U.S. patent number 11,174,553 [Application Number 16/444,543] was granted by the patent office on 2021-11-16 for gas distribution assembly for improved pump-purge and precursor delivery.
This patent grant is currently assigned to APPLIED MATERIALS, INC.. The grantee listed for this patent is Applied Materials, Inc.. Invention is credited to Kenneth Brian Doering, Kevin Griffin, Mario D. Silvetti.
United States Patent |
11,174,553 |
Doering , et al. |
November 16, 2021 |
Gas distribution assembly for improved pump-purge and precursor
delivery
Abstract
Gas injector inserts having a wedge-shaped housing, at least one
first slot and at least one second slot are described. The housing
has a first opening in the back face that is in fluid communication
with the first slot in the front face and a second opening in the
back face that is in fluid communication with the second slot in
the front face. Each of the first slot and the second slot has an
elongate axis that extends from the inner peripheral end to the
outer peripheral end of the housing. The gas injector insert is
configured to provide a flow of gas through the first slots at
supersonic velocity. Gas distribution assemblies and processing
chambers including the gas injector inserts are described.
Inventors: |
Doering; Kenneth Brian (San
Jose, CA), Silvetti; Mario D. (Morgan Hill, CA), Griffin;
Kevin (Livermore, CA) |
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
|
|
Assignee: |
APPLIED MATERIALS, INC. (Santa
Clara, CA)
|
Family
ID: |
1000005936830 |
Appl.
No.: |
16/444,543 |
Filed: |
June 18, 2019 |
Prior Publication Data
|
|
|
|
Document
Identifier |
Publication Date |
|
US 20190382896 A1 |
Dec 19, 2019 |
|
Related U.S. Patent Documents
|
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
Issue Date |
|
|
62686398 |
Jun 18, 2018 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23C
16/45544 (20130101); C23C 16/4584 (20130101); C23C
16/45563 (20130101) |
Current International
Class: |
C23C
16/40 (20060101); C23C 16/458 (20060101); C23C
16/455 (20060101) |
Field of
Search: |
;118/715,728
;156/345.29,345.33,345.34 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
|
|
|
|
|
|
|
100439949 |
|
Jul 2004 |
|
KR |
|
101540718 |
|
Jul 2015 |
|
KR |
|
Other References
PCT International Search Report and Written Opinion in
PCT/US2019/037652 dated Oct. 18, 2019, 11 pages. cited by
applicant.
|
Primary Examiner: Zervigon; Rudy
Attorney, Agent or Firm: Servilla Whitney LLC
Parent Case Text
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims priority to U.S. Provisional Application
No. 62/686,398, filed Jun. 18, 2018, the entire disclosure of which
is hereby incorporated by reference herein.
Claims
What is claimed is:
1. A gas injector insert comprising: a housing having a back face
and front face, an inner peripheral end and an outer peripheral end
defining a length and elongate axis, and a first side and a second
side defining a width, the width increasing from the inner
peripheral end to the outer peripheral end, the housing comprising
a top plate, an intermediate plate and a bottom plate, the top
plate comprises at least one first opening and at least one second
opening, the at least one first opening in communication with a
plurality of passages extending through the top plate, the at least
one second opening in fluid communication with a plurality of
channels formed in a bottom face of the top plate; a first opening
in the back face of the housing, the first opening in fluid
communication with at least one first slot in the front face of the
housing, the first slot having an elongate axis extending from a
first end near the inner peripheral end to a second end near the
outer peripheral end; and a second opening in the back face of the
housing, the second opening in fluid communication with at least
one second slot in the front face of the housing, the second slot
having an elongate axis extending from a first end near the inner
peripheral end to a second end near the outer peripheral end.
2. The gas injector insert of claim 1, wherein there are more first
slots than second slots.
3. The gas injector insert of claim 2, wherein there are four first
slots and three second slots.
4. The gas injector insert of claim 3, wherein the first slots are
linear slots having a substantially uniform width from the first
end to the second end.
5. The gas injector insert of claim 4, wherein the second slots are
linear slots having a substantially uniform width from the first
end to the second end.
6. The gas injector insert of claim 2, wherein the gas injector
insert is configured to provide a flow of gas through the housing
from the first opening and exiting the first slots at supersonic
velocity.
7. The gas injector insert of claim 6, wherein the first slots are
in fluid communication with a purge gas and the second slots are in
fluid communication with a vacuum source.
8. The gas injector insert of claim 1, wherein the intermediate
plate comprises a plurality of first passages and a plurality of
second passages, the plurality of first passages extending through
the intermediate plate and aligned with the plurality of passages
in the top plate, the plurality of second passages extending
through intermediate plate and aligned with the plurality of
channels in the top plate, a bottom face of the intermediate plate
comprises a plurality of ridges extending from an inner end to an
outer end, each of the plurality of first passages extending to a
bottom face of one of the ridges.
9. The gas injector insert of claim 8, wherein the plurality of
ridges have sloped sides so a width of the ridge increases with
distance from the bottom face of the intermediate plate.
10. The gas injector insert of claim 8, wherein the bottom plate
has a first plurality of channels and a second plurality of
openings in a top face of the bottom plate, the first plurality of
channels aligned with the plurality of ridges in the intermediate
plate so that when assembled, each of the ridges is within a
channel, the plurality of channels in fluid communication with the
first slots in the front face of the housing, the second plurality
of openings aligned with the plurality of second passages in the
intermediate plate and extending through a thickness of the bottom
plate to second slots in the front face of the housing.
11. The gas injector insert of claim 10, wherein each of the
plurality of channels in the bottom plate have a post adjacent a
first end and a second end of the channels.
12. The gas injector insert of claim 1, wherein the top plate,
intermediate plate and bottom plate are connected by a fastener so
that a bottom face of the top plate contacts a top face of the
intermediate plate and a bottom face of the intermediate plate
contacts a top face of the bottom plate.
13. The gas injector insert of claim 1, wherein the housing has a
single piece body with an upper passage extending along the
elongate axis of the housing and a lower passage extending along
the elongate axis of the housing, the upper passage in fluid
communication with one of the first opening or the second opening
and the lower passage in fluid communication with the other of the
first passage or second passage, the first passage having a
plurality of apertures extending from the first passage to the
front face of the housing and the second passage having a plurality
of apertures extending from the second passage to the front face of
the housing.
14. The gas injector insert of claim 13, where there are more than
one upper passage connected by at least one upper cross passage and
there is more than one lower passage connected by at least one
lower cross passage.
15. A gas distribution assembly comprising the gas injector insert
of claim 1, wherein the gas injector insert comprises a flange
configured to be connected to a back surface of the gas
distribution assembly.
16. The gas distribution assembly of claim 15, wherein the housing
of the gas injector insert is configured so that the front face of
the gas injector insert is substantially coplanar with the front
face of the housing.
