U.S. patent application number 12/907615 was filed with the patent office on 2011-03-31 for wafer level hermetically sealed mems device.
This patent application is currently assigned to Medtronic, Inc.. Invention is credited to Cornel Marxer, Rogier Receveur.
Application Number | 20110072646 12/907615 |
Document ID | / |
Family ID | 36643421 |
Filed Date | 2011-03-31 |
United States Patent
Application |
20110072646 |
Kind Code |
A1 |
Receveur; Rogier ; et
al. |
March 31, 2011 |
WAFER LEVEL HERMETICALLY SEALED MEMS DEVICE
Abstract
A hermetically sealed microelectromechanical system (MEMS)
package includes a MEMS switch having a movable portion and a
stationary portion with an electrical contact thereon. A glass lid
is anodically bonded to the MEMS switch to form a sealed cavity
over the movable portion of the MEMS switch. The glass lid includes
a contact aperture to allow access to the electrical contact on the
stationary portion of the MEMS switch. A family of body-implantable
hermetically-sealed MEMS packages are provided according to certain
aspects and embodiments of the present invention.
Inventors: |
Receveur; Rogier;
(Maastricht, NL) ; Marxer; Cornel; (Neucahtel,
CH) |
Assignee: |
Medtronic, Inc.
Minneapolis
MN
|
Family ID: |
36643421 |
Appl. No.: |
12/907615 |
Filed: |
October 19, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11066820 |
Feb 25, 2005 |
7816745 |
|
|
12907615 |
|
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Current U.S.
Class: |
29/622 |
Current CPC
Class: |
B81B 7/007 20130101;
B81C 1/0023 20130101; B81C 2203/0109 20130101; Y10T 29/49105
20150115 |
Class at
Publication: |
29/622 |
International
Class: |
H01H 11/00 20060101
H01H011/00 |
Claims
1. A method of forming a MEMS package comprising: fabricating a
MEMS switching device having a movable portion and a stationary
portion; forming switch metallization on at least the movable
portion of the MEMS switching device and contact metallization on
the stationary portion of the MEMS switching device; and anodically
bonding a glass lid to the MEMS switching device to form a sealed
cavity over the movable portion of the MEMS switching device, the
glass lid including a contact aperture to allow access to the
contact metallization on the stationary portion of the MEMS
switching device.
2. A method according to claim 1, wherein forming switch
metallization and contact metallization comprises: attaching a
masking structure to the MEMS switching device, the masking
structure having a plurality of through holes; depositing the
contact metallization and the switch metallization through the
through holes on the MEMS switching device; and detaching the
masking structure from the MEMS switching device.
3. A method according to claim 2, wherein the masking structure
includes a silicon shadow mask.
4. A method according to claim 2, wherein the through holes
includes potassium-hydroxide etched in the silicon shadow mask.
5. A method according to claim 2, wherein the masking structure
includes wax for attachment and is detached from the MEMS switching
device by heating the wax.
6. A method according to claim 1, wherein anodically bonding the
glass lid to the MEMS switching device is performed at an anodic
bonding voltage that is less than 100 Volts greater than an
actuation voltage of the MEMS switching device.
7. A method according to claim 13, wherein the actuation voltage of
the MEMS switching device is about 150 Volts and the anodic bonding
voltage is about 230 Volts.
8. A method according to claim 1, wherein anodically bonding the
glass lid to the MEMS switching device is performed at an anodic
bonding temperature that does not affect electrical contacting
qualities of the contact metallization and the switch
metallization.
9. A method according to claim 8, wherein the contact metallization
and the switch metallization is composed of titanium-ruthenium.
10. A method according to claim 7, wherein the anodic bonding
temperature is about 365.degree. C.
11. A method according to claim 1, wherein the glass lid is
composed of a material having a thermal coefficient of expansion
(TCE) that is similar to a TCE of the MEMS switching device.
12. A method according to claim 10, wherein the glass lid includes
Pyrex.
13. A method of forming a MEMS package comprising: fabricating a
MEMS switching device having a movable portion and a stationary
portion; forming switch metallization on at least the movable
portion of the MEMS switching device and contact metallization on
the stationary portion of the MEMS switching device; and anodically
bonding a glass lid to the MEMS switching device to form a sealed
cavity over the movable portion of the MEMS switching device, the
glass lid including a contact aperture to allow access to the
contact metallization on the stationary portion of the MEMS
switching device, wherein forming switch metallization and contact
metallization comprises: attaching a masking structure to the MEMS
switching device, the masking structure having a plurality of
through holes; depositing the contact metallization and the switch
metallization through the through holes on the MEMS switching
device; and detaching the masking structure from the MEMS switching
device.
