U.S. patent number 10,178,859 [Application Number 15/641,854] was granted by the patent office on 2019-01-15 for insect trap using uv led lamp.
This patent grant is currently assigned to SEOUL VIOSYS CO., LTD.. The grantee listed for this patent is Seoul Viosys Co., Ltd.. Invention is credited to Jong Hyun Koo, Dong-Kyu Lee, Hyun Su Song.
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United States Patent |
10,178,859 |
Koo , et al. |
January 15, 2019 |
Insect trap using UV LED lamp
Abstract
The present disclosure relates to an insect trap using an
ultraviolet light-emitting diode (UV LED) lamp, and more
particularly, to an insect trap using, in place of a conventional
UV light source lamp, a UV LED lamp that significantly increases
the insect trapping efficiency. The insect trap according to the
present disclosure includes: a UV LED lamp disposed in an air inlet
portion of the duct, and including a printed circuit board (PCB)
that has a UV LED chip mounted thereon; an installing portion for
installing the UV LED lamp on; and a trapping portion provided near
the installing portion.
Inventors: |
Koo; Jong Hyun (Ansan-si,
KR), Song; Hyun Su (Ansan-si, KR), Lee;
Dong-Kyu (Busan, KR) |
Applicant: |
Name |
City |
State |
Country |
Type |
Seoul Viosys Co., Ltd. |
Ansan-si |
N/A |
KR |
|
|
Assignee: |
SEOUL VIOSYS CO., LTD.
(Ansan-si, KR)
|
Family
ID: |
55165609 |
Appl.
No.: |
15/641,854 |
Filed: |
July 5, 2017 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20170311583 A1 |
Nov 2, 2017 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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14478937 |
Sep 5, 2014 |
9717228 |
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62028383 |
Jul 24, 2014 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
A01M
1/08 (20130101); H01L 33/32 (20130101); H01L
33/06 (20130101) |
Current International
Class: |
A01M
1/08 (20060101); H01L 33/06 (20100101); H01L
33/32 (20100101) |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
First Office Action in Chinese Patent Application No.
201510440994.3, dated Aug. 14, 2017. cited by applicant .
Supplemental Notice of Allowability dated Nov. 9, 2017 in U.S.
Appl. No. 15/630,903, 2 pages. cited by applicant .
Non-Final Office Action dated Jan. 26, 2018 in U.S. Appl. No.
15/788,183, 16 pages. cited by applicant .
Notice of Allowance dated Aug. 1, 2018 in U.S. Appl. No.
15/788,183, 5 pages. cited by applicant.
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Primary Examiner: Hoge; Gary C
Attorney, Agent or Firm: Perkins Coie LLP
Claims
What is claimed is:
1. An insect trap comprising: a duct including a suction fan
therein; a UV LED lamp disposed in an air inlet portion of the
duct, and including a printed circuit board (PCB) that has a UV LED
chip; and a trapping portion provided in an air outlet portion of
the duct, wherein the UV LED chip includes: an n-type contact
layer; a p-type contact layer; and an active region located between
the n-type contact layer and the p-type contact layer and including
barrier layers including a first barrier layer located closest to
the n-type contact layer, wherein the barrier layers include
AlInGaN or AlGaN, and wherein the UV LED chip is positioned on a
first side of the PCB and a second side of the PCB that is opposite
to the first side of the PCB serves to dissipate heat generated
from the UV LED chip, and wherein the insect trap further includes
a transparent housing located at the first side of the PCB
extending along an entire length of the PCB and including a
material that allows UV light produced by the UV LED lamp to pass
therethrough.
2. The insect trap of claim 1, wherein the UV LED lamp includes an
additional UV LED chip disposed on the first side of the PCB and
separated from the UV LED chip, the additional UV LED chip
configured to emit UV light having a peak value of substantially
the same wavelength as that of the UV LED chip.
3. The insect trap of claim 1, wherein the UV LED lamp is disposed
in a periphery of the air inlet portion of the duct such that UV
light emitted from the UV LED chip is directed toward an inside of
the duct.
4. The insect trap of claim 1, further comprising an additional UV
LED chip that is disposed to be spaced apart from the UV LED
chip.
5. The insect trap of claim 1, wherein a peak wavelength of UV
light emitted from the UV LED chip is 335 nm to 395 nm.
6. The insect trap of claim 1, wherein a peak wavelength of UV
light emitted from the UV LED chip is 360 nm to 370 nm.
7. The insect trap of claim 1, wherein a diffusion angle of UV
light emitted from the UV LED chip is 120.degree. or less.
8. The insect trap of claim 1, wherein the duct is formed through a
first housing, wherein a second housing is disposed in a direction
perpendicular to a lengthwise direction of the duct, and wherein
the first housing and the second housing are spaced apart from each
other.
9. The insect trap of claim 8, wherein the UV LED lamp is disposed
closer to the second housing than to the first housing.
10. The insect trap of claim 1, wherein a .phi.e/.phi.v value of
the UV LED lamp is 98 or more, in which .phi.e represents a radiant
flux having a unit of mW, and .phi.v has a unit of lm.
11. The insect trap of claim 1, wherein spectrum half-width of UV
light emitted from the UV LED lamp is 14.5 nm or less.
12. The insect trap of claim 1, wherein, the first barrier layer
has an Al content higher than those of other barrier layers.
13. An insect trap comprising: a duct including a suction fan
therein; a UV LED lamp disposed in an air inlet portion of the
duct, and including a printed circuit board (PCB) that has a UV LED
chip emitting UV light with a peak wavelength that ranges from 335
nm to 395 nm; and a trapping portion provided in an air outlet
portion of the duct, wherein the UV LED chip includes: an n-type
contact layer; a p-type contact layer; and an active region located
between the n-type contact layer and the p-type contact layer and
including barrier layers including a first barrier layer located
closest to the n-type contact layer, wherein the barrier layers
include AlInGaN or AlGaN, and wherein the UV LED lamp further
includes a terminal located at each sidewall of the UV LED lamp and
electrically connected to a power source to supply power to the
PCB.
14. The insect trap of claim 13, wherein the first barrier layer
has an Al content higher than those of other barrier layers.
15. The insect trap of claim 13, wherein the UV LED lamp includes
an additional UV LED chip disposed on the first side of the PCB and
separated from the UV LED chip, the additional UV LED chip
configured to emit UV light having a peak value of substantially
the same wavelength as that of the UV LED chip.
16. The insect trap of claim 13, wherein the UV LED lamp is
disposed in the air inlet portion of the duct such that UV light
emitted from the UV LED chip is directed toward an inside of the
duct.
17. The insect trap of claim 13, further comprising an additional
UV LED chip that is disposed to be spaced apart from the UV LED
chip.
18. The insect trap of claim 13, wherein a peak wavelength of UV
light emitted from the UV LED chip is 360 nm to 370 nm.
19. The insect trap of claim 13, wherein a diffusion angle of UV
light emitted from the UV LED chip is 120.degree. or less.
20. The insect trap of claim 13, wherein the duct is formed through
a first housing, wherein a second housing is disposed in a
direction perpendicular to a lengthwise direction of the duct, and
wherein the first housing and the second housing are spaced apart
from each other.
21. The insect trap of claim 13, wherein the UV LED lamp is
disposed closer to the second housing than to the first
housing.
22. The insect trap of claim 13, wherein a .phi.e/.phi.v value of
the UV LED lamp is 98 or more, in which .phi.e represents a radiant
flux having a unit of mW, and .phi.v has a unit of lm.
