U.S. patent application number 11/974323 was filed with the patent office on 2008-04-17 for semiconductor laser devices and methods.
This patent application is currently assigned to The Board of Trustees of The University of Illinois. Invention is credited to Richard Chan, Milton Feng, Nick JR. Holonyak, Gabriel Walter.
Application Number | 20080089368 11/974323 |
Document ID | / |
Family ID | 46325001 |
Filed Date | 2008-04-17 |
United States Patent
Application |
20080089368 |
Kind Code |
A1 |
Feng; Milton ; et
al. |
April 17, 2008 |
Semiconductor laser devices and methods
Abstract
A method for producing controllable light pulses includes the
following steps: providing a heterojunction bipolar transistor
structure including collector, base, and emitter regions of
semiconductor materials; providing an optical resonant cavity
enclosing at least a portion of the transistor structure; and
coupling electrical signals with respect to the collector, base,
and emitter regions, to switch back and forth between a stimulated
emission mode that produces output laser pulses and a spontaneous
emission mode. In a form of the method, the electrical signals
include an AC excitation signal, and part of each excitation signal
cycle is operative to produce stimulated emission, and another part
of each excitation signal cycle is operative to produce spontaneous
emission.
Inventors: |
Feng; Milton; (Champaign,
IL) ; Holonyak; Nick JR.; (Urbana, IL) ; Chan;
Richard; (Champaign, IL) ; Walter; Gabriel;
(Champaign, IL) |
Correspondence
Address: |
MARTIN NOVACK
16355 VINTAGE OAKS LANE
DELRAY BEACH
FL
33484
US
|
Assignee: |
The Board of Trustees of The
University of Illinois
|
Family ID: |
46325001 |
Appl. No.: |
11/974323 |
Filed: |
October 12, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11068561 |
Feb 28, 2005 |
7286583 |
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11974323 |
Oct 12, 2007 |
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10861103 |
Jun 4, 2004 |
7091082 |
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11068561 |
Feb 28, 2005 |
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10646457 |
Aug 22, 2003 |
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10861103 |
Jun 4, 2004 |
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10861320 |
Jun 4, 2004 |
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11068561 |
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10646457 |
Aug 22, 2003 |
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10861320 |
Jun 4, 2004 |
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Current U.S.
Class: |
372/25 |
Current CPC
Class: |
H01S 5/06226 20130101;
H01S 5/305 20130101; H01S 5/0422 20130101; H01S 5/06812 20130101;
H01S 5/3054 20130101; H01S 5/3211 20130101; H01S 5/06203 20130101;
H01L 33/0016 20130101; H01S 5/34313 20130101; B82Y 20/00 20130101;
H01L 33/08 20130101; H01S 5/0618 20130101 |
Class at
Publication: |
372/025 |
International
Class: |
H01S 3/10 20060101
H01S003/10 |
Goverment Interests
GOVERNMENT RIGHTS
[0002] This invention was made with Government support under
Contract Number HR0011-04-1-0034 awarded by the Defense Advanced
Research Projects Agency (DARPA). The Government has certain rights
in the invention.
Claims
1. A method for producing controllable light pulses, comprising the
steps of: providing a heterojunction bipolar transistor structure
comprising collector, base, and emitter regions of semiconductor
materials; providing an optical resonant cavity enclosing at least
a portion of said transistor structure; and coupling electrical
signals with respect to said collector, base, and emitter regions,
to switch back and forth between a stimulated emission mode that
produces output laser pulses and a spontaneous emission mode.
2. The method as defined by claim 1, wherein said electrical
signals include an AC excitation signal, and wherein part of each
excitation signal cycle is operative to produce stimulated
emission, and another part of each excitation signal cycle is
operative to produce spontaneous emission.
3. The method as defined by claim 2, wherein, during said part of
said cycle, the current in the base region exceeds the stimulated
emission threshold of said device, and during said other part of
said cycle, the current in the base region does not exceed said
threshold.
4. The method as defined by claim 3, further comprising controlling
the frequency of said excitation signal to control the frequency of
said output laser pulses and controlling the relative amplitude of
said excitation signal to control the pulse width of said output
laser pulses.
5. The method as defined by claim 3, further comprising controlling
the relative amplitude of said excitation signal to control the
pulse width of said output laser pulses.
6. The method as defined by claim 2, further comprising providing
said AC excitation signal at a frequency of at least about 1
GHz.
7. The method as defined by claim 2, further comprising providing
said AC excitation signal at a frequency of at least about 3
GHz.
8. The method as defined by claim 4, further comprising providing
said AC excitation signal at a frequency of at least about 3
GHz.
9. The method as defined by claim 4, wherein said pulse width is
controlled to have a pulse width of less than about 100
picoseconds.
10. The method as defined by claim 5, wherein said pulse width is
controlled to have a pulse width of less than about 100
picoseconds.
11. The method as defined by claim 8, wherein said pulse width is
controlled to have a pulse width of less than about 100
picoseconds.
12. Apparatus for producing controllable light pulses, comprising:
a heterojunction bipolar transistor structure comprising collector,
base, and emitter regions of semiconductor materials; an optical
resonant cavity enclosing at least a portion of said transistor
structure; and means for coupling electrical signals with respect
to said collector, base, and emitter regions, to switch back and
forth between a stimulated emission mode that produces output laser
pulses and a spontaneous emission mode.
13. Apparatus as defined by claim 9, wherein said electrical
signals include an AC excitation signal, and wherein part of each
excitation signal cycle is operative to produce stimulated
emission, and another part of each excitation signal cycle is
operative to produce spontaneous emission.
14. Apparatus as defined by claim 10, wherein, during said part of
said cycle, the current in the base region exceeds the stimulated
emission threshold of said device, and during said other part of
said cycle, the current in the base region does not exceed said
threshold.
15. Apparatus as defined by claim 11, further comprising means for
controlling the frequency of said excitation signal to control the
frequency of said output laser pulses and controlling the relative
amplitude of said excitation signal to control the pulse width of
said output laser pulses.
