U.S. patent number 10,280,141 [Application Number 15/820,241] was granted by the patent office on 2019-05-07 for crystalline compounds.
This patent grant is currently assigned to OTSUKA AMERICA PHARMACEUTICAL, INC.. The grantee listed for this patent is OTSUKA AMERICA PHARMACEUTICAL, INC.. Invention is credited to Franklin Bymaster, David A. Engers, Fred J. Fleitz, Venkat Kusukuntla, Anthony Alexander McKinney, Walter Piskorski, Valeriya Smolenskaya, Yonglai Yang.
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United States Patent |
10,280,141 |
McKinney , et al. |
May 7, 2019 |
Crystalline compounds
Abstract
The present invention relates to crystalline forms of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
and compositions comprising the same and methods of making and
using the same.
Inventors: |
McKinney; Anthony Alexander
(Newton Center, MA), Bymaster; Franklin (Brownsburg, IN),
Piskorski; Walter (Nashua, NH), Fleitz; Fred J.
(Germantown, WI), Yang; Yonglai (Hockessin, DE), Engers;
David A. (West Lafayette, IN), Smolenskaya; Valeriya
(West Lafayette, IN), Kusukuntla; Venkat (Germantown,
WI) |
Applicant: |
Name |
City |
State |
Country |
Type |
OTSUKA AMERICA PHARMACEUTICAL, INC. |
Rockville |
MD |
US |
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Assignee: |
OTSUKA AMERICA PHARMACEUTICAL,
INC. (Rockville, MD)
|
Family
ID: |
57546597 |
Appl.
No.: |
15/820,241 |
Filed: |
November 21, 2017 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20180194726 A1 |
Jul 12, 2018 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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15611580 |
Jun 1, 2017 |
9856217 |
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15186415 |
Jul 18, 2017 |
9708261 |
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62181174 |
Jun 17, 2015 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
A61P
25/00 (20180101); C07D 209/52 (20130101); A61P
25/30 (20180101); C07C 211/17 (20130101) |
Current International
Class: |
C07D
209/52 (20060101); C07C 211/17 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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WO 2004/043920 |
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May 2004 |
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WO |
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WO 2006/023659 |
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Mar 2006 |
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WO |
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WO 2007/014264 |
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Feb 2007 |
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WO |
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WO 2007/016155 |
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Feb 2007 |
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WO |
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WO 2008/013856 |
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Jan 2008 |
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WO |
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WO 2013/019271 |
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Feb 2013 |
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WO |
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WO 2015/089111 |
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Jun 2015 |
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WO |
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WO 2015/102826 |
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Jul 2015 |
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WO |
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WO 2016/205762 |
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Dec 2016 |
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WO |
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Other References
US. Appl. No. 15/102,871, filed Jun. 9, 2016, Neurovance, Inc.
cited by applicant .
U.S. Appl. No. 15/102,949, filed Jun. 9, 2016, Neurovance, Inc.
cited by applicant .
Bymaster, F. et al., "Pharmacological Characterization of the
Norepinephrine and Dopamine Reuptake Inhibitor EB-1020:
Implications for Treatment of Attention-Deficit Hyperactivity
Disorder," Synapse, 2012, 66, 522-532. cited by applicant .
Micheli, F. et al.,
"1-(Aryl)-6-[alkoxyalkyl]-3-azabicyclo[3.1.0]hexanes and
6-(Aryl)-6-[alkoxyalkyl]-3-azabicyclo[3.1.0]hexanes: A New Series
of Potent and Selective Triple Reuptake Inhibitors," Journal of
Medicinal Chemistry, 2010, 53 (6), 2534-2551. cited by applicant
.
Zhang, M. et al., "Studies on the Structure-Activity Relationship
of Bicifadine Analogs as Monoamine Transporter Inhibitors,"
Bioorganic & Medicinal Chemistry Letters, 2008, 18, 3682-3686.
cited by applicant .
Partial supplementary European search report and provisional
opinion for European Patent Application No. 16812592.0 dated Oct.
18, 2018. cited by applicant .
Extended European search report for European Patent Application No.
16812592.0 issued Feb. 12, 2019, 9 pages. cited by
applicant.
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Primary Examiner: Hui; San Ming R
Attorney, Agent or Firm: Hoxie & Associates LLC
Parent Case Text
This application is a continuation of U.S. patent application Ser.
No. 15/611,580 filed Jun. 1, 2017 (now U.S. Pat. No. 9,856,217),
which is a continuation of U.S. patent application Ser. No.
15/186,415 filed Jun. 17, 2016 (now U.S. Pat. No. 9,708,261), which
claims priority to U.S. Provisional Application No. 62/181,174
filed Jun. 17, 2015, the contents of each of which are hereby
incorporated by reference.
Claims
The invention claimed is:
1. A pharmaceutical composition, wherein the pharmaceutical
composition comprises 100 mg to 500 mg of Crystalline Form A of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
and a pharmaceutically acceptable diluent or carrier, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values of 5.7, 5.4, 5.2, 4.8,
4.6, 4.3, 3.9, and 3.5.
2. The pharmaceutical composition of claim 1, wherein the
pharmaceutical composition comprises 100 mg to 400 mg of
Crystalline Form A.
3. The pharmaceutical composition of claim 2, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values of 7.2, 6.4, 5.7, 5.4,
5.2, 4.9, 4.8, 4.6, 4.3, 3.9, and 3.5.
4. The pharmaceutical composition of claim 2, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values of 12.9, 7.2, 6.4, 6.1,
5.7, 5.4, 5.2, 4.9, 4.8, 4.6, 4.4, 4.3, 4.2, 4.1, 3.9, 3.6, 3.5,
3.4, and 3.2.
5. The pharmaceutical composition of claim 1, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern comprising 2-theta (.degree.) values of 12.3, 13.8, 15.4,
16.6, 17.2, 18.2, 18.5, 19.5, 20.5, 20.7, 22.9, and 25.7, wherein
the XRPD is measured using an incident beam of Cu K.alpha.
radiation of wavelength 1.54059 .ANG..
6. The pharmaceutical composition of claim 1, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern comprising 2-theta (.degree.) values of 6.9, 12.3, 13.8,
14.5, 15.4, 16.6, 17.2, 18.2, 18.5, 19.5, 20.1, 20.5, 20.7, 21.0,
21.5, 22.9, 24.7, 25.2, 25.4, 25.7, 26.4, 27.5, and 27.8, wherein
the XRPD is measured using an incident beam of Cu K.alpha.
radiation of wavelength 1.54059 .ANG..
7. The pharmaceutical composition of claim 2, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern measured using an incident beam of Cu K.alpha. radiation of
wavelength 1.54059 .ANG. comprising five peaks selected from those
shown in FIG. 1.
8. The pharmaceutical composition of claim 2, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern measured using an incident beam of Cu K.alpha. radiation of
wavelength 1.54059 .ANG. comprising nine peaks selected from those
shown in FIG. 1.
9. The pharmaceutical composition of claim 2, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern measured using an incident beam of Cu K.alpha. radiation of
wavelength 1.54059 .ANG. substantially as shown in FIG. 1.
10. The pharmaceutical composition of claim 1, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values selected from Table A,
B, and C below: TABLE-US-00041 TABLE A .degree.2.theta. d space
(.ANG.) Intensity (%) 15.42 .+-. 0.20 5.741 .+-. 0.074 26 16.55
.+-. 0.20 5.352 .+-. 0.064 40 17.15 .+-. 0.20 5.167 .+-. 0.060 29
18.50 .+-. 0.20 4.792 .+-. 0.051 100 19.45 .+-. 0.20 4.560 .+-.
0.046 38 20.46 .+-. 0.20 4.338 .+-. 0.042 43 20.68 .+-. 0.20 4.291
.+-. 0.041 80 22.90 .+-. 0.20 3.880 .+-. 0.033 22 25.69 .+-. 0.20
3.466 .+-. 0.027 70
TABLE-US-00042 TABLE B .degree.2.theta. d space (.ANG.) Intensity
(%) 12.26 .+-. 0.20 7.211 .+-. 0.117 22 13.78 .+-. 0.20 6.421 .+-.
0.093 36 15.42 .+-. 0.20 5.741 .+-. 0.074 26 16.55 .+-. 0.20 5.352
.+-. 0.064 40 17.15 .+-. 0.20 5.167 .+-. 0.060 29 18.19 .+-. 0.20
4.873 .+-. 0.053 100 18.50 .+-. 0.20 4.792 .+-. 0.051 100 19.45
.+-. 0.20 4.560 .+-. 0.046 38 20.46 .+-. 0.20 4.338 .+-. 0.042 43
20.68 .+-. 0.20 4.291 .+-. 0.041 80 22.90 .+-. 0.20 3.880 .+-.
0.033 22 25.69 .+-. 0.20 3.466 .+-. 0.027 70
TABLE-US-00043 TABLE C .degree.2.theta. d space (.ANG.) Intensity
(%) 6.87 .+-. 0.20 12.859 .+-. 0.374 6 12.26 .+-. 0.20 7.211 .+-.
0.117 22 13.78 .+-. 0.20 6.421 .+-. 0.093 36 14.49 .+-. 0.20 6.106
.+-. 0.084 6 15.42 .+-. 0.20 5.741 .+-. 0.074 26 16.55 .+-. 0.20
5.352 .+-. 0.064 40 17.15 .+-. 0.20 5.167 .+-. 0.060 29 18.19 .+-.
0.20 4.873 .+-. 0.053 100 18.50 .+-. 0.20 4.792 .+-. 0.051 100
19.45 .+-. 0.20 4.560 .+-. 0.046 38 20.06 .+-. 0.20 4.422 .+-.
0.044 9 20.46 .+-. 0.20 4.338 .+-. 0.042 43 20.68 .+-. 0.20 4.291
.+-. 0.041 80 20.96 .+-. 0.20 4.236 .+-. 0.040 11 21.54 .+-. 0.20
4.123 .+-. 0.038 10 22.90 .+-. 0.20 3.880 .+-. 0.033 22 24.69 .+-.
0.20 3.602 .+-. 0.029 3 25.17 .+-. 0.20 3.535 .+-. 0.028 14 25.44
.+-. 0.20 3.499 .+-. 0.027 13 25.69 .+-. 0.20 3.466 .+-. 0.027 70
26.36 .+-. 0.20 3.378 .+-. 0.025 13 27.52 .+-. 0.20 3.239 .+-.
0.023 23 27.76 .+-. 0.20 3.211 .+-. 0.023 7.
11. The pharmaceutical composition of claim 2, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern measured using an incident beam of Cu K.alpha. radiation of
wavelength 1.54059 .ANG. comprising five peaks selected from those
shown in FIG. 35, FIG. 37, or FIG. 47.
12. The pharmaceutical composition of claim 2, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern measured using an incident beam of Cu K.alpha. radiation of
wavelength 1.54059 .ANG. comprising nine peaks selected from those
shown in FIG. 35, FIG. 37, or FIG. 47.
13. The pharmaceutical composition of claim 2, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern measured using an incident beam of Cu K.alpha. radiation of
wavelength 1.54059 .ANG. substantially as shown in FIG. 35, FIG.
37, or FIG. 47.
14. A pharmaceutical composition, wherein the pharmaceutical
composition comprises 100 mg to 500 mg of Crystalline Form B of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
and a pharmaceutically acceptable diluent or carrier, wherein the
Crystalline Form B exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values of 14.6, 5.1, 4.7, 4.6,
and 3.6.
15. The pharmaceutical composition of claim 14, wherein the
pharmaceutical composition comprises 100 mg to 400 mg of
Crystalline Form B.
16. The pharmaceutical composition of claim 15, wherein the
Crystalline Form B exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values of 14.6, 6.7, 5.1, 4.7,
4.6, 3.8, 3.7, 3.6, and 3.2.
17. The pharmaceutical composition of claim 15, wherein the
Crystalline Form B exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values of 14.6, 7.3, 6.7, 6.0,
5.9, 5.5, 5.2, 5.1, 4.9, 4.7, 4.6, 4.5, 4.2, 4.1, 3.9, 3.8, 3.7,
3.6, 3.5, 3.4, 3.3, 3.2, 3.1, and 3.0.
18. The pharmaceutical composition of claim 15, wherein the
Crystalline Form B exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values selected from Table D,
E, and F below: TABLE-US-00044 TABLE D .degree.2.theta. d space
(.ANG.) Intensity (%) 6.04 .+-. 0.20 14.620 .+-. 0.484 13 17.41
.+-. 0.20 5.089 .+-. 0.058 14 18.94 .+-. 0.20 4.681 .+-. 0.049 79
19.19 .+-. 0.20 4.622 .+-. 0.048 100 24.39 .+-. 0.20 3.646 .+-.
0.029 23
TABLE-US-00045 TABLE E .degree.2.theta. d space (.ANG.) Intensity
(%) 6.04 .+-. 0.20 14.620 .+-. 0.484 13 13.21 .+-. 0.20 6.699 .+-.
0.101 21 17.41 .+-. 0.20 5.089 .+-. 0.058 14 18.94 .+-. 0.20 4.681
.+-. 0.049 79 19.19 .+-. 0.20 4.622 .+-. 0.048 100 23.59 .+-. 0.20
3.769 .+-. 0.032 16 23.79 .+-. 0.20 3.737 .+-. 0.031 43 24.39 .+-.
0.20 3.646 .+-. 0.029 23 28.15 .+-. 0.20 3.168 .+-. 0.022 24
TABLE-US-00046 TABLE F .degree.2.theta. d space (.ANG.) Intensity
(%) 6.04 .+-. 0.20 14.620 .+-. 0.484 13 12.12 .+-. 0.20 7.296 .+-.
0.120 6 13.21 .+-. 0.20 6.699 .+-. 0.101 21 14.86 .+-. 0.20 5.958
.+-. 0.080 8 15.13 .+-. 0.20 5.853 .+-. 0.077 5 16.02 .+-. 0.20
5.529 .+-. 0.069 1 16.90 .+-. 0.20 5.242 .+-. 0.062 4 17.41 .+-.
0.20 5.089 .+-. 0.058 14 18.23 .+-. 0.20 4.861 .+-. 0.053 10 18.94
.+-. 0.20 4.681 .+-. 0.049 79 19.19 .+-. 0.20 4.622 .+-. 0.048 100
19.91 .+-. 0.20 4.457 .+-. 0.044 4 21.05 .+-. 0.20 4.217 .+-. 0.040
11 21.27 .+-. 0.20 4.173 .+-. 0.039 2 21.74 .+-. 0.20 4.085 .+-.
0.037 4 22.55 .+-. 0.20 3.939 .+-. 0.034 6 23.59 .+-. 0.20 3.769
.+-. 0.032 16 23.79 .+-. 0.20 3.737 .+-. 0.031 43 24.39 .+-. 0.20
3.646 .+-. 0.029 23 25.34 .+-. 0.20 3.512 .+-. 0.027 1 26.06 .+-.
0.20 3.416 .+-. 0.026 2 26.61 .+-. 0.20 3.347 .+-. 0.025 1 27.15
.+-. 0.20 3.282 .+-. 0.024 2 28.15 .+-. 0.20 3.168 .+-. 0.022 24
28.66 .+-. 0.20 3.112 .+-. 0.021 13 29.47 .+-. 0.20 3.028 .+-.
0.020 13.
19. The pharmaceutical composition of claim 15, wherein the
Crystalline Form B exhibits an X-ray powder diffraction (XRPD)
pattern measured using an incident beam of Cu K.alpha. radiation of
wavelength 1.54059 .ANG. comprising five peaks selected from those
shown in FIG. 40 or FIG. 48.
20. The pharmaceutical composition of claim 15, wherein the
Crystalline Form B exhibits an X-ray powder diffraction (XRPD)
pattern measured using an incident beam of Cu K.alpha. radiation of
wavelength 1.54059 .ANG. substantially as shown in FIG. 40 or FIG.
48.
21. A method for treatment of attention deficit hyperactivity
disorder in a patient in need thereof, wherein the method comprises
administering to the patient a therapeutically effective amount of
a pharmaceutical composition, wherein the pharmaceutical
composition comprises 100 mg to 500 mg of Crystalline Form A of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
and a pharmaceutically acceptable diluent or carrier, wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values of 5.7, 5.4, 5.2, 4.8,
4.6, 4.3, 3.9, and 3.5.
22. The method of claim 21, wherein the pharmaceutical composition
comprises 100 mg to 400 mg of Crystalline Form A.
23. The method of claim 22, wherein the attention deficit
hyperactivity disorder is co-morbid with depression, substance
abuse, or anxiety.
24. The method of claim 23, wherein the attention deficit
hyperactivity disorder is co-morbid with substance abuse.
25. A method for treatment of attention deficit hyperactivity
disorder in a patient in need thereof, wherein the method comprises
administering to the patient a therapeutically effective amount of
a pharmaceutical composition, wherein the pharmaceutical
composition comprises 100 mg to 500 mg of Crystalline Form B of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
and a pharmaceutically acceptable diluent or carrier, wherein the
Crystalline Form B exhibits an X-ray powder diffraction (XRPD)
pattern comprising d-spacing (.ANG.) values of 14.6, 5.1, 4.7, 4.6,
and 3.6.
26. The method of claim 25, wherein the pharmaceutical composition
comprises 100 mg to 400 mg of Crystalline Form B.
27. The method of claim 26, wherein the attention deficit
hyperactivity disorder is co-morbid with depression, substance
abuse, or anxiety.
28. The method of claim 27, wherein the attention deficit
hyperactivity disorder is co-morbid with substance abuse.
29. The pharmaceutical composition of claim 1, wherein the
Crystalline Form A comprises less than 5 wt. % of any other
crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
30. The pharmaceutical composition of claim 1, wherein the
Crystalline Form A comprises less than 1 wt. % of any other
crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
31. The pharmaceutical composition of claim 4, wherein the
Crystalline Form A comprises less than 5 wt. % of any other
crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
32. The pharmaceutical composition of claim 4, wherein the
Crystalline Form A comprises less than 1 wt. % of any other
crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
33. The pharmaceutical composition of claim 5, wherein the
Crystalline Form A comprises less than 5 wt. % of any other
crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
34. The pharmaceutical composition of claim 5, wherein the
Crystalline Form A comprises less than 1 wt. % of any other
crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
35. The pharmaceutical composition of claim 14, wherein the
Crystalline Form B comprises less than 5 wt. % of any other
crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
36. The pharmaceutical composition of claim 14, wherein the
Crystalline Form B comprises less than 1 wt. % of any other
crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
37. The method of claim 21, wherein the Crystalline Form A
comprises less than 5 wt. % of any other crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
38. The method of claim 21, wherein the Crystalline Form A
comprises less than 1 wt. % of any other crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
39. The method of claim 25, wherein the Crystalline Form B
comprises less than 5 wt. % of any other crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
40. The method of claim 25, wherein the Crystalline Form B
comprises less than 1 wt. % of any other crystalline form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
Description
FIELD OF THE INVENTION
The present invention relates to crystalline forms of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
and compositions comprising the same and methods of making and
using the same.
BACKGROUND OF THE INVENTION
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane, also known
as (+)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane, is a compound
useful as an unbalanced triple reuptake inhibitor (TRI), most
potent towards norepinephrine reuptake (NE), one-sixth as potent
towards dopamine reuptake (DA), and one-fourteenth as much towards
serotonin reuptake (5-HT). This compound and its utility are
disclosed in more detail in U.S. Patent Publication No.
2007/0082940, the contents of which are hereby incorporated by
reference in their entirety.
Active pharmaceutical ingredients can exist in different physical
forms (e.g., liquid or solid in different crystalline, amorphous,
hydrate, or solvate forms), which can vary the processability,
stability, solubility, bioavailability, pharmacokinetics
(absorption, distribution, metabolism, excretion, or the like),
and/or bioequivalency of the active pharmaceutical ingredient and
pharmaceutical compositions comprising it. Whether a compound will
exist in a particular polymorph form is unpredictable. It is
important in pharmaceutical development to generate and identify
advantageous physical forms (e.g., free base or salt in solid,
liquid, crystalline, hydrate, solvate, or amorphous forms) of
active pharmaceutical ingredients. Therefore, there remains a need
for particular polymorph forms of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane.
SUMMARY OF THE INVENTION
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane, also known
as (+)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane ("the
Compound") is shown as Formula I below:
##STR00001##
The inventors have found particular polymorphs of the Compound in
hydrochloric acid addition salt form. These particular polymorphs
have different stability and dissolution profiles and are
especially advantageous in the preparation of galenic formulations
of various and diverse kind, especially Crystalline Form A as
described below. Therefore, in the first aspect, the invention
provides crystalline forms of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g.: 1.1 Crystalline Form A of the Compound in
hydrochloric acid addition salt form
((1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride) ("Crystalline Form A"). 1.2 Formula 1.1 wherein the
Crystalline Form A belongs to the P2.sub.12.sub.12.sub.1 space
group and has the following unit cell parameters: a=5.7779(2)
.ANG., b=8.6633(2) .ANG., c=25.7280(8) .ANG.,
.alpha.=.beta.=.gamma.=90.degree.. 1.3 Formula 1.1 wherein the
Crystalline Form A belongs to the P2.sub.12.sub.12.sub.1 space
group and has any combination of the following unit cell
parameters: a=5-7 .ANG., e.g., 6 .ANG., e.g., 5.6-5.9 .ANG., e.g.,
5.7-5.8 .ANG., e.g., 5.8 .ANG., e.g., 5.78, e.g., 5.778 .ANG.;
b=8-10 .ANG., e.g., 9 .ANG., e.g., 8.5-8.8 .ANG., e.g., 8.6-8.7
.ANG., e.g., 8.7 .ANG., e.g., 8.66 .ANG., e.g., 8.663 .ANG.;
c=25-27 .ANG., e.g., 26 .ANG., e.g., 25.6-25.9 .ANG., e.g.,
25.7-25.8 .ANG., e.g., 25.7-25.8 .ANG., e.g., 25.73 .ANG., e.g.,
25.728 .ANG.; and .alpha.=.beta.=.gamma.=90.degree.. 1.4 Any of
formulae 1.1-1.3 wherein the Crystalline Form A has a calculated
volume of V=1287.83(7) .ANG..sup.3. 1.5 Any of formulae 1.1-1.4
wherein the crystal structure of the Crystalline Form A is obtained
with a crystal having approximate dimensions of 0.38 mm.times.0.30
mm.times.0.18 mm, e.g., a colorless plate having approximate
dimensions of 0.38 mm.times.0.30 mm.times.0.18 mm. 1.6 Any of
formulae 1.1-1.5 wherein the crystal structure of the Crystalline
Form A is obtained with Mo K.alpha. radiation, e.g., Mo K.alpha.
radiation having .lamda.=0.71073 .ANG.. 1.7 Any of formulae 1.1-1.6
wherein the crystal structure of the Crystalline Form A is obtained
at 150 K. 1.8 Any of formulae 1.1-1.7 wherein the Crystalline Form
A has a single crystal structure represented by the ORTEP drawing
of FIG. 18. 1.9 Any of formulae 1.1-1.8 wherein the Crystalline
Form A has a calculated XRPD pattern as show in FIG. 23. 1.10 Any
of formulae 1.1-1.9 wherein the Crystalline Form A exhibits an XRPD
pattern comprising at least three, e.g., at least five, 2-theta
(.degree.) values selected from the group consisting of 15.4, 16.6,
17.2, 18.5, 19.5, 20.5, 20.7, 22.9, and 25.7, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.11 Any of formulae 1.1-1.10 wherein the
Crystalline Form A exhibits an XRPD pattern comprising 2-theta
(.degree.) values of 15.4, 16.6, 17.2, 18.5, 19.5, 20.5, 20.7,
22.9, and 25.7, wherein the XRPD is measured using an incident beam
of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG.. 1.12
Any of formulae 1.1-1.11 wherein the Crystalline Form A exhibits an
XRPD pattern having characteristic 2-theta (.degree.) values of
15.4, 16.6, 17.2, 18.5, 19.5, 20.5, 20.7, 22.9, and 25.7, wherein
the XRPD is measured using an incident beam of Cu radiation, e.g.,
Cu K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.13 Any of formulae
1.1-1.12 wherein the Crystalline Form A exhibits an XRPD pattern
comprising at least three, e.g., at least five, 2-theta (.degree.)
values selected from the group consisting 15.42, 16.55, 17.15,
18.50, 19.45, 20.46, 20.68, 22.90, and 25.69, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.14 Any of formulae 1.1-1.13 wherein the
Crystalline Form A exhibits an XRPD pattern comprising 2-theta
(.degree.) values of 15.42, 16.55, 17.15, 18.50, 19.45, 20.46,
20.68, 22.90, and 25.69, wherein the XRPD is measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation. 1.15
Any of formulae 1.1-1.14 wherein the Crystalline Form A exhibits an
XRPD pattern having characteristic 2-theta (.degree.) values of
15.42, 16.55, 17.15, 18.50, 19.45, 20.46, 20.68, 22.90, and 25.69,
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.16 Any of
formulae 1.1-1.15 wherein the Crystalline Form A exhibits an XRPD
pattern comprising at least three, e.g., at least five, 2-theta
(.degree.) values selected from those set forth in Table A
below:
TABLE-US-00001 TABLE A .degree.2.theta. d space (.ANG.) Intensity
(%) 15.42 .+-. 0.20 5.741 .+-. 0.074 26 16.55 .+-. 0.20 5.352 .+-.
0.064 40 17.15 .+-. 0.20 5.167 .+-. 0.060 29 18.50 .+-. 0.20 4.792
.+-. 0.051 100 19.45 .+-. 0.20 4.560 .+-. 0.046 38 20.46 .+-. 0.20
4.338 .+-. 0.042 43 20.68 .+-. 0.20 4.291 .+-. 0.041 80 22.90 .+-.
0.20 3.880 .+-. 0.033 22 25.69 .+-. 0.20 3.466 .+-. 0.027 70
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.17 Any of
formulae 1.1-1.16 wherein the Crystalline Form A exhibits an XRPD
pattern comprising the 2-theta (.degree.) values set forth in Table
A of formula 1.16, wherein the XRPD is measured using an incident
beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein
the XRPD is measured using radiation of wavelength 1.54059 .ANG..
1.18 Any of formulae 1.1-1.17 wherein the Crystalline Form A
exhibits an XRPD pattern having characteristic 2-theta (.degree.)
values as set forth in Table A of formula 1.16, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.19 Any of formulae 1.1-1.18 wherein the
Crystalline Form A exhibits an XRPD pattern comprising at least
three, e.g., at least five, e.g. at least ten, 2-theta (.degree.)
values selected from the group consisting of 12.3, 13.8, 15.4,
16.6, 17.2, 18.2, 18.5, 19.5, 20.5, 20.7, 22.9, and 25.7, wherein
the XRPD is measured using an incident beam of Cu radiation, e.g.,
Cu K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.20 Any of formulae
1.1-1.19 wherein the Crystalline Form A exhibits an XRPD pattern
comprising 2-theta (.degree.) values of 12.3, 13.8, 15.4, 16.6,
17.2, 18.2, 18.5, 19.5, 20.5, 20.7, 22.9, and 25.7, wherein the
XRPD is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.21 Any of formulae
1.1-1.20 wherein the Crystalline Form A exhibits an XRPD pattern
having representative 2-theta (.degree.) values of 12.3, 13.8,
15.4, 16.6, 17.2, 18.2, 18.5, 19.5, 20.5, 20.7, 22.9, and 25.7,
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.22 Any of
formulae 1.1-1.21 wherein the Crystalline Form A exhibits an XRPD
pattern comprising at least three, e.g., at least five, e.g. at
least ten, 2-theta (.degree.) values selected from the group
consisting of 12.26, 13.78, 15.42, 16.55, 17.15, 18.19, 18.50,
19.45, 20.46, 20.68, 22.90, and 25.69, wherein the XRPD is measured
using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.23 Any of formulae 1.1-1.22 wherein the
Crystalline Form A exhibits an XRPD pattern comprising 2-theta
(.degree.) values of 12.26, 13.78, 15.42, 16.55, 17.15, 18.19,
18.50, 19.45, 20.46, 20.68, 22.90, and 25.69, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.24 Any of formulae 1.1-1.23 wherein the
Crystalline Form A exhibits an XRPD pattern having representative
2-theta (.degree.) values of 12.26, 13.78, 15.42, 16.55, 17.15,
18.19, 18.50, 19.45, 20.46, 20.68, 22.90, and 25.69, wherein the
XRPD is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.25 Any of formulae
1.1-1.24 wherein the Crystalline Form A exhibits an XRPD pattern
comprising at least three, e.g., at least five, e.g., at least ten,
2-theta (.degree.) values selected from those set forth in Table B
below:
TABLE-US-00002 TABLE B .degree.2.theta. d space (.ANG.) Intensity
(%) 12.26 .+-. 0.20 7.211 .+-. 0.117 22 13.78 .+-. 0.20 6.421 .+-.
0.093 36 15.42 .+-. 0.20 5.741 .+-. 0.074 26 16.55 .+-. 0.20 5.352
.+-. 0.064 40 17.15 .+-. 0.20 5.167 .+-. 0.060 29 18.19 .+-. 0.20
4.873 .+-. 0.053 100 18.50 .+-. 0.20 4.792 .+-. 0.051 100 19.45
.+-. 0.20 4.560 .+-. 0.046 38 20.46 .+-. 0.20 4.338 .+-. 0.042 43
20.68 .+-. 0.20 4.291 .+-. 0.041 80 22.90 .+-. 0.20 3.880 .+-.
0.033 22 25.69 .+-. 0.20 3.466 .+-. 0.027 70
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.26 Any of
formulae 1.1-1.25 wherein the Crystalline Form A exhibits an XRPD
pattern comprising the 2-theta (.degree.) values set forth in Table
B of formula 1.25, wherein the XRPD is measured using an incident
beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein
the XRPD is measured using radiation of wavelength 1.54059 .ANG..
1.27 Any of formulae 1.1-1.26 wherein the Crystalline Form A
exhibits an XRPD pattern having representative 2-theta (.degree.)
values as set forth in Table B of formula 1.25, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.28 Any of formulae 1.1-1.27 wherein the
Crystalline Form A exhibits an XRPD pattern comprising at least
three, e.g., at least five, e.g., at least nine, e.g., at least
ten, e.g., at least twelve, e.g., at least fifteen, e.g., at least
twenty, 2-theta (.degree.) values selected from the group
consisting of 6.9, 12.3, 13.8, 14.5, 15.4, 16.6, 17.2, 18.2, 18.5,
19.5, 20.1, 20.5, 20.7, 21.0, 21.5, 22.9, 24.7, 25.2, 25.4, 25.7,
26.4, 27.5, and 27.8, wherein the XRPD is measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.54059
.ANG.. 1.29 Any of formulae 1.1-1.28 wherein the Crystalline Form A
exhibits an XRPD pattern comprising the following 2-theta
(.degree.) values: 6.9, 12.3, 13.8, 14.5, 15.4, 16.6, 17.2, 18.2,
18.5, 19.5, 20.1, 20.5, 20.7, 21.0, 21.5, 22.9, 24.7, 25.2, 25.4,
25.7, 26.4, 27.5, and 27.8, wherein the XRPD is measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.54059
.ANG.. 1.30 Any of formulae 1.1-1.29 wherein the Crystalline Form A
exhibits an XRPD pattern comprising at least three, e.g., at least
five, e.g., at least nine, e.g., at least ten, e.g., at least
twelve, e.g., at least fifteen, e.g., at least twenty, 2-theta
(.degree.) values selected from the group consisting of 6.87,
12.26, 13.78, 14.49, 15.42, 16.55, 17.15, 18.19, 18.50, 19.45,
20.06, 20.46, 20.68, 20.96, 21.54, 22.90, 24.69, 25.17, 25.44,
25.69, 26.36, 27.52, and 27.76, wherein the XRPD is measured using
an incident beam of Cu radiation, e.g., Cu K.alpha. radiation,
e.g., wherein the XRPD is measured using radiation of wavelength
1.54059 .ANG.. 1.31 Any of formulae 1.1-1.30 wherein the
Crystalline Form A exhibits an XRPD pattern comprising the
following 2-theta (.degree.) values: 6.87, 12.26, 13.78, 14.49,
15.42, 16.55, 17.15, 18.19, 18.50, 19.45, 20.06, 20.46, 20.68,
20.96, 21.54, 22.90, 24.69, 25.17, 25.44, 25.69, 26.36, 27.52, and
27.76, wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.32 Any of
formulae 1.1-1.31 wherein the Crystalline Form A exhibits an XRPD
pattern comprising at least three, e.g., at least five, e.g., at
least nine, e.g., at least ten, e.g., at least twelve, e.g., at
least fifteen, e.g., at least twenty, 2-theta (.degree.) values
selected from those set forth in Table C below:
TABLE-US-00003 TABLE C .degree.2.theta. d space (.ANG.) Intensity
(%) 6.87 .+-. 0.20 12.859 .+-. 0.374 6 12.26 .+-. 0.20 7.211 .+-.
0.117 22 13.78 .+-. 0.20 6.421 .+-. 0.093 36 14.49 .+-. 0.20 6.106
.+-. 0.084 6 15.42 .+-. 0.20 5.741 .+-. 0.074 26 16.55 .+-. 0.20
5.352 .+-. 0.064 40 17.15 .+-. 0.20 5.167 .+-. 0.060 29 18.19 .+-.
0.20 4.873 .+-. 0.053 100 18.50 .+-. 0.20 4.792 .+-. 0.051 100
19.45 .+-. 0.20 4.560 .+-. 0.046 38 20.06 .+-. 0.20 4.422 .+-.
0.044 9 20.46 .+-. 0.20 4.338 .+-. 0.042 43 20.68 .+-. 0.20 4.291
.+-. 0.041 80 20.96 .+-. 0.20 4.236 .+-. 0.040 11 21.54 .+-. 0.20
4.123 .+-. 0.038 10 22.90 .+-. 0.20 3.880 .+-. 0.033 22 24.69 .+-.
0.20 3.602 .+-. 0.029 3 25.17 .+-. 0.20 3.535 .+-. 0.028 14 25.44
.+-. 0.20 3.499 .+-. 0.027 13 25.69 .+-. 0.20 3.466 .+-. 0.027 70
26.36 .+-. 0.20 3.378 .+-. 0.025 13 27.52 .+-. 0.20 3.239 .+-.
0.023 23 27.76 .+-. 0.20 3.211 .+-. 0.023 7
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.33 Any of
formulae 1.1-1.32 wherein the Crystalline Form A exhibits an XRPD
pattern comprising the 2-theta (.degree.) values set forth in Table
C of formula 1.32, wherein the XRPD is measured using an incident
beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein
the XRPD is measured using radiation of wavelength 1.54059 .ANG..
1.34 Any of formulae 1.1-1.33 wherein the Crystalline Form A
exhibits an XRPD pattern comprising at least three, e.g., at least
five, d-spacing (.ANG.) values selected from the group consisting
of 5.7, 5.4, 5.2, 4.8, 4.6, 4.3, 3.9, and 3.5. 1.35 Any of formulae
1.1-1.34 wherein the Crystalline Form A exhibits an XRPD pattern
comprising d-spacing (.ANG.) values of 5.7, 5.4, 5.2, 4.8, 4.6,
4.3, 3.9, and 3.5. 1.36 Any of formulae 1.1-1.35 wherein the
Crystalline Form A exhibits an XRPD pattern comprising at least
three, e.g., at least five, d-spacing (.ANG.) values selected from
the group consisting of 5.74, 5.35, 5.17, 4.79, 4.56, 4.34, 4.29,
3.88, and 3.47. 1.37 Any of formulae 1.1-1.36 wherein the
Crystalline Form A exhibits an XRPD pattern comprising d-spacing
(.ANG.) values of 5.74, 5.35, 5.17, 4.79, 4.56, 4.34, 4.29, 3.88,
and 3.47. 1.38 Any of formulae 1.1-1.37 wherein the Crystalline
Form A exhibits an XRPD pattern comprising at least three, e.g., at
least five, d-spacing (.ANG.) values selected from the group
consisting of 5.741, 5.352, 5.167, 4.792, 4.560, 4.338, 4.291,
3.880, and 3.466. 1.39 Any of formulae 1.1-1.38 wherein the
Crystalline Form A exhibits an XRPD pattern comprising d-spacing
(.ANG.) values of 5.741, 5.352, 5.167, 4.792, 4.560, 4.338, 4.291,
3.880, and 3.466. 1.40 Any of formulae 1.1-1.39 wherein the
Crystalline Form A exhibits an XRPD pattern comprising at least
three, e.g., at least five, d-spacing (.ANG.) values selected from
those set forth in Table A of formula 1.16. 1.41 Any of formulae
1.1-1.40 wherein the Crystalline Form A exhibits an XRPD pattern
comprising the d-spacing (.ANG.) values set forth in Table A of
formula 1.16. 1.42 Any of formulae 1.1-1.41 wherein the Crystalline
Form A exhibits an XRPD pattern comprising at least three, e.g., at
least five, e.g., at least ten, d-spacing (.ANG.) values selected
from the group consisting of 7.2, 6.4, 5.7, 5.4, 5.2, 4.9, 4.8,
4.6, 4.3, 3.9, and 3.5. 1.43 Any of formulae 1.1-1.42 wherein the
Crystalline Form A exhibits an XRPD pattern comprising d-spacing
(.ANG.) values of 7.2, 6.4, 5.7, 5.4, 5.2, 4.9, 4.8, 4.6, 4.3, 3.9,
and 3.5. 1.44 Any of formulae 1.1-1.43 wherein the Crystalline Form
A exhibits an XRPD pattern comprising at least three, e.g., at
least five, e.g., at least ten, d-spacing (.ANG.) values selected
from the group consisting of 7.21, 6.42, 5.74, 5.35, 5.17, 4.87,
4.79, 4.56, 4.34, 4.29, 3.88, and 3.47. 1.45 Any of formulae
1.1-1.44 wherein the Crystalline Form A exhibits an XRPD pattern
comprising d-spacing (.ANG.) values of 7.21, 6.42, 5.74, 5.35,
5.17, 4.87, 4.79, 4.56, 4.34, 4.29, 3.88, and 3.47. 1.46 Any of
formulae 1.1-1.45 wherein the Crystalline Form A exhibits an XRPD
pattern comprising at least three, e.g., at least five, e.g., at
least ten, d-spacing (.ANG.) values selected from the group
consisting of 7.211, 6.421, 5.741, 5.352, 5.167, 4.873, 4.792,
4.560, 4.338, 4.291, 3.880, and 3.466. 1.47 Any of formulae
1.1-1.46 wherein the Crystalline Form A exhibits an XRPD pattern
comprising d-spacing (.ANG.) values of 7.211, 6.421, 5.741, 5.352,
5.167, 4.873, 4.792, 4.560, 4.338, 4.291, 3.880, and 3.466. 1.48
Any of formulae 1.1-1.47 wherein the Crystalline Form A exhibits an
XRPD pattern comprising at least three, e.g., at least five, e.g.,
at least ten, d-spacing (.ANG.) values selected from those set
forth in Table B of formula 1.25. 1.49 Any of formulae 1.1-1.48
wherein the Crystalline Form A exhibits an XRPD pattern comprising
the d-spacing (.ANG.) values set forth in Table B of formula 1.25.
