U.S. patent number 11,373,889 [Application Number 17/102,615] was granted by the patent office on 2022-06-28 for substrate treating apparatus.
This patent grant is currently assigned to SCREEN Holdings Co., Ltd.. The grantee listed for this patent is SCREEN Holdings Co., Ltd.. Invention is credited to Masafumi Maeda.
United States Patent |
11,373,889 |
Maeda |
June 28, 2022 |
Substrate treating apparatus
Abstract
A substrate treating apparatus includes a plurality of solution
treating units for performing solution treatment of substrates, and
a plurality of individual gas supply devices provided to correspond
individually to the solution treating units, each for supplying gas
at a variable rate only to one of the solution treating units. The
solution treating units perform the solution treatment by supplying
treating solutions to the substrates. The individual gas supply
devices supply gas only to the solution treating units
corresponding thereto. The individual gas supply devices supply the
gas at adjustable rates to the solution treating units. The rate of
gas supply to the solution treating units can therefore be varied
for each solution treating unit.
Inventors: |
Maeda; Masafumi (Kyoto,
JP) |
Applicant: |
Name |
City |
State |
Country |
Type |
SCREEN Holdings Co., Ltd. |
Kyoto |
N/A |
JP |
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Assignee: |
SCREEN Holdings Co., Ltd.
(N/A)
|
Family
ID: |
1000006395061 |
Appl.
No.: |
17/102,615 |
Filed: |
November 24, 2020 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20210082721 A1 |
Mar 18, 2021 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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16203885 |
Nov 29, 2018 |
10879091 |
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15346063 |
Jan 1, 2019 |
10170349 |
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Foreign Application Priority Data
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Nov 13, 2015 [JP] |
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2015-223003 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
21/6715 (20130101); B05D 1/005 (20130101); H01L
21/67017 (20130101); H01L 21/67253 (20130101); H01L
21/6719 (20130101); G03F 7/3092 (20130101); B05C
5/0208 (20130101); G03F 7/162 (20130101); H01L
21/67742 (20130101); H01L 21/67173 (20130101); H01L
21/00 (20130101); H01L 21/67178 (20130101); B05C
15/00 (20130101) |
Current International
Class: |
H01L
21/67 (20060101); G03F 7/16 (20060101); B05D
1/00 (20060101); B05C 15/00 (20060101); H01L
21/677 (20060101); H01L 21/00 (20060101); B05C
5/02 (20060101); G03F 7/30 (20060101) |
Field of
Search: |
;118/52 ;454/187 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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06-084876 |
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Mar 1994 |
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JP |
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2003-100620 |
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Apr 2003 |
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JP |
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2003-347186 |
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Dec 2003 |
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JP |
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2006-024638 |
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Jan 2006 |
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JP |
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2006-229062 |
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Aug 2006 |
|
JP |
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2009-010291 |
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Jan 2009 |
|
JP |
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2009-135292 |
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Jun 2009 |
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JP |
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2010-087115 |
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Apr 2010 |
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JP |
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2010-087116 |
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Apr 2010 |
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JP |
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4471865 |
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Jun 2010 |
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JP |
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2012-156488 |
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Aug 2012 |
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JP |
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2013-089689 |
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May 2013 |
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JP |
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10-2009-0036695 |
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Apr 2009 |
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KR |
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10-2012-0112012 |
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Oct 2012 |
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KR |
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10-2014-0053057 |
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May 2014 |
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KR |
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201203363 |
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Jan 2012 |
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TW |
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201250914 |
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Dec 2012 |
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TW |
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201532691 |
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Sep 2015 |
|
TW |
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I508152 |
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Nov 2015 |
|
TW |
|
Other References
Office Action and Search Report dated May 18, 2017 for
corresponding Taiwan Patent Application No. 105136806. cited by
applicant .
Office Action dated Nov. 6, 2018 for corresponding Japanese Patent
Application No. 2015-223003. cited by applicant .
Office Action dated Mar. 22, 2019 for Korean Patent Application No.
10-2019-0000781. cited by applicant .
Office Action dated Mar. 29, 2019 for Taiwan Patent Application No.
107122853. cited by applicant.
|
Primary Examiner: Edwards; Laura
Attorney, Agent or Firm: Ostrolenk Faber LLP
Parent Case Text
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of U.S. patent application Ser.
No. 16/203,885, filed Nov. 29, 2018, now U.S. Pat. No. 10,879,091,
which is a continuation of U.S. patent application Ser. No.
15/346,063, filed Nov. 8, 2016, now U.S. Pat. No. 10,170,349, which
claims the benefit of Japanese Patent Application No. 2015-223003,
filed Nov. 13, 2015, the contents of which are incorporated herein
by reference.
Claims
What is claimed is:
1. A substrate treating apparatus comprising: a treating block
having: a transporting space including a first divided transporting
space and a second divided transporting space, the first divided
transporting space corresponding to an upper part of the
transporting space; the second divided transporting space
corresponding to a lower part of the transporting space; a first
main transport mechanism installed in the first divided
transporting space, and a second main transport mechanism installed
in the second divided transporting space; and a transporting space
gas supply device configured to supply gas to the transporting
space; wherein the transporting space gas supply device includes: a
supply fan installed outside the transporting space; a first supply
pipe configured to communicate the supply fan with the first
divided transporting space; and a second supply pipe configured to
communicate the supply fan with the second divided transporting
space.
2. The substrate treating apparatus according to claim 1, wherein:
the supply fan comprises a primary side thereof open to an exterior
of the substrate treating apparatus; and the supply fan is
configured to take in ambient gas from outside the substrate
treating apparatus, and send the gas into the transporting
space.
3. The substrate treating apparatus according to claim 1, wherein
the supply fan is disposed above the treating block.
4. The substrate treating apparatus according to claim 3, wherein
the supply fan is disposed above the transporting space.
5. The substrate treating apparatus according to claim 4, wherein
the supply fan is disposed on an upper surface of an upper wall of
the first divided transporting space.
6. The substrate treating apparatus according to claim 1, wherein:
the first supply pipe is connected to one side of the supply fan;
and the second supply pipe is connected to the other side of the
supply fan.
7. The substrate treating apparatus according to claim 1, wherein:
the first supply pipe extends downward from the supply fan; and the
second supply pipe extends downward from the supply fan.
8. The substrate treating apparatus according to claim 1, wherein:
the first supply pipe is provided from the outside of the
transporting space to the inside of the first divided transporting
space; and the second supply pipe is provided from the outside of
the transport space to the inside of the second divided
transporting space.
9. The substrate treating apparatus according to claim 8, wherein:
the first supply pipe penetrates an upper wall of the first divided
transporting space; and the second supply pipe penetrates the upper
wall of the first divided transporting space and passes through the
first divided transporting space.
10. The substrate treating apparatus according to claim 9, wherein
the treating block comprises: a solution treating unit provided on
one side of the transporting space; and a heat treating unit
provided on the other side of the transporting space; and wherein
the second supply pipe passes through one side of the first divided
transporting space near the solution treating unit.
11. The substrate treating apparatus according to claim 1, wherein
the transporting space gas supply device comprises: a first blowout
unit connected to the first supply pipe so as to receive the gas
from the supply fan through the first supply pipe, and configured
with openings to blow out the gas to the first divided transporting
space; and a second blowout unit connected to the second supply
pipe so as to receive the gas from the supply fan through the
second supply pipe, and configured with openings to blow out the
gas to the second divided transporting space.
12. The substrate treating apparatus according to claim 11,
wherein: the first blowout unit is installed in an upper part of
the first divided transporting space; and the second blowout unit
is installed in an upper part of the second divided transporting
space.
13. The substrate treating apparatus according to claim 12,
wherein: the supply fan is in contact with an upper surface of an
upper wall of the first divided transporting space; and the first
blowout unit is in contact with a lower surface of the upper wall
of the first divided transporting space.
14. The substrate treating apparatus according to claim 1, wherein
the transporting space gas supply device comprises a filter
installed on a primary side or a secondary side of the supply
fan.
15. The substrate treating apparatus according to claim 1, wherein
the first divided transporting space and the second divided
transporting space are separated from each other.
Description
BACKGROUND OF THE INVENTION
(1) Field of the Invention
This invention relates to a substrate treating apparatus for
treating semiconductor wafers, glass substrates for photomasks,
glass substrates for liquid crystal displays, substrates for
optical disks and so on (hereinafter called simply substrates).
(2) Description of the Related Art
Conventionally, this type of apparatus includes an apparatus having
a treating section, a gas supply device and a gas exhaust device.
The treating section has a first treating unit and a second
treating unit arranged horizontally. The gas supply device supplies
gas to the first treating unit and second treating unit together.
The gas exhaust device exhausts gas from the first treating unit
and second treating unit together.
The gas supply device has a supply damper and a supply unit. The
supply damper uniformly adjusts a rate of gas supply to the first
treating unit and second treating unit. The supply unit blows out
the gas to both the first treating unit and second treating
unit.
The gas exhaust device has an exhaust unit and an exhaust damper.
The exhaust unit exhausts gas from both the first treating unit and
second treating unit. The exhaust damper uniformly adjusts a rate
of gas exhaust from the first treating unit and second treating
unit (as disclosed in Japanese Unexamined Patent Publication No.
2010-87116 for example).
SUMMARY OF THE INVENTION
The conventional apparatus with such a construction has the
following drawbacks.
The rate of gas supply to the first treating unit and the rate of
gas supply to the second treating unit cannot be changed
individually. The rate of gas supply to the first treating unit and
the rate of gas supply to the second treating unit are always the
same. However, the timing of substrate treatment carried out by the
first treating unit and the timing of substrate treatment carried
out by the second treating unit are not necessarily the same. For
example, the first treating unit may treat substrates in a first
period, with the second treating unit treating substrates in a
second period staggered from the first period. When the first
period and the second period are staggered, it is difficult to
supply an appropriate quantity of gas to both the first treating
unit and second treating unit in a timely way. It is because the
rate of gas supply to the first treating unit and the rate of gas
supply to the second treating unit cannot be changed individually.
It is therefore difficult to improve the treatment quality of each
of the first treating unit and the second treating unit.
Similarly, the rate of gas exhaust from the first treating unit and
the rate of gas exhaust from the second treating unit cannot be
changed individually. It is therefore difficult to improve the
treatment quality of each of the first treating unit and the second
treating unit.
This invention has been made having regard to the state of the art
noted above, and its object is to provide a substrate treating
apparatus which can improve the treatment quality of each of a
plurality of treating units.
To fulfill the above object, this invention provides the following
construction.
A substrate treating apparatus, according to this invention,
comprises a plurality of solution treating units for performing
solution treatment of substrates; and a plurality of individual gas
supply devices provided to correspond individually to the solution
treating units, each for supplying gas at a variable rate only to
one of the solution treating units.
The substrate treating apparatus according to this invention has a
plurality of solution treating units and a plurality of individual
gas supply devices. One individual gas supply device is provided
for each solution treating unit. Each gas supply device is related
to one of the solution treating units. The solution treating units
perform solution treatment of substrates. The solution treatment is
a treatment carried out by supplying the substrates with a treating
solution. The individual gas supply devices supply gas only to the
solution treating units corresponding to the individual gas supply
devices. Further, the gas supply devices have an adjustable rate of
gas supply to the solution treating units corresponding to the
individual gas supply devices. Therefore, the rate of gas supply to
the solution treating units is changeable for each solution
treating unit. Consequently, an appropriate quantity of gas can be
supplied in appropriate timing to each solution treating unit.
Therefore, treatment quality in each solution treating unit can be
improved conveniently.
In the above invention, it is preferred that each of the individual
gas supply devices includes a supply adjuster for adjusting the
rate of gas supply to one of the solution treating units. The
individual gas supply devices with the supply adjusters can
conveniently adjust the rate of gas supply to the solution treating
units.
In the above invention, it is preferred that the substrate treating
apparatus further comprises distributing pipes provided to
correspond individually to solution treating unit groups each
formed of a plurality of the solution treating units arranged in a
column substantially in an up-down direction, for distributing the
gas only to a plurality of the individual gas supply devices
corresponding to each solution treating unit group. A plurality of
solution treating units arranged in a column substantially in the
up-down direction constitute one solution treating unit group. The
distributing pipes are provided individually for the solution
treating unit groups. Each distributing pipe is related to one of
the solution treating unit groups. As a result, each distributing
pipe is related to the plurality of solution treating units
belonging to one solution treating unit group, and the plurality of
individual gas supply devices that supply gas to these solution
treating units. Each distributing pipe distributes gas only to the
plurality of individual gas supply devices corresponding to the
distributing pipe. For example, each distributing pipe is connected
only to the plurality of individual gas supply devices
corresponding to the distributing pipe. The plurality of individual
gas supply devices corresponding to the same distributing pipe
supply the gas, respectively, to the plurality of solution treating
units arranged in a column substantially in the up-down direction.
Therefore, the shape, size, direction and so on of the individual
gas supply devices can easily be uniformed among the plurality of
individual gas supply devices corresponding to the same
distributing pipe. As a result, the rates of gas supply can be
prevented conveniently from interfering with one another among the
individual gas supply devices corresponding to the same
distributing pipe. For example, the rate of gas supply from part of
the individual gas supply devices can be prevented conveniently
from causing variations in the rates of gas supply from the other
individual gas supply devices. When the rate of gas supply from
part of the individual gas supply devices is changed intentionally,
for example, this change can be prevented conveniently from
inadvertently varying the rate of gas supply from the other
individual gas supply devices. Since the distributing pipe
distributes the gas to a plurality of individual gas supply
devices, the individual gas supply devices can be reduced in
size.
In the above invention, it is preferred that the plurality of
individual gas supply devices are separated from one another at
least inside the substrate treating apparatus. In other words, the
individual gas supply devices are not connected directly or
indirectly to one another at least inside the substrate treating
apparatus. According to such a construction of the individual gas
supply devices, whether the individual gas supply devices have
supply adjusters or not, the rate of gas supply to the solution
treating units can conveniently be changed for each solution
treating unit. For example, even where the individual gas supply
devices do not have supply adjusters, the rate of gas supply in the
individual gas supply devices can be adjusted for each individual
gas supply device by using external equipment. Consequently, the
rate of gas supply to the solution treating units can be changed
for each solution treating unit. The external equipment here is gas
supplying external equipment installed outside the substrate
treating apparatus for supplying the gas.
In the above invention, it is preferred that each of the individual
gas supply devices includes a supply port for connection to
external equipment installed outside the substrate treating
apparatus; and a supply pipe connected to the supply port for
transmitting the gas. Since each individual gas supply device has
an individual supply port, the individual gas supply device can be
connected easily to the external equipment. Since each individual
gas supply device has a supply pipe, the individual gas supply
device can conveniently send the gas supplied by the external
equipment to the solution treating unit. Here, the external
equipment, more strictly, is gas supplying external equipment.
In the above invention, it is preferred that the substrate treating
apparatus further comprises a plurality of blowout units
individually connected to the individual gas supply devices, each
for blowing out the gas only to one of the solution treating units.
Each blowout unit is connected to only one of the individual gas
supply devices. Each individual gas supply device supplies the gas
to the one blowout unit connected thereto. Each blowout unit blows
out the gas to only one of the solution treating units. Thus, each
solution treating unit is supplied with the gas conveniently.
In the above invention, it is preferred that the individual gas
supply devices include supply pipes connected to the blowout units;
and a plurality of the supply pipes respectively connected to a
plurality of blowout units adjoining each other substantially in a
horizontal direction extend in mutually different directions from
the blowout units. The supply pipe of each individual gas supply
device is connected only to the blowout unit corresponding to that
individual gas supply device. Consequently, the individual gas
supply device is conveniently connectable to the blowout unit.
Where a plurality of blowout units are arranged to adjoin each
other substantially in a horizontal direction, a plurality of
supply pipes connected to these blowout units extend in mutually
different directions from the blowout units. Consequently, the
plurality of individual gas supply devices can be prevented
conveniently from approaching each other. Therefore, even where the
plurality of blowout units adjoin each other substantially in the
horizontal direction, interference of the rates of gas supply can
be prevented conveniently between the plurality of individual gas
supply devices.
The supply pipes and blowout units may be connected directly or may
be connected indirectly.
In the above invention, it is preferred that the substrate treating
apparatus further comprises a controller for controlling the rate
of gas supply from the individual gas supply devices to the
solution treating units; wherein the controller changes
individually the rate of gas supply to each of the solution
treating units. The controller controls the rate of gas supply in
the individual gas supply devices for each individual gas supply
device. Consequently, the rate of gas supply to the solution
treating units is changed for each solution treating unit. This can
conveniently improve the quality of solution treatment of the
substrates performed by each solution treating unit.
In the above invention, it is preferred that the controller changes
the rate of gas supply to the solution treating units while the
solution treating units are engaged in the solution treatment. The
treatment quality in the solution treating units can be improved
further conveniently.
In the above invention, it is preferred that the substrate treating
apparatus further comprises individual gas exhaust devices provided
to correspond individually to the solution treating units, each for
exhausting gas at a variable rate only from one of the solution
treating units. The substrate treating apparatus has individual gas
exhaust devices. The individual gas exhaust devices are provided to
correspond individually to the solution treating units. Therefore,
the substrate treating apparatus has a plurality of individual gas
exhaust devices. Each individual gas exhaust device is related to
one of the solution treating units. The individual gas exhaust
devices exhaust gas only from the solution treating units
corresponding to the individual gas exhaust devices. Further, the
gas exhaust devices have an adjustable rate of gas exhaust from the
solution treating units corresponding to the individual gas exhaust
devices. Therefore, the rate of gas exhaust from the solution
treating units is changeable for each solution treating unit.
