U.S. patent number 10,839,127 [Application Number 15/350,614] was granted by the patent office on 2020-11-17 for temperature calculation method, information processing device, and non-transitory recording medium storing temperature calculation program.
This patent grant is currently assigned to FUJITSU LIMITED. The grantee listed for this patent is FUJITSU LIMITED. Invention is credited to Kazuhisa Inagaki, Yasuhiro Ite, Tetsuyuki Kubota, Hideharu Matsushita, akihiro otsuka, Akira Sakai, Takamasa Shinde, Akira Ueda.
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United States Patent |
10,839,127 |
Kubota , et al. |
November 17, 2020 |
Temperature calculation method, information processing device, and
non-transitory recording medium storing temperature calculation
program
Abstract
A temperature calculation method for a substrate, the
temperature calculation method includes: calculating, by a computer
performing a circuit simulation based on a resistance equivalent to
a component that joins two substrates included in a target model of
an analysis, a value of a current that flows through the component
or voltage values in respective end portions of the component;
setting, based on model information for expressing the target
model, the current value or the voltage values in a first surface
and a second surface that are included in surfaces of an outer
shape of the component and that are in contact with the respective
substrates; and calculating a first current density distribution of
the component by performing a first electrical analysis according
to the setting.
Inventors: |
Kubota; Tetsuyuki (Yokohama,
JP), Ueda; Akira (Yokohama, JP),
Matsushita; Hideharu (Yokohama, JP), otsuka;
akihiro (Yokohama, JP), Ite; Yasuhiro (Chofu,
JP), Shinde; Takamasa (Kawasaki, JP),
Inagaki; Kazuhisa (Yokohama, JP), Sakai; Akira
(Kawasaki, JP) |
Applicant: |
Name |
City |
State |
Country |
Type |
FUJITSU LIMITED |
Kawasaki |
N/A |
JP |
|
|
Assignee: |
FUJITSU LIMITED (Kawasaki,
JP)
|
Family
ID: |
1000005186695 |
Appl.
No.: |
15/350,614 |
Filed: |
November 14, 2016 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20170220720 A1 |
Aug 3, 2017 |
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Foreign Application Priority Data
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Feb 3, 2016 [JP] |
|
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2016-019343 |
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G06F
30/367 (20200101); G06F 2119/08 (20200101) |
Current International
Class: |
G06F
30/367 (20200101) |
Field of
Search: |
;703/14 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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H05-266151 |
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Oct 1993 |
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JP |
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2001-188821 |
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Jul 2001 |
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JP |
|
Other References
Funato, Hiroki, Takashi Suga, and Michihiko Suhara. "Model-based
analysis of screw locations to reduce radiation from a PCB-chassis
structure." 2014 IEEE International Symposium on Electromagnetic
Compatibility (EMC). IEEE, 2014. pp. 123-127. (Year: 2014). cited
by examiner .
Suwa, Tohru, and Hamid Hadim. "Multidisciplinary placement
optimization of heat generating electronic components on a printed
circuit board in an enclosure." IEEE Transactions on Components and
Packaging Technologies 30.3 (2007). pp. 402-410. (Year: 2007).
cited by examiner.
|
Primary Examiner: Shah; Kamini S
Assistant Examiner: Johansen; John E
Attorney, Agent or Firm: Fujitsu Patent Center
Claims
What is claimed is:
1. A calculation method for a substrate, the calculation method
comprising: calculating, by a computer, by performing a circuit
simulation based on model information which corresponds to
three-dimensional model information representing a target model of
an analysis including at least two substrates and a component that
joins the at least two substrates in such a manner that one surface
of the component is in contact with one of the at least two
substrates and the other surface of the component is in contact
with the other of the at least two substrates and includes a
resistance equivalent to the component, a value of a current that
flows through the component or voltage values in the one surface
and the other surface; setting, in the three-dimensional model
information, the calculated current value or the calculated voltage
values in the one surface and the other surface; calculating a
first current density distribution of the component by performing a
3-dimensional electrical analysis on the component in which the
calculated current value or the calculated voltage values are set
in the three-dimensional model information; converting the first
current density distribution of the component into a first heat
generation density distribution of the component; calculating a
second current density distribution of the one of the at least two
substrates by performing a 2.5-dimensional analysis on the one of
the at least two substrates; converting the second current density
distribution of the one of the at least two substrates into a
second heat generation density distribution of the one of the at
least two substrates; calculating a third current density
distribution of the other of the at least two substrates by
performing a 2.5-dimensional analysis on the other of the at least
two substrates; converting the third current density distribution
of the other of the at least two substrates into a third heat
generation density distribution of the other of the at least two
substrates; calculating an entire temperature distribution in the
two substrates and the component by performing a 3-dimensional
thermal fluid analysis, based on the three-dimensional model
information, the first heat generation density distribution, the
second heat generation density distribution and the third heat
generation density distribution; and outputting the entire
temperature distribution in the two substrates and the
component.
2. The calculation method according to claim 1, further comprising
calculating a value of the resistance by performing, based on the
three-dimensional model information, a second electrical analysis
in a case where different voltage values are set in the respective
first and second surfaces.
3. The calculation method according to claim 2, further comprising
in the calculating the current value or the voltages, calculating
the current value or the voltage values, based on the circuit
simulation in a case of setting to the value of the resistance.
