U.S. patent application number 16/623412 was filed with the patent office on 2021-03-04 for quantum dot organic light emitting diode display panel.
This patent application is currently assigned to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.. The applicant listed for this patent is SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.. Invention is credited to Yuanyuan LI.
Application Number | 20210066629 16/623412 |
Document ID | / |
Family ID | 1000005399751 |
Filed Date | 2021-03-04 |
United States Patent
Application |
20210066629 |
Kind Code |
A1 |
LI; Yuanyuan |
March 4, 2021 |
QUANTUM DOT ORGANIC LIGHT EMITTING DIODE DISPLAY PANEL
Abstract
A quantum dot organic light emitting diode (OLED) display panel
is disclosed. A red-and-blue mixture light source is used as an
OLED light source corresponding to a red sub-color-resist of a
color filter, and/or a green-and-blue mixture light source is used
as the OLED light source corresponding to a green sub-color-resist
of the color filter. A blue light source in a color-mixture light
source can trigger a red/green quantum dot material of a quantum
dot photo-transfer film, and the triggered light passes through the
color filter. A red/green light source in the color-mixture light
source can directly pass through the color filter, thereby
effectively improving the brightness of the quantum dot OLED
display panel and the efficiency of a display panel and prolonging
the lifetime of the display panel.
Inventors: |
LI; Yuanyuan; (Shenzhen,
CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY
TECHNOLOGY CO., LTD. |
Shenzhen |
|
CN |
|
|
Assignee: |
SHENZHEN CHINA STAR OPTOELECTRONICS
SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
Shenzhen
CN
|
Family ID: |
1000005399751 |
Appl. No.: |
16/623412 |
Filed: |
November 6, 2019 |
PCT Filed: |
November 6, 2019 |
PCT NO: |
PCT/CN2019/116040 |
371 Date: |
December 17, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/5268 20130101;
H01L 51/502 20130101; H01L 27/322 20130101 |
International
Class: |
H01L 51/50 20060101
H01L051/50; H01L 27/32 20060101 H01L027/32; H01L 51/52 20060101
H01L051/52 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 30, 2019 |
CN |
201910816773.X |
Claims
1. A quantum dot organic light emitting diode (OLED) display panel,
comprising: a color filter comprising a color resist layer and an
isolating layer covering the color resist layer, wherein the color
resist layer comprises a color resist unit, and the color resist
unit comprises a red sub-color-resist and a green sub-color-resist;
a quantum dot photo-transfer film comprising a red quantum dot
material and a green quantum dot material, wherein the red quantum
dot material is formed on the isolating layer and corresponding to
the red sub-color-resist, and the green quantum dot material is
formed on the isolating layer and corresponding to the green
sub-color-resist; and an OLED array substrate for emitting an OLED
light source, wherein the OLED light source comprises a blue light
source and a color-mixture light source, wherein the color-mixture
light source is disposed corresponding to the red sub-color-resist
or the green sub-color-resist and consists of the blue light source
and a light source whose a color corresponds to the red
sub-color-resist or the green sub-color-resist; wherein the OLED
array substrate is of a top-emissive structure, and the OLED array
substrate, the quantum dot photo-transfer film, and the color
filter are sequentially arranged along a light-out direction; and
wherein a sub-color-resist and a corresponding light source define
a sub-pixel on the quantum dot OLED display panel, and spectrums of
the color filter, quantum dot photoluminescence, and the OLED light
source which correspond to the same sub-pixel overlap with each
other.
2. The quantum dot OLED display panel of claim 1, wherein the
color-mixture light source consists of the blue light source and a
red light source and is disposed corresponding to the red
sub-color-resist; or the color-mixture light source consists of the
blue light source and a green light source and is disposed
corresponding to the green sub-color-resist.
3. The quantum dot OLED display panel of claim 1, wherein the
color-mixture light source comprises: a red-and-blue mixture light
source consisting of the blue light source and a red light source,
wherein the red-and-blue mixture light source is disposed
corresponding to the red sub-color-resist; and a green-and-blue
mixture light source consisting of the blue light source and a
green light source, wherein the green-and-blue mixture light source
is disposed corresponding to the green sub-color-resist.
4. The quantum dot OLED display panel of claim 1, wherein the
quantum dot photo-transfer film comprises an organic protective
layer configured to limit film-forming regions of the red quantum
dot material and the green quantum dot material.
