U.S. patent application number 17/234670 was filed with the patent office on 2021-08-05 for organic light emitting diode display.
The applicant listed for this patent is SAMSUNG DISPLAY CO., LTD.. Invention is credited to Se-Ho Kim, Won-Se Lee, Jin-Woo Park.
Application Number | 20210242296 17/234670 |
Document ID | / |
Family ID | 1000005525009 |
Filed Date | 2021-08-05 |
United States Patent
Application |
20210242296 |
Kind Code |
A1 |
Kim; Se-Ho ; et al. |
August 5, 2021 |
ORGANIC LIGHT EMITTING DIODE DISPLAY
Abstract
An organic light emitting diode display includes a substrate, a
scan line on the substrate for transferring a scan signal, a data
line crossing the scan line and for transferring a data signal, a
driving voltage line crossing the scan line and for transferring a
driving voltage, a switching thin film transistor coupled to the
scan line and the data line, a driving thin film transistor coupled
to a switching drain electrode of the switching thin film
transistor, and an organic light emitting diode (OLED) coupled to a
driving drain electrode of the driving thin film transistor,
wherein a driving semiconductor layer of the driving thin film
transistor is bent and in a plane substantially parallel to the
substrate.
Inventors: |
Kim; Se-Ho; (Yongin-si,
KR) ; Park; Jin-Woo; (Yongin-si, KR) ; Lee;
Won-Se; (Yongin-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG DISPLAY CO., LTD. |
Yongin-si |
|
KR |
|
|
Family ID: |
1000005525009 |
Appl. No.: |
17/234670 |
Filed: |
April 19, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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16984045 |
Aug 3, 2020 |
10985234 |
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17234670 |
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16659372 |
Oct 21, 2019 |
10734470 |
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16984045 |
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16261450 |
Jan 29, 2019 |
10483342 |
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16659372 |
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15900715 |
Feb 20, 2018 |
10204976 |
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16261450 |
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15603309 |
May 23, 2017 |
9899464 |
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15900715 |
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15238449 |
Aug 16, 2016 |
9660012 |
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15603309 |
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13952508 |
Jul 26, 2013 |
9450040 |
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15238449 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/3258 20130101;
H01L 27/124 20130101; H01L 27/1255 20130101; H01L 27/3248 20130101;
H01L 27/3276 20130101; G09G 3/3225 20130101; H01L 27/3265 20130101;
G09G 2300/0809 20130101; H01L 27/3262 20130101 |
International
Class: |
H01L 27/32 20060101
H01L027/32 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 2, 2012 |
KR |
10-2012-0084976 |
Claims
1. An organic light emitting diode display comprising: a substrate;
a first scan line and a data line on the substrate; a first thin
film transistor coupled to the first scan line and the data line; a
first voltage line; a second voltage line; an organic light
emitting diode; a second thin film transistor utilizing a
semiconductor layer, the second thin film transistor being
electrically coupled to the first voltage line, the organic light
emitting diode, and the first thin film transistor; a third thin
film transistor electrically coupled to the first voltage line, the
second thin film transistor, and the first scan line; an insulating
layer covering the second thin film transistor; a storage capacitor
comprising: a first capacitor plate comprising a portion of a gate
electrode of the second thin film transistor; a second capacitor
plate over the first capacitor plate; and a portion of the
insulating layer between the first capacitor plate and the second
capacitor plate; and a connection member, wherein the insulating
layer has a first contact opening and a second contact opening, the
first contact opening exposing the first capacitor plate and being
offset from the second capacitor plate, the second contact opening
exposing a portion of a drain electrode of the third thin film
transistor; and wherein the connection member is electrically
coupled to the third thin film transistor and the first capacitor
plate through the first contact opening and the second contact
opening.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. patent
application Ser. No. 16/984,045, filed Aug. 3, 2020, which is a
continuation of U.S. patent application Ser. No. 16/659,372, filed
Oct. 21, 2019, now U.S. Pat. No. 10,734,470, which is a
continuation of U.S. patent application Ser. No. 16/261,450, filed
Jan. 29, 2019, now U.S. Pat. No. 10,483,342, which is a
continuation of U.S. patent application Ser. No. 15/900,715, filed
Feb. 20, 2018, now U.S. Pat. No. 10,204,976, which is a
continuation of U.S. patent application Ser. No. 15/603,309, filed
May 23, 2017, now U.S. Pat. No. 9,899,464, which is a continuation
of U.S. patent application Ser. No. 15/238,449, filed Aug. 16,
2016, now U.S. Pat. No. 9,660,012, which is a continuation of U.S.
patent application Ser. No. 13/952,508, filed Jul. 26, 2013, now
U.S. Pat. No. 9,450,040, which claims priority to and the benefit
of Korean Patent Application No. 10-2012-0084976 filed in the
Korean Intellectual Property Office on Aug. 2, 2012, the entire
content of all of which are incorporated herein by reference.
BACKGROUND
1. Field
[0002] The described technology relates generally to an organic
light emitting diode display.
2. Description of Related Art
[0003] An organic light emitting diode display includes two
electrodes and an organic emission layer interposed therebetween,
electrons injected from one electrode and holes injected from the
other electrode are combined with each other in the organic
emission layer to form an exciton, and light is emitted while the
exciton discharges energy.
[0004] The organic light emitting diode display includes a
plurality of pixels, each including an organic light emitting diode
that is a self-light emitting element, and a plurality of thin film
transistors and capacitors for driving the organic light emitting
diode. The plurality of thin film transistors includes a switching
thin film transistor and a driving thin film transistor.
[0005] In the switching thin film transistor, a thin gate
insulating layer is formed between a gate electrode and a
semiconductor layer to enable rapid switching operation. Because
the thickness of the gate insulating layer of the driving thin film
transistor, which is formed on the same layer as the switching thin
film transistor, is reduced, a driving range of a gate voltage
applied to the gate electrode of the driving thin film transistor
becomes narrow. Therefore, it may be difficult to control the
magnitude of the gate voltage Vgs of the driving thin film
transistor to ensure a large number of gray levels.
[0006] The above information disclosed in this Background section
is only for enhancement of understanding of the background of the
described technology, and may therefore contain information that
does not form the prior art that is already known in this country
to a person of ordinary skill in the art.
SUMMARY
[0007] The described technology provides an organic light emitting
diode display broadening a driving range of a driving thin film
transistor to display a relatively large number of gray levels.
[0008] An exemplary embodiment of the present invention provides an
organic light emitting diode display including a substrate, a scan
line on the substrate for transferring a scan signal, a data line
crossing the scan line and for transferring a data signal, a
driving voltage line crossing the scan line and for transferring a
driving voltage, a switching thin film transistor coupled to the
scan line and the data line, a driving thin film transistor coupled
to a switching drain electrode of the switching thin film
transistor, and an organic light emitting diode (OLED) coupled to a
driving drain electrode of the driving thin film transistor,
wherein a driving semiconductor layer of the driving thin film
transistor is bent and in a plane substantially parallel to the
substrate.
[0009] The organic light emitting diode display may further include
a first gate insulating layer covering the driving semiconductor
layer, and a storage capacitor at the first gate insulating layer
and overlapping the driving semiconductor layer.
[0010] The storage capacitor may include a first storage capacitor
plate at the first gate insulating layer and overlapping the
driving semiconductor layer, a second gate insulating layer
covering the first storage capacitor plate, and a second storage
capacitor plate at the second gate insulating layer and overlapping
the first storage capacitor plate.
[0011] The driving semiconductor layer may include a plurality of
bent portions.
[0012] The driving semiconductor layer may include a plurality of
first extension portions extending in a first direction, and a
plurality of second extension portions extending in a second
direction that is different from the first direction, and wherein
the bent portions couple respective ones of the first extension
portions and the second extension portions.
[0013] The organic light emitting diode display may further include
a compensation thin film transistor coupled to the driving thin
film transistor and for compensating a threshold voltage of the
driving thin film transistor.
[0014] The driving semiconductor layer may further include branched
portions branched from the bent portions.
[0015] The storage capacitor may overlap the branched portions.
[0016] The organic light emitting diode display may further include
a light emission control line for transferring a light emission
control signal, and a light emission control thin film transistor
configured to be turned on by the light emission control signal to
transfer the driving voltage from the driving thin film transistor
to the OLED, wherein the light emission control thin film
transistor is between the driving drain electrode and the OLED.
[0017] The organic light emitting diode display may further include
a transistor connection portion for coupling a compensation source
electrode of the compensation thin film transistor to a light
emission control source electrode of the light emission control
thin film transistor, wherein the storage capacitor extends to
overlap the transistor connection portion.
