U.S. patent number 10,348,990 [Application Number 15/303,828] was granted by the patent office on 2019-07-09 for light detecting device, solid-state image capturing apparatus, and method for manufacturing the same.
This patent grant is currently assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, SHARP KABUSHIKI KAISHA. The grantee listed for this patent is National Institute of Advanced Industrial Science and Technology, Sharp Kabushiki Kaisha. Invention is credited to Hitoshi Aoki, Toshio Fukai, Toshihisa Gotoh, Yoshinobu Kanazawa, Kohji Kobayashi, Yasushi Nagamune, Yoshimitsu Nakashima, Toshitaka Ota, Takashi Tokizaki, Toshio Yoshida.
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United States Patent |
10,348,990 |
Gotoh , et al. |
July 9, 2019 |
Light detecting device, solid-state image capturing apparatus, and
method for manufacturing the same
Abstract
A light detecting device includes: an optical filter (2) that
transmits a first wavelength light having a wavelength in a first
wavelength range, a second wavelength light having a wavelength in
a second wavelength range, . . . , and an n-th wavelength light
having a wavelength in an n-th wavelength range (n is an integer);
an optical sensor (3) that detects at least one of a first
wavelength light intensity of the first wavelength light, a second
wavelength light intensity of the second wavelength light, . . . ,
and an n-th wavelength light intensity of the n-th wavelength
light; and an analysis unit (4) that estimates a light intensity of
light having a wavelength in a wavelength range other than at least
one of the first wavelength range, the second wavelength range, . .
. , and the n-th wavelength range based on at least one of the
first wavelength light intensity, the second wavelength light
intensity, . . . , and the n-th wavelength light intensity. A
correlative relationship exists between a light intensity of light
having a wavelength in the at least one wavelength range and the
light intensity of the light having the wavelength in the
wavelength range other than the at least one wavelength range.
Inventors: |
Gotoh; Toshihisa (Sakai,
JP), Yoshida; Toshio (Sakai, JP), Kanazawa;
Yoshinobu (Sakai, JP), Nakashima; Yoshimitsu
(Sakai, JP), Kobayashi; Kohji (Sakai, JP),
Fukai; Toshio (Sakai, JP), Aoki; Hitoshi (Sakai,
JP), Nagamune; Yasushi (Tsukuba, JP),
Tokizaki; Takashi (Tsukuba, JP), Ota; Toshitaka
(Tsukuba, JP) |
Applicant: |
Name |
City |
State |
Country |
Type |
Sharp Kabushiki Kaisha
National Institute of Advanced Industrial Science and
Technology |
Sakai, Osaka
Chiyoda-ku, Tokyo |
N/A
N/A |
JP
JP |
|
|
Assignee: |
SHARP KABUSHIKI KAISHA (Sakai,
JP)
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND
TECHNOLOGY (Tokyo, JP)
|
Family
ID: |
54323864 |
Appl.
No.: |
15/303,828 |
Filed: |
March 23, 2015 |
PCT
Filed: |
March 23, 2015 |
PCT No.: |
PCT/JP2015/058772 |
371(c)(1),(2),(4) Date: |
October 13, 2016 |
PCT
Pub. No.: |
WO2015/159651 |
PCT
Pub. Date: |
October 22, 2015 |
Prior Publication Data
|
|
|
|
Document
Identifier |
Publication Date |
|
US 20170041560 A1 |
Feb 9, 2017 |
|
Foreign Application Priority Data
|
|
|
|
|
Apr 14, 2014 [JP] |
|
|
2014-083189 |
Dec 10, 2014 [JP] |
|
|
2014-250343 |
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
27/14 (20130101); G03B 11/00 (20130101); G01J
3/51 (20130101); H04N 5/33 (20130101); G02B
5/201 (20130101); H01L 27/14652 (20130101); H04N
9/07 (20130101); H01L 27/14621 (20130101); G02B
3/0006 (20130101); G01J 3/36 (20130101); G02B
5/20 (20130101); H04N 5/369 (20130101); G01J
3/2823 (20130101); G01J 3/2803 (20130101); G02B
5/208 (20130101); G01J 2003/1213 (20130101); G01J
2003/2806 (20130101) |
Current International
Class: |
H04N
5/369 (20110101); G01J 3/36 (20060101); G01J
3/51 (20060101); G02B 5/20 (20060101); G03B
11/00 (20060101); H01L 27/14 (20060101); H04N
5/33 (20060101); H04N 9/07 (20060101); G01J
3/28 (20060101); G02B 3/00 (20060101); H01L
27/146 (20060101); G01J 3/12 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
|
|
|
|
|
|
|
2006-140768 |
|
Jun 2006 |
|
JP |
|
4286123 |
|
Jun 2009 |
|
JP |
|
2011-050049 |
|
Mar 2011 |
|
JP |
|
2012-009983 |
|
Jan 2012 |
|
JP |
|
2013/172205 |
|
Nov 2013 |
|
WO |
|
2014/041742 |
|
Mar 2014 |
|
WO |
|
Other References
Official Communication issued in International Patent Application
No. PCT/JP2015/058772, dated May 26, 2015. cited by
applicant.
|
Primary Examiner: Ko; Tony
Attorney, Agent or Firm: Keating & Bennett, LLP
Claims
The invention claimed is:
1. A light detecting device comprising: a plurality of optical
filters each of which transmits a first wavelength light having a
wavelength in a first wavelength range, a second wavelength light
having a wavelength in a second wavelength range, . . . , and an
n-th wavelength light having a wavelength in an n-th wavelength
range (n is an integer), in light from an object; an optical sensor
that detects at least one of a first wavelength light intensity of
the first wavelength light, a second wavelength light intensity of
the second wavelength light, . . . , and an n-th wavelength light
intensity of the n-th wavelength light; and an analysis unit that
estimates a light intensity of light having a wavelength in a
wavelength range other than at least one of the first wavelength
range, the second wavelength range, . . . , and the n-th wavelength
range based on at least one of the first wavelength light
intensity, the second wavelength light intensity, . . . , and the
n-th wavelength light intensity detected by the optical sensor; and
a spacer member that is formed between the plurality of optical
filters, wherein a correlative relationship exists between a light
intensity of light having a wavelength in the at least one
wavelength range and the light intensity of the light having the
wavelength in the wavelength range other than the at least one
wavelength range.
Description
TECHNICAL FIELD
The present invention relates to a light detecting device, a
solid-state image capturing apparatus, and a method for
manufacturing the same using an object under a normal-illuminance
environment, a low-illuminance environment, an
extremely-low-illuminance environment, and a 0 lux environment as a
target.
BACKGROUND ART
In recent years, a high-sensitivity camera capable of performing
color imaging with visible light of an object under a
low-illuminance environment has been developed.
However, even when such a high-sensitivity camera is used, it is
not possible to perform color imaging with visible light of an
object under an extremely-low-illuminance environment where visible
light is almost absent, for example, at night, or under a
completely dark environment where visible light is absent, that is,
under a 0 lux environment.
Meanwhile, in imaging an object under such an
extremely-low-illuminance environment or 0 lux environment,
normally, an infrared camera is used, but in this case, since color
information is not obtained, monochrome imaging is performed.
Realization of an image sensor capable of performing color imaging
of an object under an extremely-low-illuminance environment or 0
lux environment such as an in-vehicle camera capable of clearly
reading a mark color or the like, or a security camera capable of
distinctly reading a color of clothes of a suspicious person, even
in the middle of night, is desired.
On the other hand, a color signal processing circuit has been
proposed (for example, see PTL 1). The color signal processing
circuit acquires a color signal and an infrared signal output from
a color image sensor that includes plural color component
photoelectric conversion elements that are respectively provided
with color filters that respectively transmit different color
components on a light receiving surface thereof and receive
incident light to selectively output color signals corresponding to
intensities of the different color components, and an infrared
component photoelectric conversion element that is provided with an
infrared component transmission filter that transmits an infrared
component on a light receiving surface thereof and selectively
outputs an infrared signal for correcting an infrared component
included in at least one of the plural color signals. The color
signal processing circuit controls at least two signal gains in the
color signals based on the infrared signal in order to perform
adjustment of white balance of the color signals.
Further, an image input device has been proposed (for example, see
PTL 2). The image input device includes a solid-state image sensor
that includes plural pixels that receive visible light and infrared
light from an object and convert the visible light and the infrared
light into a visible light signal and an infrared light signal,
respectively, storage means for storing correction data including a
correction value for each pixel of the solid-state image sensor
with respect to the visible light signal, correction means for
correcting the visible light signal output from the solid-state
image sensor based on the correction data stored in the storage
means, and formation means for calculating chrominance information
from the corrected visible light signal and calculating luminance
information from the corrected visible light signal and the
infrared light signal to form a color image signal, in which the
correction data is updated at a predetermined timing.
On the other hand, an image sensor has been proposed (for example,
see PTL 3). The image sensor includes a radiation unit, an imaging
unit, and a color specification setting unit, in which the
radiation unit radiates infrared light having different wavelength
intensity distributions to an object, the imaging unit captures an
image of the object based on the infrared light having the
different wavelength intensity distributions reflected from the
object to form image information expressing respective images, and
the color specification setting unit sets color specification
information for color-specifying the respective images expressed by
the formed image information with different monochromes for the
image information.
CITATION LIST
Patent Literature
PTL 1: Japanese Unexamined Patent Application Publication No.
4286123 (Jul. 7, 2005)
PTL 2: Japanese Unexamined Patent Application Publication No.
2012-009983 (Jan. 12, 2012)
PTL 3: Japanese Unexamined Patent Application Publication No.
2011-50049 (Mar. 10, 2011)
SUMMARY OF INVENTION
Technical Problem
However, the color signal processing circuit disclosed in PTL 1
corrects an infrared component included in a signal of the color
component photoelectric conversion element by using a signal of the
infrared component photoelectric conversion element, but imaging of
an object under an extremely-low-illuminance environment or 0 lux
environment is not possible, and thus, is different from an aspect
of the invention and an embodiment of the invention to be disclosed
later.
Further, since the image input device disclosed in PTL 2 cannot
sufficiently acquire a visible light signal, it is not possible to
perform imaging of an object under an extremely-low-illuminance
environment or 0 lux environment, and thus, is different from an
aspect of the invention and an embodiment of the invention to be
disclosed later.
Further, the image sensor disclosed in PTL 3 does not disclose
components and a method for manufacturing the components according
to an aspect of the invention and an embodiment of the
invention.
An object of the invention is to provide a light detecting device,
a solid-state image capturing apparatus, and a method for
manufacturing the same capable of performing color reproduction and
color imaging of an object under a normal-illuminance environment,
a low-illuminance environment, an extremely-low-illuminance
environment, and a 0 lux environment.
Solution to Problem
In order to solve the above-mentioned problems, a light detecting
device according to an aspect of the invention includes: an optical
filter that transmits a first wavelength light having a wavelength
in a first wavelength range, a second wavelength light having a
wavelength in a second wavelength range, . . . , and an n-th
wavelength light having a wavelength in an n-th wavelength range (n
is an integer), in light from an object; an optical sensor that
detects at least one of a first wavelength light intensity of the
first wavelength light, a second wavelength light intensity of the
second wavelength light, . . . , and an n-th wavelength light
intensity of the n-th wavelength light; and an analysis unit that
estimates a light intensity of light having a wavelength in a
wavelength range other than at least one of the first wavelength
range, the second wavelength range, . . . , and the n-th wavelength
range based on at least one of the first wavelength light
intensity, the second wavelength light intensity, . . . , and the
n-th wavelength light intensity detected by the optical sensor.
Here, a correlative relationship exists between a light intensity
of light having a wavelength in the at least one wavelength range
and the light intensity of the light having the wavelength in the
wavelength range other than the at least one wavelength range.
In order to solve the above-mentioned problems, another light
detecting device according to the aspect of the invention includes:
plural optical filters having different transmission wavelength
bands; and plural optical sensors that receive light respectively
passed through the plural optical filters. Here, each of the plural
optical filters is configured so that plural layered members having
a transmittance of 50% or greater in wavelength regions of visible
light and infrared light are layered, and the plural layered
members have the same or different refractive indexes,
respectively. Further, each of the plural optical filters reflects
light of a predetermined wavelength range in order to transmit
light of a different wavelength range, and the plural optical
filters are arranged in plan with a space or a spacer member being
interposed therebetween.
The other light detecting device according to the aspect of the
invention may further include plural lenses provided on a side
opposite to the plural optical sensors with respect to the plural
optical filters.
The other light detecting device according to the aspect of the
invention may further include plural lenses arranged between the
plural optical filters and the plural optical sensors.
The other light detecting device according to the aspect of the
invention may further include plural first lenses provided on a
side opposite to the plural optical sensors with respect to the
plural optical filters, and plural second lenses arranged between
the plural optical filters and the plural optical sensors.
In the light detecting device according to the aspect of the
invention, light from the object may be infrared light, and the
analysis unit may estimate a color, under visible light, of the
object that reflects the infrared light, based on at least one of
the first wavelength light intensity, the second wavelength light
intensity, . . . , and the n-th wavelength light intensity detected
by the optical sensors.
A light detecting device according to an aspect of the invention
may further include an analysis unit that estimates a color, under
visible light, of an object that reflects the infrared light, based
on at least one of the first wavelength light intensity, the second
wavelength light intensity, . . . , and the n-th wavelength light
intensity detected by the plural optical sensors.
In order to solve the above-mentioned problems, a solid-state image
capturing apparatus according to an aspect of the invention
includes a composite optical filter array that includes plural
composite optical filters and an optical sensor array in which
plural optical sensors are arranged. Here, each of the plural
composite optical filters includes plural optical filters having
different transmission wavelength bands, and each of the plural
optical filters transmits visible light having a predetermined
wavelength and infrared light having a predetermined wavelength.
Plural layered members having different refractive indexes are
layered in each of the plural optical filters, and the plural
optical sensors have sensitivity to the visible light and the
infrared light. The plural optical filters are regularly arranged
in plan, and the plural optical sensors are regularly arranged in
plan.
The solid-state image capturing apparatus according to the aspect
of the invention may further include a lens array that is arranged
on a side opposite to the optical sensor array with respect to the
composite optical filter array, and the plural lenses may be
regularly arranged in plan.
The solid-state image capturing apparatus according to the aspect
of the invention may further include a lens array that is disposed
between the composite optical filter array and the optical sensor
array and includes plural lenses, and the plural lenses may be
regularly arranged in plan to correspond to the plural optical
filters.
The solid-state image capturing apparatus according to the aspect
of the invention may further include a first lens array that is
arranged on a side opposite to the optical sensor array with
respect to the composite optical filter array and has plural first
lenses, and a second lens array that is arranged between the
composite optical filter array and the optical sensor array and has
plural second lenses, and the plural first and second lenses may be
regularly arranged in plan to correspond to the plural optical
filters.
The solid-state image capturing apparatus according to the aspect
of the invention, the optical filter may absorb visible light other
than the visible light having the predetermined wavelength and
infrared light other than the infrared light having the
predetermined wavelength, and thus, may transmit the visible light
having the predetermined wavelength and the infrared light having
the predetermined wavelength.
In the solid-state image capturing apparatus according to the
aspect of the invention, the optical filter may reflect visible
light other than the visible light having the predetermined
wavelength and infrared light other than the infrared light having
the predetermined wavelength, and thus, may transmit the visible
light having the predetermined wavelength and the infrared light
having the predetermined wavelength.
In the solid-state image capturing apparatus according to the
aspect of the invention, the layered member may include at least
one of an organic material and an inorganic material.
In the solid-state image capturing apparatus according to the
aspect of the invention, the stacked member may be a dielectric
substance.
In the solid-state image capturing apparatus according to the
aspect of the invention, the shape of the optical filter may be a
plate shape, a concave shape, a bowl shape, or a disk shape.
In the solid-state image capturing apparatus according to the
aspect of the invention, the shape of the plural layered members
may be a plate shape, a concave shape, a bowl shape, or a disk
shape.
In the solid-state image capturing apparatus according to the
aspect of the invention, the shape of the optical filter may be a
cube, a rectangle, a prism, a pyramid, a frustum, a cylinder, a
cone, a truncated cone, an elliptic cylinder, an elliptical cone,
an elliptical frustum, a drum shape or a barrel shape.
In the solid-state image capturing apparatus according to the
aspect of the invention, when a width is a size of the optical
filters along the plane on which the optical filters are arranged,
a length is a size of the optical filters along the plane, vertical
to the size along the plane, and a height is a size of the optical
filters vertical to the plane, the optical filters may have sizes
which are equal or close to each other in the width, the length,
and the height.
In the solid-state image capturing apparatus according to the
aspect of the invention, when a width is a size of the optical
filters along the plane on which the optical filters are arranged,
a length is a size of the optical filters along the plane, vertical
to the size along the plane, and a height is a size of the optical
filters vertical to the plane, the optical filters may be formed by
layering plural layered members having a size of a width of 10
micrometers or less, a length of 10 micrometers or less, and a
height of 1 micrometer or less and having different refractive
indexes.
In the solid-state image capturing apparatus according to the
aspect of the invention, a space may be formed between the plural
optical filters.
In the solid-state image capturing apparatus according to the
aspect of the invention, a spacer member may be formed between the
plural optical filters.
Another solid-state image capturing apparatus according to the
aspect of the invention includes a first composite optical filter
array, an optical sensor array, and a second composite optical
filter array that is disposed between the first composite optical
filter array and the optical sensor array or on a side opposite to
the optical sensor array with respect to the first composite
optical filter array. Here, the first composite optical filter
array includes plural first composite optical filters, and each of
the plural first composite optical filters include plural first
optical filters having different transmission wavelength bands. The
second composite optical filter array includes plural second
composite optical filters, and each of the plural second composite
optical filters includes plural second optical filters having
different transmission wavelength bands. Each of the plural optical
filters that form the plural first composite optical filters is
formed of an inorganic or organic material, and each of the plural
optical filters that form the plural second composite optical
filters is formed of an organic or inorganic material. The plural
respective optical filters that form the plural first composite
optical filters are regularly arranged in plan, and the plural
respective optical filters that form the plural second composite
optical filters are regularly arranged in plan so as to correspond
to the plural respective optical filters that form the plural first
composite optical filters. A combination of one optical filter
among the plural optical filters that form the plural first
composite optical filters and one optical filter among the plural
optical filters that form the plural second composite optical
filters corresponding to the one optical filter among the plural
optical filters that form the plural first composite optical
filters transmits visible light having a predetermined wavelength
and infrared light having a predetermined wavelength. The optical
sensor array includes plural optical sensors having sensitivity to
the visible light and the infrared light. The plural respective
optical sensors are regularly arranged in plan so as to correspond
to the plural optical filters. Here, the composite optical filters
may be formed of the same material.
In the solid-state image capturing apparatus according to the
aspect of the invention, the inorganic material may include silicon
oxide, silicon nitride, or titanium oxide.
In the other solid-state image capturing apparatus according to the
aspect of the invention, plural layered members having difference
refractive indexes may be layered in each of the plural first and
second optical filters.
In the other solid-state image capturing apparatus according to the
aspect of the invention, each of the plural first and second
optical filters may include plural high-refractive-index layers,
the high-refractive-index layer may be a layer formed by a layered
member having a highest refractive index in the wavelength regions
of the visible light and the infrared light among the plural
layered members formed in the plural respective first and the
second optical filters, and the plural respective
high-refractive-index layers may have different refractive
indexes.
In the other solid-state image capturing apparatus according to the
aspect of the invention, each of the plural first and second
optical filters may include plural low-refractive-index layers, the
low-refractive-index layer may be a layer formed by a layered
member having a lowest refractive index in the wavelength regions
of the visible light and the infrared light among the plural
layered members formed in the plural respective first and the
second optical filters, and the plural respective
low-refractive-index layers may have different refractive
indexes.
In the other solid-state image capturing apparatus according to the
aspect of the invention, each of the plural first and second
optical filters may include a lowermost layer, an uppermost layer,
a layer adjacent to the lowermost layer, and a layer adjacent to
the uppermost layer. Here, a ratio between a refractive index of
the lowermost layer and a refractive index of the layer adjacent to
the lowermost layer may be 85% or greater and 115% or less, and a
ratio between a refractive index of the uppermost layer and a
refractive index of a layer adjacent to the uppermost layer may be
85% or greater and 115% or less.
