U.S. patent number 11,171,170 [Application Number 15/743,911] was granted by the patent office on 2021-11-09 for image sensor package with flexible printed circuits.
This patent grant is currently assigned to SONY CORPORATION. The grantee listed for this patent is SONY CORPORATION. Invention is credited to Eiichirou Kishida, Yuta Momiuchi, Emi Nishioka, Hirokazu Seki, Yuji Takaoka, Kiyohisa Tanaka, Naoki Yamashita.
United States Patent |
11,171,170 |
Momiuchi , et al. |
November 9, 2021 |
Image sensor package with flexible printed circuits
Abstract
The present technology relates to a semiconductor device
including: a solid-state image sensor having a pixel array unit in
which a plurality of pixels each having a photoelectric conversion
element is two-dimensionally arranged in a matrix; and a flexible
printed circuit having wiring adapted to connect a pad portion
provided on an upper surface side to be located on a light
receiving surface side of the solid-state image sensor to an
external terminal provided on a lower surface side opposite to the
upper surface side, in which the flexible printed circuit is
arranged along respective surfaces of the solid-state image sensor
such that a position of an end portion located on the upper surface
side becomes a position different from a position in a space above
the light receiving surface.
Inventors: |
Momiuchi; Yuta (Kanagawa,
JP), Takaoka; Yuji (Kanagawa, JP), Tanaka;
Kiyohisa (Kanagawa, JP), Kishida; Eiichirou
(Kumamoto, JP), Nishioka; Emi (Nagasaki,
JP), Yamashita; Naoki (Kumamoto, JP), Seki;
Hirokazu (Oita, JP) |
Applicant: |
Name |
City |
State |
Country |
Type |
SONY CORPORATION |
Tokyo |
N/A |
JP |
|
|
Assignee: |
SONY CORPORATION (Tokyo,
JP)
|
Family
ID: |
1000005919327 |
Appl.
No.: |
15/743,911 |
Filed: |
July 14, 2016 |
PCT
Filed: |
July 14, 2016 |
PCT No.: |
PCT/JP2016/070874 |
371(c)(1),(2),(4) Date: |
January 11, 2018 |
PCT
Pub. No.: |
WO2017/018231 |
PCT
Pub. Date: |
February 02, 2017 |
Prior Publication Data
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|
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Document
Identifier |
Publication Date |
|
US 20180204870 A1 |
Jul 19, 2018 |
|
Foreign Application Priority Data
|
|
|
|
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Jul 28, 2015 [JP] |
|
|
JP2015-148682 |
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
24/73 (20130101); H01L 24/92 (20130101); H01L
24/16 (20130101); H01L 24/32 (20130101); H01L
27/14 (20130101); H01L 27/14618 (20130101); H04N
5/2253 (20130101); H01L 27/14636 (20130101); H01L
24/14 (20130101); H04N 5/335 (20130101); H01L
2924/152 (20130101); H01L 2224/92225 (20130101); H01L
2224/14155 (20130101); H01L 23/3128 (20130101); H01L
23/4985 (20130101); H01L 23/49816 (20130101); H01L
23/49833 (20130101); H01L 2224/16227 (20130101); H01L
2924/15159 (20130101); H01L 23/3114 (20130101); H01L
2224/73253 (20130101) |
Current International
Class: |
H01L
27/14 (20060101); H01L 27/146 (20060101); H04N
5/225 (20060101); H01L 23/00 (20060101); H04N
5/335 (20110101); H01L 23/31 (20060101); H01L
23/498 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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1650426 |
|
Aug 2005 |
|
CN |
|
102365744 |
|
Feb 2012 |
|
CN |
|
2006-324304 |
|
Nov 2006 |
|
JP |
|
2012-517716 |
|
Aug 2012 |
|
JP |
|
10-2011-0115165 |
|
Oct 2011 |
|
KR |
|
200411892 |
|
Jul 2004 |
|
TW |
|
264775 |
|
May 2005 |
|
TW |
|
201044567 |
|
Dec 2010 |
|
TW |
|
2004/055891 |
|
Jul 2004 |
|
WO |
|
2010/093699 |
|
Aug 2010 |
|
WO |
|
Other References
Sze et al., Physics of Semiconductor Devices, John Wiley &
Sons, Inc. pp. 697-712 (Year: 2007). cited by examiner .
International Search Report and Written Opinion of PCT Application
No. PCT/JP2016/070874, dated Sep. 27, 2016, 10 pages of ISRWO.
cited by applicant.
|
Primary Examiner: Chou; Shih Tsun A
Attorney, Agent or Firm: Chip Law Group
Claims
The invention claimed is:
1. A semiconductor device, comprising: a solid-state image sensor,
wherein the solid-state image sensor includes a pixel array unit
and a pad portion, wherein the pixel array unit includes a
plurality of pixels in a two-dimensional matrix, and each of the
plurality of pixels includes a photoelectric conversion element; a
first flexible printed circuit; an external terminal; a bump on the
pad portion and on an upper surface of a plurality of surfaces of
the solid-state image sensor; a first terminal on an upper surface
of the first flexible printed circuit, wherein the first terminal
is different from the external terminal, the first terminal is
electrically connected to the bump, each of the pad portion and the
first flexible printed circuit is in contact with the bump, the
first flexible printed circuit includes a wiring, the wiring is
configured to connect the bump of the semiconductor device to the
external terminal of the semiconductor device, the first flexible
printed circuit is bent along the upper surface of the plurality of
surfaces of the solid-state image sensor, an entire first side
surface of the plurality of surfaces of the solid-state image
sensor, and a first portion of a lower surface of the plurality of
surfaces of the solid-state image sensor, the first flexible
printed circuit is in contact with the entire first side surface of
the solid-state image sensor, an end portion of the first flexible
printed circuit is on the upper surface of the plurality of
surfaces of the solid-state image sensor, a position of the end
portion of the first flexible printed circuit is different from a
position in a space above a light receiving surface of the
plurality of surfaces of the solid-state image sensor, the upper
surface of the solid-state image sensor corresponds to the light
receiving surface of the solid-state image sensor, the external
terminal is on the lower surface of the plurality of surfaces of
the solid-state image sensor, and the lower surface of the
solid-state image sensor is opposite to the upper surface of the
solid-state image sensor; a second flexible printed circuit,
wherein the second flexible printed circuit is bent along the upper
surface of the solid-state image sensor, an entire second side
surface of the plurality of surfaces of the solid-state image
sensor, and a second portion of the lower surface of the
solid-state image sensor, the second flexible printed circuit is in
contact with the entire second side surface of the solid-state
image sensor, and the second side surface of the solid-state image
sensor is opposite to the first side surface of the solid-state
image sensor; a transparent member configured to transmit light
incident on the light receiving surface of the solid-state image
sensor, wherein a first surface of the first flexible printed
circuit is fixed to a surface of the transparent member, and the
surface of the transparent member is opposite to the light
receiving surface of the solid-state image sensor; and a first
adhesive configured to bond a second surface of the first flexible
printed circuit to the first portion of the lower surface of the
solid-state image sensor, wherein the upper surface of the first
flexible printed circuit corresponds to the second surface of the
first flexible printed circuit.
2. The semiconductor device according to claim 1, wherein a region
of the second surface of the first flexible printed circuit is
fixed to the solid-state image sensor, a region of a first surface
of the second flexible printed circuit is fixed to the solid-state
image sensor, and a region of a second surface of the second
flexible printed circuit is fixed to the transparent member.
3. The semiconductor device according to claim 2, wherein the first
flexible printed circuit has a first side surface bent portion to
be bent along two side surfaces out of four side surfaces of the
solid-state image sensor in order to seal the solid-state image
sensor, and the second flexible printed circuit has a second side
surface bent portion along two other side surfaces out of the four
side surfaces of the solid-state image sensor in order to seal the
solid-state image sensor.
4. The semiconductor device according to claim 1, wherein a bent
portion of each of the first flexible printed circuit and the
second flexible printed circuit comprises a slit.