[0018] The driving semiconductor layer may extend to overlap the
transistor connection portion.
[0019] The organic light emitting diode display may further include
an interlayer insulating layer on the second gate insulating layer,
wherein the transistor connection portion is at a same layer as the
data line, and is coupled through a contact hole in the interlayer
insulating layer to the compensation source electrode and the light
emission control source electrode.
[0020] The driving semiconductor layer may include a first path
semiconductor layer coupled to the compensation thin film
transistor, and a second path semiconductor layer coupled to the
light emission control thin film transistor, and a length of the
first path semiconductor layer may be smaller than a length of the
second path semiconductor layer.
[0021] The storage capacitor may overlap the first path
semiconductor layer and the second path semiconductor layer.
[0022] The organic light emitting diode display may further include
an interlayer insulating layer covering the second storage
capacitor plate, a connection member at the interlayer insulating
layer and coupled to the first storage capacitor plate through a
first contact hole in the second gate insulating layer and the
interlayer insulating layer, and a protective layer covering the
interlayer insulating layer and the connection member, wherein the
connection member is coupled to a compensation drain electrode of
the compensation thin film transistor.
[0023] The scan line is at a same layer as the first storage
capacitor plate, and the data line and the driving voltage line may
be at a same layer as the connection member.
[0024] The driving voltage line may be coupled through a second
contact hole in the interlayer insulating layer to the second
storage capacitor plate.
[0025] The organic light emitting diode display may further include
an operation control thin film transistor configured to be turned
on by the light emission control signal transferred by the light
emission control line to transfer the driving voltage to the
driving thin film transistor, wherein the operation control thin
film transistor is between the driving voltage line and a driving
source electrode of the driving thin film transistor.
[0026] The organic light emitting diode display may further include
a prior scan line for transferring a prior scan signal, an
initialization voltage line for transferring an initialization
voltage to the driving thin film transistor, and an initialization
thin film transistor configured to be turned on according to the
prior scan signal to transfer the initialization voltage to a
driving gate electrode of the driving thin film transistor, wherein
the initialization thin film transistor is between the driving gate
electrode and the initialization voltage line.
[0027] The organic light emitting diode display may further include
a bypass control line for transferring a bypass control signal, and
a bypass thin film transistor for transferring a portion of a
driving current transferred by the driving thin film transistor
according to the bypass control signal, wherein the bypass thin
film transistor is between the initialization voltage line and a
light emission control drain electrode of the light emission
control thin film transistor.
[0028] Another exemplary embodiment of the present invention
provides an organic light emitting diode display including a
substrate, a scan line on the substrate for transferring a scan
signal, an initialization voltage line on the substrate for
transferring an initialization voltage, a data line crossing the
scan line for transferring a data signal, a driving voltage line
crossing the scan line for transferring a driving voltage, a
switching thin film transistor coupled to the scan line and the
data line, a driving thin film transistor coupled to a switching
drain electrode of the switching thin film transistor, an organic
light emitting diode (OLED) coupled to a driving drain electrode of
the driving thin film transistor, a light emission control thin
film transistor between the driving drain electrode and the OLED,
and a bypass thin film transistor between the initialization
voltage line and a light emission control drain electrode of the
light emission control thin film transistor, wherein the bypass
thin film transistor transfers a portion of a driving current
transferred by the driving thin film transistor according to a
bypass control signal transferred by a bypass control line.
[0029] A driving semiconductor layer of the driving thin film
transistor is bent and in a plane substantially parallel to the
substrate.
[0030] The organic light emitting diode display may further include
a first gate insulating layer covering the driving semiconductor
layer, and a storage capacitor at the first gate insulating layer
and overlapping the driving semiconductor layer.
[0031] The storage capacitor may include a first storage capacitor
plate at the first gate insulating layer and overlapping the
driving semiconductor layer, a second gate insulating layer
covering the first storage capacitor plate, and a second storage
capacitor plate at the second gate insulating layer and overlapping
the first storage capacitor plate.
[0032] The driving semiconductor layer may include a plurality of
bent portions.
[0033] The driving semiconductor layer may include a plurality of
first extension portions extending in a first direction, and a
plurality of second extension portions extending in a second
direction that is different from the first direction. The bent
portions may couple respective ones of the first extension portions
and the second extension portions.
[0034] The organic light emitting diode display may further include
a compensation thin film transistor coupled to the driving thin
film transistor and for compensating the threshold voltage of the
driving thin film transistor.
[0035] The organic light emitting diode display may further include
an interlayer insulating layer covering the second storage
capacitor plate, a connection member at the interlayer insulating
layer and coupled to the first storage capacitor plate through a
first contact hole in the second gate insulating layer and the
interlayer insulating layer, and a protective layer covering the
interlayer insulating layer and the connection member, The
connection member may be coupled to a compensation drain electrode
of the compensation thin film transistor.
[0036] The scanline may be at a same layer as the first storage
capacitor plate, and the data line and the driving voltage line may
be at a same layer as the connection member.
[0037] The driving voltage line may be coupled to the second
storage capacitor plate through a second contact hole in the
interlayer insulating layer.
[0038] According to an exemplary embodiment of the present
invention, since a driving channel region of a driving
semiconductor layer may be longitudinally formed by forming the
driving semiconductor layer including a plurality of bent portions,
a driving range of a gate voltage applied to a driving gate
electrode may be broadened.
[0039] Therefore, since the driving range of the gate voltage is
relatively broad, a gray level of light emitted from an organic
light emitting diode (OLED) can be more precisely controlled by
adjusting the magnitude of the gate voltage, and as a result, it is
possible to increase a resolution of the organic light emitting
diode display and to improve display quality.
[0040] Further, it is possible to sufficiently ensure storage
capacitance even at a high resolution by forming a storage
capacitor overlapping the driving semiconductor layer to ensure a
region of the storage capacitor, which is reduced by the driving
semiconductor layer having the bent portion.
[0041] Further, it is possible to avoid or prevent low gray level
stains by setting a length of a first path semiconductor layer
coupled to a compensation thin film transistor to be smaller than a
length of a second path semiconductor layer coupled to a light
emission control thin film transistor.
BRIEF DESCRIPTION OF THE DRAWINGS
[0042] FIG. 1 is an equivalent circuit of one pixel of an organic
light emitting diode display according to a first exemplary
embodiment of the present invention.
[0043] FIG. 2 is a view schematically showing positions of a
plurality of thin film transistors and capacitors of the organic
light emitting diode display according to the first exemplary
embodiment.
[0044] FIG. 3 is a layout view of one pixel of the organic light
emitting diode display according to the first exemplary
embodiment.
[0045] FIG. 4 is a cross-sectional view of the organic light
emitting diode display of the first exemplary embodiment shown in
FIG. 3, which is taken along the line IV-IV.
[0046] FIG. 5 is a cross-sectional view of the organic light
emitting diode display of the first exemplary embodiment shown in
FIG. 3, which is taken along the line V-V.
[0047] FIG. 6 is an enlarged layout view of a driving thin film
transistor of an organic light emitting diode display according to
a second exemplary embodiment of the present invention.
[0048] FIG. 7 is a layout view of an organic light emitting diode
display according to a third exemplary embodiment of the present
invention.
[0049] FIG. 8 is an enlarged layout view of a driving thin film
transistor of an organic light emitting diode display according to
a fourth exemplary embodiment of the present invention.
[0050] FIG. 9 is an enlarged layout view of a driving thin film
transistor of an organic light emitting diode display according to
a fifth exemplary embodiment of the present invention.
[0051] FIG. 10 is an equivalent circuit of one pixel of an organic
light emitting diode display according to a sixth exemplary
embodiment of the present invention.
[0052] FIG. 11 is a layout view of the organic light emitting diode
display according to the sixth exemplary embodiment.
DETAILED DESCRIPTION
[0053] Hereinafter, embodiments of the present invention will be
described more fully with reference to the accompanying drawings,
in which exemplary embodiments of the invention are shown. As those
skilled in the art would realize, the described embodiments may be
modified in various ways, all without departing from the spirit or
scope of the present invention.
[0054] To describe embodiments of the present invention, portions
that do not relate to the description are omitted, and same or like
constituent elements are designated by same reference numerals
throughout the specification.
[0055] In addition, the size and thickness of each component shown
in the drawings may be arbitrarily shown for understanding and ease
of description, but the present invention is not limited thereto.
In the drawings, the thickness of layers, films, panels, regions,
areas, etc., may be exaggerated for clarity, for understanding, and
for ease of description. It will be understood that when an element
such as a layer, film, region, or substrate is referred to as being
"on" another element, it can be directly on the other element, or
intervening elements may be present.
