U.S. patent application number 15/720812 was filed with the patent office on 2018-01-25 for semiconductor device having multiwork function gate patterns.
The applicant listed for this patent is SAMSUNG ELECTRONICS CO., LTD.. Invention is credited to Sangjin HYUN, Hoonjoo NA, Moonkyu PARK, Jaeyeol SONG.
Application Number | 20180026112 15/720812 |
Document ID | / |
Family ID | 57452097 |
Filed Date | 2018-01-25 |
United States Patent
Application |
20180026112 |
Kind Code |
A1 |
PARK; Moonkyu ; et
al. |
January 25, 2018 |
SEMICONDUCTOR DEVICE HAVING MULTIWORK FUNCTION GATE PATTERNS
Abstract
A semiconductor device includes a semiconductor substrate having
a first area and a second area, and a first gate pattern on the
first area and a second gate pattern on the second area. The first
gate pattern includes a first gate insulating pattern on the first
area, a first gate barrier pattern on the first gate insulating
pattern, and a first work function metal pattern on the first gate
barrier pattern. The second gate pattern includes a second gate
insulating pattern on the second area, a second gate barrier
pattern on the second gate insulating pattern, and a second work
function metal pattern on the second gate barrier pattern. The
first gate barrier pattern includes a metal material different than
the second gate barrier pattern.
Inventors: |
PARK; Moonkyu; (Hwaseong-si,
KR) ; NA; Hoonjoo; (Hwaseong-si, KR) ; SONG;
Jaeyeol; (Seoul, KR) ; HYUN; Sangjin;
(Suwon-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG ELECTRONICS CO., LTD. |
Suwon-si |
|
KR |
|
|
Family ID: |
57452097 |
Appl. No.: |
15/720812 |
Filed: |
September 29, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15017789 |
Feb 8, 2016 |
9786759 |
|
|
15720812 |
|
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Current U.S.
Class: |
257/369 |
Current CPC
Class: |
H01L 29/517 20130101;
H01L 21/823821 20130101; H01L 29/42364 20130101; H01L 21/823842
20130101; H01L 27/0924 20130101; H01L 21/82345 20130101; H01L
29/66545 20130101; H01L 29/42376 20130101; H01L 29/785 20130101;
H01L 27/092 20130101; H01L 29/4966 20130101 |
International
Class: |
H01L 29/49 20060101
H01L029/49; H01L 21/8238 20060101 H01L021/8238; H01L 29/78 20060101
H01L029/78; H01L 29/423 20060101 H01L029/423; H01L 27/092 20060101
H01L027/092; H01L 21/8234 20060101 H01L021/8234 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 4, 2015 |
KR |
10-2015-0079367 |
Claims
1. A semiconductor device comprising: a semiconductor substrate
having a first conductivity type transistor area, the first
conductivity type transistor area including a first area and a
second area; and a first gate pattern on the first area and a
second gate pattern on the second area, wherein the first gate
pattern includes a first gate insulating pattern on the first area,
a first gate barrier pattern on the first gate insulating pattern,
and a first work function metal pattern on the first gate barrier
pattern, the second gate pattern includes a second gate insulating
pattern on the second area, a second gate barrier pattern on the
second gate insulating pattern, and a second work function metal
pattern on the second gate barrier pattern the first gate barrier
pattern includes a metal material different than the second gate
barrier pattern, and the first gate barrier pattern and the second
gate barrier pattern each comprise multi-layer patterns, and a
layer pattern of the first gate barrier pattern includes different
metal materials than a corresponding layer pattern of the second
gate barrier pattern.
2. The semiconductor device of claim 1, wherein the multi-layer
patterns of the first gate barrier pattern include a first lower
gate barrier pattern on the first gate insulating pattern, a first
intermediate gate barrier pattern on the first lower gate barrier
pattern, and a first upper gate barrier pattern on the first
intermediate gate barrier pattern, and the multi-layer patterns of
the second gate barrier pattern include a second lower gate barrier
pattern on the second gate insulating pattern, a second
intermediate gate barrier pattern on the second lower gate barrier
pattern, and a second upper gate barrier pattern on the second
intermediate gate barrier pattern.
3. The semiconductor device of claim 2, wherein the first lower
gate barrier pattern and the second lower gate barrier pattern
include different metal materials, the first intermediate gate
barrier pattern and the second intermediate gate barrier pattern
include a same metal material, and the first upper gate barrier
pattern and the second upper gate barrier pattern include a same
metal material.
4. The semiconductor device of claim 2, wherein the first lower
gate barrier pattern and the second lower gate barrier pattern
include a same metal material, the first intermediate gate barrier
pattern and the second intermediate gate barrier pattern include a
same metal material, and the first upper gate barrier pattern and
the second upper gate barrier pattern include different metal
materials.
5. The semiconductor device of claim 2, wherein the first lower
gate barrier pattern and the second lower gate barrier pattern
include a same metal material, the first intermediate gate barrier
pattern and the second intermediate gate barrier pattern include
different metal materials, and the first upper gate barrier pattern
and the second upper gate barrier pattern include a same metal
material.
6. The semiconductor device of claim 1, wherein the semiconductor
substrate further comprises a second conductivity type transistor
area including a third area and a fourth area.
7. The semiconductor device of claim 6, further comprising: a third
gate pattern on the third area, the third gate pattern including a
third gate insulating pattern on the third area, a third gate
barrier pattern on the third gate insulating pattern, and a third
work function metal pattern on the third gate barrier pattern; and
a fourth gate pattern on the fourth area, the fourth gate pattern
including a fourth gate insulating pattern on the fourth area, a
fourth gate barrier pattern on the fourth gate insulating pattern,
and a fourth work function metal pattern on the fourth gate barrier
pattern, wherein the third gate barrier pattern includes a metal
material different than the fourth gate barrier pattern.
8. The semiconductor device of claim 1, wherein the first gate
insulating pattern, the second gate insulating pattern, the first
gate barrier pattern, the second gate barrier pattern, the first
work function metal pattern and the second work function metal
pattern have U-shapes.
9. The semiconductor device of claim 8, further comprising: gate
spacers on outer side surfaces of the first gate pattern and the
second gate pattern; and an interlayer insulating layer configured
to cover outer side surfaces of the gate spacers and a surface of
the semiconductor substrate.
10. The semiconductor device of claim 1, wherein the first area
includes a first active region having a first fin configured to
protrude from a surface of the semiconductor substrate in a
direction perpendicular to the semiconductor substrate, the second
area includes a second active region having a second fin configured
to protrude from the surface of the semiconductor substrate in the
direction perpendicular to the semiconductor substrate, the first
gate pattern covers an upper surface and side surfaces of the first
fin, and the second gate pattern covers an upper surface and side
surfaces of the second fin.
11. The semiconductor device of claim 1, wherein the first gate
barrier pattern and the second gate barrier pattern include at
least one of titanium nitride (TiN), tantalum nitride (TaN),
titanium oxynitride (TiON), tantalum oxynitride (TaON), titanium
aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN),
titanium silicon nitride (TiSiN), titanium aluminum oxynitride
(TiAlON), tantalum aluminum oxynitride (TaAlON), and titanium
silicon oxynitride (TiSiON).
12. The semiconductor device of claim 1, wherein the first work
function metal pattern and the second work function pattern include
at least one of titanium aluminum (TiAl), titanium aluminum oxide
(TiAlO), titanium aluminum carbide (TiAlC), titanium aluminum
nitride (TiAlN), titanium aluminum oxynitride (TiAlON), titanium
aluminum carbonitride (TiAlCN), titanium aluminum oxycarbonitride
(TiAlOCN), and a combination thereof.
13. The semiconductor device of claim 1, wherein the first gate
pattern further includes a first barrier capping pattern on the
first work function metal pattern and a first gate electrode
pattern on the first barrier capping pattern and wherein the second
gate pattern further includes a second barrier capping pattern on
the second work function metal pattern and a second gate electrode
pattern on the second barrier capping pattern
14. A semiconductor device comprising: a semiconductor substrate
having a first area in which a first NMOS transistor is formed, a
second area in which a second NMOS transistor having a different
threshold voltage than the first NMOS transistor is formed, a third
area in which a first PMOS transistor is formed, and a fourth area
in which a second PMOS transistor having a different threshold
voltage from the first PMOS transistor is formed; and a first NMOS
gate pattern on the first area, a second NMOS gate pattern on the
second area, a first PMOS gate pattern on the third area, and a
second PMOS gate pattern on the fourth area, wherein a first NMOS
gate barrier pattern of the first NMOS gate pattern and a second
NMOS gate barrier pattern of the second NMOS gate pattern include
different metal materials from each other, a first PMOS gate
barrier pattern of the first PMOS gate pattern and a second PMOS
gate barrier pattern of the second PMOS gate pattern include
different metal materials from each other, and the first, second,
third and fourth areas each include an active region having a fin
configured to protrude from a surface of the semiconductor
substrate in a direction perpendicular to the semiconductor
substrate, and the first NMOS gate pattern, the second NMOS gate
pattern, the first PMOS gate pattern and the second PMOS gate
pattern respectively cover an upper surface and side surfaces of
the fins in the first, second, third and fourth areas.
15. The semiconductor device of claim 14, wherein the first NMOS
transistor has a threshold voltage lower than the second NMOS
transistor, and the first PMOS transistor has a threshold voltage
lower than the second PMOS transistor, and wherein the first PMOS
gate barrier pattern and the second NMOS gate barrier pattern
include a same metal material, and the second PMOS transistor and
the first NMOS transistor include a same metal material.
16. A semiconductor device comprising: a semiconductor substrate
including a first area having a first NMOS transistor and a second
area having a second NMOS transistor that has a different threshold
voltage than the first NMOS transistor; a first gate insulating
pattern on the first area and a second gate insulating pattern on
the second area; a first gate barrier pattern on the first gate
insulating pattern and a second gate barrier pattern on the second
gate insulating pattern; a first work function metal pattern on the
first gate barrier pattern and a second work function metal pattern
on the second gate barrier pattern; and a first barrier capping
pattern on the first work function metal pattern and a second
barrier capping pattern on the second work function pattern,
wherein the first gate barrier pattern includes a metal material
having a different work function than the second gate barrier
pattern, and the first gate barrier pattern and the second gate
barrier pattern each comprise multi-layer patterns, and a layer
pattern of the first gate barrier pattern includes different metal
materials than a corresponding layer pattern of the second gate
barrier pattern.
