U.S. patent number 10,079,351 [Application Number 14/777,082] was granted by the patent office on 2018-09-18 for method of preparing organic electronic device.
This patent grant is currently assigned to LG DISPLAY CO., LTD.. The grantee listed for this patent is LG DISPLAY CO., LTD.. Invention is credited to Jun Rye Choi, Sang Jun Lee.
United States Patent |
10,079,351 |
Lee , et al. |
September 18, 2018 |
Method of preparing organic electronic device
Abstract
A method of preparing an organic electronic device, an organic
electronic device prepared using the same, and a use thereof are
provided. For example, the method of effectively preparing an
organic electronic device using a flexible substrate, the organic
electronic device prepared using the same, and the use thereof may
be provided.
Inventors: |
Lee; Sang Jun (Daejeon,
KR), Choi; Jun Rye (Daejeon, KR) |
Applicant: |
Name |
City |
State |
Country |
Type |
LG DISPLAY CO., LTD. |
Seoul |
N/A |
KR |
|
|
Assignee: |
LG DISPLAY CO., LTD. (Seoul,
KR)
|
Family
ID: |
53033567 |
Appl.
No.: |
14/777,082 |
Filed: |
September 30, 2014 |
PCT
Filed: |
September 30, 2014 |
PCT No.: |
PCT/KR2014/009238 |
371(c)(1),(2),(4) Date: |
September 15, 2015 |
PCT
Pub. No.: |
WO2015/047053 |
PCT
Pub. Date: |
April 02, 2015 |
Prior Publication Data
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|
|
|
Document
Identifier |
Publication Date |
|
US 20160035988 A1 |
Feb 4, 2016 |
|
Foreign Application Priority Data
|
|
|
|
|
Sep 30, 2013 [KR] |
|
|
10-2013-0116356 |
Dec 10, 2013 [KR] |
|
|
10-2013-0153462 |
Sep 30, 2014 [KR] |
|
|
10-2014-0131985 |
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
51/003 (20130101); H01L 51/0097 (20130101); B32B
3/30 (20130101); B32B 27/08 (20130101); B32B
27/283 (20130101); H01L 2251/10 (20130101); H01L
51/56 (20130101); Y02P 70/50 (20151101); Y02E
10/549 (20130101); H01L 2251/5338 (20130101); B32B
2457/206 (20130101); H01L 51/004 (20130101) |
Current International
Class: |
H01L
51/00 (20060101); B32B 27/08 (20060101); B32B
27/28 (20060101); B32B 3/30 (20060101); H01L
51/56 (20060101) |
References Cited
[Referenced By]
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10-2009-0036427 |
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10-2012-0027632 |
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10-2012-0106659 |
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Jul 2013 |
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200405130 |
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2011/024690 |
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Mar 2011 |
|
WO |
|
Primary Examiner: Vetere; Robert A
Attorney, Agent or Firm: Dentons US LLP
Claims
What is claimed is:
1. A method of preparing an organic electronic device, comprising:
forming a polymer layer having a convex portion and a concave
portion formed in a surface thereof on an entire surface of a
carrier substrate; disposing a flexible substrate on the polymer
layer to come in contact with the convex portion of the polymer
layer; forming an organic electronic element on a top surface of
the flexible substrate; and peeling off the flexible substrate and
the organic electronic element from the polymer layer.
2. The method of claim 1, wherein the polymer layer comprises
polyorganosiloxane.
3. The method of claim 2, wherein the polyorganosiloxane comprises
a repeating unit represented by the following Formula 1:
##STR00002## wherein R.sub.1 and R.sub.2 are each independently
hydrogen, an alkyl group, an alkenyl group, or an aryl group.
4. The method of claim 1, wherein the convex portion of the polymer
layer is formed so that a contact ratio of the convex portion of
the polymer layer to the flexible substrate is in a range of 10 to
95%, based on the total area of the polymer layer.
5. The method of claim 1, wherein the convex portion of the polymer
layer is formed so that an aspect ratio of the convex portion is in
a range of 0.0001 to 10,000.
6. The method of claim 1, wherein the forming of polymer layer
comprises: forming a layer of a curable polymer composition on the
carrier substrate; bringing the layer of the curable polymer
composition into contact with a mold; and curing the layer of the
curable polymer composition brought into contact with the mold.
7. The method of claim 6, wherein the curable polymer composition
is selected from the group consisting of an addition-curable
silicon-based material, a condensation- or polycondensation-curable
silicon-based material, a UV-curable silicon-based material, and a
peroxide-vulcanized silicon-based material.
8. The method of claim 1, wherein the flexible substrate is a
thin-film glass.
9. The method of claim 1, wherein the flexible substrate is a
polymer film.
Description
This application is a National Stage Application of International
Application No. PCT/KR2014/009238, filed on Sep. 30, 2014, which
claims the benefit of Korean Patent Application No.
10-2013-0116356, filed on Sep. 30, 2013, Korean Patent Application
No. 10-2013-0153462, filed on Dec. 10, 2013 and Korean Patent
Application No. 10-2014-0131985, filed on Sep. 30, 2014, all of
which are hereby incorporated by reference in their entirety for
all purposes as if fully set forth herein.
FIELD
The present application relates to a method of preparing an organic
electronic device, an organic electronic device prepared using the
same, and a use thereof.
BACKGROUND
An organic electronic device (OED) refers to a device that includes
at least one layer of an organic material capable of conducting an
electric current. Kinds of the OED include an organic light
emitting diode (OLED), an organic solar cell, an organic
photoconductor (OPC), or organic transistor, etc.
A typical organic electronic device is generally prepared on a
rigid substrate such as glass. For these types of rigid elements,
research on a flexible element having a flexible substrate has been
conducted instead of a typical glass substrate. Flexible substrates
may be mainly classified into three types: a thin-film glass
substrate, a metal foil substrate, and a plastic substrate.
