U.S. patent application number 17/313491 was filed with the patent office on 2021-08-19 for substrate processing apparatus.
This patent application is currently assigned to KOKUSAI ELECTRIC CORPORATION. The applicant listed for this patent is KOKUSAI ELECTRIC CORPORATION. Invention is credited to Takayuki NAKADA, Kenji SHIRAKO, Tomoshi TANIYAMA.
Application Number | 20210254211 17/313491 |
Document ID | / |
Family ID | 1000005568387 |
Filed Date | 2021-08-19 |
United States Patent
Application |
20210254211 |
Kind Code |
A1 |
NAKADA; Takayuki ; et
al. |
August 19, 2021 |
SUBSTRATE PROCESSING APPARATUS
Abstract
A substrate processing apparatus including a transfer chamber;
upper gas supply mechanism that supplies a gas into an upper region
of the transfer chamber through a first gas supply port; and lower
gas supply mechanism that supplies the gas into a lower region of
the transfer chamber through a second gas supply port. The upper
gas supply mechanism includes a first buffer chamber disposed at a
back surface of the first gas supply port; a pair of upper ducts
disposed at both sides of the first buffer chamber; and a first
ventilation unit disposed at lower ends of the pair of upper ducts.
The lower gas supply mechanism includes a second buffer chamber
disposed at a back surface of the second gas supply port; a lower
duct disposed at lower surface of the second buffer chamber; and a
second ventilation unit disposed at a lower end of the lower
duct.
Inventors: |
NAKADA; Takayuki;
(Toyama-shi, JP) ; TANIYAMA; Tomoshi; (Toyama-shi,
JP) ; SHIRAKO; Kenji; (Toyama-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
KOKUSAI ELECTRIC CORPORATION |
Tokyo |
|
JP |
|
|
Assignee: |
KOKUSAI ELECTRIC
CORPORATION
Tokyo
JP
|
Family ID: |
1000005568387 |
Appl. No.: |
17/313491 |
Filed: |
May 6, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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16729692 |
Dec 30, 2019 |
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17313491 |
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15422018 |
Feb 1, 2017 |
10550468 |
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16729692 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/02271 20130101;
H01L 21/67303 20130101; C23C 16/455 20130101; H01L 21/67109
20130101; C23C 16/54 20130101; H01L 21/67772 20130101; C23C 16/402
20130101; H01L 21/02164 20130101; C23C 16/4401 20130101; H01L
21/67017 20130101; H01L 21/67201 20130101 |
International
Class: |
C23C 16/455 20060101
C23C016/455; H01L 21/67 20060101 H01L021/67; H01L 21/673 20060101
H01L021/673; H01L 21/677 20060101 H01L021/677; C23C 16/54 20060101
C23C016/54; C23C 16/40 20060101 C23C016/40; C23C 16/44 20060101
C23C016/44; H01L 21/02 20060101 H01L021/02 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 2, 2016 |
JP |
2016-017990 |
Claims
1. A substrate processing apparatus comprising: a standby chamber
where a substrate stands by; an upper gas supply mechanism
configured to supply a gas into an upper region of the standby
chamber through a first gas supply port; a side exhaust unit
configured to exhaust the gas from the upper region of the standby
chamber; a lower gas supply mechanism configured to supply the gas
into a lower region of the standby chamber through a second gas
supply port; and a lower exhaust unit configured to exhaust the gas
from the lower region of the standby chamber, wherein a side flow
is formed at the upper region of the standby chamber by exhausting,
from the side exhaust unit, the gas supplied from the first gas
supply port of the upper gas supply mechanism, and a down flow is
formed at the lower region of the standby chamber by exhausting,
from the lower exhaust unit, the gas supplied from the second gas
supply port of the lower gas supply mechanism.
2. The substrate processing apparatus of claim 1, further
comprising a substrate retainer configured to support the
substrate, wherein, in a state where the substrate retainer stands
by in the standby chamber, the upper region of the standby chamber
serves as a substrate region where the substrate supported by the
substrate retainer is disposed, and the lower region of the standby
chamber serves as a heat insulating region of the substrate
retainer.
3. The substrate processing apparatus of claim 1, wherein the side
exhaust unit is disposed at a side facing the upper gas supply
mechanism, and the upper region of the standby chamber includes an
upper exhaust port and a lower exhaust port at an upper and a lower
portions of the upper region, respectively.
4. The substrate processing apparatus of claim 1, wherein the upper
gas supply mechanism comprises: a first buffer chamber disposed
adjacent to the first gas supply port; an upper duct disposed
adjacent to the first buffer chamber; and a first gas supply unit
configured to supply the gas to the first buffer chamber through
the upper duct.
5. The substrate processing apparatus of claim 4, wherein the upper
duct is disposed at a side surface of the first buffer chamber.
6. The substrate processing apparatus of claim 4, wherein the first
supply unit is disposed at a lower end of the upper duct to
correspond to the upper duct.
7. The substrate processing apparatus of claim 1, wherein the lower
gas supply mechanism comprises a second buffer chamber disposed at
a back surface of the second gas supply port; a lower duct disposed
at a lower surface of the second buffer chamber; and a second gas
supply unit configured to supply the gas to the second buffer
chamber through the lower duct.
8. The substrate processing apparatus of claim 7, wherein the lower
gas supply mechanism is further configured to exhaust the gas in
the lower region of the standby chamber from the lower exhaust unit
by the second gas supply unit.
9. The substrate processing apparatus of claim 8, wherein the lower
exhaust unit is disposed where the gas is prone to remain
stagnant.
10. The substrate processing apparatus of claim 7, wherein the
second gas supply unit is disposed at a lower end of the lower
duct.
11. The substrate processing apparatus of claim 1, further
comprising: a first gas supply unit configured to inhale the gas
exhausted from the side exhaust unit and exhale the gas to be
supplied to the first gas supply port; and a second gas supply unit
configured to inhale the gas exhausted from the lower exhaust unit
and exhale the gas to be supplied to the second gas supply
port.
