U.S. patent number 11,127,437 [Application Number 16/842,318] was granted by the patent office on 2021-09-21 for managing startups of bandgap reference circuits in memory systems.
This patent grant is currently assigned to Macronix International Co., Ltd.. The grantee listed for this patent is Macronix International Co., Ltd.. Invention is credited to Jian-Syu Lin, Shang-Chi Yang.
United States Patent |
11,127,437 |
Lin , et al. |
September 21, 2021 |
Managing startups of bandgap reference circuits in memory
systems
Abstract
Systems, methods, circuits, devices, and apparatus including
computer-readable mediums for managing startups of bandgap
reference circuits in memory systems, e.g., non-volatile memory
systems. In one aspect, an integrated circuit includes: a power
supply switch configured to receive an original supply voltage and
provide a controlled supply voltage controllable by an enabling
signal, an operational amplifier configured to receive input
voltages and the controlled supply voltage and output a gate
control voltage, output circuitry configured to receive the gate
control voltage and the controlled supply voltage, provide the
input voltages to the operational amplifier, and output a reference
voltage, and initialization circuitry coupled to the power supply
switch, the operational amplifier, and the output circuitry and
configured to initialize the controlled supply voltage and the gate
control voltage to ground based on the enabling signal, such that
the reference voltage increases from ground to a target voltage
during a startup.
Inventors: |
Lin; Jian-Syu (Chiayi,
TW), Yang; Shang-Chi (Changhua, TW) |
Applicant: |
Name |
City |
State |
Country |
Type |
Macronix International Co., Ltd. |
Hsinchu |
N/A |
TW |
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Assignee: |
Macronix International Co.,
Ltd. (Hsinchu, TW)
|
Family
ID: |
75162543 |
Appl.
No.: |
16/842,318 |
Filed: |
April 7, 2020 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20210098031 A1 |
Apr 1, 2021 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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62908602 |
Oct 1, 2019 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H03F
1/301 (20130101); H03F 3/45183 (20130101); H03F
3/45269 (20130101); G05F 3/30 (20130101); G11C
5/148 (20130101); G05F 3/20 (20130101); G11C
5/147 (20130101); G11C 7/20 (20130101); H03K
17/223 (20130101); H03F 2200/447 (20130101); G11C
16/30 (20130101); H03K 2017/226 (20130101) |
Current International
Class: |
G11C
5/14 (20060101); G05F 3/30 (20060101); H03F
1/30 (20060101); H03K 17/22 (20060101); H03F
3/45 (20060101); G05F 3/20 (20060101); G11C
16/30 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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103425171 |
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Dec 2013 |
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CN |
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200814079 |
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Mar 2008 |
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TW |
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200827978 |
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Jul 2008 |
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TW |
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M422090 |
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Feb 2012 |
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TW |
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WO 2013/067192 |
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May 2013 |
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WO |
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WO 2017/105796 |
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Jun 2017 |
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WO |
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Other References
K Lasanen et al., "Design of a 1 V low power CMOS bandgap reference
based on resistive subdivision," The 2002 45th Midwest Symposium on
Circuits and Systems, 2002. cited by applicant .
H. Banba et al., "A CMOS Bandgap Reference Circuit with Sub-1-V
Operation", IEEE Journal of Solid-State Circuits, vol.
34(5):670-674, 1999. cited by applicant .
B. Razavi, "Design of Analog CMOS Integrated Circuits", Second
edition, 2017. cited by applicant .
Taiwan Office Action issued in corresponding Application No. TW
11020265890 (English Translation not available) dated Mar. 23,
2021, 5 pages. cited by applicant.
|
Primary Examiner: Kim; Jung
Attorney, Agent or Firm: Fish & Richardson P.C.
Parent Case Text
CROSS-REFERENCE TO RELATED APPLICATION
This application claims priority under 35 USC .sctn. 119(e) to U.S.
Provisional Patent Application Ser. No. 62/908,602, filed on Oct.
1, 2019, the entire content of which is hereby incorporated by
reference.
Claims
What is claimed is:
1. An integrated circuit comprising: a power supply switch
configured to receive an original supply voltage and provide a
controlled supply voltage controllable by an enabling signal; an
operational amplifier configured to receive input voltages and the
controlled supply voltage and output a gate control voltage; output
circuitry configured to receive the gate control voltage from the
operational amplifier and the controlled supply voltage from the
power supply switch, provide the input voltages to the operational
amplifier, and output a reference voltage; and initialization
circuitry coupled to the power supply switch, the operational
amplifier, and the output circuitry and configured to initialize
the controlled supply voltage and the gate control voltage to a
ground based on the enabling signal.
2. The integrated circuit of claim 1, wherein the initialization
circuitry is configured such that the reference voltage increases
from the ground to a target voltage during a startup of the
integrated circuit.
3. The integrated circuit of claim 1, wherein the power supply
switch comprises a transistor having a gate for receiving the
enabling signal and configured to generate the controlled supply
voltage based on the original supply voltage in response to the
enabling signal.
4. The integrated circuit of claim 3, wherein the power supply
switch comprises an inverter coupled to the gate of the transistor
and configured to convert a control signal into the enabling
signal.
5. The integrated circuit of claim 4, wherein, during a startup in
a power-on stage, the control signal is based on a power-on-reset
(POR) signal associated with the original supply voltage.
6. The integrated circuit of claim 4, wherein, during a startup in
a normal operational stage, the original supply voltage remains at
a target supply voltage, and the control signal comprises a step
signal.
7. The integrated circuit of claim 1, wherein the initialization
circuitry is configured to initialize the input voltages to be
grounded based on the enabling signal, together with the controlled
supply voltage and the gate control voltage.
8. The integrated circuit of claim 1, wherein the output circuitry
is configured to stabilize the reference voltage to be independent
from temperature, process corner, voltage, or a combination
thereof.
9. The integrated circuit of claim 1, wherein the initialization
circuitry comprises a plurality of transistors having gates for
receiving the enabling signal, sources coupled to a ground, and
drains respectively coupled to the operational amplifier, the power
supply switch, and the output circuitry.
10. The integrated circuit of claim 9, wherein the operational
amplifier comprises p-channel transistors and n-channel
transistors, wherein sources of the p-channel transistors are
coupled to the power supply switch and configured to receive the
controlled supply voltage, gates of the p-channel transistors are
coupled to a drain of a first transistor of the initialization
circuitry, and drains of the p-channel transistors are coupled to
drains of the n-channel transistors, and wherein gates of the
n-channel transistors are configured to receive the input voltages
from the output circuitry and respectively coupled to drains of
second and third transistors of the initialization circuitry.
11. The integrated circuit of claim 10, wherein the output
circuitry comprises: a plurality of p-channel transistors having
gates coupled to the drain of one of the p-channel transistors of
the operational amplifier and receive the gate control voltage,
wherein the gates of the p-channel transistors of the output
circuitry are coupled to a drain of a fourth transistor of the
initialization circuitry; and a plurality of bipolar junction
transistors (BJTs) having emitters respectively coupled to drains
of the p-channel transistors of the output circuitry, and bases and
collectors of the plurality of BJTs are coupled to the ground,
wherein the reference voltage is output at a connection node
between a drain of one of the p-channel transistors of the output
circuitry and an emitter of one of a corresponding BJT of the BJTs
of the output circuitry.
12. The integrated circuit of claim 11, further comprising: a
coupling capacitor having a first end coupled to the power supply
switch for receiving the controlled supply voltage and a second end
coupled to the drain of the fourth transistor of the initialization
circuitry and the gates of the p-channel transistors of the output
circuitry.
13. The integrated circuit of claim 1, further comprising a
coupling capacitor having a first end coupled to the power supply
switch for receiving the controlled supply voltage and a second end
coupled to an output of the operational amplifier for outputting
the gate control voltage, wherein the coupling capacitor is
configured such that the gate control voltage varies substantially
proportionally and synchronously with the controlled supply voltage
during the startup.