[0056] In addition, unless explicitly described to the contrary,
the word "comprise" and variations thereof, such as "comprises" or
"comprising", will be understood to imply the inclusion of stated
elements, but not necessarily to the exclusion of other elements.
Further, in the specification, the word "on" means positioning on
or below the object portion, but does not necessarily mean
positioning on the upper side of the object portion based on a
direction of gravity.
[0057] An organic light emitting diode display according to a first
exemplary embodiment will be described in detail with reference to
FIGS. 1 to 5.
[0058] FIG. 1 is an equivalent circuit of one pixel of an organic
light emitting diode display according to a first exemplary
embodiment. As shown in FIG. 1, one pixel of the organic light
emitting diode display according to the first exemplary embodiment
includes a plurality of signal lines 121, 122, 123, 124, 171, and
172, a plurality of thin film transistors T1, T2, T3, T4, T5, and
T6, a storage capacitor Cst, and an OLED coupled to the plurality
of signal lines.
[0059] The plurality of thin film transistors includes a driving
thin film transistor T1, a switching thin film transistor T2, a
compensation thin film transistor T3, an initialization thin film
transistor T4, an operation control thin film transistor T5, and a
light emission control thin film transistor T6.
[0060] The plurality of signal lines includes a scan line 121 for
transferring a scan signal Sn, a prior scan line 122 for
transferring a prior scan signal Sn-1 to the initialization thin
film transistor T4, a light emission control line 123 for
transferring a light emission control signal En to the operation
control thin film transistor T5 and the light emission control thin
film transistor T6, a data line 171 crossing the scan line 121 and
for transferring a data signal Dm, a driving voltage line 172 for
transferring a driving voltage ELVDD and formed to be almost
parallel to the data line 171, and an initialization voltage line
124 for transferring an initialization voltage Vint for
initializing the driving thin film transistor T1.
[0061] A gate electrode G1 of the driving thin film transistor T1
is coupled to an end Cst1 of the storage capacitor Cst, a source
electrode S1 of the driving thin film transistor T1 is coupled via
the operation control thin film transistor T5 to the driving
voltage line 172, a drain electrode D1 of the driving thin film
transistor T1 is electrically coupled via the light emission
control thin film transistor T6 to an anode of the OLED. The
driving thin film transistor T1 receives the data signal Dm
according to switching operation of the switching thin film
transistor T2 to supply a driving current Id to the OLED.
[0062] A gate electrode G2 of the switching thin film transistor T2
is coupled to the scan line 121, a source electrode S2 of the
switching thin film transistor T2 is coupled to the data line 171,
a drain electrode D2 of the switching thin film transistor T2 is
coupled via the operation control thin film transistor T5 to the
driving voltage line 172 while being coupled to the source
electrode S1 of the driving thin film transistor T1. The switching
thin film transistor T2 is turned on according to the scan signal
Sn transferred through the scan line 121 to perform a switching
operation for transferring the data signal Dm transferred to the
data line 171 to the source electrode of the driving thin film
transistor T1.
[0063] A gate electrode G3 of the compensation thin film transistor
T3 is coupled to the scan line 121, a source electrode S3 of the
compensation thin film transistor T3 is coupled via the light
emission control thin film transistor T6 to the anode of the OLED
while being coupled to the drain electrode D1 of the driving thin
film transistor T1, and a drain electrode D3 of the compensation
thin film transistor T3 is coupled to an end Cst1 of the storage
capacitor Cst, a drain electrode D4 of the initialization thin film
transistor T4, and the gate electrode G1 of the driving thin film
transistor T1 together. The compensation thin film transistor T3 is
turned on according to the scan signal Sn transferred through the
scan line 121 to couple the gate electrode G1 and the drain
electrode D1 of the driving thin film transistor T1 to each other,
thus performing diode-connection of the driving thin film
transistor T1.
[0064] A gate electrode G4 of the initialization thin film
transistor T4 is coupled to the prior scan line 122, a source
electrode S4 of the initialization thin film transistor T4 is
coupled to the initialization voltage line 124, and a drain
electrode D4 of the initialization thin film transistor T4 is
coupled to the end Cst1 of the storage capacitor Cst, the drain
electrode D3 of the compensation thin film transistor T3, and the
gate electrode G1 of the driving thin film transistor T1. The
initialization thin film transistor T4 is turned on according to
the prior scan signal Sn-1 transferred through the prior scan line
122 to transfer the initialization voltage Vint to the gate
electrode G1 of the driving thin film transistor T1, thus
performing an initialization operation for initializing the voltage
of the gate electrode G1 of the driving thin film transistor
T1.
[0065] A gate electrode G5 of the operation control thin film
transistor T5 is coupled to the light emission control line 123, a
source electrode S5 of the operation control thin film transistor
T5 is coupled to the driving voltage line 172, and a drain
electrode D5 of the operation control thin film transistor T5 is
coupled to the source electrode S1 of the driving thin film
transistor T1 and the drain electrode S2 of the switching thin film
transistor T2.
[0066] A gate electrode G6 of the light emission control thin film
transistor T6 is coupled to the light emission control line 123, a
source electrode S6 of the light emission control thin film
transistor T6 is coupled to the drain electrode D1 of the driving
thin film transistor T1 and to the source electrode S3 of the
compensation thin film transistor T3, and a drain electrode D6 of
the light emission control thin film transistor T6 is electrically
coupled to the anode of the OLED. The operation control thin film
transistor T5 and the light emission control thin film transistor
T6 are concurrently (e.g., simultaneously) turned on according to
the light emission control signal En transferred through the light
emission control line 123 to transfer the driving voltage ELVDD to
the OLED, thus allowing a driving current Id to flow in the
OLED.
[0067] Another end Cst2 of the storage capacitor Cst is coupled to
the driving voltage line 172, and a cathode of the OLED is coupled
to a common voltage ELVSS. Accordingly, the OLED receives the
driving current Id from the driving thin film transistor T1 to emit
light, thereby displaying an image.
[0068] Hereinafter, operation of one pixel of the organic light
emitting diode display according to the first exemplary embodiment
will be described in detail.
[0069] First, a prior scan signal Sn-1 of a low level is supplied
through the prior scan line 122 during an initialization period.
Then, the initialization thin film transistor T4 is turned on
corresponding to the prior scan signal Sn-1 of a low level, and the
initialization voltage Vint is provided from the initialization
voltage line 124 through the initialization thin film transistor T4
to the gate electrode G1 of the driving thin film transistor T1 to
initialize the driving thin film transistor T1 with the
initialization voltage Vint.
[0070] Subsequently, a low level scan signal Sn is supplied through
the scan line 121 during a data programming period. Then, the
switching thin film transistor T2 and the compensation thin film
transistor T3 are turned on corresponding to a low level scan
signal Sn, thereby causing the driving thin film transistor T1 to
be diode-coupled by the turned on compensation thin film transistor
T3, and biased in a forward direction.
[0071] Then, a compensation voltage Dm+Vth (Vth is a negative
value), which is obtained by subtracting the threshold voltage Vth
of the driving thin film transistor T1 from the data signal Dm
supplied from the data line 171, is applied to the gate electrode
G1 of the driving thin film transistor T1.
[0072] The driving voltage ELVDD and the compensation voltage
Dm+Vth are applied to both ends Cst1 and Cst2 of the storage
capacitor Cst, and a charge corresponding to a difference between
voltages at both ends Cst1 and Cst2 is stored in the storage
capacitor Cst. Subsequently, the level of the light emission
control signal En supplied from the light emission control line 123
during the light emission period is changed from a high level to a
low level. Then, the operation control thin film transistor T5 and
the light emission control thin film transistor T6 are turned on by
a low level light emission control signal En during the light
emission period.
[0073] Then, the driving current Id is generated according to a
difference between the voltage of the gate electrode G1 of the
driving thin film transistor T1 and the driving voltage ELVDD, and
the driving current Id is supplied through the light emission
control thin film transistor T6 to the OLED. The gate-source
voltage Vgs of the driving thin film transistor T1 is maintained at
`(Dm+Vth)-ELVDD` by the storage capacitor Cst during the light
emission period, and the driving current Id is proportional to a
square of a difference between the threshold voltage and the
source-gate voltage, that is, the driving current Id is
proportional to `(Dm-ELVDD).sup.2`, according to a current-voltage
relationship of the driving thin film transistor T1. Accordingly,
the driving current Id is determined regardless of the threshold
voltage Vth of the driving thin film transistor T1.