12. The substrate processing apparatus of claim 11, wherein a first
flow path extending from the first gas supply unit to the first gas
supply port is formed at the upper gas supply mechanism, a second
flow path extending from the second gas supply unit to the second
gas supply port is formed at the lower gas supply mechanism, and
the first flow path and the second flow path are installed
separately from each other.
13. The substrate processing apparatus of claim 11, further
comprising: a first circulation path at least comprising a flow
path extending to the second gas supply unit and the side exhaust
unit; and a second circulation path at least comprising a flow path
extending to the second gas supply unit and the lower exhaust unit,
wherein at least a portion of the first circulation path and a
portion of the second circulation path partially converge.
14. The substrate processing apparatus of claim 13, wherein a
cooling unit is installed at a flow path where the first
circulation path and the second circulation path converge, and a
gas flowing through the first circulation path and a gas flowing
through the second circulation path are cooled by the cooling unit
and supplied thereafter to the first gas supply unit and the second
gas supply unit, respectively.
15. A method for manufacturing a semiconductor device, comprising:
(a) placing a substrate in a standby state in a standby chamber;
(b) processing the substrate in a process chamber; (c) transferring
the substrate between the process chamber and the standby chamber;
(d) forming a side flow in an upper region of the standby chamber
by exhausting a gas therefrom, while the gas is being supplied to
the upper region of the standby chamber; (e) forming a down flow in
a lower region of the standby chamber by exhausting the gas
therefrom along a lower surface of the lower region of the standby
chamber, while the gas is being supplied to the lower region of the
standby chamber.
16. A non-transitory computer-readable recording medium storing a
program used for a substrate processing apparatus comprising a
standby chamber where a substrate stands by, an upper gas supply
mechanism configured to supply a gas into an upper region of the
standby chamber through a first gas supply port, a side exhaust
unit configured to exhaust the gas from the upper region of the
standby chamber, a lower gas supply mechanism configured to supply
the gas into a lower region of the standby chamber through a second
gas supply port, and a lower exhaust unit configured to exhaust the
gas from the lower region of the standby chamber, wherein the
program causes the substrate processing apparatus to perform: (a)
placing the substrate in a standby state in the standby chamber;
(b) processing the substrate in a process chamber; (c) transferring
the substrate between the process chamber and the standby chamber;
(d) forming a side flow in an upper region of the standby chamber
by exhausting the gas therefrom, while the gas is being supplied to
the upper region of the standby chamber; (e) forming a down flow in
a lower region of the standby chamber by exhausting the gas
therefrom along a lower surface of the lower region of the standby
chamber, while the gas is being supplied to the lower region of the
standby chamber.
Description
CROSS-REFERENCE TO RELATED PATENT APPLICATION
[0001] This non-provisional U.S. patent application is a
continuation of U.S. patent application Ser. No. 16/729,692, filed
Dec. 30, 2019, which is a continuation of U.S. patent application
Ser. No. 15/422,018, filed Feb. 1, 2017, which issued as U.S. Pat.
No. 10,550,468, all of which are incorporated by reference as if
fully set forth. This non-provisional U.S. patent application
claims priority under 35 U.S.C. .sctn. 119 of Japanese Patent
Application No. 2016-017990, filed on Feb. 2, 2016, the entire
contents of which are hereby incorporated by reference.
BACKGROUND
1. Field
[0002] The present disclosure relates to a substrate processing
apparatus.
2. Description of the Related Art
[0003] Generally, a vertical type substrate processing apparatus
used in a semiconductor device manufacturing process includes a
transfer chamber where a wafer is loaded into or unloaded from a
substrate retainer. The transfer chamber is installed under a
process chamber where the wafer is processed. A cleaning unit is
installed on one side wall of the transfer chamber. By ventilating
clean air from the cleaning unit into the transfer chamber, an air
flow is formed inside the transfer chamber.
[0004] However, it is difficult to miniaturize the substrate
processing apparatus according to the above-described conventional
configuration of the transfer chamber.
SUMMARY
[0005] Described herein is a technique capable of downsizing a
substrate processing apparatus.
[0006] According to one aspect of the technique described herein,
there is provided a substrate processing apparatus including: a
transfer chamber where a substrate is transferred into a substrate
retainer; an upper gas supply mechanism configured to supply a gas
into an upper region of the transfer chamber through a first gas
supply port; and a lower gas supply mechanism disposed under the
upper gas supply mechanism and configured to supply the gas into a
lower region of the transfer chamber through a second gas supply
port, wherein the upper gas supply mechanism includes: a first
buffer chamber disposed at a back surface of the first gas supply
port; a pair of upper ducts disposed at both sides of the first
buffer chamber; and a first ventilation unit disposed at lower ends
of the pair of upper ducts, and the lower gas supply mechanism
includes: a second buffer chamber disposed at a back surface of the
second gas supply port; a lower ducts disposed at lower surface of
the second buffer chamber; and a second ventilation unit disposed
at a lower end of the lower duct.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] FIG. 1 is a schematic diagram illustrating a perspective
view of a substrate processing apparatus according to a first
embodiment described herein.
[0008] FIG. 2 is a vertical cross-sectional view of a processing
furnace used in the substrate processing apparatus according to the
first embodiment described herein.
[0009] FIG. 3 is a diagram exemplifying a vertical cross-section of
a transfer chamber of the substrate processing apparatus and a gas
flow in the transfer chamber of the substrate processing apparatus
according to the first embodiment described herein.
[0010] FIG. 4A is a diagram illustrating a gas supply mechanism of
the transfer chamber of the substrate processing apparatus
according to the first embodiment described herein, and FIG. 4B is
a diagram illustrating a side surface of the gas supply
mechanism.
[0011] FIG. 5 is a diagram schematically illustrating a
cross-section taken along the line a-a in FIG. 3.
[0012] FIG. 6 is a diagram schematically illustrating a
cross-section taken along the line c-c in FIG. 3.