Consequently, an appropriate quantity of gas can be exhausted in
appropriate timing from each solution treating unit. Therefore, the
treatment quality in each solution treating unit can be improved
conveniently.
In the above invention, it is preferred that the substrate treating
apparatus further comprises chambers for housing the plurality of
solution treating units; wherein the solution treating units housed
in each same chamber are arranged to perform the same type of
solution treatment of the substrates. The substrate treating
apparatus has chambers. Each chamber houses a plurality of solution
treating units. The plurality of solution treating units arranged
in the same chamber perform the same type of solution treatment of
the substrates. This can improve the treatment quality of each
solution treating unit with increased convenience. Here, "the same
type of solution treatment" is, for example, a treatment performed
by supplying the substrates with the same type of treating
solution.
A substrate treating apparatus, in another aspect of this
invention, comprises a plurality of solution treating units for
performing solution treatment of substrates; and individual gas
exhaust devices provided to correspond individually to the solution
treating units, each for exhausting gas at a variable rate only
from one of the solution treating units.
The substrate treating apparatus according to this invention has a
plurality of solution treating units and a plurality of individual
gas exhaust devices. The solution treating units perform solution
treatment. The solution treatment is a treatment carried out by
supplying the substrates with a treating solution. The individual
gas exhaust devices are provided individually for the solution
treating units. Each gas exhaust device is related to one of the
solution treating units. The individual gas exhaust devices exhaust
gas only from the solution treating units corresponding to the
individual gas exhaust devices. Further, the gas exhaust devices
have an adjustable rate of gas exhaust from the solution treating
units corresponding to the individual gas exhaust devices.
Therefore, the rate of gas exhaust from the solution treating units
is changeable for each solution treating unit. Consequently, an
appropriate quantity of gas can be exhausted in appropriate timing
from each solution treating unit. Therefore, the treatment quality
in each solution treating unit can be improved conveniently.
In the above invention, it is preferred that each of the individual
gas exhaust devices includes an exhaust adjuster for adjusting the
rate of gas exhaust from one of the solution treating units. The
individual gas exhaust devices with the exhaust adjusters can
conveniently adjust the rate of gas exhaust from the solution
treating units.
In the above invention, it is preferred that the substrate treating
apparatus further comprises collecting pipes provided to correspond
individually to solution treating unit groups each formed of a
plurality of the solution treating units arranged in a column
substantially in an up-down direction, for collecting the gas only
from a plurality of the individual gas exhaust devices
corresponding to each solution treating unit group. A plurality of
solution treating units arranged in a column substantially in the
up-down direction constitute one solution treating unit group. The
collecting pipes are provided individually for the solution
treating unit groups. Each collecting pipe is related to one of the
solution treating unit groups. As a result, each collecting pipe is
related to the plurality of solution treating units belonging to
one solution treating unit group, and the plurality of individual
gas exhaust devices that exhaust gas from these solution treating
units. Each collecting pipe collects gas only from the plurality of
individual gas exhaust devices corresponding to the collecting
pipe. For example, each collecting pipe is connected only to the
plurality of individual gas exhaust devices corresponding to the
collecting pipe. The plurality of individual gas exhaust devices
corresponding to the same collecting pipe exhaust the gas,
respectively, from the plurality of solution treating units
arranged in a column substantially in the up-down direction.
Therefore, the shape, size, direction and so on of the individual
gas exhaust devices can easily be uniformed among the individual
gas exhaust devices corresponding to the same collecting pipe. As a
result, the rates of gas exhaust can be prevented conveniently from
interfering with one another among the individual gas exhaust
devices corresponding to the same collecting pipe. For example, the
rate of gas exhaust from part of the individual gas exhaust devices
can be prevented conveniently from causing variations in the rates
of gas exhaust from the other individual gas exhaust devices. When
the rate of gas exhaust from part of the individual gas exhaust
devices is changed intentionally, for example, this change can be
prevented conveniently from inadvertently varying the rate of gas
exhaust from the other individual gas exhaust devices. Since the
collecting pipe collects the gas from a plurality of individual gas
exhaust devices, the individual gas exhaust devices can be reduced
in size.
In the above invention, it is preferred that the plurality of
individual gas exhaust devices are separated from one another at
least inside the substrate treating apparatus. In other words, the
individual gas exhaust devices are not connected directly or
indirectly to one another at least inside the substrate treating
apparatus. According to such a construction of the individual gas
exhaust devices, whether the individual gas exhaust devices have
exhaust adjusters or not, the rate of gas exhaust from the solution
treating units can conveniently be changed for each solution
treating unit. For example, even where the individual gas exhaust
devices do not have exhaust adjusters, the rate of gas exhaust in
the individual gas exhaust devices can be adjusted for each
individual gas exhaust device by using external equipment.
Consequently, the rate of gas exhaust from the solution treating
units can be changed conveniently for each solution treating unit.
The external equipment here is gas exhausting external equipment
installed outside the substrate treating apparatus for exhausting
the gas.
In the above invention, it is preferred that each of the individual
gas exhaust devices includes an exhaust port for connection to
external equipment installed outside the substrate treating
apparatus; and an exhaust pipe connected to the exhaust port for
transmitting the gas. Since each individual gas exhaust device has
an individual exhaust port, the individual gas exhaust device can
be connected easily to the external equipment. Since each
individual gas exhaust device has an exhaust pipe, the individual
gas exhaust device can conveniently send the gas exhausted from the
solution treating unit to the external equipment. Here, the
external equipment, more strictly, is gas exhausting external
equipment.
In the above invention, it is preferred that the solution treating
units include cups for surrounding side areas of the substrates
under treatment; the individual gas exhaust devices are arranged to
exhaust gas from inside the cups. Each individual gas exhaust
device exhausts only the gas in the solution treating unit
corresponding to that individual gas exhaust device. With this
arrangement, the individual gas exhaust devices can conveniently
exhaust gas from the solution treating units.
In the above invention, it is preferred that the individual gas
exhaust devices include exhaust pipes connected to the cups; and a
plurality of the exhaust pipes respectively connected to a
plurality of cups adjoining each other substantially in a
horizontal direction extend in mutually different directions from
the cups. The exhaust pipe of each individual gas exhaust device is
connected only to the cup of the solution treating unit
corresponding to that individual gas exhaust device. Consequently,
the individual gas exhaust device is conveniently connectable to
the cup. Where a plurality of cups are arranged to adjoin each
other substantially in a horizontal direction, a plurality of
individual gas exhaust devices connected to these cups extend in
mutually different directions from the cups. Consequently, the
plurality of individual gas exhaust devices can be prevented
conveniently from approaching each other. Therefore, even where the
plurality of cups adjoin each other substantially in the horizontal
direction, interference of the rates of gas exhaust can be
prevented conveniently between the plurality of individual gas
exhaust devices.
The exhaust pipes and cups may be connected directly or may be
connected indirectly.
In the above invention, it is preferred that the substrate treating
apparatus further comprises a controller for controlling the rate
of gas exhaust at which the individual gas exhaust devices exhaust
the gas from the solution treating units; wherein the controller
changes individually the rate of gas exhaust from each of the
solution treating units. The controller controls the rate of gas
exhaust in the individual gas exhaust devices for each individual
gas exhaust device. Consequently, the rate of gas exhaust from the
solution treating units is changed for each solution treating unit.
This can conveniently improve the quality of solution treatment of
the substrates performed by each solution treating unit.
In the above invention, it is preferred that the controller changes
the rate of gas exhaust from the solution treating units while the
solution treating units are engaged in the solution treatment. The
treatment quality in the solution treating units can be improved
further conveniently.
This specification also discloses the following aspect of the
invention relating to the substrate treating apparatus:
(1) In the above invention, it is preferred that the distributing
pipes are installed to extend in the up-down direction in positions
laterally of the solution treating unit groups.
According to the invention in paragraph (1) above, the solution
treating units belonging to the same solution treating unit group
are located substantially in the same direction relative to the
distributing pipe corresponding to that solution treating unit
group. Further, the solution treating units belonging to the same
solution treating unit group are spaced substantially the same
distance from the distributing pipe corresponding to that solution
treating unit group. Therefore, the shape, size, direction and so
on of the individual gas supply devices can further easily be
uniformed among the plurality of individual gas supply devices
corresponding to the same solution treating unit group.
(2) In the above invention, it is preferred that the collecting
pipes are installed to extend in the up-down direction in positions
laterally of the solution treating unit groups.
According to the invention in paragraph (2) above, the solution
treating units belonging to the same solution treating unit group
are located substantially in the same direction relative to the
collecting pipe corresponding to that solution treating unit group.
Further, the solution treating units belonging to the same solution
treating unit group are spaced substantially the same distance from
the collecting pipe corresponding to that solution treating unit
group. Therefore, the shape, size, direction and so on of the
individual gas exhaust devices can further easily be uniformed
among the plurality of individual gas exhaust devices corresponding
to the same collecting pipe.
(3) In the above invention, it is preferred that the substrate
treating apparatus further comprises distributing pipes provided to
correspond individually to blowout unit groups each formed of a
plurality of blowout units arranged in a column substantially in an
up-down direction, for distributing the gas only to a plurality of
the individual gas supply devices corresponding to the blowout unit
group.
According to the invention in paragraph (3) above, a plurality of
blowout units arranged in a column substantially in the up-down
direction constitute one blowout unit group. The distributing pipes
are provided individually for the blowout unit groups. Each
distributing pipe is related to one of the blowout unit groups. As
a result, each distributing pipe is related to the plurality of
blowout units belonging to one blowout unit group, and the
plurality of individual gas supply devices connected to these
blowout units. Each distributing pipe distributes gas only to the
plurality of individual gas supply devices corresponding to the
distributing pipe. For example, each distributing pipe is connected
only to the plurality of individual gas supply devices
corresponding to the distributing pipe. The plurality of individual
gas supply devices corresponding to the same distributing pipe
supply the gas, respectively, to the plurality of blowout units
arranged in a column substantially in the up-down direction.
Therefore, the shape, size, direction and so on of the individual
gas supply devices can easily be uniformed among the plurality of
individual gas supply devices corresponding to the same
distributing pipe. As a result, the rates of gas supply can be
prevented conveniently from interfering with one another among the
individual gas supply devices corresponding to the same
distributing pipe.
(4) In the above invention, it is preferred that the distributing
pipes are installed to extend in the up-down direction in positions
laterally of the blowout unit groups.
According to the invention in paragraph (4) above, the blowout
units belonging to the same blowout unit group are located
substantially in the same direction relative to the distributing
pipe corresponding to that blowout unit group. Further, the blowout
units belonging to the same blowout unit group are spaced
substantially the same distance from the distributing pipe
corresponding to that blowout unit group. Therefore, the shape,
size, direction and so on of the individual gas supply devices can
further easily be uniformed among the plurality of individual gas
supply devices corresponding to the same blowout unit group.
(5) In the above invention, it is preferred that the substrate
treating apparatus further comprises collecting pipes provided to
correspond individually to cup groups each formed of a plurality of
cups arranged in a column substantially in an up-down direction,
for collecting the gas only from a plurality of the individual gas
exhaust devices corresponding to the cup group.
According to the invention in paragraph (5) above, a plurality of
cups arranged in a column substantially in the up-down direction
constitute one cup group. Each collecting pipe is related to one of
the cup groups. As a result, each collecting pipe is related to the
plurality of cups belonging to one cup group, and the plurality of
individual gas exhaust devices connected to these cups. Each
collecting pipe collects gas only from the individual gas exhaust
devices corresponding to the collecting pipe. For example, each
collecting pipe is connected only to the plurality of individual
gas exhaust devices corresponding to the collecting pipe. The
plurality of individual gas exhaust devices corresponding to the
same collecting pipe exhaust the gas, respectively, from the
plurality of cups arranged in a column substantially in the up-down
direction. Therefore, the shape, size, direction and so on of the
individual gas exhaust devices can easily be uniformed among the
plurality of individual gas exhaust devices corresponding to the
same collecting pipe. As a result, the rates of gas exhaust can be
prevented conveniently from interfering with one another among the
individual gas exhaust devices corresponding to the same collecting
pipe.
(6) In the above invention, it is preferred that the collecting
pipes are installed to extend in the up-down direction in positions
laterally of the cup groups.
According to the invention in paragraph (6) above, the cups
belonging to the same cup group are located substantially in the
same direction relative to the collecting pipe corresponding to
that cup group. Further, the cups belonging to the same cup group
are spaced substantially the same distance from the collecting pipe
corresponding to that cup group. Therefore, the shape, size,
direction and so on of the individual gas exhaust devices can
further easily be uniformed among the plurality of individual gas
exhaust devices corresponding to the same cup group.
(7) In the above invention, it is preferred that the controller is
arranged to change individually the rate of gas supply to each
solution treating unit according to operation of each solution
treating unit.
According to the invention in paragraph (6) above, the treatment
quality of each solution treating unit can be improved further
conveniently. Here, the term "operation of the solution treating
unit" includes, for example, the solution treating unit performing
solution treatment of the substrates with a treating solution, and
the solution treating unit being on standby instead of treating the
substrates with a treating solution. The term "the solution
treating unit performing solution treatment of the substrates"
includes, for example, the solution treating unit starting solution
treatment, the solution treating unit finishing solution treatment,
and various operations of the solution treating unit during a
period from start to finish of the solution treatment. The term
"the solution treating unit being on standby" includes, for
example, loading of the substrates into the solution treating unit,
unloading of the substrates from the solution treating unit,
changing of the substrates in the solution treating unit, and the
solution treating unit coming to rest/stopping and so on.
(8) In the above invention, it is preferred that the controller
changes the rate of gas supply to the solution treating units while
the solution treating units are engaged in the solution treatment,
based on one of an elapsed time from a starting time of the
solution treatment and a treatment condition for the solution
treatment.
According to the invention in paragraph (8) above, an appropriate
quantity of gas can be supplied in appropriate timing to the
solution treating units. Here, the "treatment condition for the
solution treatment" includes, for example, discharge timing of a
treating solution, discharge rate of the treating solution,
rotation speed of the substrate and so on.
(9) In the above invention, it is preferred that the controller is
arranged to change individually the rate of gas exhaust from each
solution treating unit according to operation of each solution
treating unit.
According to the invention in paragraph (9) above, the treatment
quality of each solution treating unit can be improved further
conveniently.
(10) In the above invention, it is preferred that the controller
changes the rate of gas exhaust from the solution treating units
while the solution treating units are engaged in the solution
treatment, based on one of an elapsed time from a starting time of
the solution treatment and a treatment condition for the solution
treatment.
According to the invention in paragraph (10) above, an appropriate
quantity of gas can be exhausted in appropriate timing from the
solution treating units.
BRIEF DESCRIPTION OF THE DRAWINGS
For the purpose of illustrating the invention, there are shown in
the drawings several forms which are presently preferred, it being
understood, however, that the invention is not limited to the
precise arrangement and instrumentalities shown.
FIG. 1 is a plan view of a substrate treating apparatus according
to this invention;
FIG. 2 is a side view taken on line a-a of FIG. 1;
FIG. 3 is a front view taken on line b-b of FIG. 1;
FIG. 4 is a side view taken on line c-c of FIG. 1;
FIG. 5 is a side view taken on line d-d of FIG. 1;
FIG. 6 is a perspective view of a main transport mechanism;
FIG. 7 is a detailed side view showing solution treating units,
individual gas supply devices and individual gas exhaust
devices;
FIG. 8 is a distribution diagram of gas supply to and gas exhaust
from the solution treating units;
FIG. 9 is a control block diagram of the substrate treating
apparatus;
FIG. 10 is a view illustrating substrate transport routes;
FIG. 11 is a view illustrating an order in which each transport
mechanism accesses receivers and treating units;
FIG. 12 is a timing chart illustrating a relationship between
operation of the solution treating units, and rates of gas supply
and exhaust relating to the solution treating units;
FIG. 13 is a detailed side view showing individual gas supply
devices and individual gas exhaust devices according to modified
embodiments;
FIG. 14 is a detailed side view showing individual gas supply
devices and individual gas exhaust devices according to modified
embodiments; and
FIG. 15 is a detailed side view showing individual gas supply
devices and individual gas exhaust devices according to a modified
embodiment.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
An embodiment of this invention will be described hereinafter with
reference to the drawings.
<Outline of Substrate Treating Apparatus>
FIG. 1 is a plan view of a substrate treating apparatus according
to this invention. A substrate treating apparatus 1 treats wafers
W. The "wafers W" here means semiconductor wafers, glass substrates
for photomasks, glass substrates for liquid crystal displays,
substrates for plasma displays, substrates for optical disks,
substrates for magnetic disks, substrates for magneto-optical disks
and so on (hereinafter called simply wafers).
The substrate treating apparatus 1 includes an indexer section 11,
a treating section 17 and an interface section 19. The indexer
section 11 is connected to the treating section 17. The indexer
section 11 feeds the wafers W to the treating section 17. The
treating section 17 performs solution treatment in which treating
solutions are supplied to the wafers W, for example. The interface
section 19 is connected to the treating section 17. Further, the
interface section 19 is connected to an exposing machine EXP which
is provided separately from the substrate treating apparatus 1. The
interface section 19 transports the wafers W between the treating
section 17 and exposing machine EXP. The exposing machine EXP
performs exposing treatment of the wafers W.
