U.S. patent application number 11/916162 was filed with the patent office on 2009-05-07 for microlithography projection objective.
This patent application is currently assigned to Carl Zeiss SMT AG. Invention is credited to Olaf Conradi, Aurelian Dodoc, Alexander Epple, Heiko Feldmann, Toralf Gruner, Julian Kaller, Vladimir Kamenov, Daniel Kraehmer, Thomas Okon, Jean-Claude Perrin.
Application Number | 20090115986 11/916162 |
Document ID | / |
Family ID | 36782280 |
Filed Date | 2009-05-07 |
United States Patent
Application |
20090115986 |
Kind Code |
A1 |
Feldmann; Heiko ; et
al. |
May 7, 2009 |
Microlithography projection objective
Abstract
Microlithography projection objectives for imaging into an image
plane a pattern arranged in an object plane are described with
respect to suppressing false light in such projection
objectives.
Inventors: |
Feldmann; Heiko; (Aalen,
DE) ; Kraehmer; Daniel; (Essingen, DE) ;
Perrin; Jean-Claude; (Givry, FR) ; Kaller;
Julian; (Koenigsbronn, DE) ; Dodoc; Aurelian;
(Heidenheim, DE) ; Kamenov; Vladimir; (Essingen,
DE) ; Conradi; Olaf; (Westhausen/Westerhofen, DE)
; Gruner; Toralf; (Aalen-Hofen, DE) ; Okon;
Thomas; (Aalen, DE) ; Epple; Alexander;
(Aalen, DE) |
Correspondence
Address: |
FISH & RICHARDSON PC
P.O. BOX 1022
MINNEAPOLIS
MN
55440-1022
US
|
Assignee: |
Carl Zeiss SMT AG
Oberkochen
DE
|
Family ID: |
36782280 |
Appl. No.: |
11/916162 |
Filed: |
May 23, 2006 |
PCT Filed: |
May 23, 2006 |
PCT NO: |
PCT/EP06/04876 |
371 Date: |
May 16, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
60686784 |
Jun 2, 2005 |
|
|
|
60790616 |
Apr 10, 2006 |
|
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Current U.S.
Class: |
355/66 ; 355/71;
359/733 |
Current CPC
Class: |
G03F 7/70941 20130101;
G02B 17/08 20130101; G03F 7/70283 20130101; G03F 7/702 20130101;
G03F 7/70225 20130101 |
Class at
Publication: |
355/66 ; 355/71;
359/733 |
International
Class: |
G03F 7/20 20060101
G03F007/20 |
Claims
1. A projection objective, comprising: a plurality of optical
components configured to image into an image plane a pattern
arranged in an object plane, the plurality of optical components
comprising a mirror, an imaging beam path that can be used for
imaging the pattern into the image plane having in the region of
the mirror beam path segments that run obliquely relative to one
another and overlap one another at least partially in an overlap
region and are spaced apart from one another outside the overlap
region by a gap; and a shield configured to suppress false light
being arranged in the gap, wherein the projection objective is a
microlithography projection.
2. The projection objective of claim 1, wherein the shield is
fastened on the first mirror.
3. The projection objective of claim 1, wherein the plurality of
optical components further includes a lens to form a catadioptric
system.
4. The projection objective of claim 1, wherein the plurality of
optical components has an optical axis.
5. The projection objective of claim 4, wherein the shield
configured to suppress false light comprises a section extending
substantially parallel to the optical axis.
6. The projection objective of claim 1, further comprising an
aperture stop defining the system aperture and having an optically
effective cross-section, wherein the optically effective
cross-section is adjustable.
7. The projection objective of claim 1, wherein the plurality of
optical components includes a first mirror and a second mirror one
of the beam path segments is a beam path segment reflected by the
second mirror another one of the beam path segments is a beam path
segment reflected by the first mirror and the shield is arranged
between the first mirror and the second mirror in the gap between
the two reflecting beam path segments.
8. The projection objective of claim 7, wherein the shield is
fastened on the first mirror.
9. The projection objective of claim 7, wherein the shield is
fastened on the second mirror.
10. The projection objective of claim 1, wherein the shield is a
plate or an aperture.
11. A objective configured to image into an image plane a pattern
arranged in an object plane, the projection objective comprising: a
first objective part; a second objective part; a third objective
part, the second objective part defining a light propagation
direction that differs from a light propagation direction in the
first objective part and from a light propagation direction in the
third objective part, a beam deflecting device between the first
and second objective parts and between the second and third
objective parts; and a shield being arranged in the region of the
beam deflecting device in such a way that during use direct light
leakage from the first objective part into the third objective part
is at least reduced, wherein the projection objective is a
microlithography projection objective.
12. The projection objective of claim 11, wherein the shield does
not limit the imaging beam path.
13. The projection objective of claim 11, wherein the beam
deflecting device has a first reflecting surface and a second
reflecting surface that are arranged at an angle to one another,
and wherein the shield extends in the direction of the second
objective part starting from the angle vertex of the beam
deflecting device.
14. The projection objective of claim 13, wherein the shield is a
plate.
15. The projection objective of claim 13, wherein the shield is
absorbing or is coated with an absorbing layer.
16. The projection objective of claim 11, wherein the intermediate
image is produced in the second and/or third objective part, and a
further shield is arranged in the region of the intermediate
image.
17. The projection objective of claim 16, wherein the further
shield is an aperture that does not limit the imaging beam
path.
18. The projection objective of claim 11, wherein the second
objective part is catadioptric.
19. The projection objective of claim 11, wherein the third
objective part is dioptric.
20. The projection objective of claim 11, wherein the shield can be
adjusted in position and/or can be variably set with regard to its
active cross section.
21. The projection objective of claim 20, wherein the setting of
the shield can be performed in common with the setting of an
aperture of the objective that limits the imaging beam path.
22. The projection objective of claim 20, wherein the setting of
the shield is a function of the size of the image filed used for
imaging.
23. The projection objective of claim 20, wherein the setting of
the shield can be performed as a function of the illumination
setting.
24. The projection objective of claim 11, wherein at least a
further shield is arranged to shield over-aperture light from the
object plane.
25. A projection objective configured to image into an image plane
a pattern arranged in an object plane, the projection objective
comprising: a plurality of optical components that respectively
have an optically active surface, wherein there is present a first
optical component of the plurality of optical components that has a
first optically operative surface that, during the operation of the
projection objective, has a first surface region not used by the
imaging beam path for imaging the pattern into the image plane, the
first optically operative surface being assigned a first shield
that masks out the first surface region, not used by the imaging
beam path, of the first optically operative surface in order to
suppress false light, wherein the projection objective is a
microlithography projection objective.
26. The projection objective of claim 25, wherein the first shield
is a plate arranged in the immediate vicinity of the first
optically operative surface.
27. The projection objective of claim 25, wherein the first shield
is an aperture arranged in the immediate vicinity of the first
optically operative surface and has an opening that is adapted to
the cross-sectional shape of the imaging beam path at the location
of the aperture.
28. The projection objective of claim 27, wherein the opening is
substantially rectangular.
29. The projection objective of claim 25, wherein the first shield
is a shielding coating on the first surface region not used by the
imaging beam path.
30. The projection objective of claim 25, wherein the first shield
is reflective for a wavelength of the light used for imaging.
31. The projection objective of claim 25, wherein the first shield
is absorbing for a wavelength of the light used to image or is
provided with an absorbing coating.