17. The semiconductor device of claim 16, wherein the first barrier
capping pattern and the second barrier capping pattern include a
same metal material.
18. The semiconductor device of claim 16, wherein the first barrier
capping pattern and the second barrier capping pattern include at
least one of titanium nitride (TiN), tantalum nitride (TaN),
titanium oxynitride (TiON), tantalum oxynitride (TaON), titanium
aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN),
titanium silicon nitride (TiSiN), titanium aluminum oxynitride
(TiAlON), tantalum aluminum oxynitride (TaAlON), and titanium
silicon oxynitride (TiSiON).
19. The semiconductor device of claim 16, wherein a vertical
thickness of the first gate barrier pattern is substantially the
same as a vertical thickness of the second gate barrier
pattern.
20. The semiconductor device of claim 16, further comprising: a
first gate electrode pattern on the first barrier capping pattern;
and a second gate electrode pattern on the second barrier capping
pattern.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This is a Continuation Application of U.S. application Ser.
No. 15/017, filed Feb. 8, 2016, which claims priority under 35
U.S.C. .sctn.119 is made to Korean Patent Application No.
10-2015-0079367 filed on Jun. 4, 2015, the entire contents of which
are hereby incorporated by reference.
BACKGROUND
[0002] The present inventive concept relates to a semiconductor
device having multiwork function gate patterns and a method of
fabricating the same.
[0003] In view of the requirements of high integration and high
operation speed, gate insulating layers and gate electrodes of CMOS
semiconductor devices are required to be ultra-thin. In order to
overcome limitations on the physical dimensions of ultra-thin gate
insulating layers and manufacturing processes thereof, high-k gate
insulating layers have been used. In order to control the work
function of semiconductor devices having high-k gate insulating
layers and metal gate structures, the thickness of barrier layers
of the metal gate structures have been controlled. However, typical
methods of controlling the thickness of barrier layers have become
virtually impossible to carry out due to the reduced size of
semiconductor devices.
SUMMARY
[0004] Embodiments of the inventive concept provide a semiconductor
device having multi-work function gate patterns.
[0005] Embodiments of the inventive concept provide a method of
fabricating a semiconductor device having multi-work function gate
patterns.
[0006] Embodiments of the inventive concept provide a semiconductor
device including a semiconductor substrate having a first
conductivity type transistor area including a first area and a
second area, and a first gate pattern on the first region and a
second gate pattern on the second region. The first gate pattern
includes a first gate insulating pattern on the first area, a first
gate barrier pattern on the first gate insulating pattern, and a
first work function metal pattern on the first gate barrier
pattern. The second gate pattern may include a second gate
insulating pattern on the second area, a second gate barrier
pattern on the second gate insulating pattern, and a second work
function metal pattern on the second gate barrier pattern. The
first gate barrier pattern includes a different metal material than
the second gate barrier pattern.
[0007] Embodiments of the inventive concept provide a semiconductor
device including a semiconductor substrate having a first area in
which a first NMOS transistor is formed, a second area in which a
second NMOS transistor having a different threshold voltage than
the first NMOS transistor is formed, a third area in which a first
PMOS transistor is formed, and a fourth area in which a second PMOS
transistor having a different threshold voltage than the first PMOS
transistor is formed, and a first NMOS gate pattern on the first
area, a second NMOS gate pattern on the second area, a first PMOS
gate pattern on the third area, and a second PMOS gate pattern on
the fourth area. A first NMOS gate barrier pattern of the first
NMOS gate pattern includes a different metal material than a second
NMOS gate barrier pattern of the second NMOS gate pattern. A first
PMOS gate barrier pattern of the first PMOS gate pattern includes a
different metal material than a second PMOS gate barrier pattern of
the second PMOS gate pattern.
[0008] Embodiments of the inventive concept provide a semiconductor
device including a semiconductor substrate including a first area
having a first NMOS transistor and a second area having a second
NMOS transistor which has a different threshold voltage than the
first NMOS transistor, a first gate insulating pattern on the first
area and a second gate insulating pattern on the second area, a
first gate barrier pattern on the first gate insulating pattern and
a second gate barrier pattern on the second gate insulating
pattern, a first work function metal pattern on the first gate
barrier pattern and a second work function metal pattern on the
second gate barrier pattern, and a first barrier capping pattern on
the first work function metal pattern and a second barrier capping
pattern on the second work function metal pattern. The first gate
barrier pattern includes a metal material having a different work
function than the second gate barrier pattern.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The foregoing and other features and advantages of the
inventive concept will be apparent from the following description
of embodiments of the inventive concept, as illustrated in the
accompanying drawings in which like reference numerals denote the
same respective parts throughout the different views. The drawings
are not necessarily to scale, emphasis instead being placed upon
illustrating the principles of the inventive concept. In the
drawings:
[0010] FIG. 1 is a layout diagram illustrating a semiconductor
device according to an embodiment of the inventive concept;
[0011] FIGS. 2A-2E, 3A-3E, and 4A-4E illustrate cross-sectional
views taken along lines I-I', II-II', III-III', IV-IV', V-V',
VI-VI', VII-VII', and VIII-VIII' of FIG. 1 for describing a
semiconductor device according to various embodiments of the
inventive concept;
[0012] FIGS. 5A-5D, 6A-6F, and 7A-7F illustrate cross-sectional
views taken along lines I-I', II-II', V-V' and VI-VI' of FIG. 1 for
describing methods of fabricating a semiconductor device according
to various embodiments of the inventive concept;
[0013] FIG. 8 is a schematic diagram illustrating a semiconductor
module, according to an embodiment of the inventive concept;
and
[0014] FIG. 9 is a schematic block diagram illustrating an
electronic system, according to an embodiment of the inventive
concept.
[0015] FIG. 10 is a schematic block diagram illustrating an
electronic system, according to an embodiment of the inventive
concept.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0016] Various embodiments of the inventive concept will now be
described more fully with reference to the accompanying drawings.
The inventive concept disclosed herein may, however, be embodied in
different forms and should not be construed as limited to the
embodiments set forth herein. Rather, these embodiments are
provided so that this disclosure is thorough and complete and fully
conveys the inventive concept to those skilled in the art.
[0017] The terminology used herein to describe embodiments of the
inventive concept is not intended to limit the scope of the
inventive concept. The articles "a," "an," and "the" are singular
in that they have a single referent; however, the use of the
singular form in the present document should not preclude the
presence of more than one referent. In other words, elements of the
inventive concept referred to in the singular form may number one
or more, unless the context clearly indicates otherwise. It will be
further understood that the terms "comprises," "comprising,"
"includes," and/or "including," when used herein, specify the
presence of stated features, integers, steps, operations, elements,
and/or components, but do not preclude the presence or addition of
one or more other features, integers, steps, operations, elements,
components, and/or groups thereof.
[0018] It should be understood that when an element or layer is
referred to as being "on," "connected to," or "coupled to" another
element or layer, it can be directly on, connected to, or coupled
to the other element or layer or intervening elements or layers may
be present. In contrast, when an element is referred to as being
"directly on," "directly connected to," or "directly coupled to"
another element or layer, there are no intervening elements or
layers present. In the following explanation, the same reference
numerals denote the same components throughout the
specification.
[0019] Spatially relative terms, such as "beneath," "below,"
"lower," "above," "upper," and the like may be used herein to
describe the relationship of one element or feature to another, as
illustrated in the drawings. It should be understood that such
descriptions are intended to encompass different orientations in
use or operation in addition to orientations depicted in the
drawings. For example, if a device is turned over, elements
described as "below" or "beneath" other elements or features would
then be oriented "above" the other elements or features. Thus, the
term "below" is intended to mean both above and below, depending
upon overall device orientation.
[0020] Embodiments are described herein with reference to
cross-sectional and/or planar illustrations that are schematic
illustrations of idealized embodiments and intermediate structures.
In the drawings, the sizes and relative sizes of layers and regions
may be exaggerated for clarity. As such, variations from the shapes
of the illustrations as a result, for example, of manufacturing
techniques and/or tolerances, are to be expected. Thus, embodiments
should not be construed as limited to the particular shapes of
regions illustrated herein but are to include deviations in shapes
that result, for example, from manufacturing. For example, an
implanted region illustrated as a rectangle will, typically, have
rounded or curved features and/or a gradient of implant
concentration at its edges rather than a binary change from
implanted to non-implanted regions. Likewise, a buried region
formed by implantation may result in some implantation in the
region between the buried region and the surface through which the
implantation takes place. Thus, the regions illustrated in the
figures are schematic in nature and their shapes are not intended
to illustrate the actual shape of a region of a device and are not
intended to limit the scope of the present inventive concept.
[0021] Like numerals refer to like elements throughout the
specification. Accordingly, the same numerals and similar numerals
can be described with reference to other drawings, even if not
specifically described in a corresponding drawing. Further, when a
numeral is not marked in a drawing, the numeral can be described
with reference to other drawings.
[0022] FIG. 1 is a layout diagram illustrating a semiconductor
device, according to an embodiment of the inventive concept.
[0023] Referring to FIG. 1, the semiconductor device according to
embodiments of the inventive concept includes a substrate 11,
active regions 20 on the substrate 11, and gate patterns 30
crossing the active regions 20. The substrate 11 includes an NMOS
area NA and a PMOS area PA. The NMOS area NA includes a first NMOS
area N1 and a second NMOS area N2. The PMOS area PA includes a
first PMOS area P1 and a second PMOS area P2. For example, the
first NMOS area N1 may include an NMOS transistor that has a low
threshold voltage, and the second NMOS area N2 may include an NMOS
transistor that has a high threshold voltage. Also, the first PMOS
area P1 may include a PMOS transistor that has a low threshold
voltage, and the second PMOS area P2 may include a PMOS transistor
that has a high threshold voltage.