[0074] A detailed structure of the pixel of the organic light
emitting diode display shown in FIG. 1 will be described in detail
with reference to FIGS. 2 to 5 together with FIG. 1. FIG. 2 is a
view schematically showing positions of the plurality of thin film
transistors T1-T6 and the capacitor Cst elements of the organic
light emitting diode display according to the first exemplary
embodiment, FIG. 3 is a specific layout view of one pixel of the
organic light emitting diode display according to the first
exemplary embodiment, FIG. 4 is a cross-sectional view of the
organic light emitting diode display of the first exemplary
embodiment shown in FIG. 3, which is taken along the line IV-IV,
and FIG. 5 is a cross-sectional view of the organic light emitting
diode display of the first exemplary embodiment shown in FIG. 3,
which is taken along the line V-V.
[0075] As shown in FIGS. 2 to 5, the pixel of the organic light
emitting diode display according to the first exemplary embodiment
includes the scan line 121, the prior scan line 122, the light
emission control line 123, and the initialization voltage line 124
formed in a row direction, and for respectively applying the scan
signal Sn, the prior scan signal Sn-1, the light emission control
signal En, and the initialization voltage Vint, and also includes
the data line 171 and the driving voltage line 172 crossing the
scan line 121, the prior scan line 122, the light emission control
line 123, and the initialization voltage line 124, and for
respectively applying the data signal Dm and the driving voltage
ELVDD to the pixel.
[0076] Further, in the pixel, the driving thin film transistor T1,
the switching thin film transistor T2, the compensation thin film
transistor T3, the initialization thin film transistor T4, the
operation control thin film transistor T5, the light emission
control thin film transistor T6, the storage capacitor Cst, and the
OLED 70 are formed.
[0077] The driving thin film transistor T1, the switching thin film
transistor T2, the compensation thin film transistor T3, the
initialization thin film transistor T4, the operation control thin
film transistor T5, and the light emission control thin film
transistor T6 are formed along the semiconductor layer 131, and the
semiconductor layer 131 is bent to have various shapes. The
semiconductor layer 131 may be formed of polysilicon, and includes
a channel region, which is not doped with an impurity, and a source
region and a drain region formed at respective sides of the channel
region to be doped with the impurity. The type of impurity
corresponds to the type of thin film transistor, and an N-type
impurity or a P-type impurity may be used. The semiconductor layer
131 includes a driving semiconductor layer 131a formed in the
driving thin film transistor T1, a switching semiconductor layer
131b formed in the switching thin film transistor T2, a
compensation semiconductor layer 131c formed in the compensation
thin film transistor T3, an initialization semiconductor layer 131d
formed in the initialization thin film transistor T4, an operation
control semiconductor layer 131e formed in the operation control
thin film transistor T5, and a light emission control semiconductor
layer 131f formed in the light emission control thin film
transistor T6.
[0078] The driving thin film transistor T1 includes the driving
semiconductor layer 131a, the driving gate electrode 125a, the
driving source electrode 176a, and the driving drain electrode
177a. The driving semiconductor layer 131a is bent, and includes a
plurality of first extension portions 31 extending in a first
direction, a plurality of second extension portions 32 extending in
a second direction that is different from the first direction, and
a plurality of bent portions 33 coupling respective ones of the
first extension portions 31 and the second extension portions 32.
Accordingly, the driving semiconductor layer 131a may be in a
zigzag form. The driving semiconductor layer 131a shown in FIGS. 2
and 3 includes three first extension portions 31, two second
extension portions 32, and four bent portions 33. Accordingly, the
driving semiconductor layer 131a may be longitudinally arranged in
a `` form (e.g., 3 substantially parallel and horizontal lines,
wherein the top and center lines are coupled by a vertical line at
one side, and wherein the center and bottom lines are coupled by
another vertical line at an opposite side, as shown in FIG. 6).
[0079] As described above, the driving semiconductor layer 131a may
be longitudinally formed in a narrow space by forming the driving
semiconductor layer 131a including a plurality of bent portions 33.
Accordingly, since the driving channel region 131a1 of the driving
semiconductor layer 131a may be longitudinally formed, the driving
range of the gate voltage applied to the driving gate electrode
125a is broadened. Therefore, since the driving range of the gate
voltage is relatively broad, a gray level of light emitted from an
OLED can be more finely and precisely controlled by adjusting the
magnitude of the gate voltage, and as a result, it is possible to
increase a resolution of the organic light emitting diode display
and improve display quality.
[0080] In the driving semiconductor layer 131a, the first extension
portion 31, the second extension portion 32, and the bent portion
33 may be variously located to implement various exemplary
embodiments such as `S`, `M`, and `W` (e.g., S-shaped, M-shaped, or
W-shaped).
[0081] FIG. 6 is an enlarged layout view of a driving thin film
transistor of an organic light emitting diode display according to
a second exemplary embodiment of the present invention.
[0082] As shown in FIG. 6, the driving semiconductor layer 131a may
be in the shape of an S.
[0083] The driving source electrode 176a corresponds to the driving
source region 176a doped with the impurity in the driving
semiconductor layer 131a, and the driving drain electrode 177a
corresponds to the driving drain region 177a doped with the
impurity in the driving semiconductor layer 131a. The storage
capacitor Cst is formed thereon to overlap the driving gate
electrode 125a.
[0084] The storage capacitor Cst includes a first storage capacitor
plate 125h and a second storage capacitor plate 127 with the second
gate insulating layer 142 interposed therebetween. Herein, the
driving gate electrode 125a also plays a role of the first storage
capacitor plate 125h, the second gate insulating layer 142 becomes
a dielectric material, and storage capacitance is determined by the
charge accumulated in the storage capacitor Cst, and by the voltage
between both capacitor plates 125a and 127.
[0085] The first storage capacitor plate 125h is separated from the
adjacent pixel to form a rectangle, and is formed of the same
material as the scan line 121, the prior scan line 122, the light
emission control line 123, the switching gate electrode 125b, the
compensation gate electrode 125c, the operation control gate
electrode 125e, and the light emission control gate electrode 125f,
which are on the same layer first storage capacitor plate 125h.
[0086] The second storage capacitor plate 127 is coupled to the
adjacent pixel, and is formed of the same material as the
initialization voltage line 124, and is formed on the same layer as
the initialization voltage line 124.
[0087] As described above, it is possible to ensure sufficient
storage capacitance even at a high resolution by forming the
storage capacitor Cst overlapping the driving semiconductor layer
131a to ensure a region of the storage capacitor Cst, which is
reduced by the driving semiconductor layer 131a having the bent
portion.
[0088] The switching thin film transistor T2 includes the switching
semiconductor layer 131b, the switching gate electrode 125b, the
switching source electrode 176b, and the switching drain electrode
177b. The switching source electrode 176b is a portion protruding
from the data line 171, and the switching drain electrode 177b
corresponds to a switching drain region 177b doped with an impurity
in the switching semiconductor layer 131b.
[0089] The compensation thin film transistor T3 includes the
compensation semiconductor layer 131c, the compensation gate
electrode 125c, the compensation source electrode 176c, and the
compensation drain electrode 177c. The compensation source
electrode 176c corresponds to the compensation source region 176c
doped with the impurity in the compensation semiconductor layer
131c, and the compensation drain electrode 177c corresponds to the
compensation drain region 177c doped with the impurity in the
compensation semiconductor layer 131c. The compensation gate
electrode 125c prevents a leakage current by forming a separate
dual gate electrode 25.
[0090] The initialization thin film transistor T4 includes the
initialization semiconductor layer 131d, the initialization gate
electrode 125d, the initialization source electrode 176d, and the
initialization drain electrode 177d. The initialization drain
electrode 177d corresponds to the initialization drain region 177d
doped with the impurity in the initialization semiconductor layer
131d. The initialization source electrode 176d is coupled through
an initialization connection line 78 to the initialization voltage
line 124. An end of the initialization connection line 78 is
coupled through a contact hole 161 formed in the second gate
insulating layer 142 and an interlayer insulating layer 160 to the
initialization voltage line 124, and another end of the
initialization connection line 78 is coupled through the contact
hole 162 formed in the gate insulating layer 141, the second gate
insulating layer 142, and the interlayer insulating layer 160 to
the initialization source electrode 176d.
[0091] The operation control thin film transistor T5 includes the
operation control semiconductor layer 131e, the operation control
gate electrode 125e, the operation control source electrode 176e,
and the operation control drain electrode 177e. The operation
control source electrode 176e is a portion of the driving voltage
line 172, and the operation control drain electrode 177e
corresponds to the operation control drain region 177e doped with
the impurity in the operation control semiconductor layer 131e.
[0092] The light emission control thin film transistor T6 includes
the light emission control semiconductor layer 131f, the light
emission control gate electrode 125f, the light emission control
source electrode 176f, and the light emission control drain
electrode 177f. The light emission control source electrode 176f
corresponds to the light emission control source region 176f doped
with the impurity in the light emission control semiconductor layer
131f.
