U.S. patent number 10,943,740 [Application Number 16/447,639] was granted by the patent office on 2021-03-09 for electrical connection contact for a ceramic component, a ceramic component, and a component arrangement.
This patent grant is currently assigned to Epcos AG. The grantee listed for this patent is Epcos AG. Invention is credited to Christoph Auer, Markus Koini, Jurgen Konrad, Markus Puff, Franz Rinner, Monika Stadlober, Thomas Wippel.
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United States Patent |
10,943,740 |
Koini , et al. |
March 9, 2021 |
Electrical connection contact for a ceramic component, a ceramic
component, and a component arrangement
Abstract
An electrical connection contact (5) for a ceramic component (2)
is specified. The connection contact (5) comprises a first material
(M1) and a second material (M2) arranged thereon, wherein the first
material (M1) has a high electrical conductivity and the second
material (M2) has a low coefficient of thermal expansion.
Inventors: |
Koini; Markus (Seiersberg,
AT), Auer; Christoph (Graz, AT), Konrad;
Jurgen (Graz, AT), Rinner; Franz
(Deutschlandsberg, AT), Puff; Markus (Graz,
AT), Stadlober; Monika (Graz, AT), Wippel;
Thomas (Stainz, AT) |
Applicant: |
Name |
City |
State |
Country |
Type |
Epcos AG |
Munchen |
N/A |
DE |
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Assignee: |
Epcos AG (Munich,
DE)
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Family
ID: |
1000005411363 |
Appl.
No.: |
16/447,639 |
Filed: |
June 20, 2019 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20190304702 A1 |
Oct 3, 2019 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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15550672 |
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10395843 |
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PCT/EP2016/054007 |
Feb 25, 2016 |
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Foreign Application Priority Data
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Feb 27, 2015 [DE] |
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102015102866.2 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01G
4/232 (20130101); H01R 43/26 (20130101); H01G
4/38 (20130101); H01G 4/228 (20130101); H01G
4/30 (20130101); H01G 4/248 (20130101); H05K
1/181 (20130101); H01G 2/06 (20130101); H05K
2201/10909 (20130101); H05K 2201/10818 (20130101); H05K
2201/10015 (20130101); H05K 2201/10757 (20130101) |
Current International
Class: |
H01G
4/38 (20060101); H01G 2/06 (20060101); H01G
4/228 (20060101); H01G 4/232 (20060101); H01G
4/30 (20060101); H01R 43/26 (20060101); H05K
1/18 (20060101); H01G 4/248 (20060101) |
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|
Primary Examiner: Varghese; Roshn K
Attorney, Agent or Firm: Nixon Peabody LLP
Parent Case Text
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of U.S. patent application Ser.
No. 15/550,672, filed Aug. 11, 2017, which is a U.S. National Stage
of International Application No. PCT/EP2016/054007, filed Feb. 25,
2016, which claims the benefit of Germany Patent Application No. 10
2015 102 866.2, filed on Feb. 27, 2015, all of which are
incorporated herein by reference in their entireties.
Claims
The invention claimed is:
1. Ceramic component, comprising several sintered bodies, each
sintered body comprising a stack of ceramic layers and electrode
layers, wherein the ceramic layers and electrode layers are
sintered together, wherein the sintered bodies are located adjacent
to each other with a gap located between side faces of the sintered
bodies facing each other, wherein the gap extends along the entire
area of the side faces of the sintered bodies, and two separate
electric connection contacts that are not electrically connected to
each other and that are attached to opposite sides of the sintered
bodies, wherein the ceramic component is separable into smaller
components, wherein each of the connection contacts comprises
several partial contacts, wherein each of the partial contacts
contacts one of the sintered bodies, wherein the partial contacts
are connected by thin links to each other, and wherein the thin
links are breakable for separating the ceramic component into
smaller components.
2. The ceramic component of claim 1, wherein the connection
contacts are formed from a metal plate.
3. The ceramic component of claim 1, wherein each of the connection
contacts comprises a connection area for attachment on a wiring
board.
4. The ceramic component of claim 3, wherein the connection area is
bent inwardly or outwardly.