[0024] FIG. 2A illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1, and FIG. 2B
illustrates cross-sectional views taken along lines V-V', VI-VI',
VII-VII', and VIII-VIII' of FIG. 1.
[0025] Referring to FIGS. 2A and 2B, a semiconductor device 100A in
accordance with embodiments of the inventive concept includes a
substrate 101, device isolation regions 110 defining active regions
120 and 140 on the substrate 101, gate patterns 130A, 130B, 150A,
and 150B on the active regions 120 and 140.
[0026] The substrate 101 may include a single crystalline
semiconductor substrate such as a silicon wafer or a
silicon-on-insulator (SOI) wafer. As described above, the substrate
101 may include the NMOS area NA including the first NMOS area N1
in which the NMOS transistor that has the low threshold voltage is
formed and the second NMOS area N2 in which the NMOS transistor
that has the high threshold voltage is formed, and the PMOS area PA
including the first PMOS area P1 in which the PMOS transistor that
has the low threshold voltage is formed and the second PMOS area P2
in which the PMOS transistor that has the high threshold voltage is
formed.
[0027] The active regions 120 and 140 may include first active
regions 120 in the NMOS area NA and second active regions 140 in
the PMOS area PA. The first active regions 120 may include first
channel areas 125 vertically overlapping the gate patterns 130A and
130B and first source/drain areas 127 not vertically overlapping
the gate patterns 130A and 130B. The first source/drain area 127
may include N-type impurities such as phosphorus (P) and/or arsenic
(As). The first channel areas 125 may include silicon (Si).
[0028] Further, the second active regions 140 may include second
channel areas 145 vertically overlapping the gate patterns 150A and
150B and second source/drain areas 147 not vertically overlapping
the gate patterns 150A and 150B. The second source/drain area 147
may include P-type impurities such as boron (B). The second channel
areas 145 may include silicon germanium (SiGe).
[0029] The device isolation regions 110 may be formed on the
substrate 101 to define the first active regions 120 and the second
active regions 140. The device isolation regions 110 may include
device isolation trenches 111 that are formed in the substrate 101
and a device isolation insulator 112 in the device isolation
trenches 111. The device isolation insulator 112 may include
silicon oxide (SiO.sub.2), silicon nitride (SiN), and/or silicon
oxynitride (SiON).
[0030] The gate patterns 130A, 130B, 150A and 150B may include NMOS
gate patterns 130A and 130B in the NMOS area NA, and PMOS gate
patterns 150A and 150B in the PMOS area PA. The NMOS gate patterns
130A and 130B may include a first NMOS gate pattern 130A in the
first NMOS area N1 and a second NMOS gate pattern 130B in the
second NMOS area N2. Further, the PMOS gate patterns 150A and 150B
may include a first PMOS gate pattern 150A in the first PMOS area
P1 and a second PMOS gate pattern 150B in the second PMOS area
P2.
[0031] The first NMOS gate pattern 130A includes an NMOS
interfacial insulating pattern 131, an NMOS gate insulating pattern
132, a first NMOS gate barrier pattern 133, an NMOS work function
metal pattern 135, an NMOS barrier capping pattern 136, and an NMOS
gate electrode pattern 137. The second NMOS gate pattern 130B
includes an NMOS interfacial insulating pattern 131, an NMOS gate
insulating pattern 132, a second NMOS gate barrier pattern 134, an
NMOS work function metal pattern 135, an NMOS barrier capping
pattern 136, and an NMOS gate electrode pattern 137.
[0032] The NMOS interfacial insulating pattern 131 may be formed on
surfaces of the first active regions 120. The NMOS interfacial
insulating pattern 131 may include at least one of a natural oxide
layer formed on the surfaces of the first active regions 120, a
silicon oxide layer formed using a thermal oxidation process, and a
silicon oxide layer deposited using a deposition process such as an
atomic layer deposition (ALD) process.
[0033] The NMOS gate insulating pattern 132 may be conformally
formed on a surface of the NMOS interfacial insulating pattern 131
and a surface of the device isolation region 110. The NMOS gate
insulating pattern 132 may include at least one of high-k
dielectric insulators, such as hafnium oxide (HfO), aluminum oxide
(AlO), zirconium oxide (ZrO), lanthanum oxide (LaO), or another
metal oxide.
[0034] The first NMOS gate barrier pattern 133 and the second NMOS
gate barrier pattern 134 may be conformally formed on the NMOS gate
insulating patterns 132, respectively. For example, the first NMOS
gate barrier pattern 133 may be conformally formed on the NMOS gate
insulating pattern 132 in the first NMOS area N1, and the second
NMOS gate barrier pattern may be conformally formed on the NMOS
gate insulating pattern 132 in the second NMOS area N2.
[0035] The first NMOS gate barrier pattern 133 and the second NMOS
gate barrier pattern 134 may include at least one of titanium
nitride (TiN), tantalum nitride (TaN), titanium oxynitride (TiON),
tantalum oxynitride (TaON), titanium aluminum nitride (TiAlN),
tantalum aluminum nitride (TaAlN), titanium silicon nitride
(TiSiN), titanium aluminum oxynitride (TiAlON), tantalum aluminum
oxynitride (TaAlON), and titanium silicon oxynitride (TiSiON).
[0036] The first NMOS gate barrier pattern 133 may include a metal
material different than the second NMOS gate barrier pattern 134. A
work function of the first NMOS gate barrier pattern 133 may be
different than a work function of the second NMOS gate barrier
pattern 134. For example, the work function of the first NMOS gate
barrier pattern 133 may be smaller than the work function of the
second NMOS gate barrier pattern 134. For example, in embodiments
of the inventive concept, the first NMOS gate barrier pattern 133
may include titanium nitride (TiN), and the second NMOS gate
barrier pattern 134 may include titanium silicon nitride
(TiSiN).
[0037] The NMOS work function metal pattern 135 may be conformally
formed on the first NMOS gate barrier pattern 133 and the second
NMOS gate barrier pattern 134. The NMOS work function metal pattern
135 may include at least one of titanium aluminum (TiAl), titanium
aluminum oxide (TiAlO), titanium aluminum carbide (TiAlC), titanium
aluminum nitride (TiAlN), titanium aluminum oxynitride (TiAlON),
titanium aluminum carbonitride (TiAlCN), titanium aluminum
oxycarbonitride (TiAlOCN), and a combination thereof.
[0038] The NMOS barrier capping pattern 136 may be conformally
formed on the NMOS work function metal pattern 135. The NMOS
barrier capping pattern 136 may include at least one of titanium
nitride (TiN), tantalum nitride (TaN), titanium oxynitride (TiON),
tantalum oxynitride (TaON), titanium aluminum nitride (TiAlN),
tantalum aluminum nitride (TaAlN), titanium silicon nitride
(TiSiN), titanium aluminum oxynitride (TiAlON), tantalum aluminum
oxynitride (TaAlON), and titanium silicon oxynitride (TiSiON).
[0039] The NMOS gate electrode pattern 137 may be formed on the
NMOS barrier capping pattern 136. The NMOS gate electrode pattern
137 may include at least one of titanium nitride (TiN), tantalum
nitride (TaN), tungsten (W), aluminum (Al), copper (Cu), nickel
(Ni), platinum (Pt), and nickel-platinum alloy (Ni--Pt).
[0040] The first PMOS gate pattern 150A includes a PMOS interfacial
insulating pattern 151, a PMOS gate insulating pattern 152, a first
PMOS gate barrier pattern 153, a PMOS work function metal pattern
155, a PMOS barrier capping pattern 156, and a PMOS gate electrode
pattern 157. The second PMOS gate pattern 150B includes a PMOS
interfacial insulating pattern 151, a PMOS gate insulating pattern
152, a second PMOS gate barrier pattern 154, a PMOS work function
metal pattern 155, a PMOS barrier capping pattern 156, and a PMOS
gate electrode pattern 157.
[0041] The PMOS interfacial insulating pattern 151 may be formed on
surfaces of the second active regions 140. The PMOS interfacial
insulating pattern 151 may include at least one of a natural oxide
layer formed on the surfaces of the second active regions 140, a
silicon oxide layer formed using a thermal oxidation process, and
silicon oxide layer deposited using a deposition process such as an
ALD process.
[0042] The PMOS gate insulating pattern 152 may be conformally
formed on a surface of the PMOS interfacial insulating pattern 151
and a surface of the device isolation region 110. The PMOS gate
insulating pattern 152 may include at least one of high-k
dielectric insulators, such as hafnium oxide (HfO), aluminum oxide
(AlO), zirconium oxide (ZrO), lanthanum oxide (LaO), or another
metal oxide.
[0043] The first PMOS gate barrier pattern 153 and the second PMOS
gate barrier pattern 154 may be conformally formed on the PMOS gate
insulating patterns 152, respectively. For example, the first PMOS
gate barrier pattern 153 may be conformally formed on the PMOS gate
insulating pattern 152 in the first PMOS area P1, and the second
PMOS gate barrier pattern 154 may be conformally formed on the PMOS
gate insulating pattern 152 in the second PMOS area P2.
[0044] The first PMOS gate barrier pattern 153 and the second PMOS
gate barrier pattern 154 may include at least one of titanium
nitride (TiN), tantalum nitride (TaN), titanium oxynitride (TiON),
tantalum oxynitride (TaON), titanium aluminum nitride (TiAlN),
tantalum aluminum nitride (TaAlN), titanium silicon nitride
(TiSiN), titanium aluminum oxynitride (TiAlON), tantalum aluminum
oxynitride (TaAlON), and titanium silicon oxynitride (TiSiON).
[0045] In embodiments of the inventive concept, the first PMOS gate
barrier pattern 153 may include a metal material different than the
second PMOS gate barrier pattern 154. For example, the first PMOS
gate barrier pattern 153 may include titanium silicon nitride
(TiSiN), and the second PMOS gate barrier pattern 154 may include
titanium nitride (TiN). A work function of the first PMOS gate
barrier pattern 153 may be different than a work function of the
second PMOS gate barrier pattern 154. For example, the work
function of the first PMOS gate barrier pattern 153 may be greater
than the work function of the second PMOS gate barrier pattern
154.