4. An information processing device, comprising: a memory that
stores a calculation program; and a processor that performs, based
on the calculation program, operations of: calculating, by
performing a circuit simulation based on model information which
corresponds to three-dimensional model information representing a
target model of an analysis including at least two substrates and a
component that joins the at least two substrates in such a manner
that one surface of the component is in contact with one of the at
least two substrates and the other surface of the component is in
contact with the other of the at least two substrates and includes
a resistance equivalent to the component, a value of a current that
flows through the component or voltage values in the one surface
and the other surface; setting, in the three-dimensional model
information, the calculated current value or the calculated voltage
values in the one surface and the other surface; calculating a
first current density distribution of the component by performing a
3-dimensional electrical analysis on the component in which the
calculated current value or the calculated voltage values are set
in the three-dimensional model information; converting the first
current density distribution of the component into a first heat
generation density distribution of the component; calculating a
second current density distribution of the one of the at least two
substrates by performing a 2.5-dimensional analysis on the one of
the at least two substrates; converting the second current density
distribution of the one of the at least two substrates into a
second heat generation density distribution of the one of the at
least two substrates; calculating a third current density
distribution of the other of the at least two substrates by
performing a 2.5-dimensional analysis on the other of the at least
two substrates; converting the third current density distribution
of the other of the at least two substrates into a third heat
generation density distribution of the other of the at least two
substrates; calculating an entire temperature distribution in the
two substrates and the component by performing a 3-dimensional
thermal fluid analysis, based on the three-dimensional model
information, the first heat generation density distribution, the
second heat generation density distribution and the third heat
generation density distribution; and outputting the entire
temperature distribution in the two substrates and the
component.
5. The information processing device according to claim 4, wherein
the processor calculates a value of the resistance by performing,
based on the model information, a second electrical analysis in a
case where different voltage values are set in the respective first
and second surfaces.
6. The information processing device according to claim 5, wherein
the processor, in the calculating the current value or the
voltages, calculates the current value or the voltage values, based
on the circuit simulation in a case of setting to the value of the
resistance.
7. A non-transitory recording medium storing calculation program
which causes a computer to perform processes, the processes
comprising: calculating, by performing a circuit simulation based
on model information which corresponds to three-dimensional model
information representing a target model of an analysis including at
least two substrates and a component that joins the at least two
substrates in such a manner that one surface of the component is in
contact with one of the at least two substrates and the other
surface of the component is in contact with the other of the at
least two substrates and includes a resistance equivalent to the
component, a value of a current that flows through the component or
voltage values in the one surface and the other surface; setting,
in the three-dimensional model information, the calculated current
value or the calculated voltage values in the one surface and the
other; calculating a first current density distribution of the
component by performing a 3-dimensional electrical analysis on the
component in which the calculated current value or the calculated
voltage values are set in the three-dimensional model information;
converting the first current density distribution of the component
into a first heat generation density distribution of the component;
calculating a second current density distribution of the one of the
at least two substrates by performing a 2.5-dimensional analysis on
the one of the at least two substrates; converting the second
current density distribution of the one of the at least two
substrates into a second heat generation density distribution of
the one of the at least two substrates; calculating a third current
density distribution of the other of the at least two substrates by
performing a 2.5-dimensional analysis on the other of the at least
two substrates; converting the third current density distribution
of the other of the at least two substrates into a third heat
generation density distribution of the other of the at least two
substrates; calculating an entire temperature distribution in the
two substrates and the component by performing a 3-dimensional
thermal fluid analysis, based on the three-dimensional model
information, the first heat generation density distribution, the
second heat generation density distribution and the third heat
generation density distribution; and outputting the entire
temperature distribution in the two substrates and the
component.
8. The non-transitory recording medium according to claim 7,
further comprising calculating a value of the resistance by
performing, based on the three-dimensional model information, a
second electrical analysis in a case where different voltage values
are set in the respective first and second surfaces.
9. The non-transitory recording medium according to claim 8,
further comprising in the calculating the current value or the
voltages, calculating the current value or the voltage values,
based on the circuit simulation in a case of setting to the value
of the resistance.
Description
CROSS-REFERENCE TO RELATED APPLICATION
This application is based upon and claims the benefit of priority
of the prior Japanese Patent Application No. 2016-019343, filed on
Feb. 3, 2016, the entire contents of which are incorporated herein
by reference.
FIELD
The embodiments discussed herein are related to a temperature
calculation method, an information processing device, and a
non-transitory recording medium storing a temperature calculation
program.
BACKGROUND
In in-vehicle electronic devices and so forth, high-density mounted
electronic devices are used under high-temperature
environments.
A related technology is disclosed in Japanese Laid-open Patent
Publication No. 5-266151 or Japanese Laid-open Patent Publication
No. 2001-188821.
SUMMARY
According to an aspect of the embodiments, a temperature
calculation method for a substrate, the temperature calculation
method includes: calculating, by a computer performing a circuit
simulation based on a resistance equivalent to a component that
joins two substrates included in a target model of an analysis, a
value of a current that flows through the component or voltage
values in respective end portions of the component; setting, based
on model information for expressing the target model, the current
value or the voltage values in a first surface and a second surface
that are included in surfaces of an outer shape of the component
and that are in contact with the respective substrates; and
calculating a first current density distribution of the component
by performing a first electrical analysis according to the
setting.
The object and advantages of the invention will be realized and
attained by means of the elements and combinations particularly
pointed out in the claims.