The indexer section 11, treating section 17, interface section 19
and exposing machine EXP are arranged in this order in a row.
In this specification, the direction in which the indexer section
11, treating section 17 and interface section 19 are arranged is
called "fore-and-aft direction X". The fore-and-aft direction X is
horizontal. In particular, a direction pointing from the interface
section 19 toward the indexer section 11 is called "forward XF",
and the direction opposite to forward XF is called "backward XB".
The horizontal direction perpendicular to the fore-and-aft
direction X is called "width direction Y". One direction of the
"width direction Y" is called "rightward YR", and the other
direction opposite to rightward YR is called "leftward YL". The
vertical direction is called "up-down direction Z". The
fore-and-aft direction X and width direction Y, when not
particularly distinguished, are written simply "laterally" or "in
the horizontal direction".
The treating section 17 includes two treating blocks BA and BB. The
treating blocks BA and BB perform the solution treatment and the
like of the wafers W, respectively. The treating block BA and
treating block BB are arranged in a row in the fore-and-aft
direction X. The treating block BA is disposed forward XF of the
treating block BB. The treating block BA and treating block BB are
connected to each other. The treating block BA and treating block
BB can transport the wafers W reciprocally. The indexer section 11
is connected to the treating block BA. The interface section 19 is
connected to the treating block BB.
<Indexer Section 11>
Reference is made to FIGS. 1 and 2. FIG. 2 is a side view taken on
line a-a of FIG. 1.
The indexer section 11 has carrier tables 12, a transporting space
AID and an indexer's transport mechanism TID.
The carrier tables 12 receive and hold carriers C. The carriers C
are placed on the carrier tables 12 by an unillustrated external
transport mechanism, for example. Each carrier C stores a plurality
of wafers W. The carriers C are FOUPs (front opening unified pods),
for example.
The transporting space AID is provided backward XB of the carrier
tables 12. The indexer's transport mechanism TID is installed in
the transporting space AID. The indexer's transport mechanism TID
transports the wafers W out of the carriers C and into the carriers
C. Further, the indexer's transport mechanism TID passes the wafers
W to the treating section 17, and receives the wafers W from the
treating section 17.
The indexer's transport mechanism TID is what is called a transport
robot. For example, the indexer's transport mechanism TID has two
hands 13 for holding wafers W, and a hand drive mechanism 14 for
driving each hand 13. The hands 13 hold one wafer W each. The hand
drive mechanism 14 moves the hands 13 in the fore-and-aft direction
X, width direction Y and up-down direction Z, and rotates the hands
13 about the up-down direction Z. Thus, the indexer's transport
mechanism TID accesses the carriers C and the treating block
BA.
<Basic Construction of Treating Block BA>
Reference is made to FIG. 1. The treating block BA has a
transporting space AA for transporting wafers W. The transporting
space AA, in plan view, is located at the middle in the width
direction Y of the treating block BA. The transporting space AA, in
plan view, extends in the fore-and-aft direction X.
Reference is made to FIGS. 2 and 3. FIG. 3 is a front view taken on
line b-b of FIG. 1. The transporting space AA is split into a
plurality of divided transporting spaces AA1 and AA2. The divided
transporting space AA1 corresponds to a lower part of the
transporting space AA. The divided transporting space AA2
corresponds to an upper part of the transporting space AA. The
divided transporting spaces AA1 and AA2 are arranged in the up-down
direction Z. The divided transporting spaces AA1 and AA2 are
arranged in this order from bottom upward.
A main transport mechanism TA1 is installed in the divided
transporting space AA1. A main transport mechanism TA2 is installed
in the divided transporting space AA2. The main transport
mechanisms TA1 and TA2 transport wafers W, respectively. The main
transport mechanism TA1 moves within the divided transporting space
AA1, and does not reach out into the other divided transporting
space AA2. Similarly, the main transport mechanism TA2 moves within
the divided transporting space AA2, and does not reach out into the
other divided transporting space AA1.
Reference is made to FIGS. 1, 3 and 4. FIG. 4 is a side view taken
on line c-c of FIG. 1. The treating block BA has a plurality of
(e.g. eight) solution treating units SUa-SUh. The solution treating
units SUa-SUh are arranged laterally (rightward YR) of the
transporting space AA. The solution treating units SUa-SUd are
arranged laterally (rightward YR) of the divided transporting space
AA1. The solution treating units SUe-SUh are arranged laterally
(rightward YR) of the divided transporting space AA2.
The solution treating units SUa-SUh are arranged in a matrix form,
substantially in the horizontal direction (e.g. in the fore-and-aft
direction X) and substantially in the up-down direction Z.
Specifically, the solution treating units SUa and SUb are arranged
substantially in the horizontal direction. Similarly, the solution
treating units SUc and SUd are arranged substantially in the
horizontal direction. The solution treating units SUe and SUf are
arranged substantially in the horizontal direction. The solution
treating units SUg and SUh are arranged substantially in the
horizontal direction. The solution treating units SUa, SUc, SUe and
SUg are arranged in a column substantially in the up-down direction
Z. The solution treating units SUa, SUc, SUe and SUg constitute a
columnar group of solution treating units SU (hereinafter called
simply "solution treating unit group"). The solution treating units
SUb, SUd, SUf and SUh are arranged in a column substantially in the
up-down direction Z. The solution treating units SUb, SUd, SUf and
SUh constitute one solution treating unit group.
Each of the solution treating units SUa-SUh performs solution
treatment. The solution treatment is treatment carried out by
supplying the wafers W with treating solutions. The solution
treatment carried out by each of the solution treating units
SUa-SUh is coating treatment. The coating treatment applies a
treating solution to the wafers W to form coating film on the
surfaces of the wafers W.
More particularly, the solution treating units SUa, SUb, SUe and
SUf carry out antireflection film forming treatment. The
antireflection film forming treatment is a treatment for forming
antireflection film on the surfaces of the wafers W by applying an
antireflection film material to the wafers W. That is, the solution
treating units SUa, SUb, SUe and SUf are antireflection film
coating units BARC. The solution treating units SUc, SUd, SUg and
SUh carry out resist film forming treatment. The resist film
forming treatment is a treatment for forming resist film on the
surfaces of the wafers W by applying a resist film material to the
wafers W. That is, the solution treating units SUc, SUd, SUg and
SUh are resist film coating units RESIST.
Reference is made to FIGS. 3 and 4. The treating block BA has
chambers CHa, CHb, CHc and CHd. The chambers CHa-CHd are arranged
laterally (rightward YR) of the transporting space AA. The chambers
CHa-CHd are arranged in the up-down direction Z. The chamber CHa
houses the solution treating units SUa and SUb. The solution
treating unit SUa and solution treating unit SUb are arranged in
the same space. The solution treating unit SUa and solution
treating unit SUb adjoin each other substantially in the horizontal
direction. That is, the solution treating unit SUa and solution
treating unit SUb face each other substantially in the horizontal
direction. The solution treating unit SUa and solution treating
unit SUb are not separated by a partition wall or the like.
Similarly, the chamber CHb houses the solution treating units SUc
and SUd. The chamber CHc houses the solution treating units SUe and
SUf. The chamber CHd houses the solution treating units SUg and
SUh.
In each of the chambers CHa-CHd, the same type of solution
treatment is carried out. For example, the solution treating units
SUa and SUb housed in the chamber CHa carry out the same type of
solution treatment (specifically, the antireflection film forming
treatment). The solution treating units SUa and SUb carry out the
solution treatment in the same space. Similarly, the solution
treating units SUc and SUd housed in the chamber CHb carry out the
same type of solution treatment (specifically, the resist film
forming treatment). The solution treating units SUe and SUf housed
in the chamber CHc carry out the same type of solution treatment
(specifically, the antireflection film forming treatment). The
solution treating units SUg and SUh housed in the chamber CHd carry
out the same type of solution treatment (specifically, the resist
film forming treatment).
Reference is made to FIGS. 1, 3 and 5. FIG. 5 is a side view taken
on line d-d of FIG. 1. The treating block BA has various
heat-treating units CPa, CPb, PHPa, PHPb, AHLa and AHLb. The
heat-treating units CPa, CPb, PHPa, PHPb, AHLa and AHLb are
arranged laterally (leftward YL) of the transporting space AA.
The heat-treating units CPa, CPb, PHPa, PHPb, AHLa and AHLb are
arranged in a matrix form, in the fore-and-aft direction X and the
up-down direction Z. The heat-treating units CPa, PHPa and AHLa are
arranged laterally (leftward YL) of the divided transporting space
AA1. The heat-treating units CPb, PHPb and AHLb are arranged
laterally (leftward YL) of the divided transporting space AA2. The
arrangement of the heat-treating units CPa relative to the divided
transporting space AA1, preferably, is equal to the arrangement of
the heat-treating units CPb relative to the divided transporting
space AA2. Similarly, the arrangement of the heat-treating unit
PHPa relative to the divided transporting space AA1, preferably, is
equal to the arrangement of the heat-treating units PHPb relative
to the divided transporting space AA2. The arrangement of the
heat-treating units AHLa relative to the divided transporting space
AA1, preferably, is equal to the arrangement of the heat-treating
units AHLb relative to the divided transporting space AA2.
Each of the heat-treating units CPa, CPb, PHPa, PHPb, AHLa and AHLb
performs heat treatment of the wafers W. Specifically, the
heat-treating units CPa and CPb carry out cooling treatment for
cooling the wafers W. The heat-treating units PHPa and PHPb carry
out heating and cooling treatment to heat the wafers W and then
cool the wafers W. The heat-treating units AHLa and AHLb perform
hydrophobic treatment, which is a heat treatment carried out in a
vapor atmosphere of hexamethyldisilazane (HMDS) in order to enhance
film adhesion to the wafers W. Each of the heat-treating units CPa,
CPb, PHPa, PHPb, AHLa and AHLb has a plate 20 and other elements
for holding a wafer W.
The main transport mechanism TA1 transports wafers W to the
solution treating units SUa-SUd and the heat-treating units CPa,
PHPa and AHLa. The main transport mechanism TA2 transports wafers W
to the solution treating units SUe-SUh and the heat-treating units
CPb, PHPb and AHLb.
As is clear from the above description, the treating block BA has a
multistory structure including a plurality of (e.g. two) stories Ka
and Kb arranged in the up-down direction Z. The story Ka has
installed thereon the main transport mechanism TA1, the solution
treating units SUa-SUd to which the main transport mechanism TA1
transports wafers W, and the heat-treating units CPa, PHPa and AHLa
to which the main transport mechanism TA1 transports wafers W. The
story Kb has installed thereon the main transport mechanism TA2,
the solution treating units SUe-SUh to which the main transport
mechanism TA2 transports wafers W, and the heat-treating units CPb,
PHPb and AHLb to which the main transport mechanism TA2 transports
wafers W. Each of the stories Ka and Kb carries out transportation
and treatment of the wafers W. Operations of the stories Ka and Kb
are independent of each other.
Reference is made to FIGS. 1 and 2. The substrate treating
apparatus 1 has receivers PAaS, PAaR, PAbS and PAbR for placing
wafers W thereon. The receivers PAaS, PAaR, PAbS and PAbR are
arranged between the indexer section 11 and treating block BA.
Specifically, the receivers PAaS and PAaR are installed to
interconnect the transporting space AID and divided transporting
space AA1. The receivers PAbS and PAbR are installed to
interconnect the transporting space AID and divided transporting
space AA2. Each of the receivers PAaS, PAaR, PAbS and PAbR has a
plate 15 or the like on which a wafer W is placed.
The indexer's transport mechanism TID and main transport mechanism
TA1 reciprocally transfer wafers W using the receivers PAaS and
PAaR. For example, the receiver PAaS is used when the indexer's
transport mechanism TID passes the wafers W to the main transport
mechanism TA1. The receiver PAaR is used when the indexer's
transport mechanism TID receives the wafers W from the main
transport mechanism TA1. Similarly, the indexer's transport
mechanism TID and main transport mechanism TA2 reciprocally
transfer wafers W using the receivers PAbS and PAbR.
<Basic Construction of Treating Block BB>
A construction of the treating block BB will be described. Since
the treating block BB has a similar construction to the treating
block BA, description of the treating block BB will be omitted as
appropriate.
Reference is made to FIG. 1. The treating block BB has a
transporting space AB. The transporting space AB, in plan view, is
disposed at the middle in the width direction Y of the treating
block BB. The transporting space AB is disposed backward XB of the
transporting space AA. The transporting space AB borders on the
transporting space AA. The transporting space AB is connected to
the transporting space AA.
Reference is made to FIG. 2. The transporting space AB is split
into a plurality of divided transporting spaces AB1 and AB2. The
divided transporting spaces AB1 and AB2 are arranged in the up-down
direction Z. The divided transporting space AB1 corresponds to a
lower part of the transporting space AB. The divided transporting
space AB1 is disposed in the same height position as the divided
transporting space AA1. The divided transporting space AB1 is
connected to the divided transporting space AA1. The divided
transporting space AB2 corresponds to an upper part of the
transporting space AB. The divided transporting space AB2 is
disposed in the same height position as the divided transporting
space AA2. The divided transporting space AB2 is connected to the
divided transporting space AA2.
The treating block BB has main transport mechanisms TB1 and TB2.
The main transport mechanism TB1 is installed in the divided
transporting space AB1. The main transport mechanism TB2 is
installed in the divided transporting space AB2.
Receivers PAcS, PAcR, PAdS and PAdR are arranged between the
treating block BA and treating block BB. Specifically, the
receivers PAcS and PAcR are installed to interconnect the divided
transporting space AA1 and divided transporting space AB1. The
receivers PAdS and PAdR are installed to interconnect the divided
transporting space AA2 and divided transporting space AB2. The main
transport mechanism TA1 and main transport mechanism TB1
reciprocally transfer wafers W using the receivers PAcS and PAcR.
The main transport mechanism TA2 and main transport mechanism TB2
reciprocally transfer wafers W using the receivers PAdS and
PAdR.
Reference is made to FIGS. 1 and 4. The treating block BB has a
plurality of (e.g. eight) solution treating units SUi-SUp. The
solution treating units SUi-SUp are arranged laterally (rightward
YR) of the transporting space AB. The solution treating units
SUi-SUl are arranged laterally (rightward YR) of the divided
transporting space AB1. The solution treating units SUm-SUp are
arranged laterally (rightward YR) of the divided transporting space
AB2.
The solution treating units SUi-SUp are arranged in a matrix form,
substantially in the horizontal direction (e.g. in the fore-and-aft
direction X) and substantially in the up-down direction Z.
Specifically, the solution treating units SUi and SUj are arranged
substantially in the horizontal direction. The solution treating
units SUk and SUl are arranged substantially in the horizontal
direction. The solution treating units SUm and SUn are arranged
substantially in the horizontal direction. The solution treating
units SUo and SUp are arranged substantially in the horizontal
direction. The solution treating units SUi, SUk, SUm and SUo are
arranged in a column substantially in the up-down direction Z. The
solution treating units SUi, SUk, SUm and SUo constitute one
solution treating unit group. The solution treating units SUj, SUl,
SUn and SUp are arranged in a column substantially in the up-down
direction Z. The solution treating units SUj, SUl, SUn and SUp
constitute one solution treating unit group.
Each of the solution treating units SUi-SUp performs solution
treatment. The solution treatment carried out by each of the
solution treating units SUi-SUp is developing treatment. The
developing treatment is development carried out by applying a
developer to the wafers W. That is, the solution treating units
SUi-SUp are developing units DEV.
The treating block BB has chambers CHe, CHf, CHg and CHh. The
chamber CHe houses the solution treating units SUi and SUj. The
chamber CHf houses the solution treating units SUk and SUl. The
chamber CHg houses the solution treating units SUm and SUn. The
chamber CHh houses the solution treating units SUo and SUp.
In each of the chambers CHe-CHh, the same type of solution
treatment (specifically, the developing treatment) is carried
out.
In the following description, the solution treating units SUa-SUp,
when not particularly distinguished, will be called simply
"solution treating unit(s) SU". The chambers CHa-CHh, when not
particularly distinguished, will be called simply "chamber(s)
CH".
Reference is made to FIGS. 1 and 5. The treating block BB has
heat-treating units CPc, CPd, PHPc, PHPd, PEBc and PEBd, edge
exposing units EEWc and EEWd, and receivers PAeS, PAeR, PAfS and
PAfR. These various units and receivers are arranged laterally
(leftward YL) of the transporting space AB.
The heat-treating units CPc, PHPc and PEBc are arranged laterally
(leftward YL) of the divided transporting space AB1. The
heat-treating units CPd, PHPd and PEBd are arranged laterally
(leftward YL) of the divided transporting space AB2. The edge
exposing unit EEWc is disposed laterally (leftward YL) of the
divided transporting space AB1. The edge exposing unit EEWd is
disposed laterally (leftward YL) of the divided transporting space
AB2. The receivers PAeS and PAeR are arranged laterally (leftward
YL) of the divided transporting space AB1. The receivers PAfS and
PAfR are arranged laterally (leftward YL) of the divided
transporting space AB2.
Each of the heat-treating units CPc, CPd, PHPc, PHPd, PEBc and PEBd
performs heat treatment of the wafers W. Specifically, the
heat-treating units PEBc and PEBd perform post-exposure bake of
wafers W after exposing treatment. The edge exposing units EEWc and
EEWd expose edge portions of the resist film on the wafers W. Each
of the edge exposing units EEWc and EEWd has a spin holder 27 (see
FIG. 1) for rotatably holding a wafer W, and a light emitter (not
shown) for exposing edges of the wafer held by the spin holder
27.