In order to solve the above-mentioned problems, still another
solid-state image capturing apparatus according to the aspect of
the invention includes a composite optical filter array that
includes plural composite optical filters, and an optical sensor
array in which plural optical sensors are arranged. Here, each of
the plural composite optical filters includes a first optical
filter that transmits light in a first wavelength range group, a
second optical filter that transmits light in a second wavelength
range group, . . . , and an n-th optical filter that transmits
light in an n-th wavelength range group (n is an integer). A k-th
wavelength range group (k is an integer that satisfies
1.ltoreq.k.ltoreq.n) includes a (k, 1) wavelength range, a (k, 2)
wavelength range, . . . , and a (k, m) wavelength range (m is an
integer). A correlative relationship exists between light
intensities of the respective (k, 1) wavelength range, the (k, 2)
wavelength range, . . . , and the (k, m) wavelength range. The
composite optical sensor includes a first optical sensor, a second
optical sensor, . . . , and an n-th optical sensor. A k-th optical
sensor detects at least one of the respective light intensities of
the (k, 1) wavelength range, the (k, 2) wavelength range, . . . ,
and the (k, m) wavelength range. The solid-state image capturing
apparatus further includes an analysis unit that estimates, from a
light intensity of light having a wavelength in the at least one
wavelength range, a light intensity of light having a wavelength in
a wavelength range other than the at least one wavelength range. A
correlative relationship exists between the light intensity of the
light having the wavelength in the at least one wavelength range
and the light intensity of the light having the wavelength in the
wavelength range other than the at least one wavelength range.
In the still other solid-state image capturing apparatus according
to the aspect of the invention, one of the first to n-th optical
filters may transmit red light having a red light wavelength
region, and infrared light having a wavelength region which is
closest to the red light wavelength region.
In the solid-state image capturing apparatus according to the
aspect of the invention, n may be 3, the (1, 1) wavelength range
may correspond to a red wavelength region, the (1, 2) wavelength
range may correspond to a first infrared wavelength region, the (2,
1) wavelength range may correspond to a blue wavelength region, the
(2, 2) wavelength range may correspond to a second infrared
wavelength region, the (3, 1) wavelength range may correspond to a
green wavelength region, and the (3, 2) wavelength range may
correspond to a third infrared wavelength region. Here, the second
infrared wavelength region may be positioned on a longer wavelength
side with respect to the first infrared wavelength region, and the
third infrared wavelength region may be positioned on a longer
wavelength side with respect to the second infrared wavelength
region.
In the solid-state image capturing apparatus according to the
aspect of the invention, n may be 3, the (1, 1) wavelength range
may include a blue wavelength region and a red wavelength region,
the (1, 2) wavelength range may include a first infrared wavelength
region and a second infrared wavelength region, the (2, 1)
wavelength range may include a green wavelength region and the blue
wavelength region, the (2, 2) wavelength range may include the
second infrared wavelength region and a third infrared wavelength
region, the (3, 1) wavelength range may include the red wavelength
region and the green wavelength region, and the (3, 2) wavelength
range may include the first infrared wavelength region and the
third infrared wavelength region. Here, the second infrared
wavelength region may be positioned on a longer wavelength side
with respect to the first infrared wavelength region, and the third
infrared wavelength region may be positioned on a longer wavelength
side with respect to the second infrared wavelength region.
In the solid-state image capturing apparatus according to the
aspect of the invention, n may be 3, the (1, 1) wavelength range
may include a red wavelength region, a green wavelength region, and
a blue wavelength region, the (1, 2) wavelength range may include a
first infrared wavelength region, a second infrared wavelength
region, and a third infrared wavelength region, the (2, 1)
wavelength range may include the red wavelength region, the (2, 2)
wavelength range may include the first infrared wavelength region,
the (3, 1) wavelength range may include the green wavelength
region, and the (3, 2) wavelength range may include the third
infrared wavelength. Here, the second infrared wavelength region
may be positioned on a longer wavelength side with respect to the
first infrared wavelength region, and the third infrared wavelength
region may be positioned on a longer wavelength side with respect
to the second infrared wavelength region.
In the solid-state image capturing apparatus according to the
aspect of the invention, n may be 3, the (1, 1) wavelength range
may include a red wavelength region, a green wavelength region, and
a blue wavelength region, the (1, 2) wavelength range may include a
first infrared wavelength region, a second infrared wavelength
region, and a third infrared wavelength region, the (2, 1)
wavelength range may include the green wavelength region, the (2,
2) wavelength range may include the third infrared wavelength
region, the (3, 1) wavelength range may include the blue wavelength
region, and the (3, 2) wavelength range may include the second
infrared wavelength region. Here, the second infrared wavelength
region may be positioned on a longer wavelength side with respect
to the first infrared wavelength region, and the third infrared
wavelength region may be positioned on a longer wavelength side
with respect to the second infrared wavelength region.
In the solid-state image capturing apparatus according to the
aspect of the invention, n may be 3, the (1, 1) wavelength range
may include a red wavelength region, a green wavelength region, and
a blue wavelength region, the (1, 2) wavelength range may include a
first infrared wavelength region, a second infrared wavelength
region, and a third infrared wavelength region, the (2, 1)
wavelength range may include the blue wavelength region, the (2, 2)
wavelength range may include the second infrared wavelength region,
the (3, 1) wavelength range may include the red wavelength region,
and the (3, 2) wavelength range may include the first infrared
wavelength. Here, the second infrared wavelength region may be
positioned on a longer wavelength side with respect to the first
infrared wavelength region, and the third infrared wavelength
region may be positioned on a longer wavelength side with respect
to the second infrared wavelength region.
In the solid-state image capturing apparatus according to the
aspect of the invention, n may be 3, the (1, 1) wavelength range
may include a red wavelength region, a green wavelength region, and
a blue wavelength region, the (1, 2) wavelength range may include a
first infrared wavelength region, a second infrared wavelength
region, and a third infrared wavelength region, the (2, 1)
wavelength range may include the green wavelength region and the
blue wavelength region, the (2, 2) wavelength range may include the
third infrared wavelength region and the second infrared wavelength
region, the (3, 1) wavelength range may include the blue wavelength
region and the red wavelength region, and the (3, 2) wavelength
range may include the second infrared wavelength region and the
first infrared wavelength region. Here, the second infrared
wavelength region may be positioned on a longer wavelength side
with respect to the first infrared wavelength region, and the third
infrared wavelength region may be positioned on a longer wavelength
side with respect to the second infrared wavelength region.
In the solid-state image capturing apparatus according to the
aspect of the invention, n may be 3, the (1, 1) wavelength range
may include a red wavelength region, a green wavelength region, and
a blue wavelength region, the (1, 2) wavelength range may include a
first infrared wavelength region, a second infrared wavelength
region, and a third infrared wavelength region, the (2, 1)
wavelength range may include the blue wavelength region and the red
wavelength region, the (2, 2) wavelength range may include the
second infrared wavelength region and the first infrared wavelength
region, the (3, 1) wavelength range may include the red wavelength
region and the green wavelength region, and the (3, 2) wavelength
range may include the first infrared wavelength region and the
third infrared wavelength region. Here, the second infrared
wavelength region may be positioned on a longer wavelength side
with respect to the first infrared wavelength region, and the third
infrared wavelength region may be positioned on a wavelength side
with respect to the second infrared wavelength region.
In the solid-state image capturing apparatus according to the
aspect of the invention, n may be 3, the (1, 1) wavelength range
may include a red wavelength region, a green wavelength region, and
a blue wavelength region, the (1, 2) wavelength range may include a
first infrared wavelength region, a second infrared wavelength
region, and a third infrared wavelength region, the (2, 1)
wavelength range may include the red wavelength region and the
green wavelength region, the (2, 2) wavelength range may include
the first infrared wavelength region and the third infrared
wavelength region, the (3, 1) wavelength range may include the
green wavelength region and the blue wavelength region, and the (3,
2) wavelength range may include the third infrared wavelength
region and the second infrared wavelength region. Here, the second
infrared wavelength region may be positioned on a longer wavelength
side with respect to the first infrared wavelength region, and the
third infrared wavelength region may be positioned on a longer
wavelength side with respect to the second infrared wavelength
region.
In the solid-state image capturing apparatus according to the
aspect of the invention, plural layered members having a
transmittance of 50% or more may be layered in space or in
wavelength regions of visible light and infrared light, in the
first optical filter.
In the solid-state image capturing apparatus according to the
aspect of the invention, the analysis unit may calculate the
intensity of light from an object having a wavelength of the blue
wavelength region and a wavelength of the second infrared
wavelength region based on the intensity of light that passes
through the first optical filter, the intensity of light that
passes through the second optical filter, and the intensity of
light that passes through the third optical filter.
In the solid-state image capturing apparatus according to the
aspect of the invention, the analysis unit may calculate the
intensity of light from an object having a wavelength of the red
wavelength region and a wavelength of the first infrared wavelength
region based on the intensity of light that passes through the
first optical filter, the intensity of light that passes through
the second optical filter, and the intensity of light that passes
through the third optical filter.
In the solid-state image capturing apparatus according to the
aspect of the invention, the analysis unit may calculate the
intensity of light from an object having a wavelength of the green
wavelength region and a wavelength of the third infrared wavelength
region based on the intensity of light that passes through the
first optical filter, the intensity of light that passes through
the second optical filter, and the intensity of light that passes
through the third optical filter.
In the solid-state image capturing apparatus according to the
aspect of the invention, the analysis unit may calculate the
intensity of light from an object having a wavelength of the red
wavelength region, a wavelength of the green wavelength region, a
wavelength of the first infrared wavelength region, and a
wavelength of the third infrared wavelength region based on the
intensity of light that passes through the first optical filter,
the intensity of light that passes through the second optical
filter, and the intensity of light that passes through the third
optical filter.
In the solid-state image capturing apparatus according to the
aspect of the invention, the analysis unit may calculate the
intensity of light from an object having a wavelength of the blue
wavelength region, a wavelength of the green wavelength region, a
wavelength of the third infrared wavelength region, and a
wavelength of the second infrared wavelength region based on the
intensity of light that passes through the first optical filter,
the intensity of light that passes through the second optical
filter, and the intensity of light that passes through the third
optical filter.
In the solid-state image capturing apparatus according to the
aspect of the invention, the analysis unit may calculate the
intensity of light from an object having a wavelength of the blue
wavelength region, a wavelength of the red wavelength region, a
wavelength of the second infrared wavelength region, and a
wavelength of the first infrared wavelength region based on the
intensity of light that passes through the first optical filter,
the intensity of light that passes through the second optical
filter, and the intensity of light that passes through the third
optical filter.
The solid-state image capturing apparatus according to the aspect
of the invention may further include a conversion unit that
performs color conversion using matrix calculation.
In the solid-state image capturing apparatus according to the
aspect of the invention, a refractive index of the
high-refractive-index layer that transmits light having a
wavelength of a blue wavelength region may be lower than a
refractive index of the high-refractive-index layer that transmits
light having a wavelength of a green wavelength region, and a
refractive index of the high-refractive-index layer that transmits
light having a wavelength of a red wavelength region.
In the solid-state image capturing apparatus according to the
aspect of the invention, plural layered members having different
thicknesses may be layered in each of the plural composite optical
filters.
In the solid-state image capturing apparatus according to the
aspect of the invention, any one of the optical filters, and the
first to n-th optical filters may include plural layered members of
which refractive indexes and thicknesses are (n.sub.1, d.sub.1),
(n.sub.2, d.sub.2), . . . , and (n.sub.i, d.sub.i), respectively,
and may transmit visible light in a predetermined wavelength region
and infrared light in a predetermined wavelength region by
appropriately setting respective values of (n.sub.1, d.sub.1),
(n.sub.2, d.sub.2), . . . , and (n.sub.i, d.sub.i) (i is an
integer).
In the solid-state image capturing apparatus according to the
aspect of the invention, the plural optical filters or the first to
n-th optical filters may include plural layered members of which
refractive indexes and thicknesses are (n.sup.1.sub.1,
d.sup.1.sub.1), (n.sup.1.sub.2, d.sup.1.sub.2), . . . , and
(n.sup.1.sub.i, d.sup.1.sub.i); (n.sup.1.sub.1, d.sup.1.sub.1),
(n.sup.2.sub.1, d.sup.2.sub.1), d.sup.2.sub.2), . . . , and
(n.sup.2.sub.i, d.sup.2.sub.i); . . . , and (n.sup.p.sub.1,
d.sup.p.sub.1), (n.sup.p.sub.2, d.sup.p.sub.2), . . . , and
(n.sup.p.sub.i, d.sup.p.sub.i), respectively, and may transmit
visible light in a predetermined wavelength region and infrared
light in a predetermined wavelength region by appropriately setting
respective values of (n.sup.1.sub.1, d.sup.1.sub.1),
(n.sup.1.sub.2, d.sup.1.sub.2), . . . , and (n.sup.1.sub.i,
d.sup.1.sub.i); (n.sup.2.sub.1, d.sup.2.sub.1), (n.sup.2.sub.2,
d.sup.2.sub.2), . . . , and (n.sup.2.sub.i, d.sup.2.sub.i); . . . ,
and (n.sup.p.sub.1, d.sup.p.sub.1), (n.sup.p.sub.2, d.sup.p.sub.2),
. . . , and (n.sup.p.sub.i, d.sup.p.sub.i) (p is an integer that
satisfies 1.ltoreq.p.ltoreq.n).
The solid-state image capturing apparatus according to the aspect
of the invention may further include an electromagnetic wave
radiation unit that radiates electromagnetic waves to an
object.
The solid-state image capturing apparatus according to the aspect
of the invention may further include an infrared radiation unit
that radiates infrared light to an object.
The solid-state image capturing apparatus according to the aspect
of the invention may further include a visible light radiation unit
that radiates visible light to an object.
The solid-state image capturing apparatus according to the aspect
of the invention may further include a visible light radiation unit
that radiates visible light to an object and an infrared radiation
unit that radiates infrared light to the object.
In the solid-state image capturing apparatus according to the
aspect of the invention, the infrared light is near infrared
light.
In the solid-state image capturing apparatus according to the
aspect of the invention, the spacer member may include an organic
material or an inorganic material.
In the solid-state image capturing apparatus according to the
aspect of the invention, the size of the spacer member may be 10
micrometers or less.
In the solid-state image capturing apparatus according to the
aspect of the invention, a size ratio of the optical filters to the
spacer member along a plane vertical to a transmission direction of
light with respect to the optical filters may be 0.5 or
greater.
In the solid-state image capturing apparatus according to the
aspect of the invention, a ratio, to the size of the optical
filters or the first to n-th optical filters along a plane vertical
to a transmission direction of light with respect to the optical
filters or the first to n-th optical filters, of the size of the
optical filters or the first to n-th optical filters along a
direction vertical to the plane may be 0.5 or greater.
In the solid-state image capturing apparatus according to the
aspect of the invention, a cycle at which the plural optical
filters are regularly arranged in plan, a cycle at which the plural
optical sensors are regularly arranged in plan, and a cycle at
which the plural lenses are regularly arranged in plan may be
different from each other.
In order to solve the above-mentioned problems, still another
solid-state image capturing apparatus according to the aspect of
the invention includes a composite optical filter array that
includes plural composite optical filters and an optical sensor
array in which plural optical sensors are arranged. Here, each of
the plural composite optical filters includes plural optical
filters having different transmission wavelength bands, and each of
the plural optical filters transmits ultraviolet light having a
predetermined wavelength, visible light having a predetermined
wavelength, and infrared light having a predetermined wavelength.
Each of the plural optical filters is formed by layering plural
layered members having different refractive indexes. The plural
optical sensors have sensitivity to the ultraviolet light, the
visible light, and the infrared light. The plural optical filters
are regularly arranged in plan, and the plural optical sensors are
regularly arranged in plan.
In order to solve the above-mentioned problems, a method for
manufacturing the solid-state image capturing apparatus according
to the aspect of the invention includes forming a first optical
sensor and a second optical sensor on a semiconductor substrate;
forming an insulating film on the semiconductor substrate to cover
the first optical sensor and the second optical sensor; forming a
first optical filter corresponding to the first optical sensor on
the insulating film; and forming a second optical filter
corresponding to the second optical sensor on the insulating film.
Here, the first optical filter and the second optical filter have
different transmission wavelength bands and transmit visible light
having a predetermined wavelength and infrared light having a
predetermined wavelength. Further, each of the first optical filter
and the second optical filter is formed by layering plural layered
members having different refractive indexes. The first and second
optical sensors have sensitivity to the visible light and the
infrared light.
Advantageous Effects of Invention
According to the present invention, it is possible to perform color
reproduction and color imaging of an object under a
normal-illuminance environment, a low-illuminance environment, an
extremely-low-illuminance environment, and a 0 lux environment.
Further, it is possible to provide a light detecting device, a
solid-state image capturing apparatus, and a method for
manufacturing the same capable of performing color reproduction or
forming a color image regardless of day and night. In addition, it
is possible to reduce weights and sizes of the devices, and thus,
it is possible to move the devices to all places, or to install the
devices in the all places. Thus, it is possible to use the devices
in various applications.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 is a diagram illustrating a configuration of a light
detecting device according to an embodiment of the invention and
the light detecting device that forms a solid-state image capturing
apparatus.
FIGS. 2(a) to 2(e) are diagrams illustrating optical filters of a
light detecting device and a solid-state image capturing apparatus
according to Embodiment 1 of the invention, and FIG. 2(f) is a
diagram illustrating a waveform of a light beam.
FIGS. 3(a) and 3(b) are diagrams illustrating a configuration of a
light detecting device according to Embodiment 2 of the invention,
and a configuration of the light detecting device that forms a
solid-state image capturing apparatus.
FIGS. 4(a) to 4(e) are diagrams illustrating an operation of a
space and a spacer member between optical filters that form the
light detecting device and the solid-state image capturing
apparatus according to Embodiment 2 of the invention.
FIGS. 5(a) to 5(e) are diagrams illustrating cases where an
operation of a space and a spacer member between the optical
filters that form the light detecting device and the solid-state
image capturing apparatus according to Embodiment 2 of the
invention is not present.
FIGS. 6(a) to 6(c) are diagrams illustrating installation examples
of optical filters that form a light detecting device and a
solid-state image capturing apparatus according to Embodiment 3 of
the invention.
FIGS. 7(a) to 7(c) are diagrams illustrating installation examples
of optical filters that form a light detecting device and a
solid-state image capturing apparatus according to Embodiment 4 of
the invention.
FIGS. 8(a) to 8(c) are diagrams illustrating installation examples
of optical filters that form a light detecting device and a
solid-state image capturing apparatus according to Embodiment 5 of
the invention.
FIGS. 9(a) to 9(c) are diagrams illustrating installation examples
of optical filters that form a light detecting device and a
solid-state image capturing apparatus according to Embodiment 6 of
the invention.
FIGS. 10(a) to 10(f) are diagrams illustrating installation
examples of optical filters that form a light detecting device and
a solid-state image capturing apparatus according to Embodiment 7
of the invention.
FIGS. 11(a) to 11(f) are diagrams illustrating installation
examples of optical filters that form a light detecting device and
a solid-state image capturing apparatus according to Embodiment 8
of the invention.
FIGS. 12(a) to 12(f) are diagrams illustrating installation
examples of optical filters that form a light detecting device and
a solid-state image capturing apparatus according to Embodiment 9
of the invention.
FIGS. 13(a) to 13(h) are diagrams illustrating wavelength
dependency of transmittances of optical filters that form the light
detecting devices and the solid-state image capturing apparatus
according to the invention.
FIG. 14 is a diagram illustrating a solid-state image capturing
apparatus according to Embodiment 10 of the invention.
FIG. 15 is a cross-sectional view of the solid-state image
capturing apparatus according to Embodiment 10.
FIG. 16(a) is a cross-sectional view of an inorganic film optical
filter unit according to Embodiment 10, and FIGS. 16(b) and 16(c)
are graphs illustrating wavelength dependency of intensities of
respective light beams that pass through optical filters.
FIGS. 17(a) to 17(g) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus according
to Embodiment 10.
FIG. 18 is a cross-sectional view illustrating a structure of an
inorganic film optical filter.
FIG. 19(a) is a diagram illustrating structures of a first optical
filter and a second optical filter, and FIG. 19(b) is an expression
of comparison of respective refractive indexes of
high-refractive-index layers.
FIG. 20(a) is a graph illustrating a refractive index of an
inorganic film optical filter, and FIG. 20(b) is a graph
illustrating wavelength dependency of an absorption coefficient of
the inorganic film optical filter.
FIG. 21(a) shows an example of refractive indexes and film
thicknesses of first to third optical filters, and FIG. 21(b) shows
wavelength dependency of transmittances of the optical filters.
FIG. 22 is a diagram illustrating a configuration of a solid-state
image capturing apparatus according to Embodiment 11 of the
invention.
FIG. 23 is a cross-sectional view of the solid-state image
capturing apparatus according to Embodiment 11.
FIGS. 24(a) and 24(b) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus according
to Embodiment 11.
FIG. 25 is a diagram illustrating a configuration of a solid-state
image capturing apparatus according to Embodiment 12 of the
invention.
FIG. 26 is a cross-sectional view illustrating the solid-state
image capturing apparatus according to Embodiment 12.
FIGS. 27(a) to 27(d) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus according
to Embodiment 12.
FIG. 28 is a diagram illustrating a configuration of a solid-state
image capturing apparatus according to Embodiment 13.
FIG. 29 is a cross-sectional view illustrating the solid-state
image capturing apparatus according to Embodiment 13.
