U.S. patent application number 12/123109 was filed with the patent office on 2008-09-18 for piezoelectric element and method for manuacturing piezoelectric element.
This patent application is currently assigned to SONY CORPORATION. Invention is credited to Manabu Aizawa, Junichi Honda, Teruo Inaguma, Eiji Nakashio, Tadashi Sakurai, Koji Suzuki, Kazuo Takahashi, Takashi Tamura.
Application Number | 20080222865 12/123109 |
Document ID | / |
Family ID | 36599295 |
Filed Date | 2008-09-18 |
United States Patent
Application |
20080222865 |
Kind Code |
A1 |
Nakashio; Eiji ; et
al. |
September 18, 2008 |
PIEZOELECTRIC ELEMENT AND METHOD FOR MANUACTURING PIEZOELECTRIC
ELEMENT
Abstract
A piezoelectric element with a substrate, a first electrode film
disposed on the substrate, a piezoelectric film disposed on the
first electrode film, and a second electrode film disposed on the
piezoelectric film, and a method of forming same. The piezoelectric
film has a laminated structure composed of a plurality of
crystallized piezoelectric thin films. The piezoelectric film has a
predetermined thickness and is formed by repeated cycles of a film
formation step of forming a piezoelectric thin film and a
crystallization heat treatment step of heat-treating the
piezoelectric thin film to effect crystallization.
Inventors: |
Nakashio; Eiji; (Miyagi,
JP) ; Honda; Junichi; (Miyagi, JP) ; Tamura;
Takashi; (Miyagi, JP) ; Suzuki; Koji; (Miyagi,
JP) ; Inaguma; Teruo; (Miyagi, JP) ; Aizawa;
Manabu; (Miyagi, JP) ; Takahashi; Kazuo;
(Miyagi, JP) ; Sakurai; Tadashi; (Miyagi,
JP) |
Correspondence
Address: |
SONNENSCHEIN NATH & ROSENTHAL LLP
P.O. BOX 061080, WACKER DRIVE STATION, SEARS TOWER
CHICAGO
IL
60606-1080
US
|
Assignee: |
SONY CORPORATION
Tokyo
JP
|
Family ID: |
36599295 |
Appl. No.: |
12/123109 |
Filed: |
May 19, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11367996 |
Mar 3, 2006 |
|
|
|
12123109 |
|
|
|
|
Current U.S.
Class: |
29/25.35 ;
29/846 |
Current CPC
Class: |
Y10T 29/42 20150115;
G01C 19/5663 20130101; Y10T 29/49155 20150115; H01L 41/316
20130101; H01L 41/094 20130101 |
Class at
Publication: |
29/25.35 ;
29/846 |
International
Class: |
H01L 41/22 20060101
H01L041/22 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 4, 2005 |
JP |
2005-061694 |
Mar 4, 2005 |
JP |
2005-061695 |
Mar 4, 2005 |
JP |
2005-061696 |
Jun 29, 2005 |
JP |
2005-190234 |
Dec 28, 2005 |
JP |
2005-378321 |
Claims
1. A method for manufacturing a piezoelectric element, the method
comprising the steps of: forming a first electrode film on a
substrate; forming a piezoelectric film on the first electrode
film; and forming a second electrode film on the piezoelectric
film, wherein the piezoelectric film has a predetermined thickness
and is formed by repeated cycles of film formation of forming a
piezoelectric thin film and crystallization heat treatment of
heat-treating the piezoelectric thin film to effect
crystallization.
2. The method for manufacturing a piezoelectric element according
to claim 1, wherein the thickness of piezoelectric thin film formed
per cycle is 350 nm or less.
3. The method for manufacturing a piezoelectric element according
to claim 1, wherein the crystallization heat treatment is conducted
within the range of 700.degree. C. or more and 800.degree. C. or
less.
4. The method for manufacturing a piezoelectric element according
to claim 1, wherein the film formation of the piezoelectric thin
film is conducted by a sputtering method in an oxygen gas
atmosphere.
5. The method for manufacturing a piezoelectric element according
to claim 4, wherein the oxygen gas atmosphere is an atmosphere of
mixed gas of an oxygen gas and an inert gas, and the partial
pressure of oxygen gas is 50% or more.
6. The method for manufacturing a piezoelectric element according
to claim 1, wherein the piezoelectric thin film comprises lead
zirconate titanate, and the lead content of a target for sputtering
is 1.02 or more and 1.1 or less relative to the total content of
titanium and zirconium of 1 on an atomic weight basis.
7. The method for manufacturing a piezoelectric element according
to claim 1, wherein the step of forming the first electrode film
includes the steps of: forming a titanium layer on the substrate;
and forming a platinum layer on the titanium layer.
8. The method for manufacturing a piezoelectric element according
to claim 7, wherein the film thickness of the titanium layer is
within the range of 5 nm or more and 20 nm or less.
9. The method for manufacturing a piezoelectric element according
to claim 1, the method further comprising the steps of: patterning
the second electrode film after forming the second electrode film;
patterning the piezoelectric film after the second electrode film
is patterned; and patterning the first electrode film after the
piezoelectric film is patterned.
10. The method for manufacturing a piezoelectric element according
to claim 9, wherein the patterning of the piezoelectric film is
conducted by a wet etching method.
11. The method for manufacturing a piezoelectric element according
to claim 1, wherein the formation and the patterning of a plurality
of the first electrode films, a plurality of the piezoelectric
films, and a plurality of the second electrode films are conducted
simultaneously on the substrate, and individual polarization
treatments of the plurality of piezoelectric films are conducted
simultaneously through wirings disposed on the substrate.
12. The method for manufacturing a piezoelectric element according
to claim 11, wherein the wirings are removed by dissolution after
the polarization treatments are conducted.
13. The method for manufacturing a piezoelectric element according
to claim 11, wherein the wirings are removed by grinding after the
polarization treatments are conducted.
14. The method for manufacturing a piezoelectric element according
to claim 11, wherein the ratio of the polarization treatment
temperature of the piezoelectric film to the Curie temperature of
the piezoelectric film is 0.2 or more.
15. The method for manufacturing a piezoelectric element according
to claim 11, wherein the first electrode film is connected to a
negative electrode and the second electrode film is connected to a
positive electrode in the polarization treatment of the
piezoelectric film.
Description
RELATED APPLICATION DATA
[0001] This application is a divisional of U.S. patent application
Ser. No. 11/367,996, filed Mar. 3, 2006, the entirety of which is
incorporated herein by reference to the extent permitted by law.
The present application also claims priority to Japanese Patent
Applications Numbered JP 2005-061694, JP 2005-061695, JP
2005-061696, JP 2005-190234, and JP 2005-378321 filed in the
Japanese Patent Office on Mar. 4, 2005, Mar. 4, 2005, Mar. 4, 2005,
Jun. 29, 2005, and Dec. 28, 2005, respectively, the entirety all of
which are incorporated by reference herein to the extent permitted
by law.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a piezoelectric element
including a piezoelectric film and a method for manufacturing the
same.
[0004] 2. Description of the Related Art
[0005] Piezoelectric elements have been previously used for
piezoelectric vibrators of actuators, sensors, and the like. In
general, piezoelectric elements in the related art have a structure
in which a first electrode film is disposed on a wafer, a
piezoelectric film is disposed on this first electrode film by a
sputtering method, a sol-gel method, or the like, and a second
electrode film is further disposed on the above-described
piezoelectric film (refer to Japanese Unexamined Patent Application
Publication No. 7-113643 and Japanese Unexamined Patent Application
Publication No. 10-19574, for example).
SUMMARY OF THE INVENTION
[0006] For this type of piezoelectric element, sometimes, it is
desired that the piezoelectric film formed on the first electrode
film is processed into a predetermined shape by patterning. A dry
etching method or a wet etching method may be used for processing
the piezoelectric film by patterning.
[0007] In general, a piezoelectric element exhibits a higher
piezoelectric characteristic as the thickness of the piezoelectric
film is increased. However, in the dry etching method, when the
thickness of the piezoelectric film is 1 .mu.m or more, the process
takes a long time, and the production time of the element is
increased. In the wet etching method, there is a problem in that
the yield tends to be decreased due to a portion being left
unetched.
[0008] For example, in the case where the piezoelectric film
consists of lead zirconate titanate (PZT), a mixed solution of
hydrofluoric acid and nitric acid, for example, is used as an
etching solution, and the piezoelectric film is etched by being
immersed in this etching solution for a few minutes.
[0009] However, in this process, a zirconium component of the
piezoelectric film tends to remain as a residue on a wafer, and can
cause an electrical short circuit with an electrode film, a wiring
layer, or the like, so that the wafer yield is decreased
significantly.
[0010] The present invention was made in consideration of the
above-described problems. There is a need for a piezoelectric
element capable of improving a productivity and a yield without
impairing the piezoelectric characteristic and a method for
manufacturing the same.
[0011] A piezoelectric element according to an embodiment of the
present invention is provided with a substrate, a first electrode
film disposed on the substrate, a piezoelectric film disposed on
the first electrode film, and a second electrode film disposed on
the piezoelectric film, wherein the above-described piezoelectric
film has a laminated structure composed of a plurality of
crystallized piezoelectric thin films.
[0012] For the piezoelectric element, in the past, a piezoelectric
film having a thickness suitable for attaining a desired
piezoelectric characteristic was formed in a single step and,
thereafter, a crystallization heat treatment (annealing treatment)
was conducted. However, when a piezoelectric film having a
thickness of 1 .mu.m or more, for example, is formed in a single
step, it is difficult to make the crystal orientation uniform in
the layer thickness direction with high precision even when the
annealing treatment is conducted. However, according to an
embodiment of the present invention, the crystallinity of the
piezoelectric film is enhanced by allowing the piezoelectric film
to have a laminated structure composed of crystallized
piezoelectric thin films. In this manner, the piezoelectric
characteristic may be improved and, in addition, the patterning
precision of the piezoelectric film by the wet etching method may
be improved, so that excellent productivity and an improved yield
may be achieved as compared with those obtained by the dry etching
method.
[0013] A method for manufacturing such a piezoelectric film
includes the steps of forming a first electrode film on a
substrate, forming a piezoelectric film on the first electrode
film, and forming a second electrode film on the piezoelectric
film, wherein the piezoelectric film having a predetermined
thickness is formed by repeated cycles of a film formation step of
forming a piezoelectric thin film and a crystallization heat
treatment step of heat-treating the piezoelectric thin film to
effect crystallization. In this manner, a piezoelectric film
exhibiting uniform crystallinity in the film thickness direction
may be produced.