A method of preparing an element using a flexible substrate
requires special attention due to flexibility of the flexible
substrate even when the flexible substrate has rigidity
substantially similar to that of the rigid substrate. As the method
using the flexible substrate, there is a method including attaching
a flexible substrate to a hard carrier substrate, performing
subsequent processes and peeling off elements from the carrier
substrate (for example, see the patent document 1). In such a
method, after a proper adhesive material is formed on an edge
region of the carrier substrate attached to the flexible substrate,
a process of removing the edge region is generally performed to
finally peel off the flexible substrate. Therefore, the method has
a problem in that preparation efficiency may be degraded due to the
presence of such a process, and the elements may be damaged while
peeling off of the substrate when the adhesive material is not
properly removed.
PRIOR ART DOCUMENT
Patent Document
PATENT DOCUMENT 1: Korean Unexamined Patent Application Publication
No. 2013-0072651
DESCRIPTION
Object
The present application is directed to providing a method of
preparing an organic electronic device, an organic electronic
device prepared using the same, and a use thereof. For example, one
major object of the present application is to provide a method of
preparing an organic electronic device effectively using a flexible
substrate, an organic electronic device prepared using the same,
and a use thereof.
Solution
One aspect of the present application provides a method of
preparing an organic electronic device, which includes forming a
polymer layer on a carrier substrate, disposing a flexible
substrate on the polymer layer, and forming an organic electronic
element on the substrate. The preparation method may further
include peeling off the flexible substrate from the polymer layer
after the above-described operations.
In the foregoing, the carrier substrate serves to support the
flexible substrate or the organic electronic element during an
operation of preparing or transporting the organic electronic
element. Various types of substrates may be used as such a carrier
substrate without particular limitation as long as they can serve
as the proper support such as a rigid substrate. For example, a
glass substrate may be used as the substrate, but the present
application is not limited thereto. For example, various rigid
substrates may be applied as the carrier substrate.
In the preparation method according to one illustrative embodiment
of the present application, a polymer layer is formed on such a
carrier substrate. The flexible substrate is attached onto the
carrier substrate during a preparation or transportation operation
to exhibit proper adhesive strength. In this case, the polymer
layer may serve to easily peel off the flexible substrate during a
subsequent peeling operation.
Materials of the polymer layer are not particularly limited as long
as they can serve as described above. One example of the material
may include a polyorganosiloxane. The polyorganosiloxane has an
advantage to easily control adhesive strength to other components
by controlling the curing conditions, adjusting its own shape, or
adding an additive.
Specific types of the polyorganosiloxane may be chosen in
consideration of a purpose, but the present application is not
particularly limited thereto.
For example, a compound including a repeating unit represented by
the following Formula 1 may be used as the polyorganosiloxane.
##STR00001##
In Formula 1, R.sub.1 and R.sub.2 are each independently hydrogen,
an alkyl group, an alkenyl group, or an aryl group.
Unless particularly defined otherwise in this specification, the
term "alkyl group" may refer to an alkyl group having 1 to 20
carbon atoms, 1 to 16 carbon atoms, 1 to 12 carbon atoms, 1 to 8
carbon atoms, or 1 to 4 carbon atoms. The alkyl group may be
linear, branched, or cyclic. Also, the alkyl group may be
optionally substituted with one or more substituents.
Unless particularly defined otherwise in this specification, the
term "alkenyl group" may refer to an alkenyl group having 2 to 20
carbon atoms, 2 to 16 carbon atoms, 2 to 12 carbon atoms, 2 to 8
carbon atoms, or 2 to 4 carbon atoms. The alkenyl group may be
linear, branched, or cyclic, and may be optionally substituted with
one or more substituents.
Unless particularly defined otherwise, the term "aryl group" may
refer to a monovalent residue derived from a compound or a
derivative thereof, which includes a benzene ring or has a
structure in which two or more benzene rings are joined together or
in which two or more benzene rings are condensed or joined together
while sharing one or two or more carbon atoms. In general, a
category of the term "aryl group" disclosed in this specification
may include an aralkyl group or an arylalkyl group in addition to
the functional groups normally referred to as aryl groups. The aryl
group may be, for example, an aryl group having 6 to 25 carbon
atoms, 6 to 21 carbon atoms, 6 to 18 carbon atoms, or 6 to 12
carbon atoms. Examples of the aryl group that may be used herein
may include a phenyl group, a dichlorophenyl, a chlorophenyl, a
phenylethyl group, a phenylpropyl group, a benzyl group, a tolyl
group, a xylyl group, or a naphthyl group.
In the polyorganosiloxane having such a backbone, a polymer layer
having desired physical properties may be formed by adjusting the
kind and ratio of the functional groups (R.sub.1 and R.sub.2), when
necessary.
For example, in the functional groups, hydrogen or an alkenyl group
is a functional group which can take part in a curing reaction of
the polyorganosiloxane. Thus, desired physical properties may be
ensured by adjusting the kind and ratio of the functional groups so
as to adjust a degree of cure.
Specific types of the polyorganosiloxane having the same backbone
as in Formula 1 are not particularly limited. For example, a
polydialkylsiloxane widely known as polydimethylsiloxane in the
related art may be used.
In the present application, the polymer layer formed on the carrier
substrate may be formed so that the polymer layer has a proper
convex portion. As a result, the polymer layer may serve to
maintain the flexible substrate properly, and simultaneously remove
the flexible substrate easily upon removal of the substrate. Also,
unlike conventional techniques, since the convex portion is
properly formed, an operation of removing a portion of the
substrate may not be necessarily performed upon removal of the
substrate.
That is, the contact area between the flexible substrate and the
polymer layer may be properly adjusted by such as convex portion,
and thus the above-described effects may be achieved.
A method of forming an uneven structure as in the polymer layer is
not particularly limited. For example, the polymer layer may be
formed by forming a layer of a curable polymer composition on a
carrier substrate, and curing the layer of the curable polymer
composition in a state in which the layer of the curable polymer
composition comes in contact with a mold. FIG. 1 is a diagram
schematically showing such a method. Here, the carrier substrate
101, the layer 102 of the curable polymer composition, and the mold
103 are formed in a sequential manner. The curable polymer
composition that may be used in the method is not particularly
limited.