[0093] An end of the driving semiconductor layer 131a of the
driving thin film transistor T1 is coupled to the switching
semiconductor layer 131b and the compensation semiconductor layer
131c, and another end of the driving semiconductor layer 131a is
coupled to the operation control semiconductor layer 131e and the
light emission control semiconductor layer 131f. Therefore, the
driving source electrode 176a is coupled to the switching drain
electrode 177b and to the operation control drain electrode 177e,
and the driving drain electrode 177a is coupled to the compensation
source electrode 176c and to the light emission control source
electrode 176f.
[0094] The first storage capacitor plate 125h of the storage
capacitor Cst is coupled through the connection member 174 to the
compensation drain electrode 177c and to the initialization drain
electrode 177d. The connection member 174 is formed on the same
layer as the data line 171, an end of the connection member 174 is
coupled through a contact hole 166 formed in the first gate
insulating layer 141, in the second gate insulating layer 142, and
in the interlayer insulating layer 160 to the compensation drain
electrode 177c and to the initialization drain electrode 177d, and
another end of the connection member 174 is coupled through a
contact hole 167 formed in the second gate insulating layer 142 and
in the interlayer insulating layer 160 to the first storage
capacitor plate 125h. In this case, another end of the connection
member 174 is coupled through a storage opening 27 formed in the
second storage capacitor plate 127 to the first storage capacitor
plate 125h.
[0095] The second storage capacitor plate 127 of the storage
capacitor Cst is coupled through a contact hole 168 formed in the
interlayer insulating layer 160 to a driving voltage line 172.
[0096] The switching thin film transistor T2 is used as a switching
element for selecting the pixel that is to emit light. The
switching gate electrode 125b is coupled to the scan line 121, the
switching source electrode 176b is coupled to the data line 171,
and the switching drain electrode 177b is coupled to the driving
thin film transistor T1 and to the operation control thin film
transistor T5. In addition, the light emission control drain
electrode 177f of the light emission control thin film transistor
T6 is directly coupled through a contact hole 181 formed in the
protective layer 180 to a pixel electrode 191 of an organic light
emitting diode 70.
[0097] Hereinafter, referring to FIGS. 4 and 5, a structure of the
organic light emitting diode display according to the first
exemplary embodiment will be described in detail according to the
lamination order.
[0098] The structure of the thin film transistor will be described
based on the driving thin film transistor T1, the switching thin
film transistor T2, and the light emission control thin film
transistor T6. In addition, the laminate structures of the film
transistors T3, T4, and T5 are almost the same as the laminate
structures of the driving thin film transistor T1, the switching
thin film transistor T2, and the light emission control thin film
transistor T6, and thus, the remaining thin film transistors T3,
T4, and T5 are not described in further detail.
[0099] A buffer layer 111 is formed on the substrate 110, and the
substrate 110 may be formed of an insulating substrate made of
glass, quartz, ceramics, plastics or the like.
[0100] The driving semiconductor layer 131a, the switching
semiconductor layer 131b, and the light emission control
semiconductor layer 131f are formed on the buffer layer 111. The
driving semiconductor layer 131a includes a driving source region
176a and a driving drain region 177a facing each other with a
driving channel region 131a1 interposed therebetween, the switching
semiconductor layer 131b includes a switching source region 132b
and a switching drain region 177b facing each other with a
switching channel region 131b1 interposed therebetween, and the
light emission control thin film transistor T6 includes a light
emission control channel region 131f1, the light emission control
source region 176f, and the light emission control drain region
133f.
[0101] Since the driving semiconductor layer 131a includes a
plurality of bent portions 33 to be formed in a zigzag form,
specifically, in a ` ` form, the driving semiconductor layer 131a
may be longitudinally formed in a narrow space. Accordingly, since
the driving channel region 131a1 of the driving semiconductor layer
131a may be longitudinally formed, the driving range of the gate
voltage applied to the driving gate electrode 125a may be
broadened.
[0102] The first gate insulating layer 141 formed of silicon
nitride (SiNx) or silicon oxide (SiO2) is formed on the switching
semiconductor layer 131a, the driving semiconductor layer 131b, and
the light emission control semiconductor layer 131f.
[0103] The first gate wires including the scan line 121, which
includes the driving gate electrode 125a, the switching gate
electrode 125b, and the compensation gate electrode 125c, the prior
scan line 122, which includes the initialization gate electrode
125d, and the light emission control line 123, which includes the
operation control gate electrode 125e and the light emission
control gate electrode 125f, are formed on the first gate
insulating layer 141.
[0104] The driving gate electrode 125a is separated from the scan
line 121, and the floating gate electrode 25 overlaps the driving
channel region 131a1 of the driving semiconductor layer 131a. In
addition, the switching gate electrode 125b is coupled to the scan
line 121, and the switching gate electrode 125b overlaps the
switching channel region 131b1 of the switching semiconductor layer
131b. In addition, the light emission control gate electrode 125f
overlaps the light emission control channel region 131f1 of the
light emission control semiconductor layer 131f.
[0105] Because, in the switching thin film transistor T2, only the
first gate insulating layer 141 is formed between the switching
gate electrode 125b and the switching semiconductor layer 131b, it
is possible to perform a relatively rapid switching operation, and
in the driving thin film transistor T1, only the first gate
insulating layer 141 is formed between the driving gate electrode
125a and the driving semiconductor layer 131a, but since the length
of the driving channel region 131a1 of the driving semiconductor
layer 131a is relatively large, the driving range of the gate
voltage applied to the driving gate electrode 125a is relatively
broadened, such that it is possible to more finely, or precisely,
control the gray level of light emitted from the OLED.
[0106] The first gate wires 125a, 125b, 125c, 125d, 125e, 125f,
121, 122, and 123 and the first gate insulating layer 141 cover the
second gate insulating layer 142. The second gate insulating layer
142 may be formed of silicon nitride (SiNx) or silicon oxide
(SiO2).
[0107] Second gate wires including the second storage capacitor
plate 127 and the initialization voltage line 124 are formed on the
second gate insulating layer 142. The second storage capacitor
plate 127 overlaps the first storage capacitor plate 125h to form
the storage capacitor Cst, and the first storage capacitor plate
125h overlaps the driving semiconductor layer 131a. As described
above, it is possible to ensure the storage capacitance, even at a
high resolution wherein the size of the pixel is reduced, by
ensuring a region of the storage capacitor Cst reduced by the
driving semiconductor layer 131a having the bent portion 33 by
forming the storage capacitor Cst overlapping the driving
semiconductor layer 131a.
[0108] The interlayer insulating layer 160 is formed on the second
gate insulating layer 142, on the second storage capacitor plate
127, and on the initialization voltage line 124. The first gate
insulating layer 141, the second gate insulating layer 142, and the
interlayer insulating layer 160 together have a contact hole 163
through which the light emission control drain region 133f of the
light emission control semiconductor layer 131f is exposed. Like
the first gate insulating layer 141 and the second gate insulating
layer 142, the interlayer insulating layer 160 may be made of a
ceramic-based material such as silicon nitride (SiNx) or silicon
oxide (SiO2).
[0109] Data wires including the data line 171, the switching source
electrode 176b, the driving voltage line 172, the connection member
174, and the light emission control drain electrode 177f, are
formed on the interlayer insulating layer 160.
[0110] In addition, the switching source electrode 176b and the
light emission control drain electrode 177f are coupled through the
contact holes 164 and 163 formed in the interlayer insulating layer
160, in the first gate insulating layer 141, and in the second gate
insulating layer 142 to the switching source region 132b of the
switching semiconductor layer 131b and to the light emission
control drain region 133f of the light emission control
semiconductor layer 131f, respectively.
[0111] The protective layer 180, which covers the data wires 171,
172, 174, and 177f, is formed on the interlayer insulating layer
160, and the pixel electrode 191 is formed on the protective layer
180. The pixel electrode 191 is coupled through the contact hole
181 formed in the protective layer 180 to the light emission
control drain electrode 177f.
[0112] A barrier rib 350 is formed on an edge of the pixel
electrode 191 and the protective layer 180, and the barrier rib 350
has a barrier rib opening 351 through which the pixel electrode 191
is exposed. The barrier rib 350 may be made of, for example, resins
such as polyacrylates and polyimides or silica-based inorganic
materials.
[0113] An organic emission layer 370 is formed on the pixel
electrode 191 exposed through the barrier rib opening 351, and the
common electrode 270 is formed on the organic emission layer 370.