17. A gas injector insert comprising: a wedge-shaped housing having
a back face and front face, an inner peripheral end and an outer
peripheral end defining a length and elongate axis, and a first
side and a second side defining a width, the width increasing from
the inner peripheral end to the outer peripheral end; a first
opening in the back face of the housing, the first opening in fluid
communication with four first slots in the front face of the
housing, the first slots having an elongate axis extending from a
first end near the inner peripheral end to a second end near the
outer peripheral end; and a second opening in the back face of the
housing, the second opening in fluid communication with three
second slots in the front face of the housing, the second slots
having an elongate axis extending from a first end near the inner
peripheral end to a second end near the outer peripheral end,
wherein each of the first slots is spaced from adjacent first slots
by a second slot and a gas flowing through the first slot exits the
housing at supersonic velocity.
Description
TECHNICAL FIELD
Embodiments of the disclosure generally relate to an apparatus for
semiconductor wafer processing. More particularly, embodiments of
the disclosure relate to gas injector inserts and gas distribution
assemblies with a gas injector insert that provides improved
pump-purge operation and precursor delivery.
BACKGROUND
Atomic Layer Deposition (ALD) and Plasma-Enhanced ALD (PEALD) are
deposition techniques that offer control of film thickness and
conformality in high-aspect ratio structures. Due to continuously
decreasing device dimensions in the semiconductor industry, there
is increasing interest and applications that use ALD/PEALD. In some
cases, only PEALD can meet specifications for desired film
thickness and conformality.
Semiconductor device formation is commonly conducted in substrate
processing platforms containing multiple chambers. In some
instances, the purpose of a multi-chamber processing platform or
cluster tool is to perform two or more processes on a substrate
sequentially in a controlled environment. In other instances,
however, a multiple chamber processing platform may only perform a
single processing step on substrates; the additional chambers are
intended to maximize the rate at which substrates are processed by
the platform. In the latter case, the process performed on
substrates is typically a batch process, wherein a relatively large
number of substrates, e.g. 25 or 50, are processed in a given
chamber simultaneously. Batch processing is especially beneficial
for processes that are too time-consuming to be performed on
individual substrates in an economically viable manner, such as for
atomic layer deposition (ALD) processes and some chemical vapor
deposition (CVD) processes.
In large spatial ALD processing chambers, reactive gases can be
dragged between process regions resulting in gas phase mixing of
the reactive gases. Additionally, reaction byproducts can be
dragged through the gas curtains separating process regions.
Therefore, there is a need in the art for apparatus to improve
separation of process gases in a spatial ALD processing
chamber.
SUMMARY
One or more embodiments of the disclosure are directed to gas
injector inserts comprising a wedge-shaped housing having a back
face and front face, an inner peripheral end and an outer
peripheral end defining a length and elongate axis, and a first
side and a second side defining a width, the width increasing from
the inner peripheral end to the outer peripheral end. A first
opening is in the back face of the housing. The first opening is in
fluid communication with at least one first slot in the front face
of the housing. The first slot has an elongate axis extending from
a first end near the inner peripheral end to a second end near the
outer peripheral end. A second opening is in the back face of the
housing. The second opening is in fluid communication with at least
one second slot in the front face of the housing. The second slot
has an elongate axis extending from a first end near the inner
peripheral end to a second end near the outer peripheral end.
Additional embodiments of the disclosure are directed to gas
injector inserts comprising a wedge-shaped housing having a back
face and front face, an inner peripheral end and an outer
peripheral end defining a length and elongate axis, and a first
side and a second side defining a width. The width increases from
the inner peripheral end to the outer peripheral end. A first
opening is in the back face of the housing. The first opening is in
fluid communication with four first slots in the front face of the
housing. The first slots have elongate axes extending from a first
end near the inner peripheral end to a second end near the outer
peripheral end. A second opening is in the back face of the
housing. The second opening is in fluid communication with three
second slots in the front face of the housing. The second slots
have elongate axes extending from a first end near the inner
peripheral end to a second end near the outer peripheral end. Each
of the first slots is spaced from adjacent first slots by a second
slot and a gas flowing through the first slot exits the housing at
supersonic velocity.
BRIEF DESCRIPTION OF THE DRAWING
So that the manner in which the above recited features of the
present disclosure can be understood in detail, a more particular
description of the disclosure, briefly summarized above, may be had
by reference to embodiments, some of which are illustrated in the
appended drawings. It is to be noted, however, that the appended
drawings illustrate only typical embodiments of this disclosure and
are therefore not to be considered limiting of its scope, for the
disclosure may admit to other equally effective embodiments.
FIG. 1 shows a cross-sectional view of a batch processing chamber
in accordance with one or more embodiment of the disclosure;
FIG. 2 shows a partial perspective view of a batch processing
chamber in accordance with one or more embodiment of the
disclosure;
FIG. 3 shows a schematic view of a batch processing chamber in
accordance with one or more embodiment of the disclosure;
FIG. 4 shows a schematic view of a portion of a wedge shaped gas
distribution assembly for use in a batch processing chamber in
accordance with one or more embodiment of the disclosure;
FIG. 5 shows a schematic view of a batch processing chamber in
accordance with one or more embodiment of the disclosure;
FIG. 6 shows a gas distribution assembly with openings for gas
injector inserts in accordance with one or more embodiment of the
disclosure;
FIG. 7 shows a top perspective view of a gas injector insert in
accordance with one or more embodiment of the disclosure;
FIG. 8 shows a bottom perspective view of a gas injector insert in
accordance with one or more embodiment of the disclosure;
FIG. 9 shows a bottom view of a gas injector insert in accordance
with one or more embodiment of the disclosure;
FIG. 10 shows a cross-sectional view of the gas injector insert of
FIG. 7 taken along line 10-10;
FIG. 11 shows a cross-sectional view of the gas injector insert of
FIG. 7 taken along line 11-11;
FIG. 12 shows a cross-sectional view of the gas injector insert of
FIG. 7 taken along line 12-12;
FIG. 13 shows a cross-sectional view of the gas injector insert of
FIG. 7 taken along line 13-13;
FIG. 14 shows a bottom perspective view of a top plate of a gas
injector insert in accordance with one or more embodiment of the
disclosure;
FIG. 15A shows a top perspective view of an intermediate plate of a
gas injector insert in accordance with one or more embodiment of
the disclosure;
FIG. 15B shows a bottom perspective view of an intermediate plate
of a gas injector insert in accordance with one or more embodiment
of the disclosure;
FIG. 15C shows an expanded portion of region 15C from FIG. 15B;
FIG. 16A shows top perspective view of a lower plate of a gas
injector insert in accordance with one or more embodiment of the
disclosure;
FIG. 16B shows an expanded portion of region 16B from FIG. 16A;
FIGS. 17A and 17B show top and bottom perspective view,
respectively, of a lower plate of a gas injector insert in
accordance with one or more embodiment of the disclosure; and
FIGS. 18A and 18B show cross-sectional view of a gas injector
insert in accordance with one or more embodiment of the
disclosure.