[0014] It is desirable that the thickness of the piezoelectric thin
film per cycle of film formation is 350 nm or less. If the
thickness of the piezoelectric thin film exceeds 350 nm, inadequate
etching occurs due to reduction in the crystallinity, so that the
yield may be decreased. Therefore, when the piezoelectric film
having a film thickness of 1 .mu.m or more is formed, at least four
layers of piezoelectric thin films having a film thickness of 350
nm or less are laminated. Preferably, the temperature of the
crystallization heat treatment is in the range of 700.degree. C. or
more and 800.degree. C. or less.
[0015] The film formation of the piezoelectric thin film may be
conducted in an atmosphere of mixed gas of an oxygen gas and an
inert gas since the oxygen deficiency of the formed piezoelectric
thin film may be reduced and, thereby, a piezoelectric film
exhibiting an excellent piezoelectric characteristic may be
produced. Preferably, the partial pressure of oxygen gas is 50% or
more. It is further preferable that the film formation is conducted
in an pure oxygen gas atmosphere without introducing the inert
gas.
[0016] It is desirable that the piezoelectric thin film consists of
lead zirconate titanate (PZT) since an excellent piezoelectric
characteristic may be exhibited. Besides this, other perovskite
oxide based piezoelectric materials may be used. A sputtering
method may be used for forming the piezoelectric thin film.
[0017] On the other hand, it has been made clear that the crystal
orientation of the piezoelectric film is able to be controlled by
means of the film configuration of the first electrode film serving
as a substrate. According to an embodiment of the present
invention, the first electrode film is composed of a laminated film
of a Ti layer and a Pt layer and, furthermore, the thickness of the
Ti layer is in the range of 5 nm or more and 20 nm or less.
[0018] As described above, according to an embodiment of the
present invention, a piezoelectric film exhibiting high
crystallinity may be formed and, thereby, the processing of the
piezoelectric film by patterning may be conducted with high
precision. In this manner, a piezoelectric film exhibiting an
excellent piezoelectric characteristic may be produced with high
productivity.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] FIGS. 1A and 1B are schematic perspective views of a
vibration gyro sensor element explained in a first embodiment of
the present invention.
[0020] FIG. 2 is a schematic bottom view of the above-described
vibration gyro sensor element.
[0021] FIG. 3 is a block diagram showing the configuration of a
drive detection circuit of the above-described vibration gyro
sensor element.
[0022] FIG. 4 is a main step flow diagram for explaining a method
for manufacturing the above-described vibration gyro sensor
element.
[0023] FIGS. 5A and 5B are diagrams for explaining a step of
manufacturing the above-described vibration gyro sensor element.
FIG. 5A is a plan view of a single crystal silicon substrate, and
FIG. 5B is a sectional view of the section indicated by a line
VB-VB shown in FIG. 5A.
[0024] FIGS. 6A and 6B are diagrams showing the state in which a
resist pattern film is disposed on the above-described substrate.
FIG. 6A is a plan view, and FIG. 6B is a sectional view of the
section indicated by a line VIB-VIB shown in FIG. 6A.
[0025] FIGS. 7A and 7B are diagrams showing the state in which a
thermal oxidation film of the above-described substrate has been
removed. FIG. 7A is a plan view, and FIG. 7B is a sectional view of
the section indicated by a line VIIB-VIIB shown in FIG. 7A.
[0026] FIGS. 8A and 8B are diagrams showing the state in which
anisotropic etching is applied to the above-described substrate.
FIG. 8A is a plan view, and FIG. 8B is a sectional view of the
section indicated by a line VIIIB-VIIIB shown in FIG. 8A.
[0027] FIG. 9 is a magnified view of the portion W of the
above-described substrate shown in FIG. 8.
[0028] FIGS. 10A and 10B are magnified views showing the state of
the above-described substrate provided with a lower electrode film,
a piezoelectric film, and an upper electrode film. FIG. 10A is a
plan view, and FIG. 10B is a sectional view of the section
indicated by a line XB-XB shown in FIG. 10A.
[0029] FIGS. 11A and 11B are diagrams showing the relationship
between the unit layer film thickness of the piezoelectric thin
films constituting the above-described piezoelectric film and the
percentage of non-defective products.
[0030] FIG. 12 is a diagram showing the relationship between the
annealing temperature of the piezoelectric film and the X-ray
diffraction intensity.
[0031] FIG. 13 is a diagram showing the relationship between the
thickness of the piezoelectric film and the substrate back surface
temperature.
[0032] FIG. 14 is a diagram showing the relationship between the
annealing temperature of the piezoelectric film and the yield.
[0033] FIGS. 15A and 15B are magnified views showing the state of
the above-described substrate provided with a driving electrode and
detection electrodes. FIG. 15A is a plan view, and FIG. 15B is a
sectional view of the section indicated by a line XVB-XVB shown in
FIG. 15A.
[0034] FIGS. 16A and 16B are magnified views showing the state of
the above-described substrate provided with a piezoelectric film.
FIG. 16A is a plan view, and FIG. 16B is a sectional view of the
section indicated by a line XVIB-XVIB shown in FIG. 16A.
[0035] FIG. 17 is a diagram showing the relationship between the
thickness of a Ti layer and the piezoelectric displacement.
[0036] FIG. 18 is a diagram showing the relationship between the
thickness of a Ti layer and the percentage of non-defective
products.
[0037] FIGS. 19A and 19B are magnified views showing the state of
the above-described substrate provided with a lower electrode film.
FIG. 19A is a plan view, and FIG. 19B is a sectional view of the
section indicated by a line XIXB-XIXB shown in FIG. 19A.
[0038] FIG. 20 is a magnified plan view showing the state of the
above-described substrate provided with a wiring substrate
film.
[0039] FIG. 21 is a sectional view of the section indicated by a
line XXI-XXI shown in FIG. 20.
[0040] FIG. 22 is a magnified plan view showing the state of the
above-described substrate provided with a planarizing resist
film.
[0041] FIG. 23 is a sectional view of the section indicated by a
line XXIII-XXIII shown in FIG. 22.
[0042] FIG. 24 is a magnified plan view showing the state of the
above-described substrate provided with wiring connection
terminals.
[0043] FIG. 25 is a sectional view of the section indicated by a
line XXV-XXV shown in FIG. 24.
[0044] FIG. 26 is a plan view showing the entire state of the
above-described substrate provided with polarization rails.
[0045] FIG. 27 is a magnified plan view showing the state of the
above-described substrate provided with an insulating protective
film.
[0046] FIG. 28 is a sectional view of the section indicated by a
line XXVIII-XXVIII shown in FIG. 27.
[0047] FIG. 29 is a magnified plan view showing the state of the
above-described substrate provided with Cu wirings.
[0048] FIG. 30 is a sectional view of the section indicated by a
line XXX-XXX shown in FIG. 29.
[0049] FIG. 31 is a plan view of the above-described substrate
provided with Cu wirings, in its entirety.
[0050] FIG. 32 is a sectional view of the above-described substrate
showing the state in which a back surface stopper film is disposed
on the above-described substrate.
[0051] FIG. 33 is a magnified plan view showing the state of the
above-described substrate provided with a vibration beam by
providing a beam space.
[0052] FIG. 34 is a sectional view of the section indicated by a
line XXXIV-XXXIV shown in FIG. 33.
[0053] FIG. 35 is a sectional view of the section indicated by a
line XXXV-XXXV shown in FIG. 33.
[0054] FIG. 36 is a magnified plan view showing the state of the
above-described substrate from which the stopper layer has been
removed.
[0055] FIG. 37 is a sectional view of the section indicated by a
line XXXVII-XXXVII shown in FIG. 36.
[0056] FIG. 38 is a sectional view of the section indicated by a
line XXXVIII-XXXVIII shown in FIG. 36.
[0057] FIGS. 39A and 39B are diagrams showing a step of applying a
polarization treatment to stabilize the piezoelectric
characteristic. FIG. 39A is a plan view of the entire substrate,
and FIG. 39B is a magnified plan view showing the state of the
above-described substrate.
[0058] FIGS. 40A and 40B are diagrams showing the state in which
unnecessary Cu wirings have been removed after the polarization
treatment. FIG. 40A is a plan view of the entire substrate, and
FIG. 40B is a magnified plan view showing the state of the
above-described substrate.
[0059] FIGS. 41A and 41B are diagrams showing the state in which Au
bumps to enable flip chip mounting are formed. FIG. 41A is a plan
view of the entire substrate, and FIG. 41B is a magnified plan view
showing the state of the above-described substrate.
[0060] FIGS. 42A and 42B are diagrams showing the cutting lines to
divide into individual vibration gyro sensor elements formed as
piezoelectric thin film sensors. FIG. 41A is a plan view of the
entire substrate, and FIG. 41B is a magnified plan view showing the
state of the above-described substrate.
[0061] FIG. 43 is a plan view of a vibration gyro sensor element
formed as a piezoelectric thin film sensor.
[0062] FIG. 44 is a schematic perspective view showing the state in
which vibration gyro sensor elements are mounted on an IC
substrate.
[0063] FIG. 45 is a plan view showing the state in which a cover
component is disposed on an angular velocity sensor provided with a
vibration gyro sensor element.
[0064] FIG. 46 is a time chart for explaining the high-temperature
polarization treatment temperature of a piezoelectric film and the
voltage application period, explained in a second embodiment of the
present invention.
[0065] FIG. 47 is a diagram showing the relationship between the
applied voltage and the detection signal voltage in the
above-described polarization treatment.
[0066] FIG. 48 is a diagram showing the relationship between the
temperature at which the application of voltage is started and the
detection signal voltage in the above-described polarization
treatment.
[0067] FIG. 49 is a diagram showing the relationship between the
temperature at which the application of voltage is interrupted and
the detection signal voltage after reflow.
[0068] FIG. 50 is a diagram showing the results of measurement of
the attenuation factor of the detection signal when a high
temperature is applied again after the polarization treatment.
[0069] FIG. 51 is a diagram showing the hysteresis loop of the
piezoelectric after a high-temperature polarization treatment,
explained in a third embodiment of the present invention.
[0070] FIGS. 52A and 52B are diagrams showing an example of the
relationship between the coercive electric field and the
polarization temperature of a piezoelectric subjected to a
high-temperature polarization treatment.
[0071] FIG. 53 is a diagram showing an example of the relationship
between the amount of shift of the coercive electric field and the
piezoelectric characteristic of a piezoelectric subjected to a
high-temperature polarization treatment.
[0072] FIGS. 54A and 54B are side views showing polarization
directions of a piezoelectric film of a vibration gyro sensor
element explained in a fourth embodiment of the present
invention.
[0073] FIGS. 55A and 55B are side views for explaining warp
directions of a vibrator when a voltage is applied to a vibration
gyro sensor element.
[0074] FIG. 56 is a diagram showing an experimental result for
explaining the detection sensitivity characteristics depending on
the difference in the polarization direction.