16. Apparatus as defined by claim 11, further comprising means for
controlling the relative amplitude of said excitation signal to
control the pulse width of said output laser pulses.
17. Apparatus as defined by claim 13, further comprising means for
providing said AC excitation signal at a frequency of at least
about 1 GHz.
18. Apparatus as defined by claim 10, further comprising means for
providing said AC excitation signal at a frequency of at least
about 3 GHz.
19. Apparatus as defined by claim 15, further comprising means for
providing said AC excitation signal at a frequency of at least
about 3 GHz.
20. Apparatus as defined by claim 15, wherein said pulse width is
controlled to have a pulse width of less than about 100
picoseconds.
21. Apparatus as defined by claim 16, wherein said pulse width is
controlled to have a pulse width of less than about 100
picoseconds.
22. Apparatus as defined by claim 19, wherein said pulse width is
controlled to have a pulse width of less than about 100
picoseconds.
23. A method for producing high frequency laser pulses, comprising
the steps of: providing a heterojunction bipolar transistor
structure comprising collector, base, and emitter regions of
semiconductor materials; providing an optical resonant cavity
enclosing at least a portion of said transistor structure; and
coupling electrical signals, at least some of which have a
frequency of at least about 1 GHz, with respect to said collector,
base, and emitter regions, to produce output laser pulses at a
frequency of at least about 1 GHz.
24. The method as defined by claim 23, wherein at least some of
said electrical signals have a frequency of at least about 3 GHz,
and said output laser pulses have a frequency of at least about 3
GHz.
25. A method for determining the stimulated emission threshold of a
light-emitting transistor device, comprising the steps of:
providing a heterojunction bipolar transistor structure comprising
collector, base, and emitter regions of semiconductor materials;
providing an optical resonant cavity enclosing at least a portion
of said transistor structure; coupling electrical signals with
respect to said collector, base, and emitter regions; determining
the differential current gain transistor structure as a function of
the transistor base current; and determining the stimulated
emission threshold base current of said transistor structure as the
base current at which said differential current gain begins to
decrease with increasing base current.
Description
PRIORITY CLAIMS
[0001] The present application is a continuation-in-part of U.S.
patent application Ser. No. 10/861,103, filed Jun. 4, 2004 (which
is, in turn, a continuation-in-part of U.S. patent application Ser.
No. 10/656,457, filed Aug. 22, 2003), and the present application
is also a continuation-in-part of U.S. patent application Ser. No.
10/861,320, filed Jun. 4, 2004 (which is, in turn, a
continuation-in-part of U.S. patent application Ser. No.
10/656,457, filed Aug. 22, 2003).
FIELD OF THE INVENTION
[0003] This invention relates to semiconductor laser devices and
methods, and also to a laser transistor and techniques for
enhancing high speed optical signal generation.
BACKGROUND OF THE INVENTION
[0004] A part of the background hereof lies in the development of
light emitters based on direct bandgap semiconductors such as III-V
semiconductors. Such devices, including light emitting diodes and
laser diodes, are in widespread commercial use.
[0005] Another part of the background hereof lies in the
development of wide bandgap semiconductors to achieve high minority
carrier injection efficiency in a device known as a heterojunction
bipolar transistor (HBT), which was first proposed in 1948 (see
e.g. U.S. Pat. No. 2,569,376; see also H. Kroemer, "Theory Of A
Wide-Gap Emitter For Transistors" Proceedings Of The IRE, 45,
1535-1544 (1957)). These transistor devices are capable of
operation at extremely high speeds. An InP HBT has recently been
demonstrated to exhibit operation at a speed above 500 GHz (see W.
Hafez, J. W. Lai, and M. Feng, Elec Lett. 39, 1475 (October
2003).
[0006] The art had contained an objective of light emission in a
heterojunction bipolar transistor, and a theoretical striving for a
laser transistor. However, for various reasons, an operational
laser transistor has not heretofore been reported, and the
achievement of same is one of the objectives hereof. Also, control
of a laser transistor, to achieve advantageous high speed optical
signals, is among the further objectives hereof.
SUMMARY OF THE INVENTION
[0007] In the prior copending U.S. patent application Ser. Nos.
10/646,457, 10/861,103, and 10/861,320 (hereinafter, collectively,
"the prior copending applications"), all assigned to the same
assignee as the present Application, there is disclosed a direct
bandgap heterojunction transistor that exhibits light emission from
the base layer. Modulation of the base current produces modulated
light emission. [As used herein, "light" means optical radiation
that can be within or outside the visible range.] The prior
copending applications also disclose three port operation of a
light emitting HBT. Both spontaneous light emission and electrical
signal output are modulated by a signal applied to the base of the
HBT.
[0008] Another aspect of the prior copending applications involves
employing stimulated emission to advantage in the base layer of a
bipolar transistor (e.g. a bipolar junction transistor (BJT) or a
heterojunction bipolar transistor (HBT), in order to enhance the
speed of the transistor. Spontaneous emission recombination
lifetime is a fundamental limitation of bipolar transistor speed.
In an embodiment of the prior copending applications, the base
layer of a bipolar transistor is adapted to enhance stimulated
emission (or stimulated recombination) to the detriment of
spontaneous emission, thereby reducing recombination lifetime and
increasing transistor speed. In a form of this embodiment, at least
one layer exhibiting quantum size effects, preferably a quantum
well or a layer of quantum dots, preferably undoped or lightly
doped, is provided in the base layer of a bipolar transistor. At
least a portion of the base layer containing the at least one layer
exhibiting quantum size effects, is highly doped, and of a wider
bandgap material than the at least one layer. The at least one
quantum well, or layer of quantum dots, within the higher gap
highly doped material, enhances stimulated recombination and
reduces radiative recombination lifetime. A two-dimensional
electron gas ("2-DEG") enhances carrier concentration in the
quantum well or quantum dot layer, thereby improving mobility in
the base region. Improvement in base resistance permits reduction
in base thickness, with attendant reduction of base transport time.