14. A memory system comprising: a memory; a memory controller
coupled to the memory; and a bandgap reference circuit coupled to
the memory controller and configured to provide a bandgap reference
voltage to the memory controller for performing one or more actions
on the memory, the bandgap reference circuit comprising: a power
supply switch configured to receive an original supply voltage and
provide a controlled supply voltage controllable by an enabling
signal; an operational amplifier configured to receive input
voltages and the controlled supply voltage and output a gate
control voltage; output circuitry configured to receive the gate
control voltage from the operational amplifier and the controlled
supply voltage from the power supply switch, provide the input
voltages to the operational amplifier, and output an output voltage
as the bandgap reference voltage; and initialization circuitry
coupled to the power supply switch, the operational amplifier, and
the output circuitry and configured to initialize the controlled
supply voltage and the gate control voltage to a ground based on
the enabling signal.
15. The memory system of claim 14, further comprising: a coupling
capacitor having a first end coupled to the power supply switch for
receiving the controlled supply voltage and a second end coupled to
an output of the operational amplifier for outputting the gate
control voltage, wherein the coupling capacitor is configured such
that the gate control voltage varies substantially proportional and
synchronously with the controlled supply voltage during a startup
of the bandgap reference circuit.
16. The memory system of claim 14, wherein the initialization
circuitry comprises a plurality of transistors having gates for
receiving the enabling signal, sources coupled to a ground, and
drains respectively coupled to the operational amplifier, the power
supply switch, and the output circuitry.
17. The memory system of claim 16, wherein the operational
amplifier comprises p-channel transistors and n-channel
transistors, wherein sources of the p-channel transistors are
coupled to the power supply switch and configured to receive the
controlled supply voltage, gates of the p-channel transistors are
coupled to a drain of a first transistor of the initialization
circuitry, and drains of the p-channel transistors are coupled to
drains of the n-channel transistors, and wherein gates of the
n-channel transistors are configured to receive the input voltages
from the output circuitry and respectively coupled to drains of
second and third transistors of the initialization circuitry.
18. The memory system of claim 17, wherein the output circuitry
comprises: a plurality of p-channel transistors having gates
coupled to the drain of one of the p-channel transistors of the
operational amplifier and receive the gate control voltage, and
wherein the gates of the p-channel transistors of the output
circuitry are coupled to a drain of a fourth transistor of the
initialization circuitry; and a plurality of bipolar junction
transistors (BJTs) having emitters respectively coupled to drains
of the p-channel transistors of the output circuitry, and bases and
collectors of the plurality of BJTs are coupled to the ground,
wherein the bandgap reference voltage is output at a connection
node between a drain of one of the p-channel transistors of the
output circuitry and an emitter of one of a corresponding BJT of
the BJTs of the output circuitry.
19. The memory system of claim 14, wherein the power supply switch
comprises: a transistor having a gate for receiving the enabling
signal, and an inverter coupled to the gate of the transistor and
configured to receive a control signal and convert the control
signal into the enabling signal, wherein the bandgap reference
circuit is configured such that the bandgap reference voltage
increases from the ground to a bandgap target voltage during a
startup of the bandgap reference circuit, and wherein the memory
controller is configured to: when the startup is in a power-on
stage, generate a power-on-reset (POR) signal based on the original
supply voltage, generate the control signal based on the POR
signal, and provide the control signal to the inverter, and when
the startup is in a normal operation range, generate a wakeup
signal as the control signal and provide the output signal to the
inverter.
20. An integrated circuit comprising: a power supply switch
configured to receive an enabling signal and an original supply
voltage and to controllably output a controlled supply voltage at a
power terminal with the controlled supply voltage at a first
voltage when the enabling signal is in a first state and to have
the power terminal grounded when the enabling signal is in a second
state; an operational amplifier including a pair of input
terminals, a voltage supply terminal coupled to the power terminal
to receive the controlled supply voltage, and an output terminal to
output a gate control voltage; output circuitry coupled to the
output terminal of the operational amplifier to receive the gate
control voltage and coupled to the power terminal to receive the
controlled supply voltage, the output circuitry configured to
generate and feedback a pair of input voltages to the pair of input
terminals of the operational amplifier, and to output a reference
voltage; and initialization circuitry coupled to the power supply
switch, the operational amplifier, and the output circuitry, and
configured to receive the enabling signal and to drive the
controlled supply voltage and the gate control voltage to ground
when the enabling signal is in the second state.
Description
BACKGROUND
Integrated circuit memory systems are becoming smaller and faster.
Reference voltage circuits are often used in these memory systems
to provide reference voltages. For example, a bandgap reference
circuit can provide a bandgap reference voltage to a non-volatile
memory system for performing an operation of programming, erasing,
verifying, or reading in a non-volatile memory. Therefore, it would
be desirable to develop the bandgap reference circuit that can
enable fast startups to obtain the bandgap reference voltage to
thereby improve the performance of the non-volatile memory
system.
SUMMARY
The present disclosure describes systems and techniques for
managing startups of bandgap reference circuits in memory systems,
e.g., non-volatile memory systems.
One aspect of the present disclosure features an integrated circuit
including: a power supply switch configured to receive an original
supply voltage and provide a controlled supply voltage controllable
by an enabling signal; an operational amplifier configured to
receive input voltages and the controlled supply voltage and output
a gate control voltage; output circuitry configured to receive the
gate control voltage from the operational amplifier and the
controlled supply voltage from the power supply switch, provide the
input voltages to the operational amplifier, and output a reference
voltage; and initialization circuitry coupled to the power supply
switch, the operational amplifier, and the output circuitry and
configured to initialize the controlled supply voltage and the gate
control voltage to a ground based on the enabling signal.
The output circuitry can be configured to stabilize the reference
voltage to be independent from temperature, process corner,
voltage, or a combination thereof.
In some implementations, the power supply switch includes a
transistor having a gate for receiving the enabling signal and
configured to generate the controlled supply voltage based on the
original supply voltage in response to the enabling signal. The
power supply switch can include an inverter coupled to the gate of
the transistor and configured to convert a control signal into the
enabling signal. During a startup in a power-on stage, the control
signal can be based on a power-on-reset (POR) signal associated
with the original supply voltage. During a startup in a normal
operational stage, the original supply voltage can remain at a
target supply voltage, and the control signal can include a step
signal.
The initialization circuitry can be configured such that the
reference voltage increases from the ground to a target voltage
during a startup of the integrated circuit. The initialization
circuitry can be configured to initialize the input voltages to be
grounded based on the enabling signal, together with the controlled
supply voltage and the gate control voltage.
In some implementations, the initialization circuitry includes a
plurality of transistors having gates for receiving the enabling
signal, sources coupled to a ground, and drains respectively
coupled to the operational amplifier, the power supply switch, and
the output circuitry.
In some examples, the operational amplifier includes p-channel
transistors and re-channel transistors. Sources of the p-channel
transistors are coupled to the power supply switch and configured
to receive the controlled supply voltage, gates of the p-channel
transistors are coupled to a drain of a first transistor of the
initialization circuitry, and drains of the p-channel transistors
are coupled to drains of the n-channel transistors, and gates of
the n-channel transistors are configured to receive the input
voltages from the output circuitry and respectively coupled to
drains of second and third transistors of the initialization
circuitry.
In some implementations, the output circuitry includes: a plurality
of p-channel transistors having gates coupled to the drain of one
of the p-channel transistors of the operational amplifier and
receive the gate control voltage, where the gates of the p-channel
transistors of the output circuitry are coupled to a drain of a
fourth transistor of the initialization circuitry; and a plurality
of bipolar junction transistors (BJTs) having emitters respectively
coupled to drains of the p-channel transistors of the output
circuitry, and bases and collectors of the plurality of BJTs are
coupled to the ground, where the reference voltage is output at a
connection node between a drain of one of the p-channel transistors
of the output circuitry and an emitter of one of a corresponding
BJT of the BJTs of the output circuitry. The integrated circuit can
further include a coupling capacitor having a first end coupled to
the power supply switch for receiving the controlled supply voltage
and a second end coupled to the drain of the fourth transistor of
the initialization circuitry and the gates of the p-channel
transistors of the output circuitry.
