U.S. patent application number 09/766352 was filed with the patent office on 2001-07-19 for method of depositing films by using carboxylate complexes.
Invention is credited to Vaartstra, Brian A..
Application Number | 20010008111 09/766352 |
Document ID | / |
Family ID | 24895007 |
Filed Date | 2001-07-19 |
United States Patent
Application |
20010008111 |
Kind Code |
A1 |
Vaartstra, Brian A. |
July 19, 2001 |
Method of depositing films by using carboxylate complexes
Abstract
A method of forming a film on a substrate using chemical vapor
deposition techniques and carboxylate complexes. The complexes and
method are particularly suitable for the preparation of
semiconductor structures.
Inventors: |
Vaartstra, Brian A.; (Nampa,
ID) |
Correspondence
Address: |
MUETING, RAASCH & GEBHARDT, P.A.
P.O. BOX 581415
MINNEAPOLIS
MN
55401
US
|
Family ID: |
24895007 |
Appl. No.: |
09/766352 |
Filed: |
January 19, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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09766352 |
Jan 19, 2001 |
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09388667 |
Sep 2, 1999 |
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6217645 |
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09388667 |
Sep 2, 1999 |
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08720711 |
Oct 2, 1996 |
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6010969 |
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Current U.S.
Class: |
106/287.18 ;
257/E21.272 |
Current CPC
Class: |
H01L 21/02197 20130101;
H01L 21/02183 20130101; C23C 16/40 20130101; H01L 21/31691
20130101; H01L 21/02271 20130101; H01L 21/02205 20130101; C23C
16/4486 20130101 |
Class at
Publication: |
106/287.18 |
International
Class: |
C07G 001/00; C08H
001/00; C09K 003/00 |
Claims
What is claimed is:
1. A method of manufacturing a semiconductor structure comprising:
providing a semiconductor substrate or substrate assembly;
providing a precursor comprising one or more carboxylate complexes
of the formula:
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup.2).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.-
2).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z
(Formula I) or
M.sup.n+(OC(O)R.sup.1).sub.u(O).sub.v{(R.sup.3)(R.sup.4)N[-
(CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.-
z (Formula II) wherein: M is a metal or metalloid; each R is H or
an organic group; n+ is the valence oxidation state of the metal or
metalloid; u=1 to n; v=0 to n-1; w=1 to 5; x=0 to 8; y=1 to 5; z=0
to 5; and u+v=n for Formula I or u+2v=n for Formula II; and
vaporizing the precursor and directing it toward the semiconductor
substrate or substrate assembly using a chemical vapor deposition
technique to form a film on a surface of the semiconductor
substrate or substrate assembly.
2. The method of claim 1 wherein the precursor is vaporized in the
presence of a carrier gas.
3. The method of claim 2 wherein the precursor is vaporized in the
presence of a reaction gas.
4. The method of claim 3 wherein: the carrier gas is selected from
the group consisting of nitrogen, helium, argon, and mixtures
thereof; and the reaction gas is selected from the group consisting
of oxygen, nitrous oxide, ammonia, water vapor, hydrogen sulfide,
hydrogen selenide, hydrogen telluride, and mixtures thereof.
5. The method of claim 4 wherein the film is a film of an oxide,
sulfide, nitride, selenide, telluride, or mixture thereof.
6. The method of claim 1 wherein the film is an oxide film and
forms a dielectric layer.
7. The method of claim 1 wherein the precursor is a liquid
precursor.
8. The method of claim 7 wherein the chemical vapor deposition
technique comprises flash vaporization, bubbling, microdroplet
formation, or combinations thereof.
9. The method of claim 1 wherein M is selected from the group
consisting of Group IA, Group IIA, Group IIIA, Group IIIB, Group
IVB, Group VA, Group VB, and the lanthanides.
10. The method of claim 1 wherein x=0 to 4 and z=0 to 2.
11. The method of claim 1 wherein n+=1 to 8.
12. The method of claim 1 wherein each R.sup.1 and R.sup.2 group is
independently H or a (C.sub.1-C.sub.30)organic group.
13. The method of claim 1 wherein each R.sup.3, R.sup.4, R.sup.5,
R.sup.6, and R.sup.7 group is independently H or a
(C.sub.1-C.sub.10)organic group.