32. The projection objective of claim 31 wherein the absorbance of
the shield is at least approximately 95%.
33. The projection objective of claim 31, wherein the first shield
has photocatalytic properties.
34. The projection objective of claim 25, wherein the first
optically operative surface that is assigned the first shield is a
near-field surface.
35. The projection objective of claim 25, wherein the shield is
arranged between the object plane and the first optical component
of the projection objective, and/or between the last optical
component of the projection objective and the image plane.
36. The projection objective of claim 25, wherein the optical
component whose optically operative surface is assigned the shield
is a mirror.
37. The projection objective of claim 25 wherein the optical
component whose optically operative surface is assigned the shield
is a lens.
38. The projection objective of claim 25, wherein the first shield
can be adjusted in position and/or can be variably set with regard
to its active cross section.
39. The projection objective of claim 38, wherein the setting of
the first shield can be performed in common with the setting of an
aperture of the projection objective that limits the imaging beam
path.
40. The projection objective of claim 38, wherein the setting of
the first shield is a function of the size of the image field used
for imaging.
41. The projection objective of claim 38, wherein the setting of
the first shield can be performed as a function of the illumination
setting.
42. The projection objective of claim 25, wherein the plurality of
optical components have a further optical component that has a
further optically operative surface that, during operation of the
projection objective, has a further surface region not used by the
imaging beam path for imaging the pattern into the image plane, the
further optically operative surface being assigned a further shield
that masks out the further surface region, not used by the imaging
beam path, of the further optically operative surface.
43. The projection objective of claim 25, wherein the plurality of
optical components comprises at least two mirrors.
44. The projection objective of claim 43, wherein the plurality of
optical components comprises at least four mirrors.
45. The projection objective of claim 25, wherein it is designed as
an immersion objective.
46. The projection objective of claim 25, wherein a further shield
is arranged to shield over-aperture light from the object
plane.
47. A projection objective configured to image into an image plane
a pattern arranged in an object plane, the projection objective
having a first pupil plane and a second pupil plane, the projection
objective comprising: a plurality of optical components; a first
aperture stop defining the system aperture being arranged at least
near the first pupil plane; and a second aperture stop, wherein the
projection objective is a microlithography projection
objective.
48. The projection objective of claim 47, wherein the second
aperture stop is arranged near the first or second pupil plane.
49. The protection objective of claim 48, wherein the second
aperture stop is arranged in the second pupil plane.
50. The projection objective of claim 47, wherein the second
aperture stop is a fixed aperture stop.
51. The projection objective of claim 47, the first aperture stop
is adjustable with respect to its effective cross-section.
52. The projection objective of claim 47, wherein the second
aperture stop is formed by a non-transmissive coating on an optical
component of the plurality of optical components.
53. The projection objective of claim 47, wherein the second
aperture stop is formed by a plate arranged between two neighboring
components of the plurality of optical components.
54. The projection objective of claim 47, wherein at least one of
the optical components of the plurality of optical components has
an aspherical optically operative surface.
55. The protection objective of claim 47, having a numerical
aperture on the image side which is larger than about 0.8.
56. The projection objective of claim 47, wherein a distance L of
the at least one second aperture stop from the pupil plane nearest
to the image plane is chosen such that 0.5D<L<2D, wherein D
is a diameter of an optical component of the plurality of optical
components which has the maximum diameter of the optical
components.
57. The projection objective of claim 47, having an intermediate
image plane between the first pupil plane and the second pupil
plane.
58. A microlithography projection exposure machine having a
projection objective as claimed in claim 1.
59. A method, comprising: illuminating with ultraviolet light a
mask having a pattern via a projection objective as claimed in
claim 1; and imaging the pattern onto a photosensitive substrate
arranged in the region of an image plane of the projection
objective.
Description
BACKGROUND OF THE INVENTION
[0001] The invention relates to a microlithography projection
objective for imaging into an image plane a pattern arranged in an
object plane.
[0002] The invention further relates to a projection exposure
machine having such a projection objective.
[0003] The invention relates, furthermore, to a method for
producing semiconductor components and other finely structured
subassemblies.
[0004] Microlithography projection objectives are used in
projection exposure machines for producing semiconductor components
and other finely structured components, particularly in wafer
scanners and wafer steppers. Such projection exposure machines
serve the purpose of projecting patterns from photomasks or
graticules, which are also generally designated as masks or
reticles, onto an object (substrate) coated with a photosensitive
layer with very high resolution. In this case, the mask is arranged
in the object plane, and the substrate in the image plane of the
projection objective.
[0005] Known among projection objectives are ones which exhibit a
combination of refracting and reflecting optical elements, thus in
particular a combination of lenses and mirrors. Such projection
objectives are denoted as catadioptric.
[0006] An example of a catadioptric projection objective is
disclosed in document DE 101 27 227 A1. A further example of a
catadioptric projection objective is to be gathered from document
WO 2004/019128 A2.
[0007] For example, the catadioptric projection objective disclosed
in DE 101 27 227 A1 has, starting from the object plane, a first
objective part and a second objective part adjacent thereto, and a
third objective part adjacent thereto. Beam deflection takes place
in the transition from the first objective part to the second
objective part by means of a beam deflecting device that is formed
there by a first folding mirror. The second objective part has a
concave mirror which retroreflects the light again to the beam
deflecting device, and the beam deflecting device, which has a
further folding mirror in the transition from the second objective
part into the third objective part, then directs the light into the
third objective part. The two folding mirrors are at an angle of
approximately 90.degree. to one another. Moreover, in the case of
this known projection objective the optical arrangement is made
such that an intermediate image is produced in the third objective
part.
[0008] Not only is it possible within the meaning of the present
invention for a beam deflecting device to be formed by folding
mirrors, but the beam deflecting the device can have, for example,
a beam splitter cube or other optical elements suitable for beam
deflection.
[0009] A problem that can arise in the case of projection
objectives with beam deflection is that a portion of the light
passing through the projection objective leaks at the beam
deflecting device directly from the first objective part into the
third objective part by omitting the second objective part. Such
stray light or false light therefore does not traverse all the
optical elements of the projection objective and is thus incapable
of correctly imaging into the image plane of the projection
objective the pattern arranged in the object plane of the
projection objective, since the projection objective is designed
such that only light that traverses all the optical elements in the
prescribed sequence can contribute to proper imaging.
[0010] DE 101 27 227 A1 proposes arranging a stray light stop in
the region of the intermediate image in order to reduce stray or
false light. However, this does not effectively alleviate, still
less eliminate, the problem of the partial direct light leakage
from the first objective part into the third objective part.
[0011] As already mentioned above, microlithography projection
exposure machines are designed as steppers or as scanners. In the
case of steppers, a square or rectangular field is exposed on the
stationary wafer. A round field would have the effect of being
unable to make use of the complete wafer surface and is therefore
not used in facilities for the mass production of
semiconductors.
[0012] In the case of scanners, the pattern (reticle) and the wafer
move, the field exposed on the wafer and the reticle being square
or rectangular. Scanners are preferably used in the mass production
of semiconductors.
[0013] Although rectangular field shapes are preferred for reasons
of later process steps, in particular the division of the wafer
into individual pieces, for reasons of production engineering
projection objectives for use in steppers and scanners are
generally constructed from round lens elements.