In some implementations, the integrated circuit further includes a
coupling capacitor having a first end coupled to the power supply
switch for receiving the controlled supply voltage and a second end
coupled to an output of the operational amplifier for outputting
the gate control voltage. The coupling capacitor can be configured
such that the gate control voltage varies substantially
proportionally and synchronously with the controlled supply voltage
during the startup.
Another aspect of the present disclosure features a memory system
including: a memory, a memory controller coupled to the memory, and
a bandgap reference circuit coupled to the memory controller and
configured to provide a bandgap reference voltage to the memory
controller for performing one or more actions on the memory. The
bandgap reference circuit includes: a power supply switch
configured to receive an original supply voltage and provide a
controlled supply voltage controllable by an enabling signal; an
operational amplifier configured to receive input voltages and the
controlled supply voltage and output a gate control voltage; output
circuitry configured to receive the gate control voltage from the
operational amplifier and the controlled supply voltage from the
power supply switch, provide the input voltages to the operational
amplifier, and output an output voltage as the bandgap reference
voltage; and initialization circuitry coupled to the power supply
switch, the operational amplifier, and the output circuitry and
configured to initialize the controlled supply voltage and the gate
control voltage to a ground based on the enabling signal.
In some implementations, the memory system further includes a
coupling capacitor having a first end coupled to the power supply
switch for receiving the controlled supply voltage and a second end
coupled to an output of the operational amplifier for outputting
the gate control voltage. The coupling capacitor can be configured
such that the gate control voltage varies substantially
proportional and synchronously with the controlled supply voltage
during a startup of the bandgap reference circuit.
In some implementations, the initialization circuitry includes a
plurality of transistors having gates for receiving the enabling
signal, sources coupled to a ground, and drains respectively
coupled to the operational amplifier, the power supply switch, and
the output circuitry.
In some implementations, the operational amplifier includes
p-channel transistors and n-channel transistors, where sources of
the p-channel transistors are coupled to the power supply switch
and configured to receive the controlled supply voltage, gates of
the p-channel transistors are coupled to a drain of a first
transistor of the initialization circuitry, and drains of the
p-channel transistors are coupled to drains of the n-channel
transistors, and where gates of the n-channel transistors are
configured to receive the input voltages from the output circuitry
and respectively coupled to drains of second and third transistors
of the initialization circuitry.
In some implementations, the output circuitry includes: a plurality
of p-channel transistors having gates coupled to the drain of one
of the p-channel transistors of the operational amplifier and
receive the gate control voltage, where the gates of the p-channel
transistors of the output circuitry are coupled to a drain of a
fourth transistor of the initialization circuitry. The output
circuitry can include a plurality of bipolar junction transistors
(BJTs) having emitters respectively coupled to drains of the
p-channel transistors of the output circuitry, and bases and
collectors of the plurality of BJTs are coupled to the ground,
where the bandgap reference voltage is output at a connection node
between a drain of one of the p-channel transistors of the output
circuitry and an emitter of one of a corresponding BJT of the BJTs
of the output circuitry.
In some implementations, the power supply switch includes: a
transistor having a gate for receiving the enabling signal, and an
inverter coupled to the gate of the transistor and configured to
receive a control signal and convert the control signal into the
enabling signal. The bandgap reference circuit can be configured
such that the bandgap reference voltage increases from the ground
to a bandgap target voltage during a startup of the bandgap
reference circuit. The memory controller can be configured to: when
the startup is in a power-on stage, generate a power-on-reset (POR)
signal based on the original supply voltage, generate the control
signal based on the POR signal, and provide the control signal to
the inverter, and when the startup is in a normal operation range,
generate a wakeup signal as the control signal and provide the
output signal to the inverter.
A further aspect of the present disclosure features an integrated
circuit including: a power supply switch configured to receive an
enabling signal and an original supply voltage and to controllably
output a controlled supply voltage at a power terminal with the
controlled supply voltage at a first voltage when the enabling
signal is in a first state and to have the power terminal grounded
when the enabling signal is in a second state; an operational
amplifier including a pair of input terminals, a voltage supply
terminal coupled to the power terminal to receive the controlled
supply voltage, and an output terminal to output a gate control
voltage; output circuitry coupled to the output terminal of the
operational amplifier to receive the gate control voltage and
coupled to the power terminal to receive the controlled supply
voltage, the output circuitry configured to generate and feedback a
pair of input voltages to the pair of input terminals of the
operational amplifier, and to output a reference voltage; and
initialization circuitry coupled to the power supply switch, the
operational amplifier, and the output circuitry, and configured to
receive the enabling signal and to drive the controlled supply
voltage and the gate control voltage to ground when the enabling
signal is in the second state.
Another further aspect of the present disclosure features a method
of managing startups of a reference voltage circuit, including:
initializing the reference voltage circuit by an enabling signal
being at a first level before a first time point. The reference
voltage circuit includes: a power supply switch configured to
receive an original supply voltage and output a controlled supply
voltage based on the enabling signal, an operational amplifier
configured to receive input voltages and the controlled supply
voltage and output a gate control voltage, and output circuitry
configured to receive the gate control voltage and the controlled
supply voltage, provide the input voltages to the operational
amplifier, and output a reference voltage. The reference voltage
circuit is initialized such that the controlled supply voltage, the
gate control voltage, and the reference voltage are grounded before
the first time point.
The method further includes: capacitively coupling the controlled
supply voltage to the gate control voltage when the enabling signal
becomes to be at a second level after the first time point, such
that the gate control voltage increases from a grounded voltage to
be substantially proportional to the controlled supply voltage and
outputting the reference voltage based on the gate control voltage,
the reference voltage increasing from the grounded voltage at the
first time point and reaching a target voltage at a second time
point later than the first time point.
The method can further include generating the enabling signal based
on a control signal. The method can further include: generating a
power-on-reset (POR) signal based on the original supply voltage,
and generating a control signal based on the POR signal. The
control signal can be a wake up signal including a step signal.
The method can further include: stabilizing, by the output
circuitry, the reference voltage to be independent from
temperature, process corner, voltage, or a combination thereof.
Implementations of the above techniques include methods, systems,
circuits, computer program products and computer-readable media. In
one example, a method can be performed in a non-volatile memory and
the method can include the above-described actions, e.g., the
actions for managing startups of reference voltage circuits. In
another example, one such computer program product is suitably
embodied in a non-transitory machine-readable medium that stores
instructions executable by one or more processors. The instructions
are configured to cause the one or more processors to perform the
above-described actions. One such computer-readable medium stores
instructions that, when executed by one or more processors, are
configured to cause the one or more processors to perform the
above-described actions.
The techniques can be implemented for any type of circuits or
devices that need fast startup (or setup). The techniques can speed
up the startup to a steady state and avoid overshoot phenomenon
during the startup. The techniques also enable other circuits or
devices, e.g., charge pumps or comparator circuits, using reference
voltages provided by reference voltage circuits with fast startups
to start earlier, without component breakdown due to reference
voltage overshoot. For example, in a non-volatile memory system, a
bandgap reference circuit can provide a bandgap reference voltage
to a memory controller for performing an operation of programming,
erasing, verifying, or reading in a non-volatile memory. In some
cases, for a startup during a power-on stage, the bandgap reference
voltage changes from a higher supply voltage to a lower bandgap
target voltage, which may cause a long startup time. Additionally,
for a startup during a normal operation stage, the bandgap
reference circuit needs to be activated by a startup pulse, which
may cause overshoots on other components in the memory devices and
need a long time to recover to the bandgap target voltage as
well.
Implementations of the techniques can achieve a bandgap reference
circuit with fast startups, for example, by adding a power
metal-oxide-silicon (MOS) transistor, a coupling capacitor, and an
initialization circuitry to change startups during power on reset
(POR) and normal operation. The coupling capacitor can make a gate
control voltage vary proportionally and synchronously with a
controlled supply voltage. The power MOS transistor can initially
pull the gate control voltage down to 0 V, such that the bandgap
reference voltage associated with the gate voltage is charged up
from 0 V, instead of discharging from a supply voltage VDD, to a
bandgap target voltage, which can greatly speed up the startup time
(e.g., over one order of magnitude) and avoid overshoots to other
components in the circuits or devices. Moreover, in normal
operation, the power MOS allows the gate control voltage to be
discharged to the ground by the initialization circuitry before a
startup, thus the bandgap reference circuit does not need a startup
pulse. Thus, the bandgap reference circuit can achieve fast startup
without short pulse and overshoots, thereby improving the
performance of the memory. Meanwhile, the bandgap reference circuit
can provide a stable bandgap reference voltage that can be
independent from temperatures, process corners, and/or voltages, or
PVT (process-voltage-temperature) effect, that is, the bandgap
reference voltage can be kept substantially constant under
different process corners, different temperatures, and/or different
voltages.