[0075] FIG. 57 is a diagram showing an experimental result for
explaining the time-lapse change of the output depending on the
difference in the polarization direction.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0076] The embodiments according to the present invention will be
described below with reference to drawings. As a matter of course,
the present invention is not limited to the following embodiments,
and various modifications can be made based on the technical idea
of the present invention.
First Embodiment
[0077] FIGS. 1A and 1B show a vibration gyro sensor element 100
serving as a piezoelectric element according to an embodiment of
the present invention. FIG. 1A is a perspective external view of
the entire vibration gyro sensor element 100, and FIG. 1B is a
magnified perspective view of a vibrator 110 separate from the
vibration gyro sensor element 100. As shown in FIGS. 1A and 1B, the
vibration gyro sensor element 100 is provided with a so-called
cantilever-shaped vibrator 110 cut from a silicon single crystal
substrate. The vibrator 110 is formed into the shape of a
quadrangular prism having a cross section in the shape of a
rectangle when cut in a plane perpendicular to a longitudinal
direction.
[0078] For the approximate size of the vibration gyro sensor
element 100, the element thickness t1 is 300 .mu.m, the element
length t2 is 3 mm, and the element width t3 is 1 mm. For the size
of a vibration beam, that is, the vibrator 110 that actually
vibrates, the vibration beam thickness t4 is specified to be 100
.mu.m, the vibration beam length t5 is specified to be 2.5 mm, and
the vibration beam width t6 is specified to be 100 .mu.m. When the
vibration beam of this shape is vibrated, the resonant frequency is
about 40 kHz. The above-described values are shown as one example,
and it is possible to set them optimally depending on the frequency
to be used and the size of a target element.
[0079] The vibration gyro sensor element 100 is mounted on an IC
substrate, although not shown in the drawing, and is used. The
mounting surface (bottom surface) of the element 100 on the side
facing the IC substrate is shown in FIG. 2.
[0080] A reference electrode 104a and a piezoelectric film 105a are
laminated sequentially on the surface of the vibrator 110. A
driving electrode 106a and a pair of detection electrodes 106b and
106c are disposed on the piezoelectric film 105a discretely and
parallel to each other along a longitudinal direction of the
vibrator 110. The driving electrode 106a, detection electrodes 106b
and 106c, and reference electrode 104a are provided with wiring
connection terminals 101A, 101B, 101C, and 101D, respectively.
[0081] The piezoelectric film 105a is a piezoelectric film composed
of a piezoelectric ceramic material, e.g., lead zirconate titanate
(PZT), or piezoelectric single crystal, e.g., quartz or
LaTaO.sub.3. The reference electrode 104a, the driving electrode
106a and the detection electrodes 106b and 106c are composed of a
metal electrode, an electrically conductive oxide electrode, or the
like. The reference electrode 104a corresponds to "a first
electrode film" in the present invention, and the driving electrode
106a, and detection electrodes 106b and 106c correspond to "a
second electrode film" in the present invention.
[0082] The vibration gyro sensor element 100 is operated by being
connected to an IC circuit 40 shown in FIG. 3, and functions as an
angular velocity sensor (vibration gyro sensor) to detect a
Coriolis force generated in accordance with an angular velocity.
The IC circuit 40 is composed of IC circuit elements and other
electronic components installed simultaneously on an IC substrate,
on which the vibration gyro sensor element 100 is mounted.
[0083] The IC circuit 40 is provided with a summing circuit 41, an
amplifying circuit 42, a phase-shift circuit 43, an auto gain
controller (AGC) 44, a differential amplifying circuit 45, a
synchronous detector circuit 46, and a smoothing circuit 47.
[0084] Each of the pair of detection electrodes 106b and 106c of
the vibration gyro sensor element 100 is connected to the summing
circuit 41 and the differential amplifying circuit 45. The driving
electrode 106a of the vibration gyro sensor element 100 is
connected to an output terminal of the AGC 44.
[0085] In the angular velocity sensor, a so-called phase-shift
oscillation circuit is constituted by the summing circuit 41, the
amplifying circuit 42, the phase-shift circuit 43, the AGC 44, and
the vibration gyro sensor element 100. A voltage is applied between
the reference electrode 104a and the driving electrode 106a of the
vibration gyro sensor element 100 by the phase-shift oscillation
circuit, so that the vibrator 110 is vibrated through
self-excitation. The vibration direction of the vibrator 110 is a
thickness direction of the vibrator 110.
[0086] In the angular velocity sensor, the pair of detection
electrodes 106b and 106c are connected to the summing circuit 41
and the differential amplifying circuit 45, the output terminal of
the differential amplifying circuit 45 is connected to the
synchronous detector circuit 46, and the synchronous detector
circuit 46 is connected to the smoothing circuit 47. These
components and the piezoelectric film 105a function as a detection
unit to detect the angular velocity of the vibrator 110.
[0087] That is, when an angular velocity is generated around the
longitudinal direction of the vibrator 110 of the vibration gyro
sensor element 100 while the vibrator 110 is vibrated through
self-excitation by the above-described phase-shift oscillation
circuit, the vibration direction of the vibrator 110 is changed by
the Coriolis force. In this case, the output of one of the
detection electrodes 106b and 106c is increased, and the output of
the other is decreased. The change in the amount of any one output
or both outputs is detected and measured by the IC circuit 40, so
that the input angular velocity around the longitudinal direction
of the vibrator 110 is detected.
[0088] A manufacturing example of the vibration gyro sensor element
100 of the present embodiment having the above-described
configuration will be described below. FIG. 4 shows a main step
flow for explaining a method for manufacturing the vibration gyro
sensor element 100.
[0089] Substrate Preparation Step
[0090] A Si substrate 1 as shown in FIGS. 5A and 5B is prepared.
The size of the substrate 1 is set optimally in accordance with the
type of thin film process utilized. In the present embodiment, a
wafer having a diameter of 4 inches is used. The thickness of the
substrate 1 is determined on the basis of the operability and the
cost, but it is desirable that the thickness becomes larger than or
equal to the thickness of the vibrator finally. In the present
embodiment, the thickness is specified to be 300 .mu.m.
[0091] Thermal oxidation films (SiO.sub.2 films) 2A and 2B serving
as protective masks in anisotropic wet etching are formed on either
surface of the Si substrate 1. The thicknesses of the thermal
oxidation films are set at will, and are specified to be about 0.3
.mu.m in the present embodiment. An N type is adopted for the Si
substrate 1, although it can also be selected at will. The
substrate is cut in such a way that, with respect to the oriented
surface of the Si substrate 1, a substrate wide-mouthed surface
shown in FIG. 5A becomes a (100) orientated surface, and a surface
shown in FIG. 5B, which is a cross section of the substrate 1,
becomes a (110) surface.
[0092] Diaphragm Formation Step
[0093] As shown in FIGS. 6A and 6B, in order to remove a part of
the thermal oxidation film 2B on a back surface of the substrate 1,
a resist pattern film 3 having an opening portion corresponding to
the part to be removed is formed. A photolithography technology
used in a usual semiconductor thin film formation process is used
as a method for forming the resist pattern film 3. For example,
OFPR-8600 produced by TOKYO OHKA KOGYO CO., LTD., is used as the
resist material, although the type is not limited to this. The
photolithography step is a technology of resist material
application, prebaking, exposure, and development, which is widely
used in a thin film formation step, and therefore, a detailed
explanation will not be provided here. Although the
photolithography technology is also used in the following process,
detailed explanations of general steps will not be provided except
for special methods for application.
[0094] Each of the opening portions shown in FIG. 6A corresponds to
one element. The shape of the opening portion is determined on the
basis of the final shape of the beam, the thickness of the
substrate 1, and the etching width (indicated by reference numeral
t7 shown in FIG. 34 and FIG. 35) in the formation of the beam shape
(vibrator 110). The etching width t7, as described below, is
specified to be 200 .mu.m here.
[0095] With respect to the width direction of the opening portion
(diaphragm width t9), the necessary width is, first of all, the
vibration beam width t6+the etching width t7.times.2 (left and
right sides). Furthermore, in the case where the thickness of the
substrate 1 is 300 .mu.m, the thickness of the vibration beam is
100 .mu.m, and the substrate thickness of 300 .mu.m is cut to the
vibration beam thickness of 100 .mu.m by a wet etching method, as
described below, the diaphragm depth t10 is 200 .mu.m and cutting
is conducted at an angle of .theta.1=55.degree., as shown in FIG.
9. Therefore, the width corresponding thereto: t10.times.1/tan
55.degree.=140 .mu.m is added to the left and right sides.
Consequently, the diaphragm width
t9=t6+t7.times.2+140.times.2=100+200.times.2+140.times.2=780 .mu.m
holds. Likewise, the diaphragm length t8=vibration beam length
t5+beam spacing t7+140.times.2=2,500+200+140.times.2=2,980 .mu.m
holds.
[0096] As shown in FIGS. 7A and 7B, the parts of a thermal
oxidation film 2B, the parts corresponding to the above-described
opening portions, are removed. The method for removal may be any
one of physical etching, e.g., ion etching, and wet etching.
However, the wet etching is desirable in consideration of the
smoothness of an interface of the substrate 1 since only the
thermal oxidation film 2B is removed. In the present embodiment,
ammonium fluoride is used as a chemical solution for the wet
etching. However, with respect to the wet etching, if the etching
is conducted for a long time, the occurrence of so-called side
etching is increased where etching proceeds from a side surface of
the opening portion and, therefore, it is desirable that the
etching is terminated at the point in time when only the thermal
oxidation film 2B corresponding to the opening portions are
removed.
[0097] As shown in FIGS. 8A and 8B and FIG. 9, wet etching is
applied to the substrate 1 exposed at the opening portions, so that
the thickness of the substrate 1 corresponding to the opening
portions is cut until a desired vibration beam thickness t4 is
reached. In the present embodiment, a 20% solution of
tetramethylammonium hydroxide (TMAH) is used for etching the
substrate 1 consisting of Si. At this time, the solution
temperature is maintained at 80.degree. C., and immersion etching
is conducted.
[0098] FIG. 9 is a magnified view of the portion W shown in FIG. 8.
Etching is conducted under the above-described condition for about
6 hours in such a way that the amount of etching (diaphragm depth)
t10 becomes 200 .mu.m. With respect to the shape of the substrate 1
corresponding to the opening portion, edge portions are formed by
this etching with a wet etching angle .theta.1 (=55.degree.), as
shown in FIG. 9. Alternatively, potassium hydroxide (KOH),
ethylenediamine-pyrocatechol-water (EDP) solution, or the like
other than TMAH may be used as the wet etching chemical solution.
However, in the present embodiment, TMAH is adopted since the
selection ratio of etching rate relative to the thermal oxidation
films 2A and 2B is further increased.
[0099] In the present embodiment, wet etching, which takes
advantage of the feature of Si, is adopted to cut the substrate
until the vibration beam thickness is reached. However, the cutting
method is selected at will, and is not limited to this method.