[0014] In the case of a rectangular field exposure, as well, false
light occurs that makes no contribution to the imaging of the
projected pattern. In addition to the above-described effect in the
case of projection objectives having beam deflection, in the case
of which false light leaks from one objective part into another
objective part, while omitting specific objective parts, false
light can also arise in general from reflections at individual lens
surfaces and at the surfaces of the pattern (reticle) of the wafer,
such reflections failing to vanish despite the use of
antireflective layers on the lens surfaces. false light also arises
through scattering at the surfaces and in the volume of the
lenses.
[0015] Irrespective of the particular cause, false light disturbs
the lithographic process as soon as it falls onto the wafer since
the structures imaged by the exposure process widen owing to the
false light background. In other words, false light that is
propagating in the projection objective and reaches the image plane
of the projection objective disturbs the contrast of the imaging of
the pattern into the image plane.
[0016] As already described above, a projection objective operates
properly in terms of function only when the imaging beam path that
can be used for imaging traverses all the optically operative
surfaces in a predetermined sequence. False images arise in a
projection objective owing to false light that does not traverse
all the optically operative surfaces of the projection objective,
or that while actually traversing all the optically active surfaces
of the projection objective does so in a sequence other than is
required for proper imaging. In order for the false light to reach
the wafer, an even number of additional reflections must take
place. The additional reflections begin with the reflection at a
lens surface that is designed as refracting. Hereafter, the light
can be retroreflected at other lens surfaces or, in the case of
catadioptric projection objectives, at mirrors.
[0017] The optical system that belongs to this novel beam path is
designated as an "expanded" optical system. Such an "expanded"
system images just like the actual projection objective. The false
light that contributes to this imaging is certainly weak, since it
arises chiefly from a reflection at a refracting surface that
mostly also has a layer for reducing reflection.
[0018] The "expanded" optical system of the projection objective
guides the false light in the direction of the wafer such that a
false image is produced in the vicinity of the image plane of the
projection objective.
[0019] In any event, false light in projection objectives worsens
the imaging properties of the projection objective such that there
is a need for projection objectives in which false light is
suppressed as effectively as possible.
[0020] Still another problem in microlithography projection
objectives arises in connection with the requirement to provide a
uniform aperture over the entire used field. In projection
objectives for microlithography, a vignetting, as it is known, for
example, in objectives for photography, is undesired. In projection
objectives known from prior art it is common to provide a single
aperture stop in a pupil plane of the projection objective.
However, there are optical designs in which a single aperture stop
cannot guarantee the desired uniform aperture over the used
field.
[0021] The reason for a non-uniform aperture over the field is that
there are some rays which start from the object plane with an
aperture which is larger than the design aperture of the projection
objective and which are then aberrated so strongly that their
actual pupil plane is spaced apart from the pupil plane which
belongs to rays having apertures which are equal to or smaller than
the design aperture. Accordingly, these so-called over-aperture
rays are not necessarily mashed out by the system aperture stop,
but can reach the image plane if the optical components have a
sufficient extension in direction transverse to the propagation of
light. These over-aperture rays are typically strongly aberrated
and, when reaching the image plane, disturb the uniformity of the
image field.
[0022] In addition or independent from the problems mentioned
before, it can be an object in microlithography projection
objectives to mask out light in the beam path of the projection
objective such that the image plane remains completely unexposed. A
motivation for doing so may be the measuring of the diffraction
intensity distribution in order to obtain information for lense
heating corrections. Further, during an interruption of the
exposure process it is conceivable to supply the projection
objective with an illumination which is complementary to the light
used for imaging in order to produce a heating of the projection
objective which is as uniform and rotationally symmetrical as
possible, for example, if this is desired. In this case, too, it
must be made sure that no light enters the image plane.
SUMMARY OF THE INVENTION
[0023] It is an object of the present invention to provide a
microlithography projection objective of the type mentioned at the
beginning whose imaging properties are improved by a more effective
suppression of stray or false light.
[0024] It is a further object of the present invention to provide a
projection exposure machine having such a projection objective, as
well as a method for producing semiconductor components with the
aid of such a projection objective.
[0025] In accordance with a first aspect of the invention,
provision is made of a microlithography projection objective for
imaging into an image plane a pattern arranged in an objective
plane, comprising a first objective part, a second objective part
and at least one third objective part, the second objective part
defining a light propagation direction that differs from a light
propagation direction in the first objective part and from a light
propagation direction in the third objective part, and further
comprising at least one beam deflecting device between the first
and second objective parts and between the second and third
objective parts, at least one shield being arranged in the region
of the beam deflecting device in such a way that direct light
leakage from the first objective part into the third objective part
is at least reduced.
[0026] A direct light leakage from the first objective part into
the third objective part while omitting the second objective part
can be avoided by the provision of a shield in the region of the
beam deflecting device. Reflections that leak directly past the
beam deflecting device from the first objective part into the third
objective part and could contribute to falsifying the imaging of
the pattern into the image plane are rendered harmless by the
shield. The fraction of stray or false light in the image plane is
at least reduced by the provision of the at least one shield in the
region of the beam deflecting device.
[0027] The shield should preferably be arranged and/or designed
such that it does not limit the imaging beam path.
[0028] A shield such as is provided in the case of the projection
objective according to the invention is to be distinguished from
the system aperture stop or aperture stop usually provided for such
a projection objective. A system aperture stop limits the imaging
beam path, while the shield, be it designed as an aperture or as a
shield plate without an opening, should, however, as far as
possible not restrict or reduce the portion of the light used for
imaging.
[0029] If, as in the case of the known projection objective, the
beam deflecting device has a first reflecting surface and a second
reflecting surface that are arranged at an angle to one another,
the at least one shield extends in the direction of the second
objective part starting from the angle vertex of the beam
deflecting device, that is to say partially into said second
objective part.
[0030] In this case, the shield is preferably a plate, preferably
made from an absorbing material, for example from an absorbing
metal. Alternatively, the absorption can also be achieved by an
absorbing layer on the plate. Ideally, the absorption properties
are tuned to the wavelength of the light used.
[0031] In addition to the shield, in the region of the beam
deflecting device, whenever the projection objective produces at
least one intermediate image in the second and/or third objective
part it is preferred in addition to arrange at least one further
stray light shield in the region of the intermediate image.
[0032] It is possible in this way to reduce further the fraction of
stray light and false light that passes into the image plane and
worsens the image of the pattern in the image plane.
[0033] A shield that is arranged in the region of an intermediate
image is preferably a stray light stop that does not limit the
imaging beam path.
[0034] It is preferred, furthermore, that the at least one stray
light shield can be adjusted in position and/or is variable with
regard to its active cross section.
[0035] It is advantageous in this case that reduction in stray
light can be optimized for the respective projection objective by
adjusting the position and/or setting of the active cross section
of the at least one stray light shield, for example, by enlarging
or reducing the shield, for example in the form of a plate, the
optimization process being limited in that the imaging beam path is
at least not substantially limited or restricted by the adjustment
in position or the setting of the active cross section of the at
least one stray light shield.
[0036] The adjustment in position and/or setting of the active
cross section of the stray light shield is preferably performed as
a function of the illumination mode (setting), of the aperture of
the objective field size used.
[0037] As already mentioned above, the previously named stray light
stop only has the function of reducing the level of stray or false
light in the projection objective but not of limiting the lighting
beam path.