14. A method of forming a MEMS package comprising: fabricating a
MEMS switching device having a movable portion and a stationary
portion; forming switch metallization on at least the movable
portion of the MEMS switching device and contact metallization on
the stationary portion of the MEMS switching device; and anodically
bonding a glass lid to the MEMS switching device to form a sealed
cavity over the movable portion of the MEMS switching device, the
glass lid including a contact aperture aligned directly over the
electrical contact to allow access to the contact metallization on
the stationary portion of the MEMS switching device.
15. A method of forming a MEMS package comprising: fabricating a
MEMS switching device having a movable portion and a stationary
portion; depositing selectively switch metallization on at least
the movable portion of the MEMS switching device and contact
metallization on the stationary portion of the MEMS switching
device; and anodically bonding a glass lid to the MEMS switching
device to form a sealed cavity over the movable portion of the MEMS
switching device, the glass lid including a contact aperture
aligned directly over the electrical contact to allow access to the
contact metallization on the stationary portion of the MEMS
switching device.
Description
RELATED APPLICATION
[0001] This application is a divisional of U.S. patent application
Ser. No. 11/066,820, filed Feb. 25, 2010 entitled "WAFER LEVEL
HERMETICALLY SEALED MEMS DEVICE", herein incorporated by reference
in its entirety.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to hermetic sealing of an
implantable medical device, and particularly to a wafer level
hermetic seal for an implantable medical device that employs a
microelectromechanical system (MEMS).
[0003] Implantable medical devices (IMDs) employ internal
electronic circuitry that is hermetically sealed in a biostable
package. This internal electronic circuitry is typically
implemented as one or more integrated circuits (ICs). More
recently, the prospect of implementing switching circuitry as a
MEMS system has been considered, as discussed in U.S. application
Ser. No. 10/973,117 filed Oct. 26, 2004 for "MEMS Switching Circuit
and Method for an Implantable Medical Device" by R. Receveur et
al., which is hereby incorporated by reference. However, a MEMS is
more difficult to employ in an implantable medical device than a
system that employs only ICs, at least in part because of the more
stringent packaging requirements to provide a particular
environment around the MEMS. In addition, a MEMS package may need
to redistribute electrical signals, provide mechanical support,
handle power and provide thermal management functions. These
considerations present challenges in designing an effective and
efficiently manufacturable sealed MEMS package for an IMD.
[0004] Accordingly, there is a need in the art for an improved
packaging solution for MEMS devices employed in implantable medical
devices.
BRIEF SUMMARY OF THE INVENTION
[0005] The present invention provides a hermetically sealed MEMS
package and a method of forming that package. The MEMS package
includes a MEMS switch having a movable portion and a stationary
portion with an electrical contact thereon. A glass lid is
anodically bonded to the MEMS switch to form a sealed cavity over
the movable portion of the MEMS switch. The glass lid includes a
contact aperture to allow access to the electrical contact on the
stationary portion of the MEMS switch.
BRIEF DESCRIPTION OF THE DRAWINGS
[0006] FIG. 1 is a cross-sectional view of a MEMS package according
to an embodiment of the present invention.
[0007] FIG. 2 is a cross-sectional view of an intermediate
fabrication condition of the MEMS package of FIG. 1, shown after a
temporary shadow mask has been removed for selective deposition of
contact metallization and switch metallization layers.
[0008] FIG. 3 is a perspective view of a hermetically sealed MEMS
package according to an embodiment of the present invention.
[0009] FIG. 4A-C depict elevational side views in cross-section of
the packages depicted in FIG. 1 and FIG. 2 and including 15
annotated processing steps to be performed according to the present
invention.
[0010] FIG. 5A-C are flowcharts that include processing steps to be
performed according to the present invention.
DETAILED DESCRIPTION
[0011] FIG. 1 is a cross-sectional view of MEMS packaging 10
according to an exemplary embodiment of the present invention. MEMS
packaging 10 includes silicon-on-insulator (SOI) carrier layer 12,
silicon dioxide features 14, SOI device layer 16 patterned as a
MEMS switch (also referred to herein as MEMS switch 16) and having
movable parts 18 and stationary part 20, MEMS switch metallization
layers 22 and 23, contact metallization 24, and glass lid 26 having
contact aperture 28 for allowing electrical connection to contact
metallization 24. Glass lid 26 forms sealed interior cavity 30
around movable parts 18 of MEMS switch 16.
