U.S. patent application number 10/080915 was filed with the patent office on 2003-08-28 for apparatus with processing stations for manually and automatically processing microelectronic workpieces.
Invention is credited to Harris, Randy, Woodruff, Daniel J..
Application Number | 20030159921 10/080915 |
Document ID | / |
Family ID | 27752885 |
Filed Date | 2003-08-28 |
United States Patent
Application |
20030159921 |
Kind Code |
A1 |
Harris, Randy ; et
al. |
August 28, 2003 |
Apparatus with processing stations for manually and automatically
processing microelectronic workpieces
Abstract
A method and apparatus for manually and automatically processing
microelectronic workpieces. The apparatus can include a tool having
a plurality of processing stations, all of which are manually
accessible to a user, and an input/output station configured to
support at least one microelectronic workpiece for automatic
transfer to and from the processing stations. A transfer device is
positioned proximate to the input/output station and the processing
stations and is configured to automatically transfer
microelectronic workpieces between the input/output station and the
processing stations. The apparatus can be used for both manual and
automatic processing of microelectronic workpieces, either
sequentially or simultaneously. The processing stations can be
configured to perform on the microelectronic workpiece functions
such as material application, material removal, seed layer
enhancement, rinsing, drying, annealing, baking, and metrology.
Inventors: |
Harris, Randy; (Kalispell,
MN) ; Woodruff, Daniel J.; (Kalispell, MN) |
Correspondence
Address: |
PERKINS COIE LLP
PATENT-SEA
P.O. BOX 1247
SEATTLE
WA
98111-1247
US
|
Family ID: |
27752885 |
Appl. No.: |
10/080915 |
Filed: |
February 22, 2002 |
Current U.S.
Class: |
204/224R ;
204/198; 204/471 |
Current CPC
Class: |
H01L 21/76874 20130101;
H01L 21/76868 20130101; C25D 17/00 20130101; H01L 21/67766
20130101; H01L 21/76843 20130101; H01L 21/76873 20130101; C25D
7/123 20130101; C25D 17/001 20130101; H01L 2221/1089 20130101 |
Class at
Publication: |
204/224.00R ;
204/198; 204/471 |
International
Class: |
C25D 017/00; C25D
001/12 |
Claims
I/we claim:
1. An apparatus for processing microelectronic workpieces,
comprising: a plurality of processing stations, all of the
processing stations of the apparatus being manually accessible to a
user to manually load microelectronic workpieces for processing, at
least one of the processing stations including an application
station configured to apply a material to the microelectronic
workpiece; an input/output station configured to support at least
one microelectronic workpiece for automatic transfer to and from
the processing stations; and a transfer device positioned proximate
to the input/output station and the processing stations, the
transfer device being automatically movable to transfer
microelectronic workpieces between the input/output station and the
processing stations.
2. The apparatus of claim 1 wherein the application station
includes: a first vessel configured to provide a processing fluid,
the first vessel having a weir to define a level of the processing
fluid; a second vessel disposed around the first vessel to receive
the processing fluid proceeding over the weir; a workpiece support
positioned to carry the microelectronic workpiece in contact with
the processing fluid in the first vessel; a first electrode support
positioned in the first vessel and configured to carry a first
electrode; and a second electrode support carried by the workpiece
support and positioned to carry a second electrode in contact with
the microelectronic workpiece when the workpiece support carries
the microelectronic workpiece.
3. The apparatus of claim 1 wherein the application station
includes: at least one vessel configured to provide a processing
fluid; one or more electrode supports positioned in the vessel and
configured individually or together to carry a plurality of first
electrodes; and a workpiece support positioned at least proximate
to the at least one vessel to carry the microelectronic workpiece
in contact with the processing fluid in the vessel, the workpiece
support being configured to carry at least one second electrode in
contact with the microelectronic workpiece when the workpiece
support carries the microelectronic workpiece.
4. The apparatus of claim 1 wherein the application station
includes: at least one vessel configured to carry a processing
fluid; one or more electrode supports positioned in the vessel and
configured individually or together to carry a plurality of first
electrodes, the first electrodes being spaced annularly apart from
each other; and a workpiece support positioned at least proximate
to the at least one vessel to carry the microelectronic workpiece
in contact with the processing fluid in the vessel, the workpiece
support being configured to carry at least one second electrode in
contact with the microelectronic workpiece when the workpiece
support carries the microelectronic workpiece.
5. The apparatus of claim 1 wherein the application station
includes: a reaction vessel comprising-an outer container having an
outer wall; a first inlet configured to introduce a primary flow
into the outer container; at least one second inlet configured to
introduce a secondary flow into the outer container separate from
the primary flow; a dielectric field shaping unit in the outer
container coupled to the second inlet to receive the secondary
flow, the field shaping unit being configured to contain the
secondary flow separate from the primary flow through at least a
portion of the outer container, and the field shaping unit having
at least one electrode compartment through which the secondary flow
can pass while the secondary flow is separate from the primary
flow, the electrode compartment being configured to receive at
least one electrode.
6. The apparatus of claim 1 wherein the application station
includes: a first vessel configured to provide an electroless
processing fluid, the first vessel having a weir positioned to
define a level of the processing fluid; a second vessel disposed
around the first vessel to receive the electroless processing fluid
proceeding over the weir; a support positioned to carry the
microelectronic workpiece in contact with the electroless
processing fluid in the first vessel; and a reservoir configured to
carry the electroless processing fluid, the reservoir being in
fluid communication with the first vessel.
7. The apparatus of claim 1 wherein at least one of the processing
stations includes a metrology station having: a support configured
to releasably carry the microelectronic workpiece; a measurement
device positioned at least proximate to the support and configured
to detect a characteristic of a conductive material of the
microelectronic workpiece; and an output device operatively coupled
to the measurement device to transmit an output signal
corresponding to the detected characteristic of the conductive
material of the microelectronic workpiece.
8. The apparatus of claim 1 wherein at least one of the processing
stations includes a spray station having: a vessel configured to
carry a fluid; a support positioned proximate to the vessel, the
support being configured to carry the microelectronic workpiece;
and a fluid manifold positioned within the vessel, the fluid
manifold being coupleable to a source of fluid, the fluid manifold
having a plurality of fluid jets directed toward the support to
spray the microelectronic workpiece with the fluid.
9. The apparatus of claim 1 wherein at least one of the processing
stations includes a material removal station, the material removal
station including a rotor having a first portion and a second
portion facing toward the first portion, the first and second
portions defining a chamber volume configured to removably receive
the microelectronic workpiece, wherein the first portion includes a
first fluid passage having a first aperture directed into the
chamber volume and facing the second portion, the first aperture
being coupleable to a first fluid source, and wherein the second
portion includes a second fluid passage having a second aperture
directed into the chamber volume and facing the first portion, the
second aperture being coupleable to a second fluid source.
10. The apparatus of claim 1 wherein at least one of the processing
stations includes a thermal processing station having a heater
configured to elevate a temperature of the microelectronic
workpiece.
11. The apparatus of claim 1 wherein at least one of the processing
stations includes a thermal processing station, the thermal
processing station having: a base; a support carried by the base
and configured to removably contact the microelectronic workpiece;
a lid proximate to the base, at least one of the base and the lid
being movable relative to the other between a closed position and
an open position, the lid and the base defining a thermal
processing space when in the closed position; a heater positioned
between the base and the lid; a first heat sink positioned
proximate to the heater and movable relative to the heater between
a first position with the first heat sink in thermal contact with
the heater and a second position with the first heat sink spaced
apart from the heater; and a second heat sink positioned proximate
to the first heat sink, the second heat sink being in thermal
contact with the first heat sink when the first heat sink is in the
second position.
12. The apparatus of claim 1, further comprising a shield
positioned at least proximate to the transfer device to at least
restrict access by the user to the transfer device.
13. The apparatus of claim 1 wherein the processing stations are
arranged along a generally straight first line and wherein the
transfer device includes a robot configured to move along a second
generally parallel first line, and wherein the apparatus further
comprises an enclosure disposed around at least one of the
processing stations, the enclosure having a first access aperture
through which the user can manually access all the processing
stations, the enclosure having a second access aperture accessible
to the robot and through which the robot can move microelectronic
workpieces, with the second line being positioned between the first
line and the first and second access apertures.
14. The apparatus of claim 1 wherein all the processing stations of
the apparatus are manually accessible from a single side of the
apparatus.
15. The apparatus of claim 1 wherein the application station
includes a vessel and a support movably positioned proximate to the
vessel and configured to carry the microelectronic workpiece, the
support being moveable between a first transferring position and a
second transferring position spaced apart from the first
transferring position, wherein the support is oriented to receive
the microelectronic workpiece from the transfer device when the
support is in the first transferring position, and wherein the
support is oriented to receive the microelectronic workpiece
manually from the user when the support is in the second
transferring position, the support being configured to selectively
stop its motion at the first and second transferring positions.
16. The apparatus of claim 1, further comprising an enclosure
having a first surface with a first access aperture and a second
surface facing opposite from the first surface and having a second
access aperture, the first and second access apertures alone being
sized and positioned to allow manual access to the transfer device
and all the processing stations for loading the microelectronic
workpieces and/or servicing an interior region of the
enclosure.
17. The apparatus of claim 1, further comprising an enclosure
disposed around at least one of the processing stations, the
enclosure having a first surface facing a first direction and a
second surface facing opposite the first surface, the first surface
having at least one first access aperture, the second surface
having at least one second access aperture, and wherein the
enclosure has a third and a fourth surface extending between the
first and second surfaces and facing in opposite directions from
each other, and wherein the third and fourth surfaces have no
apertures sized to allow manual access to the transfer device or
the processing stations.
18. The apparatus of claim 1 wherein the application station
includes: at least one vessel configured to carry a processing
fluid; one or more electrode supports positioned in the vessel and
configured individually or together to carry a plurality of first
electrodes, the first electrodes being spaced annularly apart from
each other; and a workpiece support positioned at least proximate
to the at least one vessel to carry the microelectronic workpiece
in contact with the processing fluid in the vessel, the workpiece
support being configured to carry at least one second electrode in
contact with the microelectronic workpiece when the workpiece
support carries the microelectronic workpiece, and wherein the
apparatus further comprises a spray station having: a spray vessel
configured to provide a spray fluid; a spray support positioned
proximate to the spray vessel and configured to carry the
microelectronic workpiece; and a spray fluid manifold positioned
within the spray vessel, the spray fluid manifold being coupleable
to a source of spray fluid, the spray fluid manifold having a
plurality of fluid jets directed toward the support to spray the
microelectronic workpiece with the spray fluid.
19. The apparatus of claim 1 wherein the application station is a
first application station configured to enhance and/or repair a
seed layer of the microelectronic workpiece, and wherein at least
one of the processing stations includes a material removal station,
further wherein at least another of the processing stations
includes a second application station configured to apply a blanket
layer of conductive material to the microelectronic workpiece,
still further wherein at least another of the processing stations
includes a thermal processing station configured to anneal a
conductive material of the microelectronic workpiece.
20. The apparatus of claim 1 wherein the application station is
configured to electrophoretically deposit an electrophoretic resist
material on the microelectronic workpiece, and wherein at least one
of the processing stations includes a thermal processing station
having a heater and being configured to receive the microelectronic
workpiece with the electrophoretic resist material and elevate a
temperature of the electrophoretic resist material, and wherein at
least another of the processing stations includes a spray station
having a spray vessel configured to carry a spray fluid, a spray
support positioned proximate to the spray vessel and configured to
carry the microelectronic workpiece, and a spray fluid manifold
positioned within the spray vessel, the spray fluid manifold being
coupleable to a source of spray fluid, the spray fluid manifold
having a plurality of fluid jets directed toward the support to
spray the microelectronic workpiece with the spray fluid.
21. An apparatus for processing microelectronic workpieces,
comprising: a plurality of processing stations, all of the
processing stations of the apparatus being manually accessible to a
user to manually load microelectronic workpieces for processing, at
least one of the processing stations including a material removal
station configured to remove material from the microelectronic
workpieces; an input/output station configured to support at least
one microelectronic workpiece for automatic transfer to and from
the processing stations; and a transfer device positioned proximate
to the input/output station and the processing stations, the
transfer device being automatically movable to transfer
microelectronic workpieces between the input/output station and the
processing stations.
22. The apparatus of claim 21 wherein the material removal station
includes a rotor having a first portion and a second portion facing
toward the first portion, the first and second portions defining a
chamber volume configured to removably receive the microelectronic
workpiece, wherein the first portion includes a first fluid passage
having a first aperture directed into the chamber volume and facing
the second portion, the first aperture being coupleable to a first
fluid source, and wherein the second portion includes a second
fluid passage having a second aperture directed into the chamber
volume and facing the first portion, the second aperture being
coupleable to a second fluid source.
23. The apparatus of claim 21 wherein the material removal station
includes: a rotor having a first portion and a second portion
facing toward the first portion, the first and second portions
defining a chamber volume configured to removably receive the
microelectronic workpiece, wherein the first portion includes a
first fluid passage having a first aperture directed into the
chamber volume and facing the second portion, and wherein the
second portion includes a second fluid passage having a second
aperture directed into the chamber volume and facing the first
portion; a first fluid source coupled to the first aperture to
provide a first fluid to the first aperture; and a second fluid
source coupled to the second aperture to provide a second fluid to
the second aperture, at least one of the first and second fluids
being configured to remove material from the microelectronic
workpiece.