It is to be understood that both the foregoing general description
and the following detailed description are exemplary and
explanatory and are not restrictive of the invention, as
claimed.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 illustrates an example of an operation of an information
processing device;
FIG. 2 illustrates an example of a 3-dimensional thermal fluid
analysis model based on a current density distribution obtained by
a 2.5-dimensional analysis;
FIG. 3 illustrates an example of a hardware configuration of the
information processing device;
FIG. 4 illustrates an example of a functional configuration of the
information processing device;
FIG. 5 illustrates an example of a 3-dimensional model;
FIG. 6 illustrates an example of a data structure in 3-dimensional
model information;
FIG. 7 illustrates an example of a setting of electrical
conductivities;
FIG. 8 illustrates an example of a setting of voltage values at a
time of deriving an electrical resistance;
FIG. 9 illustrates an example of a circuit analysis;
FIG. 10 illustrates an example of a setting of current values and
voltage values at a time of deriving a current density distribution
of a connecting component;
FIG. 11A and FIG. 11B each illustrate an example of a 3-dimensional
electrical analysis;
FIG. 12 illustrates examples of mappings of respective current
density distributions;
FIG. 13 illustrates an example of temperature calculation
processing performed by the information processing device; and
FIG. 14 illustrates an example of the temperature calculation
processing performed by the information processing device.
DESCRIPTION OF EMBODIMENTS
At a time of, for example, designing a substrate, an increasing
temperature is predicted by using a 3-dimensional thermal fluid
analysis.
Based on, for example, boundary conditions of a space including
printed circuit boards within a device housing, the boundary
conditions being calculated from a result of a 3-dimensional
thermal analysis of the device housing, a thermal analysis of
mounted components on the printed circuit boards is performed.
From, for example, pieces of substrate layout setting data,
connection source substrate layout setting data serving as an
starting point of an inter-substrate connection setting and
connection destination substrate layout setting data serving as an
ending point thereof are individually selected and extracted,
thereby generating inter-substrate connection information, and
waveform analysis information is extracted, thereby performing an
entire waveform analysis.
At a time of, for example, performing a 3-dimensional thermal fluid
analysis of a substrate, a heat source is set based on a density
distribution of a current conducted through a substrate obtained
based on a 2.5-dimensional analysis.
In the 2.5-dimensional analysis, a current density distribution
including a connecting component such as, for example, a bus bar or
a connector which connects substrates is not obtained. Therefore,
it may be difficult to obtain a temperature distribution of an
entire circuit board including the connecting component.
FIG. 1 illustrates an example of an operation of an information
processing device. An information processing device 100 may be a
computer to calculate temperature distributions of two substrates
including a component for connecting the two substrates included in
a target model of an analysis. The information processing device
100 executes a temperature distribution calculation program for the
substrates.
The target model of an analysis is provided in a simulation space.
The simulation space is a virtual 3-dimensional space simulated on
the computer. Specifically, the simulation space is, for example, a
space virtually set within the information processing device 100 in
order to perform a design or an analysis of a 3-dimensional object.
In the simulation space, a 3-dimensional orthogonal coordinate
system having, for example, an X-axis, a Y-axis, a and Z-axis is
defined. The object may be, for example, a product including
substrates and so forth and is not specifically limited. In FIG. 1,
the object includes a substrate PA, a substrate PB, and a
connecting component cnt to connect the substrate PA and the
substrate PB to each other.
By using, for example, computer aided design (CAD), a developer
creates 3-dimensional model information of a 3-dimensional model
that has a 3-dimensional shape and that expresses the object by use
of polygons. The 3-dimensional model information may include, for
example, coordinate data of the polygons, and so forth. Before
actually creating the object, the developer simulates, on the
computer by using computer aided engineering (CAE), whether a
designed object satisfies demand performances. Here, the CAE may
include 3 pieces of software called a preprocessor, a solver, and a
postprocessor.
The preprocessor of the CAE performs element division and defines
boundary conditions, thereby creating 3-dimensional model
information 103 for expressing a 3-dimensional model 101. The
solver of the CAE may be a structural analysis solver to perform a
numerical analysis on the 3-dimensional model 101 expressed by the
3-dimensional model information 103. The postprocessor of the CAE
visualizes an analysis result obtained by the solver of the
CAE.
The information processing device 100 may perform portion of
processing related to the preprocessor of the CAE and the solver of
the CAE.
FIG. 2 illustrates an example of a 3-dimensional thermal fluid
analysis model based on a current density distribution obtained by
a 2.5-dimensional analysis. As illustrated in, for example, FIG. 2,
in the 2.5-dimensional analysis, a current density distribution
including a component such as a bus bar or a connector which
connects substrates is not obtained. Therefore, no temperature
distribution of an entire circuit board including the connecting
component cnt may be obtained. The 2.5-dimensional analysis may be
an analysis based on, for example, a PEEK method or the like and
has 5 degrees of freedom, for example. In the 2.5-dimensional
analysis, vias establishing connections between, for example,
layers of substrates are replaced with resistances, thereby
performing an analysis.
Based on a 3-dimensional electrical analysis in which a value of a
current of the component for connecting the two substrates,
calculated from a circuit analysis, is set in surfaces of the
component, the surfaces being in contact with the respective
substrates, the information processing device 100 calculates a
current density distribution of the component. Based on the current
density distribution of the connecting component cnt, a temperature
distribution of the connecting component cnt is obtained.