As described above, the organic light emitting diode 70 including
the pixel electrode 191, the organic emission layer 370, and the
common electrode 270 is formed.
[0114] Herein, the pixel electrode 191 is an anode that is a hole
injection electrode, and the common electrode 270 is a cathode that
is an electron injection electrode. However, the present invention
is not limited thereto, and the pixel electrode 191 may be the
cathode, and the common electrode 270 may be the anode, according
to the driving method of the organic light emitting diode display.
Holes and electrons are respectively injected from the pixel
electrode 191 and the common electrode 270 into the organic
emission layer 370, and when the exciton, which results from the
combined injected holes and electrons, falls from an excited state
to a bottom state, light is emitted.
[0115] The organic emission layer 370 may be formed of a low
molecular weight organic material, or a high molecular weight
organic material such as, for example, PEDOT (poly
3,4-ethylenedioxythiophene). Further, the organic emission layer
370 may be formed of a multilayer structure including one or more
of an emission layer, a hole injection layer HIL, a hole transport
layer HTL, an electron transport layer ETL, and an electron
injection layer EIL. In the case where all the layers are included,
the hole injection layer HIL is located on the pixel electrode 710,
which is the anode, and the hole transport layer HTL, the emission
layer, the electron transport layer ETL, and the electron injection
layer EIL are sequentially laminated thereon. Since the common
electrode 270 is formed of a reflective conductive material, a rear
surface light emission-type organic light emitting diode display is
realized. Material such as lithium (Li), calcium (Ca), lithium
fluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/AI),
aluminum (AI), silver (Ag), magnesium (Mg), or gold (Au) may be
used as the reflective material.
[0116] In the first exemplary embodiment, the first storage
capacitor plate 125h has a rectangular shape. However, a third
exemplary embodiment of the present invention enables increased
storage capacitance by extending a portion of the first storage
capacitor plate 125h.
[0117] Referring now to FIG. 7, an organic light emitting diode
display according to the third exemplary embodiment of the present
invention will be described in detail, wherein FIG. 7 is a layout
view of an organic light emitting diode display according to a
third exemplary embodiment.
[0118] The third exemplary embodiment of the present invention is
substantially the same as the first exemplary embodiment shown in
FIGS. 1 to 5, with the exception of the driving semiconductor layer
and the storage capacitor, and thus a repeated description of the
similar features will be omitted.
[0119] As shown in FIG. 7, the driving thin film transistor T1 of
the organic light emitting diode display according to the third
exemplary embodiment includes the driving semiconductor layer 131a,
the driving gate electrode 125a, the driving source electrode 176a,
and the driving drain electrode 177a. The driving semiconductor
layer 131a is bent, and includes a plurality of first extension
portions 31 extending in a first direction, a plurality of second
extension portions 32 extending in a second direction that is
different from the first direction, and a plurality of bent
portions 33 coupling respective ones of the first extension
portions 31 and the second extension portions 32.
[0120] The driving semiconductor layer 131a may extend from a
lateral surface of the data line 171 to be adjacent to the data
line 171. Accordingly, since the length of the driving
semiconductor layer 131a is increased, the driving range of the
gate voltage applied to the driving gate electrode 125a may be
broadened.
[0121] In the third exemplary embodiment, the compensation source
electrode 176c of the compensation thin film transistor T3, and the
light emission control source electrode 176f of the light emission
control thin film transistor T6, are formed on the same layer, but
the compensation source electrode 176c and the light emission
control source electrode 176f are separated from each other with a
spacing portion d therebetween so as to not overlap the driving
semiconductor layer 131a.
[0122] The driving gate electrode 125a, that is, the first storage
capacitor plate 125h may extend in a lateral direction to overlap
the extended driving semiconductor layer 131a, and the first
storage capacitor plate 125h may partially overlap the spacing
portion d. In addition, the second storage capacitor plate 127
extends so as to overlap the first storage capacitor plate 125h,
and the second storage capacitor plate 127 partially overlaps the
spacing portion d.
[0123] The compensation source electrode 176c and the light
emission control source electrode 176f, which are partially
separated from each other, are coupled to each other through the
transistor connection portion 71 formed on the same layer as the
data line 171. An end of the transistor connection portion 71 is
coupled through a contact hole 61 formed in the first gate
insulating layer 141, in the second gate insulating layer 142, and
in the interlayer insulating layer 160, to the compensation source
electrode 176c. Another end of the transistor connection portion 71
is coupled through a contact hole 62 formed in the first gate
insulating layer 141, in the second gate insulating layer 142, and
in the interlayer insulating layer 160, to the light emission
control source electrode 176f. Accordingly, the storage capacitor
Cst extends to overlap the transistor connection portion 71, and
the driving semiconductor layer 131a extends to overlap the
transistor connection portion 71.
[0124] As described above, since the compensation source electrode
176c and the light emission control source electrode 176f may be
coupled through the transistor connection portion 71 to allow the
driving semiconductor layer 131a, the first storage capacitor plate
125h, and the second storage capacitor plate 127 to extend to the
spacing portion d between the compensation source electrode 176c
and the light emission control source electrode 176f, the storage
capacitor Cst may be further extended.
[0125] In the first exemplary embodiment, the driving semiconductor
layer 131a is not directly coupled to the compensation source
electrode 176c at the bent portion 33. However, in a fourth
exemplary embodiment of the present invention, a branched portion
34 is directly branched from the compensation source electrode 176c
at the bent portion 33.
[0126] Now referring to FIG. 8, an organic light emitting diode
display according to the fourth exemplary embodiment will be
described in detail. FIG. 8 is an enlarged layout view of a driving
thin film transistor of an organic light emitting diode display
according to the fourth exemplary embodiment. The fourth exemplary
embodiment is substantially the same as the first exemplary
embodiment shown in FIGS. 1 to 5, with the exception of the driving
semiconductor layer and the storage capacitor, and thus, repeated
description of the substantially similar features will be
omitted.
[0127] As shown in FIG. 8, the driving thin film transistor T1 of
the organic light emitting diode display according to the fourth
exemplary embodiment includes the driving semiconductor layer 131a,
the driving gate electrode 125a, the driving source electrode 176a,
and the driving drain electrode 177a. The driving semiconductor
layer 131a is bent, and includes the first extension portion 31
extending in a first direction, the second extension portion 32
extending in a second direction that is different from the first
direction, the bent portion 33 coupling the first extension portion
31 and the second extension portion 32, and the branched portion 34
directly branched to the compensation source electrode 176c at the
bent portion 33. The entire driving semiconductor layer 131a has a
` d` form (e.g., a vertical line having a horizontal line extending
from near a center of the vertical line). Accordingly, since the
length of the driving semiconductor layer 131a is increased, the
driving range of the gate voltage applied to the driving gate
electrode 125a may be broadened.
[0128] The branched portion 34 corresponds to a first path
semiconductor layer CH1 coupled to the compensation thin film
transistor T3, and the second extension portion 32 corresponds to a
second path semiconductor layer CH2 coupled to the light emission
control thin film transistor T6. In addition, the driving gate
electrode 125a, that is, the first storage capacitor plate 125h,
overlaps the first path semiconductor layer CH1 and the second path
semiconductor layer CH2 of the driving semiconductor layer 131a,
and the second storage capacitor plate 127 overlaps the first
storage capacitor plate 125h. Accordingly, since the area of the
storage capacitor Cst is increased, sufficient storage capacitance
can be attained even at a high resolution.
[0129] In the fourth exemplary embodiment, the lengths of the first
path semiconductor layer CH1 and the second path semiconductor
layer CH2 are substantially the same as each other. However, in a
fifth exemplary embodiment of the present invention, the lengths of
the first path semiconductor layer CH1 and the second path
semiconductor layer CH2 are different from each other.
[0130] Referring now to FIG. 9, an organic light emitting diode
display according to the fifth exemplary embodiment of the present
embodiment will be described in detail. FIG. 9 is an enlarged
layout view of a driving thin film transistor of an organic light
emitting diode display according to the fifth exemplary embodiment,
which is substantially the same as the fourth exemplary embodiment
shown in FIG. 8, with the exception of the driving semiconductor
layer and the storage capacitor, and thus a repeated description of
the similarities will be omitted.
[0131] As shown in FIG. 9, the driving thin film transistor T1 of
the organic light emitting diode display according to the fifth
exemplary embodiment includes the driving semiconductor layer 131a,
the driving gate electrode 125a, the driving source electrode 176a,
and the driving drain electrode 177a. The driving semiconductor
layer 131a is bent. The driving semiconductor layer 131a includes
the first extension portion 31 extending in a first direction, the
second extension portion 32 extending in a second direction that is
different from the first direction, the bent portion 33 coupling
the first extension portion 31 and the second extension portion 32,
and the branched portion 34 directly branched from the compensation
source electrode 176c at the bent portion 33. Accordingly, since
the length of the driving semiconductor layer 131a is increased,
the driving range of the gate voltage applied to the driving gate
electrode 125a may be broadened.