[0013] FIG. 7 is a perspective view of a cleaning unit according to
the first embodiment described herein.
[0014] FIG. 8A is a diagram illustrating the gas flow in a first
cleaning unit, and FIG. 8B is a diagram illustrating the gas flow
in a second cleaning unit.
[0015] FIG. 9 is a diagram illustrating a gas dispersion unit
according to a second embodiment described herein.
[0016] FIG. 10 is a view exemplarily showing a configuration in
which the gas dispersion unit is provided to a cleaning unit
according to the second embodiment described herein.
[0017] FIG. 11 is a diagram showing a conventional
configuration.
DETAILED DESCRIPTION
First Embodiment
[0018] Hereinafter, a first embodiment will be described with
reference to FIGS. 1 and 2.
[0019] (1) Configuration of Substrate Processing Apparatus
[0020] As shown in FIG. 1, a substrate processing apparatus 10
includes a housing 12 in which a processing furnace 40 is disposed.
A pod stage 18 is disposed on the front side of the housing 12. A
front opening unified pod (FOUP) 16 (pod), which is a substrate
accommodating mechanism for accommodating a wafer (substrate) 14,
is loaded on and unloaded from the pod stage 18 by an external
transfer device (not shown).
[0021] A pod transfer device 20, a pod shelf 22 and a pod opener 24
are disposed at positions facing the pod stage 18 on the front side
in the housing 12. The pod transfer device 20 is configured to
transport the pod 16 among the pod stage 18, the pod shelf 22 and
the pod opener 24. The pod shelf 22 is provided with shelf plates
in multiple stages to support a plurality of pods 16.
[0022] A substrate transfer chamber 80 and a transfer chamber 50
are disposed so as to be closer to the rear side of the inside of
the housing 12 than the pod opener 24. The detailed configuration
of the transfer chamber 50 will be described later.
[0023] A substrate transfer device 28, which is a substrate
transfer mechanism, is disposed in the substrate transfer chamber
80. A boat 30 serving as a substrate retainer is disposed in the
transfer chamber 50. The substrate transfer device 28 has an arm 32
(tweezer) that can carry out the wafer 14. The substrate transfer
device 28 transfers the wafer 14 between the pod 16 mounted on the
pod opener 24 and the boat 30 by rotating and moving up and down
the arm 32. The boat 30 supports a plurality of (for example, about
25 to about 150) wafers 14 in a horizontal manner in multiple
stages. A heat insulating unit 75 is provided under the boat 30.
The heat insulating unit 75 is made of a heat resistant material
having a heat insulating effect such as quartz and and silicon
carbide (SiC). The heat insulating unit 75 includes, for example, a
heat insulating plate 74. The heat insulating unit 75 may include a
heat insulating cylinder (not shown), which is a cylindrical
member, instead of the heat insulating plate 74. The boat 30 and
the heat insulating unit 75 are moved up and down by a boat
elevator 34 which is a lift mechanism.
[0024] The processing furnace 40 is disposed on the upper portion
of the back side of the housing 12, that is, above the transfer
chamber 50. The boat 30 is loaded into the processing furnace 40
from below the processing furnace 40.
[0025] A wafer loading/unloading port 51 is installed on the
ceiling of the transfer chamber 50 and communicates with a process
chamber 42. The wafer loading/unloading port 51 has a shape and a
size facilitating the boat 30 to pass.
[0026] <Processing Furnace>
[0027] As shown in FIG. 2, the processing furnace 40 includes a
substantially cylindrical reaction tube 41. The reaction tube 41 is
made of a non-metallic material resistant to heat such as quartz
(SiO.sub.2) and silicon carbide (SiC). The reaction tube 41 has a
closed upper end and an open lower end.
[0028] The process chamber 42 is disposed inside the reaction tube
41. The boat 30 accommodated in the process chamber 42 is rotated
with the plurality of wafers 14 loaded therein by rotating a rotary
shaft 44 by a rotating mechanism 43.
[0029] The reaction tube 41 and a manifold 45 under the reaction
tube 41 are concentrically arranged. The manifold 45 is made of a
metallic material such as stainless steel and is cylindrical. The
manifold 45 supports the lower end of the reaction tube 41
vertically. The lower end of the manifold 45 may be hermetically
sealed by a seal cap 46 or a shutter 64. A sealing member 46a such
as an O-ring that hermetically seals the inside of the process
chamber 42 is provided on the upper surface of the seal cap 46 and
the shutter 64. A gas introduction pipe 47 for introducing a gas
such as a process gas and a purge gas into the process chamber 42
and an exhaust pipe 48 for exhausting the gas in the process
chamber 42 are connected to the manifold 45.
[0030] A mass flow rate controller (MFC) (not shown), which is a
flow rate controller (flow rate control unit) for controlling the
flow rate of the process gas, and a valve serving as an on/off
valve are connected to the gas introduction pipe 47 from the
upstream side to the downstream side of the gas introduction pipe
47. The nozzle is connected to the front end of the gas
introduction pipe 47. The process gas is supplied into the process
chamber 42 via the MFC, the valve and the nozzle.
[0031] The exhaust pipe 48 is connected to a vacuum pump which is
an exhaust device through a pressure sensor (not shown) which is a
pressure detector (pressure detecting unit) for detecting the inner
pressure of the process chamber 42 and an APC (Automatic Pressure
Controller) valve which is a pressure regulator.
[0032] The heater unit 49 serving as the heating means (heating
mechanism) is disposed concentrically with the reaction tube 41 on
the outer periphery of the reaction tube 41.
[0033] A temperature sensor (not shown), which is a temperature
detector, is installed in the reaction tube 41. The inner
temperature of the process chamber 42 is adjusted to a desired
temperature distribution by adjusting the state of power supplied
to the heater 49 based on the temperature information detected by
the temperature sensor.