14. The method of claim 13 wherein each organic group is a
heteroatom-free organic group.
15. The method of claim 1 wherein the carboxylate complex is a
compound of the formula (Formula III):
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup.2).sub.v wherein: M is a metal
selected from the group consisting of Group IVB and Group VB; each
R is H or an organic group; n=1 to 5; u=1 to n; and v=0 to n-1.
16. The method of claim 1 wherein the carboxylate complex is a
compound of the formula (Formula IV):
M.sup.n+(OC(O)R.sup.1).sub.u{(R.sup.3)(R.sup.4)- N
[(CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.s-
ub.z wherein: M is a metal or metalloid selected from the group
consisting of Group IA, Group IIA, Group IIIA, Group IIIB, and the
lanthanides; each R is H or an organic group; n=1 to 4; u=1 to n;
w=1 to 5; x=0 to 8; y=1 to 5; and z=1 to 5.
17. A method of manufacturing a memory device structure comprising:
providing a substrate having a first electrode thereon; providing a
precursor comprising one or more carboxylate complexes of the
formula:
M.sup.n+(OC(O)R.sup.1),(OR.sup.2).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.2).su-
b.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z
(Formula I) or
M.sup.n+(OC(O)R.sup.1).sub.u(O).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.2-
).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z
(Formula II) wherein: M is a metal or metalloid; each R is H or an
organic group; n+ is the valence oxidation state of the metal or
metalloid; u=1 to n; v=0 to n-1; w=1 to 5; x=0 to 8; y=1 to 5; z=0
to 5; and u+v=n for Formula I or u+2v=n for Formula II; and forming
a first electrode on the substrate; vaporizing the precursor and
directing it toward the substrate using a chemical vapor deposition
technique to form a dielectric layer comprising an oxide film on
the first electrode of the substrate; and forming a second
electrode on the dielectric layer.
18. The method of claim 17 wherein the substrate is a silicon
wafer.
19. The method of claim 17 wherein the oxide film forms a
ferroelectric layer.
20. The method of claim 17 wherein M is selected from the group
consisting of Group IA, Group IIA, Group IIIA, Group IIIB, Group
IVB, Group VA, Group VB, and the lanthanides.
21. The method of claim 20 wherein M is selected from the group
consisting of Ba, Sr, Nb, Ta, Ti, and Bi.
22. The method of claim 17 wherein x=0 to 4 and z=0 to 2.
23. The method of claim 17 wherein n+=1 to 8.
24. The method of claim 17 wherein each R.sup.1 and R.sup.2 group
is independently H or a (C.sub.1-C.sub.30)organic group.
25. The method of claim 24 wherein each organic group is a
nonaromatic group.
26. The method of claim 17 wherein each R.sup.3, R.sup.4 , R.sup.5,
R.sup.6, and R.sup.7 group is independently H or a
(C.sub.1-C.sub.10)organic group.
27. The method of claim 26 wherein each group organic group is a
heteroatom-free organic group.
28. The method of claim 17 wherein the carboxylate complex is a
compound of the formula (Formula III):
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup.2).sub.- v wherein: M is a
metal selected from the group consisting of Group IVB and Group VB;
each R is H or an organic group; n=1 to 5; u=1 to n; and v=0 to
n-1.
29. The method of claim 17 wherein the carboxylate complex is a
compound of the formula (Formula IV):
M.sup.n+(OC(O)R.sup.1).sub.u{(R.sup.3)(R.sup- .4)N
[(CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)-
}.sub.z wherein: M is a metal or metalloid selected from the group
consisting of Group IA, Group IIA, Group IIIA, Group IIIB, and the
lanthanides; each R is H or an organic group; n=1 to 4; u=1 to n;
w=1 to 5; x=0 to 8; y=1 to 5; and z=1 to 5.
30. The method of claim 17 wherein the precursor is a liquid
precursor which is vaporized in the presence of a carrier gas.
31. The method of claim 30 wherein the precursor is vaporized in
the presence of a reaction gas.
32. The method of claim 31 wherein: the carrier gas is selected
from the group consisting of nitrogen, helium, argon, and mixtures
thereof; and the reaction gas is selected from the group consisting
of oxygen, nitrous oxide, ammonia, water vapor, hydrogen sulfide,
hydrogen selenide, hydrogen telluride, and mixtures thereof.
