U.S. patent number 10,388,581 [Application Number 15/959,353] was granted by the patent office on 2019-08-20 for semiconductor device having press-fit terminals disposed in recesses in a case frame.
This patent grant is currently assigned to Mitsubishi Electric Corporation. The grantee listed for this patent is Mitsubishi Electric Corporation. Invention is credited to Shinsuke Asada, Minoru Egusa, Hidetoshi Ishibashi, Yoshitaka Kimura.
United States Patent |
10,388,581 |
Ishibashi , et al. |
August 20, 2019 |
Semiconductor device having press-fit terminals disposed in
recesses in a case frame
Abstract
A semiconductor device includes an insulating substrate, a
semiconductor element provided on the insulating substrate, a case
frame, a press-fit terminal, and a sealing member provided on an
inner side of an inner wall part on the insulating substrate to
seal the semiconductor element. The case frame is made of an
insulating material and includes an outer wall part, an inner wall
part, a recess bottom surface forming a recess together with the
outer wall part and the inner wall part. The press-fit terminal
includes a base part, a body part, and a press-in portion. The base
part is embedded in the recess bottom surface and the body part
stands upright from the recess bottom surface such that the body
part extends between the inner wall part and the outer wall part,
and the press-in portion protrudes up out of the recess.
Inventors: |
Ishibashi; Hidetoshi (Tokyo,
JP), Asada; Shinsuke (Tokyo, JP), Kimura;
Yoshitaka (Tokyo, JP), Egusa; Minoru (Tokyo,
JP) |
Applicant: |
Name |
City |
State |
Country |
Type |
Mitsubishi Electric Corporation |
Tokyo |
N/A |
JP |
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Assignee: |
Mitsubishi Electric Corporation
(Tokyo, JP)
|
Family
ID: |
65727861 |
Appl.
No.: |
15/959,353 |
Filed: |
April 23, 2018 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20190103330 A1 |
Apr 4, 2019 |
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Foreign Application Priority Data
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Oct 3, 2017 [JP] |
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2017-193299 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
23/24 (20130101); H01L 23/053 (20130101); H01R
12/585 (20130101); H01L 23/055 (20130101); H01L
23/3121 (20130101); H01L 24/48 (20130101); H01L
2924/13055 (20130101); H01L 24/45 (20130101); H01L
2924/19107 (20130101); H01L 2224/73265 (20130101); H01L
24/32 (20130101); H01L 2224/48227 (20130101); H01L
2224/32227 (20130101); H01L 2224/45124 (20130101); H01L
2224/48157 (20130101); H01L 2924/13091 (20130101); H01L
2224/291 (20130101); H01L 24/29 (20130101); H01L
2924/13055 (20130101); H01L 2924/00 (20130101); H01L
2924/13091 (20130101); H01L 2924/00 (20130101); H01L
2224/45124 (20130101); H01L 2924/00014 (20130101); H01L
2224/291 (20130101); H01L 2924/014 (20130101) |
Current International
Class: |
H01L
23/48 (20060101); H01L 23/055 (20060101); H01L
23/31 (20060101); H01R 12/58 (20110101); H01L
23/00 (20060101) |
Field of
Search: |
;257/697 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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2015-023226 |
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Feb 2015 |
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JP |
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2016-219778 |
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Dec 2016 |
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JP |
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2018-133481 |
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Aug 2018 |
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JP |
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Primary Examiner: Henry; Caleb E
Attorney, Agent or Firm: Studebaker & Brackett PC
Claims
What is claimed is:
1. A semiconductor device, comprising: an insulating substrate; a
semiconductor element provided on the insulating substrate; a case
frame made of an insulating material and provided along peripheral
edges of the insulating substrate such as to surround the
semiconductor element in plan view of the insulating substrate, the
case frame including an outer wall part, an inner wall part
provided closer to a center side of the insulating substrate than
the outer wall part, a recess bottom surface sandwiched between the
outer wall part and the inner wall part and forming a recess
together with the outer wall part and the inner wall part; a
press-fit terminal including a base part connected to the
semiconductor element via a wire, a body part standing upright from
the base part, and a press-in portion provided at an upper end of
the body part, the base part being embedded in the recess bottom
surface and the body part standing upright from the recess bottom
surface such that the body part extends in an interspace between
the inner wall part and the outer wall part while remaining
entirely out of physical contact with at least one of the inner
wall part and the outer wall part, and the press-in portion
protrudes up out of the recess; and a sealing member provided on an
inner side of the inner wall part on the insulating substrate to
seal the semiconductor element.