[0034] The controller 121 is connected to and controls the rotating
mechanism 43, the boat elevator 34, the MFC, the valve, the APC
valve and the gas supply mechanism. The controller 121 is embodied
by a microprocessor (computer) having a CPU, for example, and is
configured to control the operation of the substrate processing
apparatus 10. For example, an input/output device 122 such as a
touch panel is connected to the controller 121.
[0035] A memory unit 123, which is a storage medium, is connected
to the controller 121. A control program for controlling the
operation of the substrate processing apparatus 10 or a program
(also referred to as a recipe) for each component of the substrate
processing apparatus 10 to perform the processing of the substrate
according to processing conditions is readably stored in the memory
unit 123.
[0036] The memory unit 123 may include a storage device (a hard
disk or a flash memory) built in the controller 121 and may also
include a portable external storage device (magnetic tape, magnetic
disks such as flexible disk and hard disks, optical disks such as
CD and DVD, magneto-optical disks such as MO, and semiconductor
memory such as USB memories and memory cards). The program may be
provided to the computer using a communication means such as the
Internet and a dedicated line. The program can be read from the
memory unit 123 by an instruction such as an instruction from the
input/output device 122 when necessary. By performing processes
according to the read recipe by the controller 121, each component
of the substrate processing apparatus 10 executes desired
processing under the control of the controller 121.
[0037] (2) Substrate Processing Step
[0038] Next, a process (film forming process) for forming a film on
a substrate, which is one of semiconductor device manufacturing
processes, using the substrate processing apparatus 10 according to
the first embodiment will be described. According to the first
embodiment, a silicon oxide (SiO.sub.2) film is formed on the wafer
14 by supplying DCS (SiH.sub.2Cl.sub.2: dichlorosilane) gas as a
source gas andO.sub.02 (oxygen) gas as a reactive gas to the wafer
14. Hereinafter, the controller 121 controls the components that
constitute the substrate processing apparatus 10.
[0039] The substrate transfer device 28 unloads the wafer 14 from
the pod 16 and transfers the wafer to the boat 30 (wafer charging).
At this time, a gas supply mechanism described later supplies a gas
into the transfer chamber 50.
[0040] <Loading Step>
[0041] Thereafter, the shutter 64 for closing the wafer
loading/unloading port 51 at the lower portion of the process
chamber 42 is retreated to the receiving portion 65 for
accommodating the shutter 64 to open the wafer loading/unloading
port 51.
[0042] Subsequently, the boat 30 is lifted from the transfer
chamber 50 by the boat elevator into the process chamber 42 (boat
loading). The seal cap 46 seals the lower end of the manifold 45
via the sealing member 46a.
[0043] <Processing Step>
[0044] The inside atmosphere of the process chamber 42 is exhausted
through the exhaust pipe 48 and the inner pressure of the process
chamber 42 is adjusted to a desired pressure (degree of vacuum).
The boat 30 is rotated by the rotating mechanism 43 while the
inside of the process chamber 42 is heated by the heater unit 49.
The DCS gas and the 02 gas are supplied into the process chamber 42
through the gas introduction pipe 47. A SiO.sub.2 film is then
formed on the surface of the wafer 14 (film forming process).
[0045] After the film forming process is performed, an inert gas is
supplied into the process chamber 42 so that the internal
atmosphere of the process chamber 42 is replaced with the inert gas
and the inner pressure of the process chamber 42 is returned to
atmospheric pressure.
[0046] <Unloading Step>
[0047] The seal cap 46 is lowered by the boat elevator 34 and the
lower end of the manifold 45 is opened. The boat 30 is then
unloaded from the process chamber 42 through the lower end of the
manifold 45 (Boat Unloading). Thereafter, the shutter 64 closes the
wafer loading/unloading port 51 of the process chamber 42. The gas
supply mechanism supplies a gas into the transfer chamber 50 and
the boat 30 is in standby at a predetermined location in the
transfer chamber 50 until the wafer 14 supported by the boat 30 is
cooled.
[0048] <Transfer Step>
[0049] When the wafer 14 in the boat 30 in standby is cooled to a
predetermined temperature (for example, about room temperature),
the wafer 14 is unloaded from the boat 30 by the substrate transfer
device 28 and transferred to the pod 16 (Wafer discharging). At
this time, the gas supply mechanism continuously supplies the gas
into the transfer chamber 50.
[0050] As described above, a series of substrate processing
operations of the substrate processing apparatus 10 according to
the first embodiment is completed.
[0051] (3) Configuration of the Transfer Chamber
[0052] Next, the configuration of the transfer chamber 50 according
to the first embodiment will be described with reference to FIGS. 3
through 6.
[0053] <Transfer Chamber>
[0054] As shown in FIG. 3, the transfer chamber 50 has a
rectangular shape defined by a ceiling, a floor and side walls.
However, the shape of the transfer chamber 50 is not limited to the
rectangular shape but may be polygonal (e.g., triangular,
pentagonal and the like). The components such as a load lock
chamber and a nitrogen purge box may not be installed in the
transfer chamber 50. The inside of the transfer chamber 50 may be
atmospheric.
[0055] A substrate region in the transfer chamber 50 where the
wafer 14 (or the boat 30) is in standby is referred to as an upper
region 60. A heat insulating region where the heat insulating unit
75 is located is referred to as a lower region 61.
[0056] <Gas Supply Mechanism>
[0057] The cleaning unit, which is a gas supply mechanism, is
installed on one side (side wall) of the transfer chamber 50. The
cleaning unit is divided into an upper cleaning unit 52a (upper gas
supply mechanism) and a lower cleaning unit 52b (lower gas supply
mechanism). The upper cleaning unit 52a and the lower cleaning unit
52b are arranged vertically adjacent to each other. A first
circulation path 81 and a second circulation path 82, which will be
described later, are formed in the transfer chamber 50.
[0058] The upper cleaning unit 52a is configured to supply gas to
the upper region 60. The lower cleaning unit 52b is configured to
supply gas to the lower region 61.