5. The semiconductor device according to claim 1, wherein the first
adhesive is further configured to bond a first surface of the
second flexible printed circuit to the second portion of the lower
surface of the solid-state image sensor.
6. The semiconductor device according to claim 1, further
comprising a second adhesive configured to fix the first surface of
the first flexible printed circuit to the surface of the
transparent member.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
This application is a U.S. National Phase of International Patent
Application No. PCT/JP2016/070874 filed on Jul. 14, 2016, which
claims priority benefit of Japanese Patent Application No. JP
2015-148682 filed in the Japan Patent Office on Jul. 28, 2015. Each
of the above-referenced applications is hereby incorporated herein
by reference in its entirety.
TECHNICAL FIELD
The present technology relates to a semiconductor device, a
manufacturing method for the same, and an electronic apparatus, and
particularly relates to a semiconductor device, a manufacturing
method for the same, and an electronic apparatus, in which a chip
size package can be more easily achieved by using flexible printed
circuits.
BACKGROUND ART
There is a known technology called chip on film (COF) in which a
semiconductor chip such as an IC chip or the like is directly
mounted on flexible printed circuits (FPC) in a semiconductor
device (semiconductor package). For example, disclosed is a
technology in which a chip for an image sensor is mounted on a
flexible printed circuit in which a hole is included at a center
portion and a circuit pattern is formed (refer to Patent Document
1, for example).
CITATION LIST
Patent Document
Patent Document 1: Japanese Patent Application Laid-Open No.
2006-324304
SUMMARY OF THE INVENTION
Problems to be Solved by the Invention
In above-described Patent Document 1, it is necessary to provide an
opening in a flexible printed circuit in order to expose a light
receiving surface of a pixel region in a solid-state image sensor,
and therefore, a technology to more easily achieve a chip size
package (CSP) is required using the flexible printed circuits.
The present technology is made in view of such circumstances and
directed to more easily achieving a chip size package by using a
flexible printed circuit.
Solutions to Problems
A semiconductor device according to an aspect of the present
technology includes: a solid-state image sensor having a pixel
array unit in which a plurality of pixels each having a
photoelectric conversion element is two-dimensionally arranged in a
matrix; and a flexible printed circuit having wiring adapted to
connect a pad portion provided on an upper surface side to be
located on a light receiving surface side of the solid-state image
sensor to an external terminal provided on a lower surface side
opposite to the upper surface side. In the semiconductor device,
the flexible printed circuit is arranged along respective surfaces
of the solid-state image sensor such that a position of an end
portion located on the upper surface side becomes a position
different from a position in a space above the light receiving
surface.
A manufacturing method for a semiconductor device according to an
aspect of the present technology includes: fixing a flexible
printed circuit to a transparent member adapted to transmit light
incident on a light receiving surface, the flexible printed circuit
having wiring adapted to connect a pad portion provided on an upper
surface side to be located on a light receiving surface side of a
solid-state image sensor to an external terminal provided on a
lower surface side opposite to the upper surface side; electrically
connecting the pad portion provided in the solid-state image sensor
to the wiring of the flexible printed circuit; bending the flexible
printed circuit along respective surfaces of the solid-state image
sensor such that a position of an end portion located on the upper
surface side becomes a position different from a position in a
space above the light receiving surface, and further fixing a
surface located on the lower surface side of the solid-state image
sensor to the lower surface of the solid-state image sensor; and
mounting the external terminal on the flexible printed circuit.
An electronic apparatus according to an aspect of the present
technology includes a semiconductor device including: a solid-state
image sensor having a pixel array unit in which a plurality of
pixels each having a photoelectric conversion element is
two-dimensionally arranged in a matrix; and a flexible printed
circuit having wiring adapted to connect a pad portion provided on
an upper surface side to be located on a light receiving surface
side of the solid-state image sensor to an external terminal
provided on a lower surface side opposite to the upper surface
side, in which the flexible printed circuit is arranged along
respective surfaces of the solid-state image sensor such that a
position of an end portion located on the upper surface side
becomes a position different from a position in a space above the
light receiving surface.
In the semiconductor device, manufacturing method for the same, and
electronic apparatus according to one aspect of the present
technology, the solid-state image sensor includes the pixel array
unit in which the plurality of pixels each having a photoelectric
conversion element is two-dimensionally arranged in a matrix, and
the flexible printed circuit the having the wiring adapted to
connect the pad portion provided on the upper surface side to be
located on the light receiving surface side of the solid-state
image sensor to the external terminal provided on the lower surface
side opposite to the upper surface side, in which the flexible
printed circuit is arranged along respective surfaces of the
solid-state image sensor such that the position of the end portion
located on the upper surface side becomes the position different
from the position in the space above the light receiving
surface.
Effects of the Invention
According to one aspect of the present technology, the chip size
package can be more easily achieved by using the flexible printed
circuits.
Note that effects recited herein are not necessarily limited and
may be any one of those recited in the present disclosure.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 is a cross-sectional view illustrating a cross section of a
semiconductor device of a first embodiment.
FIG. 2 is a flowchart illustrating manufacturing processes of the
semiconductor device of the first embodiment.
FIGS. 3A, 3B, and 3C are views to describe the respective
manufacturing processes of the semiconductor device of the first
embodiment.
FIGS. 4A, 4B, and 4C are views to describe the respective
manufacturing processes of the semiconductor device of the first
embodiment.
FIGS. 5A, 5B, and 5C are views to describe a structure of a
semiconductor device according to a second embodiment.
FIGS. 6A, 6B, and 6C are views to describe respective manufacturing
processes of the semiconductor device of the second embodiment.
FIGS. 7A and 7B are views to describe a structure of a
semiconductor device according to a third embodiment.
FIGS. 8A, 8B, 8C, and 8D are views to describe respective
manufacturing processes of the semiconductor device of the third
embodiment.
MODE FOR CARRYING OUT THE INVENTION
In the following, embodiments of the present technology will be
described with reference to the drawings. Note that a description
will be provided in the following order.
1. First embodiment: semiconductor device having a basic
structure
2. Second embodiment: semiconductor device having a four side
surface flexible sealing structure
3. Third embodiment: semiconductor device having a four side
surface flexible arc structure
4. Configuration of electronic apparatus
5. Exemplary uses of semiconductor device
1. First Embodiment
(Structure of Semiconductor Device)
FIG. 1 is a cross-sectional view illustrating a cross section of a
semiconductor device 10 of a first embodiment.
In the following description, note that a surface on which light is
incident will be referred to as an upper surface (front surface)
and a surface opposite to the front surface will be referred to as
a lower surface (back surface) as for respective members in the
semiconductor device 10 for convenience of description.
Additionally, note that a surface on a left side out of four side
surfaces of the semiconductor device 10 (solid-state image sensor
101) will be referred to as a left side surface, a surface on a
right side will be referred to as a right surface, a surface on a
near side as a front side surface, and a surface on a deeper side
as a back side surface for convenience of description.
In FIG. 1, the semiconductor device 10 is a semiconductor package
in which the solid-state image sensor 101 is housed and packaged.
The semiconductor device 10 includes a solid-state image sensor
101, a transparent member 102, a flexible printed circuit 103-1, a
flexible printed circuit 103-2, an adhesive 104-1, an adhesive
104-2, an adhesive 105, a pad portion 106-1, a pad portion 106-2, a
bump 107-1, a bump 107-2, and a plurality of external terminals
(ball grid array (BGA)) 108.
The solid-state image sensor 101 is, for example, an image sensor
such as a complementary metal oxide semiconductor (CMOS) image
sensor or a charge coupled device (CCD) image sensor. The
solid-state image sensor 101 includes: a pixel array unit in which
a plurality of pixels each having a photoelectric conversion
element (for example, a photodiode) is two-dimensionally arranged
in a matrix; and peripheral circuit units adapted to drive a pixel,
perform analog/digital (A/D) conversion, and the like.