DETAILED DESCRIPTION
Before describing several exemplary embodiments of the disclosure,
it is to be understood that the disclosure is not limited to the
details of construction or process steps set forth in the following
description. The disclosure is capable of other embodiments and of
being practiced or being carried out in various ways.
A "substrate", "substrate surface", or the like, as used herein,
refers to any substrate or material surface formed on a substrate
upon which processing is performed. For example, a substrate
surface on which processing can be performed include, but are not
limited to, materials such as silicon, silicon oxide, strained
silicon, silicon on insulator (SOI), carbon doped silicon oxides,
silicon nitride, doped silicon, germanium, gallium arsenide, glass,
sapphire, and any other materials such as metals, metal nitrides,
metal alloys, and other conductive materials, depending on the
application. Substrates include, without limitation, semiconductor
wafers. Substrates may be exposed to a pretreatment process to
polish, etch, reduce, oxidize, hydroxylate (or otherwise generate
or graft target chemical moieties to impart chemical
functionality), anneal and/or bake the substrate surface. In
addition to processing directly on the surface of the substrate
itself, in the present disclosure, any of the film processing steps
disclosed may also be performed on an underlayer formed on the
substrate as disclosed in more detail below, and the term
"substrate surface" is intended to include such underlayer as the
context indicates. Thus for example, where a film/layer or partial
film/layer has been deposited onto a substrate surface, the exposed
surface of the newly deposited film/layer becomes the substrate
surface. What a given substrate surface comprises will depend on
what materials are to be deposited, as well as the particular
chemistry used.
As used in this specification and the appended claims, the terms
"reactive compound," "reactive gas," "reactive species,"
"precursor," "process gas," and the like are used interchangeably
to mean a substance with a species capable of reacting with the
substrate surface or material on the substrate surface in a surface
reaction (e.g., chemisorption, oxidation, reduction). For example,
a first "reactive gas" may simply adsorb onto the surface of a
substrate and be available for further chemical reaction with a
second reactive gas.
"Atomic layer deposition" or "cyclical deposition" as used herein
refers to the sequential exposure of two or more reactive compounds
to deposit a layer of material on a substrate surface. The
substrate, or portion of the substrate, is exposed separately to
the two or more reactive compounds which are introduced into a
reaction zone of a processing chamber. In a time-domain ALD
process, exposure to each reactive compound is separated by a time
delay to allow each compound to adhere and/or react on the
substrate surface and then be purged from the processing chamber.
These reactive compounds are said to be exposed to the substrate
sequentially. In a spatial ALD process, different portions of the
substrate surface, or material on the substrate surface, are
exposed simultaneously to the two or more reactive compounds so
that any given point on the substrate is substantially not exposed
to more than one reactive compound simultaneously. As used in this
specification and the appended claims, the term "substantially"
used in this respect means, as will be understood by those skilled
in the art, that there is the possibility that a small portion of
the substrate may be exposed to multiple reactive gases
simultaneously due to diffusion, and that the simultaneous exposure
is unintended.
As used in this specification and the appended claims, the terms
"pie-shaped" and "wedge-shaped" are used interchangeably to
describe a body that is a sector of a circle. For example, a
wedge-shaped segment may be a fraction of a circle or disc-shaped
structure and multiple wedge-shaped segments can be connected to
form a circular body. The sector can be defined as a part of a
circle enclosed by two radii of a circle and the intersecting arc.
The inner edge of the pie-shaped segment can come to a point or can
be truncated to a flat edge or rounded. In some embodiments, the
sector can be defined as a portion of a ring or annulus.
The path of the substrates can be perpendicular to the gas ports.
In some embodiments, each of the gas injector assemblies comprises
a plurality of elongate gas ports which extend in a direction
substantially perpendicular to the path traversed by a substrate,
where a front face of the gas distribution assembly is
substantially parallel to the platen. As used in this specification
and the appended claims, the term "substantially perpendicular"
means that the general direction of movement of the substrates is
along a plane approximately perpendicular (e.g., about 45.degree.
to 90.degree.) to the axis of the gas ports. For a wedge-shaped gas
port, the axis of the gas port can be considered to be a line
defined as the mid-point of the width of the port extending along
the length of the port.
FIG. 1 shows a cross-section of a processing chamber 100 including
a gas distribution assembly 120, also referred to as injectors or
an injector assembly, and a susceptor assembly 140. The gas
distribution assembly 120 is any type of gas delivery device used
in a processing chamber. The gas distribution assembly 120 includes
a front surface 121 which faces the susceptor assembly 140. The
front surface 121 can have any number or variety of openings to
deliver a flow of gases toward the susceptor assembly 140. The gas
distribution assembly 120 also includes an outer peripheral edge
124 which in the embodiments shown, is substantially round.
The specific type of gas distribution assembly 120 used can vary
depending on the particular process being used. Embodiments of the
disclosure can be used with any type of processing system where the
gap between the susceptor and the gas distribution assembly is
controlled. While various types of gas distribution assemblies can
be employed (e.g., showerheads), embodiments of the disclosure may
be particularly useful with spatial ALD gas distribution assemblies
which have a plurality of substantially parallel gas channels. As
used in this specification and the appended claims, the term
"substantially parallel" means that the elongate axis of the gas
channels extend in the same general direction. There can be slight
imperfections in the parallelism of the gas channels. The plurality
of substantially parallel gas channels can include at least one
first reactive gas A channel, at least one second reactive gas B
channel, at least one purge gas P channel and/or at least one
vacuum V channel. The gases flowing from the first reactive gas A
channel(s), the second reactive gas B channel(s) and the purge gas
P channel(s) are directed toward the top surface of the wafer. Some
of the gas flow moves horizontally across the surface of the wafer
and out of the processing region through the purge gas P
channel(s). A substrate moving from one end of the gas distribution
assembly to the other end will be exposed to each of the process
gases in turn, forming a layer on the substrate surface.
In some embodiments, the gas distribution assembly 120 is a rigid
stationary body made of a single injector unit. In one or more
embodiments, the gas distribution assembly 120 is made up of a
plurality of individual sectors (e.g., injector units 122), as
shown in FIG. 2. Either a single piece body or a multi-sector body
can be used with the various embodiments of the disclosure
described.
The susceptor assembly 140 is positioned beneath the gas
distribution assembly 120. The susceptor assembly 140 includes a
top surface 141 and at least one recess 142 in the top surface 141.
The susceptor assembly 140 also has a bottom surface 143 and an
edge 144. The recess 142 can be any suitable shape and size
depending on the shape and size of the substrates 60 being
processed. In the embodiment shown in FIG. 1, the recess 142 has a
flat bottom to support the bottom of the wafer; however, the bottom
of the recess can vary. In some embodiments, the recess has step
regions around the outer peripheral edge of the recess which are
sized to support the outer peripheral edge of the wafer. The amount
of the outer peripheral edge of the wafer that is supported by the
steps can vary depending on, for example, the thickness of the
wafer and the presence of features already present on the back side
of the wafer.