2. The semiconductor device according to claim 1, wherein the body
part includes a constricted portion positioned higher than the
recess bottom surface inside the recess.
3. The semiconductor device according to claim 1, wherein the inner
wall part is an insulating member fixedly attached on the recess
bottom surface.
4. The semiconductor device according to claim 1, wherein the inner
wall part has an upper end positioned lower than a center position
of the press-in portion and higher than a connecting position
between the press-in portion and the body part.
5. The semiconductor device according to claim 1, wherein the body
part of the press-fit terminal that extends in the interspace
between the inner wall part and the outer wall part remains out of
contact with the inner wall part and the outer wall part.
6. The semiconductor device according to claim 1, wherein the
recess where the terminal does not contact is hollow.
Description
BACKGROUND
1. Technical Field
The present application relates to a semiconductor device.
2. Description of the Related Art
Conventionally, as disclosed, for example, in Japanese Patent
Application Laid-open No. 2015-023226, semiconductor devices are
known, wherein signal terminals stand upright on the bottom surface
of a cavity formed in a case frame. The signal terminals in this
conventional semiconductor device are normal terminals and not
press-fit terminals. The cavity is provided presumably for allowing
a connector to be inserted.
SUMMARY
A press-fit terminal includes a base part, a body part extending
upright from the base part, and a press-in portion provided at one
end of the body part. The press-in portion of the press-fit
terminal is inserted into a through hole of a printed circuit board
or the like. When the press-in portion is inserted into the through
hole, it is firmly pressed against the through hole. This pressure
contact between the press-in portion and the through hole provides
mechanical and electrical connection between the printed circuit
board or the like and the press-fit terminal.
Press-fit terminals should preferably be able to tolerate
deformation to some extent when a load is applied. To be more
specific, fitting the through hole of the printed circuit board
with the press-in portion of the press-fit terminal applies a load
to the press-in portion, and this load to the press-in portion acts
to compress the press-fit terminal in an axial direction. When the
through hole and press-in portion are misaligned, another force
acts to deflect the press-fit terminal sideways. The body part can
flexibly deflect to allow the press-fit terminal to receive these
various forces. The longer the body part of the press-fit terminal,
the higher the deformation tolerance of the press-fit terminal can
be when a load is applied to the press-in portion. Deformation
tolerance is a feature necessary for the connection principle of
press-fit terminals and therefore considered not significant for
conventional connector terminals.
Insulation properties of semiconductor devices covered in a sealing
member can be increased by making the sealing member thicker. The
thicker the sealing member, the higher its upper surface will be
positioned. If the press-fit terminal is provided such as to stand
on the upper surface of the sealing member, making the sealing
member thick will cause most of the body part of the press-fit
terminal to be embedded in the resin. If the body part is made to
protrude sufficiently long from the upper surface of the sealing
member to avoid this, the overall height dimension of the
semiconductor device, which is the sum of the length of the
press-fit terminal and the thickness of the sealing member, will be
increased. There was thus a problem that the height dimension of
the semiconductor device would be increased if the deformation
tolerance of press-fit terminals is to be achieved as well as the
electrical insulation by the sealing resin is to be ensured.
It is an object of the application to provide an improved
semiconductor device that can achieve both of electrical insulation
properties of the semiconductor device and deformation tolerance of
press-fit terminals while suppressing an increase of the height
dimension of the semiconductor device.
A semiconductor device according to the present application,
includes: an insulating substrate; a semiconductor element provided
on the insulating substrate; a case frame; a press-fit terminal;
and a sealing member. The case frame is made of an insulating
material and is provided along peripheral edges of the insulating
substrate such as to surround the semiconductor element in plan
view of the insulating substrate. The case frame includes an outer
wall part, an inner wall part provided closer to a center side of
the insulating substrate than the outer wall part, a recess bottom
surface sandwiched between the outer wall part and the inner wall
part and forming a recess together with the outer wall part and the
inner wall part. The press-fit terminal includes a base part
connected to the semiconductor element via a wire, a body part
standing upright from the base part, and a press-in portion
provided at an upper end of the body part. The base part is
embedded in the recess bottom surface and the body part stands
upright from the recess bottom surface such that the body part
extends in an interspace between the inner wall part and the outer
wall part. The press-in portion protrudes up out of the recess. The
sealing member is provided on an inner side of the inner wall part
on the insulating substrate to seal the semiconductor element.