[0059] In the first embodiment, a gas such as an inert gas is used
as a clean air. However, an external atmosphere may be used as the
clean gas. Even when an external atmosphere is used, the external
atmosphere may be filtered by filter units 59a and 59b, which are
described later, to be used as a clean atmosphere (clean air).
Hereinafter, the term "gas supply mechanism" may refer to one of
the upper cleaning unit 52a and the lower cleaning unit 52b, or may
refer to both of the upper cleaning unit 52a and the lower cleaning
unit 52b.
[0060] <Upper Cleaning Unit>
[0061] As shown in 4A, the upper cleaning unit 52a includes, from
the upstream side to the downstream side of the gas flow, a fan 56a
(first fan) which is a ventilation unit for ventilating gas, a duct
90c (first duct) which forms a part of a gas path, a buffer area
58a (first buffer chamber) which is a diffusion space of the gas,
the filter unit 59a and a gas supply port 67a. According to the
first embodiment, as shown in FIG. 4B, a plurality of fans 56a, for
example, two fans 56a are installed. The duct 90c is the gas path
for guiding the gas ventilated by the fan 56a from the side of the
buffer region 58a toward the inside of the buffer region 58a. As
illustrated in FIG. 4A, two ducts 90c are provided to correspond to
the pair of fans 56a. The buffer region 58a communicates with the
duct 90c and is a diffusion space for uniformly supplying the gas
to the upper region 60. The filter unit 59a is configured to remove
particles contained in the gas.
[0062] As shown in FIGS. 4A and 4B, the duct 90c extends to the
upper end of the upper cleaning unit 52a in the vertical direction
along both left and right sides of the buffer area 58a. The duct
90c is configured to supply gas from both sides of the buffer
region 58a into the buffer region 58a. By supplying gas from both
sides of the buffer region 58a as described above, it is possible
to prevent a deviation in supply of gas in the buffer region 58a.
The fan 56a is installed at the lower end of the upper cleaning
unit 52a. The cross-section of the duct 90c gradually narrows until
a predetermined location (the boundary between the buffer area 58a
and the buffer area 58b) and has a constant width from the
predetermined location toward the upper portion. The gas flow
speeds up in the portion of the duct 90c with constant width (along
the side of the buffer area 58a). Therefore, the gas may flow to
the buffer area 58a (an upper end of the first duct 90c). As a
result, a sufficient amount of gas can be supplied to the upper
portion.
[0063] <Lower Cleaning Unit>
[0064] The lower cleaning unit 52b includes, from the upstream side
to the downstream side of the gas flow, a fan 56b (second fan)
which is a ventilation unit for ventilating gas, a duct 90e (second
duct) which forms a part of a gas path for guiding the gas
ventilated by the fan 56b to a buffer area 58b, the buffer area 58b
(second buffer chamber) which communicates with the duct 90e and is
a diffusion space of the gas in order to supply the gas uniformly,
the filter unit 59b for removing particles contained in the gas and
a gas supply port 67b for injecting the gas passed through the
filter unit 50b into the lower portion 61. The duct 90e is a space
formed under the buffer region 58b and is configured to supply gas
from the lower surface of the buffer region 58b toward the inside
of the buffer region 58b. The duct 90e has a funnel shaped vertical
cross-section. The cross-section of the duct 90e gradually widens
from the fan 56b toward the bottom surface (communication portion)
of the second buffer chamber 58b. The fan 56b is installed adjacent
to the lower end of the lower cleaning unit 52b between the two
fans 56a of the upper cleaning unit 52a. That is, the two fans 56a
of the upper cleaning unit 52a are installed on both sides of the
fan 56b of the lower cleaning unit 52b.
[0065] Thus, the gas supply mechanism is vertically divided at the
boundary between the upper region 60 and the lower region 61, and
each divided structure has independent gas path. The first buffer
chamber 58a is larger than the second buffer chamber 58b. Such
configuration allows forming different gas flows in the upper
region 60 and the lower region 61, or supplying the gas at
different flow rates or flow rates. In the first embodiment, the
filter units 59a and 59b are may include, for example, two layers
of a chemical and PTFE.
[0066] <Exhaust Unit>
[0067] As shown in FIG. 3, a side exhaust unit is installed to face
the upper cleaning unit 52a. The side exhaust unit includes an
upper exhaust port 53a which is a first exhaust port and a lower
exhaust port 53b which is a second exhaust port, which will be
described later. The side exhaust unit may further include an
exhaust duct 90a, a first radiator 100a, an exhaust duct 90b and a
second radiator 100b. The gas supplied to the upper region 60
through the upper cleaning unit 52a cools and purges the inside of
the upper region 60 and is exhausted through the exhaust units 53a
and 53b.
[0068] The exhaust port 53a is provided at a portion of a side
surface facing the upper cleaning unit 52a and the boat 30
interposed therebetween corresponding to the upper portion of the
upper region 60. In the first embodiment, the boat elevator 34
extending vertically is installed at a side where the exhaust port
53a is installed. The gas exhausted through the first exhaust port
53a flows in the duct 90a. The duct 90a is narrowed starting from
the second exhaust port 53b. The gas is cooled while passing
through the radiator 100a in the duct 90a and flows through the
duct 90a at one side of the second exhaust port 53b down to and the
lower portion of the transfer chamber 50.
[0069] The exhaust port 53b is provided at a portion of a side
surface facing the upper cleaning unit 52a and the boat 30
interposed therebetween corresponding to the lower portion of the
upper region 60. The gas exhausted through the exhaust port 53b
flows in the duct 90b. The gas is cooled while passing through the
radiator 100b in the duct 90b and converged with the gas exhausted
through the duct 90a in the lower portion of the transfer chamber
50. The converged gas is also converged with the exhaust gas from
the lower region 61, which will be described later. By providing
the two exhaust ports 53a and 53b in the upper region 60 as
described above, the gas supplied to the upper region 60 can be
promptly exhausted.