In the related art, various materials such as, for example, an
addition-curable silicon-based material, a condensation- or
polycondensation-curable silicon-based material, a UV-curable
silicon-based material, or a peroxide-vulcanized silicon-based
material are known as the material that can be cured to form a
polymer layer including the polyorganosiloxane, and proper types of
the materials may be chosen in consideration of processability.
In the polymer layer formed using such a method, the shape of the
convex portion is not particularly limited, and may be designed in
consideration of adhesion to the flexible substrate. FIG. 2 is a
schematic diagram showing a shape of the convex portion 1022 having
an uneven shape, that is, a region of the convex portion 1022
coming in contact with the flexible substrate. Regions indicated by
oblique lines in the drawing may come in contact with the
substrate. However, the shape of the convex portion 1022 is merely
one illustrative embodiment of the present application, and various
modifications may be made to the specific shapes of the convex
portion 1022.
Such a shape of the convex portion may be regulated to ensure
maintenance power required after contact with the flexible
substrate, or peel strength required during a peeling operation.
For example, the shape of the convex portion may be regulated so
that the contact area between the polymer layer and the substrate
is in a range of 10 to 95%, based on the total area of the polymer
layer. According to another illustrative embodiment, the contact
area may be greater than or equal to approximately 20%,
approximately 30%, approximately 40%, or approximately 45%. Also,
according to still another illustrative embodiment, the contact
area may be less than or equal to approximately 90%, approximately
85%, approximately 80%, approximately 75%, approximately 70%,
approximately 65%, or approximately 60%. When the contact area is
excessively lower than this specified range, it may be difficult to
ensure a supporting force required during an operation of preparing
or transporting an organic electronic element. On the other hand,
when the contact area is excessively greater than this specified
range, the elements may be damaged during an operation of peeling
off the substrate.
The aspect ratio of the convex portion may be adjusted to achieve
the desired effects. In the present application, the aspect ratio
of the convex portion is a ratio (W/H) of a width (W) of the convex
portion to a height (H) of the convex portion. The width (W) and
the height (H) are schematically shown in FIG. 1. In the foregoing,
the height of the convex portion may refer to a height of a region
in which the convex portion extrudes from the polymer layer, as
shown in FIG. 1. The width (W) and the height (H) may be adjusted
so that the aspect ratio (W/H) is in a range of 0.0001 to 10,000.
According to another illustrative embodiment, the aspect ratio may
be greater than or equal to approximately 0.001, approximately
0.01, approximately 0.1, approximately 1, approximately 10,
approximately 20, approximately 30, approximately 40, approximately
50, approximately 60, approximately 70, approximately 80,
approximately 90, or approximately 100. According to still another
illustrative embodiment, the aspect ratio may be less than or equal
to approximately 1,000, approximately 900, approximately 800,
approximately 700, approximately 600, approximately 500,
approximately 400, approximately 300, approximately 200, or
approximately 150. When the aspect ratio is excessively lower or
greater than this specified range, the elements may be damaged
during an operation of peeling off the substrate, or it may be
difficult to ensure a supporting force required during an operation
of preparing or transporting an organic electronic element.
After such an operation, the flexible substrate is disposed on the
polymer layer, followed by preparing an organic electronic
device.
FIG. 3 is a diagram showing that a flexible substrate 302 is
disposed on a polymer layer 301 formed as described above.
In the foregoing, the type of the substrate to be applied is not
particularly limited. For example, substrates known in the related
art to be used to realize a flexible element may be used as the
flexible substrate. Representative examples of such a substrate
include a thin-film glass film, or a polymer film. Examples of the
glass film may include a film formed of at least one selected from
the group consisting of soda lime glass,
barium/strontium-containing glass, lead glass, aluminosilicate
glass, borosilicate glass, barium borosilicate glass, and quartz,
and examples of the polymer film may include a film including at
least one selected from the group consisting of polyimide (PI),
polyethylene naphthalate (PEN), polycarbonate (PC), acrylic resin,
poly(ethylene terephthatle) (PET), poly(ether sulfide) (PES), and
polysulfone (PS), but the present application is not limited
thereto.
A light-transmitting film may be used as the substrate. In this
specification, the term "light-transmitting film" may, for example,
refer to a film having a transmittance of 50% or more, 60% or more,
70% or more, or 80% or more with respect to a portion or all of
light with a visible light range. The substrate may be a thin film
transistor (TFT) substrate including a driving TFT.
The substrate may have a refractive index of approximately 1.5 or
more, approximately 1.6 or more, approximately 1.7 or more, or
approximately 1.75 or more. Unless particularly defined otherwise
in this specification, the term "refractive index" refers to a
refractive index measured for light having a wavelength of
approximately 550 nm. When the organic electronic device is an
organic light-emitting device, this range of the refractive index
of the substrate may be desirable to enhance luminance efficiency
of the device. An upper limit of the refractive index of the
substrate is not particularly limited, and may, for example, be
approximately 2.0.
The thickness of the substrate is not particularly limited, and may
be selected within a proper range in consideration of desired
performance, for example, flexibility, light extraction efficiency,
or a barrier property. For example, the thickness of the substrate
may be in a range of approximately 10 .mu.m to approximately 50
.mu.m, or approximately 20 .mu.m to approximately 30 .mu.m.
As described above, the organic electronic element may be formed on
the substrate. FIG. 4 is a diagram schematically showing that an
organic electronic element 401 is formed on the substrate 302. In
this case, a method of forming the organic electronic element is
not particularly limited, and may be performed using methods known
in the related art. For example, the preparation method may at
least include forming a first electrode layer, an organic layer and
a second electrode layer on the substrate.
When necessary, when the flexible substrate is particularly a
polymer film, the preparation method may further include forming an
inorganic material layer on the substrate prior to formation of the
first electrode layer.