The features and advantages of the present disclosure (or
embodiments) may be summarized as follows.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 is a plan view illustrating a semiconductor device according
to Embodiment 1;
FIG. 2 is a side view of the semiconductor device according to
Embodiment 1;
FIG. 3 is a cross-sectional view along line A-A in FIG. 1 of the
semiconductor device according to Embodiment 1;
FIG. 4 is a cross-sectional view along line B-B in FIG. 3 of the
semiconductor device according to Embodiment 1;
FIG. 5 is a perspective view illustrating the press-fit terminals
of the semiconductor device according to Embodiment 1;
FIG. 6 is a cross-sectional view of the semiconductor device
according to a variation example of Embodiment 1;
FIG. 7 is a cross-sectional view of the semiconductor device
according to a variation example of Embodiment 1;
FIG. 8 is a cross-sectional view of a semiconductor device
according to Embodiment 2 at the position corresponding to the line
A-A of FIG. 1; and
FIG. 9 is a cross-sectional view of the semiconductor device
according to a variation example of Embodiment 2.
DESCRIPTION OF THE EMBODIMENTS
Embodiment 1
FIG. 1 is a plan view illustrating a semiconductor device 1
according to Embodiment 1. FIG. 2 is a side view of the
semiconductor device 1 according to Embodiment 1. FIG. 3 is a
cross-sectional view along line A-A in FIG. 1 of the semiconductor
device 1 according to Embodiment 1.
FIG. 1 and FIG. 2 illustrate the outer appearance of the
semiconductor device 1. The semiconductor device 1 includes a case
frame 2, an insulating substrate 3, a semiconductor element 9, a
sealing member 11, and press-fit terminals 20. For convenience of
explanation, an up-and-down direction will be referred to in
describing the structure of the semiconductor device 1. This
up-and-down direction is a direction defined relative to the
insulating substrate 3 as a reference. The up-and-down direction
merely indicates a positional relationship relative to the
insulating substrate 3, and does not limit the relationship
relative to the vertical direction and horizontal direction. The
relationships between various parts of the semiconductor device 1
and the vertical/horizontal directions are defined in accordance
with the direction in which the semiconductor device 1 is attached.
FIG. 1, FIG. 2, and other drawings indicate xyz orthogonal
coordinate axes for convenience of explanation. The z direction
indicates the "up" direction of the semiconductor device 1, which
is also the "height" direction of the semiconductor device 1. The z
direction also indicates the "thickness" direction of various parts
of the semiconductor device 1. The x direction indicates the
"length dimension" of the semiconductor device 1, and the y
direction indicates the "width dimension" of the semiconductor
device 1.
The internal structure of the semiconductor device 1 will be
described with reference to FIG. 3. The insulating substrate 3 and
the case frame 2 make up the case of the semiconductor device 1.
The insulating substrate 3 includes a base plate 4, an insulating
layer 6 provided on the front surface of the base plate 4, and a
circuit pattern 7 formed on the insulating layer 6. The insulating
substrate 3 can be regarded as a circuit board having the circuit
pattern 7 for mounting the semiconductor element 9 on the surface.
The base plate 4 and the circuit pattern 7 are made of a metal
material. More specifically, aluminum or copper may be used as this
metal material. For the insulating layer 6, epoxy resin or the like
may be used, with a ceramic filler mixed therein.
The semiconductor element 9 is provided on the insulating substrate
3. More specifically, the semiconductor element 9 is mounted on the
circuit pattern 7 formed on the insulating substrate 3 via a
bonding agent 8. One example of bonding agent 8 is solder. The
semiconductor element 9 is connected to the pattern by metal wires
10 such as aluminum wires. The semiconductor element 9 may be a
switching element. More specifically, the semiconductor element 9
may be an IGBT or MOS-FET. The semiconductor element 9 may be made
of a silicone material, or, the semiconductor element 9 may be made
of a wide-bandgap semiconductor material that has a wider bandgap
than silicone. Wide-bandgap semiconductors may be made of SiC, GaN,
or diamond. An inverter circuit is formed by the semiconductor
element 9 and the circuitry on the insulating substrate 3. Although
not shown, diode elements that form the inverter circuit may be
provided inside the semiconductor device 1.
The case frame 2 is provided along peripheral edges of the
insulating substrate 3 such as to surround the semiconductor
element 9 in plan view of the insulating substrate 3 shown in FIG.