5. The quantum dot OLED display panel of claim 1, wherein the
quantum dot photo-transfer film is formed on the color resist layer
through an inkjet printing method.
6. The quantum dot OLED display panel of claim 1, wherein the red
quantum dot material is formed on the isolating layer and
corresponding to the red sub-color-resist through an inkjet
printing method, and the green quantum dot material is formed on
the isolating layer and corresponding to the green sub-color-resist
through the inkjet printing method.
7. The quantum dot OLED display panel of claim 1, wherein the color
resist unit further comprises a blue sub-color-resist, wherein in
the quantum dot photo-transfer film, a blue quantum dot material,
light-scattering particles, or a blank are formed corresponding to
the blue sub-color-resist, and wherein the blue light source is
disposed corresponding to the blue sub-color-resist.
8. The quantum dot OLED display panel of claim 1, wherein the color
resist unit further comprises a blank region, wherein in the
quantum dot photo-transfer film, a blue quantum dot material,
light-scattering particles, or a blank are formed corresponding to
the blank region, and wherein the blue light source is disposed
corresponding to the blank region.
9. A quantum dot organic light emitting diode (OLED) display panel,
comprising: a color filter comprising a color resist layer, wherein
the color resist layer comprises a color resist unit, and the color
resist unit comprises a red sub-color-resist and a green
sub-color-resist; a quantum dot photo-transfer film comprising a
red quantum dot material and a green quantum dot material, wherein
the red quantum dot material is formed corresponding to the red
sub-color-resist, and the green quantum dot material is formed
corresponding to the green sub-color-resist; and an OLED array
substrate for emitting an OLED light source, wherein the OLED light
source comprises a blue light source and a color-mixture light
source, wherein the color-mixture light source is disposed
corresponding to the red sub-color-resist or the green
sub-color-resist and consists of the blue light source and a light
source whose a color corresponds to the red sub-color-resist or the
green sub-color-resist.
10. The quantum dot OLED display panel of claim 9, wherein a
sub-color-resist and a corresponding light source define a
sub-pixel on the quantum dot OLED display panel, and spectrums of
the color filter, quantum dot photoluminescence, and the OLED light
source which correspond to the same sub-pixel overlap with each
other.
11. The quantum dot OLED display panel of claim 9, wherein the
color-mixture light source consists of the blue light source and a
red light source and is disposed corresponding to the red
sub-color-resist; or the color-mixture light source consists of the
blue light source and a green light source and is disposed
corresponding to the green sub-color-resist.
12. The quantum dot OLED display panel of claim 9, wherein the
color-mixture light source comprises: a red-and-blue mixture light
source consisting of the blue light source and a red light source,
wherein the red-and-blue mixture light source is disposed
corresponding to the red sub-color-resist; and a green-and-blue
mixture light source consisting of the blue light source and a
green light source, wherein the green-and-blue mixture light source
is disposed corresponding to the green sub-color-resist.
13. The quantum dot OLED display panel of claim 9, wherein the OLED
array substrate is of a top-emissive structure, and the OLED array
substrate, the quantum dot photo-transfer film, and the color
filter are sequentially arranged along a light-out direction.
14. The quantum dot OLED display panel of claim 9, wherein the
quantum dot photo-transfer film comprises an organic protective
layer configured to limit film-forming regions of the red quantum
dot material and the green quantum dot material.
15. The quantum dot OLED display panel of claim 9, wherein the
quantum dot photo-transfer film is formed on the color resist layer
through an inkjet printing method.
16. The quantum dot OLED display panel of claim 9, wherein the
color filter comprises an isolating layer covering the color resist
layer; and wherein the red quantum dot material is formed on the
isolating layer and corresponding to the red sub-color-resist, and
the green quantum dot material is formed on the isolating layer and
corresponding to the green sub-color-resist.
17. The quantum dot OLED display panel of claim 16, wherein the red
quantum dot material is formed on the isolating layer and
corresponding to the red sub-color-resist through an inkjet
printing method, and the green quantum dot material is formed on
the isolating layer and corresponding to the green sub-color-resist
through the inkjet printing method.