In some embodiments, as shown in FIG. 1, the recess 142 in the top
surface 141 of the susceptor assembly 140 is sized so that a
substrate 60 supported in the recess 142 has a top surface 61
substantially coplanar with the top surface 141 of the susceptor
140. As used in this specification and the appended claims, the
term "substantially coplanar" means that the top surface of the
wafer and the top surface of the susceptor assembly are coplanar
within .+-.0.2 mm. In some embodiments, the top surfaces are
coplanar within .+-.0.15 mm, .+-.0.10 mm or .+-.0.05 mm. The recess
142 of some embodiments supports a wafer so that the inner diameter
(ID) of the wafer is located within the range of about 170 mm to
about 185 mm from the center (axis of rotation) of the susceptor.
In some embodiments, the recess 142 supports a wafer so that the
outer diameter (OD) of the wafer is located in the range of about
470 mm to about 485 mm from the center (axis of rotation) of the
susceptor.
The susceptor assembly 140 of FIG. 1 includes a support post 160
which is capable of lifting, lowering and rotating the susceptor
assembly 140. The susceptor assembly may include a heater, or gas
lines, or electrical components within the center of the support
post 160. The support post 160 may be the primary means of
increasing or decreasing the gap between the susceptor assembly 140
and the gas distribution assembly 120, moving the susceptor
assembly 140 into proper position. The susceptor assembly 140 may
also include fine tuning actuators 162 which can make
micro-adjustments to susceptor assembly 140 to create a
predetermined gap 170 between the susceptor assembly 140 and the
gas distribution assembly 120. In some embodiments, the gap 170
distance is in the range of about 0.1 mm to about 5.0 mm, or in the
range of about 0.1 mm to about 3.0 mm, or in the range of about 0.1
mm to about 2.0 mm, or in the range of about 0.2 mm to about 1.8
mm, or in the range of about 0.3 mm to about 1.7 mm, or in the
range of about 0.4 mm to about 1.6 mm, or in the range of about 0.5
mm to about 1.5 mm, or in the range of about 0.6 mm to about 1.4
mm, or in the range of about 0.7 mm to about 1.3 mm, or in the
range of about 0.8 mm to about 1.2 mm, or in the range of about 0.9
mm to about 1.1 mm, or about 1 mm.
The processing chamber 100 shown in the Figures is a carousel-type
chamber in which the susceptor assembly 140 can hold a plurality of
substrates 60. As shown in FIG. 2, the gas distribution assembly
120 may include a plurality of separate injector units 122, each
injector unit 122 being capable of depositing a film on the wafer,
as the wafer is moved beneath the injector unit. Two pie-shaped
injector units 122 are shown positioned on approximately opposite
sides of and above the susceptor assembly 140. This number of
injector units 122 is shown for illustrative purposes only. It will
be understood that more or less injector units 122 can be included.
In some embodiments, there are a sufficient number of pie-shaped
injector units 122 to form a shape conforming to the shape of the
susceptor assembly 140. In some embodiments, each of the individual
pie-shaped injector units 122 may be independently moved, removed
and/or replaced without affecting any of the other injector units
122. For example, one segment may be raised to permit a robot to
access the region between the susceptor assembly 140 and gas
distribution assembly 120 to load/unload substrates 60.
Processing chambers having multiple gas injectors can be used to
process multiple wafers simultaneously so that the wafers
experience the same process flow. For example, as shown in FIG. 3,
the processing chamber 100 has four gas injector assemblies and
four substrates 60. At the outset of processing, the substrates 60
can be positioned between the injector assemblies 30. Rotating 17
the susceptor assembly 140 by 45.degree. will result in each
substrate 60 which is between gas distribution assemblies 120 to be
moved to an gas distribution assembly 120 for film deposition, as
illustrated by the dotted circle under the gas distribution
assemblies 120. An additional 45.degree. rotation would move the
substrates 60 away from the injector assemblies 30. With spatial
ALD injectors, a film is deposited on the wafer during movement of
the wafer relative to the injector assembly. In some embodiments,
the susceptor assembly 140 is rotated in increments that prevent
the substrates 60 from stopping beneath the gas distribution
assemblies 120. The number of substrates 60 and gas distribution
assemblies 120 can be the same or different. In some embodiments,
there is the same number of wafers being processed as there are gas
distribution assemblies. In one or more embodiments, the number of
wafers being processed are fraction of or an integer multiple of
the number of gas distribution assemblies. For example, if there
are four gas distribution assemblies, there are 4x wafers being
processed, where x is an integer value greater than or equal to
one.
The processing chamber 100 shown in FIG. 3 is merely representative
of one possible configuration and should not be taken as limiting
the scope of the disclosure. Here, the processing chamber 100
includes a plurality of gas distribution assemblies 120. In the
embodiment shown, there are four gas distribution assemblies (also
called injector assemblies 30) evenly spaced about the processing
chamber 100. The processing chamber 100 shown is octagonal,
however, those skilled in the art will understand that this is one
possible shape and should not be taken as limiting the scope of the
disclosure. The gas distribution assemblies 120 shown are
trapezoidal, but can be a single circular component or made up of a
plurality of pie-shaped segments, like that shown in FIG. 2.
The embodiment shown in FIG. 3 includes a load lock chamber 180, or
an auxiliary chamber like a buffer station. This chamber 180 is
connected to a side of the processing chamber 100 to allow, for
example the substrates (also referred to as substrates 60) to be
loaded/unloaded from the processing chamber 100. A wafer robot may
be positioned in the chamber 180 to move the substrate onto the
susceptor.
Rotation of the carousel (e.g., the susceptor assembly 140) can be
continuous or discontinuous. In continuous processing, the wafers
are constantly rotating so that they are exposed to each of the
injectors in turn. In discontinuous processing, the wafers can be
moved to the injector region and stopped, and then to the region 84
between the injectors and stopped. For example, the carousel can
rotate so that the wafers move from an inter-injector region across
the injector (or stop adjacent the injector) and on to the next
inter-injector region where the carousel can pause again. Pausing
between the injectors may provide time for additional processing
steps between each layer deposition (e.g., exposure to plasma).
FIG. 4 shows a sector or portion of a gas distribution assembly
220, which may be referred to as an injector unit 122. The injector
units 122 can be used individually or in combination with other
injector units. For example, as shown in FIG. 5, four of the
injector units 122 of FIG. 4 are combined to form a single gas
distribution assembly 220. (The lines separating the four injector
units are not shown for clarity.) While the injector unit 122 of
FIG. 4 has both a first reactive gas port 125 and a second reactive
gas port 135 in addition to purge gas ports 155 and vacuum ports
145, an injector unit 122 does not need all of these
components.