The flexible printed circuit 103-1 can be used in a deformed state
because a thin and flexible material is used as an insulating base
material. In FIG. 1, the flexible printed circuit 103-1 is bent
along respective surfaces (upper surface, right side surface, and
lower surface) of the solid-state image sensor 101.
Additionally, the flexible printed circuit 103-1 has wiring
(redistribution layer (RDL)) to connect the (conductive) bump 107-1
formed on the pad portion 106-1 provided on the upper surface
(front surface) side of the solid-state image sensor 101 to the
plurality of external terminals (BGAs) 108 provided on the lower
surface (back surface) side of the solid-state image sensor
101.
Similar to the flexible printed circuit 103-1, the flexible printed
circuit 103-2 has wiring (redistribution layer (RDL)) to connect
the (conductive) bump 107-2 formed on the pad portion 106-2 of the
solid-state image sensor 101 to the plurality of external terminals
(BGAs) 108, and is bent along respective surfaces (upper surface,
left side surface, and lower surface) of the solid-state image
sensor 101 so as to become symmetric with the flexible printed
circuit 103-1.
In the flexible printed circuit 103-1 and the flexible printed
circuit 103-2 bent in the above-described states, the transparent
member 102 is bonded (fixed) to a surface along the upper surface
(front surface) of the solid-state image sensor 101 with the
adhesive 104-1 and the adhesive 104-2. Note that a cover glass, an
IR filter, or the like can be used as the transparent member 102,
for example.
Additionally, a terminal (terminal 122-1 in FIG. 3A) provided on a
surface of the flexible printed circuit 103-1 on an opposite side
of the surface to which the transparent member 102 is bonded is
electrically connected to the bump 107-1 formed on the pad portion
106-1 of the solid-state image sensor 101. In a similar manner, a
terminal (terminal 122-2 in FIG. 3A) provided on a surface of the
flexible printed circuit 103-2 on an opposite side of the surface
to which the transparent member 102 is bonded is electrically
connected to the bump 107-2 formed on the pad portion 106-2 of the
solid-state image sensor 101.
Furthermore, the solid-state image sensor 101 is bonded (fixed) to
surfaces included in the flexible printed circuit 103-1 and the
flexible printed circuit 103-2 and extending along the lower
surface (back surface) of the solid-state image sensor 101 with the
adhesive 105. Additionally, the plurality of external terminals
(BGAs) 108 is electrically connected to terminals (terminals 123-1
and 123-2 in FIG. 3A) provided on the surfaces included in the
flexible printed circuit 103-1 and the flexible printed circuit
103-2 and located on an opposite side of the surface to which the
solid-state image sensor 101 is bonded.
In the semiconductor device 10 having the above structure, light
from a subject passes through the transparent member 102 and is
made incident on a light receiving surface of the solid-state image
sensor 101, and a signal corresponding (a light amount of) the
incident light is output from the plurality of external terminals
(BGAs) 108 via the wiring formed in the flexible printed circuits
103-1 and 103-2 respectively bent from the pad portions 106-1 and
106-2 to the side surfaces (right side surface and left side
surface) and the lower surface (the back surface) of the
solid-state image sensor 101.
Additionally, the flexible printed circuit 103-1 and the flexible
printed circuit 103-2 arranged along the surface (upper surface)
located on the light receiving surface side of the solid-state
image sensor 101 are bent such that end portions of these flexible
printed circuits do not cover above the light receiving surface (do
not block the incident light), in order words, such that the
positions of the end portions become positions different from a
position in a space above the light receiving surface. Therefore,
in the semiconductor device 10, the incident light is not blocked
by the flexible printed circuit 103-1 and the flexible printed
circuit 103-2, and there is no need to provide openings at the
flexible printed circuit 103-1 and the flexible printed circuit
103-2. In other words, in the semiconductor device 10, since it is
only to bend the flexible printed circuits 103-1 and 103-2 from the
upper surface (front surface) to the side surfaces (right side
surface and left side surface) and the lower surface (back surface)
of the solid-state image sensor 101, a chip size package (CSP) can
be more easily achieved by the flexible printed circuits 103-1 and
103-2.
For example, in a chip size package in the related art, it is
necessary to use a wafer technology such as a through silicon via
(TSV) or the like in order to provide wiring from a pad portion on
an upper surface (front surface) of a solid-state image sensor to
an external terminal (BGA) formed on a lower surface (back surface)
of the solid-state image sensor. On the other hand, in the
semiconductor device 10 of FIG. 1, the chip size package can be
achieved without using the wafer technology such as the through
silicon via (TSV) because the flexible printed circuits 103-1 and
103-2 are used. Therefore, there is no peculiar problem such as
peeling of a redistribution layer (RDL) or corrosion of a pad
portion (AI pad) caused by the through silicon via (TSV), and
therefore, yield can be more improved compared in the case of the
chip size package in the related art.
Furthermore, for example, in a chip on film (COF) in the related
art, it is necessary to provide a flexible printed circuit with an
opening in order to expose a light receiving surface of a
solid-state image sensor as disclosed in Patent Document 1
described above. In the case of providing the flexible printed
circuit with the opening, the number of pieces that can be taken
out from a worksheet may be more reduced at the time of
manufacturing the flexible printed circuit, compared to a flexible
printed circuit without having an opening. Furthermore, since a
wide opening is needed to be provided for a solid-state image
sensor having a large ratio of a light receiving surface (pixel
region) to a chip area, a size of the flexible printed circuit is
needed to be enlarged according thereto. As a result, there is a
possibility that a size of a semiconductor device (semiconductor
package) becomes larger than a size of the solid-state image sensor
(chip for the image sensor).
On the other hand, in the semiconductor device 10 of FIG. 1, there
is no need to provide openings at the flexible printed circuits
103-1 and 103-2. Additionally, in the semiconductor device 10 of
FIG. 1, even in a case of using the solid-state image sensor 101
(chip for the image sensor) having a large ratio of the light
receiving surface (pixel region) to a chip area and using more
multiple pins compared to the chip on film in the related art, a
width in each of the flexible printed circuits 103-1 and 103-2
never become larger than a width of the solid-state image sensor
101, and therefore, any kind of the solid-state image sensor 101
(chip for the image sensor) can be housed.
Furthermore, in the semiconductor device 10 of FIG. 1, it is only
to bend the flexible printed circuits 103-1 and 103-2 from the
upper surface (front surface) to the side surfaces (right side
surface and left side surface) and the lower surface (back surface)
of the solid-state image sensor 101, and furthermore, the plurality
of external terminals (BGAs) 108 is formed on the lower surface
(back surface) side of the solid-state image sensor 101, and
therefore, the size of the semiconductor device 10 (semiconductor
package) and the size of the solid-state image sensor 101) become
substantially equal. As a result, since the size of the
semiconductor device 10 can be made substantially equal to the size
of the solid-state image sensor 101, the semiconductor device 10
can be miniaturized. Additionally, since a layout of the
redistribution layer (RDL) is more simplified than that of the chip
on film in the related art, a cost to prepare the flexible printed
circuits 103-1 and 103-2 can be reduced.
Furthermore, in the chip on film in the related art, in a case of
adopting a layout to form a redistribution layer (RDL) on the
outside or the lower surface (back side) of the solid-state image
sensor from one side of the solid-state image sensor (chip for the
image sensor), it is necessary to provide high-density wiring in
the vicinity of the light receiving surface (pixel region) and also
the redistribution layer (RDL) is elongated, and therefore, signal
delay, signal attenuation, power consumption increase, and the like
may be caused. On the other hand, in the semiconductor device 10 of
FIG. 1, adopted is the structure in which the flexible printed
circuits 103-1 and 103-2 are bent from the upper surface (front
surface) to the side surfaces (right side surface and left side
surface) and the lower surface (back surface) of the solid-state
image sensor 101, and therefore, the redistribution layer (RDL) can
be minimized, and risks such as signal delay, signal attenuation,
power consumption increase, and the like can be reduced.
In the following description, note that the flexible printed
circuit 103-1 and the flexible printed circuit 103-2 will be each
referred to as a flexible printed circuit 103 unless otherwise it
is particularly necessary to distinguish one from the other.