18. The quantum dot OLED display panel of claim 9, wherein the
color resist unit further comprises a blue sub-color-resist,
wherein in the quantum dot photo-transfer film, a blue quantum dot
material, light-scattering particles, or a blank are formed
corresponding to the blue sub-color-resist, and wherein the blue
light source is disposed corresponding to the blue
sub-color-resist.
19. The quantum dot OLED display panel of claim 9, wherein the
color resist unit further comprises a blank region, wherein in the
quantum dot photo-transfer film, a blue quantum dot material,
light-scattering particles, or a blank are formed corresponding to
the blank region, and wherein the blue light source is disposed
corresponding to the blank region.
Description
BACKGROUND OF DISCLOSURE
1. Field of Disclosure
[0001] The present disclosure relates to the field of display
technology, and more particularly, to a quantum dot organic light
emitting diode (OLED) display panel which can improve the
brightness and the lifetime of a display panel.
2. Description of Related Art
[0002] With the fast development of the display technology, a high
color gamut becomes an important development direction. The high
color gamut means an even more colorful display picture with even
stronger color performance. The quantum dot (QD) display technology
belongs to an inventive semiconductor nanometer crystal technology
and can accurately transmit light, highly improving a color gamut
value and a view angle of a display screen to have even purer and
colorful colors and even stronger color performance. Display
devices with such technology not only generate dynamic colors
having an even wider color gamut but also display a true color
swatch in picture quality, thereby exceeding conventional backlit
technologies.
[0003] With the fast development of the organic light emitting
diode (OLED) display technology, touch products with a curved
surface and flexible display are pushed to go to the market
rapidly. Also, the related technologies are changing every day. The
OLED is a light emitting diode caused by the infusion and recovery
of carriers using an organic semiconductor material and a light
emitting material which are driven by electric fields.
[0004] A quantum dot organic light emitting diode (QD-OLED) display
panel combines OLED electroluminescence technology with QD
photo-emission technology. The QD-OLED display panel includes an
OLED array substrate for emitting a blue light, a quantum dot
photo-transfer film, and a color filter (CF). The QD-OLED display
panel uses a blue-ray OLED as a light source to trigger red/green
quantum dots in the quantum dot photo-transfer film. After
receiving the blue light, the red quantum dots are triggered to
emit red light through the color filter. After receiving the blue
light, the green quantum dots are triggered to emit green light
through the color filter. The blue light directly passes through
the color filter, and thus full-color display is formed. Because of
superior performances of a wide color gamut and a wide view angle,
the QD-OLED display panel is deemed as a potential technology of
large-sized OLED.
[0005] Because the blue-ray OLED is required to trigger quantum
dots to emit red/green light for red/green pixels and because the
rest of the blue light is filtered by the color filter, the
brightness of the red/green light is limited by the light transfer
level of quantum dots. Currently, because of the limitation of
lower efficiency of blue light, the whole brightness of the display
panel is affected, and the lifetime of the display panel is
reduced.
SUMMARY
[0006] For problems existed in conventional technologies, the
object of the present disclosure is to provide a quantum dot
organic light emitting diode (OLED) display panel which can
effectively improve the brightness and the lifetime of a display
panel.
[0007] In order to realize the above object, the present disclosure
provides a quantum dot organic light emitting diode (OLED) display
panel, including: a color filter including a color resist layer and
an isolating layer covering the color resist layer, wherein the
color resist layer includes a color resist unit, and the color
resist unit includes a red sub-color-resist and a green
sub-color-resist; a quantum dot photo-transfer film including a red
quantum dot material and a green quantum dot material, wherein the
red quantum dot material is formed on the isolating layer and
corresponding to the red sub-color-resist, and the green quantum
dot material is formed on the isolating layer and corresponding to
the green sub-color-resist; and an OLED array substrate for
emitting an OLED light source, wherein the OLED light source
includes a blue light source and a color-mixture light source,
wherein the color-mixture light source is disposed corresponding to
the red sub-color-resist or the green sub-color-resist and consists
of the blue light source and a light source whose a color
corresponds to the red sub-color-resist or the green
sub-color-resist; wherein the OLED array substrate is of a
top-emissive structure, and the OLED array substrate, the quantum
dot photo-transfer film, and the color filter are sequentially
arranged along a light-out direction; and wherein a
sub-color-resist and a corresponding light source define a
sub-pixel on the quantum dot OLED display panel, and spectrums of
the color filter, quantum dot photoluminescence, and the OLED light
source which correspond to the same sub-pixel overlap with each
other.