23. The insect trap of claim 13, wherein spectrum half-width of UV
light emitted from the UV LED lamp is 14.5 nm or less.
Description
BACKGROUND
1. Technical Field.
The present disclosure relates to an insect trap using an
ultraviolet light-emitting diode (UV LED) lamp, and more
particularly, to an insect trap using, in place of a conventional
UV light source lamp, a UV LED lamp that significantly increases
the insect trapping efficiency.
2. Related Art
UV light sources have been used for medical purposes such as
sterilization, disinfection and the like, the purpose of analysis
based on changes in irradiated. UV light, industrial purposes such
as UV curing, cosmetic purposes such as UV tanning, and other
purposes such as insect trapping, counterfeit money discrimination
and the like.
Conventional UV light source lamps that are used as such UV light
sources include mercury lamps, excimer lamps, deuterium lamps and
the like. However, such conventional lamps all have problems in
that the power consumption and heat generation are high, the life
span is short, and toxic gas filled therein causes environmental
pollution.
As an alternative to overcome the above-described problems of the
UV light source lamps, UV LEDs have attracted attention. UV LEDs
are advantageous in that they have low power consumption and cause
no environmental pollution. However, the production cost of LED
packages that emit light in the UV range is considerably higher
than the production cost of LED packages that emit light in the
visible range, and various products using UV LED packages have not
been developed since the characteristics of UV light is quite
different from the characteristics of light in the visible
range.
In addition, even when a UV LED is applied to a conventional UV
light source lamp product instead of the UV light source lamp, the
conventional UV light source lamp product does not exhibit its
effect in many cases, because the light-emission characteristics of
the UV LED differ from those of the conventional UV light source
lamp.
For example, in the case of an insect trap, the characteristics of
UV light have a great effect on the attraction of insects. For this
reason, if UV lamp in a conventional insect trap is simply replaced
with a UV LED, there is a problem in that the insect trapping
effect can decrease rather than increase.
SUMMARY
Various embodiments are directed to an insect trap using, in place
of a conventional. UV lamp, a UV LED lamp that increases the insect
trapping efficiency.
In an embodiment, an insect trap may include: a duct including a
suction fan therein; a UV LED lamp disposed in an air inlet portion
of the duct, and including a printed circuit board (PCB) that has a
UV LED chip mounted thereon; an installing portion for installing
the UV LED lamp on; and a trapping portion provided near the
installing portion.
A plurality of UV LED chips may be mounted on the PCB, and may emit
UV light having a peak value of substantially the same
wavelength.
UV light that is emitted from the UV LED chip may have a peak
wavelength of 335-395 nm.
UV light that is emitted from the UV LED chip may have a peak
wavelength of 360-370 nm.
UV light that is emitted from the UV LED chip may have a diffusion
angle of 120.degree. or less.
The UV LED lamp may have a .phi.e/.phi.v value of 98 or more,
wherein .phi.e represents radiant flux having units of mW, and
.phi.v has units of lm.
UV light that is emitted from the UV LED lamp has a spectrum
half-width of 14.5 nm or less. Spectrum half-width is also called
spectral line half-width.
Transparent housing made of a material that allows UV light to
readily pass therethrough may be provided at the UV LED chip side
of the UV LED lamp, wherein the surface of the transparent housing
may be roughend.
The roughened surface may be formed by sand blast process.
The radiant flux of the UV LED lamp may be 750 mW to 1500 mW.
UV light emitted from the chips of the UV LED lamp may be directed
upwardly or laterally from the insect trap.
The UV LED chip includes: an n-type contact layer including an
AlGaN layer or an AlInGaN layer; a p-type contact layer including
an AlGaN layer or an AlInGaN layer; an active region having a
multiple quantum well structure, located between the n-type contact
layer and the p-type contact layer; and at least one electron
control layer located between the n-type contact layer and the
active region. Also, the active region having the multiple quantum
well structure may include barrier layers and well layers, the
barrier layers may be formed of AlInGaN or AlGaN, and a first
barrier layer located closest to the n-type contact layer may have
an Al content higher than those of other barrier layers. Meanwhile,
the electron control layer is formed of AlInGaN or AlGaN, and has
an Al content higher than those of layers adjacent thereto so as to
interfere with the flow of electrons moving into the active region.
This may reduce the mobility of electrons, thereby increasing the
recombination rate of electrons and holes in the active region.
In particular, the first barrier layer may also be formed so as to
interfere with the flow of electrons, and thus the flow of
electrons may be effectively delayed by the first barrier layer and
the electron control layer.
Herein, the well layers may be formed of InGaN.
Meanwhile, when the barrier layers contain indium (In), the lattice
mismatch between the well layers and the barrier layers may be
reduced, thereby improving the crystal quality of the well
layers.
The first barrier layer located closest to the n-type contact layer
may have an Al content that is higher than those of other barrier
layers by at least 5%, at least 10% or at least 20%. In some
embodiments, the first barrier layer located closest to the n-type
contact layer may have an Al content of 30-50%.
In the specification, the content of each metal element is
expressed as the percentage of the content of each metal element
relative to the sum of the contents of metal elements in a gallium
nitride-based layer. In other words, the content of Al in a gallium
nitride-based layer represented by AlxInyGazN is expressed as a
percentage (%) according to the equation 100.times.x/(x+y+z).
Generally, the sum of x, y and z is 1 (x+y+z=1), and thus the
percentage of each metal element generally corresponds to a value
obtained by multiplying the composition ratio (x, y or z) by
100.
Meanwhile, barrier layers other than the first barrier layer may be
formed of an AlInGaN or AlGaN having an Al content of 10-30% and an
In content of 1% or less.
In an embodiment, the first barrier layer may be formed of an
AlInGaN having an In content of 1% or less.
In some embodiments, the p-type contact layer may include a lower
high-concentration doped layer, an upper high-concentration doped
layer, and a low-concentration doped layer located between the
lower high-concentration doped layer and the upper
high-concentration doped layer. Also, the low-concentration doped
layer has a thickness greater than those of the lower and upper
high-concentration doped layers. When the low-concentration doped
layer is formed to have a relatively thick thickness, the
absorption of light by the p-type contact layer may be
prevented.
In addition, the n-type contact layer may include a lower aluminum
gallium nitride layer, an upper aluminum gallium nitride layer, and
a multilayered intermediate layer located between the lower
aluminum gallium nitride layer and the upper aluminum gallium
nitride layer. When the multilayered intermediate layer is disposed
in the intermediate portion of the n-type contact layer, the
crystal quality of epitaxial layers that are formed on the n-type
contact layer may be improved. Particularly, the multilayered
intermediate layer may have a structure formed by alternately
depositing AlInN and GaN.
The n-type contact layer may include a modulation-doped AlGaN
layer. The upper aluminum gallium nitride layer may be a
modulation-doped layer.
Meanwhile, the UV LED chip may further include: a superlattice
layer located between the n-type contact layer and the active
region; and an electron injection layer located between the
superlattice layer and the active region. The electron injection
layer may have an n-type impurity doping concentration higher than
that of the superlattice layer, and the first barrier layer may
come into contact with the electron injection layer. When the first
barrier layer is disposed so as to come into contact with the
electron injection layer having a relatively high n-type impurity
doping concentration, the flow of electrons may effectively be
delayed.