24. The apparatus of claim 21 wherein the material removal station
includes: a spray vessel configured to provide a spray fluid; a
support positioned proximate to the spray vessel, the support being
configured to carry the microelectronic workpiece; a spray fluid
manifold positioned within the spray vessel, the spray fluid
manifold being coupleable to a source of spray fluid, the spray
fluid manifold having a plurality of fluid jets directed toward the
support to spray the microelectronic workpiece with the spray
fluid.
25. The apparatus of claim 21 wherein the processing stations are
arranged along a generally straight first line and wherein the
transfer device includes a robot configured to move along a second
line generally parallel to the first line, and wherein the
apparatus further comprises an enclosure disposed around at least
one of the processing stations, the enclosure having a first access
aperture through which the user can manually access all the process
stations, the enclosure having a second access aperture accessible
to the robot and through which the robot can move microelectronic
workpieces, with the second line being positioned between the first
line and the first and second access apertures.
26. The apparatus at claim 21 wherein the material removal station
includes a vessel and a support movably positioned proximate to the
vessel and configured to carry the microelectronic workpiece, the
support being moveable between a first transferring position and a
second transferring position spaced apart from the first
transferring position, wherein the support is oriented to receive
the microelectronic workpiece from the transfer device when the
support is in the first transferring position, and wherein the
support is oriented to receive the microelectronic workpiece
manually from the user when the support is in the second
transferring position, the support being configured to selectively
stop its motion at the first and second transferring positions.
27. The apparatus of claim 21, further comprising an enclosure
having a first surface with a first access aperture and a second
surface facing opposite from the first surface and having a second
access aperture, the first and second access apertures alone being
sized and positioned to allow manual access to the transfer device
and all the processing stations carried by the chassis for loading
the microelectronic workpieces and/or servicing an interior region
of the enclosure.
28. An apparatus for processing microelectronic workpieces,
comprising: a plurality of processing stations, all of the
processing stations of the apparatus being manually accessible to a
user to manually load microelectronic workpieces for processing, at
least one of the processing stations including a thermal processing
station having a thermal processing space configured to removably
receive the microelectronic workpiece, the thermal processing
station further including a heat transfer unit at least proximate
to the thermal processing space to elevate a temperature of the
microelectronic workpiece; an input/output station configured to
support at least one microelectronic workpiece for automatic
transfer to and from the processing stations; and a transfer device
positioned proximate to the input/output station and the processing
stations, the transfer device being automatically movable to
transfer microelectronic workpieces between the input/output
station and the processing stations.
29. The apparatus of claim 28 wherein the thermal processing
station includes an annealing station, the annealing station
including: a base; a support carried by the base and configured to
removably contact the microelectronic workpiece; a lid proximate to
the base, at least one of the base and the lid being movable
relative to the other between a closed position and an open
position, the lid and the base defining the thermal processing
space when in the closed position; a heater positioned between the
base and the lid; a first heat sink positioned proximate to the
heater and movable relative to the heater between a first position
with the first heat sink in thermal contact with the heater and a
second position with the first heat sink spaced apart from the
heater; and a second heat sink positioned proximate to the first
heat sink, the second heat sink being in thermal contact with the
first heat sink when the first heat sink is in the second
position.
30. The apparatus of claim 28 wherein the thermal processing
station includes: a workpiece support configured to carry the
microelectronic workpiece; and a heat source positioned at least
proximate to the workpiece support to transfer heat to the
microelectronic workpiece.
31. The apparatus of claim 28 wherein the processing stations are
arranged along a generally straight first line and wherein the
transfer device includes a robot configured to move along a second
line generally parallel to the first line, and wherein the
apparatus further comprises an enclosure disposed around at least
one of the processing stations, the enclosure having a first access
aperture through which the user can manually access all the process
stations, the enclosure having a second access aperture accessible
to the robot and through which the robot can move microelectronic
workpieces, with the second line being positioned between the first
line and the first and second access apertures.
32. The apparatus of claim 28, further comprising an enclosure
having a first surface with a first access aperture and a second
surface facing opposite from the first surface and having a second
access aperture, the first and second access apertures alone being
sized and positioned to allow manual access to the transfer device
and all the processing stations for loading the microelectronic
workpieces and/or servicing an interior region of the
enclosure.
33. A method for processing microelectronic workpieces, comprising:
directing an automatic transfer device of a processing tool to move
at least one first microelectronic workpiece to, from or both to
and from a material application station of the tool, the material
application station being one of a plurality of processing stations
of the tool; directing application of material to the at least one
first microelectronic workpiece in the material application
station; and for each of the processing stations of the tool,
manually loading a second microelectronic workpiece into the
processing station and directing processing of each of the manually
loaded second microelectronic workpieces in the processing
stations, wherein directing processing of the second
microelectronic workpieces in the material application station
includes directing the application of material to the second
microelectronic workpieces.
34. The method of claim 33 wherein directing the application of
material to the first and second microelectronic workpieces
includes directing the application of a metal in an electrolytic
process.
35. The method of claim 33 wherein directing the application of
material to the first and second microelectronic workpieces
includes directing the application of an at least partially
insulative material in an electrophoretic process.
36. The method of claim 33 wherein directing the application of
material to the first and second microelectronic workpieces
includes directing the application of a photoresist material in an
electrophoretic process, and wherein the method further comprises:
elevating a temperature of the photoresist material; and rinsing
the microelectronic workpiece.
37. The method of claim 33 wherein directing the application of
material to the first and second microelectronic workpieces
includes directing the application of a solder material in an
electrolytic process.
38. The method of claim 33 wherein at least one of the processing
stations includes a spray station configured to rinse the
microelectronic workpieces, and wherein the method further
comprises rinsing the first and second micorelectronic workpieces
in the spray station.
39. The method of claim 33 wherein the first and second
microelectronic workpieces each include a seed layer and wherein
directing the application of material to the first and second
microelectronic workpieces includes enhancing, repairing or both
enhancing and repairing the seed layer.
40. The method of claim 33 wherein the first and second
microelectronic workpieces include a seed layer and wherein
directing the application of material to the first and second
microelectronic workpieces includes disposing a blanket layer on
the seed layer.
41. The method of claim 33 wherein at least one of the processing
stations includes a material removal station and wherein the method
further comprises removing material from the first and second
microelectronic workpieces in the material removal station.
42. The method of claim 33 wherein at least one of the processing
stations includes a thermal processing station and wherein the
method further comprises elevating a temperature of the first and
second microelectronic workpieces in the thermal processing
station.
43. The method of claim 33 wherein directing the application of
material to the first and second microelectronic workpieces
includes directing the application of solder to the first and
second microelectronic workpieces, and wherein at least one of the
processing stations includes a spray station, further wherein the
method further comprises: directing the automatic transfer device
to load the first microelectronic workpiece into the spray station
to rinse the first microelectronic workpiece after applying the
solder to the first microelectronic workpiece; and manually loading
the second microelectronic workpieces into the spray station to
rinse the second microelectronic workpieces after applying the
solder to the second microelectronic workpieces.
44. The method of claim 33 wherein directing the application of
material to the first and second microelectronic workpieces
includes directing the application of enhancement material to the
first and second microelectronic workpieces, and wherein at least
one of the processing stations includes a material removal station,
another of the processing stations includes a multi-anode material
application station, and yet another of the processing stations
includes a thermal processing station, further wherein the method
further comprises: directing the automatic transfer device to load
the first microelectronic workpiece into the material removal
station to remove material from the first microelectronic
workpiece, into the multi-anode material application station to
apply a first conductive material to the first microelectronic
workpiece, and into the thermal processing station to anneal the
first conductive material; and manually loading the second
microelectronic workpieces into the material removal station to
remove material from the second microelectronic workpieces,
manually loading the second microelectronic workpieces into the
multi-anode material application station to apply a second
conductive material to the second microelectronic workpieces, and
manually loading the second microelectronic workpieces into the
thermal processing station to anneal the second conductive
material.
45. The method of claim 33 wherein directing the application of
material to the first and second microelectronic workpieces
includes directing the application of electrophoretic resist
material to the first and second microelectronic workpieces, and
wherein at least one of the processing stations includes a thermal
processing station, and another of the processing stations includes
a spray station, further wherein the method further comprises:
directing the automatic transfer device to load the first
microelectronic workpiece into the thermal processing station to
elevate the temperature of the electrophoretic resist material on
the first microelectronic workpiece, then into the spray station to
rinse the first microelectronic workpiece; and manually loading the
second microelectronic workpieces into the thermal processing
station to elevate the temperature of the electrophoretic resist
material on the second microelectronic workpieces, then manually
loading the microelectronic workpieces into the spray station to
rinse the second microelectronic workpieces.
46. The method of claim 33 wherein manually loading the second
microelectronic workpieces includes manually loading the second
microelectronic workpieces while the automatic transfer device
carries the at least one first microelectronic workpiece.
47. The method of claim 33 wherein directing an automatic transfer
device includes directing the automatic transfer device to move the
at least one first microelectronic workpiece to, from or both to
and from a support of the material application station while the
support is in a first transferring position and wherein manually
loading a second microelectronic workpiece includes manually
transferring the second microelectronic workpiece to the support of
the material application station while the support is in a second
transferring position spaced apart from the first transferring
position.
48. The method of claim 33 wherein manually loading the second
microelectronic workpieces includes releasably attaching the second
microelectronic workpieces to a wand and moving the wand at least
proximate to a support of the material application station.
49. The method of claim 33 wherein manually loading the second
microelectronic workpieces includes passing the second
microelectronic workpieces over a shield positioned proximate to
the automatic transfer device, with the shield at least restricting
access to the automatic transfer device.
50. A method for processing microelectronic workpieces, comprising:
directing an automatic transfer device of a processing tool to move
at least one first microelectronic workpiece to, from or both to
and from a material removal station of the tool, the material
removal station being one of a plurality of processing stations of
the tool; directing removal of material from the at least one first
microelectronic workpiece in the material removal station; and for
each of the processing stations of the tool, manually loading a
second microelectronic workpiece into the processing station and
directing processing of each of the manually loaded second
microelectronic workpieces in the processing stations, wherein
directing processing of the second microelectronic workpieces in
the material removal station includes directing the removal
material from the second microelectronic workpieces.
51. The method of claim 50 wherein removing material from the first
and second microelectronic workpieces includes directing a first
fluid toward a first surface of the microelectronic workpieces and
directing a second fluid different than the first fluid toward a
second surface of the microelectronic workpieces, with the second
surface of the microelectronic workpiece facing opposite from the
first surface.
52. The method of claim 50 wherein removing material from the first
and second microelectronic workpieces includes bevel etching a
peripheral region of the first and second microelectronic
workpieces.
53. The method of claim 50 wherein removing material from the first
and second microelectronic workpieces includes directing a spray of
fluid through a plurality of spray nozzles and toward the first and
second microelectronic workpieces.
54. A method for processing microelectronic workpieces, comprising:
directing an automatic transfer device of a processing tool to move
at least one first microelectronic workpiece to, from or both to
and from a thermal processing station of the tool, the thermal
processing station being one of a plurality of processing stations
of the tool; directing thermal processing of the at least one first
microelectronic workpiece in the thermal processing station; and
for each of the processing stations of the tool, manually loading a
second microelectronic workpiece into the processing station and
directing processing of each of the manually loaded second
microelectronic workpieces in the processing stations, wherein
directing thermal processing of the second microelectronic
workpieces in the thermal processing station includes directing the
application of heat to the second microelectronic workpieces.
55. The method of claim 54 wherein directing thermal processing of
the first and second microelectronic workpieces includes annealing
a conductive material applied to the first and second
microelectronic workpieces.
56. The method of claim 54 wherein directing thermal processing of
the first and second microelectronic workpieces includes, for each
microelectronic workpiece: bringing each microelectronic workpiece
into thermal contact with a heater; bringing a first heat sink into
thermal contact with the heater to cool the heater and each
microelectronic workpiece; and bringing a second heat sink into
thermal contact with the first heat sink to cool the first heat
sink.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application relates to the following
applications, all of which are incorporated herein by reference.
Additional materials are incorporated by reference in other
sections of this application.
[0002] 1. U.S. patent application Ser. No. ______ titled METHOD AND
APPARATUS FOR MANUALLY AND AUTOMATICALLY
[0003] PROCESSING MICROELECTRONIC WORKPIECES (Attorney Docket No.
29195.8173US) filed concurrently herewith;
[0004] 2. U.S. patent application Ser. No. 09/875,300 titled
TRANSFER DEVICES FOR HANDLING MICROELECTRONIC WORKPIECES WITHIN AN
ENVIRONMENT OF A PROCESSING MACHINE AND METHODS OF MANUFACTURING
AND USING SUCH DEVICES IN THE PROCESSING OF MICROELECTRONIC
WORKPIECES (Attorney Docket No. 29195.8153US) filed Jun. 5,
2001;
[0005] 3. U.S. patent application Ser. No. ______ (Attorney Docket
No. 29195.8153US2), titled MICROELECTRONIC WORKPIECE TRANSFER
DEVICES AND METHODS OF USING SUCH DEVICES IN THE PROCESSING OF
MICROELECTRONIC WORKPIECES, filed concurrently herewith; and
[0006] 4. Published PCT Application No. PCT/US99/14414, titled
AUTOMATED SEMICONDUCTOR PROCESSING SYSTEM, filed Jun. 25,1999.