The techniques can be implemented with any types of memory
transistors, any types of metal-oxide-silicon (MOS) transistors,
e.g., n-channel transistors (NMOS) and/or p-channel transistors
(PMOS), any types of bipolar junction transistors (BJTs), and any
types of operational amplifiers (OPAs) such as folded-cascade OPAs
or two-stage OPAs. The techniques can be implemented with any types
of capacitors, such as metal-insulator-metal capacitors (MIMCAPs),
metal-oxide-silicon capacitors (MOSCAPs), or
metal-oxide-semiconductor field-effect transistor capacitors
(MOSFET CAPs).
The techniques can be applied to various memory types, such as SLC
(single-level cell) devices, or MLC (multi-level cell) devices like
2-level cell devices or TLC (triple-level cell) devices. The
techniques can be applied to various types of non-volatile memory
devices, such as NOR flash memory, NAND flash memory, resistive
random-access memory (RRAM), phase-change random-access memory
(PCRAM), among others. Additionally or alternatively, the
techniques can be applied to various types of devices and systems,
such as secure digital (SD) cards, embedded multimedia cards
(eMMC), or solid-state drives (SSDs), embedded systems, among
others.
The details of one or more disclosed implementations are set forth
in the accompanying drawings and the description below. Other
features, aspects, and advantages will become apparent from the
description, the drawings and the claims.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 illustrates an example of a system including a memory
system, according to one or more implementations.
FIG. 2 shows an example circuit diagram illustrating a bandgap
reference circuit.
FIG. 3A shows a schematic diagram showing variations of different
voltages or signals in the bandgap reference circuit of FIG. 2 with
time at a startup during a power-on stage.
FIG. 3B shows a schematic diagram showing variations of different
voltages or signals in the bandgap reference circuit of FIG. 2 with
time at a startup during a normal operation stage.
FIG. 4 shows an example circuit diagram of a bandgap reference
circuit, according to one or more implementations.
FIG. 5A shows a schematic diagram showing variations of different
voltages or signals in the bandgap reference circuit of FIG. 4 with
time at a startup during a power-on stage, according to one or more
implementations.
FIG. 5B shows a schematic diagram showing variations of different
voltages or signals in the bandgap reference circuit of FIG. 4 with
time at a startup during a normal operation stage, according to one
or more implementations.
FIG. 6 illustrates a flow chart of an example of a process for
managing startups of a reference voltage circuit, according to one
or more implementations.
DETAILED DESCRIPTION
FIG. 1 illustrates an example of a system 100. The system 100
includes a device 110 and a host device 120. The device 110 can be
a memory system including a device controller 112 and a memory 116.
The device controller 112 includes a processor 113 and an internal
memory 114.
In some implementations, the device 110 is a storage device. For
example, the device 110 can be an embedded multimedia card (eMMC),
a secure digital (SD) card, a solid-state drive (SSD), or some
other suitable storage. In some implementations, the device 110 is
a smart watch, a digital camera or a media player. In some
implementations, the device 110 is a client device that is coupled
to a host device 120. For example, the device 110 is an SD card in
a digital camera or a media player that is the host device 120.
The device controller 112 is a general-purpose microprocessor, or
an application-specific microcontroller. In some implementations,
the device controller 112 is a memory controller for the device
110. The following sections describe the various techniques based
on implementations in which the device controller 112 is a memory
controller. However, the techniques described in the following
sections are also applicable in implementations in which the device
controller 112 is another type of controller that is different from
a memory controller.
The processor 113 is configured to execute instructions and process
data. The instructions include firmware instructions and/or other
program instructions that are stored as firmware code and/or other
program code, respectively, in the secondary memory. The data
includes program data corresponding to the firmware and/or other
programs executed by the processor, among other suitable data. In
some implementations, the processor 113 is a general-purpose
microprocessor, or an application-specific microcontroller. The
processor 113 is also referred to as a central processing unit
(CPU).
The processor 113 accesses instructions and data from the internal
memory 114. In some implementations, the internal memory 114 is a
Static Random Access Memory (SRAM) or a Dynamic Random Access
Memory (DRAM). For example, in some implementations, when the
device 110 is an eMMC, an SD card or a smart watch, the internal
memory 114 is an SRAM. In some implementations, when the device 110
is a digital camera or a media player, the internal memory 114 is
DRAM.
In some implementations, the internal memory is a cache memory that
is included in the device controller 112, as shown in FIG. 1. The
internal memory 114 stores instruction codes, which correspond to
the instructions executed by the processor 113, and/or the data
that are requested by the processor 113 during runtime.
The device controller 112 transfers the instruction code and/or the
data from the memory 116 to the internal memory 114. In some
implementations, the memory 116 is a non-volatile memory that is
configured for long-term storage of instructions and/or data, e.g.,
an NAND or NOR flash memory device, or some other suitable
non-volatile memory device. In implementations where the memory 116
is an NAND or NOR flash memory, the device 110 is a flash memory
device, e.g., a flash memory card, and the device controller 112 is
an NAND or NOR flash controller. For example, in some
implementations, when the device 110 is an eMMC or an SD card, the
memory 116 is an NAND or NOR flash; in some implementations, when
the device 110 is a digital camera, the memory 116 is an SD card;
and in some implementations, when the device 110 is a media player,
the memory 116 is a hard disk.
The device 110 includes a reference voltage circuit 118. The
reference voltage circuit 118 is configured to generate a reference
voltage provided to the device controller 112. The device
controller 112 can receive the reference voltage and perform one or
more actions in the memory 116. The reference voltage can be
independent from temperature, process corner, voltage, or an
overall PVT effect.
The reference voltage circuit 118 can be a bandgap reference
circuit configured to generate a bandgap reference (BGREF) voltage.
As illustrated in FIG. 1, the bandgap reference circuit can provide
the bandgap reference voltage to the device controller 112. The
device controller 112 can receive the bandgap reference voltage and
use the BGREF voltage to produce a level of a control signal in a
word line or a bit line for performing an operation of programming,
erasing, verifying, or reading for the memory 116. For example, the
device controller 112 can read data in the memory 116 by the
bandgap reference voltage for obtaining a reading result. In some
examples, the bandgap reference circuit can provide the bandgap
reference voltage to a bit line clamping circuit that can be
included in the device controller 112. The bit line clamping
circuit is configured to generate a stable bit line clamping
voltage based on the bandgap reference voltage. The bit line
clamping voltage can be independent from PVT effect. The bit line
clamping voltage can be provided to a bit line of a memory cell in
the memory 116 for reading data from the memory cell.
In some examples, the bandgap reference voltage is used to generate
one or more operational voltages for one or more other components,
circuits, and/or devices in the device 110. For example, the
operational voltages can be multiple times (e.g., 2 times, 5 times,
10 times, or more) higher than the bandgap reference voltage. If
the bandgap reference voltage is too high, the operational voltages
can exceed damage threshold voltages of the one or more other
components, circuits, and/or devices, which can cause overshoots or
damages. For example, the bandgap reference voltage reaches a
bandgap target voltage of 1 V after a startup completes. A device
has an operational voltage that is 10 times of the bandgap
reference voltage and a damage threshold voltage of about 15 V. If
the bandgap reference voltage varies from 3 V to 1 V during the
startup, the operational voltage of the device accordingly varies
from 30 V to 10 V during the startup. Thus, the operational voltage
can exceed the damage threshold voltage of the device during the
startup and cause overshoot or damage on the device. Therefore, it
is desirable for the bandgap reference circuit configured to
generate the bandgap reference voltage varying within a reasonable
range that will not cause overshoots.
