U.S. patent application number 15/209478 was filed with the patent office on 2016-11-03 for gate electrode and gate contact plug layouts for integrated circuit field effect transistors.
The applicant listed for this patent is Samsung Electronics Co., Ltd.. Invention is credited to Kyo-Suk CHAE, Young-Jin CHOI, Sang-Yeon HAN, Wook-Je KIM, Satoru YAMADA.
Application Number | 20160322354 15/209478 |
Document ID | / |
Family ID | 45399064 |
Filed Date | 2016-11-03 |
United States Patent
Application |
20160322354 |
Kind Code |
A1 |
CHAE; Kyo-Suk ; et
al. |
November 3, 2016 |
GATE ELECTRODE AND GATE CONTACT PLUG LAYOUTS FOR INTEGRATED CIRCUIT
FIELD EFFECT TRANSISTORS
Abstract
A four transistor layout can include an isolation region that
defines an active region, the active region extending along first
and second different directions. A common source region of the four
transistors extends from a center of the active region along both
the first and second directions to define four quadrants of the
active region that are outside the common source region. Four drain
regions are provided, a respective one of which is in a respective
one of the four quadrants and spaced apart from the common source
region. Finally, four gate electrodes are provided, a respective
one of which is in a respective one of the four quadrants between
the common source region and a respective one of the four drain
regions. A respective gate electrode includes a vertex and first
and second extending portions, the first extending portions
extending from the vertex along the first direction and the second
extending portions extending from the vertex along the second
direction.
Inventors: |
CHAE; Kyo-Suk; (Suwon-si,
KR) ; YAMADA; Satoru; (Seoul, KR) ; HAN;
Sang-Yeon; (Suwon-si, KR) ; CHOI; Young-Jin;
(Hwasung-si, KR) ; KIM; Wook-Je; (Gwacheon-si,
KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Samsung Electronics Co., Ltd. |
Suwon-si |
|
KR |
|
|
Family ID: |
45399064 |
Appl. No.: |
15/209478 |
Filed: |
July 13, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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|
14461202 |
Aug 15, 2014 |
9418988 |
|
|
15209478 |
|
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|
12984762 |
Jan 5, 2011 |
8823113 |
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14461202 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/535 20130101;
H01L 29/0847 20130101; H01L 27/088 20130101; H01L 29/0649 20130101;
H01L 29/4933 20130101; H01L 27/0207 20130101; H01L 29/42376
20130101; H01L 29/4238 20130101; H01L 29/7833 20130101 |
International
Class: |
H01L 27/088 20060101
H01L027/088; H01L 23/535 20060101 H01L023/535; H01L 27/02 20060101
H01L027/02; H01L 29/423 20060101 H01L029/423; H01L 29/08 20060101
H01L029/08; H01L 29/06 20060101 H01L029/06; H01L 29/49 20060101
H01L029/49 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 30, 2010 |
KR |
10-2010-0062512 |
Claims
1.-20. (canceled)
21. A semiconductor device comprising: an isolation region in a
substrate that defines an active region, the active region
extending along first and second different directions; a common
source region of four transistors that extends from a center of the
active region along both the first and second directions to define
four quadrants of the active region that are outside the common
source region; four drain regions, a respective one of which is in
a respective one of the four quadrants and spaced apart from the
common source region; and four gate electrodes, a respective one of
which is in a respective one of the four quadrants between the
common source region and a respective one of the four drain
regions, a respective gate electrode including a first extending
portion and a second extending portion, a respective first
extending portion extending from an end of a respective second
extending portion and extending along the first direction, a
respective second extending portion extending along the second
direction, and a respective first extending portion including a
first part and a second part; and four gate contact plugs, a
respective one of which is electrically connected to a respective
one of the four gate electrodes, a first pair of which are
connected to a respective one of a first pair of the gate
electrodes on the first parts thereof, and a second pair of which
are connected to a respective one of a second pair of the gate
electrodes on the second parts thereof, wherein the first pair of
the four gate contact plugs are substantially symmetric with
respect to a first virtual straight line which passes through the
center of the active region and extends along the second direction;
and the second pair of the four gate contact plugs are
substantially symmetric with respect to the first virtual straight
line.
22. The semiconductor device according to claim 21 wherein a
respective one of the second pair of the four gate contact plugs is
offset from a second virtual straight line which passes through a
center of a respective one of the first pair of the four gate
contact plugs and extends along the second direction.
23. The semiconductor device according to claim 21 wherein the
first pair of the gate electrodes and the second pair of the gate
electrodes are substantially symmetric with respect to a second
virtual straight line which passes through the center of the active
region and extends along the first direction.
24. The semiconductor device according to claim 21 wherein a
respective gate electrode further includes a third extending
portion that extends from the other end of a respective second
extending portion and extends along the first direction, a
respective third extending portion includes a third part and a
fourth part; and the four gate contact plugs are four first gate
contact plugs, the semiconductor device further comprising four
second gate contact plugs, a respective one of which is
electrically connected to a respective one of the four gate
electrodes, a first pair of which are connected to a respective one
of the first pair of the gate electrodes on the third parts
thereof, and a second pair of which are connected to a respective
one of the second pair of the gate electrodes on the fourth parts
thereof;
25. The semiconductor device according to claim 24 wherein one of
the first gate contact plugs and one of the second gate contact
plugs, which are on one of the first pair of the gate electrodes,
are substantially aligned in the second direction
26. The semiconductor device according to claim 21 further
comprising: a source contact plug electrically connected to the
common source region; and four drain contact plugs, a respective
one of which is electrically connected to a respective one of the
four drain regions.
27. A semiconductor device comprising: an active region of a
substrate, the active region including a common source region of
four transistors, the common source region including a first
portion extending along the first direction and a second portion
extending along the second direction, the first and second portions
crossing each other at a center of the active region to define four
quadrants of the active region that are outside the common source
region; first to fourth gate electrodes in the four quadrants,
respectively, a set of the first and second gate electrodes and a
set of the third and fourth gate electrodes being substantially
symmetric with respect to the first portion of the common source
region, and a set of the first and third gate electrodes and a set
of the second and fourth gate electrodes being substantially
symmetric with respect to the second portion of the common source
region, wherein first and second gate contact plugs are
electrically connected to the first gate electrode, the first and
second gate contact plugs are substantially aligned with a first
virtual straight line which passes through centers of the first and
second gate contact plugs and extends along the second direction;
and third and fourth gate contact plugs are electronically
connected to the third gate electrode, the third and fourth gate
contact plugs are offset from the first virtual straight line.
28. The semiconductor device according to claim 27 wherein a
respective gate electrode includes first to third extending
portions; a respective first extending portion extends from an end
of a respective second extending portion and extends along the
first direction; a respective third extending portion extends from
the other end of a respective second extending portion and extends
along the first direction; a respective second extending portion
extends along the second direction; the first and third gate
contact plugs are disposed on the first extending portions of the
first and third gate electrodes, respectively; and the second and
fourth gate contact plugs are disposed on the third extending
portions of the first and third gate electrodes, respectively.
29. The semiconductor device according to claim 27 wherein a set of
the first and second gate contact plugs and a set of the third and
fourth gate contact plugs are asymmetric with respect to the first
portion of the common source region.
30. The semiconductor device according to claim 27 further
comprising: fifth and sixth gate contact plugs electrically
connected to the second gate electrode, the fifth and sixth gate
contact plugs being substantially aligned with a second virtual
straight line which passes through centers of the fifth and sixth
gate contact plugs and extends along the second direction; and
seventh and eighth gate contact plugs electronically connected to
the fourth gate electrode, the seventh and eighth gate contact
plugs being offset from the second virtual straight line.
31. The semiconductor device according to claim 30 wherein a set of
the first to fourth gate contact plugs and a set of the fifth to
eighth gate contact plugs are substantially symmetric with respect
to the second portion of the common source region.
32. The semiconductor device according to claim 27 further
comprising first to fourth drain regions in the four quadrants,
respectively, wherein a respective drain region is spaced apart
from the common source region with a respective gate electrode
interposed therebetween.
33. A semiconductor device comprising: an active region of a
substrate, the active region including a common source region of
four transistors, the common source region including a first
portion extending along the first direction and a second portion
extending along the second direction, the first and second portions
crossing each other at a center of the active region to define four
quadrants of the active region that are outside the common source
region; first to fourth gate electrodes in the four quadrants,
respectively; and a first pair of gate contact plugs, a second pair
of gate contact plugs, a third of gate contact plugs and a fourth
of gate contact plugs that are electrically connected to the first
to fourth gate electrodes, respectively, wherein a first structure
including the first gate electrode and the first pair of gate
contact plugs and a second structure including the second gate
electrode and the second pair of gate contact plugs are
substantially symmetric with respect to the second portion of the
common source region; a third structure including the third gate
electrode and the third pair of gate contact plugs and a fourth
structure including the fourth gate electrode and the fourth pair
of gate contact plugs are substantially symmetric with respect to
the second portion of the common source region; and the first pair
of gate contact plugs and the third pair of gate contact plugs are
asymmetric with respect to the first portion of the common source
region.
34. The semiconductor device according to claim 33 wherein the
first pair of gate contact plugs are substantially aligned in the
second direction; and the second pair of gate contact plugs are
substantially aligned in the second direction.
35. The semiconductor device according to claim 33 wherein one of
the third pair of gate contact plugs is offset from a virtual
straight line which passes through a center of the other of the
third pair of gate contact plugs and extends along the first
direction
36. The semiconductor device according to claim 33 wherein a
respective gate electrode includes a pair of extending portions
that extend along the first direction; and the pair of gate contact
plugs are respectively on the pair of extending portions of a
respective gate electrode.
37. The semiconductor device according to claim 33 wherein the
second pair of gate contact plugs and the fourth pair of gate
contact plugs are asymmetric with respect to the first portion of
the common source region.
38. The semiconductor device according to claim 33 further
comprising first to fourth drain regions in the four quadrants,
respectively, wherein a respective drain region is spaced apart
from the common source region with a respective gate electrode
interposed therebetween.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This U.S. non-provisional patent application is a
continuation of U.S. patent application Ser. No. 14/461,202, filed
Aug. 15, 2014, which itself is a divisional of application Ser. No.
12/984,762, filed Jan. 5, 2011, now U.S. Pat. No. 8,823,113, which
itself claims priority under 35 U.S.C. .sctn.119 of Korean Patent
Application No. 10-2010-0062512, filed on Jun. 30, 2010, the entire
contents of all of which are hereby incorporated by reference.
BACKGROUND
[0002] Various embodiments described herein relate to integrated
circuits, and more particularly, to field effect transistors and
field effect transistor circuits for integrated circuits.
[0003] Integrated circuits may include memory devices storing data,
logic devices performing a logic operation on data, and the like. A
hybrid integrated circuit can include a memory device and a logic
device together. Integrated circuits may use field effect
transistors as the active devices thereof. Due to characteristics
such as miniaturization, multifunction and/or low manufacturing
cost, integrated circuits have been receiving attention as an
important element in the electronics industry. As the electronics
industry has been making rapid advancements, demand for highly
integrated devices are increasing.
SUMMARY
[0004] Various embodiments described herein can provide a four
transistor layout for an integrated circuit substrate. The four
transistor layout can include an isolation region in the integrated
circuit substrate that defines an active region, the active region
extending along first and second different directions. A common
source region of the four transistors extends from a center of the
active region along both the first and second directions to define
four quadrants of the active region that are outside the common
source region. Four drain regions are provided, a respective one of
which is in a respective one of the four quadrants and spaced apart
from the common source region. Finally, four gate electrodes are
provided, a respective one of which is in a respective one of the
four quadrants between the common source region and a respective
one of the four drain regions, a respective gate electrode
including a vertex and first and second extending portions, the
first extending portions extending from the vertex along the first
direction and the second extending portions extending from the
vertex along the second direction.
[0005] In some embodiments, the drain regions and the gate
electrodes of a first pair of the four transistors are symmetric
with respect to the drain regions and the gate electrodes of a
second pair of the four transistors about a portion of the common
source region that extends from the center of the active region
along the first direction. In other embodiments, the drain regions
and the gate electrodes of a first pair of the four transistors are
symmetric with respect to the drain regions and the gate electrodes
of a second pair of the four transistors about a portion of the
common source region that extends from the center of the active
region along the second direction.
[0006] Four drain contact plugs also may be provided, a respective
one of which electrically contacts a respective one of the drain
regions in a respective one of the four quadrants. Moreover, a pair
of source contact plugs may be provided, a first one of which is
between the second extending portions of the gate electrodes of a
first pair of the four transistors, a second one of which is
between the second extending portions of the gate electrodes of a
second pair of the four transistors.
[0007] In other embodiments, the ends of the first and second
extending portions of the four gate electrodes extend beyond the
active region onto the isolation region. In still other
embodiments, four gate contact plugs are provided, a respective one
of which is electrically connected to a respective one of the four
gate electrodes, a first pair of which are connected to a
respective one of a pair of the gate electrodes adjacent the
vertexes thereof and a second pair of which are connected to a
respective one of a pair of the gate electrodes remote from the
vertexes thereof. In some embodiments, the second pair of gate
contact plugs are contained within the active region.
[0008] In some embodiments, the integrated circuit substrate also
includes a plurality of memory cells therein that are arranged in
an array in a row direction and in a column direction. In some
embodiments, the first direction is the row direction and the
second direction is the column direction. The four transistors may
comprise a sense amplifier for a column of the memory cells.
[0009] In still other embodiments, the active region is recessed
between the first extending portions of the gate electrodes of a
first pair of the four transistors and between the first extending
portions of the gate electrodes of a second pair of the four
transistors, so that the isolation region protrudes between the
first extending portions of the gate electrodes of the first pair
of the four transistors and between the first extending portions of
the gate electrodes of the second pair of the four transistors.