[0038] The projection objective according to the invention is, in
particular, a catadioptric projection objective in the case of
which the second objective part is, for example, catadioptric and
the third objective part is dioptric, the latter thus being
constructed only from refracting optical elements.
[0039] In accordance with a further aspect of the invention, there
is provided a microlithography projection objective for imaging
into an image plane a pattern arranged in an object plane,
comprising a plurality of optical components that respectively have
at least one optically operative surface, in which there is present
at least one first optical component of the plurality of optical
components that has at least one first optically operative surface
that, during the operation of the projection objective, has a first
surface region not used by the imaging beam path for imaging the
pattern into the image plane, the at least one first optically
operative surface being assigned at least one first shield that
masks out the first surface region, not used by the imaging beam
path, of the first optically operative surface in order to suppress
false light.
[0040] The basic idea of this aspect of the invention is that in
the case, in particular, of those projection objectives that are
used in projection exposure machines designed as steppers/scanners
and in the case of which a square or rectangular field on the wafer
is exposed, some of the optical components, which can be lenses or
mirrors, are not used over their entire surface by the imaging beam
path. In order to avoid here the propagation of false light in the
projection objective, in the case of the projection objective
according to the invention the unused surface regions of at least
one, preferably a number of optical components, in particular
lenses are masked out by at least one shield such that the false
light cannot propagate through the surface regions of these optical
components that are not used for the imaging beam path. It is
possible thereby to achieve an effective suppression of false
light.
[0041] It is preferred in this case when the at least one first
shield is a plate or aperture stop arranged in the immediate
vicinity of the at least one first optically operative surface,
said aperture stop having an opening that is preferably adapted to
the cross-sectional shape of the imaging beam path at the location
of the aperture.
[0042] The presence of a plate or aperture stop with opening as
shield has the advantage that a plate or aperture can be of movable
design, as a result of which it is possible to optimize the
suppression of false light by appropriately positioning the plate
or aperture. In addition, the aperture stop may also be removed
from the projection objective for full-field illumination with the
aid of simple means.
[0043] The opening is preferably substantially rectangular in the
case when the at least one shield is an aperture stop with
opening.
[0044] The at least one shield in the form of the aperture stop is
optimally adapted with the aid of this measure to a rectangular
imaging beam path such as is present in steppers or scanners.
[0045] It is particularly preferred when the at least one first
shield is a shielding coating on the first surface region of the at
least one first optically operative surface of the optical
component not used by the imaging beam path.
[0046] The advantage of this measure consists in that such a
coating can already be provided when producing the optical
component, it being possible to determine the useful surface region
of the optical component in advance by calculation.
[0047] Irrespective of whether the at least one shield is provided
in the form of a plate or aperture stop or in the form of a
coating, it is preferred, furthermore, when the at least one first
shield is reflective for a wavelength for the light used for
imaging.
[0048] Alternatively, or in addition to a reflection of the false
light, it is preferred, furthermore, when the at least one first
shield is absorbing for a wavelength of the light used for imaging,
or is provided with an absorbing coating.
[0049] The advantage of absorbing false light as against reflecting
false light consists in an even more effective suppression of false
light.
[0050] The absorbance of the shield is preferably at least
approximately 95%, preferably at least approximately 98%.
[0051] In this way, false light is suppressed in a particularly
effective way by absorption, and injurious flares are largely
avoided.
[0052] It is preferred, furthermore, in the case of an absorbing
shield when the at least one first shield has photocatalytic
properties.
[0053] By means of the photocatalytic properties, it is possible
for the at least one shield, be it in the form of a plate or
aperture stop or in the form of a coating on the surface of at
least one optical component, to be used, furthermore, in an
advantageous way to decompose adsorbed substances on the surface of
the shield, or to support the decomposition. The photocatalytic
decomposition of harmful substances such as, for example,
hydrocarbons reduces the concentration of such sub-stances in the
gas space of the projection objective and sub-stances such as could
entail a reduction in transmission or reflection are thereby
prevented from being precipitated onto the useful region of, for
example, lenses or mirrors of the projection objective.
[0054] In a further preferred refinement, the at least one first
optically operative surface that is assigned the at least one first
shield is a near-field surface, in particular a surface that is
located in the vicinity of an intermediate image of the imaging
beam path or in the vicinity of the image plane or of the object
plane.
[0055] By comparison with other optical components of the
projection objective, optical components that are arranged in the
vicinity of a field, in particular an intermediate image, have only
a small optically used surface, while a large portion of the
optical surface is not used for the imaging beam path. It is
precisely such components that are therefore particularly suitable
for suppressing false light, in particular when these components
are assigned a shield in the form of a coating. In particular,
shields can be provided between the object plane and the first lens
and/or between the last lens and the image plane.
[0056] Optical components whose at least one optically active
surface is assigned the at least one shield can be mirrors or else
lenses.
[0057] Furthermore, as in the case of the projection objective in
accordance with the first aspect of the invention, it is pre-ferred
when the at least one first shield can be adjusted in position
and/or can be variably set with regard to its active cross
section.
[0058] It is likewise preferred, in turn, when the setting of the
at least one first shield can be performed in common with the
setting of an aperture of the projection objective that limits the
imaging beam path.
[0059] The setting of the at least one first shield will preferably
be a function in this case of the size of the image field used for
imaging, as is the case, in particular, with a projection objective
for use in a stepper or scanner.
[0060] The setting of the at least one first shield is preferably
performed as a function of the illumination setting.
[0061] The illumination setting is understood as the size of the
field used, and the angular distribution of the light used for
illuminating the reticle (pattern).
[0062] The second aspect of the present invention can
advantageously be used, in particular, with those projection
objectives that produce one or more intermediate images between the
reticle and the wafer, as is the case with catadioptric projection
objectives.
[0063] In such a case, the plurality of optical components have at
least one further optical component that has at least one further
optically operative surface that, during operation of the
projection objective, has a further surface region not used by the
imaging beam path for imaging the pattern into the image plane, the
at least one further optically operative surface being assigned at
least one further shield that masks out the further surface region,
not used by the imaging beam path, of the further optically
operative surface.
[0064] The more optical components whose optically operative
surface is only used in part by the imaging beam path for imaging
the reticle onto the wafer that are assigned a shield, in
particular in the form of a coating, the more effectively false
light can be suppressed, the imaging properties of the projection
objective thereby being further improved.
[0065] The second aspect of the invention can advantageously be
used, in particular in the case of projection objectives whose
plurality of optical components have at least two mirrors or at
least four mirrors.
[0066] Furthermore, the invention can be used not only in the case
of so-called dry objectives, but also with immersion objectives in
which there is present between the wafer and the terminating
element of the projection objective an immersion liquid for
reducing the effective wavelength of the light and for increasing
the numerical aperture.
[0067] In accordance with a yet further aspect of the invention,
there is provided a microlithography projection objective for
imaging into an image plane a pattern arranged in an object plane,
comprising a plurality of optical components that includes at least
one mirror, wherein an imaging beam path that can be used for
imaging the pattern into the image plane has in the region of the
at least first mirror beam path segments that run obliquely
relative to one another and overlap one another at least partially
in an overlap region and are spaced apart from one another outside
the overlap region by a gap, at least one shield for suppressing
false light being arranged in the gap.
[0068] The basic idea of this aspect of the invention is that in
the case of a catadioptric projection objective having at least one
mirror, there are beam path segments of the imaging beam path that
overlap at least partially owing to the reflection at the at least
one mirror, but which run separately outside the overlap region and
then leave free between themselves an admittedly narrow gap.