[0070] Next, the exhaust in the lower region 61 will be described.
As shown in FIGS. 3 and 6, a bottom exhaust unit 68 is provided
below the front and rear portion of lower regions 61 about the boat
30 when viewed from above. The bottom exhaust unit 68 has a front
exhaust port 68a (third exhaust) and a rear exhaust port 68b
(fourth exhaust). The exhaust ports 68a and 68b are rectangular in
shape along the corner portions of the bottom portion of the
transfer chamber 50. The gas supplied to the lower region 61
through the lower cleaning unit 52b cools and purges the inside of
the lower region 61 and is exhausted through the exhaust unit 68.
The gas exhausted through the exhaust unit 68 is cooled by the
third radiator 100c and the fourth radiator 100d provided under the
front exhaust port 68a and the rear exhaust port 68b in the duct
90f, and flows through the duct 90f and is exhausted to the lower
portion of the transfer chamber 50. The gas exhausted through the
lower region 61 is converged with the exhaust gas passing through
the ducts 90a and 90b of the upper region 60 at the lower portion
of the transfer chamber 50. The converged gas is cooled again by
the fifth radiator 100e. Next, the gas is ventilated back to the
upper cleaning unit 52a and the lower cleaning unit 52b to be
re-supplied to the upper region 60 and the lower region 61.
[0071] <Circulation Path>
[0072] The gas exhausted from the inside of the transfer chamber 50
is supplied back into the transfer chamber 50 via the first
circulation path 81 indicated by the solid line arrow and the
second circulation path 82 indicated by the broken line arrow. The
first circulation path 81 is a gas path for supplying the gas
exhausted from the upper region 60 through the exhaust port 53a and
the exhaust port 53b back into the upper region 60 via the upper
cleaning unit 52a. The second circulation path 82 is a gas path for
supplying the gas exhausted from the lower region 61 through the
front exhaust port 68a and the rear exhaust port 68b back into the
lower region 61 through the lower cleaning unit 52b. Hereinafter,
the term circulation path may refer to one of the first circulation
path 81 and the second circulation path 82 or may refer to both of
the first circulation path 81 and the second circulation path
82.
[0073] The first circulation path 81 is constituted by ducts 90a,
90b, 90c and 90d. The duct 90a is a path communicating the exhaust
port 53a and the duct 90d. The radiator 100a is installed inside
the duct 90a. The duct 90b is a path communicating the exhaust port
53b and the duct 90d. The radiator 100b is installed in the duct
90b. The first circulation path 81 may further include an upper
cleaning unit 52a and the side exhaust unit.
[0074] The second circulation path 82 is constituted by ducts 90f
and 90e. The duct 90f is a path communicating with the exhaust
ports 68a and 68b and the duct 90d. The radiators 100c and 100d are
installed in the duct 90f The duct 90d is a space at the lower
portion of the transfer chamber 50. The second circulation path 82
may further include a lower cleaning unit 52b and the bottom
exhaust unit 68.
[0075] The first circulation path 81 and the second circulation
path 82 partially converges in the duct 90d. That is, the first
circulation path 81 and the second circulation path 82 partially
share a common path (confluence path). That is, the duct 90d
communicates with the duct 90a and the duct 90b and also
communicates with the cleaning unit 52a and the cleaning unit 52b.
In a portion other than the duct 90d, the second circulation path
82 is a gas path independent of the first circulation path 81. The
total length of the path along the second circulation path 82 is
shorter than the total length of the path along the first
circulation path 81.
[0076] As shown in FIG. 3, a radiator 100e, which is a cooling unit
for cooling the gas, is disposed in the duct 90d. The two fans 56a
and 56b are provided at the communicating unit of the cleaning
units 52a and 52b, i.e. at the lower ends of the cleaning units 52a
and 52b which are also the end portion of the duct 90d. By
adjusting the outputs of the fans 56a and 56b, the flow rate or the
flow velocity of the gas supplied to each cleaning unit can be
adjusted.
[0077] A gas damper (not shown) may be installed in the first
circulation path 81 and the second circulation path 82. The gas
damper is configured to adjust the flow rate of gas flowing through
the first circulation path 81 and the second circulation path 82.
For example, the gas damper may be embodied using known flow
control mechanisms such as butterfly valves and needle mechanisms.
The gas damper is capable of automatically controlling the flow
rate, and is preferably configured to perform the interlocking
control with the fans 56a and 56b.
Comparative Example
[0078] Here, the configuration of a conventional transfer chamber,
which is a comparative example, will be described with reference to
FIG. 11.
[0079] According to the configuration of the conventional cleaning
unit, the fan 200 is installed on the back surface of the filter
201. According to the configuration of the conventional transfer
chamber, the cleaning unit is disposed on one side of the transfer
chamber, and a circulation path is disposed on the lower portion of
the transfer chamber. According to this configuration, a large area
for disposing the cleaning unit is required at one side in the
transfer chamber. Therefore, it is difficult to miniaturize the
substrate processing apparatus. Since the inhaling direction of the
fan is directed toward the wall, the pressure loss is increased.
Therefore, deterioration of the performance of the cleaning unit
may occur.
[0080] In contrast, the cleaning unit according to the first
embodiment described herein has the filter disposed at the upper
portion thereof and the fan disposed at the lower portion thereof.
Therefore, the cleaning unit may be disposed on the side surface of
the transfer chamber since less space is required to dispose the
cleaning unit compared to the conventional example. In the cleaning
unit according to the first embodiment described herein, since the
inhaling direction and the exhaling direction of the fan are
orthogonal to each other, the pressure loss can be suppressed and
the performance of the cleaning unit can be improved.
[0081] <Gas Flow>
[0082] Next, the gas flow in accordance with the first embodiment
will be described in detail with reference to FIG. 3. The solid
line arrows in FIG. 3 represent the gas flow in the upper region
60, and the dashed line arrows represent the gas flow in the lower
region 61.