[0010] In yet other embodiments, a respective gate electrode also
includes a third extending portion that extends from an end of a
respective second extending portion that is remote from the
respective vertex and extends along the first direction. In other
embodiments, the respective vertex is a first respective vertex and
the respective second and third extending portions define a
respective second vertex therebetween. The third extending portions
may at least partially overlap the isolation regions in some
embodiments and, in other embodiments, the third extending portions
do not substantially overlap the active region. In yet other
embodiments, the ends of the first and third extending portions of
the four gate electrodes extend beyond the active region onto the
isolation region.
[0011] Yet other embodiments can include four gate contact plugs, a
respective one of which is electrically connected to a respective
one of the four gate electrodes, a pair of which are connected to a
respective one of a pair of the gate electrodes adjacent the
vertexes thereof and a pair of which are connected to a respective
one of a pair of the gate electrodes remote from the first vertexes
thereof. In some embodiments, the pair of gate contact plugs that
are connected to a respective one of a pair of the gate electrodes
remote from the first vertexes thereof are contained within the
active region. In still other embodiments, the four gate contact
plugs are four first gate contact plugs, the four transistor layout
further comprising four second gate contact plugs, a respective one
of which is electrically connected to a respective one of the four
gate electrodes, a pair of which are connected to a respective one
of a pair of the gate electrodes adjacent the second vertexes
thereof and a pair of which are connected to a respective one of a
pair of the gate electrodes on the third extensions thereof remote
from the second vertexes thereof.
[0012] In other embodiments, a respective gate electrode also
includes a fourth extending portion that extends from an end of a
respective first extending portion that is remote from the
respective first vertex to an end of the respective third extending
portion that is remote from the respective second vertex, along the
second direction. A respective gate electrode includes the first
through fourth extending portions defining a closed loop gate
electrode pattern, a respective one of which surrounds a respective
one of the drain regions. Four drain contact plugs may also be
provided, a respective one of which electrically contacts a
respective one of the drain regions in a respective one of the four
quadrants and is surrounded by a respective one of the gate
electrodes. Four first gate contact plugs may also be provided, a
respective one of which is electrically connected to a respective
midpoint of a respective one of the first and third extending
portions of the gate electrodes of a first pair of the four
transistors. Two second gate contact plugs may be provided, a
respective one of which is electrically connected to a respective
first vertex of the gate electrodes of a second pair of the four
transistors. Two third gate contact plugs also may be provided, a
respective one of which is electrically connected at a respective
intersection of a respective third and fourth gate extensions of
the gate electrodes of the second pair of the four transistors.
[0013] Integrated circuit field effect transistors according to
other embodiments include an integrated circuit substrate, an
isolation region in the integrated circuit substrate that defines
an active region, spaced apart source and drain regions in the
active region and a gate electrode on the active region between the
spaced apart source and drain regions. The gate electrode extends
across the active region and onto the isolation region and includes
therein a landing pad that is wider than a non-landing pad portion
of the gate electrode. A gate contact plug electrically contacts
the gate electrode at the landing pad. In some embodiments, the
landing pad at least partially overlaps the isolation region and
the gate contact plug at least partially overlaps the active
region. In some of these embodiments, the landing pad also at least
partially overlaps the isolation region, and the gate contact plug
also at least partially overlaps the isolation region.
[0014] In some embodiments, the landing pad is a first landing pad
and the gate contact plug is a first gate contact plug. The gate
electrode may also include a second landing pad that is wider than
the non-landing pad portion of the gate electrode, and a second
gate contact plug that electrically contacts the gate electrode at
the second landing pad. The second landing pad may at least
partially overlap the active region, and the second gate contact
plug may at least partially overlap the active region.
[0015] In some of these embodiments, the first landing pad is
located at a first end of the gate electrode and the second landing
pad is located at a second end of the gate electrode that is
opposite the first end. In other embodiments, the first and second
landing pads also at least partially overlap the isolation region.
The first and second gate contact plugs also at least partially
overlap the isolation region.
[0016] Moreover, in other embodiments, the gate electrode including
the landing pad comprises a first layer comprising polysilicon
adjacent the substrate and a second layer comprising metal silicide
on the first layer comprising polysilicon, and the gate contact
plug comprises the metal and directly contacts the second layer
comprising metal silicide. The metal may comprise tungsten.
[0017] A semiconductor device according to still other embodiments
described herein may include a device isolation disposed in a
substrate to define an active region. A gate electrode is disposed
on the active region and includes a first extending portion
extending in a first direction and a second extending portion
extending in a second direction that is different from the first
direction. A gate dielectric layer is disposed between the gate
electrode and the active region. An interlayer dielectric layer is
disposed on the substrate including the gate electrode. A gate
contact plug penetrates the interlayer dielectric layer to contact
the gate electrode. At least a portion of the gate contact plug
overlaps the active region.
[0018] In some embodiments, the first extending portion of the gate
electrode comprises a first edge portion overlapping a device
isolation pattern adjacent to one side of the active region. In
other embodiments, the second extending portion of the gate
electrode comprises a second edge portion overlapping the device
isolation pattern adjacent to another side of the active
region.
[0019] Moreover, in some embodiments, at least one of the first
extending portion or the second extending portion comprises a
landing portion and a non-landing portion. A width of the landing
portion is greater than a width of the non-landing portion, and the
gate contact plug contacts the landing portion. In other
embodiments, the first extending portion comprises the landing
portion and the non-landing portion, a portion of the landing
portion of the first extending portion overlaps the active region,
another portion of the landing portion of the first extending
portion overlaps the device isolation pattern, and the portion of
the landing portion, overlapping the device isolation pattern, is
the first edge portion. In still other embodiments, the gate
electrode further comprises a third extending portion parallel to
and facing the first extending portion, the first extending portion
and the third extending portion are respectively connected to both
ends of the second extending portion, and at least a portion of the
third extending portion overlaps the device isolation pattern.
[0020] In yet other embodiments, the gate electrode further
comprises a third extending portion facing the first extending
portion and spaced apart from the first extending portion, and a
fourth extending portion facing the second extending portion and
spaced apart from the second extending portion, and the gate
electrode has a closed loop shape in plan view. In yet other
embodiments, at least one of the first, second, third or fourth
extending portions comprises a landing portion for contacting the
gate contact plug and a non-landing portion, and a width of the
landing portion is greater than a width of the non-landing portion.
In still other embodiments, a portion of an upper surface of the
gate contact plug overlaps the device isolation pattern, and
another portion of the upper surface of the first-gate contact plug
overlaps the active region. In yet other embodiments, the entire
upper surface of the gate contact plug overlaps the active
region.
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] The accompanying drawings are included to provide a further
understanding of the inventive concept, and are incorporated in and
constitute a part of this specification. The drawings illustrate
exemplary embodiments of the inventive concept and, together with
the description, serve to explain principles of the inventive
concept. In the drawings:
[0022] FIG. 1A is a plan view of an integrated circuit device
according to various embodiments of the inventive concept;
[0023] FIG. 1B is a cross-sectional view taken along line I-I' of
FIG. 1A;
[0024] FIG. 1C is a cross-sectional view taken along line II-II' of
FIG. 1A;
[0025] FIG. 2A is a plan view illustrating a modified example of an
integrated circuit device according to embodiments of the inventive
concept;
[0026] FIG. 2B is a cross-sectional view taken along line III-III'
of FIG. 2A;
[0027] FIG. 3A is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept;
[0028] FIG. 3B is a perspective view for illustrating the gate
electrode included in the device of FIG. 3A;
[0029] FIG. 4 is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments;
[0030] FIG. 5A is a plan view of an integrated circuit device
according to other embodiments of the inventive concept;
[0031] FIG. 5B is a cross-sectional view taken along line IV-IV' of
FIG. 5A;
[0032] FIG. 6A is a circuit diagram of an NMOS sense amplifier
driver included in a sense amplifier block of an integrated circuit
device according to various embodiments of the inventive
concept;
[0033] FIG. 6B is a circuit diagram of a PMOS sense amplifier
driver included in a sense amplifier block of an integrated circuit
device according to various embodiments of the inventive
concept;
[0034] FIG. 7A is a plan view illustrating a modified example of an
integrated circuit device according to other embodiments of the
inventive concept;
[0035] FIG. 7B is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept;
[0036] FIG. 7C is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept;
[0037] FIG. 7D is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept;
[0038] FIG. 7E is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept;
[0039] FIG. 8A is a plan view of an integrated circuit device
according to still other embodiments of the inventive concept;
[0040] FIG. 8B is a cross-sectional view taken along line V-V' of
FIG. 8A;
[0041] FIG. 9A is a plan view illustrating a modified example of an
integrated circuit device according to other embodiments of the
inventive concept;
[0042] FIG. 9B is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept; and
[0043] FIG. 9C is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept.
[0044] FIG. 10A is a plan view of a conventional integrated circuit
device.
[0045] FIG. 10B is a cross-sectional view taken along line VI-VI'
of FIG. 10A.
[0046] FIG. 11 is a plan view of a conventional four transistor
layout for an integrated circuit substrate.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0047] Advantages and features of the present invention, and
implementation methods thereof will be clarified through following
embodiments described with reference to the accompanying drawings.
The present invention may, however, be embodied in different forms
and should not be construed as limited to the embodiments set forth
herein. Rather, these embodiments are provided so that this
disclosure will be thorough and complete, and will fully convey the
scope of the present invention to those skilled in the art.
Further, the present invention is only defined by scope of claims.
Like reference numerals refer to like elements throughout. As used
herein the term "and/or" includes any and all combinations of one
or more of the associated listed items and may be abbreviated as
"/".
[0048] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the invention. As used herein, the singular forms "a," "an" and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. It will be further understood
that the terms "comprises," "comprising," "having," "having,"
"includes," "including" and/or variations thereof, when used in
this specification, specify the presence of stated features,
regions, steps, operations, elements, and/or components, but do not
preclude the presence or addition of one or more other features,
regions, steps, operations, elements, components, and/or groups
thereof.
[0049] It will be understood that when an element such as a layer
or region is referred to as being "on" or extending "onto" another
element (and/or variations thereof), it can be directly on or
extend directly onto the other element or intervening elements may
also be present. In contrast, when an element is referred to as
being "directly on" or extending "directly onto" another element
(and/or variations thereof), there are no intervening elements
present. It will also be understood that when an element is
referred to as being "connected" or "coupled" to another element
(and/or variations thereof), it can be directly connected or
coupled to the other element or intervening elements may be
present. In contrast, when an element is referred to as being
"directly connected" or "directly coupled" to another element
(and/or variations thereof), there are no intervening elements
present.
[0050] It will be understood that, although the terms first,
second, etc. may be used herein to describe various elements,
components, regions, layers and/or sections, these elements,
materials, regions, layers and/or sections should not be limited by
these terms. These terms are only used to distinguish one element,
material, region, layer or section from another element, material,
region, layer or section. Thus, a first element, material, region,
layer or section discussed below could be termed a second element,
material, region, layer or section without departing from the
teachings of the present invention.
[0051] Relative terms may be used herein to describe one element's
relationship to another element as illustrated in the Figures.
These relative terms generally relate to an element's position
relative to a substrate, when the substrate is at the bottom of a
drawing. However, it will be understood that relative terms are
intended to encompass different orientations of the device in
addition to the orientation depicted in the Figures. For example,
if the structure in the Figure is turned over, elements described
as being on the "backside" of substrate would then be oriented on
"upper" surface of the substrate. The exemplary term "upper", can
therefore, encompasses both an orientation of "lower" and "upper,"
depending on the particular orientation of the figure. Similarly,
if the structure in one of the figures is turned over, elements
described as "below", "beneath" or "under" other elements would
then be oriented "above" or "over" the other elements. The
exemplary terms "below", "beneath", "under" "above" and "over" can,
therefore, encompass both an orientation of above and below. Also,
the terms "horizontal" and "vertical," and the terms "x", "y" and
"z" are used herein to describe generally orthogonal directions and
do not imply a specific orientation.
[0052] It also will be understood that, as used herein, the terms
"row" or "horizontal" and "column" or "vertical" indicate two
relative non-parallel directions that may be orthogonal to one
another. However, these terms also are intended to encompass
different orientations.
[0053] Embodiments of the present invention are described herein
with reference to cross section and perspective illustrations that
are schematic illustrations of idealized embodiments of the present
invention. As such, variations from the shapes of the illustrations
as a result, for example, of manufacturing techniques and/or
tolerances, are to be expected. Thus, embodiments of the present
invention should not be construed as limited to the particular
shapes of regions illustrated herein but are to include deviations
in shapes that result, for example, from manufacturing. For
example, a region illustrated or described as flat may, typically,
have rough and/or nonlinear features. Moreover, sharp angles that
are illustrated, typically, may be rounded. Thus, the regions
illustrated in the figures are schematic in nature and their shapes
are not intended to illustrate the precise shape of a region and
are not intended to limit the scope of the present invention.
Embodiment 1
[0054] FIG. 1A is a plan view of an integrated circuit device
according to various embodiments of the inventive concept, FIG. 1B
is a cross-sectional view taken along line I-I' of FIG. 1A, and
FIG. 1C is a cross-sectional view taken along line II-II' of FIG.
1A.
[0055] Referring to FIGS. 1A, 1B and 1C, a device isolation pattern
102 defining an active region ACT may be disposed in an integrated
circuit substrate 100 such as a semiconductor substrate
(hereinafter referred to as `substrate`). The active region ACT may
correspond to a portion of the substrate 100 enclosed by the device
isolation pattern 102. The device isolation pattern 102 may be
formed by using a trench type device isolation method. For example,
the device isolation pattern 102 may fill a trench formed in the
substrate 100. The substrate 100 may be a silicon substrate, a
germanium substrate, a silicon-germanium substrate and/or various
other microelectronic substrates including one or more layers. The
device isolation pattern 102 may include oxide, nitride and/or
oxynitride. The active region ACT may be doped with a first
conductivity type dopant.