1.50 Any of formulae 1.1-1.49 wherein the Crystalline Form A
exhibits an XRPD pattern comprising at least three, e.g., at least
five, e.g., at least nine, e.g., at least ten, e.g., at least
twelve, e.g., at least fifteen, d-spacing (.ANG.) values selected
from the group consisting of 12.9, 7.2, 6.4, 6.1, 5.7, 5.4, 5.2,
4.9, 4.8, 4.6, 4.4, 4.3, 4.2, 4.1, 3.9, 3.6, 3.5, 3.4, and 3.2.
1.51 Any of formulae 1.1-1.50 wherein the Crystalline Form A
exhibits an XRPD pattern comprising d-spacing (.ANG.) values of
12.9, 7.2, 6.4, 6.1, 5.7, 5.4, 5.2, 4.9, 4.8, 4.6, 4.4, 4.3, 4.2,
4.1, 3.9, 3.6, 3.5, 3.4, and 3.2. 1.52 Any of formulae 1.1-1.51
wherein the Crystalline Form A exhibits an XRPD pattern comprising
at least three, e.g., at least five, e.g., at least nine, e.g., at
least ten, e.g., at least twelve, e.g., at least fifteen, e.g., at
least twenty, d-spacing (.ANG.) values selected from the group
consisting of 12.86, 7.21, 6.42, 6.11, 5.74, 5.35, 5.17, 4.87,
4.79, 4.56, 4.42, 4.34, 4.29, 4.24, 4.12, 3.88, 3.60, 3.54, 3.50,
3.47, 3.38, 3.24, and 3.21. 1.53 Any of formulae 1.1-1.52 wherein
the Crystalline Form A exhibits an XRPD pattern comprising
d-spacing (.ANG.) values of 12.86, 7.21, 6.42, 6.11, 5.74, 5.35,
5.17, 4.87, 4.79, 4.56, 4.42, 4.34, 4.29, 4.24, 4.12, 3.88, 3.60,
3.54, 3.50, 3.47, 3.38, 3.24, and 3.21. 1.54 Any of formulae
1.1-1.53 wherein the Crystalline Form A exhibits an XRPD pattern
comprising at least three, e.g., at least five, e.g., at least
nine, e.g., at least ten, e.g., at least twelve, e.g., at least
fifteen, e.g., at least twenty, d-spacing (.ANG.) values selected
from the group consisting of 12.859, 7.211, 6.421, 6.106, 5.741,
5.352, 5.167, 4.873, 4.792, 4.560, 4.422, 4.338, 4.291, 4.236,
4.123, 3.880, 3.602, 3.535, 3.499, 3.466, 3.378, 3.239, and 3.211.
1.55 Any of formulae 1.1-1.54 wherein the Crystalline Form A
exhibits an XRPD pattern comprising d-spacing (.ANG.) values of
12.859, 7.211, 6.421, 6.106, 5.741, 5.352, 5.167, 4.873, 4.792,
4.560, 4.422, 4.338, 4.291, 4.236, 4.123, 3.880, 3.602, 3.535,
3.499, 3.466, 3.378, 3.239, and 3.211. 1.56 Any of formulae
1.1-1.55 wherein the Crystalline Form A exhibits an XRPD pattern
comprising at least three, e.g., at least five, e.g., at least
nine, e.g., at least ten, e.g., at least twelve, e.g., at least
fifteen, e.g., at least twenty, d-spacing (.ANG.) values selected
from those set forth in Table C of formula 1.32. 1.57 Any of
formulae 1.1-1.56 wherein the Crystalline Form A exhibits an XRPD
pattern comprising the d-spacing (.ANG.) values set forth in Table
C of formula 1.32. 1.58 Any of formulae 1.1-1.57 wherein the
Crystalline Form A exhibits an XRPD pattern comprising
characteristic peaks of the XRPD pattern shown in FIG. 1, wherein
the XRPD is measured using Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.59 Any of formulae 1.1-1.58 wherein the
Crystalline Form A exhibits an XRPD pattern comprising
representative peaks of the XRPD pattern shown in FIG. 1, wherein
the XRPD is measured using Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.60 Any of formulae 1.1-1.59 wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern, e.g., an X-ray powder diffraction pattern measured using
an incident beam of Cu radiation, e.g., Cu K.alpha. radiation,
e.g., a high-resolution X-ray powder diffraction pattern measured
using an incident beam of Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG.,
comprising three peaks, in some embodiments, five peaks, selected
from those shown in FIG. 1. 1.61 Any of formulae 1.1-1.60 wherein
the Crystalline Form A exhibits an XRPD pattern, e.g., an XRPD
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., a high-resolution XRPD pattern measured
using an incident beam of Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG.,
comprising at least nine peaks, e.g., at least ten peaks, e.g., at
least twelve peaks, e.g., at least fifteen peaks, e.g., at least
twenty peaks, selected from those shown in FIG. 1. 1.62 Any of
formulae 1.1-1.61 wherein the Crystalline Form A exhibits an X-ray
powder diffraction (XRPD) pattern, e.g., an X-ray powder
diffraction pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG., substantially
as shown in FIG. 1. 1.63 Any of formulae 1.1-1.62 wherein the
Crystalline Form A exhibits an X-ray powder diffraction (XRPD)
pattern, e.g., an X-ray powder diffraction pattern measured using
an incident beam of Cu radiation, e.g., Cu K.alpha. radiation,
e.g., wherein the XRPD is measured using radiation of wavelength
1.54059 .ANG., as shown in FIG. 1. 1.64 Any of formulae 1.1-1.63
wherein the Crystalline Form A exhibits an XRPD pattern comprising
characteristic peaks of the XRPD pattern shown in any of FIGS. 1,
35, 37, and 47, e.g., FIG. 1, e.g., FIG. 35, e.g., FIG. 37, e.g.,
FIG. 47, wherein the XRPD is measured using Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.65 Any of formulae
1.1-1.64 wherein the Crystalline Form A exhibits an XRPD pattern
comprising representative peaks of the XRPD pattern shown in any of
FIGS. 1, 35, 37, and 47, e.g., FIG. 1, e.g., FIG. 35, e.g., FIG.
37, e.g., FIG. 47, wherein the XRPD is measured using Cu radiation,
e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is measured
using radiation of wavelength 1.54059 .ANG.. 1.66 Any of formulae
1.1-1.65 wherein the Crystalline Form A exhibits an XRPD pattern,
e.g., an XRPD pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., a high-resolution
XRPD pattern measured using an incident beam of Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG., comprising three peaks, in some
embodiments, five peaks, selected from those shown in any of FIGS.
1, 35, 37, and 47, e.g., FIG. 1, e.g., FIG. 35, e.g., FIG. 37,
e.g., FIG. 47. 1.67 Any of formulae 1.1-1.66 wherein the
Crystalline Form A exhibits an XRPD pattern, e.g., an XRPD pattern
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., a high-resolution XRPD pattern measured using an
incident beam of Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG., comprising at
least nine peaks, e.g., at least ten peaks, e.g., at least twelve
peaks, e.g., at least fifteen peaks, e.g., at least twenty peaks,
selected from those shown in any of FIGS. 1, 35, 37, and 47, e.g.,
FIG. 1, e.g., FIG. 35, e.g., FIG. 37, e.g., FIG. 47. 1.68 Any of
formulae 1.1-1.67 wherein the Crystalline Form A exhibits an XRPD
pattern, e.g., an XRPD pattern measured using an incident beam of
Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD
is measured using radiation of wavelength 1.54059 .ANG.,
substantially as shown in any of FIGS. 1, 35, 37, and 47, e.g.,
FIG. 1, e.g., FIG. 35, e.g., FIG. 37, e.g., FIG. 47. 1.69 Any of
formulae 1.1-1.68 wherein the Crystalline Form A exhibits an XRPD
pattern, e.g., an XRPD pattern measured using an incident beam of
Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD
is measured using radiation of wavelength 1.54059 .ANG., as shown
in any of FIGS. 1, 35, 37, and 47, e.g., FIG. 1, e.g., FIG. 35,
e.g., FIG. 37, e.g., FIG. 47. 1.70 Any of formulae 1.1-1.69 wherein
the Crystalline Form A exhibits a differential scanning calorimetry
(DSC) thermogram comprising an endothermic peak between 245.degree.
C. and 249.degree. C., e.g., between 245.degree. C. and 248.degree.
C., e.g., wherein the Crystalline Form A exhibits a differential
scanning calorimetry (DSC) thermogram comprising multiple, e.g.,
three, endotherms between 245.degree. C. and 249.degree. C., e.g.,
between 245.degree. C. and 248.degree. C., e.g., wherein the
Crystalline Form A exhibits a differential scanning calorimetry
(DSC) thermogram comprising an endothermic peak at 247.degree. C.
with an onset at 245.degree. C., an endothermic shoulder at
248.degree. C., and an endothermic peak at 248.degree. C. 1.71 Any
of formulae 1.1-1.70 wherein the Crystalline Form A exhibits a
differential scanning calorimetry (DSC) thermogram comprising an
endothermic peak at 247.degree. C., e.g., an endothermic peak at
247.degree. C. with an onset at 245.degree. C. 1.72 Any of formulae
1.1-1.71 wherein the Crystalline Form A exhibits a differential
scanning calorimetry (DSC) thermogram comprising an endothermic
peak at 248.degree. C. 1.73 Any of formulae 1.1-1.72 wherein the
Crystalline Form A exhibits a differential scanning calorimetry
(DSC) thermogram as shown in FIG. 2. 1.74 Any of formulae 1.1-1.73
wherein the Crystalline Form A exhibits a thermogravimetric
analysis (TGA) thermogram comprising 0.4% weight loss up to
200.degree. C. 1.75 Any of formulae 1.1-1.74 having a
thermogravimetric analysis (TGA) thermogram comprising an onset
decomposition temperature at 276.degree. C. 1.76 Any of formulae
1.1-1.75 wherein the Crystalline Form A exhibits a
thermogravimetric analysis (TGA) thermogram as shown in FIG. 2.
1.77 Any of formulae 1.1-1.76 wherein the Crystalline Form A
exhibits a dynamic vapor sorption/desporption isotherm as shown in
FIG. 3, e.g., a dynamic vapor sorption/desporption isotherm wherein
Crystalline Form A shows: a weight loss of 0.03% upon equilibration
at 5% RH; a weight gain of 0.10% from 5% to 95% RH; and a 0.10%
weight loss from 95% to 5% RH. 1.78 Crystalline Form B of the
Compound in hydrochloric acid addition salt form
((1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride) ("Crystalline Form B"). 1.79 Formula 1.78 wherein
the Crystalline Form B belongs to the P2.sub.12.sub.12.sub.1 space
group and has the following unit cell parameters: a=5.9055(2)
.ANG., b=7.4645(3) .ANG., c=29.1139(13) .ANG.,
.alpha.=.beta.=.gamma.=90.degree.. 1.80 Formula 1.78 wherein the
Crystalline Form B belongs to the P2.sub.12.sub.12.sub.1 space
group and has any combination of the following unit cell
parameters: a=5-7 .ANG., e.g., 6 .ANG., e.g., 5.7-6.1 .ANG., e.g.,
5.8-6.0 .ANG., e.g., 5.9 .ANG., e.g., 5.91, e.g., 5.906 .ANG.;
b=6-8 .ANG., e.g., 7 .ANG., e.g., 7.3-7.7 .ANG., e.g., 7.4-7.6
.ANG., e.g., 7.5 .ANG., e.g., 7.46 .ANG., e.g., 7.465 .ANG.;
c=28-30 .ANG., e.g., 29 .ANG., e.g., 28.9-29.3 .ANG., e.g.,
29.0-29.2 .ANG., e.g., 29.1 .ANG., e.g., 29.11 .ANG., e.g., 29.114
.ANG.; and .alpha.=.beta.=.gamma.=90.degree.. 1.81 Any of formulae
1.78-1.80 wherein the Crystalline Form B has a calculated volume of
V=1283.39(9) .ANG..sup.3. 1.82 Any of formulae 1.78-1.81 wherein
the crystal structure of the Crystalline Form B is obtained with a
crystal having approximate dimensions of 0.31 mm.times.0.21
mm.times.0.09 mm, e.g., a colorless plate having approximate
dimensions of 0.31 mm.times.0.21 mm.times.0.09 mm. 1.83 Any of
formulae 1.78-1.82 wherein the crystal structure of the Crystalline
Form B is obtained with Cu K.alpha. radiation, e.g., Cu K.alpha.
having .lamda.=1.54178 .ANG.. 1.84 Any of formulae 1.78-1.83
wherein the crystal structure of the Crystalline Form B is obtained
at 100(2) K. 1.85 Any of formulae 1.78-1.84 wherein the Crystalline
Form B has a single crystal structure represented by the atomic
displacement ellipsoid drawing of FIG. 24. 1.86 Any of formulae
1.78-1.85 wherein the Crystalline Form B has a calculated XRPD
pattern as shown in FIG. 32. 1.87 Any of formulae 1.78-1.86 wherein
the Crystalline Form B exhibits an XRPD pattern comprising at least
three 2-theta (.degree.) values selected from the group consisting
of 6.0, 17.4, 18.9, 19.2, and 24.4, wherein the XRPD is measured
using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.88 Any of formulae 1.78-1.87 wherein
the Crystalline Form B exhibits an XRPD pattern comprising 2-theta
(.degree.) values of 6.0, 17.4, 18.9, 19.2, and 24.4, wherein the
XRPD is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.89 Any of formulae
1.78-1.88 wherein the Crystalline Form B exhibits an XRPD pattern
having characteristic 2-theta (.degree.) values of 6.0, 17.4, 18.9,
19.2, and 24.4, wherein the XRPD is measured using an incident beam
of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG.. 1.90
Any of formulae 1.78-1.89 wherein the Crystalline Form B exhibits
an XRPD pattern comprising at least three 2-theta (.degree.) values
selected from the group consisting of 6.04, 17.41, 18.94, 19.19,
and 24.39, wherein the XRPD is measured using an incident beam of
Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD
is measured using radiation of wavelength 1.54059 .ANG.. 1.91 Any
of formulae 1.78-1.90 wherein the Crystalline Form B exhibits an
XRPD pattern comprising 2-theta (.degree.) values of 6.04, 17.41,
18.94, 19.19, and 24.39, wherein the XRPD is measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.54059
.ANG.. 1.92 Any of formulae 1.78-1.91 wherein the
Crystalline Form B exhibits an XRPD pattern having characteristic
2-theta (.degree.) values of 6.04, 17.41, 18.94, 19.19, and 24.39,
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.93 Any of
formulae 1.78-1.92 wherein the Crystalline Form B exhibits an XRPD
pattern comprising at least three 2-theta (.degree.) values
selected from those set forth in Table D below:
TABLE-US-00004 TABLE D .degree.2.theta. d space (.ANG.) Intensity
(%) 6.04 .+-. 0.20 14.620 .+-. 0.484 13 17.41 .+-. 0.20 5.089 .+-.
0.058 14 18.94 .+-. 0.20 4.681 .+-. 0.049 79 19.19 .+-. 0.20 4.622
.+-. 0.048 100 24.39 .+-. 0.20 3.646 .+-. 0.029 23
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.94 Any of
formulae 1.78-1.93 wherein the Crystalline Form B exhibits an XRPD
pattern comprising the 2-theta (.degree.) values set forth in Table
D of formula 1.93, wherein the XRPD is measured using an incident
beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein
the XRPD is measured using radiation of wavelength 1.54059 .ANG..
1.95 Any of formulae 1.78-1.94 wherein the Crystalline Form B
exhibits an XRPD pattern having characteristic 2-theta (.degree.)
values as set forth in Table D of formula 1.93, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.96 Any of formulae 1.78-1.95 wherein
the Crystalline Form B exhibits an XRPD pattern comprising at least
three, e.g., at least five, 2-theta (.degree.) values selected from
the group consisting of 6.0, 13.2, 17.4, 18.9, 19.2, 23.6, 23.8,
24.4, and 28.2, wherein the XRPD is measured using an incident beam
of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG.. 1.97
Any of formulae 1.78-1.96 wherein the Crystalline Form B exhibits
an XRPD pattern comprising 2-theta (.degree.) values of 6.0, 13.2,
17.4, 18.9, 19.2, 23.6, 23.8, 24.4, and 28.2, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.98 Any of formulae 1.78-1.97 wherein
the Crystalline Form B exhibits an XRPD pattern having
representative 2-theta (.degree.) values of 6.0, 13.2, 17.4, 18.9,
19.2, 23.6, 23.8, 24.4, and 28.2, wherein the XRPD is measured
using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.99 Any of formulae 1.78-1.98 wherein
the Crystalline Form B exhibits an XRPD pattern comprising at least
three, e.g., at least five, 2-theta (.degree.) values selected from
the group consisting of 6.04, 13.21, 17.41, 18.94, 19.19, 23.59,
23.79, 24.39, and 28.15, wherein the XRPD is measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.54059
.ANG.. 1.100 Any of formulae 1.78-1.99 wherein the Crystalline Form
B exhibits an XRPD pattern comprising 2-theta (.degree.) values of
6.04, 13.21, 17.41, 18.94, 19.19, 23.59, 23.79, 24.39, and 28.15,
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.101 Any of
formulae 1.78-1.100 wherein the Crystalline Form B exhibits an XRPD
pattern having representative 2-theta (.degree.) values of 6.04,
13.21, 17.41, 18.94, 19.19, 23.59, 23.79, 24.39, and 28.15, wherein
the XRPD is measured using an incident beam of Cu radiation, e.g.,
Cu K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.102 Any of formulae
1.78-1.101 wherein the Crystalline Form B exhibits an XRPD pattern
comprising at least three, e.g., at least five, 2-theta (.degree.)
values selected from those set forth in Table E below:
TABLE-US-00005 TABLE E .degree.2.theta. d space (.ANG.) Intensity
(%) 6.04 .+-. 0.20 14.620 .+-. 0.484 13 13.21 .+-. 0.20 6.699 .+-.
0.101 21 17.41 .+-. 0.20 5.089 .+-. 0.058 14 18.94 .+-. 0.20 4.681
.+-. 0.049 79 19.19 .+-. 0.20 4.622 .+-. 0.048 100 23.59 .+-. 0.20
3.769 .+-. 0.032 16 23.79 .+-. 0.20 3.737 .+-. 0.031 43 24.39 .+-.
0.20 3.646 .+-. 0.029 23 28.15 .+-. 0.20 3.168 .+-. 0.022 24
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.103 Any of
formulae 1.78-1.102 wherein the Crystalline Form B exhibits an XRPD
pattern comprising the 2-theta (.degree.) values set forth in Table
E of formula 1.102, wherein the XRPD is measured using an incident
beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein
the XRPD is measured using radiation of wavelength 1.54059 .ANG..
1.104 Any of formulae 1.78-1.103 wherein the Crystalline Form B
exhibits an XRPD pattern having representative 2-theta (.degree.)
values as set forth in Table E of formula 1.102, wherein the XRPD
is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.105 Any of formulae
1.78-1.104 wherein the Crystalline Form B exhibits an XRPD pattern
comprising at least three, e.g., at least five, e.g., at least
nine, e.g., at least ten, e.g., at least fifteen, e.g., at least
twenty, e.g., at least twenty-five, 2-theta (.degree.) values
selected from the group consisting of 6.0, 12.1, 13.2, 14.9, 15.1,
16.0, 16.9, 17.4, 18.2, 18.9, 19.2, 19.9, 21.1, 21.3, 21.7, 22.6,
23.6, 23.8, 24.4, 25.3, 26.1, 26.6, 27.2, 28.2, 28.7, and 29.5,
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.106 Any of
formulae 1.78-1.105 wherein the Crystalline Form B exhibits an XRPD
pattern comprising the following 2-theta (.degree.) values: 6.0,
12.1, 13.2, 14.9, 15.1, 16.0, 16.9, 17.4, 18.2, 18.9, 19.2, 19.9,
21.1, 21.3, 21.7, 22.6, 23.6, 23.8, 24.4, 25.3, 26.1, 26.6, 27.2,
28.2, 28.7, and 29.5, wherein the XRPD is measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.54059
.ANG.. 1.107 Any of formulae 1.78-1.106 wherein the Crystalline
Form B exhibits an XRPD pattern comprising at least three, e.g., at
least five, e.g., at least nine, e.g., at least ten, e.g., at least
fifteen, e.g., at least twenty, e.g., at least twenty-five, 2-theta
(.degree.) values selected from the group consisting of 6.04,
12.12, 13.21, 14.86, 15.13, 16.02, 16.90, 17.41, 18.23, 18.94,
19.19, 19.91, 21.05, 21.27, 21.74, 22.55, 23.59, 23.79, 24.39,
25.34, 26.06, 26.61, 27.15, 28.15, 28.66, and 29.47, wherein the
XRPD is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.108 Any of formulae
1.78-1.107 wherein the Crystalline Form B exhibits an XRPD pattern
comprising the following 2-theta (.degree.) values: 6.04, 12.12,
13.21, 14.86, 15.13, 16.02, 16.90, 17.41, 18.23, 18.94, 19.19,
19.91, 21.05, 21.27, 21.74, 22.55, 23.59, 23.79, 24.39, 25.34,
26.06, 26.61, 27.15, 28.15, 28.66, and 29.47, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.109 Any of formulae 1.78-1.108 wherein
the Crystalline Form B exhibits an XRPD pattern comprising at least
three, e.g., at least five, e.g., at least nine, e.g., at least
ten, e.g., at least fifteen, e.g., at least twenty, e.g., at least
twenty-five, e.g., at least five, 2-theta (.degree.) values
selected from those set forth in Table F below:
TABLE-US-00006 TABLE F .degree.2.theta. d space (.ANG.) Intensity
(%) 6.04 .+-. 0.20 14.620 .+-. 0.484 13 12.12 .+-. 0.20 7.296 .+-.
0.120 6 13.21 .+-. 0.20 6.699 .+-. 0.101 21 14.86 .+-. 0.20 5.958
.+-. 0.080 8 15.13 .+-. 0.20 5.853 .+-. 0.077 5 16.02 .+-. 0.20
5.529 .+-. 0.069 1 16.90 .+-. 0.20 5.242 .+-. 0.062 4 17.41 .+-.
0.20 5.089 .+-. 0.058 14 18.23 .+-. 0.20 4.861 .+-. 0.053 10 18.94
.+-. 0.20 4.681 .+-. 0.049 79 19.19 .+-. 0.20 4.622 .+-. 0.048 100
19.91 .+-. 0.20 4.457 .+-. 0.044 4 21.05 .+-. 0.20 4.217 .+-. 0.040
11 21.27 .+-. 0.20 4.173 .+-. 0.039 2 21.74 .+-. 0.20 4.085 .+-.
0.037 4 22.55 .+-. 0.20 3.939 .+-. 0.034 6 23.59 .+-. 0.20 3.769
.+-. 0.032 16 23.79 .+-. 0.20 3.737 .+-. 0.031 43 24.39 .+-. 0.20
3.646 .+-. 0.029 23 25.34 .+-. 0.20 3.512 .+-. 0.027 1 26.06 .+-.
0.20 3.416 .+-. 0.026 2 26.61 .+-. 0.20 3.347 .+-. 0.025 1 27.15
.+-. 0.20 3.282 .+-. 0.024 2 28.15 .+-. 0.20 3.168 .+-. 0.022 24
28.66 .+-. 0.20 3.112 .+-. 0.021 13 29.47 .+-. 0.20 3.028 .+-.
0.020 13
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.110 Any of
formulae 1.78-1.109 wherein the Crystalline Form B exhibits an XRPD
pattern comprising the 2-theta (.degree.) values set forth in Table
F of formula 1.109, wherein the XRPD is measured using an incident
beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein
the XRPD is measured using radiation of wavelength 1.54059 .ANG..
1.111 Any of formulae 1.78-1.110 wherein the Crystalline Form B
exhibits an XRPD pattern comprising at least three d-spacing
(.ANG.) values selected from the group consisting of 14.6, 5.1,
4.7, 4.6, and 3.6. 1.112 Any of formulae 1.78-1.111 wherein the
Crystalline Form B exhibits an XRPD pattern comprising d-spacing
(.ANG.) values of 14.6, 5.1, 4.7, 4.6, and 3.6. 1.113 Any of
formulae 1.78-1.112 wherein the Crystalline Form B exhibits an XRPD
pattern comprising at least three d-spacing (.ANG.) values selected
from the group consisting of 14.62, 5.09, 4.68, 4.62, and 3.65.
1.114 Any of formulae 1.78-1.113 wherein the Crystalline Form B
exhibits an XRPD pattern comprising d-spacing (.ANG.) values of
14.62, 5.09, 4.68, 4.62, and 3.65. 1.115 Any of formulae 1.78-1.114
wherein the Crystalline Form B exhibits an XRPD pattern comprising
at least three d-spacing (.ANG.) values selected from the group
consisting of 14.620, 5.089, 4.681, 4.622, and 3.646. 1.116 Any of
formulae 1.78-1.115 wherein the Crystalline Form B exhibits an XRPD
pattern comprising d-spacing (.ANG.) values of 14.620, 5.089,
4.681, 4.622, and 3.646. 1.117 Any of formulae 1.78-1.116 wherein
the Crystalline Form B exhibits an XRPD pattern comprising at least
three d-spacing (.ANG.) values selected from those set forth in
Table D of formula 1.93. 1.118 Any of formulae 1.78-1.117 wherein
the Crystalline Form B exhibits an XRPD pattern comprising the
d-spacing (.ANG.) values set forth in Table D of formula 1.93.
1.119 Any of formulae 1.78-1.118 wherein the Crystalline Form B
exhibits an XRPD pattern comprising at least three, e.g., at least
five, d-spacing (.ANG.) values selected from the group consisting
of 14.6, 6.7, 5.1, 4.7, 4.6, 3.8, 3.7, 3.6, and 3.2. 1.120 Any of
formulae 1.78-1.119 wherein the Crystalline Form B exhibits an XRPD
pattern comprising d-spacing (.ANG.) values of 14.6, 6.7, 5.1, 4.7,
4.6, 3.8, 3.7, 3.6, and 3.2. 1.121 Any of formulae 1.78-1.120
wherein the Crystalline Form B exhibits an XRPD pattern comprising
at least three, e.g., at least five, d-spacing (.ANG.) values
selected from the group consisting of 14.62, 6.70, 5.09, 4.68,
4.62, 3.77, 3.74, 3.65, and 3.17. 1.122 Any of formulae 1.78-1.121
wherein the Crystalline Form B exhibits an XRPD pattern comprising
d-spacing (.ANG.) values of 14.62, 6.70, 5.09, 4.68, 4.62, 3.77,
3.74, 3.65, and 3.17. 1.123 Any of formulae 1.78-1.122 wherein the
Crystalline Form B exhibits an XRPD pattern comprising at least
three, e.g., at least five, d-spacing (.ANG.) values selected from
the group consisting of 14.620, 6.699, 5.089, 4.681, 4.622, 3.769,
3.737, 3.646, and 3.168. 1.124 Any of formulae 1.78-1.123 wherein
the Crystalline Form B exhibits an XRPD pattern comprising
d-spacing (.ANG.) values of 14.620, 6.699, 5.089, 4.681, 4.622,
3.769, 3.737, 3.646, and 3.168. 1.125 Any of formulae 1.78-1.124
wherein the Crystalline Form B exhibits an XRPD pattern comprising
at least three, e.g., at least five, d-spacing (.ANG.) values
selected from those set forth in Table E of formula 1.102. 1.126
Any of formulae 1.78-1.125 wherein the Crystalline Form B exhibits
an XRPD pattern comprising the d-spacing (.ANG.) values set forth
in Table E of formula 1.102. 1.127 Any of formulae 1.78-1.126
wherein the Crystalline Form B exhibits an XRPD pattern comprising
at least three, e.g., at least five, e.g., at least nine, e.g., at
least ten, e.g., at least fifteen, e.g., at least twenty, d-spacing
(.ANG.) values selected from the group consisting of 14.6, 7.3,
6.7, 6.0, 5.9, 5.5, 5.2, 5.1, 4.9, 4.7, 4.6, 4.5, 4.2, 4.1, 3.9,
3.8, 3.7, 3.6, 3.5, 3.4, 3.3, 3.2, 3.1, and 3.0. 1.128 Any of
formulae 1.78-1.127 wherein the Crystalline Form B exhibits an XRPD
pattern comprising d-spacing (.ANG.) values of 14.6, 7.3, 6.7, 6.0,
5.9, 5.5, 5.2, 5.1, 4.9, 4.7, 4.6, 4.5, 4.2, 4.1, 3.9, 3.8, 3.7,
3.6, 3.5, 3.4, 3.3, 3.2, 3.1, and 3.0. 1.129 Any of formulae
1.78-1.128 wherein the Crystalline Form B exhibits an XRPD pattern
comprising at least three, e.g., at least five, e.g., at least
nine, e.g., at least ten, e.g., at least fifteen, e.g., at least
twenty, e.g., at least twenty-five, d-spacing (.ANG.) values
selected from the group consisting of 14.62, 7.30, 6.70, 5.96,
5.85, 5.53, 5.24, 5.09, 4.86, 4.68, 4.62, 4.46, 4.22, 4.17, 4.09,
3.94, 3.77, 3.74, 3.65, 3.51, 3.42, 3.35, 3.28, 3.17, 3.11, and
3.03. 1.130 Any of formulae 1.78-1.129 wherein the Crystalline Form
B exhibits an XRPD pattern comprising d-spacing (.ANG.) values of
14.62, 7.30, 6.70, 5.96, 5.85, 5.53, 5.24, 5.09, 4.86, 4.68, 4.62,
4.46, 4.22, 4.17, 4.09, 3.94, 3.77, 3.74, 3.65, 3.51, 3.42, 3.35,
3.28, 3.17, 3.11, and 3.03. 1.131 Any of formulae 1.78-1.130
wherein the Crystalline Form B exhibits an XRPD pattern comprising
at least three, e.g., at least five, e.g., at least nine, e.g., at
least ten, e.g., at least fifteen, e.g., at least twenty, e.g., at
least twenty-five, d-spacing (.ANG.) values selected from the group
consisting of 14.620, 7.296, 6.699, 5.958, 5.853, 5.529, 5.242,
5.089, 4.861, 4.681, 4.622, 4.457, 4.217, 4.173, 4.085, 3.939,
3.769, 3.737, 3.646, 3.512, 3.416, 3.347, 3.282, 3.168, 3.112, and
3.028. 1.132 Any of formulae 1.78-1.131 wherein the Crystalline
Form B exhibits an XRPD pattern comprising d-spacing (.ANG.) values
of 14.620, 7.296, 6.699, 5.958, 5.853, 5.529, 5.242, 5.089, 4.861,
4.681, 4.622, 4.457, 4.217, 4.173, 4.085, 3.939, 3.769, 3.737,
3.646, 3.512, 3.416, 3.347, 3.282, 3.168, 3.112, and 3.028. 1.133
Any of formulae 1.78-1.132 wherein the Crystalline Form B exhibits
an XRPD pattern comprising at least three, e.g., at least five,
e.g., at least nine, e.g., at least ten, e.g., at least fifteen,
e.g., at least twenty, e.g., at least twenty-five, d-spacing
(.ANG.) values selected from those set forth in Table F of formula
1.109. 1.134 Any of formulae 1.78-1.133 wherein the Crystalline
Form B exhibits an XRPD pattern comprising the d-spacing (.ANG.)
values set forth in Table F of formula 1.109. 1.135 Any of formulae
1.78-1.134 wherein the Crystalline Form B exhibits an X-ray powder
diffraction pattern comprising characteristic peaks of the XRPD
pattern shown in FIG. 5, wherein the XRPD is measured using Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.541871 .ANG.. 1.136 Any of
formulae 1.78-1.135 wherein the Crystalline Form B exhibits an
X-ray powder diffraction pattern comprising representative peaks of
the XRPD pattern shown in FIG. 5, wherein the XRPD is measured
using Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.541871 .ANG..
1.137 Any of formulae 1.78-1.136 wherein the Crystalline Form B
exhibits an X-ray powder diffraction pattern, e.g., an X-ray powder
diffraction pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.541871 .ANG., comprising
three peaks, in some embodiments, five peaks, selected from those
shown in FIG. 5. 1.138 Any of formulae 1.78-1.137 wherein the
Crystalline Form B exhibits an X-ray powder diffraction pattern,
e.g., an X-ray powder diffraction pattern measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.541871
.ANG., comprising at least five peaks, e.g., at least nine peaks,
e.g., at least ten peaks, e.g., at least fifteen peaks, e.g., at
least twenty peaks, e.g., at least twenty-five peaks, selected from
those shown in FIG. 5. 1.139 Any of formulae 1.78-1.138 wherein the
Crystalline Form B exhibits an X-ray powder diffraction pattern,
e.g., an X-ray powder diffraction pattern measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.541871
.ANG., substantially as shown in FIG. 5. 1.140 Any of formulae
1.78-1.139 wherein the Crystalline Form B exhibits an X-ray powder
diffraction pattern, e.g., an X-ray powder diffraction pattern
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.541871 .ANG., as shown in FIG. 5. 1.141 Any of
formulae 1.78-1.140 wherein the Crystalline Form B exhibits an
X-ray powder diffraction pattern comprising characteristic peaks of
the XRPD pattern shown in FIG. 7, wherein the XRPD is measured
using Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG., e.g.,
wherein XRPD pattern also comprises peaks of Crystalline Form A
(e.g., a mixture of Crystalline Forms A and B). 1.142 Any of
formulae 1.78-1.141 wherein the Crystalline Form B exhibits an
X-ray powder diffraction pattern comprising representative peaks of
the XRPD pattern shown in FIG. 7, wherein the XRPD is measured
using Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG., e.g.,
wherein XRPD pattern also comprises peaks of Crystalline Form A
(e.g., a mixture of Crystalline Forms A and B). 1.143 Any of
formulae 1.78-1.142 wherein the Crystalline Form B exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., a high-resolution X-ray powder
diffraction pattern measured using an incident beam of Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG., comprising three peaks, in some
embodiments, five peaks, selected from those shown in FIG. 7, e.g.,
wherein XRPD pattern also comprises peaks of Crystalline Form A
(e.g., a mixture of Crystalline Forms A and B). 1.144 Any of
formulae 1.78-1.143 wherein the Crystalline Form B exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., a high-resolution X-ray powder
diffraction pattern measured using an incident beam of Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG., comprising at least five peaks, e.g., at
least nine peaks, e.g., at least ten peaks, e.g., at least fifteen
peaks, e.g., at least twenty peaks, e.g., at least twenty-five
peaks, selected from those shown in FIG. 7, e.g., wherein XRPD
pattern comprises peaks of Crystalline Form A (e.g., a mixture of
Crystalline Forms A and B). 1.145 Any of formulae 1.78-1.144
wherein the Crystalline Form B exhibits an X-ray powder diffraction
pattern, e.g., an X-ray powder diffraction pattern measured using
an incident beam of Cu radiation, e.g., Cu K.alpha. radiation,
e.g., a high-resolution X-ray powder diffraction pattern measured
using an incident beam of Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG.,
substantially as shown in FIG. 7, e.g., wherein XRPD pattern
comprises peaks of Crystalline Form A (e.g., a mixture of
Crystalline Forms A and B). 1.146 Any of formulae 1.78-1.145
wherein the Crystalline Form B exhibits an X-ray powder diffraction
pattern, e.g., an X-ray powder diffraction pattern measured using
an incident beam of Cu radiation, e.g., Cu K.alpha. radiation,
e.g., a high-resolution X-ray powder diffraction pattern measured
using an incident beam of Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG., as
shown in FIG. 7, e.g., wherein XRPD pattern comprises peaks of
Crystalline Form A (e.g., a mixture of Crystalline Forms A and B).
1.147 Any of formulae 1.78-1.146 wherein the Crystalline Form B
exhibits an XRPD pattern comprising characteristic peaks of the
XRPD pattern shown in any of FIGS. 7, 40, and 48, e.g., FIG. 7,
e.g., FIG. 40, e.g., FIG. 48, wherein the XRPD is measured using Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.148 Any of
formulae 1.78-1.147 wherein the Crystalline Form B exhibits an XRPD
pattern comprising representative peaks of the XRPD pattern shown
in any of FIGS. 7, 40, and 48, e.g., FIG. 7, e.g., FIG. 40, e.g.,
FIG. 48, wherein the XRPD is measured using Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.149 Any of formulae
1.78-1.148 wherein the Crystalline Form B exhibits an XRPD pattern,
e.g., an X-ray powder diffraction pattern measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g., a
high-resolution X-ray powder diffraction pattern measured using an
incident beam of Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG., comprising
three peaks, in some embodiments, five peaks, selected from those
shown in any of FIGS. 7, 40, and 48, e.g., FIG. 7, e.g., FIG. 40,
e.g., FIG. 48. 1.150 Any of formulae 1.78-1.149 wherein the
Crystalline Form B exhibits an XRPD pattern, e.g., an X-ray powder
diffraction pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., a high-resolution
X-ray powder diffraction pattern measured using an incident beam of
Cu K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG., comprising at least five,
e.g., at least nine, e.g., at least ten, e.g., at least fifteen,
e.g., at least twenty, e.g., at least twenty-five, selected from
those shown in any of FIGS. 7, 40, and 48, e.g., FIG. 7, e.g., FIG.