The heat-treating units PEBc and PEBd and the receivers PAeS, PAeR,
PAfS and PAfR are arranged in a rear part of the treating block BB.
The heat-treating units PEBc and PEBd and the receivers PAeS, PAeR,
PAfS and PAfR border on the interface section 19.
The main transport mechanism TB1 transports wafers W to the
solution treating units SUi-SUl, heat-treating units CPc and PHPc,
edge exposing unit EEWc and receivers PAcS, PAcR, PAeS and PAeR.
The main transport mechanism TB2 transports wafers W to the
solution treating units SUm-SUp, heat-treating units CPd and PHPd,
edge exposing unit EEWd and receivers PAdS, PAdR, PAfS and
PAfR.
As is clear from the above description, the treating block BB has a
multistory structure including a plurality of (e.g. two) stories Kc
and Kd arranged in the up-down direction Z. The story Kc has
installed thereon the main transport mechanism TB1, and the
solution treating units SUi-SUl and so on to which the main
transport mechanism TB1 transports wafers W. The story Kd has
installed thereon the main transport mechanism TB2, and the
solution treating units SUm-SUp and so on to which the main
transport mechanism TA2 transports wafers W. Each of the stories Kc
and Kd carries out transportation and treatment of the wafers W.
Operations of the stories Kc and Kd are independent of each
other.
<Detailed Construction of Main Transport Mechanisms, and
Construction Relating to Gas Supply to and Gas Exhaust from
Transporting Spaces>
A construction of the main transport mechanisms TA1, TA2, TB1 and
TB2 will be described. The main transport mechanisms TA1, TA2, TB1
and TB2 have the same construction. The main transport mechanism
TA2 will be described by way of example hereinafter.
Reference is made to FIGS. 1, 2, 3 and 6. FIG. 6 is a perspective
view of the main transport mechanism. The main transport mechanism
TA2 has a pair of first guide rails 21, a second guide rail 22, a
base 23, a turntable 24 and two hands 25.
The two first guide rails 21 are fixed to the side having the
solution treating units SU of the divided transporting space AA2.
For example, the two first guide rails 21 are arranged at a right
forward portion and a right rearward portion of the divided
transporting space AA2, respectively (see FIG. 1).
The two first guide rails 21 are installed to extend in the up-down
direction Z, respectively. The two first guide rails 21 are opposed
to each other in the fore-and-aft direction X. The second guide
rail 22 is supported by the pair of first guide rails 21.
Specifically, the second guide rail 22 is installed between the
pair of first guide rails 21, and extends in the fore-and-aft
direction X. The second guide rail 22 has opposite ends thereof
connected to the first guide rails 21. The second guide rail 22 is
movable in the up-down direction Z relative to the pair of first
guide rails 21. The base 23 is supported by the second guide rail
22. The base 23 is movable in the fore-and-aft direction X relative
to the second guide rail 22. The turntable 24 is supported by the
base 23. The turntable 24 is rotatable relative to the base portion
23 about a vertical axis Q parallel to the up-down direction Z. The
two hands 25 are supported by the turntable 24. Each hand 25 is
movable forward and backward along one horizontal direction
relative to the turntable 24. Each hand 25 holds one wafer W.
The main transport mechanism TA2 further includes various drive
mechanisms for moving the second guide rail 22, base 23, turntable
24 and hands 25, respectively. The various drive mechanisms
vertically move the second guide rail 22 in the up-down direction Z
move the base 23 in the fore-and-aft direction X, rotate the
turntable 24 about the vertical axis Q, and move the hands 25
forward and backward. Consequently, the hands 25 move in the
fore-and-aft direction X, width direction Y and up-down direction
Z, and rotate about the vertical axis Q. And the hands 25 access
the receivers PAbS, PAbR, PAdS and PAdR, solution treating units SU
and heat-treating units AHL, CP and PHP provided on the story
Kb.
A construction relating to gas supply to the transporting spaces AA
and AB will be described. Reference is made to FIGS. 2 and 3. The
substrate treating apparatus 1 has transporting space gas supply
devices 31A and 31B. The gas supply device 31A supplies gas to the
transporting space AA. The gas supply device 31B supplies gas to
the transporting space AB.
The gas supply device 31A has a supply fan 32A. The supply fan 32A
is installed outside the transporting space AA (e.g. on an upper
part of the treating block BA). The supply fan 32A has a primary
side thereof open to the exterior of the substrate treating
apparatus 1. The supply fan 32A has a secondary side thereof
communicating with the transporting space AA. The supply fan 32A
takes in ambient gas from outside the substrate treating apparatus
1, and sends it into the transporting space AA. Preferably, the gas
supply device 31A further includes a filter. The filter is a
chemical adsorption filter or ULPA filter (Ultra Low Penetration
Air Filter), for example. The filter is installed on the primary
side or secondary side of the supply fan 32A. With this
construction, the supply fan 32A can send clean gas into the
transporting space AA.
The gas supply device 31A has blowout units 33A1 and 33A2. The
blowout unit 33A1 blows out the gas to the divided transporting
space AA1. The blowout unit 33A1 is installed in an upper part of
the divided transporting space AA1. The blowout unit 33A1 has
openings (blowout bores) formed in a lower surface thereof for
blowing out the gas. Preferably, the blowout unit 33A1 in plan view
has substantially the same expanse as the divided transporting
space AA1. The supply fan 32A and blowout unit 33A1 are connected
by a supply pipe 34A1. Similarly, the blowout unit 33A2 blows out
gas to the divided transporting space AA2. The blowout unit 33A2 is
installed in an upper part of the divided transporting space AA2.
The blowout unit 33A2 has openings (blowout bores) formed in a
lower surface thereof for blowing out the gas. Preferably, the
blowout unit 33A2 in plan view has substantially the same expanse
as the divided transporting space AA2. The supply fan 32A and
blowout unit 33A2 are connected by a supply pipe 34A2.
The gas supply device 31B has the same construction as the gas
supply device 31A. The gas supply device 31B has a supply fan 32B
and blowout units 33B1 and 33B2. The supply fan 32B corresponds to
the supply fan 32A. The blowout units 33B1 and 33B2 correspond to
the blowout units 33A1 and 33A2, respectively.
A construction relating to gas exhaust from the transporting spaces
AA and AB will be described. The substrate treating apparatus 1 has
transporting space gas exhaust devices 36A and 36B. The exhaust
device 36A exhausts gas from the transporting space AA. The exhaust
device 36B exhausts gas from the transporting space AB.
The exhaust device 36A has suction units 37A1 and 37A2. The suction
unit 37A1 sucks gas from the divided transporting space AA1. The
suction unit 37A1 is installed in a lower part of the divided
transporting space AA1. The suction unit 37A1 is opposed to the
blowout unit 33A1 across the main transport mechanism TA1. The
suction unit 37A1 has openings (suction bores) formed in an upper
surface thereof for sucking the gas. Preferably, the suction unit
37A1 in plan view has substantially the same expanse as the divided
transporting space AA1. The suction unit 37A2 sucks gas from the
divided transporting space AA2. The suction unit 37A2 is installed
in a lower part of the divided transporting space AA2. The suction
unit 37A2 is opposed to the blowout unit 33A2 across the main
transport mechanism TA2. The suction unit 33A2 has openings
(suction bores) formed in an upper surface thereof for sucking the
gas. Preferably, the sucking unit 37A2 in plan view has
substantially the same expanse as the divided transporting space
AA2.
The gas exhaust device 36A has an exhaust fan 38A. The exhaust fan
38A is connected to the suction units 37A1 and 37A2 through an
exhaust pipe 39A. The exhaust fan 38A is installed outside the
transporting space AA (e.g. in a lower part of the treating block
BA). The exhaust fan 38A has a secondary side thereof open to the
exterior of the substrate treating apparatus 1. The exhaust fan 38A
discharges the gas from the transporting space AA outside the
substrate treating apparatus 1.
The gas exhaust device 36B has the same construction as the gas
exhaust device 36A. The gas exhaust device 36B has suction units
37B1 and 37B2 and exhaust fan 38B. The suction units 37B1 and 37B2
correspond to the suction units 37A1 and 37A2, respectively. The
exhaust fan 38B corresponds to the exhaust fan 38A.
<Detailed Construction of Solution Treating Units SU, and
Construction Relating to Gas Supply to and Gas Exhaust from
Solution Treating Units SU>
A construction of the solution treating units SU will be described.
Reference is made to FIGS. 1 and 7. FIG. 7 is a detailed side view
of the side having the solution treating units SU of the treating
section 17.
Each of the solution treating units SUa-SUh has a spin holder 41, a
cup 42, nozzle 43 and a nozzle transport mechanism 44. The nozzle
43 and nozzle transport mechanism 44 are shown in FIG. 1. The spin
holder 41 rotatably holds a wafer W. The cup 42 is disposed around
the spin holder 41. When each solution treating unit SU treats the
wafer W, the cup 42 surrounds side areas of the wafer W held by the
spin holder 41. Consequently, the cup 42 collects the treating
solution scattering from the wafer W. A plurality of (e.g. two)
cups 42 arranged in the same chamber CH adjoin each other
substantially in the horizontal direction. A plurality of nozzles
43 are movable between standby positions laterally of the cups 42
and treating positions above the wafers W. Each nozzle 43
discharges a treating solution. More particularly, the nozzles 43
of the antireflection film coating units BARC discharge the
antireflection film material. The nozzles 43 of the resist film
coating units RESIST discharge the resist film material. Each
nozzle transport mechanism 44 holds one nozzle 43 and moves the
nozzle 43 between the standby position and treating position.
The cups 42 of the solution treating units SUa, SUc, SUe and SUg
are arranged in one column extending substantially in the up-down
direction Z. The cups 42 of the solution treating units SUa, SUc,
SUe and SUg constitute a columnar group of cups 42 (hereinafter
called simply "cup group"). The cups 42 of the solution treating
units SUb, SUd, SUf and SUh are arranged in one column extending
substantially in the up-down direction Z. The cups 42 of the
solution treating units SUb, SUd, SUf and SUh constitute one cup
group.
Each of the solution treating units SUi-SUp has a spin holder 46, a
cup 47, a nozzle 48 and a nozzle transport mechanism 49. The nozzle
48 and nozzle transport mechanism 49 are shown in FIG. 1. The spin
holder 46 rotatably holds a wafer W. The cup 47 is disposed around
the spin holder 46. When each of the solution treating units
SUi-SUp treats the wafer W, the cup 47 surrounds side areas of the
wafer W held by the spin holder 46. A plurality of cups 47 arranged
in the same chamber CH adjoin each other substantially in the
horizontal direction. Each nozzle 48 discharges the developer. The
nozzle 48 is a slit nozzle, for example. Each nozzle transport
mechanism 49 moves a nozzle 48.
The cups 47 of the solution treating units SUi, SUk, SUm and SUo
are arranged in one column extending substantially in the up-down
direction Z. The cups 47 of the solution treating units SUi, SUk,
SUm and SUo constitute one cup group. The cups 47 of the solution
treating units SUj, SUl, SUn and SUp are arranged in one column
extending substantially in the up-down direction Z. The cups 47 of
the solution treating units SUj, SUl, SUn and SUp constitute one
cup group.
A construction relating to gas supply to the solution treating
units SU will be described with reference to FIGS. 7 and 8. FIG. 8
is a distribution diagram of gas supply to and gas exhaust from the
solution treating units.
The substrate treating apparatus 1 has a plurality of individual
gas supply devices 51a, 51b, . . . , 51p. The individual gas supply
devices 51a-51p are provided individually for the respective
solution treating units SUa-SUp. Each of the individual gas supply
devices 51a-51p is related to one of the solution treating units
SUa-SUp. For example, the individual gas supply device 51a
corresponds to the solution treating unit SUa. The individual gas
supply devices 51a-51p are equal in number to the solution treating
units SUa-SUp. In the following description, the individual gas
supply devices 51a, 51b, . . . , 51p, when not particularly
distinguished, will be written simply "individual gas supply
device(s) 51".
Each individual gas supply device 51 supplies gas only to one
corresponding solution treating unit SU. For example, the
individual gas supply device 51a supplies gas only to the solution
treating unit SUa corresponding to the individual gas supply device
51a. The individual gas supply device 51a does not supply gas to
the solution treating units SUb-SUp other than the solution
treating unit SUa. Each gas supply device 51 has an adjustable rate
of gas supply to the solution treating unit SU. For example, the
individual gas supply device 51a supplies gas at a variable supply
rate only to the solution treating unit SUa.
The substrate treating apparatus 1 has a plurality of blowout units
55a, 55b, . . . , 55p. The blowout units 55a-55p are individually
connected to the individual gas supply devices 51a-51p. For
example, the blowout unit 55a is connected only to the individual
gas supply device 51a. Each of the blowout units 55a-55p blows out
gas only to one solution treating unit SU. For example, the blowout
unit 55a blows out gas only to the solution treating unit SUa. The
blowout units 55a-55p are installed above the solution treating
units SUa, SUb, . . . , SUp, respectively. The blowout units
55a-55p, when not particularly distinguished, will be written
simply "blowout unit(s) 55".
The blowout units 55 are installed in the chambers CH. For example,
the blowout units 55a and 55b are installed in the chamber CHa. The
plurality of blowout units 55 installed in the same chamber CH
adjoin each other substantially in the horizontal direction. For
example, the blowout units 55a and 55b adjoin each other
substantially in the horizontal direction.
The blowout units 55a, 55c, 55e and 55g are arranged in one column
extending substantially in the up-down direction Z. The blowout
units 55a, 55c, 55e and 55g constitute a columnar group of blowout
units 55 (hereinafter called simply "blowout unit group"). The
blowout units 55b, 55d, 55f and 55h are arranged in one column
extending substantially in the up-down direction Z. The blowout
units 55b, 55d, 55f and 55h constitute one blowout unit group. The
blowout units 55i, 55k, 55m and 55o are arranged in one column
extending substantially in the up-down direction Z. The blowout
units 55i, 55k, 55m and 55o constitute one blowout unit group. The
blowout units 55j, 55l, 55n and 55p are arranged in one column
extending substantially in the up-down direction Z. The blowout
units 55j, 55l, 55n and 55p constitute one blowout unit group.
Each blowout unit group corresponds to one of the solution treating
unit groups. For example, the blowout unit group formed of the
blowout units 55a, 55c, 55e and 55g corresponds to the solution
treating unit group formed of the solution treating units SUa, SUc,
SUe and SUg. The blowout units 55a, 55c, 55e and 55g blow out gas
to the solution treating units SUa, SUc, SUe and SUg,
respectively.
Each blowout unit 55 is in the shape of a flat box. Each blowout
unit 55 has openings formed in a lower surface thereof for blowing
out the gas. Preferably, the blowout unit 55 in plan view has an
expanse for covering an area above each of the cups 42/47. In FIG.
1, the blowout units 55g, 55h, 55o and 55p are indicated in dotted
lines.
The individual gas supply devices 51a, 51b, . . . , 51p have supply
dampers 52a, 52b, . . . , 52p, respectively. The supply dampers
52a-52p adjust the rate of gas supply to the solution treating
units SU, respectively. For example, the supply damper 52a adjusts
the rate of gas supply to the solution treating unit SUa. The
supply damper 52b adjusts the rate of gas supply to the solution
treating unit SUb. Each of the supply dampers 52a-52p includes a
blade for opening and closing a gas flow path, and an air cylinder
for driving the blade, for example. Operations of the air supply
dampers 52a-52p are independent of each other.
The supply dampers 52a-52p, when not particularly distinguished,
will be written "supply damper(s) 52".
Each supply damper 52 is directly connected to the blowout unit 55.
For example, the supply damper 52a is connected to the front of the
blowout unit 55a. The supply damper 52b is connected to the rear of
the blowout unit 55b.
The supply dampers 52 are installed in the chambers CH. For
example, the supply dampers 52a and 52b are installed in the
chamber CHa.
The supply dampers 52 are an example of the gas supply adjuster in
this invention.
The individual gas supply devices 51a, 51b, . . . , 51p have supply
pipes 53a, 53b, . . . , 53p, respectively. The supply pipes 53a-53p
transmit the gas. The supply pipes 53a-53p, when not particularly
distinguished, will be written simply "supply pipe(s) 53".
One end of the gas supply pipe 53 is directly connected to the
supply damper 52. Consequently, the supply pipe 53 is indirectly
connected to the blowout unit 55 through the supply damper 52. For
example, the supply pipe 53a is connected to the blowout unit 55a
through the supply damper 52a. The supply pipe 53b is connected to
the blowout unit 55b through the supply damper 52b.
The plurality of supply pipes 53 connected respectively to the
plurality of blowout units 55 adjoining each other substantially in
the horizontal direction extend in different directions from the
blowout units 55. For example, the blowout units 55a and 55b adjoin
each other substantially in the horizontal direction. The supply
pipe 53a is connected to the blowout unit 55a. The supply pipe 53b
is connected to the blowout unit 55b. The supply pipe 53a extends
forward XF from the blowout unit 55a. The supply pipe 53b extends
backward XB from the blowout unit 55b. Thus, the direction in which
the supply pipe 53a extends from the blowout unit 55a is different
from the direction in which the supply pipe 53b extends from the
blowout unit 55b. Specifically, the direction in which the supply
pipe 53a extends from the blowout unit 55a is opposite to the
direction in which the supply pipe 53b extends from the blowout
unit 55b.
A part including one end of the supply pipe 53 is located inside
the chamber CH. For example, such part of each of the supply pipes
53a and 53b is located inside the chamber CHa.