Additionally, in a case where it is not necessary to distinguish
the pad portion 106-1 from the pad portion 106-2, these pad
portions will be each referred to as a pad portion 106, and in a
case of it is not necessary to distinguish the bump 107-1 from the
bump 107-2, these bumps will be each referred to as a bump 107.
(Flow of Manufacturing Processes of Semiconductor Device)
Next, a flow of the manufacturing processes of the semiconductor
device 10 of the first embodiment will be described with reference
to a flowchart of FIG. 2.
Note that the manufacturing processes illustrated in FIG. 2
correspond to a back-end process, and the solid-state image sensor
101 is completed in a front-end process (wafer process).
Additionally, FIGS. 3A, 3B, 3C, 4A, 4B, and 4C schematically
illustrate the manufacturing processes in FIG. 2, and detailed
content of the respective processes in FIG. 2 will be described
with reference to FIGS. 3A, 3B, 3C, 4A, 4B, and 4C as
appropriate.
(Redistribution Layer (RDL) Forming Process)
In step S11, a redistribution layer (RDL) forming process is
performed.
In the redistribution layer (RDL) forming process, as illustrated
in A of FIG. 3A, an RDL 121-1 is formed on the flexible printed
circuit 103-1, and terminals 122-1 corresponding to the number of
pad portions 106-1 of the solid-state image sensor 101 and
terminals 123-1 corresponding to the number of the external
terminals (BGAs) 108 are formed. Meanwhile, slits 131-1 and 132-1
are formed on the flexible printed circuit 103-1 in order to be
easily bent along the respective surfaces of the solid-state image
sensor 101.
In a similar manner, an RDL 121-2 is formed on the flexible printed
circuit 103-2, and terminals 122-2 corresponding to the number of
pad portions 106-2 of the solid-state image sensor 101 and
terminals 123-2 corresponding to the number of the external
terminals (BGAs) 108 are formed. Additionally, slits 131-2 and
132-2 are formed also on the flexible printed circuit 103-2.
(Circuit/Transparent Member Bonding Process)
In step S12, a circuit/transparent member bonding process is
performed.
In the circuit/transparent member bonding process, as illustrated
in FIG. 3B, the flexible printed circuit 103-1 formed with the RDL
121-1 is bonded (fixed) to a lower surface side of the transparent
member 102 with the adhesive 104-1, and the flexible printed
circuit 103-2 formed with the RDL 121-2 is bonded (fixed) to the
transparent member 102 with the adhesive 104-2.
However, the terminal 122-1 is provided on a surface included in
the flexible printed circuit 103-1 and located on the opposite side
of the surface bonded to the transparent member 102 with the
adhesive 104-1. In a similar manner, the terminal 122-2 is provided
on a surface included in the flexible printed circuit 103-2 and
located on the opposite side of the surface bonded to the
transparent member 102 with the adhesive 104-2.
(Flip Chip Bonding Process)
In step S13, a flip chip bonding process is performed.
In the flip chip bonding process, as illustrated in FIG. 3C, the
bump 107-1 is formed on the pad portion 106-1 provided on the light
receiving surface side of the solid-state image sensor 101, and the
bump 107-2 is formed on the pad portion 106-2.
Then, in the flip chip bonding process, as illustrated in FIG. 4A,
the bump 107-1 formed on the pad portion 106-1 of the solid-state
image sensor 101 is connected to the terminal 122-1 formed on the
flexible printed circuit 103-1, and the bump 107-2 formed on the
pad portion 106-2 of the solid-state image sensor 101 is connected
to the terminal 122-2 formed on the flexible printed circuit
103-2.
For example, seven terminals 122-1 are formed (FIG. 3A) on the
flexible printed circuit 103-1, and seven terminals 122-2 are
formed on the flexible printed circuit 103-2 (FIG. 3A), and the pad
portions 106 corresponding to the terminals 122 are provided and
the bumps 107 are formed on the respective pad portions 106 in the
solid-state image sensor 101, and therefore, the respective bumps
107 are connected to the terminals 122.
Thus, the flip chip bonding process is performed, and the
solid-state image sensor 101 is electrically connected to the
flexible printed circuit 103-1 and the flexible printed circuit
103-2 bonded to the transparent member 102.
(Circuit/Device Bonding Process)
In step S14, a circuit/device bonding process is performed.
In the circuit/device bonding process, as illustrated in FIG. 4B,
each of the flexible printed circuit 103-1 and the flexible printed
circuit 103-2 electrically connected to the solid-state image
sensor 101 and bonded to the transparent member 102 is bent along
the respective surfaces (side surface (right side surface or left
side surface) and the lower surface) of the solid-state image
sensor 101, and is bonded (fixed) to the lower surface (back
surface) of the solid-state image sensor 101 with the adhesive
105.
Specifically, as illustrated in FIG. 4B, the flexible printed
circuit 103-1 bonded to the transparent member 102 is bent to the
side of the right side surface of the solid-state image sensor 101
by the slit 131-1, and further bent to the lower surface side of
the solid-state image sensor 101 by the slit 132-1. In a similar
manner, the flexible printed circuit 103-2 bonded to the
transparent member 102 is bent to the side of the left side surface
of the solid-state image sensor 101 by the slit 131-2, and further
bent to the lower surface side of the solid-state image sensor 101
by the slit 132-2.
Then, surfaces which are included in the flexible printed circuit
103-1 and the flexible printed circuit 103-2 bent as described
above and are located on the lower surface side of the solid-state
image sensor 101 are bonded to the lower surface of the solid-state
image sensor 101 with the adhesive 105.
(External Terminal Mounting Process)
In step S15, an external terminal mounting process is
performed.
In the external terminal mounting process, as illustrated in C of
FIG. 4, an external terminal (BGA) 108 is mounted on a terminal
123-1 formed on the flexible printed circuit 103-1, and an external
terminal (BGA) 108 is mounted on a terminal 123-2 formed on the
flexible printed circuit 103-2.
In the external terminal mounting process, as illustrated in FIG.
4C, an external terminal (BGA) 108 is mounted on a terminal 123-1
formed on the flexible printed circuit 103-1, and an external
terminal (BGA) 108 is mounted on a terminal 123-2 formed on the
flexible printed circuit 103-2.
For example, since 3.times.3 terminals 123-1 are formed on the
flexible printed circuit 103-1 (FIG. 3A), totally nine external
terminals (BGAs) 108 are mounted on the respective terminals 123-1.
In a similar manner, for example, since 3.times.3 terminals 123-2
are formed on the flexible printed circuit 103-2 (FIG. 3A), totally
nine external terminals (BGAs) 108 are mounted on the respective
terminals 123-2. In other words, in the semiconductor device 10,
totally eighteen external terminals (BGAs) 108 are mounted.
The flow of the manufacturing processes of the semiconductor device
10 of the first embodiment has been described above. In the
manufacturing processes, performed are: the process of bonding
(fixing), to the transparent member 102, the flexible printed
circuits 103-1 and 103-2 having the wiring to connect the pad
portion 106 provided on the upper surface side of the solid-state
image sensor 101 to the external terminal (BGA) 108 provided on the
lower surface side; and the process of electrically connecting the
pad portion 106 provided on the upper surface side of the
solid-state image sensor 101 to the wiring of the flexible printed
circuits 103-1 and 103-2. Additionally, the semiconductor device 10
of FIG. 1 is manufactured by performing: the process of bending the
flexible printed circuits 103-1 and 103-2 along the respective
surfaces of the solid-state image sensor 101 such that the
positions of the end portions of the flexible printed circuits
located on the upper surface side of the solid-state image sensor
101 become positions different from a position in the space above
the light receiving surface, and further fixing the surfaces of the
flexible printed circuits located on the lower surface side of the
solid-state image sensor 101 to the lower surface of the
solid-state image sensor 101; and the process of mounting the
external terminals (BGAs) on the flexible printed circuits 103-1
and 103-2.
