U.S. patent application number 13/558772 was filed with the patent office on 2012-11-22 for microsystem.
Invention is credited to Ando Feyh, Axel Franke, Christian RETTIG.
Application Number | 20120291543 13/558772 |
Document ID | / |
Family ID | 43571013 |
Filed Date | 2012-11-22 |
United States Patent
Application |
20120291543 |
Kind Code |
A1 |
RETTIG; Christian ; et
al. |
November 22, 2012 |
MICROSYSTEM
Abstract
A microsystem, e.g., a micromechanical sensor, has a first
cavity which is sealed off from the surroundings and a second
cavity which is sealed off from the surroundings. The first cavity
is bounded by a first bond joint and the second cavity is bounded
by a second bond joint. Either the first bond joint or the second
bond joint is a eutectic bond joint or a diffusion-soldered
joint.
Inventors: |
RETTIG; Christian; (Eningen
U.A., DE) ; Franke; Axel; (Ditzingen, DE) ;
Feyh; Ando; (Tamm, DE) |
Family ID: |
43571013 |
Appl. No.: |
13/558772 |
Filed: |
July 26, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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12806135 |
Aug 6, 2010 |
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13558772 |
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Current U.S.
Class: |
73/488 ;
428/34.1 |
Current CPC
Class: |
Y10T 29/49146 20150115;
B81C 2203/0109 20130101; Y10T 428/13 20150115; Y10T 29/49144
20150115; B81B 7/02 20130101; G01C 19/56 20130101; B81B 7/0041
20130101; G01P 15/0802 20130101 |
Class at
Publication: |
73/488 ;
428/34.1 |
International
Class: |
B81B 3/00 20060101
B81B003/00; G01P 15/00 20060101 G01P015/00 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 3, 2009 |
DE |
10 2009 029 180.6 |
Claims
1. A microsystem, comprising: a first cavity sealed off from the
surroundings, wherein the first cavity is bounded by a first bond
joint; and a second cavity sealed off from the surroundings,
wherein the second cavity is bounded by a second bond joint;
wherein one of the first bond joint or the second bond joint is one
of a eutectic bond joint or a diffusion-soldered joint.
2. The microsystem as recited in claim 1, wherein a first pressure
exists in the first cavity and a second pressure exists in the
second cavity, the magnitude of the first pressure being different
from the magnitude of the second pressure.
3. The microsystem as recited in claim 2, wherein the first bond
joint includes aluminum and gold, and wherein the second bond joint
includes aluminum and silicon.
4. The microsystem as recited in claim 2, wherein the first bond
joint includes copper, and wherein the second bond joint includes
copper and tin.
5. The microsystem as recited in claim 2, wherein a first sensor
structure is disposed in the first cavity, and wherein a second
sensor structure is disposed in the second cavity.
6-10. (canceled)
Description
RELATED APPLICATION INFORMATION
[0001] This application is a divisional application of U.S. patent
application Ser. No. 12/806,135 filed Aug. 6, 2010, which claims
the benefit of and priority of German Patent Application No. 10
2009 029 180.6, which was filed in Germany on Sep. 3, 2009, the
entire contents of all of which are expressly incorporated herein
by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a microsystem, e.g.,
micromechanical sensor structure, and to a method for the
production of such a microsystem.
[0004] 2. Description of the Related Art
[0005] Micromechanical sensor structures are known from the related
art. Micromechanical rotation rate sensors for determining rates of
rotation about one or more axes are used, for example, in the
automotive sector and in entertainment electronics for navigation,
image stabilization and detection of movement. Such rotation rate
sensors have a movable micromechanical element enclosed in a
cavity. To obtain low damping and thus a high mechanical Q factor,
the micromechanical element is typically enclosed at a very low gas
pressure, for example at from 1 to 5 mbar. Micromechanical
acceleration sensors serve to determine accelerations in one or
more directions in space and are used, for example, for electronic
stabilization programs, for airbag release and for attitude
detection. Such acceleration sensors also have a movable
micromechanical element enclosed in a cavity. To obtain a critical
damping and thus a rapid settling of the movable element, the
micromechanical element is typically enclosed in a cavity with a
relatively high as pressure, for example of around 800 mbar. It is
also known for a plurality of rotation rate sensors and
acceleration sensors to be combined in an inertial navigation
system which makes it possible to track position and orientation by
time integration of the individual signals.