As described in the prior copending applications, these advantages
in speed are applicable in high speed bipolar transistors in which
light emission is utilized, and/or in high speed bipolar
transistors in which light emission is not utilized. In light
emitting bipolar transistor devices, for example heterojunction
bipolar transistors of direct bandgap materials, the use of one or
more layers exhibiting quantum size effects can also be
advantageous in enhancing light emission and customizing the
emission wavelength characteristics of the devices.
[0009] In a further embodiment disclosed in the prior copending
applications, a semiconductor laser is set forth, including: a
heterojunction bipolar transistor structure comprising collector,
base, and emitter of direct bandgap semiconductor materials; an
optical resonant cavity enclosing at least a portion of the
transistor structure; and means for coupling electrical signals
with the collector, base, and emitter regions to cause laser
emission from the device.
[0010] In another embodiment disclosed in the prior copending
applications, a plurality of spaced apart quantum size regions
(e.g. quantum wells and/or quantum dots) having different
thicknesses are provided in the base region of a bipolar transistor
and are used to advantageously promote carrier transport
unidirectionally through the base region. As an example, the base
region can be provided with several spaced apart quantum size
regions of different thicknesses, with the thicknesses of the
quantum size regions being graded from thickest near the collector
to thinnest near the emitter. An injected electron is captured in a
smaller well, tunnels into the next bigger well, and then the next
bigger well, and so forth, until, at the biggest well closest to
the collector, it tunnels to and relaxes to the lowest state of the
biggest well and recombines. The arrangement of wells encourages
carrier transport unidirectionally from emitter toward collector.
Maximum recombination and light are derived from the biggest well
as near as possible to the collector, which is an advantageous
position, such as for optical cavity reasons. Carriers diffuse
"downhill" in energy; i.e., toward the thicker wells. The asymmetry
in well size provides improved directionality and speed of carrier
transport. In a light emitting HBT, light emission and device speed
are both enhanced.
[0011] In accordance with an embodiment of the invention, a device
and technique are set forth for high speed optical signal
generation with an enhanced signal to noise ratio and control of
"on" and "off" time durations utilizing the stimulated emission
process for the "on" state and spontaneous emission process for the
"off" state. The operating point and excitation of the transistor
laser are selected to obtain cycles that each have an "on" portion
of stimulated emission (laser optical output, and electrical signal
output) and an "off" portion of spontaneous emission (without
sensible optical output, and electrical noise).
[0012] A method is set forth in accordance with an embodiment of
the invention for producing controllable light pulses, including
the following steps: providing a heterojunction bipolar transistor
structure comprising collector, base, and emitter regions of
semiconductor materials; providing an optical resonant cavity
enclosing at least a portion of the transistor structure; and
coupling electrical signals with respect to said collector, base,
and emitter regions, to switch back and forth between a stimulated
emission mode that produces output laser pulses and a spontaneous
emission mode. In a preferred embodiment, the electrical signals
include an AC excitation signal, and part of each excitation signal
cycle is operative to produce stimulated emission, and another part
of each excitation signal cycle is operative to produce spontaneous
emission. In this embodiment, during said part of the cycle, the
current in the base region exceeds the stimulated emission
threshold of the device, and during said other part of the cycle,
the current in the base region does not exceed said threshold. Also
in this embodiment, the frequency of the excitation signal controls
the frequency of the output laser pulses and the relative amplitude
of the excitation signal controls the pulse width of the output
laser pulses. In a form of this embodiment, the AC excitation
signal is provided at a frequency of at least about 1 GHz, and the
pulse width of the output laser pulses is controlled to be less
than about 100 picoseconds.
[0013] Further features and advantages of the invention will become
more readily apparent from the following detailed description when
taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] FIG. 1 is a simplified cross-sectional diagram, not to
scale, of a light emitting transistor as described in a referenced
copending Application.
[0015] FIG. 2 shows, on the left, a diagram, not to scale, of the
epitaxial layers of a crystal used for making a heterojunction
bipolar light-emitting transistor (HBLET) in accordance with an
embodiment of the invention and which can be used in practicing
embodiments of the method of the invention, and, on the right, a
corresponding band diagram.
[0016] FIG. 3, shows, on the left, a processed, metallized, and
cleaved HBLET laser (top view) as made using the crystal of FIG. 2
and, on the right, an image of the operating device obtained with a
video CCD detector.
[0017] FIG. 4 shows the transistor I-V curves of another HBLET
laser with .about.260 .mu.m spacing between the Fabry-Perot
facets.
[0018] FIG. 5 shows, in quasi-continuous operation (88% duty cycle
at 60 Hz), the recombination radiation spectra of the HBLET device
of FIG. 3, but with slightly increased voltage bias V.sub.CE to
increase the reverse bias on the base-collector junction.
[0019] FIG. 6 shows the transistor I.sub.C versus V.sub.CE family
of curves (at 213 K) of a 450 .mu.m HBLET of another device in
accordance with an embodiment of the invention and which can be
used in practicing embodiments of the method of the invention.
[0020] FIG. 7 shows, in the curves (a) and (b), respectively, the
small signal current gain
.beta..sub.ac=.DELTA.I.sub.C/.DELTA.I.sub.B and current gain
.beta..sub.dc=I.sub.C/I.sub.B for V.sub.CB=0 for the device whose
I.sub.C curves are shown in FIG. 6.
[0021] FIG. 8 shows (at 213 K) the laser operation (curve (a)) and
spontaneous spectrum (curve (b)) power spectra of the transistor
laser biased at V.sub.CE=2 V and operating at 3 GHz.
[0022] FIG. 9 shows a picture of the transistor laser in operation
at 3 GHz, captured using a CCD camera.
[0023] FIG. 10 shows, in traces (a), (b) and (c), respectively, the
input signal modulated at 3 GHz, and the corresponding electrical
and optical outputs.
[0024] FIG. 11 shows the output collector I-V characteristics of an
HBLET. For the base current below laser threshold I.sub.bth=0.744
mA, the optical recombination process yields spontaneous emission
(low optical output). For base current above laser threshold the
optical recombination process is stimulated (higher optical output
power).