5. The ceramic component of claim 1, wherein each of the connection
contacts comprises a first layer comprising a first material and a
second layer arranged thereon, the second layer comprising a second
material, wherein the first material has an electric conductivity
of at least 40 m/.OMEGA.mm.sup.2 and the second material has a
thermal expansion coefficient of at most 5 ppm/K.
6. The ceramic component of claim 5, wherein the proportion of a
thickness of the second layer to a thickness of the first layer is
between 1:1 and 5:1.
7. The ceramic component of claim 5, wherein each of the connection
contacts comprises at least one further layer for improving the
connection to a sintering material.
8. The ceramic component of claim 1, wherein each of the connection
contacts comprises at least one layer comprising copper and at
least one layer comprising Invar.
9. The ceramic component of claim 1, wherein each of the connection
contacts is attached by a sintering material on the sintered
bodies.
10. The ceramic component of claim 1, wherein each of the partial
contacts extends from a first edge of one of the sintered bodies
along a side face of the sintered body but does not extend up to a
second edge of the respective sintered body, the second edge being
opposite to the first edge.
11. The ceramic component of claim 1, wherein each of the
connection contacts comprises a connection area for attachment on a
carrier, wherein the thin links of each of the connection contacts
are located near the connection area.
12. Method of producing a ceramic component, the method comprising
the steps of: providing a plurality of sintered bodies, each
sintered body comprising a stack of ceramic layers and electrode
layers, wherein the ceramic layers and electrode layers are
sintered together, wherein the sintered bodies are located adjacent
to each other with a gap located between side faces of the sintered
bodies facing each other, wherein the gap extends along the entire
area of the side faces of the sintered bodies, providing two
separate connection contacts that are not electrically connected to
each other, wherein each of the connection contacts includes
several partial contacts, wherein the partial contacts are
connected by thin links to each other; placing the sintered bodies
between the two connection contacts thereby forming a component
arrangement; separating the component arrangement between two of
the sintered bodies, wherein the thin link of the connection
contact between the sintered bodies is broken.
13. The method of claim 12, wherein each of the connection contacts
is formed by stamping out of a metal plate.
14. The method of claim 12, wherein each of the connection contacts
comprises a first layer comprising a first material and a second
layer comprising a second material, wherein for producing the
connection contacts the first material is rolled onto the second
material.
15. The method of claim 12, wherein each of the partial contacts
extends from a first edge of one of the sintered bodies along a
side face of the respective sintered body but does not extend up to
a second edge of the respective sintered body, the second edge
being opposite to the first edge.
16. A ceramic component, comprising several sintered bodies, each
sintered body comprising a stack of ceramic layers and electrode
layers, wherein the ceramic layers and electrode layers are
sintered together, and two separate electric connection contacts
that are not electrically connected to each other and that are
attached to opposite sides of the sintered bodies, wherein the
ceramic component is separable into smaller components, wherein
each of the connection contacts comprises several partial contacts,
wherein each of the partial contacts contacts one of the sintered
bodies, wherein the partial contacts are connected by thin links to
each other, and wherein the thin links are breakable for separating
the ceramic component into smaller components, wherein each of the
partial contacts extends from a first edge of one of the sintered
bodies along a side face of the sintered body but does not extend
up to a second edge of the respective sintered body, the second
edge being opposite to the first edge.
Description
A connection contact for a ceramic component is specified. The
connection contact is formed from a metal sheet, for example. In
particular, the connection contact can be embodied as a lead frame
or connection bracket.
Ceramic components require an electrical contacting for
interconnection in electronic systems, e.g. by means of a printed
circuit board. External contacts of the ceramic component are
typically connected to the contact locations of a printed circuit
board by a solder material. In power electronics, a particular
technical challenge consists in realizing a thermomechanically
stable linking that simultaneously offers the best possible
electrical and thermal conductivity and a good radio-frequency
behavior.
DE 10 2013 108 753 A1 describes a ceramic component comprising a
connection element.
It is an object of the present invention to specify an improved
connection contact for a ceramic component.
In accordance with a first aspect of the present invention, an
electrical connection contact for a ceramic component is specified.
The connection contact preferably serves for the electrical
connection of the component on a carrier. By way of example, the
connection contact serves for feeding electrical voltage and
electrical signals to the component.
Furthermore, the connection contact can also serve for producing a
mechanical securing and, if appropriate, a thermal connection to
the carrier.