When the bandgap reference circuit is turned on, the bandgap
reference circuit may receive a power-on reset (POR) signal and
enter a power-on stage to perform a start up operation. It may take
a setup time for the bandgap reference voltage to reach a bandgap
target voltage. After the power-on stage completes, the bandgap
reference circuit can enter into a normal operation stage. During
the normal operation range, the bandgap reference circuit can be
idle and turned off, for example, when the device controller 112
does not need the bandgap target voltage for performing an action
on the memory 116, and the bandgap reference voltage can be
grounded or 0 V. When the bandgap target voltage is needed, the
bandgap reference circuit can be woken up or started up again. For
the startup during the normal operation range, it also takes a
setup time for the bandgap reference voltage to reach the bandgap
target voltage. Thus, it is desirable for the bandgap reference
circuit to have fast startup (i.e., a short setup time) during both
the power-on stage and the normal operation stage, which can
accordingly improve the performance of the device 110 and/or the
system 100.
FIG. 2 shows an example circuit diagram illustrating a bandgap
reference circuit 200 configured to provide a bandgap reference
(BGREF) voltage. The bandgap reference circuit 200 can be used as
the reference voltage circuit 118 of FIG. 1. The bandgap reference
circuit 200 includes a capacitor 202, a startup signal circuit 210,
initialization circuitry having a transistor 204 and a transistor
206, an operational amplifier (OPA) 220, and output circuitry 230.
FIG. 3A shows a schematic diagram showing variations of different
voltages or signals in the bandgap reference circuit 200 with time
at a startup during a power-on stage. FIG. 3B shows a schematic
diagram showing variations of the different voltages or signals in
the bandgap reference circuit 200 with time at a startup during a
normal operation stage.
The startup signal circuit 210 includes an OR gate 212 and a
transistor 214, e.g., an NMOS transistor. The OR gate 212 is
configured to receive a power-on rest (POR) signal and a pulse
signal and output a startup signal. The transistor 214 includes a
gate for receiving the startup signal, a source coupled to a
ground, and a drain coupled to the OPA 220 and the output circuitry
230. During the power-on stage, as illustrated in FIG. 3A, the
pulse signal keeps low and the POR signal is output by the OR gate
212 as the startup signal. During the normal operation stage, as
illustrated in FIG. 3B, the POR signal keeps low and the pulse
signal is output by the OR gate 212 as the startup signal.
The bandgap reference circuit 200 is configured to receive a supply
voltage VDD. During the power-on stage, as illustrated in FIG. 3A,
the supply voltage increases from 0 V to VDD and then stabilizes at
VDD. During the normal operation stage, as illustrated in FIG. 3B,
the supply voltage maintains at VDD. The capacitor 202 has one end
coupled to the supply voltage and the other end coupled to the
drain of the transistor 214.
Each of the transistors 204 and 206 in the initialization circuitry
can be a p-channel transistor, e.g., PMOS, and can be configured to
receive a bandgap enabling (BGEN) signal at a gate and the supply
voltage VDD at a source. A drain of the transistor 204 is coupled
to the OPA 220, and a drain of the transistor 206 is coupled to the
output circuitry 330.
The OPA 220 includes two p-channel transistors 222 and 224, e.g.,
PMOS transistors, two n-channel transistors 226 and 228, e.g., NMOS
transistors, and a current transistor 229. The p-channel
transistors 222 and 224 have their gates coupled together to the
drain of the transistor 204 and their sources coupled together to
receive the supply voltage VDD. A drain of the p-channel transistor
222 is coupled to the drain of the transistor 204 and to a drain of
the n-channel transistor 226. A drain of the p-channel transistor
224 is coupled to the drain of the transistor 214 and to a drain of
the n-channel transistor 228. Sources of the two n-channel
transistors 226 and 228 are coupled together to the current
transistor 229 configured for biasing current and coupled to the
ground. Gates of the two n-channel transistors 226 and 228 are two
inputs of the OPA 220 and configured to receive respective input
voltages VA and VB from the output circuitry 230.
The output circuitry 230 includes three p-channel transistors 232,
234, 236, e.g., PMOS transistors, and three bipolar junction
transistors (BJTs) 238, 240, 242, e.g., PNP BJTs. Sources of the
p-channel transistors 232, 234, 236 are connected together to
receive the supply voltage VDD. Gates of the p-channel transistors
232, 234, 236 are connected together to the drain of the transistor
214, the other end of the capacitor 202, the drain of the
transistor 224 in the OPA 220, and the drain of the transistor 206
in the initialization circuitry. Thus, a gate control voltage Vo at
the gates of the p-channel transistors 232, 234, 236 are associated
with the supply voltage VDD, the OPA 220, the BGEN signal, and the
startup signal circuit 210. The gate control voltage Vo can be
considered as an output of the OPA 220.
A drain of the p-channel transistor 232 is configured to provide an
input voltage VA to the gate of the n-channel transistor 228 of the
OPA 220, and a drain of the p-channel transistor 234 is configured
to provide the input voltage VB to the gate of the n-channel
transistor 226 of the OPA 220. An emitter of the BJT 238 is
connected to the drain of the p-channel transistor 232, and a base
and a collector of the BJT 238 are both coupled to the ground. An
emitter of the BJT 240 is connected to the drain of the p-channel
transistor 234 through a resistor 244, and a base and a collector
of the BJT 240 are both coupled to the ground. An emitter of the
BJT 242 is connected to the drain of the p-channel transistor 236
through a resistor 246, and a base and a collector of the BJT 242
are both coupled to the ground. The bandgap reference circuit 200
is configured to output the bandgap reference (BGREF) voltage at a
connection point between the drain of the p-channel transistor 236
and the resistor 246.
Referring to FIG. 3A, for the startup at the power-on stage, the
supply voltage increases from 0 V and reaches VDD at time point ti.
The POR signal is generated based on the supply voltage and
increases from 0 V to a higher voltage (e.g., VDD) at ti and
decreases to a lower voltage (e.g., 0 V) at time point tp0. As the
pulse keeps low (e.g., at 0 V), the startup signal is the same as
the POR signal. The bandgap enabling (BGEN) signal varies same with
the supply voltage. The gate control voltage Vo initially has a
voltage higher than 0 V, e.g., VDD, then is pulled down to 0 V at
ti and pulled up at tp0 to a higher voltage when VA is equal to VB.
Note that the bandgap reference circuit 200 needs to pull Vo first
to a lower voltage level to avoid the startup fail. For example,
the p-channel transistors 232, 234, 236 can be turned off if Vo is
not pulled low and keeps high. The bandgap reference (BGREF)
voltage is increased from 0 V to VDD at ti, keeps high between ti
and tp0, and is gradually decreased to a bandgap target voltage at
tp1. A time period between the tp0 and tp1 is the setup time Tsetup
of the bandgap reference circuit 200. In some examples, at the end
of power-on stage, VDD is about 3 V, Vo is about 2 V, and the
bandgap target voltage is about 1 V. The setup time Tsetup is in
the microsecond (.mu.s) range, e.g., 1 .mu.s to 10 .mu.s.
Referring to FIG. 3B, for the normal operation stage, the supply
voltage remains at VDD. The POR signal is kept low (e.g., at 0 V),
the pulse signal includes a pulse having a higher voltage (e.g.,
VDD) during a pulse width (from tn0 to tnp), and thus the startup
signal is the same as the pulse signal. The bandgap enabling (BGEN)
signal increases from 0 V to VDD at tn0 when the bandgap reference
circuit 200 is turned on. The gate control voltage Vo is pulled
down by the pulse signal from a higher voltage (e.g., VDD) to 0 V
during the time period tn0 to tnp, and pulled up from tnp to a
higher voltage. The bandgap reference voltage increases from 0 V to
a higher voltage (e.g., VDD) and then gradually decreases to the
bandgap target voltage at tn1. A time period between the tn0 and
tn1 is the setup time Tsetup of the bandgap reference circuit 200.
The setup time Tsetup depends on the pulse width of the pulse
signal and an operation current. When the operation current is
higher and the pulse width is shorter, the setup time can be
shorter. However, a shorter pulse width of the pulse signal cannot
pull the gate control voltage Vo to 0 V, and a higher operation
current can cause a larger power consumption. The setup time Tsetup
is normally in the microsecond (.mu.s) range.