[0025] FIG. 12 shows a Gummel plot of base current and collector
current with Vce=Vbe and Vbc=0V. The current gain beta increases
(spontaneous emission), and the beta decreases when laser operation
of the HBLET starts, since the recombination process for stimulated
emission become "faster".
[0026] FIGS. 13(a), 13(b), 13(c), and 13(d) show, respectively, the
input voltage, output voltage, optical output, and optical power
spectrum for a laser transistor device operated in a stimulated
emission mode.
[0027] FIGS. 14(a), 14(b), and 14(c), show, respectively, the input
voltage, optical output, and optical power spectrum for a laser
transistor device operated in a spontaneous emission mode.
[0028] FIGS. 15(a), 15(b), 15(c), and 15(d) show, respectively, the
input voltage, output voltage, optical output, and optical power
spectrum for a laser transistor device operated in a near-threshold
mode.
[0029] FIG. 16 is a schematic diagram of an example of a circuit
that can be used to operate a light emitting transistor in
accordance with an embodiment of the invention.
[0030] FIG. 17 shows output collector I-V characteristics of an
HBLET, and signals that result when operated at different operating
points.
[0031] FIG. 18 shows the electrical output for operation at each of
the different operating points.
[0032] FIG. 19 shows the optical output for operation at each of
the different operating points.
DETAILED DESCRIPTION
[0033] FIG. 1 illustrates a device as set forth in the
above-referenced copending application Ser. No. 10/646,457. A
substrate 105 has the following layers disposed thereon:
subcollector 110, collector 130, base 140, emitter 150, and cap
layer 160. Also shown are collector metallization (or electrode)
115, base metallization 145, and emitter metallization 165.
Collector lead 117, base lead 147, and emitter lead 167 are also
shown. As described in the referenced copending Application, the
collector layer 130 comprises 3000 Angstrom thick n-type GaAs,
n=2.times.10.sup.16 cm.sup.-3, the base layer 140 comprises 600
Angstrom thick p+ carbon-doped compositionally graded InGaAs (1.4%
In), p=4.5.times.10.sup.19 cm.sup.3, the emitter layer 150
comprises 800 Angstrom thick n-type InGaP, n=5.times.10.sup.17
cm.sup.-3, and the cap layer comprises 1000 Angstrom thick n+
InGaAs, n=3.times.10.sup.19 cm.sup.3.
[0034] As described in the referenced copending Application, for
conventional PN junction diode operation, the recombination process
is based on both an electron injected from the n-side and a hole
injected from the p-side, which in a bimolecular recombination
process can be limited in speed. In the case of HBT light emission,
the base "hole" concentration is so high that when an electron is
injected into the base, it recombines (bimolecular) rapidly. The
base current merely re-supplies holes via relaxation to neutralize
charge imbalance. For a heterojunction bipolar transistor (HBT),
the base current can be classified into seven components, namely:
(1) hole injection into the emitter region (i.sub.Bp); (2) surface
recombination current in the exposed extrinsic base region
(i.sub.Bsurf); (3) base ohmic contact recombination current
(i.sub.Bcont); (4) space charge recombination current (i.sub.Bscr);
(5) bulk base non-radiative recombination current due to the
Hall-Shockley-Reed process (HSR) (i.sub.BHSR); (6) bulk base Auger
recombination current (i.sub.BAug); and (7) bulk base radiative
recombination current (i.sub.Brad). For a relatively efficient HBT
with ledge passivation on any exposed base region, the surface
recombination current can be reduced significantly. Hence, the base
current and recombination lifetime can be approximated as primarily
bulk HSR recombination, the Auger process, and radiative
recombination. The base current expressed in the following equation
(1) is then related to excess minority carriers, .DELTA.n, in the
neutral base region, the emitter area, A.sub.E, the charge, q, and
the base recombination lifetime, .tau..sub.n as
i.sub.B=i.sub.BHSR+i.sub.BAUG+i.sub.Brad=qA.sub.E.DELTA.n/.tau..sub.n
(1) The overall base recombination lifetime, .tau..sub.n, is
related to the separate recombination components of
Hall-Shockley-Read, .tau..sub.HSR, Auger, .tau..sub.AUG, and
radiative recombination, .tau..sub.rad, as
.tau..sub.n=(1/.tau..sub.HSR+1/.tau..sub.AUG+1/.tau..sub.rad).sup.-1
(2)
[0035] As further described in the referenced copending
Application, the light emission intensity .DELTA.I in the base is
proportional to i.sub.Brad and is related to the minority carrier
electron with the majority hole over the intrinsic carrier
concentration, (np-n.sub.i.sup.2), in the neutral base region and
the rate of radiative recombination process, B, set forth in
Equation (3) below, where the hole concentration can be
approximated as equal to base dopant concentration, N.sub.B. The
radiative base current expressed in equation (3) is then related to
excess minority carriers, .DELTA.n, in the neutral base region, and
the base recombination lifetime, .tau..sub.rad as
i.sub.Brad=qA.sub.EB(np-n.sub.i.sup.2)=qA.sub.EBnp=qA.sub.E.DELTA.n(BN.su-
b.B)=qA.sub.E.DELTA.n/.tau..sub.rad (3)
[0036] For a high speed HBT, it is easy to predict that the base
recombination lifetime can be less than half of the total response
delay time. Hence, the optical recombination process in the base
should be at least two times faster than the speed of the HBT. In
other words, HBT speed, which can be extremely fast, is
limiting.