In this specification, the term "inorganic material layer" may, for
example, refer to a layer including an inorganic material at 50% by
weight or more, or 60% by weight. The inorganic material layer may
include only an inorganic material, or may include other components
such as an organic material when the inorganic material layer
includes the inorganic material within this content range. For
example, the inorganic material layer may be a barrier layer. In
this specification, the term "barrier layer" may refer to a layer
capable of preventing, inhibiting or relieving penetration of an
external factor, such as moisture or humidity, which may have a
negative influence on performance of the elements such as the
organic layer. For example, the barrier layer may be a layer having
a water vapor transmission rate (WVTR) of 10.sup.-4 g/m.sup.2/day
or less. In this specification, the WVTR may be a value which may
be measured under conditions of 40.degree. C. and 90% relative
humidity using a measuring machine (for example, PERMATRAN-W3/31,
MOCON, Inc.).
The barrier layer may be formed of a material known to be able to
relieve, prevent or inhibit penetration of external factors such as
moisture, and oxygen. Such a material may include a metal such as
In, Sn, Pb, Au, Cu, Ag, Al, Ti, and Ni; a metal oxide such as TiO,
TiO.sub.2, Ti.sub.3O.sub.3, Al.sub.2O.sub.3, MgO, SiO, SiO.sub.2,
GeO, NiO, CaO, BaO, Fe.sub.2O.sub.3, Y2O.sub.3, ZrO.sub.2,
Nb.sub.2O.sub.3, and CeO.sub.2; a metal nitride such as SiN; a
metal oxynitride such as SiON; or a metal fluoride such as
MgF.sub.2, LiF, AlF.sub.3, and CaF.sub.2, and also may include
other materials known as a moisture-absorbent material having an
absorption rate of 1% or more, or a moisture-proof material having
an absorption coefficient of 0.1% or less.
The inorganic material layer may have a single-layered structure,
or a multi-layered structure. The multi-layered structure may
include a structure in which a homogeneous or heterogeneous
inorganic material layer is stacked, or a structure in which an
inorganic material layer and an organic layer are stacked. For
example, when the multi-layered structure is formed using the
inorganic material layer as the barrier layer, all the respective
layers should not be necessarily formed of a material having a
barrier property. When the finally formed multi-layered structure
may show a desired barrier property, a portion of the multi-layered
structure may also be formed as a layer having no barrier property.
In an aspect of preventing propagation of defects such as pin holes
that may occur during formation of the inorganic material layer, it
may be desirable that the inorganic material layer has the
multi-layered structure. Also, the barrier layer having the
multi-layered structure may be desirably used to form a barrier
layer having an ensured refractive index as will be described
below.
An inorganic material layer having a small difference in refractive
index with respect to the base film may be properly used as the
inorganic material layer. For example, the absolute value of the
difference in refractive index between the inorganic material layer
and the base film may be less than or equal to approximately 1,
approximately 0.7, approximately 0.5, or approximately 0.3.
Therefore, when the base film has a high refractive index as
described above, the inorganic material layer may have a refractive
index equivalent to that of the base film. For example, the
refractive index of the inorganic material layer may be greater
than or equal to approximately 1.5, approximately 1.6,
approximately 1.7, or approximately 1.75. When the organic
electronic device is an organic light-emitting device, this range
of the refractive index of the base film may be desirable to
enhance luminance efficiency of the device. An upper limit of the
refractive index of the inorganic material layer is not
particularly limited, and may, for example, be approximately
2.0.
For example, the inorganic material layer may have a stacking
structure of a first sub-layer and a second sub-layer. The two or
more stacking structures may also be formed.
According to one illustrative embodiment, the first sub-layer may
have a first refractive index, and the second sub-layer may have a
second refractive index. When such sub-layers are stacked, it may
be desirable to adjust the refractive index of the inorganic
material layer within the above-described range while ensuring a
decoupling effect. The absolute value of the difference between the
first refractive index and the second refractive index may, for
example, be in a range of 0.1 to 1.2. The ranges of the respective
first and second refractive indexes are not particularly limited as
long as the ranges of the refractive indexes are ensured. For
example, the refractive index of the first sub-layer may be in a
range of 1.4 to 1.9, and the refractive index of the second
sub-layer may be in a range of 2.0 to 2.6. Each of the first and
second sub-layers may be a metal oxide layer. For example, a
suitable material to form the first sub-layer having such a
refractive index includes Al.sub.2O.sub.3, and the like, and a
suitable material to form the second sub-layer includes TiO.sub.2,
and the like. However, other various materials may be applied as
long as the respective first and second sub-layers have the
above-described refractive indexes, and the final stacking
structure may have a barrier property as well.
The thickness of the inorganic material layer is not particularly
limited, and may be properly selected according to a desire
purpose. For example, the thickness of the inorganic material layer
may be in a range of approximately 5 nm to approximately 60 nm, or
approximately 10 nm to approximately 55 nm. When the inorganic
material layer has a multi-layered structure, the thickness of each
sub-layer in the multi-layered structure may, for example, be in a
range of approximately 0.5 nm to approximately 10 nm, or
approximately 0.5 nm to approximately 5 nm.
The conditions used to form the inorganic material layer may be
adjusted to achieve desired performance, for example, an excellent
barrier property or refractive index. For example, the inorganic
material layer may be formed on a flat plane, for example, a plane
having a surface roughness (RMS: Root Mean Square) of 5 nm or less,
4.5 nm or less, 4.0 nm or less, 3.5 nm or less, 3.0 nm or less, 2.5
nm or less, 2.0 nm or less, 1.5 nm or less, 1.0 nm or less, or 0.5
nm or less. When the inorganic material layer is formed on such a
flat plane, film qualities of the formed layer may be further
improved. The surface roughness may be adjusted using a material
having excellent flatness per se, or may be adjusted by means of a
buffer layer to be described below. Another method of ensuring
desired performance, for example, a barrier property, is a method
of regulating a temperature during formation of the inorganic
material layer. In general, the inorganic material layer may be
formed using a physical or chemical vapor deposition method. In
this operation, when a deposition temperature may be regulated to a
high temperature, for example, a temperature of 200.degree. C. or
higher, an excellent barrier property may be ensured.