1. The case frame 2 includes inner wall parts 2a, recess bottom
surfaces 2b, and outer wall parts 2c. The inner wall parts 2a are
positioned closer to the center of the insulating substrate 3 than
the outer wall parts 2c. The recess bottom surfaces 2b are each
sandwiched between the outer wall parts 2c and the inner wall parts
2a, and configure recesses 2d together with the outer wall parts 2c
and inner wall parts 2a. The case frame 2 is formed from an
insulating material. Preferably, the case frame 2 is made of
engineering plastic that has high insulating properties.
FIG. 4 is a cross-sectional view along line B-B in FIG. 3 of the
semiconductor device 1 according to Embodiment 1. The press-fit
terminal 20 includes a base part 24, a body part 23 standing
upright from the base part 24, and a press-in portion 21 at the
upper end of the body part 23. The press-fit terminal 20 is
substantially L-shaped and fixed to the case frame 2. The
connecting portion between the base part 24 and the body part 23 is
embedded in the recess bottom surface 2b. The distal end of the
base part 24 is exposed from the case frame 2. The distal end of
the base part 24 is connected to the semiconductor element 9 by the
metal wire 10. The body part 23 stands vertically upright from the
recess bottom surface 2b. The body part 23 extends in an interspace
between the inner wall part 2a and the outer wall part 2c. The
press-in portion 21 protrudes up out of the recess 2d. The
press-fit terminal 20 is preferably made of copper alloy, and the
surface thereof is plated with Ni, Sn or the like. Although not
shown in the simplified illustration in FIG. 4, the press-fit
terminal in Embodiment 1 includes a constricted portion 23a in the
body part 23 as shown in FIG. 5 which will be described below.
The press-in portion 21 has an elliptic ring-like structure with an
opening 22 in the center. The press-in portion 21 with the opening
22 provides the press-fit function. The press-in portion 21 is
press-fit into a through hole 30a of the printed circuit hoard 30,
whereby the press-fit terminal 20 is electrically connected to the
through hole 30a. The press-fit terminal 20 functions as a terminal
of a main circuit and a control circuit.
FIG. 5 is a perspective view illustrating the press-fit terminals
20 of the semiconductor device 1 according to Embodiment 1. The
body part 23 has the constricted portion 23a. The constricted
portion 23a is a portion of the body part 23 where the width is
reduced. The constricted portion 23a is positioned higher than the
recess bottom surface 2b inside the recess 2d.
The semiconductor element 9 is covered by the sealing member 11 so
that it is insulated and sealed. The sealing member 11 fills the
space inside the inner wall parts 2a on the insulating substrate 3.
The sealing member 11 may fill the inner space up to the same
height as the upper ends of the inner wall parts 2a, or, the upper
surface 11a of the sealing member 11 may be positioned lower than
the upper ends of the inner wall parts 2a. In either case, the
upper surface 11a of the sealing member 11 is positioned higher
than the recess bottom surfaces 2b. For the sealing member 11, hard
epoxy resin with silica having insulating properties, or silicone
gel and the like may be used.
In FIG. 3 and FIG. 4, the printed circuit board 30 is shown by
broken lines for convenience of illustration. When the
semiconductor device 1 is in actual operation, the printed circuit
board 30 is placed to overlap the upper surface 11a of the sealing
member 11. The printed circuit board 30 includes through holes 30a.
The press-in portions 21 of the press-fit terminals 20 are inserted
into the through holes 30a.
In this semiconductor device 1, the body parts 23 stand upright
from the recess bottom surfaces 2b, so that the length of the
portion of the body parts 23 that is not embedded in the insulating
material can be made larger. If the body parts 23 of the press-fit
terminals 20 are entirely fixed by the sealing member 11, the
deformation tolerance against thermal stress will be deteriorated,
and the deformation tolerance against, for example, misalignment
relative to the through holes 30a of the printed circuit board 30
will also be degraded. In this semiconductor device 1, it is
ensured that the body parts 23 are not embedded in the sealing
member, so that the deformation tolerance of the press-fit terminal
20 when a load is applied to the press-in portion 21 can be
enhanced. When the semiconductor element 9 is made of SiC, in
particular, the thermal stress generated during the operation of
the semiconductor device 1 will be accordingly high, since SiC
semiconductor devices are capable of operating at high
temperatures. In this semiconductor device 1, the press-fit
terminals 20 can exhibit high deformation tolerance against thermal
stress during such high-temperature operations. The inside space of
the inner wall parts 2a can be filled with the sealing member 11
such as to cover the semiconductor element 9, whereby the sealing
member 11 can be provided up to near the upper ends of the inner
wall parts 2a. Thus the sealing member 11 covering the
semiconductor element 9 can have a sufficient thickness, so that
electric insulation is ensured.