The supply pipe 53 penetrates the chamber CH. The other part
(hereinafter called the "other end portion(s)") of the supply pipe
53 is located outside the chamber CH. The other end portion of the
supply pipe 53 includes the other end of the gas supply pipe 53. A
fluid box section BOa is provided forward XF of the chambers
CHa-CHd. The other end portions of the supply pipes 53a, 53c, 53e
and 53g are located in the fluid box section BOa. A fluid box
section BOb is provided backward XB of the chambers CHa-CHd. The
other end portions of the supply pipes 53b, 53d, 53f and 53h are
located in the fluid box section BOb. A fluid box section BOc is
provided forward XF of the chambers CHe-CHh. The other end portions
of the supply pipes 53i, 53k, 53m and 53o are located in the fluid
box section BOc. A fluid box section BOd is provided backward XB of
the chambers CHe-CHh. The other end portions of the supply pipes
53j, 53l, 53n and 53p are located in the fluid box section BOd.
The substrate treating apparatus 1 has distributing pipes 56a, 56b,
56c and 56d. The distributing pipes 56a, 56b, 56c and 56d are
provided individually for the solution treating unit groups.
Specifically, the distributing pipe 56a is related to one solution
treating unit group consisting of the solution treating units SUa,
SUc, SUe and SUg. The distributing pipe 56b is related to one
solution treating unit group consisting of the solution treating
units SUb, SUd, SUf and SUh. The distributing pipe 56c is related
to one solution treating unit group consisting of the solution
treating units SUi, SUk, SUm and SUo. The distributing pipe 56d is
related to one solution treating unit group consisting of the
solution treating units SUj, SUl, SUn and SUp.
As a result, the distributing pipe 56a is related to the solution
treating units SUa, SUc, SUe and SUg. Further, the distributing
pipe 56a is related to the individual gas supply devices 51a, 51c,
51e and 51g which supply gas to the solution treating units SUa,
SUc, SUe and SUg. The distributing pipe 56a is related to the
blowout units 55a, 55c, 55e and 55g which blow out gas to the
solution treating units SUa, SUc, SUe and SUg. The same applies
also to the other distributing pipes 56b-56d.
The distributing pipes 56a, 56b, 56c and 56d distribute the gas
only to the plurality of individual gas supply devices 51
corresponding to the solution treating unit groups, respectively.
For example, the distributing pipe 56a distributes the gas only to
the individual gas supply devices 51a, 51c, 51e and 51g. The
distributing pipe 56a does not distribute the gas to the individual
gas supply devices 51 other than the individual gas supply devices
51a, 51c, 51e and 51g. Similarly, the distributing pipe 56b
distributes the gas only to the individual gas supply devices 51b,
51d, 51f and 51h. The distributing pipe 56c distributes the gas
only to the individual gas supply devices 51i, 51k, 51m and 51o.
The distributing pipe 56d distributes the gas only to the
individual gas supply devices 51j, 51l, 51n and 51p.
The distributing pipe 56a is installed in the fluid box section
BOa. The distributing pipe 56a is connected to the supply pipes
53a, 53c, 53e and 53g. More particularly, the distributing pipe 56a
is connected to the other ends of the supply pipes 53a, 53c, 53e
and 53g. However, the distributing pipe 56a is not connected to the
supply pipes 53 other than the supply pipes 53a, 53c, 53e and 53g.
Similarly, the distributing pipe 56b is installed in the fluid box
section BOb. The distributing pipe 56b is connected to the supply
pipes 53b, 53d, 53f and 53h. The distributing pipe 56c is installed
in the fluid box section BOc. The distributing pipe 56c is
connected to the supply pipes 53i, 53k, 53m and 53o. The
distributing pipe 56d is installed in the fluid box section BOd.
The distributing pipe 56d is connected to the supply pipes 53j,
53l, 53n and 53p.
The distributing pipes 56a-56d, when not particularly
distinguished, will be written simply "distributing pipe(s)
56".
The distributing pipes 56 are installed to extend in the up-down
direction Z in positions laterally of the solution treating unit
groups corresponding to the distributing pipes 56. For example, the
distributing pipe 56a is installed to extend in the up-down
direction Z, in a position laterally (e.g. forward XF) of the
solution treating units SUa, SUc, SUe and SUg. The distributing
pipe 56b is installed to extend in the up-down direction Z in a
position laterally (e.g. backward XB) of the solution treating
units SUb, SUd, SUf and SUh.
The distributing pipe 56 has a range in the up-down direction Z
that preferably includes height positions of all the solution
treating units SU belonging to the corresponding solution treating
unit group. It is preferred, for example, that the range in the
up-down direction Z of the distributing pipe 56a covers height
positions of the solution treating units SUa, SUc, SUe and SUg.
The distributing pipe 56 is installed to extend in the up-down
direction Z, laterally of the blowout unit group corresponding to
the distributing pipe 56. For example, the distributing pipe 56a is
installed to extend in the up-down direction Z, in a position
laterally (e.g. forward XF) of the blowout units 55a 55c, 55e and
55g. The distributing pipe 56b is installed to extend in the
up-down direction Z, in a position laterally (e.g. backward XB) of
the blowout units 55b, 55d, 55f and 55h.
The distributing pipe 56 has a range in the up-down direction Z
that preferably includes height positions of all the blowout units
55 belonging to the corresponding blowout unit group. It is
preferred, for example, that the range in the up-down direction Z
of the distributing pipe 56a covers height positions of the blowout
units 55a 55c, 55e and 55g.
The substrate treating apparatus 1 further includes supply ports
57a, 57b, 57c and 57d for the distributing pipes. The supply ports
57a-57d are provided individually for the distributing pipes
56a-56d. The supply port 57a is connected to the distributing pipe
56a. The supply port 57b is connected to the distributing pipe 56b.
The supply port 57c is connected to the distributing pipe 56c. The
supply port 57d is connected to the distributing pipe 56d. The
supply ports 57a-57d are connectable to external equipment
installed outside the substrate treating apparatus 1, respectively.
The supply ports 57a-57d are arranged in a bottom surface of the
treating section 17, for example.
In this embodiment, the supply ports 57a-57d are connected to an
air flow controller 58. The air flow controller 58 is external
equipment of the substrate treating apparatus 1. The air flow
controller 58 is installed outside the substrate treating apparatus
1. The air flow controller 58 supplies gas (e.g. clean air) at an
adjusted temperature and humidity. The air flow controller 58 is an
example of external equipment (more strictly, gas supplying
external equipment) in this invention.
A construction regarding gas exhaust from the solution treating
units SU will be described with reference to FIGS. 7 and 8.
The substrate treating apparatus 1 has a plurality of individual
gas exhaust devices 61a, 61b, . . . , 61p. The individual gas
exhaust devices 61a-61p are provided individually for the
respective solution treating units SUa-SUp. Each of the individual
gas exhaust devices 61a-61p is related to one of the solution
treating units SUa-SUp. For example, the individual gas exhaust
device 61a corresponds to the solution treating unit SUa. The
individual gas exhaust devices 61a-61p are equal in number to the
solution treating units SUa-SUp. In the following description, the
individual gas exhaust devices 61a, 61b, . . . , 61p, when not
particularly distinguished, will be written simply "individual gas
exhaust device(s) 61".
Each individual gas exhaust device 61 exhausts gas only from one
corresponding solution treating unit SU. For example, the
individual gas exhaust device 61a exhausts gas only from the
solution treating unit SUa corresponding to the individual gas
exhaust device 61a. The individual gas exhaust device 61a does not
exhaust gas from the solution treating units SUb-SUp other than the
solution treating unit SUa. Each gas exhaust device 61 has an
adjustable rate of gas exhaust from the solution treating unit SU.
For example, the individual gas exhaust device 61a exhausts gas at
a variable exhaust rate only from the solution treating unit
SUa.
The individual gas exhaust devices 61a, 61b, . . . , 61p have
exhaust pipes 62a, 62b, . . . , 62p, respectively. The exhaust
pipes 62a-62p transmit the gas. The exhaust pipes 62a-62p, when not
particularly distinguished, will be written simply "exhaust pipe(s)
62".
The exhaust pipes 62a-62h are connected to the cups 42 of the
solution treating units SUa-SUh, respectively. For example, one end
of the exhaust pipe 62a is directly connected to the cup 42 of the
solution treating unit SUa. Consequently, the exhaust pipe 62a
exhausts the gas in the cup 42 of the solution treating unit SUa.
Similarly, the exhaust pipes 62i-62p are connected to the cups 47
of the solution treating units SUi-SUp, respectively.
The plurality of exhaust pipes 62 connected respectively to the
plurality of cups 42/47 adjoining each other substantially in the
horizontal direction extend in different directions from the cups
42/47. For example, the cup 42 of the solution treating unit SUa
and the cup 42 of the solution treating unit SUb adjoin each other
substantially in the horizontal direction. The exhaust pipe 62a is
connected to the cup 42 of the solution treating unit SUa. The
exhaust pipe 62b is connected to the cup 42 of the solution
treating unit SUb. The exhaust pipe 62a extends forward XF from the
cup 42 of the solution treating unit SUa. The exhaust pipe 62b
extends backward XB from the cup 42 of the solution treating unit
SUb. Thus, the direction in which the exhaust pipe 62a extends from
the cup 42 of the solution treating unit SUa is different from the
direction in which the exhaust pipe 62b extends from the cup 42 of
the solution treating unit SUb. Specifically, the direction in
which the exhaust pipe 62a extends from the cup 42 of the solution
treating unit SUa is opposite to the direction in which the exhaust
pipe 62b extends from the cup 42 of the solution treating unit
SUb.
A part including one end of the exhaust pipe 62 is located inside
the chamber CH. For example, such parts of the exhaust pipes 62a
and 62b are located inside the chamber CHa.
The exhaust pipe 62 penetrates the chamber CH. The other portion
(hereinafter called "the other end portion(s)") of the exhaust pipe
62 is located outside the chamber CH. The other end portion of the
exhaust pipe 62 includes the other end of the exhaust pipe 62. For
example, the other end portions of the exhaust pipes 62a, 62c, 62e
and 62g are located in the fluid box section BOa. The exhaust pipes
62 bend inside the fluid box sections BOa-BOd and extend
downward.
The individual gas exhaust devices 61a, 61b, . . . , 61p have
exhaust ports 63a, 63b, . . . , 63p, respectively. The exhaust
ports 63a-63p are connected to the exhaust pipes 62a-62p,
respectively. For example, the exhaust port 63a is directly
connected to the other end of the exhaust pipe 62a. The exhaust
ports 63a-63p are connectable to external equipment installed
outside the substrate treating apparatus 1. The exhaust ports
63a-63p are arranged in the bottom surface of the treating section
17, for example. The exhaust ports 63a-63p, when not particularly
distinguished, will be written simply "exhaust port(s) 63."
As described above, the individual gas exhaust devices 61a-61p are
separated from one another at least inside the substrate treating
apparatus 1. In other words, the individual gas exhaust devices
61a-61p are not connected directly or indirectly to one another at
least inside the substrate treating apparatus 1. Therefore, the gas
flow path of each of the individual gas exhaust devices 61a-61p is
maintained separate from that of the other at least inside the
substrate treating apparatus 1.
The exhaust ports 63a-63p are connected to exhaust dampers 66a-66p,
respectively. The exhaust dampers 66a-66p are external equipment of
the substrate treating apparatus 1. The exhaust dampers 66a-66p are
installed outside the substrate treating apparatus 1. For example,
the exhaust port 63a is connected to the exhaust damper 66a. The
exhaust dampers 66a-66p adjust the rate of gas exhaust from the
solution treating units SUa-SUp, respectively. For example, the
exhaust damper 66a adjusts the rate of gas exhaust from the
solution treating unit SUa. The exhaust dampers 66a-66p are
connected to a gas suction device 67. The gas suction device 67 is
external equipment of the substrate treating apparatus 1. The gas
suction device 67 is installed outside the substrate treating
apparatus 1. The gas suction device 67 is a vacuum pump, exhaust
blower or ejector, for example. The exhaust dampers 66a-66p and gas
suction device 67 are each an example of external equipment (more
strictly, gas exhausting external equipment) in this invention.
<Interface Section 19>
Reference is made to FIG. 1. The interface section 19 has
interface's transport mechanisms TIF. In this embodiment, the
interface's transport mechanisms TIF include two transport
mechanisms TIFa and TIFb. The transport mechanisms TIFa and TIFb
transport wafers W, respectively.
Reference is made to FIG. 2. The interface section 19 has receivers
PA-CP and PAgR and buffers BF. The receivers PA-CP and PAgR and
buffers BF are installed between the transport mechanism TIFa and
transport mechanism TIFb. The receiver PA-CP receives a wafer W and
cools the wafer W. The receiver PAgR only receives a wafer W. The
buffers BF can receive a plurality of wafers W.
Both the transport mechanisms TIFa and TIFb access the receivers
PA-CP and PAgR and buffers BF. The transport mechanisms TIFa and
TIFb transport wafers W reciprocally through the receivers PA-CP
and PAgR.
The transport mechanism TIFa can further access the receivers PAeS,
PAeR, PAfS and PAfR and heat-treating units PEBc and PEBd of the
treating block BB. The transport mechanism TIFa and main transport
mechanism TB1 reciprocally transfer wafers W using the receivers
PAeS and PAeR. The transport mechanism TIFa and main transport
mechanism TB2 reciprocally transfer wafers W using the receivers
PAfS and PAfR. The transport mechanism TIFa transports wafers W to
the heat-treating units PEBc and PEBd of the treating block BB.
The transport mechanism TIFb further transports wafers W to the
exposing machine EXP.
Each of the transport mechanisms TIFa and TIFb has two hands 71 for
holding wafers W, and hand drive mechanisms 72 for driving the
respective hands 71. Each hand 71 holds one wafer W. The hand drive
mechanism 72 moves the hand 71 in the fore-and-aft direction X,
width direction Y and up-down direction Z, and rotates the hand 72
about the up-down direction Z. Consequently, each hand 71 accesses
various receivers and the like.
<Construction of Control System>
Reference is made to FIG. 9. FIG. 9 is a control block diagram of
the substrate treating apparatus 1. The substrate treating
apparatus 1 further includes a controller 75.
The controller 75 is installed in the indexer section 11, for
example. The controller 75 performs overall control of the
substrate treating apparatus 1. Specifically, the controller 75
controls the transport mechanisms TID, TA1, TA2, TB1, TB2, TIFa and
TIFb, solution treating units SU, heat-treating units AHL, PHP, CP
and PEB, edge exposing units EEW, supply fans 32A and 32B, exhaust
fans 38A and 38B, and supply dampers 52a-52p. Further, the
controller 75 may control the external equipment. For example, the
controller 75 may control the air flow controller 58, exhaust
dampers 66a-66p and gas suction device 67.
The controller 75 is realized by a central processing unit (CPU)
which performs various processes, a RAM (Random-Access Memory)
which provides working space for arithmetic processing, and a
storage medium such as a fixed disk. The storage medium stores
various information such as treatment recipes (processing programs)
for treating wafers W and information for identifying each wafer
W.
<Examples of Operation>
Next, examples of operation of the substrate treating apparatus
according to the embodiment will be described. Here, examples of
operation of the substrate treating apparatus will be described as
divided into three operations:
1. Operation relating to transportation of wafers W and treatment
of wafers W
2. Operation relating to gas supply to and gas exhaust from
transporting spaces AA and AB
3. Operation relating gas supply to and gas exhaust from solution
treating units SU
1. Operation relating to transportation of wafers W and treatment
of wafers W
FIG. 10 is a view illustrating transport routes of wafers W. In
FIG. 10, the wafers W are transported from top to bottom. Each
wafer W moves forward and backward between the carrier C (indexer
section 11) and the exposing machine EXP. The section from the
carrier C (indexer section 11) to the exposing machine EXP is
called "outgoing course". The section from the exposing machine EXP
to the carrier C (indexer section 11) is called "incoming course".
Operation relating to the transportation and treatment of the
wafers will be described hereinafter as divided into the outgoing
course and the incoming course.
For expediency, the solution treating units SUa, SUb, SUe and SUf
will be called "antireflection film coating units SUa, SUb, SUe and
SUf". The solution treating units SUc, SUd, SUg and SUh will be
called "resist film coating units SUc, SUd, SUg and SUh". The
solution treating units SUi-SUp will be called "developing units
SUi-SUp". The heat-treating units AHL, CP, PHP and PEB will be
called "hydrophobizing units AHL", "cooling units CP", "heating and
cooling units PHP" and "post-exposure heat-treating units PEB",
respectively.
1-1. Outgoing Course
In the indexer section 11, the indexer's transport mechanism TID
transports wafers W from a carrier C alternately to the receiver
PAaS and receiver PAbS. For example, the indexer's transport
mechanism TID repeats alternately operation to transport one wafer
W from a carrier C to the receiver PAaS, and operation to transport
one wafer W from the carrier C to the receiver PAbS.