[0132] The branched portion 34 corresponds to the first path
semiconductor layer CH1 coupled to the compensation thin film
transistor T3, and a zigzag portion 30, which includes the first
extension portion 31, the second extension portion 32, and the bent
portion 33, corresponds to the second path semiconductor layer CH2
coupled to the light emission control thin film transistor T6. In
addition, the driving gate electrode 125a, that is, the first
storage capacitor plate 125h, overlaps the first path semiconductor
layer CH1 and the second path semiconductor layer CH2 of the
driving semiconductor layer 131a, and the second storage capacitor
plate 127 overlaps the first storage capacitor plate 125h.
Accordingly, since the area of the storage capacitor Cst is
increased, sufficient storage capacitance can be ensured even at a
high resolution.
[0133] Further, the length of the first path semiconductor layer
CH1 is smaller than the length of the second path semiconductor
layer CH2. This structure is called a short pass diode structure,
and since the length of the first path semiconductor layer CH1 is
different from the length of the second path semiconductor layer
CH2, currents having different magnitudes may concurrently (e.g.,
simultaneously) flow. Since the length of the first path
semiconductor layer CH1 is relatively small, a relatively large
current may flow therein, and since the length of the second path
semiconductor layer CH2 is relatively large, relatively small
currents may flow therein (e.g., at a same time as the relatively
large current in the first path semiconductor layer CH1). As
described above, a constant current may be provided to the organic
light emitting diode while a threshold voltage is rapidly
compensated by using a characteristic of concurrently (e.g.,
simultaneously) providing currents having different magnitudes by
one driving thin film transistor to reduce a current variation
between the driving thin film transistors having different
characteristics, thus preventing stains caused by a difference
between magnitudes of the currents, and the driving operation
thereof will be described in detail below.
[0134] The driving thin film transistor T1 charges the voltage
corresponding to the data signal Dm in the storage capacitor Cst
according to the scan signal Sn, and provides the current
corresponding to the voltage charged in the storage capacitor Cst
to the OLED. Because the threshold voltage Vth of the driving thin
film transistor T1 may be changed over time, the compensation thin
film transistor T3 performs diode-connection of the driving thin
film transistor T1 according to the scan signal Sn to compensate
the threshold voltage Vth of the driving thin film transistor
T1.
[0135] Accordingly, since the relatively large current flowing
through the first path semiconductor layer CH1 while the data
signal Dm is transferred can rapidly charge the storage capacitor
Cst through the compensation thin film transistor T3 (e.g., to a
predetermined voltage/compensation voltage), the compensation of
the threshold voltage Vth may be relatively rapidly and easily
performed.
[0136] Further, the relatively small current flowing through the
second path semiconductor layer CH2 is provided through the light
emission control thin film transistor T6 to the OLED, stains may be
avoided or prevented. That is, since a change in current according
to a change in voltage applied to the driving gate electrode 125a
of the driving thin film transistor T1 is small, a current control
voltage width (data swing range) can be increased, such that the
range of the data voltage displaying a gamma can be increased, and
it is possible to avoid or prevent stains caused by a difference
between magnitudes of the currents by reducing a current variation
between the driving thin film transistors having different
characteristics (e.g., distribution characteristics).
[0137] Since a known driving thin film transistor can allow only a
current of one magnitude to flow through the driving semiconductor
layer 131a, currents having the same magnitude are provided to the
compensation thin film transistor T3 and the light emission control
thin film transistor T6. Accordingly, when the length of the
driving semiconductor layer 131a of the driving thin film
transistor T1 is relatively small, so that the threshold voltage
Vth of the driving thin film transistor T1 is rapidly compensated,
because an s-factor of a transistor characteristic curve (transfer
curve) is reduced, thereby increasing a ratio (e.g., change ratio)
of a change in current to a change in voltage applied to the
driving gate electrode, thereby causing a relatively large current
to be provided to the OLED, potentially causing stains.
[0138] Conversely, when the length of the driving semiconductor
layer 131a of the driving thin film transistor T1 is set to be
relatively large in an attempt to avoid or prevent stains, because
the threshold voltage Vth of the driving thin film transistor is
compensated by the small current relatively slowly, low gray level
compensation is not performed, causing stains. This problem becomes
more noticeable as the resolution is increased. That is, because an
amount of time during which the data signal Dm is applied is
reduced as the resolution is increased, the current flows to the
OLED before the threshold voltage Vth is completely compensated,
causing the current variation to generate stains.
[0139] Accordingly, it is possible to avoid or prevent low gray
level stains by setting the length of the first path semiconductor
layer CH1 coupled to the compensation thin film transistor T3 to be
smaller than the length of the second path semiconductor layer CH2
coupled to the light emission control thin film transistor T6.
[0140] The first exemplary embodiment has a structure where the
driving semiconductor layer of the driving thin film transistor is
bent in a "6tr 1cap" structure, which is formed of six thin film
transistors and one storage capacitor. However, a sixth exemplary
embodiment of the present embodiment has a structure where the
driving semiconductor layer of the driving thin film transistor is
bent in a "7tr 1cap" structure formed of seven thin film
transistors and one storage capacitor.
[0141] Referring now to FIGS. 10 and 11, an organic light emitting
diode display according to the sixth exemplary embodiment will be
described in detail. FIG. 10 is an equivalent circuit of one pixel
of an organic light emitting diode display according to the sixth
exemplary embodiment, and FIG. 11 is a layout view of the organic
light emitting diode display according to the sixth exemplary
embodiment, which is substantially the same as the first exemplary
embodiment shown in FIGS. 1 to 5, except that a current control
thin film transistor is added, and thus a repeated description of
similarities will be omitted.
[0142] As shown in FIGS. 10 and 11, one pixel of the organic light
emitting diode display according to the sixth exemplary embodiment
includes a plurality of signal lines 121, 122, 123, 124, 128, 171,
and 172, and a plurality of thin film transistors T1, T2, T3, T4,
T5, T6, and T7, the storage capacitor Cst, and the OLED coupled to
a plurality of signal lines.
[0143] The plurality of thin film transistors includes the driving
thin film transistor T1, the switching thin film transistor T2, the
compensation thin film transistor T3, the initialization thin film
transistor T4, the operation control thin film transistor T5, the
light emission control thin film transistor T6, and the current
control thin film transistor T7.
[0144] The signal line includes the scan line 121 for transferring
the scan signal Sn, the prior scan line 122 for transferring the
prior scan signal Sn-1 to the initialization thin film transistor
T4, the light emission control line 123 for transferring the light
emission control signal En to the operation control thin film
transistor T5 and to the light emission control thin film
transistor T6, the data line 171 crossing the scan line 121 and for
transferring the data signal Dm, the driving voltage line 172,
which is substantially parallel to the data line 171, for
transferring the driving voltage ELVDD, the initialization voltage
line 124 for transferring the initialization voltage Vint for
initializing the driving thin film transistor T1, and a bypass
control line 128 for transferring a bypass signal BP to a bypass
thin film transistor T7.
[0145] The gate electrode G1 of the driving thin film transistor T1
is coupled to an end (e.g., a first end) Cst1 of the storage
capacitor Cst, the source electrode S1 of the driving thin film
transistor T1 is coupled via the operation control thin film
transistor T5 to the driving voltage line 172, the drain electrode
D1 of the driving thin film transistor T1 is electrically coupled
via the light emission control thin film transistor T6 to an anode
of the OLED.
[0146] The gate electrode G2 of the switching thin film transistor
T2 is coupled to the scan line 121, the source electrode S2 of the
switching thin film transistor T2 is coupled to the data line 171,
the drain electrode D2 of the switching thin film transistor T2 is
coupled via the operation control thin film transistor T5 to the
driving voltage line 172, while also being coupled to the source
electrode S1 of the driving thin film transistor T1.
[0147] The gate electrode G4 of the initialization thin film
transistor T4 is coupled to the prior scan line 122, the source
electrode S4 of the initialization thin film transistor T4 is
coupled to the initialization voltage line 124, and the drain
electrode D4 of the initialization thin film transistor T4 is
coupled to the first end Cst1 of the storage capacitor Cst, to the
drain electrode D3 of the compensation thin film transistor T3, and
to the gate electrode G1 of the driving thin film transistor
T1.