[0046] Further, in embodiments of the inventive concept, the first
PMOS gate barrier pattern 153 may include the same metal material
as the second NMOS gate barrier pattern 134, and the second PMOS
gate barrier pattern 154 may include the same metal material as the
first NMOS gate barrier pattern 133. That is, the work function of
the first PMOS gate barrier pattern 153 may be the same as the work
function of the second NMOS gate barrier pattern 134, and the work
function of the second PMOS gate barrier pattern 154 may be the
same as the work function of the first NMOS gate barrier pattern
133, but the present inventive concept is not limited thereto.
[0047] The PMOS work function metal pattern 155 may be conformally
formed on the first PMOS gate barrier pattern 153 and the second
PMOS gate barrier pattern 154. The PMOS work function metal pattern
155 may include at least one of titanium aluminum (TiAl), titanium
aluminum oxide (TiAlO), titanium aluminum carbide (TiAlC), titanium
aluminum nitride (TiAlN), titanium aluminum oxynitride (TiAlON),
titanium aluminum carbonitride (TiAlCN), titanium aluminum
oxycarbonitride (TiAlOCN), and a combination thereof.
[0048] The PMOS barrier capping pattern 156 may be conformally
formed on the PMOS work function metal pattern 155. The PMOS
barrier capping pattern 156 may include at least one of titanium
nitride (TiN), tantalum nitride (TaN), titanium oxynitride (TiON),
tantalum oxynitride (TaON), titanium aluminum nitride (TiAlN),
tantalum aluminum nitride (TaAlN), titanium silicon nitride
(TiSiN), titanium aluminum oxynitride (TiAlON), tantalum aluminum
oxynitride (TaAlON), and titanium silicon oxynitride (TiSiON).
[0049] The PMOS gate electrode pattern 157 may be formed on the
PMOS barrier capping pattern 156. The PMOS gate electrode pattern
157 may include at least one of titanium nitride (TiN), tantalum
nitride (TaN), tungsten (W), aluminum (Al), copper (Cu), nickel
(Ni), platinum (Pt), and nickel-platinum alloy (Ni--Pt).
[0050] As described above, the semiconductor device 100A according
to embodiments of the inventive concept may include gate barrier
patterns including metal materials that have the different work
functions from each other. As a result, gate patterns having
different effective work functions can be formed in one area.
[0051] FIG. 2C illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1. In this embodiment of
the inventive concept, detailed descriptions of the same contents
as those of the above-described embodiments will be omitted.
[0052] Referring to FIG. 2C, the semiconductor device 100B in
accordance with embodiments of the inventive concept may include a
first NMOS gate pattern 130A having a multi-layer first NMOS gate
barrier pattern 133, a second NMOS gate pattern 130B having a
multi-layer second NMOS gate barrier pattern 134, a first PMOS gate
pattern 150A having a multi-layer first PMOS gate barrier pattern
153, and a second PMOS gate pattern 150B having a multi-layer
second PMOS gate barrier pattern 154, compared to the semiconductor
device 100A in FIGS. 2A and 2B.
[0053] The first NMOS gate barrier pattern 133 may include a first
lower NMOS gate barrier pattern 133a on an NMOS gate insulating
pattern 132 in a first NMOS area N1, a first intermediate NMOS gate
barrier pattern 133b on the first lower NMOS gate barrier pattern
133a, and a first upper NMOS gate barrier pattern 133c on the first
intermediate NMOS gate barrier pattern 133b. Further, the second
NMOS gate barrier pattern 134 may include a second lower NMOS gate
barrier pattern 134a on an NMOS gate insulating pattern 132 in a
second NMOS area N2, a second intermediate NMOS gate barrier
pattern 134b on the second lower NMOS gate barrier pattern 134a,
and a second upper NMOS gate barrier pattern 134c on the second
intermediate NMOS gate barrier pattern 134b.
[0054] The first lower NMOS gate barrier pattern 133a may include a
metal material different than the second lower NMOS gate barrier
pattern 134a. For example, the first lower NMOS gate barrier
pattern 133a may include titanium nitride (TiN), and the second
lower NMOS gate barrier pattern 134a may include titanium silicon
nitride (TiSiN).
[0055] The first intermediate NMOS gate barrier pattern 133b and
the second intermediate NMOS gate barrier pattern 134b may include
the same metal material. Also, the first upper NMOS gate barrier
pattern 133c and the second upper NMOS gate barrier pattern 134c
may include the same metal material. For example, the first
intermediate NMOS gate barrier pattern 133b, the second
intermediate NMOS gate barrier pattern 134b, the first upper NMOS
gate barrier pattern 133c and the second upper NMOS gate barrier
pattern 134c may include titanium nitride (TiN) or tantalum nitride
(TaN). The first intermediate NMOS gate barrier pattern 133b may
include a metal material different than the first upper NMOS gate
barrier pattern 133c. Further, the second intermediate NMOS gate
barrier pattern 134b may include a metal material different than
the second upper NMOS gate barrier pattern 134c.
[0056] The first PMOS gate barrier pattern 153 may include a first
lower PMOS gate barrier pattern 153a on a PMOS gate insulating
pattern 152 in a first PMOS area P1, a first intermediate PMOS gate
barrier pattern 153b on the first lower PMOS gate barrier pattern
153a, and a first upper PMOS gate barrier pattern 153c on the first
intermediate PMOS gate barrier pattern 153b. Further, the second
PMOS gate barrier pattern 154 may include a second lower PMOS gate
barrier pattern 154a on a PMOS gate insulating pattern 152 in a
second PMOS area P2, a second intermediate PMOS gate barrier
pattern 154b on the second lower PMOS gate barrier pattern 154a,
and a second upper PMOS gate barrier pattern 154c on the second
intermediate PMOS gate barrier pattern 154b.
[0057] The first lower PMOS gate barrier pattern 153a may include a
metal material different than the second lower PMOS gate barrier
pattern 154a. For example, the first lower PMOS gate barrier
pattern 153a may include titanium silicon nitride (TiSiN), and the
second lower PMOS gate barrier pattern 154a may include titanium
nitride (TiN).
[0058] The first intermediate PMOS gate barrier pattern 153b and
the second intermediate PMOS gate barrier pattern 154b may include
the same metal material. Also, the first upper PMOS gate barrier
pattern 153c and the second upper PMOS gate barrier pattern 154c
may include the same metal material. For example, the first
intermediate PMOS gate barrier pattern 153b, the second
intermediate PMOS gate barrier pattern 154b, the first upper PMOS
gate barrier pattern 153c and the second upper PMOS gate barrier
pattern 154c may include titanium nitride (TiN) or tantalum nitride
(TaN). The first intermediate PMOS gate barrier pattern 153b may
include a metal material different than the first upper PMOS gate
barrier pattern 153c. Further, the second intermediate PMOS gate
barrier pattern 154b may include a metal material different than
the second upper PMOS gate barrier pattern 154c.
[0059] FIG. 2D illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1. In this embodiment of
the inventive concept, detailed descriptions of the same contents
as those of the above-described embodiments will be omitted.
[0060] Referring to FIG. 2D, in the semiconductor device 100C in
accordance with embodiments of the inventive concept, a first upper
NMOS gate barrier pattern 133c and a second upper NMOS gate barrier
pattern 134c have different metal materials, and a first upper PMOS
gate barrier pattern 153c and a second upper PMOS gate barrier
pattern 154c have different metal materials, compared to the
semiconductor device 100B in FIG. 2C.
[0061] Further, the first lower NMOS gate barrier pattern 133a and
the second lower NMOS gate barrier pattern 134a may include the
same metal material, and the first intermediate NMOS gate barrier
pattern 133b and the second intermediate NMOS gate barrier pattern
134b may include the same metal material.
[0062] Also, the first lower PMOS gate barrier pattern 153a and the
second lower PMOS gate barrier pattern 154a may include the same
metal material, and the first intermediate PMOS gate barrier
pattern 153b and the second intermediate PMOS gate barrier pattern
154b may include the same metal material.
[0063] FIG. 2E illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1. In this embodiment of
the inventive concept, detailed descriptions of the same contents
as those of the above-described embodiments will be omitted.
[0064] Referring to FIG. 2E, in the semiconductor device 100D in
accordance with embodiments of the inventive concept, a first
intermediate NMOS gate barrier pattern 133b and a second
intermediate NMOS gate barrier pattern 134b have different metal
materials, and a first intermediate PMOS gate barrier pattern 153b
and a second intermediate PMOS gate barrier pattern 154b have
different metal materials, compared to the semiconductor device
100B in FIG. 2C.
[0065] Further, the first lower NMOS gate barrier pattern 133a and
the second lower NMOS gate barrier pattern 134a may include the
same metal material, and the first upper NMOS gate barrier pattern
133c and the second upper NMOS gate barrier pattern 134c may
include the same metal material.
[0066] Also, the first lower PMOS gate barrier pattern 153a and the
second lower PMOS gate barrier pattern 154a may include the same
metal material, and the first upper PMOS gate barrier pattern 153c
and the second upper PMOS gate barrier pattern 154c may include the
same metal material.
[0067] FIG. 3A illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1, and FIG. 3B
illustrates cross-sectional views taken along lines V-V', VI-VI',
VII-VII', and VIII-VII' of FIG. 1. In this embodiment of the
inventive concept, detailed descriptions of the same contents as
those of the above-described embodiments will be omitted.
[0068] Referring to FIGS. 3A and 3B, the semiconductor device 200A
in accordance with embodiments of the inventive concept may include
gate patterns 230A, 230B, 250A and 250B including a first NMOS gate
pattern 230A in a first NMOS area N1, a second NMOS gate pattern
230B in a second NMOS area N2, a first PMOS gate pattern 250A in a
first PMOS area P1, and a second PMOS gate pattern 250B in a second
PMOS area P2.
[0069] A substrate 201 may include a NMOS area NA including the
first NMOS area N1 in which the NMOS transistor that has the low
threshold voltage is formed and the second NMOS area N2 in which
the NMOS transistor that has the high threshold voltage is formed,
and a PMOS area PA including the first PMOS area P1 in which the
PMOS transistor that has the low threshold voltage is formed and
the second PMOS area P2 in which the PMOS transistor that has the
high threshold voltage is formed.