TECHNICAL FIELD
[0007] The present invention is directed generally to methods and
apparatuses for manually and automatically processing
microelectronic workpieces.
BACKGROUND
[0008] Microelectronic devices, such as semiconductor devices and
field emission displays, are generally fabricated on and/or in
microelectronic workpieces using several different types of
machines ("tools"). Many such processing machines have a single
processing station that performs one or more procedures on the
workpieces. An example of one such tool is a single-chamber Equinox
tool available from Semitool, Inc. of Kalispell, Mont. This tool
can have a shelf on which a container of microelectronic workpieces
is positioned, and a single processing chamber for
electrochemically processing the workpieces. A user can manually
load the workpieces one by one into the chamber, for example, to
test or demonstrate processing recipes or other processing
parameters.
[0009] While the foregoing tool is useful in the engineering
environment, production level processing requires greater
throughput than can be provided by a single-chamber tool.
Accordingly, other processing machines have a plurality of
processing stations that can perform a series of different
procedures on individual workpieces or batches of workpieces. For
example, the LT210C and Spectrum tools, also available from
Semitool, Inc., provide automated processing in a batch and
single-wafer environment, respectively. These tools include robots
that automatically remove the microelectronic workpieces from a
container, move the microelectronic workpieces among the relevant
processing stations, and return the microelectronic workpieces to
the container after processing. While such tools are very effective
for processing large volumes of microelectronic workpieces, they
may not be cost-effective or practical when used in an engineering,
test or demonstration environment.
[0010] One problem with the foregoing tools is that they typically
require a clean room environment in which to operate. Clean rooms
are expensive to build and maintain, and accordingly tool
manufacturers attempt to maximize the number of microelectronic
workpieces processed per hour per square foot of clean room area
occupied by the tool. However, despite efforts to make tools as
compact and efficient as possible, there is continual pressure to
reduce the size of the tool (e.g., the "footprint" of the tool) and
increase the efficiency of the tool. This pressure becomes all the
more intense when device manufacturers require both
engineering/test and production processing capabilities, which in
turn requires even more clean room area.
SUMMARY
[0011] The present invention is directed toward apparatuses and
methods for processing microelectronic workpieces. One aspect of
several embodiments of the invention is a single processing tool
that can be suitable for both manual and automatic operation. By
combining these functions in a single tool, limited clean room area
can be more fully utilized to perform on a wide variety of
functions on the microelectronic workpieces. Furthermore, by
integrating some or all of the tool with a gray room environment,
the space occupied by the tool in a clean room can be reduced.
Therefore, tools in accordance with several embodiments of the
invention can increase the utilization of valuable clean room space
by providing both engineering and production level processing
capabilities in a single, low-footprint device.
[0012] The tool can include stations configured to perform a wide
variety of functions on the microelectronic workpieces. For
example, the tool can include a metrology station for assessing
characteristics of the microelectronic workpieces, a material
application station for applying materials, such as seed layer
enhancement materials or blanket layers. These materials can be
applied with stations having a single electrode (cathode or anode),
a multi-electrode arrangement, or an electroless arrangement. In
other embodiments, the tool can include material removal stations,
such as spray stations configured to direct a spray of fluid toward
the microelectronic workpieces, or capsule stations, configured to
direct two different fluids toward opposite surfaces of the
microelectronic workpieces. In still further embodiments, the tool
can include one or more thermal processing stations, such as an
annealing station configured to anneal metallic materials applied
to the microelectronic workpieces.
[0013] The processing stations can be accessed by an automatic
robot (for automatically transferring microelectronic workpieces to
and/or from the processing station) and by a user (for manually
transferring the microelectronic workpieces). The manual operation
can occur sequentially or simultaneously with the automatic
operation. The tool can include a shield positioned proximate to
the robot to at least restrict access to the robot by the user when
the user manually accesses the processing stations. In one aspect
of the invention, a support that carries the microelectronic
workpieces into the processing station can be positioned above the
shield for manual operation and below the shield for automatic
operation.
[0014] In a more particular embodiment, one or more of the
processing stations can include a vessel, and a support movably
positioned proximate to the vessel and configured to carry the
microelectronic workpiece. The support can be movable between a
first transferring position, and a second transferring position
spaced apart from the first transferring position. The support is
oriented to receive the microelectronic workpiece from a transfer
device when in the first transferring position. The support is
configured to receive the microelectronic workpiece manually from
the user when in the second transferring position.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 is a partially cutaway, isometric view of an
apparatus configured to both manually and automatically process
microelectronic workpieces in accordance with an embodiment of the
invention.
[0016] FIG. 2 is a partially schematic, cross-sectional side view
of an apparatus generally similar to that shown in FIG. 1 with a
support positioned to manually receive a microelectronic workpiece
in accordance with an embodiment of the invention.
[0017] FIG. 3 is a partially schematic, cross-sectional side view
of an apparatus generally similar to that shown in FIGS. 1 and 2
with the support positioned to receive microelectronic workpieces
from an automated transfer device in accordance with an embodiment
of the invention.
[0018] FIG. 4 is an isometric view of a portion of an automated
transfer device in accordance with an embodiment of the
invention.
[0019] FIG. 5 is a partially schematic, cross-sectional side view
of the automated transfer device shown in FIG. 4 taken
substantially along line 5-5.
[0020] FIG. 6 is a partially schematic, cross-sectional side view
of an apparatus generally similar to that shown in FIG. 1 with the
support movable toward and away from a processing station in
accordance with an embodiment of the invention.
[0021] FIG. 7 is a partially schematic, cross-sectional side view
of a portion of a support supported by a guide structure in
accordance with an embodiment of the invention.
[0022] FIG. 8 is a partially schematic rear view of a portion of
the support shown in FIG. 7 supported from the guide structure in
accordance with an embodiment of the invention.
[0023] FIG. 9 is a schematic illustration of a metrology station in
accordance with an embodiment of the invention.
[0024] FIGS. 10A-E are partially schematic illustrations of
portions of microelectronic workpieces having conductive material
disposed thereon in accordance with embodiments of the
invention.
[0025] FIG. 11 is a partially schematic illustration of an
electrochemical processing station in accordance with an embodiment
of the invention.
[0026] FIG. 12 is a partially schematic illustration of an
electrochemical processing station in accordance with another
embodiment of the invention.
[0027] FIG. 13 is a partially schematic illustration of an
electrochemical processing station having multiple electrodes in
accordance with another embodiment of the invention.
[0028] FIG. 14 is a partially schematic illustration of an
electrochemical processing station having multiple electrodes and
flow paths in accordance with another embodiment of the
invention.
[0029] FIG. 15 is a partially schematic illustration of an
electroless processing station in accordance with an embodiment of
the invention.
[0030] FIGS. 16A-B are partially schematic illustrations of a
station configured to remove material from a microelectronic
workpiece in accordance with an embodiment of the invention.
[0031] FIG. 17 is a partially schematic, isometric cutaway view of
a station for spraying microelectronic workpieces in accordance
with an embodiment of the invention.
[0032] FIG. 18 is a partially schematic, cross-sectional view of a
station for thermally processing microelectronic workpieces in
accordance with still another embodiment of the invention.
DETAILED DESCRIPTION
[0033] The following description discloses the details and features
of several embodiments of apparatuses for processing
microelectronic workpieces. The term "microelectronic workpiece" is
used throughout to include a workpiece formed from a substrate upon
which and/or in which microelectronic circuits or components, data
storage elements or layers, and/or micro-mechanical elements are
fabricated. It will be appreciated that several of the details set
forth below are provided to describe the following embodiments in a
manner sufficient to enable a person skilled in the relevant art to
make and use the disclosed embodiments. Several of the details and
advantages described below, however, may not be necessary to
practice certain embodiments of the invention. Additionally, the
invention can include other embodiments that are within the scope
of the claims but are not described in detail with respect to FIGS.
1-18.
[0034] FIGS. 1-8 and the associated discussion below relate
generally to apparatuses suitable for both manually and
automatically processing microelectronic workpieces in accordance
with several embodiments of the invention. More specifically, FIG.
1 is an overall view of one such apparatus and FIGS. 2-3 illustrate
arrangements for manually and automatically transferring,
microelectronic workpieces to a support that positions the
workpieces at a processing station of the apparatus. FIGS. 4-5
illustrate automatic workpiece transfer devices (such as robots),
and FIGS. 6-8 illustrate arrangements for removably carrying the
support from above the processing station.
[0035] FIGS. 9-18 and the associated discussion below relate to
processing stations that can be included in the apparatuses, and
processes that can be completed at the stations. In one
representative process, microelectronic workpieces can be evaluated
at a metrology station (FIG. 9). Material can be applied to the
workpieces and/or enhanced and/or repaired at an electrochemical
deposition station (FIGS. 11-14) or an electroless deposition
deposition station (FIG. 15) to produce layers such as those shown
in FIG. 10. The workpieces can be bevel etched and cleaned at a
capsule station (FIGS. 16A-B) and/or rinsed at a spray station
(FIG. 17), and annealed in a thermal processing station (FIG. 18).
In other embodiments, the apparatus can perform other processes
and/or other process sequences.
[0036] FIG. 1 is a partially cutaway isometric view of an apparatus
100 configured to both manually and automatically process
microelectronic workpieces in accordance with an embodiment of the
invention. In one aspect of this embodiment, the apparatus 100 can
be used in both a research and development setting and a production
setting. For example, in a research and development setting,
individual microelectronic workpieces can be moved manually into
and out of the apparatus 100 for experimenting with and
demonstrating new methods and processes. The same apparatus 100 can
be used in a production setting in which large numbers of
microelectronic workpieces are automatically and efficiently moved
into and out of the apparatus in a routine manner for processing.
As described in greater detail below, the manual and automated
processes can occur sequentially or simultaneously using a single
apparatus 100.
[0037] The apparatus 100 can include a plurality of processing
stations, each configured to perform one or more processes on the
microelectronic workpieces. Some processing stations (such as the
electrochemical deposition, electroless deposition, and capsule
stations) include a vessel configured to provide a fluid in contact
with the workpieces. A support carries the workpieces in contact
with the fluid during processing. The workpieces can be loaded onto
the support either manually or with an automatic transfer
device.
[0038] In one aspect of this embodiment, the apparatus 100 can
include a chassis 101 carrying a plurality of processing stations
150. The chassis 101 can carry eight processing stations 150 as
shown in FIG. 1, or alternatively, the chassis 101 can carry other
numbers of processing stations 150 in other embodiments. The
processing stations 150 can be aligned along a station axis 151
which, in one embodiment, can be generally straight. In alternate
embodiments, the station axis 151 can be curved (for example, in a
horseshoe shape) or can have other shapes. In any of these
embodiments, microelectronic workpieces 114 can be loaded manually
and/or automatically into the processing stations 150 depending
upon the requirements for a particular station 150 at a particular
point in time.
[0039] The apparatus 100 can include an enclosure 102 disposed
around some or all of the chassis 101 and the processing stations
150. The enclosure 102 can have a plurality of surfaces, such as a
front surface 103a, a rear surface 103bfacing opposite from the
front surface 103a, and two side surfaces 103c between the front
surface 103a and the rear surface 103b. The front surface 103a can
be configured to face the user (not shown) and can include a
graphical user interface 107 coupled to a processor 106 to control
the operation of electrical units 105. The electrical units 105 in
turn power and control the components of the apparatus 100.
[0040] The front surface 103a can also include an input/output
station 110 configured to support the microelectronic workpieces
114 for automatic transfer into and out of the processing stations
150. In one aspect of this embodiment, the input/output station can
include two tilting platforms 111, each configured to support a
container 113 that removably carries a plurality of the
microelectronic workpieces 114. The tilting platforms 111 can be
moved from an outwardly tilted position (for receiving the
containers 113) to an upright position (shown in FIG. 1). When the
containers 113 are in the upright position, the microelectronic
workpieces 114 within the containers 113 are accessible to an
automated transfer device 130 through container access openings 112
in the enclosure 102.
[0041] The automated transfer device 130 can include a robot 131
supported by a transfer device support 132. The robot 131 can move
along a transfer device guide path 133 to remove the
microelectronic workpieces 114 from the containers 113 and move the
microelectronic workpieces 114 through the container access opening
112, into the enclosure 102 and to the processing stations 150. The
transfer device 130 can then return the microelectronic workpieces
114 to the same or a different container 113 through the same or a
different access opening 112.
[0042] The front surface 103a can also include a support surface
115 on which the containers 113 can be positioned for manual
loading and unloading. In one aspect of this embodiment, the
support surface 115 can have a removable section 116 that allows
for service access to the transfer device 130. Alternatively, the
transfer device 130 can be accessed from other portions of the
apparatus 100. In either embodiment, the user can place the
containers 113 on the support surface 115 and then individually
remove the microelectronic workpieces 114 from the container 113
and move them into the enclosure 102 through a manual access
opening 104. Accordingly, in one aspect of this embodiment, the
manual access opening 104 can be large enough to allow the user to
manually access any and all of the processing stations 150. In a
further aspect of this embodiment, the manual access opening 104
can be a single, contiguous opening. Alternatively, the manual
access opening 104 can include a plurality of smaller adjacent
openings separated, for example, by vertical dividers that still
allow the user to access all the processing stations 150. In any of
these embodiments, the manual access opening 104 can be positioned
on a single side (such as the front side) of the apparatus 100 so
that the user can manually access all the processing stations 150
from one side of the apparatus 100.