FIGS. 30(a) and 30(b) are diagrams illustrating a method for
manufacturing a solid-state image capturing apparatus according to
Embodiment 13.
FIG. 31(a) is a diagram illustrating a configuration of a
solid-state image capturing apparatus according to Embodiment 14,
and FIG. 31(b) is a diagram illustrating a configuration of another
solid-state image capturing apparatus according to Embodiment
14.
FIG. 32 is a cross-sectional view illustrating the solid-state
image capturing apparatus according to Embodiment 14.
FIG. 33(a) is a graph illustrating wavelength dependency of a
transmittance of an organic film optical filter for obtaining a
second optical filter feature, FIG. 33(b) is a graph illustrating
wavelength dependency of a transmittance of an inorganic optical
filter, and FIG. 33(c) is a graph illustrating wavelength
dependency of a total transmittance.
FIGS. 34(a) to 34(c) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus according
to Embodiment 14.
FIG. 35 is a cross-sectional view of the solid-state image
capturing apparatus according to Embodiment 14.
FIG. 36(a) is a graph illustrating wavelength dependency of a
transmittance of an organic film optical filter for obtaining a
third optical filter feature, FIG. 36(b) is a graph illustrating
wavelength dependency of a transmittance of an inorganic optical
filter, and FIG. 36(c) is a graph illustrating wavelength
dependency of a total transmittance.
FIG. 37 is a cross-sectional view of the solid-state image
capturing apparatus according to Embodiment 14.
FIG. 38(a) is a graph illustrating wavelength dependency of a
transmittance of an organic film optical filter for obtaining a
first optical filter feature, FIG. 38(b) is a graph illustrating
wavelength dependency of a transmittance of an inorganic optical
filter, and FIG. 38(c) is a graph illustrating wavelength
dependency of a total transmittance.
FIG. 39 is a cross-sectional view of a solid-state image capturing
apparatus according to Embodiment 15.
FIGS. 40(a) to 40(f) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus according
to Embodiment 15.
FIGS. 41(a) and 41(b) are color photos based on visible light and
infrared radiation, captured by the solid-state image capturing
apparatus of the invention.
DESCRIPTION OF EMBODIMENTS
Hereinafter, embodiments of the invention will be described.
Embodiment 1
Configuration of Light Detecting Device
FIG. 1 is a diagram illustrating a configuration of a light
detecting device 1 according to Embodiment 1. The light detecting
device 1 includes an optical filter 2. The optical filter 2
transmits a first wavelength light having a first wavelength range,
a second wavelength light having a second wavelength range, . . . ,
and an n-th wavelength light (n is an integer) having an n-th
wavelength range in a light beam L1 which is incident from an
object. A light beam L2 includes the first wavelength light, the
second wavelength light, . . . , and the n-th wavelength light. An
optical sensor 3 is provided in the light detecting device 1. The
optical sensor 3 detects, as information T, at least one of a first
wavelength light intensity of the first wavelength light, a second
wavelength light intensity of the second wavelength light, . . . ,
and an n-th wavelength light intensity of the n-th wavelength
light. A correlative relationship exists between the first
wavelength light intensity, the second wavelength light intensity,
. . . , and the n-th wavelength light intensity.
Further, the light detecting device 1 includes an analysis unit 4.
The analysis unit 4 estimates a light intensity of light having a
wavelength in a wavelength range other than at least one of the
first wavelength range, the second wavelength range, . . . , and
the n-th wavelength range based on at least one of the first
wavelength light intensity, the second wavelength light intensity,
. . . , and the n-th wavelength light intensity detected by the
optical sensor 3.
(Specific Process of Analysis Unit 4)
In FIG. 1, the light beam L1 represents light from an object or a
target. The light from the object or the target includes light
reflected by the object or the target, light emitted from the
object or the target, light that has passed through the object or
the target, a combination thereof, or the like.
In a case where an object or a target is illuminated, ultraviolet
light, visible light, and infrared light may be respectively
included in illumination light at specific wavelength intensity
distributions in the daytime when sunlight is strong. Further, at
night when sunlight is not present, a wavelength intensity
distribution of artificial illumination light is obtained. The
artificial illumination light generally includes white
illumination, infrared illumination, or the like. The white
illumination includes incandescent lamp illumination, fluorescent
lamp illumination, LED illumination, or the like, and may further
include infrared light.
Hereinafter, a case where the light beam L1 is light reflected by
an object or a target will be described.
For example, in a case where the object or the target reflects an
m-th wavelength light having a wavelength of an m-th wavelength
range and an n-th wavelength light having a wavelength of an n-th
wavelength range at a specific intensity or a specific wavelength
intensity distribution, respectively, it can be said that a
correlative relationship exists between an m-th wavelength light
intensity or a wavelength intensity distribution of the m-th
wavelength light reflected by the object or the target and an n-th
wavelength light intensity or a wavelength intensity distribution
of the n-th wavelength light reflected by the object or the target.
Here, m and n are integers, respectively.
Here, for example, the optical filter 2 is set to transmit the m-th
wavelength light in the m-th wavelength light range and the n-th
wavelength light in the n-th wavelength light range, and the
optical sensor 3 is set to detect the m-th wavelength light in the
m-th wavelength light range and the n-th wavelength light in the
n-th wavelength light range.
Further, here, in a case where only the n-th wavelength light is
included in illumination light, only the n-th wavelength light is
included in the light beam L1 which is light reflected from the
object or the target. Accordingly, only the n-th wavelength light
is included in the light beam L2, and thus, the optical sensor 3
detects only the n-th wavelength light intensity.
Further, even if the m-th wavelength light intensity is not
included in the light beam L1, the analysis unit 4 may estimate the
m-th wavelength light intensity of the m-th wavelength light
reflected by the object or the target based on the correlative
relationship, using information T relating to the n-th wavelength
light intensity obtained by the optical sensor 3.
Contrarily, in a case where only the m-th wavelength light is
included in the illumination light, the m-th wavelength light is
included in the light beam L1 which is the light reflected from the
object or the target. Accordingly, only the m-th wavelength light
is included in the light beam L2, and thus, the optical sensor 3
detects only the m-th wavelength light intensity.
Further, even if the n-th wavelength light intensity is not
included in the light beam L1, the analysis unit 4 may estimate the
n-th wavelength light intensity of the n-th wavelength light
intensity reflected by the object or the target based on the
correlative relationship, using information T relating to the m-th
wavelength light intensity obtained by the optical sensor 3.
The description is applied to a case where the object or the target
reflects the m-th wavelength light and the n-th wavelength light at
specific intensities, respectively, the light beam L1 is formed by
the n-th wavelength light or the m-th wavelength light, and the
optical sensor 2 transmits the m-th wavelength light and the n-th
wavelength light; however, for example, the description may be
applied to a case where the object or the target reflects the first
to n-th wavelength light at specific intensity distributions.
Generally speaking in consideration of these cases, it can be said
that the analysis unit 4 may estimate a light intensity of light
reflected by the object or the target, having a wavelength range
other than at least one of the first wavelength range, the second
wavelength range, . . . , and the n-th wavelength range on the
basis of at least one of the first wavelength light intensity, the
second wavelength light intensity, . . . , and the n-th wavelength
light intensity detected by the optical sensor 3.
The light reflected by the object or the target may be compatibly
expressed as light from the object or the target such as light
emitted from the object or the target, light that has passed
through the object or the target, or a combination thereof.
It is preferable that information relating to a light wavelength
intensity distribution included in the light beam L1 is input or
set in advance in the analysis unit 4.
It is preferable that a long-wavelength cut filter, a
shot-wavelength cut filter, a band pass filter, a dummy filter or
an ND filter is provided in the optical filter 2 on the side of the
light beam L1 and the information is input or set in the analysis
unit 4.
It is preferable that the solid-state image capturing apparatus
according to this embodiment includes the light detecting device
1.
If the light detecting device 1 is configured to perform scanning
on a plane, for example, to perform raster scanning or the like, it
is possible to cause the light detecting device 1 to function as
the solid-state image capturing apparatus according to this
embodiment. Further, in this case, a wavelength of a light source
may be changed for every scanning.
(Configuration of Optical Filter 2)
FIGS. 2(a) to 2(e) are diagrams illustrating the optical filter 2
of the light detecting device 1 according to Embodiment 1, and FIG.
2(f) is a diagram illustrating a waveform of a light source.
The optical filter 2 may be formed by plural different layered
members S1 to S6. In FIG. 2, a case where the number of layers of
the layered members is 6 is shown, but the invention is not limited
thereto, and an arbitrary number of layers may be set as described
later.
Further, in order to enhance an optical resolution of the optical
filter 2, as shown in FIG. 2(a) to FIG. 2(e), it is necessary to
narrow the width of the optical filter 2. Further, if the width of
the optical filter 2 is of the same order as that of the wavelength
of a waveform W of the light beam L1 shown in FIG. 2(f), or is
several times or approximately the same as the wavelength of the
waveform W, it is not possible to ignore a phenomenon that a part
of the light beam L1 that is incident to the optical filter 2 is
leaked through a side surface of the optical filter 2 (see FIG. 5
to be described later).
Embodiment 2
Configuration of Light Detecting Devices 1a and 1h
FIGS. 3(a) and 3(b) are diagrams illustrating configurations of
light detecting devices 1a and 1h according to Embodiment 2.
The light detecting device 1a shown in FIG. 3(a) includes a
composite optical filter 5a and an optical sensor array 6. The
composite optical filter 5a includes optical filters 2a to 2d which
are arranged in 2 rows and 2 columns, to which a light beam L3 is
incident. Plural layered members having a transmittance of 50% or
more are layered in wavelength regions of visible light and
infrared light, in each of the optical filters 2a to 2d.
The optical filter 2a transmits a first wavelength light having a
wavelength in a first wavelength range by reflecting light having
wavelengths other than the first wavelength range in light from an
object. The optical filter 2b transmits a second wavelength light
having a wavelength in a second wavelength range by reflecting
light having wavelengths other than the second wavelength range in
light from an object. The optical filter 2c transmits a third
wavelength light having a wavelength in a third wavelength range by
reflecting light having wavelengths other than the third wavelength
range in light from an object. The optical filter 2d transmits a
fourth wavelength light having a wavelength in a fourth wavelength
range by reflecting light having wavelengths other than the fourth
wavelength range in light from an object.
Each of the optical filters 2a to 2d may reflect light in a
predetermined wavelength range to transmit light in a different
wavelength range. Here, the light in the different wavelength range
may not coincide with light having wavelengths other than the
predetermined wavelength range. Further, the different wavelength
range may overlap the predetermined wavelength range.
In order to prevent occurrence of interaction or crosstalk between
light beams leaked from respective side surfaces of the optical
filters 2a to 2d, a space SP is formed between the optical filters
2a to 2d.
The optical sensor array 6 includes optical sensors 3a to 3d
arranged corresponding to the optical filters 2a to 2d,
respectively. The optical sensor 3a detects a first wavelength
light intensity of a first wavelength light that has passed through
the optical filter 2a. The optical sensor 3b detects a second
wavelength light intensity of a second wavelength light that has
passed through the optical filter 2b. The optical sensor 3c detects
a third wavelength light intensity of a third wavelength light that
has passed through the optical filter 2c. The optical sensor 3d
detects a fourth wavelength light intensity of a fourth wavelength
light that has passed through the optical filter 2d.
In the light detecting device 1h shown in FIG. 3(b), in order to
prevent occurrence of interaction or crosstalk between light beams
leaked from respective side surfaces of the optical filters 2a to
2d, a spacer member 7 is formed between the optical filters 2a to
2d. Other configurations are the same as the configurations of the
light detecting device 1a in FIG. 3(a).
FIGS. 4(a) to 4(e) and FIGS. 5(a) to 5(e) are diagrams illustrating
an operation of a space and a spacer member between optical filters
that form the light detecting device and the solid-state image
capturing apparatus according to Embodiment 2. FIG. 4 is a diagram
conceptually illustrating a wavelength of the light beam L3 with
respect to a cross-sectional view of a composite optical filter 5b
taken along section AA shown in FIG. 6(a) to be described
later.
As shown in waveforms W1 to W5 shown in FIG. 4, it is possible to
prevent the light beam L3 in the optical filter 2a from being
leaked toward the adjacent optical filters 2b and 2c using the
spacer member 7. Thus, it is possible to easily control a light
beam that is reflected from or passes through each of the optical
filters 2a to 2d.
On the other hand, as shown in FIG. 5, in a case where the optical
filters 2a to 2d are provided without using the space SP and the
spacer member 7, as shown in the waveforms W1 to W5 shown in FIG.
5, light beams in the optical filter 2a are leaked toward the
adjacent optical filters 2b and 2c, and the respective light beams
cause interaction or crosstalk. Thus, it is difficult to control a
light beam that is reflected from or passes through each of the
optical filters 2a to 2d.
It is preferable that the solid-state image capturing apparatus
according to this embodiment includes the light detecting device 1a
or 1h.
If the light detecting device 1a or the light detecting device 1h
is configured to perform scanning on a plane, for example, to
perform raster scanning or the like, it is possible to cause the
light detecting device 1a or 1h to function as the solid-state
image capturing apparatus according to this embodiment.
Embodiment 3
Arrangement Example of Optical Filters
FIGS. 6(a) to 6(c) are diagrams illustrating installation examples
of optical filters that form a light detecting device and a
solid-state image capturing apparatus according to Embodiment 3 of
the invention.
Referring to FIG. 6(a), a composite optical filter 5b includes
square-shaped optical filters 2a to 2d arranged in two rows and two
columns, and a spacer member 7a formed between the optical filters
2a to 2d.
Referring to FIG. 6(b), a composite optical filter 5c includes
square-shaped optical filters 2b and 2d, a rectangular-shaped
optical filter 2e, and a spacer member 7b formed between the
optical filters 2b, 2d, and 2e.
Referring to FIG. 6(c), a composite optical filter 5d includes
diamond-shaped optical filters 2f, 2g, and 2h, and a spacer member
7c formed between the optical filters 2f, 2g, and 2h.
Embodiment 4
Another Arrangement Example of Optical Filters
FIGS. 7(a) to 7(c) are diagrams illustrating installation examples
of optical filters that form a light detecting device and a
solid-state image capturing apparatus according to Embodiment 4.
Referring to FIG. 7(a), a composite optical filter 5e includes four
circular optical filters 2i to 2l, and a spacer member 7d formed
between the optical filters 2i to 2l.
Referring to FIG. 7(b), a composite optical filter 5f includes two
circular optical filters 2n and 2o, a racetrack-shaped optical
filter 2m, and a spacer member 7 formed between the optical filters
2n, 2o, and 2m.
Referring to FIG. 7(c), a composite optical filter 5g includes
three elliptical optical filters 2p, 2q, and 2r, and a spacer
member 7f formed between the optical filters 2p, 2q, and 2r.
Embodiment 5
Still Another Arrangement Example of Optical Filters
FIGS. 8(a) to 8(c) are diagrams illustrating installation examples
of optical filters that form a light detecting device and a
solid-state image capturing apparatus according to Embodiment 5. In
the composite optical filter 5b, the optical filters 2a to 2d of a
square shape are arranged in two rows and two columns with the
spacer member 7a being interposed therebetween.
Referring to FIG. 8(a), an optical filter 2a transmits a "green
wavelength region (G)" and a "third infrared wavelength region
(IR3)", optical filters 2b and 2c transmit a "red wavelength region
(R)" and a "first infrared wavelength region (IR1)", and optical
filter 2d transmits a "blue wavelength region (B)" and a "second
infrared wavelength region (IR2)".
Here, in the infrared wavelength regions, "the first infrared
wavelength region (IR1)", "the second infrared wavelength region
(IR2)", and "the third infrared wavelength region (IR3)" represent
a shorter wavelength region in the order, and this is similarly
applied hereinafter.
Referring to FIG. 8(b), the optical filter 2a transmits the "blue
wavelength region (B)" and the "second infrared wavelength region
(IR2)", the optical filters 2b and 2c transmit the "green
wavelength region (G)" and the "third infrared wavelength region
(IR3)", and optical filter 2d transmits the "red wavelength region
(R)" and the "first infrared wavelength region (IR1)".
Referring to FIG. 8(c), the optical filter 2a transmits the "red
wavelength region (R)" and the "first infrared wavelength region
(IR1)", the optical filters 2b and 2c transmit the "blue wavelength
region (B)" and the "second infrared wavelength region (IR2)", and
optical filter 2d transmits the "green wavelength region (G)" and
the "third infrared wavelength region (IR3)".
The intensity of visible light having a wavelength of the "red
wavelength region (R)" that passes through each of the filters 2a
to 2d is represented as R, the intensity of visible light having a
wavelength of the "green wavelength region (G)" is represented as
G, the intensity of visible light having a wavelength of the "blue
wavelength region (B)" is represented as B, the intensity of
infrared light having a wavelength of the "first infrared
wavelength region (IR1)" is represented as IR1, the intensity of
infrared light having a wavelength of the "second infrared
wavelength region (IR2)" is represented as IR2, and the intensity
of infrared light having a wavelength of the "third infrared
wavelength region (IR3)" is represented as IR3. Hereinafter,
similarly, a0(R+IR1) detected by each of the optical sensors 3a to
3d may be color-specified as "R" of the three primary colors,
b0(G+IR3) detected by each of the optical sensors 3a to 3d may be
color-specified as "G" of the three primary colors, and c0(B+IR2)
detected by each of the optical sensors 3a to 3d may be
color-specified as "B" of the three primary colors.
Here, a0, b0, and c0 represent coefficients, and may be
appropriately adjusted according to detection rates of the
respective optical sensors 3a to 3d.
Embodiment 6
Configuration Example of Optical Filters
FIGS. 9(a) to 9(c) are diagrams illustrating installation examples
of optical filters that form a light detecting device and a
solid-state image capturing apparatus (light detecting device)
according to Embodiment 6. Referring to FIG. 9(a), an optical
filter 2a transmits an "M wavelength region", a "first infrared
wavelength region (IR1)", and a "second infrared wavelength region
(IR2)", optical filters 2b and 2c transmit a "C wavelength region",
the "second infrared wavelength region (IR2)", and a "third
infrared wavelength region (IR3)", and an optical filter 2d
transmits a "Y wavelength region", the "third infrared wavelength
region (IR3)", and the "first infrared wavelength region
(IR1)".
Here, a "C wavelength region" represents the "green wavelength
region (G)" and the "blue wavelength region (B)", an "M wavelength
region" represents the "blue wavelength region (B)" and the "red
wavelength region (R)", and a "Y wavelength region" represents the
"red wavelength region (R)" and the "green wavelength region (G)".
This is similarly applied hereinafter.
Referring to FIG. 9(b), the optical filter 2a transmits the "Y
wavelength region", the "third infrared wavelength region (IR3)",
and the "first infrared wavelength region (IR1)", the optical
filters 2b and 2c transmit the "M wavelength region", the "first
infrared wavelength region (IR1)", and the "second infrared
wavelength region (IR2)", and the optical filter 2d transmits the
"C wavelength region", the "second infrared wavelength region
(IR2)", and the "third infrared wavelength region (IR3)".
Referring to FIG. 9(c), the optical filter 2a transmits the "C
wavelength region", the "second infrared wavelength region (IR2)",
and the "third infrared wavelength region (IR3)", the optical
filters 2b and 2c transmit the "Y wavelength region", the "third
infrared wavelength region (IR3)", and the "first infrared
wavelength region (IR1)", and the optical filter 2d transmits the
"M wavelength region", the "first infrared wavelength region
(IR1)", and the "second infrared wavelength region (IR2)".
In addition to the above-mentioned combinations, other combinations
using the "red wavelength region (R)", the "green wavelength region
(G)", the "blue wavelength region (B)", the "C wavelength region",
the "M wavelength region", the "Y wavelength region", the "first
infrared wavelength region (IR1)", the "second infrared wavelength
region (IR2)", or the "third infrared wavelength region (IR3) may
be used.
The intensity of visible light having a wavelength of the "C
wavelength region" that passes through each of the filters 2a to 2d
is represented as C, the intensity of visible light having a
wavelength of the "M wavelength region" that passes through each of
the filters 2a to 2d is represented as M, and the intensity of
visible light having a wavelength of the "Y wavelength region" that
passes through each of the filters 2a to 2d is represented as Y.
Hereinafter, similarly, a02(C+IR2+IR3) detected by each of the
optical sensors 3a to 3d may be color-specified as "C" of the three
primary colors, b02(M+IR1+IR2) detected by each of the optical
sensors 3a to 3d may be color-specified as "M" of the three primary
colors, and c02(Y+IR1+IR3) detected by each of the optical sensors
3a to 3d may be color-specified as "Y" of the three primary
colors.
Here, a02, b02, and c02 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters 2a to 2d, detection rates of the
respective optical sensors 3a to 3d, or the like.