[0056] A gate electrode 110 is disposed over the active region ACT.
As shown in FIG. 1A, the gate electrode 110 may extend in a first
direction D1 parallel to an upper surface of the substrate 100 to
cross the active region ACT in plan view. That is, the first
direction D1 may be a longitudinal direction of the gate electrode
110. As shown in FIGS. 1B and 1C, a gate dielectric layer 105 may
be disposed between the gate electrode 110 and the active region
ACT. A capping dielectric pattern 120 may be disposed on the gate
electrode 110. The capping dielectric pattern 120 may have a
sidewall self-aligned with a sidewall of the gate electrode 110.
The gate dielectric layer 110 may be a single layer or a multilayer
formed of oxide, nitride, high k dielectric and/or oxynitride. The
high k dielectric may have a higher dielectric constant than
nitride. For example, the high k dielectric may include insulating
metal oxides such as hafnium oxide, aluminum oxide, and/or the
like. The capping dielectric pattern 120 may include oxide, nitride
and/or oxynitride. The capping dielectric pattern 120 and the gate
electrode 110 may be formed by using a mask pattern (not shown)
defining the gate electrode 110.
[0057] The gate electrode 110 may be formed of a conductive
material. For example, the gate electrode 110 may include
semiconductor doped with a dopant (e.g., doped silicon, doped
silicon-germanium, doped germanium and/or the like), metal (e.g.,
titanium, tantalum, tungsten, aluminum and/or the like), conductive
metal nitride (e.g., titanium nitride, tantalum nitride and/or the
like), and/or conductive metal-semiconductor compound (e.g.,
tungsten silicide, cobalt silicide, nickel silicide, titanium
silicide and/or the like). The gate electrode 110 may be formed in
a single layer or multilayer. According to an embodiment, the gate
electrode 110 may include a doped semiconductor such as polysilicon
and a conductive metal-semiconductor compound such as a metal
silicide like tungsten silicide, sequentially stacked. In other
embodiments, the gate electrode 110 may include a conductive metal
nitride and a metal sequentially stacked. However, the present
invention is not limited thereto. The gate electrode 110 may have a
three-layer or more stack structure.
[0058] As disclosed in FIGS. 1A and 1B, the gate electrode 110 may
include a first edge portion 111 overlapping the device isolation
pattern 102. Additionally, the gate electrode 110 may include a
second edge portion 112 positioned at an opposite side to the first
edge portion 111. The second edge portion 112 may overlap another
portion of the device isolation pattern 102 positioned at an
opposite side to a portion of the device isolation pattern 102
overlapping the first edge portion 111. As shown in FIG. 1A, the
gate electrode 110 may extend in the first direction D1 to cross
both sides of the active region ACT which are parallel to a second
direction D2. The second direction D2 may be perpendicular to the
first direction D1, and may be parallel to the upper surface of the
substrate 100. The first and second edge portions 111 and 112 may
be connected to both ends of a portion overlapping the active
region ACT of the gate electrode 110. The first edge portion 111
may have a first length L1 in the first direction D1 and the second
edge portion 112 has a second length L2 in the first direction
D1.
[0059] A first source/drain region 122 and a second source/drain
region 124 may be disposed in the active regions ACT at both sides
of the gate electrode 110, respectively. The first and second
source/drain regions 122, 124 may be doped regions doped with a
second conductivity type dopant. The second conductivity type
dopant is different from the first conductivity type dopant. For
example, one of the first conductivity type dopant or the second
conductivity type dopant may be an n-type dopant and the other may
be a p-type dopant. As shown in FIG. 1C, a gate spacer 119 may be
disposed on sidewalls of the capping dielectric pattern 120 and
gate electrode 110. The gate spacer 119 may be formed of oxide,
nitride and/or oxynitride, and may be a single layer or multilayer.
An interlayer dielectric layer 130 may be disposed over an entire
surface of the substrate 100 including the gate electrode 110. The
interlayer dielectric layer 130 may be formed of oxide, nitride
and/or oxynitride and may be a single layer or multilayer.
[0060] A gate contact plug 135 may sequentially penetrate the
interlayer dielectric layer 130 and the capping dielectric pattern
120 to contact the upper surface of the gate electrode 110. An
entire lower surface of the gate contact plug 135 may contact the
gate electrode 110. At least a portion of the gate contact plug 135
may overlap the active region ACT. In other words, at least a
portion of the gate contact plug 135 may overlap the active region
ACT in a direction vertical to the upper surface of the substrate
100.
[0061] According to an embodiment, as disclosed in FIGS. 1A and 1B,
an upper surface of the gate contact plug 135 may include a first
portion TS1 overlapping the device isolation pattern 102 and a
second portion TS2 overlapping the active region ACT. In other
words, a portion of the gate contact plug 135 may overlap the
active region ACT and another portion of the gate contact plug 135
may overlap the device isolation pattern 102. As shown in FIG. 1B,
the upper surface of the gate contact plug 135 may be wider than
the lower surface thereof. By doing so, a sidewall of the gate
contact plug 135 may have an inclination structure. The first
portion TS1 of the upper surface of the gate contact plug 135 may
overlap the first edge portion 111.
[0062] The upper surface of the gate contact plug 135 has a first
width Wc1 in the first direction D1 and a second width Wc2 in the
second direction D2. At this time, the first length L1 of the first
edge portion 111 of the gate electrode 110 may be smaller than a
sum of the first width Wc1 and a horizontal distance 30 between an
end of the gate contact plug 135 overlapping the device isolation
pattern 102 and an end of the first edge portion 111. The
horizontal distance 30 may be a distance between an end of the
first portion TS1 of the upper surface of the gate contact plug 135
and the end of the first edge portion 111 in the first direction
D1. The first length L1 is greater than zero (0). The end of the
first edge portion 111 may correspond to an end of the gate
electrode 110. According to an embodiment, the horizontal distance
30 may be about 5% to about 15% of the first width Wc1. According
to an embodiment, the first length L1 of the first edge portion 111
may be smaller than the first width We 1.
[0063] If a gate contact plug contacting a gate electrode
completely overlaps a device isolation pattern, a width of an
active region, in a longitudinal direction of the gate electrode,
may be small in a given area. But, according to the above
embodiments of the inventive concept, the width of the active
region ACT in the first direction D1 can increase until the active
region ACT overlaps at least a portion of the gate contact plug 135
when a length of the gate electrode 110 in the first direction D1,
according to embodiments of the inventive concept, may be the same
as a length of the gate electrode having the gate contact plug
completely overlapping the device isolation pattern. A channel
region may be defined in the active region ACT below the gate
electrode 110. The width of the active region ACT in the first
direction D1 corresponds to a channel width of the channel region.
As the width of the active region ACT in the first direction D1
increases, the channel width increases. Therefore, the amount of
turn-on current of a field effect transistor (hereinafter referred
to as `transistor`) including the gate electrode 110 can increase.
As a result, a device which is configured for high integration and
has superior reliability can be realized.
[0064] If the gate contact plug completely overlaps the device
isolation pattern, a length of an edge portion of the gate
electrode, overlapping the device isolation pattern, may be greater
than a sum of the first width Wc1 and the horizontal distance 30,
such that a width of the active region in the longitudinal
direction of the gate electrode decreases. In this case, the
channel width of the transistor decreases and thus the amount of
turn-on current of the transistor decreases.
[0065] However, as aforementioned, according to various embodiments
of the inventive concept, at least a portion of the gate contact
plug 135 overlaps the active region ACT. Therefore, the first
length L1 may be smaller than a sum of the first width Wc1 and the
horizontal distance 30. As a result, the width of the active region
ACT in the first direction D1 can increase in the given area, such
that the amount of turn-on current of the transistor increases.
Therefore, the device can be improved or optimized for high
integration and can have superior reliability.
[0066] According to some embodiments, the second length L2 of the
second edge portion 112 may be smaller than the sum of the first
width Wc1 and the horizontal distance 30. More concretely, the
second length L2 of the second edge portion 112 may be smaller than
the first width We 1. By doing so, the width of the active region
ACT in the first direction D1 can be further increased. Of course,
the second length L2 is greater than zero (0).
[0067] In FIG. 1A, the upper surface of the gate contact plug 135
is shown in a rectangular shape. However, the present invention is
not limited thereto. By an exposure effect of a photolithography
process and/or design of layout, the upper surface of the gate
contact plug 135 may have a polygonal, circular and/or elliptical
shape in plan view. According to an embodiment, when the upper
surface of the gate contact plug 135 has a circular and/or
elliptical shape, the first width Wc1 of the gate contact plug 135
may correspond to a maximum width in the first direction D1.
[0068] According to some embodiments, as shown in FIG. 1A, the
width Wg of the gate electrode 110 in the second direction D2 may
be substantially uniform. In this case, to secure a margin for
misalignment in the second direction D2 of the gate contact plug
135, the width Wg of the gate electrode 110 may be greater than the
second width Wc2 of the gate contact plug 135. For example, the
width Wg of the gate electrode 110 may be about 110% to about 130%
of the second width Wc2 of the gate contact plug 135. The width Wg
of the gate electrode 110 may correspond to the channel length of
the channel generated in the channel region.
[0069] The gate contact plug 135 may be formed of a conductive
material. For example, the gate contact plug 135 may include metals
(e.g., tungsten, tantalum, titanium and/or copper) and conductive
metal nitrides (e.g., titanium nitride, tantalum nitride). In some
embodiments, when the gate includes a metal silicide layer such as
tungsten silicide, the gate contact plug comprises the metal, such
as tungsten. According to some embodiments, another gate contact
plug may be provided on the gate electrode 110. The other gate
contact plug may have the same size and/or shape as the gate
contact plug 135. The other gate contact plug may be laterally
spaced apart from the gate contact plug 135. At least a portion of
the other gate contact plug may overlap the active region ACT. The
other gate contact plug may partially contact the second edge
portion 112 or completely overlaps the active region ACT.
[0070] Referring to FIGS. 1A and 1C, a first source/drain-contact
plug 140 and a second source/drain-contact plug 141 may penetrate
the interlayer dielectric layer 130 to contact the first
source/drain 122 and the second source/drain 124, respectively.
Upper surfaces of the first source/drain-contact plug 140 and
second source/drain-contact plug 141 may have a bar shape extending
in parallel along the first direction D1. Due to this, a shortest
distance between a central portion of the channel region and the
source/drain-contact plugs 140, 141 may be substantially the same
as a shortest distance between an edge of the channel region and
the source/drain-contact plugs 140, 141. As a result, the amount of
turn-on current of the transistor can be increased.
[0071] As disclosed in FIGS. 1B and 1C, the upper surface of the
gate contact plug 135 may be coplanar with the upper surface of the
interlayer dielectric layer 130. Upper surfaces of the
source/drain-contact plugs 140, 141 may be coplanar with the upper
surface of the interlayer dielectric layer 130. Therefore, the
upper surface of the gate contact plug 135 may be positioned
substantially at the same level as the upper surfaces of the
source/drain-contact plugs 140, 141. However, the present invention
is not limited thereto. The upper surfaces of the
source/drain-contact plugs 140, 141 may be positioned at a lower
level or higher level than the upper surface of the gate contact
plug 135. The source/drain-contact plugs 140, 141 may be formed of
a conductive material. For example, the source/drain-contact plugs
140, 141 may include metal (e.g., tungsten, tantalum, titanium
and/or copper) and/or conductive metal nitride (e.g., titanium
nitride and/or tantalum nitride). According to some embodiments,
the source/drain-contact plugs 140, 141 may be formed of the same
material as the gate contact plug 135.
[0072] As disclosed in FIGS. 1B and 1C, a first interconnection
150a, a second interconnection 150b and a third interconnection
line 150c may be disposed on the interlayer dielectric layer 130.
The first interconnection line 150a may be connected to the gate
contact plug 135. The second interconnection line 150b may be
connected to the first source/drain-contact plug 140, and the third
interconnection line 150c may be connected to the second
source/drain-contact plug 141. The first, second and third
interconnection lines 150a, 150b and 150c may be implemented in
various shapes according to characteristics desired for the device.
According to some embodiments, the transistors shown in FIGS. 1A,
1B and 1C may be implemented as transistors (e.g., transistors of a
peripheral circuit) performing various uses and/or various
functions desired for the device.
[0073] Next, modified examples of integrated circuit devices
according to various embodiments will be described with reference
to the accompanying drawings.
[0074] FIG. 2A is a plan view illustrating a modified example of an
integrated circuit device according to an embodiment of the
inventive concept, and FIG. 2B is a cross-sectional view taken
along line III-III' of FIG. 2A.
[0075] Referring to FIGS. 2A and 2B, a gate contact plug 135 may
completely overlap the active region ACT. That is, the entire upper
surface of the gate contact plug 135 may overlap the active region
ACT. The gate electrode 110 includes a first edge portion 111a
overlapping the device isolation pattern 102. At this time, a first
length L1' of the first edge portion 111a in the first direction D1
may be smaller than a first width Wc1 of the gate contact plug 135
in the first direction D1. The first length L1' of the first edge
portion 111a is greater than zero (0). The gate electrode 110 may
further include a second edge portion 112a. The second edge portion
112a is positioned at an opposite side to the first edge portion
111a and overlaps the device isolation pattern 102. The second
length L2' of the second edge portion 112a in the first direction
D1 may be smaller than the first width Wc1 of the gate contact plug
135. The second length L2' of the second edge portion 112a is also
greater than Zero (0).
[0076] According to the present modified example, the entire upper
surface of the gate contact plug 135 overlaps the active region ACT
and the first length L1' of the first edge portion 111a may be
smaller than the first width Wc1 of the gate contact plug 135.
Also, the second length L2' of the second edge portion 112a may be
also smaller than the first width Wc1. Therefore, the width of the
active region ACT in the first direction D1 can be further
increased.