2. Second Embodiment
In a first embodiment described above, a flexible printed circuit
103-1 and a flexible printed circuit 103-2 are adapted to cover
left and right side surfaces (left side surface and right side
surface) of a solid-state image sensor 101, but a side surface on a
front side (front side surface) of the solid-state image sensor 101
and a side surface on a back side (back side surface) may also be
covered with the flexible printed circuit 103-1 and the flexible
printed circuit 103-2.
With adoption of such a structure, four side surfaces of the
solid-state image sensor 101 are surrounded by the flexible printed
circuit 103-1 and the flexible printed circuit 103-2, and
therefore, the solid-state image sensor 101 can be sealed. With
this structure, dust can be prevented from adhering to a pixel
array unit on which a plurality of pixels is two-dimensionally
arranged in the solid-state image sensor 101.
(Structure of Semiconductor Device)
FIGS. 5A, 5B, and 5C are views to describe a structure of a
semiconductor device 10 of the second embodiment.
FIG. 5A illustrates top views of the semiconductor device 10. The
top view on a left side out of the top view of FIG. 5A illustrates
a state in which a transparent member 102 is attached in the
semiconductor device 10 while the top view on a right side
illustrates a state in which the transparent member 102 is detached
and a light receiving surface 111 of the solid-state image sensor
101 is exposed.
Additionally, as illustrated in the top view in FIG. 5A on the
right side, a flexible printed circuit 103-1 and a flexible printed
circuit 103-2 are bend such that end portions thereof do not cover
above the light receiving surface 111 (so as not to block incident
light), in order words, such that positions of the end portions
become positions different from a position in a space above the
light receiving surface 111. With this structure, incident light is
prevented from being blocked by the flexible printed circuit 103-1
and the flexible printed circuit 103-2 in the semiconductor device
10, and there is no need to provide openings at the flexible
printed circuit 103-1 and the flexible printed circuit 103-2.
FIG. 5B is a front view of the semiconductor device 10 and is the
view in a case of viewing, from a direction of an arrow F1, the
semiconductor device 10 in the state where the transparent member
102 is attached illustrated in FIG. 5A on the left side. As
illustrated in FIG. 5B, in the semiconductor device 10 of the
second embodiment, provided is a structure in which not only a left
side surface and a right side surface of the solid-state image
sensor 101 but also a front side surface and a back side surface of
the solid-state image sensor 101 are covered with the flexible
printed circuit 103-1 and the flexible printed circuit 103-2.
FIG. 5C illustrates the structures of the flexible printed circuit
103-1 and the flexible printed circuit 103-2 in the second
embodiment.
In FIG. 5C, the flexible printed circuit 103-1 is provided with a
side surface bent portion 125-1 bent by a slit 133-1 and a side
surface bent portion 126-1 bent by the slit 134-1. Furthermore, the
flexible printed circuit 103-2 is provided with a side surface bent
portion 125-2 bent by a slit 133-2 and a side surface bent portion
126-2 bent by a slit 134-2.
In a manner similar to the above-described first embodiment, the
right side surface and the left side surface of the solid-state
image sensor 101 can be covered by bending the flexible printed
circuit 103-1 and the flexible printed circuit 103-2 having the
above-described structures along the respective surfaces (upper
surface, side surfaces (right side surface and left side surface),
and lower surface) of the solid-state image sensor 101.
Additionally, the front side surface of the solid-state image
sensor 101 can be covered by bending the side surface bent portion
125-1 by the slit 133-1 in the flexible printed circuit 103-1, and
by bending the side surface bent portion 125-2 by the slit 133-2 in
the flexible printed circuit 103-2. Furthermore, the back side
surface of the solid-state image sensor 101 can be covered by
bending the side surface bent portion 126-1 by the slit 134-1 in
the flexible printed circuit 103-1, and by bending the side surface
bent portion 126-2 by the slit 134-2 in the flexible printed
circuit 103-2.
Thus, not only the left and right side surfaces (left side surface
and right side surface) of the solid-state image sensor 101 but
also the front and back side surfaces (front side surface and back
side surface) can also be covered with the flexible printed circuit
103-1 and the flexible printed circuit 103-2 by bending the
respective side surface bent portions of the flexible printed
circuit 103-1 and the flexible printed circuit 103-2. With this
structure, the four side surfaces (left side surface, right side
surface, front side surface, and back side surface) of the
solid-state image sensor 101 are covered with the flexible printed
circuits 103, and the solid-state image sensor 101 can be sealed in
the semiconductor device 10, and therefore, dust can be prevented
from adhering to each of pixels arranged in a pixel array unit.
(Flow of Manufacturing Processes of Semiconductor Device)
FIGS. 6A, 6B, and 6C are views to describe respective manufacturing
processes of the semiconductor device 10 of the second
embodiment.
Note that the manufacturing processes of the semiconductor device
10 of the second embodiment are basically performed in a flow
similar to manufacturing processes of the semiconductor device 10
of the above-described first embodiment (FIG. 2), but are different
in following points: the flexible printed circuits 103 are provided
with the side surface bent portions 125 and 126; and the front and
back side surfaces (front side surface and back side surface) of
the solid-state image sensor 101 are covered with the side surface
bent portions 125 and 126.
In the following, the flow of the manufacturing processes of the
semiconductor device 10 of the second embodiment will be described
focusing on these different points while associating schematic
views in FIGS. 6A, 6B, and 6C with the respective processes (steps
S11 to S15) in FIG. 2. Note that a top view and a front view of the
semiconductor device 10 are illustrated in each of FIGS. 6A, 6B,
and 6C.
In a manner similar to the manufacturing processes of the
semiconductor device 10 of the first embodiment (FIG. 2), in the
manufacturing processes of the semiconductor device 10 of the
second embodiment also, a redistribution layer (RDL) forming
process (S11) and a circuit/transparent member bonding process
(S12) are performed, and the flexible printed circuit 103-1 formed
with an RDL 121-1 is bonded (fixed) to a lower surface side of the
transparent member 102 with an adhesive 104-1, and the flexible
printed circuit 103-2 formed with an RDL 121-2 is bonded (fixed) to
the same with an adhesive 104-2.
However, in the second embodiment, the side surface bent portion
125-1 and the side surface bent portion 126-1 are provided in the
flexible printed circuit 103-1, and the side surface bent portion
125-2 and the side surface bent portion 126-2 are provided in the
flexible printed circuit 103-2.
Next, in a flip chip bonding process (S13), a bump 107-1 is formed
on a pad portion 106-1 provided on the light receiving surface side
of the solid-state image sensor 101 and a bump 107-2 is formed on a
pad portion 106-2. Then, in the flip chip bonding process (S13), as
illustrated in FIG. 6A, the bump 107-1 formed on the pad portion
106-1 of the solid-state image sensor 101 is connected to a
terminal 122-1 formed on the flexible printed circuit 103-1, and
the bump 107-2 formed on the pad portion 106-2 of the solid-state
image sensor 101 is connected to a terminal 122-2 formed on the
flexible printed circuit 103-2.
Thus, the flip chip bonding process (S13) is performed, and the
solid-state image sensor 101 is electrically connected to the
flexible printed circuit 103-1 and the flexible printed circuit
103-2.
Next, as illustrated in FIG. 6B, in a circuit/device bonding
process (S14), the flexible printed circuit 103-1 and flexible
printed circuit 103-2 electrically connected to the solid-state
image sensor 101 and bonded to the transparent member 102 are bent
along the respective surfaces (upper surface, side surface (right
side surface or left side surface), and the lower surface) of the
solid-state image sensor 101, and are bonded (fixed) to the lower
surface (back surface) of the solid-state image sensor 101 with an
adhesive 105. With this structure, the flexible printed circuit
103-1 and the flexible printed circuit 103-2 are bent along the
respective surfaces of the solid-state image sensor 101, and the
left and right side surfaces (left side surface and right side
surface) of the solid-state image sensor 101 are covered by the
flexible printed circuits 103.