[0070] The first NMOS gate pattern 230A includes an NMOS
interfacial insulating pattern 231 on the substrate 201, an NMOS
gate insulating pattern 232 formed on the NMOS interfacial
insulating pattern 231 in a U-shape, a first NMOS gate barrier
pattern 233 formed on the NMOS gate insulating pattern 232 in a
U-shape, an NMOS work function metal pattern 235 formed on the
first NMOS gate barrier pattern 233 in a U-shape, an NMOS barrier
capping pattern 236 on the NMOS work function metal pattern 235 in
a U-shape, and an NMOS gate electrode pattern 237 formed on the
NMOS barrier capping pattern 236. Upper surfaces of the NMOS gate
insulating pattern 232, the first NMOS gate barrier pattern 233,
the NMOS work function metal pattern 235, the NMOS barrier capping
pattern 236, and the NMOS gate electrode pattern 237 may be
substantially coplanar.
[0071] The second NMOS gate pattern 230B includes an NMOS
interfacial insulating pattern 231 on the substrate 201, an NMOS
gate insulating pattern 232 formed on the NMOS interfacial
insulating pattern 231 in a U-shape, a second NMOS gate barrier
pattern 234 formed on the NMOS gate insulating pattern 232 in a
U-shape, an NMOS work function metal pattern 235 formed on the
second NMOS gate barrier pattern 234 in a U-shape, an NMOS barrier
capping pattern 236 on the NMOS work function metal pattern 235 in
a U-shape, and an NMOS gate electrode pattern 237 formed on the
NMOS barrier capping pattern 236. Upper surfaces of the NMOS gate
insulating pattern 232, the second NMOS gate barrier pattern 234,
the NMOS work function metal pattern 235, the NMOS barrier capping
pattern 236, and the NMOS gate electrode pattern 237 may be
substantially coplanar.
[0072] The first PMOS gate pattern 250A includes a PMOS interfacial
insulating pattern 251 on the substrate 201, a PMOS gate insulating
pattern 252 formed on the PMOS interfacial insulating pattern 251
in a U-shape, a first PMOS gate barrier pattern 253 formed on the
PMOS gate insulating pattern 252 in a U-shape, a PMOS work function
metal pattern 255 formed on the first PMOS gate barrier pattern 253
in a U-shape, a PMOS barrier capping pattern 256 on the PMOS work
function metal pattern 255 in a U-shape, and a PMOS gate electrode
pattern 257 formed on the PMOS barrier capping pattern 256. Upper
surfaces of the PMOS gate insulating pattern 252, the first PMOS
gate barrier pattern 253, the PMOS work function metal pattern 255,
the PMOS barrier capping pattern 256, and the PMOS gate electrode
pattern 257 may be substantially coplanar.
[0073] The second PMOS gate pattern 250B includes a PMOS
interfacial insulating pattern 251 on a substrate 201, a PMOS gate
insulating pattern 252 formed on the PMOS interfacial insulating
pattern 251 in a U-shape, a second PMOS gate barrier pattern 254
formed on the PMOS gate insulating pattern 252 in a U-shape, a PMOS
work function metal pattern 255 formed on the second PMOS gate
barrier pattern 254 in a U-shape, a PMOS barrier capping pattern
256 on the PMOS work function metal pattern 255 in a U-shape, and a
PMOS gate electrode pattern 257 formed on the PMOS barrier capping
pattern 256. Upper surfaces of the PMOS gate insulating pattern
252, the second PMOS gate barrier pattern 254, the PMOS work
function metal pattern 255, the PMOS barrier capping pattern 256,
and the PMOS gate electrode pattern 257 may be substantially
coplanar.
[0074] The semiconductor device 200A may further include a gate
spacer 260 on sidewalls of the gate patterns 230A, 230B, 250A and
250B and an interlayer insulating layer 270 covering an outer
sidewall of gate spacer 260 and source/drain areas 227 and 247. The
gate spacer 260 may include at least one of silicon nitride (SiN),
silicon oxynitride (SiON), silicon oxycarbide (SiOC), silicon
oxycarbonitride (SiOCN), and silicon boron carbonitride (SiBCN).
The interlayer insulating layer 270 may include silicon oxide
(SiO.sub.2).
[0075] FIG. 3C illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1. In this embodiment of
the inventive concept, detailed descriptions of the same contents
as those of the above-described embodiments will be omitted.
[0076] Referring to FIG. 3C, the semiconductor device 200B in
accordance with embodiments of the inventive concept may include a
first NMOS gate pattern 230A having a multi-layer first NMOS gate
barrier pattern 233, a second NMOS gate pattern 230B having a
multi-layer second NMOS gate barrier pattern 234, a first PMOS gate
pattern 250A having a multi-layer first PMOS gate barrier pattern
253, and a second PMOS gate pattern 250B having a multi-layer
second PMOS gate barrier pattern 254, compared to the semiconductor
device 200A in FIG. 3A.
[0077] The first NMOS gate barrier pattern 233 may include a first
lower NMOS gate barrier pattern 233a on an NMOS gate insulating
pattern 232 in a first NMOS area N1, a first intermediate NMOS gate
barrier pattern 233b on the first lower NMOS gate barrier pattern
233a, and a first upper NMOS gate barrier pattern 233c on the first
intermediate NMOS gate barrier pattern 233b. Further, the second
NMOS gate barrier pattern 234 may include a second lower NMOS gate
barrier pattern 234a on an NMOS gate insulating pattern 232 in a
second NMOS area N2, a second intermediate NMOS gate barrier
pattern 234b on the second lower NMOS gate barrier pattern 234a,
and a second upper NMOS gate barrier pattern 234c on the second
intermediate NMOS gate barrier pattern 234b.
[0078] The first lower NMOS gate barrier pattern 233a may include a
metal material different than the second lower NMOS gate barrier
pattern 234a. The first intermediate NMOS gate barrier pattern 233b
and the second intermediate NMOS gate barrier pattern 234b may
include the same metal material. Also, the first upper NMOS gate
barrier pattern 233c and the second upper NMOS gate barrier pattern
234c may include the same metal material.
[0079] The first PMOS gate barrier pattern 253 may include a first
lower PMOS gate barrier pattern 253a on a PMOS gate insulating
pattern 252 in a first PMOS area P1, a first intermediate PMOS gate
barrier pattern 253b on the first lower PMOS gate barrier pattern
253a, and a first upper PMOS gate barrier pattern 253c on the first
intermediate PMOS gate barrier pattern 253b. Further, the second
PMOS gate barrier pattern 254 may include a second lower PMOS gate
barrier pattern 254a on a PMOS gate insulating pattern 252 in a
second PMOS area P2, a second intermediate PMOS gate barrier
pattern 254b on the second lower PMOS gate barrier pattern 254a,
and a second upper PMOS gate barrier pattern 254c on the second
intermediate PMOS gate barrier pattern 254b.
[0080] The first lower PMOS gate barrier pattern 253a may include a
metal material different than the second lower PMOS gate barrier
pattern 254a. The first intermediate PMOS gate barrier pattern 253b
and the second intermediate PMOS gate barrier pattern 254b may
include the same metal material. Also, the first upper PMOS gate
barrier pattern 253c and the second upper PMOS gate barrier pattern
254c may include the same metal material.
[0081] FIG. 3D illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1. In this embodiment of
the inventive concept, detailed descriptions of the same content as
those of the above-described embodiments will be omitted.
[0082] Referring to FIG. 3D, in the semiconductor device 200C in
accordance with embodiments of the inventive concept, a first upper
NMOS gate barrier pattern 233c and a second upper NMOS gate barrier
pattern 234c have different metal materials, and a first upper PMOS
gate barrier pattern 253c and a second upper PMOS gate barrier
pattern 254c have different metal materials, compared to the
semiconductor device 200B in FIG. 3C.
[0083] Further, the first lower NMOS gate barrier pattern 233a and
the second lower NMOS gate barrier pattern 234a may include the
same metal material, and the first intermediate NMOS gate barrier
pattern 233b and the second intermediate NMOS gate barrier pattern
234b may include the same metal material.
[0084] Also, the first lower PMOS gate barrier pattern 253a and the
second lower PMOS gate barrier pattern 254a may include the same
metal material, and the first intermediate PMOS gate barrier
pattern 253b and the second intermediate PMOS gate barrier pattern
254b may include the same metal material.
[0085] FIG. 3E illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1. In this embodiment of
the inventive concept, detailed descriptions of the same content as
those of the above-described embodiments will be omitted.
[0086] Referring to FIG. 3E, in the semiconductor device 200D in
accordance with embodiments of the inventive concept, a first
intermediate NMOS gate barrier pattern 233b and a second
intermediate NMOS gate barrier pattern 234b have different metal
materials, and a first intermediate PMOS gate barrier pattern 253b
and a second intermediate PMOS gate barrier pattern 254b have
different metal materials, compared to the semiconductor device
200B in FIG. 3C.
[0087] Further, the first lower NMOS gate barrier pattern 233a and
the second lower NMOS gate barrier pattern 234a may include the
same metal material, and the first upper NMOS gate barrier pattern
233c and the second upper NMOS gate barrier pattern 234c may
include the same metal material.
[0088] Also, the first lower PMOS gate barrier pattern 253a and the
second lower PMOS gate barrier pattern 254a may include the same
metal material, and the first upper PMOS gate barrier pattern 253c
and the second upper PMOS gate barrier pattern 254c may include the
same metal material.
[0089] FIG. 4A illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1, and FIG. 4B
illustrates cross-sectional views taken along lines V-V', VI-VI',
VII-VII', and VIII-VII' of FIG. 1. In this embodiment of the
inventive concept, detailed descriptions of the same contents as
those of the above-described embodiments will be omitted.
[0090] Referring to FIGS. 4A and 4B, the semiconductor device 300A
in accordance with embodiments of the inventive concept may include
active regions 320 and 340 having a fin shape protruding from a
substrate 301, compared to the semiconductor device 200A in FIGS.