[0077] FIG. 3A is a plan view illustrating another modified example
of an integrated circuit device according to an embodiment of the
inventive concept, and FIG. 3B is a perspective view for
illustrating the gate electrode included in the device of FIG. 3A.
For description of the gate electrode in FIG. 3B, the interlayer
dielectric layer 130, the capping dielectric pattern 120, the
spacer 119 and the first source/drain-contact plug 140 are
omitted.
[0078] Referring to FIGS. 3A and 3B, a gate electrode 110a may
extend in a first direction D1 to cross over an active region ACT.
The gate electrode 110a may include a first landing portion 114, a
non-landing portion 116 and a second landing portion 115. The first
and second landing portions 114 and 115 may be connected to both
ends of the non-landing portion 116, respectively. The second
landing portion 115, the non-landing portion 116 and the first
landing portion 114 may be arranged sequentially along the first
direction D1. A first gate contact plug 135 may contact the first
landing portion 114 and a second gate contact plug 136 may contact
the second landing portion 115. The gate contact plugs 135 and 136
may not contact the non-landing portion 116. That is, the first and
second landing portions 114 and 115 of the gate electrode 110a may
be portions for contacting the gate contact plugs 135 and 136. In
FIG. 3B, the first and second gate contact plugs 135 and 136 are
shown in a square pillar shape. However, the present invention is
not limited thereto. The first and second gate contact plugs 135
and 136 may be implemented in another shape (e.g., cylindrical
shape, elliptic cylindrical shape and/or the like). A gate
dielectric layer 105 may be disposed between the gate electrode
110a and the active region ACT. Also, the capping dielectric
pattern 120 of FIGS. 1A, 1B and 1C may be disposed on the gate
electrode 110a. The gate electrode 110a may be formed of the same
material as the gate electrode 110 of FIGS. 1A, 1B and 1C.
[0079] The first landing portion 114 has a first width K1 in a
second direction D2 perpendicular to the first direction D1, and
the non-landing portion 116 has a second width K2 in the second
direction D2. At this time, the first width K1 of the first landing
portion 114 may be greater than the second width K2 of the
non-landing portion 116. Likewise, a third width K3 of the second
landing portion 115 in the second direction D2 may be greater than
the second width K2 of the non-landing portion 116. The first width
K1 of the first landing portion 114 may be equal to the third width
K3 of the second landing portion 116. The first gate contact plug
135 has a first width We 1 in the first direction D1 and a second
width Wc2 in the second direction D2. To secure a margin for
misalignment of the first gate contact plug 135, the first width K1
of the first landing portion 114 may be greater than the second
width Wc2 of the first gate contact plug 135. For example, the
first width K1 of the first landing portion 114 may be about 110%
to about 130% of the second width Wc2 of the first gate contact
plug 135. Likewise, the third width K3 of the second landing
portion 115 may be greater than a width of the second gate contact
plug 136 in the second direction D2. The widths Wc1, Wc2 of the
first gate contact plug 135 may be respectively equal to the widths
of the second gate contact plug 136 corresponding thereto.
Therefore, the third width K3 of the second landing portion 115 may
be about 110% to 130% of the second width Wc2 of the first gate
contact plug 135.
[0080] The first landing portion 114 may overlap some portion of
the device isolation pattern 102 and some portion of the active
region ACT adjacent thereto. Also, the upper surface of the first
gate contact plug 135 may also overlap some portion of the device
isolation pattern 102 and some portion of the active region ACT
adjacent thereto. At this time, the portion 111b of the first
landing portion 114 overlapping the device isolation pattern 102
may have a first length La in the first direction D1. The first
length La may be smaller than a sum of the first width Wc1 and a
first horizontal distance 30a. The first horizontal distance 30a
may be a horizontal distance in the first direction D1 between one
end of the first gate contact plug 135 overlapping the device
isolation pattern 102 and one end of the portion 111b of the first
landing portion 114. The portion 111b of the first landing portion
114 overlapping the device isolation pattern 102 may correspond to
a first edge portion of the gate electrode 110a overlapping the
device isolation pattern 102. The first length La is greater than
zero (0). For example, the first horizontal length 30a may be about
5% to about 15% of the first width Wc1. According to an embodiment,
the first length La may be smaller than the first width We 1.
[0081] Similarly to this, the second landing portion 115 may
overlap another portion of the device isolation pattern 102 and
another portion of the active region ACT adjacent thereto. Also, a
portion of the upper surface of the second gate contact plug 136
may overlap the device isolation pattern 102 and another portion
may overlap the active region ACT. A portion 112b of the second
landing portion 115 overlapping the device isolation pattern 102
may have a second length Lb in the first direction D1. The second
length Lb may be smaller than a sum of a width of the second gate
contact plug 136 in the first direction D1 and a second horizontal
distance 30b. The second horizontal distance 30b may be a
horizontal distance in the first direction D1 between one end of
the second gate contact plug 136 overlapping the device isolation
pattern 102 and one end of the portion 112b of the second landing
portion 115. The portion 112b of the second landing portion 115
overlapping the device isolation pattern 102 may correspond to a
second edge portion overlapping the device isolation pattern 102 of
the gate electrode 110a. The second length Lb is greater than zero
(0). For example, the second horizontal distance 30b may be about
5% to about 15% of the width of the second gate contact plug 136 in
the first direction D1. According to some embodiments, the second
length Lb may be smaller than the width of the second gate contact
plug 136 in the first direction D1.
[0082] The widths K1, K2 and K3 of the first landing portion 114,
non-landing portion 116 and second landing portion 115 may
correspond to channel lengths of a channel region defined below the
gate electrode 110a. As aforementioned, the widths of the first and
second landing portions 114 and 115 may be greater than the width
K2 of the non-landing portion 116. Therefore, the channel lengths
below the landing portions 114 and 115 may be greater than the
channel length below the non-landing portion 116. According to the
present modified example, since each of the first and second
landing portions 114 and 115 overlaps the device isolation pattern
102 and the active region ACT, the first and second landing
portions 114 and 115 may cover some portions of a boundary of the
device isolation pattern 102 and the active region ACT.
[0083] The channel region defined below the gate electrode 110a may
include first portions and a second portion. The first portions of
the channel region are adjacent to the boundary and are covered by
the landing portions 114 and 115, and the second portion of the
channel region is covered by the non-landing portion 116. In the
case where an operation voltage is applied to the gate electrode
110a, an electric field may be concentrated on the boundary. In
other words, the intensity of a first electric field provided to
the first portion of the channel region by the operation voltage
may be greater than that of a second electric field provided to the
second portion of the channel region. Due to this, the first
portion of the channel region may be turned on before the second
portion of the channel region is turned on, so that leakage current
may be generated. However, according to the present modified
example, the channel length below the landing portions 114 and 115
is longer than the channel length below the non-landing portion
116. Therefore, the resistance of the first portion of the channel
region may be greater than the resistance of the second portion of
the channel region and thus leakage current through the first
portions of the channel region may be minimized by the landing
portions 114 and 115. As a result, since the landing portions 114
and 115 and the gate contact plugs 135 and 136 partially overlap
the active region ACT, the amount of turn-on current of the
transistor within a given area can be increased, and since the
landing portions 114 and 115 cover the boundary, leakage current of
the transistor can be reduced or minimized.
[0084] FIG. 4 is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments.
[0085] Referring to FIG. 4, a gate electrode 110b may extend in a
first direction D1 to cross over an active region ACT. A gate
dielectric layer (see 105 of FIGS. 1B and 1C) may be disposed
between the gate electrode 110b and the active region ACT, and a
capping dielectric pattern (see 120 of FIGS. 1B and 1C) may be
disposed on the gate electrode 110b.
[0086] The gate electrode 110b may include a landing portion 114a
and non-landing portions 116a and 116b. According to the present
modified example, the landing portion 114a may completely overlap
the active region ACT. That is, a whole of the landing portion 114a
may overlap the active region ACT. Therefore, a gate contact plug
135 contacting an upper surface of the landing portion 114a may
completely overlap the active region ACT. The landing portion 114a
may be disposed between a first non-landing portion 116a and a
second non-landing portion 116b. The gate electrode 110b may
include a first edge portion 111c and a second edge portion 112c
which overlap the device isolation pattern 102. The first edge
portion 111c may be a portion of the first non-landing portion 116a
and the second edge portion 112c may be a portion of the second
non-landing portion 116b. The first edge portion 111c may have a
first length La' in the first direction D1 and the second edge
portion 112c may have a second length Lb' in the first direction
D1. As the landing portion 114a completely overlaps the active
region ACT, the first length La' of the first edge portion 111c of
the gate electrode 110b may be smaller than a width Wc1 of the gate
contact plug 135 in the first direction. Likewise, the second
length Lb' of the second edge portion 112c of the gate electrode
110b may be smaller than the width Wc1 of the gate contact plug
135.
[0087] According to the present modified example, an entire region
of the landing portion 114a may overlap the active region ACT.
Therefore, the first and second lengths La' and Lb' may be smaller
than the width Wc1 of the gate contact plug 135. As a result, the
width of the active region ACT in the first direction D1 within a
given area is increased and thus the channel width of the
transistor within the given area can be increased.
[0088] According to an embodiment, prior to forming the gate
electrode 110b, dopant ions for controlling the threshold voltage
of the transistor may be selectively implanted into an edge portion
of the active region ACT adjacent to the boundary between the
device isolation pattern 102 and the active region ACT. At this
time, the dopant ions for controlling the threshold voltage may not
be implanted into a central portion of the active region ACT.
Accordingly, the threshold voltage of the first portion of the
channel region adjacent to the boundary and the threshold voltage
of the second portion of the channel region defined at a central
portion of the active region ACT may be different. By doing so, the
leakage current due to the concentration of the electric field on
the boundary can be reduced or minimized. That is, an absolute
value of the threshold voltage of the first portion of the channel
region is made greater than an absolute value of the threshold
voltage of the second portion of the channel region, thereby
allowing the reducing or minimizing of the leakage current through
the first portion of the channel region.
[0089] Additional discussion of various embodiments of the
inventive concept as illustrated in FIGS. 1A-4 and as described
herein, will now be provided. Specifically, various embodiments of
FIGS. 1A-4 can provide an integrated circuit field effect
transistor that comprises an integrated circuit substrate 100, an
isolation region 102 in the integrated circuit substrate that
defines an active region ACT, and spaced apart source and drain
regions 122 and 124 in the active region. A gate electrode 110,
110a, 110b may be provided on the active region ACT between the
spaced apart source and drain regions 122 and 124. The gate
electrode extends across the active region ACT and onto the
isolation region 102, and includes therein a landing pad 114, 115
that is wider than a non-landing pad portion 116 of the gate
electrode 110. A gate contact plug 135, 136 electrically contacts
the gate electrode 110, 110a, 110b at the landing pad 114, 115,
wherein the landing pad at least partially overlaps the active
region ACT and wherein the gate contact plug at least partially
overlaps the active region ACT. In other embodiments, the landing
pad 114, 115 may also at least partially overlap the isolation
region 102 and/or the gate contact plug 135, 136 may also partially
overlap the isolation region 102. A single landing pad and a single
gate contact plug may be provided in some embodiments (e.g., FIG.
4). In other embodiments, first and second landing pads and
corresponding first and second gate contacts may be provided, for
example at opposite ends of the gate electrode (e.g., FIGS.
3A-3B).
[0090] In some embodiments, the gate electrode 110 including the
landing pad(s) comprises a first layer comprising polysilicon
adjacent the substrate 100 and a second layer comprising metal
silicide on the first layer comprising polysilicon, and a gate
contact plug 135, 136 comprising the metal directly contacts the
second layer comprising metal silicide. In other embodiments, the
metal comprises tungsten.
[0091] Integrated circuit field effect transistors according to
other embodiments of FIGS. 1A-4 include an integrated circuit
substrate 100, an isolation region 102 in the integrated circuit
substrate that defines an active region ACT and spaced apart source
and drain regions 122, 124 in the active region ACT. A gate
electrode 110, 110a is provided on the active region between the
spaced apart source and drain regions 122, 124. The gate electrode
110, 110a extends across the active region and into the isolation
region. A gate contact plug 135, 136 electrically contacts the gate
electrode and at least partially overlaps the active region. The
gate electrode comprises a first layer comprising polysilicon
adjacent the substrate and a second layer comprising metal silicide
on the first layer comprising polysilicon. The gate contact plug
135, 136 comprises the metal and directly contacts the second layer
comprising metal silicide. In some embodiments, the metal comprises
tungsten and/or the gate contact plug can fully overlap the active
region. In still other embodiments, a gate electrode 110, 110a is
provided on the active region between the spaced apart source and
drain regions 122, 124, the gate electrode extending across the
active region ACT and onto the isolation region 102. A gate contact
plug 135, 136 electrically contacts the gate electrode. The gate
contact plug 135, 136 partially overlaps the isolation region 102
and partially overlaps the active region ACT.
[0092] Various embodiments described above may arise from
recognition that conventional devices illustrated in FIGS. 10A and
10B may include an isolation region 1102 in an integrated circuit
substrate 1100 that defines spaced apart first and second
source/drain regions 1122/1124, a gate electrode 1110 that extends
across the active region ACT onto the isolation region 1102, and a
source contact and a drain contact 1140 and 1141, respectively.
First and second landing pads 1114, 1115 may be provided on the
isolation region 1102 that does not extend over the active region
ACT. More specifically, when gate polysilicon 1110 is provided on a
gate dielectric layer 1105 and a tungsten (or other metal) silicide
layer 1120 is provided on the gate polysilicon layer 1110, the
tungsten silicide material 1120 must be removed, and one or more
polysilicon gate contact plugs 1135, 1136 are provided that
penetrate through the tungsten silicide 1120 to directly contact
the gate polysilicon layer 1110. However, a chemical solution for
removing the tungsten silicide 1120 penetrates the gate insulating
layer 1105 through the grain boundaries of the gate polysilicon
1110 and deteriorates the gate oxide 1105. Accordingly,
conventionally, it is forbidden to place the polysilicon gate
contact plugs 1135, 1136 over the active region ACT. Rather, the
gate contact plugs 1135, 1136 are placed over the isolation region
1102. Stated differently, the active region ACT is not allowed to
overlap with the gate contact plugs 1135, 1136. This may cause the
transistor width to shrink, which may limit the drive current
thereof.