The ceramic component is preferably embodied as a multilayer
component. By way of example, the component comprises a main body
with ceramic layers and electrode layers arranged one above
another. The layers are preferably sintered jointly. In particular,
a capacitor, preferably a power capacitor, can be involved.
The connection contact is designed for securing on the component.
Preferably, the connection contact is formed from a metal sheet. In
this case, from a planar metal sheet, for example, firstly a planar
piece having the dimensions of the connection contact is formed,
for example by stamping out. Afterward, the connection contact is
preferably brought to a bent shape. By way of example, the
connection contact has an angled shape. The connection contact can
also be a lead frame.
By way of example, the connection contact comprises at least one
contact region for securing the connection contact on a main body
of the ceramic component. Furthermore, the connection contact
comprises for example at least one connection region for securing
on a carrier, in particular on a printed circuit board. The
connection region is preferably arranged at an angle with respect
to the contact region. By way of example, the connection region is
bent outward or inward.
In one embodiment, the connection contact comprises two connection
elements. The connection elements are preferably designed for
securing on opposite sides of the main body. The properties of the
connection contact preferably correspondingly apply to each
individual connection element.
The connection contact preferably comprises a material composite.
In this case, the materials are arranged one above another in the
form of layers, for example. In one embodiment, the connection
contact comprises a first material and a second material arranged
thereon. The first material is preferably embodied as a first layer
and the second material as a second layer.
The first material has a high electrical conductivity. A high
electrical conductivity is for example at least 40
m/(.OMEGA.mm.sup.2), preferably at least 50 m/(.OMEGA.mm.sup.2).
Preferably, the first material also has a high thermal
conductivity. A high thermal conductivity is for example at least
250 W/(mK), preferably at least 350 W/(mK).
The second material preferably has particularly good mechanical and
thermomechanical properties. In particular, the second material has
a low coefficient of thermal expansion. A low coefficient of
thermal expansion is for example at most 5 ppm/K, preferably at
most 2.5 ppm/K. The coefficient of expansion is preferably as close
as possible to the coefficient of expansion of the ceramic. A good
thermal adaptation to the ceramic can be achieved in this way. As a
result, a build-up of stress during temperature changes can be
avoided for the most part and cracking in the component can largely
be prevented.
In one preferred embodiment, the first material comprises copper or
consists of copper. Copper has a particularly good electrical and
thermal conductivity.
By way of example, the second material comprises an iron-containing
alloy. Preferably, the second material comprises Invar or consists
of Invar. Invar denotes an iron-nickel alloy comprising
approximately 1/3 nickel and 2/3 iron. This material has a
particularly low coefficient of thermal expansion. In particular,
the coefficient of thermal expansion is close to the coefficient of
expansion of the ceramic. On account of the combination with the
first material, even when the second material has a low electrical
conductivity it is possible to ensure a sufficient conductivity for
the connection contact.
In one embodiment, the connection contact additionally comprises a
third material. The third material is arranged on the second
material, such that the second material is arranged between the
first material and the third material. The third material is
preferably embodied as a third layer. Preferably, the third
material is identical to the first material.
Preferably, the third layer has the same thickness as the first
layer. The embodiment of the third material makes it possible
preferably to prevent warpage of the connection contact in the
event of a temperature change.
In particular, the connection contact can comprise a material
composite composed of copper-Invar-copper. Such a composite can
also be referred to as CIC composite.
In accordance with a further aspect of the present invention, a
ceramic component comprising an electrical connection contact is
specified. The connection contact and the ceramic component can be
embodied as described above. In particular, the connection contact
is secured on a main body of the component. The ceramic component
is a ceramic multilayer capacitor, for example.
The connection contact is preferably secured on a main body of the
component. By way of example, the connection contact comprises two
contact elements arranged on opposite sides of the main body. The
main body comprises an external contact, for example, on which the
connection contact is secured. The external contact is embodied for
example as a metal layer, in particular as a sputtered metal
layer.
In one embodiment, the connection contact is secured on the main
body by a contact material. The contact material is for example a
sintering material, in particular sintering silver. In order to
secure the connection contact on the main body, the contact
material is applied for example on the main body and/or the
connection contact. Afterward, the connection contact is arranged
on the main body and the contact material is sintered. In this way,
it is possible to obtain a high-temperature-resistant and
low-impedance connection between the main body and the connection
contact.