40, e.g., FIG. 48. 1.151 Any of formulae 1.78-1.150 wherein the
Crystalline Form B exhibits an XRPD pattern, e.g., an X-ray powder
diffraction pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG., substantially
as shown in any of FIGS. 7, 40, and 48, e.g., FIG. 7, e.g., FIG.
40, e.g., FIG. 48. 1.152 Any of formulae 1.1-1.151 wherein the
Crystalline Form B exhibits an X-ray powder diffraction (XRPD)
pattern, e.g., an X-ray powder diffraction pattern measured using
an incident beam of Cu radiation, e.g., Cu K.alpha. radiation,
e.g., wherein the XRPD is measured using radiation of wavelength
1.54059 .ANG., as shown in any of FIGS. 7, 40, and 48, e.g., FIG.
7, e.g., FIG. 40, e.g., FIG. 48. 1.153 Any of formulae 1.78-1.152
wherein the Crystalline Form B exhibits a differential scanning
calorimetry (DSC) thermogram comprising an endothermic peak between
247.degree. C. and 248.degree. C. 1.154 Any of formulae 1.78-1.153
wherein the Crystalline Form B exhibits a differential scanning
calorimetry (DSC) thermogram comprising an endothermic peak at
247.degree. C. 1.155 Any of formulae 1.78-1.154 wherein the
Crystalline Form B exhibits a differential scanning calorimetry
(DSC) thermogram comprising an endothermic peak at 248.degree. C.,
e.g., an endothermic peak at 248.degree. C. with an onset at
246.degree. C. 1.156 Any of formulae 1.78-1.155 wherein the
Crystalline Form B exhibits a differential scanning calorimetry
(DSC) thermogram comprising an endothermic peak at 251.degree. C.
1.157 Any of formulae 1.78-1.156 wherein the Crystalline Form B
exhibits a differential scanning calorimetry (DSC) thermogram
comprising an endothermic peak at 264.degree. C. 1.158 Any of
formulae 1.78-1.157 wherein the Crystalline Form B exhibits a
differential scanning calorimetry (DSC) thermogram comprising an
endothermic peak at 141.degree. C., e.g., an endothermic peak at
141.degree. C. with an onset between 137.degree. C. and 138.degree.
C., e.g., an endothermic peak at 141.degree. C. with an onset at
137.degree. C., e.g., an endothermic peak at 141.degree. C. with an
onset at 138.degree. C. 1.159 Any of formulae 1.78-1.158 wherein
the Crystalline Form B exhibits a differential scanning calorimetry
(DSC) thermogram as shown in FIG. 8. 1.160 Any of formulae
1.78-1.159 wherein the Crystalline Form B exhibits a
thermogravimetric analysis (TGA) thermogram comprising 0.2% weight
loss up to 200.degree. C. 1.161 Any of formulae 1.78-1.160 wherein
the Crystalline Form B exhibits a thermogravimetric analysis (TGA)
thermogram comprising an onset decomposition temperature at
281.degree. C. 1.162 Any of formulae 1.78-1.161 wherein the
Crystalline Form B exhibits a thermogravimetric analysis (TGA)
thermogram as shown in FIG. 8. 1.163 Crystalline Form C of the
Compound in hydrochloric acid addition salt form
((1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride) ("Crystalline Form C"). 1.164 Formula 1.163 wherein
the Crystalline Form C exhibits an XRPD pattern comprising a
2-theta (.degree.) value of 17.7, wherein the XRPD is measured
using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.165 Formula 1.163 or 1.164 wherein the
Crystalline Form C exhibits an XRPD pattern having a
characteristic 2-theta (.degree.) value of 17.7, wherein the XRPD
is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.166 Any of formulae
1.163-1.165 wherein the Crystalline Form C exhibits an XRPD pattern
comprising a 2-theta (.degree.) value of 17.74, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.167 Any of formulae 1.163-1.166 wherein
the Crystalline Form C exhibits an XRPD pattern having a
characteristic 2-theta (.degree.) value of 17.74, wherein the XRPD
is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.168 Any of formulae
1.163-1.167 wherein the Crystalline Form C exhibits an XRPD pattern
comprising a 2-theta (.degree.) value in Table G below:
TABLE-US-00007 TABLE G .degree.2.theta. d space (.ANG.) Intensity
(%) 17.74 .+-. 0.20 4.994 .+-. 0.056 100
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.169 Any of
formulae 1.163-1.168 wherein the Crystalline Form C exhibits an
XRPD pattern having characteristic 2-theta (.degree.) value as set
forth in Table G of formula 1.168, wherein the XRPD is measured
using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.170 Any of formulae 1.163-1.169 wherein
the Crystalline Form C exhibits an XRPD pattern comprising at least
one, e.g., at least three, e.g., at least five, 2-theta (.degree.)
values selected from the group consisting of 7.0, 13.2, 14.4, 17.7,
18.0, 19.9, 21.3, 22.6, 23.7, and 26.5, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.171 Any of formulae 1.163-1.170 wherein
the Crystalline Form C exhibits an XRPD pattern comprising 2-theta
(.degree.) values of 7.0, 13.2, 14.4, 17.7, 18.0, 19.9, 21.3, 22.6,
23.7, and 26.5, wherein the XRPD is measured using an incident beam
of Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG.. 1.172
Any of formulae 1.163-1.171 wherein the Crystalline Form C exhibits
an XRPD pattern having representative 2-theta (.degree.) values of
7.0, 13.2, 14.4, 17.7, 18.0, 19.9, 21.3, 22.6, 23.7, and 26.5,
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.173 Any of
formulae 1.163-1.172 wherein the Crystalline Form C exhibits an
XRPD pattern comprising at least one, e.g., at least three, e.g.,
at least five, e.g., at least ten, 2-theta (.degree.) values
selected from the group consisting of 6.97, 13.24, 14.39, 17.74,
17.98, 18.03, 19.85, 21.32, 22.60, 23.68, and 26.52, wherein the
XRPD is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.174 Any of formulae
1.163-1.173 wherein the Crystalline Form C exhibits an XRPD pattern
comprising 2-theta (.degree.) values of 6.97, 13.24, 14.39, 17.74,
17.98, 18.03, 19.85, 21.32, 22.60, 23.68, and 26.52, wherein the
XRPD is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.175 Any of formulae
1.163-1.174 wherein the Crystalline Form C exhibits an XRPD pattern
having representative 2-theta (.degree.) values of 6.97, 13.24,
14.39, 17.74, 17.98, 18.03, 19.85, 21.32, 22.60, 23.68, and 26.52,
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.176 Any of
formulae 1.163-1.175 wherein the Crystalline Form C exhibits an
XRPD pattern comprising at least one, e.g., at least three, e.g.,
at least five, e.g., at least ten, 2-theta (.degree.) values
selected from those set forth in Table H below:
TABLE-US-00008 TABLE H .degree.2.theta. d space (.ANG.) Intensity
(%) 6.97 .+-. 0.20 12.677 .+-. 0.363 15 13.24 .+-. 0.20 6.683 .+-.
0.101 13 14.39 .+-. 0.20 6.150 .+-. 0.085 21 17.74 .+-. 0.20 4.994
.+-. 0.056 100 17.98 .+-. 0.20 4.929 .+-. 0.054 27 18.03 .+-. 0.20
4.915 .+-. 0.054 24 19.85 .+-. 0.20 4.470 .+-. 0.045 47 21.32 .+-.
0.20 4.164 .+-. 0.039 23 22.60 .+-. 0.20 3.931 .+-. 0.034 95 23.68
.+-. 0.20 3.754 .+-. 0.031 25 26.52 .+-. 0.20 3.359 .+-. 0.025
34
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.177 Any of
formulae 1.163-1.176 wherein the Crystalline Form C exhibits an
XRPD pattern comprising the 2-theta (.degree.) values set forth in
Table H of formula 1.176, wherein the XRPD is measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.54059
.ANG.. 1.178 Any of formulae 1.163-1.177 wherein the Crystalline
Form C exhibits an XRPD pattern having representative 2-theta
(.degree.) values as set forth in Table H of formula 1.176, wherein
the XRPD is measured using an incident beam of Cu radiation, e.g.,
Cu K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.179 Any of formulae
1.163-1.178 wherein the Crystalline Form C exhibits an XRPD pattern
comprising at least one, e.g., at least three, e.g., at least five,
e.g., at least ten, e.g., at least eleven, e.g., at least fifteen,
e.g., at least twenty, 2-theta (.degree.) values selected from the
group consisting of 7.0, 13.2, 13.7, 14.0, 14.4, 16.3, 17.7, 18.0,
18.3, 19.9, 21.1, 21.3, 22.6, 23.4, 23.7, 23.9, 26.0, 26.5, 26.7,
26.9, 27.4, 28.0, 28.2, 29.1, and 29.5, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.180 Any of formulae 1.163-1.179 wherein
the Crystalline Form C exhibits an XRPD pattern comprising the
following 2-theta (.degree.) values: 7.0, 13.2, 13.7, 14.0, 14.4,
16.3, 17.7, 18.0, 18.3, 19.9, 21.1, 21.3, 22.6, 23.4, 23.7, 23.9,
26.0, 26.5, 26.7, 26.9, 27.4, 28.0, 28.2, 29.1, and 29.5, wherein
the XRPD is measured using an incident beam of Cu radiation, e.g.,
Cu K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.181 Any of formulae
1.163-1.180 wherein the Crystalline Form C exhibits an XRPD pattern
comprising at least one, e.g., at least three, e.g., at least five,
e.g., at least ten, e.g., at least eleven, e.g., at least fifteen,
e.g., at least twenty, e.g., at least twenty-five, 2-theta
(.degree.) values selected from the group consisting of 6.97,
13.24, 13.68, 13.97, 14.39, 16.29, 17.74, 17.98, 18.03, 18.30,
19.85, 21.06, 21.32, 22.60, 23.35, 23.68, 23.94, 25.99, 26.52,
26.66, 26.90, 27.40, 27.99, 28.19, 29.06, and 29.52, wherein the
XRPD is measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.54059 .ANG.. 1.182 Any of formulae
1.163-1.181 wherein the Crystalline Form C exhibits an XRPD pattern
comprising the following 2-theta (.degree.) values: 6.97, 13.24,
13.68, 13.97, 14.39, 16.29, 17.74, 17.98, 18.03, 18.30, 19.85,
21.06, 21.32, 22.60, 23.35, 23.68, 23.94, 25.99, 26.52, 26.66,
26.90, 27.40, 27.99, 28.19, 29.06, and 29.52, wherein the XRPD is
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG.. 1.183 Any of formulae 1.163-1.182 wherein
the Crystalline Form C exhibits an XRPD pattern comprising at least
one, e.g., at least three, e.g., at least five, e.g., at least ten,
e.g., at least eleven, e.g., at least fifteen, e.g., at least
twenty, e.g., at least twenty-five, 2-theta (.degree.) values
selected from those set forth in Table I below:
TABLE-US-00009 TABLE I .degree.2.theta. d space (.ANG.) Intensity
(%) 6.97 .+-. 0.20 12.677 .+-. 0.363 15 13.24 .+-. 0.20 6.683 .+-.
0.101 13 13.68 .+-. 0.20 6.469 .+-. 0.094 2 13.97 .+-. 0.20 6.333
.+-. 0.090 3 14.39 .+-. 0.20 6.150 .+-. 0.085 21 16.29 .+-. 0.20
5.435 .+-. 0.066 6 17.74 .+-. 0.20 4.994 .+-. 0.056 100 17.98 .+-.
0.20 4.929 .+-. 0.054 27 18.03 .+-. 0.20 4.915 .+-. 0.054 24 18.30
.+-. 0.20 4.843 .+-. 0.052 13 19.85 .+-. 0.20 4.470 .+-. 0.045 47
21.06 .+-. 0.20 4.214 .+-. 0.040 6 21.32 .+-. 0.20 4.164 .+-. 0.039
23 22.60 .+-. 0.20 3.931 .+-. 0.034 95 23.35 .+-. 0.20 3.806 .+-.
0.032 14 23.68 .+-. 0.20 3.754 .+-. 0.031 25 23.94 .+-. 0.20 3.714
.+-. 0.031 13 25.99 .+-. 0.20 3.426 .+-. 0.026 14 26.52 .+-. 0.20
3.359 .+-. 0.025 34 26.66 .+-. 0.20 3.340 .+-. 0.025 16 26.90 .+-.
0.20 3.311 .+-. 0.024 14 27.40 .+-. 0.20 3.252 .+-. 0.023 6 27.99
.+-. 0.20 3.185 .+-. 0.022 6 28.19 .+-. 0.20 3.163 .+-. 0.022 3
29.06 .+-. 0.20 3.070 .+-. 0.021 5 29.52 .+-. 0.20 3.024 .+-. 0.020
7
wherein the XRPD is measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.54059 .ANG.. 1.184 Any of
formulae 1.163-1.183 wherein the Crystalline Form C exhibits an
XRPD pattern comprising the 2-theta (.degree.) values set forth in
Table I of formula 1.183, wherein the XRPD is measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.54059
.ANG.. 1.185 Any of formulae 1.163-1.184 wherein the Crystalline
Form C exhibits an XRPD pattern comprising a d-spacing (.ANG.)
value of 5.0. 1.186 Any of formulae 1.163-1.185 wherein the
Crystalline Form C exhibits an XRPD pattern comprising a d-spacing
(.ANG.) value of 4.99. 1.187 Any of formulae 1.163-1.186 wherein
the Crystalline Form C exhibits an XRPD pattern comprising a
d-spacing (.ANG.) value of 4.994. 1.188 Any of formulae 1.163-1.187
wherein the Crystalline Form C exhibits an XRPD pattern comprising
a d-spacing (.ANG.) value in Table G of formula 1.168. 1.189 Any of
formulae 1.163-1.188 wherein the Crystalline Form C exhibits an
XRPD pattern comprising at least one, e.g., at least three, e.g.,
at least five, d-spacing (.ANG.) values selected from the group
consisting of 12.7, 6.7, 6.2, 5.0, 4.9, 4.5, 4.2, 3.9, 3.8, and
3.4. 1.190 Any of formulae 1.163-1.189 wherein the Crystalline Form
C exhibits an XRPD pattern comprising d-spacing (.ANG.) values of
12.7, 6.7, 6.2, 5.0, 4.9, 4.5, 4.2, 3.9, 3.8, and 3.4. 1.191 Any of
formulae 1.163-1.190 wherein the Crystalline Form C exhibits an
XRPD pattern comprising at least one, e.g., at least three, e.g.,
at least five, e.g., at least ten, d-spacing (.ANG.) values
selected from the group consisting of 12.68, 6.68, 6.15, 4.99,
4.93, 4.92, 4.47, 4.16, 3.93, 3.75, and 3.36. 1.192 Any of formulae
1.163-1.191 wherein the Crystalline Form C exhibits an XRPD pattern
comprising d-spacing (.ANG.) values of 12.68, 6.68, 6.15, 4.99,
4.93, 4.92, 4.47, 4.16, 3.93, 3.75, and 3.36. 1.193 Any of formulae
1.163-1.192 wherein the Crystalline Form C exhibits an XRPD pattern
comprising at least one, e.g., at least three, e.g., at least five,
e.g., at least ten, d-spacing (.ANG.) values selected from the
group consisting of 12.677, 6.683, 6.150, 4.994, 4.929, 4.915,
4.470, 4.164, 3.931, 3.754, and 3.359. 1.194 Any of formulae
1.163-1.193 wherein the Crystalline Form C exhibits an XRPD pattern
comprising d-spacing (.ANG.) values of 12.677, 6.683, 6.150, 4.994,
4.929, 4.915, 4.470, 4.164, 3.931, 3.754, and 3.359. 1.195 Any of
formulae 1.163-1.194 wherein the Crystalline Form C exhibits an
XRPD pattern comprising at least one, e.g., at least three, e.g.,
at least five, e.g., at least ten, d-spacing (.ANG.) values
selected from those set forth in Table H of formula 1.176. 1.196
Any of formulae 1.163-1.195 wherein the Crystalline Form C exhibits
an XRPD pattern comprising the d-spacing (.ANG.) values set forth
in Table H of formula 1.176. 1.197 Any of formulae 1.163-1.196
wherein the Crystalline Form C exhibits an XRPD pattern comprising
at least one, e.g., at least three, e.g., at least five, e.g., at
least ten, e.g., at least eleven, e.g., at least fifteen, d-spacing
(.ANG.) values selected from the group consisting of 12.7, 6.7,
6.5, 6.3, 6.2, 5.4, 5.0, 4.9, 4.8, 4.5, 4.2, 3.9, 3.8, 3.7, 3.4,
3.3, 3.2, 3.1, and 3.0. 1.198 Any of formulae 1.163-1.197 wherein
the Crystalline Form C exhibits an XRPD pattern comprising
d-spacing (.ANG.) values of 12.7, 6.7, 6.5, 6.3, 6.2, 5.4, 5.0,
4.9, 4.8, 4.5, 4.2, 3.9, 3.8, 3.7, 3.4, 3.3, 3.2, 3.1, and 3.0.
1.199 Any of formulae 1.163-1.198 wherein the Crystalline Form C
exhibits an XRPD pattern comprising at least one, e.g., at least
three, e.g., at least five, e.g., at least ten, e.g., at least
eleven, e.g., at least fifteen, e.g., at least twenty, e.g., at
least twenty-five, d-spacing (.ANG.) values selected from the group
consisting of 12.68, 6.68, 6.47, 6.33, 6.15, 5.44, 4.99, 4.93,
4.92, 4.84, 4.47, 4.21, 4.16, 3.93, 3.81, 3.75, 3.71, 3.43, 3.36,
3.34, 3.31, 3.25, 3.19, 3.16, 3.07, and 3.02. 1.200 Any of formulae
1.163-1.199 wherein the Crystalline Form C exhibits an XRPD pattern
comprising d-spacing (.ANG.) values of 12.68, 6.68, 6.47, 6.33,
6.15, 5.44, 4.99, 4.93, 4.92, 4.84, 4.47, 4.21, 4.16, 3.93, 3.81,
3.75, 3.71, 3.43, 3.36, 3.34, 3.31, 3.25, 3.19, 3.16, 3.07, and
3.02. 1.201 Any of formulae 1.163-1.200 wherein the Crystalline
Form C exhibits an XRPD pattern comprising at least one, e.g., at
least three, e.g., at least five, e.g., at least ten, e.g., at
least eleven, e.g., at least fifteen, e.g., at least twenty, e.g.,
at least twenty-five, d-spacing (.ANG.) values selected from the
group consisting of 12.677, 6.683, 6.469, 6.333, 6.150, 5.435,
4.994, 4.929, 4.915, 4.843, 4.470, 4.214, 4.164, 3.931, 3.806,
3.754, 3.714, 3.426, 3.359, 3.340, 3.311, 3.252, 3.185, 3.163,
3.070, and 3.024. 1.202 Any of formulae 1.163-1.201 wherein the
Crystalline Form C exhibits an XRPD pattern comprising d-spacing
(.ANG.) values of 12.677, 6.683, 6.469, 6.333, 6.150, 5.435, 4.994,
4.929, 4.915, 4.843, 4.470, 4.214, 4.164, 3.931, 3.806, 3.754,
3.714, 3.426, 3.359, 3.340, 3.311, 3.252, 3.185, 3.163, 3.070, and
3.024. 1.203 Any of formulae 1.163-1.202 wherein the Crystalline
Form C exhibits an XRPD pattern comprising at least one, e.g., at
least three, e.g., at least five, e.g., at least ten, e.g., at
least eleven, e.g., at least fifteen, e.g., at least twenty, e.g.,
at least twenty-five, d-spacing (.ANG.) values selected from those
set forth in Table I of formula 1.183. 1.204 Any of formulae
1.163-1.203 having an XRPD pattern comprising the d-spacing (.ANG.)
values set forth in Table I of formula 1.183. 1.205 Any of formulae
1.163-1.204 wherein the Crystalline Form C exhibits an X-ray powder
diffraction pattern comprising characteristic peaks of the XRPD
pattern shown in FIG. 9, wherein the XRPD is measured using Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.541871 .ANG.. 1.206 Any of
formulae 1.163-1.205 wherein the Crystalline Form C exhibits an
X-ray powder diffraction pattern comprising representative peaks of
the XRPD pattern shown in FIG. 9, wherein the XRPD is measured
using Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.541871 .ANG..
1.207 Any of formulae 1.163-1.206 wherein the Crystalline Form C
exhibits an X-ray powder diffraction pattern, e.g., an X-ray powder
diffraction pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.541871 .ANG., comprising
three peaks, in some embodiments, five peaks, selected from those
shown in FIG. 9. 1.208 Any of formulae 1.163-1.207 wherein the
Crystalline Form C exhibits an X-ray powder diffraction pattern,
e.g., an X-ray powder diffraction pattern measured using an
incident beam of Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.541871
.ANG., comprising at least one peak, e.g., at least five peaks,
e.g., at least eleven peaks, e.g., at least fifteen peaks, e.g., at
least twenty peaks, e.g., at least twenty-five peaks, selected from
those shown in FIG. 9. 1.209 Any of formulae 1.163-1.208 wherein
the Crystalline Form C exhibits an X-ray powder diffraction
pattern, e.g., an X-ray powder diffraction pattern measured using
an incident beam of Cu radiation, e.g., Cu K.alpha. radiation,
e.g., wherein the XRPD is measured using radiation of wavelength
1.541871 .ANG., substantially as shown in FIG. 9. 1.210 Any of
formulae 1.163-1.209 wherein the Crystalline Form C exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.541871 .ANG., as shown in FIG. 9. 1.211
Any of formulae 1.163-1.210 wherein the Crystalline Form C exhibits
an X-ray powder diffraction pattern comprising characteristic peaks
of the XRPD pattern shown in FIG. 11, wherein the XRPD is measured
using Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG., e.g.,
wherein XRPD pattern also comprises peaks of Crystalline Form A
(e.g., a mixture of Crystalline Forms A and C). 1.212 Any of
formulae 1.163-1.211 wherein the Crystalline Form C exhibits an
X-ray powder diffraction pattern comprising representative peaks of
the XRPD pattern shown in FIG. 11, wherein the XRPD is measured
using Cu radiation, e.g., Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG., e.g.,
wherein XRPD pattern also comprises peaks of Crystalline Form A
(e.g., a mixture of Crystalline Forms A and C). 1.213 Any of
formulae 1.163-1.212 wherein the Crystalline Form C exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., a high-resolution X-ray powder
diffraction pattern measured using an incident beam of Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG., comprising three peaks, in some
embodiments, five peaks, selected from those shown in FIG. 11,
e.g., wherein XRPD pattern also comprises peaks of Crystalline Form
A (e.g., a mixture of Crystalline Forms A and C). 1.214 Any of
formulae 1.163-1.213 wherein the Crystalline Form C exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., a high-resolution X-ray powder
diffraction pattern measured using an incident beam of Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG., comprising at least one peak, e.g., at
least five peaks, e.g., at least eleven peaks, e.g., at least
fifteen peaks, e.g., at least twenty peaks, e.g., at least
twenty-five peaks, selected from those shown in FIG. 11, e.g.,
wherein XRPD pattern also comprises peaks of Crystalline Form A
(e.g., a mixture of Crystalline Forms A and C). 1.215 Any of
formulae 1.163-1.214 wherein the Crystalline Form C exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., a high-resolution X-ray powder
diffraction pattern measured using an incident beam of Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG., substantially as shown in FIG. 11, e.g.,
wherein XRPD pattern also comprises peaks of Crystalline Form A
(e.g., a mixture of Crystalline Forms A and C). 1.216 Any of
formulae 1.163-1.215 wherein the Crystalline Form C exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., a high-resolution X-ray powder
diffraction pattern measured using an incident beam of Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG., as shown in FIG. 11, e.g., wherein XRPD
pattern also comprises peaks of Crystalline Form A (e.g., a mixture
of Crystalline Forms A and C). 1.217 Any of formulae 1.163-1.216
wherein the Crystalline Form C exhibits an XRPD pattern comprising
characteristic peaks of the XRPD pattern as shown in any of FIGS.
11 and 43, e.g., FIG. 11, e.g., FIG. 43, wherein the XRPD is
measured using Cu radiation, e.g., Cu K.alpha. radiation, e.g.,
wherein the XRPD is measured using radiation of wavelength 1.54059
.ANG.. 1.218 Any of formulae 1.163-1.217 wherein the Crystalline
Form C exhibits an XRPD pattern comprising representative peaks of
the XRPD pattern as shown in any of FIGS. 11 and 43, e.g., FIG. 11,
e.g., FIG. 43, wherein the XRPD is measured using Cu radiation,
e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is measured
using radiation of wavelength 1.54059 .ANG.. 1.219 Any of formulae
1.163-1.218 wherein the Crystalline Form C exhibits an XRPD
pattern, e.g., an X-ray powder diffraction pattern measured using
an incident beam of Cu radiation, e.g., Cu K.alpha. radiation,
e.g., a high-resolution X-ray powder diffraction pattern measured
using an incident beam of Cu K.alpha. radiation, e.g., wherein the
XRPD is measured using radiation of wavelength 1.54059 .ANG.,
comprising three peaks, in some embodiments, five peaks, selected
from those shown in any of FIGS. 11 and 43, e.g., FIG. 11, e.g.,
FIG. 43. 1.220 Any of formulae 1.163-1.219 wherein the Crystalline
Form C exhibits an XRPD pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., a high-resolution X-ray powder
diffraction pattern measured using an incident beam of Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG., comprising at least one peak, e.g., at
least five peaks, e.g., at least ten peaks, e.g., at least eleven
peaks, e.g., at least fifteen peaks, e.g., at least twenty peaks,
e.g., at least twenty-five peaks, selected from those shown in any
of FIGS. 11 and 43, e.g., FIG. 11, e.g., FIG. 43. 1.221 Any of
formulae 1.163-1.220 wherein the Crystalline Form C exhibits an
XRPD pattern, e.g., an X-ray powder diffraction pattern measured
using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.54059 .ANG., substantially as shown in any of FIGS. 11
and 43, e.g., FIG. 11, e.g., FIG. 43. 1.222 Any of formulae
1.163-1.221 wherein the Crystalline Form C exhibits an XRPD
pattern, e.g., an X-ray powder diffraction pattern measured using
an incident beam of Cu radiation, e.g., Cu K.alpha. radiation,
e.g., wherein the XRPD is measured using radiation of wavelength
1.54059 .ANG., as shown in any of FIGS. 11 and 43, e.g., FIG. 11,
e.g., FIG. 43. 1.223 Any of formulae 1.163-1.222 wherein the
Crystalline Form C exhibits a differential scanning calorimetry
(DSC) thermogram comprising an endothermic peak between 247.degree.
C. and 248.degree. C., e.g., between 247.degree. C. and 248.degree.
C. with an onset at 246.degree. C. 1.224 Any of formulae
1.163-1.223 wherein the Crystalline Form C exhibits a differential
scanning calorimetry (DSC) thermogram comprising an endothermic
peak at 247.degree. C., e.g., an endothermic peak at 247.degree. C.
with an onset at 246.degree. C. 1.225 Any of formulae 1.163-1.224
wherein the Crystalline Form C exhibits a differential scanning
calorimetry (DSC) thermogram comprising an endothermic peak at
248.degree. C., e.g., an endothermic peak at 248.degree. C. with an
onset at 246.degree. C. 1.226 Any of formulae 1.163-1.225 wherein
the Crystalline Form C exhibits a differential scanning calorimetry
(DSC) thermogram comprising an endothermic peak at 122.degree. C.,
e.g, an endothermic peak at 122.degree. C. with an onset at
112.degree. C. 1.227 Any of formulae 1.163-1.226 wherein the
Crystalline Form C exhibits a differential scanning calorimetry
(DSC) thermogram comprising an endothermic peak at 271.degree. C.
1.228 Any of formulae 1.163-1.227 wherein the Crystalline Form C
exhibits a differential scanning calorimetry (DSC) thermogram as
shown in FIG. 12. 1.229 Any of formulae 1.163-1.228 wherein the
Crystalline Form C exhibits a thermogravimetric analysis (TGA)
comprising 1.3% weight loss up to 200.degree. C. 1.230 Any of
formulae 1.163-1.229 wherein the Crystalline Form C exhibits a
thermogravimetric analysis (TGA) thermogram comprising an onset
decomposition temperature at 266.degree. C. 1.231 Any of formulae
1.163-1.230 wherein the Crystalline Form C exhibits a
thermogravimetric analysis (TGA) thermogram as shown in FIG. 12.
1.232 A Crystalline Form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
as described and/or made as in any of the examples. 1.233 A
Crystalline Form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
having an X-ray powder diffraction and/or X-ray crystal structure
as depicted in any of the Figures. 1.234 The Crystalline Form of
any of formulae 1.1-1.233 wherein the XRPD pattern is measured
using a copper source, e.g., a copper anode. 1.235 A combination of
any of the Crystalline Forms A through F, e.g., any of formulae
1.1-1.234 and any of formulae 2.1-2.25, e.g., a combination of
Crystalline Form A and Crystalline Form B; a combination of
Crystalline Form A and Crystalline Form C; a combination of
Crystalline Form A, Crystalline Form B, and Crystalline Form C; a
combination of Crystalline Form B and Crystalline Form C; a
combination of Crystalline Form B and Crystalline Form D; a
combination of Crystalline Form E and Crystalline Form F. 1.236 The
Crystalline Form according to any of formulae 1.1-1.234, e.g.,
Crystalline Form A, e.g., any of formulae 1.1-1.77, e.g.,
Crystalline Form B, e.g., any of formulae 1.78-1.162, wherein said
Crystalline Form is free or substantially free of any other form,
e.g., less than 20 wt. %, e.g., less than 15 wt. %, e.g., less than
10 wt. %, preferably less than 5 wt. %, preferably less than 3 wt.
%, more preferably less than 2 wt. %, still preferably less than 1
wt. %, still preferably less than 0.1 wt. %, most preferably less
than 0.01 wt. %, of the amorphous form. 1.237
The Crystalline Form according to any of formulae 1.1-1.234, e.g.,
Crystalline Form A, e.g., any of formulae 1.1-1.77, e.g.,
Crystalline Form B, e.g., any of formulae 1.78-1.162, wherein said
Crystalline Form is free or substantially free of any other form,
e.g., less than 20 wt. %, e.g., less than 10 wt. %, preferably less
than 5 wt. %, preferably less than 3 wt. %, more preferably less
than 2 wt. %, still preferably less than 1 wt. %, still preferably
less than 0.1 wt. %, most preferably less than 0.01 wt. %, of any
other crystalline form. 1.238 The Crystalline Form according to any
of formulae 1.1-1.234, e.g., Crystalline Form A, e.g., any of
formulae 1.1-1.77, e.g., Crystalline Form B, e.g., any of formulae
1.78-1.162, wherein said Crystalline Form is free or substantially
free of any other form, e.g., less than 20 wt. %, e.g., less than
10 wt. %, preferably less than 5 wt. %, preferably less than 3 wt.
%, more preferably less than 2 wt. %, still preferably less than 1
wt. %, still preferably less than 0.1 wt. %, most preferably less
than 0.01 wt. %, of the amorphous form and any other crystalline
form. 1.239 The Crystalline Form according to any of formulae
1.1-1.238 when made by any of processes described in formula
4.1-4.20 or similarly described in any of the examples or having an
X-ray powder diffraction or X-ray crystal structure as depicted in
any of the Figures.
In the second aspect, the invention provides a citrate salt of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane.
In the third aspect, the invention provides a phosphate salt of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane.
In the fourth aspect, the invention provides a crystalline form as
made or described in any of the examples or having an X-ray powder
diffraction as depicted in any of the Figures, e.g.: 2.1
Crystalline Form D. 2.2 Formula 2.1 wherein the Crystalline Form D
exhibits an X-ray powder diffraction pattern, e.g., an X-ray powder
diffraction pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.541871 .ANG., comprising
characteristic peaks of the XRPD pattern shown in FIG. 15. 2.3
Formula 2.1 or 2.2 wherein the Crystalline Form D exhibits an X-ray
powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.541871 .ANG., comprising representative
peaks of the XRPD pattern shown in FIG. 15. 2.4 Any of formula
2.1-2.3 wherein the Crystalline Form D exhibits an X-ray powder
diffraction pattern, e.g., an X-ray powder diffraction pattern
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.541871 .ANG., comprising three peaks, in some
embodiments, five peaks, selected from those shown in FIG. 15. 2.5
Any of formula 2.1-2.4 wherein the Crystalline Form D exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.541871 .ANG., comprising ten peaks, in
some embodiments twenty peaks, in some embodiments twenty-five
peaks, selected from those shown in FIG. 15. 2.6 Any of formula
2.1-2.5 wherein the Crystalline Form D exhibits an X-ray powder
diffraction pattern, e.g., an X-ray powder diffraction pattern
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.541871 .ANG., substantially as shown in FIG. 15. 2.7
Any of formulae 2.1-2.6 wherein the Crystalline Form D exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.541871 .ANG., as shown in FIG. 15. 2.8
Any of formulae 2.1-2.7 wherein the Crystalline Form D is a citrate
salt of (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane. 2.9
Crystalline Form E. 2.10 Formula 2.9 wherein the Crystalline Form E
exhibits an X-ray powder diffraction pattern, e.g., an X-ray powder
diffraction pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.541871 .ANG., comprising
characteristic peaks of the XRPD pattern shown in FIG. 16. 2.11
Formula 2.9 or 2.10 wherein the Crystalline Form E exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.541871 .ANG., comprising representative
peaks of the XRPD pattern shown in FIG. 16. 2.12 Any of formula
2.9-2.11 wherein the Crystalline Form E exhibits an X-ray powder
diffraction pattern, e.g., an X-ray powder diffraction pattern
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.541871 .ANG., comprising three peaks, in some
embodiments, five peaks, selected from those shown in FIG. 16. 2.13
Any of formula 2.9-2.12 wherein the Crystalline Form E exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.541871 .ANG., comprising ten peaks, in
some embodiments twenty peaks, in some embodiments twenty-five
peaks, selected from those shown in FIG. 16. 2.14 Any of formula
2.9-2.13 wherein the Crystalline Form E exhibits an X-ray powder
diffraction pattern, e.g., an X-ray powder diffraction pattern
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.541871 .ANG., substantially as shown in FIG. 16. 2.15
Any of formulae 2.9-2.14 wherein the Crystalline Form E exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.541871 .ANG., as shown in FIG. 16. 2.16
Any of formulae 2.9-2.15 wherein the Crystalline Form E is a
phosphate salt of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane. 2.17
Crystalline Form F. 2.18 Formula 2.17 wherein the Crystalline Form
F exhibits an X-ray powder diffraction pattern, e.g., an X-ray
powder diffraction pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.541871 .ANG., comprising
characteristic peaks of the XRPD pattern shown in FIG. 17. 2.19
Formula 2.17 or 2.18 wherein the Crystalline Form F exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.541871 .ANG., comprising representative
peaks of the XRPD pattern shown in FIG. 17. 2.20 Any of formula
2.17-2.19 wherein the Crystalline Form F exhibits an X-ray powder
diffraction pattern, e.g., an X-ray powder diffraction pattern
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.541871 .ANG., comprising three peaks, in some
embodiments, five peaks, selected from those shown in FIG. 17. 2.21
Any of formula 2.17-2.20 wherein the Crystalline Form F exhibits an
X-ray powder diffraction pattern, e.g., an X-ray powder diffraction
pattern measured using an incident beam of Cu radiation, e.g., Cu
K.alpha. radiation, e.g., wherein the XRPD is measured using
radiation of wavelength 1.541871 .ANG., comprising ten peaks, in
some embodiments twenty peaks, in some embodiments twenty-five
peaks, selected from those shown in FIG. 17. 2.22 Any of formula
2.17-2.21 wherein the Crystalline Form F exhibits an X-ray powder
diffraction pattern, e.g., an X-ray powder diffraction pattern
measured using an incident beam of Cu radiation, e.g., Cu K.alpha.
radiation, e.g., wherein the XRPD is measured using radiation of
wavelength 1.541871 .ANG., substantially as shown in FIG. 17. 2.23
Any of formulae 2.17-2.22 wherein the Crystalline Form F exhibits
an X-ray powder diffraction pattern, e.g., an X-ray powder
diffraction pattern measured using an incident beam of Cu
radiation, e.g., Cu K.alpha. radiation, e.g., wherein the XRPD is
measured using radiation of wavelength 1.541871 .ANG., as shown in
FIG. 17. 2.24 Any of formulae 2.17-2.23 wherein the Crystalline
Form F is a phosphate salt of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane. 2.25 The
Crystalline Form of any of formulae 2.1-2.24 wherein the XRPD
pattern is measured using a copper source, e.g., a copper anode.