[0006] The enclosure of the micromechanical elements in the
cavities is done by wafer-level encapsulation, for example by seal
glass bonding or eutectic bonding. In that procedure, the pressure
used during bonding is enclosed in the interior of the cavity. If a
plurality of chips is implemented on one chip, all of the encasing
cavities have the same internal pressure. When seal glass bonding
is employed, the bond pressure is increased in addition by solvent
evaporation from the seal glass.
BRIEF SUMMARY OF THE INVENTION
[0007] An object of the present invention is to provide a
microsystem having a first cavity and a second cavity which are
sealed by different bond joints. It is a further object of the
invention to provide a method for the production of such a
microsystem.
[0008] A microsystem according to the present invention has a first
cavity which is sealed off from the surroundings and a second
cavity which is sealed off from the surroundings. The first cavity
is bounded by a first bond joint and the second cavity is bounded
by a second bond joint, wherein either the first bond joint or the
second bond joint is a eutectic bond joint or a diffusion-soldered
joint. Advantageously, different internal pressures may be obtained
in the cavities of that microsystem. That allows different
micromechanical sensors to be integrated on one chip. In that
manner it is possible to obtain more highly integrated
micromechanical sensor systems, which are cheaper and take up less
space.
[0009] Preferably, in the first cavity there is a first pressure
and in the second cavity there is a second pressure, wherein the
first pressure and the second pressure are of different magnitudes.
Advantageously, it is possible to arrange different sensors in the
cavities, with the optimum internal pressure for operation of the
respective sensor being provided for in each cavity.
[0010] In one embodiment, the first bond joint has aluminum and
gold, and the second bond joint has aluminum and silicon.
Advantageously, the first bond joint may then be closed by
thermocompression bonding at a low temperature and the second bond
joint may be closed by eutectic bonding at a higher temperature. In
an alternative embodiment, the first bond joint has copper and the
second bond joint has copper and tin. Those two bond joints also
may advantageously be closed at differing temperatures and
pressures.
[0011] Preferably, a first sensor structure is disposed in the
first cavity and a second sensor structure is disposed in the
second cavity. In that manner, it is advantageously possible to
obtain highly integrated sensor components having a number of
functions.
[0012] In a method according to the present invention for the
production of a microsystem, a substrate and a capping wafer are
joined to each other by bonding. In a first method step, the
substrate and the capping wafer are joined to each other in a first
region by a first bonding process at a first temperature and at a
first ambient pressure, and in a further method step are joined to
each other in a second region by a second bonding process at a
second temperature and at a second ambient pressure, wherein either
the first bonding process or the second bonding process is a
eutectic bonding process or a diffusion-soldering process. That
method advantageously allows the first ambient pressure and the
second ambient pressure to be selected such that they differ.
[0013] In an example implementation of the method, method steps are
additionally carried out beforehand to provide the substrate with a
first surface, on which a first bonding frame and a second bonding
frame are disposed, to provide the capping wafer with a second
surface, on which a first further bonding frame and a second
further bonding frame are disposed, wherein the second bonding
frame and/or the second further bonding frame are/is interrupted by
at least one opening, and for arranging the substrate and the
capping wafer in such a manner that the first surface faces the
second surface and the first bonding frame comes into contact with
the first further bonding frame and the second bonding frame comes
into contact with the second further bonding frame. The at least
one opening in the second bonding frame or in the second further
bonding frame advantageously allows the pressure in the second
region to be adapted to the second ambient pressure before the
capping wafer and the substrate are joined to each other in the
second region by the eutectic bonding process or the
diffusion-soldering process.
[0014] The second bonding frame and/or the second further bonding
frame advantageously melt(s) briefly during the eutectic bonding or
the diffusion-soldering, thereby closing the at least one opening
in the second bonding frame and/or in the second further bonding
frame. Advantageously, the second ambient pressure is then enclosed
in the region that has been sealed off by the eutectic bonding
process.
[0015] The first temperature is advantageously lower than the
second temperature. That advantageously ensures that the bond
joints may be produced one after the other.