[0043] In another aspect of this embodiment, the manual access
opening 104 can be permanent. Alternatively, the apparatus 100 can
include a panel that can be positioned over the manual access
opening 104 to fully enclose the processing stations 150 and the
transfer device 130, for example, during extended periods of
exclusively automated processing. In a further aspect of this
alternate embodiment, the enclosure 102 can define a "mini" clean
room environment. In any of these embodiments, a shield 134 can be
positioned adjacent to the transfer device 130 to prevent
interference between the transfer device 130 and the user when the
user manually accesses the processing stations 150, as described in
greater detail below with reference to FIG. 2.
[0044] The rear surface 103b of the enclosure 102 faces opposite
the front surface 103a and can provide service access to the
components within the enclosure 102. For example, the processing
stations 150 and associated electrical, mechanical, and chemical
systems can be accessed from service access openings (not visible
in FIG. 1) in the rear surface 103b. In one aspect of this
embodiment, service access to the apparatus 100 can be provided
exclusively via the front surface 103a and the rear surface 103b.
Accordingly, the side surfaces 103c need not have service access
panels and need not be accessible for service after the apparatus
100 is installed. One feature of this embodiment is that the
effective footprint of the apparatus 100 can be reduced compared
with some conventional tools because, for example, the apparatus
100 does not require access aisles along the side surfaces 103c of
the enclosure 102.
[0045] In another embodiment, the apparatus 100 can be positioned
in a clean room environment 120 that is adjacent to a gray room
environment 121. For example, the gray room environment 121 can
include a room separated from the clean room environment 120 by a
wall 122 and can define a generally clean environment that need not
meet clean room standards. The wall 122 can include an aperture
123, and the rear surface 103b of the enclosure 102 can be placed
adjacent to the aperture 123 with the front surface 103a and the
side surfaces 103c projecting into the clean room environment 120.
A seal 124 can be disposed around the periphery of the enclosure
102 at the aperture 123 to maintain the separation between the
clean room environment 120 and the gray room environment 121. This
arrangement can have several advantages. For example, the effective
footprint of the apparatus 100 can be reduced when compared with
conventional arrangements because an aisle need not be provided in
the clean room environment 120 adjacent to the rear surface 103b.
When service is performed on the apparatus 100, most of the
internal components of the apparatus 100 can be accessed from the
gray room environment 121 through the access openings in the rear
surface 103b. Accordingly, many service functions can be provided
without requiring service personnel to enter the clean room
environment 120, which entails the time consuming process of
"suiting up" in clean room suits prior to entry.
[0046] In other embodiments, the apparatus 100 can have other
positional arrangements that also reduce the effective footprint of
the apparatus 100. For example, the apparatus 100 can be moved
rearwardly through the aperture 123 into the gray room environment
121 with at least a portion of (and optionally, the entirety of)
the side surfaces 103c received in the gray room environment 121.
Accordingly, the amount of clean room floor space required by the
apparatus 100 can be less than for other tools having a similar
number of processing stations.
[0047] In one aspect of the foregoing embodiments, the side
surfaces 103c need not be accessible to operate or service the
apparatus 100. Accordingly, the side surfaces 103c need not include
access panels configured for regular access. Alternatively, the
apparatus 100 can be configured to be placed end-to-end with
another processing tool, and at least one of the side surfaces 103c
can have an opening configured to allow the microelectronic
workpieces 114 to be automatically transferred from the apparatus
100 to the adjoining processing tool.
[0048] FIG. 2 is a cross-sectional side view of the apparatus 100
described above with reference to FIG. 1 in accordance with an
embodiment of the invention. In one aspect of this embodiment, at
least one of the processing stations 150 can include a vessel 152
configured to provide a processing fluid, such as an electrolytic
or electroless processing fluid for metal deposition. A support 160
can be positioned proximate to the vessel 152 and can be configured
to receive single microelectronic workpieces 114 and carry the
microelectronic workpieces 114 in contact with the processing
fluid. Alternatively, the support 160 can be configured to
simultaneously carry a plurality of microelectronic workpieces 114.
In still further embodiments, the processing station 150 can have
other configurations and can carry out other functions, such as
rinsing, drying, etching, spraying, measuring, annealing or coating
the microelectronic workpieces 114. Other arrangements for
processing stations 150 and supports 160 are included in U.S. Pat.
Nos. 6,136,163 and 6,139,712, both incorporated herein by
reference. In some of the foregoing embodiments, the processing
stations 150 do not include vessels, and accordingly, the support
160 can carry the microelectronic workpiece 114 relative to other
portions of the processing stations 150.
[0049] In one embodiment, the support 160 can include a head 161
having a receiving surface 162 (such as an annular ring) positioned
to receive the microelectronic workpiece 114. The head 161 can be
supported by a carrier 164 and can rotate relative to the carrier
164 about a head rotation axis 166 (as indicated by arrow A)
between a manual transfer position (shown in FIG. 2) and a process
position. In the manual transfer position, the receiving surface
162 can face upwardly to allow a user to manually place the
microelectronic workpiece 114 on the head 161, or remove the
microelectronic workpiece 114 from the head 161. For example, the
user can manipulate a wand 108 having a vacuum end effector to
place and remove the microelectronic workpiece 114. In other
embodiments, the user can place and remove the microelectronic
workpiece 114 directly by hand or the user can operate other manual
implements. In any of these embodiments, the head 161 can rotate
180 degrees about the head rotation axis 166 from the manual
transfer position to the process position, and can be lowered into
the vessel 152 for processing the microelectronic workpiece
114.
[0050] In a further aspect of this embodiment, the support 160 can
include a support holder 180 that supports the carrier 164 from a
position located above the processing station 150. In one
embodiment, the carrier 164 can be movable relative to the support
holder 180, as described in greater detail below with reference to
FIG. 6. In another embodiment, the carrier 164 can be fixedly
supported from above. In either embodiment, the carrier 164 can
include an elevator 165 that moves the head 161 upwardly and
downwardly as indicated by arrow B. Accordingly, the head 161 can
move along a guide path upwardly to the manual transfer position,
then rotationally and downwardly to the process position.
[0051] In another aspect of this embodiment, the shield 134 can
extend proximate to the support 160 to at least restrict contact
between the user and the transfer device 130 while the user
manually accesses the head 161. For example, the shield 134 can
include an upright portion 135 that extends upwardly to a position
above the transfer device 130. The shield 134 can further include a
transverse portion 136 that extends transversely over the transfer
device 130 toward the support 160. Accordingly, the shield 134 can
at least restrict the user's access to the transfer device 130,
while allowing the user to access the head 161 when the head 161 is
in the manual transfer position. In a further aspect of this
embodiment, the shield 134 can be transparent to allow observation
of the transfer device 130.
[0052] In operation, the user can place a container 113 on the
support surface 115 adjacent to the upright portion 135 of the
shield 134. The user can then remove one of the microelectronic
workpieces 114 from the container 113 in preparation for
transferring the microelectronic workpiece 114 to the support 160.
The support 160 can move upwardly to the manual transfer position.
In one aspect of this embodiment, the head 161 of the support 160
can move upwardly until the receiving surface 162 is at or above
the elevation of the transverse portion 136 of the shield 134. The
user can then reach over the shield 134 to load (or unload) the
microelectronic workpiece 114 while the shield 134 protects the
user from inadvertent contact with the transfer device 130. In one
aspect of this embodiment, if the transfer device 130 attempts to
access the support 160 while the support 160 is in the manual
transfer position, the head 161 will interfere with the motion of
the transfer device 130, providing additional protection for the
user accessing the support 160 manually.
[0053] In one aspect of this embodiment, the user can alternate
between dedicating the apparatus 100 to manual processing and
dedicating the apparatus 100 to automatic processing.
Alternatively, the apparatus 100 can automatically process some
microelectronic workpieces 114 in one or more of the processing
stations 150 while the user simultaneously processes other
microelectronic workpieces 114 manually in processing stations not
concurrently occupied by automatically processed microelectronic
workpieces 114. In either embodiment, the user can enter the
appropriate commands at the user interface 107 to allow manual
operation and/or initiate and direct automatic operation. In either
embodiment, the same apparatus 100 can automatically process
microelectronic workpieces 114 in a manner described below with
reference to FIG. 3.
[0054] FIG. 3 is a cross-sectional side view of the apparatus 100
described above with reference to FIGS. 1 and 2 showing the support
160 located in an automatic transfer position to transfer the
microelectronic workpiece 114 to and/or from the transfer device
130. In one aspect of this embodiment, the automatic transfer
position can be located in a plane beneath the plane of the manual
transfer position (FIG. 2) and beneath the transverse portion 136
of the shield 134. Accordingly, the transfer device 130 can access
the receiving surface 162 of the head 161. The transfer device 130
can include a base 137 supported by the transfer device support 132
for movement transverse to the plane of FIG. 3. The base 137 can
support a lift 138 connected to an arm 139 to move the arm 139
upwardly and downwardly relative to the base 137. Two end effectors
140 (shown as an upper end effector 140a and a lower end effector
140b) can be pivotally attached to the arm 139 to rotate relative
to the arm 139, as described in greater detail below with reference
to FIG. 4. Each end effector 140 can carry a microelectronic
workpiece 114, for example, with a vacuum grip or another
releasable gripping mechanism, and can move toward and away from
the head 161.
[0055] During automatic operation, the elevator 165 of the support
160 can move the head 161 to the automatic transfer position to
receive a microelectronic workpiece 114 from the transfer device
130. After the transfer device 130 places the microelectronic
workpiece 114 on the receiving surface 162 of the head 161, the
elevator 165 can elevate the head 161 slightly to provide vertical
clearance between the head 161 and the vessel 152. The head 161 can
then rotate 180 degrees about the head rotation axis 166 (as
described above with reference to FIG. 2) and the elevator 165 can
lower the head 161 to the process position. The foregoing steps can
be reversed after processing to remove the microelectronic
workpiece 114 from the head 161.
[0056] One feature of the foregoing embodiments described above
with reference to FIGS. 1-3 is that the support 160 can selectively
stop at two different positions for receiving the microelectronic
workpiece 114: a manual transfer position for manually placing and
removing the microelectronic workpieces, and an automatic transfer
position for automatically placing and removing the microelectronic
workpieces 114. The use of different positions for manually and
automatically transferring the microelectronic workpieces 114 can
provide several advantages. For example, when the support 160 is in
the manual transfer position, the user can be shielded from contact
with the automatic transfer device 130, and when the support 160 is
in the automatic transfer position, the transfer device 130 can
access the support 160. The different positions can also provide a
visual cue to the user to indicate to the user when it is
appropriate to manually access the support 160. For example, in one
embodiment, the user can see that when the head 161 is positioned
above the transverse portion 136 of the shield 134, the receiving
surface 162 is accessible for manual loading and/or unloading.
Conversely, when the head 161 is positioned below the transverse
portion 136 of the shield 134, the user can see that the head is
positioned for automatic transfer and is not available for manually
receiving or discharging the microelectronic workpiece 114.
[0057] In one embodiment, the support 160 can move upwardly and
downwardly between the manual transfer position and the automatic
transfer position, and can rotate between the transfer positions
and the process position. In other embodiments, the support 160 can
move along different axes and/or in different manners between any
of these three positions. In still a further embodiment, the manual
transfer position and the automatic transfer position can be
identical. In one aspect of this embodiment, the user can be
protected from inadvertent contact with the transfer device 130 by
other arrangements, for example, a moving shield 134.
[0058] FIG. 4 is an isometric view of a transfer device 130 in
accordance with an embodiment of the invention. In one aspect of
this embodiment, the transfer device 130 can include a robot 131
supported by the transfer device support 132 (FIG. 3) to move
linearly as indicated by arrow C. Accordingly, the robot 131 can be
automatically moved into alignment with the input/output station
110 (FIG. 1) and any of the processing stations 150 (FIG. 1). The
base 137 of the transfer device 130 can support the lift 138 for
upward and downward motion, as indicated by arrow D. The lift 138
can support the arm 139 for rotational motion, as indicated by
arrow E. In one embodiment, the arm 139 can have a single eccentric
projection 146 that extends away from the axis along which the lift
138 moves, and that supports the end effectors 140. Alternatively,
the arm 139 can have multiple projections. The single eccentric
projection 146 can be less likely than multiple projection
arrangements to interfere with surrounding components when the arm
139 rotates. In either embodiment, the end effectors 140 can rotate
independently relative to the arm 139 about a common axis, as
indicated by arrow F.
[0059] In one aspect of this embodiment, the robot 131 can be
coupled to a control unit 141 with a flexible cable 142 (such as a
ribbon cable). The robot can move linearly as indicated by arrow C
without restriction from the cable 142. In a further aspect of this
embodiment a significant portion of the control and power circuitry
required to operate the robot 131 can be positioned in the control
unit 141 rather than on the robot 131 itself. An advantage of this
arrangement is that the robot 131 can be made smaller and can
accordingly require less space in which to move.
[0060] FIG. 5 is a partially schematic, cross-sectional side view
of the robot 131 in accordance with an embodiment of the invention.