As illustrated in (1) in FIG. 1, by using a circuit simulation
based on a resistance equivalent to the component for connecting
the two substrates included in the target model of an analysis, the
information processing device 100 calculates a value of the current
that flows through the component. Therefore, a current value 104 of
the connecting component is obtained. The target model of an
analysis may be the 3-dimensional model 101 illustrated in FIG. 1.
The component may be the connecting component cnt. The value of a
resistance equivalent to the connecting component cnt may be, for
example, a catalog value serving as a performance announced from a
catalog or the like by a maker that manufactures the connecting
component cnt. The value of the resistance equivalent to the
connecting component cnt may be, for example, a value of a
resistance, calculated from the 3-dimensional electrical
analysis.
The circuit simulation may be a simulation of an analog operation
of a circuit. A SPICE simulator or the like may be used, for
example. Circuit model information 102 is described by a simulation
program with integrated circuit emphasis (SPICE) description format
for expressing a circuit model including a circuit LA equivalent to
the substrate PA, a circuit LB equivalent to the substrate PB, and
a resistance R equivalent to the connecting component cnt. Based on
the circuit model information 102, the information processing
device 100 performs a circuit simulation, thereby deriving a value
of a current flowing through the resistance R, as the value of a
current conducted through the connecting component cnt.
By performing, based on the 3-dimensional model information 103, an
electrical analysis in a case of setting values of currents
calculated for respective 2 surfaces that are in contact with the
respective two substrates and that are included in surfaces of an
outer shape of the connecting component cnt, the information
processing device 100 calculates a current density distribution in
the connecting component cnt. A surface that is in contact with the
substrate PA and that is included in the surfaces of the outer
shape of the connecting component cnt is a surface SA, and a
surface that is in contact with the substrate PB and that is
included in the surfaces of the outer shape of the connecting
component cnt is a surface SB.
Since current density distribution in the connecting component cnt
is obtained, a temperature distribution based on the current
density distribution is set in the connecting component cnt at a
time of a thermal fluid analysis of substrates. Therefore,
temperature information of the substrates including the connecting
component cnt is obtained.
As illustrated in FIG. 2, the current density distribution obtained
from the 2.5-dimensional analysis is obtained in a single
substrate. However, in the 2.5-dimensional analysis, a current
density distribution including a component such as, for example, a
bus bar or a connector which connects substrates is not
obtained.
FIG. 3 illustrates an example of a hardware configuration of the
information processing device. The information processing device
100 may be, for example, a personal computer (PC).
The information processing device 100 includes a central processing
unit (CPU) 301, a read only memory (ROM) 302, and a random access
memory (RAM) 303. The information processing device 100 includes a
disk drive 304, a disk 305, an inter/face (I/F) 306, a keyboard
307, a mouse 308, and a display 309. The CPU 301, the ROM 302, the
RAM 303, the disk drive 304, the I/F 306, the keyboard 307, the
mouse 308, and the display 309 are connected to one another by a
bus 300.
The CPU 301 manages control of the entire information processing
device 100. The ROM 302 stores therein programs such as a boot
program and a design support program. The RAM 303 is used as a work
area of the CPU 301. In accordance with control from the CPU 301,
the disk drive 304 controls read/write of data, performed on the
disk 305. The disk 305 stores therein data written based on control
from the disk drive 304. The disk 305 may store therein a program
such as, for example, the design support program. As the disk 305,
a magnetism disk, an optical disk, or the like is used. The CPU 301
reads the design support program and so forth, stored in the ROM
302 or the disk 305, thereby performing processing coded in the
design support program.
The I/F 306 is connected to a network 310 such as a local area
network (LAN), a wide area network (WAN), or the Internet via a
communication line and is connected to another via the network 310.
In addition, the I/F 306 manages an interface between the network
310 and the inside and controls inputting and outputting of data
from and to an external device. As the I/F 306, for example, a
modem, a LAN adapter, or the like may be adopted.
Each of the keyboard 307 and the mouse 308 is an interface that
performs inputting of various kinds of data, in accordance with an
operation of a user. The display 309 is an interface that outputs
data in accordance with an instruction from the CPU 301.
The information processing device 100 may include an input device
to import images and moving images from a camera, and an input
device to import sounds from a microphone. The information
processing device 100 may include an output device such as a
printer. The information processing device 100 may include, for
example, a solid state drive (SSD), a semiconductor memory, and so
forth.
The information processing device 100 may be a PC, a server, or the
like and is not specifically limited. In a case where the
information processing device 100 is the server, the information
processing device 100, a device operable by a user, the display
309, and so forth may be connected to one another via the network
310. The information processing device 100 may be applied to, for
example, a virtual desktop infrastructure (VDI) system and so
forth. The server performs processing based on, for example, the
information processing device 100, and a client terminal displays a
screen corresponding to the processing.
In a case where the information processing device 100 is the PC,
some processing operations out of processing operations based on
the information processing device 100 may be performed by the
server. The 3-dimensional electrical analysis, the 2.5-dimensional
analysis, and so forth may be performed by, for example, the PC,
and the 3-dimensional thermal fluid analysis and so forth may be
performed by the server.