[0008] In order to realize the above object, the present disclosure
provides a quantum dot organic light emitting diode (OLED) display
panel, including: a color filter including a color resist layer,
wherein the color resist layer includes a color resist unit, and
the color resist unit includes a red sub-color-resist and a green
sub-color-resist; a quantum dot photo-transfer film including a red
quantum dot material and a green quantum dot material, wherein the
red quantum dot material is formed corresponding to the red
sub-color-resist, and the green quantum dot material is formed
corresponding to the green sub-color-resist; and an OLED array
substrate for emitting an OLED light source, wherein the OLED light
source includes a blue light source and a color-mixture light
source, wherein the color-mixture light source is disposed
corresponding to the red sub-color-resist or the green
sub-color-resist and consists of the blue light source and a light
source whose a color corresponds to the red sub-color-resist or the
green sub-color-resist.
[0009] The beneficial effect of the present disclosure is as
follows: a red-and-blue mixture light source is used as the OLED
light source corresponding to the red sub-color-resist of the color
filter, and/or a green-and-blue mixture light source is used as the
OLED light source corresponding to the green sub-color-resist of
the color filter. The blue light source in the color-mixture light
source can trigger a red/green quantum dot material of the quantum
dot photo-transfer film, and the triggered light passes through the
color filter. The red/green light source in the color-mixture light
source can directly pass through the color filter, thereby
effectively improving the brightness of the quantum dot OLED
display panel and the efficiency of the display panel and
prolonging the lifetime of the display panel.
BRIEF DESCRIPTION OF DRAWINGS
[0010] In order to more clearly illustrate technical solutions in
the embodiments of the present disclosure, the drawings required
for describing the embodiments will be briefly introduced below. It
is obvious that the following drawings are merely some embodiments
of the present disclosure, and a person having ordinary skill in
this field can obtain other drawings according to these drawings
under the premise of not paying creative works.
[0011] FIG. 1 is a schematic structural diagram of film layers of a
quantum dot organic light emitting diode (OLED) display panel
according to a first embodiment of the present disclosure.
[0012] FIG. 2 is a schematic diagram of a spectrum of the color
filter, a QDPL spectrum, and a spectrum of the color mixture light
source which correspond to a red sub-pixel in a quantum dot OLED
display panel according to the present disclosure.
[0013] FIG. 3 is a schematic structural diagram of film layers of a
quantum dot organic light emitting diode (OLED) display panel
according to a second embodiment of the present disclosure.
[0014] FIG. 4 is a schematic structural diagram of film layers of a
quantum dot organic light emitting diode (OLED) display panel
according to a third embodiment of the present disclosure.
DETAILED DESCRIPTION OF EMBODIMENTS
[0015] The embodiments of the present disclosure are described in
detail below, and their examples are shown in the accompanying
drawings. The same or similar elements or elements having the same
or similar functions are denoted by the same or similar reference
numerals throughout the descriptions. The following embodiments
referring to the accompanying drawings are illustrative and merely
used for explaining the present disclosure without being regarded
as a limitation to the present disclosure.
[0016] Terms "first", "second", "third" and the like (if existing)
in the specification, the claims, and the accompanying drawings are
used to distinguish similar objects instead of describing a
specific sequence or a precedence order. It should be understood
that the described objects can be exchanged in any suitable
situations. In addition, terms "include", "have" and any variations
thereof intend to cover nonexclusive inclusions.
[0017] In the present disclosure, unless specified or limited
otherwise, it should be noted that, a structure in which a first
feature is "on" or "beneath" a second feature may include an
embodiment in which the first feature directly contacts the second
feature, and may also include an embodiment in which an additional
feature is formed between the first feature and the second feature
so that the first feature does not directly contact the second
feature. Furthermore, a first feature "on", "above", or "on top of"
a second feature may include an embodiment in which the first
feature is right "on", "above", or "on top of" the second feature,
and may also include an embodiment in which the first feature is
not right "on", "above", or "on top of" the second feature, or just
means that the first feature has a sea level elevation greater than
the sea level elevation of the second feature. While first feature
"beneath", "below", or "on bottom of" a second feature may include
an embodiment in which the first feature is right "beneath",
"below", or "on bottom of" the second feature, and may also include
an embodiment in which the first feature is not right "beneath",
"below", or "on bottom of" the second feature, or just means that
the first feature has a sea level elevation less than the sea level
elevation of the second feature.