In one aspect of this embodiment, the upper end effector 140a is
supported on an inner shaft 144a and the lower end effector 140b is
supported on an outer shaft 144b disposed outwardly from the inner
shaft 144a. The outer shaft 144b can be driven by an outer shaft
belt 145b (extending out of the plane of FIG. 5) which can in turn
be driven by an outer shaft pulley (not visible in FIG. 5). The
inner shaft 144a can be coupled to an inner shaft belt 145a which
can in turn be powered by an inner shaft pulley 143a. Because the
upper end effector 140a is vertically spaced apart from the lower
end effector 140b, each end effector 140 can move without
interfering with the movement of the other. By providing
independent power transmission to each end effector 140, each end
effector 140 can move independently of the other. For example, one
of the end effectors 140 can position a microelectronic workpiece
114 on the support 160 (FIG. 3) while the other end effector 140
retains a microelectronic workpiece 114 for delivery to a different
support 160 or to the input/output device 110 (FIG. 1).
[0061] In other embodiments, the transfer device 130 can have other
configurations. For example, the transfer device 130 can carry a
single microelectronic workpiece 114 or more than two
microelectronic workpieces 114. When the transfer device 130
carries more than one microelectronic workpiece 114, the motion of
each microelectronic workpiece 114 can be at least partially
independent, as described above with reference to FIGS. 4 and 5.
Alternatively, the transfer device 130 can be configured to
automatically move a plurality of microelectronic substrates 114
together in a batch arrangement, for example, with or without a
separate carrier or container configured for use within the
enclosure 102. Further details of aspects of transfer devices in
accordance with other embodiments of the invention are included in
U.S. patent application Ser. No. 09/875,300, filed Jun. 5,
2001,U.S. Patent Application No. ______ (Attorney Docket No.
29195.8153US2), and published PCT Application No. PCT/US99/14414,
all incorporated herein by reference.
[0062] FIG. 6 is a cross-sectional side view of the apparatus 100
with the support 160 arranged to be movable relative to the support
holder 180 in accordance with an embodiment of the invention. As
shown in FIG. 6, the carrier 164 of the support 160 can be
suspended from the support holder 180, with the support holder 180
positioned above the head 161 and the vessel 152 of the processing
station 150. The support holder 180 can include a support guide
path 181 along which the support 160 can move between an
operational position (shown in solid lines in FIG. 6) and an access
position (shown in phantom lines in FIG. 6). In the operational
position, the head 161 can be positioned to have microelectronic
workpieces 114 automatically or manually transferred to it or from
it, as described above. In the access position, the head 161 can be
moved transversely away from the processing station 150 to allow
access to the vessel 152. Accordingly, the user can access the
vessel 152 from the front surface 103a of the enclosure 102 (for
example, for maintenance) while the support 160 is in the access
position.
[0063] In one aspect of this embodiment, the support guide path 181
can be generally straight and transverse to the vertical motion of
the head 161 as it moves relative to the vessel 152. In other
embodiments, the support guide path 181 can have other
configurations. For example, in one alternate embodiment, the
support guide path 181 can be curved.
[0064] In a further aspect of the embodiment shown in FIG. 6, the
entire support 160 can be disconnected from the apparatus 100 and
removed through the rear surface 103b of the enclosure 102 by
moving and/or removing an access panel 184 at the rear surface
103b. Accordingly, the support 160 can be serviced remotely from
the apparatus 100, and the user can have additional access to the
chamber 150 and the vessel 152 through the rear surface 103b of the
enclosure 102. In one aspect of this embodiment, the support holder
180 can include an arrangement of rails for linear movement of the
support 160, as described in greater detail below with reference to
FIGS. 7 and 8. In other embodiments, the support holder 180 can
have other configurations for moving the support 160 relative to
the chamber 150 and/or relative to the apparatus 100. For example,
in other embodiments, the support 160 can pivot about one or more
axes to allow access to the chamber 150.
[0065] FIGS. 7 and 8 are partially schematic illustrations of a
support 160 configured for installation and removal in accordance
with an embodiment of the invention. Referring first to FIG. 7, the
support holder 180 can include a pair of guide rails 182 (one of
which is visible in FIG. 7), each having a linear channel 183
aligned along the support guide path 181. The carrier 164 of the
support 160 can include guide members 174 slidably received in the
channels 183. Accordingly, the carrier 164 can be suspended or at
least partially suspended from the guide rails 182.
[0066] In a further aspect of this embodiment, the carrier 164 can
include features that allow it to be aligned and positioned within
the apparatus 100. For example, the carrier 164 can include a
plurality of locator balls 170, shown as an upper locator ball 170a
and a pair of lower locator balls 170b (one of which is visible in
FIG. 7). The apparatus 100 can include corresponding features
positioned to receive and align the locator balls 170. For example,
the apparatus 100 can include an upper support beam 168a having an
upper support bracket 169 configured to receive the upper locator
ball 170a. The apparatus 100 can further include a lower support
beam 168b having two lower support brackets 175, including a left
lower support bracket 175a and a right lower support bracket 175b
(not visible in FIG. 7), positioned to receive the lower locator
balls 170b.
[0067] In one embodiment, the upper support bracket 169 can have a
positioning surface 171 arranged to contact the upper locator ball
170a. The upper support bracket 169 can be adjustable forward and
aft, as indicated by arrow G. Upon installation, the forward and
aft position of the upper support bracket 169 can be adjusted until
the carrier 164 is vertically aligned. Once the carrier 164 is
properly aligned, a locking mechanism 172 having a latch 173 can be
actuated to secure the upper locator ball 170a against the
positioning surface 171. To move or remove the carrier 164, the
locking mechanism 172 is released, allowing the carrier 164 to
pivot rearwardly about the lower locator ball 170b, as indicated by
arrow H and as shown in dashed lines in FIG. 7. After the carrier
164 has pivoted rearwardly as shown in FIG. 7, the lower locator
balls 170b can be removed from the lower support brackets 175 and
the carrier 164 can be moved further aft to the access position,
and/or removed from the apparatus 100, as described above with
reference to FIG. 6.
[0068] FIG. 8 is a partially schematic, partially broken rear view
of a portion of the support 160 supported in the apparatus 100 at
least in part by the guide members 174. In one aspect of this
embodiment, the guide members 174 can be slidably received in the
guide rails 182. In an alternate embodiment, the guide members 174
can include wheels that roll along the guide rail 182, and in other
embodiments, the apparatus 100 can include other arrangements that
allow for relative movement between the support 160 and the support
holder 180. In any of these embodiments, the support carrier 164
can include an electrical terminal 163 configured to releasably
receive an electrical cable (not shown) and a pneumatic terminal
167 configured to releasably receive a pneumatic conduit (not
shown). The electrical cable and the pneumatic conduit can be
detached from the carrier 164 prior to removing the support 160
from the apparatus 100.
[0069] In one aspect of an embodiment of apparatus 100 shown in
FIG. 8, the lower support brackets 175 (shown as the left lower
support bracket 175a and the right lower support bracket 175b) can
be configured to accommodate transverse alignment of the carrier
164. For example, the left support bracket 175a can include a
generally flat receiving surface 176 along which a corresponding
one of the lower locator balls 170b can slide. The right support
bracket 175b can include a receiving cradle 177 configured to
receive the other lower locator ball 170b and at least restrict
movement of the other lower locator ball 170b to provide additional
support for the carrier 164. Accordingly, the receiving cradle 177
can be adjusted laterally as indicated by arrow I using adjustment
screws 178.
[0070] One feature of an embodiment of the apparatus 100 described
above with reference to FIGS. 6-8 is that the support 160 can be
supported by a support holder 180 that allows for movement of the
support 160 while the weight of the support 160 is still borne by
the apparatus 100. Accordingly, it can be easier to reposition the
support 160 while accessing the processing station 150 below.
Another advantage of this feature is that it can be easier to
remove the support entirely from the apparatus 100 through the rear
surface 103b of the apparatus 100.
[0071] Another feature of an embodiment of the support 160 is that
it is carried from a position located above the processing station
150. One advantage of this feature is that the support 160 need not
occupy space below the head 161 and adjacent to the processing
station 150. Instead, this space can be left free (for example, to
access the processing station 150) or can be occupied by additional
support equipment for the processing station 150. Another advantage
of this arrangement is that the electrical cable between the
support 160 and the electrical units 105 that provide power and
control signals to the support 160 can be shorter because the
support 160 is positioned closer to the electrical units 105. Still
another advantage of this arrangement is that the electrical cable
can be positioned entirely above the processing station 150 when it
is coupled to the support carrier 164. Accordingly, the likelihood
for contact between the electrical cable and the chemicals
contained in the processing station 150 can be reduced and/or
eliminated.
[0072] FIGS. 9-18 illustrate several details of processing stations
that can be included in tools generally similar to those described
with reference to FIGS. 1-8. A wide variety of microelectronic
workpiece processing techniques may be performed simultaneously
and/or sequentially using various combinations of processing
stations such as those described below. In further embodiments, the
processing stations can have characteristics in addition to or in
lieu of those described below for providing different and/or
additional functions. In one representative process,
microelectronic workpieces can be evaluated at a metrology station
(FIG. 9). Material can be applied to the workpieces and/or enhanced
and/or repaired at an electrochemical deposition station (FIGS.
11-14) or an electroless deposition deposition station (FIG. 15) to
produce layers such as those shown in FIG. 10. The workpieces can
be bevel etched and cleaned at a capsule station (FIGS. 16A-B)
and/or rinsed at a spray station (FIG. 17), and annealed in a
thermal processing station (FIG. 18). In other embodiments, the
apparatus can perform other processes and/or other process
sequences.
[0073] Metrology Station
[0074] FIG. 9 is a schematic illustration of a metrology station
900 that can be included as one or more of the processing stations
150 described above with reference to FIGS. 1-8. In one aspect of
this embodiment, the metrology station 900 can include a base 910
having one or more supports 920 configured to removably support the
microelectronic workpiece 114. A detector 930 can be operatively
coupled to the microelectronic workpiece 114 while the
microelectronic workpiece 114 is carried by the supports 920. The
detector 930 can be configured to detect characteristics of
portions of the microelectronic workpiece 114. For example, the
detector 930 can be configured to detect a uniformity of a
conductive layer (such as a seed layer or a blanket layer) or other
conductive feature on the microelectronic workpiece 114. In one
aspect of this embodiment, the detector 930 can use sheet
resistance or capacitance to determine the thickness of the
conductive layer. Alternatively, the detector 930 can use optical
or thermal techniques to determine selected characteristics of the
microelectronic workpiece 114. In one alternate embodiment, the
detector 930 can include a laser based, non-constant metrology
system in which an emitted laser induces an acoustic response in
the layer of the microelectronic workpiece 114. The acoustic
response is then correlated to the thickness of the layer. This is
known as an impulsive stimulated thermal scattering (ISTS) system.
One such system is manufactured by Phillips Analytical, Inc. of
Natick, Massachusetts under the model name "Impulse" or "Emerald."
Another suitable metrology unit is manufactured by Rudolph, Inc. of
Flanders, New Jersey, under the model name "Metapulse."
[0075] In any of the foregoing embodiments, the detector 930 can be
operatively coupled to an analyzer 940 to analyze and/or otherwise
process the data received by the detector 930. The analyzer 940 can
be coupled to a controller 950 which can in turn be coupled with a
link 960 to one or more of the other processing stations 150 of the
tool 100 (FIG. 1). Accordingly, data obtained at the metrology
station 900 can be used to influence processes conducted at other
processing stations, as described in greater detail below.
[0076] In one embodiment, the metrology station 900 can be used in
a "feedforward" mode. Accordingly, the results obtained at the
metrology station 900 can be used to influence and/or control
subsequent processes performed on the microelectronic workpiece 114
in a manner that accounts for the unique characteristics of that
particular microelectronic workpiece 114. Alternatively, the
metrology station 900 can be used in a "feed-back" mode. In this
mode, the microelectronic workpiece 114 can be analyzed after a
selected process is performed on the microelectronic workpiece 114,
and the results can be used to influence the manner in which that
same process is performed on other microelectronic workpieces.
Examples of feed-forward and feed-back processes are described in
greater detail below.
[0077] In one feed-forward mode of operation, the recipe for one or
more downstream processes can be modified based on the results
obtained at the metrology station 900. Alternatively, or
additionally, the sequence with which subsequent processes are
carried out can be modified based on the metrology results. For
example, if the thickness or uniformity of a seed layer of the
microelectronic workpiece 114 is outside acceptable limits, the
microelectronic workpiece 114 can be delivered to a seed layer
enhancement station (described in greater detail below with
reference to FIGS. 10A-15) before being delivered to an
electroplating station (also described in greater detail below with
reference to FIGS. 10A-15). Alternatively, if the seed layer is so
far out of tolerance that it cannot be repaired or enhanced in the
seed layer enhancement station, the microelectronic workpiece 114
can be delivered to a material removal station (described in
greater detail below with reference to FIGS. 16A-17) in which the
microelectronic workpiece 114 can be etched. The microelectronic
workpiece 114 can then be returned to a seed layer application
station, such as a physical vapor deposition (PVD) apparatus
external to the apparatus 100.
[0078] In other embodiments, the results obtained at the metrology
station 900 can be used to influence not only where the
microelectronic workpiece 114 goes after leaving the metrology
station 900, but also aspects of the process performed on the
microelectronic workpiece 114 at the next processing station. For
example, the process parameters used during deposition and/or
alteration of blanket metal layers, blanket dielectric layers,
patterned metal layers, and patterned dielectric layers can be
established, altered, adjusted, or otherwise controlled based on
the results obtained at the metrology station 900. In one
embodiment, an intentional variation in one parameter (e.g., film
thickness) can be introduced in order to compensate for another
non-uniformity (e.g., line width) to produce uniform electrical
results.