[0100] A diaphragm is formed in the above-described opening portion
by the above-described method. The diaphragm thickness t11 left
after the wet etching becomes equal to the vibration beam thickness
t4 finally.
[0101] In the following description, one element indicated by W
shown in FIGS. 8A and 8B will be described under magnification. In
the drawings, the dimension ratio may be different from the actual
dimension ratio for the sake of clarity of explanation. Hereafter,
explanation will be made in which the diaphragm formed as described
above is in the position with the opening portion and the thermal
oxidation film 2B down, as shown in FIGS. 10A and 10B.
[0102] Electrode Film Formation Step
[0103] As shown in FIGS. 10A and 10B, a lower electrode film 4, a
piezoelectric film 5, and an upper electrode film 6 are formed. The
lower electrode film 4 corresponds to "a first electrode film", and
the upper electrode film 6 corresponds to "a second electrode
film". The lower electrode film 4 is specified to be a laminated
film composed of a titanium (Ti) film (film thickness 20 nm)
serving as a substrate film and a platinum (Pt) film (film
thickness 100 nm) formed on the Ti film in order to improve the
characteristics of the piezoelectric film. A film of metal, e.g.,
Au, rhodium (Rh), or rhenium (Re), other than Pt is applicable, and
tantalum (Ta) or the like other than Ti is also applicable.
[0104] In the formation step of the lower electrode film 4, a Ti
film of 20 nm thickness is formed by a magnetron sputtering
apparatus, and a Pt film of 100 nm is formed on the above-described
Ti film. Films of Ti and Pt are formed at a gas pressure of 0.5 Pa
and at radio frequency (RF) powers of 1 kW and 0.5 kW,
respectively. A Pt film is used as a substrate film of lead
zirconate titanate, and the Ti film is formed to increase the
adhesion therebetween.
[0105] The piezoelectric film 5 is formed. In the formation step of
the piezoelectric film 5, a piezoelectric film of 1.4 .mu.m
thickness is formed with a magnetron sputtering apparatus by using
an oxide target of Pb1.02(Zr.sub.0.53Ti0.47)O3 under the condition
of ambient temperature, an oxygen gas pressure of 0.2 to 3 Pa, and
an RF power of 0.1 to 5 kW. The method for forming the
piezoelectric film 5 will be described below in detail.
[0106] In the formation step of the upper electrode film 6, a Pt
film of 200 nm thickness is formed on a surface of the
piezoelectric film 5 formed as described above. The above-described
Pt film is formed with a magnetron sputtering apparatus under the
condition of a gas pressure of 0.5 Pa and an RF power of 0.5
kW.
[0107] Method for Forming Piezoelectric Film
[0108] In the method for forming the piezoelectric film 5 of the
present embodiment, a film formation step of forming a
piezoelectric thin film consisting of lead zirconate titanate and
having a layer thickness smaller than the thickness of the
piezoelectric film 5 to be formed and a crystallization heat
treatment (annealing) step of heat-treating the piezoelectric thin
film to effect crystallization are conducted a plurality of times
and, thereby, the piezoelectric film 5 having a predetermined
thickness is formed. In this manner, the piezoelectric film 5
exhibiting the uniform crystallinity in the layer thickness
direction is produced.
[0109] In the film formation step, the number of laminations of the
piezoelectric thin film is specified to be seven, and the unit
layer thickness is specified to be 200 nm. In the crystallization
heat treatment step, an electric furnace is used, and the step is
conducted in an oxygen atmosphere at a temperature in the range of
700.degree. C. or more and 800.degree. C. or less for 30
minutes.
[0110] With respect to a known piezoelectric element, a
piezoelectric film having a thickness suitable for attaining a
desired piezoelectric characteristic is formed in a single step
and, thereafter, an annealing treatment is conducted. However, when
a piezoelectric film having a thickness of 1 .mu.m or more, for
example, is formed in a single step, it is difficult to make the
crystal orientation of the piezoelectric film uniform in the layer
thickness direction even when the annealing treatment is conducted.
Consequently, in the above-described embodiment of the present
invention, the crystallinity of the piezoelectric film 5 is
enhanced by forming the piezoelectric film 5 through lamination of
a plurality of crystallized piezoelectric thin films. In this
manner, the piezoelectric characteristic may be improved and, in
addition, the yield may be improved by increasing the patterning
precision in the processing step of the piezoelectric film 5, as
described below.
[0111] FIG. 11A shows an experimental result indicating the
percentage of non-defective products (wafer yield) with change in
the film thickness per unit layer of the piezoelectric thin film in
the case where the total lamination thickness of piezoelectric thin
films (lead zirconate titanate) is specified to be 1.4 .mu.m. FIG.
11B shows the relationship between the unit layer film thickness
and the percentage of non-defective products at each point shown in
FIG. 11A. Here, the deterioration of the percentage of
non-defective products results from the deterioration of the
piezoelectric characteristic. It is clear that the percentage of
non-defective products is increased as the film thickness per
application of the piezoelectric thin film is decreased (for
example, 100 nm.times.14 times, 200 nm.times.7 times). When the
film thickness of the piezoelectric thin film exceeds 350 nm, at
which the number of laminations is four, the percentage of
non-defective products is decreased significantly. Therefore, it is
desirable that the unit layer film thickness of lamination of the
piezoelectric thin film is 350 nm or less.
[0112] The total lamination thickness of piezoelectric thin films
is not limited to that in the above-described example. In the case
where the film thickness per unit layer is 350 nm, three layers are
laminated when the total lamination thickness of the piezoelectric
film is 1 .mu.m, and two layers are laminated when the total
lamination thickness is 700 nm.
[0113] On the other hand, the oxygen deficiency tends to occur in
the film formation of lead zirconate titanate. If the amount of
oxygen taken into the film is small, the insulating property may be
deteriorated and a favorable piezoelectric characteristic may not
be exhibited. Therefore, in the present embodiment, the
piezoelectric thin film consisting of lead zirconate titanate is
formed in an oxygen gas atmosphere. Here, the oxygen gas atmosphere
refers to an atmosphere of a mixed gas of an oxygen gas and an
inert gas (argon or the like) or an atmosphere of a pure oxygen
gas.
[0114] Table 1 shows the vibration amplitudes of vibrators
including their respective piezoelectric films formed by changing
the mixing ratio of oxygen and argon under the film formation
condition of lead zirconate titanate. A larger value of amplitude
indicates a more favorable piezoelectric characteristic, and a
vibrator exhibiting the magnitude of amplitude of 35 .mu.m or more
is evaluated as a sample at the level of a non-defective product.
In general, the detection sensitivity to the Coriolis force becomes
better as the mass of the vibrator or the amplitude of the vibrator
is increased. For the vibration gyro sensor element 100 having the
above-described element shape or element dimension of the present
embodiment, since there is a limit of increase in mass, the
amplitude is set at a large value and, thereby, predetermined
detection sensitivity is ensured. In this example, a lower limit of
the amplitude to ensure a predetermined detection sensitivity is
set at 35 .mu.m.
TABLE-US-00001 TABLE 1 Film formation condition Amplitude (.mu.m)
Film formation in 100% oxygen 52 Film formation in 95% oxygen and
5% argon 50 Film formation in 90% oxygen and 10% argon 50 Film
formation in Ar/50% oxygen 35 Film formation in Ar/15% oxygen
15
[0115] As a result, it becomes possible to produce a piezoelectric
element capable of exhibiting a desired vibration characteristic at
an oxygen gas partial pressure of 50% or more. In particular, a
more favorable vibration characteristic may be exhibited as the
oxygen gas partial pressure is increased.
[0116] A Pb content in a target is important for the film formation
of the piezoelectric thin film in an atmosphere of 100% oxygen gas.
As is clear from Table 2, when the amount of Pb is 1.01 relative to
Zr/Ti, the resulting piezoelectric film is not a perovskite phase
exhibiting a piezoelectric characteristic, but a pyrochlore phase
is deposited, so that the piezoelectric characteristic is
deteriorated.
TABLE-US-00002 TABLE 2 Presence or absence of Pb content pyrochlore
phase 1.1 absence 1.02 absence 1.01 presence 1 presence
[0117] Furthermore, as shown in Table 3, when a target containing
an excessive amount of Pb of 1.2 or more is used, the value of
dielectric loss, which indicates the insulating property, is
increased. This is because the film structure of lead zirconate
titanate becomes sparse.
TABLE-US-00003 TABLE 3 Pb content Dielectric loss 1.3 0.25 1.2 0.2
1.1 0.1 1 0.09
[0118] FIG. 12 shows the measurement result of the X-ray
diffraction intensity of the (111) surface of a perovskite phase of
a piezoelectric thin film (lead zirconate titanate) where the
annealing temperature is changed. The X-ray diffraction intensity
indicates the peak intensity of the X-ray diffraction pattern. The
amount of change in diffraction intensity becomes small in the
vicinity of an annealing temperature of 700.degree. C. This refers
to the fact that the crystallization of the piezoelectric thin film
reaches substantially saturation at the annealing temperature of
700.degree. C. or more. The diffraction intensity is increased
again at 750.degree. C. or more. This indicates that the
crystallinity of the piezoelectric thin film is influenced by the
development of crystallization of a Pt layer (lower electrode film)
serving as a substrate.
[0119] FIG. 13 shows the relationship between the change in film
thickness of the piezoelectric thin film and the substrate back
surface temperature in crystallization annealing. A dotted line
indicates a set value (780.degree. C.) of a thermocouple for
controlling the temperature of the substrate surface. The
temperature of the substrate back surface is varied depending on
the film thickness of lead zirconate titanate on the substrate
surface. This is because the color of lead zirconate titanate on
the surface is varied depending on the film thickness and the
infrared absorptivity is varied. Therefore, an actual annealing
temperature is varied when piezoelectric films having different
film thicknesses are formed. Consequently, in the present
embodiment, the temperature is controlled by using the temperature
of the substrate back surface in the above-described
crystallization annealing treatment.
[0120] FIG. 14 shows the percentage of non-defective products
(wafer yield) when the annealing temperature is changed. Here, the
percentage of non-defective products refers to a proportion of
elements having a predetermined piezoelectric characteristic among
a plurality of elements produced from one wafer. When the annealing
temperature is 700.degree. C. or less, the percentage of
non-defective products is deteriorated. The reason for this is
believed that the piezoelectric characteristic is deteriorated
since the crystallization of lead zirconate titanate is inadequate.
Conversely, the percentage of non-defective products tends to be
deteriorated at an annealing temperature in the vicinity of
800.degree. C. Although this may be because of deposition of a
pyrochlore phase, it is also believed that some portions are left
unetched in the piezoelectric film and, thereby, the percentage of
non-defective products is deteriorated. As is clear from the result
shown in FIG. 14, an optimum range of the annealing temperature is
700.degree. C. or more and 800.degree. C. or less, a preferable
range is 700.degree. C. or more and 750.degree. C. or less, and a
further preferable range is 725.degree. C. or more and 750.degree.