In one embodiment, the component is embodied in such a way that
upon the connection contact being secured on the carrier, the main
body is spaced apart from the carrier. A thermal and mechanical
decoupling of the main body from the carrier can be achieved in
this way. By way of example, the main body is arranged in a
non-centered manner at the connection contact in the height
direction in such a way that an air gap is formed with respect to a
carrier.
In accordance with a further aspect of the present invention, a
component arrangement comprising a ceramic component and a carrier,
on which the component is secured, is specified. The component is
preferably embodied as described above and comprises in particular
the connection contact. The carrier is embodied for example as a
printed circuit board. A ceramic carrier can also be involved.
The connection contact is connected to the carrier by a connecting
material, for example. The connecting material is a solder material
or sintering material, for example. In particular, the connection
contact can be connected to the carrier by the sintering of a
sintering material. By way of example, the sintering is effected in
a pressure sintering method or a pressureless sintering method.
In accordance with a further aspect of the present invention, a
method for producing a connection contact for a ceramic component
is specified. The connection contact is preferably embodied as
described above.
During the production of the connection contact, a metal sheet
comprising the second material is provided. The second material
preferably comprises Invar or consists of Invar. The first material
is then applied, for example rolled, onto the second material. The
second material preferably comprises copper or consists of copper.
Afterward, the third material can be applied, in particular rolled,
onto the opposite side of the metal sheet. The third material is
preferably identical to the first material.
The connection contact can then be brought to a desired shape. By
way of example, the outer dimensions of the connection contact are
defined in a stamping process. The stamped-out piece is
subsequently bent to a desired shape. In particular, an angled
shape of the connection contact can be formed as a result.
In accordance with a further aspect of the present invention, a
method for producing a ceramic component comprising a connection
contact is described. In this case, a connection contact and a main
body of the component are provided. The main body and the
connection contact are preferably embodied as described above. The
connection contact is subsequently secured on the main body. To
that end, by way of example, a contact material is applied on the
main body and/or the connection contact. In particular, the contact
material is embodied as sintering material. Afterward, the
connection contact is arranged on the main body and a sintering
method is carried out.
A plurality of aspects of an invention are described in the present
disclosure. All properties disclosed with respect to the connection
contact, the component, the component arrangement and/or one of the
methods are also correspondingly disclosed with respect to the
respective other aspects, and vice versa, even if the respective
property is not explicitly mentioned in the context of the
respective aspect.
The subjects described here are explained in greater detail below
on the basis of schematic exemplary embodiments which are not true
to scale.
In the figures:
FIG. 1A shows one embodiment of a component arrangement in a
schematic section view,
FIGS. 1B and 1C show detail views of the component arrangement from
FIG. 1A,
FIGS. 2 to 5 show various embodiments of components in perspective
views.
Preferably, in the following figures, identical reference signs
refer to functionally or structurally corresponding parts of the
various embodiments.
FIG. 1A shows a component arrangement 1 comprising an electrical
component 2 and a carrier 3, on which the component 2 is
arranged.
The electrical component 2 comprises a main body 4. The main body 4
preferably comprises a ceramic material. In this case, the
component 2 is referred to as a ceramic component. The component 2
is embodied for example as a multilayer component. In particular,
the main body 4 can comprise a layer stack having ceramic layers
and electrode layers arranged therebetween. All the layers are
preferably sintered jointly. By way of example, the electrode
layers comprise copper. By way of example, the component 2 is
embodied as a capacitor, in particular as a ceramic multilayer
capacitor. In particular, a power capacitor can be involved.
The component 2 comprises a connection contact 5 for the electrical
connection of the component 2. By way of example, the connection
contact 5 comprises two connection elements 18, 19. The connection
elements 18, 19 are arranged for example on opposite sides of the
main body 4. It is also possible for only one of the connection
elements 18, 19 to be designated as connection contact 5.
The connection contact 5 electrically connects the component 2 to
the carrier 3. Furthermore, the connection contact 5 can also serve
for mechanically securing the component 2 on the carrier 3. The
connection contact 5 can also ensure a thermal linking to the
carrier 3.
The connection contact 5 is preferably produced separately from the
main body 5 and subsequently secured on the main body 4.