FIG. 4 illustrates an example of a functional configuration of the
information processing device. The information processing device
100 includes a first 3-dimensional electrical analysis unit 401, a
circuit analysis unit 402, a second 3-dimensional electrical
analysis unit 403, a first current density distribution analysis
unit 404, a second current density distribution analysis unit 405,
and a 3-dimensional thermal fluid analysis unit 406. Processing in
a control unit including the first 3-dimensional electrical
analysis unit 401 to the 3-dimensional thermal fluid analysis unit
406 may be coded in a program stored in a storage unit 411 such as,
for example, the ROM 302, the RAM 303, or the disk 305 accessible
by the CPU 301 and illustrated in FIG. 3. The CPU 301 reads the
relevant program from the storage unit 411, thereby executing the
processing coded in the program. From this, the processing in the
control unit is realized. A processing result of the control unit
may be stored in the storage unit 411 such as, for example, the RAM
303, the ROM 302, or the disk 305.
FIG. 5 illustrates an example of a 3-dimensional model. A
3-dimensional model 500 is obtained by modeling an object serving
as a design target to be provided in a simulation space. The
3-dimensional model 500 includes, for example, the substrate PA,
the substrate PB, and a connecting component cnt-1 and a connecting
component cnt-2 that each connect the substrate PA and the
substrate PB to each other. In a case of indicating one component
of the connecting component cnt-1 and the connecting component
cnt-2, the connecting component cnt-1 or the connecting component
cnt-2 may be shortened and called a connecting component cnt. A
space of an analysis target including a 3-dimensional object
designed by the CAD or the like is divided into meshes by using
grid points, thereby modeling the space of the analysis target. In,
for example, a structural analysis, an electromagnetic field
analysis, or a fluid analysis, which uses a computer, a numerical
analysis in which an equation is solved for each of grid points is
performed. Information for expressing the 3-dimensional model 500
may be called the 3-dimensional model information 103.
FIG. 6 illustrates an example of a data structure in 3-dimensional
model information. The 3-dimensional model information 103 is
information for expressing the 3-dimensional model 500 serving as
an analysis target. In FIG. 6, a portion of one of the connecting
components cnt will be described. In the 3-dimensional model 500,
an object serving as an analysis target is divided into elements
serving as small fine areas, and an entire shape is illustrated as
a group of elements. The elements each include nodes. Each of the
nodes is a vertex of an element, an intermediate point of a side
between vertices of elements, or the like. The 3-dimensional model
information 103 includes, for example, node information 601
illustrated in (1) in FIG. 6 and element information 602
illustrated in (2) in FIG. 6. The 3-dimensional model information
103 is stored in, for example, the storage unit 411.
The node information 601 illustrated in (1) in FIG. 6 includes, for
each of nodes included in elements, position information of the
relevant node, for example. The node information 601 includes
fields of a node number, an x-coordinate, a y-coordinate, and a
z-coordinate. In the field of the node number, node numbers for
identifying respective nodes are set. In the field of the
x-coordinate, values of the x-coordinate in the X-axis out of 3
axes of X, Y, and Z that are perpendicular to one another and that
are defined in the simulation space are set. In the field of the
y-coordinate, values of the y-coordinate in the Y-axis out of the 3
axes of X, Y, and Z that are perpendicular to one another and that
are defined in the simulation space are set. In the field of the
z-coordinate, values of the z-coordinate in the Z-axis out of the 3
axes of X, Y, and Z that are perpendicular to one another and that
are defined in the simulation space are set. The node numbers may
range from 1 to Nn, for example. In a case where the node number
is, for example, "1", the value of the x-coordinate is "n1x", the
value of the y-coordinate is "n1y", and the value of the
z-coordinate is "n1z".
The element information 602 illustrated in (2) in FIG. 6 is
information for indicating, for each of elements, nodes included in
the relevant node, for example. The element information 602
includes fields in which node numbers included in the elements are
settable, for example.
As the 3-dimensional model information 103, the element information
602 of elements included in the 3-dimensional model 500, node
points included in the elements, position information of the node
points, and so forth are cited. Information for indicating a shape
of the 3-dimensional model 500 may be pieces of information such
as, for example, a volume and a surface area. The 3-dimensional
model information 103 may include information for indicating, for
example, a material of the model. The 3-dimensional model
information 103 may include, for example, information of boundary
conditions to be set in the 3-dimensional model 500 at a time of an
analysis.
Based on, for example, the 3-dimensional model information 103, the
first 3-dimensional electrical analysis unit 401 illustrated in
FIG. 4 extracts surfaces that are in contact with the respective
substrate PA and substrate PB and that are included in individual
surfaces of the connecting component cnt. In FIG. 6, surfaces in
which the two substrates PA and PB are in contact with the
connecting component cnt are the respective surface SA and surface
SB.
Based on the 3-dimensional model information 103, the first
3-dimensional electrical analysis unit 401 performs an electrical
analysis in a case where predetermined different voltage values are
set in the respective extracted surfaces, and thus the first
3-dimensional electrical analysis unit 401 calculates a value of a
resistance equivalent to the connecting component cnt.
FIG. 7 illustrates an example of a setting of electrical
conductivities. In setting information 700, an electrical
conductivity is set for each of the elements included in the
connecting component cnt, as a physical property value of the
connecting component cnt at a time of obtaining the value of the
electrical resistance by performing the 3-dimensional electrical
analysis. In FIG. 7, an electrical conductivity is set for each of
the elements included in the connecting component cnt. However, an
electrical conductivity may be set for each of the nodes included
in the connecting component cnt. In FIG. 7, in a case where the
element number is, for example, "1", the electrical conductivity is
4.6E9 [S/m].