[0018] The following description provides various embodiments or
examples for implementing various structures of the present
disclosure. To simplify the description of the present disclosure,
parts and settings of specific examples are described as follows.
Certainly, they are only illustrative, and are not intended to
limit the present disclosure. Further, reference numerals and
reference letters may be repeated in different examples. This
repetition is for purposes of simplicity and clarity and does not
indicate a relationship of the various embodiments and/or the
settings. Furthermore, the present disclosure provides specific
examples of various processes and materials, however, a person
skilled in the art may be aware of applications of other processes
and/or other materials.
[0019] A quantum dot organic light emitting diode (OLED) display
panel of the present disclosure includes a color filter including a
color resist layer, wherein the color resist layer includes a color
resist unit, and the color resist unit includes a red
sub-color-resist and a green sub-color-resist; a quantum dot
photo-transfer film including a red quantum dot material and a
green quantum dot material, wherein the red quantum dot material is
formed corresponding to the red sub-color-resist, and the green
quantum dot material is formed corresponding to the green
sub-color-resist; and an OLED array substrate for emitting an OLED
light source, wherein the OLED light source includes a blue light
source and a color-mixture light source, wherein the color-mixture
light source is disposed corresponding to the red sub-color-resist
or the green sub-color-resist and consists of the blue light source
and a light source whose a color corresponds to the red
sub-color-resist or the green sub-color-resist.
[0020] In the quantum dot organic light emitting diode (OLED)
display panel of the present disclosure, one or both of the OLED
light sources corresponding to the red sub-color-resist and the
green sub-color-resist of the color filter can be used with the
color-mixture light source. When a red-and-blue mixture light
source (i.e., a purple light source) corresponding to the red
sub-color-resist of the color filter passes through the red quantum
dot material of the quantum dot photo-transfer film and the red
sub-color-resist of the color filter, the blue light source in the
red-and-blue mixture light source can trigger the red quantum dot
material to emit red light, and the triggered red light passes
through the red sub-color-resist on the one hand; on the other
hand, a red light source in the red-and-blue mixture light source
can directly pass through the red sub-color-resist. When a
green-and-blue mixture light source (i.e., a cyan light source)
corresponding to the green sub-color-resist of the color filter
passes through the green quantum dot material of the quantum dot
photo-transfer film and the green sub-color-resist of the color
filter, the blue light source in the green-and-blue mixture light
source can trigger the green quantum dot material to emit green
light, and the triggered green light passes through the green
sub-color-resist on the one hand; on the other hand, a green light
source in the green-and-blue mixture light source can directly pass
through the red sub-color-resist. Thus, the brightness of the
quantum dot OLED display panel and the efficiency of the display
panel can be effectively improved, and the lifetime of the display
panel is prolonged.
[0021] In the quantum dot organic light emitting diode (OLED)
display panel of the present disclosure, the color resist unit
further includes a blue sub-color-resist or a blank region. In the
quantum dot photo-transfer film, a blue quantum dot material,
light-scattering particles, or a blank are formed corresponding to
the blue sub-color-resist (or the blank region). The blue light
source corresponding to the blue sub-color-resist (or the blank
region) of the color filter can directly pass through the blue
sub-color-resist (or the blank region) and can also trigger the
blue quantum dot material to emit blue light through the blue
sub-color-resist (or the blank region) and can further pass through
the blue sub-color-resist (or the blank region) through the
improved light diffusion ability caused by the light-scattering
particles, further improving the brightness of the quantum dot OLED
display panel.