[0037] In a first illustrated embodiment, a device and data are set
forth showing laser operation of an InGaP--GaAs--InGaAs
heterojunction bipolar light-emitting transistor (HBLET) with
AlGaAs confining layers and an InGaAs recombination quantum well
incorporated in the p-type base region. The epitaxial layers of the
crystal used for the HBLET laser are shown schematically in FIG. 2,
with a GaAs substrate 210, a 4000 .ANG. n-type heavily doped GaAs
buffer layer 215, followed by a 600 .ANG. n-type
Al.sub.0.40Ga.sub.0.60As layer 220, a 3500 .ANG. n-type
Al.sub.0.98Ga.sub.0.02As layer 222, and a 400 .ANG. n-type
Al.sub.0.40Ga.sub.0.60As layer 224 forming the bottom cladding
layers. These layers are followed by a 400 .ANG. n-type
sub-collector layer 230, then a 200 .ANG. In.sub.0.49Ga.sub.0.51P
etch stop layer (not shown), a 650 .ANG. undoped GaAs collector
layer 240, and a 940 .ANG. p-type GaAs base layer 250 (the active
layer), which includes also (in the base region) a 120 .ANG. InGaAs
QW (designed for .lamda..apprxeq.980 nm). The epitaxial HBLET laser
structure was completed with the growth of the upper cladding
layers, which included a 1200 .ANG. n-type In.sub.0.49Ga.sub.0.51P
wide-gap emitter layer 260, a 300 .ANG. n-type
Al.sub.0.70Ga.sub.0.30As oxidation buffer layer 270, a 3500 .ANG.
n-type Al.sub.0.98Ga.sub.0.02As oxidizable layer 275 (see J. M.
Dallesasse, N. Holonyak, Jr., A. R. Sugg, T. A. Richard, and N.
El-Zein, Appl. Phys. Lett. 57, 2844 (1990)), and a 1000 .ANG.
n-type Al.sub.0.40Ga.sub.0.60As layer 280. Finally, the HBLET laser
structure was capped with a 1000 .ANG. heavily doped n-type GaAs
contact layer 290.
[0038] The HBLET laser fabrication was performed by first
patterning 6 .mu.m protective SiN.sub.4 stripes on the crystal. The
top n-type Al.sub.0.98Ga.sub.0.02As oxidizable layer was then
exposed by wet etching (1:8:160
H.sub.2O.sub.2:H.sub.2SO.sub.4:H.sub.2O) to form a .about.6 .mu.m
emitter mesa. Next, a wide 150 .mu.m protective photoresist (PR)
stripe was placed over the emitter mesa and the unprotected
Al.sub.0.98Ga.sub.0.02As layer was completely removed (1:4:80
H.sub.2O.sub.2:H.sub.2SO.sub.4:H.sub.2O), revealing the
In.sub.0.49Ga.sub.0.51P wide-gap emitter layer. The protective PR
stripe was then removed and the sample was oxidized for 7.5 min at
425.degree. C. in a furnace supplied with N.sub.2+H.sub.2O,
resulting in a .about.1.0 .mu.m lateral oxidation which formed
.about.4 .mu.m oxide-defined apertures in the 6 .mu.m emitter mesa
(see, again, J. M. Dallesasse, N. Holonyak, Jr., A. R. Sugg, T. A.
Richard, and N. El-Zein, supra (1990); S. A. Maranowski, A. R.
Sugg, E. I. Chen, and N. Holonyak, Jr., Appl. Phys. Lett. 63, 1660
(1993)). The samples were annealed (in N.sub.2) at 430.degree. C.
for 7 minutes to reactivate p-dopants before the protective
SiN.sub.4 was removed by plasma (CF.sub.4) etching. A 100 .mu.m PR
window was formed over the emitter mesa and oxide layer, and
Au--Ge/Au was deposited over the sample to form metal contact.
After lift-off of the photoresist (PR) to remove excess metal, the
In.sub.0.49Ga.sub.0.51P layer was removed using a wet etch (4:1
HCl:H.sub.2O), exposing the p-type GaAs base layer. An 80 .mu.m
wide PR window was then patterned .about.15 .mu.m away from the
emitter mesa edge, and Ti--Pt--Au was evaporated for contact to the
base. Another lift-off process was then performed to remove excess
base contact metal. A 150 .mu.m PR window was then patterned
.about.6 .mu.m away from the base contact. The GaAs base and
collector layers were removed using a selective etch (4:1
C.sub.6H.sub.8O.sub.7:H.sub.2O.sub.2), and the
In.sub.0.49Ga.sub.0.51P etch-stop layer was removed by a wet etch
(16:15 HCl:H.sub.2O), exposing the heavily doped n-type GaAs
sub-collector layer. Au--Ge/Au metal alloy was evaporated over the
sample for contact to the exposed sub-collector layer, and another
lift-off process was performed to remove excess metal. The sample
was then lapped to a thickness of -75 .mu.m and the contacts
annealed. The HBLET samples were cleaved normal to the emitter
stripes to form Fabry-Perot facets, and the substrate side of the
crystal was alloyed onto Cu heat sinks coated with In.
[0039] A processed, metallized, and cleaved HBLET laser (top view)
is shown on the left in FIG. 3. The contact probes on the emitter
(E), base (B), and collector (C) are shown schematically resembling
the actual probes (E.sub.PRB, B.sub.PRB, and C.sub.PRB) on the
operating device at the right. The image on the right was obtained
with a video CCD detector and shows (h.nu.) the device laser beam
(photons) scattered from a Cu platform located slightly lower than
the laser crystal, which, as shown, has a -200 .mu.m spacing
between the cleaved Fabry-Perot facets. Current and bias voltage
(common emitter operation) were provided using a Tektronix Model
370 high resolution curve tracer connected to the HBLET by the
three probes labeled E.sub.PRB, B.sub.PRB, and C.sub.PRB in FIG. 3.
The HBLET laser was operated .about.200 K in a dry N.sub.2
environment.
[0040] The transistor I-V curves of another HBLET laser with
.about.260 .mu.m spacing between the Fabry-Perot facets are shown
in FIG. 4. As the base current, I.sub.b, is increased in 2 mA
intervals from 0 to 8 mA, the usual increase of differential
current gain is observed, .beta.=.DELTA.I.sub.c/.DELTA.I.sub.b, in
this case from .beta..about.2 at lower current to 6.5 at higher
current. Light versus V.sub.CE measurements (I.sub.b constant, data
not shown) indicate that radiative recombination improves as
V.sub.CE increases and then decreases at the onset of reverse
breakdown. Near I.sub.b=8 mA, and as V.sub.CE is increased,
however, stimulated recombination (stimulated emission) becomes
significant, and the HBLET operates both as a laser and a
transistor but with a distinct decrease in the current gain .beta..