Additionally, as illustrated in FIG. 6C, in the circuit/device
bonding process (S14), the side surface bent portion 125-1 and the
side surface bent portion 126-1 of the flexible printed circuit
103-1 bonded to the lower surface (back surface) of the solid-state
image sensor 101, and the side surface bent portion 125-2 and the
side surface bent portion 126-2 of the flexible printed circuit
103-2 bonded to the same lower surface are bent to the sides of the
respective side surfaces, and the front and back side surfaces
(front side surface and back side surface) of the solid-state image
sensor 101 are covered with the flexible printed circuits 103. With
this structure, in the semiconductor device 10, the four side
surfaces (left side surface, right side surface, front side
surface, and back side surface) of the solid-state image sensor 101
are covered by the flexible printed circuits 103.
Next, in an external terminal mounting process (S15), in a manner
similar to the manufacturing processes of the semiconductor device
10 of the first embodiment (FIG. 2), an external terminal (BGA) 108
is mounted on a terminal 123-1 formed on the flexible printed
circuit 103-1 and an external terminal (BGA) 108 is mounted on a
terminal 123-2 formed on the flexible printed circuit 103-2.
The manufacturing processes of the semiconductor device 10 of the
second embodiment have been described above.
Thus, since the four side surfaces of the solid-state image sensor
101 are surrounded by the flexible printed circuit 103-1 and the
flexible printed circuit 103-2 in the semiconductor device 10 of
the second embodiment, the solid-state image sensor 101 can be
sealed. With this structure, dust can be prevented from adhering to
a pixel array unit on which a plurality of pixels is
two-dimensionally arranged in the solid-state image sensor 101.
Additionally, in the semiconductor device 10 of the second
embodiment, since incident light incident on the light receiving
surface of the solid-state image sensor 101 is prevented from being
blocked by the flexible printed circuit 103-1 and the flexible
printed circuit 103-2 in a manner similar to the semiconductor
device 10 of the first embodiment, there is no need to provide
openings at the flexible printed circuit 103-1 and the flexible
printed circuit 103-2.
3. Third Embodiment
In a second embodiment described above, provided is a structure in
which a solid-state image sensor 101 is sealed in a manner where
four side surfaces (left side surface, right side surface, front
side surface, and back side surface) of the solid-state image
sensor 101 are surrounded by flexible printed circuits 103, but may
also have a structure in which respective surfaces of the flexible
printed circuits 103 surrounding the four side surfaces of the
solid-state image sensor 101 each have an arc shape having a
predetermined curvature. Additionally, in a case of adopting such a
structure, a space is generated at a corner portion in each of four
corners of a semiconductor device 10 by forming each of the
surfaces of the flexible printed circuits 103 to have the arc
shape, but the solid-state image sensor 101 is sealed by using a
sealing member such as a resin.
With this structure, dust can be prevented from adhering to a pixel
array unit on which a plurality of pixels is two-dimensionally
arranged in the solid-state image sensor 101. Additionally, since
the surfaces of the flexible printed circuits 103 surrounding the
four side surfaces (left side surface, right side surface, front
side surface, and back side surface) of the solid-state image
sensor 101 each have the arc shape, strength against external
impact applied to the four side surfaces is enhanced, and
therefore, the solid-state image sensor 101 can be protected from
such external impact.
(Structure of Semiconductor Device)
FIGS. 7A and 7B are views to describe a structure of the
semiconductor device 10 of the third embodiment.
FIG. 7A is a top view of the semiconductor device 10. Additionally,
FIG. 7B is a front view of the semiconductor device 10 and also is
a view in a case of viewing, from a direction of an arrow F2, the
semiconductor device 10 illustrated in FIG. 7A.
As illustrated in FIG. 7A, in the semiconductor device 10 of the
third embodiment, a side surface bent portion 125-1 and a side
surface bent portion 126-1 are provided in a flexible printed
circuit 103-1, and a side surface bent portion 125-2 and a side
surface bent portion 126-2 are provided in a flexible printed
circuit 103-2 in a manner similar to a semiconductor device 10 of
the second embodiment.
Additionally, in a manner similar to the above-described second
embodiment, the right side surface and the left side surface of the
solid-state image sensor 101 can be covered by bending the flexible
printed circuit 103-1 and the flexible printed circuit 103-2 having
the above-described structures along respective surfaces (upper
surface, side surfaces (right side surface and left side surface),
and lower surface) of the solid-state image sensor 101. However, in
the third embodiment, the surface of the flexible printed circuit
103-1 which covers the right side surface of the solid-state image
sensor 101 has the arc shape having the predetermined curvature. In
a similar manner, the surface of the flexible printed circuit 103-2
which covers the left side surface of the solid-state image sensor
101 has the arc shape having the predetermined curvature.
Additionally, the front side surface of the solid-state image
sensor 101 can be covered by bending the side surface bent portion
125-1 by a slit 133-1 in the flexible printed circuit 103-1, and by
bending the side surface bent portion 125-2 by a slit 133-2 in the
flexible printed circuit 103-2. However, in the third embodiment,
the surfaces (side surface bent portion 125-1 and side surface bent
portion 125-2) of the flexible printed circuit 103-1 and the
flexible printed circuit 103-2 which cover the front side surface
of the solid-state image sensor 101 each have the arc shape having
the predetermined curvature.
Furthermore, the back side surface of the solid-state image sensor
101 can be covered by bending the side surface bent portion 126-1
by a slit 134-1 in the flexible printed circuit 103-1, and by
bending the side surface bent portion 126-2 by a slit 134-2 in the
flexible printed circuit 103-2. However, in the third embodiment,
the surfaces (side surface bent portion 126-1 and side surface bent
portion 126-2) of the flexible printed circuit 103-1 and the
flexible printed circuit 103-2 which cover the back side surface of
the solid-state image sensor 101 each have the arc shape having the
predetermined curvature.
Thus, the four side surfaces (left side surface, right side
surface, front side surface, and back side surface) of the
solid-state image sensor 101 can be surrounded by the flexible
printed circuits 103 by bending the respective side surface bent
portions of the flexible printed circuits 103, but spaces are
generated at the corner portions of the four corners of the
semiconductor device 10 because each of the surfaces of the
flexible printed circuits 103 has the arc shape.
Here, in the semiconductor device 10, the spaces generated at the
corner portions of the four corners are sealed by using sealing
members 151-1 to 151-4 such as a resin, thereby sealing the
solid-state image sensor 101. With this structure, in the
semiconductor device 10, the four side surfaces (left side surface,
right side surface, front side surface, and back side surface) of
the solid-state image sensor 101 are surrounded by the surfaces of
the flexible printed circuits 103 (surfaces each formed in the arc
shape having the predetermined curvature), and furthermore, the
spaces generated at the corner portions of the four corners can be
sealed with the sealing members 151, and therefore, dust can be
prevented from adhering to each of pixels arranged in a pixel array
unit.
Additionally, since the surfaces of the flexible printed circuits
103 surrounding the four side surfaces (left side surface, right
side surface, front side surface, and back side surface) of the
solid-state image sensor 101 each have the arc shape, strength
against external impact applied to the four side surfaces is
enhanced, and therefore, the solid-state image sensor 101 can be
protected from such external impact.
(Flow of Manufacturing Processes of Semiconductor Device)
FIGS. 8A, 8B, 8C, and 8D are views to describe respective
manufacturing processes of the semiconductor device 10 of the third
embodiment.
Meanwhile, the manufacturing processes of the semiconductor device
10 of the third embodiment are performed in a flow basically
similar to the flow of manufacturing processes of the semiconductor
device 10 of the first embodiment described above (FIG. 2), but are
different in following points: the side surface bent portions 125
and 126 are provided in the flexible printed circuits 103, and the
front and back side surfaces of the solid-state image sensor 101
are surrounded by the side surface bent portions 125 and 126; the
respective surfaces of the flexible printed circuits 103
surrounding the four side surfaces of the solid-state image sensor
101 each have the arc shape having the predetermined curvature; and
the corner portions of the four corners are sealed with the sealing
members 151.