[0022] Preferably, a sub-color-resist and a corresponding light
source define a sub-pixel on the quantum dot OLED display panel. A
spectrum of the color filter, a spectrum of quantum dot
photoluminescence (QDPL), and a spectrum of the OLED light source
which correspond to the same sub-pixel basically overlap with each
other, thereby improving light transparency and the brightness of
the display panel. For instance, a red sub-color-resist and a
corresponding red-and-blue mixture light source (or the blue light
source) define a red sub-pixel on the quantum dot OLED display
panel. A spectrum of the color filter (i.e., a spectrum of the red
sub-color-resist), a QDPL spectrum (i.e., a spectrum of the red
quantum dot material), and a spectrum of the OLED light source
(i.e., a spectrum of the blue light triggering the red quantum dot
material, or a spectrum of the red-and-blue mixture light source)
which correspond to the red sub-pixel are guaranteed to overlap
with each other to the greatest extent. A green sub-color-resist
and a corresponding green-and-blue mixture light source (or the
blue light source) define a green sub-pixel. A spectrum of the
color filter (i.e., a spectrum of the green sub-color-resist), a
QDPL spectrum (i.e., a spectrum of the green quantum dot material),
and a spectrum of the OLED light source (i.e., a spectrum of the
blue light triggering the green quantum dot material, or a spectrum
of the green-and-blue mixture light source) which correspond to the
green sub-pixel are guaranteed to overlap with each other to the
greatest extent.
[0023] Preferably, the quantum dot photo-transfer film is formed on
the color resist layer through an inkjet printing method, which can
effectively improve product yield of the OLED display panel and can
reduce production costs simultaneously.
[0024] Preferably, the OLED array substrate is of a top-emissive
structure, and the OLED array substrate, the quantum dot
photo-transfer film, and the color filter are sequentially arranged
along a light-out direction. The OLED array substrate is controlled
by a thin-film transistor (TFT) array. The TFT array and metal
traces are disposed on a substrate. It is because the top-emissive
structure is used to emit light that the light is emitted above the
OLED array substrate, causing the TFT array and the metal traces on
the substrate not to affect a light-out area of a light source.
Compared with a bottom-emissive panel, a top-emissive panel with
the same brightness has a lower working voltage of OLED and can
have a longer lifetime.
[0025] Please refer to FIG. 1, which is a schematic structural
diagram of film layers of a quantum dot organic light emitting
diode (OLED) display panel according to a first embodiment of the
present disclosure. In the embodiment, the quantum dot OLED display
panel includes a color filter 11, a quantum dot photo-transfer film
12, and an OLED array substrate 13 sequentially arranged along a
light-out direction.
[0026] The color filter 11 includes a glass substrate 110 and a
color resist layer sequentially arranged along the light-out
direction. The color resist layer is disposed on one side of the
glass substrate 110, away from the light-out direction. The color
resist layer includes a color resist unit, and the color resist
unit includes a red sub-color-resist 111, a green sub-color-resist
112, and a blank region 113 (shown as a dotted box in the figure).
Preferably, the red sub-color-resist 111, the green
sub-color-resist 112, and the blank region 113 are separated by a
black matrix (BM) 114. Preferably, the color filter 11 further
includes an isolating layer 115 covering the red sub-color-resist
111, the green sub-color-resist 112, the blank region 113, and the
black matrix 114. The isolating layer 115 is used to isolate the
color filter 11 and the quantum dot photo-transfer film 12, and to
make the spread of printing materials even better when quantum dot
materials of the quantum dot photo-transfer film 12 are printed. In
other embodiments, a blue sub-color-resist can be disposed in the
blank region 113.
[0027] In the quantum dot photo-transfer film 12, a red quantum dot
material QD-R 121 is formed corresponding to the red
sub-color-resist 111, a green quantum dot material QD-G 122 is
formed corresponding to the green sub-color-resist 112, and a blank
is formed corresponding to the blank region 113. The red quantum
dot material 121 is formed on the isolating layer 115 and
corresponding to the red sub-color-resist 111 through an inkjet
printing method, and the green quantum dot material 122 is formed
on the isolating layer 115 and corresponding to the green
sub-color-resist 112 through the inkjet printing method. Using the
inkjet printing method can effectively improve product yield of the
OLED display panel and can reduce production costs simultaneously.
The spectrum of the above quantum dot materials can be adjusted
using sizes of quantum dots. The red/green quantum dot materials
may be the same. The above quantum dot materials includes, but not
limited to, CdS, CdSe, ZnCdS, ZnCdSe, InP, or one or more
perovskite materials.
[0028] In other embodiments, in the quantum dot photo-transfer film
12, a blue quantum dot material QD-B or light-scattering particles
can also be formed corresponding to the blank region 113. In order
to improve light diffusion ability, the light-scattering particles
can be mixed in the film layers of the quantum dot photo-transfer
film 12, and can also be located in a resinous system outside the
quantum dot photo-transfer film 12. The materials of the
light-scattering particles are organic or inorganic materials. The
light-scattering particles have nanometer-scale or micrometer-scale
sizes. The light-scattering particles can have isotropy or
anisotropy.