The intensity of visible light in the "red wavelength region (R)",
the "green wavelength region (G)", and the "blue wavelength region
(B)" from an object is represented as W0, and the intensity of
infrared having a wavelength of the "first infrared wavelength
region (IR1)", the "second infrared wavelength region (IR2)", and
the "third infrared wavelength region (IR3)" from the object is
represented as IR0. Hereinafter, similarly, conversion is made by
R+IR1=d0(W0+IR0)-a02(C+IR2+IR3)={-a02(C+IR2+IR3)+b02(M+IR1+IR2)+c02(Y+IR1-
+IR3)}/2 (1),
G+IR3=d0(W0+IR0)-b02(M+IR1+IR2)={a02(C+IR2+IR3)-b02(M+IR1+IR2)+c02(Y+IR1+-
IR3)}/2 (2), and
B+IR2=d0(W0+IR0)-c02(Y+IR1+IR3)={a02(C+IR2+IR3)+b02(M+IR1+IR2)-c02(Y+IR1+-
IR3)}/2 (3). Thus, a03(R+IR1) may be color-specified as "R" of the
three primary colors, b03(G+IR3) may be color-specified as "G" of
the three primary colors, and c03(B+IR2) may be color-specified as
"B" of the three primary colors.
That is, it is possible to convert CMY color system information
into RGB color system information. Here, a03, b03, c03, and d0
represent coefficients, and may be appropriately adjusted.
Embodiment 7
Configuration Example of Optical Filters
FIGS. 10(a) to 10(f) are diagrams illustrating installation
examples of optical filters that form a light detecting device and
a solid-state image capturing apparatus according to Embodiment 7.
Referring to FIG. 10(a), an optical filter 2a transmits a "W
wavelength region" and an "infrared wavelength region (IR)",
optical filters 2b and 2c transmit a "red wavelength region (R)"
and a "first infrared wavelength region (IR1)", and an optical
filter 2d transmits a "green wavelength region (G)" and a "third
infrared wavelength region (IR3)".
Here, the "W wavelength region" represents the "red wavelength
region (R)" and the "green wavelength region (G)", and the "blue
wavelength region (B)", and the "IR wavelength region" represents
the "first infrared wavelength region (IR1)", the "second infrared
wavelength region (IR2)", and the "third infrared wavelength region
(IR3)". This is similarly applied hereinafter.
The intensity of visible light in the "red wavelength region (R)",
the "green wavelength region (G)", and the "blue wavelength region
(B)" that pass through each of the optical filters 2a to 2d is
represented as W, and the intensity of infrared light having a
wavelength of the "first infrared wavelength region (IR1)", the
"second infrared wavelength region (IR2)", and the "third infrared
wavelength region (IR3)" that pass through each of the optical
filters 2a to 2d is represented as IR. Hereinafter, similarly, the
light intensity of the "blue wavelength region (B)" and the "second
infrared wavelength region (IR2)" from an object may be calculated
from Expression (4) or the like, for example.
B+IR2=a1(W+IR)-2b1(R+IR1)-c1(G+IR3) (4)
Further, a1, b1, and c1 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters 2a to 2d, detection rates of the
respective optical sensors 3a to 3d, or the like.
Referring to FIG. 10(b), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "green wavelength region
(G)" and the "third infrared wavelength region (IR3)", and the
optical filter 2d transmits the "blue wavelength region (B)" and
the "second infrared wavelength region (IR2)".
The light intensity of the "red wavelength region (R)" and the
"first infrared wavelength region (IR1)" from an object may be
calculated from Expression (5) or the like, for example.
R+IR1=a2(W+IR)-2b2(G+IR3)-c2(B+IR2) (5)
Here, a2, b2, and c2 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters 2a to 2d, detection rates of the
respective optical sensors 3a to 3d, or the like.
Referring to FIG. 10(c), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "blue wavelength region (B)"
and the "second infrared wavelength region (IR2)", and the optical
filter 2d transmits the "red wavelength region (R)" and the "first
infrared wavelength region (IR1)".
The light intensity of the "green wavelength region (G)" and the
"third infrared wavelength region (IR3)" from an object may be
calculated from Expression (6) or the like, for example.
G+IR3=a3(W+IR)-2b3(B+IR2)-c3(R+IR1) (6)
Here, a3, b3, and c3 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Referring to FIG. 10(d), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "red wavelength region (R)"
and the "first infrared wavelength region (IR1)", and the optical
filter 2d transmits the "blue wavelength region (B)" and the
"second infrared wavelength region (IR2)".
The light intensity of the "green wavelength region (G)" and the
"third infrared wavelength region (IR3)" from an object may be
calculated from Expression (7) or the like, for example.
G+IR3=a4(W+IR)-2b4(R+IR1)-c4(B+IR2) (7)
Here, a4, b4, and c4 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Referring to FIG. 10(e), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "green wavelength region
(G)" and the "third infrared wavelength region (IR3)", and the
optical filter 2d transmits the "red wavelength region (R)" and the
"first infrared wavelength region (IR1)".
Here, the light intensity of the "blue wavelength region (B)" and
the "second infrared wavelength region (IR2)" from an object may be
calculated from Expression (8) or the like, for example.
B+IR2=a5(W+IR)-2b5(G+IR3)-c5(R+IR1) (8)
Here, a5, b5, and c5 represent coefficients, and may be
appropriately calculated according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Referring to FIG. 10(f), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "blue wavelength region (B)"
and the "second infrared wavelength region (IR2)", and the optical
filter 2d transmits the "green wavelength region (G)" and the
"third infrared wavelength region (IR3)".
Here, the light intensity of the "red wavelength region (R)" and
the "first infrared wavelength region (IR1)" from an object may be
calculated from Expression (9) or the like, for example.
R+IR1=a6(W+IR)-2b6(B+IR2)-c6(G+IR3) (9)
Here, a6, b6, and c6 represent coefficients, and may be
appropriately calculated according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Embodiment 8
Still Another Configuration Example of Optical Filters
FIGS. 11(a) to 11(f) are diagrams illustrating installation
examples of optical filters that form a light detecting device and
a solid-state image capturing apparatus according to Embodiment 8.
Here, in the composite optical filter 5b, the optical filters 2a to
2d are arranged with the spacer member 7a being interposed
therebetween.
Referring to FIG. 11(a), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "C wavelength region", the
"second infrared wavelength region (IR2)", and the "third infrared
wavelength region (IR3)", and the optical filter 2d transmits the
"M wavelength region", the "first infrared wavelength region (IR1)"
and the "second infrared wavelength region (IR2)".
The light intensity of the "Y wavelength region", the "first
infrared wavelength region (IR1)", and the "third infrared
wavelength region (IR3)" from an object may be calculated from
Expression (10) or the like, for example.
Y+IR1+IR3=a7(W+IR)-2b7(C+IR2+IR3)-c7(M+IR1+IR2) (10)
Here, a7, b7, and c7 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Here, a20(C+IR2+IR3) detected by each of the optical sensors may be
color-specified as "C" of the three primary colors, b20(M+IR1+IR2)
detected by each of the optical sensors may be color-specified as
"M" of the three primary colors, and c20(Y+IR1+IR3) detected by
each of the optical sensors may be color-specified as "Y" of the
three primary colors, with respect to Y+IR1+IR3 obtained from the
above-mentioned calculation. Here, a20, b20, and c20 represent
coefficients, and may be appropriately adjusted.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
Referring to FIG. 11(b), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "M wavelength region", the
"first infrared wavelength region (IR1)", and the "second infrared
wavelength region (IR2)", and the optical filter 2d transmits the
"Y wavelength region", the "third infrared wavelength region
(IR3)", and the "first infrared wavelength region (IR1)".
The light intensity of the "C wavelength region", the "second
infrared wavelength region (IR2)", and the "third infrared
wavelength region (IR3)" from an object may be calculated from
Expression (11) or the like, for example.
C+IR2+IR3=a8(W+IR)-2b8(M+IR1+IR2)-c8(Y+IR1+IR3) (11)
Here, a8, b8, and c8 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
Here, b21(M+IR1+IR2) detected by each of the optical sensors may be
color-specified as "M" of the three primary colors, c21(Y+IR1+IR3)
detected by each of the optical sensors may be color-specified as
"Y" of the three primary colors, and a21(C+IR2+IR3) detected by
each of the optical sensors may be color-specified as "C" of the
three primary colors, with respect to the C+IR2+IR3 obtained from
the above-mentioned calculation. Here, a21, b21, and c21 represent
coefficients, and may be appropriately adjusted.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
Referring to FIG. 11(c), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "Y wavelength region", the
"third infrared wavelength region (IR3)", and the "first infrared
wavelength region (IR1)", and the optical filter 2d transmits the
"C wavelength region", the "second infrared wavelength region
(IR2)", and the "third infrared wavelength region (IR3)".
The light intensity of the "M wavelength region", the "IR1
wavelength region", and the "IR2 wavelength region" from an object
may be calculated from Expression (12) or the like, for example.
M+IR1+IR2=a9(W+IR)-2b9(Y+IR1+IR3)-c9(C+IR2+IR3) (12)
Here, a9, b9, and c9 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
Here, c22(Y+IR1+IR3) detected by each of the optical sensors may be
color-specified as "Y" of the three primary colors, a22(C+IR2+IR3)
detected by each of the optical sensors may be color-specified as
"C" of the three primary colors, and b22(M+IR1+IR2) detected by
each of the optical sensors may be color-specified as "M" of the
three primary colors, with respect to the M+IR1+IR2 obtained from
the above-mentioned calculation. Here, a22, b22, and c22 represent
coefficients, and may be appropriately adjusted.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
Referring to FIG. 11(d), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "C wavelength region", the
"second infrared wavelength region (IR2)", and the "third infrared
wavelength region (IR3)", and the optical filter 2d transmits the
"Y wavelength region", the "third infrared wavelength region
(IR3)", and the "first infrared wavelength region (IR1)".
The light intensity of the "M wavelength region", the "first
infrared wavelength region (IR1)", and the "second infrared
wavelength region (IR2)" from an object may be calculated from
Expression (13) or the like, for example.
M+IR1+IR2=a10(W+IR)-2b10(C+IR2+IR3)-c10(Y+IR1+IR3) (13)
Here, a10, b10, and c10 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Here, a23(C+IR2+IR3) detected by each of the optical sensors may be
color-specified as "C" of the three primary colors, c23(Y+IR1+IR3)
detected by each of the optical sensors may be color-specified as
"Y" of the three primary colors, and b23(M+IR1+IR2) detected by
each of the optical sensors may be color-specified as "M" of the
three primary colors, with respect to the M+IR1+IR2 obtained from
the above-mentioned calculation. Here, a23, b23, and c23 represent
coefficients, and may be appropriately adjusted.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
Referring to FIG. 11(e), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "M wavelength region", the
"first infrared wavelength region (IR1)", and the "second infrared
wavelength region (IR2)", and the optical filter 2d transmits the
"C wavelength region", the "second infrared wavelength region
(IR2)", and the "third infrared wavelength region (IR3)".
The light intensity of the "Y wavelength region", the "first
infrared wavelength region (IR1)", and the "third infrared
wavelength region (IR3)" from an object may be calculated from
Expression (14) or the like, for example.
Y+IR1+IR3=a11(W+IR)-2b11(M+IR1+IR2)-c11(C+IR2+IR3) (14)
Here, a11, b11, and c11 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Here, b24(M+IR1+IR2) detected by each of the optical sensors may be
color-specified as "M" of the three primary colors, a24(C+IR2+IR3)
detected by each of the optical sensors may be color-specified as
"C" of the three primary colors, and c24(Y+IR1+IR3) detected by
each of the optical sensors may be color-specified as "Y" of the
three primary colors, with respect to the Y+IR1+IR3 obtained from
the above-mentioned calculation. Here, a24, b24, and c24 represent
coefficients, and may be appropriately adjusted.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
Referring to FIG. 11(f), the optical filter 2a transmits the "W
wavelength region" and the "infrared wavelength region (IR)", the
optical filters 2b and 2c transmit the "Y wavelength region", the
"third infrared wavelength region (IR3)", and the "first infrared
wavelength region (IR1)", and the optical filter 2d transmits the
"M wavelength region", the "first infrared wavelength region
(IR1)", and the "second infrared wavelength region (IR2)".
The light intensity of the "C wavelength region", the "second
infrared wavelength region (IR2)", and the "third infrared
wavelength region (IR3)" from an object may be calculated from
Expression (15) or the like, for example.
C+IR2+IR3=a12(W+IR)-2b12(Y+IR1+IR3)-c12(M+IR1+IR2) (15)
Here, a12, b12, and c12 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Here, c25(Y+IR1+IR3) detected by each of the optical sensors may be
color-specified as "Y" of the three primary colors, b25(M+IR1+IR2)
detected by each of the optical sensors may be color-specified as
"M" of the three primary colors, and a25(C+IR2+IR3) detected by
each of the optical sensors may be color-specified as "C" of the
three primary colors. Here, a25, b25, and c25 represent
coefficients, and may be appropriately adjusted.
Similarly, it is possible to convert the CMY color system
information to the RGB color system information.
Embodiment 9
Still Another Configuration Example of Optical Filters
FIGS. 12(a) to 12(f) are diagrams illustrating installation
examples of optical filters that form a light detecting device and
a solid-state image capturing apparatus according to Embodiment 9.
Here, in the composite optical filter 5b, the optical filters 2a to
2d are arranged with the spacer member 7a being interposed
therebetween.
Referring to FIG. 12(a), the optical filters 2a and 2d transmit the
"W wavelength region" and the "infrared wavelength region (IR)",
the optical filter 2b transmits the "red wavelength region (R)" and
the "first infrared wavelength region (IR1)", and the optical
filter 2c transmits the "green wavelength region (G)" and the
"third infrared wavelength region (IR3)".
The light intensity of the "blue wavelength region (B)" and the
"second infrared wavelength region (IR2)" from an object may be
calculated from Expression (16) or the like, for example.
B+IR2=2a13(W+IR)-b13(R+IR1)-c13(G+IR3) (16)
Here, a13, b13, and c13 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Referring to FIG. 12(b), the optical filters 2a and 2d transmit the
"W wavelength region" and the "infrared wavelength region (IR)",
the optical filter 2b transmits the "green wavelength region (G)"
and the "third infrared wavelength region (IR3)", and the optical
filter 2c transmits the "blue wavelength region (B)" and the
"second infrared wavelength region (IR2)".
The light intensity of the "red wavelength region (R)" and the
"first infrared wavelength region (IR1)" from an object may be
calculated from Expression (17) or the like, for example.
R+IR1=2a14(W+IR)-b14(G+IR3)-c14(B+IR2) (17)
Here, a14, b14, and c14 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Referring to FIG. 12(c), the optical filters 2a and 2d transmit the
"W wavelength region" and the "infrared wavelength region (IR)",
the optical filter 2b transmits the "blue wavelength region (B)"
and the "second infrared wavelength region (IR2)", and the optical
filter 2c transmits the "red wavelength region (R)" and the "first
infrared wavelength region (IR1)".
The light intensity of the "green wavelength region (G)" and the
"third infrared wavelength region (IR3)" from an object may be
calculated from Expression (18) or the like, for example.
G+IR3=2a15(W+IR)-b15(B+IR2)-c15(R+IR1) (18)
Here, a15, b15, and c15 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Referring to FIG. 12(d), the optical filters 2a and 2d transmit the
"W wavelength region" and the "infrared wavelength region (IR)",
the optical filter 2b transmits the "C wavelength region", the
"second infrared wavelength region (IR2)", and the "third infrared
wavelength region (IR3)", and the optical filter 2c transmits the
"M wavelength region", the "first infrared wavelength region
(IR1)", and the "second infrared wavelength region (IR2)".
The light intensity of the "Y wavelength region", the "first
infrared wavelength region (IR1), and the "third infrared
wavelength region (IR3)" from an object may be calculated from
Expression (19) or the like, for example.
Y+IR1+IR3=2a16(W+IR)-b16(C+IR2+IR3)-c16(M+IR1+IR2) (19)
Here, a16, b16, and c16 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Similarly, it is possible to convert the CMY color system
information to the RGB color system information.
Referring to FIG. 12(e), the optical filters 2a and 2d transmit the
"W wavelength region" and the "infrared wavelength region (IR)",
the optical filter 2b transmits the "M wavelength region", the
"first infrared wavelength region (IR1)", and the "second infrared
wavelength region (IR2)", and the optical filter 2c transmits the
"Y wavelength region", the "first infrared wavelength region (IR1),
and the "third infrared wavelength region (IR3)".
The light intensity of the "C wavelength region", the "second
infrared wavelength region (IR2)", and the "third infrared
wavelength region (IR3)" from an object may be calculated from
Expression (20) or the like, for example.
C+IR2+IR3=2a17(W+IR)-b17(M+IR1+IR2)-c17(Y+IR1+IR3) (20)
Here, a17, b17, and c17 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
Referring to FIG. 12(f), the optical filters 2a and 2d transmit the
"W wavelength region" and the "infrared wavelength region (IR)",
the optical filter 2b transmits the "Y wavelength region", the
"first infrared wavelength region (IR1)", and the "third infrared
wavelength region (IR3)", and the optical filter 2c transmits the
"C wavelength region", the "second infrared wavelength region
(IR2)", and the "third infrared wavelength region (IR3)".
The light intensity of the "M wavelength region", the "first
infrared wavelength region (IR1)", and the "second infrared
wavelength region (IR2)" from an object may be calculated from
Expression (21) or the like, for example.
M+IR1+IR2=2a18(W+IR)-b18(Y+IR1+IR3)-c18(C+IR2+IR3) (21)
Here, a18, b18, and c18 represent coefficients, and may be
appropriately adjusted according to transmittances of the
respective optical filters, detection rates of the respective
optical sensors, or the like.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
In addition to the above-mentioned combinations, other combinations
using the "red wavelength region (R)", the "green wavelength region
(G)", the "blue wavelength region (B)", the "C wavelength region",
the "M wavelength region", the "Y wavelength region", the "first
infrared wavelength region (IR1)", the "second infrared wavelength
region (IR2)", or the "third infrared wavelength region (IR3) may
be used.
The number of combinations obtained by selecting four or the three
regions from the "red wavelength region (R)" and the "first
infrared wavelength region (IR1)", the "green wavelength region
(G)" and the "third infrared wavelength region (IR3)", the "blue
wavelength region (B)" and the "second infrared wavelength region
(IR2)", the "C wavelength region", the "second infrared wavelength
region (IR2)" and the "third infrared wavelength region (IR3)", the
"M wavelength region", the "first infrared wavelength region (IR1)"
and the "second infrared wavelength region (IR2)", and the "Y
wavelength region", the "first infrared wavelength region (IR1)"
and the "third infrared wavelength region (IR3)" and by allocating
the result to four regions, including the above-mentioned
combinations, is about 140. Further, in consideration of
differences between positions in the four regions, the number of
combinations may be larger. It is possible to convert their color
systems into the RGB color system, the CMY color system, or the
like, respectively.
In addition to the above-mentioned combinations, other combinations
using other primary colors or colors may be used.
Similarly, it is possible to convert the CMY color system
information into the RGB color system information.
Contrarily, it is possible to convert the RGB color system
information into the CMY color system information.
W+IR may be replaced with 1 or the like in basic calculation, may
be replaced with 255 or the like in digital calculation with 8
bits, may be replaced with 1023 or the like in digital calculation
with 10 bits, may be replaced with (2.sup.14)-1 or the like in
digital calculation with 14 bits, or may be replaced with
(2.sup.16)-1 or the like in digital calculation with 16 bits. This
is similarly applied to other bit numbers.
The color specification may be adjustment of hue, brightness
(lightness or value), contrast (chroma or saturation), natural
vibrance, color balance, color elements, gamma correction, or the
like.
FIGS. 13(a) to 13(h) are diagrams illustrating wavelength
dependency of transmittances of optical filters that form a light
detecting device and a solid-state image capturing apparatus
according to this embodiment. In FIG. 13, specific examples of
wavelength dependency of transmittances in combinations of
representative optical filters. FIG. 13(a) corresponds to RGB, FIG.
13(b) corresponds to CMY, FIG. 13(c) corresponds to RGW, FIG. 13(d)
corresponds to GBW, FIG. 13(e) corresponds to RBW, FIG. 13(f)
corresponds to CMW, FIG. 13(g) corresponds to MYW, and FIG. 13(h)
corresponds to YCW.
Embodiment 10
Configuration of Solid-State Image Capturing Apparatus 1b
FIG. 14 is a diagram illustrating a configuration of a solid-state
image capturing apparatus 1b according to Embodiment 10. The
solid-state imaging capturing apparatus 1b includes a composite
optical filter array 8a and an optical sensor array 6a. The
composite optical filter array 8a includes plural composite optical
filters 5a which are regularly arranged in a matrix form. Optical
filters 2a to 2d which are arranged in two rows and two columns and
have different transmission wavelength bands are formed in each
composite optical filter 5a. A spacer member 7 is formed between
the optical filters 2a to 2d. The optical filters 2a to 2d transmit
visible light having a predetermined wavelength and visible light
having a predetermined wavelength. Plural layered members having
different refractive indexes are layered in each of the optical
filters 2a to 2d.