Referring to both FIGS. 4 and 5, a gas distribution assembly 220 in
accordance with one or more embodiment may comprise a plurality of
sectors (or injector units 122) with each sector being identical or
different. The gas distribution assembly 220 is positioned within
the processing chamber and comprises a plurality of elongate gas
ports 125, 135, 145 in a front surface 121 of the gas distribution
assembly 220. The plurality of elongate gas ports 125, 135, 145 and
vacuum ports 155 extend from an area adjacent the inner peripheral
edge 123 toward an area adjacent the outer peripheral edge 124 of
the gas distribution assembly 220. The plurality of gas ports shown
include a first reactive gas port 125, a second reactive gas port
135, a vacuum port 145 which surrounds each of the first reactive
gas ports and the second reactive gas ports and a purge gas port
155.
With reference to the embodiments shown in FIG. 4 or 5, when
stating that the ports extend from at least about an inner
peripheral region to at least about an outer peripheral region,
however, the ports can extend more than just radially from inner to
outer regions. The ports can extend tangentially as vacuum port 145
surrounds reactive gas port 125 and reactive gas port 135. In the
embodiment shown in FIGS. 4 and 5, the wedge shaped reactive gas
ports 125, 135 are surrounded on all edges, including adjacent the
inner peripheral region and outer peripheral region, by a vacuum
port 145.
Referring to FIG. 4, as a substrate moves along path 127, each
portion of the substrate surface is exposed to the various reactive
gases. To follow the path 127, the substrate will be exposed to, or
"see", a purge gas port 155, a vacuum port 145, a first reactive
gas port 125, a vacuum port 145, a purge gas port 155, a vacuum
port 145, a second reactive gas port 135 and a vacuum port 145.
Thus, at the end of the path 127 shown in FIG. 4, the substrate has
been exposed to gas streams from the first reactive gas port 125
and the second reactive gas port 135 to form a layer. The injector
unit 122 shown makes a quarter circle but could be larger or
smaller. The gas distribution assembly 220 shown in FIG. 5 can be
considered a combination of four of the injector units 122 of FIG.
4 connected in series.
The injector unit 122 of FIG. 4 shows a gas curtain 150 that
separates the reactive gases. The term "gas curtain" is used to
describe any combination of gas flows or vacuum that separate
reactive gases from mixing. The gas curtain 150 shown in FIG. 4
comprises the portion of the vacuum port 145 next to the first
reactive gas port 125, the purge gas port 155 in the middle and a
portion of the vacuum port 145 next to the second reactive gas port
135. This combination of gas flow and vacuum can be used to prevent
or minimize gas phase reactions of the first reactive gas and the
second reactive gas.
Referring to FIG. 5, the combination of gas flows and vacuum from
the gas distribution assembly 220 form a separation into a
plurality of processing regions 250. The processing regions are
roughly defined around the individual reactive gas ports 125, 135
with the gas curtain 150 between 250. The embodiment shown in FIG.
5 makes up eight separate processing regions 250 with eight
separate gas curtains 150 between. A processing chamber can have at
least two processing region. In some embodiments, there are at
least three, four, five, six, seven, eight, nine, 10, 11 or 12
processing regions.
During processing a substrate may be exposed to more than one
processing region 250 at any given time. However, the portions that
are exposed to the different processing regions will have a gas
curtain separating the two. For example, if the leading edge of a
substrate enters a processing region including the second reactive
gas port 135, a middle portion of the substrate will be under a gas
curtain 150 and the trailing edge of the substrate will be in a
processing region including the first reactive gas port 125.
A factory interface 280, which can be, for example, a load lock
chamber, is shown connected to the processing chamber 100. A
substrate 60 is shown superimposed over the gas distribution
assembly 220 to provide a frame of reference. The substrate 60 may
often sit on a susceptor assembly to be held near the front surface
121 of the gas distribution assembly 120 (also referred to as a gas
distribution plate). The substrate 60 is loaded via the factory
interface 280 into the processing chamber 100 onto a substrate
support or susceptor assembly (see FIG. 3). The substrate 60 can be
shown positioned within a processing region because the substrate
is located adjacent the first reactive gas port 125 and between two
gas curtains 150a, 150b. Rotating the substrate 60 along path 127
will move the substrate counter-clockwise around the processing
chamber 100. Thus, the substrate 60 will be exposed to the first
processing region 250a through the eighth processing region 250h,
including all processing regions between. For each cycle around the
processing chamber, using the gas distribution assembly shown, the
substrate 60 will be exposed to four ALD cycles of first reactive
gas and second reactive gas.
The conventional ALD sequence in a batch processor, like that of
FIG. 5, maintains chemical A and B flow respectively from spatially
separated injectors with pump/purge section between. The
conventional ALD sequence has a starting and ending pattern which
might result in non-uniformity of the deposited film. The inventors
have surprisingly discovered that a time based ALD process
performed in a spatial ALD batch processing chamber provides a film
with higher uniformity. The basic process of exposure to gas A, no
reactive gas, gas B, no reactive gas would be to sweep the
substrate under the injectors to saturate the surface with chemical
A and B respectively to avoid having a starting and ending pattern
form in the film. The inventors have surprisingly found that the
time based approach is especially beneficial when the target film
thickness is thin (e.g., less than 20 ALD cycles), where starting
and ending pattern have a significant impact on the within wafer
uniformity performance. The inventors have also discovered that the
reaction process to create SiCN, SiCO and SiCON films, as described
herein, could not be accomplished with a time-domain process. The
amount of time used to purge the processing chamber results in the
stripping of material from the substrate surface. The stripping
does not happen with the spatial ALD process described because the
time under the gas curtain is short.
Accordingly, embodiments of the disclosure are directed to
processing methods comprising a processing chamber 100 with a
plurality of processing regions 250a-250h with each processing
region separated from an adjacent region by a gas curtain 150. For
example, the processing chamber shown in FIG. 5. The number of gas
curtains and processing regions within the processing chamber can
be any suitable number depending on the arrangement of gas flows.
The embodiment shown in FIG. 5 has eight gas curtains 150 and eight
processing regions 250a-250h. The number of gas curtains is
generally equal to or greater than the number of processing
regions. For example, if region 250a had no reactive gas flow, but
merely served as a loading area, the processing chamber would have
seven processing regions and eight gas curtains.
A plurality of substrates 60 are positioned on a substrate support,
for example, the susceptor assembly 140 shown FIGS. 1 and 2. The
plurality of substrates 60 are rotated around the processing
regions for processing. Generally, the gas curtains 150 are engaged
(gas flowing and vacuum on) throughout processing including periods
when no reactive gas is flowing into the chamber.
A first reactive gas A is flowed into one or more of the processing
regions 250 while an inert gas is flowed into any processing region
250 which does not have a first reactive gas A flowing into it. For
example if the first reactive gas is flowing into processing
regions 250b through processing region 250h, an inert gas would be
flowing into processing region 250a. The inert gas can be flowed
through the first reactive gas port 125 or the second reactive gas
port 135.
The inert gas flow within the processing regions can be constant or
varied. In some embodiments, the reactive gas is co-flowed with an
inert gas. The inert gas will act as a carrier and diluent. Since
the amount of reactive gas, relative to the carrier gas, is small,
co-flowing may make balancing the gas pressures between the
processing regions easier by decreasing the differences in pressure
between adjacent regions.