[0069] Such beam path segments are encountered, in particular, in
catadioptric projection objectives having optical elements through
which the beam path passes repeatedly.
[0070] In accordance with the third aspect of the invention, a
shield is now introduced precisely into this gap in order to
suppress propagation of false light. The shield for suppressing
false light thereby fills up the interspace between the two beams
or beam path segments. The shield does not in this case interfere
with the proper imaging beam path, but prevents false light from
propagating beyond the gap.
[0071] The third aspect of the invention can be used particularly
effectively in the case of a projection objective whose plurality
of optical components includes at least one first and at least one
second mirror, one of the beam path segments being a beam path
segment reflected by the second mirror, and another one of the beam
path segments being a beam path segment reflected by the first
mirror, the at least one shield being arranged between the first
mirror and the at least one second mirror.
[0072] It is advantageous in this case that the shield arranged
between the two mirrors can act on both sides, specifically by
virtue of the fact that the beams that propagate toward the second
mirror are blocked on the image side of the shield, while the light
beams that pass by the shield are blocked by the object side of the
shield after reflection at the second mirror.
[0073] A blocking effect can also be achieved by a number of
sequentially introduced shields in the space between the two
mirrors.
[0074] It is preferably possible to provide a plate or aperture
with an opening as the at least one shield, the at least one shield
preferably being fastened on the first or second mirror.
[0075] The third aspect of the invention can, however,
advantageously be used not only with projection objectives having
two mirrors, but also with other catadioptric projection objectives
having more than two mirrors.
[0076] In accordance with a fourth aspect of the invention, a
microlithography projection objective for imaging into an image
plane a pattern arranged in an object plane is provided, comprising
a plurality of optical components, and a first pupil plane and at
least a second pupil plane, a first aperture stop defining the
system aperture being arranged at least near the first pupil plane,
and further comprising at least a second aperture stop.
[0077] According to this aspect of the invention, the
microlithography projection objective according to the invention is
provided with at least two aperture stops, one defining the system
aperture which is already present in known projection objectives,
and the at least one further aperture stop can be particularly
useful for shielding over-aperture light coming from the object
plane so that this over-aperture light is hindered to reach the
image plane. The at least one second aperture stop is preferably
arranged in a position in the projection objective where the
over-aperture rays are separated from the rays which are used for
imaging.
[0078] Preferably, the at least one second aperture stop is
arranged near the first or second pupil plane or in the second
pupil plane of the projection objective, in particular if the
overaperture light is separated in this second pupil plane from the
rays used for imaging.
[0079] If the at least second aperture stop is used for masking out
over-aperture light, it is preferably arranged in a position where
the separation of the over-aperture rays from the rays used for
imaging is maximum.
[0080] The at least one second aperture stop is preferably arranged
in a distance L from a pupil plane, wherein L is chosen such that
0.5D<L<2D, wherein D is a diameter of an optical component of
the plurality of optical components which have the maximum diameter
of the optical components.
[0081] In a further preferred embodiment, the at least one second
aperture stop is formed by a non-transmissive coating on an optical
component of the plurality of optical components.
[0082] This measure is advantageous in case that there is not
sufficient space for introducing a plate as the aperture stop. A
non-transmissive coating can be formed by e.g. blacking a part of
the surface of the respective optical component.
[0083] The at least one second aperture stop cannot only be used
for masking out over-aperture rays, but also for shutting off the
beam path in co-acting with the system aperture stop.
[0084] The provision of at least a second aperture stop in the
projection objective is in particular advantageous in case the
projection objective has at least one optical component having an
aspherical optically operative surface.
[0085] The provision of at least one second aperture stop is also
advantageous in case the projection objective has at least two
pupil planes separated by an intermediate image plane.
[0086] A further advantage of the provision of at least a second
aperture stop is that requirements on the mechanical tolerances of
the maximum aperture provided by the adjustable system aperture
stop can be lowered, because the at least one second aperture stop
can take over the function of the system aperture stop for the
maximum apertures.
[0087] In accordance with a yet further aspect of the invention, a
microlithography projection exposure machine has a projection
objective of the previously mentioned types.
[0088] In accordance with a yet further aspect of the invention, a
method is provided for producing semiconductor components and other
finely structured components, wherein a mask with a pre-scribed
pattern is provided, the mask is illuminated with ultraviolet light
of a prescribed wavelength, and the pattern is imaged onto a
photosensitive substrate arranged in the region of an image plane
of the projection objective.
[0089] Further advantages and features emerge from the following
description.
[0090] It is self-evident that the abovementioned features which
are still to be explained below can be used not only in the
combination respectively specified, but also in other combinations
or on their own without departing from the scope of the present
invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0091] Exemplary embodiments of the invention are illustrated in
the drawings and explained in more detail hereafter with reference
thereto. In the drawings:
[0092] FIG. 1 shows a first exemplary embodiment of a projection
objective in side view;
[0093] FIG. 2 shows an enlarged section of the projection objective
in FIG. 1 in the region of the beam deflecting device of the
projection objective;
[0094] FIG. 3 shows a further exemplary embodiment of a projection
objective in side view;
[0095] FIG. 3A shows a section of the projection objective in FIG.
3 on an enlarged scale;
[0096] FIG. 4 shows a projection exposure machine comprising the
projection objective in FIG. 1 in a schematic illustration;
[0097] FIG. 5 shows the projection objective in FIG. 1 with a
modification regarding the false light suppression;
[0098] FIG. 6 shows a further exemplary embodiment of a projection
objective with measures for false light suppression;
[0099] FIG. 7 shows a yet further exemplary embodiment of a
projection objective with measures for false light suppression;
[0100] FIG. 8 shows a yet further exemplary embodiment of a
projection objective with measures for false light suppression;
[0101] FIG. 9 shows a yet further exemplary embodiment of a
projection objective with measures for false light suppression;
[0102] FIG. 10 shows a yet further exemplary embodiment of a
projection objective with measures for false light suppression;
[0103] FIG. 11 shows a yet further exemplary embodiment of a
projection objective with measures for false light suppression;
and
[0104] FIG. 12 shows a yet further exemplary embodiment of a
projection objective according to another aspect of the
invention.
DETAILED DESCRIPTION OF PREFERRED EXEMPLARY EMBODIMENTS
[0105] FIG. 1 shows a microlithography projection objective
provided with the general reference numeral 10 intended for imaging
into an image plane 14 a pattern (not shown) arranged in an object
plane 12.
[0106] The projection objective 10 has a first objective part 16, a
second objective part 18 and a third objective part 20.
[0107] The first objective part 16 is dioptric and is formed by a
lens L.sub.1.
[0108] The second objective part 18 is catadioptric and has lenses
L.sub.2, L.sub.3 and a concave mirror M.sub.2.
[0109] The third objective part 20 is dioptric and has lenses
L.sub.4 to L.sub.17 and an end plate L.sub.18.
[0110] As shown in FIG. 1, the light propagation direction in the
second objective part 18 differs from the light propagation
direction in the first objective part 12 and in the third objective
part 20. To this end, the projection objective 10 has a beam
deflecting device 22, that is formed in the exemplary embodiment
shown by two folding mirrors M.sub.1 and M.sub.3. The folding
mirror M.sub.1 deflects the light beam coming from the first
objective part 16 into the second objective part 18 toward the
mirror M.sub.2, and the second folding mirror M.sub.3 deflects the
light beam coming from the second objective part 18 into the third
objective part 20.