In the following, the flow of the manufacturing processes of the
semiconductor device 10 of the third embodiment will be described
focusing on these different points while associating schematic
views in FIGS. 8A, 8B, 8C, and 8D with the respective processes
(steps S11 to S15) in FIG. 2. Note that a top view and a front view
of the semiconductor device 10 are illustrated in each of FIGS. 8A,
8B, 8C, and 8D.
In a manner similar to the manufacturing processes of the
semiconductor device 10 of the first embodiment (FIG. 2), in the
manufacturing processes of the semiconductor device 10 of the third
embodiment also, a redistribution layer (RDL) forming process (S11)
and a circuit/transparent member bonding process (S12) are
performed, and the flexible printed circuit 103-1 formed with an
RDL 121-1 is bonded (fixed) to a lower surface side of a
transparent member 102 with an adhesive 104-1, and the flexible
printed circuit 103-2 formed with an RDL 121-2 is bonded (fixed) to
the same with an adhesive 104-2.
However, in the third embodiment, the side surface bent portion
125-1 and the side surface bent portion 126-1 are provided in the
flexible printed circuit 103-1, and the side surface bent portion
125-2 and the side surface bent portion 126-2 are provided in the
flexible printed circuit 103-2.
Next, in a flip chip bonding process (S13), a bump 107-1 is formed
on a pad portion 106-1 provided on a light receiving surface side
of the solid-state image sensor 101, and a bump 107-2 is formed on
a pad portion 106-2. Then, in the flip chip bonding process (S13),
as illustrated in FIG. 8A, the bump 107-1 formed on the pad portion
106-1 of the solid-state image sensor 101 is connected to a
terminal 122-1 formed on the flexible printed circuit 103-1, and
the bump 107-2 formed on the pad portion 106-2 of the solid-state
image sensor 101 is connected to a terminal 122-2 formed on the
flexible printed circuit 103-2.
Thus, the flip chip bonding process (S13) is performed, and the
solid-state image sensor 101 is electrically connected to the
flexible printed circuit 103-1 and the flexible printed circuit
103-2.
Next, as illustrated in FIG. 8B, in a circuit/device bonding
process (S14), the flexible printed circuit 103-1 and the and
flexible printed circuit 103-2 electrically connected to the
solid-state image sensor 101 and bonded to the transparent member
102 are bent along the respective surfaces (upper surface, side
surface (right side surface or left side surface), and the lower
surface) of the solid-state image sensor 101, and are bonded
(fixed) to the lower surface (back surface) of the solid-state
image sensor 101 with an adhesive 105.
As a result, the flexible printed circuit 103-1 and the flexible
printed circuit 103-2 are bent along the respective surfaces of the
solid-state image sensor 101, and the left and right side surfaces
(right side surface and left side surface) of the solid-state image
sensor 101 are surrounded by the flexible printed circuits 103, and
the respective surfaces of the flexible printed circuits 103 on the
sides of the left and right side surfaces each have the arc shape
having the predetermined curvature. Meanwhile, a height of the arc
(arc height) can be, for example, equal to or less than a thickness
of the solid-state image sensor 101.
Additionally, as illustrated in FIG. 8C, in the circuit/device
bonding process (S14), the side surface bent portion 125-1 and the
side surface bent portion 126-1 of the flexible printed circuit
103-1 bonded to the lower surface (back surface) of the solid-state
image sensor 101, and the side surface bent portion 125-2 and the
side surface bent portion 126-2 of the flexible printed circuit
103-2 bonded to the same lower surface are bent to the sides of the
respective side surfaces, and the front and back side surfaces
(front side surface and back side surface) of the solid-state image
sensor 101 are surrounded by the flexible printed circuits 103.
However, the respective surfaces (side surface bent portions 125-1
and 125-2 and the side surface bent portions 126-1 and 126-2) of
the flexible printed circuits 103 on the sides of the front and
back side surfaces of the solid-state image sensor 101 each have
the arc shape having the predetermined curvature. Note that the
height of the arc can be, for example, equal to or less than the
thickness of the solid-state image sensor 101.
Thus, the four side surfaces (left side surface, right side
surface, front side surface, and back side surface) of the
solid-state image sensor 101 can be surrounded by the flexible
printed circuits 103 by bending the respective side surface bent
portions of the flexible printed circuits 103, but the spaces are
generated at the corner portions of the four corners of the
semiconductor device 10 by forming each of the surfaces of the
flexible printed circuits 103 in the arc shape. Therefore, in the
circuit/device bonding process (S14), as illustrated in FIG. 8D,
the spaces generated at the corner portions of the four corners are
sealed by using the sealing members 151-1 to 151-4 such as a
resin.
Next, in an external terminal mounting process (S15), in a manner
similar to the manufacturing processes of the semiconductor device
10 of the first embodiment (FIG. 2), an external terminal (BGA) 108
is mounted on a terminal 123-1 formed on the flexible printed
circuit 103-1 and an external terminal (BGA) 108 is mounted on a
terminal 123-2 formed on the flexible printed circuit 103-2.
The manufacturing processes of the semiconductor device 10 of the
third embodiment have been described above.
Thus, in the semiconductor device 10 of the third embodiment, since
the surfaces of the flexible printed circuits 103 surrounding the
four side surfaces (left side surface, right side surface, front
side surface, and back side surface) of the solid-state image
sensor 101 each have the arc shape having the predetermined
curvature, strength against external impact applied to the four
side surfaces is enhanced, and therefore, the solid-state image
sensor 101 can be protected from such external impact.
Additionally, the spaces are generated at the corner portions of
the four corners of the semiconductor device 10 by forming each of
the surfaces of the flexible printed circuits 103 in the arc shape,
but since the solid-state image sensor 101 is sealed by using the
sealing members 151-1 to 151-4 such as a resin, dust can be
prevented from adhering to the pixel array unit in which a
plurality of pixels are two-dimensionally arranged in the
solid-state image sensor 101.
Meanwhile, in the above-described first to third embodiments, the
case of using the two flexible printed circuits 103 (flexible
printed circuits 103-1 and 103-2) has been described as an example,
but the present technology is not limited by the number of flexible
printed circuits 103, and one or three or more flexible printed
circuits 103 may be used as far as the above-described functions
can be implemented. Furthermore, in the third embodiment, the
spaces formed at the corner portions of the four corners of the
semiconductor device 10 are sealed by using the sealing members
151-1 to 151-4, but the spaces are not necessarily sealed. In this
case, the solid-state image sensor 101 cannot be sealed, but the
solid-state image sensor 101 can be protected from external impact
because the surfaces of the flexible printed circuits 103
surrounding the four side surfaces of the solid-state image sensor
101 each have the arc shape. Additionally, it is not necessary to
form all of the surfaces of the flexible printed circuits 103
surrounding the four side surfaces of the solid-state image sensor
101 in the arc shape, and only part of the surfaces may have formed
in the arc shape.
4. Configuration of Electronic Apparatus
FIG. 9 is a diagram illustrating an exemplary configuration of an
electronic apparatus 300 having a semiconductor device in which the
present technology is applied.
The electronic apparatus 300 in FIG. 9 is an electronic apparatus
such as an imaging device like a digital still camera or a video
camera, or a portable terminal device like a smartphone or a tablet
type terminal.
In FIG. 9, the electronic apparatus 300 includes a semiconductor
device 301, a DSP circuit 302, a frame memory 303, a display unit
304, a recording unit 305, an operation unit 306, and a power
supply unit 307. Additionally, the DSP circuit 302, frame memory
303, display unit 304, recording unit 305, operation unit 306, and
power supply unit 307 are mutually connected via a bus line 308 in
the electronic apparatus 300.
The semiconductor device 301 corresponds to a semiconductor device
10 of first to third embodiments, and has a cross-sectional
structure of FIG. 1, for example.