One or more embodiments of the disclosure are directed to hardware
gas injector modules that provide multiple gas inlets and multiple
gas removal sections within a single module. The number of gas
inlets and gas removal sections can be any combination. Some
embodiments advantageously provide gas injector inserts that can be
retrofit into existing gas distribution assemblies. One or more
embodiments advantageously provide injector inserts that allow
local gas exchanges and local high and low pressure regions within
the modular injector segment.
One or more embodiments of the disclosure are directed to injector
modules or inserts that improve the removal of reaction by-product.
One or more embodiments of the disclosure provide injector modules
that minimize or eliminate parasitic CVD that contributes to
process non-uniformity and lack of conformality. Some embodiments
of the disclosure provide modules that remove byproducts, target
desorption of gas trapping, improve deposition uniformity, improve
conformality in higher aspect ratio features, reduce in-film
contaminates and/or reduce particles.
One or more embodiments of the disclosure provide pump-purge
sources (also referred to as segments and pie-shaped or
wedge-shaped inserts) that provide additional high velocity purge
gas on top of the wafer as the wafer passes the segment. The high
velocity purge gas advantageously washes unused precursor and
reaction products/by-products from the substrate surface and
process region of the processing chamber. In some embodiments, the
pump-purge segment has four high velocity delivery slots with a row
of small ports each having super-sonic delivery gas jets that act
like an air knife. Vacuum channels are positioned on the sides of
the slots to exhaust gas and unwanted constituents. In some
embodiments, the pump-purge source is modified to provide a high
velocity precursor flow.
One or more embodiments of the disclosure advantageously provide
gas delivery systems that deliver and remove chemicals to/from all
parts of deeps structures on wafers with high surface area ratios
compared to blanket wafers. Some embodiments advantageously provide
rapid replenishment of precursor concentration on top of the wafers
to as to avoid loading issues which are seen with high surface area
wafers.
The use of showerheads and injectors typically result in low
velocity of either gas on the surface and the boundary layer has to
be broken by either spinning the wafer or moving the wafer at very
high velocities within the chamber, resulting in issues with
reliability, chemical separation and mean wafer between cleans
(MWBC). Some embodiments of the disclosure provide injector
segments with about four linear slots providing high velocity gas.
The pie assembly of some embodiments comprises three plates clamped
together with suitable fasteners. A top plate interfaces with and
seals to the Injector cooling plate and interfaces with piping to
provide gas and vacuum exhaust. A middle sandwiched plate can have
porting for the supply gas and many through holes for vacuum. A
bottom plate provides about four angularly equally spaced linear
slots for gas delivery to the wafer and three mid-way linear slots
for vacuum exhaust. Some embodiments include a precursor delivery
bottom plate that does not have any vacuum slots.
Some embodiments of the disclosure provide a module that can be
used as an insert for the gas distribution assembly. For example,
the injector unit 122 illustrated in FIG. 2 can have the
combination of pump and purge channels described and can be
installed in the gas distribution assembly to target regions where
additional removal or purge or both is positioned. This allows for
disruption of the injector symmetry to control the overall
process.
FIG. 6 illustrates a gas distribution assembly 120 with four
injector units 122 and four openings 610. The openings 610 can be
occupied by an injector insert (not shown) which will form a
uniform component. The openings 610 illustrated include ledges 612
which are sized to support an injector insert.
FIGS. 7 and 8 illustrate a gas injector insert 700 in accordance
with one more embodiment of the disclosure. FIG. 7 shows a top
perspective view of the insert 700 and FIG. 8 shows a bottom
perspective view of the insert 700. FIG. 9 shows the front face 711
of the insert 700. The gas injector insert 700 includes a
wedge-shaped housing 710 with a back face 712 and a front face 711,
an inner peripheral end 715 and an outer peripheral end 716 and a
first side 713 and second side 714. The inner peripheral end 715
and outer peripheral end 716 define the length L and an elongate
axis 717 that extends along the length L in the middle of the width
of the housing 710. The first side 713 and second side 714 define
the width of the housing 710. The width increases from the width
W.sub.I at the inner peripheral end 715 to the width W.sub.O at the
outer peripheral end 716, forming the wedge-shape (also called a
pie-shape).
The housing 710 is sized to fit within the opening 610 in the gas
distribution plate 120. In some embodiments, as illustrated, the
housing 710 includes a top portion 702 and bottom portion 703
configured to form a flange 704. The flange 704 can be a separate
component from the injector insert 700 or integrally formed, as
illustrated. The injector insert 700 of some embodiments can be
lowered into opening 610 (see FIG. 6) so that the flange 704 rests
on ledge 612.
In some embodiments, the housing 710 of the gas injector insert 700
is configured so that the front face 711 of the gas injector insert
700 is substantially coplanar with the front face 121 of the gas
distribution plate 120 or injector unit 122. As used in this
manner, the term "substantially coplanar" means that the front face
711 of the gas injector insert 700 and the front face 121 of the
gas distribution plate 120 are coplanar within .+-.0.2 mm, .+-.0.15
mm, .+-.0.10 mm or .+-.0.05 mm.
Referring back to FIG. 7, the gas injector insert 700 of some
embodiments has a first opening 706 and a second opening 707 in the
back face 712. The openings 706, 707 can be connected to or
configured to be connectable to one or more of a gas source and/or
a vacuum source (e.g., vacuum pump or foreline). In some
embodiments, there are two, three, four or more first openings 706.
In some embodiments, there are two, three, four or more second
openings 707. The locations of the first openings and second
openings can be varied along the length and width of the insert
700.
FIG. 10 shows a cross-sectional view of the gas injector insert 700
of FIG. 7 taken along line 10-10. In the cross-sectional view of
FIG. 10, the second opening 707 is bisected and the first opening
706 is not visible. The second opening 707 is in fluid
communication with at least one second slot 730 in the front face
711 of the gas injector insert 700. The at least one second slot
730 has an elongate axis that extends from the inner peripheral end
715 to the outer peripheral end 716. It will be understood that any
of the slots can extend from a region near the inner peripheral end
715 to a region near the outer peripheral end 716, as shown. The
elongate axis extending from the inner peripheral end means that
the elongate axis has an inner end 731 near the inner peripheral
end 715 and an outer end 732 near the outer peripheral end 716. The
second slot 730 illustrated in FIG. 10 is formed as a linear
grouping of openings 733 in the front face 711. The term "slot"
used in this manner can be a recessed portion with openings within
(as shown in FIG. 13), or a line of openings in a flat front face
(as shown in FIG. 10).
In some embodiments, the second opening 707 is in fluid
communication with at least one plenum 735 through passage 738. The
plenum 735 is connected to and in fluid communication with the
second slot 730 through passages 736. The passages 736 have plenum
openings 737 at one end and second slot 730 at the other end. The
volume of the plenum 735 is typically larger than the total volume
of the passages 736 so that the flux through the passages 736 at
the ends of the plenum is about the same as at the center of the
plenum.