2.26 A combination of any of the Crystalline Forms A through F,
e.g., any of formulae 1.1-1.234 and any of formulae 2.1-2.25, e.g.,
a combination of Crystalline Form A and Crystalline Form B; a
combination of Crystalline Form A and Crystalline Form C; a
combination of Crystalline Form A, Crystalline Form B, and
Crystalline Form C; a combination of Crystalline Form B and
Crystalline Form C; a combination of Crystalline Form B and
Crystalline Form D; a combination of Crystalline Form E and
Crystalline Form F. 2.27 The Crystalline Form according to any of
formulae 2.1-2.25, wherein said Crystalline Form is free or
substantially free of any other form, e.g., less than 20 wt. %,
e.g., less than 15 wt. %, e.g., less than 10 wt. %, preferably less
than 5 wt. %, preferably less than 3 wt. %, more preferably less
than 2 wt. %, still preferably less than 1 wt. %, still preferably
less than 0.1 wt. %, most preferably less than 0.01 wt. %, of the
amorphous form. 2.28 The Crystalline Form according to any of
formulae 2.1-2.25, wherein said Crystalline Form is free or
substantially free of any other form, e.g., less than 20 wt. %,
e.g., less than 10 wt. %, preferably less than 5 wt. %, preferably
less than 3 wt. %, more preferably less than 2 wt. %, still
preferably less than 1 wt. %, still preferably less than 0.1 wt. %,
most preferably less than 0.01 wt. %, of any other crystalline
form. 2.29 The Crystalline Form according to any of formulae
2.1-2.25, wherein said Crystalline Form is free or substantially
free of any other form, e.g., less than 20 wt. %, e.g., less than
10 wt. %, preferably less than 5 wt. %, preferably less than 3 wt.
%, more preferably less than 2 wt. %, still preferably less than 1
wt. %, still preferably less than 0.1 wt. %, most preferably less
than 0.01 wt. %, of the amorphous form and any other crystalline
form. 2.30 The Crystalline Form according to any of formulae
2.1-2.29 when made by any of processes described in formula
4.1-4.20 or similarly described in any of the examples or having an
X-ray powder diffraction or X-ray crystal structure as depicted in
any of the Figures.
Phase transitions of solids can be thermodynamically reversible or
irreversible. Crystalline forms that transform reversibly at a
specific transition temperature (T.sub.t) are enantiotropic
polymorphs. If the crystalline forms are not interconvertible under
these conditions, the system is monotropic (one thermodynamically
stable form).
Crystalline Forms A, B, and C are anhydrous enantiotropes of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride. Crystalline Form C is the stable solid phase below
the transition temperature T.sub.t,C.fwdarw.B, Crystalline Form B
is the stable solid phase between T.sub.t,C.fwdarw.B and
T.sub.t,B.fwdarw.A, and Crystalline Form A is the stable solid
phase above T.sub.t,B.fwdarw.A. T.sub.t,C.fwdarw.B is expected
below 2.degree. C. T.sub.t,C.fwdarw.A will be between 2.degree. C.
and ambient temperature, and T.sub.t,B.fwdarw.A is between 37 and
54.degree. C.
Owing to kinetic constraints, the thermodynamic transformation of
Crystalline Form A to Crystalline Form B is hindered. Therefore,
surprisingly, Crystalline Form A appears to be sufficiently
kinetically stable so as to persist in the solid state under
temperature conditions where it is thermodynamically
metastable.
Agitating Crystalline Form A as a slurry for 16 days in
dichloromethane at ambient temperature (see Example 6a) does not
cause a solvent mediated form conversion to Crystalline Form B, the
more stable form at that temperature. This indicates that the
critical free energy barrier for nucleation is not overcome in the
absence of seeds of the more stable polymorph within the time frame
evaluated.
Under exposure to accelerated stress conditions for two weeks,
Crystalline Forms A and B remain unchanged at 30.degree. C./56% RH
or 40.degree. C./75% RH (Example 11). In contrast, Crystalline Form
C converts to a mixture of Crystalline Forms A and B within two
weeks at 40.degree. C./75% RH (Example 11). Thus, unlike
Crystalline Form A, Crystalline Form C converts under conditions in
which it is metastable.
For Crystalline Form A, in the absence of seeds of the more stable
polymorph, the critical free energy barrier for the nucleation of
Crystalline Form B is not overcome in the solid state or in solvent
mediated conversion experiments within the time evaluated.
Thus, Crystalline Form A may be synthesized on large scale easily,
yet, also, surprisingly, persists in the solid state even under
conditions in which it is thermodynamically metastable.
In the fifth aspect, the invention provides the following: 3.1. A
pharmaceutical composition comprising any of the Crystalline Form A
through F according to any of formulae 1.1-1.239 or 2.1-2.30, e.g.,
Crystalline Form A, e.g., any of formulae 1.1-1.77, e.g.,
Crystalline Form B, e.g., any of formulae 1.78-1.162, and a
pharmaceutically acceptable diluent or carrier. 3.2. The
pharmaceutical composition according to formula 3.1, wherein the
composition is sustained release. 3.3. The pharmaceutical
composition according to formula 3.1 or 3.2, comprising 1 mg to
1800 mg, e.g., 10 mg to 1800 mg, e.g., 25 mg to 1800 mg, e.g., 10
mg to 1600 mg, e.g., 10 mg to 1200 mg, e.g., 50 mg to 1200 mg,
e.g., 50 mg to 1000 mg, e.g., 75 mg to 1000 mg, e.g., 75 mg to 800
mg, e.g., 75 mg to 500 mg, e.g., 100 mg to 750 mg, e.g., 100 mg to
500 mg, e.g., 100 mg to 400 mg, e.g., 100 mg to 300 mg, e.g., 100
mg to 200 mg, of any of the Crystalline Form A through F of the
invention, e.g., any of formulae 1.1-1.239, e.g., Crystalline Form
A, e.g., any of formulae 1.1-1.77, e.g., Crystalline Form B, e.g.,
any of formulae 1.78-1.162, e.g., any of formulae 2.1-2.30. 3.4.
The composition of any one of formulae 3.1-3.3 comprising 75 mg to
1000 mg, e.g., 100 mg to 600 mg, e.g., 100 mg to 400 mg, e.g., 100
mg to 200 mg, of any of the Crystalline Form A through F of the
invention, e.g., any of formulae 1.1-1.239, e.g., Crystalline Form
A, e.g., any of formulae 1.1-1.77, e.g., Crystalline Form B, e.g.,
any of formulae 1.78-1.162, e.g., any of formulae 2.1-2.30. 3.5.
The composition of any one of formulae 3.1-3.3 comprising 50 mg to
600 mg, e.g., 100 mg to 600 mg, e.g., 100 mg to 400 mg, e.g., 100
mg to 200 mg, of any of the Crystalline Form A through F of the
invention, e.g., any of formulae 1.1-1.239, e.g., Crystalline Form
A, e.g., any of formulae 1.1-1.77, e.g., Crystalline Form B, e.g.,
any of formulae 1.78-1.162, e.g., any of formulae 2.1-2.30. 3.6.
The composition of any one of formulae 3.1-3.3 comprising 5 mg to
500 mg, e.g., 5 mg to 10 mg, e.g., 10 mg to 25 mg, e.g., 30 mg to
50 mg, e.g., 10 mg to 300 mg, e.g., 25 mg to 300 mg, e.g., 50 mg to
100 mg, e.g., 100 mg to 250 mg, e.g., 250 mg to 500 mg, of any one
of Crystalline Forms A through F of the invention, e.g., e.g., any
of formulae 1.1-1.239, e.g., Crystalline Form A, e.g., any of
formulae 1.1-1.77, e.g., Crystalline Form B, e.g., any of formulae
1.78-1.162, e.g., any of formulae 2.1-2.30. 3.7. The composition of
any one of formulae 3.1-3.3 for administration of 0.5 mg/kg to 20
mg/kg per day, e.g., 1 mg/kg to 15 mg/kg per day, e.g., 1 mg/kg to
10 mg/kg per day, e.g., 2 mg/kg to 20 mg/kg per day, e.g., 2 mg/kg
to 10 mg/kg per day, e.g., 3 mg/kg to 15 mg/kg per day, of any of
the Crystalline Form A through F of the invention, e.g., any of
formulae 1.1-1.239, e.g., Crystalline Form A, e.g., any of formulae
1.1-1.77, e.g., Crystalline Form B, e.g., any of formulae
1.78-1.162, e.g., any of formulae 2.1-2.30. 3.8. The composition of
any one of formulae 3.1-3.7 comprising less than 50% w/w of any one
of Crystalline Forms A through F of the invention, e.g., less than
40% w/w, e.g., less than 30% w/w, less than 20% w/w, e.g., 1-40%
w/w, e.g., 5-40% w/w, e.g., 10-30% w/w, e.g., 15-25% w/w, e.g.,
15-20% w/w, e.g., 17% w/w, e.g., 25% w/w, e.g., any of formulae
1.1-1.239, e.g., Crystalline Form A, e.g., any of formulae
1.1-1.77, e.g., Crystalline Form B, e.g., any of formulae
1.78-1.162, e.g., any of formulae 2.1-2.30. 3.9. The composition of
any one of formulae 3.1-3.8 wherein the pharmaceutically acceptable
diluent or carrier comprises hydroxypropyl methylcellulose. 3.10.
The composition of formula 3.9, wherein the composition comprises
at least 10% w/w of the hydroxypropyl methylcellulose, e.g., 10-50%
w/w, e.g., 10-40% w/w, e.g., 20-50% w/w, e.g., 20-40% w/w, e.g.,
30-40% w/w, e.g., 37% w/w. 3.11. The composition of formula 3.9 or
3.10, wherein the degree of methoxy substitution of the
hydroxypropyl methylcellulose is 19-24%. 3.12. The composition of
any one of formulae 3.9-3.11, wherein the degree of hydroxypropoxy
substitution of the hydroxypropyl methylcellulose is 4-12%. 3.13.
The composition of any one of formulae 3.9-3.12, wherein the
hydroxypropyl methylcellulose is hypromellose 2208. 3.14. The
composition of any one of formulae 3.9-3.13, wherein the
hydroxypropyl methylcellulose has a nominal viscosity of 4,000
mPA.sigma.. 3.15. The composition of any one of formulae 3.9-3.13,
wherein the hydroxypropyl methylcellulose has a viscosity of
2,000-6,000 mPA.sigma., e.g., 2,600 to 5,000 mPA.sigma., e.g.,
2,663 to 4,970 mPA.sigma.. 3.16. The composition of any one of
formulae 3.9-3.15, wherein the pharmaceutically acceptable diluent
or carrier comprises alpha-lactose monohydrate. 3.17. The
composition of formula 3.16, wherein the composition comprises at
least 10% w/w of the alpha-lactose monohydrate, e.g., 10-80% w/w,
e.g., 20-70% w/w, e.g., 20-60% w/w, e.g., 20-50% w/w, e.g., 20-40%
w/w, e.g., 20-30% w/w, e.g., 30-70% w/w, e.g., 30-60% w/w, e.g.,
30-50% w/w, e.g., 30%-40% w/w, e.g., 37% w/w. 3.18. The composition
of formula 3.16 or 3.17, wherein the composition comprises milled
alpha-lactose monohydrate. 3.19. The composition of any one of
formulae 3.1-3.18, wherein the composition comprises a co-processed
mixture of hydroxypropyl methylcellulose and alpha-lactose
monohydrate (e.g., Retalac.RTM.). 3.20. The composition of formula
3.19, wherein the mixture comprises equal parts of the
hydroxypropyl methylcellulose and alpha-lactose monohydrate. 3.21.
The composition of formula 3.19 or 3.20, wherein the mixture
comprises particles of hydroxypropyl methylcellulose and
alpha-lactose monohydrate with d.sub.50 (median diameter) in the
range of 100 .mu.m to 200 .mu.m, e.g., 125 .mu.m. 3.22. The
composition of any one of formulae 3.19-3.21, wherein the mixture
comprises particles of hydroxypropyl methylcellulose and
alpha-lactose monohydrate wherein the particle size distribution is
as follows: <63 .mu.m.ltoreq.25% <100 .mu.m: 35% <250
.mu.m.gtoreq.80%. 3.23. The composition of any one of formulae
3.19-3.22, wherein the composition comprises at least 20% w/w of
the mixture, e.g., at least 30% w/w, e.g., at least 40% w/w, e.g.,
at least 50% w/w, e.g., at least 60% w/w, e.g., at least 70% w/w,
e.g, at least 80% w/w, e.g., 20-90% w/w, e.g., 30-80% w/w, e.g.,
40-80% w/w, e.g., 50-80% w/w, e.g., 60-80% w/w, e.g., 70-80% w/w,
e.g., 75% w/w. 3.24. The composition of any one of formulae
3.1-3.23, wherein the pharmaceutically acceptable diluent or
carrier comprises a lubricant, e.g., magnesium stearate. 3.25. The
composition of formula 3.24, wherein the lubricant is one or more
of glyceryl behenate, magnesium stearate, talc, and sodium stearyl
fumarate, e.g, magnesium stearate. 3.26. The composition of formula
3.24 or 3.25, wherein the composition comprises less than 10% w/w
of the lubricant, e.g., less than 5% w/w, less than 3% w/w, less
than 1% w/w, e.g., 0.1 to 1% w/w, e.g., 0.1 to 0.8% w/w, e.g., 0.5%
w/w. 3.27. The composition of any one of formulae 3.24-3.26,
wherein the composition comprises less than 10% w/w of magnesium
stearate, e.g., less than 5% w/w, less than 3% w/w, less than 1%
w/w, e.g., 0.1 to 1% w/w, e.g., 0.1 to 0.8% w/w, e.g., 0.5% w/w.
3.28. The composition of any one of formulae 3.1-3.27, wherein the
pharmaceutically acceptable diluent or carrier comprises one or
more of a diluent, disintegrant, binder, and modified release
agent. 3.29. The composition of formula 3.28, wherein the diluent
is one or more of mannitol (e.g., Pearlitol 300 DC),
micro-crystalline cellulose (e.g., Avicel pH 102), and
pre-gelatinized starch (e.g., Starch 1500). 3.30. The composition
of formula 3.29, wherein the disintegrant is one or both of
crospovidone (e.g., Polyplasdone XL-10) and sodium starch glycolate
(e.g., Explotab). 3.31. The composition of formula 3.28, wherein
the binder is polyvinylpyrrolidone (e.g., Povidone K29/32). 3.32.
The composition of formula 3.28, wherein the modified release agent
is one or more of hydroxypropyl cellulose (e.g., Klucel EXF, Klucel
MXF, and/or Klucel HXF) and hydroxypropyl methylcellulose (e.g.,
Methocel K100M, Methocel K4M PREM, Methocel K15M PREM CR). 3.33.
The composition of formula 3.28 or 3.32, wherein the composition
comprises at least 5% w/w of the modified release agent, e.g.,
5-60% w/w, e.g., 10-50% w/w, e.g., 10-40% w/w. 3.34. The
composition of formula 3.32 or 3.33, wherein the modified release
agent is hydroxypropyl methylcellulose. 3.35. A method for the
prophylaxis or treatment of a disorder and/or alleviation of
associated symptoms of any disorder treatable by inhibiting
reuptake of multiple biogenic amines causally linked to the
targeted CNS disorder, wherein the biogenic amines targeted for
reuptake inhibition are selected from norepinephrine, and/or
serotonin, and/or dopamine, in a particular embodiment, a method
for the prophylaxis or treatment of any of the following disorders:
(i) attention deficit hyperactivity disorder (ADHD, both pediatric
and adult) and related behavioral disorders, as well as forms and
symptoms of alcohol abuse, drug abuse, obsessive compulsive
disorder, learning disorders, reading problems, gambling addiction,
manic symptoms, phobias, panic attacks, oppositional defiant
disorder, conduct disorder, disruptive behavior disorder, academic
problems in school, smoking, abnormal sexual behaviors, schizoid
behaviors, somatization, depression (including but not limited to
major depressive disorder, recurrent; dysthymic disorder;
depressive disorder not otherwise specified (NOS); major depressive
disorder, single episode; depression associated with bipolar
disorder, Alzheimers, psychosis or Parkinson's disease; postnatal
depression; and seasonal affected disorder), sleep disorders,
generalized anxiety, stuttering, and tic disorders (such as
Tourette's syndrome); (ii) ADHD, substance abuse, depression,
anxiety disorders (including but not limited to panic disorder,
generalized anxiety, obsessive compulsive disorder, post-traumatic
stress disorder, and social anxiety disorder), autism, traumatic
brain injury, cognitive impairment, schizophrenia (particularly for
cognition), obesity, chronic pain disorders, personality disorder,
and mild cognitive impairment; (iii) anxiety, panic disorder,
posttraumatic stress disorder, obsessive compulsive disorder,
schizophrenia and allied disorders, obesity, tic disorders,
addiction, Parkinson's disease, and chronic pain; (iv) substance
abuse disorders (including but not limited to alcohol-related
disorders, nicotine-related disorders, amphetamine-related
disorders, cannabis-related disorders, cocaine-related disorders,
hallucinogen-use disorders, inhalant-related disorders, and
opioid-related disorders); (v) cognitive disorders, bipolar
disorder, anorexia nervosa, bulimia nervosa, cyclothymic disorder,
chronic fatigue syndrome, chronic or acute stress, fibromyalgia and
other somatoform disorders (including somatization disorder,
conversion disorder, pain disorder, hypochondriasis, body
dysmorphic disorder, undifferentiated somatoform disorder,
somatoform NOS), incontinence (i.e., stress incontinence, genuine
stress incontinence, and mixed incontinence), inhalation disorders,
mania, migraine headaches, peripheral neuropathy; (vi) addictive
disorders (including but not limited to eating disorders, impulse
control disorders, alcohol-related disorders, nicotine-related
disorders, amphetamine-related disorders, cannabis-related
disorders, cocaine-related disorders, hallucinogen use disorders,
inhalant-related disorders, opioid-related disorders); (vii)
fragile X-associated disorder; (viii) autism spectrum disorder
(ASD), e.g., in a patient with a fragile X-associated disorder;
(ix) ADHD in a patient with a fragile X-associated disorder; (x)
co-morbid ADHD and depression; (xi) co-morbid ADHD and substance
abuse; (xii) co-morbid ADHD and anxiety; comprising administering
to a patient in need thereof a therapeutically effective amount of
any of Crystalline Form A through F according to any of formulae
1.1-1.239, e.g., Crystalline Form A, e.g., any of formulae
1.1-1.77, e.g., Crystalline Form B, e.g., any of formulae
1.78-1.162, e.g., any of formulae 2.1-2.30, or a pharmaceutical
composition according to any of formulae 3.1-3.34. 3.36. A
pharmaceutical composition according to any of formulae 3.1-3.34
for use as a medicament, e.g., for use in the manufacture of a
medicament for the treatment or prophylaxis of any of the disorders
described in formula 3.35. 3.37. Crystalline Form A through F
according to any of formulae 1.1-1.239, e.g., Crystalline Form A,
e.g., any of formulae 1.1-1.77, e.g., Crystalline Form B, e.g., any
of formulae 1.78-1.162, e.g., any of formulae 2.1-2.30, for use in
the prophylaxis or treatment of any of the disorders described in
formula 3.35, or for use in the manufacture of a medicament for the
treatment or prophylaxis of any of the disorders described in
formula 3.35.
In the sixth aspect, the invention provides the Crystalline Form
according to any of formulae 1.1-1.239 or any of formulae 2.1-2.30
when made by any of the processes described or similarly described
as follows: 4.1 Adding water to the Compound in hydrochloric acid
addition salt form
((1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride); heating to dissolve all solids, e.g., heating to an
internal temperature between 30-40.degree. C., e.g., 34.degree. C.;
adding an organic solvent, e.g., tetrahydrofuran and/or
isopropylacetate; separating aqueous layer; adding base, e.g.,
aqueous ammonia, to the aqueous layer; adding an organic solvent,
e.g., isopropylacetate; agitating, e.g., for a minimum of 15
minutes; allowing layers to settle, e.g., for a minimum of 30
minutes; separating organic layer; drying organic layer, e.g., with
magnesium sulphate; filtering; washing filtercake with an organic
solvent, e.g., isopropylacetate; concentrating filtrate and washes;
adding isopropyl alcohol; stirring at room temperature to dissolve
all solids; adding hydrochloric acid, e.g., HCl in isopropanol, to
form solids, e.g., adding HCl over 10 minutes, e.g., adding HCl in
isopropanol over 10 minutes; adding additional hydrochloric acid,
e.g., HCl in isopropanol, e.g., adding additional HCl over 55
minutes, e.g., adding HCl in isopropanol over 55 minutes; stirring
slurry, e.g., stirring slurry for 35 minutes; adding additional
hydrochloric acid, e.g., HCl in isopropanol, e.g., adding
additional HCl over 10 minutes, e.g., adding HCl in isopropanol
over 10 minutes; stirring slurry, e.g., stirring slurry for 30
minutes; filtering; washing filtercake with an organic solvent,
e.g., isopropyl alcohol; and drying filtercake. 4.2 Storing
Crystalline Form A at 40.degree. C./75% RH, e.g., storing
Crystalline Form A at 40.degree. C./75% RH for 7 days; and
isolating crystals. 4.3 Preparing a solution of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g., Crystalline Form A, e.g., in chloroform,
dichloromethane, hexafluoroisopropylalcohol, methanol, and/or
2,2,2,-trifluoroethanol (TFE); sonicating; achieving complete
dissolution as judged by visual observation; filtering; evaporating
at ambient conditions, e.g., in a vial covered with aluminium foil
perforated with pinholes; and isolating crystals. 4.4 Preparing a
solution of (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g., Crystalline Form A, e.g., in chloroform,
dichloromethane, ethanol, and/or methanol; filtering; admixing with
antisolvent, e.g., toluene, heptane, acetonitrile, methyl ethyl
ketone, acetone, hexanes, tetrahydrofuran, dioxane, ethyl acetate,
and/or isopropyl ether; and isolating crystals. 4.5 Exposing
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g., Crystalline Form A, to vapor, e.g., organic
solvent vapor, e.g., dichloromethane and/or ethanol vapor; and
isolating crystals. 4.6 Preparing a suspension of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g., Crystalline Form A, e.g., in dichloromethane,
ethanol, isopropyl alcohol, 1-propanol, and/or water; agitating at
ambient temperature or elevated temperature; and isolating
crystals, e.g., by vacuum filtration. 4.7 Preparing a solution of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g., Crystalline Form A, at elevated temperature in
an organic solvent, e.g., dichloromethane, ethanol, isopropyl
alcohol, and/or 1-propanol; filtering, e.g., through 0.2 .mu.m
nylon filter, into a warm vial; cooling; optionally further cooling
by placing in a refrigerator and/or freezer; and isolating
crystals. 4.8 Preparing a solution of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g., Crystalline Form A, at elevated temperature in
an organic solvent, e.g., dichloromethane, ethanol, isopropyl
alcohol, and/or 1-propanol; filtering, e.g., through 0.2 .mu.m
nylon filter, into a cooled vial; cooling below 0.degree. C., e.g.,
placing in -78.degree. C. bath, e.g., an isopropyl alcohol/dry ice
bath; optionally further cooling by placing in a freezer; and
isolating crystals. 4.9 Preparing a solution of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g., Crystalline Form A in an organic solvent,
e.g., ethanol, isopropyl alcohol, methanol, acetone, toluene,
1-propanol, water, and/or dioxane; sonicating; achieving complete
dissolution as judged by visual observation; filtering, e.g.,
through 0.2 .mu.m nylon filter; evaporating at ambient temperature;
and isolating crystals. 4.10 Preparing a solution or suspension of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g., Crystalline Form A in an organic solvent,
e.g., dichloromethane, ethanol, isopropyl alcohol, and/or
1-propanol; cooling, e.g, in a freezer; and isolating crystals.
4.11 Preparing a solution or suspension of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, e.g., Crystalline Form A in an organic solvent,
e.g., hexafluoroisopropyl alcohol and/or 2,2,2-trifluoroethanol;
filtering, e.g., through 0.2 .mu.m nylon filter; adding
anti-solvent, e.g., an organic anti-solvent, e.g., isopropyl ether,
tetrahydrofuran, acetonitrile, ethyl acetate, and/or methyl ethyl
ketone, until precipitation; and isolating crystals, e.g., by
vacuum filtration. 4.12 Dissolving
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane in an organic
solvent, e.g., isopropanol; adding HCl, eg., HCl in isopropanol;
and optionally filtering. 4.13 Seeding a solution or slurry with
crystals of the desired form, e.g., seeding a solution or slurry
with Crystalline Form A, e.g., seeding while the temperature of the
solution or slurry is above room temperature, e.g., 65.degree. C.
4.14 Dissolving a solution of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
in an organic solvent, e.g., ethanol, while heating, e.g., to
70.degree. C.; optionally filtering, e.g., via an encapsulated
carbon filter; optionally concentrating, e.g., to 5 total volumes
(relative to (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride input); optionally reheating to redissolve any
solids; optionally cooling, e.g., cooling to 65.degree. C.; seeding
the solution; optionally stirring to develop the seed bed;
optionally cooling; and optionally filtering. 4.15 Dissolving
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
in water, e.g., with heat, e.g., heating to an internal temperature
between 30-40.degree. C., e.g., 34.degree. C.; washing the aqueous
solution; adding a base, e.g., ammonia; extracting
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane with an
organic solvent, e.g., isopropyl acetate; optionally drying, e.g.,
over magnesium sulphate; optionally concentrating to yield a solid;
optionally adding an organic solvent to dissolve the solid, e.g.,
isopropanol; and adding HCl, e.g., HCl in isopropanol; optionally
filtering; and optionally washing with an organic solvent, e.g.,
isopropanol. 4.16 Dissolving a solution of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
in an organic solvent, e.g., ethanol, while heating, e.g., to
70.degree. C.; optionally filtering, e.g., via an encapsulated
carbon filter; concentrating, e.g., to 5 total volumes (relative to
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
input); optionally seeding before or after concentrating; and
optionally filtering. 4.17 Dissolving
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane in an organic
solvent; adding HCl, e.g., HCl in isopropanol; and optionally
filtering. 4.18 Any of processes 4.1-4.17 further comprising
isolating the Crystalline Form, e.g., any of formulae 1.1-1.239 or
2.1-2.30, e.g., Crystalline Form A, e.g., any of formulae 1.1-1.77,
e.g. Crystalline Form B, e.g., any of formulae 1.78-1.162. 4.19 A
Crystalline Form according to any of formulae 1.1-1.239 or 2.1-2.30
when made by any of Examples 1-3, e.g., Example 1. 4.20 A
Crystalline Form according to any of formulae 1.1-1.239 or 2.1-2.30
when made by any of the syntheses described in the Examples, e.g.,
Example 1, e.g., e.g., Example 3, e.g., any of Examples 6-13, e.g.,
Example 17, e.g., Example 18.
In the seventh aspect, the invention provides a process for making
Crystalline Form A through F according to any of formulae 1.1-1.239
or 2.1-2.30, e.g., Crystalline Form A, e.g., any of formulae
1.1-1.77, e.g., Crystalline Form B, e.g., any of formulae
1.78-1.162, by any process described in any of formula 4.1-4.20 or
described in any of the Examples.
In the eight aspect, the invention provides a process for making a
pharmaceutical composition comprising any of the Crystalline Form A
through F according to any of formulae 1.1-1.239 or 2.1-2.30, e.g.,
Crystalline Form A, e.g., any of formulae 1.1-1.77, e.g.,
Crystalline Form B, e.g., any of formulae 1.78-1.162, e.g., a
pharmaceutical composition according to any of formula 3.1-3.34,
wherein the process comprises:
isolating any of the Crystalline Form A through F according to any
of formulae 1.1-1.239 or 2.1-2.30, e.g., Crystalline Form A, e.g.,
any of formulae 1.1-1.77, e.g., Crystalline Form B, e.g., any of
formulae 1.78-1.162, and
admixing the isolated Crystalline Form with a pharmaceutically
acceptable diluent or carrier.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 depicts a high-resolution X-ray powder diffraction (XRPD)
pattern of Crystalline Form A.
FIG. 2 depicts DSC and TGA thermograms of Crystalline Form A.
FIG. 3 depicts dynamic vapor sorption/desorption isotherm of
Crystalline Form A.
FIG. 4 depicts an overlay of X-ray powder diffraction (XRPD)
patterns of Crystalline Form A, Form B, and Form C (from top to
bottom):
FIG. 4A depicts a high resolution X-ray powder diffraction pattern
of Crystalline Form A;
FIG. 4B depicts an X-ray powder diffraction pattern of Crystalline
Form B; and
FIG. 4C depicts an X-ray powder diffraction pattern of Crystalline
Form C.
FIG. 5 depicts an X-ray powder diffraction (XRPD) pattern of
Crystalline Form B.
FIG. 6 depicts an indexing solution for Crystalline Form B.
FIG. 7 depicts a high-resolution X-ray powder diffraction (XRPD)
pattern of Crystalline Form B.
FIG. 8 depicts DSC and TGA thermograms of Crystalline Form B.
FIG. 9 depicts an X-ray powder diffraction (XRPD) pattern of
Crystalline Form C.
FIG. 10 depicts an indexing solution for Crystalline Form C.
FIG. 11 depicts a high-resolution X-ray powder diffraction (XRPD)
pattern of Crystalline Form C.
FIG. 12 depicts DSC and TGA thermograms of Crystalline Form C.
FIG. 13 depicts an overlay of X-ray powder diffraction (XRPD)
patterns of Crystalline Form A, Form B, and Form C (from top to
bottom):
FIG. 13A depicts an X-ray powder diffraction pattern of Crystalline
Form B (slow cooling in IPA, solids precipitate in
refrigerator);
FIG. 13B depicts an X-ray powder diffraction pattern of Crystalline
Form C+Crystalline Form B (slow crystalline cooling in IPA, with
seeds, solids precipitate in freezer);
FIG. 13C depicts an X-ray powder diffraction pattern of Crystalline
Form C+Crystalline Form A (slow cooling in IPA, solids precipitate
in freezer);
FIG. 13D depicts an X-ray powder diffraction pattern of Crystalline
Form B (slow cooling in IPA, solids precipitate in freezer);
FIG. 13E depicts an X-ray powder diffraction pattern of Crystalline
Form B+Crystalline Form A (crash cooling in IPA, solids precipitate
in dry ice/IPA);
FIG. 13F depicts an X-ray powder diffraction pattern of Crystalline
Form A+Crystalline Form C (slow cooling in IPA, solids precipitate
in freezer); and
FIG. 13G depicts an X-ray powder diffraction pattern of Crystalline
Form C, slow cooling in IPA.
FIG. 14 depicts an overlay of X-ray powder diffraction (XRPD)
patterns of Crystalline Form D, Form E, and Form F (from top to
bottom):
FIG. 14D depicts an X-ray powder diffraction pattern of Crystalline
Form D (30-min stir at 70.degree. C. in pH 4.4 buffer);
FIG. 14E depicts an X-ray powder diffraction pattern of Crystalline
Form E (contains peaks of Crystalline Form F, slurry at 50.degree.
C. in pH 6.0 buffer); and
FIG. 14F depicts an X-ray powder diffraction pattern of Crystalline
Form F (30-min stir at 70.degree. C. in pH 8.1 buffer).
FIG. 15 depicts an X-ray powder diffraction (XRPD) pattern of
Crystalline Form D.
FIG. 16 depicts an X-ray powder diffraction (XRPD) pattern of
Crystalline Form E (contains peaks of Crystalline Form F).
FIG. 17 depicts an X-ray powder diffraction (XRPD) pattern of
Crystalline Form F.
FIG. 18 depicts an ORTEP drawing of Crystalline Form A. Atoms are
represented by 50% probability anisotropic thermal ellipsoids.
FIG. 19 depicts a packing diagram of Crystalline Form A viewed down
the crystallographic a axis.
FIG. 20 depicts a packing diagram of Crystalline Form A viewed down
the crystallographic b axis.
FIG. 21 depicts a packing diagram of Crystalline Form A viewed down
the crystallographic c axis.
FIG. 22 depicts hydrogen bonding in Crystalline Form A.
FIG. 23 depicts a calculated X-ray powder diffraction (XRPD)
pattern of Crystalline Form A.
FIG. 24 depicts an atomic displacement ellipsoid drawing for
Crystalline Form B (atoms are represented by 50% probability
anisotropic thermal ellipsoids).
FIG. 25 depicts a packing diagram of Crystalline Form B viewed
along the crystallographic a axis.
FIG. 26 depicts a packing diagram of Crystalline Form B viewed
along the crystallographic b axis.
FIG. 27 depicts a packing diagram of Crystalline Form B viewed
along the crystallographic c axis.
FIG. 28 depicts hydrogen bonding in the structure of Crystalline
Form B.
FIG. 29 depicts the molecular conformations of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane in the
structures of Crystalline Forms A and B (left:
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane in the
structure of Crystalline Form A; right:
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane in the
structure of Crystalline Form B).
FIG. 30 depicts a packing diagram of Crystalline Forms A and B
viewed along the crystallographic a axis (left: packing of
Crystalline Form A; right: packing of Crystalline Form B).
FIG. 31 depicts hydrogen bonding in the structures of Crystalline
Forms A and B (left: hydrogen bonding in the structure of
Crystalline Form A; right: hydrogen bonding in the structure of
Form B).
FIG. 32 depicts a calculated X-ray powder pattern of Crystalline
Form B.
FIG. 33 depicts experimental and calculated XRPD patterns of
Crystalline Form B (top: experimental XRPD pattern at room
temperature; middle: calculated XRPD pattern adjusted to room
temperature; bottom: calculated XRPD pattern at 100 K).
FIG. 34 depicts experimental and calculated XRPD patterns of
Crystalline Form A (top: calculated XRPD pattern; bottom:
experimental XRPD pattern at room temperature).
FIG. 35 depicts an XRPD pattern of Crystalline Form A.
FIG. 36 depicts an XRPD pattern comparison of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
from Examples 1 and 5 (top: Example 5; bottom: Example 1) (patterns
are offset along the y-axis for comparison).
FIG. 37 depicts an XRPD pattern of Crystalline Form A collected
with Cu K.alpha. radiation.
FIG. 38 depicts an indexing result for the XRPD pattern depicted in
FIG. 37 collected with Cu K.alpha. radiation.
FIG. 39 depicts observed peaks for the XRPD pattern depicted in
FIG. 37 collected with Cu K.alpha. radiation.
FIG. 40 depicts an XRPD pattern of Crystalline Form B.
FIG. 41 depicts an indexing result for the XRPD pattern depicted in
FIG. 40 collected with Cu K.alpha. radiation.
FIG. 42 depicts observed peaks for the XRPD pattern depicted in
FIG. 40 collected with Cu K.alpha. radiation.
FIG. 43 depicts an XRPD pattern of Crystalline Form C.
FIG. 44 depicts an indexing result for the XRPD pattern depicted in
FIG. 43 collected with Cu K.alpha. radiation.
FIG. 45 depicts observed peaks for the XRPD pattern depicted in
FIG. 43 collected with Cu K.alpha. radiation.
FIG. 46 depicts proposed energy-temperature plots for Crystalline
Forms A, B, and C.
FIG. 47 depicts an XRPD pattern of Crystalline Form A.
FIG. 48 depicts an XRPD pattern of Crystalline Form B.
FIG. 49 depicts an XRPD pattern of a mixture of Crystalline Form A
and a minor quantity of Crystalline Form B.
FIG. 50 depicts XRPD patterns of Crystalline Form A before and
after DVS analysis (top: before, bottom: after).
FIGS. 51-54 depict XRPD patterns of disordered Crystalline Form
A.
FIG. 55 depicts a DSC Thermogram of Crystalline Form B.
FIG. 56 depicts an XRPD pattern of a mixture of Crystalline Forms A
and B.
DETAILED DESCRIPTION OF THE INVENTION
As used herein, the term "the Compound" refers to
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane, also known
as (+)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane. The term "the
Compound in hydrochloric acid addition salt form" refers to
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
or (+)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
having the following structure:
##STR00002## This compound is free or substantially free of the
corresponding (-)-enantiomer, e.g., containing no more than 20% w/w
(weight/weight) of the corresponding (-) enantiomer, in free or
pharmaceutically acceptable salt form, e.g., no more than 10% w/w
of the corresponding (-) enantiomer, in free or pharmaceutically
acceptable salt form, e.g., no more than 5% w/w of the
corresponding (-) enantiomer, in free or pharmaceutically
acceptable salt form, e.g., no more than 2% w/w of the
corresponding (-) enantiomer, in free or pharmaceutically
acceptable salt form, e.g., no more than 1% w/w of the
corresponding (-) enantiomer, in free or pharmaceutically
acceptable salt form.
"Crystalline Form A" refers to a crystalline form of the Compound
in hydrochloric acid addition salt form as described in any of
formulae 1.1-1.77 or as characterized in relevant sections of the
Examples below.
"Crystalline Form B" refers to a crystalline form of the Compound
in hydrochloric acid addition salt form as described in any of
formulae 1.78-1.162 or as characterized in relevant sections of the
Examples below.
"Crystalline Form C" refers to a crystalline form of the Compound
in hydrochloric acid addition salt form as described in any of
formulae 1.163-1.231 or as characterized in relevant sections of
the Examples below.
"Crystalline Form D" refers to a crystalline form as described in
any of formulae 2.1-2.8 or as characterized in relevant sections of
the Examples below.
"Crystalline Form E" refers to a crystalline form as described in
any of formulae 2.9-2.16 or as characterized in relevant sections
of the Examples below.
"Crystalline Form F" refers to a crystalline form as described in
any of formulae 2.17-2.24 or as characterized in relevant sections
of the Examples below.
The invention claims Crystalline Form A through F and combinations
thereof as described herein, for example in any of formulae
1.1-1.239 or in any of formulae 2.1-2.30. These Crystalline Forms
can be made and characterized as set forth in the Example section
below. Therefore, the invention provides any of Crystalline Form A
through F as set forth in any of formulae 1.1-1.239 or in any of
formulae 2.1-2.30 or as characterized in the Example section
below.
The term "substantially free" of other crystalline forms refer to
less than 10 wt. %, in some embodiments less than 5 wt. %, in some
embodiments less than 2 wt. %, still in some embodiments less than
1 wt. %, still in some embodiments less than 0.1 wt. %, yet in some
embodiments less than 0.01 wt. % of other forms or other crystal
forms, e.g., amorphous or other crystal forms.