[0093] However, according to some embodiments described herein in
connection with FIGS. 1A-4, the gate contact plugs do not comprise
polysilicon but, rather, comprise the metal of the metal silicide
layer. Thus, the metal silicide layer need not be etched to form a
gate contact plug and the gate contact plug need not directly
contact the gate polysilicon layer. Accordingly, the gate contact
plug(s) can be made to at least partially, and in some embodiments
fully, overlap the active region. The active region can, therefore,
increase in width, which can allow greater drive currents, higher
reliability and/or higher integration.
Embodiment 2
[0094] FIG. 5A is a plan view of an integrated circuit device
according to other embodiments of the inventive concept, and FIG.
5B is a cross-sectional view taken along line IV-IV' of FIG.
5A.
[0095] Referring to FIGS. 5A and 5B, a device isolation pattern 102
defining an active region ACT is disposed in a substrate 100. A
first gate electrode 210a may be disposed over the active region
ACT. The active region ACT may correspond to a portion of the
substrate 100 enclosed by the device isolation pattern 102, and may
be doped with a first conductivity type dopant. As shown in FIG.
5A, the first gate electrode 210a may include a first extending
portion 207 extending in a first direction Da and a second
extending portion 208 extending in a second direction Db which is
different from the first direction Da. The first and second
directions Da and Db are parallel to an upper surface of the
substrate 100. The second direction Db may be perpendicular to the
first direction Da.
[0096] The first and second extending portions 207 and 208 of the
first gate electrode 210a may be connected to each other over the
active region ACT. As shown in FIG. 5A, the first extending portion
207 may include a first edge portion 211 overlapping some portion
of the device isolation pattern 102. The first edge portion 211 of
the first extending portion 207 may overlap a portion of the device
isolation pattern 102 adjacent to one side of the active region ACT
parallel to the second direction Db. The second extending portion
208 may include a second edge portion 212 overlapping another
portion of the device isolation pattern 102. The second edge
portion 212 of the second extending portion 208 may overlap another
portion of the device isolation pattern 102 adjacent to another
side of the active region ACT parallel to the first direction Da.
The first edge portion 211 of the first gate electrode 210a may
have a first length M1 in the first direction Da, and the second
edge portion 212 of the first gate electrode 210a may have a second
length M2 in the second direction Db.
[0097] A channel region may be defined in the active region ACT
below the first gate electrode 210a. The channel region may include
a first sub region positioned below the first extending portion 207
and a second sub region positioned below the second extending
portion 208. A channel width of the channel region may be equal to
a sum of a channel width of the first sub region in the first
direction Da and a channel width of the second sub region in the
second direction Db. The channel region may have a channel length
in several directions. For example, the first sub region may have a
first channel length corresponding to the width of the first
extending portion 207 in the second direction Db, and the second
sub region may have a second channel length corresponding to the
width of the second extending portion 208 in the first direction
Da. That is, the first and second channel lengths may extend in
different directions.
[0098] A second gate electrode 210b may be disposed spaced apart
from the first gate electrode 210a in the first direction Da. A
third gate electrode 210c may be disposed spaced apart from the
first gate electrode 210a in the second direction Db. A fourth gate
electrode 210d may be disposed spaced apart from the third gate
electrode in the first direction Da. In other words, the first,
second, third and fourth gate electrodes 210a, 210b, 210c and 210d
may be arranged two-dimensionally along a row direction and a
column direction on one active region ACT. The row direction is
perpendicular to the column direction. The row direction may be
parallel to the first direction Da and the column direction may be
parallel to the second direction Db. The first, second, third and
fourth gate electrodes 210a, 210b, 210c and 210d may be spaced
apart from one another. According to an embodiment, the second gate
electrode 210b may have a substantially symmetric structure to the
first gate electrode 210a with respect to a first virtual straight
line Vb passing through a central point C of the active region ACT
and extending in the second direction Db. The third gate electrode
210c may have a substantially symmetric structure to the first gate
electrode 210a with respect to a second virtual straight line Va
passing through the central point C and extending in the first
direction Da. The fourth gate electrode 210d may have a
substantially symmetric structure to the third gate electrode 210c
with respect to the first virtual straight line Vb. In other words,
the second gate electrode 210b may have a substantially symmetric
structure to the first gate electrode 210a in the row direction.
The third gate electrode 210c may have a substantially symmetric
structure to the first gate electrode 210a in the column direction.
The fourth gate electrode 210d may have a substantially symmetric
structure to the third gate electrode 210c in the row
direction.
[0099] As disclosed in FIG. 5B, a gate dielectric layer 205 may be
disposed between the active region ACT and the gate electrodes
210a, 210b, 201c, 210d. A capping dielectric pattern 220 may be
disposed on each of the gate electrodes 210a, 210b, 210c and 210d.
A gate spacer 219 may be disposed on sidewalls of the gate
electrodes 210a, 210b, 210c and 210d. A source region 223 may be
disposed in the active region ACT between the first, second, third
and fourth gate electrodes 210a, 210b, 210c and 210d. As shown in
FIG. 5A, the source region 223 may have a "+" shape in plan view. A
first drain region 222a may be disposed in the active region ACT at
one side of the first gate electrode 210a opposite to the source
region 223, and a second drain region 222b may be disposed in the
active region ACT at one side of the second gate electrode 210b
opposite to the source region 223. A third drain region 222c may be
disposed in the active region ACT at one side of the third gate
electrode 210c opposite to the source region 223, and a fourth
drain region 222d may be disposed in the active region ACT at one
side of the fourth gate electrode 210d opposite to the source
region 223. The source region 223 and the drain regions 222a, 222b,
222c and 222d may be doped with a second conductivity type dopant.
The first, second, third and fourth gate electrodes 210a, 210b,
210c and 210d may be included in a first transistor, a second
transistor, a third transistor and a fourth transistor,
respectively. The first, second, third and fourth transistors may
share the source region 223. The gate dielectric layer 205, the
capping dielectric pattern 220 and the gate spacer 219 may be
formed of the same materials as the gate dielectric layer 105, the
capping dielectric pattern 120 and the gate spacer 119 disclosed in
FIGS. 1B and 1C, respectively. The gate electrodes 210a, 210b, 210c
and 210d may be formed of the same material as the gate electrode
110 of FIGS. 1A, 1B and 1C.
[0100] An interlayer dielectric layer 130 may be disposed over an
entire surface of the substrate 100 including the gate electrodes
210a, 210b, 210c and 210d. A first gate contact plug 235a
penetrates the interlayer dielectric layer 130 to contact the first
gate electrode 210a. At this time, at least a portion of the first
gate contact plug 235a may overlap the active region ACT. The first
gate contact plug 235a may sequentially penetrate the interlayer
dielectric layer 130 and the capping dielectric pattern 220 on the
first gate electrode 210a to contact the first gate electrode 210a.
An upper surface of the first gate contact plug 235a has a first
width Wca in the first direction Da and a second width Wcb in the
second direction Db.
[0101] As shown in FIG. 5A, according to an embodiment, an entire
region of the first gate contact plug 235a may overlap the active
region ACT. In this case, the first length M1 of the first edge
portion 211 of the first gate electrode 210a may be smaller than
the first width Wca of the first gate contact plug 235a. The second
length M2 of the second edge portion 212 of the first gate
electrode 210a may be smaller than the second width Wcb of the
first gate contact plug 235a.
[0102] Alternatively, according to other embodiments, a first
portion of the first gate contact plug 235a may contact the first
edge portion 211 and a second portion of the first gate contact
plug 235a may overlap the active region ACT adjacent to the first
edge portion 211. In this case, the first length M1 of the first
edge portion 211 may be smaller than a sum of the first width Wca
and a horizontal distance in the first direction Da between one end
of the first edge portion 211 on the device isolation pattern 102
and one end of the first gate contact plug 235a overlapping the
device isolation pattern 102. The horizontal distance in the first
direction Da may be about 5% to about 15% of the first width Wca.
The first length M1 may be greater than zero (0).
[0103] According to still other embodiments, the first portion of
the first gate contact plug 235a may contact the second edge
portion 212 and the second portion of the first gate contact plug
235a may overlap the active region ACT adjacent to the second edge
portion 212. In this case, the second length M2 of the second edge
portion 212 may be smaller than a sum of the second width Wcb and a
horizontal distance in the second direction Db between one end of
the second edge portion 212 on the device isolation pattern 102 and
one end of the first gate contact plug 235a overlapping the device
isolation pattern 102. The horizontal distance in the second
direction Db may be about 5% to about 15% of the second width Web.
The second length M2 may be greater than zero (0).
[0104] As described above, at least some of the first gate contact
plug 235a overlaps the active region ACT. By doing so, it is
possible to increase the size of the active region ACT within a
given area. Also, the first gate electrode 210a may include channel
lengths extending in a plurality of different directions. As a
result, the amount of turn-on current of the transistor within the
given area can be increased to thus realize an integrated circuit
device which can be improved or optimized for high integration and
can have superior reliability. Also, four transistors may be formed
in the active region and may share the source region 223.
Therefore, the area occupied by the four transistors may be
decreased to thus increase the amount of turn-on current of the
transistors.
[0105] A second gate contact plug 235b, a third gate contact plug
235c and a fourth gate contact plug 235d may sequentially penetrate
the interlayer dielectric layer 130 and the capping dielectric
pattern 220 to contact the second, third and fourth gate electrodes
210b, 210c and 210d, respectively. At least a portion of each of
the second, third and fourth gate electrodes 210b, 210c, and 210d
may overlap the active region ACT. According to an embodiment, the
positions of the first to fourth gate contact plugs 235a, 235b,
235c and 235d may be controlled according to the layout of
interconnection lines (not shown) connected thereto. According to
an embodiment, the third gate contact plug 235c may be offset from
a virtual straight line which passes through a central point of the
upper surface of the first gate contact plug 235a and extends in
the second direction Db. The second gate contact plug 235b may have
a substantially symmetric structure to the first gate contact plug
235a with respect to the first virtual straight line Vb. The fourth
gate contact plug 235d may have a substantially symmetric structure
to the third gate contact plug 235c with respect to the first
virtual straight line Vb. The first to fourth gate contact plugs
235a, 235b, 235c and 235d may be formed of the same material as the
gate contact plugs 135 and 136 of FIGS. 1A, 1B and 1C.
[0106] A first drain-contact plug 240a may penetrate the interlayer
dielectric layer 130 to be connected to the first drain region
222a. A source-contact plug 241 may penetrate the interlayer
dielectric layer 130 to be connected to the source region 223. As
shown in FIG. 5A, an upper surface of the first drain-contact plug
240a may have a bar shape extending along one direction in plan
view. An extending length of the first extending portion 207 of the
first gate electrode 210a may be different from that of the second
extending portion 208. The upper surface of the first drain-contact
plug 240a may extend in parallel to a longer one of the first or
second extending portions 207 or 208. For example, as shown in FIG.
5A, in the case where the extending length of the second extending
portion 208 is longer than that of the first extending portion 207,
the upper surface of the drain-contact plug 240a may extend in
parallel to the second extending portion 208. An upper surface of
the source-contact plug 241 may have a bar shape extending in
parallel to the upper surface of the first drain-contact plug 240a
in plan view. According to an embodiment, an extending length of
the source-contact plug 241 may be different from an extending
length, of the upper surface of the first drain-contact plug 240a.
For example, as shown in FIG. 5A, the extending length of the
source-contact plug 241 may be longer than the extending length of
the first drain-contact plug 240a. In this case, a plan area of the
source region 223 may be wider than that of the first drain region
222a. As the source region 223 is shared by the four transistors, a
plurality of the source-contact plugs 241 may be disposed on the
source region 223.
[0107] A second drain-contact plug 240b, a third drain-contact plug
240c and a fourth drain-contact plug 240d may penetrate the
interlayer dielectric layer 130 to be connected to the second,
third and fourth drain regions 222b, 222c and 222d, respectively.
Upper surfaces of the second, third and fourth drain-contact plugs
240b, 240c and 240d may also extend in parallel to the upper
surface of the source-contact plug 241.
[0108] Integrated circuit devices according to embodiments may
include a plurality of sense amplifier blocks. Each of the
plurality of sense amplifier blocks may include an NMOS sense
amplifier driver and a PMOS sense amplifier driver. According to
some embodiments, the transistors shown in FIGS. 5A and 5B may be
transistors included in the NMOS sense amplifier driver or the PMOS
sense amplifier driver. The sense amplifier drivers will be
described with reference to the accompanying drawings.
[0109] FIG. 6A is a circuit diagram of an NMOS sense amplifier
driver included in a sense amplifier block of the device according
to embodiments of the inventive concept.
[0110] Referring to FIG. 6A, the NMOS sense amplifier driver in the
sense amplifier block may include a first NMOS transistor N1 and a
second NMOS transistor N2. A gate of the first NMOS transistor N1
may be electrically connected to a bit bar line BLB and a drain of
the first NMOS transistor N1 may be electrically connected to a bit
line BL. A source of the first NMOS transistor N1 may be
electrically connected to a ground voltage supply line LAB. A gate
of the second NMOS transistor N2 may be electrically connected to
the bit line BL and a drain of the second NMOS transistor N1 may be
electrically connected to the bit bar line BLB. A source of the
second NMOS transistor N2 may be electrically connected to the
ground voltage supply line LAB. Thus, the first and second NMOS
transistors N1 and N2 may be connected in a latch structure.