3A and 3B. Upper surface of a device isolation region 310 formed on
the substrate 301 may be located at a lower level than upper
surfaces of the active regions 320 and 340. Accordingly, portions
of the active regions 320 and 340 may protrude from the upper
surface of the device isolation region 310. Upper and side surfaces
of the active regions 320 and 340 protruding from the upper surface
of the device isolation region 310 may be covered by gate patterns
330A, 330B, 350A, and 350B.
[0091] FIG. 4C illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1. In this embodiment of
the inventive concept, detailed descriptions of the same contents
as those of the above-described embodiments will be omitted.
[0092] Referring to FIG. 4C, the semiconductor device 300B in
accordance with embodiments of the inventive concept may include a
first NMOS gate pattern 330A having a multi-layer first NMOS gate
barrier pattern 333, a second NMOS gate pattern 330B having a
multi-layer second NMOS gate barrier pattern 334, a first PMOS gate
pattern 350A having a multi-layer first PMOS gate barrier pattern
353, and a second PMOS gate pattern 350B having a multi-layer
second PMOS gate barrier pattern 354, compared to the semiconductor
device 300A in FIG. 4A.
[0093] The first NMOS gate barrier pattern 333 may include a first
lower NMOS gate barrier pattern 333a on an NMOS gate insulating
pattern 332 in a first NMOS area N1, a first intermediate NMOS gate
barrier pattern 333b on the first lower NMOS gate barrier pattern
333a, and a first upper NMOS gate barrier pattern 333c on the first
intermediate NMOS gate barrier pattern 333b. Further, the second
NMOS gate barrier pattern 334 may include a second lower NMOS gate
barrier pattern 334a on an NMOS gate insulating pattern 332 in a
second NMOS area N2, a second intermediate NMOS gate barrier
pattern 334b on the second lower NMOS gate barrier pattern 334a,
and a second upper NMOS gate barrier pattern 334c on the second
intermediate NMOS gate barrier pattern 334b.
[0094] The first lower NMOS gate barrier pattern 333a may include a
metal material different than the second lower NMOS gate barrier
pattern 334a. The first intermediate NMOS gate barrier pattern 333b
and the second intermediate NMOS gate barrier pattern 334b may
include the same metal material. Also, the first upper NMOS gate
barrier pattern 333c and the second upper NMOS gate barrier pattern
334c may include the same metal material.
[0095] The first PMOS gate barrier pattern 353 may include a first
lower PMOS gate barrier pattern 353a on a PMOS gate insulating
pattern 352 in a first PMOS area P1, a first intermediate PMOS gate
barrier pattern 353b on the first lower PMOS gate barrier pattern
353a, and a first upper PMOS gate barrier pattern 353c on the first
intermediate PMOS gate barrier pattern 353b. Further, the second
PMOS gate barrier pattern 354 may include a second lower PMOS gate
barrier pattern 354a on a PMOS gate insulating pattern 352 in a
second PMOS area P2, a second intermediate PMOS gate barrier
pattern 354b on the second lower PMOS gate barrier pattern 354a,
and a second upper PMOS gate barrier pattern 354c on the second
intermediate PMOS gate barrier pattern 354b.
[0096] The first lower PMOS gate barrier pattern 353a may include a
metal material different than the second lower PMOS gate barrier
pattern 354a. The first intermediate PMOS gate barrier pattern 353b
and the second intermediate PMOS gate barrier pattern 354b may
include the same metal material. Also, the first upper PMOS gate
barrier pattern 353c and the second upper PMOS gate barrier pattern
354c may include the same metal material.
[0097] FIG. 4D illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1. In this embodiment of
the inventive concept, detailed descriptions of the same contents
as those of the above-described embodiments will be omitted.
[0098] Referring to FIG. 4D, in the semiconductor device 300C in
accordance with embodiments of the inventive concept, a first upper
NMOS gate barrier pattern 333c and a second upper NMOS gate barrier
pattern 334c have different metal materials, and a first upper PMOS
gate barrier pattern 353c and a second upper PMOS gate barrier
pattern 354c have different metal materials, compared to the
semiconductor device 300B in FIG. 4C.
[0099] Further, the first lower NMOS gate barrier pattern 333a and
the second lower NMOS gate barrier pattern 334a may include the
same metal material, and the first intermediate NMOS gate barrier
pattern 333b and the second intermediate NMOS gate barrier pattern
334b may include the same metal material.
[0100] Also, the first lower PMOS gate barrier pattern 353a and the
second lower PMOS gate barrier pattern 354a may include the same
metal material, and the first intermediate PMOS gate barrier
pattern 353b and the second intermediate PMOS gate barrier pattern
354b may include the same metal material.
[0101] FIG. 4E illustrates cross-sectional views taken along lines
I-I', II-II', III-III', and IV-IV' of FIG. 1. In this embodiment of
the inventive concept, detailed descriptions of the same content as
those of the above-described embodiments will be omitted.
[0102] Referring to FIG. 4E, in the semiconductor device 300D in
accordance with embodiments of the inventive concept, a first
intermediate NMOS gate barrier pattern 333b and a second
intermediate NMOS gate barrier pattern 334b have different metal
materials, and a first intermediate PMOS gate barrier pattern 353b
and a second intermediate PMOS gate barrier pattern 354b have
different metal materials, compared to the semiconductor device
300B in FIG. 4C.
[0103] Further, the first lower NMOS gate barrier pattern 333a and
the second lower NMOS gate barrier pattern 334a may include the
same metal material, and the first upper NMOS gate barrier pattern
333c and the second upper NMOS gate barrier pattern 334c may
include the same metal material.
[0104] Also, the first lower PMOS gate barrier pattern 353a and the
second lower PMOS gate barrier pattern 354a may include the same
metal material, and the first upper PMOS gate barrier pattern 353c
and the second upper PMOS gate barrier pattern 354c may include the
same metal material.
[0105] FIGS. 5A to 5D illustrate cross-sectional views taken along
lines I-I', II-II', V-V', and VI-VI' of FIG. 1. FIGS. 5A to 5D are
views regarding only an NMOS area, but it may be simultaneously or
separately performed in the same method with respect to a PMOS
area.
[0106] Referring to FIG. 5A, a method of fabricating the
semiconductor device in accordance with embodiments of the
inventive concept may include preparing a substrate 101, forming
device isolation regions 110 defining active regions 120 on the
substrate 101, sequentially forming an interfacial insulating layer
1, a gate insulating layer 2, and a first gate barrier layer 3 on
surfaces of the active regions 120 and surfaces of the device
isolation regions 110, and forming a first mask pattern M1 on the
first gate barrier layer 3.
[0107] The substrate 101 may include a single crystalline
semiconductor substrate such as a silicon wafer or SOI wafer. The
substrate 101 may include a first NMOS area N1 in which the NMOS
transistor having a low threshold voltage is disposed, and the
second NMOS area N2 in which the NMOS transistor having a high
threshold voltage is disposed.
[0108] The forming of the device isolation regions 110 defining the
active regions 120 may include performing a shallow trench
isolation (STI) process. The STI process may include forming device
isolation trenches 111 in the substrate 101, and filling the device
isolation trenches 111 with a device isolation insulator 112. The
device isolation insulator 112 may include silicon oxide
(SiO.sub.2), silicon nitride (SiN), and/or silicon oxynitride
(SiON).
[0109] The interfacial insulating layer 1 may be conformally formed
on the active regions 120. The interfacial insulating layer 1 may
include at least one of a natural oxide layer formed on the
surfaces of the first active regions 120, a silicon oxide layer
formed using a thermal oxidation process, and a silicon oxide layer
deposited using a deposition process such as an ALD process. When
the interfacial insulating layer 1 is formed by the ALD process,
the interfacial insulating layer 1 may be conformally formed on the
device isolation regions 110 in addition to the active regions 120.
In other embodiments, the interfacial insulating layer 1 may be
omitted.
[0110] The gate insulating layer 2 may be conformally formed on the
interfacial insulating layer 1 and the device isolation regions 110
by performing a deposition process. The gate insulating layer 2 may
include at least one of high-k dielectric insulators, such as
hafnium oxide (HfO), aluminum oxide (AlO), zirconium oxide (ZrO),
lanthanum oxide (LaO), and another metal oxide.
[0111] The first gate barrier layer 3 may be conformally formed on
the gate insulating layer 2 by performing a deposition process. The
first gate barrier layer 3 may include at least one of titanium
nitride (TiN), tantalum nitride (TaN), titanium oxynitride (TiON),
tantalum oxynitride (TaON), titanium aluminum nitride (TiAlN),
tantalum aluminum nitride (TaAlN), titanium silicon nitride
(TiSiN), titanium aluminum oxynitride (TiAlON), tantalum aluminum
oxynitride (TaAlON), and titanium silicon oxynitride (TiSiON). As
an example, the first gate barrier layer 3 may include TiN. The
deposition process may include an ALD or a chemical vapor
deposition (CVD) process.
[0112] The first mask pattern M1 may be formed to expose the first
gate barrier layer 3 of the second NMOS area N2 and cover the first
gate barrier layer 3 of the first NMOS area N1. The first mask
pattern M1 may include silicon oxide and/or silicon nitride.
[0113] Referring to FIG. 5B, the method may include removing the
exposed first gate barrier layer 3 and the first mask pattern M1 by
performing an etching process, forming a second gate barrier layer
4 on the first gate barrier layer 3 on the first NMOS area Ni and
the gate insulating layer 2 of the second NMOS area N2, and forming
a second mask pattern M2 which exposes the second gate barrier
layer 4 of the first NMOS area N1 and covers the second gate
barrier layer 4 of the second NMOS area N2.
[0114] The second gate barrier layer 4 may be conformally formed on
the first gate barrier layer 3 in the first NMOS area N1 and the
gate insulating layer 2 in the second NMOS area N2 by performing a
deposition process. The second gate barrier layer 4 may include at
least one of titanium nitride (TiN), tantalum nitride (TaN),
titanium oxynitride (TiON), tantalum oxynitride (TaON), titanium
aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN),
titanium silicon nitride (TiSiN), titanium aluminum oxynitride
(TiAlON), tantalum aluminum oxynitride (TaAlON), and titanium
silicon oxynitride (TiSiON).