[0029] Preferably, the quantum dot photo-transfer film 12 includes
an organic protective layer 124 configured to limit film-forming
regions of the red quantum dot material 121 and the green quantum
dot material 122. Specifically, the organic protective layer 124
can be made of transparent or non-transparent resin materials. When
the organic protective layer 124 is made of non-transparent resin
materials, the red quantum dot material 121 is limited to
correspond to the red sub-color-resist 111, the green quantum dot
material 122 is limited to correspond to the green sub-color-resist
112, a blank is formed corresponding to the blank region 113, and
other regions are non-transparent to block light.
[0030] An OLED light source emitted from the OLED array substrate
13 includes a blue light source (shown as the alphabet B in the
figure) and a red-and-blue mixture light source (shown as the
alphabets R and B in the figure) consisting of the blue light
source and a red light source. The red-and-blue mixture light
source is disposed corresponding to the red sub-color-resist 111 of
the color filter 11. The blue light source in the red-and-blue
mixture light source is used to trigger the red quantum dot
material 121 of the quantum dot photo-transfer film 12 to emit red
light, and the red light passes through the red sub-color-resist
111. The red light source in the red-and-blue mixture light source
can directly pass through the red sub-color-resist 111. Thus, the
brightness of the display panel is improved.
[0031] The OLED array substrate 13 is of a top-emissive structure
and includes a top-emissive OLED device 132, a thin film
encapsulation (TFE) 133, and a TFT array substrate 131 having a
pixel definition layer 1311 which are sequentially arranged along a
light-out direction. The TFTs of the TFT array substrate 131 can be
indium gallium zinc oxide (IGZO) TFTs or low temperature
poly-silicon (LTPS) TFTs. The pixel definition layer 1311 is used
to define and limit a location of the top-emissive OLED device 132,
and further to define and limit a size and a location of each
sub-pixel. The top-emissive OLED device 132 includes a reflective
anode, an OLED functional layer, an OLED light-emitting layer, a
transparent cathode, and a light-capturing layer. The OLED
functional layer includes one or more of a hole injection layer, a
hole transport layer, an electronic transport layer, and an
electronic injection layer. The top-emissive OLED device 132 can
include one or more layers of the OLED functional layer and the
OLED light-emitting layer. The reflective anode can be made of
ITO/Ag/ITO materials. The transparent cathode can be made of IZO
and Mg/Ag materials. The thin film encapsulation 133 is formed by
overlapped inorganic and organic materials. At least one layer of
inorganic encapsulation material is made.
[0032] Please refer to FIG. 2, which is a schematic diagram of a
spectrum of the color filter, a QDPL spectrum, and a spectrum of
the color mixture light source which correspond to the red
sub-pixel in a quantum dot OLED display panel according to the
present disclosure. As shown in FIG. 2, a spectrum of the color
filter (i.e., a spectrum of the red sub-color-resist), a QDPL
spectrum (i.e., a spectrum of the red quantum dot material), and a
spectrum of the OLED light source (i.e., a spectrum of the
red-and-blue mixture light source) which correspond to the red
sub-pixel basically overlap with each other. Thus, the brightness
of the display panel and light transparency are improved.
[0033] Please refer to FIG. 3, which is a schematic structural
diagram of film layers of a quantum dot organic light emitting
diode (OLED) display panel according to a second embodiment of the
present disclosure. A difference that exists between the present
embodiment and the embodiment as shown in FIG. 1 is that an OLED
light source emitted from the OLED array substrate 13b includes a
blue light source (shown as the alphabet B in the figure) and a
green-and-blue mixture light source (shown as the alphabets G and B
in the figure) consisting of the blue light source and a green
light source. The green-and-blue mixture light source is disposed
corresponding to the green sub-color-resist 112 of the color filter
11. The blue light source in the green-and-blue mixture light
source is used to trigger the green quantum dot material 122 of the
quantum dot photo-transfer film 12 to emit green light, and the
green light passes through the green sub-color-resist 112. The
green light source in the green-and-blue mixture light source can
directly pass through the green sub-color-resist 112. Thus, the
brightness of the display panel is improved. Specifically, the
green-and-blue mixture light source is of an overlapped
top-emissive structure with a green light and a blue light.