In addition, the UV LED chip may further include an electrostatic
discharge preventing layer located between the n-type contact layer
and the superlattice layer, and a first electron control layer may
be disposed between the electrostatic discharge preventing layer
and the superlattice layer. The electrostatic discharge preventing
layer functions to prevent electrostatic discharge by restoring
crystal quality reduced by doping of an impurity into the n-type
contact layer including AlGaN or AlInGaN.
In some embodiments, the electrostatic discharge preventing layer
may include: an undoped AlGaN layer; a low-concentration AlGaN
layer doped with an n-type impurity at a concentration lower than
that of the n-type contact layer; and high-concentration AlGaN
layer doped with an n-type impurity at a concentration higher than
that of the low-concentration AlGaN layer, in which the
low-concentration AlGaN layer may be located between the undoped
AlGaN layer and the high-concentration AlGaN layer. The undoped
AlGaN layer functions to restore crystal quality, and the crystal
quality of layers being grown thereon is maintained by slowly
increasing the doping concentration. In addition, the first
electron control layer may come into contact with the
high-concentration AlGaN layer. When the first electron control
layer is disposed so as to come into contact with the
high-concentration AlGaN layer, the flow of electrons may be
effectively delayed.
The n-type contact layer and the superlattice layer may have an Al
content of less than 10%, and the first electron control layer may
have an Al content of 10-20%.
Meanwhile, a second electron contact layer may be located between
the n-type contact layer and the electrostatic discharge preventing
layer. In addition, the n-type contact layer and the electrostatic
discharge preventing layer may have an Al content of less than 10%,
and the second electron control layer may have an Al content of
10-20%.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a side view of an insect trap according to the first
embodiment of the present disclosure.
FIG. 2 is a side cross-sectional view of an insect trap according
to the first embodiment of the present disclosure.
FIG. 3 is an enlarged view of a portion of a UV LED lamp used in an
insect trap of the present disclosure.
FIG. 4 is a perspective view of an insect trap according to the
second embodiment of the present invention.
FIG. 5 is a cross-sectional view illustrating a UV LED chip
according to an embodiment of the present disclosure.
FIG. 6 is a cross-sectional view illustrating the multiple quantum
well structure of a UV LED chip according to an embodiment of the
present disclosure.
FIG. 7 is a schematic band diagram illustrating an energy band gap
according to an embodiment of the present disclosure.
FIG. 8 is a schematic cross-sectional view illustrating a UV LED
chip having electrodes according to an embodiment of the present
disclosure.
FIG. 9 is a graph showing the light outputs of UV LED chips
according to embodiments of the present disclosure.
DETAILED DESCRIPTION
Exemplary embodiments will be described below in more detail with
reference to the accompanying drawings. The disclosure may,
however, be embodied in different forms and should not be
constructed as limited to the embodiments set forth herein. Rather,
these embodiments are provided so that this disclosure will be
thorough and complete, and will fully convey the scope of the
disclosure to those skilled in the art. Throughout the disclosure,
like reference numerals refer to like parts throughout the various
figures and embodiments of the disclosure.
[1st Embodiment]
FIG. 1 is a side view of an insect trap according to the present
disclosure, FIG. 2 is a side cross-sectional view of the insect
trap according to the present disclosure, and FIG. 3 is an enlarged
view of a portion of a UV LED lamp used in the insect trap of the
present disclosure.
The insect trap of the present disclosure includes a second housing
18 formed in a cover shape at the top of the insect trap, a first
housing 17 disposed below the second housing 18 so as to be spaced
apart therefrom, and a plurality of elongate connecting members 16
configured to fix the second housing 18 and the first housing 17 to
each other in a spaced state.
A lamp support unit 19 is disposed at the bottom of the second
housing 18, and a UV LED lamp 5 is supported thereby and is
electrically connected to a power source. As shown in FIG. 2, the
UV LED lamp 5 supported by the lamp support unit 19 is located in
the spacing "a" between the first housing 17 and the second housing
18 so as to be closer to the second housing 18.
In the first housing 17, a duct 10 is formed vertically, and in the
duct 10, a suction fan 13 configured to suck air along the
lengthwise direction of the duct 10 is disposed. Thus, as the
suction fan 13 rotates, air is sucked from an air inlet 11 to an
air outlet 15.
In the lower portion of the first housing 17, there is provided a
trapping portion 80 capable of trapping insects sucked together
with air by the suction fan 13. The trapping portion 80 includes a
net so that air sucked by the suction fan is easily removed from
the trapping portion 80 so that no pressure rising occurs in the
trapping portion 80, while insects do not come out of the trapping
portion 80.
The UV LED lamp 5 includes UV LED chips 50 mounted on printed
circuit board (PCB) 52 having a long flat plate shape. A plurality
(for example, about eight) of UV LED chips 5 are disposed on one
side of the PCB 52 so as to be spaced apart from one another along
the lengthwise direction of the PCB 52. On the other side of the
PCB 52, there is disposed a heat-dissipating pin 58 serving to
dissipate the heat generated in the UV LED chip, and at the UV LED
chip side, there is provided a transparent housing 56 made of a
material that allows UV light to readily pass therethrough. In
addition, on both ends of the UV LED lamp, there is disposed a
terminal 54 that is connected to the power terminal of the lamp
support unit 19 in order to supply power to the PCB 52.
The plurality of UV LED chips 50 disposed on the PCB 52 are
configured to have a peak at substantially the same wavelength. In
this case, the height of the peak at the wavelength becomes higher
while the width of the peak is not increased, and thus the UV LED
chips can emit very strong UV light in a specific wavelength
range.
The UV LED lamp 5 of the present disclosure is disposed in the air
inlet portion of the duct so that UV light emitted from the UV LED
chips 50 is directed toward the inside of the duct 10. Thus, UV
light emitted from the UV LED lamp is concentrated toward the
inside of the duct 10, unlike a conventional black light (EL) lamp.
For this concentration, the diffusion angle of UV light that is
emitted from the UV LED chip is preferably limited to 120.degree.
or less.
When an insect trap having the UV LED lamp is configured as
described above, the point light source will irradiate UV light
concentrically toward the duct, and thus the intensity of the UV
light will become stronger, and insects located far apart from the
UV LED lamp will be attracted to a region below the UV LED lamp.
Meanwhile, as shown in FIG. 2, the flow of air occurs in the air
inlet 11, and this flow of air is stronger as it is closer to the
first housing 17 than to the second housing 18 in the spacing "a"
between the two housings. Thus, when the UV LED lamp disposed
closer to the second housing 18 is configured to irradiate UV light
toward the first housing 17, insects will be attracted
concentrically to a space below the UV LED lamp and sucked securely
into the trapping portion by the strong flow of air.
In addition, the UV LED lamp according to the present disclosure,
has a point light, source that illuminates the duct 10,
particularly the suction fan 13. The high-speed rotation of the
suction fan 13 influences the form of UV light passing through the
suction fan 13 so that UV light illuminated into the trapping
portion 80 below the suction fan 13 is very dynamically illuminated
to insects located far apart from the insect trap, thereby
attracting the insects close to the insect trap. Also, the insects
that came close to the insect trap are attracted to a space below
the UV LED lamp and trapped in the trap, in which stronger UV light
is present, as described above.
The following shows the results of performing insect trapping
experiments using the insect trap using the UV LED lamp according
to the present disclosure and an insect trap using a conventional
black light (BL) lamp under the same conditions
The specifications of the two lamps are shown in Table 1 below.