33. A method of forming a film on a substrate comprising: providing
a substrate; providing a precursor comprising one or more
carboxylate complexes of the formula:
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup.2).sub.v{(R-
.sup.3)(R.sup.4)N[(CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup-
.6)(R.sup.7)}.sub.z (Formula I) or
M.sup.n+(C(O)R.sup.1).sub.u(O).sub.v{-
(R.sup.3)(R.sup.4)N[(CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.s-
up.6)(R.sup.7)}.sub.z (Formula II) wherein: M is a metal or
metalloid; each R is H or an organic group; n+ is the valence
oxidation state of the metal or metalloid; u=1 to n; v=0 to n-1;
w=1 to 5; x=0 to 8; y=1 to 5; z=0 to 5; and u+v=n for Formula I or
u+2v=n for Formula II; and vaporizing the precursor and directing
it toward the substrate using a chemical vapor deposition technique
to form a film on the substrate.
34. The method of claim 33 wherein the precursor is vaporized in
the presence of a carrier gas.
35. The method of claim 34 wherein the precursor is vaporized in
the presence of a reaction gas.
36. The method of claim 35 wherein: the carrier gas is selected
from the group consisting of nitrogen, helium, argon, and mixtures
thereof; and the reaction gas is selected from the group consisting
of oxygen, nitrous oxide, ammonia, water vapor, hydrogen sulfide,
hydrogen selenide, hydrogen telluride, and mixtures thereof.
37. The method of claim 36 wherein the film is a film of an oxide,
sulfide, nitride, selenide, telluride, or mixture thereof.
38. The method of claim 37 wherein the film is an oxide film.
39. The method of claim 38 wherein the oxide film forms a
ferroelectric layer in a ferroelectric memory device.
40. The method of claim 33 wherein the substrate comprises a
silicon substrate.
41. The method of claim 33 wherein the precursor is a liquid
precursor and the step of vaporizing comprises flash vaporization,
bubbling, microdroplet formation, or combinations thereof.
42. The method of claim 33 wherein M is selected from the group
consisting of Group IA, Group IIA, Group IIIA, Group IIIB, Group
IVB, Group VA, Group VB, and the lanthanides.
43. The method of claim 33 wherein x=0 to 4 and z=0 to 2.
44. The method of claim 33 wherein n+=1 to 8.
45. The method of claim 33 wherein each R.sup.1 and R.sup.2 group
is independently H or a (C.sub.1-C.sub.30)organic group.
46. The method of claim 45 wherein each R.sup.1 and R.sup.2 group
is independently H or a (C.sub.1-C.sub.30)aliphatic group.
47. The method of claim 46 wherein each R.sup.1 and R.sup.2 group
is independently H or a (C.sub.1-C.sub.8)alkyl moiety.
48. The method of claim 33 wherein each R.sup.3, R.sup.4, R.sup.5,
R.sup.6, and R.sup.7 group is independently H or a
(C.sub.1-C.sub.10)aliphatic group.
49. The method of claim 46 wherein each R.sup.3, R.sup.4, R.sup.5,
R.sup.6, and R.sup.7 group is independently H or a
(C.sub.1-C.sub.5)alkyl moiety.
50. The method of claim 33 wherein the carboxylate complex is a
compound of the formula (Formula III):
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup.2).sub.- v wherein: M is a
metal selected from the group consisting of Group IVB and Group VB;
each R is H or an organic group; n=1 to 5; u=1 to n; and v=0 to
n-1.
51. The method of claim 33 wherein the carboxylate complex is a
compound of the formula (Formula IV):
M.sup.n+(OC(O)R.sup.1).sub.u{(R.sup.3)(R.sup-
.4)N[(CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}-
.sub.z wherein: M is a metal or metalloid selected from the group
consisting of Group IA, Group IIA, Group IIIA, Group IIIB, and the
lanthanides; each R is H or an organic group; n=1 to 4; u=1 to n;
w=1 to 5; x=0 to 8; y=1 to 5; and z=1 to 5.