The recesses 2d between the inner wall parts 2a and the outer wall
parts 2c provide open space for allowing the body parts 23 to
deflect. Even if the sealing member 11 fills up the space nearly to
the upper ends of the inner wall parts 2a to make the sealing
member 11 thick, the body parts 23 will not be embedded in the
sealing member 11. Thus, making the sealing member 11 thick, and
keeping the body parts 23 of the press-fit terminals 20 freely
deformable, can both be achieved, with the use of the inner wall
parts 2a and recesses 2d of the case frame 2. Accordingly, reliable
electrical insulation of the semiconductor device 1 and improved
deformation tolerance of the press-fit terminals 20 are both
achieved, with minimal increase in the overall height dimension of
the semiconductor device 1.
When the material of the sealing member 11 is poured onto the
semiconductor element 9, it is ensured that the body parts 23 of
the press-fit terminals 20 are exposed from the sealing member 11,
because of the recesses 2d formed in the case frame 2. It is
another advantage that the material injection process of the
sealing member 11 can be carried out more easily.
In Embodiment 1, the constricted portion 23a is provided. The
constricted portion 23a enables the press-fit terminal 20 to deform
more easily in accordance with a misalignment relative to the
through hole 30a and environmental thermal stresses. This way, the
reliability of the semiconductor device 1 is improved even more.
Even if the through holes 30a of the printed circuit board 30 and
the press-fit terminals 20 are not in alignment, such misalignment
can be absorbed as the constricted portions 23a easily deform. This
prevents the press-in portions 21 from undergoing abnormal
defamation due to excessive stress, or prevents damage to the
through holes, and thereby ensures stable conduction quality
between the contacts. Note, however, the constricted portion 23a
may be omitted, as one variation of the press-fit terminal 20.
The semiconductor device 1 has a built-in inverter circuit. With
the semiconductor device 1, which provides high levels of size
reduction, electrical insulation, and connection reliability of
press-fit terminals, compact inverter units of consistent quality
can be obtained.
FIG. 6 is a cross-sectional view of the semiconductor device 1
according to a variation example of Embodiment 1. In the variation
example of FIG. 6, the case frame 2 is formed in a shape that does
not have inner wall parts 2a. The case frame 2 immediately after
the molding does not have inner wall parts 2a. Instead, inner wall
parts 12 are formed after that in the variation example of FIG. 6
by fixedly attaching an insulating member to the recess bottom
surfaces 2b of the case frame 2. That is, an insulating member that
is molded separately from the case frame 2 is attached, to provide
the inner wall parts 12. There are no limitations on the material
of the inner wall parts 12 as long as it has insulating properties.
It may be made of a resin material, for example. For molding the
case frame 2 that includes the inner wall parts 2a and recess
bottom surfaces 2b integrally as shown in FIG. 1, the metal molds
need to be fabricated such that the recesses 2d will have a certain
size to be large enough in consideration of resin moldability. On
the other hand, by forming the inner wall parts 12 with separate
parts as in this variation example, the width of the recesses 2d
can be minimized, and the press-fit terminals 20 can be made as
close to the inner wall parts 12 and outer wall parts 2c as
possible. This enables a size reduction of the semiconductor device
1. In the variation example of FIG. 6, the upper surface 11a of the
sealing member 11 is positioned lower than the upper ends of the
inner wall parts 12, by a difference of D1. Note, however, the
upper surface 11a of the sealing member 11 may be made flush with
the upper ends of the inner wall parts 12 in the variation example
of FIG. 6.
FIG. 7 is a cross-sectional view of the semiconductor device 1
according to a variation example of Embodiment 1. As shown in FIG.
7, the upper end of the inner wall part 2a may be positioned lower
than a center position of the press-in portion 21 and higher than a
connecting position between the press-in portion 21 and the body
part 23. In FIG. 7, the lower end of the press-in portion 21 is
positioned tower than the upper end of the inner wall part 2a by a
distance of D2. With the lower end of the press-in portion 21 being
positioned lower than the inner wall part 2a, the distal end
position of the press-fit terminal 20 can be made lower, which will
enable a further reduction in thickness of the semiconductor device
1. Since the upper end of the inner wall part 2a is positioned
lower than the center position of the press-in portion 21, the
press-in portion 21 can be inserted into the through hole 30a
without hindrance. The inner wall parts 2a can prevent the sealing
member 11 from adhering to the press-in portions 21, so that the
reliability of the press-fit connection can be ensured.