On the story Ka, the main transport mechanism TA1 receives the
wafer W on the receiver PAaS, and transports the wafer W to the
respective treating units in a predetermined order. The
predetermined order is as follows, for example (see FIG. 10):
Example of predetermined order: hydrophobizing unit
AHLa.fwdarw.cooling unit CPa.fwdarw.antireflection film coating
unit SUa/SUb.fwdarw.heating and cooling unit PHPa.fwdarw.cooling
unit CPa.fwdarw.resist film coating unit SUc/SUd.fwdarw.heating and
cooling unit PHPa.fwdarw.cooling unit CPa
Each treating unit performs treatment of to the wafer W. For
example, the hydrophobizing unit AHL performs hydrophobizing
treatment. The cooling unit CP performs cooling treatment. The
antireflection film coating unit SUa/SUb performs antireflection
film forming treatment. The resist film coating unit SUc/SUd
performs resist film forming treatment. Through the series of these
treatments, antireflection film and resist film are formed on the
wafer W. The main transport mechanism TA1 transports the wafer W
having undergone the series of treatments to the receiver PAcS.
An example of operation of the solution treating units SUa-SUd will
be described in detail. The main transport mechanism TA1 places the
wafer W on the spin holder 41. The spin holder 41 holds the wafer
W. The cup 42 surrounds side areas of the wafer W on the spin
holder 41. The spin holder 41 spins the wafer W in a horizontal
position. The nozzle transport mechanism 44 moves one nozzle 43 to
the position above the wafer W. The nozzle 43 supplies the treating
solution (antireflection film material/resist film material) to the
wafer W. The supplied treating solution spreads all over the wafer
W. The cup 42 collects the treating solution scattering around from
the wafer W. In this way, the antireflection film and resist film
are formed on the wafer W.
An example of operation of the main transport mechanism TA1 will be
described in detail. FIG. 11 is a view illustrating an order in
which each transport mechanism accesses the receivers and treating
units. The main transport mechanism TA1 accesses the receivers and
treating units in the predetermined order. And the main transport
mechanism TA1 replaces one wafer W in each treating unit with
another.
For example, the main transport mechanism TA1 holds the wafer W
received from the receiver PAaS, and accesses the hydrophobizing
unit AHLa. The main transport mechanism TA1 unloads a treated wafer
W from the hydrophobizing unit AHLa, and loads the wafer W received
from the receiver PAaS into the hydrophobizing unit AHLa. Then, the
main transport mechanism TA1 holds the wafer W unloaded from the
hydrophobizing unit AHLa, and accesses the cooling unit CPa. The
main transport mechanism TA1 unloads a treated wafer W from the
cooling unit CPa, and puts the wafer W unloaded from the
hydrophobizing unit AHLa into the cooling unit CPa. Then, the main
transport mechanism TA1 holds the wafer W unloaded from the cooling
unit CPa, and accesses the antireflection film coating unit SUa.
The main transport mechanism TA1 replaces a treated wafer W in the
antireflection film coating unit SUa with the wafer W unloaded from
the cooling unit CPa. Subsequently, the main transport mechanism
TA1 accesses the heating and cooling unit PHPa, cooling unit CPa,
resist film coating unit SUc, heating and cooling unit PHPa,
cooling unit CPa, receiver PAcS, receiver PAcR and receiver PAaR in
this order. The above is a series of operations of the main
transport mechanism TA1.
After the main transport mechanism TA1 carries out the series of
operations, the main transport mechanism TA1 carries out a series
of operations again. However, in the next series of operation, the
main transport mechanism TA1 accesses the antireflection film
coating unit SUb instead of the antireflection film coating unit
SUa, and accesses the resist film coating unit SUd instead of the
resist film coating unit SUc.
The main transport mechanism TA1 accesses the antireflection film
coating units SUa and SUb alternately. Therefore, the timing of the
main transport mechanism TA1 accessing the antireflection film
coating unit SUa is shifted from the timing of the main transport
mechanism TA1 accessing the antireflection film coating unit SUb.
In other words, the timing of the main transport mechanism TA1
changing the wafers W in the antireflection film coating unit SUa
is shifted from the timing of the main transport mechanism TA1
changing the wafers W in the antireflection film coating unit SUb.
FIG. 11 schematically shows a lag time .DELTA.ta between the
antireflection film coating units SUa and SUb.
As a result, the operation of the antireflection film coating unit
SUa to perform the solution treatment is shifted in time from the
operation of the antireflection film coating unit SUb to perform
the solution treatment. In other words, the periods when the
antireflection film coating units SUa and SUb perform the solution
treatment are not in agreement but are different. The operation of
the antireflection film coating unit SUa to be on standby is also
shifted in time from the operation of the antireflection film
coating unit SUb to be on standby.
Similarly, the main transport mechanism TA1 accesses the resist
film coating units SUc and SUd alternately. Therefore, a shift
occurs with the timing of the main transport mechanism TA1
accessing the resist film coating units SUc and SUd. FIG. 11
schematically shows a lag time .DELTA.tb between the resist film
coating units SUc and SUd.
As a result, the operations of the resist film coating units SUc
and SUd are shifted in time. The operation of the antireflection
film coating unit SUa is shifted in time also with respect to the
operations of the resist film coating units SUc and SUd. The
operation of the antireflection film coating unit SUb is also
shifted in time with respect to the operations of the resist film
coating units SUc and SUd.
On the story Kc, the main transport mechanism TB1 transports a
wafer W from the receiver PAcS to the edge exposing unit EEWc. The
edge exposing unit EEWc exposes edge portions of the wafer W. The
main transport mechanism TB1 transports the wafer W with the edge
portions exposed, from the edge exposing unit EEWc to the receiver
PAeS.
The stories Kb and kd carry out the same operations as the stories
Ka and Kc. That is, the main transport mechanism TA2 receives the
wafer W from the receiver PAbS, and transports the wafer W to the
respective treating units in the predetermined order. Each treating
unit performs treatment of the wafer W. Consequently,
antireflection film and resist film are formed on the wafer W. The
main transport mechanism TA2 transports the wafer W having
undergone a series of treatments to the receiver PAdS. The main
transport mechanism TB2 transports a wafer W from the receiver PAdS
to the edge exposing unit EEWd. The edge exposing unit EEWd exposes
the edge portions of the wafer W. The main transport mechanism TB2
transports the wafer W with the edge portions exposed from the edge
exposing unit EEWd to the receiver PAfS. The operations of the
stories Kb and kd are carried out in parallel to the operations of
the stories Ka and Kc.
Here, a shift occurs with the timing of the main transport
mechanism TA2 accessing the antireflection film coating units SUe
and SUf FIG. 11 shows, by way of example, a lag time .DELTA.tc
between the antireflection film coating units SUe and SUf.
Similarly, a shift occurs with the timing of the main transport
mechanism TA2 accessing the resist film coating units SUg and SUh.
FIG. 11 shows, by way of example, a lag time .DELTA.td between the
resist film coating units SUg and SUh.
The transport mechanism TIFa transports wafers W from the receivers
PAcS and PAdS to the receiver PA-CP. The transport mechanism TIFb
transports the wafers W from the receiver PA-CP to the exposing
machine EXP. The exposing machine EXP performs exposing treatment
of the wafers W.
1-2. Incoming Course
The transport mechanism TIFb transports wafers W from the exposing
machine EXP to the receiver PAgR. The transport mechanism TIFa
transports the wafers W from the receiver PAgR to the post-exposure
heating units PEBc and PEBd. The post-exposure heating units PEBc
and PEBd perform post-exposure heating treatment of the wafers W.
The transport mechanism TIFa transports the wafers W having
undergone the post-exposure heating treatment from the
post-exposure heating units PEBc and PEBd to the receiver PAeR and
PAfR.
On the story Kc, the main transport mechanism TB1 receives the
wafers W on the receiver PAeR, and transports the wafers W to the
respective treating units in a predetermined order. The
predetermined order is as follows, for example:
Example of the predetermined order: cooling unit
CPc.fwdarw.developing unit SUi/SUj/SUk/SUl.fwdarw.heating and
cooling unit PHPc.fwdarw.cooling unit CPc
Each treating unit treats the wafers W. For example, the developing
units SUi, SUj, SUk and SUl perform developing treatment. The
cooling units CP perform cooling treatment. The wafers W are
developed through a series of these treatments. The main transport
mechanism TB1 transports the wafers W having undergone the series
of treatments to the receiver PAcR.
An example of operation of the developing units SUi-SUl will be
described in detail. The main transport mechanism TB1 places a
wafer W on the spin holder 46. The spin holder 46 holds the wafer
W. The cup 47 surrounds side areas of the wafer W on the spin
holder 46. The nozzle transport mechanism 49 moves a nozzle 48 to
the position above the wafer W. The nozzle 48 supplies the treating
solution (developer) to the wafer W. At this time, the spin holder
46 may spin the wafer W as appropriate. The cup 47 collects the
developer scattering from the wafer W. In this way, the wafer W is
developed.
The main transport mechanism TB1 accesses the developing units SUi,
SUj, SUk and SUl by turns. Therefore, shifts occur in the timing of
the main transport mechanism TB1 accessing the developing units
SUi, SUj, SUk and SUl. FIG. 11 shows, by way of example, a lag time
.DELTA.te between the developing units SUi and SUj, a lag time
.DELTA.tf between the developing units SUj and SUk, and a lag time
.DELTA.tg between the developing units SUk and SUl. As a result,
each operation of the developing units SUi, SUj, SUk and SUl is
shifted in time.
On the story Ka, the main transport mechanism TA1 transports wafers
W from the receiver PAcR to the receiver PAaR.
The stories Kd and kb carry out similar operations to the stories
Kc and Ka. The operations of the stories Kd and kb are carried out
in parallel to the operations of the stories Kc and Ka.
Here, shifts occur in the timing of the main transport mechanism
TB2 accessing the developing units SUm, SUn, SUo and SUp. FIG. 11
shows, by way of example, a lag time .DELTA.th between the
developing units SUm and SUn, a lag time .DELTA.ti between the
developing units SUn and SUo, and a lag time .DELTA.tj between the
developing units SUo and SUp.
The indexer's transport mechanism TID receives the wafers W from
the receivers PAaR and PAbR alternately, and transports the wafers
W to a carrier C.
2. Operation Relating to Gas Supply to and Gas Exhaust from
Transporting Spaces AA and AB
When the operation relating to transportation of the wafers W and
treatment of the wafers W is carried out, the transporting space
gas supply devices 31A and 31B supply gas to the transporting
spaces AA and AB, respectively, and the transporting space gas
exhaust devices 36A and 36B exhaust gas from the transporting
spaces AA and AB, respectively.
Specifically, the supply fan 32A draws in gas (e.g. clean air) from
above the substrate treating apparatus 1, and sends the gas to the
blowout units 33A1 and 33A2. The blowout units 33A1 and 33A2 blow
out the gas to the divided transporting spaces AA1 and AA2,
respectively. Similarly, the supply fan 32B sends gas to the
blowout units 33B1 and 33B2. The blowout units 33B1 and 33B2 blow
out the gas to the divided transporting spaces AB1 and AB2,
respectively.
The suction units 37A1 and 37A2 suck gas from the divided
transporting spaces AA1 and AA2, respectively. The exhaust fan 38A
discharges the gas sucked by the suction units 37A1 and 37A2 out of
the substrate treating apparatus 1. Similarly, the gas in the
divided transporting spaces AB1 and AB2 is discharged by the
suction units 37B1 and 37B2 and exhaust fan 38B out of the
substrate treating apparatus 1.
Each operation of the transporting space gas supply device 31A and
transporting space gas exhaust device 36A produces downward gas
flows in the divided transporting spaces AA1 and AA2. That is,
downflows are formed in the divided transporting spaces AA1 and
AA2. Similarly, each operation of the transporting space gas supply
device 31B and transporting space gas exhaust device 36B forms
downflows in the divided transporting spaces AB1 and AB2.
3. Operation Relating to Gas Supply to and Gas Exhaust from
Solution Treating Units SU
When the operation relating to transportation of the wafers W and
treatment of the wafers W are carried out, the individual gas
supply devices 51a, 51b, . . . , 51p supply gas to the solution
treating units SUa-SUp, respectively, and the individual gas
exhaust devices 61a-61p discharge gas from the solution treating
units SUa-SUp, respectively.
Specifically, the air flow controller 58 supplies gas at the
adjusted temperature and humidity to the distributing pipes 56a-56d
through the supply ports 57a-57d. The distributing pipes 56a-56d
distribute the gas to the individual gas supply devices 51a-51p,
respectively. The gas supply devices 51a-51p supply the gas to the
solution treating units SUa-SUp, respectively. Specifically, the
supply pipes 53a-53p send the gas to the blowout units 55a-55p
through the supply dampers 52a-52p. The supply dampers 52a-52p
adjust the rate of gas supply to the solution treating units SU,
respectively. Each operation of the supply dampers 52a-52p is
independent of the other. The blowout units 55a-55p blow out the
gas to the solution treating units SUa-SUp.
The individual gas exhaust devices 61a-61p discharge gas from the
respective solution treating units SUa-SUp out of the substrate
treating apparatus 1. Specifically, the exhaust pipes 62a-62p and
exhaust ports 63a-63p discharge the gas in the cups 42/47 of the
solution treating units SUa-SUp out of the substrate treating
apparatus 1. The rates of gas exhaust from the solution treating
units SUa-SUp are adjusted by the exhaust dampers 66a-66p,
respectively.
Reference is made to FIG. 12. FIG. 12 is a timing chart
illustrating a relationship between operations of the solution
treating units SUa and SUb, rates of gas supply and exhaust
relating to the solution treating unit SUa, and rates of gas supply
and exhaust relating to the solution treating unit SUb. For
expediency, FIG. 12 shows, together in one graph, the rates of gas
supply and exhaust relating to the solution treating unit SUa.
Similarly, FIG. 12 shows, together in one graph, the rates of gas
supply and exhaust relating to the solution treating unit SUb.
The solution treating unit SUa is engaged in the solution treatment
of wafers W for a period of time t3-t7 and a period after time t9.
The solution treating unit SUa stands by (with no solution
treatment) for periods of time t1-t3 and t7-t9. While the solution
treating unit SUa stands by, the wafers W are changed in the
solution treating unit SUa. On the other hand, the solution
treating unit SUb is engaged in the solution treatment of wafers W
for a period up to time t4 and a period after time t6. The solution
treating unit SUb stands by (with no solution treatment) for a
period of time t4-t6. There occurs a lag time .DELTA.ta between the
operations of the solution treating units SUa and SUb. The lag time
.DELTA.ta corresponds to a period of time t3-t6, for example.
The controller 75, by controlling the supply damper 52a and exhaust
damper 66a, adjusts the rate of gas supply to the solution treating
unit SUa and the rate of gas exhaust from the solution treating
unit SUa.
For example, when the solution treating unit SUa starts solution
treatment (times t3 and t9), the rate of gas supply and the rate of
gas exhaust to/from the solution treating unit SUa are increased
from a low flow rate QL to a high flow rate QH. The low flow rate
QL is zero or higher, for example. The high flow rate QH is higher
than the low flow rate QL. Further, while the solution treating
unit SUa is engaged in the solution treatment, the rate of gas
supply and the rate of gas exhaust to/from the solution treating
unit SUa are reduced from the high flow rate QH to a medium rate
QM. For example, upon lapse of a predetermined time .DELTA.ts (time
t5) from when the solution treating unit SUa starts the solution
treatment, the rate of gas supply and the rate of gas exhaust
to/from the solution treating unit SUa are reduced from the high
flow rate QH to the medium flow rate QM. The medium flow rate QM is
lower than the high flow rate QH and higher than the low flow rate
QL. When the solution treating unit SUa finishes the solution
treatment (times t1 and t7), the rate of gas supply and the rate of
gas exhaust are reduced from the medium flow rate QM to the low
flow rate QL.
On the other hand, the controller 75, by controlling the supply
damper 52b and exhaust damper 66b, adjusts the rate of gas supply
to the solution treating unit SUb and the rate of gas exhaust from
the solution treating unit SUb.
For example, the relationship between the operation of the solution
treating unit SUb and the rate of gas supply and the rate of gas
exhaust to/from the solution treating unit SUb is the same as the
relationship between the operation of the solution treating unit
SUa and the rate of gas supply and the rate of gas exhaust to/from
the solution treating unit SUa. That is, when the solution treating
unit SUb starts solution treatment (time t6), the rate of gas
supply and the rate of gas exhaust to/from the solution treating
unit SUb are increased from the low flow rate QL to the high flow
rate QH. Upon lapse of the predetermined time .DELTA.ts (time t8)
from when the solution treating unit SUb starts the solution
treatment, the rate of gas supply and the rate of gas exhaust
to/from the solution treating unit SUb are reduced from the high
flow rate QH to the medium flow rate QM. When the solution treating
unit SUb finishes the solution treatment (time t4), the rate of gas
supply and the rate of gas exhaust are reduced from the medium flow
rate QM to the low flow rate QL.
Effects
According to this embodiment, as described above, the individual
gas supply devices 51 allow the rates of gas supply to the solution
treating units SU to be changed for each solution treating unit SU.
For example, the rates of gas supply to the solution treating units
SUa and SUb can be made different, or the rates of gas supply to
the solution treating units SUa and SUb can be made equal.
Consequently, an appropriate quantity of gas can be supplied in
appropriate timing to each solution treating unit SU. Therefore,
treatment quality in each solution treating unit SU can be improved
conveniently.
Particularly, even where a plurality of solution treating units SU
are arranged in the same chamber CH to perform the same type of
solution treatment, the individual gas supply devices 51 can adjust
the rate of gas supply to each solution treating unit SU.
Consequently, the treatment quality of each solution treating unit
SU can be improved further conveniently.
The individual gas supply devices 51 with the supply dampers 52 can
conveniently adjust the rate of gas supply to the solution treating
units SU.