Beyond threshold, I.sub.b equal to or greater than I.sub.th.about.8
mA, the differential gain .beta. decreases from 6.5 to a nearly
constant value of 2.5
(.alpha.=.beta./(.beta.+1)=I.sub.c/I.sub.e=0.71). Since .beta. can
be approximated as the simple ratio .tau..sub.n/.tau..sub.t (see B.
G. Streetman and S. Banerjee, Solid State Electronic Devices,
5.sup.th ed. (Pearson, N.J., 2004), p. 328), where .tau..sub.t is
the average (carrier) base transit time (which is almost the same
below and above threshold) and .tau..sub.n is the average electron
lifetime in the base, the electron lifetime is reduced by a factor
of 2.6 because of the stimulated recombination of the carriers
collected in the 120-.ANG. QW. The QW operates as a unique
pseudo-collector (see E. A. Rezek, H. Shichijo, B. A. Vojak, and N.
Holonyak, Jr., Appl. Phys. Lett. 31, 534 (1977)), and can be
adjusted to govern the base recombination and thus both the optical
output and transistor gain (.beta.). It can be noted for comparison
that at room temperature there was observed (data not shown) a
differential current gain .beta. of 10 at I.sub.b=2 mA and 30 at 8
mA (or current transfer ratio, .alpha.=I.sub.x/I.sub.e of 0.91 and
0.96).
[0041] FIG. 5 shows, in quasi-continuous operation (88% duty cycle
at 60 Hz), the recombination radiation spectra of the HBLET device
of FIG. 3, but with slightly increased voltage bias V.sub.CE to
increase the reverse bias on the base-collector junction. At (a)
I.sub.b=6 mA, the HBLET recombination radiation exhibits a peak
wavelength of 954 nm and a spectral width of .about.280 .ANG.. At
(b) I.sub.b=8 mA, the onset of stimulated emission can be seen with
distinct spectral narrowing and mode development. At (c) I.sub.b=10
mA the laser modes are fully developed (.lamda.=958 nm), clearly
indicating transistor laser operation, which is evident also in
FIG. 3. It can be noted that the 200 .mu.m long HBLET laser of FIG.
3 (right side) was operated with pulsed base current (1% duty cycle
at 1 MHz) to prevent saturation of the Si-CCD viewing camera.
[0042] The described results demonstrate that an HBLET, suitably
modified with a resonator cavity and a recombination QW (or QWs) in
the p-type base (a pseudo-collector, a second collector), can be
operated simultaneously as a laser and transistor with gain
.beta.=.DELTA.I.sub.c/.DELTA.I.sub.b>1. At laser threshold the
transistor gain decreases sharply, but still supports three-port
operation (electrical input, electrical output, and optical
output).
[0043] In the description of the foregoing embodiment, it is shown
that a heterojunction bipolar light emitting transistor (HBLET)
having certain features, can support stimulated recombination and
laser operation. In the following further embodiment, a three-port
transistor laser, having certain features, exhibits microwave
operation and optical modulation. In this embodiment, the epitaxial
layers of the crystal used for the HBLET laser include of a 100
.ANG. n-type heavily doped GaAs buffer layer, followed by a 630
.ANG. n-type Al.sub.0.40Ga.sub.0.60As layer, a 4000 .ANG. n-type
Al.sub.0.98Ga.sub.0.02As layer, and a 250 .ANG. n-type
Al.sub.0.40Ga.sub.0.60As layer forming the bottom cladding layers.
These layers are followed by a 300 .ANG. n-type sub-collector
layer, then a 150 .ANG. In.sub.0.49Ga.sub.0.51P etch stop layer, a
600 .ANG. undoped GaAs collector layer, and a 850 .ANG. p-type GaAs
base layer, which includes also (in the base region) a 120 .ANG.
InGaAs QW (designed for .lamda..apprxeq.980 nm). The epitaxial
HBLET laser structure is completed with the growth of the upper
cladding layers, which include a 600 .ANG. n-type
In.sub.0.49Ga.sub.0.51P wide-gap emitter layer, a 50 .ANG. n-type
GaAs buffer layer, a 200 .ANG. n-type Al.sub.0.35Ga.sub.0.65As
oxidation buffer layer, a 200 .ANG. n-type Al.sub.0.80Ga.sub.0.20As
oxidation buffer layer, a 4000 .ANG. n-type
Al.sub.0.95Ga.sub.0.05As oxidizable layer, a 300 .ANG. n-type
Al.sub.0.80Ga.sub.0.20As layer, and a 500 .ANG. n-type
Al.sub.0.35Ga.sub.0.65As layer. Finally, the HBLET laser structure
is capped with a 1000 .ANG. heavily doped n-type GaAs contact
layer.
[0044] The HBLET laser fabrication was performed by first
patterning 8 .mu.m protective SiN.sub.4 stripes on the crystal. The
top n-type Al.sub.0.98Ga.sub.0.02As oxidizable layer was then
exposed by wet etching (1:8:160
H.sub.2O.sub.2:H.sub.2SO.sub.4:H.sub.2O) to form a .about.6 .mu.m
emitter mesa. Next, 10 .mu.m and 50 .mu.m (40 .mu.m apart)
photoresist (PR) windows were formed with the emitter mesa placed
between the two windows and .about.5 .mu.m away from the 10 .mu.m
window. The unprotected Al.sub.0.98Ga.sub.0.02As layer was then
completely removed (1:4:80
H.sub.2O.sub.2:H.sub.2SO.sub.4:H.sub.2O), revealing the
In.sub.0.49Ga.sub.0.51P wide-gap emitter layer. The protective PR
stripe was dissolved and the sample was oxidized for 6.5 min at
425.degree. C. in a furnace supplied with N.sub.2+H.sub.2O,
resulting in .about.1.0 .mu.m lateral oxidation which forms
.about.4 .mu.m oxide-defined apertures in the 6 .mu.m emitter mesa.