[0083] First, the gas flow in the upper region 60, which is the
first circulation path 81, will be described. The gas supplied to
the upper region 60 through the gas supply port 67a of the cleaning
unit 52a flows parallel to the substrate. The gas that has cooled
the wafer 14 is exhausted through the exhaust ports 53a and 53b and
flows downward in the ducts 90a and 90b. Next, the direction of the
gas flow in the communicating portion between the ducts 90a and 90b
and the duct 90d is changed from the downward direction to the
horizontal direction such that the gas flows into the duct 90d
toward the fan 56a of the cleaning unit 52a in the horizontal
direction. Thereafter, the gas is ventilated upward by the fan 56a
and flows vertically upward in the two ducts 90c. Thereafter, the
gas is diffused from both sides of the buffer region 58a into the
buffer region 58a, and then supplied back into the upper region
60.
[0084] Next, the gas flow in the lower region 61 which is the
second circulation path 82 will be described. The gas supplied to
the lower region 61 through the cleaning unit 52b flows downward in
the space between the heat insulating unit 75 and the side surface
of the transfer chamber 50. The gas that has cooled the heat
insulating unit 75 is exhausted downward through the exhaust ports
68a and 68b and flows downward in the duct 90f to converge with the
gas flowing along the first circulation path 81. Thereafter, the
gas is ventilated upward by the fan 56b and flows vertically upward
in the duct 90e. Thereafter, the gas is diffused into the buffer
region 58b through the duct 90e and the lower surface of the buffer
region 58b, and is supplied back into the lower region 61.
[0085] <Shutter Exhaust Unit>
[0086] As shown in FIG. 5, an exhaust port 76 is provided on the
side surface of the receiving portion 65, and the gas supplied into
the receiving portion 65 is exhausted through the exhaust port 76.
A third circulation path 83 for the receiving portion 65 is thereby
formed. The third circulation path 83 is configured to exhaust the
gas supplied in the vicinity of the wafer loading/unloading port 51
and the receiving portion 65 through the exhaust port 76. A gas
flow passing through the region above the upper region 60 is formed
by the third circulation path 83. As shown in FIG. 5, the third
circulation path 83 is indicated by a portion of the solid line
arrows which is the path of the first circulation path 81. That is,
the third circulation path 83 is formed by branching from the first
circulation path 81.
[0087] By inhaling the gas supplied into the upper region 60
through the exhaust port 76, the periphery of the wafer
loading/unloading port 51 and the inside of the receiving portion
65 are purged. The receiving portion 65 protrudes from the transfer
chamber 50 at the upper end of the side surface of thereof.
According to the first embodiment, the receiving portion 65 is
polygonal (for example, rectangular) with one of the angles of a
polygon curved when viewed from above. A straight portion and a
curved portion are provided at one side of the receiving portion
65. A plurality of exhaust ports 76 are provided along the straight
portion and the curved portion. The exhaust ports 76 are provided
in the same number in the straight portion and the curved portion,
for example, two in each. The exhaust port 76 of the curved portion
is deflected toward the straight portion. That is, the exhaust port
76 of the curved portion is disposed closer to the straight portion
and spaced apart from the exhaust port 53a.
[0088] The circulation path 83 for cyclically exhausting the
receiving portion 65 is constituted by ducts 90a, 90c and 90g. The
duct 90g communicates with the duct 90a and is a space provided on
the back surface of the exhaust port 76. The downstream side of the
duct 90a of the circulation path 83 is shared with the first
circulation path 81.
[0089] It is preferable that the volume of air generated by the
upper cleaning unit 52a and the lower cleaning unit 52b and the
total volume of air of the gas passing through the exhaust ports
53a and 53b and the radiators 100c and 100e are balanced. However,
since the temperature of the wafer is also changed in accordance
with the processing in the process chamber 42, the volume of air
can be appropriately determined.
[0090] <Effects of the First Embodiment>
[0091] According to the first embodiment, there is one or more of
the effects described below.
[0092] (a) By installing the ventilation unit below the filter
rather than behind the filter (i.e., the lower end portion of the
gas supply mechanism), the size of the housing of the gas supply
mechanism may be reduced. Therefore, the footprint of the entire
substrate processing apparatus may be reduced. (b) By arranging the
ventilation unit at the lower end of the cleaning unit, the
exhaling direction of the ventilation unit can be directed toward
the inside of the transfer chamber. Therefore, the pressure loss of
the gas flow in the circulation path or the stagnation of the gas
flow can be reduced. Further, since the ventilation unit can be
isolated from the heat from transfer chamber, the service life of
the ventilation unit can be extended. The maintenance of the
ventilation unit and the filter may be performed through the front
side of the cleaning unit. As a result, the maintenance may be
facilitated, the time required for maintenance can be reduced and
the productivity can be improved. (c) By installing the radiator in
the vicinity of the exhaust port of each circulation path, the gas
heated in the transfer chamber can be promptly cooled. Therefore,
the flow of the gas in the circulation path can be smoothly formed,
and the stagnation of the gas can be suppressed. (d) Since the gas
passes through the two radiators in any circulation path, the
heated gas can sufficiently be cooled in the transfer chamber. The
difference in gas temperature by the circulation path can be
thereby minimized. Further, the temperature deviation of the gas
during the re-supply of the gas into the transfer chamber may be
suppressed, and the inside of the transfer chamber can be uniformly
cooled. (e) The upper region can be efficiently purged by disposing
the upper and lower exhaust units in the upper and lower portions
thereof. By cooling the substrate using the exhaust unit provided
in the upper portion of the upper region, the hot air of the
ascending air current generated by the heated gas or the particles
in the opening portion of the furnace can be promptly exhausted.
The heated gas or the particles in the driving portion of the boat
elevator may be promptly exhausted by cooling the substrate using
the exhaust unit provided in the lower portion of the upper region.