Further, the optical sensor array 6a includes plural optical
sensors 3a to 3d which are regularly arranged in a matrix form to
correspond to the optical filters 2a to 2d. The optical sensor 3a
detects visible light having a predetermined wavelength and
infrared light having a predetermined wavelength that have passed
through the optical filter 2a. The optical filter 3b detects
visible light having a predetermined wavelength and infrared light
having a predetermined wavelength that have passed through the
optical filter 2b. The optical filter 3c detects visible light
having a predetermined wavelength and infrared light having a
predetermined wavelength that have passed through the optical
filter 2c. The optical filter 3d detects visible light having a
predetermined wavelength and infrared light having a predetermined
wavelength that have passed through the optical filter 2d.
FIG. 15 is a cross-sectional view of the solid-state image
capturing apparatus 1b according to Embodiment 10. As shown in FIG.
15, the solid-state image sensor 1b according to Embodiment 10
includes a semiconductor substrate 11. A photoelectric conversion
unit 12 and a charge transfer unit 13 are formed on the
semiconductor substrate 11. The photoelectric conversion unit 12
and the charge transfer unit 13 correspond to the optical sensor
array 6a. A transfer electrode 14 and a light shielding film 15 are
formed on the semiconductor substrate 11 with an insulating film
being interposed therebetween. An insulating film 16 is formed on
the light shielding film 15. An inorganic film optical filter 17 is
formed on the insulating film 16. A spacer film 21 is formed on the
inorganic film optical filter 17. Here, an example in which the
spacer film 21 is integrated with the spacer member is shown, and
this may be similarly applied hereinafter.
In the example of FIG. 15, the inorganic film optical filter 17
includes a first optical filter 18, a second optical filter 19, and
a third optical filter 20, and corresponds to the composite optical
filter 8a.
The example of FIG. 15 may be applied to the light detecting device
according to this embodiment.
FIG. 16(a) is a cross-sectional view of an inorganic film optical
filter unit according to Embodiment 10, and FIGS. 16(b) and 16(c)
are graphs illustrating wavelength dependency of intensities of
respective light beams that transmit a color filter. In the figure,
an example in which incident light passes through the first optical
filter 18, the second optical filter 19, and the third optical
filter 20, and thus, first light beams, second light beams, and
third light beams respectively exit from the first optical filter
18, the second optical filter 19, and the third optical filter 20
is shown. The first optical filter 18, the second optical filter
19, and the third optical filter 20 are configured so that the
first light beams, the second light beams, and the third light
beams have wavelength spectrums as shown in FIG. 16(b). With
respect to the first light beams, the first optical filter 18 may
be configured so that the first light beams have a spectrum in
which visible light R and first infrared light are connected to
each other as shown in FIG. 16(c).
FIGS. 17(a) to 17(g) are cross-sectional diagrams illustrating a
method for manufacturing the solid-state image capturing apparatus
1b according to Embodiment 10. Examples of FIGS. 17(a) to 17(g) may
be applied to a method for manufacturing the light detecting device
according to this embodiment.
First, as shown in FIG. 17(a), the photoelectric conversion unit 12
and the charge transfer unit 13 are formed using ion injection so
as to be exposed on a front surface of the semiconductor substrate
11 formed of silicon. Further, an insulating film (not shown) which
is a silicon oxide film of a thickness of 100 nm to 3000 nm, for
example, is formed on the front surface of the semiconductor
substrate 11 using silicon thermal oxidation or a chemical vapor
deposition (CVD) method. Then, for example, a polysilicon film is
deposited at a thickness of about 50 nm to 300 nm using a CVD
method. Then, n-type impurities such as phosphor are introduced
using thermal diffusion or ion injection.
Thereafter, the transfer electrode 14 is formed using anisotropic
etching, using a photoresist which is patterned in a predetermined
pattern as a mask, based on a photolithography technique. Then, an
insulating film (not shown) is formed by deposition of an oxidation
film based on polysilicon oxidation or a CVD method. For example,
an antireflection coat (not shown) is formed by depositing a
silicon nitride film and performing anisotropic etching with
respect to the silicon nitride film using a photoresist patterned
in a predetermined pattern as a mask.
Then, tungsten or the like which is a material of a light shielding
film is deposited, and the light shielding film 15 is formed using
a photolithography technique. Further, the insulating film 16 which
is a silicon oxide film is formed using a CVD method. The
insulating film 16 may be flattened using CMP or etching.
Next, the first optical filter 18 is formed on the insulating film
16. The first optical filter is formed by an inorganic multilayer
film, and is formed by alternately layering a low-refractive-index
material and a high-refractive-index material. Specifically, a
silicon oxide film SiO.sub.2 is used as the low-refractive-index
material, and a silicon nitride film SiN or a titanium oxide film
TiO.sub.2 is used as the high-refractive-index material. The
multilayer film may be formed using a CVD method, or may be formed
using a deposition method or a sputtering method.
Then, as shown in FIG. 17(b), the first optical filter 18 is etched
using a photoresist (not shown) patterned in a predetermined
pattern as a mask, based on a photolithography technique, to form a
predetermined pattern.
Then, as shown in FIG. 17(c), the second optical filter 19 is
formed using a CVD method or the like.
Then, as shown in FIG. 17(d), the second optical filter 19 is
etched using a photoresist (not shown) patterned in a predetermined
pattern as a mask, based on a photolithography technique, to form a
predetermined pattern.
Then, as shown in FIG. 17(e), the third optical filter 20 is formed
using a CVD method or the like.
Then, as shown in FIG. 17(f), the third optical filter 20 is etched
using a photoresist (not shown) patterned in a predetermined
pattern as a mask, based on a photolithography technique, to form a
predetermined pattern.
In the above-mentioned examples, the formation of the optical
filters is performed in the order of the first optical filter 18,
the second optical filter 19, and the third optical filter 20, but
the invention is not limited thereto. The formation order of the
three optical filters may be arbitrarily set.
Then, as shown in FIG. 17(g), the spacer film 21 is formed. The
spacer film 21 is formed by coating of a silicon oxide film
SiO.sub.2 using a spin-on-glass (SOG) method or by coating of an
acrylic material.
FIG. 18 is a cross-sectional view illustrating a structure of an
inorganic film optical filter 17. Low-refractive-index materials
and high-refractive-index materials of a multilayer film
corresponding to plural layered members are alternately arranged in
the order of L0, H1, L1, H2, L2, . . . , Hj-1, Lj-1, Hj, and Lj
from the top, respectively. Refractive indexes of the
low-refractive-index materials and the high-refractive-index
materials are respectively represented as nL0, nH1, nL1, nH2, nL2,
. . . , nHj-1, nLj-1, nHj, and nLj, and film thicknesses of the
low-refractive-index materials and high-refractive-index materials
are respectively represented as dL0, dH1, dL1, dH2, dL2, . . . ,
dHj-1, dLj-1, dHj, and dLj.
The refractive indexes and the film thicknesses of the
low-refractive-index materials and high-refractive-index materials
are set so that the inorganic film optical filter 17 (the first
optical filter 18, the second optical filter 19, and the third
optical filter 20) has a filter characteristic having transmission
bands in wavelength regions of visible light and infrared light as
shown in FIG. 16(b) or FIG. 16(c).
FIG. 19(a) is a diagram illustrating structures of the first
optical filter 18 and the second optical filter 19, and FIG. 19(b)
is an expression of comparison of refractive indexes of respective
high-refractive-index layers. A refractive index of a
high-refractive-index layer of the first optical filter 18 is
higher than a refractive index of a high-refractive-index layer of
the second optical filter 19. As a specific example, the refractive
index of the high-refractive-index layer of the first optical
filter 18 is set as 2.3 to 2.8, and the refractive index of the
high-refractive-index layer of the second optical filter 19 is set
as 1.8 to 2.3.
FIG. 20(a) is a graph illustrating a refractive index of the
inorganic film optical filter 17, and FIG. 20(b) is a graph
illustrating wavelength dependency of an absorption coefficient of
the inorganic film optical filter 17. Curve G1 represents a
refractive index of a high-refractive-index layer n.sub.H:18 of the
first optical filter 18, curve G2 represents a refractive index of
a high-refractive-index layer n.sub.H:19 of the second optical
filter 19, curve G3 represents an absorption coefficient of the
high-refractive-index layer n.sub.H:18 of the first optical filter
18, and curve G4 represents an absorption coefficient of the
high-refractive-index layer n.sub.H:19 of the second optical filter
19.
If the refractive indexes increase as shown in FIGS. 20(a) and
20(b), the absorption coefficients increase and the refractive
indexes decrease. Particularly, this is noticeable in a short
wavelength region. For example, in a case where the optical filter
is configured to transmit a wavelength region of purple to blue of
400 nm to 500 nm, for example, it is possible to prevent reduction
in a transmittance by using a material having a low refractive
index. In a case where the filter does not need to transmit a short
wavelength region, since when a refractive index of a
high-refractive-index member is high, it is possible to make the
entire film thickness thin, it is preferable to use a
high-refractive-index material. That is, by differentiating
refractive indexes of high-refractive-index layers at respective
pixels, it is possible to obtain optimal spectroscopy.
FIG. 21(a) is a diagram illustrating an example of refractive
indexes and film thicknesses of the first to third optical filters
18 to 20, and FIG. 21(b) shows wavelength dependency of
transmittances of the optical filters. As shown in FIG. 21, by
setting a proper refractive index and a proper film thickness for
each pixel, it is possible to form optical filters that transmit a
visible light region and an infrared light region. Refractive
indexes (2.2) of high-refractive-index materials H1 to H8 of the
second optical filter 19 and refractive indexes (2.2) of
high-refractive-index materials H1 to H4 of the third optical
filter 20 are lower than refractive indexes (2.5) of
high-refractive-index materials H1 to H4 of the first optical
filter 18. Combinations of the film thicknesses and refractive
indexes are not limited thereto, and the number of layers may
increase or decrease, or an arbitrary film thickness and an
arbitrary refractive index may be selected for each layer.
Embodiment 11
Configuration of Solid-State Image Capturing Apparatus 1c
FIG. 22 is a diagram illustrating a configuration of a solid-state
image capturing apparatus 1c according to Embodiment 11. The same
reference numerals are given to the same components as the
components described in FIG. 14, and detailed description thereof
will not be repeated. The solid-state image capturing apparatus 1c
is different from the solid-state image capturing apparatus 1b
shown in FIG. 14 in that a lens array 9a is provided on a side
opposite to the optical sensor array 6a with respect to the
composite optical filter array 8a. The lens array 9a includes
plural lenses which are regularly arranged in plan to correspond to
the optical filters 2a to 2d.
FIG. 23 is a cross-sectional view of the solid-state image
capturing apparatus 1c. The same reference numerals are given to
the same components as the components described in FIG. 15, and
detailed description thereof will not be repeated. The solid-state
image capturing apparatus 1c is different from the solid-state
image capturing apparatus 1b shown in FIG. 15 in that a
concentrating lens 22 is formed on a spacer film 21. The
concentrating lens 22 corresponds to the lens array 9a.
In the example of FIG. 23, the inorganic film optical filter 17
includes the first optical filter 18, the second optical filter 19,
and the third optical filter 20.
In the example of FIG. 23, a light beam L4 from an object is
concentrated by the concentrating lens 22, passes through the
second optical filter 19, and enters the photoelectric conversion
unit 12. Thus, it is possible to enhance sensitivity of the
photoelectric conversion unit 12 by a concentration effect based on
the concentrating lens 22. Further, by performing concentration
using the concentrating lens 22 at a central portion of the second
optical filter 19 where a filter film thickness is stable, it is
possible to reduce variation in transmission characteristics of the
second optical filter 19, and to reduce light leakage to adjacent
cells. Thus, it is possible to enhance color separation. The
example of the second optical filter 19 is shown, but this is
similarly applied to the first optical filter 18 and the third
optical filter 20.
The example of FIG. 23 may be applied to a light detecting device
according to this embodiment.
FIGS. 24(a) and 24(b) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus 1c
according to Embodiment 11. FIG. 24(a) is a cross-sectional view
after the inorganic film optical filter 17 and the spacer film 21
are formed, in which the manufacturing method employs the same
processes as those of FIGS. 17(a) to 17(g) in Embodiment 10. Then,
as shown in FIG. 24(b), acryl is formed thereon, and then, is
etched so that a photoresist (not shown) shape patterned in a
predetermined shape is transferred, to thereby form the
concentrating lens 22.
The example of FIGS. 24(a) and 24(b) may be applied to a method for
manufacturing a light detecting device according to this
embodiment.
Embodiment 12
Configuration of Solid-State Image Capturing Apparatus 1d
FIG. 25 is a diagram illustrating a solid-state image capturing
apparatus 1d according to Embodiment 12. The same reference
numerals are given to the same components as the components
described in FIG. 22, and detailed description thereof will not be
repeated. The solid-state image capturing apparatus 1d is different
from the solid-state image capturing apparatus 1c shown in FIG. 22
in that the lens array 9a is provided between the composite optical
filter array 8a and the optical sensor array 6a. The lens array 9a
includes plural lenses which are regularly arranged in plan to
correspond to the optical filters 2a to 2d.
FIG. 26 is a cross-sectional view of the solid-state image
capturing apparatus 1d. The same reference numerals are given to
the same components as the components described in FIG. 15, and
detailed description thereof will not be repeated. The solid-state
image capturing apparatus 1d is different from the solid-state
image capturing apparatus 1b shown in FIG. 15 in that a
concentrating lens 27 is formed on the insulating film 16. The
concentrating lens 27 corresponds to the lens array 9a.
In the example of FIG. 26, the inorganic film optical filter 17
includes the first optical filter 18, the second optical filter 19,
and the third optical filter 20.
In the example of FIG. 26, a light beam L4 from an object passes
through the second optical filter 19, is concentrated by the
concentrating lens 27, and enters the photoelectric conversion unit
12. Thus, it is possible to enhance sensitivity of the
photoelectric conversion unit 12 by a concentration effect based on
the concentrating lens 27. The example of the second optical filter
19 is shown, but this is similarly applied to the first optical
filter 18 and the third optical filter 20.
The example of FIG. 26 may be applied to a light detecting device
according to this embodiment.
FIGS. 27(a) and 27(d) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus 1d
according to Embodiment 12. First, as shown in FIG. 27(a), the
photoelectric conversion unit 12 and the charge transfer unit 13
are formed using ion injection so as to be exposed on a front
surface of the semiconductor substrate 11 formed of silicon.
Further, an insulating film (not shown) which is a silicon oxide
film of a thickness of 100 nm to 3000 nm, for example, is formed on
the front surface of the semiconductor substrate 11 using silicon
thermal oxidation or a CVD method.
Then, for example, a polysilicon film is deposited at a thickness
of about 50 nm to 300 nm using a CVD method. Then, n-type
impurities such as phosphor are introduced using thermal diffusion
or ion injection. Thereafter, the transfer electrode 14 is formed
using anisotropic etching, using a photoresist which is patterned
in a predetermined pattern as a mask, based on a photolithography
technique.
Then, an insulating film (not shown) is formed by deposition of an
oxidation film based on polysilicon oxidation or a CVD method. For
example, an antireflection coat (not shown) is formed by depositing
a silicon nitride film and performing anisotropic etching with
respect to the silicon nitride film using a photoresist patterned
in a predetermined pattern as a mask.
Then, tungsten or the like which is a material of a light shielding
film is deposited, and the light shielding film 15 is formed using
a photolithography technique. Further, the insulating film 16 which
is a silicon oxide film is formed using a CVD method. An embedding
shape of the insulating film 16 formed using the CVD method is a
downwardly convex shape between the transfer electrodes 14, as
shown in FIG. 27(a).
Then, as shown in FIG. 27(b), for example, a silicon nitride film
28 is formed using a CVD method, for example. Then, as shown in
FIG. 27(c), the concentrating lens 27 is formed using an etching
method or a chemical mechanical planarization (CMP) method.
Further, as shown in FIG. 27(d), the first optical filter 18, the
second optical filter 19, and the third optical filter 20 are
sequentially formed using the same method as in FIGS. 17(a) to
17(g).
The formation of the optical filters is not limited to the method
performed in the order of the first optical filter 18, the second
optical filter 19, and the third optical filter 20, and the
formation order of the three optical filters may be arbitrarily
set.
In FIG. 27(c), the concentrating lens 27 is formed using the
etching method or the CMP method, but it is possible to obtain the
same lens effect as in the concentrating lens 27 even when the
shape of FIG. 27(b) is maintained as it is. By performing etching,
a distance between the semiconductor substrate 11, and the first
optical filter 18, the second optical filter 19 and the third
optical filter 20 is reduced, and thus, the sensitivity is
enhanced.
The examples of FIGS. 27(a) to 27(d) may be applied to a method for
manufacturing the light detecting device according to this
embodiment.
Embodiment 13
(Configuration of Solid-State Image Capturing Apparatus 1e
FIG. 28 is a diagram illustrating a configuration of a solid-state
image capturing apparatus 1e according to Embodiment 13. The same
reference numerals are given to the same components as the
components described in FIG. 22, and detailed description thereof
will not be repeated. The solid-state image capturing apparatus 1e
is different from the solid-state image capturing apparatus 1c
shown in FIG. 22 in that a lens array 9b is provided between the
composite optical filter array 8a and the optical sensor array 6a,
in addition to the lens array 9a. The lens array 9b has the same
configuration as that of the lens array 9a.
FIG. 29 is a cross-sectional view of the solid-state image
capturing apparatus 1e according to Embodiment 13. The same
reference numerals are given to the same components as the
components described in FIG. 23, and detailed description thereof
will not be repeated. The solid-state image capturing apparatus 1e
is different from the solid-state image capturing apparatus 1c
shown in FIG. 23 in that the concentrating lens 27 described in
FIG. 26 is additionally provided.
In the example of FIG. 29, the inorganic film optical filter 17
includes the first optical filter 18, the second optical filter 19,
and the third optical filter 20. In FIG. 29, the shape of the light
beam L4 is shown, but it is possible to enhance sensitivity of the
photoelectric conversion unit 12 by a concentration effect based on
two lenses of the concentrating lens 22 and the concentrating lens
27. Further, by performing concentration at a central portion of
the second optical filter 19 where a filter film thickness is
stable, it is possible to reduce variation in transmission
characteristics of the second optical filter 19, and to reduce
light leakage to adjacent cells. Thus, it is possible to enhance
color separation. The example of the second optical filter 19 is
shown, but this is similarly applied to the first optical filter 18
and the third optical filter 20.
The example of FIG. 29 may be applied to a light detecting device
according to this embodiment.
FIGS. 30(a) and 30(b) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus 1e
according to Embodiment 13. FIG. 30(a) is a cross-sectional view
after the inorganic film optical filter 17 and the spacer film 21
are formed. The manufacturing method employs the same processes as
those of FIGS. 27(a) to 27(d) in Embodiment 12. Then, as shown in
FIG. 30(b), acryl is formed thereon, and then, is etched so that a
photoresist (not shown) shape patterned in a predetermined shape is
transferred, to thereby form the concentrating lens 22.
The example of FIGS. 30(a) and 30(b) may be applied to a method for
manufacturing a light detecting device according to this
embodiment.
Embodiment 14
FIG. 31(a) is a diagram illustrating a configuration of a
solid-state image capturing apparatus 1f according to Embodiment
14. FIG. 31(b) is a diagram illustrating a configuration of another
solid-state image capturing apparatus 1g according to Embodiment
14. The same reference numerals are given to the same components as
the components described in FIG. 14, and detailed description
thereof will not be repeated. The solid-state image capturing
apparatus if shown in FIG. 31(a) is different from the solid-state
image capturing apparatus 1b shown in FIG. 14 in that an organic
filter array 10a (or a second composite optical filter array) is
provided on a side opposite to the optical sensor 6a with respect
to the composite optical filter array 8a (or a first composite
optical filter array). The organic filter array 10a includes plural
composite organic filters 5h. Each of the plural composite organic
filters 5h includes optical filters 2s, 2t, 2u, and 2v which are
arranged in two rows and two columns and are different in
transmission wavelength bands. The optical filters 2s, 2t, 2u, and
2v are formed of organic materials. The optical filters 2s, 2t, 2u,
and 2v are regularly arranged in plan to correspond to the optical
filters 2a, 2b, 2c, and 2d of the composite optical filters 8a. The
optical filters 2a to 2d of the composite optical filter 5a may be
formed of different materials. Further, at least two of the optical
filters 2a to 2d may be formed of the same material. Furthermore,
the optical filters 2s to 2v of the composite organic filter 5h may
be formed of different materials. In addition, at least two of the
optical filters 2s to 2v may be formed of the same material.