[0111] The light propagation direction in the third objective part
20 corresponds to that in the first objective part 16.
[0112] A shield 24 that is non-transmissive to light is provided in
the region of the beam deflecting device 22 in order to avoid a
direct light leakage from the first objective part 16 into the
third objective part 20, for example reflections from the surfaces
of the lens L.sub.1. In particular, the shield 24 prevents light
leaking from the first objective part 16 into the third objective
part 20 with the omission of the second objective part 18, that is
to say prevents it from not going through the lenses L.sub.2,
L.sub.3 and being reflected at the mirror M.sub.2.
[0113] As already mentioned, the beam deflecting device 22 is
formed by the two folding mirrors M.sub.1 and M.sub.3, whose
reflecting surfaces are arranged at an angle to one another, as is
illustrated in FIGS. 1 and 2. The two reflecting surfaces, that is
to say the mirrors M.sub.1 and M.sub.3 are arranged in accordance
with the beam deflection to be effected at an angle (here
approximately 90.degree.) to one another, the shield 24 extending,
starting from the angle vertex of the two mirrors M.sub.1 and
M.sub.3 in the direction of the second objective part 18.
[0114] The shield 24 is a plate 26, for example, a metal plate,
that absorbs in the wavelength region of the light used. In
addition, this plate can be provided with an absorbing layer.
Instead of a metal plate, however, it is also possible to use an
element made from another material that may be coated so as to be
absorbing. In accordance with FIG. 2, the two mirrors M.sub.1 and
M.sub.3 are slightly apart from one another at the angle vertex
such that the plate 26 can be positioned there and does not mask
out the useful light.
[0115] The shield 24 is designed and arranged such that it does not
limit or restrict the imaging beam path, that is to say the beam
path of the light that is to be used for imaging. The positioning
and extent of the plate 26 in the direction of the light
propagation into the second objective part 18 are to be designed
correspondingly.
[0116] A further shield 28 is arranged in the region of an
intermediate image 30, which is produced in the third objective
part 20, in order to further reduce the level of stray light in the
projection objective 10.
[0117] The shield 28 comprises a stray light stop 32 that reduces
the passage of stray light. The stray light stop 32 is, however, to
be distinguished from a system aperture stop 34 that serves to
limit the imaging beam path. The stray light stop 32, by contrast,
does not limit the imaging beam path, but serves to reduce stray
light fractions in the projection objective 10.
[0118] It is preferably provided that the shield 24 and/or the
shield 28 can be adjusted in position, and/or can be variably set
with regard to its active cross section. For example, the plate 26
of the shield 24 could be movable and of variable length such that
the optimum position and the optimum active cross section of the
plate 26 can be set in order to reduce stray light. Adjusting the
position and/or setting of the active cross section of the stray
light shield is preferably performed as a function of the
illumination mode (setting), of the aperture of the objective
and/or of the object field size that is used.
[0119] It could be provided, for example, in the case of the stray
light stop 32 to vary the opening cross section of the stray light
stop 32 and/or to configure the stray light stop 32 such that it
can be adjusted in position so that the stray light stop 32 can be
brought into the optimum position.
[0120] It is self-evident that further shields can be provided in
the projection objective 10 in order to reduce the level of stray
light in the projection objective 10.
[0121] It has emerged that a stray light reduction of approximately
30% and more is within the range of the possible with the aid of
suitably mounted shields.
[0122] FIG. 3 illustrates a further microlithography projection
objective 40 for imaging a pattern (not illustrated) arranged in an
object plane 42 in an image plane 44.
[0123] The projection objective 40 is disclosed in document WO
2004/019128 A2, to which reference may be made for a more accurate
description of the design.
[0124] Like the projection objective 10 the projection objective 40
is a catadioptric projection objective, the projection objective 40
having a first objective part 46 with a plate L.sub.1 and lenses
L.sub.2 to L.sub.11, a second objective part 48 with lenses
L.sub.12, L.sub.13 and a mirror M.sub.2 and a third objective part
50 with lenses L.sub.14 to L.sub.28.
[0125] A beam deflecting device 52 that, as in the case of the
exemplary embodiment in FIG. 1, comprises a folding mirror M.sub.1
and a folding mirror M.sub.3 is arranged between the first
objective part 46 and the second objective part 48 or the second
objective part 48 and the third objective part 50.
[0126] In the case of the projection objective 40, as well, there
is provided in the region of the deflecting device 52 a shield 54,
comparable to the shield 24 of the projection objective 10, which
has the effect of preventing stray light leaking from the first
objective part 46 into the third objective part 50.
[0127] An enlarged section of the projection objective 40 in the
region of the beam deflecting device 52 is illustrated in FIG. 3A.
In addition to the shield 54, in the case of the projection
objective 40 there are provided a further shield 54a and a further
shield 54b that are respectively arranged in the region of an
intermediate image of the projection objective 40. The shields 54a
and 54b are designed as stray light stops.
[0128] For the rest, reference may be made to the description of
the shield 24 in FIG. 1 with regard to the configuration of the
shield 54, that is to say the configuration of the shield 54
corresponds to that of the shield 24.
[0129] The general reference 60 in FIG. 4 indicates a projection
exposure machine in which, for example, the projection objective 10
is used. The projection exposure machine comprises a laser light
source 62 with a device 64 for narrowing the bandwidth of the
laser. An illumination system 66 produces a large, sharply
delimited and very homogenously illuminated image field that is
adapted to the telecentric requirements of the down-stream
projection objective 10. The illumination system 66 has devices for
selecting the illumination mode and can, for example, be switched
between conventional illumination with a variable degree of
coherence, annular field illumination and dipole or quadrupole
illumination. Arranged after the illumination system is a device 68
for holding and manipulating a mask 70, such that the mask 70 lies
in the object plane 12 of the projection objective 10 and can be
moved in this plane for scanning operation. The device 68
correspondingly comprises the scanning drive.
[0130] Following after the object plane 12 is the projection
objective 10 that projects an image of the mask 70 on a reduced
scale onto a substrate or wafer 72 that is covered with a
photoresist layer and is arranged in the image plane 14 of the
projection objective 10. The substrate or the wafer 72 is held by a
device 74 that comprises a scanner drive in order to move the wafer
synchronously with the mask 70. All the systems are controlled by a
control unit 74. The design of such systems is, like their mode of
operation, known per se, and will therefore not be described in
more detail here.
[0131] In the case of a method for producing semiconductor
components and other finely structured subassemblies, the mask 70
is provided with a prescribed pattern (not illustrated). By means
of the illumination device 66, the mask 70 is illuminated with
ultraviolet light of a predetermined wavelength from the laser 62.
It is possible in this case to set various illumination modes that
are sufficiently well known from the literature. The pattern of the
mask 70 is then imaged by means of the projection objective 10 onto
the substrate or the wafer 72 and into the image plane 14 of the
projection objective 10. Various aperture openings can be set in
this case.
[0132] FIG. 5 shows, once again, the projection objective 10 in
FIG. 1, further measures for false light suppression being provided
at the projection objective 10.