The inorganic material layer may be formed using a deposition
method such as physical vapor deposition (PVD) such as sputtering,
pulsed laser deposition (PLD), electron beam evaporation, thermal
evaporation, or laser molecular beam epitaxy (L-MBE), or chemical
vapor deposition (CVD) such as metal organic chemical vapor
deposition (MOCVD), hydride vapor phase epitaxy (HVPE), initiated
chemical vapor deposition (iCVD), plasma enhanced chemical vapor
deposition (PECVD), or atomic layer deposition (ALD). In the
deposition methods, a proper method may be selected according to a
material used so as to maximize the performance of the inorganic
material layer.
The first and second electrode layers formed on the substrate may
be transparent electrode layers, or reflexive electrode layers. For
example, one of the first and second electrode layers may be formed
as the transparent electrode layer, and the other electrode layer
may be formed as the reflexive electrode layer. The transparent and
reflexive electrode layers may be hole-injecting or
electron-injecting electrode layers generally used in the organic
electronic device. One of the transparent and reflexive electrode
layers may be formed as the hole-injecting electrode layer, and the
other electrode layer may be formed as the electron-injecting
electrode layer.
For example, the hole-injecting electrode layer may be formed using
a material having a relatively high work function, and may be
optionally formed using a transparent or reflective material. For
example, the hole-injecting electrode layer may include a metal
having a work function of approximately 4.0 eV or more, an alloy,
an electroconductive compound, or a mixture of two or more thereof.
Examples of such a material may include a metal such as gold, CuI,
an oxide material such as indium tin oxide (ITO), indium zinc oxide
(IZO), zinc tin oxide (ZTO), aluminum- or indium-doped zinc oxide,
magnesium indium oxide, nickel tungsten oxide, ZnO, SnO.sub.2, or
In.sub.2O.sub.3, a metal nitride such as gallium nitride, a metal
selenide such as zinc selenide, or a metal sulfide such as zinc
sulfide. Also, the transparent hole-injecting electrode layer may
be formed using a stack of a metal thin film, such as Au, Ag, or
Cu, and a high-refractive transparent material such as ZnS,
TiO.sub.2, or ITO.
The hole-injecting electrode layer may be formed using any means
such as deposition, sputtering, chemical vapor deposition, or an
electrochemical means. Also, the optionally formed electrode layer
may be patterned by a known method such as photolithography, or a
method using a shadow mask, and the like.
For example, the electron-injecting electrode layer may be formed
using a material having a relatively low work function, and may,
for example, be formed using a proper transparent or reflective
material among the materials used to form the hole-injecting
electrode layer, but the present application is not limited
thereto. The electron-injecting electrode layer may also be formed
using a method such as, for example, deposition, or sputtering, and
may be properly patterned, when necessary.
The electrode layer may, for example, be formed so that the
electrode layer has a thickness of approximately 90 nm to 200 nm,
90 nm to 180 nm, or approximately 90 nm to 150 nm.
An organic layer is formed between the transparent and reflexive
electrode layers. According to one illustrative embodiment of the
present application, the organic layer may include at least two
light-emitting units. In such a configuration, light generated at
the light-emitting units may be reflected by the reflexive
electrode layer, and then emitted through the transparent electrode
layer.
The organic layer may include at least one light-emitting unit.
When necessary, the organic layer may include two light-emitting
units, that is, a first light-emitting unit having a first emissive
peak wavelength, and a second light-emitting unit having a second
emissive peak wavelength, and may optionally include three or more
light-emitting units. In the foregoing, the first emissive peak
wavelength may appear within a different range than the second
emissive peak wavelength. For example, the first emissive peak
wavelength may be longer than the second emissive peak wavelength.
For example, a ratio (.lamda..sub.1/.lamda..sub.2) of the first
emissive peak wavelength (.lamda..sub.1) to the second emissive
peak wavelength (.lamda..sub.2) may be in a range of 1.1 to 2.
Within this range, desired colors may be realized by combining
kinds of light emitted at the respective light-emitting units.
According to another illustrative embodiment, the ratio
(.lamda..sub.1/.lamda..sub.2) may be greater than or equal to 1.2,
1.3, or 1.4. According to still another illustrative embodiment,
the ratio (.lamda..sub.1/.lamda..sub.2) may also be less than or
equal to 1.9, or 1.85. The distance between the respective
light-emitting units and the reflexive electrode layer may be
adjusted in consideration of light extraction efficiency. For
example, the ratio (L.sub.1/L.sub.2) of the distance (L.sub.1)
between the first light-emitting units and the reflexive electrode
layer (for example, the reflexive electrode layer) to the distance
(L.sub.2) between the second light-emitting units and the reflexive
electrode layer may be in a range of approximately 1.5 to 20.
According to another illustrative embodiment, the ratio
(L.sub.1/L.sub.2) may be greater than or equal to approximately 2,
or approximately 2.5. According to still another illustrative
embodiment, the ratio (L.sub.1/L.sub.2) may also be less than or
equal to approximately 15. For example, the organic layer including
the respective light-emitting units, which have the adjusted
distances and emissive peak wavelengths as described above, may be
formed on a portion of the substrate having the above-described
haze value to improve light extraction efficiency of the organic
electronic device.
A specific range of the distance of the emissive peak wavelength of
each light-emitting unit and the reflexive electrode layer is not
particularly limited as long as the distance is adjusted to satisfy
the ratio (L.sub.1/L.sub.2). For example, the first emissive peak
wavelength may be in a range of approximately 500 to 700 nm, and
the second emissive peak wavelength may be in a range of
approximately 380 to 500 nm. Also, the distance between the first
light-emitting unit and the reflexive electrode layer may be in a
range of 150 nm to 200 nm, and the distance between the second
light-emitting unit and the reflexive electrode layer may be in a
range of 20 nm to 80 nm.
For proper light emission, an intermediate electrode layer or a
charge generating layer may be present between the first
light-emitting unit and the second light-emitting unit. Therefore,
the organic layer may have a structure in which the light-emitting
units are divided by an intermediate electrode layer or a charge
generating layer (CGL) which has charge generating
characteristics.