C. or less.
[0121] As described above, preferably, the annealing temperature of
lead zirconate titanate is in the range of 700.degree. C. or more
and 800.degree. C. or less. Preferably, the annealing treatment is
conducted in an oxygen gas atmosphere.
[0122] Electrode Film Processing Step
[0123] As shown in FIGS. 15A and 15B, the formed upper electrode
film 6 is processed into a predetermined shape. The upper electrode
film 6 is divided into three parts, as shown in FIG. 15A. The
center thereof is a driving electrode 6a for generating a power for
driving a vibration beam, and detection electrodes 6b and 6c for
detecting the Coriolis force are disposed on the left and right
sides thereof. The center of the driving electrode in the width
direction aligns with the center of the vibration beam, and the
left and right detection electrodes are formed symmetrically.
Wiring connection portions are disposed at the ends of linear
portions of the upper electrode film 6.
[0124] In the present embodiment, the driving electrode width t13
is specified to be 50 .mu.m, the detection electrode width t14 is
specified to be 10 .mu.m, the upper electrode length t12 is
specified to be 2 mm, and the spacings between the driving
electrode 6a and the detection electrodes 6b and 6c are specified
to be 5 .mu.m. These dimensions are specified at will, but the
dimensions are adjusted within the range of a final size of the
vibration beam. The shapes of portions connected to wiring patterns
described below are determined at will. In the present embodiment,
the connection portion width t16 is specified to be 50 .mu.m, and
the connection portion length t15 is specified to be 50 .mu.m.
[0125] For the method for processing the upper electrode film 6, a
desired resist pattern film is formed by using a photolithography
technology and, thereafter, unnecessary portions are removed from
the upper electrode film 6 by ion etching. The method for
processing the upper electrode film 6 is not specifically
limited.
[0126] As shown in FIGS. 16A and 16B, the piezoelectric film 5 is
processed into a predetermined shape. The shape is determined at
will as long as the piezoelectric film 5 has a shape that covers
the upper electrode film 6 completely. In the present embodiment,
the piezoelectric film length t17 is specified to be 2.2 mm, and
the piezoelectric film width t18 is specified to be 90 .mu.m. Here,
the center of the piezoelectric film in the width direction is
allowed to align with the center of the vibration beam. It is
desirable that the piezoelectric film width t18 is smaller than or
equal to the vibration beam width t4. The piezoelectric film 5 is
processed to have a width of 5 .mu.m from the outer perimeter of
the upper electrode film 6. This width is set at will on the basis
of the shape and the size of the entire element.
[0127] In the present embodiment, the Pt film is used as the
substrate film (lower electrode film) of lead zirconate titanate,
as described above. The Ti film is formed for the purpose of
enhancing the adhesion between the Pt film and the silicon
substrate. Here, an aging test of the piezoelectric element is
conducted by using a clean oven at 260.degree. C. (for 10 minutes)
where the film thickness of the Ti film is changed. As is clear
from the result shown in FIG. 17, the change in piezoelectric
displacement between before and after the aging test becomes
smaller as the Ti film thickness is decreased. Therefore, the
piezoelectric element becomes insensitive to the temperature change
of a use environment, and a piezoelectric element exhibiting a high
degree of reliability in the use at high temperatures as well may
be produced.
[0128] FIG. 17 shows the relationship between the Ti film thickness
and the piezoelectric displacement of the element. As shown in FIG.
17, when the film thickness of the Ti layer exceeds 50 nm, the
piezoelectric displacement is decreased sharply. FIG. 18 shows the
relationship between the film thickness of the Ti layer and the
percentage of non-defective products (wafer yield). When the film
thickness of the Ti layer is within the range of 5 nm or more and
20 nm or less, a high percentage of non-defective products is
exhibited. The reason for this is believed to be that the crystal
orientation of the piezoelectric film is enhanced by forming the Ti
layer within the above-described range and, therefore, patterning
processing by etching can be conducted with a high precision.
[0129] On the other hand, the reason the yield is decreased when
the film thickness of the Ti layer is less than 5 nm or more than
20 nm is believed to be that the crystal orientation of the
piezoelectric film is reduced and, therefore, a Zr component of
lead zirconate titanate is left unetched. As a result, the portion
being left unetched may function as a cover agent (mask) during
etching of the lower electrode film, and an electrode pattern may
not be formed into a desired shape, so that a short circuit may
occur between the electrodes.
[0130] For the method for processing the piezoelectric film 5, a
resist pattern film in the shape of a piezoelectric portion is
formed by using a photolithography technology and, thereafter, in
the present embodiment, removal is conducted by wet etching with
fluoro-nitric acid solution. The removal method is determined at
will, and a physical removal method by ion etching and a chemical
removal method by reactive ion etching (RIE) may be suggested.
[0131] As shown in FIGS. 19A and 19B, the lower electrode film 4 is
processed into a predetermined shape. The shape is determined at
will as long as the lower electrode film 4 has a shape that covers
the piezoelectric film 5 completely. In the present embodiment, the
lower electrode length t19 is specified to be 2.3 mm, and the lower
electrode width t20 is specified to be 94 .mu.m. Here, the center
of the lower electrode in the width direction is allowed to align
with the center of the vibration beam. It is desirable that the
lower electrode width t20 is smaller than or equal to the vibration
beam width t4. The lower electrode film 4 is processed to have a
width of 5 .mu.m from the outer perimeter of the piezoelectric film
5. This width is set at will on the basis of the shape and the size
of the entire element. As shown in FIG. 19A, a lower electrode
connection portion 4A is disposed in order to electrically connect
the lower electrode film 4 to the outside. Since it is desirable
that the lower electrode connection portion 4A ensures an area
suitable for being drawn out by a wiring pattern in the following
step, the lower electrode connection portion length t21 is
specified to be 200 .mu.m, and the lower electrode connection
portion width t22 is specified to be 100 .mu.m.
[0132] For the method for processing the above-described lower
electrode film 4, a resist pattern film in the shape of the lower
electrode portion is formed by using a photolithography technology
and, thereafter, unnecessary portions are removed by ion etching.
This processing method is also determined at will, and is not
limited to the ion etching.
[0133] Wiring Film Formation Step
[0134] As shown in FIG. 20 and FIG. 21, a wiring substrate film 7
is formed. The purpose of this is to ensure the adhesion of a
wiring film 9 described below. It is a precondition that the wiring
substrate film 7 consists of an insulating material. The shape of
the wiring substrate film 7 is determined at will as long as the
film is formed on a portion other than the portions on the vibrator
and individual electrode connection portions 6a, 6b, and 6c and on
an etching area around the vibrator. In the present embodiment,
each of the upper electrode film 6 and the lower electrode film 4
is allowed to overlap the wiring substrate film 7 by 5 .mu.m in
order that the adhesion of the electrode films may also be
improved.
[0135] For the method for forming the wiring substrate film 7, a
technique of so-called lift off is used, wherein a resist pattern
film having an opening portion in a desired shape is formed by the
photolithography technology, the wiring electrode film is formed by
sputtering and, thereafter, sputtered films adhered to unnecessary
portions are removed at the same time with the removal of the
resist pattern film. Alumina is selected as a material, and is
deposited to a thickness of 75 nm. However, the material and the
method for forming the wiring substrate film 7 are determined at
will, and are not limited to the above-described formation method
and material.
[0136] As shown in FIG. 22 and FIG. 23, a planarizing resist film 8
is disposed on the electrode connection portions 6a, 6b, and 6c.
The purpose of this planarizing resist film 8 is to smoothly
conduct the electrical connection between the wiring film 9
described below and the upper electrode film 6. When the wiring
film 9 is physically connected to the upper electrode film 6, it
may be difficult to avoid passing the end portions of the
piezoelectric film 5 over the edge of the lower electrode film 4.
In the present embodiment, the piezoelectric film 5 is formed by
wet etching, and the end portion thereof is in a reverse-tapered or
substantially perpendicular state. Therefore, if the wiring is
conducted without disposing the planarizing resist film 8, breaking
may occur at the end portion. Furthermore, since the lower
electrode film 4 is exposed, if insulation is not ensured by the
planarizing resist film 8, an electrical short circuit may occur.
The planarizing resist film 8 is disposed from the above-described
viewpoint.
[0137] The shape of the planarizing resist film 8 is determined at
will as long as the shape covers the wiring film 9 described below.
In the present embodiment, the planarizing resist film width t23 is
specified to be 200 .mu.m, and the planarizing resist film length
t24 is specified to be 50 .mu.m.
[0138] For the method for forming the planarizing resist film 8, a
resist film is patterned into a desired shape by the
photolithography technology and, thereafter, a heat treatment at
about 280.degree. C. to 300.degree. C. is conducted, so that the
patterned resist film is cured. In the present embodiment, the
thickness of the resist film at this time is specified to be about
2 .mu.m. However, it is desirable that this thickness is changed in
accordance with the thicknesses of the piezoelectric film 5 and the
lower electrode film 4, and the thickness is allowed to become
larger than or equal to the total thickness of the two.
[0139] In the present embodiment, a photosensitive resist film is
used as the above-described planarizing resist film 8. However, the
material is not limited to this. The material, as well as the
formation method, is determined at will as long as the material is
suitable for the above-described application and is electrically
non-conductive.
[0140] As shown in FIG. 24 and FIG. 25, a wiring film 9 is formed
to connect the upper electrode film 6 to the outside. This is for
facilitating electrical connection to the outside, and the wiring
film 9 passes over the top surface of the planarizing resist film 8
and is connected to the connection portion of the upper electrode
film 6. Although the shapes of the upper electrode connection
portions 6a, 6b, and 6c are determined at will, it is desirable
that the size is 5 .mu.m square or more to decrease electrical
contact resistance. In the present embodiment, it is a precondition
that the electrical connection to the outside is conducted by a
connection method through the use of a flip chip of Au bumps.
Therefore, Au bump regions for individual electrodes are ensured by
disposing electrode pads 101A, 101B, 101C, and 101D, as shown in
FIG. 24.
[0141] The electrode pads 101A, 101B, 101C, and 101D have areas
adequate for disposing the Au bumps. In the present embodiment, the
electrode pad portion length t25 is specified to be 120 .mu.m, and
the electrode pad width t26 is specified to be 120 .mu.m. Since
four portions including the driving electrode 6a, the left and
right detection electrodes 6b and 6c, the three portions
constituting the upper electrode film 6, and the lower electrode
film 4 are electrically connected to the outside independently,
each of the four portions is connected to an independent wiring
film 9. It is a precondition that the electrode pads 101A, 101B,
101C, and 101D are positioned in an element area AR.