FIG. 8 illustrates an example of a setting of voltage values at a
time of deriving an electrical resistance. At a time of deriving
the electrical resistance between the surface SA and the surface
SB, the first 3-dimensional electrical analysis unit 401 sets the
surface SA and the surface SB to respective different electric
potentials. In setting information 800, the surface SA is set to 1
[V], and the surface SB is set to 0 [V]. While, in FIG. 8, the
first 3-dimensional electrical analysis unit 401 sets voltage
values in nodes included in the surface SA and the surface SB, the
first 3-dimensional electrical analysis unit 401 may set voltage
values in, for example, surfaces of elements included in the
surface SA and the surface SB.
Based on the set electrical conductivities and the set voltage
values, the first 3-dimensional electrical analysis unit 401
performs the 3-dimensional electrical analysis, thereby calculating
a value of a current that flows between the surface SA and the
surface SB. Based on the calculated current value and the set
voltage values, the first 3-dimensional electrical analysis unit
401 derives the value of the electrical resistance between the
surface SA and the surface SB by using Ohm's law. The Ohm's law is
Resistance=Voltage/Current.
Based on the resistance equivalent to the connecting component cnt,
the circuit analysis unit 402 illustrated in FIG. 4 performs a
circuit simulation, thereby calculating the value of the current
that flows through the connecting component cnt. The value of the
resistance equivalent to the connecting component cnt may be, for
example, the value of a resistance defined in the connecting
component cnt or may be the value of the resistance calculated by
the first 3-dimensional electrical analysis unit 401 as described
above. The value of the resistance defined in the connecting
component cnt may be, for example, a catalog value serving as a
performance announced from a catalog or the like by a maker that
manufactures the connecting component cnt.
FIG. 9 illustrates an example of a circuit analysis. Based on the
circuit model information 102, the circuit analysis unit 402
performs a circuit simulation in a case where the value of the
resistance equivalent to the connecting component cnt is set to the
value of a resistance, calculated by the first 3-dimensional
electrical analysis unit 401. The circuit simulation may be, for
example, a simulation of an analog operation of a circuit. For the
circuit simulation, a circuit simulator such as, for example, the
SPICE may be used.
In the circuit model information 102, a circuit model including the
circuit LA equivalent to the substrate PA, the circuit LB
equivalent to the substrate PB, a resistance R-1 equivalent to the
connecting component cnt-1, and a resistance R-2 equivalent to the
connecting component cnt-2 is described in the description format
of the SPICE or the like. In a case of indicating one of the
resistance R-1 and the resistance R-2, the resistance R-1 or the
resistance R-2 may be shortened and called a resistance R. Based on
the circuit analysis unit 402, a value of a current conducted
through the corresponding one of the connecting component cnt and
values of voltages in respective end portions of the relevant
connecting component cnt are obtained. Values of voltages
calculated for respective end portions of each of the resistances R
become the values of voltages in respective end portions of the
corresponding one of the connecting components cnt, for example.
The value of the current that flows through the corresponding one
of the resistances R becomes the value of the current conducted
through the corresponding one of the connecting components cnt, for
example. A circuit analysis result obtained by the circuit analysis
unit 402 is stored in the storage unit 411. The circuit analysis
result includes the current value 104 of each of the connecting
components cnt, the voltage values of the relevant connecting
component cnt, and so forth.
By performing, based on the 3-dimensional model information 103,
the 3-dimensional electrical analysis in a case of setting values
of currents calculated for respective surfaces in which the two
substrates are in contact with the connecting components cnt, the
second 3-dimensional electrical analysis unit 403 calculates
current density distributions in the respective connecting
components cnt. Based on the 3-dimensional model information 103,
regarding each of the connecting components cnt, the second
3-dimensional electrical analysis unit 403 illustrated in, for
example, FIG. 4 sets, for each of the surface SA and the surface
SB, a value of a current or a value of a voltage, obtained, as a
boundary condition of the relevant connecting component cnt, based
on a circuit analysis performed by the circuit analysis unit
402.
FIG. 10 illustrates an example of a setting of current values or
voltage values at a time of deriving a current density distribution
of a connecting component. In setting information 1000, as values
of voltages, the surface SA is set to 3 [V], and the surface SB is
set to 0.3 [V], or alternatively, as values of currents, both the
surface SA and the surface SB are set to 1.1 [mA].
The second 3-dimensional electrical analysis unit 403 illustrated
in FIG. 4 performs the 3-dimensional electrical analysis, thereby
deriving a current density distribution of each of the connecting
components cnt in a case of setting the surface SA and the surface
SB to respective values of currents and respective values of
voltages, analyzed by the circuit analysis unit 402.
FIG. 11A and FIG. 11B each illustrate an example of a 3-dimensional
electrical analysis. Even in a case of the same input current and
the same resistance value, if the shape of the corresponding one of
the connecting components cnt varies, a current density
distribution varies. Therefore, the second 3-dimensional electrical
analysis unit 403 performs the 3-dimensional electrical analysis,
thereby deriving the current density distribution. FIG. 11A and
FIG. 11B illustrate examples in which heat generation density
distributions are different in a case where the corresponding one
of the connecting components cnt has 2 different shapes. The shape
of the corresponding one of the connecting components cnt,
illustrated in FIG. 11A, is thin only in the middle, whereas the
shape of the relevant connecting components cnt, illustrated in
FIG. 11B, is thin except for portions near the respective surface
SA and surface SB.