[0133] In order to suppress false light, the shields to be
described below serve the purpose of masking out the respectively
unused surface regions of the optical components to which these
shields are assigned. The function of these shields is therefore
different from the shield 24, that has already been described
above, and whose function consists in preventing the propagation of
light from the first objective part 16 into the third objective
part 20 with the omission of the second objective part 18.
[0134] According to FIG. 5, the lens L.sub.5 has a surface region
U.sub.L5 that is not used by the imaging beam path for imaging the
object plane 12 into the image plane 14. A shield 80 that masks out
the unused surface region U.sub.L5 of the lens L.sub.5 in order to
suppress false light is assigned to this unused surface region
U.sub.L5. The shield 80 is designed in the form of a coating 82
that is, in particular, absorbing for the wavelength of the light
used for imaging. The absorbance of the shield 80 is in this case
at least approximately 95%, preferably at least approximately 98%.
The shield 80 in the form of the coating 82 can, however, also have
alternatively or additionally reflecting properties.
[0135] The shield 80 further preferably has photocatalytic
properties in order to decompose contaminants that are deposited on
it, for example hydrocarbons. The gas space of the projection
objective 10, which is located between the optical components, is
thereby freed from these contaminants.
[0136] The lens L.sub.5 is located in the vicinity of a field
plane, specifically in the vicinity of the intermediate image 30.
However, by contrast with the stray light stop 32, the shield 80 is
assigned directly to the lens L.sub.5 and even applied, in the form
of the coating 82, directly to the lens L.sub.5.
[0137] A further optical component that is suitable for being
assigned a shield for suppressing false light is the lens L.sub.6,
which has a surface region U.sub.L6 not used by the imaging beam
path. The lens L.sub.6 is correspondingly assigned a shield 84
that, in turn, is applied in the form of a coating 86 on the
optically active surface of the lens L.sub.6.
[0138] The last lens element L.sub.18, which is directly adjacent
to the image plane 14, has a surface region U.sub.L18 not used by
the imaging beam path, as is illustrated in FIG. 5. A further
shield 88, which is formed from a coating 90, is correspondingly
assigned on both sides to the last lens element L.sub.18. In the
case of the last lens element L.sub.18, the coating 90 is formed
annularly thereon such that the useful light can penetrate to the
image plane 14 through the opening in the shield 88 in the form of
the coating 90.
[0139] FIG. 6 shows a further catadioptric projection objective
100, in which, as described previously with reference to FIG. 5,
measures are provided for false light suppression. The projection
objective 100 is disclosed in US 2005/0190435 A1 to which reference
may be made for a more accurate description of the design.
[0140] The projection objective 100 images an object plane 101 into
an image plane 102. The projection objective 100 produces between
the object plane 101 and the image plane 102 two intermediate
images 103 and 104 that are located in a catadioptric objective
part 105, upstream of which a refractive objective part 106 is
located, and downstream of which a refractive objective part 107 is
located.
[0141] Among the plurality of optical components of the projection
objective 100, which comprises lenses and two mirrors, are ones
whose at least one optically operative surface has a surface region
that, during operation of the projection objective, is not used by
the imaging beam path for imaging the object plane 101 into the
image plane 102. These optical components are suitable for being
directly assigned to a shield.
[0142] A lens 108 that is assigned a shield 110 in the form of a
coating 112 belongs to these optical components. The coating 112 is
applied to the optically operative surface, on the image side, of
the lens 108, and preferably has, in turn, the properties of the
coatings 82, 86 and 90, which have already been described with
reference to FIG. 5.
[0143] A mirror 114 of the projection objective 100 likewise has a
surface region not used by the light and which is provided with a
shielding coating 116.
[0144] A lens 118 directly adjacent to the mirror 114 has an
optically operative surface that has a surface region not used by
the imaging beam path, and that is correspondingly provided with a
shielding coating 120.
[0145] Finally, a last lens element 122 is likewise provided with a
shielding coating 124.
[0146] The abovenamed optical components, which are assigned a
shield as described, are all near the field, the lenses 108, 118
and the mirror 116 being arranged in the vicinity of the
intermediate images 103 and 104, while the last lens element 122 is
arranged in the vicinity of the image plane 102. Such nearfield
optical components are suitable, in particular, for being directly
assigned a shield that, for the purpose of suppressing false light,
masks out the respectively unused surface region of the optically
operative surface of the respective optical component.
[0147] FIG. 7 shows a further projection objective 200, in the case
of which measures comparable to FIGS. 5 and 6 are provided in order
to suppress false light. The projection objective 200 is likewise
disclosed in US 2005/0190435 A1.
[0148] The projection objective 200 has a plurality of optical
components that image an object plane 201 into an image plane 202.
The projection objective 200 has a refractive first objective part
210, a catoptric second objective part 220, that is formed from two
mirrors 221 and 222, and a refractive third objective part 230.
[0149] An intermediate image 203 and an intermediate image 204 are
produced in the catoptric objective part 220.
[0150] A last lens 232 of the first objective part 210 is provided
with a shielding coating 234. A first lens 236 of the third
objective part 230 is provided with a shielding coating 238. A last
lens element 240 is provided with a shielding coating 242.
[0151] Here, as well, near-field optical components have been
selected for the measures for suppressing false light.
[0152] Finally, FIG. 8 shows a further projection objective 300, in
the case of which measures are provided for suppressing false
light. The projection objective 300 is likewise disclosed in US
2005/0190435 A1.
[0153] The projection objective 300 is a catadioptric projection
objective that images an object plane 301 into an image plane 302.
The projection objective 300 has a refractive first objective part
310, a catoptric second objective part 320 and a refractive third
objective part 330.
[0154] The catoptric objective part 320 has four mirrors 306, 307
and 321, 322.
[0155] The projection objective 300 produces intermediate images in
the catoptric objective part 320.
[0156] A lens 332 that is located in a position near the field has
a surface region that is not used by the imaging beam path and is
provided with a shielding coating 334. A further lens 336 is
provided with a shielding coating 338 and a yet further lens 340 is
provided with a shielding coating 342.
[0157] A last lens element 344 is likewise provided with a
shielding coating 346.
[0158] Particularly when such projection objectives are designed as
immersion objectives, the last lens elements, for example the lens
element 344, are preferably provided with a coating that protects
the last lens element 344 against degradation by the immersion
liquid. In such a case, this protective coating can, in particular,
also be designed with a shielding action, that is to say the
protective layer then serves not only to protect the last lens
element 344, but also to suppress false light.
[0159] FIGS. 9 to 11 show projection objectives in the case of
which measures are provided for false light suppression in
accordance with the invention.
[0160] The measures for false light suppression that are taken in
the case of the projection objectives that are to be described
below are based on the following principle. In the case of a
projection objective that has at least one mirror, an imaging beam
path that can be used to image the pattern into the image plane can
have in the region of the at least one mirror beam path segments
that run obliquely relative to one another and overlap one another
at least partially in an overlap region. The beam path segments are
spaced apart from one another by a gap or free space outside the
overlap region. A shield is arranged in this case in the gap in
order to suppress false light. When such a projection objective has
a number of such gaps or free spaces between the beam path segments
or light bundles, it is preferably possible to introduce into each
of these free spaces a shield, for example, in the form of one or
more stray light stops, such that these free spaces or gaps are no
longer available for the propagation of false light. False light
can be effectively suppressed in this way.