Preferably, the connection contact 5 is formed from a metal sheet.
In particular, the connection contact 5 can be a connection bracket
or leadframe. The connection contact 5 preferably has the lowest
possible coefficient of thermal expansion alongside a high thermal
and electrical conductivity. These different properties are
preferably ensured by a material composite, in particular by a
multi-layered construction of the connection contact 5. The
construction of the connection contact 5 is described in detail in
association with FIG. 1B.
The connection contact 5 comprises a contact region 6 for securing
on the main body 4 and a connection region 7 for securing on the
carrier 3. The contact region 6 is secured on the main body 4 by
means of a contact material 8, for example. By way of example, the
contact material 8 is arranged in layer form. By way of example,
the contact material 8 is a sintering material. The connection
contact 5 is preferably secured on the main body 4 by the sintering
of the sintering material 8. By way of example, a low-temperature
sintering process, in particular at a temperature in the region of
250.degree. C., is carried out here.
The connection region 7 is arranged at an angle with respect to the
contact region 6. By way of example, the connection region 7 is
oriented at an angle of 90.degree. C. with respect to the contact
region 6. The connection region can be bent outward or inward. In
the case of a connection region 7 bent inward, the connection
region 7 preferably lies below the main body 4. In the case of a
connection region 7 bent outward, the connection region 7
preferably lies alongside the main body 4. The connection contact 5
is preferably embodied in such a way that the main body 4 is
arranged at a distance from the carrier 3. In particular, an air
gap 9 is situated between the main body 4 and the carrier 3.
The carrier 3 is a printed circuit board, for example. By way of
example, the printed circuit board is embodied as an FR4 circuit
board. A ceramic substrate can also be involved. By way of example,
the carrier 3 is embodied as a DCB (direct copper bonded) substrate
in which copper is applied on a ceramic.
The carrier 3 has at least one contact location 10 on which the
connection region 7 of the connection contact 5 is secured. By way
of example, the contact location 10 is a soldering pad or a copper
contact. By way of example, the connection region 7 is soldered or
sintered to the contact location 10. To that end, by way of
example, a connecting material 11 in the form of a solder material
or sintering material is provided.
FIG. 1B shows an enlarged excerpt from FIG. 1A, the position of
which is depicted by "lB" in FIG. 1A. In particular, the
multi-layered construction of the connection contact 5 can be seen.
The connection contact 5 comprises at least a first material M1 and
a second material M2 arranged thereon. The first material M1
differs from the second material M2. In particular, the materials
M1, M2 are embodied as a first layer 12 and a second layer 13
arranged thereon. The first layer is arranged nearer to the main
body 4 than the second layer 13.
The first material M1 and thus the first layer 12 preferably has a
particularly good electrical and thermal conductivity. The first
layer 12 comprises the first material M1 or consists of the first
material M1. Preferably, the first material M1 is copper. Copper
has a specific electrical conductivity of approximately 58
m/(.OMEGA.mm.sup.2), a thermal conductivity of approximately 400
W/(mK) and a coefficient of thermal expansion of approximately 18
ppm/K.
The second material M2 and thus the second layer 13 preferably has
a low coefficient of thermal expansion. Furthermore, the second
layer 13 ensures for example the mechanical strength of the
connection contact 5. The second layer 13 comprises the second
material M2 or consists of the second material M2. By way of
example, Invar is involved in this case. Invar has a specific
electrical conductivity of approximately 1.2 m/(.OMEGA.mm.sup.2), a
thermal conductivity of approximately 13 W/(mK) and a coefficient
of thermal expansion of <2 ppm/K.
Consequently, the first material M1 haws a significantly greater
electrical and thermal conductivity than the second material M2.
The second material M2 has a significantly lower coefficient of
thermal expansion than the first material M1.
The connection contact 5 can additionally comprise a third material
M3. The third material M3 can be the same material as the first
material M1. The third material M3 forms a third layer 14, wherein
the third layer 14 is arranged on the second layer 13. The second
layer 13 is arranged between the first layer 12 and the third layer
14. Preferably, the third layer 14 has the same thickness as the
first layer 12. A bimetallic behavior of the connection contact 5
can be prevented by the third layer 14.