The term "solvate" refers to crystalline solid adducts containing
either stoichiometric or nonstoichiometric amounts of a solvent
incorporated within the crystal structure. Therefore, the term
"non-solvate" form herein refers to crystalline forms that are free
or substantially free of solvent molecules within the crystal
structures of the invention. Similarly, the term "non-hydrate" form
herein refers to salt crystals that are free or substantially free
of water molecules within the crystal structures of the
invention.
The term "amorphous" form refers to solids of disordered
arrangements of molecules and do not possess a distinguishable
crystal lattice.
The term "patient" includes human and non-human. In one embodiment,
the patient is a human. In another embodiment, the patient is a
non-human.
The term "anti-solvent" means a solvent in which the Compound
and/or the Compound in hydrochloric acid addition salt form
((1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride) has low solubility or is insoluble. For instance, an
anti-solvent includes a solvent in which the Compound and/or the
Compound in hydrochloric acid addition salt form has a solubility
of less than 35 mg/ml, e.g., a solubility of 10-30 mg/ml, e.g., a
solubility of 1-10 mg/ml, e.g., a solubility of less than 1
mg/ml.
The term "XRPD" means X-ray powder diffraction.
It is to be understood that an X-ray powder diffraction pattern of
a given sample may vary (standard deviation) depending on the
instrument used, the time and temperature of the sample when
measured, and standard experimental errors. Therefore, the 2-theta
values, d-spacing values, heights and relative intensity of the
peaks will have an acceptable level of deviation. For example, the
values may have an acceptable deviation of e.g., about 20%, 15%,
10%, 5%, 3%, 2% or 1%. In a particular embodiment, the 2-theta
values (.degree.) or the d-spacing values (.ANG.) of the XRPD
pattern of the crystalline forms of the current invention may have
an acceptable deviation of .+-.0.2 degrees and/or .+-.0.2 .ANG..
Further, the XRPD pattern of the Crystalline Forms of the invention
may be identified by the characteristic peaks as recognized by one
skilled in the art. For example, the Crystalline Forms of the
invention may be identified by, e.g., two characteristic peaks, in
some instances, three characteristic peaks, in another instance,
five characteristic peaks. Therefore, the term "substantially as"
set forth in a particular table or depicted or shown in a
particular figure refers to any crystal which has an XRPD having
the major or characteristic peaks as set forth in the
tables/figures as recognized by one skilled in the art.
It is also to be understood that the differential scanning
calorimetry or thermogravimetric analysis thermograms of a given
sample may vary (standard deviation) depending on the instrument
used, the time and temperature of the sample when measured, and
standard experimental errors. The temperature value itself may
deviate by .+-.10.degree. C., preferably .+-.5.degree. C.,
preferably .+-.3.degree. C. of the reference temperature.
Under most circumstances for XRPDs, peaks within the range of up to
about 30.degree. 2.theta. are selected. Rounding algorithms are
used to round each peak to the nearest 0.1.degree. or 0.01.degree.
2.theta., depending upon the instrument used to collect the data
and/or the inherent peak resolution. Peak position variabilities
are given to within .+-.0.2.degree. 2.theta..
The wavelength used to calculate d-spacings (.ANG.) values herein
is 1.5405929 .ANG., the Cu-K.sub..alpha.1 wavelength (Phys. Rev.,
A56 (6), 4554-4568 (1997)).
Per USP guidelines, variable hydrates and solvates may display peak
variances greater than .+-.0.2.degree. 2.theta..
"Prominent peaks" are a subset of the entire observed peak list and
are selected from observed peaks by identifying preferably
non-overlapping, low-angle peaks, with strong intensity.
If multiple diffraction patterns are available, then assessments of
particle statistics (PS) and/or preferred orientation (PO) are
possible. Reproducibility among XRPD patterns from multiple samples
analyzed on a single diffractometer indicates that the particle
statistics are adequate. Consistency of relative intensity among
XRPD patterns from multiple diffractometers indicates good
orientation statistics. Alternatively, the observed XRPD pattern
may be compared with a calculated XRPD pattern based upon a single
crystal structure, if available. Two-dimensional scattering
patterns using area detectors can also be used to evaluate PS/PO.
If the effects of both PS and PO are determined to be negligible,
then the XRPD pattern is representative of the powder average
intensity for the sample and prominent peaks may be identified as
"representative peaks." In general, the more data collected to
determine representative peaks, the more confident one can be of
the classification of those peaks.
"Characteristic peaks," to the extent they exist, are a subset of
representative peaks and are used to differentiate one crystalline
polymorph from another crystalline polymorph (polymorphs being
crystalline forms having the same chemical composition).
Characteristic peaks are determined by evaluating which
representative peaks, if any, are present in one crystalline
polymorph of a compound against all other known crystalline
polymorphs of that compound to within .+-.0.2.degree. 2.theta.. Not
all crystalline polymorphs of a compound necessarily have at least
one characteristic peak.
It has been observed that in reactions to make Crystalline Form A,
Crystalline Form B may also form. However, synthesis of products
may be controlled by, for example, seeding with Crystalline Form
A.
The Crystalline Form A through F, e.g., formulae 1.1-1.239, e.g.,
formulae 2.1-2.30, and combinations thereof as described herein are
useful as an unbalanced triple reuptake inhibitor (TRI), most
potent towards norepinephrine reuptake (NE), one-sixth as potent
towards dopamine reuptake (DA) and one-fourteenth as much towards
serotonin reuptake (5-HT). Therefore, the Crystalline Form A
through F, e.g., formulae 1.1-1.239, e.g., formulae 2.1-2.30, and
combinations thereof as described herein are useful for the
prophylaxis or treatment of a disorder and/or alleviation of
associated symptoms of any disorder treatable by inhibiting
reuptake of multiple biogenic amines causally linked to the
targeted CNS disorder, wherein the biogenic amines targeted for
reuptake inhibition are selected from norepinephrine, and/or
serotonin, and/or dopamine. Therefore, the invention provides a
method for the prophylaxis or treatment of any of the following
disorders: attention deficit hyperactivity disorder (ADHD) and
related behavioral disorders, as well as forms and symptoms of
substance abuse (alcohol abuse, drug abuse), obsessive compulsive
behaviors, learning disorders, reading problems, gambling
addiction, manic symptoms, phobias, panic attacks, oppositional
defiant behavior, conduct disorder, academic problems in school,
smoking, abnormal sexual behaviors, schizoid behaviors,
somatization, depression, sleep disorders, generalized anxiety,
stuttering, and tic disorders. Further disorders are disclosed in
U.S. Publication No. 2007/0082940, the contents of which are hereby
incorporated by reference in their entirety; depression, anxiety
disorders, autism, traumatic brain injury, cognitive impairment,
and schizophrenia (particularly for cognition), obesity, chronic
pain disorders, personality disorder, and mild cognitive
impairment; panic disorder, posttraumatic stress disorder,
obsessive compulsive disorder, schizophrenia and allied disorders,
obesity, tic disorders, Parkinson's disease; disorders disclosed in
WO 2013/019271, the contents of which are hereby incorporated by
reference in their entirety; fragile X-associated disorder; fragile
X-associated disorder wherein the patient was refractory to a prior
course of treatment for the fragile X-associated disorder;
attention-deficit/hyperactivity disorder (ADHD) wherein the ADHD is
co-morbid with one or both of anxiety and depression (e.g.,
depression), e.g., in a patient with a fragile X-associated
disorder; autism spectrum disorder (ASD); disorders disclosed in
International Application No. PCT/US2014/069401, the contents of
which are hereby incorporated by reference in their entirety,
comprising administering to a patient in need thereof a
therapeutically effective amount of any of Crystalline Form A
through F according to any of formulae 1.1-1.239, e.g., Crystalline
Form A, e.g., any of formulae 1.1-1.77, e.g., Crystalline Form B,
e.g., any of formulae 1.78-1.162, e.g., any of formulae
2.1-2.30.
Disorders contemplated for treatment employing the Crystalline
Forms of the invention as described herein include disorders in the
Quick Reference to the Diagnostic Criteria From DSM-IV (Diagnostic
and Statistical Manual of Mental Disorders, Fourth Edition), The
American Psychiatric Association, Washington, D.C., 1994. These
target disorders, include, but are not limited to,
Attention-Deficit/Hyperactivity Disorder, Predominately Inattentive
Type; Attention-Deficit/Hyperactivity Disorder, Predominately
Hyperactivity-Impulsive Type; Attention-Deficit/Hyperactivity
Disorder, Combined Type; Attention-Deficit/Hyperactivity Disorder
not otherwise specified (NOS); Conduct Disorder; Oppositional
Defiant Disorder; and Disruptive Behavior Disorder not otherwise
specified (NOS).
Depressive disorders amenable for treatment and/or prevention
according to the invention include, but are not limited to, Major
Depressive Disorder, Recurrent; Dysthymic Disorder; Depressive
Disorder not otherwise specified (NOS); and Major Depressive
Disorder, Single Episode.
Addictive disorders amenable for treatment and/or prevention
employing the methods and compositions of the invention include,
but are not limited to, eating disorders, impulse control
disorders, alcohol-related disorders, nicotine-related disorders,
amphetamine-related disorders, cannabis-related disorders,
cocaine-related disorders, hallucinogen use disorders,
inhalant-related disorders, and opioid-related disorders.
Preferably, the Crystalline Form of the invention is Crystalline
Form A.
As used herein, "therapeutically effective amount" refers to an
amount effective, when administered to a human or non-human
patient, to provide a therapeutic benefit such as amelioration of
symptoms. The specific dose of substance administered to obtain a
therapeutic benefit will, of course, be determined by the
particular circumstances surrounding the case, including, for
example, the specific substance administered, the route of
administration, the condition being treated, and the individual
being treated.
A dose or method of administration of the dose of the present
disclosure is not particularly limited. Dosages employed in
practicing the present disclosure will of course vary depending,
e.g. on the mode of administration and the therapy desired. In
general, satisfactory results, are indicated to be obtained on oral
administration at dosages of the order from about 0.01 to 2.0
mg/kg. An indicated daily dosage for oral administration may be in
the range of from about 0.75 mg to 200 mg, conveniently
administered once, or in divided doses 2 to 4 times, daily or in
sustained release form. Unit dosage forms for oral administration
thus for example may comprise from about 0.2 mg to 75 mg or 150 mg,
e.g. from about 0.2 mg or 2.0 mg or 50 mg or 75 mg or 100 mg to 200
mg or 500 mg of any of Crystalline Forms A through F or
combinations thereof, preferably Crystalline Form A, e.g., any of
formulae 1.1-1.77, together with a pharmaceutically acceptable
diluent or carrier therefor.
The Crystalline Forms of the invention may be administered by any
suitable route, including orally, parenterally, transdermally, or
by inhalation, including by sustained release, although various
other known delivery routes, devices and methods can likewise be
employed. In some embodiments, provided is a sustained release
pharmaceutical composition, e.g., an oral sustained release
pharmaceutical composition, comprising any of the Crystalline Forms
of the invention, e.g., Crystalline Form A, e.g., any of formulae
1.1-1.77, over a sustained delivery period of approximately 6 hours
or longer, e.g., 8 hours or longer, e.g., 12 hours or longer, e.g.,
18 hours or longer, e.g., 24 hours or longer. In some embodiments,
provided is an immediate release pharmaceutical composition, e.g.,
an oral immediate release pharmaceutical composition, comprising
any of the Crystalline Forms of the invention, e.g., Crystalline
Form A, e.g., any of formulae 1.1-1.77.
Further dosage and formulation are provided in International
Application No. PCT/US2014/069401 and International Application No.
PCT/US2014/069416, the contents of each of which are hereby
incorporated by reference in their entirety.
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane in
hydrochloric acid addition salt form may be prepared as described
in U.S. Patent Publication No. 2007/0082940 or International
Publication No. WO 2013/019271, both of which are incorporated
herein by reference in their entirety.
While both U.S. Patent Publication No. 2007/0082940 and
International Publication No. WO 2013/019271 describe synthesis of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride, neither discuss any particular crystal form of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride.
The following section illustrates methods of making and
characterizing Crystalline Forms A through F of the invention. Both
thermodynamic and kinetic crystallization techniques are employed.
These techniques are described in more detail below.
Antisolvent Precipitation: Solutions are prepared in various
solvents and filtered through a 0.2-.mu.m nylon filter into a vial.
Antisolvent is then added until precipitation is observed. The
resulting solids are isolated by vacuum filtration and
analyzed.
Crash Cool (CC): Solutions are prepared in various solvents at an
elevated temperature and filtered warm through a 0.2-.mu.m nylon
filter into a pre-cooled vial. The vial is placed in a (dry
ice+isopropanol) cooling bath. Samples are placed into a freezer if
no solids are observed to immediately precipitate. The resulting
solids are isolated by vacuum filtration and analyzed.
Fast Evaporation (FE): Solutions are prepared in various solvents
and sonicated between aliquot additions to assist in dissolution.
Once a mixture reaches complete dissolution, as judged by visual
observation, the solution is filtered through a 0.2-.mu.m nylon
filter. The filtered solution is allowed to evaporate at ambient
conditions in an uncapped vial. Solutions are evaporated to dryness
unless designated as partial evaporations. The solids that formed
are isolated and analyzed.
Freeze-Drying (Lyophilization): Solutions are prepared in 1:1
dioxane: water or water, filtered through a 0.2-.mu.m nylon filter,
and frozen in a vial or flask immersed in a bath of dry ice and
isopropanol. The vial or flask containing the frozen sample is
attached to a Flexi-Dry lyophilizer and dried for a measured time
period. After drying, the solids are isolated and stored in the
freezer over desiccant until use.
Milling: A solid sample is placed into a stainless steel grinding
jar with a grinding ball. The sample is then ground at 30 Hz on a
ball mill (Retsch Mixer Mill model MM200) for a set amount of time.
The solids are collected and analyzed.
Relative Humidity Stress: Solids are stored at approximately
40.degree. C./75% RH condition for a measured time period by
placing the solids into a vial inside a sealed temperature/humidity
chamber at the controlled condition. Samples are analyzed after
removal from the stress environment.
Rotary Evaporation: Solutions of the Compound in hydrochloric acid
addition salt form
((1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride) in HFIPA are prepared. Solids are obtained by rotary
evaporation of the solvent under vacuum, with the sample vial
immersed in a heated water bath at approximately 40.degree. C.
Solids are then dried for an additional approximate 10 minutes
under vacuum at ambient temperature. After evaporation, the solids
are stored in the freezer over desiccant until use.
Slow Cooling (SC): Solutions are prepared in various solvents at an
elevated temperature. The solutions are filtered warm through a
0.2-.mu.m nylon filter into a warm vial. The vial is capped and
left on the hot plate, and the hot plate is turned off to allow the
sample to cool slowly to ambient temperature. If no solids are
present after cooling to ambient temperature, the sample is placed
in a refrigerator and/or freezer for further cooling. Solids are
collected by vacuum filtration and analyzed.
Slow Evaporation (SE): Solutions are prepared in various solvents
and sonicated to assist in dissolution. Once a mixture reaches
complete dissolution, as judged by visual observation, the solution
is filtered through a 0.2-.mu.m nylon filter. The filtered solution
is allowed to evaporate at ambient conditions in a vial covered
with aluminum foil perforated with pinholes. Solutions are
evaporated to dryness unless designated as partial evaporations.
The solids that form are isolated and analyzed.
Slurry Experiments: Suspensions are prepared by adding enough
solids to a given solvent so that excess solids are present. The
mixture is then agitated in a sealed vial at ambient temperature or
an elevated temperature. After a given period of time, the solids
are isolated by vacuum filtration and analyzed.
Vapor Diffusion (VD): Solutions are prepared in various solvents
and filtered through a 0.2-.mu.m nylon filter. The filtered
solution is dispensed into a 1-dram vial, which is then placed
inside a 20-mL vial containing antisolvent. The 1-dram vial is left
uncapped and the 20-mL vial is capped to allow vapor diffusion to
occur. The resulting solids are isolated and analyzed.
Vapor Stress (VS): A solid sample is placed into a 1-dram vial. The
1-dram vial is then placed into a 20-mL vial containing solvent.
The 20-mL vial is capped and left at ambient conditions for a
measured time period. Samples are analyzed after removal from the
stress environment.
XRPD Overlays: The overlays of XRPD patterns are generated using
Pattern Match 2.3.6.
XRPD Indexing: The high-resolution XRPD patterns of Crystalline
Forms of the invention are indexed using X'Pert High Score Plus
(X'Pert High Score Plus 2.2a (2.2.1)) or proprietary software.
Indexing and structure refinement are computational studies.
Instrumental Techniques: The test materials in this study are
analyzed using the instrumental techniques described below.
Differential Scanning Calorimetry (DSC): DSC is performed using a
TA Instruments differential scanning calorimeter. Temperature
calibration is performed using NIST traceable indium metal. The
sample is placed into an aluminum DSC pan, covered with a lid, and
the weight is accurately recorded. A weighed aluminum pan
configured as the sample pan is placed on the reference side of the
cell. The data acquisition parameters and pan configuration are
displayed in the image of each thermogram. The method code on the
thermogram is an abbreviation for the start and end temperature as
well as the heating rate; e.g., -30-250-10 means "from -30.degree.
C. to 250.degree. C., at 10.degree. C./min". The following table
summarizes the abbreviations used in each image for pan
configurations:
TABLE-US-00010 Abbreviation Meaning T0C Tzero crimped pan HS Lid
hermetically sealed HSLP Lid hermetically sealed and perforated
with a laser pinhole C Lid crimped NC Lid not crimped
Thermogravimetric Analysis (TGA): TG analyses are performed using a
TA Instruments thermogravimetric analyzer. Temperature calibration
is performed using nickel and Alumel.TM.. Each sample is placed in
an aluminum pan. The sample is hermetically sealed, the lid
pierced, then inserted into the TG furnace. The furnace is heated
under nitrogen. The data acquisition parameters are displayed in
the image of each thermogram. The method code on the thermogram is
an abbreviation for the start and end temperature as well as the
heating rate; e.g., 25-350-10 means "from 25.degree. C. to
350.degree. C., at 10.degree. C./min".
X-ray Powder Diffraction (XRPD): Inel XRG-300. X-ray powder
diffraction analyses are performed on an Inel XRG-3000
diffractometer, equipped with a curved position-sensitive detector
with a 2.theta. range of 120.degree.. Real time data is collected
using Cu K.alpha. radiation at a resolution of 0.03.degree.
2.theta.. The tube voltage and amperage are set to 40 kV and 30 mA,
respectively. Patterns are displayed from 2.5 to 40.degree.
2.theta. to facilitate direct pattern comparisons. Samples are
prepared for analysis by packing them into thin-walled glass
capillaries. Each capillary is mounted onto a goniometer head that
is motorized to permit spinning of the capillary during data
acquisition. Instrument calibration is performed daily using a
silicon reference standard. The data acquisition and processing
parameters are displayed on each pattern found in the data
section.
X-ray Powder Diffraction (XRPD): Bruker D-8 Discover
Diffractometer. XRPD patterns are collected with a Bruker D-8
Discover diffractometer and Bruker's General Area Diffraction
Detection System (GADDS, v. 4.1.20). An incident beam of Cu
K.alpha. radiation is produced using a fine-focus tube (40 kV, 40
mA), a Gobel mirror, and a 0.5 mm double-pinhole collimator. The
sample is packed between 3-micron thick films to form a portable
disc-shaped specimen. The prepared specimen is loaded in a holder
secured to a translation stage and analyzed in transmission
geometry. The incident beam is scanned and rastered to optimize
orientation statistics. A beam-stop is used to minimize air scatter
from the incident beam at low angles. Diffraction patterns are
collected using a Hi-Star area detector located 15 cm from the
sample and processed using GADDS. Prior to the analysis a silicon
standard is analyzed to verify the Si 111 peak position. The data
acquisition and processing parameters are displayed on each pattern
found in the data section.
X-ray Powder Diffraction (XRPD): PANalytical X'Pert Pro
Diffractometer. XRPD patterns are collected using a PANalytical
X'Pert Pro diffractometer. The specimen is analyzed using Cu
radiation produced using an Optix long fine-focus source. An
elliptically graded multilayer mirror is used to focus the Cu
K.alpha. X-rays of the source through the specimen and onto the
detector. The specimen is sandwiched between 3-micron thick films,
analyzed in transmission geometry, and rotated parallel to the
diffraction vector to optimize orientation statistics. A beam-stop,
short antiscatter extension, antiscatter knife edge, and helium
purge are used to minimize the background generated by air
scattering. Soller slits are used for the incident and diffracted
beams to minimize axial divergence. Diffraction patterns are
collected using a scanning position-sensitive detector
(X'Celerator) located 240 mm from the specimen. The
data-acquisition parameters of each diffraction pattern are
displayed above the image of each pattern in the data section.
Prior to the analysis, a silicon specimen (NIST standard reference
material 640d) is analyzed to verify the position of the silicon
111 peak.
For indexing, agreement between the allowed peak positions, marked
with bars, and the observed peaks indicates a consistent unit cell
determination. Successful indexing of the pattern indicates that
the sample is composed primarily of a single crystalline phase.
Space groups consistent with the assigned extinction symbol, unit
cell parameters, and derived quantities are tabulated below the
figure. To confirm the tentative indexing solution, the molecular
packing motifs within the crystallographic unit cells must be
determined. No attempts at molecular packing are performed.
Abbreviations
acetonitrile (ACN)
birefringence (B)
brine (saturated aqueous solution of sodium chloride)
density (d)
dichloromethane (DCM)
equivalents (eq)
ethanol (EtOH)
ethyl acetate (EtOAc)
extinction (E)
formula weight (FW)
gram (g)
hour or hours (h, hrs)
hexafluoroisopropanol (HFIPA)
high performance (pressure) liquid chromatography (HPLC)
isopropanol (IPA)
isopropyl acetate (IPAc)
isopropyl ether (IPE)
kilogram (kg)
liters (L)
methanol (MeOH)
methyl ethyl ketone (MEK)
minute(s) (min)
milliliters (mL)
molarity of a solution (mol/L) (M)
molecular weight (MW)
moles (mol)
room temperature (RT)
saturated (sat)
sodium hexamethyldisilylazane (NaHMDS)
starting material (SM)
tetrahydrofuran (THF)
2,2,2,-trifluoroethanol (TFE)
versus (vs)
weight (wt)
Example 1--Preparation of Crystalline Form A
TABLE-US-00011 MW d Compound (g/mol) (g/mL) Equivalents Amt/mol
Reaction 2-naphthylacetonitrile 167.21 NA 1.0 mol eq (SM) 1500
g/8.97 mol (S)-(+)-epichlorohydrin 92.52 3.12 1.30 mol eq 1081
g/11.67 mol tetrahydrofuran 72.11 0.889 6.0 ml/g SM 9.0 L 2M sodium
bis(trimethylsilyl)amide 2.0M 0.916 2 mol eq 9.0 L/18.6 mol in THF
2M sodium bis(trimethylsilyl)amide 2.0M 0.916 0.067 mol eq .sup.
0.30 L/0.60 mol in THF borane-dimethylsulfide 10.0M 0.80 2.5 mol eq
2.25 L borane-dimethylsulfide 10.0M 0.80 0.39 mol eq 0.35 L
Isolation 2M HCl (aqueous) 2M NA 11.5 mL/g SM 17.3 L isopropyl
acetate 102.13 0.872 4 mL/g SM 6.0 L water 18.02 1.00 5 mL/g SM 7.5
L ammonia (aqueous) NA 0.889 1.5 mL/g SM 2.25 L isopropyl acetate
102.13 0.872 5 mL/g SM 7.5 L isopropyl acetate 102.13 0.872 5 mL/g
SM 7.5 L 5% aqueous dibasic sodium phosphate NA NA 4 mL/g SM 6.0 L
brine saturated NA NA 4 mL/g SM 6.0 L isopropyl acetate 102.13
0.872 10 mL/g SM 15 L para-toluenesulfonic acid- 190.22 NA 0.93 mol
eq 1586 g/8.34 mol monohydrate isopropyl acetate 102.13 0.872 2
mL/g SM 3.0 L isopropyl acetate 102.13 0.872 2 mL/g SM 3.0 L
Charge 2-naphthylacetonitrile (1500 g, 8.97 mol, SM) to a 3-neck,
50 L round bottom flask equipped with an overhead stirrer, addition
funnel, thermocouple, cooling bath, nitrogen inlet and drying tube.
Charge tetrahydrofuran (6.0 L, 4 mL/g, SM) to the reaction vessel.
Stir at room temperature until all of the 2-naphthylacetonitrile is
dissolved. Charge (S)-(+)-epichlorohydrin (1081 g, 11.67 mol, 1.30
eq) to the reaction vessel. Cool the reaction mixture to an
internal temperature of -28.degree. C. Use dry ice/acetone bath to
cool. Dry ice added to bath intermittently to keep cooling bath
between -35 and -25.degree. C. during sodium
bis(trimethylsilyl)amide addition. Charge a solution of sodium
bis(trimethylsilyl)amide in THF (9.0 L, 18.0 mol, 2 mol eq) to the
addition funnel and slowly add to the chilled reaction mixture at a
rate such that the internal temperature remains at less than
-14.degree. C. Addition requires 1 hr 40 minutes. During the
addition the internal temperature is generally between -20 and
-17.degree. C. After completion of the addition, the resulting
solution is stirred at between -21 and -16.degree. C. for 2 hours
30 minutes. Monitor the reaction by HPLC. Maintain -20 to
-15.degree. C. temperature of the reaction mixture while analyzing
sample by HPLC.
HPLC assay at 2 hr 30 minutes shows reaction is not complete. Add
additional sodium bis(trimethylsilyl)amide in THF (0.30 L, 0.60
mol, 0.067 mole eq) over 10 minutes via addition funnel, keeping
the internal temperature of the reaction mixture less than
-15.degree. C. Stir 15 minutes at which point HPLC assay shows
reaction is complete. Charge borane-dimethylsulfide (2.25 L, 22.5
mol, 2.5 mole eq) complex via addition funnel at a rate such that
the internal temperature of the reaction mixture remains below
0.degree. C. Addition requires 40 minutes. After completion of the
borane addition slowly heat the reaction mixture to 40.degree. C.
Once an internal temperature of 40.degree. C. is obtained
discontinue heating. A slow steady exotherm over approximately two
hours is observed which results in a maximum internal temperature
of 49.degree. C. Upon completion of the exotherm increase the
internal temperature to 60.degree. C. Stir reaction mixture
overnight at 60.degree. C. Monitor the reaction by HPLC. Maintain
60.degree. C. temperature of the reaction mixture while analyzing
sample by HPLC.
Charge additional borane-dimethylsulfide (0.35 L, 0.70 mol, 0.39
mole eq) to reaction mixture via addition funnel. Stir the reaction
mixture 3 hours 30 minutes at 60.degree. C. Cool reaction mixture
to room temperature.
To a second 3-neck, 50 L round bottom flask equipped with an
overhead stirrer, thermocouple, cooling bath, and nitrogen inlet
charge 2M HCl in water (17.3 L, 11.5 mL/g SM, prepared from 2.9 L
concentrated HCl and 14.4 L water). Cool HCl/water solution to
3.degree. C. Slowly transfer room temperature reaction mixture
containing the cyclopropyl amine to the chilled HCl solution at a
rate such that the maximum internal temperature of the quench
mixture is 23.degree. C. Quench requires 2 hr 50 minutes. When the
reaction quench is complete, heat the two phase mixture to
50.degree. C. Stir for one hour at 50.degree. C. Cool to room
temperature. Add isopropylacetate (6.0 L, 4 mL/g SM). Add water
(7.5 L, 5 mL/g SM). Agitate mixture for a minimum of 15 minutes.
Discontinue agitation and allow layers to settle for a minimum of
30 minutes. Discard the organic (upper) layer. Add aqueous ammonia
(2.25 L, 1.5 mL/g SM) to the aqueous layer. Add isopropylacetate
(7.5 L, 5 mL/g). Agitate mixture for a minimum of 15 minutes.
Discontinue agitation and allow layers to settle for a minimum of
30 minutes. Separate layers. Product is in the organic (upper)
layer. Add isopropylacetate (7.5 L, 5 mL/g SM) to aqueous layer.
Agitate mixture for a minimum of 15 minutes. Discontinue agitation
and allow layers to settle for a minimum of 30 minutes. Separate
layers. Product is in the organic (upper) layer. Combine the two
isopropylacetate extracts. Add 5% dibasic sodium phosphate in water
(6.0 L, 4 mL/g SM) to combined extracts. Agitate mixture for a
minimum of 15 minutes. Discontinue agitation and allow layers to
settle for a minimum of 30 minutes. Separate layers and discard
aqueous (lower) layer. Add saturated brine (6.0 L, 4 mL/g SM) to
combined extracts. Agitate mixture for a minimum of 15 minutes.
Discontinue agitation and allow layers to settle for a minimum of
30 minutes. Separate layers and discard aqueous (lower) layer.
Concentrate the final organic layer in a tared 20 L Buchi flask in
vacuo. Obtain a total of 1967.6 g of a light orange waxy solid.
Transfer solids to a 50 L 3-neck round bottom flask equipped with
an overhead stirrer, thermocouple, heating mantel, nitrogen inlet
and drying tube. Add isopropyl acetate (15 L, 10 mL/g SM). Heat the
mixture to 50.degree. C. Add p-toluene sulfonic acid monohydrate
(1586 g, 8.34 mol, 0.93 mole eq) in portions over 30 minutes
keeping the temperature less than 60.degree. C. Upon completion of
the addition discontinue heating and allow the mixture to cool to
room temperature. Collect the solids by filtration. Wash the
filtercake with isopropyl acetate (3 L, 2 mL/g SM). Wash the
filtercake a second time with isopropyl acetate (3 L, 2 mL/g SM).
Dry filtercake to a constant weight in the filter funnel by pulling
air through the cake using vacuum. After an initial drying period
the filtercake is broken up with a spatula and the cake agitated at
intervals to promote drying. Obtain 2049 g of a white solid. HPLC
assay: 98.2% for the main peak and a cis:trans ratio of
98.5:1.5.
TABLE-US-00012 MW d Compound (g/mol) (g/mL) Equivalents Amt/mol
Reaction naphthylcyclopropylamine-tosylate 399.51 NA 1.0 mole eq
2037.9 g/5.10 mol.sup. salt isopropyl acetate 102.13 0.872 6.5 mL/g
SM 13.2 L thionyl chloride 118.97 1.638 1.2 eq 445 mL/6.13 mol 5M
NaOH 5.0M NA 6.0 mol eq 6.1 L/30.5 mol Isolation 1M NaOH 1.0M NA 1
mL/g SM 2.1 L isopropyl acetate (back extraction) 102.13 0.872 3.75
mL/g SM 7.6 L saturated brine NA NA 2 mL/g SM 4.1 L magnesium
sulfate NA NA NA NA isopropylacetate (wash) 102.13 0.872 0.5 mL/g
SM 1.0 L isopropylacetate (dilution) 102.13 0.872 3.5 mL/g SM 7.2 L
hydrogen chloride in isopropyl 5.7M NA 1.0 eq 0.90 L alcohol
isopropylacetate (wash) 102.13 0.872 1.13 mL/g SM 2.3 L
isopropylacetate (wash) 102.13 0.872 1.13 mL/g SM 2.3 L isopropyl
alcohol 60.1 0.786 7.45 mL/g SM 34.6 L isopropyl alcohol 60.1 0.786
1.5 mL/g SM 6.9 L isopropyl alcohol 60.1 0.786 1.5 mL/g SM 6.9 L
Note: Addition of 5M NaOH to the reaction mixture is exothermic and
requires active cooling.
Charge 2039.7 g (5.10 mol, 1.0 mol eq) of the
naphthylcyclopropylamine-tosylate salt obtained above to a 50 L
3-neck round bottom flask equipped with an overhead stirrer,
thermocouple, addition funnel, nitrogen inlet, drying tube and room
temperature water bath. Charge 13.2 L of isopropyl acetate (IPAc,
13.2 L, 6.5 mL/g SM) to the reaction flask and stir at room
temperature to give an white slurry. Add 445 mL of thionyl chloride
(6.13 mol, 1.2 mol eq) via the addition funnel keeping the
temperature less than 25.degree. C. Addition requires 1 hr 5
minutes. Stir the thick slurry at ambient temperature for a minimum
of two hours. Monitor the reaction by HPLC. Maintain the reaction
mixture at ambient temperature while analyzing sample by HPLC. Add
5M NaOH (6.1 L, 30.5 mol, 6.0 mol eq) via addition funnel using an
ice/water bath to keep less than 30.degree. C. Addition requires 1
hr 40 min. Monitor the reaction by HPLC. Maintain the reaction
mixture at ambient temperature while analyzing sample by HPLC. Stir
reaction mixture at 25.degree. C. for 1 hr 5 min then allow layers
to settle. Separate the layers. Wash the organic (upper) layer with
1M NaOH (2.1 L, 1 mL/g SM). Combine the two aqueous layers. Back
extract the combined aqueous layers with isopropylacetate (7.6 L,
3.75 mL/g SM). Combine the washed organic layer and the back
extract. Wash the combined organic layers with saturated brine (4.1
L, 2 mL/g SM). Dry organic layers over granular magnesium sulfate.
Filter to remove solids. Wash filtercake with isopropylacetate (1
L, 0.5 mL/g SM). Concentrate combined filtrate and wash in a 20 L
Buchi Rotavap flask to a total volume of 4.2 L. Transfer to a 22 L
3-neck round bottom flask equipped with overhead stirrer, addition
funnel, thermocouple, cooling bath, nitrogen inlet, and drying
tube. Dilute with isopropylacetate (7.2 L, total volume of
solution=11.4 L, 5.6 mL/g SM). Add hydrogen chloride in isopropyl
alcohol (5.7 M, 0.90 L, 5.13 mol, 1.0 mol eq) via addition funnel
over 50 minutes at a rate such that the internal temperature
remains below 30.degree. C. Stir the slurry for 45 minutes at room
temperature. Filter to collect solids. Wash filtercake with
isopropylacetate (2.3 L, 1.13 mL/g SM). Wash filtercake a second
time with isopropylacetate (2.3 L, 1.13 mL/g SM). Partially dry
filtercake by pulling air through the cake with vacuum. HPLC assay
of the wet cake shows 96.3 area percent purity and an EE of
89.5%.
Combine wet cakes from this experiment and from another batch in a
50 L 3-neck round bottom flask equipped with overhead stirrer,
heating mantel, thermocouple, reflux condenser, nitrogen inlet, and
drying tube. Add isopropyl alcohol (34.6 L, 7.45 mL/g SM). Heat the
slurry to reflux. Maintain reflux for three hours. Discontinue
heating and allow to cool to room temperature. Filter to collect
solids. Wash filtercake with isopropyl alcohol (6.9 L, 1.5 mL/g
SM). Wash filtercake a second time with isopropyl alcohol (6.9 L,
1.5 mL/g SM). Dry filtercake to a constant weight by pulling air
through the cake using vacuum. Obtain 2009 g of product as a tan
solid. HPLC: >99.5%. Chiral HPLC: 95.4%.
TABLE-US-00013 MW d Compound (g/mol) (g/mL) Equivalents Amt/mol
Reaction (1R,5S)-1-(naphthalen-2-yl)-3- 245.74 NA 1.0 2009 g
azabicyclo[3.1.0]hexane hydrochloride ethanol (special industrial)
46.07 0.789 10.7 mL/g 21.5 L Isolation ethanol (SI), wash 46.07
0.789 2.14 mL/g 4.3 L Note: Minimal amount of ethanol necessary to
completely dissolve the starting material should be used.
Charge (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride to a 50 L 3-neck round bottom flask equipped with an
overhead stirrer, thermocouple, reflux condenser, heating mantel,
nitrogen inlet and drying tube. Add ethanol (20 L, mL/g SM). Heat
the stirred slurry to 77.degree. C. Add additional ethanol in 0.5 L
aliquots and return mixture to reflux until all solids dissolve.
Complete dissolution after the addition of 1.5 L additional
ethanol, 21.5 L total. Discontinue heating and allow solution to
cool to room temperature. Filter to collect solids. Wash filtercake
with ethanol (4.3 L, 2.14 mL/g SM). Dry filtercake to a constant
weight by pulling air through the filtercake using vacuum. Obtain
1435 g of light tan solids. Yield=74%. HPLC: 99.5%. Chiral HPLC:
99.9%.
TABLE-US-00014 MW d Compound (g/mol) (g/mL) Equivalents Amt/mol
Reaction (1R,5S)-1-(naphthalen-2-yl)-3- 245.74 NA 1.0 mol eq 1406
g/5.72 mol azabicyclo[3.1.0]hexane hydrochloride (SM) water 18.02
1.0 10 mL/g SM 14.0 tetrahydrofuran 72.11 0.889 2 mL/g SM 2.8 L
isopropylacetate 102.13 0.872 2 mL/g SM 2.8 L Isolation ammonia
(aqueous) 15.0M 0.90 3.0 mol eq 1.14 L/17.1 mol isopropyl acetate
102.13 0.872 10 mL/g SM 14.0 L magnesium sulfate NA NA NA NA
isopropyl acetate (wash) 102.13 0.872 1.42 mL/g SM 2.0 L isopropyl
alcohol 60.1 0.786 10 mL/g SM 14.0 L hydrogen chloride in isopropyl
5.7M NA 0.84 mol eq 845 mL alcohol hydrogen chloride in isopropyl
5.6M NA 0.11 mol eq 110 mL alcohol hydrogen chloride in isopropyl
5.6M NA 0.06 mol eq 60 mL alcohol isopropyl alcohol (wash one) 60.1
0.786 2.0 mL/g SM 2.8 L isopropyl alcohol (wash two) 60.1 0.786 2.0
mL/g SM 2.8 L
Charge the Compound in hydrochloric acid addition salt form
((1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride) (1406 g, 5.72 mol, 1.0 mol eq) (the compound
obtained from the step above and another batch) to a 22 L, 3-neck
round bottom flask equipped with an overhead stirrer, heating
mantel, thermocouple, and nitrogen inlet. Add water (14 L, 10 mL/g
SM). Heat the slurry to an internal temperature of 34.degree. C. to
dissolve all solids. Transfer to a large separatory funnel. Add
tetrahydrofuran (2.8 L, 2 mL/g SM). Add isopropylacetate (2.8 L, 2
mL/g SM). Discontinue stirring and allow layers to separate.