FIG. 11 shows a cross-sectional view of the gas injector insert 700
of FIG. 7 taken along line 11-11. The first opening 706 is in fluid
communication with at least one second slot 720 in the front face
711 of the gas injector insert 700. The at least one second slot
720 has an elongate axis that extends from the inner peripheral end
715 to the outer peripheral end 716 of the housing 710. Stated
differently, the elongate axis extends from an inner end 721 near
the inner peripheral end 715 and an outer end 722 near the outer
peripheral end 716.
In some embodiments, the first opening 706 is in fluid
communication with at least one first plenum 725. The first plenum
725 is connected to and in fluid communication with the first slot
720 through passages 726. The volume of the first plenum 725 is
typically larger than the total volume of the passages 726 so that
the flux through the passages 726 at the ends of the first plenum
725 is about the same as at the center of the first plenum. The
first opening 706 of the illustrated embodiment is in fluid
communication with the first plenum 725 through passage 724, cross
passage 742 and passage 744. The first plenum has passage openings
727 to form fluid communication with the passage 726. The passages
726 have slot openings 728 to form fluid communication from the
passages 726 to the slot 720.
FIG. 11 also shows a partial view of a second opening 707 in fluid
communication with a second plenum 735 and a cross passage 739. The
cross passage 739 provides fluid communication between the adjacent
openings that form the second plenum 735.
FIG. 12 shows a cross-sectional view of the gas injector insert 700
of FIG. 7 taken along line 12-12. This view is taken through the
second opening 707 and shows passage 738 and cross passage 739
connecting the opening 707 to the second plenum 735.
FIG. 13 shows a cross-sectional view of the gas injector insert 700
of FIG. 7 taken along line 13-13. This view is taken through the
first opening 706 and shows the passage 724, cross passage 742 and
passage 744 connecting the first opening 706 to the first plenum
725. In this view, the second plenum 735 and passage 736 to the
second slot 730 are visible while the second opening 707 is in a
different plane. The first slot 720 and second slot 730 illustrated
in FIG. 13 shows recessed surfaces with sidewalls extending
orthogonal to the surfaces. The slot opening 728 and slot opening
733 are located in the recessed surface of the slots and a gas
exiting the slots travels parallel to the sidewalls.
As will be understood by the skilled artisan, the use of the
ordinal descriptors for a first slot and second slot, or a first
plenum and second plenum, do not imply a particular order of
components. Rather, the ordinals illustrate the connected nature of
the components. For example, each of the first slots will be
connected to a first plenum (either the same plenum or different
plenum) and each of the second slots will be connected to a second
plenum (either the same plenum or different plenum). A substrate
passing the gas injector insert 700 could be first exposed to
either the first slot or the second slot and the last exposure
could be to either a first slot or a second slot.
The number of first slots 720 and second slots 730 can vary. In
some embodiments, there are more first slots 720 than second slots
730. In some embodiments, there are an equal number of first slots
720 and second slots 730. In some embodiments, there are four first
slots 720 and three second slots 730, as illustrated in FIGS. 8 and
9.
The shape of the slots can vary. In some embodiments, the first
slots 720 are linear slots having a substantially uniform width
from the first end 721 to the second end 722 of the first slots
720. In some embodiments, the second slots 730 are linear slots
having a substantially uniform width from the first end 731 to the
second end 732. In some embodiments, both the first slots 720 and
second slots 730 are linear slots. In some embodiments, one or more
of the first slots 720 or second slots 730 are wedge-shaped slots.
As used in this manner, the term "substantially uniform" means that
the width of the slot does not vary by more than 10%, 5%, 2% or 1%
at any point along the elongate length relative to the average
width.
The order, arrangement and widths of the slots can vary to change
the flow dynamics of the process chamber. For example, a
combination of vacuum and purge gas slots can create a gas curtain
region to remove residual reactive species from the process region.
In some embodiments, the injector insert 700 is configured for use
as a purge-pump system. In embodiments of this sort, the first
slots 720 are in fluid communication with a purge gas through the
first opening 706 and the second slots 730 are in fluid
communication with a vacuum source through the second opening 707.
In some embodiments, each first slot 720 is spaced from an adjacent
first slot 720 by a second slot 730.
In some embodiments, each of the first slots 720 extend at an angle
to the adjacent first slots 720. The angle between the first slots
720 can vary depending on, for example, the overall size (width and
length) of the injector insert 700. In some embodiments, the first
slots 720 are at an angle to the adjacent first slots 720 in the
range of about 1.degree. to about 10.degree., or in the range of
about 2.degree. to about 8.degree., or in the range of about
3.degree. to about 6.degree., or in the range of about 4.degree. to
about 5.degree.. In some embodiments, the angle between adjacent
first slots 720 is less than or equal to about 15.degree.,
14.degree., 13.degree., 12.degree., 11.degree., 10.degree.,
9.degree., 8.degree., 7.degree., 6.degree., 5.degree., 4.degree.,
3.degree. or 2.degree..
In some embodiments, the gas injector insert 700 is configured to
provide a flow of gas through the housing 710 from the first
opening 706 and exiting the first slots 720 at supersonic velocity.
In some embodiments, the gas flow exiting the first slots 720 has a
velocity greater than or equal to about Mach 1, Mach 1.5, Mach 2,
Mach 2.5, Mach 3, Mach 3.5, Mach 4, Mach 4.5 or Mach 5. In some
embodiments, the injector insert 700 is configured to provide
vacuum streams with subsonic velocities.
In some embodiments, the housing 710 comprises a plurality of
components assembled to form the injector insert 700. In some
embodiments, as noted in FIG. 13, the wedge-shaped housing 710
comprises a top plate 800, an intermediate plate 900 and a bottom
plate 1000.
FIG. 14 illustrates a top plate 800 in accordance with one or more
embodiment of the disclosure. The top plate 800 comprises at least
one second opening 707 in the top face 801 that extends through the
thickness of the top plate 800. The top face 801 of some
embodiments also serves as the back face 712 of the housing 710. In
some embodiments, the housing 710 is a separate component that
surrounds the top plate 800. The at least one second opening 707 is
in fluid communication with a plurality of channels 820 formed in
the bottom face 802 of the top plate 800. When the top plate 800 is
connected to the intermediate plate 900, the channels 820 in the
bottom face 802 of the top plate 800 form the second plenum 735 and
cross passage 739.
The top plate 800 also includes at least one first opening 706
which is not visible in the illustrated embodiment. The at least
one first opening 706 is in fluid communication with a plurality of
passages 810, which are visible, extending through the top plate
which will connect with and form fluid communication with the
intermediate plate 900.
FIG. 15A shows a top view of an intermediate plate 900. FIG. 15B
shows a bottom view of an intermediate plate 900 in accordance with
one or more embodiment of the disclosure. The intermediate plate
900 has a top face 901 and bottom face 902 defining a thickness of
the intermediate plate 900. A plurality of first passages 910
extend through the intermediate plate 900 and are aligned with the
plurality of passages 810 in the top plate 800. A plurality of
second passages 736 extend through the intermediate plate 900 and
are aligned with the plurality of channels 820 in the top plate
800.