[0016] Preferably, the first bonding frame has aluminum, the second
bonding frame silicon, and the first and second further bonding
frames have gold. In that case, the first temperature is above
300.degree. C. and below 363.degree. C. and the second temperature
is 363.degree. C. or above.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] FIG. 1 is a plan view of a substrate.
[0018] FIG. 2 is a plan view of a capping wafer.
[0019] FIG. 3 shows a section through a microsystem at a first
processing stage.
[0020] FIG. 4 shows a section through the microsystem at a second
processing stage.
[0021] FIG. 5 shows a section through the microsystem at a third
processing stage.
DETAILED DESCRIPTION OF THE INVENTION
[0022] FIG. 1 is a plan view of a substrate 110 shown
schematically. Substrate 110 may, for example, be a silicon
substrate. Substrate 110 may be a complete wafer or part of a
wafer. Disposed on substrate 110 are a first sensor structure 200
and a second sensor structure 300. Sensor structures 200, 300 may
be micromechanical sensor structures, for example rotation rate
sensors or acceleration sensors. For example, first sensor
structure 200 may be a rotation rate sensor and second sensor
structure 300 may be an acceleration sensor.
[0023] First sensor structure 200 is bounded by a first lower
bonding frame 220 disposed on the surface of substrate 110. In the
example of FIG. 1, first lower bonding frame 220 has the shape of
an approximately square frame. First lower bonding frame 220 may,
however, also have the shape of a circular ring or any other closed
shape surrounding first sensor structure 200. First lower bonding
frame 220 may, for example, consist of aluminum deposited on the
surface of substrate 110. The height of first lower bonding frame
220 perpendicular to the surface of substrate 110 may in that case
be, for example, from 1/2 .mu.m to 10 .mu.m. The width of first
lower bonding frame 220 parallel to the surface of substrate 110
may, for example, be from 10 .mu.m to 500 .mu.m, preferably 100
.mu.m in size.
[0024] Second sensor structure 300 is bounded all round by a second
lower bonding frame 320. Second lower bonding frame 320 has four
openings 325 at which second lower bonding frame 320 is
interrupted. It is also possible for fewer or more than four
openings 325 to be provided, but at least one opening 325 is
provided. In the example illustrated, second lower bonding frame
320 also has the shape of an approximately square frame. As with
the shape of first lower bonding frame 220, however, a different
shape may be selected for second lower bonding frame 320. The
dimensions of second lower bonding frame 320 approximately
correspond to those of first lower bonding frame 220. Second lower
bonding frame 320 may, for example, consist of silicon.
[0025] FIG. 2 is a plan view of a capping wafer 120 shown
schematically. Capping wafer 120 serves to encapsulate sensor
structures 200, 300 disposed on substrate 110. Capping wafer 120
may consist, for example, of silicon or glass. Capping wafer 120
may be a complete wafer or part of a wafer. Disposed on the surface
of capping wafer 120 are a first upper bonding frame 230 and a
second upper bonding frame 330. The position and size of first
upper bonding frame 230 and second upper bonding frame 330 are so
selected that first upper bonding frame 230 may be brought into
registration with first lower bonding frame 220 on substrate 110
and second upper bonding frame 330 may be brought into registration
with second lower bonding frame 320 on substrate 110. First upper
bonding frame 230 and second upper bonding frame 330 may, for
example, consist of gold deposited on capping wafer 120. Like
second lower bonding frame 320, second upper bonding frame 330 may
have openings at which second upper bonding frame 330 is
interrupted. If second upper bonding frame 330 has such openings,
openings 325 in second lower bonding frame 320 may optionally be
omitted.
[0026] Substrate 110 and capping wafer 120 may be joined to each
other to enclose or encapsulate first sensor structure 200 and
second sensor structure 300. For this, first lower bonding frame
220 has to be joined to first upper bonding frame 230 and second
lower bonding frame 320 has to be joined to second upper bonding
frame 330. In so doing, first sensor structure 200 is enclosed in a
first cavity 210 and second sensor structure 300 is enclosed in a
second cavity 310. If first sensor structure 200 and second sensor
structure 300 make different demands on the ambient pressure,
different internal pressures have to be enclosed in first cavity
210 and in second cavity 310. FIGS. 3 to 5 show different
processing steps for the production of such a joint between
substrate 110 and capping wafer 120.