(Again, see J. M. Dallesasse, N. Holonyak, Jr., A. R. Sugg, T. A.
Richard, and N. El-Zein, Appl. Phys. Lett. 57, 2844 (1990); S. A.
Maranowski, A. R. Sugg, E. I. Chen, and N. Holonyak, Jr., Appl.
Phys. Lett. 63, 1660 (1993)). The samples were annealed (in
N.sub.2) at 430.degree. C. for 6.5 minutes to reactivate p-dopants
before the protective SiN.sub.4 is removed by plasma (CF.sub.4)
etching. The remaining InGaP emitter was selectively etched using
HCl. The base-collector contact layers were then exposed by a
selective wet etch (4:1 C.sub.6H.sub.8O.sub.7:H.sub.2O.sub.2) for
GaAs and InGaAs, and HCl for In.sub.0.49Ga.sub.0.51P. Then, a 50
.mu.m PR window was formed over the 10 .mu.m base contact window
and the oxidized Al.sub.0.98Ga.sub.0.02As layer. A 1 .mu.m thick
Pd--Pt--Au p-type ohmic contact was deposited on top of the
partially exposed base layer to form the base metal contact
(followed by a lift-off process). Next, 30 .mu.m and 50 .mu.m (5
.mu.m apart) PR windows were opened for the emitter and collector
metal contact deposition, and 1 .mu.m thick n-type contact
AuGe--Ni--Au metal alloy was deposited on the crystal and another
lift-off process was performed to remove excess metal. The sample
was then lapped to a thickness of .about.100 .mu.m and annealed.
The HBLET samples were cleaved normal to the emitter stripes to
form Fabry-Perot facets, and the substrate side of the crystal was
alloyed onto Cu heat sinks coated with indium.
[0045] The transistor I.sub.C versus V.sub.CE family of curves (at
213 K) of a 450 .mu.m HBLET of this embodiment is shown in FIG. 6.
As the base current I.sub.B is increased in 2.5 mA intervals from 0
to 15 mA, the current gain (.beta..sub.dc=I.sub.C/I.sub.B)
increases to -5.65 for I.sub.B.ltoreq.I.sub.th and then decreases
to -4.5 for I.sub.B.gtoreq.I.sub.th. At I.sub.B=7.5 mA one observes
in FIG. 6 a negative slope in the differential or small signal
.gamma. (.gamma..sub.ac=.DELTA.I.sub.c/.DELTA.I.sub.B) associated
with a transistor in laser operation, as described in conjunction
with the previous embodiment. The transistor's V.sub.BE curve is
superimposed on the family of I.sub.C versus V.sub.CE curves to
indicate the zero base-collector bias point, the boundary
V.sub.CB=0. From FIG. 6 and by observing the gain characteristic,
it can be seen that the transistor operates as a laser over a wide
range of V.sub.CE (beyond V.sub.CB=0). Light versus base current
measurements (data not shown) indicate small variation in laser
light intensity when the transistor operates in the saturation mode
(constant I.sub.C), and decreases at high reverse bias and the
onset of heating.
[0046] A novel technique is used for determining the threshold
current of a transistor laser that is based on the electrical gain
of the transistor. This eliminates the need to have an additional
external feedback system (photodetector) to verify that the device
is operating as a laser. The small signal current gain
.beta..sub.ac=.DELTA.I.sub.C/.DELTA.I.sub.B and current gain
.beta..sub.dc=I.sub.C/I.sub.B for V.sub.CB=0 are shown by curves
(a) and (b) of FIG. 7. From curve (a) it can be observed that the
small signal gain increases as I.sub.B increases and decreases
sharply at the onset of stimulated emission, or for amplified
spontaneous emission (I.sub.B=6.7 mA, .beta..sub.ac=8.6). The peak
of curve (b) in FIG. 7 can be defined as the threshold current of
the transistor laser (I.sub.B=I.sub.th=7.4 mA). The transistor
laser operation is fully developed when .beta..sub.ac reaches a
minimum (.beta..sub.ac=3.7) at I.sub.B.apprxeq.7.9 mA. This method
of threshold current measurement is verified by comparison with
standard light versus intensity (L-I) measurements (data not shown)
and from visual observation of the laser diffraction pattern using
an infrared CCD camera. It is consistent also with spectral
narrowing.
[0047] FIG. 8 shows (at 213 K) the laser operation (curve (a)) and
spontaneous spectrum (curve (b)) of the transistor laser of the
present embodiment biased at V.sub.CE=2 V and operating at 3 GHz.
The input voltage waveform is generated using a clock signal from
an HP70841A pattern generator which has a maximum clock signal of 3
GHz. The output measurements were made using an HP70951 B optical
spectrum analyzer. A maximum power level of -63.4 dBm was measured
at .lamda.=966.5 nm for the spontaneous emission, and for laser
operation a power output of -21.44 dBm (.lamda.=964.4 nm). The
small output power of the transistor laser was attributed to weak
fiber coupling. Additional free space measurements have yielded
powers at least 8 times greater. A picture of the transistor laser
in operation at 3 GHz, captured using a CCD camera, is shown in
FIG. 9. The light emission from the front Fabry-Perot facet was
coupled (upward in FIG. 9) into the optical fiber, which was
connected directly into the input of the optical spectrum
analyzer.