By way of example, the connection contact 5 has a thickness in the
range of between 0.1 mm and 1 mm. In particular, the thickness can
be 0.15 mm. By way of example, the ratio of the thickness of the
second layer 13 to the thickness of the first layer 12 is from 1:1
to 5:1. In particular, the ratio of the thicknesses is 3:1. In the
case of an embodiment of a third layer 14, the ratio of the
thickness of the third layer 14 to the thickness of the second
layer 13 to the thickness of the first layer 12 is for example from
1:1:1 to 1:5:1. In particular the ratio of the thicknesses is
1:3:1. By way of example, the second layer 13 comprises Invar
having a thickness of 90 .mu.m, the first layer 12 comprises copper
having a thickness of 30 .mu.m and the third layer 14 comprises
copper having a thickness of 30 .mu.m. The coefficient of thermal
expansion of such a CIC connection contact is in the range of
approximately 5-7 ppm/K, for example, depending on the thickness
ratio chosen.
The connection contact 5 can furthermore comprise one or a
plurality of further layers 15, 16. The further layers 15, 16 form
for example the outer sides of the connection contact 5. By way of
example, electroplating layers 15, 16, in particular silver layers,
are involved. The electroplating layers have for example in each
case a thickness in the range of 5 .mu.m to 10 .mu.m. The further
layers serve for example for passivation for the first and/or the
third layer 12, 14. In particular, these layers can offer
tarnishing protection. Furthermore, these layers can provide
solderable surfaces or improve the connection to a sintering
material.
In order to produce the connection contact 5, by way of example,
the second layer 13 is provided and this is followed by arranging
thereon the first layer 12 and, if appropriate, the third layer 14.
The second layer 13 is provided in particular as a metal sheet. By
way of example, the first and third layers 12, 14, are rolled onto
the second layer 13. Afterward, by way of example, the
electroplating layers 15, 16 are applied on both sides. By way of
example, a piece is then stamped out from the multi-layered metal
sheet and bent to a desired shape.
The connection contact 5 is preferably secured on an external
contact 17 of the main body 4. The external contact 17 is in
electrical contact with the electrode layers of the main body 4.
The external contact 17 comprises at least one sputtered layer, for
example. The external contact 17 can comprise a plurality of layers
arranged one above another, in particular a plurality of sputtered
layers. By way of example, the external contact 17 comprises
components for adhesion promotion, for a diffusion barrier and for
further contacting. In one embodiment, a Cr/Ni/AG layer
construction is involved. By way of example, the external contact
17 has a thickness in the region of 1 .mu.m.
The connection contact 5 is connected to the external contact 17 by
a contact material 8. The contact material 8 preferably has a high
electrical and thermal conductivity. Furthermore, the contact
material 8 preferably has a high robustness vis-a-vis thermal
cycling loads and a high adhesion force. By way of example, the
contact material 8 comprises a sintering material, in particular
sintering silver. The connection contact 5 is then secured with the
main body 4 by the sintering of the contact material 8. By way of
example, the contact material 8 has a thickness in the region of 20
.mu.m. The contact material 8 is embodied for example like the
contact layer described in DE 10 2013 108 753 A1.
In order to secure the connection contact 5 on the main body 4, by
way of example, the contact material 8 is applied on the main body
4 and/or the connection contact 5. The connection contact 5, in
particular the connection elements 18, 19 are then arranged on the
main body 4 and secured in a sintering method. By way of example, a
low-temperature sintering method is carried out here as well.
FIG. 1C shows an enlarged excerpt from FIG. 1A, the position of
which is depicted by "1C" in FIG. 1A. In particular, the connection
of the connection contact 5 to a contact location 10 of the carrier
3 can be seen here. The carrier 3 with the contact location 10 is
embodied for example as a printed circuit board having contact pads
or as a ceramic substrate having contact pads, in particular as a
DCB substrate.
In one embodiment, the securing is realized by soldering. By way of
example, for this purpose a lead-free SAC solder is used as
connecting material 11. In an alternative embodiment, the securing
is realized by sintering. By way of example, for this purpose a
sintering silver material is used as connecting material 11. In
this case, pressureless sintering or pressure sintering can be
carried out. In this case, the connection regions 7 bent outward
enable a particularly good connection in a pressure sintering
process, since pressure can be exerted directly on the connection
regions 7, without any risk of prior damage to the main body 4 or
the external contact 17.