[0079] In another embodiment, the user can assess the results
obtained at the metrology station 900 and decide to stop subsequent
processes until issues associated with the prior processes are
resolved. For example, a blanket layer electroplating process can
be stopped when seed layer thicknesses are found to be below
acceptable tolerances. Alternatively, the user can continue the
subsequent processing (e.g., the electroplating process) and adjust
the subsequent process steps or process parameters based upon the
output from the metrology station 900. For example, the user can go
forward with the electroplating process, but automatically adjust
the process recipe to achieve acceptable plating uniformity and
thicknesses, again based on the results obtained at the metrology
station 900.
[0080] In a feed-back mode of operation, the metrology station 900
can be used to alter processes normally conducted before the
microelectronic workpiece 114 arrives at the processing station
900. For example, the microelectronic workpiece 114 can be placed
in the metrology station 900 after an electrochemical deposition
(ECD) process to assess the uniformity or other characteristic of
the material applied during the ECD process. If the uniformity or
other characteristic of the applied material is found to be out of
tolerance, the process recipe conducted at the ECD station can be
adjusted prior to processing other microelectronic workpieces 114
having similar initial characteristics. For example, if it is
determined at the processing station 900 that microelectronic
workpieces 114 having an initial seed layer with fixed, known
characteristics return from an ECD station with unacceptable
results when process 1 is followed, but acceptable results if
process 2 is followed, then the controller 950 can automatically
direct the ECD station to use process 2 when other microelectronic
workpieces 114 having similar initial seed layers are to be
processed.
[0081] In other embodiments, the metrology station 900 can have
other arrangements. Examples of other embodiments for the
processing station 900 are included in International Application
PCT/US01/21579 (Attorney Docket No. 29195.8117WO), filed Jul. 9,
2001 and incorporated herein in its entirety by reference. In any
of these embodiments, the controller 950 can be used to control
processes conducted at any of the stations within the tool 100
(FIG. 1), or alternatively, the controller 950 can be operatively
coupled to devices external to the tool 100 to control processes
conducted therein. For example, material may be removed from the
microelectronic workpiece 114 in a chemical-mechanical
planarization (CMP) apparatus that is positioned external to the
tool 100.
[0082] Material Application Stations
[0083] FIGS. 10A-15 illustrate stations suitable for applying
materials to the microelectronic workpiece 114. These stations
include electrochemical deposition (ECD) stations, which can apply
materials in an electrochemical process, and electroless stations,
which can apply materials in a non-electrical, chemical process.
ECD stations (described below with reference to FIGS. 11-14) can be
used to apply conductive materials, such as copper, aluminum,
platinum, solder or gold. The conductive materials can be applied
as a new blanket layer or to enhance or repair an existing seed
layer. Accordingly, any of these stations can function as a seed
layer repair/enhancement station. Examples of processes and
solutions suitable for carrying out such functions are included in
International Application No. PCT/US99/06306, filed Mar. 22, 1999
and incorporated herein in its entirety by reference.
Alternatively, (for example, by reversing the polarity applied to
electrodes during metal deposition), these stations can be used to
apply insulative materials, in an electrophoretic process. The
electroless stations (described below with reference to FIG. 15)
can also be used to apply conductive materials, such as blanket
layers or seed layer repair/enhancement materials, without the
application of electrical currents.
[0084] FIGS. 10A-10E illustrate sample processes that can be
conducted with material application stations in accordance with
embodiments of the invention. Beginning with FIG. 10A, the
microelectronic substrate 114 can include a feature such as a
trench 1012 that is to be filled with a metal or other conductive
material. A thin barrier layer 1010 can be deposited on the
microelectronic substrate 114 and in the trench 1012.
Alternatively, the barrier layer 1010 can be deposited over a
dielectric material, such as silicon dioxide. In either embodiment,
the barrier layer 1010 can include titanium nitride, tantalum
nitride, or another material that can act to prevent a conductive
material subsequently disposed in the trench 1012 from migrating
into other features of the microelectronic substrate 114. The
barrier layer 1012 can be deposited using known techniques, such as
chemical vapor deposition (CVD) or physical vapor deposition
(PVD).
[0085] Referring now to FIG. 10B, an ultra-thin metallic seed layer
1011 can be disposed on the barrier layer 1010. In one embodiment,
the ultra-thin seed layer 1011 can include copper, and in other
embodiments, the ultra-thin seed layer 1011 can include other
materials. In either embodiment, the ultra-thin seed layer 1011 can
be deposited using CVD, PVD or other techniques.
[0086] In one aspect of this embodiment, the ultra-thin seed layer
1011 can be deposited to a thickness of only about 50 angstroms to
about 500 angstroms. Accordingly, voids 1013 or other
nonuniformities may remain in the seed layer 1011 after it is
formed. As shown in FIG. 10C, the seed layer 1011 can be enhanced
by electrochemically applying additional conductive enhancement
material 1014 on the ultra-thin seed layer 1011 to fill in the
voids 1013 (FIG. 10B). Accordingly, the barrier layer 1010 can be
completely or nearly completely covered with conductive
material.
[0087] As shown in FIG. 10D, a blanket layer 1015 can be deposited
electrochemically onto the enhancement material 1014 and the
ultra-thin seed layer 1011 to fill in the trench 1012. After the
trench 1012 has been filled, the portions of the barrier layer
1010, the ultra-thin seed layer 1011, the enhancement material
1014, and the blanket layer 1015 located above the trench 1012 can
be removed, leaving a line or via 1066, as shown in FIG. 10E. The
foregoing process steps can be repeated to build layer upon layer
of conductive structures in the microelectronic substrate 114.
[0088] Overall Station Arrangement
[0089] FIG. 11 illustrates an embodiment of an
electrochemical-processing station 1100 having a support 1160 and a
vessel assembly 1152 configured for disposing enhancement material
and/or blanket layers as described above with reference to FIGS.
10A-10E. The support 1160 can include a spin motor 1161, a rotor
1162 coupled to the spin motor 1161, and a contact assembly 1170
carried by the rotor 1162. The contact assembly 1170 can be
configured to make electrical contact with either the front side or
the back side of the microelectronic workpiece 114. The rotor 1162
can have a backing plate 1163 and a seal 1164. The backing plate
1163 can move transverse to the microelectronic workpiece 114
(arrow T) between a first position in which the backing plate 1163
contacts a backside of the workpiece 114 (shown in solid lines in
FIG. 11) and a second position (shown in broken lines in FIG. 11)
in which it is spaced apart from the backside of the workpiece 114.
The contact assembly 1170 can have a support ring 1172, a plurality
of contacts 1173 carried by the support ring 1172, and a plurality
of shafts 1171 extending between the support ring 1172 and the
rotor 1162. The contacts 1173 can be ring-type spring contacts or
other types of contacts that are configured to engage a portion of
the seed-layer on the workpiece 114. Commercially available support
1160 and contact assemblies 1170 can be used in the station 1100.
Particular suitable support 1160 and contact assemblies 1170 are
disclosed in U.S. Pat. Nos. 6,228,232 and 6,080,691; and U.S.
application Ser. Nos. 09/385,784; 09/386,803; 09/386,610;
09/386,197; 09/501,002; 09/733,608; and 09/804,696, all of which
are herein incorporated by reference.
[0090] The vessel assembly 1152 can include an outer vessel 1153
(shown schematically in FIG. 11) and an inner vessel 1154 (also
shown schematically in FIG. 11) positioned within the outer vessel
1153. The inner vessel 1154 carries at least one electrode (not
shown in FIG. 11) and directs a flow of electroprocessing solution
to the workpiece 114. The electroprocessing solution, for example,
can flow over a weir (arrow W) and into the outer vessel 1153,
which captures the electroprocessing solution and sends it back to
a tank. Several embodiments of inner vessels 1154 are shown and
described in detail with reference to FIGS. 12-14.
[0091] In operation, the support 1160 holds the workpiece 114 at a
workpiece-processing site of the inner vessel 1154 so that at least
a plating surface of the workpiece 114 engages the
electroprocessing solution. An electrical field is established in
the solution by applying an electrical potential between the
plating surface of the workpiece 114 (via the contact assembly
1170) and one or more electrodes in the inner vessel 1154. For
example, the contact assembly 1170 can be biased with a negative
potential relative to the electrode(s) in the inner vessel 1154 to
plate materials onto the workpiece. Alternatively, the contact
assembly 1170 can be biased with a positive potential relative to
the electrode(s) in the inner vessel 1154 to (a) de-plate or
electropolish plated material from the workpiece 114 or (b) deposit
other materials (e.g., electrophoretic resist). In general,
therefore, materials can be deposited on or removed from the
workpiece 114 with the workpiece 114 acting as a cathode or an
anode depending upon the particular type of material used in the
electrochemical process.
[0092] Single Electrode Station
[0093] FIG. 12 is a cross-sectional side view of a vessel assembly
1252 having an inner vessel 1254 disposed within an outer vessel
1253 in accordance with an embodiment of the invention. In one
aspect of this embodiment, the inner vessel 1254 has a single
electrode 1230 for electrochemically processing the microelectronic
workpiece 114 (shown without the support 1160 in FIG. 12). In other
embodiments, the vessel assembly 1252 can include multiple
electrodes, as described below in greater detail with reference to
FIGS. 13-14.
[0094] In one aspect of the embodiment shown in FIG. 12, the outer
vessel 1253 can carry an exhaust ring 1220 which in turn carries
the inner vessel 1254 disposed annularly inwardly from the exhaust
ring 1220. The inner vessel 1254 can include an inner sidewall 1256
connected to an outer sidewall 1255 with a web 1257. The outer
sidewall 1255 can include exhaust ports 1221 which allow gases
generated within the inner vessel 1254 to pass radially outwardly.
One or more exhaust exits 1222 in the exhaust ring 1220 collect the
gas and remove it from the vessel assembly 1252.
[0095] The inner vessel 1254 can be coupled to a fluid delivery
conduit 1232 through which an electrolytic processing fluid enters,
as indicated by arrows J. The electrolytic fluid can pass upwardly
through the fluid delivery conduit into the inner vessel 1254 and
over a weir 1259. Accordingly, the weir 1259 can establish the
level of the electrolytic fluid in the vessel assembly 1252 for
contacting the microelectronic workpiece 114. The electrolytic
fluid can pass over the weir 1259 and through openings 1258 in the
web 1257 into a region between the inner vessel 1254 and the outer
vessel 1253. Skirts 1240 separated by slots 1241 can guide the
fluid downwardly toward a process outlet 1242, while reducing the
tendency for the fluid to splash, which can create undesirable
bubbles in the fluid. The fluid can be replaced or recycled after
passing through the process outlet 1242. An overflow outlet 1243
provides protection against an overflow of the electrolytic
fluid.
[0096] The electrode 1230 is positioned within the inner vessel
1254 and can be supported on the fluid delivery conduit, for
example, with one or more bayonet-type fittings. In one aspect of
this embodiment, the electrode 1230 can be attached to an electrode
shield 1231 which protects the lower surface of the electrode 1230
and which attaches to the fluid delivery conduit 1232 with a first
bayonet-type fitting. The electrode shield 1231 can in turn support
a diffuser 1235 with a second bayonet-type fitting. The diffuser
1235 can condition the flow of the electrolytic fluid as it
approaches the microelectronic workpiece 114. In a further aspect
of this embodiment, electrical current can be supplied to the
electrode 1230 by a cable 1233 housed in a sleeve 1234 that passes
through the fluid delivery conduit 1232. The electrode 1230 can
operate as either an anode (e.g., for plating the microelectronic
workpiece 114) or a cathode (e.g., for deplating the
microelectronic workpiece 114). The vessel assembly 1252 can
further include an auxiliary electrode 1230a which can be
configured to "thieve" conductive material that might otherwise
plate onto the contact assembly 1170 (FIG. 11). Further details of
the foregoing and other embodiments of the vessel assembly are
included in U.S. Pat. Nos. 6,228,232, 6,270,647, and 6,080,291, all
incorporated herein in their entireties by reference.
[0097] Multiple Electrode Stations
[0098] FIGS. 13 and 14 schematically illustrate multi-electrode
processing stations for electrochemically and/or
electrophoretically depositing and/or removing materials onto
microelectronic workpieces in accordance with further embodiments
of the invention. One feature of the multi-electrode stations is
that the electrical current applied to each electrode can be
individually controlled to more accurately control the deposition
or removal process occurring at the microelectronic workpiece 114.
For example, the current applied to these electrodes can be
adjusted to account for initial non-uniformities in the
microelectronic workpiece 114, or can be tailored to deliberately
form a non-uniform deposited layer.
[0099] Referring first to FIG. 13, a vessel assembly 1352 can
include an inner vessel 1354 disposed annularly within an outer
vessel 1353. The inner vessel 1354 can be supplied with an
electrolytic processing fluid through a fluid inlet 1332. The fluid
can flow through the inner vessel 1354 in a manner described in
greater detail below, and can exit the inner vessel 1354 over a
weir 1359. The fluid can then proceed through a helical drain
channel 1340 positioned between the inner vessel 1354 and the outer
vessel 1353 to an outlet 1342, from which the fluid can be disposed
of or recycled.