TABLE-US-00001 TABLE 1 Power Wp [nm] Fw [nm] .PHI.e [mW] Voltage
Current (Watt Peak Spectrum Radiant [V] (Amps [A]) [W]) PF
wavelength half-width flux .PHI.v [lm] UV LED lamp 220.1 0.034 4.98
0.66 367.94 9.24 759.19 5.7 Black light lamp 220.1 0.247 6.4 0.12
365.88 18.36 528.8 8.37
As can be seen in Table 1 above, the two lamps have similar peak
wavelengths (about 365 nm), but the spectrum half-width of the UV
LED lamp is only the half of that of the BL lamp, and the intensity
of UV light versus visible light is 133 mW/lm for the UV LED lamp,
which is at least two times greater than 63 mW/lm for the BL
lamp.
Using these insect traps, an experiment was performed twice in an
outdoor stall, and the number of individuals, which were attracted
and trapped overnight (trap index), is shown in Table 2 below.
TABLE-US-00002 TABLE 2 % Mean Common name Trap index ratio (S.D.)
Species (vector disease) B/L LED B/L LED Aedes vexans Aedes vexans
(west 1 7 12.5 87.5 nile fever) 0 0 (--) (--) Anopheles sinensis
Anopheles sinensis 296 1,028 16.8b.sup.2) 83.2a (malaria) 316 2,500
(7.9) (7.9) Culex pipiens Culex pipiens (west 118 497 17.8b 82.2a
nile fever) 104 536 (2.1) (2.1) Cx. tritaeniorhynchus Cx. 687 3,307
14.8b 85.2a tritaeniorhynchus (J. encephalitis) 452 3,196 (3.4)
(3.4) Mansonia uniforms Mansonia uniforms 145 269 26.5b 73.5a 80
368 (12.1) (12.1) Total 1,247 5,108 16.1b 83.9a 952 6,600 (4.9)
(4.9)
As can be seen from the experimental results in Table 2 above, the
use of the insect trap according to the present disclosure shows
insect trapping efficiency that is at least 5 times higher than
that of the use of the conventional BL lamp insect trap.
This result is because the .phi.e/.phi.v value of the UV LED lamp
is greater than that of the BL lamp, and/or the half-width of the
peak of the UV LED lamp is smaller than that of the BL lamp, and
thus UV light is concentrated on a peak at a specific
wavelength.
Since the target of above experiment was mosquitoes, the result of
the experiment is reliable at least for mosquitoes.
[2nd Embodiment]
FIG. 4 is a perspective view of an insect trap according to the
second embodiment of the present invention. The insect trap shown
in FIG. 4 is a product named Luralite made by P&L Systems Ltd.
The same UV LED lamp as the first embodiment is used for the second
embodiment. The UV LED lamp is installed so as to emit UV light
upwardly as seen in FIG. 4. UV light does not have to be emitted
upwardly, but it is desirable that the UV LED lamp is installed so
as not to emit the UV light directly toward human bodies in the
living space.
The experiments are performed in the cases that radiant flux of the
UV LED lamps are different, that UV light is uniformly
surface-emitted from the housing of the UV LED lamp roughened by
sand blast process or is spot-emitted directly from the chips of
the UV LED lamp, and that the wavelength of UV light of the UV LED
lamps are different.
<Experiment 1>
The 1st experiment is attractant competition between 500 mW and
1,000 mW of radiant flux for uniformalized 365 nm LED UV lights
using Luralite traps against house flies (Musca domestica) in a
dark laboratory condition.
House fly collection rates were compared between 500 mW and 1,000
mW with uniformalized 365 nm LED UV lights using Luralite traps
against 50 Musca domestica. The experiment site was a screened
enclosure (1.8.times.3.7.times.1.8 m) in a dark laboratory. The
experiments were conducted the paired tests in simultaneous
exposure conditions for 1, 2, 4, 8, and 12 hours from the morning,
Room Temp.: 27.+-.1.degree. C., RH: 64.+-.4%, 2 replicates.
The collection rates of 1,000 mW for uniformalized 365 nm LED UV
lightswere significantly higher than those of 500 mW against house
flies at 8 and 12 hour exposure periods (see Table 1). As a result,
1,000 mW radiant flux for uniformalized 365 nm LED UV lights was
more effective than 500 mW for house fly light traps.
TABLE-US-00003 TABLE 3 Comparisons of collection rates between 500
mW and 1,000 mW radiant flux for uniformalized 365 nm UV LED light
using Luralite fry traps against 50 Musca domestica in a screened
enclosure in a dark condition for 12 hours from the morning, four
replicates. Exposure Cumulative % Mean Collection (S.D) Period (hr)
500 mW 1,000 mW Total 1 18.0 .+-. 10.1a.sup.1) 23.5 .+-. 2.5a 41.5
.+-. 10.0 2 25.0 .+-. 9.5a 37.0 .+-. 7.7a 62.0 .+-. 11.0 4 32.5
.+-. 9.0a 50.0 .+-. 9.4a 82.5 .+-. 3.8 8 33.5 .+-. 8.7b 64.0 .+-.
7.8a 97.5 .+-. 3.0 12 34.0 .+-. 7.8b 66.0 .+-. 7.8a 100.0 .+-. 0.0
.sup.1)Means in the same rows followed by the same letter are not
significantly different (p > 0.05; paired t-test using SPSS PC
software).
<Experiment 2>
The 2nd experiment is attractant competition between 500 mW and
1,000 mW of radiant flux for direct 365 nm LED UV Lights using.
Luralite traps against house flies (Musca domestica) in a dark
laboratory condition.
House fly collection rates were compared between 500 mW and 1,000
mW with direct (not uniformalized) 365 nm LED UV lights using
Luralite traps against 50 Musca domestica. The experiment site was
a screened enclosure (1.8.times.3.7.times.1.8 m) in a dark
laboratory. The experiments were conducted the paired tests in
simultaneous exposure conditions for 1, 2, 4, 8, and 12 hours from
the morning, Room Temp.: 27.+-.1.degree. C., RH: 64.+-.4%, 4
replicates.
The collection rates of 1,000 mW for direct (not uniformalized) 365
nm LED UV lights were significantly higher than those of 500 mW
against house flies at all exposure periods (Table 2). As a result,
1,000 mW radiant flux for direct (not uniformalized) 365 nm LED UV
lights was more effective than 500 mW for house fly light
traps.
TABLE-US-00004 TABLE 4 Comparisons of collection rates between 500
mW and 1,000 mW radiant flux for direct (not uniformalized) 365 nm
UV LED light using Luralite fry traps against 50 Musca domestica in
a screened enclosure in a dark condition for 12 hours from the
morning, four replicates. Exposure Cumulative % Mean Collection
(S.D) Period (hr) 500 mW 1,000 mW Total 1 7.5 .+-. 3.4b.sup.1) 18.0
.+-. 3.7a 25.5 .+-. 6.4 2 14.0 .+-. 4.3b 26.0 .+-. 2.3a 10.0 .+-.
4.3 4 18.0 .+-. 3.7b 45.0 .+-. 3.8a 63.0 .+-. 5.3 8 28.5 .+-. 5.7b
60.5 .+-. 8.7a 89.0 .+-. 6.0 12 30.0 .+-. 4.3b 70.0 .+-. 4.3a 100.0
.+-. 0.0 .sup.1)Means in the same rows followed by the same letter
are not significantly different (p > 0.05; paired t-test using
SPSS PC software).
<Experiment 3>
The 3rd experiment is attractant competition between direct (not
uniformalized) and uniformalized UV lights of 365 nm LED at 1,000
mW using Luralite traps against house flies (Musca domestica) in a
dark laboratory condition.