[0111] Referring to FIGS. 5A and 6A, according to an embodiment,
the first, second, third and fourth transistors including the first
to fourth gate electrodes 210a, 210b, 210c and 210d respectively
may be NMOS transistors. At this time, the first transistor
including the first gate electrode 210a may correspond to the first
NMOS transistor N1 of the NMOS sense amplifier driver, and the
third transistor including the third gate electrode 210c may
correspond to the second NMOS transistor N2 of the NMOS sense
amplifier driver. In this case, the first drain-contact plug 240a
and the third gate contact plug 235c may be electrically connected
to a first bit line and the third drain-contact plug 240c and the
first gate contact plug 235a may be electrically connected to a
first bit bar line. The source-contact plug 241 may be electrically
connected to the ground voltage supply line LAB. The first and
third transistors including the first and third gate electrodes
210a and 210c may be included in a first NMOS sense amplifier
driver.
[0112] Similarly to this, the second and fourth transistors
respectively including the second and fourth gate electrodes 210b
and 210d may be included in a second NMOS sense amplifier driver.
The second transistor including the second gate electrode 210b may
correspond to the first NMOS transistor N1 in the second NMOS sense
amplifier driver, and the fourth transistor including the fourth
gate electrode 210d may correspond to the second NMOS transistor N2
in the second NMOS sense amplifier driver. In this case, the second
drain-contact plug 240b and the fourth gate contact plug 235d may
be electrically connected to a second bit line and the fourth
drain-contact plug 240d and the second gate contact plug 235b may
be electrically connected to a second bit bar line.
[0113] The first bit line and the first bit bar line connected to
the first NMOS sense amplifier driver are different from the second
bit line and the second bit bar line connected to the second NMOS
sense amplifier driver, respectively. The first to fourth
transistors including the first to fourth gate electrodes 210a,
210b, 210c and 210d may constitute a pair of NMOS sense amplifier
drivers (that is, the first and second NMOS sense amplifier
drivers). The pair of the NMOS sense amplifier drivers may be
included in a pair of sense amplifier blocks, respectively.
[0114] FIG. 6B is a circuit diagram of a PMOS sense amplifier
driver included in a sense amplifier block of a device according to
embodiments of the inventive concept.
[0115] Referring to FIG. 6B, the PMOS sense amplifier driver in the
sense amplifier block may include a first PMOS transistor P1 and a
second PMOS transistor P2. A gate of the first PMOS transistor P1
may be electrically connected to a bit bar line BLB and a drain of
the first PMOS transistor P1 may be electrically connected to a bit
line BL. A source of the first PMOS transistor P1 may be
electrically connected to a power supply line LA. A gate of the
second PMOS transistor P2 may be electrically connected to the bit
line BL and a drain of the second PMOS transistor P2 may be
electrically connected to the bit bar line BLB. A source of the
second PMOS transistor P2 may be electrically connected to the
power supply line LA. Thus, the first and second PMOS transistors
P1 and P2 may be connected in a latch structure.
[0116] Referring to FIGS. 5A and 6B, according to an embodiment,
the first to fourth transistors respectively including the first to
fourth gate electrodes 210a, 210b, 210c and 210d may be PMOS
transistors. In this case, the first transistor including the first
gate electrode 210a may correspond to the first PMOS transistor P1
of the PMOS sense amplifier driver, and the third transistor
including the third gate electrode 210c may correspond to the
second PMOS transistor P2 of the PMOS sense amplifier driver. In
this case, the first drain-contact plug 240a and the third gate
contact plug 235c may be electrically connected to a first bit line
and the third drain-contact plug 240c and the first gate contact
plug 235a may be electrically connected to a first bit bar line.
The source-contact plug 241 may be electrically connected to the
power supply line LA. The first and third transistors including the
first and third gate electrodes 210a and 210c may be included in a
first PMOS sense amplifier driver.
[0117] Similarly to this, the second and fourth transistors
including the second and fourth gate electrodes 210b and 210d may
be included in a second PMOS sense amplifier driver. The second
transistor including the second gate electrode 210b may correspond
to the first PMOS transistor P1 of the second PMOS sense amplifier
driver, and the fourth transistor including the fourth gate
electrode 210d may correspond to the second PMOS transistor P2 of
the second PMOS sense amplifier driver. In this case, the second
drain-contact plug 240b and the fourth gate contact plug 235d may
be electrically connected to a second bit line and the fourth
drain-contact plug 240d and the second gate contact plug 235b may
be electrically connected to a second bit bar line.
[0118] The first to fourth transistors including the first to
fourth gate electrodes 210a, 210b, 210c and 210d may constitute a
pair of PMOS sense amplifier drivers (that is, the first and second
PMOS sense amplifier drivers). The pair of the PMOS sense amplifier
drivers may be included in a pair of sense amplifier blocks,
respectively.
[0119] According to an embodiment, each sense amplifier block
included in the device may include the NMOS sense amplifier driver
and the PMOS sense amplifier driver. In this case, a transistor
group including the transistors including the gate electrodes 210a,
210b, 210c and 210d of FIGS. 5A and 5B may be provided in plurality
in the device. At this time, any one of the plurality of transistor
groups may be implemented in the pair of the NMOS sense amplifier
drivers respectively being included in the pair of sense amplifier
block and another one may be implemented in the pair of the PMOS
sense amplifier driver respectively being included in the pair of
sense amplifier block.
[0120] As described above, the transistors disclosed in FIGS. 5A
and 5B may be implemented in a sense amplifier driver in the sense
amplifier block. However, the present invention is not limited
thereto. The transistors disclosed in FIGS. 5A and 5B may be
transistors performing other use and/or other function.
[0121] Additional discussion of various embodiments of FIGS. 5A-6B
will now be provided. More specifically, FIGS. 5A-6B illustrate
four transistor circuit layouts for an integrated circuit substrate
according to various embodiments. These layouts include an
isolation region 102 in an integrated circuit substrate 100 defines
an active region ACT that extends along first and second different
directions Da, Db, respectively. A + shaped common source region
223 of the four transistors T1, T2, T3, T4 extends from a center C
of the active region along both the first and second directions Da,
Db, as defined by virtual lines Va, Vb, respectively, to define
four quadrants Q1, Q2, Q3 and Q4 of the active region ACT that are
outside the common source region 223. Four drain regions 240a,
240b, 240c and 240d are provided, a respective one of which is in a
respective one of the four quadrants Q1, Q2, Q3 and Q4, and spaced
apart from the common source region 223. Four gate electrodes 210a,
210b, 210c and 210d are also provided, a respective one of which is
in a respective one of the four quadrants Q1, Q2, Q3 and Q4 between
the common source region 223 and a respective one of the four drain
regions 240a, 240b, 240c and 240d. A respective gate electrode
includes a first vertex V1 and first and second extending portions
207 and 208, respectively. The first extending portions 207 extend
from the vertex V1 along the first direction Da, and the second
extending portions 208 extend from the vertex V1 along the second
direction Db.
[0122] In other embodiments, the drain regions and the gate
electrodes of a first pair of the four transistors, such as
transistors T1 and T2, are symmetric with respect to the drain
regions and the gate electrodes of a second pair of the four
transistors, such as T3 and T4, about a portion of the common
source region 223 that extends from the center of the active region
C along the first direction Da, i.e., about virtual line Va. In
other embodiments, the drain regions and the gate electrodes of a
first pair of the four transistors, such as T1 and T3, are
symmetric with respect to the drain regions and the gate electrodes
of a second pair of the four transistors, such as T2 and T4, about
a portion of the common source region 223 that extends from the
center C of the active region along the second direction Db, i.e.,
symmetric about the virtual line Vb.
[0123] Various embodiments of FIGS. 5A-6B also include four drain
contact plugs 240a, 240b, 240c and 240d, a respective one of which
electrically contacts a respective one of the drain regions 240a,
240b, 240c, 240d in a respective one of the four quadrants Q1-Q4.
The drain regions, the gate electrodes and the drain contact plugs
may be symmetric about the first virtual line Va and/or about the
second virtual line Vb.
[0124] Various embodiments of FIGS. 5A-6B also include a pair of
source contact plugs 241, a first one of which is between the
second extending portions 208 of the gate electrodes of a first
pair of the four transistors, such as T1, T2, and a second one of
which is between the second extending portions 208 of the gate
electrodes of a second pair of the four transistors, such as T3,
T4. The drain regions, the gate electrodes and the source electrode
of a first pair of transistors may be symmetric with the
corresponding regions of a second pair of the four transistors, and
the source electrode of the second pair of transistors about the
virtual line Va and/or Vb.
[0125] Moreover, in some embodiments, ends 211 and/or 212 of the
first and second extending portions of the four gate electrodes may
extend beyond the active region ACT onto the isolation region 102.
Moreover, four gate contact plugs 235a, 235b, 235c and 235d may be
provided, a respective one of which is electrically connected to a
respective one of the four gate electrodes 210a, 210b, 210c, 210d.
In some embodiments, a pair of gate contact plugs 235a, 235b are
connected to a respective one of the pair of electrodes adjacent
the first vertices V1 thereof, and a second pair 235c, 235d of
which are connected to a respective one of the pair of the gate
electrodes remote from the first vertices V1 thereof. The gate
contact plugs 235c and 235d may be contained within the active
regions, as may the gate contact plugs 235a, 235b.
[0126] Various embodiments of four transistor layouts that are
described herein may be contrasted with conventional four
transistors layouts as illustrated, for example, in FIG. 11. As
shown in FIG. 11, an isolation region 1202 defines two spaced apart
active regions ACT1 and ACT2. For a pair of transistors, a source
region and a source contact 1241, and a drain region and a drain
contact 1240, are provided within a given active region ACT1, ACT2,
with a given gate electrode 1210 extending between the source
contact 1241 and a respective drain contact 1240. The gate
electrodes 1210 include gate contact plugs 1236, which are provided
on the isolation region 1202, and do not overlap the active regions
ACT1 or ACT2.
[0127] In sharp contrast, various embodiments described herein may
include a single active region ACT for the four transistors, and a
source region which may extend in both directions Da and Db, to
provide a + shaped common source region for the four
transistors.
[0128] Next, various modified examples of the present embodiments
will be described with reference to the accompanying drawings.
According to the modified examples, the gate electrode may have
various plan shapes. A description will be given of main features
of the modified examples. In the following modified examples, a
gate dielectric layer is disposed between the gate electrode and
the active region, and a capping dielectric pattern such as the
capping dielectric pattern 220 of FIG. 5B may be disposed on the
gate electrode. An upper surface of the capping dielectric pattern
on the gate electrode in each modified example may have the same
shape as the upper surface of the gate electrode.
[0129] FIG. 7A is a plan view illustrating a modified example of an
integrated circuit device according to other embodiments of the
inventive concept.
[0130] Referring to FIG. 7A, a first gate electrode 210a1 may be
disposed over an active region ACT. The first gate electrode 210a1
may include a first extending portion 207 extending in a first
direction Da, a second extending portion 208 extending in a second
direction Db, and a third extending portion 209 extending in the
first direction Da. The third extending portion 209 may face the
first extending portion 207 and may be spaced apart from the first
extending portion 207. The first and third extending portions 207
and 209 may be connected to both ends of the second extending
portion 208, respectively. At least a portion of the third
extending portion 209 may overlap a device isolation pattern 102.
According to the present modified example, the second extending
portion 208 may not overlap the device isolation pattern 102.
[0131] A plurality of first-gate contact plugs 235a and 236a may be
connected to an upper surface of the first gate electrode 210a1. At
least one of the plurality of first gate contact plugs 235a and
236a overlaps the active region ACT. In FIG. 7A, the entire upper
surface of the first gate contact plug 235a on the first extending
portion 207 may overlap the active region ACT. The entire upper
surface of the first gate contact plug 236a on the third extending
portion 209 may overlap the device isolation pattern 102.
[0132] A second gate electrode 210b1, a third gate electrode 210c1
and a fourth gate electrode 210d1 may be disposed over the active
region ACT. The first to fourth gate electrodes 210a1, 210b1, 210c1
and 210d1 may be spaced apart from one another, and may be arranged
two-dimensionally along the row direction and the column direction.
The second gate electrode 210b1 may have a substantially symmetric
structure to the first gate electrode 210a1 with respect to the
first virtual straight line Vb described with reference to FIGS. 5A
and 5B, and the third gate electrode 210c1 may have a substantially
symmetric structure to the first gate electrode 210a1 with respect
to the second virtual straight line Va. The fourth gate electrode
210d1 may have a substantially symmetric structure to the third
gate electrode 210c1 with respect to the first virtual straight
line Vb. A plurality of second gate contact plugs 235b and 236b may
contact an upper surface of the second gate electrode 210b1, and a
plurality of third gate contact plugs 235c and 236c may contact an
upper surface of the third gate electrode 210c1. A plurality of
fourth gate contact plugs 235d and 236d may contact an upper
surface of the fourth gate electrode 210d1. The gate contact plugs
235b, 235c and 235d on the first extending portions of the second,
third and fourth gate electrodes 210b1, 210c1 and 210d1 may overlap
the active region ACT. The gate contact plugs 236b, 236c and 236d
on the third extending portions of the second, third and fourth
gate electrodes 210b1, 210c1 and 210d1 may overlap the device
isolation pattern 102.
[0133] Transistors including the first to fourth gate electrodes
210a1, 210b1, 210c1 and 210d1 disclosed in FIG. 7A may be
implemented in the pair of NMOS sense amplifier drivers or the pair
of PMOS sense amplifier drivers. However, the present invention is
not limited thereto. The transistors of FIG. 7A may be used for
other function and/or purpose.
[0134] FIG. 7B is a plan view illustrating another modified example
of a device according to another embodiment of the inventive
concept.