[0100] Fluid entering the fluid inlet 1332 can proceed radially
outwardly through a disk-shaped acceleration channel 1331, then
upwardly through a generally U-shaped fluid flow region 1332
positioned annularly within the inner vessel 1354. The U-shaped
fluid flow region 1332 forms an antechamber 1344 through which the
fluid flows before entering a main fluid flow chamber 1345 at the
center of the inner vessel 1354. A gas channel 1343 at the top of
the U-shaped fluid flow region 1332 can collect gas bubbles in the
entering fluid and direct the gas bubbles radially outwardly to the
region between the inner vessel 1354 and the outer vessel 1353.
Accordingly, the likelihood for introducing gas bubbles at the
process surface of the microelectronic workpiece 114 (where they
can adversely affect the electrochemical deposition process) can be
reduced. The fluid proceeds downwardly through the U-shaped fluid
flow region 1332 to a high pressure region 1333, then through a
diffuser 1335 to a nozzle assembly 1334.
[0101] The nozzle assembly 1334 can include a plurality of nozzles
1336 positioned to direct the fluid in a generally uniform manner
into the main fluid flow chamber 1345.
[0102] The main fluid flow chamber 1345 can be defined in part by a
contoured sidewall 1338 that extends upwardly away from the nozzle
assembly 1334. The contoured sidewall 1338 can be shaped to
smoothly transition the flow exiting the nozzle assembly 1334 from
being directed generally radially inwardly to being directed
generally axially upwardly. The contoured sidewall 1338 can
transition either abruptly or smoothly to a slanted sidewall 1339
that directs at least a portion of the fluid flow radially
outwardly. The resulting velocity distribution can produce a free
surface that is initially dome-shaped before the microelectronic
workpiece 114 is brought into contact with the fluid. An advantage
of this arrangement is that the microelectronic workpiece 114 can
force any air between the free surface and the microelectronic
workpiece 114 radially outwardly where it is less likely to form
bubbles at the process surface of the microelectronic workpiece
114.
[0103] In one aspect of this embodiment, the inner vessel 1354 can
include a plurality of electrodes 1330 (shown in FIG. 13 as
electrodes 1330a-e). For example, the electrodes 1330 can include a
central anode 1330e positioned in the main fluid flow chamber 1345.
The central anode 1330e can be positioned proximate to a plurality
of venturi flow paths 1341 which connect with the acceleration
channel 1331. Fluid flow passing through the acceleration channel
1331 can draw fluid downwardly away from the central anode 1330e
and can sweep gas bubbles away from the surface of the central
anode 1330e. The flow passing through the venturi flow path can
also control the uniformity of the flow passing upwardly through
the main fluid flow chamber 1345 and can accordingly control the
uniformity of the flow impinging on the central portion of the
microelectronic workpiece 114.
[0104] The inner vessel 1354 can further include a plurality of
generally annularly shaped electrodes (four are shown in FIG. 13 as
electrodes 1330a-d). If the microelectronic workpiece 114 is small
and does not extend radially outwardly beyond the contoured
sidewall 1338, no power need be applied to the annular anodes
1330a-d. If the microelectronic workpiece 114 extends radially
beyond the contoured sidewall 1338, one or more of the annular
electrodes 1330a-dcan be powered to provide plating at the outer
portions of the microelectronic workpiece 114. The power applied to
the annular electrodes 1330a-dcan be the same in one embodiment, or
alternatively, each electrode 1330a-dcan receive a different power
depending upon the initial characteristics of the microelectronic
workpiece 114 and/or the result to be obtained by the
electrochemical deposition process. The electrochemical deposition
rate can also be controlled by the weir 1359, which can include a
transverse portion 1358 extending radially inwardly over a portion
of some or all of the annular electrodes 1330a-d. The weir 1359,
along with the transverse portion 1358, can be easily removed from
the rest of the inner vessel 1354 to tailor the extent to which the
transverse portion 1358 shields the microelectronic workpiece
114.
[0105] In other embodiments, the vessel assembly 1352 can have
other arrangements. Further details of the arrangement shown in
FIG. 13, as well as alternate arrangements, are included in
International Application No. PCT/US00/10210, filed Apr. 13, 2000
and incorporated herein in its entirety by reference.
[0106] FIG. 14 is a schematic illustration of a multi-electrode
vessel assembly 1452 in accordance with another embodiment of the
invention. In one aspect of this embodiment, the vessel assembly
1452 can include an inner vessel 1454 disposed annularly inwardly
within an outer vessel 1453. A helical drain channel 1440 between
the inner vessel 1454 and the outer vessel 1453 can receive fluid
overflowing the inner vessel 1454 and guide the fluid toward a
fluid outlet 1444 in a manner generally similar to that described
above with reference to FIG. 13. Fluid can enter the inner vessel
1454 through a primary fluid inlet 1432a and a secondary fluid
inlet 1432b. The primary fluid inlet 1432a is coupled to a primary
flow channel 1478 that directs a portion of the fluid within the
inner vessel 1454 to a primary flow guide 1475. The primary flow
guide 1475 can include nozzles or apertures 1479 that direct the
flow toward the central axis of the inner vessel 1454. The flow can
proceed upwardly from the primary flow guide 1475 toward the
microelectronic workpiece 114.
[0107] The secondary fluid inlet 1432 can be coupled to a
distributor 1470 that directs the secondary fluid to a plurality of
electrodes. In one aspect of this embodiment, the inner vessel 1454
can include four electrodes 1430 (shown in FIG. 14 as electrodes
1430a-1430d). In one aspect of this embodiment, the electrodes 1430
can be housed in a field shaping unit 1476 having a corresponding
plurality of electrode compartments 1471 (shown as compartments
1471a-1471d) separated by partitions 1472. The distributor 1470
directs the secondary fluid into each compartment 1471 via a
corresponding plurality of distributor channels 1470 (shown as
distributor channels 1470a-1470d). Accordingly, the secondary fluid
can proceed through the distributor 1470, past the electrodes 1430,
and upwardly toward the microelectronic workpiece 114. The effect
of the field shaping unit 1476 on the electrical field produced by
the electrodes 1430 is as if the electrodes were positioned at the
exits of each compartment 1471, as shown by virtual electrode
positions 1480a-1480d.
[0108] In one aspect of an embodiment of the vessel assembly 1452
shown in FIG. 14, each compartment 1471 can have an aperture 1474
through which fluid and gas bubbles can pass. Accordingly, gas
bubbles trapped in each compartment 1471 can proceed radially
outwardly through the apertures 1471 of each compartment until they
exit the inner vessel 1454. In another aspect of this embodiment,
each compartment 1471 can include an interface member 1477 (which
can be eliminated in an alternate embodiment). In one embodiment,
the interface members 1477 can include a filter configured to trap
air bubbles and other particulates, while allowing the secondary
fluid to pass toward the microelectronic workpiece 114. In another
embodiment, the interface members 1477 can include ion membranes
that allow ions to pass toward the microelectronic workpiece 114,
while preventing or substantially preventing the secondary fluid
from passing toward the microelectronic workpiece 144. Instead, the
secondary fluid can pass through the apertures 1474 and out of the
inner vessel 1454 via the helical drain channel 1440.
Alternatively, the ion membrane can allow the fluid as well as ions
to pass through.
[0109] In one embodiment in which the primary and secondary fluids
are separated, the primary fluid (which contacts the
microelectronic workpiece 114) can be a catholyte and the secondary
fluid (which does not contact the microelectronic workpiece 114)
can be a separate anolyte. An advantage of this arrangement is that
it can eliminate the consumption of additives at the anodes and
thus the need to replenish the additives as often as is required in
a conventional arrangement. This feature, in combination with the
"virtual anode" aspect of the vessel assembly 1452 can reduce the
need to "burn-in" anodes, which is typically required to ensure a
consistent black film over the anodes to provide a predictable
current distribution. Instead, the current distribution can be
controlled by the configuration of the field shaping unit 1476.
[0110] In other embodiments, the vessel assembly 1452 can have
other arrangements. Further details of aspects of the embodiment
described above with reference to FIG. 14 and alternate
arrangements are included in International Application No.
PCT/US00/10120, filed Apr. 13, 2000, incorporated herein by
reference, and the following U.S. Patent Applications, all of which
are incorporated herein by reference: 09/872,151 (Attorney Docket
No. 29195.8158US), filed May 31, 2001; 09/804,696 (Attorney Docket
No. 29195.8119US), filed Mar. 12, 2001; 09/804,697 (Attorney Docket
No. 29195.8120US), filed Mar. 12, 2001; 09/875,365 (Attorney Docket
No. 29195.8156US) filed Jun. 5, 2001; 09/849,505 (Attorney Docket
No. 29195.8157US1) filed May 4, 2001; 09/866,391 (Attorney Docket
No. 29195.8157US2) filed May 24, 2001; 09/866,463 (Attorney Docket
No. 29195.8157US3), filed May 24, 2001; and 10/008,636 (Attorney
Docket No. 29195.8172US) filed Dec. 5, 2001.
[0111] Electroless Processing Station
[0112] FIG. 15 is a partially schematic, cross-sectional side view
of a processing station 1550 configured for electroless processing
in accordance with an embodiment of the invention. In one aspect of
this embodiment, the processing station 1550 can include a vessel
assembly 1552 having a processing portion 1554 configured to
receive an electroless processing fluid through a supply valve
assembly 1580a. A fluid heater 1583 (shown schematically on FIG.
15) can be coupled in fluid communication with the supply valve
assembly 1580a to heat the fluid entering the vessel assembly 1552.
In one embodiment, the fluid can be heated to a temperature of
about 50.degree. C. to about 80.degree. C. (for example, to
electrolessly plate nickel or copper) and in other embodiments, the
fluid can be heated to other temperatures. In alternate
embodiments, the electroless fluid can be introduced at ambient
temperatures. The processing portion 1554 can include a weir 1559
over which the processing fluid spills into a circumferentially
extending overflow channel 1540. The overflow channel 1540 can be
coupled to a waste valve assembly 1580b via an overflow conduit
1538 to remove processing fluid from the processing station
1550.
[0113] In one aspect of this embodiment, the supply valve assembly
1550a can include three supply valves 1581 (two of which are
visible in FIG. 15) to supply three different processing fluids
during different phases of the operation of the processing station
1550. A drain valve 1582 can be positioned beneath the supply
valves 1581 to more completely drain the supply valve assembly
1580a. The waste valve assembly 1580b can have an arrangement
generally similar to that of the supply valve assembly 1580a to
return the different processing fluids to the appropriate
reservoirs (not shown).
[0114] In one embodiment, the processing station 1550 can include
an exhaust conduit 1537 positioned to remove gaseous waste products
when a support 1560 (shown in outline in FIG. 15) carrying the
microelectronic workpiece 114 is received in the vessel assembly
1552. In one aspect of this embodiment, the support 1560 can be
generally similar to the support 1160 described above with
reference to FIG. 11, but need not include the contact assembly
1170 (FIG. 11). Accordingly, the support 1560 can support the
microelectronic workpiece 114 in contact with the electroless
processing fluid in the vessel assembly 1552.
[0115] In operation, an electroless processing fluid, heated or
unheated, can be directed into the processing portion 1554 via the
supply valve assembly 1580a. The support 1560 can be moved
downwardly to contact the microelectronic workpiece 114 with the
processing fluid in the processing portion 1554. An electroless,
wet chemical deposition process can occur at the interface between
the microelectronic workpiece 114 and the processing fluid in the
processing portion 1554 to deposit conductive material on the
microelectronic workpiece 114. The electroless process can be used
to dispose a variety of conductive structures onto the
microelectronic workpiece 114, such as seed layer enhancement
and/or repair material, blanket layers, or other conductive
structures. Alternatively, the station 1550 can be used to dispose
other, non-conductive materials on the microelectronic workpieces
114. In a further alternate embodiment, the station 1550 can be
used to remove material from the microelectronic workpiece 114. For
example, the electroless processing station 1550 or a station
having a generally similar configuration can be used to etch
material from the backside of the wafer. In an alternative
arrangement, a processing station that directs flow toward the
microelectronic workpiece from two directions can be used to remove
material from the microelectronic workpiece 114, as described in
greater detail below with reference to FIG. 16.
[0116] Removal Stations
[0117] FIGS. 16A-B are partially schematic illustrations of
material removal stations 1650 in accordance with an embodiment of
the invention. The material removal stations 1650 or "stripping
units" can be multifunctional processing capsules which can perform
cleaning, stripping, bevel etching, rinsing and drying operations.
In one aspect of this embodiment, the station 1650 can be used to
remove seed layer material from the front or device side of the
microelectronic workpiece 114. Alternatively, the station 1650 can
be used to remove conductive material and/or nonconductive material
from either the front/device side of the microelectronic workpiece
114 or the back/non-device side of the microelectronic workpiece
114. In either embodiment, the capsule can include flows of
different fluids directed to opposing sides of the microelectronic
workpiece 114 to control the amount of material removed from the
microelectronic workpiece 114.
[0118] Referring first to FIG. 16A, the station 1650 can include a
support 1660 having a motor 1661 coupled to a rotor 1662 with a
drive shaft 1663 to rotate the rotor 1662. The rotor 1662 can
include an upper chamber member 1670 and a lower chamber member
1680. The upper chamber member 1670 can be separated from the lower
chamber member 1680 (for example, by moving the support 1660
upwardly) to allow the microelectronic workpiece 114 to be
positioned therebetween. The upper chamber member 1670 can include
an upper chamber wall 1671 which defines an upper chamber 1672
positioned proximate to an upper surface 1620 of the wafer 114. The
lower chamber member 1680 can include a lower chamber wall 1681
that defines a lower chamber 1682 facing toward a lower surface
1621 of the microelectronic workpiece 114.