A material used to constitute each of the light-emitting units is
not particularly limited. Fluorescent or phosphorescent organic
materials having various emissive peak wavelengths are known in the
related art. A proper material may be selected from the known
materials to form the light-emitting unit. Examples of the material
of each of the light-emitting units may include an Alq-based
material such as tris(4-methyl-8-quinolinolate)aluminum (III)
(Alg3), 4-MAlq3, or Gaq3, a cyclopenadiene derivative such as
C-545T(C.sub.26H.sub.26N.sub.2O.sub.2S), DSA-amine, TBSA, BTP,
PAP-NPA, spiro-FPA, Ph.sub.3Si(PhTDAOXD), or
1,2,3,4,5-pentaphenyl-1,3-cyclopentadiene (PPCP),
4,4'-bis(2,2'-diphenylyinyl)-1,1'-biphenyl (DPVBi), distyryl
benzene or a derivative thereof,
4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7,-tetramethyljulolidyl-9-enyl-
)-4H-pyran (DCJTB), DDP, AAAP, NPAMLI; or a phosphorescent material
such as Firpic, m-Firpic, N-Firpic, bon.sub.2Ir(acac),
(C.sub.6).sub.2Ir(acac), bt.sub.2Ir(acac), dp.sub.2Ir(acac),
bzq.sub.2Ir(acac), bo.sub.2Ir(acac), F.sub.2Ir(bpy),
F.sub.2Ir(acac), op.sub.2Ir(acac), ppy.sub.2Ir(acac),
tpy.sub.2Ir(acac),
FIrppy(fac-tris[2-(4,5'-difluorophenyl)pyridine-C'2,N]iridium
(III)), or
Btp.sub.2Ir(acac)(bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')
iridium(acetylactonate)), but the present application is not
limited thereto. Each of the light-emitting units may have a
host-dopant system which include a host as the above-described
material, and also include perylene, distyrylbiphenyl, DPT,
quinacridone, rubrene, BTX, ABTX, or DCJTB as a dopant.
Also, each of the light-emitting units may be formed properly using
a kind of an electron-accepting or electron-donating organic
compound exhibiting light emission characteristics as will be
described below.
The organic layer may be formed in various structures which further
includes other various functional layers known in the related art
as long as the organic layer includes the light-emitting units.
Examples of the layer that may be included in the organic layer may
include an electron injection layer, a hole blocking layer, an
electron transport layer, a hole transport layer, and a hole
injection layer.
For example, an electron-accepting organic compound may be used for
the electron injection layer or the electron transport layer. In
the foregoing, any of known compounds may be used as the
electron-accepting organic compound without particular limitation.
Examples of such an organic compound may include a polycyclic
compound or a derivative thereof such as p-terphenyl, or
quaterphenyl; a polycyclic hydrocarbon compound or a derivative
thereof such as naphthalene, tetracene, pyrene, coronene, chrysene,
anthracene, diphenylanthracene, naphthacene, or phenanthrene; or a
heterocyclic compound or a derivative thereof such as
phenanthroline, bathophenanthroline, phenanthridine, acridine,
quinoline, quinoxaline, or phenazine. Also, fluoroceine, perylene,
phthaloperylene, naphthaloperylene, perynone, phthaloperynone,
naphthaloperynone, diphenylbutadiene, tetraphenyl butadiene,
oxadiazole, aldazine, bisbenzoxazoline, bisstyryl, pyrazine,
cyclopentadiene, oxine, aminoquinoline, imine, diphenylethylene,
vinylanthracene, diaminocarbazole, pyrane, thiopyrane, polymethine,
merocyanine, quinacridone, or rubrene, or derivatives thereof;
metal chelate complex compounds disclosed in Japanese Patent
Laid-open Publication No. 1988-295695, Japanese Patent Laid-open
Publication No. 1996-22557, Japanese Patent Laid-open Publication
No. 1996-81472, Japanese Patent Laid-open Publication No.
1993-009470, or Japanese Patent Laid-open Publication No.
1993-017764, for example, metal complexes, which include as a
ligand at least one metal chelating oxanoid compound selected from
the group consisting of 8-quinolinolato compounds such as
tris(8-quinolinolato)aluminum, bis(8-quinolinolato)magnesium,
bis[benzo(f)-8-quinolinolato]zinc,
bis(2-methyl-8-quinolinolato)aluminum, tris(8-quinolinolato)indium,
tris(5-methyl-8-quinolinolato)aluminum, 8-quinolinolatolithium,
tris(5-chloro-8-quinolinolato)gallium,
bis(5-chloro-8-quinolinolato)calcium, or derivatives thereof;
oxadiazole compounds disclosed in Japanese Patent Laid-open
Publication No. 1993-202011, Japanese Patent Laid-open Publication
No. 1995-179394, Japanese Patent Laid-open Publication No.
1995-278124, or Japanese Patent Laid-open Publication No.