[0135] Referring to FIG. 7B, at least a portion of a first gate
contact plug 236a on a third extending portion 209 of a first gate
electrode 210a1 may overlap an active region ACT. Due to this, the
width of the active region ACT in a second direction Db can be
increased, so that the amount of turn-on current of the transistor
in a given area may be further increased. In this case, a portion
of the third extending portion 209 overlapping the device isolation
pattern 102 may have an overlapping length in the second direction
Db. The overlapping length may be smaller than a sum of a width of
the first gate contact plug 236a in the second direction Db, and a
horizontal distance in the second direction Db between one end of
the first gate contact plug 236a on the device isolation pattern
102 and one end of the third extending portion 209 overlapping the
device isolation pattern 102.
[0136] Accordingly, FIGS. 7A and 7B illustrate other embodiments
wherein a respective gate electrode 210a1-210d1 also includes a
third extending portion 209 that extends from an end of a
respective second extending portion 208 that is remote from the
respective first vertex V1 and extends along the first direction
Da. The second and third extending portions 208 and 209 define a
respective second vertex V2 therebetween. In some embodiments, as
illustrated for example in FIG. 7B, the third extending portions
209 at least partially overlap the isolation region 102. In other
embodiments, as illustrated for example in FIG. 7A, third extending
portions 209 do not substantially overlap the active region ACT. In
other embodiments, the drain regions and the gate electrodes of a
first pair of the four transistors, such as T1 and T2, are
symmetric with respect to the drain regions and the gate electrodes
of a second pair of the four transistors, such as T3 and T4, about
a portion of the common source region that extends from the center
C along the first direction Da. In other words, they are
symmetrical about the vertical line Va. In other embodiments, the
drain regions and the gate electrodes of a first pair of four
transistors, such as T1 and T3 are symmetric with respect to the
drain regions and the gate electrodes of a second pair of the four
transistors, such as T2 and T4 about a portion of the common source
region that extends from the center C of the active region ACT
along the second direction Db. In other words, the transistors can
be symmetric about the virtual straight line Vb.
[0137] Still other embodiments may add four drain contact plugs
240a-240d, a respective one of which electrically contacts a
respective one of the drain regions in a respective one of the four
quadrants Q1-Q4. The drain contact plugs may also be symmetric
about the first virtual straight line Vb and/or the second virtual
straight line Va. A pair of source contact plugs 241 also may be
added, a first one of which is between the second extending
portions 208 of the gate electrodes of a first pair of four
transistors, such as T1 and T2, and a second one of which is
between the second extending portions 208 of the gate electrodes of
a second pair of the four transistors, such as T3 and T4. The
source contact plugs 241 may also be symmetric about the first
virtual straight line Vb and/or about the second virtual straight
line Va. Moreover, as illustrated in FIGS. 7A and 7B, ends of the
first and third extending portions 207 and 209 may extend beyond
the active region ACT onto the isolation region 102.
[0138] Moreover, four gate contact plugs 235a-235d may be provided,
a respective one of which is electrically connected to a respective
one of the four gate electrodes, a pair of which, such as 235a and
235b, are connected to a respective one of the pair of gate
electrodes adjacent the first vertices V1 thereof, and a second
pair of which, such as 235c and 235d, are connected to a respective
one of the pair of gate electrodes remote from the first vertices
V1 thereof. Four second gate contact plugs 236a-236d may also be
provided, a respective one of which is electrically connected to a
respective one of the four gate electrodes. A pair of the second
gate contact plugs, such as 236c and 236d, are connected to a
respective one of the pair of gate electrodes adjacent the second
vertices V2 thereof, and another pair of which, such as 236a and
236b, are connected to a respective one of a pair of gate
electrodes on the third extensions 209 remote from the second
vertices V2.
[0139] FIG. 7C is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept.
[0140] Referring to FIG. 7C, a first gate electrode 210a2 may
include a first extending portion 207a extending in a first
direction Da and a second extending portion 208a extending in a
second direction Db. At least one of the first or second extending
portions 207a and 208a may include a landing portion 214 or 215 and
a non-landing portion. According to the present modified example,
the first extending portion 207a may include a first landing
portion 214 and a non-landing portion, and the second extending
portion 208a may include a second landing portion 215 and a
non-landing portion. The non-landing portions of the first and
second extending portions 207a and 208a may be connected to each
other to implement a single bent non-landing portion 216.
[0141] The first landing portion 214 may overlap a portion of a
device isolation pattern 102 adjacent to one side of the active
region ACT parallel to the second direction Db and a portion of the
active region ACT. The width of the first landing portion 214 in
the second direction Db may be greater than the width of the
non-landing portion of the first extending portion 207a in the
second direction Db. The portion of the first landing portion 214
overlapping the device isolation pattern 102 may correspond to a
first edge portion 211a of the first gate electrode 210a2
overlapping the device isolation pattern 102. The second landing
portion 215 may overlap another portion of the device isolation
pattern 102 adjacent to one side of the active region ACT parallel
to the first direction Da and another portion of the active region
ACT. The width of the second landing portion 215 in the first
direction Da may be greater than the width of the non-landing
portion of the second extending portion 208a in the first direction
Da. The portion of the second landing portion 215 overlapping the
device isolation pattern 102 may correspond to a second edge
portion 212a of the first gate electrode 210a2 overlapping the
device isolation pattern 102. A pair of first gate contact plugs
235a and 236a may contact the first landing portion 214 and the
second landing portion 215, respectively. As in the foregoing
embodiment 1, the widths of the first landing portion 214 in the
first and second directions Da and Db may be greater than the
widths of the first gate contact plug 235a on the first landing
portion 214 in the first and second directions Da and Db,
respectively. Likewise, the widths of the second landing portion
215 in the first and second directions Da and Db may be greater
than the widths of the first gate contact plug 236a on the second
landing portion 215 in the first and second directions Da and Db,
respectively.
[0142] The first edge portion 211a may have a first length M1a in
the first direction Da. The first length M1a may be smaller than a
sum of a width Wca of the first gate contact plug 235a and a first
horizontal distance 40a. The first horizontal distance 40a may
correspond to a distance in the first direction Da between one end
of the first landing portion 214 and one end of the first gate
contact plug 235a overlapping the device isolation pattern 102.
According to an embodiment, the first length M1a may be smaller
than the width Wca of the first gate contact plug 235a. Similarly
to this, the second edge portion 212a may have a second length M2a
in the second direction Db. The second length M2a may be smaller
than a sum of a width Wcc of the first gate contact plug 236a on
the second landing portion 215 in the second direction Db and a
second horizontal distance 40b. The second horizontal distance 40b
may correspond to a distance in the second direction Db between one
end of the second landing portion 215 and one end of the first gate
contact plug 236a overlapping the device isolation pattern 102.
According to an embodiment, the second length M2a may be smaller
than the width Wcc of the first gate contact plug 236a. The width
Wcc may be equal to a width of the first gate contact plug 235a on
the first landing portion 214 in the second direction Db.
[0143] A second gate electrode 210b2, a third gate electrode 210c2
and a fourth gate electrode 210d2 may be disposed over the active
region ACT. The second gate electrode 210b2 may have a
substantially symmetric structure to the first gate electrode 210a2
with respect to the first virtual straight line Vb described with
reference to FIG. 5A. The third gate electrode 210c2 may have a
substantially symmetric structure to the first gate electrode 210a2
with respect to the second virtual straight line Va described with
reference to FIG. 5A. The fourth gate electrode 210d2 may have a
substantially symmetric structure to the third gate electrode 210c2
with respect to the first virtual straight line Vb. A pair of
second gate contact plugs 235b and 236b may contact the first and
second landing portions of the second gate electrode 210b2,
respectively, and a pair of third gate contact plugs 235c and 236c
may contact the first and second landing portions of the third gate
electrode 210c2, respectively. A pair of fourth gate contact plugs
235d and 236d may contact the first and second landing portions of
the fourth gate electrode 210d2.
[0144] The transistors including the first to fourth gate
electrodes 210a2, 210b2, 210c2 and 210d2 disclosed in FIG. 7C may
be implemented in one pair of NMOS sense amplifier drivers or one
pair of PMOS sense amplifier drivers, as described with reference
to FIGS. 5A, 6A and 6B. However, the present invention is not
limited thereto. The transistors of FIG. 7C may be used for other
function and/or purpose.
[0145] FIG. 7D is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept.
[0146] Referring to FIG. 7D, a first gate electrode 210a3 may
include a first extending portion 207b extending in a first
direction Da and a second extending portion 208b extending in a
second direction Db. At least one of the first or second extending
portions 207b and 208b may include a landing portion and a
non-landing portion. At this time, an entire upper surface of the
landing portion may overlap an active region ACT. According to the
present modified example, the first extending portion 207b may
include a landing portion 214a and a first non-landing portion
216a, and the second extending portion 208b may include a second
non-landing portion 216b. All of the second extending portion 208b
may correspond to the second non-landing portion 216b. The first
non-landing portion 216a may be connected to one side of the
landing portion 214a, and may include a first edge portion 211b
overlapping a portion of the device isolation pattern 102. The
second non-landing portion 216b may be connected to another side of
the landing portion 214a, and may include a second edge portion
212b overlapping another portion of the device isolation pattern
102. Since the first and second edge portions 211b and 212b are
some portions of the first and second non-landing portions 216a,
216b, a length of the first edge portion 211b in the first
direction Da may be smaller than a width of the first gate contact
plug 235a in the first direction. And a length of the second edge
portion 212b in the second direction Db may be smaller than a width
of the first gate contact plug 235a in the second direction Db.
[0147] A second gate electrode 210b3, a third gate electrode 210c3
and a fourth gate electrode 210d3 may be disposed over the active
region ACT. The second gate electrode 210b3 may have a
substantially symmetric structure to the first gate electrode 210a3
with respect to the first virtual straight line Vb described with
reference to FIG. 5A. Some of a landing portion 80 of the third
gate electrode 210c3 may overlap the device isolation pattern 102.
The fourth gate electrode 210d3 may have a substantially symmetric
structure to the third gate electrode 210c3 with respect to the
first virtual straight line Vb.
[0148] According to the present modified example, the landing
portions of the first to fourth gate electrodes 210a3, 210b3, 210c3
and 210d3 may be disposed at arbitrary positions in the first to
fourth gate electrodes 210a3, 210b3, 210c3 and 210d3 according to
layout and/or shape of interconnection lines (not shown) connected
to the gate contact plugs 235a, 235b, 235c and 235d. In some
embodiments, at least some of the landing portions overlap the
active region ACT.
[0149] The transistors including the first to fourth gate
electrodes 210a3, 210b3, 210c3 and 210d3 disclosed in FIG. 7D may
be implemented in one pair of NMOS sense amplifier drivers or one
pair of PMOS sense amplifier drivers, as described with reference
to FIGS. 5A, 6A and 6B. However, the present invention is not
limited thereto. The transistors of FIG. 7D may be used for other
function and/or purpose.
[0150] FIG. 7E is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept.
[0151] Referring to FIG. 7E, an active region ACT may include a
first portion and a second portion. The first portion of the active
region ACT may correspond to a region between first and third gate
electrodes 210a and 210c and between second and fourth gate
electrodes 210b and 210d. The second portion of the active region
ACT may include portions overlapping the first and second gate
electrodes 210a and 210b, portions where first and second drain
regions are formed, and a portion between the first and second gate
electrodes 210a and 210b. According to the present modified
example, a width 60 of the first portion of the active region ACT
in the first direction Da may be smaller than a width 50 of the
second portion of the active region ACT in the first direction
Da.
[0152] Accordingly, FIG. 7E illustrates various embodiments wherein
the active region ACT is recessed between the first extending
portions 207 of the gate electrodes of a first pair of the four
transistors, such as T1 and T3, and between the first extending
portions 207 of the gate electrodes of a second pair of the four
transistors, such as T2 and T4, so that the isolation region 102
protrudes between the first extending portions 207 of the gate
electrodes of the first pair of the four transistors, such as T1
and T3, and between the first extending portions of the electrodes
of the second pair of the four transistors, such as T2 and T4.
Accordingly, the width of the active region is narrower between the
first portions 207 of the gate electrodes, as indicated by 60,
compared to other portions of the active region, as indicated by
50.
[0153] The transistors disclosed in FIG. 7E may be implemented in
one pair of NMOS sense amplifier drivers or one pair of PMOS sense
amplifier drivers, as described with reference to FIGS. 5A, 6A and
6B. However, the present invention is not limited thereto. The
transistors of FIG. 7E may be used for other function and/or
purpose.
Embodiment 3
[0154] FIG. 8A is a plan view of an integrated circuit device
according to still other embodiments of the inventive concept, and
FIG. 8B is a cross-sectional view taken along line V-V' of FIG.
8A.
[0155] Referring to FIGS. 8A and 8B, a device isolation pattern 102
defining an active region ACT is disposed in a substrate 100. The
active region ACT may extend in a first direction Da. First,
second, third and fourth gate electrodes 310a, 310b, 310c and 310d
may be disposed over the active region ACT. The first, second,
third and fourth gate electrodes 310a, 310b, 310c and 310d may be
arranged two-dimensionally along rows and columns. The rows may be
parallel to the first direction Da, and the columns may be parallel
to the second direction Db. A gate dielectric layer 305 may be
disposed between the first, second, third and fourth gate
electrodes 310a, 310b, 310c and 310d and the active region ACT. A
capping dielectric pattern 320 may be disposed on each of the first
to fourth gate electrodes 310a, 310b, 310c and 310d. A gate spacer
319 may be disposed on sidewalls of the first, second, third and
fourth gate electrodes 310a, 310b, 310c and 310d. The gate
dielectric layer 305, the capping dielectric pattern 320 and the
gate spacer 319 may be formed of the same material as the gate
dielectric layer 105, the capping dielectric pattern 120 and the
gate spacer 119, respectively.
[0156] Referring to FIG. 8A, the first gate electrode 310a may
include a first extending portion 331, a second extending portion
332, a third extending portion 333 and a fourth extending portion
334. The first extending portion 331 may extend in the first
direction Da, and the second extending portion 332 may extend in a
second direction Db which is different from the first direction Da.