Even in a case of the same input current and the same resistance
value, in such a shape of a connector as illustrated in FIG. 11A,
heat generation is concentrated in the middle. In contrast, in such
a shape of a connector as illustrated in FIG. 11B, heat is
generated overall. In this way, by performing the 3-dimensional
electrical analysis, a high-accuracy current density distribution
is obtained in accordance with the shape of each of the connecting
components cnt. Information for indicating the current density
distribution of each of the connecting components cnt, obtained by
the second 3-dimensional electrical analysis unit 403, is stored in
storage unit 411, as the current density distribution information
422 of the relevant connecting component cnt.
Based on the 3-dimensional model information 103, the first current
density distribution analysis unit 404 performs the 2.5-dimensional
analysis, thereby deriving a current density distribution for the
substrate PA. Information for indicating the current density
distribution for the substrate PA, obtained by the first current
density distribution analysis unit 404, is stored in the storage
unit 411, as the current density distribution information 423 of
the substrate PA.
Based on the 3-dimensional model information 103, the second
current density distribution analysis unit 405 performs the
2.5-dimensional analysis, thereby deriving a current density
distribution for the substrate PB. Information for indicating the
current density distribution for the substrate PB, obtained by the
second current density distribution analysis unit 405, is stored in
the storage unit 411, as the current density distribution
information 424 of the substrate PB.
Based on current density distributions for the respective
substrates and current density distributions for the respective
connecting components cnt, the 3-dimensional thermal fluid analysis
unit 406 performs the 3-dimensional thermal fluid analysis, thereby
deriving an entire temperature distribution.
FIG. 12 illustrates examples of mappings of respective current
density distributions. The 3-dimensional thermal fluid analysis
unit 406 maps, to the 3-dimensional model 500 expressed by the
3-dimensional model information 103, a current density distribution
1201 for the substrate PA, a current density distribution 1202 for
the substrate PB, and current density distributions 105 for the
respective connecting components cnt.
The 3-dimensional thermal fluid analysis unit 406 converts the
current density distribution 1201 for the substrate PA into, for
example, a heat generation density distribution for the substrate
PA. The 3-dimensional thermal fluid analysis unit 406 converts the
current density distribution 1202 for the substrate PB into, for
example, a heat generation density distribution for the substrate
PB. The 3-dimensional thermal fluid analysis unit 406 converts the
current density distributions 105 for the respective connecting
components cnt into, for example, heat generation density
distributions for the respective connecting components cnt.
Conversion of the current density distribution into the heat
generation density distribution means conversion of current
densities [A/m.sup.2] into respective heat generation densities
[W/m.sup.3].
The 3-dimensional thermal fluid analysis unit 406 sets each of the
heat generation density distributions in the corresponding elements
of the 3-dimensional model 500 and performs the 3-dimensional
thermal fluid analysis, thereby deriving an entire temperature
distribution. Therefore, information for indicating the temperature
distribution is stored in the storage unit 411, as the temperature
distribution information 425.
FIG. 13 and FIG. 14 illustrate an example of temperature
calculation processing performed by the information processing
device. First, the information processing device 100 acquires the
3-dimensional model information 103 (operation S1301). The
3-dimensional model information 103 may be information for dividing
an object of an analysis target into meshes and for indicating a
shape by using elements. The information processing device 100
acquires the circuit model information 102 (operation S1302). The
circuit model information 102 may be information in which a circuit
model including a circuit equivalent to the substrate PA, a circuit
equivalent to the substrate PB, and resistances equivalent to the
respective connecting components cnt is described in the SPICE
description format. The 3-dimensional model information 103 and the
circuit model information 102 may be acquired by being read from
the storage unit 411 or the like or may be acquired from another
device via the network 310. The information processing device 100
may generate the 3-dimensional model information 103 and the
circuit model information 102, thereby acquiring the 3-dimensional
model information 103 and the circuit model information 102.
For the 3-dimensional model information 103, the information
processing device 100 sets common names with the circuit model
information 102, in the connecting components cnt that each connect
the substrate PA and the substrate PB (operation S1303). For the
circuit model information 102, the information processing device
100 sets common names with the 3-dimensional model information 103,
in the resistances R equivalent to the respective connecting
components cnt that each connect the substrate PA and the substrate
PB (operation S1304). The names may be, for example, inductance
names of the respective resistances R.
Based on the 3-dimensional model information 103, for each of the
connecting components cnt, the information processing device 100
extracts individual surfaces that are in contact with the
respective substrate PA and substrate PB and that are included in
surfaces of the relevant connecting component cnt (operation
S1305). The information processing device 100 defines, as the
surface SA, a surface that is in contact with the substrate PA and
that is included in the surfaces of the relevant component and
defines, as the surface SB, a surface that is in contact with the
substrate PB and that is included in the surfaces of the relevant
component.
Based on the 3-dimensional model information 103, in each of the
connecting components cnt, the information processing device 100
derives a value of an electrical resistance between the surface SA
and the surface SB by using the 3-dimensional electrical analysis
(operation S1306). At a time of performing the 3-dimensional
electrical analysis, the information processing device 100 sets
values of voltages for respective elements or nodes of the surface
SA and the surface SB and performs the 3-dimensional electrical
analysis, based on the set values of voltages.