1995-228579; triazine compounds disclosed in Japanese Patent
Laid-open Publication No. 1995-157473; stilbene derivatives or
distyrylarylene derivatives disclosed in Japanese Patent Laid-open
Publication No. 1994-203963; styryl derivatives disclosed in
Japanese Patent Laid-open Publication No. 1994-132080, or Japanese
Patent Laid-open Publication No. 1994-88072; diolefin derivatives
disclosed in Japanese Patent Laid-open Publication No. 1994-100857,
or Japanese Patent Laid-open Publication No. 1994-207170; a
fluorescence brightening agent such as a benzooxazole compound, a
benzothiazole compound, or a benzoimidazole compound; a
distyrylbenzene compound such as 1,4-bis(2-methylstyryl)benzene,
1,4-bis(3-methylstyryl)benzene, 1,4-bis(4-methylstyryl)benzene,
distyrylbenzene, 1,4-bis(2-ethylstyryl)benzyl,
1,4-bis(3-ethylstyryl)benzene,
1,4-bis(2-methylstyryl)-2-methylbenzene, or
1,4-bis(2-methylstyryl)-2-ethylbenzene; a distyrylpyrazine compound
such as 2,5-bis(4-methylstyryl)pyrazine,
2,5-bis(4-ethylstyryl)pyrazine,
2,5-bis[2-(1-naphthyl)vinyl]pyrazine,
2,5-bis(4-methoxystyryl)pyrazine,
2,5-bis[2-(4-biphenyl)vinyl]pyrazine, or
2,5-bis[2-(1-pyrenyl)vinyl]pyrazine; a dimethylidine compound a
derivative thereof such as 1,4-phenylenedimethylidine,
4,4'-phenylenedimethylidine, 2,5-xylenedimethylidine,
2,6-naphthylenedimethylidine, 1,4-biphenylenedimethylidine,
1,4-para-terephenylenedimethylidene,
9,10-anthracenediyldimethylidine,
4,4'-(2,2-di-t-butylphenylvinyl)biphenyl, or
4,4'-(2,2-diphenylvinyl)biphenyl; silanamine derivatives disclosed
in Japanese Patent Laid-open Publication No. 1994-49079, or
Japanese Patent Laid-open Publication No. 1994-293778;
multifunctional styryl compounds disclosed in Japanese Patent
Laid-open Publication No. 1994-279322, or Japanese Patent Laid-open
Publication No. 1994-279323; oxadiazole derivatives disclosed in
Japanese Patent Laid-open Publication No. 1994-107648, or Japanese
Patent Laid-open Publication No. 1994-092947; anthracene compounds
disclosed in Japanese Patent Laid-open Publication No. 1994-206865;
oxynate derivatives disclosed in Japanese Patent Laid-open
Publication No. 1994-145146; tetraphenyl butadiene compounds
disclosed in Japanese Patent Laid-open Publication No. 1992-96990;
trifunctional organic compounds disclosed in Japanese Patent
Laid-open Publication No. 1991-296595; coumarin derivatives
disclosed in Japanese Patent Laid-open Publication No. 1990-191694;
perylene derivatives disclosed in Japanese Patent Laid-open
Publication No. 1990-196885; naphthalene derivatives disclosed in
Japanese Patent Laid-open Publication No. 1990-255789;
phthaloperynone derivatives disclosed in Japanese Patent Laid-open
Publication No. 1990-289676, or Japanese Patent Laid-open
Publication No. 1990-88689; or styrylamine derivatives disclosed in
Japanese Patent Laid-open Publication No. 1990-250292 may also be
used as the electron-accepting organic compound included in the
low-refractive index layer. In the foregoing, the electron
injection layer may, for example, be formed using a material such
as LiF, or CsF.
The hole blocking layer is a layer which prevents injected holes
from entering the electron-injecting electrode layer via the
light-emitting units so as to improve the lifespan and efficiency
of the elements. When necessary, the hole blocking layer may be
formed at a proper position between the light-emitting units and
the electron-injecting electrode layer using a known material.
For example, the hole injection layer or hole transport layer may
include an electron-donating organic compound. Representative
examples of the electron-donating organic compound may include aryl
amine compounds such as N,N',N'-tetraphenyl-4,4'-diaminophenyl,
N,N'-diphenyl-N,N'-di(3-methylphenyl)-4,4'-diaminobiphenyl,
2,2-bis(4-di-p-tolylaminophenyl)propane,
N,N,N',N'-tetra-p-tolyl-4,4'-diaminobiphenyl,
bis(4-di-p-tolylaminophenyl)phenylmethane,
N,N'-diphenyl-N,N'-di(4-methoxyphenyl)-4,4'-diaminobiphenyl,
N,N,N',N'-tetraphenyl-4,4'-diaminodiphenylether,
4,4'-bis(diphenylamino)quadriphenyl,
4-N,N-diphenylamino-(2-diphenylvinyl)benzene,
3-methoxy-4'-N,N-diphenylaminostyrylbenzene, N-phenylcarbazole,
1,1-bis(4-di-p-triaminophenyl)cyclohexane,
1,1-bis(4-di-p-triaminophenyl)-4-phenylcyclohexane,
bis(4-dimethylamino-2-methylphenyl)phenylmethane,
N,N,N-tri(p-tolyl)amine,
4-(di-p-tolylamino)-4'-[4-(di-p-tolylamino)styryl]stilbene,
N,N,N',N'-tetraphenyl-4,4'-diaminobiphenyl N-phenylcarbazole,
4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl,
4,4''-bis[N-(1-naphthyl)-N-phenylamino]p-terphenyl,
4,4'-bis[N-(2-naphthyl)-N-phenylamino]biphenyl,
4,4'-bis[N-(3-acenaphthenyl)-N-phenylamino]biphenyl,
1,5-bis[N-(1-naphthyl)-N-phenylamino]naphthalene,
4,4'-bis[N-(9-anthryl)-N-phenylamino]biphenylphenylamino]biphenyl,
4,4''-bis[N-(1-anthryl)-N-phenylamino]-p-terphenyl,
4,4'-bis[N-(2-phenanthryl)-N-phenylamino]biphenyl,
4,4'-bis[N-(8-fluoranthenyl)-N-phenyl amino]biphenyl,
4,4'-bis[N-(2-pyrenyl)-N-phenylamino]biphenyl,
4,4'-bis[N-(2-perylenyl)-N-phenylamino]biphenyl,
4,4'-bis[N-(1-coronenyl)-N-phenylamino]biphenyl,
2,6-bis(di-p-tolylamino)naphthalene,
2,6-bis[di-(1-naphthyl)amino]naphthalene,
2,6-bis[N-(1-naphthyl)-N-(2-naphthyl)amino]naphthalene,
4,4''-bis[N,N-di(2-naphthyl)amino]terphenyl,
4,4'-bis{N-phenyl-N-[4-(1-naphthyl)phenyl]amino}biphenyl,
4,4'-bis[N-phenyl-N-(2-pyrenyl)amino]biphenyl,
2,6-bis[N,N-di-(2-naphthyl)amino]fluorine,
4,4''-bis(N,N-di-p-tolylamino)terphenyl, and
bis(N-1-naphthyl)(N-2-naphthyl)amine, but the present application
is not limited thereto.
The hole injection layer or the hole transport layer may be formed
by dispersing an organic compound in a polymer, or may also be
formed using a polymer derived from the organic compound. Also,
n-conjugated polymers such as polyparaphenylene vinylene, and
derivatives thereof; hole-transporting non-conjugated polymers such
as poly(N-vinylcarbazole); or .sigma.-conjugated polymers such as
polysilane may be used.