According to an embodiment, the second direction Db may be
perpendicular to the first direction Da. The third extending
portion 333 may be spaced apart from the first extending portion
331 and may extend in parallel to the first extending portion 331.
The first and third extending portions 331 and 333 may be connected
to both ends of the second extending portion 332 and may have a
shape facing each other. The fourth extending portion 334 may be
spaced apart from the second extending portion 332 and may extend
in parallel to the second extending portion 332. The second and
fourth extending portions 332 and 334 may have a shape facing each
other. The first and third extending portions 331 and 333 may be
connected to both ends of the fourth extending portion 334,
respectively. As disclosed in FIG. 8A, the first gate electrode
310a may have a closed loop shape in plan view. The second gate
electrode 310b may have a substantially symmetric structure to the
first gate electrode 310a in the first direction Da, and the third
gate electrode 310c may have a substantially symmetric structure to
the first gate electrode 310a in the second direction Db. The
fourth gate electrode 310d may have a substantially symmetric
structure to the third gate electrode 310c in the first direction
Da.
[0157] An interlayer dielectric layer 130 may be disposed over an
entire surface of the substrate 100. At least one first gate
contact plug 335a may sequentially penetrate the interlayer
dielectric layer 130 and a capping dielectric pattern 320 to
contact the first gate electrode 310a. At least one of the first
gate contact plugs 335a and 336a may overlap the active region ACT.
According to the present modified example, the gate contact plugs
335a and 336a may be disposed on the first and third extending
portions 331, 333, respectively. An entire upper surface of the
first gate contact plug 335a on the first extending portion 331 may
overlap the active region ACT. Some portion of the first gate
contact plug 336a on the third extending portion 333 may overlap
the active region ACT and the other portion may overlap the device
isolation pattern 102. In this case, the portion of the first gate
contact plug 336a overlapping the device isolation pattern 102 on
the third extending portion 333 has a length Qa in the second
direction Db. The length Qa may be smaller than a sum of a width We
of the first gate contact plug 336a in the second direction Db and
a horizontal distance in the second direction Db between one end of
the first gate contact plug 336a overlapping the device isolation
pattern 102 and one end of the third extending portion 333.
[0158] Similarly to this, at least one second gate contact plugs
335b and 336b may sequentially penetrate the interlayer dielectric
layer 130 and the capping dielectric pattern 320 to contact the
second gate electrode 310b, and at least one third gate contact
plugs 335c, 336c may sequentially penetrate the interlayer
dielectric layer 130 and the capping dielectric pattern 320 to
contact the third gate electrode 310c. At least one fourth gate
contact plugs 335d and 336d may sequentially penetrate the
interlayer dielectric layer 130 and the capping dielectric pattern
320 to contact the second gate electrode 310d.
[0159] As disclosed in FIG. 8A, a first drain region 322a may be
disposed in an active region ACT enclosed by the first gate
electrode 310a having the closed loop shape in plan view. Likewise,
second, third and fourth drain regions 322b, 322c and 322d may be
disposed in some portions of the active region enclosed by the
second, third and fourth gate electrodes 310b, 310c and 310d. A
source region 323 may be disposed in the active region ACT between
the first to fourth gate electrodes 310a, 310b, 310c and 310d in
plan view. First to fourth transistors including the first to
fourth gate electrodes 310a, 310b, 310c and 310d respectively may
share the source region 323.
[0160] A first drain-contact plug 340a, a second drain-contact plug
340b, a third drain-contact plug 340c and a fourth drain-contact
plug 340d may penetrate the interlayer dielectric layer 130 to
contact the first to fourth drain regions 322a, 322b, 322c and
322d, respectively, and source-contact plugs 341 may penetrate the
interlayer dielectric layer 130 to contact the source region 323.
Upper surfaces of the first drain-contact plug 340a and
source-contact plug 341 may have a bar shape extending in parallel
to each other. According to an embodiment, the upper surfaces of
the first drain-contact plug 340a and the source-contact plug 341
may extend in parallel to a longer one of the first or second
extending portions 331 or 332. According to the present modified
example, the second extending portion 332 is longer than the first
extending portion 331, the upper surfaces of the first
drain-contact plug 340a and source-contact plug 341 may extend in
the second direction Db. The plurality of source-contact plugs 341
may be disposed on the source region 323. The plurality of
source-contact plugs 341 may be arranged two-dimensionally along
the first and second directions Da and Db. According to an
embodiment, as shown in the drawing, the source-contact plugs 341
may form one pair of rows. Of the one pair of rows, the first and
second drain-contact plugs 340a and 340b may be disposed between
the source-contact plugs included in the first row, and the third
and fourth drain-contact plugs 340c and 340d may be disposed
between the source-contact plugs 341 included in the second
row.
[0161] Accordingly, FIGS. 8A and 8B illustrate other embodiments
wherein a respective gate electrode 310a-310d also includes a
fourth extending portion 334 that extends from an end of a
respective first extending portion 331 that is remote from the
respective first vertex V1 to an end of the respective third
extending portion 333 that is remote from the respective second
vertex V2, along the second direction Db. A respective gate
electrode including the first through fourth extending portions
define a closed loop gate electrode pattern, a respective one of
which surrounds a respective one of the drain regions 340a-340d.
The drain regions and the gate electrodes may be symmetric with
respect to the first and/or second virtual lines Vb and/or Va.
[0162] First through sixth source contact plugs 341 may also be
provided, a first of which is between the second extending portions
332 of the gate electrodes of a first pair of the four transistors,
such as T1 and T2, and a second of which is between the second
extending portions 332 of the gate electrodes of the second pair of
the four transistors, such as T3 and T4, a third and fourth of
which is adjacent a respective fourth extending portion 334 of the
gate electrodes of the first pair of the four transistors T1 and T2
opposite the respective drain region 340. Finally, a fifth and
sixth of the source contact plugs is adjacent a respective fourth
extending portion 334 of the gate electrodes of the second pair of
the four transistors T3 and T4 opposite the respective drain
regions 340. The drain regions, the gate electrodes and the source
electrodes may be symmetric about the first and/or second virtual
lines Vb and/or Va.
[0163] Four first gate contact plugs 335a, 335b, 336a and 336b may
also be provided, a respective one of which is electrically
connected to a respective midpoint of a respective one of the first
and third extending portions 331 and 333 of the gate electrodes of
a first pair of the four transistors, such as T3 and T4. Two second
gate contact plugs 335c and 335d may also be provided, a respective
one of which is electrically connected to a respective first vertex
V1 of the gate electrodes of a second pair of the four transistors,
such as T1 and T2. Two third gate electrode contact plugs 336c and
336d may also be provided, a respective one of which is
electrically connected at a respective intersection of the
respective third and fourth gate extensions 331 and 334 of the gate
electrodes of the second pair of the four transistors, such as T1
and T2.
[0164] Four transistors disclosed in FIG. 8A may be implemented in
one pair of NMOS sense amplifier drivers or one pair of PMOS sense
amplifier drivers, as described with reference to FIGS. 5A, 6A and
6B. However, the present invention is not limited thereto. The
transistors of FIG. 8A may be used for other function and/or other
purpose.
[0165] Next, various modified examples of the present embodiment
will be described. In the modified examples described below,
non-described elements may the same as those described with
reference to FIGS. 8A and 8B. Therefore, a description will be
given of characteristic portions of the present modified
examples.
[0166] FIG. 9A is a plan view illustrating a modified example of an
integrated circuit device according to other embodiments of the
inventive concept.
[0167] Referring to FIG. 9A, an entire upper surface of a first
gate contact plug 336a on a third extending portion 333 of a first
gate electrode 310a may overlap a device isolation pattern 102. In
this case, in some embodiments, at least some of another first gate
contact plug 335a contacting the first gate electrode 310a overlaps
the active region ACT. Similarly to this, entire upper surfaces of
gate contact plugs 336b, 336c and 336d on third extending portions
of second, third and fourth gate electrodes 310b, 310c and 310d may
overlap the device isolation pattern 102. In this case, other gate
contact plugs 335b, 335c and 335d contacting the second, third and
fourth gate electrodes 310b, 310c and 310d may overlap the active
region ACT.
[0168] According to an embodiment, a source-contact plug 341a
contacting an upper surface of a source region 323 may have the
same extending length as an upper surface of a first drain-contact
plug 340a. In this case, the source-contact plugs 341a which are
greater in number than the source-contact plugs 341 of FIG. 8A may
be disposed. The source-contact plugs 341a may be arranged
two-dimensionally along first and second directions Da and Db.
According to an embodiment, the source-contact plugs 341a may form
first, second and third rows. The first and second drain-contact
plugs 340a and 340b may be disposed between the source-contact
plugs 341a included in the first row, and the third and fourth
drain-contact plugs 340c and 340d may be disposed between the
source-contact plugs 341a included in the third row.
[0169] Four transistors disclosed in FIG. 9A may be implemented in
one pair of NMOS sense amplifier drivers or one pair of PMOS sense
amplifier drivers, as described with reference to FIGS. 5A, 6A and
6B. However, the present invention is not limited thereto. The
transistors of FIG. 9A may be used for other function and/or
purpose.
[0170] FIG. 9B is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept.
[0171] Referring to FIG. 9B, at least one of extending portions
331', 332, 333 and 334 of a first gate electrode 310a' may include
a landing portion 314 and a non-landing portion. A first gate
contact plug 335a may contact the landing portion 314. The landing
portion 314 may have a larger width than the non-landing portion.
According to the present modified example, the first extending
portion 331' of the first gate electrode 310a' may include the
landing portion 314 and the non-landing portion. The landing
portion completely overlaps the active region ACT. Similarly to
this, at least one of extending portions of second, third and
fourth gate electrodes 310b, 310c and 310d may include a landing
portion and a non-landing portion. All of the landing portions of
the second, third and fourth gate electrodes 310b', 310c' and 310d'
may overlap the active region ACT.
[0172] Four transistors disclosed in FIG. 9B may be implemented in
one pair of NMOS sense amplifier drivers or one pair of PMOS sense
amplifier drivers, as described with reference to FIGS. 5A, 6A and
6B. However, the present invention is not limited thereto. The
transistors of FIG. 9B may be used for other function and/or
purpose.
[0173] FIG. 9C is a plan view illustrating another modified example
of an integrated circuit device according to other embodiments of
the inventive concept.
[0174] Referring to FIG. 9C, among extending portions 331, 332,
333' and 334 included in a first gate electrode 310a'', the third
extending portion 333' may include a landing portion 314a and a
non-landing portion. A first gate contact plug 336a may contact the
landing portion 314a. Some portion of the landing portion 314a may
overlap some portion of the active region ACT, and the other
portion of the landing portion 314a may overlap the device
isolation pattern 102. The portion of the landing portion 314a
overlapping the device isolation pattern 102 may have a length Qb
in the second direction. The length Qb may be smaller than a sum of
a width of the first gate contact plug 336a in the second
direction, and a horizontal distance in the second direction Db
between one end of the first gate contact plug 336a overlapping the
device isolation pattern 102 and one end of the landing portion
314a. A second gate electrode 310b'' may have a substantially
symmetric structure to the first gate electrode 310a'' in the first
direction, and the third gate electrode 310c'' may have a
substantially symmetric structure to the first gate electrode
310a'' in the second direction Db. A fourth gate electrode 310d''
may have a substantially symmetric structure to the third gate
electrode 310c'' in the first direction Da.
[0175] Four transistors disclosed in FIG. 9C may be implemented in
one pair of NMOS sense amplifier drivers or one pair of PMOS sense
amplifier drivers, as described with reference to FIGS. 5A, 6A and
6B. However, the present invention is not limited thereto. The
transistors of FIG. 9C may be used for other function and/or
purpose.
[0176] The foregoing embodiments 1, 2 and 3 may be combined. For
example, an integrated circuit device according to an embodiment of
the inventive concept may include combinations of the transistors
disclosed in the foregoing embodiments 1, 2 and 3.
[0177] The integrated circuit devices according to the foregoing
embodiments may be mounted in various types of packages. Examples
of the packages of the integrated circuit devices according to the
embodiments of the inventive concept may include package on package
(PoP), ball grid arrays (BGAs), chip scale packages (CSPs), a
plastic leaded chip carrier (PLCC), a plastic dual in-line package
(PDIP), a die in waffle pack, a die in wafer form, a chip on board
(COB), a ceramic dual in-line package (CERDIP), a plastic metric
quad flat pack (MQFP), a thin quad flat pack (TQFP), a small
outline package (SOP), a shrink small outline package (SSOP), a
thin small outline package (TSOP), a thin quad flat package (TQFP),
a system in package (SIP), a multi chip package (MCP), a
wafer-level fabricated package (WFP), a wafer-level processed
package (WSP) and so on. The packages equipped with the integrated
circuit devices according to the embodiments of the inventive
concept may further include a controller for controlling the
integrated circuit device, and/or a logic device.
[0178] According to the embodiments of the inventive concept, at
least some of the gate contact plug may overlap the active region.
Due to this, the width (e.g., width of the active region
corresponding to the channel width) of the active region within a
given area may be increased to thus increase the amount of turn-on
current of the field effect transistor. As a result, high
integration and/or superior reliability may be realized.
[0179] Many different embodiments have been disclosed herein, in
connection with the above description and the drawings. It will be
understood that it would be unduly repetitious and obfuscating to
literally describe and illustrate every combination and
subcombination of these embodiments. Accordingly, the present
specification, including the drawings, shall be construed to
constitute a complete written description of all combinations and
subcombinations of the embodiments described herein, and of the
manner and process of making and using them, and shall support
claims to any such combination or subcombination.
[0180] In the drawings and specification, there have been disclosed
embodiments of the invention and, although specific terms are
employed, they are used in a generic and descriptive sense only and
not for purposes of limitation, the scope of the invention being
set forth in the following claims.
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