[0115] In embodiments of the inventive concept, the second gate
barrier layer 4 may include a metal material different than the
first gate barrier layer 3. For example, the second gate barrier
layer may include titanium silicon nitride (TiSiN).
[0116] A vertical thickness of the first gate barrier layer 3 may
be substantially the same as a vertical thickness of the second
gate barrier layer 4.
[0117] The second mask pattern M2 may include silicon oxide and/or
silicon nitride.
[0118] Referring to FIG. 5C, the method may include removing the
exposed the second gate barrier layer 4 and the second mask pattern
M2 by performing an etching process.
[0119] Referring to FIG. 5D, the method may include sequentially
forming a work function metal layer 5, a barrier capping layer 6,
and a gate electrode layer 7 on the first gate barrier layer 3 and
the second gate barrier layer 4.
[0120] The work function metal layer 5 may be conformally formed on
the first gate barrier layer 3 and the second gate barrier layer 4
by performing a deposition process. The work function metal layer 5
may include at least one of titanium aluminum (TiAl), titanium
aluminum oxide (TiAlO), titanium aluminum carbide (TiAlC), titanium
aluminum nitride (TiAlN), titanium aluminum oxynitride (TiAlON),
titanium aluminum carbonitride (TiAlCN), titanium aluminum
oxycarbonitride (TiAlOCN), and a combination thereof.
[0121] The barrier capping layer 6 may be conformally formed on the
work function metal layer 5 by performing a deposition process. The
barrier capping layer 6 may include at least one of titanium
nitride (TiN), tantalum nitride (TaN), titanium oxynitride (TiON),
tantalum oxynitride (TaON), titanium aluminum nitride (TiAlN),
tantalum aluminum nitride (TaAlN), titanium silicon nitride
(TiSiN), titanium aluminum oxynitride (TiAlON), tantalum aluminum
oxynitride (TaAlON), and titanium silicon oxynitride (TiSiON).
[0122] The gate electrode layer 7 may be formed on the barrier
capping layer 6 by performing a deposition process. The gate
electrode layer 7 may include at least one of titanium nitride
(TiN), tantalum nitride (TaN), tungsten (W), aluminum (Al), copper
(Cu), nickel (Ni), platinum (Pt), and nickel-platinum alloy
(Ni--Pt).
[0123] Referring again to FIGS. 2A and 2B, the method may include
forming a first NMOS gate pattern 130A in the first NMOS area N1
and a second NMOS gate pattern 130B in the second NMOS area N2 by
patterning the gate electrode layer 7, the barrier capping layer 6,
the work function metal layer 5, the first gate barrier layer 3,
the second gate barrier layer 4, the gate insulating layer 2, and
the interfacial insulating layer 1.
[0124] The method may further include forming source/drain areas
127 in the active regions 120 located at both sides of the first
and second NMOS gate patterns 130A and 130B. The forming of the
source/drain areas 127 may include removing portions of the active
regions 120 at both sides of the first and second NMOS gate
patterns 130A and 130B, and forming epitaxial layer on the active
regions 120 by performing a selective epitaxial growth (SEG)
process. Accordingly, the active regions 120 between the
source/drain areas 127 may be channel areas 125. That is, the
channel areas 125 may vertically overlap the first and second NMOS
gate patterns 130A and 130B.
[0125] FIGS. 6A to 6F illustrate cross-sectional views taken along
lines I-I', II-II', V-V', and VI-VI' of FIG. 1. FIGS. 6A to 6F are
views regarding only an NMOS area, but it may be simultaneously or
separately performed in the same method with respect to a PMOS
area. In embodiments of the inventive concept, detailed
descriptions of the same contents as those of the above-described
embodiments will be omitted.
[0126] Referring to FIG. 6A, a method of fabricating the
semiconductor device in accordance with embodiments of the
inventive concept may include preparing a substrate 201, forming
device isolation regions 210 defining active regions 220 on the
substrate 201, forming a sacrificial gate pattern 230S crossing the
active regions 220 on the substrate 201, and forming gate spacers
260 on side surfaces of the sacrificial gate patterns 230S. The
substrate 201 may include a first NMOS area N1 in which the NMOS
transistor having a low threshold voltage is disposed, and the
second NMOS area N2 in which the NMOS transistor having a high
threshold voltage is disposed.
[0127] The sacrificial gate pattern 230S may include sacrificial
gate insulating patterns 231s on surfaces of the active regions
220, sacrificial gate electrode patterns 233s on the sacrificial
gate insulating patterns 231s, and sacrificial gate capping
patterns 235s on the sacrificial gate electrode patterns 233s.
[0128] The sacrificial gate insulating patterns 231s may include at
least one of a natural oxide layer formed on the surfaces of the
active regions 220, a silicon oxide layer formed using a thermal
oxidation process, and a silicon oxide layer deposited using a
deposition process such as an ALD process. The sacrificial gate
electrode patterns 233s may include polysilicon. The sacrificial
gate capping patterns 235s may include silicon nitride.
[0129] The forming of the gate spacer 260 may include conformally
forming a spacer material layer on upper and side surfaces of the
sacrificial gate patterns 230S, the exposed the active regions 220,
and the device isolation region 210 by performing a deposition
process, and removing a portion of the spacer material layer by
performing an etch-back process. The spacer material layer may
include at least one of silicon nitride (SiN), silicon oxynitride
(SiON), silicon oxycarbide (SiOC), silicon oxycarbonitride (SiOCN),
and silicon borocarbonitride (SiBCN)
[0130] The method may further include forming source/drain areas
227 in the active regions 220 at both sides of the sacrificial gate
patterns 230S. The forming of the source/drain areas 227 may
include removing portions of the active regions 220 at both sides
of the sacrificial gate patterns 230S, and forming epitaxial layer
on the active regions 220 by performing an SEG process.
Accordingly, the active regions 220 between the source/drain areas
227 may be channel areas 225.
[0131] Referring to FIG. 6B, the method may include forming an
interlayer insulating layer 270 configured to cover upper surfaces
of the source/drain areas 227, upper surfaces of the device
isolation regions 210, and an outer side surface of the gate spacer
260, and forming gate pattern spaces GS exposing an inner side
surface of the gate spacer 260 and surfaces of the active regions
220 by removing the sacrificial gate patterns 230S using an etching
process.
[0132] The forming of the interlayer insulating layer 270 may
include forming the interlayer insulating layer 270 covering the
source/drain areas 227, the device isolation regions 210, and the
sacrificial gate patterns 230S by performing a deposition process,
and removing the interlayer insulating layer 270 on the sacrificial
gate patterns 230S to expose surfaces of the sacrificial gate
capping patterns 235s of the sacrificial gate patterns 230S by
performing a planarization process such as a chemical mechanical
polishing (CMP) process. Accordingly, an upper surface of the
interlayer insulating layer 270 may be substantially coplanar with
an upper surface of the sacrificial gate pattern 230S and an upper
surface of the gate spacer 260. The interlayer insulating layer 270
may include silicon oxide.
[0133] Referring to FIG. 6C, the method may include forming a
interfacial insulating layer 1, a gate insulating layer 2, and a
first gate barrier layer 3 in the gate pattern spaces GS, and
forming a first mask pattern M1 configured to cover the first gate
barrier layer 3 of the first NMOS area Ni and expose the first gate
barrier layer 3 of the second NMOS area N2.
[0134] The interfacial insulating layer 1 may be formed on surfaces
of the active regions 220 exposed through the gate pattern spaces
GS. The interfacial insulating layer 1 may include at least one of
a natural oxide layer formed on the surfaces of the active regions
220, a silicon oxide layer formed using a thermal oxidation
process, and a silicon oxide layer deposited using a deposition
process such as an ALD process.
[0135] The gate insulating layer 2 may be conformally formed on the
exposed inner side surface of the gate spacer 260, the surface of
the interfacial insulating layer 1, the upper surface of the gate
spacer 260, and the upper surface of the interlayer insulating
layer 270. The gate insulating layer 2 may include at least one of
high-k dielectric insulators, such as hafnium oxide (HfO), aluminum
oxide (AlO), zirconium oxide (ZrO), lanthanum oxide (LaO), and
another metal oxide.
[0136] The first gate barrier layer 3 may be conformally formed on
the gate insulating layer 2 by performing a deposition process. The
first gate barrier layer 3 may include at least one of titanium
nitride (TiN), tantalum nitride (TaN), titanium oxynitride (TiON),
tantalum oxynitride (TaON), titanium aluminum nitride (TiAlN),
tantalum aluminum nitride (TaAlN), titanium silicon nitride
(TiSiN), titanium aluminum oxynitride (TiAlON), tantalum aluminum
oxynitride (TaAlON), and titanium silicon oxynitride (TiSiON). As
an example, the first gate barrier layer 3 may include titanium
nitride (TiN).
[0137] Referring to FIG. 6D, the method may include removing the
exposed first gate barrier layer 3 in the second NMOS area N2 by
performing an etching process, removing the first mask pattern M1,
conformally forming a second gate barrier layer 4 on the first gate
barrier layer 3 on the first NMOS area N1 and the gate insulating
layer 2 of the second NMOS area N2, and forming a second mask
pattern M2 configured to expose the second gate barrier layer 4 of
the first NMOS area N1 and cover the second gate barrier layer 4 of
the second NMOS area N2.
[0138] The second gate barrier layer 4 may include a metal material
different than the first gate barrier layer 3. For example, the
second gate barrier layer may include titanium silicon nitride
(TiSiN).
[0139] Referring to FIG. 6E, the method include removing the
exposed second gate barrier layer 4 in the first NMOS area N1 by
performing an etching process and removing the second mask pattern
M2.
[0140] Referring to FIG. 6F, the method include conformally forming
a work function metal layer 5, a barrier capping layer 6, and a
gate electrode layer 7 on the first gate barrier layer 3 and the
second gate barrier layer 4 by performing a deposition process.