[0142] In this step, polarization rails are also formed
simultaneously. The vibrator of the present embodiment is polarized
finally so as to stabilize the piezoelectric characteristic. In
order to efficiently conduct the polarization operation, elements
in the same row may be polarized by one operation. It is desirable
that wirings on the voltage application side and the GND side are
formed in advance to conduct the simultaneous polarization. As
shown in FIG. 26, each of polarization rails 111 and 112 is formed
in a horizontal straight line here. The elements and the rails are
independent of one another at this time, and connection of the
wiring on the voltage application side and connection of the wiring
on the GND side are conducted by forming Cu wirings 11, as
described below.
[0143] For the method for forming the wiring film 9, a technique of
so-called lift off is used, wherein a resist pattern film having an
opening portion in a desired shape is formed by the
photolithography technology, the wiring film is formed by
sputtering and, thereafter, sputtered films adhered to unnecessary
portions are removed at the same time with the removal of the
resist film. With respect to the material for the wiring film,
after 20 nm of Ti is deposited to improve the adhesion, 300 nm of
Cu having low electrical resistance and low cost is deposited, and
subsequently, 500 nm of Au is deposited to facilitate the
connection to the Au bump. However, the material and the formation
method for the wiring film is determined at will, and are not
limited to the above-described formation method and the
material.
[0144] Insulating Protective Film Formation Step
[0145] As shown in FIG. 27 and FIG. 28, an insulating protective
film 10 is formed on the vibration beam and the wirings. This may
facilitate prevention of leakage between electrodes due to external
factors, e.g., humidity, and prevention of oxidation of the
electrode films. It is desirable that the protective film width t27
on the vibrator is larger than the lower electrode width t20 and
smaller than the vibration beam width t6. In the present
embodiment, t27 is specified to be 98 .mu.m. It is desirable that
the protective film length t28 on the vibrator is longer than the
lower electrode length t19 and shorter than the vibration beam
length t5. In the present embodiment, t28 is specified to be 1.95
mm. The protective film 10 has a pattern covering the entire wiring
film 9. However, it is desirable that the protective film is not
disposed on the four electrode pad portions to be connected to Au
bumps and four connection portions to be connected to Cu wirings 11
selectively.
[0146] For the method for forming the protective film 10, a
technique of so-called lift off is used, wherein a resist pattern
film having an opening portion in a desired shape is formed by the
photolithography technology, the protective film is formed by
sputtering and, thereafter, sputtered films adhered to unnecessary
portions are removed at the same time with the removal of the
resist film. With respect to the material for the protective film
10, after 50 nm of Al.sub.2O.sub.3 is deposited to improve the
adhesion, 750 nm of SiO.sub.2 exhibiting a high insulating property
is deposited, and subsequently, 50 nm of Al.sub.2O.sub.3 is
deposited as an uppermost layer to improve the resist adhesion in
the following vibration beam formation. It is desirable that the
thickness of SiO.sub.2 to function as the insulating protective
film is at least double the thickness of the upper electrode film.
However, if the thickness becomes 1 .mu.m or more, burrs tend to be
generated in the lift off. Therefore, the thickness is specified to
be 750 nm in the present embodiment. Furthermore, the SiO.sub.2
film formation may be conducted at an Ar pressure of 0.4 Pa, which
is a lower limit of the electric discharge, to increase the film
density.
[0147] As shown in FIG. 29 and FIG. 30, the Cu wirings 11 are
formed. The Cu wirings 11 connect the driving electrode 6a and the
left and right detection electrodes 6b and 6c of the upper
electrode film 6 to the rail 111 on the voltage application side,
and connect the lower electrode 4 to the rail 112 on the GND side.
As shown in FIG. 31, the connection by the Cu wirings 11 is
conducted for all elements in a manner similar to that described
above. The reason Cu is used for the wirings is that Cu is
dissolved easily by wet etching after the polarization and,
thereby, the elements are allowed to become independent of each
other again without being damaged. Therefore, the material is
determined at will as long as the material is an electrically
conductive material capable of being eliminated without damaging
the elements. It is desirable that the wiring width t29 (refer to
FIG. 33) is 30 .mu.m or more to ensure continuity in the
polarization.
[0148] For the method for forming the Cu wirings 11, a technique of
so-called lift off is used, wherein a resist pattern film having an
opening portion in a desired shape is formed by the
photolithography technology, films of Cu are formed by sputtering
and, thereafter, sputtered films adhered to unnecessary portions
are removed at the same time with the removal of the resist film.
The Cu film thickness is specified to be 400 nm to ensure
continuity in the polarization. The method for forming the wiring
film is determined at will, and is not limited to the
above-described formation method.
[0149] As shown in FIG. 32, a back surface stopper film 12 is
formed. This facilitates prevention of occurrence of an odd edge
shape of the lowermost surface due to concentration of plasma when
penetration etching is conducted in the vibration beam formation
described below. In the present embodiment, 500 nm of SiO.sub.2 is
formed all over the back surface by sputtering.
[0150] Vibration Beam Formation Step
[0151] As shown in FIG. 33, FIG. 34, and FIG. 35, a beam space is
provided and, thereby, the vibration beam is formed. FIG. 34 is a
sectional view of the section indicated by a line XXXIV-XXXIV shown
in FIG. 33. FIG. 35 is a sectional view of the section indicated by
a line XXXV-XXXV shown in FIG. 33.
[0152] For the method for providing the beam space, a resist
pattern film having an opening portion corresponding to a
penetration portion 13 is formed by the photolithography
technology, the thermal oxidation film 2A is removed by ion etching
and, thereafter, the substrate 1 is etched until being penetrated.
The thermal oxidation film 2A may be removed by wet etching.
However, the ion etching is preferable in consideration of
dimension error due to side etching.
[0153] In the present embodiment, the vibration beam thickness t14
(diaphragm thickness t11) is 100 .mu.m. Therefore, it is desirable
that this amount is removed by etching in order to penetrate Si of
the substrate 1. In the usual ion etching and the like, it is
difficult to ensure the selection ratio relative to the resist film
and to leave a perpendicular wall surface. In the present
embodiment, a vibration beam having a perpendicular side wall
surface is formed by using an apparatus provided with inductively
coupled plasma (ICP) and a Bosch process in which etching and film
formation of a side wall protective film (SF6 in the etching and a
C4F8 gas in the film formation) are repeated. This technology of
perpendicularly grinding the Si material has been established
generally. In the present embodiment as well, a commercially
available apparatus is used. However, the method for providing the
beam space is determined at will, and is not limited to the
above-described method. In the present embodiment, the etching
width t7 is specified to be 200 .mu.m that is suitable for etching
by ICP. The Cu wirings 11 are prevented from being penetrated.
[0154] After the etching by ICP is completed, the back surface
stopper film 12 is removed. The removal method is determined at
will. In the present embodiment, the removal is conducted by wet
etching with ammonium fluoride. At this time, if the resist with
the penetration pattern is removed before the stopper film 12 is
removed, the insulating protective film 10 is eliminated.
Therefore, the resist is removed after the stopper film is removed.
FIG. 36 to FIG. 38 show the state after the stopper film 12 and the
resist are removed.
[0155] Polarization Treatment Step
[0156] The elements shown in FIGS. 39A and 39B are subjected to a
polarization treatment to stabilize the piezoelectric
characteristic. The elements in the same row are connected to an
external power supply through the application-side pads and the
GND-side pads so as to be polarized by one operation. The
connection method and the polarization method are determined at
will. In the present embodiment, the connection to the external
power supply is conducted by wire bonding and, thereafter, the
polarization treatment is conducted.
[0157] As shown in FIGS. 40A and 40B, after the polarization
treatment is conducted, unnecessary Cu wirings 11 are removed. When
cutting is conducted to separate the elements while the Cu wirings
11 remain, the Cu wirings 11 and the substrate 1 cause electrical
leakage at the cut surfaces. Therefore, it is desirable to perform
the removal chemically. In the present embodiment, the Cu wirings
11 are dissolved and removed by conducting wet etching with an
ENSTRIP solution produced by Meltex Inc., in such a way that the
elements are not damaged.
[0158] As described above, the vibration gyro sensor element 100 is
formed by the thin film process, a plurality of elements are
subjected to a polarization treatment by one operation through
wirings of the thin film produced by the above-described thin film
process and, thereby, large amounts of thin film gyros may be
formed inexpensively and stably.
[0159] The removal of the Cu wirings 11 is not limited to the
above-described dissolution and removal by the wet etching. In the
element cutting step described below, since the elements are cut
along the Cu wirings 11, the Cu wirings 11 may be removed by
grinding in the cutting of the elements with a dicer. In this case,
it is desirable that the formation width t29 of the Cu wiring 11 is
smaller than or equal to the cutting grindstone width. In the
present embodiment, the elements are separated by using a dicer
having a grindstone width of 40 .mu.m, it is desirable that the
formation width t29 of the Cu wiring 11 is 20 .mu.m or more and 40
.mu.m or less. If the width is less than 20 .mu.m, heat may be
generated due to the resistance in the application of the
polarization voltage and the wiring 11 may be fused. If the width
exceeds 40 .mu.m, the wiring may remain on the element after
separation since the width is larger than the grindstone width.
[0160] Gold Bump Formation Step
[0161] As shown in FIGS. 41A and 41B, Au bumps 14 to enable the
flip chip are formed. The Au bumps 14 are formed on the four
electrode pads.
[0162] Cutting Step
[0163] As shown in FIGS. 42A and 42B, fifteen vibration gyro sensor
elements 100 formed as piezoelectric thin film sensors on the
substrate 1 are divided into individual elements. As shown in FIG.
42B, cutting is conducted along cutting lines L1 to L3 in
accordance with the element size. In this manner, a vibration gyro
sensor element 100, which is partitioned by the penetration portion
13 and the cutting surfaces and serves as a piezoelectric thin film
sensor shown in FIG. 43, is completed. Consequently, a portion C
shown in FIG. 42B becomes an unnecessary portion.
[0164] Mounting Step
[0165] Individually divided vibration gyro sensor elements 100 are
mounted on a support substrate, e.g., an IC substrate, by a flip
chip mounting technique, as shown in FIG. 44, for example. The IC
substrate is designed in advance in such a way that electrical
connection is completed in accordance with the disposition of the
elements. In the example shown in FIG. 44, the vibration gyro
sensor element 100 is mounted in each of the X direction and the Y
direction and, thereby, a biaxial angular velocity sensor 150
provided with two vibration gyro sensor elements 100A and 100B is
constructed.
[0166] This angular velocity sensor 150 is hermetically sealed and
protected by a cover component 15 to prevent the elements and
circuits from contacting the outside, as shown in FIG. 45. The
material for the cover component 15 is determined at will. However,
the material, e.g., a metal, exhibiting a shielding effect is
desirable in consideration of an influence of an external noise. It
is desirable that the cover component 15 has a shape that does not
obstruct the vibration of the vibration beam.