[0119] In operation, a first fluid (schematically indicated by
arrows Fl) is introduced into the station 1650 via an injection
nozzle 1684 (such as a multi-port injection nozzle), through a
lower chamber inlet 1683 and into the lower chamber 1682. A second
fluid (schematically illustrated by arrows F2) is introduced to the
upper chamber 1672 through an upper chamber inlet 1673.
[0120] Referring now to FIG. 16B, the first fluid Fl can proceed
outwardly along the lower surface 1621 of the microelectronic
workpiece 114 while the second fluid F2 proceeds radially outwardly
along the upper surface 1620 as the microelectronic workpiece 114
spins. In one aspect of this embodiment, the upper chamber member
1670 can include an exit duct 1675 positioned radially inwardly
from an outer edge 1622 of the microelectronic workpiece 114.
Accordingly, the first fluid F1 can proceed around the outer edge
1622 and over a peripheral margin 1623 of the upper surface 1620
before merging with the second fluid F2 and proceeding through the
exit duct 1675. In an alternate embodiment, the exit duct 1675 can
be blocked or relocated so that the first fluid Fl does not wrap
around to the upper surface 1620 of the microelectronic workpiece
114.
[0121] In some applications, it may be desirable to etch material
from the lower surface 1621 while preventing etching from occurring
on the upper surface 1620, except for the peripheral margin 1623.
Accordingly, the first fluid Fl can be selected to include an
etchant, and the second fluid F2 can include an inert liquid, such
as deionized water. An advantage of removing material from the
peripheral margin 1623 is that this may reduce the likelihood for
film flaking and contamination problems that may occur during
subsequent processing of the microelectronic workpiece 114. Further
details of aspects of the stations 1650 are described in
International Application Nos. PCT/US99/05676, filed Mar. 15, 1999,
and PCT/US99/05674, filed Mar. 15, 1999, both incorporated herein
in their entireties by reference.
[0122] Spray Station
[0123] FIG. 17 is a partially schematic, cut-away isometric view of
a spray station 1750 configured to spray one or more selected
fluids onto the microelectronic workpiece 114 in accordance with an
embodiment of the invention. In one aspect of this embodiment, the
fluid can strip or etch layers from the microelectronic workpiece
114. For example, oxide, polysilicon, nitrides, metals, epitaxial
silicon, and other materials can be stripped using a wet etching
process. In other embodiments, the spray station can perform other
functions, such as cleaning, rinsing and/or drying the
microelectronic workpiece 114, for example, after etching, or after
other phases of processing.
[0124] In one embodiment, the spray station 1750 can include a
vessel 1752 and a support 1760. The support 1760 can include a
rotor 1762 having support fingers 1763 that removably carry the
microelectronic workpiece 114. The rotor 1762 can be coupled to a
motor 1761 spin the microelectronic workpiece 114 within the vessel
1752.
[0125] In a further aspect of this embodiment, the vessel 1752 can
include a spray nozzle manifold 1770 having a plurality of main
spray nozzles 1771. In one aspect of this embodiment, the spray
nozzle manifold 1770 can have a cross-shaped arrangement with a
plurality of main spray nozzles 1771 positioned on each arm of the
cross. In other embodiments, the spray nozzle manifold 1770 can
have other arrangements. In any of these embodiments, the spray
nozzle manifold 1770 can be coupled to a fluid inlet 1732 to supply
fluid to the main spray nozzles 1771. Accordingly, the main spray
nozzles 1771 can direct the fluid upwardly toward the
microelectronic workpiece 114 as the microelectronic workpiece 114
spins. A drain 1744 can collect the spent fluid for removal from
the vessel 1752.
[0126] In another aspect of this embodiment, the vessel 1752 can
further include side spray nozzles 1772 positioned around the
periphery of the vessel 1752. The side spray nozzles 1772 can be
configured to rinse the microelectronic workpiece 114 after the
main spray nozzles 1771 have been activated, for example, to rinse
the microelectronic workpiece 114 after etching. The side spray
nozzles 1772 can also be coupled to a gas source, such as an inert
gas source, to dry the microelectronic workpiece 114 after
rinsing.
[0127] Thermal Processing Station
[0128] FIG. 18 is a partially schematic side view of an apparatus
1800 for thermally processing microelectronic workpieces 114 in
accordance with an embodiment of the invention. In one aspect of
this embodiment, the apparatus 1800 includes two thermal processing
chambers 1803 (shown as an upper chamber 1803a and a lower chamber
1803b) supported by apparatus supports 1802. Each chamber 1803 can
have a base 1810 fixed to the supports 1802, and lid 1820 that
moves toward and away from the base 1810 to close and open the
chamber 1803. The workpiece 114 can be supported within the chamber
1803 on a plurality of workpiece supports 1870. In one aspect of
this embodiment, the apparatus 1800 can anneal a selected material
(such as copper or another metal) of the workpiece 114.
Alternatively, the apparatus 1800 can perform other elevated
temperature processes, such as reflowing solder on the workpiece
114, curing or baking photoresist on the workpiece 114, and/or
other processes that benefit from and/or require an elevated
temperature. The apparatus can also cool the workpiece 114, as
described in greater detail below.
[0129] When the apparatus 1800 both heats and cools the workpiece
114, the supports 1870 can first lower the workpiece 114 into
contact with a heat source 1840 during a heating phase of the
process. Then, during a cooling phase of the process, a first heat
sink 1860 can rise to engage an opposite surface of the heat source
1840 to cool both the heat source 1840 and the workpiece 114. After
the cooling phase, the first heat sink 1860 can descend to engage a
second heat sink 1850 where the first heat sink 1860 is cooled in
preparation for another cycle. The lid 1820 can then move away from
the base 1810 and the workpiece 114 can be removed. In one aspect
of this embodiment, the heat source 1840 can be an electrical
resistance thin film or thick film heater positioned between the
workpiece 114 and the first heat sink 1860, with the first heat
sink 1860 positioned beneath the heat source 1840. The heat source
1840 can include vacuum apertures 1841 coupled to a vacuum source
(not shown) to draw the microelectronic workpiece 114 into close
engagement with the heat source 1840 during heating. For example,
the heat source 1840 can be supported relative to the base 1810
with a plurality of heat source supports 1844, at least one of
which includes a vacuum passage in fluid communication with the
vacuum apertures 1841.
[0130] The lid 1820 of each chamber 1803 can be coupled to a lid
actuator 1821 to move downwardly from an open position (shown in
FIG. 18) to a closed position. The lid actuator 1821 of the upper
chamber 1803a can be attached to the cover 1830, and the lid
actuator 1821 of the lower chamber 1803b can be attached to the
base 1810 of the upper chamber 1803a. In one embodiment, each lid
actuator 1821 can include an annular, air-activated bellows that
moves the lid 1820 downwardly when inflated. A spring (not shown)
can return the lid 1820 to the open (upper) position when the air
pressure within the bellows is released. When the lid 1820 is in
the closed position, the lid 1820 and the base 1810 define a
chamber volume 1808 around the microelectronic workpiece 114. The
lid 1820 can include a purge fluid passageway 1822 that transmits a
purge fluid (such as nitrogen) to the chamber volume 1808 during
processing.
[0131] The first heat sink 1860 can be coupled to a heat sink
actuator 1861 that moves the first heat sink 1860 upwardly into
engagement with the heat source 1840. In one embodiment, the heat
sink actuator 1861 can include an air-driven bellows, generally
similar to the lid actuator 1821 discussed above. Alternatively,
the heat sink actuator 1861 can have other configurations that move
the first heat sink 1860 upwardly into engagement with the heat
source 1840 and downwardly out of engagement with the heat source
1840.
[0132] In a further aspect of this embodiment, the first heat sink
1860 can include a vacuum supply passageway 1862 connected to a
vacuum source (not shown). The vacuum supply passageway 1862 is
coupled to one or more radial vacuum channels in an upper surface
of the first heat sink 1860 to draw the first heat sink 1860 into
close thermal contact with the heat source 1840 when the heat
source 1840 and the first heat sink 1860 are engaged with each
other. The upper surface of the first heat sink 1860 can also
include a compressible, conductive thermal pad to provide close
thermal contact with the heat source 1840 when the first heat sink
1860 is in its raised position. In another aspect of this
embodiment, the lower surface of the first heat sink 1860 can
include a compressible, conductive thermal pad to improve the
thermal contact with the second heat sink 1850.
[0133] In one embodiment, the first heat sink 1860 has no active
cooling elements. Instead, the second heat sink 1850 can be
actively cooled and can cool the first heat sink 1860 when the
first heat sink 1860 is disengaged from the heat source 1840 and
engaged with the second heat sink 1850. Accordingly, the second
heat sink 1850 can include a cooling channel 1854 coupled to a
cooling fluid supply port and a return port (not shown).
[0134] In other embodiments, the apparatus 1800 can have other
arrangements. For example, the apparatus 1800 can include a simpler
hot plate arrangement for applications where the process
temperature and environment need to be so precisely controlled. In
other embodiments, the apparatus can include heat sources other
than electrically powered resistive heaters. Further details of
alternate embodiments are disclosed in U.S. patent application Ser.
No. 09/733,608(Attorney Docket No. 29195.8124US), filed Dec. 8,
2000 and incorporated herein in its entirety by reference.
[0135] Station Combinations and Processes
[0136] The apparatus 100 described above with reference to FIGS.
1-8 can include a variety of combinations of processing stations,
such as those described above with reference to FIGS. 9-18, to
perform a variety of functions on the microelectronic workpieces
114. In one aspect of this embodiment, the apparatus 100 can
include a plurality of stations all of which have generally the
same configuration and all of which perform generally the same
function of functions. For example, the apparatus 100 can include
only material removal stations generally similar to those described
above with reference to FIGS. 16A-B, or only thermal processing
stations generally similar to that described above with reference
to FIG. 18, or only deposition stations for metal or
electrophoretic resist deposition, generally similar to those
described above with reference to FIG. 14.
[0137] In other embodiments, the apparatus 100 can include more
than one type of station to perform different functions on
microelectronic workpieces 114 within the same apparatus 100. For
example, in one embodiment, the apparatus 100 can include a
metrology station, a material application station, a material
removal station, a spray station, and an anneal station. In other
embodiments, the apparatus 100 can include a subset of these types
of stations. For example, in one specific embodiment, the apparatus
100 can include a multi-anode material application station
generally similar to that described above with reference to FIG. 14
for plating solder onto a microelectronic workpiece 114. The
apparatus can also include a spray station generally similar to
that described above reference to FIG. 17 to post-process the
microelectronic workpiece 114 after it emerges from the multi-anode
application station. In still a further aspect of this embodiment,
the apparatus can include a pre-aligner configured to orient
microelectronic workpieces 114 (such as 6 inch or 150 mm wafers
having a flat edge) that are preferably processed in a specific
orientation. Further details of suitable pre-aligners are included
in U.S. Pat. No. 6,091,498, incorporated herein in its entirety by
reference.
[0138] In other embodiments, the apparatus 100 can include other
combinations of stations. For example, in a further specific
embodiment, the apparatus 100 can include any one of the
application stations described above with reference to FIGS. 11-15
for enhancing and/or repairing a seed layer of the microelectronic
workpiece 114. The apparatus 100 can further include a material
removal station generally similar to that described above with
reference to FIGS. 16A-B, a multi-anode station generally similar
to that described above with reference to FIG. 14 for applying a
blanket material to the microelectronic workpiece 114, and a
thermal processing station generally similar to that described
above with reference to FIG. 18 to anneal the blanket layer applied
to the microelectronic workpiece 114.
[0139] In still a further particular embodiment, the apparatus 100
can be configured specifically to process electrophoretic resist on
the microelectronic workpiece 114. For example, the apparatus 100
can include a multi-anode station generally similar to that
described above with reference to FIG. 14 for depositing the
electrophoretic resist, along with a bake chamber to post-process
the electrophoretic resist. In one aspect of this embodiment, the
bake chamber can have a configuration generally similar to that
described above with reference to FIG. 18, and in an alternate
embodiment, the bake chamber can be simpler and can have a
construction generally similar to a hot plate, to elevate the
temperature of the microelectronic workpiece 114 to about
112.degree. Celsius. The apparatus can further include a spray
station generally similar to that described above with reference to
FIG. 17 for further post processing.
[0140] In any of the foregoing embodiments, microelectronic
workpieces can be automatically moved into and/or out of any of the
processing stations in an automatic mode or in a manual mode, as
described above with reference to FIGS. 1-5. As described above
with reference to FIGS. 1-5, some microelectronic workpieces 114
can be moved manually into and/or out of selected processing
stations, while other microelectronic workpieces 114 can be moved
automatically into other processing stations. Alternatively, the
apparatus 100 can be alternatively dedicated to manual operation
and automatic operation. In any of these embodiments, the apparatus
100 can provide a versatile platform for a testing, experimenting
with, or demonstrating processes, as well as performing the same or
different processes in a production setting.
[0141] From the foregoing, it will be appreciated that specific
embodiments of the invention have been described herein for
purposes of illustration, but that various modifications may be
made without deviating from the spirit and scope of the invention.
Accordingly, the invention is not limited except as by the appended
claims.
* * * * *