Discard the organic (upper) layer. Product is in the lower
(aqueous) layer. To the aqueous (lower) layer add aqueous ammonia
(1.14 L, 17.1 mol, 3.0 mol eq). Add isopropylacetate (14.0 L, 10
mL/g SM). Agitate mixture for a minimum of 15 minutes. Discontinue
agitation and allow layers to settle for a minimum of 30 minutes.
Separate the layers. Product is in the organic (upper) layer. Add
granular magnesium sulfate to the organic layer. Filter to remove
solids. Wash the filtercake with isopropylacetate (1 L). Wash the
filtercake a second time with isopropylacetate (1 L). Concentrate
combined filtrate and washes in a 20 L Buchi rotavap flask to give
an off-white solid. Charge solid to a 22 L round bottom flask
equipped with overhead stirrer, thermocouple, addition funnel,
nitrogen inlet and drying tube. Add isopropyl alcohol (14 L, 10
mL/g SM). Stir at room temperature to dissolve all solids. Charge
5.7 N HCl in IPA (175 mL, 1.0 mol, 0.17 mol eq) via addition funnel
over 10 minutes to form white solids. Stir the thin slurry at room
temperature for 30 minutes. Charge 5.7 N HCl in IPA (670 mL, 3.82
mol, 0.67 mol eq) followed by 5.6 N HCl in IPA (110 mL, 0.62 mol,
0.11 mol eq) via addition funnel over 55 minutes. Stir the slurry
for 35 minutes then assay the mother liquors for loss. Add 5.6 N
HCl in IPA (60 mL, 0.34 mol, 0.06 mol eq) over 10 minutes via
addition funnel. Stir the slurry for 30 minutes then assay the
mother liquors for loss. Filter to collect solids. Wash filtercake
with isopropyl alcohol (2.8 L, 2 mL/g SM). Wash filtercake a second
time with isopropyl alcohol (2.8 L, 2 mL/g SM). Dry filtercake to a
constant weight by pulling air through the filtercake using vacuum.
Obtain 1277 g of product as an off-white solid. HPLC: 99.9%.
The resulting compound exhibits a crystalline XRPD pattern (FIG.
1), and is designated as Crystalline Form A. The XRPD pattern is
collected with a PANalytical X'Pert PRO MPD diffractometer using an
incident beam of Cu radiation produced using an Optix long,
fine-focus source. An elliptically graded multilayer mirror is used
to focus Cu K.alpha. X-rays through the specimen and onto the
detector. Prior to the analysis, a silicon specimen (NIST SRM 640d)
is analyzed to verify the Si 111 peak position. A specimen of the
sample is sandwiched between 3-.mu.m-thick films and analyzed in
transmission geometry. A beam-stop, short anti-scatter extension,
and an anti-scatter knife edge are used to minimize the background
generated by air. Soller slits for the incident and diffracted
beams are used to minimize broadening from axial divergence. The
diffraction pattern is collected using a scanning
position-sensitive detector (X'Celerator) located 240 mm from the
specimen and Data Collector software v. 2.2b. The experimental XRPD
pattern is collected according to cGMP specifications. The XRPD
pattern collected is shown in FIG. 1 (Panalytical X-Pert Pro MPD
PW3040 Pro, X-ray Tube: Cu (1.54059 .ANG.), Voltage: 45 kV,
Amperage: 40 mA, Scan Range: 1.01-40.00.degree. 2.theta., Step
Size: 0.017.degree. 2.theta., Collection Time: 1939 s, Scan Speed:
1.2.degree./min., Slit: DS: 1/2.degree., SS: null, Revolution Time:
1.0 s, Mode: Transmission).
Thermal analysis results are shown in FIG. 2 (DSC, Size: 1.7800 mg,
Method: (-30)-300-10, TOC; TGA, Size: 6.8320 mg, Method:
00-350-10). By TGA, Crystalline Form A exhibits approximately 0.4%
weight loss up to 200.degree. C. The dramatic weight change in the
TGA at approximately 276.degree. C. is consistent with
decomposition. The DSC thermogram (FIG. 2) displays multiple
endotherms between approximately 245 and 248.degree. C. concurrent
with the dramatic weight change by TGA, suggesting overlapping
events are occurring during heating.
Characterization data for Crystalline Form 1 are summarized in
Table 1 below:
TABLE-US-00015 TABLE 1 Analysis Result DSC.sup.a 247.degree. C.
(endo, peak; 245.degree. C. onset); 248.degree. C. (endo,
shoulder); 248.degree. C. (endo, peak) TGA.sup.a 0.4% weight loss
up to 200.degree. C. 276.degree. C. (onset, decomposition)
.sup.aTemperatures are rounded to the nearest .degree. C.; weight
loss values are rounded to one decimal place.
Based on the dynamic vapor sorption/desorption data collected (FIG.
3), Crystalline Form A obtained is a non-hygroscopic material. Upon
initial equilibration at 5% RH, Crystalline Form A shows a weight
loss of 0.03%; a weight gain of 0.10% is observed from 5% to 95%
RH. During the desorption step from 95% to 5% RH, Crystalline Form
A exhibits approximately 0.10% weight loss.
Post-moisture balance material is similar to starting material by
XRPD (FIG. 50).
Data Acquisition Parameters for Dynamic Vapor Sorption/Desorption
Isotherm:
TABLE-US-00016 Notes Range 5% to 95% 25.degree. C. at 10%
increments Drying OFF Max Equil Time 180 min Equil Crit 0.0100 wt %
in 5.00 min T-RH Steps 25, 5; 25, 15; 25, 25; 25, 35; 25, 45; 25,
55; 25, 65; 25, 75; 25, 85; 25, 95; 25, 85; 25, 75; 25, 65; 25, 55;
25, 45; 25, 35; 25, 25; 25, 15; 25, 5 Data Logging 2.00 min or
0.0100 wt % Interval Step Elap Samp Time Time Weight Weight Temp
Samp min min mg % chg deg C. RH % n/a 0.1 11.532 0.000 25.20 1.70
13.1 13.2 11.528 -0.034 25.18 5.06 11.5 24.7 11.529 -0.025 25.19
15.24 13.0 37.7 11.529 -0.024 25.22 24.81 13.0 50.7 11.530 -0.019
25.21 34.82 17.0 67.7 11.530 -0.016 25.21 44.81 25.0 92.7 11.531
-0.012 25.20 54.86 28.3 121.0 11.532 -0.005 25.20 64.82 12.8 133.8
11.533 0.005 25.20 74.66 13.0 146.8 11.535 0.024 25.19 84.55 13.3
160.0 11.540 0.068 25.19 94.54 10.8 170.8 11.536 0.037 25.18 85.08
11.0 181.8 11.534 0.019 25.18 75.28 13.0 194.8 11.532 0.003 25.18
64.96 13.0 207.8 11.531 -0.007 25.18 55.08 13.0 220.8 11.531 -0.013
25.18 45.09 13.0 233.8 11.530 -0.016 25.18 35.13 13.0 246.8 11.530
-0.021 25.17 25.12 21.0 267.8 11.529 -0.025 25.17 15.20 10.0 277.8
11.528 -0.032 25.17 4.95
Example 2--Preparation of Crystals of Form A
Solution of the Compound in hydrochloric acid addition salt form
((1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride) is prepared using 98.5 mg of the Compound from
Example 1 in 2 mL methanol and filtered through a 0.2-.mu.m nylon
filter. A 0.5 mL aliquot of the filtered solution is dispensed into
a 1-dram open vial, which is then placed inside a 20-mL vial
containing 3 mL antisolvent ethyl acetate. The 1-dram vial is left
uncapped and the 20-mL vial is capped to allow vapor diffusion to
occur. Single crystals are grown in the 1-dram vial after
approximately 7 days.
Data Collection: A colorless plate of C.sub.15H.sub.16ClN [Cl,
C.sub.15H.sub.16N] having approximate dimensions of
0.38.times.0.30.times.0.18 mm, is mounted on a fiber in random
orientation. Preliminary examination and data collection are
performed with Mo K.alpha. radiation (.lamda.=0.71073 .ANG.) on a
Nonius Kappa CCD diffractometer equipped with a graphite crystal,
incident beam monochromator. Refinements are performed using
SHELX97 (Sheldrick, G. M. Acta Cryst., 2008, A64, 112). Cell
constants and an orientation matrix for data collection are
obtained from least-squares refinement using the setting angles of
5812 reflections in the range 1.degree.<.theta.<27.degree..
The refined mosaicity from DENZO/SCALEPACK is 0.38.degree.
indicating good crystal quality (Otwinowski, Z.; Minor, W. Methods
Enzymol. 1997, 276, 307). The space group is determined by the
program XPREP (Bruker, XPREP in SHELXTL v. 6.12, Bruker AXS Inc.,
Madison, Wis., USA, 2002). From the systematic presence of the
following conditions: h00 h=2n; 0k0 k=2n; 00l l=2n, and from
subsequent least-squares refinement, the space group is determined
to be P2.sub.12.sub.12.sub.1 (no. 19). The data are collected to a
maximum 2.theta. value of 55.71.degree., at a temperature of
150.+-.1 K.
Data Reduction: Frames are integrated with DENZO-SMN (Otwinowski,
Z.; Minor, W. Methods Enzymol. 1997, 276, 307). A total of 5812
reflections are collected, of which 2930 are unique. Lorentz and
polarization corrections are applied to the data. The linear
absorption coefficient is 0.273 mm.sup.-1 for Mo K.alpha.
radiation. An empirical absorption correction using SCALEPACK
(Otwinowski, Z.; Minor, W. Methods Enzymol. 1997, 276, 307) is
applied. Transmission coefficients range from 0.953 to 0.953.
Intensities of equivalent reflections are averaged. The agreement
factor for the averaging is 2.9% based on intensity.
Structure Solution and Refinement: The structure is solved by
direct methods using SIR2004 (Burla, M. C., Caliandro, R., Camalli,
M., Carrozzini, B., Cascarano, G. L., De Caro, L., Giacovazzo, C.,
Polidori, G., and Spagna, R., J. Appl. Cryst. 2005, 38, 381). The
remaining atoms are located in succeeding difference Fourier
syntheses. Hydrogen atoms are included in the refinement but
restrained to ride on the atom to which they are bonded. The
structure is refined in full-matrix least-squares by minimizing the
function: .SIGMA.w(|F.sub.o|.sup.2-|F.sub.c|.sup.2).sup.2 The
weight w is defined as
1/[.sigma..sup.2(F.sub.o.sup.2)+(0.0384P).sup.2+(0.2436P)], where
P=(F.sub.o.sup.2+2F.sub.c.sup.2)/3. Scattering factors are taken
from the "International Tables for Crystallography" (International
Tables for Crystallography, Vol. C, Kluwer Academic Publishers:
Dordrecht, The Netherlands, 1992, Tables 4.2.6.8 and 6.1.1.4). Of
the 2930 reflections used in the refinements, only the reflections
with F.sub.o.sup.2>2.sigma.(F.sub.o.sup.2) are used in
calculating R. A total of 2678 reflections are used in the
calculation. The final cycle of refinement includes 162 variable
parameters and converges (largest parameter shift is <0.01 times
its estimated standard deviation) with unweighted and weighted
agreement factors of:
R=.SIGMA.|F.sub.o-F.sub.c|/.SIGMA.F.sub.o=0.033 R.sub.w= {square
root over
((.SIGMA.w(F.sub.o.sup.2-F.sub.c.sup.2).sup.2/.SIGMA.w(F.sub.o.sup.2-
).sup.2))}=0.080 The standard deviation of an observation of unit
weight (goodness of fit) is 1.066. The highest peak in the final
difference Fourier has a height of 0.19 e/.ANG..sup.3. The minimum
negative peak has a height of -0.24 e/.ANG..sup.3. The Flack factor
for the determination of the absolute structure (Flack, H. D. Acta
Cryst. 1983, A39, 876) refines to -0.02(6).
Calculated X-Ray Powder Diffraction (XRPD) Pattern: A calculated
XRPD pattern is generated for Cu radiation using PowderCell 2.3
(PowderCell for Windows Version 2.3 Kraus, W.; Nolze, G. Federal
Institute for Materials Research and Testing, Berlin Germany, E U,
1999) and the atomic coordinates, space group, and unit cell
parameters from the single crystal data. Because the single crystal
data are collected at low temperatures (150 K), peak shifts may be
evident between the pattern calculated from low temperature data
and the room temperature experimental powder diffraction pattern,
particularly at high diffraction angles.
ORTEP and Packing Diagrams: The ORTEP diagram is prepared using the
ORTEP III (Johnson, C. K. ORTEPIII, Report ORNL-6895, Oak Ridge
National Laboratory, TN, U.S.A. 1996. OPTEP-3 for Windows V1.05,
Farrugia, L. J., J. Appl. Cryst. 1997, 30, 565) program within the
PLATON (Spek, A. L. PLATON. Molecular Graphics Program. Utrecht
University, Utrecht, The Netherlands, 2008. Spek, A. L, J. Appl.
Cryst. 2003, 36, 7) software package. Atoms are represented by 50%
probability anisotropic thermal ellipsoids. Packing diagrams are
prepared using CAMERON (Watkin, D. J.; Prout, C. K.; Pearce, L. J.
CAMERON, Chemical Crystallography Laboratory, University of Oxford,
Oxford, 1996) modeling software. Assessment of chiral centers are
performed with the PLATON (Spek, A. L. PLATON. Molecular Graphics
Program. Utrecht University, Utrecht, The Netherlands, 2008. Spek,
A. L, J. Appl. Cryst. 2003, 36, 7) software package. Absolute
configuration is evaluated using the specification of molecular
chirality rules (Cahn, R. S.; Ingold, C; Prelog, V. Angew. Chem.
Intern. Ed. Eng., 1966, 5, 385; Prelog, V. G. Helmchen Angew. Chem.
Intern. Ed. Eng., 1982, 21, 567). Additional figures are generated
with the Mercury 2.4 (Macrae, C. F. Edgington, P. R. McCabe, P.
Pidcock, E. Shields, G. P. Taylor, R. Towler M. and van de Streek,
J.; J. Appl. Cryst., 2006, 39, 453-457) visualization package.
Hydrogen bonding is represented as dashed lines.
Results: The orthorhombic cell parameters and calculated volume
are: a=5.7779(2) .ANG., b=8.6633(2) .ANG., c=25.7280(8) .ANG.,
.alpha.=.beta.=.gamma.=90.degree., V=1287.83(7) .ANG..sup.3. The
formula weight of the asymmetric unit in the crystal structure is
245.75 g mol.sup.-1 with Z=4, resulting in a calculated density of
1.267 g cm.sup.-3. The space group is determined to be
P2.sub.12.sub.12.sub.1. A summary of the crystal data and
crystallographic data collection parameters are provided in Table 2
below.
The R-value is 0.033 (3.3%).
An ORTEP drawing of Crystalline Form A is shown in FIG. 18.
The asymmetric unit, shown in FIG. 18, contains a protonated
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane molecule and
a chloride counter ion. The proton is located in the difference map
and allowed to refine freely on the nitrogen, indicating salt
formation.
Packing diagrams viewed along the a, b, and c crystallographic axes
are shown in FIGS. 19-21, respectively. Hydrogen bonding occurs
between the chlorine and nitrogen atoms, and the structure consists
of infinite one-dimensional hydrogen bonded chains along the
crystallographic a axis, shown in FIG. 22.
The absolute structure can be determined through an analysis of
anomalous X-ray scattering by the crystal. A refined parameter x,
known as the Flack parameter (Flack, H. D.; Bernardinelli, G., Acta
Cryst., 1999, A55, 908; Flack, H. D.; Bernardinelli, G., J. Appl.
Cryst., 2000, 33, 1143), encodes the relative abundance of the two
components in an inversion twin. The structure contains a fraction
1-x of the model being refined, and x of its inverse. Provided that
a low standard uncertainty is obtained, the Flack parameter should
be close to 0 if the solved structure is correct, and close to 1 if
the inverse model is correct. The measured Flack parameter for the
structure of Crystalline Form A shown in FIG. 18 is -0.02 with a
standard uncertainty of 0.06.
After a structure is solved the quality of the data may be assessed
for its inversion-distinguishing power, which is done by an
examination of the standard uncertainty of the Flack parameter. For
Crystalline Form A, the standard uncertainty, (u), equals 0.06,
which indicates strong inversion-distinguishing power. The compound
is enantiopure and absolute structure can be assigned directly from
the crystal structure.
Refinement of the Flack parameter (x) (Flack, H. D. Acta Cryst.
1983, A39, 876) does not result in a quantitative statement about
the absolute structure assignment. However, an approach applying
Bayesian statistics to Bijvoet differences can provide a series of
probabilities for different hypotheses of the absolute structure
(Hooft, R. W., J. Appl. Cryst., 2008, 41, 96-103; Bijvoet, J. M.;
Peederman, A. F.; van Bommel, A. J., Nature 1951, 168, 271). This
analysis provides a Flack equivalent (Hooft) parameter in addition
to probabilities that the absolute structure is either correct,
incorrect or a racemic twin. For the current data set the Flack
equivalent (Hooft) parameter is determined to be -0.01(3), the
probability that the structure is correct is 1.000, the probability
that the structure is incorrect is 0.000 and the probability that
the material is a racemic twin is 0.4.sup.-59.
The structure contains two chiral centers located at C11 and C15
(see FIG. 18, ORTEP drawing), which are assigned as R and S
configuration, respectively.
FIG. 23 shows a calculated X-ray powder diffraction pattern of
Crystalline Form A, generated from the single crystal data.
The experimental X-ray powder diffraction pattern of Crystalline
Form A is shown in FIG. 1.
The experimental XRPD of Crystalline Form A from FIG. 1 is overlaid
with the calculated pattern in FIG. 34.
Differences in intensities between the calculated and experimental
x-ray powder diffraction patterns often are due to preferred
orientation. Preferred orientation is the tendency for crystals to
align themselves with some degree of order. This preferred
orientation of the sample can significantly affect peak
intensities, but not peak positions, in the experimental powder
diffraction pattern. Furthermore, some shift in peak position
between the calculated and experimental powder diffraction patterns
may be expected because the experimental powder pattern is
collected at ambient temperature and the single crystal data is
collected at 150 K. Low temperatures are used in single crystal
analysis to improve the quality of the structure but can contract
the crystal resulting in a change in the unit cell parameters,
which is reflected in the calculated powder diffraction pattern.
These shifts are particularly evident at high diffraction
angles.
Tables of positional parameters and their estimated standard
deviations (Table 3), anisotropic temperature factor coefficients
(Table 4), bond distances (Table 5), bond angles (Table 6),
hydrogen bonds and angles (Table 7) and torsion angles (Table 8)
are provided below.
TABLE-US-00017 TABLE 2 Crystal Data and Data Collection Parameters
for (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride Form A (Crystalline Form A) formula
C.sub.15H.sub.16ClN formula weight 245.75 space group
P2.sub.12.sub.12.sub.1 (No. 19) a, .ANG. 5.7779(2) b, .ANG.
8.6633(2) c, .ANG. 25.7280(8) V, .ANG..sup.3 1287.83(7) Z 4
d.sub.calc, g cm.sup.-3 1.267 crystal dimensions, mm 0.38 .times.
0.30 .times. 0.18 temperature, K 150 radiation (wavelength, .ANG.)
Mo K.sub..alpha. (0.71073) monochromator graphite linear abs coef,
mm.sup.-1 0.273 absorption correction applied empirical.sup.a
transmission factors: min, max 0.953, 0.953 diffractometer Nonius
Kappa CCD h, k, l range -7 to 7 -11 to 11 -33 to 33 2.theta. range,
deg 1.58-55.71 mosaicity, deg 0.38 programs used SHELXTL F.sub.000
520.0 weighting 1/[.sigma..sup.2(F.sub.o.sup.2) + (0.0384P).sup.2 +
0.2436P] where P = (F.sub.o.sup.2 + 2F.sub.c.sup.2)/3 data
collected 5812 unique data 2930 R.sub.int 0.029 data used in
refinement 2930 cutoff used in R-factor calculations F.sub.o.sup.2
> 2.0.sigma.(F.sub.o.sup.2) data with I > 2.0.sigma.(I) 2678
number of variables 162 largest shift/esd in final cycle 0.00
R(F.sub.o) 0.033 R.sub.w(F.sub.o.sup.2) 0.080 goodness of fit 1.066
absolute structure determination Flack parameter.sup.b (-0.02(6))
Hooft parameter.sup.c (-0.01(3)) Friedel Coverage 90%
.sup.aOtwinowski, Z.; Minor, W. Methods Enzymol. 1997, 276, 307.
.sup.bFlack, H. D. Acta Cryst., 1983 A39, 876. .sup.cHooft, R. W.
W., Straver, L. H., and Spek, A. L. J. Appl. Cryst., 2008, 41,
96-103.
TABLE-US-00018 TABLE 3 Positional Parameters and Their Estimated
Standard Deviations for Crystalline Form A Atom x y z
U(.ANG..sup.2) Cl1 -0.21843(7) 1.09587(4) 0.483829(15) 0.02856(9)
N13 0.2878(3) 1.04618(14) 0.53004(5) 0.0234(3) C1 0.4183(3)
0.93704(19) 0.70605(6) 0.0294(4) C2 0.2847(3) 0.88296(17)
0.66572(6) 0.0268(4) C3 0.0828(3) 0.7983(2) 0.67700(7) 0.0380(5) C4
0.0151(3) 0.7719(3) 0.72723(8) 0.0426(6) C5 0.1497(3) 0.8274(2)
0.76923(7) 0.0340(5) C6 0.0855(4) 0.8007(3) 0.82173(8) 0.0465(6) C7
0.2208(4) 0.8543(2) 0.86149(7) 0.0483(6) C8 0.4249(4) 0.9340(2)
0.85125(7) 0.0447(6) C9 0.4915(4) 0.9627(2) 0.80087(7) 0.0391(5)
C10 0.3549(3) 0.9099(2) 0.75855(6) 0.0294(4) C11 0.3521(3)
0.91598(19) 0.61066(6) 0.0261(4) C12 0.2704(3) 1.06743(16)
0.58785(5) 0.0270(4) C14 0.2577(3) 0.87808(16) 0.51906(6) 0.0282(4)
C15 0.3409(3) 0.7984(2) 0.56741(7) 0.0314(5) C16 0.5712(3)
0.8497(2) 0.58846(7) 0.0352(5) H131 0.436(4) 1.082(2) 0.5177(8)
0.036(5)* H132 0.168(4) 1.105(2) 0.5138(7) 0.039(5)* H1 0.555 0.993
0.699 0.035 H3 -0.008 0.759 0.649 0.046 H4 -0.123 0.716 0.734 0.051
H6 -0.052 0.745 0.829 0.056 H7 0.175 0.837 0.896 0.058 H8 0.519
0.969 0.879 0.054 H9 0.630 1.018 0.794 0.047 H15 0.285 0.692 0.575
0.038 H12A 0.109 1.089 0.598 0.032 H12B 0.370 1.154 0.600 0.032
H14A 0.351 0.847 0.489 0.034 H14B 0.093 0.853 0.512 0.034 H16A
0.659 0.776 0.610 0.042 H16B 0.667 0.918 0.566 0.042 Starred atoms
are refined isotropically U.sub.eq =
(1/3).SIGMA..sub.i.SIGMA..sub.j
U.sub.ija*.sub.ia*.sub.ja.sub.i.a.sub.j Hydrogen atoms are included
in calculation of structure factors but not refined
TABLE-US-00019 TABLE 4 Anisotropic Temperature Factor Coefficients
- U's for Crystalline Form A Name U(1, 1) U(2, 2) U(3, 3) U(1, 2)
U(1, 3) U(2, 3) C11 0.02543(19) 0.02561(17) 0.03463(19) 0.00075(15)
0.00262(16) 0.00196(16- ) N13 0.0268(7) 0.0213(6) 0.0222(6)
0.0008(6) -0.0013(6) -0.0002(5) C1 0.0292(9) 0.0301(9) 0.0290(8)
-0.0056(7) 0.0005(7) 0.0014(7) C2 0.0258(8) 0.0290(8) 0.0256(7)
0.0017(7) -0.0019(6) 0.0053(6) C3 0.0278(9) 0.0550(12) 0.0313(9)
-0.0099(9) -0.0063(8) 0.0089(8) C4 0.0286(10) 0.0605(13) 0.0388(11)
-0.0118(10) -0.0015(8) 0.0154(10) C5 0.0326(10) 0.0394(10)
0.0301(8) 0.0019(8) 0.0016(7) 0.0094(8) C6 0.0458(12) 0.0584(13)
0.0354(10) -0.0020(11) 0.0068(10) 0.0160(9) C7 0.0664(14)
0.0518(11) 0.0266(8) 0.0055(12) 0.0037(10) 0.0084(8) C8 0.0628(14)
0.0437(12) 0.0276(9) 0.0012(10) -0.0062(9) -0.0020(8) C9 0.0479(12)
0.0386(10) 0.0309(10) -0.0053(9) -0.0015(8) -0.0037(8) C10
0.0334(9) 0.0282(8) 0.0265(8) 0.0020(7) -0.0002(6) 0.0017(7) C11
0.0252(8) 0.0282(8) 0.0249(7) -0.0008(7) -0.0014(6) 0.0018(7) C12
0.0352(9) 0.0244(7) 0.0215(7) -0.0015(7) 0.0001(7) -0.0019(5) C14
0.0343(8) 0.0221(7) 0.0283(7) 0.0013(6) -0.0041(7) -0.0040(6) C15
0.0393(11) 0.0245(8) 0.0303(8) 0.0047(7) -0.0011(7) 0.0004(7) C16
0.0308(9) 0.0452(10) 0.0297(8) 0.0105(8) 0.0006(7) 0.0081(8) The
form of the anisotropic temperature factor is: exp[-2.pi.
h.sup.2a*.sup.2U(1, 1) + k.sup.2b*.sup.2U(2, 2) +
l.sup.2c*.sup.2U(3, 3) + 2hka*b*U(1, 2) + 2hla*c*U(1, 3) +
2klb*c*U(2, 3)] where a*, b*, and c* are reciprocal lattice
constants.
TABLE-US-00020 TABLE 5 Bond Distances in Angstroms for Crystalline
Form A Atom 1 Atom 2 Distance Atom 1 Atom 2 Distance N13 C14
1.4936(18) C7 H7 0.950 N13 C12 1.5023(18) C8 C9 1.375(3) N13 H131
0.96(2) C8 H8 0.950 N13 H132 0.96(2) C9 C10 1.420(3) C1 C2 1.376(2)
C9 H9 0.950 C1 C10 1.419(2) C11 C16 1.503(2) C1 H1 0.950 C11 C15
1.510(2) C2 C3 1.408(2) C11 C12 1.513(2) C2 C11 1.497(2) C12 H12A
0.990 C3 C4 1.370(3) C12 H12B 0.990 C3 H3 0.950 C14 C15 1.501(2) C4
C5 1.415(3) C14 H14A 0.990 C4 H4 0.950 C14 H14B 0.990 C5 C10
1.412(3) C15 C16 1.504(3) C5 C6 1.420(3) C15 H15 1.000 C6 C7
1.369(3) C16 H16A 0.990 C6 H6 0.950 C16 H16B 0.990 C7 C8 1.391(3)
Numbers in parentheses are estimated standard deviations in the
least significant digits.
TABLE-US-00021 TABLE 6 Bond Angles in Degrees for Crystalline Form
A Atom 1 Atom 2 Atom 3 Angle Atom 1 Atom 2 Atom 3 Angle C14 N13 C12
107.39(11) C5 C10 C1 119.08(16) C14 N13 H131 110.6(12) C5 C10 C9
118.71(16) C12 N13 H131 110.3(12) C1 C10 C9 122.21(17) C14 N13 H132
110.8(13) C2 C11 C16 120.40(14) C12 N13 H132 108.7(12) C2 C11 C15
123.87(14) H131 N13 H132 109.2(16) C16 C11 C15 59.90(12) C2 C1 C10
121.10(16) C2 C11 C12 116.85(14) C2 C1 H1 119.50 C16 C11 C12
116.53(15) C10 C1 H1 119.50 C15 C11 C12 106.60(13) C1 C2 C3
119.14(15) N13 C12 C11 104.89(12) C1 C2 C11 120.17(15) N13 C12 H12A
110.80 C3 C2 C11 120.69(15) C11 C12 H12A 110.80 C4 C3 C2 121.22(17)
N13 C12 H12B 110.80 C4 C3 H3 119.40 C11 C12 H12B 110.80 C2 C3 H3
119.40 H12A C12 H12B 108.80 C3 C4 C5 120.43(18) N13 C14 C15
104.74(12) C3 C4 H4 119.80 N13 C14 H14A 110.80 C5 C4 H4 119.80 C15
C14 H14A 110.80 C10 C5 C4 119.01(16) N13 C14 H14B 110.80 C10 C5 C6
119.16(17) C15 C14 H14B 110.80 C4 C5 C6 121.82(18) H14A C14 H14B
108.90 C7 C6 C5 120.4(2) C14 C15 C16 116.45(15) C7 C6 H6 119.80 C14
C15 C11 108.31(14) C5 C6 H6 119.80 C16 C15 C11 59.81(11) C6 C7 C8
120.71(18) C14 C15 H15 119.20 C6 C7 H7 119.60 C16 C15 H15 119.20 C8
C7 H7 119.60 C11 C15 H15 119.20 C9 C8 C7 120.36(19) C11 C16 C15
60.29(12) C9 C8 H8 119.80 C11 C16 H16A 117.70 C7 C8 H8 119.80 C15
C16 H16A 117.70 C8 C9 C10 120.6(2) C11 C16 H16B 117.70 C8 C9 H9
119.70 C15 C16 H16B 117.70 C10 C9 H9 119.70 H16A C16 H16B 114.90
Numbers in parentheses are estimated standard deviations in the
least significant digits.
TABLE-US-00022 TABLE 7 Hydrogen Bond Distances in Angstroms and
Angles in Degrees for Crystalline Form A D H A D-H A-H D-A D-H-A
N13 H131 C11 0.96(2) 2.18(2) 3.121(2) 164.1(15) N13 H132 C11
0.96(2) 2.36(2) 3.187(2) 144.0(15) N13 H132 C11 0.96(2) 2.674(18)
3.1217(19) 109.2(14) Numbers in parentheses are estimated standard
deviations in the least significant digits.
TABLE-US-00023 TABLE 8 Torsion Angles in Degrees for Crystalline
Form A Atom 1 Atom 2 Atom 3 Atom 4 Angle C14 N13 C12 C11 28.20
(0.18) C12 N13 C14 C15 -27.51 (0.18) C10 C1 C2 C3 -0.50 (0.25) C10
C1 C2 C11 178.63 (0.15) C2 C1 C10 C5 -0.71 (0.25) C2 C1 C10 C9
179.13 (0.16) C1 C2 C3 C4 1.39 (0.26) C11 C2 C3 C4 -177.73 (0.18)
C1 C2 C11 C12 -85.92 (0.20) C1 C2 C11 C15 137.54 (0.17) C1 C2 C11
C16 65.41 (0.21) C3 C2 C11 C12 93.19 (0.19) C3 C2 C11 C15 -43.34
(0.24) C3 C2 C11 C16 -115.47 (0.18) C2 C3 C4 C5 -1.05 (0.30) C3 C4
C5 C6 -179.38 (0.20) C3 C4 C5 C10 -0.18 (0.30) C4 C5 C6 C7 179.21
(0.21) C10 C5 C6 C7 0.02 (0.46) C4 C5 C10 C1 1.04 (0.26) C4 C5 C10
C9 -178.80 (0.18) C6 C5 C10 C1 -179.74 (0.18) C6 C5 C10 C9 0.42
(0.27) C5 C6 C7 C8 -0.85 (0.33) C6 C7 C8 C9 1.25 (0.30) C7 C8 C9
C10 -0.80 (0.29) C8 C9 C10 C1 -179.87 (0.17) C8 C9 C10 C5 -0.03
(0.25) C2 C11 C12 N13 -160.97 (0.14) C15 C11 C12 N13 -17.56 (0.17)
C16 C11 C12 N13 46.58 (0.18) C2 C11 C15 C14 141.11 (0.16) C2 C11
C15 C16 -108.36 (0.18) C12 C11 C15 C14 0.94 (0.18) C12 C11 C15 C16
111.47 (0.15) C16 C11 C15 C14 -110.53 (0.16) C2 C11 C16 C15 114.01
(0.17) C12 C11 C16 C15 -94.57 (0.15) N13 C14 C15 C11 16.15 (0.18)
N13 C14 C15 C16 -48.59 (0.19) C14 C15 C16 C11 96.68 (0.16) Numbers
in parentheses are estimated standard deviations in the least
significant digits.
Example 3--Preparation of Crystalline Forms A Through F
Crystalline Form A through Form F are prepared as follows by using
Crystalline Form A obtained from Example 1 above. A variety of
crystallization techniques are used, including evaporation,
cooling, solvent/antisolvent precipitation, slurry, vapor stress,
and vapor diffusion, as described above. The results are presented
in Table 9 below:
TABLE-US-00024 TABLE 9 XRPD Solvent Method.sup.a Observations
Result -- 40.degree. C./75% off-white solids, A RH/7 d irregular,
B/E chloroform SE off-white solids, A needles, B/E chloroform/
VD/RT/7 d off-white solids, A heptane needles, B/E chloroform/
VD/RT/7 d off-white solids, A toluene irregular, B/E DCM SE
off-white solids, A + B needles, B/E VS/RT/7 d off-white solids, A
irregular, B/E slurry/RT/7 d off-white solids, B (for XRPD needles,
B/E see FIGS. 4B, 5, 6, and 7; for DSC and TGA see FIG. 8) SC
(40.degree. C. to RT, off-white solids, B refrigerator/2 d,
needles, B/E freezer/8 d) CC (40.degree. C. to dry milky solution B
ice/IPA) freezer/9 d off-white solids, needles, B/E DCM/ACN VD/RT/7
d off-white solids, A needles, B/E DCM/MEK VD/RT/7 d off-white
solids, A needles, B/E EtOH FE off-white solids, A + B irregular,
B/E VS/RT/7 d off-white solids, A irregular, B/E slurry/RT/7 d
off-white solids, A irregular, B/E SC (70.degree. C. to RT,
off-white solids, A + weak C refrigerator/2 d, irregular, B/E peaks
freezer/8 d) CC (70.degree. C. to dry milky solution C + weak A
ice/IPA) peaks freezer/2 d off-white solids, (~18.5, 20.7,
irregular, B/E 25.7 .degree.2.theta.) EtOH/acetone VD/RT/9 d no
solids -- acetone addition no solids EtOH/hexanes VD/RT/7 d
off-white solids, A irregular, B/E EtOH/THF VD/RT/9 d no solids --
HFIPA SE off-white solids, A + weak B irregular, B/E peaks
HFIPA/IPE AS precipitation off-white solids, A + weak irregular,
B/E peak (~18.9 .degree.2.theta.) HFIPA/THF AS precipitation
off-white solids, A irregular, B/E IPA FE off-white solids, A
irregular, B/E slurry/RT/7 d off-white solids, A irregular, B/E SC
(70.degree. C. to RT, off-white solids, C (for XRPD refrigerator/2
d, needles, B/E see FIGS. freezer/7 d) 4C, 9, and 13G; for DSC and
TGA see FIG. 12).sup.b CC (70.degree. C. to dry milky solution C +
possible ice/IPA) weak A peak freezer/2 d off-white solids, (~25.7
.degree.2.theta.) irregular, B/E (after 22 days of ambient storage:
C + possible weak A peaks (~12.3, 15.4, 16.6, 20.7, 25.7
.degree.2.theta., for XRPD see FIGS. 10 and 11).sup.c MeOH SE
off-white solids, A irregular, B/E MeOH:acetone FE off-white
solids, A (1:5) irregular, B/E MeOH/dioxane VD/RT/7 d off-white
solids, A needles, B/E MeOH/EtOAc VD/RT/7 d plates, single --
crystal MeOH/EtOAc VD/RT/7 d plates -- MeOH/IPE VD/RT/7 d very thin
plates, A possible single crystal MeOH:toluene FE off-white solids,
A (1:5) needles, B/E 1-propanol FE off-white solids, A irregular,
B/E slurry/RT/7 d off-white solids, A irregular, B/E 1-propanol SC
(70.degree. C. to RT, off-white solids, B refrigerator/2 d)
needles, B/E CC (70.degree. C. to dry milky solution ice/IPA)
freezer/2 d off-white solids, B + weak A needles, B/E and C peaks
(~17.8, 18.5, 20.7 .degree.2.theta.) TFE SE light-orange solids, A
+ weak B irregular, B/E peaks TFE/ACN AS precipitation off-white
solids, A needles, B/E TFE/EtOAc AS precipitation off-white solids,
A needles, B/E TFE/MEK AS precipitation off-white solids, A
needles, B/E water FE off-white solids, B irregular, B/E
slurry/RT/7 d off-white solids, B irregular, B/E dioxane:water FE
off-white solids, A (1:1) irregular, B/E .sup.aReported
temperatures, times, and RH value are approximate. .sup.bAbout 25
mg scale. Concentration of IPA solution: 10 mg/mL. .sup.cAbout 27
mg scale. Concentration of IPA solution: 10 mg/mL.