[0161] FIG. 9 shows a projection objective 400, that has between an
object plane 402 and an image plane 404 a first catadioptric
objective part 406 and a second dioptric objective part 408. The
projection objective 400 is described in document WO 2004/107011
A1, in FIG. 5 thereof.
[0162] The catadioptric objective part 406 has a first mirror 410
and a second mirror 412.
[0163] In order to suppress the propagation of false light, a first
shield 414 is provided in the form of a stray light stop 416, and a
second shield 418 is provided in the form of a stray light stop
420. The stray light stops 416 and 420, which can also be designed
as sections of a stray light stop of a unipartite design, are, as
emerges from FIG. 9, located in the vicinity of the mirrors 410 and
412, the stray light stop 416 extending into the region between the
mirrors 410 and 412. The stray light stop 420 also has a section
422 that projects into the region between the mirrors 410 and 412.
The stray light stops 416 and 420 have been installed such that the
free space between the light bundles is filled between the two
mirrors 410 and 412. Sections 416a and 420a, extending radially
relative to the optical axis 440, of the stray light stops 416 and
420 prevent false light from passing from the object plane 402
along the first mirror 410 or along the second mirror 412 while
omitting the latter, and prevent the lenses from imaging the second
objective part 408 onto the image plane 404.
[0164] FIG. 10 shows a projection objective 500 that is likewise
shown in the abovenamed document WO 2004/107011 A1, in FIG. 9
thereof, and is described in that document.
[0165] The projection objective 500 has between an object plane 502
and an image plane 504 four mirrors 506, 508, 510 and 512 that
belong to two objective parts 514 and 516 of the projection
objective 500 from which the projection objective 500 is
constructed.
[0166] Shields 518, 520 and 522 are provided in the case of the
projection objective 500 in order to suppress the propagation of
false light. The shield 518 is a stray light stop 524 that has
sections 526, 528 and 530 that can be designed as one subassembly,
appropriate passages being provided in the stray light stop 424 for
the imaging light provided for imaging. The shields 520 and 522 are
likewise designed in the form of stray light stops that are
arranged in the free space between light bundles of the imaging
light.
[0167] Finally, FIG. 11 shows a projection objective 600, that is
illustrated in the abovementioned document WO 2004/107011 A1 in
FIG. 14 thereof, and is described in that document.
[0168] The projection objective has a total of six mirrors between
an object plane 602 and an image plane 604, specifically in the
direction of the light propagation: a first mirror 606, a second
mirror 608, a third mirror 610, a fourth mirror 612, a fifth mirror
614 and a sixth mirror 616.
[0169] In order to prevent the propagation of false light in the
projection objective 600, a number of shields are arranged in the
form of stray light stops 618, 620, 622 and 624 in the region of
the mirrors 606 to 616, and these in turn shield the free space
between the light bundles to be used for imaging against the
propagation of false light.
[0170] FIG. 12 shows another embodiment of a microlithography
projection objective 700 for imaging a pattern arranged in an
object plane 702 into an image plane 704.
[0171] The projection objective 700 comprises a plurality of
optical components 705 to 733, wherein the optical components 713,
717 and 718 are mirrors and the remaining components of the optical
component 705 to 733 are lenses.
[0172] The projection objective 700 further has a first pupil plane
736 in which a first aperture stop 738 is arranged. The aperture
stop 738, which is adjustable in cross section defines the system
or design aperture of the projection objective 700. A second pupil
plane 740 is present between the optical components 707 and
708.
[0173] In the illustration of FIG. 12, two field points 742 and 744
of the object plane 702 are shown which illustrate the illuminated
area of the pattern in the object plane 702. Starting from the
field points 742 and 744, light rays propagate through the optical
components 705 to 733 and reach the image plane 704 in an area 746.
The light rays which reach the image plane 746 in the area 746 are
used for imaging the pattern arranged in the object plane 702 into
the object plane 704.
[0174] As shown in FIG. 12, there is a ray 748 starting from field
point 742 in the object plane 702 which starts with an aperture
which is larger than the aperture of the other rays, for example
ray 749, which also start from the field point 742. Ray or rays 748
is/are called an over-aperture ray.
[0175] FIG. 12a shows the first four optical components 705 to 708
in an enlarged scale, showing the rays starting from field points
742 and 744 in more detail.
[0176] The over-aperture ray 748 which actually is a small bundle
of rays, propagates through the projection objective 700 partially
separated from the rays used for imaging, and partially not
separated from the rays used for imaging, the latter reaching the
image plane 704 in the area 746. The over-aperture rays, instead,
reach the image plane 704 in an area 750. The over-aperture rays
748 disturb the imaging, in particular by producing a non-uniform
field in the image plane 704.
[0177] In order to prevent the over-aperture rays 748 from reaching
the image plane 704, at least a second aperture stop in addition to
the system aperture stop 738 is provided in the projection
objective 700 as described in the following.
[0178] The second aperture stop is preferably arranged at a
position in the projection objective 700, where the over-aperture
rays 748 are separated from the "ordinary" rays which are useful
for imaging. Such a position may be for example the space between
the optical component 706 and the optical component 707 (see. arrow
752 in FIG. 12A) and/or the location between the optical component
707 and 708 (see arrow 754 in FIG. 12A). In the latter case,
because the space between the optical components 707 and 708 is
small, the second aperture stop can be formed by a coating 756 on
the optical component 707 or 708 which is non-transmissive to the
light used for the exposure operation. The coating can be formed by
a blacking of the respective portion of the surface of the optical
component 707, for example.
[0179] At the position shown by arrow 752, the at least one second
aperture stop can be formed by a plate having suited shielding
properties for shielding or masking out the over-aperture rays
748.
[0180] Another position which is very suitable for arranging at
least a second aperture stop for masking out the over-aperture rays
748 is in an area 758 of the projection objective 700, where the
over-aperture rays 748 are significantly separated from rays 760,
which are the rays used for imaging and having the largest height
with respect to the optical axis. It can be seen in FIG. 12 that
the rays 748 are strongly refracted or aberrated when emerging from
component 724, far more than the "ordinary" rays.
[0181] For example, a second or further aperture stop 762 can be
arranged between the optical component 725 and the optical
component 726, and/or between the optical components 726 and 727,
etc.
[0182] The position of the second or further aperture stop 762 is
preferably chosen such that the distance L of the aperture stop 762
from the system aperture 738 is such that 0.5D<L<2D, wherein
D is the maximum diameter of the optical components in this
area.
[0183] The at least one second aperture stop, when for example
arranged at the position shown by arrow 752 or the aperture stop
762 preferably are fixed aperture stops, and the aperture stop 738
defining the system aperture is adjustable with respect to its
effective cross-section.
[0184] The projection objective 700 has at least one intermediate
image plane between the first pupil plane 738 and the second pupil
plane 740. Further, at least one of the optical components 705 to
733 of the projection objective 700 may have an aspherical
optically operative surface. In particular in projection objectives
having components with aspherically operative surfaces,
over-aperture rays like over-aperture rays 748 are aberrated to a
higher degree as in projection objectives without aspherical
components. Thus, the provision of at least a second aperture stop
in such a projection objective having aspherical components is in
particular advantageous.
[0185] It is to be understood that at least a second aperture stop
as described with reference to FIG. 12 can also be provided in any
of the projection objectives shown in FIG. 1 to 11, if appropriate.
Vice versa, the shields for shielding false light which have been
described with respect to FIG. 1 to 11, can be provided within
projection objective 700, too.
* * * * *