House fly collection rates were compared between direct (not
uniformalized) and uniformalized UV lights at 365 nm LED of both
1,000 mW radiant flux using Luralite traps against 50 Musca
domestica. The experiment site was a screened enclosure
(1.8.times.3.7.times.1.8 m) in a dark laboratory. The experiments
were conducted the paired tests in simultaneous exposure conditions
for 1, 2, 4, 8, and 12 hours from the morning, Room Temp.:
26.+-.1.degree. C., RH: 62.+-.4%, 4 replicates.
The collection rates of uniformalized 365 nm LED UV lights were
significantly higher than those of direct (not uniformalized)
lights against house flies on 2, 4, 8, and 12 hour exposure periods
(Table 3). As a result, uniformalized 365 nm LED UV lights at 1,000
mW effected more for house fly light traps than direct (not
uniformalized) 365 nm LED UV lights.
TABLE-US-00005 TABLE 5 Comparisons of collection rates between
direct (not uniformalized) and uniformalized 365 nm UV LED light in
1,000 mW using Luralite fry traps against 50 Musca domestica in a
screened enclosure in a dark condition for 12 hours from the
morning, four replicates. Exposure Cumulative % Mean Collection
(S.D) Period (hr) Not Uniformalized Uniformalized Total 1 3.0 .+-.
1.2a.sup.1) 7.0 .+-. 2.6a 10.0 .+-. 2.3 2 6.5 .+-. 4.1b 29.5 .+-.
12.8a 36.0 .+-. 12.8 4 15.0 .+-. 8.4b 52.0 .+-. 10.5a 67.0 .+-. 9.0
8 22.0 .+-. 8.5b 76.0 .+-. 10.3a 98.0 .+-. 2.8 12 22.5 .+-. 9.1b
77.5 .+-. 9.1a 100.0 .+-. 0.0 .sup.1)Means in the same rows
followed by the same letter are not significantly different (p >
0.05; paired t-test using SPSS PC software).
<Experiment 4>
The 4th experiment is attractant competition between 340 nm and 365
nm of UV LED lights using Luralite traps against house flies (Musca
domestica) in a dark laboratory condition.
At first, house fly collection rates were compared between 340 nm
and 365 nm at both 500 mW of electrical power with uniformalized
LED lights using Luralite traps against 50 Musca domestica. The
experimental site was a screened enclosure (1.8.times.3.7.times.1.8
m) in a dark laboratory. The experiments were conducted the paired
tests in simultaneous exposure conditions for 1, 2, 4, 8, and 12
hours from the morning, Room Temp.: 26.+-.1.degree. C., RH:
64.+-.4%.
Next, house fly collection rates were compared between 340 nm at
500 mW and 365 nm at 1,000 mW of radiant flux with uniformalized
LED lights using Luralite traps against 50 Musca domestica. The
experimental site was the same with the previous described
enclosure. The experiments were conducted the paired tests in
simultaneous exposure conditions for 1, 2, 4, 8, and 12 hours from
the morning, Room Temp.: 26.+-.1.degree. C., RH: 64.+-.4%.
The collection rates of 365 nm LED UV lights were significantly
higher than those of 340 nm LED UV at both 500 mW against house
flies at 8 and 12 hours (Table 4-1). The collection rates of 365 nm
LED UV lights at 1,000 mW were significantly higher than those of
340 nm LED UV at 500 mW against house flies at 4, 8, and 12 hours
(Table 4-2). As a result, 365 nm LED UV lights was more effective
than 365 nm LED UV lights for house fly light traps.
TABLE-US-00006 TABLE 6-1 Comparisons of collection rates between
340 nm and 365 nm at both 500 mW radiant flux with uniformalized
LED lights using Luralite fly traps against 50 Musca domestica in a
screened enclosure in a dark condition for 12 hours from the
morning, two replicates. Exposure Cumulative % Mean Collection
(S.D) Period (hr) 365 nm 340 nm Total 1 11.0 .+-. 1.4a.sup.1) 3.0
.+-. 1.4a 14.0 .+-. 0.0 2 23.0 .+-. 4.2a 5.0 .+-. 1.4a 28.0 .+-.
2.8 4 56.0 .+-. 5.7a 11.0 .+-. 1.4a 67.0 .+-. 4.2 8 79.0 .+-. 7.1a
14.0 .+-. 0.0b 93.0 .+-. 7.1 12 84.0 .+-. 2.8a 16.0 .+-. 2.8b 100.0
.+-. 0.0 .sup.1)Means in the same rows followed by the same letter
are not significantly different (p > 0.05; paired t-test using
SPSS PC software).
TABLE-US-00007 TABLE 6-2 Comparisons of collection rates between
340 nm at 500 mW and 365 nm at 1,000 mW of radiant flux with
uniformalized LED lights using Luralite fly traps against 50 Musca
domestica in a screened enclosure in a dark condition for 12 hours
from the morning, two replicates. Exposure Cumulative % Mean
Collection(S.D) Period (hr) 365 nm 340 nm Total 1 16.0 .+-.
2.8a.sup.1) 4.0 .+-. 0.0a 20.0 .+-. 2.8 2 29.0 .+-. 7.1a 7.0 .+-.
1.4a 36.0 .+-. 8.5 4 60.0 .+-. 2.8a 11.0 .+-. 1.4b 71.0 .+-. 4.2 8
85.0 .+-. 1.4a 13.0 .+-. 1.4b 98.0 .+-. 0.0 12 87.0 .+-. 1.4a 13.0
.+-. 1.4b 100.0 .+-. 0.0 .sup.1)Means in the same rows followed by
the same letter are not significantly different (p > 0.05;
paired t-test using SPSS PC software).
<Experiment 5>
The 5th experiment Attractant Effect of 365 nm uniformalized LED UV
lights of 1,000 mW using a Luralite trap against house flies (Musca
domestica) in a dark laboratory condition.
House fly collection rates were evaluated 365 nm at 1,000 mW of
electrical power with uniformalized LED lights using Luralite traps
against 50 Musca domestica. The experimental site was a screened
enclosure (1.8.times.3.7.times.1.8 m) in a dark laboratory for 1,
2, 4, 8, and 12 hours from the morning, Room Temp.: 26+1.degree.
C., RH: 64.+-.4%.
The collection rates of uniformalized 365 nm LED UV lights at 1,000
mW were very high such as 58.5%, 88.5%, and 100.0% after 4, 8, and
12 hour exposures, respectively (Table 5).
TABLE-US-00008 TABLE 7 Collection rates (%) of 1,000 mW electrical
power of uniformalized 365 nm UV LED light using Luralite trap
against 50 Musca domestica in a screened enclosure in a dark
condition. for 1, 2, 4, 8 and 12 hour exposure periods from 9:00,
four replicates. Replicate Exposure Period (hr) number 1 2 4 8 12 #
1 10.0 32.0 68.0 96.0 100.0 # 2 6.0 24.0 52.0 86.0 100.0 # 3 8.0
28.0 60.0 90.0 100.0 # 4 8.0 26.0 54.0 82.0 100.0 Mean 8.0 27.5
58.5 88.5 100.0 (S.D) (1.6) (3.4) (7.2) (6.0) (0.0)
As can be seen from the experimental results of experiment 1 and
experiment 2, fly collection rate is much higher in the condition
that radiant flux is higher. As can be seen from the experimental
results of experiment 3, UV light uniformly surface-emitted from
the roughened surface has higher fly collection rate than that of
UV light directly emitted from the UV led chips. As can be seen
from the experimental results of experiment 4, UV light that has a
peak wavelength of 365 nm has higher fly collection rate than that
of UV light that has a peak wavelength of 340 nm.