[0012] MEMS switch 16 is illustrated schematically in FIG. 1 to
include movable parts 18 and stationary part 20. Generally
speaking, MEMS switch 16 is closed and opened by switch
metallization layers 22 and 23 being forced into and out of contact
with one another by electro-mechanical operation of movable parts
18 of MEMS switch 16. Contact metallization 24 is provided on a top
surface of stationary part 20 to receive electrical control signals
for operating MEMS switch 16, and also to receive the electrical
signals that are to be transmitted or blocked by MEMS switch 16,
such as a pulse generated by an implantable pulse generator in one
particular embodiment. For example, MEMS switch 16 may be
implemented as an electrostatic comb actuator, having a movable
actuator member and fixed actuator members that are attracted to
one another by application of an actuation voltage to contact
metallization 24, resulting in movement of movable parts 18 to
selectively open and close MEMS switch 16. A more thorough
description of the configuration and operation of a MEMS switch
that would be suitable for implementation as MEMS switch 16 is
found in U.S. application Ser. No. 10/973,117 filed Oct. 26, 2004
for "MEMS Switching Circuit and Method for an Implantable Medical
Device" by R. Receveur et al., which has been incorporated herein
by reference.
[0013] MEMS switch 16 is housed in cavity 30 that includes a
controlled, preserved interior atmosphere where movable parts 18
are free to move. This atmosphere is provided by glass lid 26,
which forms hermetically sealed cavity 30 around MEMS switch 16.
Glass lid 26 has standoff portions 32 around movable parts 18 of
MEMS switch 16 and a recessed area above movable parts 18 of MEMS
switch 16, so that free movement within the resulting cavity 30
inside of glass lid 26 is possible. In addition, glass lid 26 is
formed with contact aperture 28, which allows electrical
contact-to-contact metallization 24 on stationary part 20 of MEMS
switch 16.
[0014] In one embodiment, glass lid 26 is secured to the silicon
structure of MEMS switch 16 by anodic (i.e., electrostatic)
bonding. A covalent bond is formed between the surface atoms of
glass lid 26 and the silicon of MEMS switch 16 when both structures
are pressed together under application of a voltage at an elevated
temperature, creating a hermetic seal between the structures. In a
typical embodiment, glass lid 26 is composed of a material that has
a thermal coefficient of expansion (TCE) similar to that of
silicon, such as Pyrex or a similar material. The silicon material
of MEMS switch 16 may be composed of a fine grain polysilicon
layer, a silicon-on-insulator (SOI) layer, or another
semiconductive material known in the art.
[0015] An example of an anodic bonding process for securing glass
lid 26 to the silicon material of MEMS switch 16 is performed at a
temperature in the range of 300-450.degree. C. at a voltage in the
range of 200-2000 Volts. The bond width is typically at least 250
micro-meters (.mu.m), and the processing time is typically about
10-20 minutes. A bond strength of greater than 20 mega-Pascals
(Mpa) can be achieved by anodically bonding glass lid 26 to the
silicon material of MEMS switch 16, which provides an excellent
hermetic seal suitable for use in an implantable medical
device.
[0016] An example of a process of fabricating MEMS packaging 10
will now be described. MEMS switch 16 is fabricated on SOI layer
12, supported by silicon dioxide features 14, in a manner generally
known in the art. After MEMS switch 16 has been formed, a shadow
mask technique is used to selectively deposit contact metallization
layer 24 and switch metallization layers 22 and 23 while keeping
the areas where glass lid 26 is to contact MEMS switch 16 clean,
for subsequent anodic bonding. To form the shadow mask, a silicon
wafer is etched (such as by potassium hydroxide (KOH) etching) with
through holes for formation of metallization regions. The silicon
wafer is temporarily attached to portions of the SOI layer forming
MEMS switch 16, such as by wax, and is aligned so that the through
holes are located in the areas where contact metallization layer 24
and switch metallization layers 22 and 23 are to be formed. Next, a
metal deposition step is performed, with a metallization material
such as Titanium-Ruthenium (where Titanium is the adhesion layer
for the Ruthenium) being deposited through the through holes of the
silicon wafer to form contact metallization layer 24 and switch
metallization layers 22 and 23. Finally, the silicon wafer that
forms the shadow mask is detached from MEMS switch 16, such as by
heating the wax that attaches the two structures, leaving contact
metallization layer 24 and switch metallization layers 22 and 23
formed on MEMS switch 16. This stage of the process is illustrated
in FIG. 2. which is a cross-sectional view of MEMS packaging 10
after the metallization layers have been deposited and the
temporary shadow mask has been removed.