Various known press-fit structures can be applied to the press-fit
terminals 20. Some known press-fit terminals have a "press-in
portion without the opening 22". Such known press-fit terminals
without the opening 22 may also be used instead of the press-fit
terminals 20.
As one variation of the insulating substrate 3, it may have an
insulating circuit board made of ceramics or the like instead of
the insulating layer 6 and circuit pattern 7. Insulating substrates
having the base plate 4 and a ceramic insulating circuit board laid
thereon are already known and will not be described further.
Embodiment 2
FIG. 8 is a cross-sectional view of a semiconductor device 101
according to Embodiment 2 at the position corresponding to the line
A-A of FIG. 1. The difference between Embodiment 1 and Embodiment 2
is whether the press-fit terminals 20 and printed circuit board 30
are positioned outside or inside the semiconductor device 101. The
semiconductor device 101 according to Embodiment 2 has the
press-fit terminals 20 accommodated inside the semiconductor device
101 as internal electrodes. The printed circuit board 30 is also
accommodated inside the semiconductor device 101. The advantageous
effects described in Embodiment 1 are achieved also when providing
the semiconductor device 101 designed as an intelligent power
module having the printed circuit board 30 mounted inside, whereby
the height dimension of the semiconductor device 101 can be
reduced.
Unlike Embodiment 1, the printed circuit board 30 is disposed
inside the case frame 102, and a lid 130 is placed over the printed
circuit board 30. The case frame 102 and lid 130 should preferably
be made of engineering plastic that has high insulating
properties.
The case frame 102 includes inner wall parts 2a, recess bottom
surfaces 2b, and outer wall parts 2c, similarly to Embodiment 1.
The case frame 102 according to Embodiment 2 additionally has a
step 102e and an outer frame part 102f on the outer side of the
outer wall parts 2c of the case frame 102. Peripheral edges of the
printed circuit board 30 overlap the step 102e. External electrode
terminals 120 are provided at the upper end of the outer frame part
102f. The external electrode terminals 120 are connected to the
printed circuit board 30, the circuit pattern 7 or the like via
wires (not shown).
The lid 130 is attached to the case frame 102 such as to overlap
the printed circuit board 30. The lid 130 covers the press-fit
terminals 20 and printed circuit board 30. In Embodiment 2, the
press-fit terminals 20 function as internal electrode terminals of
the semiconductor device 101.
FIG. 9 is a cross-sectional view of the semiconductor device 101
according to a variation example of Embodiment 2. Similarly to the
variation example of FIG. 6, the inner wall parts 12 may be formed
by fixedly attaching an insulating member to the recess bottom
surfaces 2b.
A variation of Embodiment 1 similar to that described with
reference to FIG. 7 is also possible. Namely, the upper ends of the
inner wall parts 2a may be positioned lower than the center
position of the press-in portions 21 and higher than the connecting
position between the press-in portions 21 and the body parts
23.
Various other changes similar to Embodiment 1 can be made to
Embodiment 2, too. While FIG. 4 and FIG. 7 show protrusions at the
upper ends of the press-in portions 21, these protrusions may be
omitted. They are not shown in FIG. 2, FIG. 3, FIG. 5 and other
drawings for the sake of simplicity.
The features and advantages of the present disclosure (or
embodiments) may be summarized as follows. According to the present
disclosure, the sealing member can be made thick, as well as the
body parts of the press-fit terminals can be kept freely
deformable, with the use of inner wall parts and recesses of the
case frame. Accordingly, reliable electrical insulation of the
semiconductor device and improved deformation tolerance of the
press-fit terminals are both achieved, while suppressing an
increase in the overall height dimension of the semiconductor
device.
Obviously many modifications and variations of the present
invention are possible in the light of the above teachings. It is
therefore to be understood that within the scope of the appended
claims the invention may be practiced otherwise than as
specifically described.
The entire disclosure of Japanese Patent Application No.
2017-193299, filed on Oct. 3, 2017 including specification, claims,
drawings and summary, on which the Convention priority of the
present application is based, is incorporated herein by reference
in its entirety.
* * * * *