[0048] A signal generator, a wideband detector, a power meter and a
digital oscilloscope were used for the three-port (electrical
input, electrical output and optical output) direct modulation
characterization of the transistor laser. A cold station equipped
with a pair of 40 GHz ground-signal microwave probes was used to
enable measurements at 213 K. The HBLET, with .about.450 .mu.m
spacing between the Fabry-Perot facets, was biased in the normal
operating mode (V.sub.CE=2 V and I.sub.B=9 mA), and a small signal
sinusoidal voltage waveform with a peak-to-peak amplitude of 0.75 V
was supplied to the base (input port) of the device. The input
voltage waveform was generated using a clock signal from the
HP70841A pattern generator (maximum clock signal of 3 GHz), and the
electrical output collector-emitter voltage waveform was measured
using a 20 GHz digital sampling oscilloscope. The complementary
output of the input waveform clock signal was measured at a second
separate channel of the oscilloscope. The output of the transistor
laser was coupled into a multimode fiber probe with a core diameter
of 25 .mu.m. The laser signal was fed into a high-speed (10 Gb/s)
wideband (400 to 1700 nm) InGaAs detector. The detector output
voltage, base input voltage, and collector output voltage were all
displayed simultaneously on a four channel sampling oscilloscope.
The input signal modulated at 3 GHz (top trace) and the
corresponding electrical and optical outputs are shown in FIGS. 10
(a), (b) and (c), respectively. When the 3 GHz base current is held
(decreased) below the threshold current, the optical output
waveform was not observed, making evident, in contrast, that
stimulated emission defines a much stronger laser output
signal.
[0049] In accordance with an embodiment of the invention, a device
and technique are set forth for high speed optical signal
generation with an enhanced signal to noise ratio and control of
"on" and "off" time durations utilizing the stimulated emission
process for the "on" state and spontaneous emission process for the
"off" state. The operating point and excitation of the transistor
laser are selected to obtain cycles that each have an "on" portion
of stimulated emission (laser optical output, and electrical signal
output) and an "off" portion of spontaneous emission (without
optical output, and electrical noise).
[0050] The transistor I-V curves of an HBLET laser with .about.450
.mu.m spacing between the Fabry-Perot facets are shown in FIG. 11.
At a base current I.sub.b=0.744 mA, the HBLET reaches laser
threshold and changes transistor gain, .beta.=DI.sub.c/dI.sub.b,
from .beta.=5.5 to 4.5 or (.alpha.=1/(.beta.+1)=0.85.fwdarw.0.81).
As above noted, an HBLET transistor laser has an important feature
in the I-V curves in the transition from spontaneous emission to
stimulated emission. FIG. 12 shows a Gummel plot of base current
and collector current with Vce=Vbe and Vbc=0V. The current gain
beta increases (spontaneous emission), and the beta decreases when
laser operation of the HBLET starts, since the recombination
process for stimulated emission become "faster".
[0051] Experiments were conducted on the transistor laser in the
common emitter configuration with 3 GHz modulation of the
electrical input (controllable in frequency and amplitude) at the
base terminal of the device.
[0052] A mode of operation termed a stimulated emission mode had,
for example, the following initial operating parameters:
V.sub.be=1.67 V, V.sub.ce=2 V, I.sub.b=16 mA and I.sub.c=69.2 mA.
As expected, in the stimulated emission mode (i.e., with the input
consistently at a level above the threshold for stimulated
emission), the electrical input and output, and the optical output
as shown in graphs 13(a), 13(b), and 13(c), respectively, of FIG.
11, are similar to the corresponding graphs 10(a), 10(b) and 10(c)
of FIG. 10 for a similar device, and the graph 13(d) of the laser
power spectrum is similar to the corresponding graph of FIG. 8 for
the similar device.
[0053] A mode of operation termed a spontaneous emission mode had,
for example, the following initial operating parameters:
V.sub.be=1.47 V, V.sub.ce=2 V, I.sub.b=5 mA, and I.sub.c=19.84 mA.
The graphs of FIG. 14 show results for the spontaneous emission
mode (i.e., with the input consistently at a level below the
threshold for stimulated emission), the graph 14(a) showing the
sinusoidal electrical input, the graph 14(b) showing the optical
signal output, which is seen to be background noise characteristic
of spontaneous emission, and the graph 14(c) showing the optical
output power spectrum of the spontaneous emission mode.
[0054] A mode of operation termed a near-threshold mode had, for
example, the following initial operating parameters: V.sub.be=1.57
V, V.sub.ce=2 V, I.sub.b=10 mA, and I.sub.c=46.2 mA. The graphs of
FIG. 15 show results for the near-threshold mode (i.e., with each
cycle of the sinusoidal input signal having an "on" portion during
which the base current exceeds the threshold for stimulated
emission, and an "off" portion during which the base current is
below the threshold for stimulated emission). The graphs 15(a) and
15(b) again show, respectively, the electrical input and output
signals. The graph 15(c) shows the optical output, which is seen to
have a stimulated emission laser pulse (during the part of the
cycle when the base threshold current is exceeded) and spontaneous
emission (during the part of the cycle when the base threshold
current is not exceeded). In this case, for the 3 GHz input signal
(which, it is evident, can be readily exceeded, within the
capability of the present device, with better test equipment), the
laser pulses, for the conditions set forth, have a half-power pulse
width of less than about 100 picoseconds. By adjusting the relative
signal amplitude (e.g. by controlling bias and/or the AC signal
amplitude and/or load), the pulse width can be advantageously
controlled. The graph 15(d) shows the optical output power spectrum
for this case.
[0055] FIG. 16 is a diagram of an example of a circuit that can be
used to operate the light emitting transistor (LET) 1610, under
various conditions, including conditions employed in examples of
embodiments hereof. In this example, a controllable oscillator 1615
is coupled to the base terminal of the LET via a bias tee 1620, and
the middle branch of the bias tee 1620 is coupled to a controllable
bias voltage V.sub.BE. The emitter terminal is coupled to ground
reference potential and the collector terminal is coupled, via a
bias tee 1640, to a variable load resistor 1660. The middle branch
of the bias tee 1640 is coupled to controllable bias potential
V.sub.CE.
[0056] The graph of FIG. 17, which also illustrates exemplary
electrical input (above the graph), electrical output (below the
graph), and optical output (on the right side of the graph), shows
how three different output DC bias conditions can be used to
generate optical outputs with controllable pulse widths. FIGS. 19
and 20 respectively show the three electrical and optical outputs,
for the three respective operating points, plotted together.
* * * * *