The hole injection layer may be formed using a metal phthalocyanine
such as copper phthalocyanine, or electrically conductive polymers
such as non-metal phthalocyanine, carbon membrane, and polyaniline,
or may also be formed by reacting the aryl amine compound as an
oxidizing agent with a Lewis acid.
A specific structure of the organic layer is not particularly
limited. Various materials for forming the hole- or
electron-injecting electrode layer and the organic layer, for
example, the light-emitting unit, the electron injection or
transport layer, and the hole injection or transport layer, and
methods of forming the layers are known in the related art. In this
case, all the methods as described above may be applied to the
preparation of the organic electronic device.
After such first and second electrode layers and organic layer are
at least formed, when necessary, the organic electronic element may
be formed on the substrate by encapsulating the formed elements
with a proper encapsulation material to protect the elements.
As described above, in the present application, the structure and
material of the organic electronic element formed on the flexible
substrate, and the method of forming the organic electronic element
are not limited to the foregoing, and may also be applied to other
known contents.
After such an operation, when necessary, an operation of peeling
off the flexible substrate, and the organic electronic element
formed on the flexible substrate from the polymer layer may be
further performed. In the present application, the flexible
substrate may be formed on the polymer layer having the controlled
shape as described above, and thus the substrate may be easily
peeled from the carrier substrate without performing an additional
operation, for example, an operation of removing an edge or
adhesive component like a conventional technique.
Another aspect of the present application provides an organic
electronic device. The organic electronic device according to one
illustrative embodiment of the present application may be prepared
using the above-described method. Therefore, the organic electronic
device may include a carrier substrate; a polymer layer formed on
the carrier substrate and having a convex portion and a concave
portion formed in a surface thereof; a flexible substrate coming in
contact with the convex portion of the polymer layer; and an
organic electronic element formed on a top surface of the flexible
substrate.
The specific contents of the organic electronic device may be
applied in the same manner as described above.
Therefore, in the foregoing the polymer layer may include a
polyorganosiloxane, for example, a polyorganosiloxane including a
repeating unit represented by Formula 1.
In the foregoing, the contact ratio between the polymer layer and
the flexible substrate, or the aspect ratio of the polymer layer
may also be controlled within the above-described ranges.
Still another aspect of the present application provides a use of
the organic electronic device, for example, an organic
light-emitting device. For example, the organic light-emitting
device may be effectively applied to backlights for liquid crystal
display devices (LCDs), lightings, light sources for various
sensors, printers or photocopiers, light sources for dashboards in
vehicles, traffic lights, pilot lamps, light sources for display
devices or planar light-emitting bodies, displays, decorations, or
various lights. Yet another aspect of the present application
provides a lighting device including the OLED. When the OLED is
applied to the lighting device or other applications, the other
parts constituting the lighting device, or a method of constituting
the lighting device are not particularly limited. When the OLED is
used, all the materials and methods known in the related art are
applicable to the OLED.
Effect
The present application provides a method of preparing an organic
electronic device, an organic electronic device prepared using the
same, and a use thereof. In the present application, for example,
the method of preparing an organic electronic device effectively
using the flexible substrate, and the organic electronic device
prepared using the same, and the use thereof may be provided.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a diagram showing a method of forming a polymer layer
having a convex portion on a carrier substrate according to one
illustrative embodiment of the present application.
FIG. 2 is a diagram showing a configuration of the convex portion
formed on the polymer layer according to one illustrative
embodiment of the present application.
FIGS. 3 and 4 are diagrams showing a method of preparing an organic
electronic device on the polymer layer according to one
illustrative embodiment of the present application.
DETAILED DESCRIPTION OF EMBODIMENTS
Hereinafter, referring to Examples, illustrative embodiments of the
present application will be described in detail; however, the
present application is not limited to the embodiments disclosed
below.
Example 1
A polymer layer including polydimethylsiloxane was formed on a
glass substrate that was a carrier substrate. Specifically, first
of all, a layer 102 of an addition-curable silicon material capable
of forming the polydimethylsiloxane was coated onto a carrier
substrate 101, and a mold 103 was formed on the layer 102 of the
addition-curable silicon material according to a desired shape, and
the layer 102 of the addition-curable silicon material was then
cured to form a polymer layer, as shown in FIG. 1. A convex portion
(1022 in FIG. 2) of the polymer layer formed in this operation has
a shape as shown in FIG. 2. In this case, the convex portion was
formed so that an aspect ratio (W/H) of the convex portion was
averagely in a range of approximately 10 to 20, a height (H) of the
convex portion was averagely in a range of approximately 100 nm,
and a contact area of the polymer layer with respect to a flexible
substrate to be attached is in a range of approximately 30%, based
on the total area of the polymer layer.
Next, a thin-film glass was disposed on the convex portion of the
polymer layer to prepare an organic electronic element. In the
foregoing, the preparation of the organic electronic element was
performed using a known method. The organic electronic element was
prepared by sequentially forming a hole-injecting transparent
electrode layer, a hole transport layer, a first light-emitting
unit having an emission wavelength ranging from approximately 380
to 500 nm, an n-type organic semiconductor layer, a p-type organic
semiconductor layer, a second light-emitting unit having an
emission wavelength ranging from approximately 500 to 700 nm, a
hole blocking layer, an electron transport layer, an electron
injection layer, and an electron-injecting reflexive electrode
layer on the thin-film glass using the known materials, and the
organic electronic device was prepared by encapsulating the organic
electronic element with a proper encapsulation material. After
preparation of the organic electronic device, the thin-film glass
was peeled from the polymer layer. In this operation, the thin-film
glass was easily peeled, and any damage of the organic electronic
element was not observed during this operation.
EXPLANATION OF THE MARKS IN THE DRAWINGS
101: the carrier substrate, and the mold 102: the layer of the
curable polymer composition 103: the mold 301: the polymer layer
302: the flexible substrate 401: the organic electronic element
* * * * *