Although the bandgap reference circuit 200 can provide the bandgap
target voltage, the setup time for startups during the power-on
stage and the normal operation range is long (e.g., in the .mu.s
range), where the bandgap reference voltage needs to decrease from
a higher voltage (e.g., VDD) to the lower bandgap target voltage.
Moreover, the higher voltage value of the bandgap reference voltage
can cause overshoots in other circuits or devices having operation
voltages that are multiple times of the bandgap target voltage but
having damage threshold voltages that are lower than multiple times
of the supply voltage VDD. Furthermore, the requirement of a
startup pulse during the normal operation range increases the
complexity of the bandgap reference circuit.
Implementations of the present disclosure provide a bandgap
reference circuit with fast startup, for example, by adding a power
metal-oxide-silicon (MOS) transistor, a coupling capacitor, and an
initialization circuitry to change startups during power on reset
(POR) and normal operation. The coupling capacitor can make a gate
control voltage vary proportionally and synchronously with a
controlled supply voltage. The power MOS transistor can initially
pull the gate control voltage low to 0 V such that the bandgap
reference voltage associated with the gate control voltage is
charged up from 0 V, instead of discharging from a supply voltage
VDD, to a bandgap target voltage, which can greatly speed up the
startup time (e.g., over one order of magnitude) and avoid
overshoots to other components in the circuits or devices.
Moreover, in normal operation, the power MOS allows the gate
control voltage to be discharged to the ground by the
initialization circuitry before a startup, thus the bandgap
reference circuit does not need a startup pulse. Thus, the bandgap
reference circuit can achieve fast startup without short pulse and
overshoots.
FIG. 4 shows an example circuit diagram of a bandgap reference
circuit 400, according to one or more implementations. The bandgap
reference circuit 400 can provide the reference voltage circuit 118
of FIG. 1. The bandgap reference circuit 400 can provide a stable
bandgap reference voltage to a memory controller, e.g., the device
controller 112 of FIG. 1, for performing operations on a memory,
e.g., the memory 116 of FIG. 1. In contrast to the bandgap
reference circuit 200 of FIG. 2, the bandgap reference circuit 400
can achieve faster startups during a power-on stage and a normal
operation stage, without startup pulses and overshoots. FIG. 5A
shows a schematic diagram showing variations of different voltages
or signals in the bandgap reference circuit 400 of FIG. 4 with time
at the startup during the power-on stage, according to one or more
implementations. FIG. 5B shows a schematic diagram showing
variations of the different voltages or signals in the bandgap
reference circuit of FIG. 4 with time at the startup during the
normal operation stage, according to one or more
implementations.
Compared to the bandgap reference circuit 200 that is configured to
directly receive a supply voltage VDD, the bandgap reference
circuit 400 includes a power supply switch 410 configured to
receive the supply voltage VDD and generate a controlled supply
voltage Vpwr based on the supply voltage. In some implementations,
the power supply switch 410 includes an inverter 412 and a power
transistor 414, e.g., a PMOS transistor. The inverter 412 is
configured to convert a bandgap enabling (BGEN) signal (e.g., a
control signal) to an enabling (ENB) signal. The power transistor
414 is configured to receive the supply voltage VDD at a source and
the ENB signal at a gate and output the controlled supply voltage
Vpwr at a drain. When the ENB signal is at a high voltage level,
the power transistor 414 is turned off and blocks the supply
voltage VDD to the other components in the bandgap reference
circuit 200; when the ENB signal is at a low voltage level, the
power transistor 414 is turned on and provides the controlled
supply voltage Vpwr.
The bandgap reference circuit 400 can include an operational
amplifier (OPA) 420 and output circuitry 430 The output circuitry
430 is a bandgap core circuit that combines a positive temperature
coefficient circuit and a negative temperature coefficient circuit.
The OPA 420 can be any suitable type of OPA, such as a
folded-cascade OPA or a two-stage OPA. The OPA 420 and the output
circuitry 430 are coupled with each other, where the OPA 420 is
configured to provide a gate control voltage Vo to the output
circuitry 430, and the output circuitry 430 is configured to
provide input voltages VA and VB into respective inputs of the OPA
420.
In some implementations, the OPA 420 includes two p-channel
transistors 422 and 424, e.g., PMOS transistors, two n-channel
transistors 426 and 428, e.g., NMOS transistors, and a current
transistor 429. The p-channel transistors 422 and 424 have their
gates coupled together to a drain of the p-channel transistor 422
and their sources coupled together to receive the controlled supply
voltage Vpwr. The drain of the p-channel transistor 422 is coupled
to a drain of the n-channel transistor 426. A drain of the
p-channel transistor 424 is coupled to a drain of the n-channel
transistor 428. Sources of the two n-channel transistors 426 and
428 are coupled together to the current transistor 429 configured
for biasing current and coupled to the ground. Gates of the two
n-channel transistors 426 and 428 are two inputs of the OPA 420 and
configured to receive the respective input voltages VA and VB from
the output circuitry 430.
In some implementations, the output circuitry 430 includes three
p-channel transistors 432, 434, 436, e.g., PMOS transistors, and
three bipolar junction transistors (BJTs) 438, 440, 442, e.g., PNP
BJTs. Sources of the p-channel transistors 432, 434, 436 are
connected together to receive the controlled supply voltage Vpwr.
Gates of the p-channel transistors 432, 434, 436 are connected
together to the drain of the p-channel transistor 424 in the OPA
420. Thus, the gate control voltage Vo can be considered as an
output of the OPA 420. A drain of the p-channel transistor 432 is
configured to provide an input voltage VA to the gate of the
n-channel transistor 428 of the OPA 420, and a drain of the
p-channel transistor 434 is configured to provide the input voltage
VB to the gate of the n-channel transistor 426 of the OPA 420. An
emitter of the BJT 438 is connected to the drain of the p-channel
transistor 432, and a base and a collector of the BJT 438 are both
coupled to the ground. An emitter of the BJT 440 is connected to
the drain of the p-channel transistor 434 through a resistor 444,
and a base and a collector of the BJT 440 are both coupled to the
ground. An emitter of the BJT 442 is connected to the drain of the
p-channel transistor 436 through a resistor 446, and a base and a
collector of the BJT 442 are both coupled to the ground. The
bandgap reference circuit 400 is configured to output the bandgap
reference (BGREF) voltage at a connection point between the drain
of the p-channel transistor 436 and the resistor 446.
The output circuitry 430 is configured to stabilize the bandgap
reference voltage such that the bandgap reference voltage can be
substantially independent from temperature, process corner, and/or
voltage. In a particular example, the output circuitry 430 is
configured such that the bandgap reference voltage is independent
from PVT effect. In some implementations, the p-channel transistors
432, 434, the BJTs 438, 440, and the resistor 444 form a
proportional to absolute temperature (PTAT) circuit configured
together to be positively affected by temperature (e.g., to have a
current associated with a positive temperature coefficient). The
BJT 442 forms a complementary to absolute temperature (CTAT)
circuit and is configured to be negatively affected by temperature
(e.g., to have a current associated with a negative temperature
coefficient). The BJT 442 is for CTAT voltage generation. The
p-channel transistor 436, the BJT 442, and the resistor 446 are
configured for zero to absolute temperature (ZTAT) voltage
generation and configured together not to be affected by
temperature. In such a way, the output circuitry 430 can be
configured to stabilize the bandgap reference voltage independent
from temperature (e.g., to have a current with zero temperature
coefficient). The transistors in the output circuitry 430 can be
fabricated during a same process such that the effect of process
corner can be suppressed or eliminated.
The bandgap reference circuit 400 can further include a coupling
capacitor 402 (or a compensation capacitor) having a first end
coupled to the drain of the power transistor 414 for receiving the
controlled supply voltage Vpwr and a second end coupled to the
gates of the p-channel transistors 432, 434, 436 of the output
circuitry 430 for providing the gate control voltage Vo. The
coupling capacitor is configured to associate the gate control
voltage Vo with the controlled supply voltage Vpwr. By configuring
the coupling capacitor 402, the gate control voltage Vo can be
substantially proportional to the controlled supply voltage Vpwr.