As can be seen from the experimental results of these experiments,
uniformly surface-emitted UV light that has higher radiant flux and
peak wavelength of 365 nm has higher fly collection rate. It is
more efficient when the radiant flux is near 1000 mW than 500 mW.
But performance degradation would be caused by the high temperature
when it is used for a long time, since too high radiant flux also
makes too much heat compared with the limit of heat radiation
efficiency. So it is important to limit the maximum radiant flux in
order to avoid performance degradation due to heat. It is confirmed
from additional experiments that UV light emitting efficiency does
not decrease even if it is used for a long time when the radiant
flux of the UV LED lamp is 750 mW to 1500 mW.
The fly collection efficiency of uniformly surface-emitted UV light
that has 1,000 mW radiant flux and peak wavelength of 365 nm can be
seen from the experimental results of experiment 5.
Meanwhile, the UV LED chip that is used in the insect trap of the
present disclosure has the following structure having the effect of
emitting UV light with high efficiency.
FIG. 5 is a cross-sectional view illustrating a UV LED chip
according to an embodiment of the present disclosure, and FIG. 6 is
an enlarged cross-sectional view illustrating the multiple quantum
well structure of a UV LED chip according to an embodiment of the
present disclosure.
Referring to FIG. 5, the UV LED chip includes an n-type contact
layer 27, an electrostatic discharge preventing layer 30, a
superlattice layer 35, an active region 39, a p-type contact layer
43, and electron control layers 28 and 34. In addition, the UV LED
chip may further include a substrate 21, a nucleation layer 23, a
buffer layer 25, an electron injection layer 37, an electron
blocking layer 41 or a delta-doped layer 45.
The substrate 21 is a substrate on which a gallium nitride-based
semiconductor layer is to be grown. It may be a sapphire, SiC or
spinel substrate, etc., but is not specifically limited thereto.
For example, it may be a patterned sapphire substrate (PSS).
The nucleation layer 23 may be formed of (Al, Ga)N at a temperature
of 400.about.600.degree. C. in order to allow the buffer layer 25
to grow on the substrate 21. For example, it is formed of GaN or
AlN. The nucleation layer may be formed to have a thickness of
about 25 nm. The buffer layer 25 serves to suppress the occurrence
of defects such as dislocation between the substrate 21 and the
n-type contact layer 27, and is grown at a relatively high
temperature. For example, the buffer layer 25 may be formed of
undoped GaN to a thickness of about 1.5 .mu.m.
The n-type contact layer 27 is formed of a gallium nitride-based
semiconductor layer doped with an n-type impurity, for example, Si,
and may be formed to have a thickness of, for example, about 3
.mu.m. The n-type contact layer 27 may include an AlGaN layer or an
AlInGaN layer, and may have a single layer or multi-layer
structure. For example, as shown in the figure, the n-type contact
layer 27 may include a lower GaN layer 27a, an intermediate layer
27b and an upper AlGaN layer 27c. Herein, the intermediate layer
27b may be formed of AlInN or may be formed to have a multi-layer
structure (including a superlattice structure) composed of, for
example, about 10 alternating layers of AlInN and GaN. The lower
GaN layer 27a may be formed to have thickness of about 1.5 .mu.m,
and the upper AlGaN layer 27c may be formed to have a thickness of
about 1 .mu.m. The upper AlGaN layer 27c may have an Al content of
less than 10%, for example, about 9%.
The intermediate layer 27b is formed to have a thickness smaller
than that of the upper AlGaN layer 27c, and may be formed to have a
thickness of about 80 nm. The crystallinity of the upper AlGaN
layer 27c can be increased by forming the intermediate layer 27b on
the lower GaN layer 27a and forming the upper AlGaN layer 27c
thereon.
In particular, a Si impurity is doped into the lower GaN layer 27a
and the upper AlGaN layer 27c at a concentration of 1E18/cm.sup.3
or higher. The intermediate layer 27b may be doped to a level equal
to or lower than that of the upper AlGaN layer 27c, and may not be
intentionally doped with any impurity. Further, the upper AlGaN
layer 27c may be formed of a modulation-doped layer by repeating
doping and undoping.
The lower GaN layer 27a and the upper AlGaN layer 27c are doped
with a high concentration of an impurity, and thus the resistance
component of the n-type contact layer 27 can be reduced. An
n-electrode 49a (see FIG. 8) that comes into contact with the
n-type contact layer 27 may come into contact with the upper AlGaN
layer 27c. Particularly, when a UV LED chip having a vertical
structure is to be formed by removing the substrate 21, the lower
GaN layer 27a and the intermediate layer 27b may also be
removed.
The electron control layer 28 is placed on the n-type contact layer
27 so as to come into contact with the n-type contact layer 27.
Particularly, the electron control layer 28 is placed on a layer
that comes into contact with the n-electrode 49a, for example, the
upper AlGaN layer 27c. The electron control layer 28 may have an Al
content higher than that of the n-type contact layer 27, and may be
formed of AlGaN or AlInGaN. For example, the Al content of the
electron control layer 28 may range from 10% to 20%. The electron
control layer 28 may be formed to have a thickness of about 1-10
nm.
The electron control layer 28 has an Al content higher than that of
the n-type contact layer 27, and thus serves to interfere with the
migration of electrons from the n-type contact layer 27 to the
active region 39. Accordingly, the electron control layer 28 serves
to control the mobility of electrons, thereby increasing the
recombination rate of electrons and holes in the active region
39.
The electrostatic discharge preventing layer 30 is formed in order
to improve the crystal quality of an epitaxial layer to be formed
thereon. The electrostatic discharge preventing layer 30 may
include an undoped AlGaN layer 29, a low-concentration AlGaN layer
31 and a high-concentration AlGaN layer 33. The undoped AlGaN layer
29 may be formed of intentionally undoped AlGaN, and may be formed
to have a thickness smaller than that of the upper AlGaN layer 27c,
for example, a thickness of 80 nm to 300 nm. As the n-type contact
layer 27 is doped with an n-type impurity, residual stress is
produced in the n-type contact layer 27, and the crystal quality is
reduced. Also, as the electron control layer 28 having a relatively
high Al content is formed, the crystal quality is reduced. For this
reason, when another epitaxial layer is grown on the n-type contact
layer 27 or the electron control layer 28, it will be difficult to
form an epitaxial layer having good crystal quality. However,
because the undoped AlGaN layer 29 is not doped with an impurity,
it acts as a restoration layer that restores the reduced crystal
quality of the n-type contact layer 27. Thus, in a preferred
embodiment, when the electron control layer 28 is omitted, the
undoped AlGaN layer 29 is formed directly on the n-type contact
layer 27 so as to come into contact with the n-type contact layer
27, and when the electron control layer 28 is formed, the undoped
AlGaN layer 29 is formed directly on the electron control layer 28
so as to come into contact with the electron control layer 28. In
addition, because the undoped AlGaN layer 29 has a resistivity
higher than that of the n-type contact layer 27, electrons that
flow from the n-type contact layer 27 into the active layer 39 can
be uniformly dispersed in the n-type contact layer 27 before they
pass through the undoped AlGaN layer 29.