Second Embodiment
[0167] In recent years, electronic components are generally
connected to mounting substrates by passing through reflow
furnaces. In this case, electronic components are exposed to heat
at about 250.degree. C. It is desirable that the characteristics of
the vibration gyro sensor element 100 are not changed at this
reflow temperature.
[0168] Accordingly, in a polarization treatment method of the
present embodiment, the temperature of high-temperature
polarization and the voltage application time are linked and the
start time of day Ts of the voltage application and the finish time
of day Te are controlled, as shown in FIG. 46. That is, the
temperature profile shown in FIG. 46 corresponds to the temperature
profile in the reflow furnace. The polarization treatment is
conducted by starting the voltage application at a temperature
higher than the temperature corresponding to the reflow (for
example, 250.degree. C. to 255.degree. C.) and finishing the
voltage application at a temperature (for example, room
temperature) lower than the reflow temperature.
[0169] In this manner, the state in which the reflow has been
conducted once may be brought about by starting the voltage
application at a temperature higher than the temperature
corresponding to the reflow and finishing the voltage application
at a temperature lower than the reflow temperature. Therefore, it
may become possible that the polarization characteristic is not
changed even when the reflow is conducted in the following step.
Furthermore, the adjustment of the detection signal may be
conducted by exposing to a temperature corresponding to the reflow
after the polarization treatment is conducted, as described
below.
[0170] FIG. 47 shows the relationship between the applied voltage
and the detection signal voltage in the polarization treatment. The
polarization temperature is the peak temperature (260.degree. C. in
the present example) in the reflow. As shown in FIG. 47, a higher
detection signal is attained as the applied voltage is increased,
and a detection signal of 1 V or more is attained at an applied
voltage of 5 V or more. When a detection signal of 1 V or more is
attained, IC may be allowed to operate appropriately, and a
predetermined detection sensitivity may be ensured. The detection
signal voltage becomes constant (1.5 V in the present example) at
an applied voltage of 15 V or more. When the polarization treatment
is conducted at the applied voltage at which the detection signal
becomes constant, variations in element characteristics among
wafers may be reduced.
[0171] The upper limit of the applied voltage may not be specified
as long as the applied voltage is within the range in which element
breakdown due to the voltage does not occur, that is, within the
range in which dielectric breakdown of the element does not occur.
In the example shown in FIG. 47, data are plotted until the applied
voltage in the polarization reaches 25 V. However, the applied
voltage may be further increased in accordance with the material
constituting the piezoelectric, as a matter of course. In addition,
the applied voltage may be changed in accordance with the treatment
temperature. For example, when the polarization treatment is
conducted at a temperature higher than or equal to the temperature
corresponding to the reflow, a voltage of 15 V or more (for
example, 20 V) is applied, and the applied voltage is decreased
(for example, 5 V) at a temperature lower than or equal to the
temperature corresponding to the reflow. When the magnitude of the
voltage applied to the piezoelectric film in the polarization
treatment is 5 V/.mu.m or more in terms of an electric field
strength, a detection signal voltage of a predetermined level or
more may be attained.
[0172] When the relationship between the temperature at which the
application of voltage is started and the detection signal voltage
in the polarization treatment is measured, the result shown in FIG.
48 is attained. The applied voltage is 5 V. In FIG. 48, the
application start temperature indicated by the horizontal axis is a
temperature determined by subtracting the peak temperature
(260.degree. C.) from the application start temperature. As is
clear from the result shown in FIG. 48, a constant detection signal
voltage (1 V) is attained by starting the voltage application at
the peak temperature or before the peak temperature is reached.
That is, it is ascertained from FIG. 48 that the detection signal
is high and constant when the voltage is applied from a temperature
lower than the peak temperature (the negative side of the
horizontal axis of the graph), whereas the detection signal is
decreased when the voltage is applied after the peak temperature is
passed (the positive side of the horizontal axis of the graph).
[0173] Furthermore, the relationship between the temperature at
which the application of voltage is interrupted and the detection
signal voltage after reflow is measured, and the result shown in
FIG. 49 is attained. The applied voltage is 5 V. In FIG. 49, the
voltage interruption temperature indicated by the horizontal axis
is a temperature determined by subtracting the voltage interruption
temperature from the reflow temperature (250.degree. C. in the
present example). As is clear from FIG. 49, a constant detection
signal voltage (1 V) is attained when the voltage application is
interrupted at a temperature lower than the reflow temperature.
That is, it is ascertained from FIG. 49 that the detection signal
is decreased when the voltage application is interrupted at a
temperature higher than the reflow temperature (the negative side
of the horizontal axis of the graph), whereas the detection signal
is high and constant when the voltage application is interrupted at
a temperature lower than the reflow temperature (the positive side
of the horizontal axis of the graph).
[0174] Therefore, the state in which the reflow has been conducted
once may be brought about by applying the voltage from a
temperature higher than the temperature corresponding to the reflow
until the temperature lower than the reflow temperature and,
thereafter, exposing to a temperature corresponding to the reflow,
as in the present embodiment. Consequently, it may become possible
that the polarization characteristic is not changed and a constant
detection signal voltage is attained even when the reflow is
conducted in the following step.
[0175] As is clear from FIG. 50, when a high temperature is applied
again after the polarization treatment and the attenuation factor
of the detection signal is measured, the attenuation factor of the
detection signal is decreased as the reheating is conducted at a
higher temperature and the exposure temperature becomes higher.
That is, FIG. 50 is a graph showing the attenuation factor of the
magnitude of detection signal and, therefore, indicating how the
magnitude of the initial signal is changed by the following heating
with respect to the detection signal of the vibrator only subjected
to the polarization treatment. It is ascertained from this graph
that there is a correlation between the reheating temperature and
the attenuation factor and the attenuation factor may be adjusted
by the heating temperature. Consequently, when the piezoelectric
characteristics of the vibrators in a wafer exhibit a distribution,
the reheating of the vibrator in a portion where the detection
signal is too high is conducted at a temperature higher than the
temperature of reheating of the other portion in order to allow the
detection signal to become the same level as that of the other
portion and, thereby, vibrators having a uniform detection signal
may be produced all over the wafer. In particular, when an upper
limit of the value of the detection signal is set in the signal
processing conducted by the IC, the detection signal may be
adjusted to become appropriate to the IC by adjusting the reheating
temperature, so that an improvement of the yield in the production
of vibrators may also be facilitated.
[0176] In this manner, with respect to the temperature and the
applied voltage of the above-described high-temperature
polarization, the voltage may be applied from a temperature higher
than the temperature corresponding to the reflow and the magnitude
of the detection signal may be adjusted by the exposure temperature
in the following step. That is, the magnitude of the detection
signal of the vibrator may be decreased to a desired magnitude and
adjusted by the temperature of the annealing treatment after the
polarization treatment. In the case where the reheating is
conducted after the polarization treatment according to an
embodiment of the present invention, the magnitude of the detection
signal may be adjusted to become a desired magnitude by the
reheating temperature.
Third Embodiment
[0177] In general, the piezoelectric film 105a (refer to FIG. 3)
sandwiched between the reference electrode 104a and the driving
electrode 106a (and detection electrodes 106b and 106c) is used
after being subjected to the above-described polarization treatment
to stabilize the piezoelectric characteristic. This polarization
treatment is a treatment to align the polarization directions of
the piezoelectric film in a predetermined direction. Usually, the
polarization treatment of the piezoelectric film is conducted at a
low temperature (room temperature to, for example, 30.degree. C.).
The piezoelectric film subjected to this low-temperature
polarization treatment is indicated by reference numeral 105L.
[0178] The inventors of the present invention noted that a loop
center O' (or a coercive electric field Ec') of the hysteresis loop
of the piezoelectric subjected to the polarization treatment at a
high temperature shifted in the negative electric field strength
direction as compared with a loop center O (or a coercive electric
field Ec) of the hysteresis loop of the piezoelectric film 105L
subjected to the polarization treatment at a low temperature. In
the following description, this piezoelectric film subjected to the
high-temperature polarization treatment is indicated by reference
numeral 105H.
[0179] When the piezoelectric film 105H subjected to the
high-temperature polarization treatment is driven by application of
an operation voltage corresponding to the loop center O of the
piezoelectric film 105L subjected to the low-temperature
polarization treatment, the piezoelectric film 105H is driven
substantially by an offset potential corresponding to the amount of
shift of the loop center O'. That is, the center electric field
strength of an alternating-current signal input into the driving
electrode 106a is set at a position sifted in the positive
direction from the center O' of the hysteresis loop of the
piezoelectric film 105H.
[0180] In this manner, the piezoelectric element is driven while a
predetermined offset potential is applied between the reference
electrode 104a and the driving electrode 106a as well as the
detection electrodes 106b and 106c. Therefore, the detection
signals from the detection electrodes 106b and 106c may be
generated at a potential higher than the reference potential, so
that the SN ratio may be increased and the detection sensitivity
may be improved.
[0181] Here, the operation voltage corresponding to the loop center
O of the piezoelectric film 105L subjected to the low-temperature
polarization treatment refers to the operation voltage
corresponding to the case where the driving electrode 106a and the
reference electrode 104a are set at an equal potential and the
piezoelectric element is used without application of the offset
potential between the two electrodes. In this manner, as shown in
FIG. 51, the loop center O' of the piezoelectric film 105H
subjected to the high-temperature polarization treatment is shifted
in the negative electric field strength direction relative to the
operation voltage.
[0182] FIG. 52A shows the relationship between the polarization
temperature and the amount of shift (absolute value) of the
coercive electric field Ec of the piezoelectric film. The
polarization temperature of the horizontal axis is represented by a
ratio (T/Tc) of the treatment temperature T to the Curie
temperature Tc of the piezoelectric film. In the present example,
PZT having a Curie temperature of about 400.degree. C. is used as a
sample of the piezoelectric film. FIG. 52B shows the treatment
temperature and the amount of shift of the coercive electric field
Ec at each of points T1 to T6 shown in FIG. 52A.
[0183] As shown in FIGS. 52A and 52B, the shift of the coercive
electric field Ec is observed when the polarization temperature
(T/Tc) is 0.2 or more. The amount of shift of the coercive electric
field is increased as the polarization temperature is increased.
The amount of shift of the coercive electric field corresponds to
the amount of offset of the operation voltage of the piezoelectric
film. Therefore, the characteristic (sensitivity) of the
piezoelectric film is also improved as the amount of shift of the
coercive electric field is increased. FIG. 53 shows an example of
the relationship between the amount of shift of the coercive
electric field and the piezoelectric characteristic. In FIG. 53,
the vertical axis indicates the ratio relative to the detection
sensitivity of the piezoelectric film 105L subjected to the
low-temperature polarization treatment.
