12 to provide a gastight seal between these two
members. A focusing electrode 21 is positioned next to the plate
member 16 for constraining the beam of particles passing though the
exit channel 17 into a narrow stream. The focusing electrode 21 is
also connected to the DC power source.
The accelerator 11 further includes an accelerating column 22
positioned to receive the charge particles passing through the exit
channel 17. The accelerating column 22 is made-up of a plurality of
electrically conductive sections 23 separated by electrically
insulating spacer elements 24. A base plate 25 at ground potential
is connected to the exit end of the accelerating column 22. Each of
the conductive sections 23 is connected to a separate resistive
element (not shown) which in turn is coupled to the DC power
source, in a manner well known in the art, so that there is a
uniform voltage drop from the high voltage end at the focusing
electrode 21 to the low voltage end at the base plate 25. The base
plate 25 is connected through a funnel shaped pipe section 26 to
one leg of a T joint 27. A diffusion pump system 28 for evacuating
the system is connected to another leg of the T joint 27. The third
leg of the T joint 27 is connected to an elongated transport pipe
29 which in turn is connected to a vacuum chamber 30. A quadrapole
focusing lens 31 surrounds the transport pipe 29 in order to
constrain the ion beam. Ion selection means, which may be in the
form of a deflecting magnet 32, is located in front of the vacuum
chamber 30 for deflecting away from the beam ions of materials that
are not wanted. The deflecting magnet 32 can be set, by adjusting
the current, so as to retain in the beam ions of any of the various
materials that are present in the beam. As can be seen in FIG. 2, a
pair of evaporating boats 33 and 34 are disposed on the bottom of
the vacuum chamber 30. A rotatably mounted substrate holder 35 is
also located inside the vacuum chamber 30. The substrate holder 35
is adapted to rotate about a horizontal axis and can be set at any
one of four positions so that each surface of a substrate S is
facing either in the direction of the ion beam or in a direction to
receive the evaporant from the evaporating boats 33 and 34. Thus,
once the substrate S is mounted in the substrate holder 35, it can
be treated either by ion bombardment or by evaporation.
In an actual example in which the technique of this invention was
successfully practiced, a gallium arsenide substrate doped with
tellurium was mounted on the substrate holder 35. One of the
evaporating boats 33 was filled with N-type gold and the other
evaporating boats 34 was filled with P-type lead. The source
chamber 12 was filled with argon gas. The substrate holder 35 was
set at a position in which one surface of the substrate S faced in
the direction of the ion beam. The exit channel 17 was made of
zinc. The current supplied to the deflecting magnet 32 was set so
that all ions except those of zinc would be deflected away from the
emerging beam. The accelerator 11 was turned on. After the desired
amount of zinc ions was implanted in the substrate S, the
accelerator 11 was turned off and substrate holder 35 was rotated
90.degree. so that the treated surface of the substrate S faced in
the direction of the evaporating boats. The heater to the boat 34
containing P-type lead was energized and lead evaporated onto this
surface. The heater was then turned off and the substrate holder 35
rotated 90.degree. so that the other surface of the substrate S was
in position to receive the ion beam. The current supplied to the
deflecting magnet 32 was set to deflect away from the beam all ions
except argon ions. The accelerator 12 was turned on and this
surface cleaned by bombarding it with argon ions. The accelerator
11 was then turned off and the substrate holder 35 rotated
90.degree. so that this surface faced in the direction of the
evaporating boats. The heater to the boat 33 containing gold was
then energized and gold evaporated onto this surface.
Additional features and advantages of the invention are described
in an article entitled "Implantation of Zinc Into Gallium
Arsenide," written by the inventors and appearing in the
proceedings of The IEEE, Vol. 55, NO. 1, Jan. 1967, pgs.
125--126.
Obviously, many modifications and variations of the present
invention are possible in the light of the above teachings. It is
therefore to be understood that, within the scope of the appended
claim, the invention may be practiced otherwise than as
specifically described.
* * * * *