[0017] Next, glass lid 26 is pre-etched and aligned in the proper
position with respect to MEMS switch 16, for anodic bonding. In an
example of the process, glass lid 26 is pressed toward MEMS switch
16 with 250 kilo-grams (kg) of pressure, at a temperature of
365.degree. C. and with application of a voltage of 230 V. In
consideration of these parameters, MEMS switch 16 is designed to
have an actuation voltage (that is, the voltage applied in order to
close the switch) that is not significantly lower than the anodic
bonding voltage (which is 230 V in this example). For example, the
actuation voltage may be within 100 V of the anodic bonding
voltage. One way to achieve this relatively high actuation voltage
is to design the number of comb fingers and the size of the springs
of MEMS switch 16 in such a manner that MEMS switch 16 has a
stiffness that requires a relatively high voltage (such as about
150 V, for example) to actuate. This design is different than many
typical existing MEMS switch designs, which are actuated by a
voltage in the range of 10-20 V. In addition, MEMS switch 16 (and
specifically contact metallization layer 24 and switch
metallization layer 22 and 23) is designed so that the anodic
bonding temperature (in this example, 365.degree. C.) does not have
a negative effect on the metallization. For example,
Titanium-Ruthenium metallization layers may be used, as this
material remains a good electrical contact material with low
electrical resistance at high temperatures such as a 365.degree. C.
anodic bonding temperature.
[0018] In a typical process, a plurality of MEMS switches 16 and
glass lids 26 are formed simultaneously on a wafer. Thus, once each
glass lid 26 is bonded to each MEMS switch 16, the wafer is diced
into individual hermetically sealed switches. As a result, it is
relatively simple to manufacture high quantities of hermetically
sealed MEMS packaging 10.
[0019] FIG. 3 is a perspective view of hermetically sealed MEMS
packaging 10 according to an embodiment of the present invention.
FIG. 3 shows the configuration of contact apertures 28 in glass lid
26 that allow electrical connection to be made to contact
metallization 24 of the MEMS switch sealed inside the package. The
ability of this design to contact the MEMS switch through the top
of glass lid 26 has a number of advantages. First, this contact
scheme has minimal effect on the mechanical stability and
hermeticity of the packaging structure, ensuring that the MEMS
switch is able to freely move when actuated. Second, this design
allows multiple glass lids 26 on a wafer to be diced
simultaneously, after bonding to a respective MEMS switch. MEMS
packaging 10 is therefore efficient to reliably manufacture.
[0020] Hermetically sealed MEMS packaging 10, fabricated in the
manner described in the examples above, was tested to confirm that
the bond strength and hermeticity was acceptable for use in an
implantable medical device. Using MIL-STD-883 standard test
methods, a shear strength of 114 Newtons .+-.26 Newtons and a
Helium leak rate of better than 2.times.10.sup.-8 cubic centimeters
per second were measured in 31 of 37 samples tested. 16 of the 31
samples were then subjected to thermal stress tests (thermal
cycling), and 14 samples survived. The other 15 samples were
subjected to mechanical stress tests (shock and vibration), and 13
samples survived. Thus, MEMS packaging samples were obtained that
provide excellent bond strength, hermeticity, thermal stress
resistance and mechanical stress resistance, at a rate of greater
than 70% yield. These results confirm that MEMS packaging 10 is
acceptable for use in implantable medical devices. It is expected
that further refinement of the quality of the process and material
conditions employed could result in further improvement of the
yield rate as well.
[0021] FIG. 4A-C depict elevational side views in cross-section of
the packages depicted in FIG. 1 and FIG. 2 and FIG. 5A-C are flow
charts including 15 annotated processing steps to be performed
according to the present invention. The three views in FIG. 4A-C
depict processing of the package according to the invention at
discrete moments during fabrication. Processing steps shown in FIG.
5A correspond to the processing of the package as depicted in FIG.
4A. Processing steps shown in FIG. 5B correspond to the processing
of the package as depicted in FIG. 4B, and processing steps shown
in FIG. 5C correspond to the processing of the package as depicted
in FIG. 4C. Also, while only representative shadow mask is depicted
herein those of skill in the art readily recognize that many
different specific shadow masks can be used according to the
instant invention based on a desired end product.
[0022] The present invention provides a hermetically sealed MEMS
package suitable for use in an implantable medical device, for
example. A glass lid is anodically bonded to a MEMS switch, forming
a sealed interior cavity for free movement of the MEMS switch. A
contact aperture is provided in the glass lid to allow electrical
contact to a metallization layer that is formed on a stationary
portion of the MEMS switch. This design provides excellent
mechanical stability and hermeticity, and is efficient to
manufacture, with all aspects fabricated at the wafer level.
[0023] Although the present invention has been described with
reference to preferred embodiments, workers skilled in the art will
recognize that changes may be made in form and detail without
departing from the spirit and scope of the invention.
* * * * *