[0027] FIG. 3 shows in a sectional view that the surface of
substrate 110 exhibiting lower bonding frames 220, 320 and the
surface of capping wafer 120 exhibiting upper bonding frames 230,
330 are first arranged facing each other in such a manner that
first lower bonding frame 220 is opposite first upper bonding frame
230 and second lower bonding frame 320 is opposite second upper
bonding frame 330. Substrate 110 and capping wafer 120 are then
brought into contact with each other at a first pressure in a
bonding system. Depending on the pressure obtainable in the bonding
system, first pressure 215 may, for example, be from 10.sup.-3 mbar
to over 1000 mbar.
[0028] There then follows a first phase of the bonding process,
which is illustrated schematically in FIG. 4. The ambient
temperature in the bonding system is increased to a first
temperature, at which first lower bonding frame 220 and first upper
bonding frame 230 are joined to each other by thermocompression
bonding. The first temperature is typically above 300.degree. C.
and less than 363.degree. C. Preferably, the first temperature is
approximately 350.degree. C. While first lower bonding frame 220
and first upper bonding frame 230 are being joined to each other by
thermocompression bonding, a first bond joint 240 is produced which
encloses a first cavity 210 surrounding first sensor structure 200.
In that operation, first pressure 215 is enclosed in first cavity
210. First cavity 210 is enclosed, therefore, by substrate 110,
capping wafer 120 and first bond joint 240 and is so leak-tight
that first pressure 215 in first cavity 210 is maintained.
[0029] Second lower bonding frame 320 and second upper bonding
frame 330 are also in contact with each other, but have not yet
been joined to each other. By virtue of openings 325 in second
lower bonding frame 320 and/or in second upper bonding frame 330,
it is possible for pressure equalization to take place between the
region surrounding second sensor structure 300 and the ambient
environment of substrate 110 and capping wafer 120. Thereafter, the
ambient pressure in the bonding system is changed to a second
pressure 315. Second pressure 315 may be higher or lower than first
pressure 215 and similarly, depending on the capabilities of the
bonding system, may be from 10.sup.-3 mbar to over 1000 mbar. Via
openings 325, second pressure 315 is also established in the
ambient environment of second sensor structure 300. The temperature
in the bonding system is then increased to a second temperature,
which is preferably equal to or greater than 363.degree. C. First
bond joint 240 is not adversely affected by the increase in
temperature to produce second bond joint 340. At a temperature of
363.degree. C., a eutectic bonding process occurs between second
lower bonding frame 320 and second upper bonding frame 330. In that
process, the silicon of second lower bonding frame 320 and the gold
of second upper bonding frame 330 are joined to each other and
briefly melt, thereby producing second bond joint 340.
[0030] During the melting process, openings 325 in second lower
bonding frame 320 and/or in second upper bonding frame 330 are
closed. That produces in the area surrounding second sensor
structure 300 a second cavity 310 which is bounded by substrate
110, capping wafer 120 and second bond joint 340 and in which
second pressure 315 is enclosed. Second cavity 310 also is so
leak-tight that second pressure 315 is retained. FIG. 5 shows the
completed microsystem 100 in schematic section.
[0031] Instead of using the above-mentioned material systems for
lower bonding frames 220, 320 and upper bonding frames 230, 330,
other bonding materials may also be used. It is important merely
that first bond joint 240 is produced at a lower temperature than
second bond joint 340 and that second bond joint 340 is a eutectic
bond or another bond during the production of which a brief
liquefaction of the bonding materials occurs which results in
openings 325 being fused closed. As an alternative material system,
first lower bonding frame 220 and first upper bonding frame 230
may, for example, both have copper, and second lower bonding frame
320 and second upper bonding frame 330 may have copper and tin. In
that case, the second bond joint is formed from tin and copper by
what is called a solid-liquid interdiffusion (SLID) bonding
process. That process is also referred to as diffusion soldering.
In that case also, a brief liquefaction of the bonding materials
occurs.
* * * * *