The low-concentration AlGaN layer 31 is placed on the undoped GaN
layer 29, and has an n-type impurity doping concentration lower
than that of the n-type contact layer 27. The low-concentration
AlGaN layer 31 may have a Si doping concentration in the range of,
for example, 5.times.10.sup.17/cm.sup.3 to
5.times.10.sup.18/cm.sup.3, and may be formed to have a thickness
smaller than that of the undoped AlGaN layer 29, for example, a
thickness of 50-150 nm. Meanwhile, the high-concentration AlGaN
layer 33 is placed on the low-concentration AlGaN layer 31, and has
an n-type impurity doping concentration higher than that of the
low-concentration AlGaN layer 31. The high-concentration AlGaN
layer 33 may have a Si doping concentration that is substantially
similar to that of the n-type contact layer 27. The
high-concentration AlGaN layer 33 may be formed to have a thickness
smaller than that of the low-concentration AlGaN layer 31, for
example, a concentration of about 30 nm.
The n-type contact layer 27, the electron control layer 28, the
undoped AlGaN layer 29, the low-concentration AlGaN layer 31 and
the high-concentration AlGaN layer 33 can be continuously grown by
feeding metal gas sources into a chamber. As the metal gas sources,
organic sources for aluminum (Al), gallium (Ga) and/or indium (In),
for example, trimethyl aluminum (TMA), trimethyl gallium (TMG)
and/or trimethyl indium (TMI), are used. Meanwhile, as a source gas
for Si, SiH.sub.4 may be used. These layers may be grown at a first
temperature, for example, 1050.degree. C. to 1150.degree. C.
The electron control layer 34 is placed on the electrostatic
discharge preventing layer 30. Particularly, the electron control
layer 34 is placed in contact with the concentration AlGaN layer
33. The electron control layer 34 has an Al content higher than
that of the electrostatic discharge preventing layer 30, and may be
formed of AlGaN or AlInGaN. For example, the Al content of the
electron control layer 34 may range from 10% to 20%. The electron
control layer 34 may be formed to have a thickness of about 1-10
nm.
Because the electron control layer 34 has an Al content higher than
that of the electrostatic discharge preventing layer 30, it serves
to interfere with the migration of electrons from the n-type
contact layer 27 to the active layer 39. Thus, the electron control
layer 34 functions to control the mobility of electrons to thereby
increase the recombination rate of electrons and holes in the
active region 39.
The superlattice layer 35 is placed on the electron control layer
34. The superlattice layer 35 can be formed, for example, by
depositing about 30 alternating layers of a first AlInGaN layer and
a second AlInGaN layer, which have different compositions, in such
a manner that each of the layers has a thickness of 20 A. The first
AlInGaN layer and the second AlInGaN layer have a band gap larger
than that of well layers 39w (see FIG. 6) in the active region 39.
The content of indium (In) in each of the first AlInGaN layer and
the second AlInGaN layer may be lower than the content of indium
(In) in the well layers 39w, but is not limited thereto, and at
least one of the first AlInGaN layer and the second AlInGaN layer
may have an In content higher than that of the well layers 39w. For
example, the layer having a higher In content among the first
AlInGaN layer and the second AlInGaN layer may have an In content
of about 1% and an Al content of about 8%. The superlattice layer
35 may be formed of an undoped layer that is not intentionally
doped with any impurity. Because the superlattice layer 35 is
formed of an undoped layer, it can reduce the leakage current of
the UV LED chip.
The superlattice layer 35 can act as a buffer layer for an
epitaxial layer formed thereon, and thus improves the crystal
quality of the epitaxial layer.
The electron injection layer 37 has an n-type impurity doping
concentration higher than that of the superlattice layer In
addition, the electron injection layer may have an n-type impurity
doping concentration that is substantially equal to that of the
n-type contact layer 27. For example, the n-type impurity doping
concentration may range from 2.times.10.sup.8/cm.sup.3 to
2.times.10.sup.19/cm.sup.3, and preferably from
1.times.10.sup.19/cm.sup.3 to 2.times.10.sup.19/cm.sup.3. The
electron injection layer 37 may be formed to have a thickness
similar to or smaller than that of the high-concentration doped
layer 33, for example, a thickness of about 20 nm. The electron
injection layer 37 may be formed of, for example, AlGaN.
On the electron injection layer 37, the active region 39 is placed.
FIG. 6 is an enlarged cross-sectional view of the active region
39.
Referring to FIG. 6, the active region 39 has multiple quantum well
structure including barrier layers 39b deposited alternately with
well layers 39w. The well layers 39w may have a composition that
emits near ultraviolet light at a wavelength ranging from 360 nm to
390 nm. For example, the well layers 39w may be formed of GaN,
InGaN or AlInGaN. Particularly, it may be formed of InGaN. Herein,
the content of indium (In) in the well layers 39w is determined
according to the required wave length of near ultraviolet light.
For example, the In content of the well layers 39w may be about 1%
or less. The well layers may be formed to have a thickness of about
20-30 .ANG..
The barrier layers 39b may be formed of a gallium nitride-based
semiconductor layer, for example, GaN, InGaN, AlGaN or AlInGaN,
which has a band gap larger than that of the well layer.
Particularly, the barriers layer may be formed of AlInGaN including
In, and thus the lattice mismatch between the well layer 39w and
the barrier layer 39b can be reduced.
Meanwhile, among the barrier layers 39b1, 39b and 39bn, the barrier
layer 39b1 located closest to the electron injection layer 37 or
the superlattice layer 35 may have an Al content higher than those
of the other barrier layers. For example, the Al content of the
first barrier layer 39b1 may be higher than those of the other
barrier layers 39b by at least 5%, at least 10% or at least 20%.
The Al content of the first barrier layer 39b1 may, for example,
range from 30% to 50%. For example, the other barrier layers 39b
and 39bn may have an Al content of about 20%, and the first barrier
layer 39b1 may have an Al content of about 40%. The content of in
in these barrier layers 39b1, 39b and 39bn is about 1% or less.
Generally, barrier layers in UV LED chips are formed to have the
same composition. However, in this embodiment, the first barrier
layer 39b1 has a higher Al content compared to other barrier layers
39b. Because the first barrier layer 39b1 is formed to have a
higher band gap compared to other barrier layers 39b, the first
barrier layer 39b1 can function to trap carriers in the active
region 39. In addition, the first barrier layer 39b1 has an Al
content higher than that of the 3 superlattice layer 35 or the
electron injection layer 37, and thus can function as an electron
control layer that interferes with the flow of electrons.
Meanwhile, the first barrier layer preferably has a thickness that
is substantially equal to those of barrier layers other than the
last barrier layer located closest to an electron blocking layer 41
or a p-type contact layer 43. The first barrier layer may have a
thickness of, for example, 40-60 .ANG., particularly about 50
.ANG..
The active region 39 may come into contact with the electron
injection layer 37. Particularly, the first barrier layer 39b1
comes into contact with the electron injection layer 37 so as to
effectively delay the flow of electrons. Meanwhile, the barrier
layers and quantum well layers of the active region 39 may be
formed of undoped layers that are not doped with any impurity in
order to improve the crystal quality of the active region, but a
portion or the whole of the active region may also be doped with an
impurity in order to lower the forward voltage.