Crystalline Form B--
As summarized above, Crystalline Form B is obtained from
evaporation and slurry in water, slurry, slow and crash cooling in
DCM, as well as slow cooling in 1-propanol. In addition, materials
exhibiting XRPD patterns of Crystalline Form A with Crystalline
Form B peaks result from evaporation in DCM, ethanol, HFIPA, and
TFE. Material exhibiting XRPD pattern of Crystalline Form B with
weak Crystalline Form A and Crystalline Form C peaks is observed
from a crash cooling experiment in 1-propanol.
Crystalline Form B is indexed from a high-resolution XRPD pattern
using X'Pert High Score Plus (X'Pert High Score Plus 2.2a (2.2.1))
(FIG. 6, high-resolution XRPD pattern also shown in FIG. 7). The
pattern appears to represent a mixture of Crystalline Forms B and
A. Agreement between the allowed peak positions, marked with bars
for the current form and the observed peaks indicates a consistent
unit cell determination. Peaks at 18.5.degree., 20.7.degree.,
25.7.degree., and 27.5.degree. two-theta are not consistent with
the indexing solution of Crystalline Form B and are likely from
Crystalline Form A. Space groups consistent with the assigned
extinction symbol, unit cell parameters, and derived quantities are
tabulated below the figure. To confirm the tentative indexing
solution, the molecular packing motifs within the crystallographic
unit cell must be determined. No attempts at molecular packing are
performed. Crystalline Form B is indexed with a similar volume per
formula unit compared to Crystalline Form A, suggesting Crystalline
Form B is an unsolvated crystalline form.
XRPD Data acquisition parameters for FIGS. 4B and 5: INEL XRG-3000,
X-ray Tube: 1.54187100 .ANG., Voltage: 40 (kV), Amperage: 30 (mA),
Acquisition Time: 300 sec, Spinning capillary, Step size:
approximately 0.03.degree. 2.theta..
XRPD Data acquisition parameters for FIGS. 6 and 7: Panalytical
X-Pert Pro MPD PW3040 Pro, X-ray Tube: Cu (1.54059 .ANG.), Voltage:
45 kV, Amperage: 40 mA, Scan Range: 1.00-39.99.degree. 2.theta.,
Step Size: 0.017.degree. 2.theta., Collection Time: 1939 s, Scan
Speed: 1.2.degree./min., Slit: DS: 1/2.degree., SS: null,
Revolution Time: 1.0 s, Mode: Transmission.
Characterization data for Crystalline Form B are summarized in
Table 10 below:
TABLE-US-00025 TABLE 10 Analysis Result XRPD B (for XRPD see FIGS.
4B and 5) B + possible weak A peaks.sup.b (~18.5, 20.7, 25.7, 27.5
.degree.2.theta.) (for XRPD see FIGS. 6 and 7) DSC.sup.a
141.degree. C. (endo, peak; 137.degree. C. onset); 248.degree. C.
(endo, peak; 246.degree. C. onset); 251.degree. C. (endo, peak);
264.degree. C. (endo, peak) (for DSC see FIG. 8) TGA.sup.a 0.2%
weight loss up to 200.degree. C. 281.degree. C. (onset,
decomposition) (for TGA see FIG. 8) .sup.aTemperatures are rounded
to the nearest .degree. C.; weight loss values are rounded to one
decimal place. .sup.bHigh-resolution XRPD.
The thermal analysis results for Crystalline Form B are shown in
FIG. 8 (DSC, Size: 1.2600 mg, Method: (-30)-300-10, TOC; TGA, Size:
9.4320 mg, Method: 00-350-10). By TGA, Crystalline Form B exhibits
a small weight loss of approximately 0.2% from ambient to
200.degree. C., possibly due to trace amounts of solvent. The
dramatic change in the slope of the TGA thermogram at approximately
281.degree. C. is consistent with decomposition. By DSC, a broad
endotherm observed at approximately 141.degree. C. (peak) is
suspected to be attributed to either a solid form change or
possibly a loss of volatiles on heating. Crystalline Form B
displays an endotherm at approximately 248.degree. C. (peak),
similar to the thermal behavior observed for Crystalline Form A,
followed by two broad endotherms at approximately 251 and
264.degree. C. Based on the data obtained, Crystalline Form B is an
unsolvated, crystalline material.
Crystalline Form C--
Crystalline Form C may be made by slow cooling in isopropanol.
Material exhibiting XRPD pattern of Crystalline Form A with weak
Crystalline Form C peaks results from a slow cooling experiment in
ethanol; while the crash cooling experiments in ethanol and
isopropanol afford XRPD pattern Crystalline Form C with weak
Crystalline Form A peaks.
Six scale-up attempts are conducted to prepare Crystalline Form C
by cooling in isopropanol on approximately 50-150 mg scale (Table
11) and the solids tested by XRPD. At refrigerator temperature,
precipitated solids yield Form B. Seeding with Form C after cooling
in the refrigerator (no solids observed) and before placing in the
freezer yield XRPD pattern of Form C with B peaks. Precipitation at
freezer temperature results in solids with an XRPD pattern of Form
C with A peaks. A solution placed in the freezer after cooling to
room temperature with a lower concentration (7 mg/mL compared to 10
mg/mL) yields Form B. By crash cooling (ambient solution placed
into dry ice/isopropanol), solids generated are a mixture of Forms
B and A. The last attempt on an approximate 50-mg scale generates a
mixture of Forms A and C. The different outcomes of these
experiments suggest possible factors affecting the crystallization
of Form C on a larger scale (e.g., concentration, temperature,
cooling time, and seeding), and competitive crystallization of
Forms A and B that are possibly more stable under the experimental
conditions used. Note that Form C remains unchanged by XRPD after
22 days of ambient storage.
XRPD Data acquisition parameters for FIGS. 13A, C, and F:
Panalytical X-Pert Pro MPD PW3040 Pro, X-ray Tube: Cu (1.54059
.ANG.), Voltage: 45 kV, Amperage: 40 mA, Scan Range:
1.00-39.99.degree. 2.theta., Step Size: 0.017.degree. 2.theta.,
Collection Time: 717 s, Scan Speed: 3.3.degree./min., Slit: DS:
1/2.degree., SS: null, Revolution Time: 1.0 s, Mode:
Transmission.
XRPD Data acquisition parameters for FIG. 13B: Panalytical X-Pert
Pro MPD PW3040 Pro, X-ray Tube: Cu (1.54059 .ANG.), Voltage: 45 kV,
Amperage: 40 mA, Scan Range: 1.00-39.99.degree. 2.theta., Step
Size: 0.017.degree. 2.theta., Collection Time: 720 s, Scan Speed:
3.2.degree./min., Slit: DS: 1/2.degree., SS: null, Revolution Time:
1.0 s, Mode: Transmission.
XRPD Data acquisition parameters for FIG. 13D: Panalytical X-Pert
Pro MPD PW3040 Pro, X-ray Tube: Cu (1.54059 .ANG.), Voltage: 45 kV,
Amperage: 40 mA, Scan Range: 1.00-39.99.degree. 2.theta., Step
Size: 0.017.degree. 2.theta., Collection Time: 718 s, Scan Speed:
3.3.degree./min., Slit: DS: 1/2.degree., SS: null, Revolution Time:
1.0 s, Mode: Transmission.
XRPD Data acquisition parameters for FIG. 13E: Panalytical X-Pert
Pro MPD PW3040 Pro, X-ray Tube: Cu (1.54060 .ANG.), Voltage: 45 kV,
Amperage: 40 mA, Scan Range: 1.00-39.99.degree. 2.theta., Step
Size: 0.017.degree. 2.theta., Collection Time: 720 s, Scan Speed:
3.2.degree./min., Slit: DS: 1/2.degree., SS: null, Revolution Time:
1.0 s, Mode: Transmission.
TABLE-US-00026 TABLE 11 Attempted XRPD material Solvent
Method.sup.a Observations Result C IPA SC (70.degree. C. to RT,
off-white solids, B (for refrigerator/2 d) needles, B/E.sup.b XRPD
see FIG. 13A) SC (70.degree. C. to RT, off-white solids, C + B (for
refrigerator/4 h, irregular & XRPD see freezer/3 d) needles,
B/E.sup.c,d FIG. 13B) SC (70.degree. C. to RT, off-white solids, C
+ A (for refrigerator/4 h, irregular & XRPD see freezer/2 d)
needles, B/E.sup.c FIG. 13C) SC (70.degree. C. to RT, off-white
solids, B (for freezer/7 d) irregular, B/E.sup.e XRPD see FIG. 13D)
CC (70.degree. C. to off-white solids, B + A (for dry ice/IPA/4 h)
irregular, B/E.sup.c XRPD see FIG. 13E) SC (70.degree. C. to RT,
off-white solids, A + C (for refrigerator/4 h, irregular, B/E.sup.c
XRPD see freezer/3 d) FIG. 13F) .sup.aReported temperatures and
times are approximate. .sup.bConcentration of IPA solution: 11
mg/mL. .sup.cConcentration of IPA solution: 10 mg/mL. .sup.dSeeded
with Crystalline Form C (for XRPD of seeds see FIGS. 4C and 9)
before moving into the freezer. .sup.eConcentration of IPA
solution: 7 mg/mL.
Form C is indexed from a high-resolution XRPD pattern (FIG. 10)
using proprietary software. The pattern appears to represent a
mixture of Forms C and A. Agreement between the allowed peak
positions, marked with bars for the current form and the observed
peaks indicates a consistent unit cell determination. Peaks at
12.3.degree., 15.4.degree., 16.6.degree., 20.7.degree., and
25.7.degree. two-theta are not consistent with the indexing
solution of Form C and are likely from Form A. Space groups
consistent with the assigned extinction symbol, unit cell
parameters, and derived quantities are tabulated below the figure.
To confirm the tentative indexing solution, the molecular packing
motifs within the crystallographic unit cell must be determined. No
attempts at molecular packing are performed. Form C is indexed with
a similar volume per formula unit compared to Form A, suggesting
Form C is an unsolvated crystalline form.
XRPD Data acquisition parameters for FIGS. 4C, 9, and 13G: INEL
XRG-3000, X-ray Tube: 1.54187100 .ANG., Voltage: 40 (kV), Amperage:
30 (mA), Acquisition Time: 300 sec, Spinning capillary, Step size:
approximately 0.03.degree. 2.theta..
XRPD Data acquisition parameters for FIGS. 10 and 11: Panalytical
X-Pert Pro MPD PW3040 Pro, X-ray Tube: Cu (1.54059 .ANG.), Voltage:
45 kV, Amperage: 40 mA, Scan Range: 1.00-39.99.degree. 2.theta.,
Step Size: 0.017.degree. 2.theta., Collection Time: 720 s, Scan
Speed: 3.2.degree./min., Slit: DS: 1/2.degree., SS: null,
Revolution Time: 1.0 s, Mode: Transmission.
Characterization data for Form C are summarized in Table 12
below:
TABLE-US-00027 TABLE 12 Analysis Result XRPD C (for XRPD see FIGS.
4C, 9, and 13G) DSC.sup.a 122.degree. C. (endo, peak; 112.degree.
C. onset); 248.degree. C. (endo, peak; 246.degree. C. onset;
.DELTA.H: 88 J/g); 271.degree. C. (endo, peak) (for DSC see FIG.
12) TGA.sup.a 1.3% weight loss up to 200.degree. C. 266.degree. C.
(onset, decomposition) (for TGA see FIG. 12) XRPD C + possible weak
A peak (~25.7 .degree.2.theta.) C + possible weak A peaks.sup.b
(for XRPD see FIGS. 10 and 11) (~12.3, 15.4, 16.6, 20.7, 25.7
.degree.2.theta.) .sup.aTemperatures are rounded to the nearest
.degree. C.; weight loss values are rounded to one decimal place;
reported .DELTA.H values are rounded to the nearest whole number.
.sup.bHigh-resolution XRPD, reanalyzed after 22 days of ambient
storage.
The thermal analysis results for Form C are shown in FIG. 12 (DSC,
Size: 1.0100 mg, Method: (-30)-300-10, TOC; TGA, Size: 2.2300 mg,
Method: 00-350-10). By TGA, Form C exhibits a weight loss of
approximately 1.3% from ambient to 200.degree. C., possibly due to
loss of volatiles upon heating. The dramatic change in the slope of
the TGA thermogram at approximately 266.degree. C. is consistent
with decomposition. By DSC, a broad small endotherm observed at
approximately 122.degree. C. (peak) is suspected to be attributed
to either a solid form change or possibly a loss of volatiles on
heating. Form C displays an endotherm at approximately 248.degree.
C. (peak), similar to the thermal behavior observed for Form A,
followed by a broad endotherm at approximately 271.degree. C.
Based on the data obtained, Form C is an unsolvated, crystalline
material.
Crystalline Forms D, E, and F--
Crystalline Form A is dissolved in pH adjusted buffered media.
Undissolved solid or precipitate observed is analyzed by XRPD. Some
experiments are conducted at elevated temperature to increase
solubility, the undissolved solids are also analyzed by XRPD. The
resulting Crystalline Forms D, E, and F are generated during these
experiments as summarized in Table 13 below.
XRPD Data acquisition parameters for FIGS. 14D-F: INEL XRG-3000,
X-ray Tube: 1.54187100 .ANG., Voltage: 40 (kV), Amperage: 30 (mA),
Acquisition Time: 300 sec, Spinning capillary, Step size:
approximately 0.03.degree. 2.theta..
TABLE-US-00028 TABLE 13 XRPD pH Buffer Method.sup.a Observations
Result pH 2.0 slurry/RT/7 d off-white solids, A (50 mM irregular,
B/E KCl/HCl) SC (70.degree. C. to RT) off-white solids, A
irregular, B/E pH 4.4 spontaneous off-white solids, D (50 mM citric
precipitation irregular, B/E acid/sodium slurry/RT/7 d off-white
solids, B + weak citrate) irregular, B/E D peaks stir at 70.degree.
C./ off-white solids, D (for 30 min irregular, B/E XRPD see FIG.
14D) pH 6.0 slurry/50.degree. C./3 d off-white solids, E (contains
(50 mM irregular, B/E peaks of Na.sub.2HPO.sub.4/ F) (for
NaH.sub.2PO.sub.4) XRPD see FIG. 14E) pH 8.1 stir at 70.degree.
C./30 min off-white solids, F (for (50 mM irregular, B/E XRPD see
Na.sub.2HPO.sub.4/ FIG. 14F) NaH.sub.2PO.sub.4) .sup.aReported
times and temperatures are approximate.
pH 2.0 buffer (50 mM KCl/HCl): Crystalline Form A is recovered from
slow cooling (approximately 70.degree. C. to ambient) and slurry at
room temperature. pH 4.4 buffer (50 mM citric acid/sodium citrate):
Crystalline Form D results from spontaneous precipitation at room
temperature and after stirring a suspension at approximately
70.degree. C.; a room temperature slurry yields Crystalline Form B
with weak Crystalline Form D peaks by XRPD. pH 6.0 buffer (50 mM
Na.sub.2HPO.sub.4/NaH.sub.2PO.sub.4): Crystalline Form E with peaks
also found in Crystalline Form F by XRPD is observed from slurry at
approximately 50.degree. C. pH 8.1 buffer (50 mM
Na.sub.2HPO.sub.4/NaH.sub.2PO.sub.4): Crystalline Form F results
from stirring a suspension at approximately 70.degree. C.
Crystalline Forms D, E, and F are characterized by XRPD as shown in
FIG. 14.
Example 4--Amorphous
Attempts to prepare amorphous
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
are performed by milling, lyophilization, and rotary evaporation
(Table 14). Possible disordered Crystalline Form A materials are
recovered from all attempts used in this study.
XRPD Data acquisition parameters for FIGS. 52-55: Bruker Discovery
D8, X-ray Tube: Cu (1.54059 .ANG.), Scan Range: 2.14-37.02.degree.
2.theta., Step Size: 0.04.degree. 2.theta., Acquisition Time: 900
s.
TABLE-US-00029 TABLE 14 Conditions.sup.a Observations Analysis
Results freeze-drying off-white solids, XRPD disordered in
dioxane:water aggregates, no B A (for (1:1)/3 d XRPD see FIG. 51)
freeze-drying off-white solids, XRPD disordered in water/3 d
aggregates, no B A (for XRPD see FIG. 52) milling/30 Hz, off-white
solids, XRPD disordered 4 .times. 10 min aggregates, no B A (for
XRPD see FIG. 53) rotary off-white solids, XRPD disordered
evaporation aggregates, no B A (for in HFIPA XRPD see FIG. 54)
.sup.aReported times are approximate.
Example 5--Preparation of Crystalline Form A
##STR00003##
Commercially available reagents are used as received unless
otherwise noted. Reactions requiring an inert atmosphere are run
under nitrogen unless otherwise noted.
Step 1 and 2:
TABLE-US-00030 MW d Compound (g/mol) (g/mL) Equivalents Amt/mol
Reaction 2-naphthylacetonitrile 167.21 NA 1.0 mol eq (SM) 4500
g/26.91 mol (S)-(+)-epichlorohydrin 92.52 3.12 1.30 mol eq 3200
g/34.58 mol tetrahydrofuran 72.11 0.889 6.0 ml/g SM 32 L 2M sodium
bis(trimethylsilyl)amide 2.0M 0.916 2 mol eq 24700 g/5308 mol.sup.
in THF borane-dimethylsulfide 10.0M 0.80 2.5 mol eq 6500 g/67 mol
Isolation 2M HCl (aqueous) 2M NA 11.5 ml/g SM 57000 mL isopropyl
acetate 102.13 0.872 4 mL/g SM as required water 18.02 1.00 5 mL/g
SM as required ammonia (aqueous) NA 0.889 1.5 mL/g SM 6300 mL 5%
aqueous dibasic sodium NA NA 4 mL/g SM 18000 mL phosphate
para-toluenesulfonic acid 190.22 NA 0.93 mol eq. 49000 g/8.34 mol
monohydrate
2-naphthylacetonitrile (4500 g) is dissolved in THF (32 L), 3.2 kg
of (S)-(+)-epichlorohydrin are added and the solution cooled to
-16.degree. C. A 2.0 M solution of sodium hexamethyldisilylazane in
tetrahydrofuran (THF) (24.7 kg) is then added, keeping the internal
temperature below -10.degree. C. This addition requires 2 hr 45
minutes to complete. The reaction mixture is then stirred an
additional six hours at approximately -15.degree. C. after which a
sample is analyzed by HPLC. While keeping the internal temperature
less than 0.degree. C., borane-dimethylsulfide (6.5 kg) is added
over 36 minutes. After completion of the borane addition, the
reaction mixture is slowly heated to 60.degree. C. to reduce the
nitrile to the amine. During this heat-up, an exotherm is noted
which initiates at 45.degree. C. After heating at 60.degree. C. for
two hours a sample of the reaction mixture is analyzed by HPLC. The
reaction mixture is cooled to 24.degree. C. and transferred to a
solution of 2M HCl over 1 hr. The two-phase mixture is heated to
50.degree. C. and stirred for 1 hour at this temperature followed
by cooling to 29.degree. C. The pH of the quenched reaction mixture
is measured and found to be 5. Additional 2M HCl is added, the
mixture heated to 50.degree. C. and stirred for one hour, then
cooled to 25.degree. C. The pH is measured and found to be 1.
Reaction workup continues by the addition of isopropyl acetate
(IPAc), stirring, layer separation, and discard of the organic
layer. Aqueous ammonia is added to the aqueous layer and the pH
measured, which shows a pH of 8. Additional ammonia is added and
the pH re-measured and found to be 8.5. Workup then continues by
extraction with two extraction of the aqueous layer with IPAc. The
combined organic extracts are then washed with 5% dibasic sodium
phosphate in water followed by a brine wash. The resulting organic
layer is partially concentrated to azeotropically dry followed by
dilution with IPAc. p-Toluenesulfonic acid hydrate (4.9 kg) is then
added in portions to precipitate the desired product as its pTsOH
salt, which is isolated by filtration. The filtercake is washed
with IPAc and then dried to a constant weight to give 5785 g of the
desired product as a white solid. Yield: 54%. HPLC: 98.2%.
Step 3 and 4:
TABLE-US-00031 MW d Compound (g/mol) (g/mL) Equivalents Amt/mol
Reaction 2-naphthylcyclopropylamine-tosylate 399.51 NA 1.0 mol eq
5785 g/145.18 mol salt isopropylacetate 102.13 0.872 as required
176 L thionyl chloride 118.97 1.638 1.2 eq 2.1 Kg/17.65 mol 5M NaOH
5.0M NA 6.0 mol eq. 16.7 Kg Isolation magnesium sulfate NA NA 0.5
g/g 2.9 Kg hydrogen chloride in isopropyl alcohol 5.7M NA 1.0 mol
eq. 0.90 L isopropyl alcohol 60.1 0.786 1.5 mL/g as required Ethyl
alcohol 200 (special industrial 80.25 0.786 1.5 mL/g as required
denatured)
Step 3:
The amine-pTsOH salt (5785 g) obtained from step 2 is suspended in
IPAc (176 L) to give a slurry. Thionyl chloride (2.1 kg) is then
added over one hour. Upon completion of the thionyl chloride
addition the reaction mixture is stirred one additional hour and a
sample is analysed by HPLC. Aqueous sodium hydroxide (5M, 6 mol
equivalents) is added over one hour followed by four hours of
additional stirring. The layers are allowed to settle and the pH of
the aqueous layer is found to be 9. The layers are separated and
the organic layer washed with 1M NaOH in water. The aqueous layers
are combined and back extracted with IPAc and the initial organic
layer and the back extract combined. These combined organic layers
are washed with 0.5M HCl to extract
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane into the
aqueous layer. The acidic aqueous layer is washed with a 1:1
mixture of IPAc and THF to remove color. The aqueous layer is
basified with aqueous ammonia followed by extraction with IPAc.
After layer separation the organic layer is washed with brine,
dried over magnesium sulfate, and partially concentrated. After the
concentration, hydrogen chloride in isopropyl alcohol (IPA) (1.0
mol equivalent of HCl, 0.90 L) is added to form the crude salt,
which is isolated by filtration, washed with IPAc and then
partially dried. The wet cake is refluxed in IPAc. The crude salt
is refluxed in IPA and the solids isolated by filtration, washed
with IPA, and then dried. >99.5 HPLC area percent and 97.7%
chiral area percent purity. 1759 g of the desired product.
Step 4:
The crude (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride (1753 g) obtained from step 3 is dissolved in 20
volumes of hot ethanol (70.degree. C.) and then filtered via an
inline filter as a polish filtration. The dissolution vessel and
the inline filter and transfer line are then rinsed with additional
hot ethanol (61.degree. C.) and the rinse combined with the
filtrate. The combined filtrate and washes are partially
concentrated in vacuo to approximately 11.5 total volumes (relative
to crude (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride input) and then reheated to redissolve the solids.
The solution is cooled to 65.degree. C. and seed crystals added as
slurry in ethanol. After stirring at approx. 65.degree. C. to
develop the seed bed, the slurry is cooled to room temperature. The
resulting solids are isolated by filtration, the filtercake is
washed with ethanol, and the washed solids dried. A total of 1064 g
of tan product is obtained. >99.5% for both chiral and achiral
HPLC.
Step 5:
The (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride (1064 g) obtained from step 4 is dissolved in 10.7 L
of water while warming to 35.degree. C. Once all solids dissolve,
the aqueous solution is washed with 1:1 THF:IPAc to remove most of
the color. After the wash, aqueous ammonia is added to the aqueous
layer and (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane is
extracted into IPAc. The organic layer is dried over magnesium
sulfate and then concentrated in vacuo to give an off-white solid.
The solid is dissolved in IPA and transferred to a 22 L 3-neck
round bottom flask via inline filtration. Filtered hydrogen
chloride in IPA is then added to reform the salt, which is isolated
via filtration. The filtercake is washed with IPA and then dried to
give 926 g of (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride as a slightly off-white solid.
An XRPD of the product is shown in FIG. 35 and is consistent with
Crystalline Form A. The XRPD pattern is collected with a
PANalytical X'Pert PRO MPD diffractometer using an incident beam of
Cu radiation produced using an Optix long, fine-focus source. An
elliptically graded multilayer mirror is used to focus Cu K.alpha.
X-rays through the specimen and onto the detector. Prior to the
analysis, a silicon specimen (NIST SRM 640d) is analyzed to verify
the observed position of the Si 111 peak is consistent with the
NIST-certified position. A specimen of the sample is sandwiched
between 3-.mu.m-thick films and analyzed in transmission geometry.
A beam-stop, short anti-scatter extension, and an anti-scatter
knife edge are used to minimize the background generated by air.
Soller slits for the incident and diffracted beams are used to
minimize broadening from axial divergence. The diffraction pattern
is collected using a scanning position-sensitive detector
(X'Celerator) located 240 mm from the specimen and Data Collector
software v. 2.2b. Data acquisition parameters are: Panalytical
X-Pert Pro MPD PW3040 Pro, X-ray Tube: Cu (1.54059 .ANG.), Voltage:
45 kV, Amperage: 40 mA, Scan Range: 1.00-39.99.degree. 2.theta.,
Step Size: 0.017.degree. 2.theta., Collection Time: 717 s, Scan
Speed: 3.3.degree./min., Slit: DS: 1/2.degree., SS: null,
Revolution Time: 1.0 s, Mode: Transmission.
FIG. 36 overlays the XRPD patterns from FIG. 1 and FIG. 35. There
are some differences in relative peak intensities that are likely
due to preferred orientation (PO). PO is the tendency for crystals,
usually plates or needles, to pack against each other with some
degree of order. PO can affect peak intensities, but not peak
positions, in XRPD patterns.
An XRPD of the product after long-term storage is shown in FIG. 37
and is consistent with Crystalline Form A. The XRPD pattern is
collected with a PANalytical X'Pert PRO MPD diffractometer using an
incident beam of Cu radiation produced using an Optix long,
fine-focus source. An elliptically graded multilayer mirror is used
to focus Cu K.alpha. X-rays through the specimen and onto the
detector. Prior to the analysis, a silicon specimen (NIST SRM 640e)
is analyzed to verify the observed position of the Si 111 peak is
consistent with the NIST-certified position. A specimen of the
sample is sandwiched between 3-.mu.m-thick films and analyzed in
transmission geometry. A beam-stop, short antiscatter extension,
and antiscatter knife edge are used to minimize the background
generated by air. Soller slits for the incident and diffracted
beams are used to minimize broadening from axial divergence. The
diffraction pattern is collected using a scanning
position-sensitive detector (X'Celerator) located 240 mm from the
specimen and Data Collector software v. 2.2b. Data acquisition
parameters are: Panalytical X-Pert Pro MPD PW3040 Pro, X-ray Tube:
Cu (1.54059 .ANG.), Voltage: 45 kV, Amperage: 40 mA, Scan Range:
1.00-39.99.degree. 2.theta., Step Size: 0.017.degree. 2.theta.,
Collection Time: 719 s, Scan Speed: 3.3.degree./min., Slit: DS:
1/2.degree., SS: null, Revolution Time: 1.0 s, Mode:
Transmission.
One PANalytical pattern is analyzed for Crystalline Form A, and
preferred orientation and particle statistic effects are assessed
through comparison with additional XRPD patterns analyzed using
alternate geometry in addition to a calculated XRPD pattern from
single crystal analysis. An indexing result for the XRPD shown in
FIG. 37 collected with Cu K.alpha. radiation is shown in FIG. 38.
The XRPD pattern is indexed using X'Pert High Score Plus 2.2a
(2.2.1). Observed peaks are shown in FIG. 39 and listed in Table C
in formula 1.32 above, representative peaks are listed in Table B
in formula 1.25 above, and characteristic peaks are listed in Table
A in formula 1.16 above.
Example 6--Preparation of Crystals of Form B
Example 6a
558.9 mg of Crystalline Form A from Example 5 above is slurried in
5 mL dichloromethane. The preparation is stirred (300 RPM) in a
sealed vial at ambient temperature for 16 days. White solids are
isolated by vacuum filtration, rinsed with 1 mL of dichloromethane,
and briefly dried under nitrogen. Product is Crystalline Form A. An
XRPD pattern of the product is in FIG. 47. The XRPD pattern is
collected with a PANalytical X'Pert PRO MPD diffractometer using an
incident beam of Cu radiation produced using an Optix long,
fine-focus source. An elliptically graded multilayer mirror is used
to focus Cu K.alpha. X-rays through the specimen and onto the
detector. Prior to the analysis, a silicon specimen (NIST SRM 640e)
is analyzed to verify the observed position of the Si 111 peak is
consistent with the NIST-certified position. A specimen of the
sample is sandwiched between 3-.mu.m-thick films and analyzed in
transmission geometry. A beam-stop, short antiscatter extension,
and an antiscatter knife edge are used to minimize the background
generated by air. Soller slits for the incident and diffracted
beams are used to minimize broadening from axial divergence.
Diffraction patterns are collected using a scanning
position-sensitive detector (X'Celerator) located 240 mm from the
specimen and Data Collector software v. 2.2b. Data acquisition
parameters are: Panalytical X-Pert Pro MPD PW3040 Pro, X-ray Tube:
Cu (1.54059 .ANG.), Voltage: 45 kV, Amperage: 40 mA, Scan Range:
1.00-39.99.degree. 2.theta., Step Size: 0.017.degree. 2.theta.,
Collection Time: 720 s, Scan Speed: 3.2.degree./min., Slit: DS:
1/2.degree., SS: null, Revolution Time: 1.0 s, Mode:
Transmission.
Example 6b
34.3 mg of Crystalline Form A from Example 6a is contacted with 1
mL of water. The sample is sonicated until solids dissolve. The
sample is capped and left at ambient temperature until nucleation
is observed, within one day. Singles are isolated from the bulk
sample for analysis.
Data Collection: A colorless plate of C.sub.15H.sub.16ClN
[C.sub.15H.sub.16N, Cl], having approximate dimensions of
0.31.times.0.21.times.0.09 mm, is mounted on a nylon loop in random
orientation. Preliminary examination and data collection are
performed with Cu K.alpha. radiation (.lamda.=1.54178 .ANG.) on a
Rigaku Rapid II diffractometer equipped with confocal optics.
Refinements are performed using SHELX2014 (Sheldrick, G. M. Acta
Cryst. 2015, C71, 3-8). Cell constants and an orientation matrix
for data collection are obtained from least-squares refinement
using the setting angles of 22958 reflections in the range
2.degree.<.theta.<26.degree.. From the systematic presence of
the following conditions: h00 h=2n; 0k0 k=2n; 00l l=2n, and from
subsequent least-squares refinement, the space group is determined
to be P2.sub.12.sub.12.sub.1 (no. 19). The data are collected to a
maximum diffraction angle (2.theta.) of 144.79.degree., at a
temperature of 100 K.
Data Reduction: Frames are integrated with HKL3000 (Otwinowski, Z.;
Minor, W. Methods Enzymol. 1997, 276, 307). A total of 22958
reflections are collected, of which 2415 are unique. Lorentz and
polarization corrections are applied to the data. The linear
absorption coefficient is 2.422 mm.sup.-1 for Cu K.alpha.
radiation. An empirical absorption correction using SCALEPACK
(Otwinowski, Z.; Minor, W. Methods Enzymol. 1997, 276, 307) is
applied. Transmission coefficients range from 0.753 to 0.976. A
secondary extinction correction is applied (Sheldrick, G. M. Acta
Cryst. 2015, C71, 3-8). The final coefficient, refined in
least-squares, is 0.0055(8) (in absolute units). Intensities of
equivalent reflections are averaged. The agreement factor for the
averaging is 4.95% based on intensity.
Structure Solution and Refinement: The structure is solved by
direct methods using SHELXS-97 (Sheldrick, G. M. Acta Cryst. 2015,
C71, 3-8). The remaining atoms are located in succeeding difference
Fourier syntheses. Hydrogen atoms are included in the refinement
but restrained to ride on the atom to which they are bonded. The
structure is refined in full-matrix least-squares by minimizing the
function: .SIGMA.w(|F.sub.o|.sup.2-|F.sub.c|.sup.2).sup.2 The
weight w is defined as
1/[.sigma..sup.2(F.sub.o.sup.2)+(0.0437P).sup.2+(2.1802P)], where
P=(F.sub.o.sup.2+2F.sub.c.sup.2)/3. Scattering factors are taken
from the "International Tables for Crystallography" (International
Tables for Crystallography, Vol. C, Kluwer Academic Publishers:
Dordrecht, the Netherlands, 1992, Tables 4.2.6.8 and 6.1.1.4). Of
the 2415 reflections used in the refinements, only the reflections
with F.sub.o.sup.2>2.sigma.(F.sub.o.sup.2) are used in
calculating the fit residual, R. A total of 2372 reflections are
used in the calculation. The final cycle of refinement includes 155
variable parameters and converges with unweighted and weighted
agreement factors of:
R=.SIGMA.|F.sub.o-F.sub.c|/.SIGMA.F.sub.o=0.0453 R.sub.w= {square
root over
((.SIGMA.w(F.sub.o.sup.2-F.sub.c.sup.2).sup.2/.SIGMA.w(F.sub.o.sup.2-
).sup.2))}=0.1224 The standard deviation of an observation of unit
weight (goodness of fit) is 1.150. The highest peak in the final
difference Fourier has a height of 0.318 e/.ANG..sup.3. The minimum
negative peak has a height of -0.313 e/.ANG..sup.3.
Calculated X-ray Powder Diffraction (XRPD) Pattern: A calculated
XRPD pattern is generated for Cu radiation using Mercury (Macrae,
C. F.; Edgington, P. R.; McCabe, P.; Pidcock, E.; Shields, G. P.;
Taylor, R.; Towler, M.; and van de Streek, J., J. Appl. Cryst.,
2006, 39, 453-457) and the atomic coordinates, space group, and
unit cell parameters from the single crystal structure. Because the
single crystal data are collected at low temperatures (100 K), peak
shifts may be evident between the pattern calculated from low
temperature data and the room temperature experimental powder
diffraction pattern, particularly at high diffraction angles. The
calculated XRPD pattern is adjusted to room temperature using the
previously obtained unit cell parameters from XRPD indexing.
Atomic Displacement Ellipsoid and Packing Diagrams: The atomic
displacement ellipsoid diagram is prepared using Mercury (Macrae,
C. F.; Edgington, P. R.; McCabe, P.; Pidcock, E.; Shields, G. P.;
Taylor, R.; Towler, M.; and van de Streek, J., J. Appl. Cryst.,
2006, 39, 453-457). Atoms are represented by 50% probability
anisotropic thermal ellipsoids. Packing diagrams and additional
figures are prepared using Mercury. Hydrogen bonding is represented
as dashed lines. Assessment of chiral centers is performed with
PLATON (Spek, A. L. PLATON. Molecular Graphics Program. Utrecht
University, Utrecht, The Netherlands, 2008. Spek, A. L., J. Appl.
Cryst. 2003, 36, 7). Absolute configuration is evaluated using the
specification of molecular chirality rules (Cahn, R. S.; Ingold, C;
Prelog, V. Angew. Chem. Intern. Ed. Eng., 1966, 5, 385 and Prelog,
V., Helmchen, G. Angew. Chem. Intern. Ed. Eng., 1982, 21, 567).
Results: The orthorhombic cell parameters and calculated volume
are: a=5.9055(2) .ANG., b=7.4645(3) .ANG., c=29.1139(13) .ANG.
(.alpha.=.beta.=.gamma.=90.degree.), V=1283.39(9) .ANG..sup.3. The
formula weight of the asymmetric unit in Crystalline Form B is
245.74 g mol.sup.-1 with Z=4, resulting in a calculated density of
1.272 g cm.sup.-3. The space group is determined to be
P2.sub.12.sub.12.sub.1 (no. 19). A summary of the crystal data and
crystallographic data collection parameters are provided in Table
15 below. The space group and unit cell parameters are consistent
with those obtained for Form B by XRPD indexing.
The R value is 0.0453 (4.53%).
An atomic displacement ellipsoid drawing of Crystalline Form B is
shown in FIG. 24.
The asymmetric unit shown in FIG. 24 contains one protonated
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane molecule and
one chloride counter ion.
Packing diagrams viewed along the a, b, and c crystallographic axes
are shown in FIGS. 25-27, respectively. Hydrogen bonding occurs
from the amine to the chloride, forming one-dimensional hydrogen
bonded helical chains along the a axis, shown in FIG. 28.
The molecular conformation of the
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane molecules in
the structure of Crystalline Form B is compared with the molecular
conformation observed in the structure of Crystalline Form A in
FIG. 29, and the packing of the two forms viewed along the a axis
is compared in FIG. 30. The hydrogen bonding in the structures of
Crystalline Forms A and B is shown in FIG. 31. Adjacent molecules
are linked through chloride ions in the Crystalline Form A hydrogen
bonding forming straight chains down the a axis. The amine groups
of adjacent molecules are too far apart in the Crystalline Form B
packing to be linked in a similar manner, and instead the hydrogen
bonding in Crystalline Form B forms a helical chain.
The absolute structure can be determined through an analysis of
anomalous X-ray scattering by the crystal. A refined parameter x,
known as the Flack parameter (Flack, H. D.; Bernardinelli, G., Acta
Cryst. 1999, A55, 908; Flack, H. D., Bernardinelli, G., J. Appl.
Cryst. 2000, 33, 1143, Flack, H. D., Acta Cryst. 1983, A39, 876;
Parsons, S.; Flack, H. D.; Wagner, T., Acta Cryst. 2013, B69,
249-259), encodes the relative abundance of the two components in
an inversion twin. The structure contains a fraction 1-x of the
model being refined, and x of its inverse. Provided that a low
standard uncertainty is obtained, the Flack parameter should be
close to 0 if the solved structure is correct, and close to 1 if
the inverse model is correct. The measured Flack parameter for the
structure of Crystalline Form B shown in FIG. 24 is 0.010 with a
standard uncertainty of 0.010, which indicates strong
inversion-distinguishing power. The compound is enantiopure and the
absolute configuration can be assigned directly from the crystal
structure.
Refinement of the Flack parameter (x) does not result in a
quantitative statement about the absolute structure assignment.