The substrate treating apparatus 1 with the distributing pipe 56a
can easily uniform the shape, size, direction and so on of the
individual gas supply devices 51, among the individual gas supply
devices 51a, 51c, 51e and 51g. Specifically, the shape, size,
direction and so on of the supply pipes 53 may easily be unified
among the gas supply pipes 53a, 53c, 53e and 53g. Further, the
arrangement of the supply pipes 53 and supply dampers 52 can easily
be unified among the individual gas supply devices 51a, 51c, 51e
and 51g.
As a result, the rates of gas supply can be prevented conveniently
from interfering with one another among the individual gas supply
devices 51a, 51c, 51e and 51g. For example, the rate of gas supply
from the individual gas supply device 51a may be prevented
conveniently from causing variations in the rates of gas supply
from the other individual gas supply devices 51c, 51e and 51g. When
the rate of gas supply from the individual gas supply device 51a is
changed intentionally, for example, this change can be prevented
conveniently from inadvertently varying the rates of gas supply
from the other individual gas supply devices 51c, 51e and 51g. This
can conveniently improve the treatment quality in the solution
treating units SUa, SUc, SUe and SUg relating to the distributing
pipe 56a.
Similarly, the substrate treating apparatus 1 with the distributing
pipes 56b, 56c and 56d can easily uniform the shape, size,
direction and so on of the individual gas supply devices 51. As a
result, the rates of gas supply can be prevented conveniently from
interfering with one another among the individual gas supply
devices 51. This can conveniently improve the treatment quality in
the solution treating units SU.
The distributing pipe 56a is installed to extend in the up-down
direction Z, in a position laterally of the solution treating unit
group consisting of the solution treating units SUa, SUc, SUe and
SUg. Therefore, the solution treating units SUa, SUc, SUe and SUg
are located substantially in the same direction relative to the
distributing pipe 56a. Further, the solution treating units SUa,
SUc, SUe and SUg are spaced substantially the same distance from
the distributing pipe 56a. Therefore, the shape, size, direction
and so on of the individual gas supply devices 51 can be uniformed
with increased ease among the individual gas supply devices 51a,
51c, 51e and 51g corresponding to the solution treating units SUa,
SUc, SUe and SUg.
Similarly, the distributing pipes 56b, 56c and 56d are installed to
extend in the up-down direction Z, in positions laterally of the
corresponding solution treating unit groups, respectively.
Therefore, the shape, size, direction and so on of the individual
gas supply devices 51 can be uniformed with increased ease.
The range in the up-down direction Z of the distributing pipes 56
covers the height positions of all the solution treating units SU
belonging to the corresponding solution treating unit groups.
Therefore, the shape, size, direction and so on of the individual
gas supply devices 51 can be uniformed with increased ease.
The distributing pipe 56a is installed to extend in the up-down
direction Z, laterally of the blowout unit group consisting of the
blowout units 55a, 55c, 55e and 55g. Therefore, the blowout units
55a, 55c, 55e, and 55g are located substantially in the same
direction relative to the distributing pipe 56a. Further, the
blowout units 55a, 55c, 55e, and 55g are spaced substantially the
same distance from the distributing pipe 56a. Therefore, the shape,
size, direction and so on of the individual gas supply devices 51
can be uniformed with increased ease among the individual gas
supply devices 51a, 51c, 51e and 51g corresponding to the blowout
units 55a, 55c, 55e, and 55g.
Similarly, the distributing pipes 56b, 56c and 56d are installed to
extend in the up-down direction Z, in positions laterally of the
corresponding blowout unit groups, respectively. Therefore, the
shape, size, direction and so on of the individual gas supply
devices 51 can be uniformed with increased ease.
The range in the up-down direction Z of the distributing pipes 56
covers the height positions of all the blowout units 55 belonging
to the corresponding blowout unit groups. Therefore, the shape,
size, direction and so on of the individual gas supply devices 51
can be uniformed with increased ease.
The same distributing pipe 56 does not distribute gas to the
plurality of individual gas supply devices 51 corresponding to the
solution treating units SU arranged to adjoin each other
substantially in the horizontal direction. For example, the
solution treating units SUa and SUb are arranged to adjoin each
other substantially in the horizontal direction. The solution
treating unit SUa corresponds to the individual gas supply device
51a. The solution treating unit SUb corresponds to the individual
gas supply device 51b. The distributing pipe 56a distributes gas to
the individual gas supply device 51a. The distributing pipe 56b
distributes gas to the individual gas supply device 51b. Thus, the
same distributing pipe 56 does not distribute gas to both of the
individual gas supply devices 51a and 51b. The rates of gas supply
to the treating units SUa and SUb can therefore be prevented
conveniently from interfering with each other. This can
conveniently improve the treatment quality in the solution treating
units SUa and SUb. Thus, even where a plurality of solution
treating units SU are arranged to adjoin each other substantially
in the horizontal direction, the treatment quality of the solution
treating units SU can be improved conveniently.
Since the distributing pipe 56 distribute gas to the plurality of
(e.g. four) individual gas supply devices 51, the individual gas
supply devices 51 can be reduced in size. Consequently, the
installation space for the individual gas supply devices 51 can be
reduced.
The substrate treating apparatus 1, with the plurality of blowout
units 55 each of which blows out gas only to one solution treating
unit SU, can conveniently supply the gas to each solution treating
unit SU.
Since the individual gas supply devices 51 have the supply pipes
53, the individual gas supply devices 51 can conveniently send the
gas to the solution treating units SU. Further, since the
individual gas supply devices 51 have the supply pipes 53, the
individual gas supply devices 51 can conveniently be connected to
the blowout units 55. Consequently, the individual gas supply
devices 51 can conveniently send the gas to the blowout units
55.
The plurality of supply pipes 53, which are respectively connected
to the plurality of blowout units 55 adjoining each other
substantially in the horizontal direction, extend in different
directions from the blowout units 55. Consequently, the plurality
of individual gas supply devices 51 can conveniently be prevented
from approaching each other. This can prevent with increased
convenience interference in the rate of gas supply between the
plurality of individual gas supply devices 51. As a result, even
where the plurality of solution treating units SU are arranged to
adjoin each other substantially in the horizontal direction, the
treatment quality of the solution treating units SU can be improved
conveniently.
The substrate treating apparatus 1 with the individual gas exhaust
devices 61 can change the rate of gas exhaust from each solution
treating unit SU. For example, the rates of gas exhaust from the
solution treating units SUa and SUb can be made different, or the
rates of gas exhaust from the solution treating units SUa and SUb
can be made equal. Consequently, an appropriate quantity of gas can
be discharged in appropriate timing from each solution treating
unit SU. Therefore, the treatment quality in each solution treating
unit SU can be improved conveniently.
Particularly, even where a plurality of solution treating units SU
are arranged in the same chamber CH to perform the same type of
solution treatment, the individual gas exhaust devices 61 adjust
the rate of gas exhaust for each solution treating unit SU.
Consequently, the treatment quality of each solution treating unit
SU can be improved further conveniently.
The plurality of individual gas exhaust devices 61 are separated
from one another at least inside the substrate treating apparatus
1. In other words, the gas flow paths of the individual gas exhaust
devices 61a-61p are not connected to one another at least inside
the substrate treating apparatus 1. Therefore, the rate of gas
exhaust can be adjusted conveniently for each individual gas
exhaust device 61 by using external equipment that adjusts the rate
of gas exhaust (e.g. the exhaust dampers 66a-66p). Consequently,
the treatment quality in the solution treating units SU can be
improved conveniently.
Since the plurality of individual gas exhaust devices 61 are
separated from one another at least inside the substrate treating
apparatus 1, the rates of gas exhaust can be prevented conveniently
from interfering with one another among the individual gas exhaust
devices 61. For example, the rate of gas exhaust from part of the
individual gas exhaust devices 61 can be prevented conveniently
from causing variations in the rates of gas exhaust from the other
individual gas exhaust devices 61. When the rate of gas exhaust
from the individual gas exhaust device 61a is changed
intentionally, for example, this change can be prevented
conveniently from inadvertently varying the rates of gas exhaust
from the individual gas exhaust devices 61 other than the
individual gas exhaust device 61a. This can conveniently improve
the treatment quality in the solution treating units SU.
Since the individual gas exhaust devices 61 have the exhaust ports
63, the individual gas exhaust devices 61 can easily be connected
to external equipment (e.g. the exhaust dampers 66a-66p and gas
suction device 67).
The individual gas exhaust devices 61 with the exhaust pipes 62 can
conveniently send the gas discharged from the solution treating
units SU to the external equipment.
The individual gas exhaust devices 61 can discharge the gas in the
cups 42/47 of the corresponding solution treating units SU.
Consequently, the individual gas exhaust devices 61 can discharge
the gas conveniently from the solution treating units SU.
Since the individual gas exhaust devices 61 have the exhaust pipes
62, the individual gas exhaust device 61 can discharge gas
conveniently from the solution treating units SU. Further, since
the individual gas exhaust devices 61 have the exhaust pipes 62,
the individual gas exhaust devices 61 can be connected conveniently
to the cups 42/47. Consequently, the individual gas exhaust devices
61 can discharge gas with increased convenience from the solution
treating units SU.
The plurality of exhaust pipes 62, which are respectively connected
to the plurality of cups 42/47 adjoining each other substantially
in the horizontal direction, extend in different directions from
the cups 42/47. Consequently, the plurality of individual gas
exhaust devices 61 can conveniently be prevented from approaching
each other. This can conveniently prevent interference in the rate
of gas exhaust between the plurality of individual gas exhaust
devices 61. As a result, even where the plurality of solution
treating units SU are arranged to adjoin each other substantially
in the horizontal direction, the treatment quality of the solution
treating units SU can be improved conveniently.
The substrate treating apparatus 1 has the controller 75 which
controls individually the rate of gas supply to each solution
treating unit SU. The quality of each solution treating unit SU in
performing the solution treatment of wafers W can therefore be
improved conveniently.
The controller 75 adjusts individually the rate of gas supply to
the solution treating units SU according to operation of the
solution treating units SU. For example, the controller 75 changes
the rate of gas supply to the solution treating units SU, depending
on whether the solution treating units SU are engaged in the
solution treatment or they are on standby. More particularly, the
controller 75 changes individually the rate of gas supply to the
solution treating units SU at starting time and finishing time of
the solution treatment. The controller 75 changes individually the
rate of gas supply to the solution treating units SU at starting
time and finishing time of the standby. Consequently, the treatment
quality of each solution treating unit can be improved with
increased convenience.
The controller 75 changes the rate of gas supply to the solution
treating units SU while the solution treating units SU are engaged
in the solution treatment. In other words, the rate of gas supply
to the solution treating units SU is not constant over a period in
which the solution treating units SU are engaged in the solution
treatment. Thus, while the solution treating units SU are engaged
in the solution treatment, an appropriate quantity of gas can be
supplied in appropriate timing to the solution treating units. The
treatment quality of the solution treating units SU can therefore
be improved with increased convenience.
The controller 75 adjusts the rate of gas supply to the solution
treating units SU based on an elapsed time from a starting time of
the solution treatment. This realizes an appropriate quantity of
gas being supplied in appropriate timing to the solution treating
units SU.
The controller 75 controls individually the rate of gas exhaust
from each solution treating unit SU. The quality of each solution
treating unit SU in performing the solution treatment of wafers W
can therefore be improved conveniently.
The controller 75 adjusts individually the rate of gas exhaust from
the solution treating units SU according to operation of the
solution treating units SU. Consequently, the treatment quality of
each solution treating unit can be improved with increased
convenience.
The controller 75 changes the rate of gas exhaust from the solution
treating units SU while the solution treating units SU are engaged
in the solution treatment. Consequently, the treatment quality of
each solution treating unit SU can be improved with increased
convenience.
The controller 75 adjusts the rate of gas exhaust from the solution
treating units SU based on an elapsed time from a starting time of
the solution treatment. This realizes an appropriate quantity of
gas being exhausted in appropriate timing from the solution
treating units SU.
This invention is not limited to the foregoing embodiment, but may
be modified as follows:
(1) In the embodiment, the substrate treating apparatus 1 has the
distributing pipes 56. The invention is not limited to this. For
example, the distributing pipes 56 may be omitted. In the
embodiment, a plurality of individual gas supply devices 51 are
indirectly connected through the distributing pipes 56 inside the
substrate treating apparatus 1. The invention is not limited to
this. For example, the individual gas supply devices 51 may be
separated from one another at least inside the substrate treating
apparatus 1.
Reference is made to FIG. 13. FIG. 13 is a detailed side view
showing individual gas supply devices and individual gas exhaust
devices according to a modified embodiment. For expediency, FIG. 13
shows only individual gas supply devices 51 and individual gas
exhaust devices 61 relating to the solution treating units SUa-SUh.
Components identical to those of the embodiment are shown with the
same signs, and will not particularly be described.
As shown, the individual gas supply device Ma has a damper 52a, a
supply pipe 53a and a supply port 81a. Similarly, the individual
gas supply devices 51b-51h respectively have dampers 52b-52h,
supply pipes 53b-53h and supply ports 81b-81h.
The supply pipes 53a-53h each have one end thereof directly
connected to the blowout units 55a-55h. The supply dampers 52a-52h
are mounted in intermediate positions of the supply pipes 53a-53h.
The supply dampers 52a-52h are arranged outside the chambers CH.
The other end of each supply pipe 53a-53h is connected to one of
the supply ports 81a-81h. The supply ports 81a-81h are connectable
to external equipment installed outside the substrate treating
apparatus 1. The supply ports 81a-81h are arranged, for example, in
the bottom surface of the substrate treating apparatus 1. The
supply ports 81a-81h are connected to the air flow controller 58
which is external equipment.
According to this modified embodiment, the individual gas supply
devices 51a-51h are separated from one another at least inside the
substrate treating apparatus 1. In other words, the plurality of
individual gas supply devices 51 are not connected directly or
indirectly to one another at least inside the substrate treating
apparatus 1. The gas flow paths of the gas supply devices 51a-51h
are therefore maintained in a mutually separated state at least
inside the substrate treating apparatus 1. It is therefore possible
to effectively prevent interference of the rates of gas supply
among the plurality of gas supply devices 51a-51h. Consequently,
the treatment quality in each solution treating unit SU can be
improved conveniently.
Since, in this modified embodiment, the individual gas supply
devices 51a-51h have the supply ports 81a-81h, the individual gas
supply devices 51a-51h can easily be connected to the external
equipment.
(2) In the embodiment, the individual gas supply devices 51 have
the supply dampers 52. The invention is not limited to this. For
example, the individual gas supply devices 51 do not need to have
the supply dampers 52.
Reference is made to FIG. 14. FIG. 14 is a detailed side view
showing the individual gas supply devices and individual gas
exhaust devices according to a modified embodiment. For expediency,
FIG. 14 shows only individual gas supply devices 51 and individual
gas exhaust devices 61 relating to the solution treating units
SUa-SUh. Components identical to those of the embodiment are shown
with the same signs, and will not particularly be described.
As shown, the individual gas supply device 51a has a supply pipe
53a and a supply port 81a. Similarly, the individual gas supply
devices 51b-51h respectively have supply pipes 53b-53h and supply
ports 81b-81h. The individual gas supply devices 51a-51h do not
have the supply dampers 52 described in the embodiment.
The supply pipes 53a-53h each have one end thereof directly
connected to the blowout unit 55a-55h. The other end of each supply
pipe 53a-53h is connected to one of the supply ports 81a-81h. The
supply ports 81a-81h are connectable to external equipment
installed outside the substrate treating apparatus 1. The supply
ports 81a-81h are arranged, for example, in the bottom surface of
the substrate treating apparatus 1. The supply ports 81a-81h are
connected to supply dampers 83a-83h, respectively. The supply
dampers 83a-83h adjust the rates of gas supply. The supply dampers
83a-83h are connected to the air flow controller 58. The supply
dampers 83a-83h and air flow controller 58 are external equipment
of the substrate treating apparatus 1. The supply dampers 83a-83h
and air flow controller 58 are installed outside the substrate
treating apparatus 1. The controller 75 may control the supply
dampers 83a-83h. The supply dampers 83a-83h are an example of the
external equipment (more strictly, gas supplying external
equipment) in this invention.
According to this modified embodiment, the individual gas supply
devices 51a-51h are separated from one another at least inside the
substrate treating apparatus 1. It is therefore possible to
effectively prevent interference of the rates of gas supply among
the plurality of gas supply devices 51a-51h. Even though the
individual gas supply devices 51a-51h are without the supply
dampers 52, the rate of gas supply can be adjusted for each
individual gas supply device 51 by using the external equipment
which adjusts the rates of gas supply (e.g. the supply dampers
83a-83h). Consequently, the treatment quality in each solution
treating unit SU can be improved conveniently.
(3) In the embodiment, the individual gas exhaust devices 61 have
no exhaust dampers. The invention is not limited to this. That is,
the individual gas exhaust devices 61 may have exhaust dampers.
One modified embodiment will be described with reference to FIG.
13. The individual gas exhaust device 61a has an exhaust pipe 62a,
an exhaust port 63a and an exhaust damper 91a. Similarly, the
individual gas exhaust devices 61b-61h, respectively, have exhaust
pipes 62b-62h, exhaust ports 63b-63h and exhaust dampers
91b-91h.