In the circuit model expressed by the circuit model information
102, the information processing device 100 sets the values of the
resistances equivalent to the respective connecting components cnt
to the derived values of electrical resistances (operation S1307).
The information processing device 100 executes a circuit simulation
(operation S1308).
In the 3-dimensional model 500, for the surface SA and the surface
SB of each of the connecting components cnt, the information
processing device 100 sets a value of a current conducted through
the relevant connecting component cnt and voltage values of
respective end portions of the relevant connecting component cnt,
obtained by the circuit simulation (operation S1401). Based on the
set current values and the set voltage values, the information
processing device 100 performs the 3-dimensional electrical
analysis, thereby deriving the current density distributions 105 of
the respective connecting components cnt (operation S1402). The
information processing device 100 converts the current density
distributions 105 for the respective connecting components cnt into
heat generation density distributions (operation S1403).
The information processing device 100 derives the current density
distribution 1201 for the substrate PA by using the 2.5-dimensional
analysis (operation S1404). The information processing device 100
converts the current density distribution 1201 for the substrate PA
into a heat generation density distribution (operation S1405).
The information processing device 100 derives the current density
distribution 1202 for the substrate PB by using the 2.5-dimensional
analysis (operation S1406). The information processing device 100
converts the current density distribution 1202 for the substrate PB
into a heat generation density distribution (operation S1407).
Based on the individual heat generation density distributions and
the 3-dimensional model information 103, the information processing
device 100 performs the 3-dimensional thermal fluid analysis,
thereby deriving an entire temperature distribution (operation
S1408). The information processing device 100 outputs the entire
temperature distribution obtained by the 3-dimensional thermal
fluid analysis (operation S1409), and thus, a series of processing
operations finishes.
The information processing device 100 may perform any one of the
processing for calculating the current density distributions for
the respective connecting components cnt and the processing for
calculating the current density distributions for the respective
substrate PA and the substrate PB, in advance of the other
thereof.
The information processing device 100 sets, in surfaces of the
components in contact with the individual two substrates, values of
currents of the respective connecting components that connect the
two substrates, the values of currents being calculated by the
circuit analysis, and performs an electrical analysis, thereby
calculating the current density distributions of the respective
components. Since the current density distributions in the
respective connecting components cnt are obtained, temperature
distributions based on the current density distributions are set in
the respective connecting components cnt at a time of a thermal
fluid analysis of the substrates. Therefore, temperature
information of the substrates including the connecting components
cnt is obtained.
The electrical analysis set in the surfaces of the components in
contact with the individual substrates is the 3-dimensional
electrical analysis, and accordingly, current density distributions
corresponding to the shapes of the respective connecting components
cnt are obtained. Therefore, the accuracy of the current density
distributions may be improved.
Based on the 3-dimensional model information 103, the information
processing device 100 performs an electrical analysis in a case
where predetermined voltage values are set in the respective
surfaces of the components in contact with the individual
substrates, thereby calculating the values of the resistances
equivalent to the components. The values of the respective
resistances are estimated with the higher degree of accuracy, and
accordingly, the accuracy of a simulation of the values of currents
conducted through the respective components may be improved.
Therefore, the accuracy of the temperature information of the
substrates including the connecting components cnt may be
improved.
Based on the 3-dimensional model information 103, the information
processing device 100 performs an electrical analysis in a case
where calculated values of currents are set for respective
surfaces, in which the two substrates are in contact with the
components, and values of voltages in respective end portions of
the resistances, obtained by the circuit simulation, are set.
Therefore, since the values of the resistances are estimated with
the higher degree of accuracy, the accuracy of a simulation of the
values of currents conducted through the respective components may
be improved. Therefore, the accuracy of the temperature information
of the substrates including the connecting components cnt may be
improved.
Based on the current density distributions of the respective two
substrates and the calculated current density distributions of the
respective components, the information processing device 100
performs the 3-dimensional thermal fluid analysis, thereby
calculating the temperature distributions of the two substrates and
components. Since the temperature information of the substrates
including the connecting components cnt is easily obtained,
simplification of the design of substrates operable under a
high-temperature environment may be achieved.
The information processing device 100 converts the current density
distributions into the respective heat generation density
distributions and performs, based on the individual converted heat
generation density distributions, the 3-dimensional thermal fluid
analysis, thereby calculating the temperature distributions of the
2 substrate and the components. The temperature information of the
substrates including the connecting components cnt is easily
obtained, and thus, simplification of the design of substrates
operable under a high-temperature environment may be achieved.
The above-mentioned temperature calculation method may be realized
by executing a temperature calculation program, prepared in
advance, by using a computer such as a personal computer or a
workstation. The present temperature calculation program is
recorded in a computer-readable recording medium such as a
magnetism disk, an optical disk, or a universal serial bus (USB)
flash memory and is read from the recording medium by the computer,
thereby being executed. The temperature calculation program may be
distributed via a network such as the Internet.
All examples and conditional language recited herein are intended
for pedagogical purposes to aid the reader in understanding the
invention and the concepts contributed by the inventor to
furthering the art, and are to be construed as being without
limitation to such specifically recited examples and conditions,
nor does the organization of such examples in the specification
relate to a showing of the superiority and inferiority of the
invention. Although the embodiments of the present invention have
been described in detail, it should be understood that the various
changes, substitutions, and alterations could be made hereto
without departing from the spirit and scope of the invention.
* * * * *