The solid-state image capturing apparatus 1g shown in FIG. 31(b) is
different from the solid-state image capturing apparatus 1f shown
in FIG. 31(a) in that the organic filter array 10a (the second
composite optical filter array) is provided between the composite
optical filter 8a (the first composite optical filter) and the
optical sensor array 6a. The solid-state image capturing apparatus
1g has the same configuration as that of the solid-state image
capturing apparatus 1f except for the above-described difference.
The optical filters 2a to 2d of the composite optical filter 5a may
be formed of different materials. Further, at least two of the
optical filters 2a to 2d may be formed of the same material.
Furthermore, the optical filters 2s to 2v of the composite organic
filter 5h may be formed of different materials. In addition, at
least two of the optical filters 2s to 2v may be formed of the same
material.
FIG. 32 is a cross-sectional view of the solid-state image
capturing apparatus 1f according to Embodiment 14. The same
reference numerals are given to the same components as the
components described in FIG. 15, and detailed description thereof
will not be repeated. The solid-state image capturing apparatus 1f
is different from the solid-state image capturing apparatus 1b
shown in FIG. 15 in that an organic film optical filter 24 and a
second planarization film 26 are formed on the spacer film 21.
The example of FIG. 32 may be applied to a light detecting device
according to this embodiment.
FIG. 33(a) is a graph illustrating wavelength dependency of a
transmittance of an organic film optical filter, FIG. 33(b) is a
graph illustrating wavelength dependency of a transmittance of an
inorganic optical filter, and FIG. 33(c) is a graph illustrating
wavelength dependency of a total transmittance.
Curve G5 of FIG. 33(a) represents wavelength dependency of a
transmittance of the organic film optical filter 24. Curve G6 of
FIG. 33(b) represents wavelength dependency of a transmittance of
the second optical filter (inorganic film optical filter) 19. Curve
G7 of FIG. 33(c) represents wavelength dependency of a total
transmittance of the organic film optical filter 24 and the second
optical filter (inorganic film optical filter) 19. FIG. 33(c) shows
the same characteristics as in the second optical filter of FIG.
21(b). By layering filters having spectrum characteristics as shown
in FIGS. 33(a) and 33(b), it is possible to obtain spectrum
characteristics indicating transmission of a visible light region
and an infrared region as shown in FIG. 33(c).
As shown in FIG. 33(b), the spectrum of the second optical filter
(inorganic film optical filter) 19 may be obtained by cutting a
part of the infrared region, and thus, it is possible to relatively
simply configure a structure of an inorganic multilayer film. By
layering the organic filter (organic film optical filter 24) and
the inorganic film filter (second optical filter 19) in this way,
it is possible to realize complicated spectrum characteristics.
FIGS. 34(a) to 34(c) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus if
according to Embodiment 14. First, a structure shown in FIG. 34(a)
is manufactured according to the method described in FIGS. 17(a) to
(g).
Then, as shown in FIG. 34(b), an organic film is formed thereon,
and then, pattern exposure, development, and baking are performed,
to thereby form the organic film optical filter 24. Then, as shown
in FIG. 34(c), the second flattening film 26 is formed. The second
planarization film 26 is formed by coating of an acrylic
material.
The example of FIGS. 34(a) to 34(c) may be applied to a method for
manufacturing a light detecting device according to this
embodiment.
FIG. 35 is a cross-sectional view of the solid-state image
capturing apparatus according to Embodiment 14. The same reference
numerals are given to the same components as the components
described in FIG. 15, and detailed description thereof will not be
repeated. The solid-state image capturing apparatus 1f is different
from the solid-state image capturing apparatus 1b shown in FIG. 15
in that an organic film optical filter 25 and the second
planarization film 26 are formed on the spacer film 21.
The example of FIG. 35 may be applied to a light detecting device
according to this embodiment.
FIG. 36(a) is a graph illustrating wavelength dependency of a
transmittance of an organic film optical filter, FIG. 36(b) is a
graph illustrating wavelength dependency of a transmittance of an
inorganic optical filter, and FIG. 36(c) is a graph illustrating
wavelength dependency of a total transmittance.
Curve G8 of FIG. 36(a) represents wavelength dependency of a
transmittance of the organic film optical filter 25. Curve G9 of
FIG. 36(b) represents wavelength dependency of a transmittance of
the third optical filter (inorganic film optical filter) 20. Curve
G10 of FIG. 36(c) represents wavelength dependency of a total
transmittance of the organic film optical filter 25 and the third
optical filter (inorganic film optical filter) 20. FIG. 36(c) shows
the same characteristics as in the third optical filter of FIG.
21(b). By layering filters having spectrum characteristics as shown
in FIGS. 36(a) and 36(b), it is possible to obtain spectrum
characteristics indicating transmission of a visible light region
and an infrared region as shown in FIG. 36(c).
FIG. 37 is a cross-sectional view of the solid-state image
capturing apparatus 1f according to Embodiment 14. The same
reference numerals are given to the same components as the
components described in FIG. 15, and detailed description thereof
will not be repeated. The solid-state image capturing apparatus 1f
is different from the solid-state image capturing apparatus 1b
shown in FIG. 15 in that an organic film optical filter 23 and the
second planarization film 26 are formed on the spacer film 21.
The example of FIG. 37 may be applied to a light detecting device
according to this embodiment.
FIG. 38(a) is a graph illustrating wavelength dependency of a
transmittance of an organic film optical filter, FIG. 38(b) is a
graph illustrating wavelength dependency of a transmittance of an
inorganic optical filter, and FIG. 38(c) is a graph illustrating
wavelength dependency of a total transmittance.
Curve G13 of FIG. 38(a) represents wavelength dependency of a
transmittance of the organic film optical filter 23. Curve G14 of
FIG. 38(b) represents wavelength dependency of a transmittance of
the first optical filter (inorganic film optical filter) 18. Curve
G15 of FIG. 38(c) represents wavelength dependency of a total
transmittance of the organic film optical filter 23 and the first
optical filter (inorganic film optical filter) 18. FIG. 38(c) shows
the same characteristics as in the first optical filter of FIG.
21(b). By layering filters having spectrum characteristics as shown
in FIGS. 38(a) and 38(b), it is possible to obtain spectrum
characteristics indicating transmission of a visible light region
and an infrared region as shown in FIG. 38(c).
Embodiment 15
FIG. 39 is a cross-sectional view of a solid-state image capturing
apparatus according to Embodiment 15. The same reference numerals
are given to the same components as the components described in
FIG. 15, and detailed description thereof will not be repeated. The
solid-state image capturing apparatus is different from the
solid-state image capturing apparatus 1b shown in FIG. 15 in that a
first optical filter 18a, a second optical filter 19a, and a third
optical filter 20a are formed, instead of the first optical filter
18, the second optical filter 19, and the third optical filter 20.
The first optical filter 18a, the second optical filter 19a, and
the third optical filter 20a are formed by layering curved layered
members.
In FIG. 39, the shape of the light beam L4 is shown, but it is
possible to enhance sensitivity of the photoelectric conversion
unit 12 by a concentration effect based on the second optical
filter 19a. In the case of this configuration, since it is not
necessary to separately form a lens, the manufacturing cost is
reduced. Further, a film thickness on a substrate is made thin, and
thus, it is possible to enhance a concentration characteristic with
respect to oblique light.
In the example of FIG. 39, the inorganic film optical filter 17
includes the first optical filter 18a, the second optical filter
19a, and the third optical filter 20a.
The example of FIG. 39 may be applied to a light detecting device
according to this embodiment.
FIGS. 40(a) to 40(f) are diagrams illustrating a method for
manufacturing the solid-state image capturing apparatus according
to Embodiment 15. First, as shown in FIG. 40(a), the photoelectric
conversion unit 12 and the charge transfer unit 13 are formed using
ion injection so as to be exposed on a front surface of the
semiconductor substrate 11 formed of silicon. Further, an
insulating film (not shown) which is a silicon oxide film of a
thickness of 100 nm to 3000 nm, for example, is formed on the front
surface of the semiconductor substrate 11 using silicon thermal
oxidation or a chemical vapor deposition (CVD) method.
Then, for example, a polysilicon film is deposited at a thickness
of about 50 nm to 300 nm using a CVD method. Further, n-type
impurities such as phosphor are introduced using thermal diffusion
or ion injection.
Thereafter, the transfer electrode 14 is formed using anisotropic
etching, using a photoresist which is patterned in a predetermined
pattern as a mask, based on a photolithography technique. Then, an
insulating film (not shown) is formed by deposition of an oxidation
film based on polysilicon oxidation or a CVD method.
For example, an antireflection coat (not shown) is formed by
depositing a silicon nitride film and performing anisotropic
etching with respect to the silicon nitride film using a
photoresist patterned in a predetermined pattern as a mask.
Then, tungsten or the like which is a material of a light shielding
film is deposited, and the light shielding film 15 is formed using
a photolithography technique. Further, the insulating film 16 which
is a silicon oxide film is formed using a CVD method. An embedding
shape of the insulating film 16 formed using the CVD method is a
downwardly convex shape between the transfer electrodes 14.
Then, as shown in FIG. 40(b), the first optical filter 18a is
formed on the insulating film 16. The first optical filter is
formed of an inorganic multilayer film, and is formed by
alternately layering a low-refractive-index material and a
high-refractive-index material.
Then, as shown in FIG. 40(c), the first optical filter 18a is
etched using a photoresist (not shown) patterned in a predetermined
pattern as a mask, based on a photolithography technique, to form a
predetermined pattern. Further, as shown in FIGS. 40(d) and 40(e),
the second optical filter 19a and the third optical filter 20a are
formed using the same method in FIGS. 40(b) and 40(c). Then, as
shown in FIG. 40(f), the spacer film 21 is formed. In the
above-mentioned examples, the formation of the optical filters is
performed in the order of the first optical filter 18a, the second
optical filter 19a, and the third optical filter 20a, but the
invention is not limited thereto. The formation order of the three
optical filters may be arbitrarily set.
The examples of FIGS. 40(a) to 40(f) may be applied to a method for
manufacturing the light detecting device according to this
embodiment.
In FIG. 18, by setting a ratio of refractive indexes between a film
Lj of a lowermost layer of the inorganic film optical filter 17 and
the insulating film 16 to 85% or greater and 115% or less, and a
ratio refractive indexes between a film L.sub.0 of a uppermost
layer thereof and the spacer film 21 to 85% or greater and 115% or
less, it is possible to prevent reflection and refraction on an
interface, and to obtain a desired stable transmittance
characteristic of a color filter.
According to the light detecting device, the solid-state image
capturing apparatus, and the method for manufacturing the same
according to this embodiment, it is possible to realize the light
detecting device at a type 1 device size or less.
Further, it is possible to realize a solid-state image capturing
apparatus such as a single-plate type CCD image sensor, or a CMOS
image sensor capable of coping with the number of pixels of
Standard Definition (SD) (640.times.480 pixels), High Definition
(HD) 720 (1280.times.720 pixels), HD 960 (1280.times.920 pixels),
full HD (1920.times.1080 pixels), 4K (pixels four times the full
HD), 8K (pixels eight times the full HD), or the like in a type 1
device size or less.
Further, it is possible to cope with a scanning type such as an
interlace type or a progressive type.
Furthermore, it is possible to realize high-performance electric
characteristics which are equal to or better than those in the
related art.
Example 1
As a result of measurement of a type 1/3 CCD image sensor of 1.3
million pixels, for example, manufactured by the light detecting
device, the solid-state image capturing apparatus, and the method
for manufacturing the same according to this embodiment,
high-performance electric characteristics such as a sensitivity of
1200 mV/.mu.m.sup.2 or greater in deposition for 1 second at F5.6,
a smear of -120 dB or less, and a saturation output of 800 mV or
greater were obtained.
Example 2
FIGS. 41(a) and 41(b) are diagrams illustrating color photos based
on visible light and infrared radiation, captured by the
solid-state image capturing apparatus of this embodiment. FIG.
41(a) shows a photo based on visible light, and FIG. 41(b) shows a
photo based on infrared radiation. It is shown that color based on
visible light in FIG. 41(a) can be reproduced using infrared
radiation in FIG. 41(b).
[Aspect of the Invention Relating to Manufacturing Method]
As an aspect of the invention, in the method for manufacturing the
light detecting device and the solid-state image sensor shown in
FIG. 17, it is preferable that a photoelectric conversion unit and
a charge transfer unit are formed on a front surface of a
semiconductor substrate formed of silicon, and then, an insulating
film which is a silicon oxide film of a thickness of 100 nm to 3000
nm, for example, is formed on the front surface of the
semiconductor substrate using thermal oxidation of silicon or a CVD
method.
Then, it is preferable that a polysilicon film is deposited at a
thickness of about 50 nm to 300 nm using a CVD method, for example,
and then, n-type impurities such as phosphor are introduced using
thermal diffusion or ion injection. Thereafter, it is preferable
that a transfer electrode is formed using anisotropic etching,
using a photoresist which is patterned in a predetermined pattern
as a mask, based on a photolithography technique.
Then, it is preferable that an insulating film is formed by
deposition of an oxidation film based on polysilicon oxidation or a
CVD method.
For example, it is preferable that an antireflection coat is formed
by depositing a silicon nitride film and performing anisotropic
etching with respect to the silicon nitride film using a
photoresist patterned in a predetermined pattern as a mask.
Then, it is preferable that tungsten or the like which is a
material of a light shielding film is deposited, and then, a light
shielding film is formed using a photolithography technique.
Further, it is preferable that an insulating film which is a
silicon oxide film is formed using a CVD method. The insulating
film may be flattened using CMP or etching.
Further, it is preferable that the first optical filter is formed
on the insulating film. Here, it is preferable that the first
optical filter is formed by an inorganic multilayer film, and is
formed by alternately layering a low-refractive-index material and
a high-refractive-index material. It is preferable that a silicon
oxide film SiO.sub.2 is used as the low-refractive-index material
and a silicon nitride film SiN or a titanium oxide film TiO.sub.2
is used as the high-refractive-index material. The multilayer film
may be formed using a CVD method, or may be formed using a
deposition method or a sputtering method.
Then, as shown in FIG. 17(b), it is preferable that the first
optical filter is etched using a photoresist patterned in a
predetermined pattern as a mask, based on a photolithography
technique, to form a predetermined pattern.
Then, as shown in FIG. 17(c), it is preferable that the second
optical filter is formed using a CVD method or the like.
Then, as shown in FIG. 17(d), it is preferable that the second
optical filter is etched using a photoresist patterned in a
predetermined pattern as a mask, based on a photolithography
technique, to form a predetermined pattern.
Then, as shown in FIG. 17(e), it is preferable that the third
optical filter is formed using a CVD method or the like.
Then, as shown in FIG. 17(f), it is preferable that the third
optical filter is etched using a photoresist patterned in a
predetermined pattern as a mask, based on a photolithography
technique, to form a predetermined pattern.
Then, as shown in FIG. 17(g), the first planarization film is
formed. It is preferable that the first planarization film is
formed by coating of a silicon oxide film SiO.sub.2 using a
spin-on-glass (SOG) method or by coating of an acrylic
material.
Further, it is preferable that acryl is formed thereon, and then,
is etched so that a photoresist shape patterned in a predetermined
shape is transferred, to thereby form a first lens, as the method
for manufacturing the light detecting device and the solid-state
image sensor shown in FIG. 24.
Further, it is preferable that the photoelectric conversion unit
and the charge transfer unit are formed using ion injection so as
to be exposed on a front surface of the semiconductor substrate
formed of silicon, and then, an insulating film which is a silicon
oxide film of a thickness of 100 nm to 3000 nm, for example, is
formed using silicon thermal oxidation or a CVD method, as the
method for manufacturing the light detecting device and the
solid-state image sensor shown in FIG. 27.
Then, for example, it is preferable that a polysilicon film is
deposited at a thickness of about 50 nm to 300 nm using a CVD
method, and then, n-type impurities such as phosphor are introduced
using thermal diffusion or ion injection. Then, it is preferable
that a transfer electrode is formed using anisotropic etching,
using a photoresist which is patterned in a predetermined pattern
as a mask, based on a photolithography technique.
Then, it is preferable that an insulating film is formed by
deposition of an oxidation film based on polysilicon oxidation or a
CVD method, and then, an antireflection coat is formed by
depositing a silicon nitride film and performing anisotropic
etching with respect to the silicon nitride film using a
photoresist patterned in a predetermined pattern as a mask.
Then, it is preferable that tungsten or the like which is a
material of a light shielding film is deposited, and then, a light
shielding film is formed using a photolithography technique.
Further, it is preferable that an insulating film which is a
silicon oxide film is formed using a CVD method, and that an
embedding shape of the insulating film formed using the CVD method
is a downwardly convex shape between the transfer electrodes.
Then, it is preferable that a silicon nitride film is formed using
a CVD method, for example. Then, it is preferable that a second
lens is formed using an etching method or a CMP method, and then,
the first optical filter, the second optical filter, and the third
optical filter are formed. Further, it is preferable that the
formation order of the first optical filter, the second optical
filter, and the third optical filter is arbitrarily set.
The second lens 2 is formed using the etching method or the CMP
method, but it is possible to obtain the same lens effect as in the
second lens 2 without using the etching method or the CMP method.
By performing etching, a distance between the substrate and each
filter is reduced, and thus, the sensitivity is enhanced.
Further, as the method for manufacturing the light detecting device
and the solid-state image sensor, it is preferable that a
photoelectric conversion unit and a charge transfer unit are formed
on a front surface of a semiconductor substrate formed of silicon,
and then, an insulating film which is a silicon oxide film of a
thickness of 100 nm to 3000 nm, for example, is formed on the front
surface of the semiconductor substrate using thermal oxidation of
silicon or a CVD method.
Then, it is preferable that a polysilicon film is deposited at a
thickness of about 50 nm to 300 nm using a CVD method, for example,
and then, n-type impurities such as phosphor are introduced using
thermal diffusion or ion injection.
Thereafter, it is preferable that a transfer electrode is formed
using anisotropic etching, using a photoresist which is patterned
in a predetermined pattern as a mask, based on a photolithography
technique, and then, an insulating film is formed by deposition of
an oxidation film based on polysilicon oxidation or a CVD
method.
For example, it is preferable that an antireflection coat is formed
by depositing a silicon nitride film and performing anisotropic
etching with respect to the silicon nitride film using a
photoresist patterned in a predetermined pattern as a mask.
Then, it is preferable that tungsten or the like which is a
material of a light shielding film is deposited, and then, a light
shielding film is formed using a photolithography technique. Then,
it is preferable that an insulating film which is a silicon oxide
film is formed using a CVD method, and that an embedding shape of
the insulating film formed using the CVD method is a downwardly
convex shape between the transfer electrodes.
Then, the first optical filter is formed on the insulating film. It
is preferable that the first optical filter is formed on the
insulating film. Here, it is preferable that the first optical
filter is formed by an inorganic multilayer film, and is formed by
alternately layering a low-refractive-index material and a
high-refractive-index material.
It is preferable that the first optical filter is etched using a
photoresist patterned in a predetermined pattern as a mask, based
on a photolithography technique, to form a predetermined
pattern.
It is preferable that the second optical filter and the third
filter are formed in the same method.
Then, it is preferable that the first planarization film is
formed.
By setting the ratio of refractive indexes between the film Lj of
the lowermost layer of the inorganic film optical filter and the
insulating film to 85% or greater and 115% or less, and the ratio
refractive indexes between the film L.sub.0 of the uppermost layer
thereof and the first planarization film to 85% or greater and 115%
or less, it is possible to prevent reflection and refraction on an
interface, and to obtain a desired stable transmittance
characteristic of a color filter.
CONCLUSION
A light detecting device 1 according to Aspect 1 of the invention
includes: an optical filter 2 that transmits a first wavelength
light having a wavelength in a first wavelength range, a second
wavelength light having a wavelength in a second wavelength range,
. . . , and an n-th wavelength light having a wavelength in an n-th
wavelength range (n is an integer), in light from an object; an
optical sensor 3 that detects at least one of a first wavelength
light intensity of the first wavelength light, a second wavelength
light intensity of the second wavelength light, . . . , and an n-th
wavelength light intensity of the n-th wavelength light; and an
analysis unit 4 that estimates a light intensity of light having a
wavelength in a wavelength range other than at least one of the
first wavelength range, the second wavelength range, . . . , and
the n-th wavelength range based on at least one of the first
wavelength light intensity, the second wavelength light intensity,
. . . , and the n-th wavelength light intensity detected by the
optical sensor 3, in which a correlative relationship exists
between a light intensity of light having a wavelength in the at
least one wavelength range and the light intensity of the light
having the wavelength in the wavelength range other than the at
least one wavelength range.
According to this configuration, it is possible to estimate the
light intensity of light having the wavelength in the wavelength
range other than at least one of the first wavelength range, the
second wavelength range, . . . , and the n-th wavelength range
based on at least one of the first wavelength light intensity, the
second wavelength light intensity, . . . , and the n-th wavelength
light intensity having the correlative relationship, and thus, it
is possible to perform color reproduction or color imaging for an
object under an extremely-low-illuminance environment and a 0 lux
environment.