(f) By providing the exhaust unit in the lower region at two
locations in front and rear, the atmosphere in the lower region
which is higher in temperature than the upper region can be
forcibly exhausted downward. Therefore, the generation of the
upward flow in the lower region may be suppressed. Further, the
heat from the heat insulating unit having a high heat capacity can
be prevented from being conducted into the substrate region such
that the time required for cooling the substrate may be reduced. By
suppressing the particles from moving upward due to the upward flow
of the heat, the adhesion of the particles to the substrate can
also be suppressed. Further, by providing the rectangular exhaust
unit along the corner portions of the lower portion where gas
stagnation is likely to occur, the lower portion can be promptly
exhausted. (g) By providing the exhaust unit in the upper region on
the side facing the gas supply mechanism and installing the exhaust
unit in the lower region at the bottom portion of the transfer
chamber, a downflow can be formed in the lower region and a side
flow in the upper region. (h) The length of the total path of the
circulation path of the lower region is shorter than the length of
the total path of the circulation path of the upper region.
Therefore, the circulation cycle of the gas supplied to the lower
region can be shortened to improve the cooling efficiency of the
heat insulating unit. (i) A balanced flow can be formed by
balancing the total volume of the exhausted air by exhaust units
and the total volume of air by the gas supply mechanism. (i) By
regulating the outputs of the fan of the upper cleaning unit and
the fan of the lower cleaning unit, the flow rate of the gas
supplied by each gas supply mechanism can be adjusted.
Second Embodiment
[0093] Next, the second embodiment will be described
hereinafter.
[0094] As shown in FIGS. 9 and 10, according to the second
embodiment described herein, the gas dispersion unit 57 is
installed in front of the cleaning unit 52. According to the
configuration of the second embodiment described herein, the range
of the gas supplied may be broadened as compared to the
configuration of the first embodiment shown in FIGS. 7, 8A, and 8B.
The gas dispersion unit 57 has a buffer region 58c as a third
buffer region provided therein, a communicating unit 69
communicating with the cleaning unit 52, center panels 57a and 57b
and side panels 57c and 57d having gas supply ports. The center
panel 57a has a height substantially equal to the gas supply port
67a of the upper cleaning unit 52a and has a width substantially
the same as the transfer chamber 50. The side panels 57c are
provided at both sides of the center panel 57a. In accordance with
the embodiment shown in FIG. 9, the width of the center panel 57a
is substantially equal to the gas supply port 67a, and the width of
the side panels 57c is substantially equal to the duct 90c. A
plurality of gas supply ports are disposed in each of the center
panel 57a and the side panels 57c. Each of the center panel 57a and
the side panels 57c may include a punched panel. The center panel
57b and the side panels 57d may be configured similar to the center
panel 57a and the side panel 57c, respectively. The gas supplied
through the cleaning unit is diffused in the buffer region 58c and
then supplied into the transfer chamber 50 through the plurality of
ports.
[0095] The gas is directly supplied from the gas supply port of the
cleaning unit 52 toward the center panel 57a. Therefore, by
adjusting the opening ratio of the center panel 57a, the amount of
gas supplied through the center panel 57a may be smaller than the
amount of gas supplied through the gas supply port of the cleaning
unit 52. As a result, the diffusion of the gas into the buffer
region 58c may be facilitated. More specifically, by making the
opening ratios of the plurality of gas supply ports of the center
panel 57a different from the opening ratio of the plurality of gas
supply ports of the side panels 57c, i.e. by making the opening
ratio of the side panels 57c greater than the opening ratio of the
center panel 57a, the diffusion of the gas through the side panel
57c can be promoted. The volume of air through the gas dispersion
unit 57 may be maintained at uniform level throughout the entire
surface of the gas dispersion unit 57.
[0096] As described above, the second embodiment in which the gas
dispersion unit 57 is provided at the front side of both the upper
cleaning unit 52a and the lower cleaning unit 52b. However,
according to the second embodiment, the gas dispersion unit 57 may
be installed only at one of the upper cleaning unit 52a and the
lower cleaning unit 52b. The gas dispersion unit 57 may have a
larger surface area (preferably the same width as the wafer 14,
more preferably substantially the same width as the transfer
chamber 50) than the filter surface of the cleaning unit 52. The
opening ratio of the panel of the gas dispersion unit provided in
the upper cleaning unit 52a may be different from the opening ratio
of the panel of the gas dispersion unit provided in the lower
cleaning unit. The width of the panel of the gas dispersion unit 57
provided in the upper cleaning unit 52a may be different from the
width of the panel 57 provided in the lower cleaning unit 52b. The
area of the center panel 57a of the gas dispersion unit 57 provided
in the upper cleaning unit 52a may be smaller than the area of the
center panel 57b of the gas dispersion unit 57 provided in the
lower cleaning unit 52b.
[0097] <Effects of the Second Embodiment>
[0098] According to the second embodiment, there is one or more of
the effects described below. (a) By installing the gas dispersion
unit, the area (gas ejection area) of the gas supply port can be
adjusted, and the gas can be uniformly supplied even to the corner
of the transfer chamber. (b) By providing the buffer chamber in the
gas dispersion unit, the gas can be diffused in the buffer chamber
at once even when the area of the gas supply ports of the gas
dispersion unit is larger than the area of the gas supply port of
the gas supply mechanism. Therefore, the gas can be supplied
through the entire surface of the gas supply hole of the gas
dispersion unit. (c) By constituting the gas dispersion unit using
a punched panel and changing the opening ratios of the portion
facing the gas supply port of the gas supply mechanism and portions
other than the portion facing the gas supply port, the flow rate
(air flow rate) can be provided even in the expanded portion and
the gas can be supplied from the entire front surface of the gas
dispersion unit at the same flow rate (volume of air).
Other Embodiments
[0099] Next, another embodiment described herein will be
described.
[0100] In addition to the embodiments described above, the
techniques described herein may be embodied in various forms
without departing from the spirit of the technique.
[0101] According to the technique described herein, the substrate
processing apparatus can be miniaturized.
* * * * *