Referring to FIG. 5 again, a p-type contact layer 43 may be placed
over the active region 39, and an electron blocking layer 41 may be
disposed between the active region 39 and the p-type contact layer
43. The electron blocking layer 41 may be formed of AlGaN or
AlInGaN. If the electron blocking layer 41 is formed of AlInGaN,
its lattice mismatch with the active region 39 can further be
reduced. Herein, the electron blocking layer 41 may have an Al
content of, for example, about 40%. The electron blocking layer 41
may be doped with p-type impurity, for example, Mg, but may not be
intentionally doped with any impurity. The electron blocking layer
41 may be formed to have a thickness of about 15 nm.
The p-type contact layer 43 may be formed of an Mg-doped AlGaN
layer or AlInGaN layer, and may, for example, have an Al content of
about 8% and a thickness of 100 nm. The p-type contact layer 43 may
be formed of a single layer, but is not limited thereto, and as
shown in the figure, may include a lower high-concentration doped
layer 43a, a low-concentration doped layer 43b and an upper
high-concentration doped layer 43c. The low-concentration doped
layer 43b has a doping concentration lower than those of the lower
and lower high-concentration doped layer 43a and 43c, and is
disposed between the lower high-concentration doped layer 43a and
the upper high-concentration doped layer 43c. The low-concentration
doped layer 43b can be grown while the feed of an MG source gas
(e.g., Cp2Mg) is blocked during growth. In addition, during the
growth of the low-concentration doped layer 43b, H.sub.2 gas may be
excluded, and N.sub.2 gas may be used as a carrier gas in order to
reduce the impurity content of the layer. Also, the
low-concentration doped layer 43b may be formed thicker than the
lower and upper high-concentration doped layers 43a and 43c. For
example, the low-concentration doped layer 43b may be formed to
have a thickness of about 60 nm, and each of the lower and upper
high-concentration doped layers 43a and 43c may be formed to have a
thickness of 10 nm. Accordingly, the loss of near ultraviolet light
by the p-type contact layer 43 can be prevented or reduced by
improving the crystal quality of the p-type contact layer 43 and
reducing the impurity concentration of the p-type contact layer
43.
Meanwhile, a delta-doped layer 45 may be placed on the p-type
contact layer 43 to lower ohmic contact resistance. The delta-doped
layer 45 is doped with a high-concentration n-type or p-type
impurity in order to lower the ohmic contact resistance between an
electrode formed thereon and the p-type contact layer 43. The
delta-doped layer 45 may be formed to have a thickness of about 2-5
.ANG..
FIG. 7 is a schematic band diagram illustrating an energy band gap
according to an embodiment of the present disclosure. For
simplicity of illustration, FIG. 7 schematically shows only a
conduction band.
Referring to FIG. 7, an electrode control layer 28 is placed
between an n-type contact layer 27 and an electrostatic discharge
preventing layer 30, and an electron control layer 34 is placed
between the electrostatic discharge preventing layer 30 and a
superlattice layer 35. Also, a first barrier layer 39b1 in an
active layer 39 is located closer to the superlattice layer 35 than
to the well layers or other barrier layers of the active region 39.
The electron control layers 28 and 34 have a band gap larger than
those of the layers adjacent thereto, and thus acts as a barrier
against the migration of electrons from the n-type contact layer 27
to the active region 39. Particularly, the electron control layer
28 has a band gap larger than that of the n-type contact layer 27,
and the electron control layer 34 has a band gap larger than that
of the electrostatic discharge preventing layer 30. The first
barrier layer 39b1 also has a band gap larger than that of the
superlattice layer 35 or the electron injection layer 37, and thus
acts as a barrier for electrons that are injected from the
superlattice layer 35 into the active region 39.
As shown in FIG. 7, the electron control layers 28 and 34 together
with the first barrier layer 39b1 may be disposed between the
n-type contact layer 27 and the active region 39, thereby delaying
the flow of electrons. Thus, electrons can be prevented from
deviating from the active region 39 without being recombined with
holes, thereby increasing the recombination rate of electrons and
holes. A light-emitting diode adopting the electron control layers
28 and 34 will show better effects when it operates at high current
densities.
FIG. 8 is a schematic cross-sectional view illustrating a UV LED
chip having electrodes according to an embodiment of the present
disclosure. FIG. 8 shows a UV LED chip having a horizontal
structure, fabricated by patterning the epitaxial layers grown on a
substrate 21.
Referring to FIG. 8, the UV LED chip includes, in addition to the
substrate and epitaxial layers described with reference to FIG. 5,
a transparent electrode 47, an n-electrode 49a and a p-electrode
49b.
The transparent electrode 47 may be formed of, for example, indium
tin oxide (ITO). The p-electrode 49b is formed on the transparent
electrode 47. Meanwhile, the n-electrode 49a comes into contact
with the n-type contact layer 27, particularly the upper AlGaN
layer27c, exposed by etching the epitaxial layers. The electron
control layer 28 is placed on the n-type contact layer 27 with
which the n-electrode 49a comes into contact, so as to interfere
with the flow of electrons from the n-type contact layer 27 to the
active region 39.
Although the UV LED chip having the horizontal structure has been
shown and described in this embodiment, the scope of the present
disclosure is not limited to the UV LED chip having the horizontal
structure. A UV LED chip having a flip chip structure can be
fabricated by patterning the epitaxial layers grown on the
substrate 21. Alternatively, a UV LED chip having a vertical
structure can also be fabricated by removing the substrate 21.
EXPERIMENTAL EXAMPLES
Epitaxial layers as shown in FIG. 5 were grown on a patterned
sapphire substrate using a metal-organic chemical vapor deposition
(MOCVD) system under the same conditions while changing only the
conditions for formation of the electron control layers 28 and 34.
UV LED chips of Example 1 were samples in which the electron
control layers 28 and 34 were not formed, and a first barrier layer
in the samples had a thickness of about 5 nm and an Al content of
about 40%. Meanwhile, UV LED chips of Example 2, Example 3 and
Example 4 were fabricated in the same manner as that of Example 1,
except that the electron control layer 28 and the electron control
layer 34 were formed. Each of the electron control layer 28 and the
electron control layer 34 was formed to have a thickness of about 5
nm. Meanwhile, the electron control layers 28 and 34 in the UV LED
chips of Examples 2 to 4 were formed to have Al contents of about
10% for Example 2, about 15% for Example 3, and about 20% for
Example 4. The content of Al was measured using an atomic probe.
Meanwhile, in each of the Examples, the content of Al in each of
the n-type contact layer 27 and the electrostatic discharge
preventing layer 33 was about 9%, and the content of Al in the
superlattice layer 35 was about 8%.
Two wafers for each of Examples 1 to 3 were fabricated, and one
wafer for Example 4 was fabricated. The light output of each of the
UV LED chips was measured at the wafer level, and the mean light
output value for each wafer is shown in FIG. 9.
As can be seen in FIG. 9, the UV LED chips of Examples 2 and 3
having the electron control layers 28 and 34 formed thereon showed
higher light outputs compared to the UV LED chip having no electron
control chip. In addition, the light output increased as the Al
content of the electron control layers 28 and 34 increased.
As described above, a UV LED lamp in an insect trap according to
the present disclosure emits UV light, which is concentrated on a
peak at a specific wavelength and is stronger than visible light,
while the consumption of energy used is reduced. In addition, the
insect trapping efficiency of the insect trap can be significantly
increased due to the characteristics of the position and direction
of the UV LED lamp provided in the insect trap.
While various embodiments have been described above, it will be
understood to those skilled in the art that the embodiments
described are by way of example only. Accordingly, the disclosure
described herein should not be limited based on the described
embodiments.
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