[0184] According to the present embodiment, the coercive electric
field of the piezoelectric film 105H is allowed to shift by 0.5
V/.mu.m or more by the high-temperature polarization treatment
where the polarization temperature (T/Tc) is 0.2 or more, and in
particular, the treatment temperature T is 100.degree. C. or more.
Therefore, the piezoelectric characteristic may be enhanced by a
factor of 2 or more without conducting a circuit design in which a
bias potential is applied between the electrodes. Consequently, the
detection sensitivity to the angular velocity may be increased
significantly and, thereby, the element characteristics may be
improved. Furthermore, it may become possible to respond
satisfactorily to miniaturization of the element.
[0185] Other piezoelectric films having different Curie
temperatures tend to exhibit relationships similar to the
relationship between the polarization temperature (T/Tc) and the
amount of shift of the coercive electric field Ec shown in FIG.
52A. Therefore, for example, in the case where PZT is used as the
piezoelectric film, although the Curie temperature is varied
depending on the composition ratio of the zirconium to titanium, a
similar relationship may be applicable to any composition
ratio.
[0186] As described above, in the vibration gyro sensor element 100
of the present embodiment, since the operation voltage of the
piezoelectric film is set at the position shifted in the positive
direction from the center of the hysteresis loop of the
piezoelectric film by changing the polarization treatment condition
of the piezoelectric film, the detection sensitivity to the angular
velocity may be increased than ever and, thereby, the precision of
output may be improved.
[0187] As described below, in the simultaneous production of a
plurality of the elements at a wafer level, since variations in
element characteristics resulting from an in-plane uniformity
problem of the wafer treatment may be compensated, the available
percentage or the yield may be improved.
Fourth Embodiment
[0188] In general, small electronic components are connected to
mounting substrates by being passed through reflow furnaces, as
described above. In this case, the heat at about 250.degree. C. is
applied to the electronic component. It is desirable that the
characteristics of the vibration gyro sensor element 100 are not
changed at this reflow temperature. Therefore, in the
above-described second embodiment, the polarization treatment is
conducted at a temperature higher than or equal to the reflow
temperature in order that the characteristics of the element is not
changed even when the reflow temperature is applied.
[0189] On the other hand, various materials are contained in the
thin film constituting the vibrator, and when the element is
completed, warp may occur in the vibrator due to the tensile
strength of various thin film layers. Therefore, if the direction
of warp of the vibrator and the polarization direction of the
piezoelectric film are not taken into consideration, the electrical
characteristics of the element may not be stabilized, and the
polarization state may become extinct.
[0190] In the present embodiment, a vibration gyro sensor element
capable of exhibiting a desired detection output is produced by
specifying the relationship between the change of voltage
application polarity in the high-temperature polarization and the
warp of the vibrator generated in the formation process.
[0191] As explained in the above-described first embodiment, the
lower electrode film 4 constituting the reference electrode 104a,
the piezoelectric film 5 constituting the piezoelectric film 105a,
and the upper electrode film 6 constituting the driving electrode
106a and the detection electrodes 106b and 106c are disposed by
lamination on the surface of the vibrator 110 of the vibration gyro
sensor element 100. Since these thin film layers are formed on the
surface of the thin vibrator 110 of about 100 .mu.m in thickness,
the vibrator 110 itself may be warped with a high possibility due
to the stresses of materials depending on the selection of the
materials for these constituent films.
[0192] On the other hand, the piezoelectric film 5 itself is used
while being in the state in which the polarization is aligned after
a polarization treatment is conducted. As shown in FIG. 54A, in the
case where the upper electrode film 6 side is a positive electrode
(+) and the lower electrode film 4 side is a negative electrode
(-), the piezoelectric film 5 is polarized in the direction from
the upper electrode film 6 side toward the lower electrode film 4
side. When a vibration voltage is applied to this state, where the
upper electrode film 6 side is a positive electrode and the lower
electrode film 4 side is a negative electrode, the vibrator 110 is
warped toward the piezoelectric film 5 side, as shown in FIG. 55A.
Conversely, as shown in FIG. 54B, when a vibration voltage is
applied where the upper electrode film 6 side is the negative
electrode and the lower electrode film 4 side is the positive
electrode, the vibrator 110 functions in such a way that warp
occurs toward the side opposite to the piezoelectric film 5, as
shown in FIG. 55B. The positive state and the negative state are
repeated alternately with a resonant frequency of the vibrator and,
thereby, the vibrator is vibrated vertically.
[0193] With respect to the piezoelectric film 5, the direction of
occurrence of warp is inherently determined depending on the
polarization direction. When the polarization treatment is
conducted from the upper electrode film 6 side to the lower
electrode film 4 side, as shown in FIG. 54A, the vibrator 110 has a
property of warping toward the piezoelectric film 5 side, as shown
in FIG. 55A. Conversely, when the polarization treatment is
conducted from the lower electrode film 4 side to the upper
electrode film 6 side, as shown in FIG. 54B, the vibrator 110 has a
property of warping toward the side opposite to the piezoelectric
film 5, as shown in FIG. 55B.
[0194] Put another way, in the case where the piezoelectric film 5
is polarized from the upper electrode film 6 side to the lower
electrode film 4 side, as shown in FIG. 54A, the state in which the
vibrator 110 is warped toward the piezoelectric film 5 side, as
shown in FIG. 55A, indicates that the polarization is stable. The
same holds true for an inverse polarization direction.
[0195] Consequently, in the case where the vibrator 110 is warped
toward the piezoelectric film 5 side, as shown in FIG. 55A, at the
point in time when the lower electrode film 4, the piezoelectric
film 5, and the upper electrode film 6 are formed, the polarization
state tends to become stable in that direction. That is, it is
appropriate that a positive electrode is connected to the upper
electrode film 6 side, a negative electrode is connected to the
lower electrode film 4 side, and a polarization treatment is
conducted where the polarization direction is directed from the
upper electrode film 6 side toward the lower electrode film 4
side.
[0196] FIG. 56 is a plot of the detection signal output of an
actual vibrator with respect to the warp direction and the
polarization direction. In the present example, the vibrator 110 is
warped toward the piezoelectric film 5 side, as shown in FIG. 55A.
In FIG. 56, a term "polarization and warp are in the same
direction" indicates the polarization treatment in which the upper
electrode film 6 side is specified to be a positive electrode and
the lower electrode film 4 side is specified to be a negative
electrode, as shown in FIG. 54A, and a term "polarization and warp
are in opposite directions" indicates the polarization treatment in
which the upper electrode film 6 side is specified to be a negative
electrode and the lower electrode film 4 side is specified to be a
positive electrode, as shown in FIG. 54B.
[0197] It is ascertained from FIG. 56 that the output in the case
where the directions of the warp and the polarization are in
alignment with each other is higher than the output in the case
where the directions of the warp and the polarization are not in
alignment at any position of the wafer.
[0198] Furthermore, from the result of a long-duration continuous
test, as shown in FIG. 57, it is ascertained that the output of the
above-described sample in which the polarization and the warp are
in the same direction is kept constant for a long time, whereas the
characteristics of the sample in which the polarization and the
warp are in opposite directions is deteriorated, although this may
be caused by deterioration of the polarization state in the
long-duration continuous test.
[0199] Consequently, it is desirable that the polarization
direction of the piezoelectric film 5 is determined in
consideration of the state of the stress of the thin film material
formed on the vibrator 110, and the polarization treatment is
conducted in the direction suitable for applying the stress in the
same direction. In the above-described example, the state in which
the produced vibrator is warped toward the piezoelectric film side
is explained as an example. However, there is a case where the
vibrator is warped in the direction opposite to the direction in
the above-described example depending on the selection of the
material for the thin film. In this case, it is desirable that the
polarization application direction is allowed to be the reverse of
that in the above-described example and a polarization direction
suitable for stabilizing the polarization state is selected, as a
matter of course.
[0200] The piezoelectric element (vibration gyro sensor element)
and the method for manufacturing the same disclosed in the present
specification described above may be provided with the following
other configurations.
[0201] 1. A method for manufacturing a vibration gyro sensor
element provided with a vibrator including a first electrode film
disposed on a substrate surface, a piezoelectric film disposed on
the first electrode film, and a second electrode film disposed on
the piezoelectric film, the method including the steps of forming a
plurality of units of the above-described vibrators on the
substrate by a thin film process; and conducting a polarization
treatment of the plurality of vibrators simultaneously through
wirings disposed on the substrate by the above-described thin film
process.
[0202] 2. The method for manufacturing a vibration gyro sensor
element according to the above-described item 1, wherein the ratio
of the polarization treatment temperature of the above-described
piezoelectric film to the Curie temperature of the piezoelectric
film is 0.2 or more.
[0203] 3. A method for manufacturing a vibration gyro sensor
element provided with a vibrator including a first electrode film
disposed on a substrate surface, a piezoelectric film disposed on
the first electrode film, and a second electrode film disposed on
the piezoelectric film where the above-described vibrator is flip
chip mounted on a support substrate and the above-described support
substrate is connected through reflow to a mounting substrate, the
method including the step of applying a voltage from a temperature
higher than the temperature corresponding to the reflow and
finishing the voltage application at a temperature lower than the
temperature corresponding to the reflow in the polarization
treatment step of the above-described vibrator.
[0204] 4. The method for manufacturing a vibration gyro sensor
element according to the above-described item 3, the method
including the step of exposing the above-described vibrator to the
temperature corresponding to the reflow after the above-described
polarization treatment.
[0205] 5. The method for manufacturing a vibration gyro sensor
element according to the above-described item 3, wherein the
magnitude of the voltage in the above-described polarization
treatment of the above-described piezoelectric film is 5 V/.mu.m or
more in terms of an electric field strength.
[0206] 6. A vibration gyro sensor element provided with a vibrator
including a first electrode film disposed on a substrate surface, a
piezoelectric film disposed on the first electrode film, and a
second electrode film disposed on the piezoelectric film, wherein
the center electric field strength of an alternating-current signal
applied to the above-described piezoelectric film is set at a
position shifted in the positive direction from the center of a
hysteresis loop of the piezoelectric film.
[0207] 7. The vibration gyro sensor element according to the
above-described item 6, wherein the center electric field strength
of an alternating-current signal applied between the
above-described first electrode film and the above-described second
electrode film is set at a position shifted in the positive
direction from the center of a hysteresis loop of the
above-described piezoelectric film.
[0208] 8. The vibration gyro sensor element according to the
above-described item 7, wherein the amount of shift of the center
of the hysteresis loop of the above-described piezoelectric film is
0.5 V/.mu.m or more.
[0209] It should be understood by those skilled in the art that
various modifications, combinations, sub-combinations and
alterations may occur depending on design requirements and other
factors insofar as they are within the scope of the appended claims
or the equivalents thereof.
* * * * *