[0141] Referring again to FIGS. 3A and 3B, the method may include
forming a first NMOS gate pattern 230A in the first NMOS area N1
and a second NMOS gate pattern 230B in the second NMOS area N2 by
removing the gate electrode layer 7, the barrier capping layer 6,
the work function metal layer 5, the first gate barrier layer 3,
the second gate barrier layer 4, the gate insulating layer 2 on the
interlayer insulating layer 270 by performing a planarization
process such as a CMP process.
[0142] FIGS. 7A to 7F illustrate cross-sectional views taken along
lines I-I', II-II', V-V', and VI-VI' of FIG. 1. FIGS. 7A to 7F are
views regarding only an NMOS area, but it may be simultaneously or
separately performed in the same method with respect to a PMOS
area. In this embodiment of the inventive concept, detailed
descriptions of the same content as those of the above-described
embodiments will be omitted.
[0143] Referring to FIG. 7A, a method of fabricating the
semiconductor device in accordance with embodiments of the
inventive concept may include preparing a substrate 301, forming
fin active regions 320, device isolation regions 310, and
sacrificial gate patterns 330S on the substrate 301, and forming
gate spacers 260. The substrate 301 may include a first NMOS area
N1 and a second NMOS area N2.
[0144] The forming of the fin active regions 320 on the substrate
301 may include forming a recess mask on the substrate 301, and
forming the fin active regions 320 and a trench 311 by selectively
etching the substrate 301 using the recess mask as an etching mask.
The fin active regions 320 may protrude from the substrate 301.
[0145] The forming of the device isolation regions 310 may include
filling the trench 311 with device isolation insulator 312,
removing a portion of the device isolation insulator 312 to expose
a surface of the recess mask by performing a planarization process
such as a CMP process, and forming device isolation regions 310
configured to have upper surfaces located at a lower level than
upper surfaces of the fin active regions 320 by performing an
etch-back process. The device isolation regions 310 may include
silicon oxide.
[0146] The device isolation regions 310 may fill a lower portion of
the trench 311. Accordingly, portions of the fin active regions 320
may protrude from surfaces of the device isolation regions 310.
Side and upper surfaces of the protruding portions of the fin
active regions 320 may be covered by the first and second NMOS gate
patterns 330A and 330B which will be described later.
[0147] The sacrificial gate patterns 330S may each include a
sacrificial gate insulating pattern 331s, a sacrificial gate
electrode pattern 333s and a sacrificial gate capping pattern 335s
which are sequentially stacked on surfaces of the fin active
regions 320.
[0148] The method may further include forming source/drain areas
327 on the fin active regions 320 at both sides of the sacrificial
gate patterns 330S. The fin active region 320 between the
source/drain areas 327 may be channel areas 325.
[0149] Referring to FIG. 7B, the method may include forming an
interlayer insulating layer 370 configured to cover upper surfaces
of the source/drain areas 327, upper surfaces of the device
isolation regions 310, and an outer side surface of the gate spacer
360, and forming gate pattern spaces GS exposing an inner side
surface of the gate spacer 360 and surfaces of the fin active
regions 320 by removing the sacrificial gate patterns 330S by
performing an etching process.
[0150] Referring to FIG. 7C, the method may include forming a
interfacial insulating layer 1, a gate insulating layer 2, and a
first gate barrier layer 3 in the gate pattern spaces GS, and
forming a first mask pattern M1 configured to cover the first gate
barrier layer 3 of the first NMOS area N1 and expose the first gate
barrier layer 3 of the second NMOS area N2.
[0151] Referring to FIG. 7D, the method may include removing the
exposed first gate barrier layer 3 in the second NMOS area N2 by
performing an etching process, removing the first mask pattern M1,
conformally forming a second gate barrier layer 4 on the first gate
barrier layer 3 on the first NMOS area N1 and the gate insulating
layer 2 of the second NMOS area N2, and forming a second mask
pattern M2 configured to expose the second gate barrier layer 4 of
the first NMOS area N1 and cover the second gate barrier layer 4 of
the second NMOS area N2.
[0152] Referring to FIG. 7E, the method may include removing the
exposed second gate barrier layer 4 in the first NMOS area N1 by
performing an etching process, and removing the second mask pattern
M2.
[0153] Referring to FIG. 7F, the method may include conformally
forming a work function metal layer 5, a barrier capping layer 6,
and a gate electrode layer 7 on the first gate barrier layer 3 and
the second gate barrier layer 4 by performing a deposition
process.
[0154] Referring again to FIGS. 4A, the method may include forming
a first NMOS gate pattern 330A in the first NMOS area N1 and a
second NMOS gate pattern 330B in the second NMOS area N2 by
removing the gate electrode layer 7, the barrier capping layer 6,
the work function metal layer 5, the first gate barrier layer 3,
the second gate barrier layer 4, and the gate insulating layer 2 on
the interlayer insulating layer 270 by performing a planarization
process such as a CMP process.
[0155] FIG. 8 is a schematic diagram illustrating a semiconductor
module 2200, in accordance with an embodiment of the inventive
concept. Referring to FIG. 8, the semiconductor module 2200 in
accordance with embodiments of the inventive concept includes a
processor 2220 and semiconductor devices 2230 mounted on a module
substrate 2210. The processor 2220 or the semiconductor devices
2230 may include at least one of the semiconductor devices 100A to
300D according to the various embodiments of the inventive concept.
Conductive input/output terminals 2240 may be disposed on at least
one side of the module substrate 2210.
[0156] FIGS. 9 and 10 are schematic block diagrams illustrating
electronic systems, in accordance with embodiments of the inventive
concept.
[0157] Referring to FIG. 9, the electronic system 2300 in
accordance with embodiments of the inventive concept includes a
body 2310, a display unit 2360, and an external apparatus 2370. The
body 2310 includes a microprocessor unit 2320, a power supply 2330,
a function unit 2340, and/or a display controller unit 2350. The
body 2310 may be a system board or motherboard including a printed
circuit board (PCB) and/or a case. The microprocessor unit 2320,
the power supply 2330, the function unit 2340, and the display
controller unit 2350 may be mounted or disposed on an upper surface
or an inside of the body 2310. The display unit 2360 may be
disposed on the upper surface of the body 2310 or an inside/outside
of the body 2310. The display unit 2360 may display an image
processed by the display controller unit 2350. For example, the
display unit 2360 may include a liquid crystal display (LCD), an
active matrix organic light emitting diode (AMOLED), or various
display panels. The display unit 2360 may include a touch screen.
Accordingly, the display unit 2360 may include an input/output
function. The power supply 2330 may supply a current or voltage to
the microprocessor unit 2320, the function unit 2340, the display
controller unit 2350, etc. The power supply 2330 may include a
rechargeable battery, a socket for a dry cell, or a voltage/current
converter. The microprocessor unit 2320 may receive a voltage from
the power supply 2330 to control the function unit 2340 and the
display unit 2360. For example, the microprocessor unit 2320 may
include a central processing unit (CPU) or an application processor
(AP). The function unit 2340 may include a touch-pad, a
touch-screen, a volatile/nonvolatile memory, a memory card
controller, a camera, a lighting, an audio and video playback
processor, a wireless transmission/reception antenna, a speaker, a
microphone, a Universal Serial Bus (USB) port, and other units
having various functions. The microprocessor unit 2320 or the
function unit 2340 may include at least one of the semiconductor
devices 100A to 300D according to the various embodiments of the
inventive concept.
[0158] Referring to FIG. 10, an electronic system 2400 in
accordance with embodiments of the inventive concept includes a
microprocessor 2414, a memory 2412, and a user interface 2418,
which perform data communication using a bus 2420. The
microprocessor 2414 may include a CPU or an AP. The electronic
system 2400 may further include a random access memory (RAM) 2416
which directly communicates with the microprocessor 2414. The
microprocessor 2414 and/or the RAM 2416 may be assembled in a
single package. The user interface 2418 may be used to input data
to or output data from the electronic system 2400. For example, the
user interface 2418 may include a touch-pad, a touch-screen, a
keyboard, a mouse, a scanner, a voice detector, a cathode ray tube
(CRT) monitor, an LCD, an AMOLED, a plasma display panel (PDP), a
printer, a lighting, or various other input/output devices. The
memory 2412 may store codes for operating the microprocessor 2414,
data processed by the microprocessor 2414, or external input data.
The memory 2412 may include a memory controller, a hard disk, or a
solid state drive (SSD). The microprocessor 2414, the RAM 2416,
and/or the memory 2412 may include at least one of the
semiconductor devices 100A to 300D according to the various
embodiments of the inventive concept.
[0159] The semiconductor device according to embodiments of the
inventive concept may include gate barrier patterns including metal
materials that have the different work functions from each other.
As a result, a gate pattern having different effective work
function in the semiconductor device can be implemented.
[0160] Other various effects have been described in the above
detailed descriptions.
[0161] As is traditional in the field of the inventive concepts,
embodiments may be described and illustrated in terms of blocks
which carry out a described function or functions. These blocks,
which may be referred to herein as units or modules or the like,
are physically implemented by analog and/or digital circuits such
as logic gates, integrated circuits, microprocessors,
microcontrollers, memory circuits, passive electronic components,
active electronic components, optical components, hardwired
circuits and the like, and may optionally be driven by firmware
and/or software. The circuits may, for example, be embodied in one
or more semiconductor chips, or on substrate supports such as
printed circuit boards and the like. The circuits constituting a
block may be implemented by dedicated hardware, or by a processor
(e.g., one or more programmed microprocessors and associated
circuitry), or by a combination of dedicated hardware to perform
some functions of the block and a processor to perform other
functions of the block. Each block of the embodiments may be
physically separated into two or more interacting and discrete
blocks without departing from the scope of the inventive concepts.
Likewise, the blocks of the embodiments may be physically combined
into more complex blocks without departing from the scope of the
inventive concepts.
[0162] Although a few example embodiments have been described,
those skilled in the art will readily appreciate that many
modifications are possible without departing from the novel
teachings and advantages. Accordingly, all such modifications are
intended to be included within the scope of this inventive concept
as defined in the claims.
* * * * *