Each of light detecting devices 1a and 1h according to Aspect 2 of
the invention includes: plural optical filters 2a to 2d having
different transmission wavelength bands; and plural optical sensors
3a to 3d that receive light respectively passed through the plural
optical filters 2a to 2d, in which each of the plural optical
filters 2a to 2d is configured so that plural layered members S1 to
S6 having a transmittance of 50% or greater in wavelength regions
of visible light and infrared light are layered, the plural layered
members S1 to S6 have the same or different refractive indexes,
respectively, each of the plural optical filters 2a to 2d reflects
light in a predetermined wavelength range to transmit light in a
different wavelength range, and the plural optical filters 2a to 2d
are arranged in plan with a space or a spacer member 7 being
interposed therebetween.
According to this configuration, by detecting the first wavelength
light intensity of the first wavelength light transmitted by one of
the plural optical filters and the second wavelength light
intensity of the second wavelength light transmitted by the other
one of the plural filters, it is possible to estimate the light
intensity of light having the wavelength in the wavelength range
other than the first wavelength range and the second wavelength
range, and thus, it is possible to perform color reproduction or
color imaging for an object under an extremely-low-illuminance
environment and a 0 lux environment.
Each of light detecting devices 1a and 1h according to Aspect 3 of
the invention may further include plural lenses provided on a side
opposite to the plural optical sensors 3a to 3d with respect to the
plural optical filters 2a to 2d, in Aspect 2.
According to this configuration, light beams from an object are
concentrated by plural lenses, pass through plural optical filters,
and enter plural optical sensors. Accordingly, it is possible to
enhance sensitivity of the first and second optical sensors by
light concentration effects based on plural lenses.
Each of light detecting devices 1a and 1h according to Aspect 4 of
the invention may further include plural lenses arranged between
the plural optical filters 2a to 2d and the plural optical sensors
3a and 3d, in Aspect 2.
According to this configuration, light beams from an object are
concentrated by plural lenses, pass through plural optical filters,
and enter plural optical sensors. Accordingly, it is possible to
enhance sensitivity of the plural optical sensors by light
concentration effects based on plural lenses.
Each of light detecting devices 1a and 1h according to Aspect 5 of
the invention may further include plural first lenses provided on a
side opposite to the plural optical sensors 3a to 3d with respect
to the plural optical filters 2a to 2d, and plural second lenses
arranged between the plural optical filters 2a to 2d and the plural
optical sensors 3a and 3d, in Aspect 2.
According to this configuration, light beams from an object are
concentrated by the plural first lenses, pass through plural
optical filters, are concentrated by the plural second lenses, and
enter the plural optical sensors. Accordingly, it is possible to
enhance sensitivity of the plural optical sensors by light
concentration effects based on the plural first and second
lenses.
In a light detecting device 1a or 1h according to Aspect 6 of the
invention, light from the object may be infrared light, and the
analysis unit 4 may estimate a color, under visible light, of the
object that reflects the infrared light, based on at least one of
the first wavelength light intensity, the second wavelength light
intensity, . . . , and the n-th wavelength light intensity detected
by the optical sensors 3a to 3d, in Aspect 1.
According to this configuration, it is possible to estimate color
of an object under visible light using infrared light from the
object, and thus, it is possible to perform color reproduction or
color imaging for an object under an extremely-low-illuminance
environment and a 0 lux environment.
Each of light detecting devices 1a and 1h according to Aspect 7 of
the invention may further include an analysis unit 4 that estimates
a color, under visible light, of an object that reflects the
infrared light, based on at least one of the first wavelength light
intensity, the second wavelength light intensity, . . . , and the
n-th wavelength light intensity detected by the plural optical
sensors 3a to 3d, in Aspect 2.
According to this configuration, it is possible to estimate color,
under visible light, of an object that reflects infrared light, and
thus, it is possible to perform color reproduction or color imaging
for an object under an extremely-low-illuminance environment and a
0 lux environment.
Each of solid-state image capturing apparatuses 1b to 1e according
to Aspect 8 of the invention includes a composite optical filter
array 8a that includes plural composite optical filters 5a and an
optical sensor array 6a in which plural optical sensors 3a to 3d
are arranged. Here, each of the plural composite optical filters
includes plural optical filters 2a to 2d having different
transmission wavelength bands, and each of the plural optical
filters 2a to 2d transmits visible light having a predetermined
wavelength and infrared light having a predetermined wavelength.
Plural layered members S1 to S6 having different refractive indexes
are layered in each of the plural optical filters 2a to 2d, and the
plural optical sensors 3a to 3d have sensitivity to the visible
light and the infrared light. The plural optical filters 2a to 2d
are regularly arranged in plan, and the plural optical sensors 3a
to 3d are regularly arranged in plan.
According to this configuration, since optical sensors detect
visible light having a predetermined wavelength and infrared light
having a predetermined wavelength, passed through plural optical
filters, it is possible to perform color reproduction or color
imaging for an object under an extremely-low-illuminance
environment and a 0 lux environment.
Each of solid-state image capturing apparatuses 1c and 1e according
to Aspect 9 of the invention may further include a lens array 9a
that is arranged on a side opposite to the optical sensor array 6a
with respect to the composite optical filter array 8a, and the
plural lenses may be regularly arranged in plan, in Aspect 8.
According to this configuration, light beams from an object are
concentrated by a lens array, pass through an optical filter, and
enter an optical sensor. Accordingly, it is possible to enhance
sensitivity of the optical sensor by light concentration effects
based on the lens array.
Each of solid-state image capturing apparatuses 1d and 1e according
to Aspect 10 of the invention may include a lens array 9a or 9b
that is disposed between the composite optical filter array 8a and
the optical sensor array 6a and includes plural lenses, and the
plural lenses may be regularly arranged in plan to correspond to
the plural optical filters 2a to 2d, in Aspect 8.
According to this configuration, light beams from an object are
concentrated by a lens array, pass through an optical filter, and
enter an optical sensor. Accordingly, it is possible to enhance
sensitivity of an optical sensor by light concentration effects
based on a lens array.
A solid-state image capturing apparatus 1e according to Aspect 11
of the invention may further include a first lens array 9a that is
arranged on a side opposite to the optical sensor array 6a with
respect to the composite optical filter array 8a and has plural
first lenses, and a second lens array 9b that is arranged between
the composite optical filter array 8a and the optical sensor array
6a and has plural second lenses, and the plural first and second
lenses may be regularly arranged in plan to correspond to the
plural optical filters 2a to 2d, in Aspect 8.
According to this configuration, light beams from an object are
concentrated by a first lens, pass through an optical filter, are
concentrated by a second lens, and enter an optical sensor.
Accordingly, it is possible to enhance sensitivity of the optical
sensor by light concentration effects based on the first and second
lenses.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 12 of the invention, the optical filters 2a to
2d may absorb visible light other than the visible light having the
predetermined wavelength and infrared light other than the infrared
light having the predetermined wavelength, and thus, may transmit
the visible light having the predetermined wavelength and the
infrared light having the predetermined wavelength, in Aspect
8.
According to this configuration, it is possible to transmit visible
light having a predetermined wavelength and infrared light having a
predetermined wavelength with a simple configuration.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 13 of the invention, the optical filters 2a to
2d may reflect visible light other than the visible light having
the predetermined wavelength and infrared light other than the
infrared light having the predetermined wavelength, and thus, may
transmit the visible light having the predetermined wavelength and
the infrared light having the predetermined wavelength, in Aspect
8.
According to this configuration, it is possible to transmit visible
light having a predetermined wavelength and infrared light having a
predetermined wavelength with a simple configuration.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 14 of the invention, the layered members S1 to
S6 may include at least one of an organic material and an inorganic
material, in Aspect 8.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 15 of the invention, the layered members S1 to
S6 may be formed of a dielectric substance, in Aspect 8.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 16 of the invention, the shape of the optical
filters 2a to 2d may be a plate shape, a concave shape, a bowl
shape, or a disk shape, in Aspect 8.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 17 of the invention, the shape of the layered
members S1 to S6 may be a plate shape, a concave shape, a bowl
shape, or a disk shape, in Aspect 8.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 18 of the invention, the shape of the optical
filters 2a to 2d may be a cube, a rectangle, a prism, a pyramid, a
frustum, a cylinder, a cone, a truncated cone, an elliptic
cylinder, an elliptical cone, an elliptical frustum, a drum shape
or a barrel shape, in Aspect 8.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 19 of the invention, when a width is a size of
the optical filters 2a to 2d along the plane on which the optical
filters 2a to 2d are arranged, a length is a size of the optical
filters 2a to 2d along the plane, vertical to the size along the
plane, and a height is a size of the optical filters 2a to 2d
vertical to the plane, the optical filters 2a to 2d may have sizes
which are equal or close to each other in the width, the length,
and the height, in Aspect 8.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 20 of the invention, when a width is a size of
the optical filters 2a to 2d along the plane on which the optical
filters 2a to 2d are arranged, a length is a size of the optical
filters 2a to 2d along the plane, vertical to the size along the
plane, and a height is a size of the optical filters vertical to
the plane, the optical filters 2a to 2d may be formed by layering
plural layered members S1 to S6 having a size of a width of 10
micrometers or less, a length of 10 micrometers or less, and a
height of 1 micrometer or less and having different refractive
indexes, in Aspect 8.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 21 of the invention, a space SP may be formed
between the plural optical filters 2a to 2d, in Aspect 8.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 22 of the invention, a spacer member 7 may be
formed between the plural optical filters 2a to 2d, in Aspect
8.
Each of solid-state image capturing apparatuses 1f to 1g according
to Aspect 23 of the invention includes a first composite optical
filter array (composite optical filter array 8a), an optical sensor
array 6a, and a second composite optical filter array (organic
filter array 10a) that is disposed between the first composite
optical filter array (composite optical filter array 8a) and the
optical sensor array 6a or on a side opposite to the optical sensor
array 6a with respect to the first composite optical filter array
(composite optical filter array 8a). Here, the first composite
optical filter array (composite optical filter array 8a) includes
plural first composite optical filters (composite optical filters
5a), and each of the plural first composite optical filters
(composite optical filters 5a) includes plural optical filters
(optical filters 2a to 2d) having different transmission wavelength
bands. The second composite optical filter array (organic filter
array 10a) includes plural second composite optical filters
(composite organic filters 5h), and each of the plural second
composite optical filters (composite organic filters 5h) includes
plural optical filters (optical filters 2s, 2t, 2u, and 2v) having
different transmission wavelength bands. Each of the plural optical
filters (optical filters 2a to 2d) that form the plural first
composite optical filters is formed of an inorganic or organic
material, and each of the plural optical filters (optical filers
2s, 2t, 2u, and 2v) that form the plural second composite optical
filters is formed of an organic or inorganic material. The plural
respective optical filters (optical filters 2a to 2d) that form the
plural first composite optical filters are regularly arranged in
plan, and the plural respective optical filters (optical filters
2s, 2t, 2u, and 2v) that form the plural second composite optical
filters are regularly arranged in plan so as to correspond to the
plural respective optical filters (optical filters 2a to 2d) that
form the plural first composite optical filters. A combination of
one optical filter among the plural optical filters (optical
filters 2a to 2d) that form the plural first composite optical
filters and one optical filter among the plural optical filters
(optical filters 2s, 2t, 2u, and 2v) that form the plural second
composite optical filters corresponding to the one optical filter
among the plural optical filters (optical filters 2a to 2d) that
form the plural first composite optical filters transmits visible
light having a predetermined wavelength and infrared light having a
predetermined wavelength. The optical sensor array 6a includes
plural optical sensors 3a to 3d having sensitivity to the visible
light and the infrared light. The plural respective optical sensors
3a to 3d are regularly arranged in plan so as to correspond to the
plural optical filters (optical filters 2a to 2d).
According to this configuration, a combination of one optical
filter among the plural first optical filters and one optical
filter among the plural second optical filters corresponding to the
one optical filter among the plural first optical filters transmits
visible light having a predetermined wavelength and infrared light
having a predetermined wavelength, and thus, the optical sensor can
detect the visible light and the infrared light. Thus, it is
possible to perform color reproduction or color imaging for an
object under an extremely-low-illuminance environment and a 0 lux
environment.
In each of solid-state image capturing apparatuses 1b to 1e, 1f,
and 1g according to Aspect 24 of the invention, the inorganic
material may include silicon oxide, silicon nitride, or titanium
oxide, in Aspect 14 or 23.
In each of solid-state image capturing apparatuses 1f and 1g
according to Aspect 25 of the invention, plural layered members S1
to S6 having different refractive indexes may be layered in each of
the plural first and second optical filters (optical filters 2a to
2d, and optical filters 2s, 2t, 2u, and 2v), in Aspect 23.
In each of solid-state image capturing apparatuses 1f and 1g
according to Aspect 26 of the invention, each of the plural first
and second optical filters (optical filters 2a to 2d, and optical
filters 2s, 2t, 2u, and 2v) may include plural
high-refractive-index layers (high-refractive-index materials
H.sub.1 to H.sub.j), the plural high-refractive-index layers
(high-refractive-index materials H.sub.1 to H.sub.j) may be layers
formed by a layered member having a highest refractive index in the
wavelength regions of the visible light and the infrared light
among the plural layered members formed in the plural respective
first and the second optical filters (optical filters 2a to 2d, and
optical filters 2s, 2t, 2u, and 2v), and the plural respective
high-refractive-index layers (high-refractive-index materials
H.sub.1 to H.sub.j) may have different refractive indexes, in
Aspect 23.
Each of solid-state image capturing apparatuses 1f and 1g according
to Aspect 27 of the invention, each of the plural first and second
optical filters (optical filters 2a to 2d, and optical filters 2s,
2t, 2u, and 2v) may include plural low-refractive-index layers
(L.sub.0 to L.sub.j), the plural low-refractive-index layers
(low-refractive-index materials L.sub.0 to L.sub.j) may be layers
formed by a layered member having a lowest refractive index in the
wavelength regions of the visible light and the infrared light
among the plural layered members formed in the plural respective
first and the second optical filters (optical filters 2a to 2d, and
optical filters 2s, 2t, 2u, and 2v), and the plural respective
low-refractive-index layers (low-refractive-index materials L.sub.0
to L.sub.j) may have different refractive indexes, in Aspect
23.
In each of solid-state image capturing apparatuses 1f and 1g
according to Aspect 28 of the invention, each of the plural first
and second optical filters (optical filters 2a to 2d, optical
filters 2s, 2t, 2u, and 2v) may include a lowermost layer
(low-refractive-index material L.sub.j), an uppermost layer
(low-refractive-index material L.sub.0), a layer (insulating layer
16) adjacent to the lowermost layer, and a layer (spacer film 21)
adjacent to the uppermost layer, in Aspect 23. Here, a ratio
between a refractive index of the lowermost layer
(low-refractive-index material L.sub.j) and a refractive index of
the layer (insulating layer 16) adjacent to the lowermost layer may
be 85% or greater and 115% or less, and a ratio between a
refractive index of the uppermost layer (low-refractive-index
material L.sub.0) and a refractive index of a layer (spacer layer
21) adjacent to the uppermost layer may be 85% or greater and 115%
or less.
Each of solid-state image capturing apparatuses 1b to 1g according
to Aspect 29 of the invention includes a composite optical filter
array 8a that includes plural composite optical filters 5a, and an
optical sensor array 6a in which plural optical sensors are
arranged. Here, each of the plural composite optical filters 5a
includes a first optical filter 18 that transmits light in a first
wavelength range group, a second optical filter 19 that transmits
light in a second wavelength range group, . . . , and an n-th
optical filter that transmits light in an n-th wavelength range
group (n is an integer). A k-th wavelength range group (k is an
integer that satisfies 1.ltoreq.k.ltoreq.n) includes a (k, 1)
wavelength range, a (k, 2) wavelength range, . . . , and a (k, m)
wavelength range (m is an integer). A correlative relationship
exists between light intensities of the respective (k, 1)
wavelength range, the (k, 2) wavelength range, . . . , and the (k,
m) wavelength range. The composite optical sensor includes a first
optical sensor 3a, a second optical sensor 3b, . . . , and an n-th
optical sensor. A k-th optical sensor detects at least one of the
respective light intensities of the (k, 1) wavelength range, the
(k, 2) wavelength range, . . . , and the (k, m) wavelength range.
The solid-state image capturing apparatus further includes an
analysis unit 4 that estimates, from a light intensity of light
having a wavelength in the at least one wavelength range, a light
intensity of light having a wavelength in a wavelength range other
than the at least one wavelength range. A correlative relationship
exists between the light intensity of the light having the
wavelength in the at least one wavelength range and the light
intensity of the light having the wavelength in the wavelength
range other than the at least one wavelength range.