[0148] Agate electrode G7 of the bypass thin film transistor T7 is
coupled to the bypass control line 128, a source electrode S7 of
the bypass thin film transistor T7 is coupled to the drain
electrode D6 of the light emission control thin film transistor T6
and to the anode of the OLED, and a drain electrode D7 of the
bypass thin film transistor T7 is coupled to the initialization
voltage line 124 and to the source electrode S4 of the
initialization thin film transistor T4.
[0149] Hereinafter, operation of the bypass thin film transistor T7
of the organic light emitting diode display according to the sixth
exemplary embodiment will be described.
[0150] The bypass thin film transistor T7 receives the bypass
signal BP from the bypass control line 128. The bypass signal BP is
a voltage (e.g., a voltage of a predetermined level) at which the
bypass thin film transistor T7 can be always turned off, and the
bypass thin film transistor T7 receives the voltage of a level
sufficient to turn the transistor off to the gate electrode G7 to
turn off the bypass transistor T7, and allow a portion of the
driving current Id to flow as a bypass current Ibp through the
bypass transistor T7.
[0151] When the minimum current of the driving thin film transistor
T1 for displaying a black image flows as the driving current Id, if
the OLED emits light, the black image is not ideally displayed.
Accordingly, the bypass thin film transistor T7 of the organic
light emitting diode display according to the sixth exemplary
embodiment may disperse, or divert, a portion of the minimum
current of the driving thin film transistor T1 as a bypass current
Ibp to a current path other than the current path of the organic
light emitting diode. Herein, the minimum current of the driving
thin film transistor refers to a current when the gate-source
voltage Vgs of the driving thin film transistor T1 is smaller than
the threshold voltage Vth, thus turning off the driving thin film
transistor. The minimum driving current (e.g., current of 10 pA or
less) when the driving thin film transistor is turned off is
transferred to the organic light emitting diode to be displayed as
an image of black luminance.
[0152] When the minimum driving current displaying the black image
flows, a bypass transferring effect of the bypass current Ibp is
large, but when the large driving current for displaying an image
(such as a general image or a white image) flows, an effect of the
bypass current Ibp is hardly present. Accordingly, when the driving
current displaying the black image flows, a light emitting current
Ioled of the organic light emitting diode, which corresponds to the
driving current Id reduced by the bypass current Ibp through the
bypass thin film transistor T7, has the minimum required current at
which the black image can be displayed.
[0153] Accordingly, a contrast ratio may be improved by
implementing a precise black luminance image by using the bypass
thin film transistor T7.
[0154] A structure of the pixel of the organic light emitting diode
display shown in FIG. will be described with reference to FIG. 11
together with FIGS. 10 and 3. FIG. 11 is a layout view of the
organic light emitting diode display according to the sixth
exemplary embodiment.
[0155] As shown in FIGS. 10 and 11, the pixel of the organic light
emitting diode display according to the sixth exemplary embodiment
includes the scan line 121, the prior scan line 122, the light
emission control line 123, the initialization voltage line 124, and
the bypass control line 128 formed in a row direction for
respectively applying the scan signal Sn, the prior scan signal
Sn-1, the light emission control signal En, the initialization
voltage Vint, and the bypass signal BP, and also includes the data
line 171 and the driving voltage line 172 crossing the scan line
121, the prior scan line 122, the light emission control line 123,
the initialization voltage line 124, and the bypass control line
128, and for respectively applying the data signal Dm and the
driving voltage ELVDD to the pixel.
[0156] Further, in the pixel, the driving thin film transistor T1,
the switching thin film transistor T2, the compensation thin film
transistor T3, the initialization thin film transistor T4, the
operation control thin film transistor T5, the light emission
control thin film transistor T6, the bypass thin film transistor
T7, the storage capacitor Cst, and the OLED 70 are formed.
[0157] The driving thin film transistor T1, the switching thin film
transistor T2, the compensation thin film transistor T3, the
initialization thin film transistor T4, the operation control thin
film transistor T5, the light emission control thin film transistor
T6, and the bypass thin film transistor T7 are formed along the
semiconductor layer 131, which is bent to have various shapes. The
semiconductor layer 131 may be formed of, for example, polysilicon,
and includes a channel region not doped with an impurity, and a
source region and a drain region formed at respective sides of the
channel region and doped with an impurity. Herein, the impurity
corresponds to a kind of thin film transistor, such as, for
example, an N-type impurity or a P-type impurity. The semiconductor
layer 131 includes the driving semiconductor layer 131a formed in
the driving thin film transistor T1, the switching semiconductor
layer 131b formed in the switching thin film transistor T2, the
compensation semiconductor layer 131c formed in the compensation
thin film transistor T3, the initialization semiconductor layer
131d formed in the initialization thin film transistor T4, the
operation control semiconductor layer 131e formed in the operation
control thin film transistor T5, the light emission control
semiconductor layer 131f formed in the light emission control thin
film transistor T6, and a bypass semiconductor layer 131g formed in
the bypass thin film transistor T7.
[0158] The driving thin film transistor T1 includes the driving
semiconductor layer 131a, the driving gate electrode 125a, the
driving source electrode 176a, and the driving drain electrode
177a. The driving semiconductor layer 131a is bent, and includes a
plurality of first extension portions 31 extending in a first
direction, a plurality of second extension portions 32 extending in
a second direction that is different from the first direction, and
a plurality of bent portions 33 coupling respective ones of the
first extension portions 31 and the second extension portions 32.
Accordingly, the driving semiconductor layer 131a may be in a
zigzag form. The driving semiconductor layer 131a shown in FIGS. 2
and 3 includes three first extension portions 31, two second
extension portions 32, and four bent portions 33. Accordingly, the
driving semiconductor layer 131a may be longitudinally in a ``
form, or in a z form.
[0159] As described above, the driving semiconductor layer 131a may
be longitudinally formed in a narrow space by forming the driving
semiconductor layer 131a including a plurality of bent portions 33.
Accordingly, since the driving channel region 131a1 of the driving
semiconductor layer 131a may be longitudinally formed, the driving
range of the gate voltage applied to the driving gate electrode
125a is broadened. Therefore, since the driving range of the gate
voltage is relatively broad, a gray level of light emitted from an
OLED can be more finely, or precisely, controlled by changing or
adjusting the magnitude of the gate voltage, and as a result, it is
possible to increase a resolution of the organic light emitting
diode display and to improve display quality.
[0160] The bypass thin film transistor T7 includes the bypass
semiconductor layer 131g, the bypass gate electrode 125g, the
bypass source electrode 176g, and the bypass drain electrode 177g.
The bypass source electrode 176g corresponds to the bypass drain
region 177g doped with the impurity in the bypass semiconductor
layer 131g, and the bypass drain electrode 177g corresponds to the
bypass drain region 177g doped with the impurity in the bypass
semiconductor layer 131g. The bypass source electrode 176g is
directly coupled to the light emission control drain region
133f.
[0161] The bypass semiconductor layer 131g is formed on the same
layer as the driving semiconductor layer 131a, the switching
semiconductor layer 131b, the light emission control semiconductor
layer 131f, and the like. The first gate insulating layer 141 is
formed on the bypass semiconductor layer 131g. The bypass gate
electrode 125g, which is a portion of the bypass control line 128,
is formed on the first gate insulating layer 141, and the second
gate insulating layer 142 is formed on the bypass gate electrode
125g and the first gate insulating layer 141.
[0162] Accordingly, the bypass thin film transistor T7 receives the
bypass signal BP from the bypass control line 128 to always turn
off the bypass transistor T7, and a portion of the driving current
Id is emitted under an off state as the bypass current Ibp through
the bypass transistor T7 to the outside. Accordingly, when the
driving current displaying the black image flows, a contrast ratio
may be improved by implementing a more precise black luminance
image.
[0163] While this disclosure has been described in connection with
what is presently considered to be practical exemplary embodiments,
it is to be understood that the invention is not limited to the
disclosed embodiments, but, on the contrary, is intended to cover
various modifications and equivalent arrangements included within
the spirit and scope of the appended claims, and their
equivalents.
DESCRIPTION OF SOME OF THE REFERENCE CHARACTERS
[0164] 31: First extension portion [0165] 32: Second extension
portion [0166] 33: Bent portion [0167] 110: Substrate [0168] 121:
Scan line [0169] 122: Prior scan line [0170] 123: Light emission
control line [0171] 124: Initialization voltage line [0172] 125a:
Driving gate electrode [0173] 125b: Switching gate electrode [0174]
131a: Driving semiconductor layer [0175] 132b: Switching
semiconductor layer [0176] 141: First gate insulating layer [0177]
142: Second gate insulating layer [0178] 171: Data line [0179] 172:
Driving voltage line
* * * * *