[0034] Preferably, a spectrum of the color filter (i.e., a spectrum
of the green sub-color-resist), a QDPL spectrum (i.e., a spectrum
of the green quantum dot material), and a spectrum of the OLED
light source (i.e., a spectrum of the green-and-blue mixture light
source) which correspond to the green sub-pixel are guaranteed to
overlap with each other to the greatest extent. Thus, the
brightness of the display panel and light transparency are
improved.
[0035] Please refer to FIG. 4, which is a schematic structural
diagram of film layers of a quantum dot organic light emitting
diode (OLED) display panel according to a third embodiment of the
present disclosure. A difference that exists between the present
embodiment and the embodiment as shown in FIG. 1 is that an OLED
light source emitted from the OLED array substrate 13c includes a
blue light source (shown as the alphabet B in the figure), a
red-and-blue mixture light source (shown as the alphabets R and B
in the figure) consisting of the blue light source and a red light
source, and a green-and-blue mixture light source (shown as the
alphabets G and B in the figure) consisting of the blue light
source and a green light source. The red-and-blue mixture light
source is disposed corresponding to the red sub-color-resist 111 of
the color filter 11. The green-and-blue mixture light source is
disposed corresponding to the green sub-color-resist 112 of the
color filter 11. The blue light source in the red-and-blue mixture
light source is used to trigger the red quantum dot material 121 of
the quantum dot photo-transfer film 12 to emit red light, and the
red light passes through the red sub-color-resist 111. The red
light source in the red-and-blue mixture light source can directly
pass through the red sub-color-resist 111. The blue light source in
the green-and-blue mixture light source is used to trigger the
green quantum dot material 122 of the quantum dot photo-transfer
film 12 to emit green light, and the green light passes through the
green sub-color-resist 112. The green light source in the
green-and-blue mixture light source can directly pass through the
green sub-color-resist 112. Thus, the brightness of the display
panel is improved. Specifically, the red-and-blue mixture light
source is of an overlapped top-emissive structure with a red light
and a blue light, and the green-and-blue mixture light source is of
an overlapped top-emissive structure with a green light and a blue
light.
[0036] Further, the difference that exists between the present
embodiment and the embodiment as shown in FIG. 1 is that a color
resist unit of the color filter 11c includes a red sub-color-resist
111, a green sub-color-resist 112, and a blue sub-color-resist
113c. The red sub-color-resist 111, the green sub-color-resist 112,
and the blue sub-color-resist 113c are separated by a black matrix
114. An isolating layer 115c covers the red sub-color-resist 111,
the green sub-color-resist 112, the blue sub-color-resist 113c, and
the black matrix 114. Correspondingly, in the quantum dot
photo-transfer film 12c, a blue quantum dot material QD-B 123c is
formed corresponding to the blue sub-color-resist 113c. In other
embodiments, in the quantum dot photo-transfer film 12c,
light-scattering particles or a blank can also be formed
corresponding to the blue sub-color-resist 113c.
[0037] Preferably, a spectrum of the color filter (i.e., a spectrum
of the red sub-color-resist), a QDPL spectrum (i.e., a spectrum of
the red quantum dot material), and a spectrum of the OLED light
source (i.e., a spectrum of the red-and-blue mixture light source)
which correspond to the red sub-pixel are guaranteed to overlap
with each other to the greatest extent. A spectrum of the color
filter (i.e., a spectrum of the green sub-color-resist), a QDPL
spectrum (i.e., a spectrum of the green quantum dot material), and
a spectrum of the OLED light source (i.e., a spectrum of the
green-and-blue mixture light source) which correspond to the green
sub-pixel are guaranteed to overlap with each other to the greatest
extent. A spectrum of the color filter (i.e., a spectrum of the
blue sub-color-resist), a QDPL spectrum (i.e., a spectrum of the
blue quantum dot material), and a spectrum of the OLED light source
(i.e., a spectrum of a blue light) which correspond to the blue
sub-pixel are guaranteed to overlap with each other to the greatest
extent. Thus, the brightness of the display panel and light
transparency are improved.
[0038] The industrial applicability of the present disclosure is
that, topics of the present disclosure can be manufactured and
used, and thus the industrial applicability is realized.
* * * * *