Thus, when the controlled supply voltage Vpwr is 0 V, the gate
control voltage is also 0 V. When the controlled supply voltage
Vpwr ramps up, the gate control voltage Vo can be quickly coupled
high by the coupling capacitor 402.
In some examples, the coupling capacitor 402 is a transistor, e.g.,
an MOS transistor, having its source and drain coupled together as
the first end coupled to the power transistor 414 in the power
supply switch 410 and its gate as the second end coupled to the
gates of the p-channel transistors in the output circuitry 430. In
some examples, the coupling capacitor 402 is a
metal-insulator-metal capacitor (MIMCAP), a metal-oxide-silicon
capacitor (MOSCAP), or a metal-oxide-semiconductor field-effect
transistor capacitor (MOSFET CAP).
The bandgap reference circuit 400 can further include an
initialization circuitry having multiple transistors 404, 406, 408,
431, 433, e.g., n-channel transistors such as NMOS transistors,
coupled to different components in the bandgap reference circuit
400. The initialization circuitry can be configured to initialize
the components to the ground, such that the circuit 400 has no
leakage current when the circuit 400 is not in use. Sources of the
transistors can be coupled to the ground, gates of the transistors
can be coupled to the gate of the power transistor 414 in the power
supply switch 410 and configured to receive the ENB signal, and
drains of the transistors can be coupled to the components. In such
a way, the initialization circuitry enables to initialize the
components to the ground when the ENB signal is high.
The drain of the transistor 404 is coupled to the second end of the
coupling capacitor 402, the drain of the p-channel transistor 424
in the OPA 420, and the gates of the p-channel transistors 432,
434, 436 in the output circuitry 430. When the ENB signal is high,
the transistor 404 is turned on to initialize the gate control
voltage Vo to 0 V. The drain of the transistor 406 is coupled to
the drain of the power transistor 414, and the transistor 406 can
be configured to turn off the bandgap reference circuit 400 by
pulling the controlled voltage Vpwr down to 0 V with the ENB signal
being high. The drain of the transistor 408 is coupled to the drain
of the p-channel transistor 422 and the gates of the p-channel
transistors 422 and 424. The drain of the transistor 431 is coupled
to the gate of the n-channel transistor 428 in the OPA 420 and the
drain of the p-channel transistor 432 in the output circuitry 430,
and the transistor 431 can be enabled to initialize the input
voltage VA to be 0 V when the ENB signal is high. The drain of the
transistor 433 is coupled to the gate of the n-channel transistor
426 in the OPA 420 and the drain of the p-channel transistor 434 in
the output circuitry 430, and the transistor 433 can be enabled to
initialize the input voltage VB to be 0 V when the ENB signal is
high.
Referring to FIG. 5A, for the startup at the power-on stage, the
supply voltage increases from 0 V and reaches VDD at time point ti.
A POR signal is generated based on the supply voltage and increases
from 0 V to a higher voltage (e.g., VDD) at ti and decreases to a
lower voltage (e.g., 0 V) at time point tp0. The bandgap enabling
(BGEN) signal is generated based on the POR signal. When the POR
signal falls on an edge at tp0, the BGEN signal rises from 0 V to a
higher voltage (e.g., VDD). Note that the bandgap reference circuit
400 does not receive the POR signal, but the BGEN signal. The ENB
signal is generated by the inverter 412 based on the BGEN signal,
and keeps high before tp0. Thus, before tp0, the initialization
circuitry can enable the controlled supply voltage Vpwr, the gate
control voltage Vo, and the bandgap reference (BGREF) voltage to be
0 V. That is, the bandgap reference circuit 400 can be turned off
before tp0, which can avoid overshoots on other components,
circuit, or devices. After tp0, the ENB signal goes low, and the
controlled supply voltage Vpwr starts to increase, and the gate
control voltage Vo correspondingly increases from 0 V to a higher
voltage. The bandgap reference (BGREF) voltage also increases from
0 V and reaches a bandgap target voltage at tp1. A time period
between tp0 and tp1 is the setup time Tsetup of the bandgap
reference circuit 400. In some examples, at the end of power-on
stage, VDD is about 3 V, Vo is about 2 V, and the bandgap target
voltage is about 1 V. The setup time Tsetup can be about tens or
hundreds of nanoseconds (ns), e.g., 100 ns to 200 ns, which can be
more than one order of magnitude shorter than the setup time of the
bandgap reference circuit 200.
Compared to the bandgap reference circuit 200 where the bandgap
reference voltage has a high voltage VDD during the time period
from ti to tp0, the bandgap reference voltage generated by the
bandgap reference circuit 400 is initialized to 0 V before tp0.
Moreover, the initialization circuitry of the circuit 200 cannot
initialize the gate control voltage Vo to 0 V, because the supply
voltage VDD is directly provided to the circuit 200, and the
circuit 200 will be kept on and consume power if the gate control
voltage Vo is 0 V. However, the bandgap reference circuit 400 can
initialize the gate control voltage Vo to 0 V by the ENB signal,
because the circuit 400 receives the controlled supply voltage Vpwr
that can be initialized to 0 V by the same ENB signal and thus the
circuit 400 is turned off. The bandgap reference voltage generated
by the bandgap reference circuit 400 can increase from 0 V to the
bandgap target voltage, compared to the bandgap reference voltage
generated by the circuit 200 that decreases from a higher voltage
such as the supply voltage VDD to the bandgap target voltage. Thus,
the circuit 400 can have faster startup than the circuit 200 and
can better avoid overshoots than the circuit 200.
Referring to FIG. 5B, during the normal operation stage, the supply
voltage remains at VDD. The bandgap reference circuit 400 can be
started up (or woken up) by receiving a bandgap enabling (BGEN)
signal, e.g., a wake up signal such as a step signal, that
increases from 0 V to a higher voltage (e.g., VDD) at tn0. Similar
to the power-on stage illustrated in FIG. 5A, the ENB signal is
generated by the inverter 412 based on the BGEN signal, and keeps
high before tn0. Thus, before tn0, the initialization circuitry can
enable the controlled supply voltage Vpwr, the gate control voltage
Vo, and the bandgap reference (BGREF) voltage to be 0 V. That is,
the bandgap reference circuit 400 can be turned off before tn0,
which can avoid overshoots on other components, circuit, or
devices. As the gate control voltage Vo is kept to be 0 V, there is
no need for a pulse signal illustrated in FIG. 3B. After tn0, the
ENB signal goes low, and the controlled supply voltage Vpwr starts
to increase, and the gate control voltage Vo correspondingly
increases from 0 V to a higher voltage. The bandgap reference
(BGREF) voltage also increases from 0 V and reaches a bandgap
target voltage at tn1. A time period between tn0 and tn1 is the
setup time Tsetup of the bandgap reference circuit 400. The setup
time Tsetup can be about one or few hundred nanosecond (ns), which
can be more than one order of magnitude shorter than the setup time
of the bandgap reference circuit 200.
FIG. 6 illustrates a flow chart of an example of a process 600 for
managing startups of a reference voltage circuit in a memory
system, according to one or more implementations. The memory system
can be the device 110 of FIG. 1. The reference voltage circuit can
be the reference voltage circuit 118 of FIG. 1, or the bandgap
reference circuit 400 of FIG. 4. For example, the reference voltage
circuit can be a bandgap reference circuit configured to provide a
stable bandgap reference voltage to a memory controller, e.g., the
device controller 112 of FIG. 1, that can use the bandgap reference
voltage to perform an action on a memory cell in a memory, e.g.,
the memory 116 of FIG. 1. The process 600 can be performed by the
reference voltage circuit.