The DSP circuit 302 is a camera signal processing circuit to
process a signal supplied from (a solid-state image sensor 101 of)
the semiconductor device 301. The DSP circuit 302 outputs image
data obtained by processing a signal from the semiconductor device
301. The frame memory 303 temporarily holds, per frame, image data
processed by the DSP circuit 302.
The display unit 304 includes, for example, a panel type display
device such as a liquid crystal panel or an organic electro
luminescence (EL) panel, and displays a moving image or a still
image captured by (the solid-state image sensor 101) of the
semiconductor device 301. The recording unit 305 records image data
of a moving image or a still image captured by (the solid-state
image sensor 101 of) the semiconductor device 301 on a recording
medium such as a semiconductor memory or a hard disk.
The operation unit 306 outputs operation commands for various
functions held by the electronic apparatus 300 in accordance with
operation by a user. The power supply unit 307 suitably supplies
various kinds of power supply to be operation power sources of the
DSP circuit 302, frame memory 303, display unit 304, recording unit
305, and operation unit 306 to these supply targets.
The electronic apparatus 300 has the configured as described
above.
5. Exemplary Uses of Semiconductor Device
FIG. 10 is a diagram illustrating exemplary uses of a semiconductor
device 10 including the solid-state image sensor 101 as an image
sensor.
For example, the above-described semiconductor device 10 can be
used in various cases of sensing light such as visible light,
infrared light, ultraviolet light, and X-rays as described below.
In other words, as illustrated in FIG. 10, the semiconductor device
10 can be used in devices used not only in a field of appreciation
in which images for appreciation are photographed, but also in a
field of traffic, a field of home electronics, a field of
medical/health care, a field of security, a field of beauty, a
field of sports, a field of agriculture, or the like, for
example.
Specifically, in the field of appreciation, the semiconductor
device 10 can be used in a device (e.g., an electronic apparatus
300 in FIG. 9) such as a digital camera, a smartphone, a cellular
phone provided with a camera function in order to photograph images
for appreciation as described above.
In the field of traffic, for example, the semiconductor device 10
can be used in a device provided for traffic, such as an on-vehicle
sensor to image a front side, a back side, a periphery of a
vehicle, a car interior, etc., a monitoring camera to monitor a
traveling vehicle and a road, or a ranging sensor to measure a
distance between vehicles in order to perform safety drive such as
automatic stop, recognize driver's condition and the like.
In the field of home electronics, for example, the semiconductor
device 10 can be used in a device provided in home electronics,
such as a television receiver, a refrigerator, and an air
conditioner in order to photograph a user's gesture and operate the
device in accordance with the gesture. Additionally, in the field
of medical/health care, for example, the semiconductor device 10
can be used in a device provided for medical or health care, such
as an endoscope or a device to photograph a blood vessel by
receiving infrared light.
In the field of security, for example, the semiconductor device 10
can be used in a device provided for security, such as a security
camera for crime prevention or a camera for person authentication.
Additionally, in the field of beauty, for example, the
semiconductor device 10 can be used in a device provided for beauty
purposes, such as a skin measuring device to photograph a skin or a
microscope to photograph a scalp.
In the field of sports, for example, the semiconductor device 10
can be used in a device provided for sports, such as an action
camera or a wearable camera intended for sports use and the like.
Furthermore, in the field of agriculture, for example, the
semiconductor device 10 can be used in a device provided for
agricultural use, such as a camera to monitor condition of fields
and crops.
Meanwhile, the embodiments of the present technology are not
limited to the above-described embodiments, and various kinds of
modifications can be made within a range without departing from a
gist of the present technology. For example, an embodiment in
combination of all or part of the above-described plurality of
embodiments can be adopted.
Furthermore, the present technology can also have following
configurations.
(1) A semiconductor device including:
a solid-state image sensor having a pixel array unit in which a
plurality of pixels each having a photoelectric conversion element
is two-dimensionally arranged in a matrix; and
a flexible printed circuit having wiring adapted to connect a pad
portion provided on an upper surface side to be located on a light
receiving surface side of the solid-state image sensor to an
external terminal provided on a lower surface side opposite to the
upper surface side,
in which the flexible printed circuit is arranged along respective
surfaces of the solid-state image sensor such that a position of an
end portion located on the upper surface side becomes a position
different from a position in a space above the light receiving
surface.
(2) The semiconductor device recited in (1), in which
the flexible printed circuit includes a first flexible printed
circuit and a second flexible printed circuit,
the first flexible printed circuit is bent along an upper surface,
one side surface out of four side surfaces, and a lower surface of
the solid-state image sensor, and
the second flexible printed circuit is bent along the upper
surface, a side surface on an opposite side of the one side surface
out of the four side surfaces, and the lower surface of the
solid-state image sensor.
(3) The semiconductor device recited in (2), further including a
transparent member adapted to transmit light incident on the light
receiving surface,
in which
the first flexible printed circuit has a partial region of one
surface fixed to the solid-state image sensor, and has a partial
region of the other surface fixed to the transparent member,
and
the second flexible printed circuit has a partial region of one
surface fixed to the solid-state image sensor, and has a partial
region of the other surface fixed to the transparent member.
(4) The semiconductor device recited in (3), in which
the first flexible printed circuit has a first side surface bent
portion to be bent along two other side surfaces out of the four
side surfaces of the solid-state image sensor in order to seal the
solid-state image sensor, and
the second flexible printed circuit has a second side surface bent
portion along two other side surfaces out of the four side surfaces
of the solid-state image sensor in order to seal the solid-state
image sensor.
(5) The semiconductor device recited in (4), in which surfaces bent
along the four side surfaces of the solid-state image sensor are
each formed in an arc shape having a predetermined curvature in the
first flexible printed circuit and the second flexible printed
circuit.
(6) The semiconductor device recited in (5), further including a
sealing member adapted to seal spaces generated by forming, in the
arc shape having the predetermined curvature, each of the surfaces
bent along the four side surfaces of the solid-state image
sensor.
(7) The semiconductor device recited in (6), in which the sealing
member is a resin.
(8) The semiconductor device recited in any one of (2) to (7), in
which a slit is formed in a portion to be bent in each of the first
flexible printed circuit and the second flexible printed
circuit.
(9) A manufacturing method for a semiconductor device,
including:
fixing a flexible printed circuit to a transparent member adapted
to transmit light incident on a light receiving surface, the
flexible printed circuit having wiring adapted to connect a pad
portion provided on an upper surface side to be located on a light
receiving surface side of a solid-state image sensor to an external
terminal provided on a lower surface side opposite to the upper
surface side;
electrically connecting the pad portion provided in the solid-state
image sensor to the wiring of the flexible printed circuit;
bending the flexible printed circuit along respective surfaces of
the solid-state image sensor such that a position of an end portion
located on the upper surface side becomes a position different from
a position in a space above the light receiving surface, and
further fixing a surface located on the lower surface side of the
solid-state image sensor to the lower surface of the solid-state
image sensor; and
mounting the external terminal on the flexible printed circuit.
(10) An electronic apparatus including a semiconductor device
including:
a solid-state image sensor having a pixel array unit in which a
plurality of pixels each having a photoelectric conversion element
is two-dimensionally arranged in a matrix; and
a flexible printed circuit having wiring adapted to connect a pad
portion provided on an upper surface side to be a light receiving
surface side of the solid-state image sensor to an external
terminal provided on a lower surface side opposite to the upper
surface side;
in which the flexible printed circuit is arranged along respective
surfaces of the solid-state image sensor such that a position of an
end portion located on the upper surface side of the solid-state
image sensor differs from a position in a space above the light
receiving surface.
REFERENCE SIGNS LIST
10 Semiconductor device 101 Solid-state image sensing device 102
Transparent member 103, 103-1, 103-2 Flexible printed circuit
104-1, 104-2 Adhesive 105 Adhesive 106-1, 106-2 Pad portion 107-1,
107-2 Bump 108 External terminal 125-1, 125-2, 126-1, 126-2 Side
surface bent portion 151-1, 151-2, 151-3, 151-4 Sealing member 300
Electronic apparatus 301 Semiconductor device
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