The construction of the connection contact 5 in its connection
region 7 corresponds to the construction in its contact region 6.
In particular, the connection contact 5 comprises a multi-layered
construction, for example a CIC construction with electroplating
layers applied on both sides.
FIGS. 2 to 5 show various embodiments of connection contacts 5 and
components 2 comprising the connection contacts 5. The connection
contacts 5 in each case comprise the material composite described
with regard to FIGS. 1A-1C. All the components 2 can be secured on
a carrier using SMD mounting, i.e. surface mounting.
FIG. 2 shows a connection contact 5 in the same embodiment as the
connection contact 5 from FIGS. 1A-1C.
In particular, the connection contact 5 comprises two connection
elements 18, 19, which are arranged on opposite sides of a main
body 4 of a component 2. The connection elements 18, 19 each
comprise a contact region 6 and a connection region 7 bent outward.
Consequently, the connection region 7 leads away from the main body
4. In the case of such a geometry, the connection contact 5 can be
secured on a carrier 3 particularly well in a pressure sintering
process.
The main body 4 has a cuboidal shape. The connection contact 5
extends completely over two longitudinal sides of the main body 4.
The connection contact 5 can also extend only partly over outer
sides of the main body. There is a significant height difference
between an underside of the main body 4 and an underside of the
connection region 7, such that the main body 4 can be arranged at a
distance from the carrier 3.
FIG. 3 shows a further embodiment of a connection contact 5 and of
a component 2 comprising the connection contact 5. In contrast to
the connection contact 5 from FIG. 2, the connection region 7 here
is bent inward. The connection region 7 is arranged below the main
body 4. Here, too, an air gap 9 is situated between an underside of
the main body 4 and an underside of the connection region 7. The
main body 4 is thus arranged in a non-centered manner with respect
to the connection contact 5 in the height direction.
FIG. 4 shows a further embodiment of a connection contact 5 and of
a component 2 comprising the connection contact 5. The component 2
comprises a main body 4 having a plurality of partial bodies 20. By
way of example, five partial bodies 20 are provided. The connection
contact 5 comprises two connection elements 18, 19. A common
electrical contact for all the partial bodies 20 is produced via
the connection contact 5. Consequently, the partial bodies 20 are
connected in parallel.
The connection elements 18, 19 each comprise a plurality of
connection regions 7 for securing on a carrier. This enables stable
securing even in the case of a relatively large design. The
connection regions 7 are bent outward.
Cutouts 21 are provided in the contact region 6. The contact region
6 extends over an entire longitudinal side of the main body 4.
FIG. 5 shows a further embodiment of a connection contact 5 and of
a component 2 comprising the connection contact 5. As in FIG. 4,
the component 2 comprises a main body 4 having a plurality of
partial bodies 20.
The component 2 is embodied in the form of a variable "endless"
design. In particular, the component 2 can comprise as many partial
bodies 20 as desired and can subsequently be separated into smaller
components 2. To that end, the connection contact 5 has a separable
form, for example. In particular, the connection contact 5
comprises a multiplicity of partial connections 22 that
respectively contact a partial body 20. Each partial connection 22
comprises a contact region 6 for contacting a partial body. The
contact regions 6 each comprise two contact arms that bear on a
partial body 20. The connection contacts 5 are embodied in a
resilient fashion, for example. The partial connections 22 can be
connected to one another by thin webs (not shown). The partial
connections 22 can be singulated by the webs being perforated.
In order to increase the mechanical stability, the component 2
comprises a base 23, for example a plastic base, on which the main
body 4 is arranged. The connection contact 5 is lead through the
base 23. Alternatively, the connection contact 5 can also be lead
around a narrow side of the base 23.
LIST OF REFERENCE SIGNS
1 Component arrangement 2 Component 3 Carrier 4 Main body 5
Connection contact 6 Contact region 7 Connection region 8 Contact
material 9 Air gap 10 Contact location 11 Connecting material 12
First layer 13 Second layer 14 Third layer 15 Further layer 16
Further layer 17 External contact 18 Connection element 19
Connection element 20 Partial body 21 Cutout 22 Partial connection
23 Base M1 First material M2 Second material M3 Third material
* * * * *
References