The reference voltage circuit is initialized by an enabling signal
before a first time point (602). The reference voltage circuit can
include a power supply switch, an operational amplifier, and output
circuitry. The power supply switch can be the power supply switch
410 of FIG. 4, and be configured to receive an original supply
voltage and output a controlled supply voltage based on the
enabling signal. The operational amplifier can be the OPA 420 of
FIG. 4, and can be configured to receive input voltages from the
output circuitry and the controlled supply voltage from the power
supply switch and output a gate control voltage. The output
circuitry can be the output circuitry 430 of FIG. 4, and can be
configured to receive the gate control voltage from the operational
amplifier and the controlled supply voltage from the power supply
switch, provide the input voltages to the operational amplifier,
and output a reference voltage. The reference voltage circuit can
include initialization circuitry configured to perform the
initialization. The initialization circuitry can be coupled to the
power supply switch, the operational amplifier, and the output
circuitry and configured to initialize the controlled supply
voltage and the gate control voltage to ground based on the
enabling signal before the first time point. The initialization
circuitry can be configured to initialize the input voltages to be
grounded based on the enabling signal, together with the controlled
supply voltage and the gate control voltage.
In some implementations, the power supply switch includes a
transistor having a gate for receiving the enabling signal and
configured to generate the controlled supply voltage based on the
original supply voltage based on the enabling signal. The
transistor can be the power transistor 414 of FIG. 4. The power
supply switch can further include an inverter coupled to the gate
of the transistor and configured to convert a control signal into
the enabling signal.
In some cases, during the startup in a power-on stage, the original
supply voltage increases from zero to a target supply voltage, and
the control signal is generated based on a power-on-reset (POR)
signal that is obtained based on the original supply voltage. In
some cases, during the startup in a normal operational stage, the
original supply voltage remains at a target supply voltage, and the
control signal is a wake up signal including a step signal.
In some implementations, the initialization circuitry includes a
plurality of transistors having gates for receiving the enabling
signal, sources coupled to a ground, and drains respectively
coupled to the operational amplifier, the power supply switch, and
the output circuitry.
In some implementations, the operational amplifier comprises
p-channel transistors and n-channel transistors. Sources of the
p-channel transistors can be coupled to the power supply switch and
configured to receive the controlled supply voltage, gates of the
p-channel transistors can be coupled to a drain of a first
transistor of the initialization circuitry, and drains of the
p-channel transistors can be coupled to drains of the n-channel
transistors. Gates of the n-channel transistors can be configured
to receive the input voltages from the output circuitry and
respectively coupled to drains of second and third transistors of
the initialization circuitry.
In some implementations, the output circuitry includes a plurality
of p-channel transistors having gates coupled to the drain of one
of the p-channel transistors of the operational amplifier and
receive the gate control voltage, and the gates of the p-channel
transistors of the output circuitry can be coupled to a drain of a
fourth transistor of the initialization circuitry. The output
circuitry can include a plurality of bipolar junction transistors
(BJTs) having emitters respectively coupled to drains of the
p-channel transistors of the output circuitry, and bases and
collectors of the plurality of BJTs are coupled to the ground, and
the reference voltage can be output at a connection node between a
drain of one of the p-channel transistors of the output circuitry
and an emitter of one of a corresponding BJT of the BJTs of the
output circuitry.
The controlled supply voltage is capacitively coupled to the gate
control signal when the enabling signal becomes to be at a lower
level after the first time point (604). The reference voltage
circuit can include a coupling capacitor having a first end coupled
to the power supply switch for receiving the controlled supply
voltage and a second end coupled to an output of the operational
amplifier for outputting the gate control voltage. The coupling
capacitor is configured such that the gate control voltage can vary
synchronously with the controlled supply voltage during the startup
and be substantially proportional to the controlled supply voltage.
The second end of the coupling capacitor can be coupled to the
drain of the fourth transistor of the initialization circuitry and
the gates of the p-channel transistors of the output circuitry. In
some examples, the coupling capacitor is an MOS transistor having
source and drain coupled together as the first end and a gate as
the second end.
The reference voltage is output based on the gate control voltage
(606). The reference voltage increases from zero at the first time
point and reaches a target voltage at a second time point later
than the first time point. A time period between the first time
point and the second time point is a setup (or startup) time of the
reference voltage circuit. The setup time can be about tens to
hundreds nanoseconds (e.g., 10 ns to 500 ns), which is more than
one order of magnitude shorter than that of a reference voltage
circuit having a startup time within in the microsecond range,
e.g., the reference voltage circuit 200 of FIG. 2.
The reference voltage can be stabilized by the output circuitry to
be independent from temperature, process corner, voltage, or a
combination thereof. In a particular example, the output circuitry
is configured such that the reference voltage is independent from
PVT effect.
The disclosed and other examples can be implemented as one or more
computer program products, for example, one or more modules of
computer program instructions encoded on a computer readable medium
for execution by, or to control the operation of, data processing
apparatus. The computer readable medium can be a machine-readable
storage device, a machine-readable storage substrate, a memory
device, or a combination of one or more them. The term "data
processing apparatus" encompasses all apparatus, devices, and
machines for processing data, including by way of example a
programmable processor, a computer, or multiple processors or
computers. The apparatus can include, in addition to hardware, code
that creates an execution environment for the computer program in
question, e.g., code that constitutes processor firmware, a
protocol stack, a database management system, an operating system,
or a combination of one or more of them.
A system may encompass all apparatus, devices, and machines for
processing data, including by way of example a programmable
processor, a computer, or multiple processors or computers. A
system can include, in addition to hardware, code that creates an
execution environment for the computer program in question, e.g.,
code that constitutes processor firmware, a protocol stack, a
database management system, an operating system, or a combination
of one or more of them.
A computer program (also known as a program, software, software
application, script, or code) can be written in any form of
programming language, including compiled or interpreted languages,
and it can be deployed in any form, including as a standalone
program or as a module, component, subroutine, or other unit
suitable for use in a computing environment. A computer program
does not necessarily correspond to a file in a file system. A
program can be stored in a portion of a file that holds other
programs or data (e.g., one or more scripts stored in a markup
language document), in a single file dedicated to the program in
question, or in multiple coordinated files (e.g., files that store
one or more modules, sub programs, or portions of code). A computer
program can be deployed for execution on one computer or on
multiple computers that are located at one site or distributed
across multiple sites and interconnected by a communications
network.
The processes and logic flows described in this document can be
performed by one or more programmable processors executing one or
more computer programs to perform the functions described herein.
The processes and logic flows can also be performed by, and
apparatus can also be implemented as, special purpose logic
circuitry, e.g., an FPGA (field programmable gate array) or an ASIC
(application specific integrated circuit).
Processors suitable for the execution of a computer program
include, by way of example, both general and special purpose
microprocessors, and any one or more processors of any kind of
digital computer. Generally, a processor will receive instructions
and data from a read only memory or a random access memory or both.
The essential elements of a computer can include a processor for
performing instructions and one or more memory devices for storing
instructions and data. Generally, a computer can also include, or
be operatively coupled to receive data from or transfer data to, or
both, one or more mass storage devices for storing data, e.g.,
magnetic, magneto optical disks, or optical disks. However, a
computer need not have such devices. Computer readable media
suitable for storing computer program instructions and data can
include all forms of nonvolatile memory, media and memory devices,
including by way of example semiconductor memory devices, e.g.,
EPROM, EEPROM, and flash memory devices; magnetic disks. The
processor and the memory can be supplemented by, or incorporated
in, special purpose logic circuitry.
While this document may describe many specifics, these should not
be construed as limitations on the scope of an invention that is
claimed or of what may be claimed, but rather as descriptions of
features specific to particular embodiments. Certain features that
are described in this document in the context of separate
embodiments can also be implemented in combination in a single
embodiment. Conversely, various features that are described in the
context of a single embodiment can also be implemented in multiple
embodiments separately or in any suitable sub-combination.
Moreover, although features may be described above as acting in
certain combinations and even initially claimed as such, one or
more features from a claimed combination in some cases can be
excised from the combination, and the claimed combination may be
directed to a sub-combination or a variation of a sub-combination.
Similarly, while operations are depicted in the drawings in a
particular order, this should not be understood as requiring that
such operations be performed in the particular order shown or in
sequential order, or that all illustrated operations be performed,
to achieve desirable results.
Only a few examples and implementations are disclosed. Variations,
modifications, and enhancements to the described examples and
implementations and other implementations can be made based on what
is disclosed.
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