The bottom face 902 of the illustrated embodiment has a plurality
of ridges 930 that extend a distance from the bottom face 902. The
ridges 930 extend from an inner end 903 to an outer end 904 of the
intermediate plate 900. The ridges 930 of some embodiments, as
illustrated, do not extend to the edges of the plate 900. Rather,
the inner end 903 is a region near the edge boundary of the plate
900 and the outer end 904 is a region near the edge boundary of the
plate 900. Each of the plurality of first passages 910 extend
through the intermediate plate 900 to a bottom face 932 of one of
the ridges 930.
The ridges 930 of some embodiments have sidewalls 931 that extend
along a plane orthogonal to the plane formed by the bottom face 902
to a bottom face 932 of the ridge 930. In some embodiments, as
shown in expanded view FIG. 15C, the plurality of ridges 930 have
sloped sides 931 or ends 935 so that the width W.sub.r of the ridge
930 increases with distance from the bottom face 902 of the
intermediate plate 900. In some embodiments, the sloped sides 931
or ends 925 slope so that the width W.sub.r of the ridge 930
decreases with distance from the bottom face 902 of the
intermediate plate 900.
FIG. 16A shows a bottom plate 1000 in accordance with one or more
embodiment of the disclosure. The bottom plate 1000 illustrated has
a plurality of first channels 1010 and a plurality of second
openings 736 in the top face 1001 of the bottom plate 1000. The
plurality of first channels 1010 are aligned with the plurality of
ridges 930 in the intermediate plate 900 so that when assembled,
each ridge 930 is within a channel 1010. The plurality of channels
1010 are in fluid communication with the first slots 720 in the
front face of the housing 710. The plurality of second openings
1020 are aligned with the plurality of second passages 736 in the
intermediate plate 900 and extend the second passages 736 through
the thickness of the bottom plate 1000 to the second slots 730.
In some embodiments, as shown in expanded view FIG. 16B, each of
the plurality of channels 1010 has a post 1030 at a first end 1011
and a second end 1012 of the channel 1010. The post 1030 is
adjacent to the ends of the channel with a gap 1032 between the
sides 1035 of the post 1030 and the inside face 1016 of the channel
1010. In some embodiments, the sides 1035 of the posts 1030 are
sloped so that the width (diameter) of the post 1030 increases with
distance from the top face 1031 of the channel 1010. The gap 1032
of some embodiments is sized to support an O-ring (not shown) to
help form a gastight seal when the plates are assembled. The
channel 1010 includes a recessed portion 1015 which can form the
first slots 720 or communicate with additional openings and
passages to form fluid communication with the first slots 720.
The top plate 800, intermediate plate 900 and bottom plate 1000 can
be assembled to form the injector insert 700. The components can be
connected with a fastener 1100 (see FIG. 10) so that the bottom
face 802 of the top plate 800 contacts the top face 901 of the
intermediate plate 900, and the bottom face 902 of the intermediate
plate 900 contacts the top face 1001 of the bottom plate 1000.
FIG. 17A shows a top view and FIG. 17B shows a bottom view of a
bottom plate 1700 for precursor delivery. The embodiment
illustrated shows three channels 1710 in the top face 1701 and
three slots 1720 in the bottom face 1702 of the bottom plate 1700.
The illustrated component can be used with intermediate plates and
top plates configured to provide three flow paths. The skilled
artisan will recognize that this is merely representative of one
possible configuration and should not be taken as limiting the
scope of the disclosure. In some embodiments, the precursor
delivery bottom plate 1700 has four first slots 1720 and four first
channels 1710. In some embodiments, the precursor delivery bottom
plate 1700 is configured to provide a flow of precursor or reactive
gas at supersonic velocity.
FIGS. 18A and 18B illustrate a gas injector insert 1800 with a
single piece body 1810. As used in this manner, the term "single
piece" means that the upper plenum and lower plenum are formed in a
unitary piece of material. Additional components (e.g., end plugs)
can be added. The housing 1810 has a front face 1811 and back face
1812. The housing 1800 can an upper passage 1820 and a lower
passage 1830 extending along the elongate axis of the housing 1810.
FIG. 18A shows a cross-sectional view of the insert 1800 passing
through the upper passage 1820. FIG. 18B is a cross-sectional view
of the insert 1800 passing through the lower passages 1830. The
upper passage 1820 and lower passage 1830 can act as plenums for
the individual gas flow paths.
The upper passage 1820 is in fluid communication with one of the
first opening 1806 or second opening 1807 in the back face 1811.
The lower passage 1830 is in fluid communication with the other of
the first opening 1806 or second opening 1807 in the back face
1811. In the illustrated embodiments, the first opening 1806 is in
fluid communication with the lower passage 1830 and the second
opening 1807 is in fluid communication with the upper passage
1820.
The upper passage 1820 has a plurality of apertures 1840 in fluid
communication with passages 1841 extending from the upper passage
1820 to the opening 1842 in the front face 1811 of the housing
1810. The ends of the upper passage 1820 shown in cross-section are
open. Another upper passage 1820 is illustrated within the body of
the housing 1810 with plugs 1821 in the ends. The plugs can be
inserted after forming the passages to provide a gastight seal. The
passage shown in cross-section is in fluid communication with the
passage within the body through cross passage 1809 in fluid
communication with the upper passages 1820 and second opening 1807.
In some embodiments, there are more than one upper passage 1820
connected by upper cross passages 1809.
The lower passage 1830 has a plurality of apertures 1850 in fluid
communication with passages 1851 extending from the lower passage
1830 to the opening 1852 in the front face 1811 of the housing
1810. The ends of the lower passage 1830 shows in cross-section are
closed with plugs 1831. Two additional lower passages with plugs
1830 are shown in the body the housing 1810. The plugs can be
inserted after forming the lower passages 1830 to form a gastight
seal.
Passage 1863 is shown extending from the top face 1811 of the
housing 1810 to the lower passage 1830. The passage 1863 has a plug
1861 closing off the end at the top face 1811. A cross passage 1808
extends from the first opening 1806 to the passage 1863 and makes
fluid connection to the lower passage 1830. A plurality of
apertures 1850 in the lower passage 1830 form a fluid connection to
the front face 1811 through passage 1851 and opening 1852. In the
illustrated embodiment, optional additional cross passages 1870 are
shown extending from lower passage 1830 to adjacent lower passages
so that there is more than one lower passage connected by the at
least one lower cross passage 1870.
In the foregoing specification, embodiments of the disclosure have
been described with reference to specific exemplary embodiments
thereof. It will be evident that various modifications may be made
thereto without departing from the broader spirit and scope of the
embodiments of the disclosure as set forth in the following claims.
The specification and drawings are, accordingly, to be regarded in
an illustrative sense rather than a restrictive sense.
* * * * *