According to this configuration, it is possible to estimate a light
intensity of light having a wavelength in a wavelength range other
than at least one of the respective light intensities of the (k, 1)
wavelength range, the (k, 2) wavelength range, . . . , and the (k,
m) wavelength range, based on at least one of the respective light
intensities of the (k, 1) wavelength range, the (k, 2) wavelength
range, . . . , and the (k, m) wavelength range, and thus, it is
possible to perform color reproduction or color imaging for an
object under an extremely-low-illuminance environment and a 0 lux
environment.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 30 of the invention, one of the first to n-th
optical filters may transmit red light having a red light
wavelength region, and infrared light having a wavelength region
which is closest to the red light wavelength region, in Aspect
29.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 31 of the invention, n may be 3, the (1, 1)
wavelength range may correspond to a red wavelength region, the (1,
2) wavelength range may correspond to a first infrared wavelength
region, the (2, 1) wavelength range may correspond to a blue
wavelength region, the (2, 2) wavelength range may correspond to a
second infrared wavelength region, the (3, 1) wavelength range may
correspond to a green wavelength region, and the (3, 2) wavelength
range may correspond to a third infrared wavelength region, in any
one aspect of Aspects 8 to 30. Here, the second infrared wavelength
region may be positioned on a longer wavelength side with respect
to the first infrared wavelength region, and the third infrared
wavelength region may be positioned on a longer wavelength side
with respect to the second infrared wavelength region.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 32 of the invention, n may be 3, the (1, 1)
wavelength range may include a blue wavelength region and a red
wavelength region, the (1, 2) wavelength range may include a first
infrared wavelength region and a second infrared wavelength region,
the (2, 1) wavelength range may include a green wavelength region
and the blue wavelength region, the (2, 2) wavelength range may
include the second infrared wavelength region and a third infrared
wavelength region, the (3, 1) wavelength range may include the
first infrared wavelength region and the third infrared wavelength
region, and the (3, 2) wavelength range may include the first
infrared wavelength region and the third infrared wavelength
region, in any one aspect of Aspects 8 to 30. Here, the second
infrared wavelength region may be positioned on a longer wavelength
side with respect to the first infrared wavelength region, and the
third infrared wavelength region may be positioned on a longer
wavelength side with respect to the second infrared wavelength
region.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 33 of the invention, n may be 3, the (1, 1)
wavelength range may include a red wavelength region, a green
wavelength region, and a blue wavelength region, the (1, 2)
wavelength range may include a first infrared wavelength region, a
second infrared wavelength region, and a third infrared wavelength
region, the (2, 1) wavelength range may include the red wavelength
region, the (2, 2) wavelength range may include the first infrared
wavelength region, the (3, 1) wavelength range may include the
green wavelength region, and the (3, 2) wavelength range may
include the third infrared wavelength, in any one aspect of Aspects
8 to 30. Here, the second infrared wavelength region may be
positioned on a longer wavelength side with respect to the first
infrared wavelength region, and the third infrared wavelength
region may be positioned on a longer wavelength side with respect
to the second infrared wavelength region.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 34 of the invention, n may be 3, the (1, 1)
wavelength range may include a red wavelength region, a green
wavelength region, and a blue wavelength region, the (1, 2)
wavelength range may include a first infrared wavelength region, a
second infrared wavelength region, and a third infrared wavelength
region, the (2, 1) wavelength range may include the green
wavelength region, the (2, 2) wavelength range may include the
third infrared wavelength region, the (3, 1) wavelength range may
include the blue wavelength region, and the (3, 2) wavelength range
may include the second infrared wavelength, in any one aspect of
Aspects 8 to 30. Here, the second infrared wavelength region may be
positioned on a longer wavelength side with respect to the first
infrared wavelength region, and the third infrared wavelength
region may be positioned on a longer wavelength side with respect
to the second infrared wavelength region.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 35 of the invention, n may be 3, the (1, 1)
wavelength range may include a red wavelength region, a green
wavelength region, and a blue wavelength region, the (1, 2)
wavelength range may include a first infrared wavelength region, a
second infrared wavelength region, and a third infrared wavelength
region, the (2, 1) wavelength range may include the green
wavelength region, the (2, 2) wavelength range may include the
second infrared wavelength region, the (3, 1) wavelength range may
include the red wavelength region, and the (3, 2) wavelength range
may include the first infrared wavelength, in any one aspect of
Aspects 8 to 30. Here, the second infrared wavelength region may be
positioned on a longer wavelength side with respect to the first
infrared wavelength region, and the third infrared wavelength
region may be positioned on a longer wavelength side with respect
to the second infrared wavelength region.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 36 of the invention, n may be 3, the (1, 1)
wavelength range may include a red wavelength region, a green
wavelength region, and a blue wavelength region, the (1, 2)
wavelength range may include a first infrared wavelength region, a
second infrared wavelength region, and a third infrared wavelength
region, the (2, 1) wavelength range may include the green
wavelength region and the blue wavelength region, the (2, 2)
wavelength range may include the third infrared wavelength region
and the second infrared wavelength region, the (3, 1) wavelength
range may include the blue wavelength region and the red wavelength
region, and the (3, 2) wavelength range may include the second
infrared wavelength and the first infrared wavelength region, in
any one aspect of Aspects 8 to 30. Here, the second infrared
wavelength region may be positioned on a longer wavelength side
with respect to the first infrared wavelength region, and the third
infrared wavelength region may be positioned on a longer wavelength
side with respect to the second infrared wavelength region.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 37 of the invention, n may be 3, the (1, 1)
wavelength range may include a red wavelength region, a green
wavelength region, and a blue wavelength region, the (1, 2)
wavelength range may include a first infrared wavelength region, a
second infrared wavelength region, and a third infrared wavelength
region, the (2, 1) wavelength range may include the blue wavelength
region and the red wavelength region, the (2, 2) wavelength range
may include the second infrared wavelength region and the first
infrared wavelength region, the (3, 1) wavelength range may include
the red wavelength region and the green wavelength region, and the
(3, 2) wavelength range may include the first infrared wavelength
and the third infrared wavelength region, in any one aspect of
Aspects 8 to 30. Here, the second infrared wavelength region may be
positioned on a longer wavelength side with respect to the first
infrared wavelength region, and the third infrared wavelength
region may be positioned on a wavelength side with respect to the
second infrared wavelength region.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 38 of the invention, n may be 3, the (1, 1)
wavelength range may include a red wavelength region, a green
wavelength region, and a blue wavelength region, the (1, 2)
wavelength range may include a first infrared wavelength region, a
second infrared wavelength region, and a third infrared wavelength
region, the (2, 1) wavelength range may include the red wavelength
region and the green wavelength region, the (2, 2) wavelength range
may include the first infrared wavelength region and the third
infrared wavelength region, the (3, 1) wavelength range may include
the green wavelength region and the blue wavelength region, and the
(3, 2) wavelength range may include the third infrared wavelength
and the second infrared wavelength region, in any one aspect of
Aspects 8 to 30. Here, the second infrared wavelength region may be
positioned on a longer wavelength side with respect to the first
infrared wavelength region, and the third infrared wavelength
region may be positioned on a longer wavelength side with respect
to the second infrared wavelength region.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 39 of the invention, plural layered members
having a transmittance of 50% or more may be layered in space or in
wavelength regions of visible light and infrared light, in the
first optical filter 18, in any one aspect of Aspects 33 to 38.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 40 of the invention, the analysis unit 4 may
calculate the intensity of light from an object having a wavelength
of the blue wavelength region and a wavelength of the second
infrared wavelength region based on the intensity of light that
passes through the first optical filter 18, the intensity of light
that passes through the second optical filter 19, and the intensity
of light that passes through the third optical filter 20, in Aspect
33.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 41 of the invention, the analysis unit 4 may
calculate the intensity of light from an object having a wavelength
of the red wavelength region and a wavelength of the first infrared
wavelength region based on the intensity of light that passes
through the first optical filter 18, the intensity of light that
passes through the second optical filter 19, and the intensity of
light that passes through the third optical filter 20, in Aspect
34.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 42 of the invention, the analysis unit 4 may
calculate the intensity of light from an object having a wavelength
of the green wavelength region and a wavelength of the third
infrared wavelength region based on the intensity of light that
passes through the first optical filter 18, the intensity of light
that passes through the second optical filter 19, and the intensity
of light that passes through the third optical filter 20, in Aspect
35.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 43 of the invention, the analysis unit 4 may
calculate the intensity of light from an object having a wavelength
of the red wavelength region, a wavelength of the green wavelength
region, a wavelength of the first infrared wavelength region, and a
wavelength of the third infrared wavelength region based on the
intensity of light that passes through the first optical filter 18,
the intensity of light that passes through the second optical
filter 19, and the intensity of light that passes through the third
optical filter 20, in Aspect 36.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 44 of the invention, the analysis unit 4 may
calculate the intensity of light from an object having a wavelength
of the blue wavelength region, a wavelength of the green wavelength
region, a wavelength of the third infrared wavelength region, and a
wavelength of the second infrared wavelength region based on the
intensity of light that passes through the first optical filter 18,
the intensity of light that passes through the second optical
filter 19, and the intensity of light that passes through the third
optical filter 20, in Aspect 37.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 45 of the invention, the analysis unit 4 may
calculate the intensity of light from an object having a wavelength
of the blue wavelength region, a wavelength of the red wavelength
region, a wavelength of the second infrared wavelength region, and
a wavelength of the first infrared wavelength region based on the
intensity of light that passes through the first optical filter 18,
the intensity of light that passes through the second optical
filter 19, and the intensity of light that passes through the third
optical filter 20, in Aspect 38.
Each of solid-state image capturing apparatuses 1b to 1g according
to Aspect 46 of the invention may further include a conversion unit
that performs color conversion using matrix calculation, in any one
of Aspects 8, 23, and 29.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 47 of the invention, a refractive index of the
high-refractive-index layer that transmits light having a
wavelength of a blue wavelength region may be lower than a
refractive index of the high-refractive-index layer that transmits
light having a wavelength of a green wavelength region and a
refractive index of the high-refractive-index layer that transmits
light having a wavelength of a red wavelength region, in Aspect
26.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 48 of the invention, plural layered members
having different thicknesses may be layered in each of the plural
composite optical filters, in any one aspect of Aspects 8 and
29.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 49 of the invention, any one of the optical
filters 2a to 2d, and the first to n-th optical filters may include
plural layered members of which refractive indexes and thicknesses
are (n.sub.1, d.sub.1), (n.sub.2, d.sub.2), . . . , and (n.sub.i,
d.sub.i), respectively, and may transmit visible light in a
predetermined wavelength region and infrared light in a
predetermined wavelength region by appropriately setting respective
values of (n.sub.1, d.sub.1), (n.sub.2, d.sub.2), . . . , and
(n.sub.i, d.sub.i) (i is an integer), in any one aspect of Aspects
8, 23, and 29.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 50 of the invention, the optical filters 2a to
2d or the first to n-th optical filters may include plural layered
members of which refractive indexes and thicknesses are
(n.sup.1.sub.1, d.sup.1.sub.1), (n.sup.1.sub.2, d.sup.1.sub.2), . .
. , and (n.sup.1.sub.i, d.sup.1.sub.i); (n.sup.2.sub.1,
d.sup.2.sub.1), (n.sup.2.sub.2, d.sup.2.sub.2), . . . , and
(n.sup.2.sub.i, d.sup.2.sub.i); . . . , and (n.sup.p.sub.1,
d.sup.p.sub.1), (n.sup.p.sub.2, d.sup.p.sub.2), . . . , and
(n.sup.p.sub.i, d.sup.p.sub.i), respectively, and may transmit
visible light in a predetermined wavelength region and infrared
light in a predetermined wavelength region by appropriately setting
respective values of (n.sup.1.sub.2, d.sup.1.sub.1),
(n.sup.1.sub.2, d.sup.1.sub.2), . . . , and (n.sup.1.sub.i,
d.sup.1.sub.i); (n.sup.2.sub.1, d.sup.2.sub.1), (n.sup.2.sub.2,
d.sup.2.sub.2), . . . , and (n.sup.2.sub.i, d.sup.2.sub.i); . . . ,
and (n.sup.p.sub.1, d.sup.p.sub.1), (n.sup.p.sub.2, d.sup.p.sub.2),
. . . , and (n.sup.p.sub.i, d.sup.p.sub.i) (p is an integer that
satisfies 1.ltoreq.p.ltoreq.n), in any one aspect of Aspects 8, 23,
and 29.
Each of solid-state image capturing apparatuses 1b to 1g according
to Aspect 51 of the invention may further include an
electromagnetic wave radiation unit that radiates electromagnetic
waves to an object, in any one aspect of Aspects 8, 23, 29.
Each of solid-state image capturing apparatuses 1b to 1g according
to Aspect 52 of the invention may further include an infrared
radiation unit that radiates infrared light to an object, in any
one aspect of Aspects 8, 23, 29.
Each of solid-state image capturing apparatuses 1b to 1g according
to Aspect 53 of the invention may further include a visible light
radiation unit that radiates visible light to an object, in any one
aspect of Aspects 8, 23, 29.
Each of solid-state image capturing apparatuses 1b to 1g according
to Aspect 54 of the invention may further include a visible light
radiation unit that radiates visible light to an object and an
infrared radiation unit that radiates infrared light to the object,
in any one aspect of Aspects 8, 23, 29.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 55 of the invention, the infrared light is near
infrared light, in Aspect 51 or 53.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 56 of the invention, the spacer member 7 may
include an organic material or an inorganic material, in Aspect
22.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 57 of the invention, the size of the spacer
member 7 may be 10 micrometers or less, in Aspect 22.
In each of solid-state image capturing apparatuses 1b to 1e
according to Aspect 58 of the invention, a size ratio of the
optical filters 2a to 2d to the spacer member 7 along a plane
vertical to a transmission direction of light with respect to the
optical filters 2a to 2d may be 0.5 or greater, in Aspect 22.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 59 of the invention, a ratio, to the size of
the optical filters 2a to 2d or the first to n-th optical filters
along a plane vertical to a transmission direction of light with
respect to the optical filters 2a to 2d or the first to n-th
optical filters, of the size of the optical filters 2a to 2d or the
first to n-th optical filters along a direction vertical to the
plane may be 0.5 or greater, in any one aspect of Aspects 8, 23,
and 29.
In each of solid-state image capturing apparatuses 1c and 1e
according to Aspect 60 of the invention, a cycle at which the
plural optical filters 2a to 2d are regularly arranged in plan, a
cycle at which the plural optical sensors 3a to 3d are regularly
arranged in plan, and a cycle at which the plural lenses are
regularly arranged in plan may be different from each other, in
Aspect 9.
Each of solid-state image capturing apparatuses 1b to 1g according
to Aspect 61 of the invention includes a composite optical filter
array 8a that includes plural composite optical filters 5a and an
optical sensor array 6a in which plural optical sensors 3a to 3d
are arranged. Here, each of the plural composite optical filters 5a
includes plural optical filters 2a to 2d having different
transmission wavelength bands, and each of the plural optical
filters 2a to 2d transmits ultraviolet light having a predetermined
wavelength, visible light having a predetermined wavelength, and
infrared light having a predetermined wavelength. Plural layered
members S1 to Si having different refractive indexes are layered in
each of the plural optical filters 2a to 2d. The plural optical
sensors 3a to 3d have sensitivity to the ultraviolet light, the
visible light, and the infrared light. The plural optical filters
2a to 2d are regularly arranged in plan, and the plural optical
sensors 3a to 3d are regularly arranged in plan.
A method for manufacturing a solid-state image capturing apparatus
according to Aspect 62 of the invention includes forming a first
optical sensor and a second optical sensor (photoelectric
conversion unit 12) on a semiconductor substrate 11; forming an
insulating film 16 on the semiconductor substrate 11 to cover the
first optical sensor and the second optical sensor (photoelectric
conversion unit 12); forming a first optical filter 18
corresponding to the first optical sensor on the insulating film
16; and forming a second optical filter 19 corresponding to the
second optical sensor on the insulating film 16. Here, the first
optical filter 18 and the second optical filter 19 have different
transmission wavelength bands and transmit visible light having a
predetermined wavelength and infrared light having a predetermined
wavelength. Further, each of the first optical filter 18 and the
second optical filter 19 is formed by layering plural layered
members S1 to Si having different refractive indexes. The first and
second optical sensors (photoelectric conversion unit 12) have
sensitivity to the visible light and the infrared light.
Each of solid-state image capturing apparatuses 1b to 1g according
to Aspect 63 of the invention may further include a radiation unit
that radiates, to an object, light in at least region or plural
regions among an ultraviolet wavelength region, a magenta
wavelength region, a blue wavelength region, a cyan wavelength
region, a green wavelength region, a yellow wavelength region, an
orange wavelength region, a red wavelength region, a first infrared
wavelength region, a second infrared wavelength region, a third
infrared wavelength region, . . . , and a n-th infrared wavelength
region, or the like.
Each of solid-state image capturing apparatuses 1b to 1g according
to Aspect 64 of the invention may be provided on a ceiling, a wall,
an electric pole, or the like, and may be mounted on a vehicle, a
ship, a wearable device, or the like.
In each of solid-state image capturing apparatuses 1a and 1h
according to Aspect 65 of the invention, at least one of the plural
layered members layered in each of optical filters 2a to 2d may be
a high-refractive-index layer (high-refractive-index materials
H.sub.1 to H.sub.j) having a refractive index higher than
refractive indexes of the other layered members, and the
high-refractive-index layer of at least one of the plural optical
filters may have a refractive index different from refractive
indexes of high-refractive-index layers of the other optical
filters, in Aspect 2.
In each of solid-state image capturing apparatuses 1a and 1h
according to Aspect 66 of the invention, at least one of the plural
optical filters 2a to 2d may transmit light having a wavelength
shorter than a wavelength of light that the other optical filters
transmit in the wavelength regions (of the visible light and the
infrared light, and the refractive index of the
high-refractive-index layer of the at least one of the plural
optical filters 2a to 2d may be lower than the refractive indexes
of the high-refractive-index layers of the other optical filters,
in Aspect 65.
In each of solid-state image capturing apparatuses 1a and 1h
according to Aspect 67 of the invention, at least one of the plural
layered members may be a lowermost layer (low-refractive-index
material L.sub.j) that is closest to the optical sensors 3a to 3d,
and another one of the plurality of layered members may be an
uppermost layer (low-refractive-index material L.sub.0) that is
most distant from the optical sensors 3a to 3d, in Aspect 2. Here,
a ratio between a refractive index of the lowermost layer
(low-refractive-index material L.sub.j) and a refractive index of a
layer (insulating film 16) adjacent to the lowermost layer may be
85% or greater and 115% or less, and a ratio between a refractive
index of the uppermost layer (low-refractive-index material
L.sub.0) and a refractive index of a layer (spacer film 21)
adjacent to the uppermost layer may be 85% or greater and 115% or
less.
A solid-state image capturing apparatus 1c according to Aspect 68
of the invention may further include a lens array 9a that is
arranged on a side opposite to the optical sensor array 6a with
respect to the composite optical filter array 8a and includes
plural lenses, and the plural lenses may be regularly arranged in
plan, in Aspect 8.
In each of solid-state image capturing apparatuses 1f and 1g
according to Aspect 69 of the invention, at least one of the plural
layered members layered in each of optical filters 2a to 2d that
form the first composite optical filter may be a
high-refractive-index layer (high-refractive-index materials
H.sub.1 to H.sub.j) having a refractive index higher than
refractive indexes of the other layered members, and the
high-refractive-index layer of at least one of the plural optical
filters that form the plural first composite optical filters may
have a refractive index different from refractive indexes of
high-refractive-index layers of the other optical filters, in
Aspect 23.
In each of solid-state image capturing apparatuses 1f and 1g
according to Aspect 70 of the invention, at least one of the plural
optical filters 2a to 2d that form the first composite optical
filter may transmit light having a wavelength shorter than a
wavelength of light that the other optical filters transmit in the
wavelength regions of the visible light and the infrared light, and
the refractive index of the high-refractive-index layer of the at
least one of the plural optical filters 2a to 2d may be lower than
the refractive indexes of the high-refractive-index layers of the
other optical filters, in Aspect 69.
In each of solid-state image capturing apparatuses 1f and 1g
according to Aspect 71 of the invention, one of the plural layered
members of the plural optical filters 2a to 2d that form the first
composite optical filter may be a lowermost layer
(low-refractive-index material L.sub.j) that is closest to the
optical sensors 3a to 3d, and another one of the plural layered
members may be an uppermost layer (low-refractive-index material
L.sub.0) that is most distant from the optical sensors 3a to 3d, in
Aspect 23. Here, a ratio between a refractive index of the
lowermost layer (low-refractive-index material L.sub.j) and a
refractive index of a layer (insulating layer 16) adjacent to the
lowermost layer may be 85% or greater and 115% or less, and a ratio
between a refractive index of the uppermost layer
(low-refractive-index material L.sub.0) and a refractive index of a
layer (spacer film 21) adjacent to the uppermost layer may be 85%
or greater and 115% or less.
Each of solid-state image capturing apparatuses 1f and 1g according
to Aspect 72 of the invention may further include plural lenses
provided on a side opposite to the optical sensor array 6a with
respect to the first composite optical filter array (composite
optical filter array 8a), and the plural lenses may be regularly
arranged in plan, in Aspect 23.
In each of solid-state image capturing apparatuses 1b to 1g
according to Aspect 73 of the invention, n may be 3, the (1, 1)
wavelength range may correspond to a red wavelength region, the (1,
2) wavelength range may correspond to a first infrared wavelength
region, the (2, 1) wavelength range may correspond to a blue
wavelength region, the (2, 2) wavelength range may correspond to a
second infrared wavelength region, the (3, 1) wavelength range may
correspond to a green wavelength region, and the (3, 2) wavelength
range may correspond to a third infrared wavelength region, in
Aspect 30. Here, the second infrared wavelength region may be
positioned on a longer wavelength side with respect to the first
infrared wavelength region, and the third infrared wavelength
region may be positioned on a longer wavelength side with respect
to the second infrared wavelength region.
The invention is not limited to the above-described embodiments,
and various modifications may be made in the scopes disclosed in
claims. Embodiments obtained by appropriately combining technical
means respectively disclosed in different embodiments are also
included in the technical scope of the invention. Further, new
technical features may be formed by combining technical means
disclosed in the respective embodiments.
INDUSTRIAL APPLICABILITY
The present invention may be used in a light detecting device, a
solid-state image capturing apparatus, and a method for
manufacturing the same using an object under a normal-illuminance
environment, a low-illuminance environment, an
extremely-low-illuminance environment, and a 0 lux environment as a
target.
REFERENCE SIGNS LIST
1 LIGHT DETECTING DEVICE 1a, 1h LIGHT DETECTING DEVICE 1b to 1g
SOLID-STATE IMAGE CAPTURING APPARATUS 2 OPTICAL FILTER 2a to 2v
OPTICAL FILTER (FIRST OPTICAL FILTER, SECOND OPTICAL FILTER) 3
OPTICAL SENSOR 3a to 3d OPTICAL SENSOR 4 ANALYSIS UNIT 5a to 5g
COMPOSITE OPTICAL FILTER 6, 6a OPTICAL SENSOR FILTER 7 SPACER
MEMBER 7a to 7f SPACER MEMBER 8a COMPOSITE OPTICAL FILTER ARRAY
(FIRST COMPOSITE OPTICAL FILTER ARRAY) 9a, 9b LENS ARRAY 10a
ORGANIC FILTER ARRAY (SECOND COMPOSITE OPTICAL FILTER ARRAY) 11
SEMICONDUCTOR SUBSTRATE 12 PHOTOELECTRIC CONVERSION UNIT (FIRST
OPTICAL SENSOR, SECOND OPTICAL SENSOR) 13 CHARGE TRANSFER UNIT 14
TRANSFER ELECTRODE 15 LIGHT SHIELDING FILM 16 INSULATING FILM
(LAYER ADJACENT TO LOWERMOST LAYER) 17 INORGANIC FILM OPTICAL
FILTER 18, 18a FIRST OPTICAL FILTER 19, 19a SECOND OPTICAL FILTER
20, 20a THIRD OPTICAL FILTER 21 SPACER FILM (LAYER ADJACENT TO
UPPERMOST LAYER) 22 CONCENTRATING LENS 23 ORGANIC FILM OPTICAL
FILTER 24 ORGANIC FILM OPTICAL FILTER 25 ORGANIC FILM OPTICAL
FILTER 26 SECOND PLANARIZATION FILM 27 CONCENTRATING LENS S1 to S6
LAYERED MEMBER SP SPACE L1 to L4 LIGHT BEAM T INFORMATION W
WAVEFORM W1.about.W5 WAVEFORM H.sub.1.about.H.sub.j
HIGH-REFRACTIVE-INDEX MATERIAL (HIGH-REFRACTIVE-INDEX LAYER)
L.sub.0.about.L.sub.j LOW-REFRACTIVE-INDEX MATERIAL
(LOW-REFRACTIVE-INDEX LAYER, LOWERMOST LAYER, UPPERMOST LAYER)
* * * * *