However, an approach applying Bayesian statistics to Bijvoet
differences can provide a series of probabilities for different
hypotheses of the absolute structure (Hooft, R. W. W.; Strayer, L.
H.; and Spek, A. L., J. Appl. Cryst., 2008, 41, 96-103 and Bijvoet,
J. M.; Peerdeman, A. F.; van Bommel, A. J., Nature, 1951, 168,
271). This analysis provides a Flack equivalent (Hooft) parameter
in addition to probabilities that the absolute structure is either
correct, incorrect or a racemic twin. For the current data set the
Flack equivalent (Hooft) parameter is determined to be -0.001(7),
the probability that the structure is correct is 1.000, the
probability that the structure is incorrect is 0.000 and the
probability that the material is a racemic twin is 0.000.
This structure contains two chiral centers located at C2 and C3
(refer to FIG. 24), which bond in the S and R configuration,
respectively.
FIG. 32 shows a calculated XRPD pattern of Crystalline Form B,
generated from the single crystal structure.
An experimental XRPD pattern of Crystalline Form B is shown in FIG.
33 (same as XRPD pattern in FIG. 40, Example 8), overlaid with the
calculated pattern and a calculated pattern that has been adjusted
to room temperature. All peaks in the experimental patterns are
represented in the calculated XRPD pattern, indicating a single
phase.
Differences in intensities between the calculated and experimental
powder diffraction patterns often are due to preferred orientation.
Preferred orientation is the tendency for crystals to align
themselves with some degree of order. This preferred orientation of
the sample can significantly affect peak intensities, but not peak
positions, in the experimental powder diffraction pattern.
Furthermore, some shift in peak position between the calculated and
experimental powder diffraction patterns may be expected because
the experimental powder pattern is collected at ambient temperature
and the single crystal data are collected at 100 K. Low
temperatures are used in single crystal analysis to improve the
quality of the structure but can contract the crystal resulting in
a change in the unit cell parameters, which is reflected in the
calculated powder diffraction pattern. These shifts are
particularly evident at high diffraction angles. The calculated
XRPD pattern has been adjusted to room temperature using the unit
cell obtained previously from XRPD indexing.
TABLE-US-00032 TABLE 15 Crystal Data and Data Collection Parameters
for (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride Form B (Crystalline Form B) Empirical formula
C.sub.15H.sub.16ClN Formula weight 245.74 Temperature 100(2) K
Wavelength 1.54178 .ANG. Crystal system Orthorhombic Space group
P2.sub.12.sub.12.sub.1 Unit cell dimensions a = 5.9055(2) .ANG.
.alpha. = 90.degree.. b = 7.4645(3) .ANG. .beta. = 90.degree.. c =
29.1139(13) .ANG. .gamma. = 90.degree.. Volume 1283.39(9)
.ANG..sup.3 Z 4 Density (calculated) 1.272 Mg/m.sup.3 Absorption
coefficient 2.422 mm.sup.-1 F(000) 520 Crystal size 0.310 .times.
0.210 .times. 0.090 mm.sup.3 Theta range for data 6.080 to
72.393.degree.. collection Index ranges -7 <= h <= 7, -8
<= k <= 8, -35 <= l <= 35 Reflections collected 22958
Independent reflections 2415 [R(int) = 0.0495] Completeness to
theta = 98.5% 67.679.degree. Absorption correction Semi-empirical
from equivalents Max. and min. transmission 0.976 and 0.753
Refinement method Full-matrix least-squares on F.sup.2
Data/restraints/parameters 2415/0/155 Goodness-of-fit on F.sup.2
1.150 Final R indices [I > R1 = 0.0453, wR2 = 0.1224 2sigma(I)]
R indices (all data) R1 = 0.0464, wR2 = 0.1240 Absolute structure
Flack parameter: 0.010(10) parameter Hooft parameter: -0.001(7)
Extinction coefficient 0.0055(8) Largest diff. peak and hole 0.318
and -0.313 e..ANG..sup.-3
Example 7--Preparation of Crystalline Form B
470.9 mg of Crystalline Form A from Example 5 above is mixed with 5
mL of water in a 20 mL glass vial. The slurry is stirred at ambient
temperature for 16 days with a stir bar to allow conversion to
occur. The solids are collected by vacuum filtration and briefly
dried under nitrogen.
Example 8--Preparation of Crystalline Form B
1 g of the product from Example 16 below is stirred in 5 mL of
Special Industrial 200 (ethanol denatured) over weekend at ambient
temperature. The mixture is filtered and rinsed with 2 mL of
Special Industrial 200 (ethanol denatured) and followed by
isopropyl acetate (2.times.3 mL). Pull dry the solids over 2 hours
and then dry at 40.degree. C. over 6 hours to give 0.81 g of
product.
An XRPD shows the product is Crystalline Form B (FIG. 40 and also
shown as the top XRPD pattern in FIG. 33). The XRPD pattern is
collected with a PANalytical X'Pert PRO MPD diffractometer using an
incident beam of Cu radiation produced using an Optix long,
fine-focus source. An elliptically graded multilayer mirror is used
to focus Cu K.alpha. X-rays through the specimen and onto the
detector. Prior to the analysis, a silicon specimen (NIST SRM 640d)
is analyzed to verify the observed position of the Si 111 peak is
consistent with the NIST-certified position. A specimen of the
sample is sandwiched between 3-.mu.m-thick films and analyzed in
transmission geometry. A beam-stop, short anti-scatter extension,
and an anti-scatter knife edge are used to minimize the background
generated by air. Soller slits for the incident and diffracted
beams are used to minimize broadening from axial divergence. The
diffraction pattern is collected using a scanning
position-sensitive detector (X'Celerator) located 240 mm from the
specimen and Data Collector software v. 2.2b. Data acquisition
parameters are: Panalytical X-Pert Pro MPD PW3040 Pro, X-ray Tube:
Cu (1.54059 .ANG.), Voltage: 45 kV, Amperage: 40 mA, Scan Range:
1.01-39.98.degree. 2.theta., Step Size: 0.017.degree. 2.theta.,
Collection Time: 720 s, Scan Speed: 3.2.degree./min., Slit: DS:
1/2.degree., SS: null, Revolution Time: 1.0 s, Mode:
Transmission.
One PANalytical pattern is analyzed for this material, and
preferred orientation and particle statistic effects are assessed
through comparison with additional XRPD patterns analyzed using
alternate geometry in addition to a calculated XRPD pattern from
single crystal analysis. An indexing result for the XRPD shown in
FIG. 40 collected with Cu K.alpha. radiation is shown in FIG. 41.
The XRPD pattern is indexed using X'Pert High Score Plus 2.2a
(2.2.1). Observed peaks are shown in FIG. 42 and listed in Table F
in formula 1.109, representative peaks are listed in Table E in
formula 1.102, and characteristic peaks are listed in Table D in
formula 1.93.
Example 9--Crystalline Form C
A turbid solution containing 458.2 mg of Crystalline Form A from
Example 5 and 40 mL of IPA is generated at elevated temperature.
The hot solution is filtered with a 0.2-.mu.m nylon filter into a
clean vial and placed into a freezer. After two days, the solids
are recovered by vacuum filtration and briefly dried under
nitrogen. The solids are identified as a mixture of Crystalline
Forms A and C. A slurry is generated with 42.2 mg of the mixture
and 0.8 mL of a saturated DCM solution. (The saturated solution is
generated with 65.4 mg of Crystalline Form A from Example 5 in 5 mL
of DCM at ambient temperature. Excess solids are filtered from the
solution the following day with a 0.2-.mu.m nylon filter.) The
slurry is stirred, 100 RPM, with an agate ball at 2.degree. C. for
3 weeks to allow conversion to occur. Solids isolated from the
resulting suspension through vacuum filtration are stored at a
temperatures between -25 and -10.degree. C.
An XRPD of the product is shown in FIG. 43. The XRPD pattern is
collected with a PANalytical X'Pert PRO MPD diffractometer using an
incident beam of Cu radiation produced using an Optix long,
fine-focus source. An elliptically graded multilayer mirror is used
to focus Cu K.alpha. X-rays through the specimen and onto the
detector. Prior to the analysis, a silicon specimen (NIST SRM 640d)
is analyzed to verify the observed position of the Si 111 peak is
consistent with the NIST-certified position. A specimen of the
sample is sandwiched between 3-.mu.m-thick films and analyzed in
transmission geometry. A beam-stop, short anti-scatter extension,
and an anti-scatter knife edge are used to minimize the background
generated by air. Soller slits for the incident and diffracted
beams are used to minimize broadening from axial divergence. The
diffraction pattern is collected using a scanning
position-sensitive detector (X'Celerator) located 240 mm from the
specimen and Data Collector software v. 2.2b. Data acquisition
parameters are: Panalytical X-Pert Pro MPD PW3040 Pro, X-ray Tube:
Cu (1.54059 .ANG.), Voltage: 45 kV, Amperage: 40 mA, Scan Range:
1.00-39.99.degree. 2.theta., Step Size: 0.017.degree. 2.theta.,
Collection Time: 720 s, Scan Speed: 3.2.degree./min., Slit: DS:
1/2.degree., SS: null, Revolution Time: 1.0 s, Mode:
Transmission.
One PANalytical pattern is analyzed for this material, and
preferred orientation and particle statistic effects are assessed
through comparison with additional XRPD patterns analyzed using
alternate geometry. An indexing result for the XRPD pattern shown
in FIG. 43 collected with Cu K.alpha. radiation is shown in FIG.
44. The XRPD pattern is indexed using proprietary software (U.S.
Pat. No. 8,576,985). Observed peaks are shown in FIG. 45 and listed
in Table I in formula 1.183, representative peaks are listed in
Table H in formula 1.176, and characteristic peaks are listed in
Table G in formula 1.168.
Example 10--Interconversion Slurry Experiments
An Energy-Temperature Diagram is a semi-quantitative graphical
solution of the Gibbs-Helmholtz equation, where the enthalpy (H)
and free energy (G) isobars for each form are depicted as a
function of temperature. The graph assumes that the free energy
isobars intersect at most once and, second, that the enthalpy
isobars of the polymorphs do not intersect. The melting point of a
polymorph is defined as the temperature at which the free energy
isobar of the polymorph intersects the free energy isobar of the
liquid. The transition temperature is defined as the temperature at
which the free energy isobar of one polymorph intersects the free
energy isobar of the second. Thus, at T.sub.t both polymorphs have
equal free energy, and consequently are in equilibrium with each
other.
The proposed Energy-Temperature Diagram for Crystalline Forms A, B,
and C is shown in FIG. 46. In the diagram, the enthalpy (H) and
free energy (G) isobars for each form are depicted as a function of
temperature (T). Subscripts A, B, C, and L refer to Crystalline
Forms A, B, C, and liquid phase, respectively. Subscripts f, t, and
m refer to fusion, transition point, and melting point,
respectively. The graph assumes that the free energy isobars
intersect at most once and, second, that the enthalpy isobars of
the polymorphs do not intersect. The melting point of a polymorph
is defined as the temperature at which the free energy isobar of
the polymorph intersects the free energy isobar of the liquid. The
transition temperature is defined as the temperature at which the
free energy isobar of one polymorph intersects the free energy
isobar of the second. Thus, at T.sub.t both polymorphic forms have
equal free energy, and consequently are in equilibrium with each
other. Crystalline Form C is the stable solid phase below
T.sub.t,C.fwdarw.B (because the free energy of Crystalline Form C
is lower than that of Crystalline Form B), Crystalline Form B is
the stable solid phase between T.sub.t,C.fwdarw.B and
T.sub.t,B.fwdarw.A, and Crystalline Form A is the stable solid
phase above T.sub.t,B.fwdarw.A. The low energy polymorph will have
a lower fugacity, vapor pressure, thermodynamic activity,
solubility, dissolution rate per unit surface area, and rate of
reaction relative to the other polymorphs.
Interconversion experiments are performed to test the hypothetical
thermodynamic relationship between materials illustrated by the
Energy-Temperature Diagram above. Interconversion or competitive
slurry experiments are a solution-mediated process that provides a
pathway for the less soluble (more stable) crystal to grow at the
expense of the more soluble crystal form (Bernstein, J.
Polymorphism in Molecular Crystals. Clarendon Press, Oxford, 2006;
Brittain, H. G., Polymorphism in Pharmaceutical Solids. Marcel
Dekker, Inc., New York, 1999). Outside the formation of a solvate
or degradation, the resulting more stable polymorph from an
interconversion experiment is independent of the solvent used
because the more thermodynamically stable polymorph has a lower
energy and therefore lower solubility. The choice of solvent
affects the kinetics of polymorph conversion and not the
thermodynamic relationship between polymorphic forms (Gu, C. H.,
Young, V. Jr., Grant, D. J., J. Pharm. Sci. 2001, 90 (11),
1878-1890).
Binary interconversion slurry experiments between Crystalline Forms
A, B, and C in different solvent systems at temperatures spanning
approximately 2 through 67.degree. C. are summarized in Table 16
below. Saturated solutions are generated and then added to mixtures
composed of approximately equivalent quantities of two of the
polymorphs. The samples are slurried from overnight to three weeks
and the solids harvested and analyzed by XRPD. The results of the
interconversion studies indicate that the relative thermodynamic
stability of the enantiotropes Crystalline Forms A, B, and C are
correctly depicted by the proposed Energy-Temperature Diagram. In
addition, T.sub.t,C.fwdarw.B is expected below 2.degree. C. (is not
determined), T.sub.t,C.fwdarw.A will be between 2.degree. C. and
ambient temperature, and T.sub.t,B.fwdarw.A will be between 37 and
54.degree. C.
TABLE-US-00033 TABLE 16 Binary Interconversion Slurries between
Crystalline Forms A, B, and C Crystalline Forms Results Temp.sup.1
Duration.sup.1 Solvent (v/v) B + A B 2.degree. C. 3 weeks DCM B
2.degree. C. 3 weeks EtOH B + C B 2.degree. C. 3 weeks DCM B
2.degree. C. 3 weeks EtOH C + A C 2.degree. C. 3 weeks DCM .sup. C
+ A.dwnarw..sup.2 2.degree. C. 3 weeks EtOH B + A B ambient 2 weeks
DCM B ambient 2 weeks EtOH B ambient 2 weeks 10:1 ACN/H.sub.2O B +
C B ambient 2 weeks DCM B ambient 2 weeks EtOH B ambient 2 weeks
10:1 ACN/H.sub.2O A + C A ambient 2 weeks DCM A ambient 2 weeks
EtOH .sup. B.sup.3 ambient 2 weeks 10:1 ACN/H.sub.2O B + A B
37.degree. C. 4 days DCM A + B A 54.degree. C. 3 days EtOH A + B A
+ B.dwnarw..sup.2 67.degree. C. overnight EtOH A 67.degree. C. 4
days EtOH B + C A.sup.3 + B .sup. 67.degree. C. overnight EtOH A +
C A 67.degree. C. overnight EtOH .sup.1Duration and temperatures
are approximate. .sup.2Downward arrow indicates the peak
intensities of the associated crystalline phase have decreased
relative to those of the starting mixture. The length of time of
the experiment is not sufficient to reach equilibrium;
nevertheless, conclusions of the predominant form can be made based
on the resulting mixture. .sup.3The solution-mediated
interconversion process provides a pathway for the less soluble
(more stable relative to the other) crystal to grow at the expense
of the more soluble crystal form. However, when neither of the
forms involved in the binary competitive slurry is the most
thermodynamically stable form, the possibility of the most stable
crystal to grow at the expense of the other two more soluble
crystal forms can also result. This solvent-mediated polymorphic
transformation is controlled by its nucleation rate, which is
generally higher in a solvent giving higher solubility. In addition
to the solubility, the strength of the solvent-solute interactions
is also important. Degree of agitation and temperature also change
the polymorphic transformation rate by influencing the
crystallization kinetics of the more stable polymorph.
Crystalline Form B exhibits a lower apparent solubility than
Crystalline Form A in both methanol and water (Table 17 below).
Solution calorimetry (SolCal) analyses are also performed to
determine the heats of solution in methanol at 25.degree. C. and
confirm the stable form at this temperature (see Example 15). Based
on SolCal data, the dissolutions of both Crystalline Forms A and B
in methanol are endothermic events with average heats of solution
of 48.618 and 64.567 J/g, respectively, indicating that Crystalline
Form B is more stable than Crystalline A at 25.degree. C.
Experimental: Approximate Solubility
A weighed sample is treated with aliquots of the test solvent at
room temperature. The mixture is sonicated between additions to
facilitate dissolution. Complete dissolution of the test material
is determined by visual inspection. Solubility is estimated based
on the total solvent used to provide complete dissolution. The
actual solubility may be greater than the value calculated because
of the use of solvent aliquots that are too large or due to a slow
rate of dissolution.
TABLE-US-00034 TABLE 17 Approximate Solubility of Crystalline Forms
A and B Crystalline Form Solvent Solubility (mg/mL) A MeOH 74 B
MeOH 63 A H.sub.2O .sup. 34.sup.1 B H.sub.2O .sup. 21.sup.2
.sup.1Nucleation observed after one day. A single crystal of
Crystalline Form B is isolated. .sup.2Nucleation of irregular fines
with no birefringence observed after 7 days.
Example 11--Accelerated Stress Conditions
Crystalline Forms A, B, and C are exposed to accelerated stress
conditions for two weeks (Table 18 below). Based on XRPD,
Crystalline Forms A and B remain unchanged at 30.degree. C./56% RH
or 40.degree. C./75% RH within the time frame evaluated. However,
Crystalline Form C converts to a mixture of Crystalline Forms A and
B within two weeks at 40.degree. C./75% RH. Crystalline Form C is
metastable at this condition. For Crystalline Form A, in the
absence of seeds of the more stable polymorph, the critical free
energy barrier for the nucleation of Crystalline Form B is not
overcome in the solid state or in solvent mediated form conversion
experiments within the time frame evaluated.
TABLE-US-00035 TABLE 18 Accelerated Stability Evaluation of
Crystalline Form Results Crystalline (Crystalline Form Condition
Time Form) A source sample -- A subsample stored in freezer T zero
-- 30.degree. C./60% RH 2 weeks A 40.degree. C./75% RH 2 weeks A B
source sample -- B subsample stored in freezer T zero -- 30.degree.
C./60% RH 2 weeks B 40.degree. C./75% RH 2 weeks B C source sample
-- C subsample stored in freezer T zero -- 40.degree. C./75% RH 2
weeks A + B
T.sub.t,B.fwdarw.A is between 37 and 54.degree. C. A mixture of
Forms A and B (combination of portions 1 and 2 from Example 17),
completely converts to Form A upon exposure to 230.degree. C.
(Table 19 below).
Experimental: Relative Humidity Stress
The following relative humidity jars (saturated salt solutions are
used to generate desired relative humidity) are utilized: 75% RH
(NaCl) and 56% RH (NaBr) (Nyqvist, H., Int. J. Pharm. Tech. &
Prod. Mfr. 1983, 4 (2), 47-48).
TABLE-US-00036 TABLE 19 Physical Stability of Mixture of Forms A
and B Method.sup.1 Observation.sup.2 Results expose to 230.degree.
C., sublimation is observed; A moist pH paper held in no pH change
is noted, suggesting head space above sample no loss of HCl upon
heating; fines and large blades, B .sup.1Time and temperature are
approximate. .sup.2B = birefringent when observed by polarized
light microscopy .sup.3 Upward arrow indicates the peak intensities
of the associated crystalline phase have increased relative to
those of the starting mixture.
Example 12--Preparation of Crystalline Form B
A portion of Crystalline Form A from Example 5 above is slurried
with water at ambient temperature for 16 days. Crystalline Form B
is isolated. An XRPD of the product is in FIG. 48. The XRPD pattern
is collected with a PANalytical X'Pert PRO MPD diffractometer using
an incident beam of Cu radiation produced using an Optix long,
fine-focus source. An elliptically graded multilayer mirror is used
to focus Cu K.alpha. X-rays through the specimen and onto the
detector. Prior to the analysis, a silicon specimen (NIST SRM 640e)
is analyzed to verify the observed position of the Si 111 peak is
consistent with the NIST-certified position. A specimen of the
sample is sandwiched between 3-.mu.m-thick films and analyzed in
transmission geometry. A beam-stop, short antiscatter extension,
and an antiscatter knife edge are used to minimize the background
generated by air. Soller slits for the incident and diffracted
beams are used to minimize broadening from axial divergence.
Diffraction patterns are collected using a scanning
position-sensitive detector (X'Celerator) located 240 mm from the
specimen and Data Collector software v. 2.2b. Data acquisition
parameters are: Panalytical X-Pert Pro MPD PW3040 Pro, X-ray Tube:
Cu (1.54059 .ANG.), Voltage: 45 kV, Amperage: 40 mA, Scan Range:
1.00-39.99.degree. 2.theta., Step Size: 0.017.degree. 2.theta.,
Collection Time: 716 s, Scan Speed: 3.3.degree./min., Slit: DS:
1/2.degree., SS: null, Revolution Time: 1.0 s, Mode:
Transmission.
Example 13--XRPD of Mixture of Crystalline Form A and Minor
Quantity of Crystalline Form B
An XRPD pattern of a mixture of Crystalline Form A and a minor
quantity of Crystalline Form B product is in FIG. 49 (Example 17
for synthesis). The XRPD pattern is collected with a PANalytical
X'Pert PRO MPD diffractometer using an incident beam of Cu
radiation produced using an Optix long, fine-focus source. An
elliptically graded multilayer mirror is used to focus Cu K.alpha.
X-rays through the specimen and onto the detector. Prior to the
analysis, a silicon specimen (NIST SRM 640e) is analyzed to verify
the observed position of the Si 111 peak is consistent with the
NIST-certified position. A specimen of the sample is sandwiched
between 3-.mu.m-thick films and analyzed in transmission geometry.
A beam-stop, short antiscatter extension, and an antiscatter knife
edge are used to minimize the background generated by air. Soller
slits for the incident and diffracted beams are used to minimize
broadening from axial divergence. Diffraction patterns are
collected using a scanning position-sensitive detector
(X'Celerator) located 240 mm from the specimen and Data Collector
software v. 2.2b. Data acquisition parameters are: Panalytical
X-Pert Pro MPD PW3040 Pro, X-ray Tube: Cu (1.54059 .ANG.), Voltage:
45 kV, Amperage: 40 mA, Scan Range: 1.00-39.99.degree. 2.theta.,
Step Size: 0.017.degree. 2.theta., Collection Time: 720 s, Scan
Speed: 3.2.degree./min., Slit: DS: 1/2.degree., SS: null,
Revolution Time: 1.0 s, Mode: Transmission.
Example 14--Solution Calorimetry (SolCal) Analyses of Crystalline
Forms A and B
Solution calorimetry analysis for each form is measured in
triplicate in methanol and the data are summarized in Table 21. For
each test, two heats of solution are obtained--one calculated using
a calibration preceding the sample analysis and one calculated
using a calibration following the sample analysis. The mean values
from the two calibrations are also provided in the table. Clear
solutions are observed after each test.
The dissolutions of both Crystalline Forms A and B in methanol are
endothermic events with average heats of solution are 48.618 and
64.567 J/g, respectively. The standard deviation for each set is
0.457 and 0.344 J/g, respectively.
Crystalline Form B has a higher heat of solution value than Form A,
indicating Crystalline Form B is more stable than A at 25.degree.
C. The enthalpy of the transition calculated from the SolCal data
from Form B to Form A is about 15.9 J/g. The difference in the heat
of fusion in the solid-state transition in the DSC of Crystalline
Form B is 15.9 J/g (see FIGS. 8 and 55), which is in good agreement
with the SolCal results.
Solution calorimetry is performed using a Thermometric 2225
Precision Solution Calorimeter, a semi-adiabatic calorimeter.
Solution Calorimeter System v.1.2 software is used. Samples are
weighed into glass crushing ampoules and are sealed using silicone
rubber plugs and hot wax. Experiments are carried out in 100 mL of
methanol at 25.degree. C. The measurement of the heats of solution
of the samples is both preceded and followed by calibrations using
an internal heater. The heats of solution are calculated using
dynamic of calibration model.
TABLE-US-00037 TABLE 21 Heats of Solution of Crystalline Forms A
and B in Methanol .DELTA.H.sub.1, .DELTA.H.sub.2,
.DELTA.H.sub.mean, Sample Replicate J/g.sup.(a) J/g.sup.(b) J/g
Observation.sup.(c) Crystalline 1 (52.540 mg Crystalline 46.050
50.168 48.109 clear solution Form A Form A, stirrer 500 rpm) 2
(55.427 mg Crystalline 48.293 49.217 48.755 clear solution Form A,
stirrer 500 rpm) 3 (49.393 mg Crystalline 48.077 49.905 48.991
clear solution Form A, stirrer 500 rpm) average, J/g 48.618 --
standard deviation 0.457 -- Crystalline 1 (56.730 mg Crystalline
64.004 64.985 64.495 clear solution Form B Form A, stirrer 500 rpm)
2 (49.276 mg Crystalline 63.471 65.057 64.264 clear solution Form
A, stirrer 500 rpm) 3 (51.723 mg Crystalline 64.461 65.421 64.941
clear solution Form A, stirrer 500 rpm) average, J/g 64.567 --
standard deviation 0.344 -- .sup.(a)Calculated using the
calibration before breaking the sample vial. .sup.(b)Calculated
using the calibration after breaking the sample vial.
.sup.(c)Observations are made at the time when tests are
completed.
Example 15--Hot Stage Microscropy (HSM) of Crystalline Form A from
Example 1
Hot stage microscopy is performed using a Linkam hot stage (model
FTIR 600) mounted on a Leica DM LP microscope. Samples are observed
using a 20.times. objective (obj.). Samples are placed on a
coverslip, and a second coverslip is then placed over the sample.
Each sample is visually observed as the stage is heated. Images are
captured using a SPOT Insight.TM. color digital camera with SPOT
Software v. 4.5.9. The hot stage is calibrated using USP melting
point standards.
By HSM of Crystalline Form A, between 182 and 239.degree. C., the
smallest particles evaporate and the resulting vapor recrystallizes
into larger crystals. Condensation and melt are observed between
239 and 247.degree. C.; the needles appear to melt last consistent
with the multiple endotherms observed by DSC. Two preparations are
utilized for the analysis. For the first, discoloration
(decomposition) is observed after melt. For the second, rapid
cooling results in recrystallization of the melt.
Example 16--Preparation of Mixture of Crystalline Forms A and B
Commercially available reagents are used as received unless
otherwise noted. Reactions requiring inert atmospheres are run
under nitrogen unless otherwise noted.
TABLE-US-00038 MW d Compound (g/mol) (g/mL) Equivalents Amt/mol
Reaction 2-naphthylacetonitrile 167.21 NA 1.0 mol eq (SM) .sup. 50
Kg/299.03 mol (S)-(+)-epichlorohydrin 92.52 3.12 1.12 mol eq 31.0
Kg/334.9 mol tetrahydrofuran 72.11 0.889 5.0 ml/g SM 250 L 2M
sodium bis(trimethylsilyl)amide 2.0M 0.916 2 mol eq 299 L/598.0 mol
in THF borane-dimethylsulfide 10.0M 0.80 2.5 mol eq 89.7 L/897.0
mol Isolation 2M HCl (aqueous) 2M NA 11.5 ml/g SM 650 L isopropyl
acetate 102.13 0.872 4 mL/g SM as required water 18.02 1.00 5 mL/g
SM as required ammonia (aqueous) NA 0.889 2.0 mL/g SM 100 L
methylene chloride 60 1.325 4 .times. 5 mL/g SM as required
2-methyltetrahydrofuran 86.13 0.86 12.6 mL/g SM as required
para-toluenesulfonic acid 190.22 NA 0.953 mol eq. 54.2 Kg/284.9 mol
monohydrate
Steps 1 and 2
2-naphthylacetonitrile (50 Kg) is dissolved in THF (250 L), 32 kg
of (S)-(+)-epichlorohydrin is added and the solution cooled to
-10.degree. C. A 2.0 M solution of sodium hexamethyldisilylazane in
THF (299 L) is then added keeping the internal temperature below
-10.degree. C. This addition requires 14 hrs., 14 minutes to
complete. The reaction mixture is then stirred an additional four
hours at approximately -10.degree. C., after which a sample of the
reaction mixture is analyzed by HPLC. While keeping the internal
temperature less than 0.degree. C., borane dimethylsulfide (71 kg)
is added over four hours and 33 minutes. After completion of the
borane addition the reaction mixture is slowly heated to 60.degree.
C. to reduce the nitrile to the amine. During this heat-up, an
exotherm is noted, which initiates at 45.degree. C. After heating
at 60.degree. C. for 14 hours and 46 minutes, a sample of the
reaction mixture is analyzed by HPLC.
The reaction mixture is then cooled to 24.degree. C. and
transferred to a solution of 2M HCl over 2 hours and 28 minutes and
the reactor is rinsed with THF (22.3 Kg) and transferred to the HCl
containing reaction mixture. The two phase mixture is heated to
45.degree. C. to 55.degree. C. and stirred for 1 hour 48 minutes at
this temperature followed by cooling to 30.degree. C. The pH of the
quenched reaction mixture is measured and found to be 1. Reaction
workup continues by addition of IPAc, stir, and separate the
layers. Charge 1 M HCl solution to the organic layer, stir,
separate the layers, and discard the organic layer. Aqueous ammonia
is added to the combined aqueous layer and the pH measured which
shows a pH of 9. Workup then continues by extraction with two
extractions of the aqueous layer with IPAc. The combined organic
extracts are then washed with 5% sodium chloride solution. The
resulting organic layer is partially concentrated to azeotropically
dry and co-evaporation with methylene chloride four times and
followed by dilution with methylene chloride and transfer of the
reaction mixture via in-line filter to clean, dry reactor and
diluting with IPAc. p-Toluenesulfonic acid hydrate (54 Kg) is then
added in portions to precipitate the desired product as its pTsOH
salt and the reaction suspension is stirred over three hours at
10.degree. C. to 15.degree. C. and the product is isolated by
filtration. The filter cake is washed with 2-methyltetrahydrofuran
and followed by IPAc then pull dried over two hours. The crude
product is purified by stirring with 2-methyltetrahydrofuran over
11 hours 36 minutes at 10.degree. C. to 15.degree. C. and the
product is isolated by filtration. The filtered solid is washed
with 2-methyltetrahydrofuran and then dried to a constant weight to
give 73.8 Kg of the desired product as a white solid. Yield=73.8 Kg
(62%). HPLC=96.8%.
Steps 3 and 4
TABLE-US-00039 MW d Compound (g/mol) (g/mL) Equivalents Amt/mol
Reaction 2-naphthylcyclopropylamine-tosylate 399.51 NA 1.0 mol eq
73.8 Kg/184.7 mol salt 2-methyltetrahydrofuran 86.13 0.86 10 mL/g
SM as required isopropylacetate 102.13 0.872 as required as
required thionyl chloride 118.97 1.638 1.2 eq 26.4 Kg/221.9 mol
sodium hydroxide, 50% aqueous 40 1.548 11 mol eq 165.3 Kg Isolation
water 18.02 1.00 10 mL/g SM as required magnesium sulfate NA NA 0.5
g/g 36.5 Kg hydrogen chloride in isopropyl alcohol 5.7M NA 1.0 mol
eq 33.6 L Ethyl alcohol 200 (Special Industrial 80.25 0.786 14 mL/g
SM as required denatured)
The amine-pTsOH salt (73.8 Kg) obtained from step 2 above is
suspended in 2-methyltetrahydrofuran (738 L) to give a slurry.
Thionyl chloride (26.4 kg) is then added over three hours. Upon
completion of the thionyl chloride addition, the reaction mixture
is stirred three additional hours. Aqueous sodium hydroxide (5M, 10
mol equivalents) is added over three hours followed by two hours of
additional stirring. The layers are allowed to settle and the pH of
the aqueous layer is checked and found to be 9. Water (2 mL/g, SM)
is added, the reaction mixture is stirred 15 more minutes at room
temperature, and the layers are separated and the organic layer
washed twice with water. The aqueous layers are combined and back
extracted with 2-methyltetrahydrofuran and the initial organic
layer and the back extract combined. These combined organic layers
are washed with brine, dried over magnesium sulfate, and partially
concentrated. After concentration, hydrogen chloride in IPA (1.0
mol equivalent of HCl in IPA) is added and stirred 2 hours to form
the crude salt which is isolated by filtration, washed with
2-methyltetrahydrofuran and followed by IPAc and then pull dried
over 2 hours under vacuum.
The crude product (82.6 Kg) obtained from above is dissolved in 14
volumes of hot ethanol (70.degree. C.) and then filtered via an
encapsulated carbon filter to improve the color. The dissolution
vessel and the encapsulated carbon filter and transfer line are
then rinsed with additional hot ethanol (70.degree. C.) and the
rinse combined with the filtrate. The combined filtrate and washes
are partially concentrated in vacuo to approximately 5 total
volumes (relative to crude product input) and then stirred over two
hours at 0.degree. C. The resulting solids are isolated by
filtration, the filter cake washed with cooled (0.degree. C. to
5.degree. C.) ethanol and followed by IPAc and the washed solids
then dried to give 33.6 Kg of the product as a slightly off-white
solid. Yield=33.6 Kg (73% yield). Achiral HPLC=98%.
The material is then dried via cone drying. After drying, the
material is sieved.
A portion of the material (14 Kg) is then dissolved in 15 volumes
of hot ethanol (70.degree. C.) and filtered via an encapsulated
carbon filter to improve the color. The dissolution vessel and the
encapsulated carbon filter and transfer line are then rinsed with
additional hot ethanol (70.degree. C.) and the rinse combined with
the filtrate. The combined filtrate and washes are partially
concentrated in vacuo to approximately 8 total volumes (relative to
starting 14 Kg of
(1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane hydrochloride
input) and then stirred over two hours at 18.degree. C. The
resulting solids are isolated by filtration, the filter cake washed
with cooled (5.degree. C. to 10.degree. C.) ethanol and followed by
IPAc and the washed solids then dried to give 9.4 Kg (67.1% of
yield) of (1R,5S)-1-(naphthalen-2-yl)-3-azabicyclo[3.1.0]hexane
hydrochloride as a white solid. Achiral HPLC=98%.
An XRPD of the product is shown in FIG. 56. The XRPD is consistent
with Crystalline Form A with evidence of lower intensity peaks at
18.9.degree., 19.2.degree., 23.6.degree., 23.8.degree.,
28.2.degree., and 28.7.degree. 2.theta. attributed to Crystalline
Form B. The XRPD pattern is collected with a PANalytical X'Pert PRO
MPD diffractometer using an incident beam of Cu radiation produced
using an Optix long, fine-focus source. An elliptically graded
multilayer mirror is used to focus Cu K.alpha. X-rays through the
specimen and onto the detector. Prior to the analysis, a silicon
specimen (NIST SRM 640e) is analyzed to verify the observed
position of the Si 111 peak is consistent with the NIST-certified
position. A specimen of the sample is sandwiched between
3-.mu.m-thick films and analyzed in transmission geometry. A
beam-stop, short antiscatter extension, antiscatter knife edge, are
used to minimize the background generated by air. Soller slits for
the incident and diffracted beams are used to minimize broadening
from axial divergence. Diffraction patterns are collected using a
scanning position-sensitive detector (X'Celerator) located 240 mm
from the specimen and Data Collector software v. 2.2b.
XRPD Data acquisition parameters are: Panalytical X-Pert Pro MPD
PW3040 Pro, X-ray Tube: Cu (1.54059 .ANG.), Voltage: 45 kV,
Amperage: 40 mA, Scan Range: 1.00-39.99.degree. 2.theta., Step
Size: 0.017.degree. 2.theta., Collection Time: 721 s, Scan Speed:
3.2.degree./min., Slit: DS: 1/2.degree., SS: null, Revolution Time:
1.0 s, Mode: Transmission.
Example 17--Preparation of Mixture of Crystalline Forms A and B
To a 2 L 3 neck round bottom flask with mechanical stirring, reflux
condenser, nitrogen inlet, thermocouple, and heating mantle, is
added 50 g of the product from Example 16 above and EtOH Special
Industrial (750 mL, 15 vol). The mixture is heated to reflux
(77.degree. C.). Solids dissolve forming clear solution at
72.degree. C. Loose charcoal slurry is added (5 g, 0.1 eq in 100 mL
EtOH) and the mixture is stirred for 1 hour. Filter and rinse with
hot EtOH (150 mL). Split filtrate into two equal portions.
Portion 1
Concentrate down to 10 vol (250 mL) at 50.degree. C. Small amount
of solids start to precipitate during concentration. Transfer to
500 mL 3 neck round bottom flask with mechanical stirring and allow
to cool to room temp. Stir for 2 hours at room temp. Suspension
forms. Filter and rinse with EtOH (50 mL, 2 vol) followed by IPAc
(50 mL). Pull dry on filter. Yield=20.5 g (82%).
Portion 2
Concentrate down to 7 vol (175 mL) at 50.degree. C. Small amount of
solids start to precipitate during concentration. Transfer to 500
mL 3 neck round bottom flask with mechanical stirring and allow to
cool to room temp. Stir for 2 hours at room temp. Suspension forms.
Filter and rinse with EtOH (50 mL, 2 vol) followed by IPAc (50 mL).
Pull dry on filter. Yield=19.8 g (79.2%).
Product from the two portions are combined and an XRPD pattern of
the combined portions is in FIG. 49 (Example 13).
Example 18--Preparation of Crystalline Forms
Crystalline Form A from Example 5 is used to make the following
crystalline forms.
TABLE-US-00040 Solvent Method.sup.a Observation.sup.b Results IPA
1. saturated solution, ambient 1. -- A + C 2. cooled in freezer 2.
fine irregular, B 1. saturated solution, ambient 1. -- B + C 2.
cooled in freezer 2. fines, B .sup.aTime and temperature are
approximate. .sup.bB = birefringent when observed by polarized
light microscopy.
* * * * *