The exhaust pipes 62a-62h each have one end thereof connected to
the cup 42 of the solution treating unit SUa-SUh. The exhaust
dampers 91a-91h are mounted in intermediate positions of the
exhaust pipes 62a-62h. The exhaust dampers 91a-91h adjust the rates
of gas exhaust from the solution treating units SUa-SUh,
respectively. The exhaust dampers 91a-91h are arranged outside the
chambers CH, respectively. The exhaust pipes 62a-62h have the other
ends connected to the exhaust ports 63a-63h, respectively. The
exhaust ports 63a-63h are connectable to external equipment
installed outside the substrate treating apparatus 1. The exhaust
ports 63a-63h are arranged, for example, in the bottom surface of
the substrate treating apparatus 1.
The controller 75 controls the exhaust dampers 91a-91h.
The exhaust ports 63a-63h are connected to the gas suction device
67, respectively. The gas suction device 67 is external equipment
of the substrate treating apparatus 1. Note that the exhaust
dampers 66a-66h described in the embodiment are omitted.
According to the modified embodiment of FIG. 13, the individual gas
exhaust devices 61a-61h, with the exhaust dampers 91a-91h, can
conveniently adjust the rates of gas exhaust from the solution
treating units SU.
Another modified embodiment will be described with reference to
FIG. 14. As shown, the individual gas exhaust device 61a has an
exhaust pipe 62a and an exhaust damper 91a. Similarly, the
individual gas exhaust devices 61b-61h, respectively, have exhaust
pipes 62b-62h and exhaust dampers 91b-91.
The exhaust pipes 62a-62h each have one end thereof connected to
the cup 42 of the solution treating unit SUa-SUh. The exhaust
dampers 91a-91h are mounted in intermediate positions of the
exhaust pipes 62a-62h. The exhaust dampers 91a-91h are arranged
inside the chambers CH, respectively.
The substrate treating apparatus 1 has collecting pipes 93a and
93b. The collecting pipes 93a and 93b are provided as individually
corresponding to the solution treating unit groups. Specifically,
the collecting pipe 93a is related to one solution treating unit
group consisting of the solution treating units SUa, SUc, SUe and
SUg. The collecting pipe 93b is related to one solution treating
unit group consisting of the solution treating units SUb, SUd, SUf
and SUh.
As a result, the collecting pipe 93a is related to the solution
treating units SUa, SUc, SUe and SUg. The collecting pipe 93a is
related to the cups 42 of the solution treating unit SUa, SUc, SUe
and SUg. Further, the collecting pipe 93a is related to the
individual gas exhaust devices 61a, 61c, 61e and 61g which
discharge gas from the solution treating units SUa, SUc, SUe and
SUg. The same is the case with the other collecting pipe 93b.
The collecting pipes 93a and 93b collect gas only from the
plurality of individual gas exhaust devices 61 corresponding to the
solution treating unit groups, respectively. For example, the
collecting pipe 93a collects gas only from the individual gas
exhaust devices 61a, 61c, 61e and 61g. However, the collecting pipe
93a does not collect the gas from the individual gas exhaust
devices 61 other than the individual gas exhaust devices 61a, 61c,
61e and 61g. Similarly, the collecting pipe 93b collects gas only
from the individual gas exhaust devices 61b, 61d, 61f and 61h.
Specifically, the collecting pipe 93a is connected to the exhaust
pipes 62a, 62c, 62e and 62g. However, the collecting pipe 93a is
not connected to the exhaust pipes 62 other than the exhaust pipes
62a, 62c, 62e and 62g. Similarly, the collecting pipe 93b is
connected to the individual gas exhaust devices 61b, 61d, 61f and
61h.
The collecting pipes 93a and 93b, when not particularly
distinguished, will be written simply "collecting pipe(s) 93".
The collecting pipes 93 are installed to extend in the up-down
direction Z in positions laterally of the solution treating unit
groups corresponding to the collecting pipes 93. For example, the
collecting pipe 93a is installed to extend in the up-down direction
Z in a position laterally (e.g. forward XF) of the solution
treating units SUa, SUc, SUe and SUg. The collecting pipe 93b is
installed to extend in the up-down direction Z in a position
laterally (e.g. backward XB) of the solution treating units SUb,
SUd, SUf and SUh.
The collecting pipes 93 have a range in the up-down direction Z
that preferably includes height positions of all the solution
treating units SU belonging to the corresponding solution treating
unit groups. It is preferred, for example, that the range in the
up-down direction Z of the collecting pipe 93a covers height
positions of the solution treating units SUa, SUc, SUe and SUg.
The collecting pipes 93 are installed to extend in the up-down
direction Z, laterally of the cup groups corresponding to the
collecting pipes 93. For example, the collecting pipe 93a is
installed to extend in the up-down direction Z, in a position
laterally (e.g. forward XF) of the cups 42 of the solution treating
units SUa, SUc, SUe and SUg. The collecting pipe 93b is installed
to extend in the up-down direction Z, in a position laterally (e.g.
backward XB) of the cups 42 of the solution treating units SUb,
SUd, SUf and SUh.
The collecting pipe 93 has a range in the up-down direction Z that
preferably includes height positions of all the cups 42 belonging
to the corresponding cup group. It is preferred, for example, that
the range in the up-down direction Z of the collecting pipe 93a
covers height positions of the cups 42 of the solution treating
units SUa, SUc, SUe and SUg.
The substrate treating apparatus 1 further includes exhaust ports
95a and 95b for the collecting pipes. The exhaust ports 95a and 95b
are provided individually for the collecting pipes 93a and 93b. The
exhaust port 95a is connected to the collecting pipe 93a. The
exhaust port 95b is connected to the collecting pipe 93b. The
exhaust ports 95a and 95b are connectable to external equipment
installed outside the substrate treating apparatus 1. The exhaust
ports 95a and 95b are arranged in a bottom surface of the treating
section 17, for example. The exhaust ports 95a and 95b are
connected to the gas suction device 67 which is external
equipment.
According to the modified embodiment of FIG. 14 also, the
individual gas exhaust devices 61a-61h, with the exhaust dampers
91a-91h, can conveniently adjust the rates of gas exhaust from the
solution treating units SU.
Further, the substrate treating apparatus 1 with the collecting
pipe 93a can easily uniform the shape, size, direction and so on of
the individual gas exhaust devices 61, among the individual gas
exhaust devices 61a, 61c, 61e and 61g. Specifically, the shape,
size, direction and so on of the exhaust pipes 62 may easily be
unified among the gas exhaust pipes 62a, 62c, 62e and 62g. Further,
the arrangement of the exhaust pipes 62 and supply dampers 91 can
easily be unified among the individual gas exhaust devices 61a,
61c, 61e and 61g.
As a result, the rates of gas exhaust can be prevented conveniently
from interfering with one another among the individual gas exhaust
devices 61a, 61c, 61e and 61g. For example, the rate of gas exhaust
from the individual gas exhaust device 61a may be prevented
conveniently from causing variations in the rates of gas exhaust
from the other individual gas exhaust devices 61c, 61e and 61g.
When the rate of gas exhaust from the individual gas exhaust device
61a is changed intentionally, for example, this change can be
prevented conveniently from inadvertently varying the rates of gas
exhaust from the other individual gas exhaust devices 61c, 61e and
61g. This can conveniently improve the treatment quality in the
solution treating units SUa, SUc, SUe and SUg relating to the
collecting pipe 93a.
Similarly, the substrate treating apparatus 1 with the collecting
pipe 93b can easily uniform the shape, size, direction and so on of
the individual gas exhaust devices 61. As a result, the rates of
gas exhaust can be prevented conveniently from interfering with one
another among the individual gas exhaust devices 61. This can
conveniently improve the treatment quality in the solution treating
units SU.
The collecting pipe 93a is installed to extend in the up-down
direction Z, in a position laterally of the solution treating unit
group consisting of the solution treating units SUa, SUc, SUe and
SUg. Therefore, the solution treating units SUa, SUc, SUe and SUg
are located substantially in the same direction relative to the
collecting pipe 93a. Further, the solution treating units SUa, SUc,
SUe and SUg are spaced substantially the same distance from the
collecting pipe 93a. Therefore, the shape, size, direction and so
on of the individual gas exhaust devices 61 can be uniformed with
increased ease among the individual gas exhaust devices 61a, 61c,
61e and 61g corresponding to the solution treating units SUa, SUc,
SUe and SUg.
Similarly, the collecting pipe 93b is installed to extend in the
up-down direction Z, in a position laterally of the corresponding
solution treating unit group. Therefore, the shape, size, direction
and so on of the individual gas exhaust devices 61 can be uniformed
with increased ease.
The range in the up-down direction Z of the collecting pipes 93
covers the height positions of all the solution treating units SU
belonging to the corresponding solution treating unit groups.
Therefore, the shape, size, direction and so on of the individual
gas exhaust devices 61 can be uniformed with increased ease.
The collecting pipe 93a is installed to extend in the up-down
direction Z, laterally of the cup group consisting of the cups 42
of the solution treating units SUa, SUc, SUe and SUg. Therefore,
the cups 42 of the solution treating units SUa, SUc, SUe and SUg
are located substantially in the same direction relative to the
collecting pipe 93a. Further, the cups 42 of the solution treating
units SUa, SUc, SUe and SUg are spaced substantially the same
distance from the collecting pipe 93a. Therefore, the shape, size,
direction and so on of the individual gas exhaust devices 61 can be
uniformed with increased ease among the individual gas exhaust
devices 61a, 61c, 61e and 61g corresponding to the cups 42 of the
solution treating units SUa, SUc, SUe and SUg.
Similarly, the collecting pipe 93b is installed to extend in the
up-down direction Z, in a position laterally of the corresponding
cup group. Therefore, the shape, size, direction and so on of the
individual gas exhaust devices 61 can be uniformed with increased
ease.
The range in the up-down direction Z of the collecting pipes 93
covers the height positions of all the cups 42 belonging to the
corresponding cup groups. Therefore, the shape, size, direction and
so on of the individual gas exhaust devices 61 can be uniformed
with increased ease.
The same collecting pipe 93 does not collect gas from the plurality
of individual gas exhaust devices 61 corresponding to the solution
treating units SU arranged to adjoin each other substantially in
the horizontal direction. For example, the solution treating units
SUa and SUb are arranged to adjoin each other substantially in the
horizontal direction. The solution treating unit SUa corresponds to
the individual gas exhaust device 61a. The solution treating unit
SUb corresponds to the individual gas exhaust device 61b. The
collecting pipe 93a collects gas from the individual gas exhaust
device 61a. The collecting pipe 93b collects gas from the
individual gas exhaust device 61b. Thus, the same collecting pipe
93 does not collect gas from both of the individual gas exhaust
devices 61a and 61b. The rates of gas exhaust from the treating
units SUa and SUb can therefore be prevented conveniently from
interfering with each other. This can conveniently improve the
treatment quality in the solution treating units SUa and SUb. Thus,
even where a plurality of solution treating units SU are arranged
to adjoin each other substantially in the horizontal direction, the
treatment quality in the solution treating units SU can be improved
conveniently.
Since the collecting pipe 93 collects gas from the plurality of
(e.g. four) individual gas exhaust devices 61, the individual gas
exhaust devices 61 can be reduced in size. Consequently, the
installation space for the individual gas exhaust devices 61 can be
reduced.
(4) In the embodiment, the air flow controller 58 and gas suction
device 67 are external equipment. The invention is not limited to
this. For example, the air flow controller 58 and gas suction
device 67 may be installed inside the substrate treating apparatus
1.
Reference is made to FIG. 15. FIG. 15 is a detailed side view
showing individual gas supply devices and individual gas exhaust
devices according to a modified embodiment. For expediency, FIG. 15
shows only individual gas supply devices 51 and individual gas
exhaust devices 61 relating to the solution treating units SUa-SUh.
Components identical to those of the embodiment are shown with the
same signs, and will not particularly be described.
As shown, the air flow controller 58 and gas suction device 67 may
be installed inside the substrate treating apparatus 1 (e.g. in a
lower part of the treating block BA). This arrangement can omit the
exhaust ports 63. That is, the construction of the individual gas
exhaust devices 61 can be simplified. The supply ports 57 for the
distributing pipes can also be omitted.
(5) In the embodiment, the rates of gas supply and exhaust relating
to the solution treating units SUa are the same as shown in FIG.
12. The invention is not limited to this. The rates of supply and
exhaust to/from the solution treating unit SUa may be different
from each other. The same may be said of the rates of supply and
exhaust to/from the other solution treating units SU.
(6) In the embodiment, the controller 75 changes the rate of gas
supply to the solution treating unit SU upon lapse of the
predetermined time .DELTA.ts after the solution treating unit SU
starts solution treatment. The invention is not limited to this.
For example, the controller 75 may change the rate of gas supply to
the solution treating unit SU based on treatment conditions for the
solution treatment. Here, the treatment conditions for the solution
treatment include discharge timing of a treating solution,
discharge rate of the treating solution, rotation speed of the
wafer W and so on.
Similarly, in the embodiment, the controller 75 changes the rate of
gas exhaust from the solution treating unit SU upon lapse of the
predetermined time .DELTA.ts after the solution treating unit SU
starts solution treatment. The invention is not limited to this.
For example, the controller 75 may change the rate of gas exhaust
from the solution treating unit SU based on the treatment
conditions for the solution treatment.
(7) In the embodiment, the rates of gas supply and gas exhaust are
changed while the solution treating units SU are engaged in
solution treatment. The invention is not limited to this. That is,
at least either one of the rates of gas supply and gas exhaust may
be maintained constant while the solution treating units SU are
engaged in solution treatment.
(8) In the embodiment, the controller 75 controls both the rate of
gas supply to the solution treating units SU and the rate of gas
exhaust from the solution treating units SU. The invention is not
limited to this. For example, the controller 75 may control only
one of the rate of gas supply to the solution treating units SU and
the rate of gas exhaust from the solution treating units SU.
(9) In the embodiment, the individual gas supply devices 51 may
vary the rate of gas supply to the solution treating units SU, for
example, by adjusting gas flow rate [m.sup.3/s]. Or the individual
gas supply devices 51 may vary the rate of gas supply to the
solution treating units SU by adjusting gas flow velocity [m/s]. In
other words, the supply dampers 52 may adjust gas flow rate
[m.sup.3/s], or may adjust gas flow velocity [m/s].
Similarly, the individual exhaust devices 61 may vary the rate of
gas exhaust from the solution treating units SU, for example, by
adjusting gas flow rate [m.sup.3/s]. Or the individual gas exhaust
devices 61 may vary the rate of gas exhaust from the solution
treating units SU by adjusting gas flow velocity [m/s]. In other
words, the exhaust dampers 91 may adjust gas flow rate [m.sup.3/s],
or may adjust gas flow velocity [m/s].
(10) In the embodiment, the plurality of solution treating units SU
installed in the same chamber CH carry out the same type of
solution treatment of the wafers W. The invention is not limited to
this. That is, the plurality of solution treating units SU
installed in the same chamber CH may carry out different solution
treatments of the wafers W. For example, an antireflection film
coating unit BARC and a resist film coating unit RESIST may be
installed in the same chamber CH.
(11) The embodiment has exemplified antireflection film forming
treatment, resist film forming treatment and developing treatment
as solution treatment. The invention is not limited to this. The
solution treatment may be protective film forming treatment, for
example. The protective film forming treatment is a treatment for
forming protective film on the surfaces of the wafers W by applying
a protective film material to the wafers W. Or the solution
treatment may be cleaning treatment. The cleaning treatment is a
treatment for cleaning the wafers W by supply a cleaning liquid or
rinsing liquid to the wafers W.
(12) In the embodiment, each chamber CH houses two solution
treating units SU. The invention is not limited to this. One
chamber CH may house only one solution treating unit SU. Or one
chamber CH may house three or more solution treating units SU.
(13) In the embodiment, the distributing pipes 56 are installed
based on the solution treating unit groups. The invention is not
limited to this. For example, the distributing pipes 56 may be
installed based on the blowout unit groups. More particularly, the
distributing pipes 56a, 56b, 56c and 56d may be provided
individually to correspond to the blowout unit groups.
(14) In the embodiment, the collecting pipes 93 are installed based
on the solution treating unit groups. The invention is not limited
to this. For example, the collecting pipes 93 may be installed
based on the cup groups. More particularly, the collecting pipes
93a and 93b may be provided individually to correspond to the cup
groups.
(15) In the embodiment, the substrate treating apparatus 1 has one
individual gas supply device 51 for one solution treating unit SU.
The invention is not limited to this. That is, the substrate
treating apparatus 1 may have a plurality of individual gas supply
devices 51 for one solution treating unit SU.
(16) In the embodiment, the substrate treating apparatus 1 has one
blowout unit 55 for one solution treating unit SU. The invention is
not limited to this. That is, the substrate treating apparatus 1
may have a plurality of blowout units 55 for one solution treating
unit SU.
(17) In the embodiment, the substrate treating apparatus 1 had one
individual exhaust device 61 for one solution treating unit SU. The
invention is not limited to this. That is, the substrate treating
apparatus 1 may have a plurality of individual exhaust devices 61
for one solution treating unit SU.
(18) In the embodiment, each of the solution treating units SUa-SUh
has one cup 42. The invention is not limited to this. Each solution
treating unit SUa-SUh may have a plurality of cups 42. Similarly,
in the embodiment, each of the solution treating units SUi-SUp has
one cup 47. The invention is not limited to this. Each solution
treating unit SUi-SUp may have a plurality of cups 47.
(19) Further variations may be made by appropriately combining the
constructions of the foregoing embodiment and each modified
embodiment described above.
This invention may be embodied in other specific forms without
departing from the spirit or essential attributes thereof and,
accordingly, reference should be made to the appended claims,
rather than to the foregoing specification, as indicating the scope
of the invention.
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