52. A method of forming a film on a substrate comprising: providing
a substrate; providing a liquid precursor comprising one or more
carboxylate complexes of the formula:
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup-
.2).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub.2).-
sub.yN(R.sup.6)(R.sup.7)}.sub.z (Formula I) or
M.sup.n+(OC(O)R.sup.1).s-
ub.u(O).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub-
.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z (Formula II) wherein: M is a
metal or metalloid; each R is H or an organic group; n+ is the
valence oxidation state of the metal or metalloid; u=1 to n; v=0 to
n-1; w=1 to 5; x=0 to 8; y=1 to 5; z=0 to 5; and u+v=n for Formula
I or u+2v=n for Formula II; generating microdroplets of the liquid
precursor; vaporizing the microdroplets using a heated carrier gas;
and directing the vaporized microdroplets toward the substrate to
form a film on the substrate.
53. A chemical vapor deposition precursor comprising two or more
carboxylate complexes of the formula:
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup-
.2).sub.v{(R.sup.3)(R.sup.4)N](CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub.2).-
sub.yN(R.sup.6)(R.sup.7)}.sub.z (Formula I) or
M.sup.n+(OC(O)R.sup.1).su-
b.u(O).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.2).sub.wN(R.sup.5)].sub.x(CH.sub.-
2).sub.yN(R.sup.6)(R.sup.7)}.sub.z (Formula II) wherein: M is a
metal or metalloid; each R is H or an organic group; n+ is the
valence oxidation state of the metal or metalloid; u=1 to n; v=0 to
n-1; w=1 to 5; x=0 to 8; y=1 to 5; z=0 to 5; and u+v=n for Formula
I or u+2v for Formula II.
54. A chemical vapor deposition precursor comprising: at least one
compound of the formula (Formula III):
M.sup.n+(OC(O)R.sup.1).sub.u(OR.su- p.2).sub.v wherein: M is a
metal selected from the group consisting of Group IVB and Group VB;
each R is H or an organic group; n=1 to 5; u=1 to n; and v=0 to
n-1; and at least one compound of the formula (Formula IV):
M.sup.n+(OC(O)R.sup.1).sub.u{(R.sup.3)(R.sup.4)N[(CH.sub.2).sub.wN(R.sup.-
5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z wherein: M is a
metal or metalloid selected from the group consisting of Group IA,
Group IIA, Group IIIA, Group IIIB, and the lanthanides; each R is H
or an organic group; n=1 to 4; u=1 to n; w=1 to 5; x=0 to 8; y=1 to
5; and z=1 to 5.
Description
FIELD OF THE INVENTION
[0001] This invention relates to the preparation of semiconductor
device structures, particularly to methods of depositing films,
such as metal oxide films, using metal or metalloid carboxylate
complexes.
BACKGROUND OF THE INVENTION
[0002] Capacitors are the basic energy storage devices in random
access memory devices, such as dynamic random access memory (DRAM)
devices, static random access memory (SRAM) devices, and now
ferroelectric memory (FE RAM) devices. They consist of two
conductors, such as parallel metal or polysilicon plates, which act
as the electrodes (i.e., the storage node electrode and the cell
plate capacitor electrode), insulated from each other by a
dielectric material (a ferroelectric dielectric material for FE
RAMs).
[0003] High quality thin oxide films of metals or metalloids, such
as barium-strontium-titanates and strontium-bismuth-tantalates, for
example, deposited on semiconductor wafers have recently gained
interest for use in memories. These materials have very high
dielectric constants and excellent resistance to fatigue. They also
have suitable properties for a variety of other uses, such as
electrooptic materials, pyroelectric materials, and antireflective
coatings.
[0004] Suitable metal or metalloid oxides are typically delivered
to a substrate in the vapor phase; however, many oxides are
difficult to deliver using vapor deposition technology. Many
precursors are sensitive to thermal decomposition. Also, many
precursors have vapor pressures that are too low for effective
vapor deposition. Thus, there is a continuing need for methods and
materials for the deposition of oxide films using vapor deposition
processes on semiconductor structures, particularly random access
memory devices.
SUMMARY OF THE INVENTION
[0005] The present invention is directed to a method of
manufacturing a semiconductor structures, particularly a memory
device. The method involves forming a film using a carboxylate
complex. Typically and preferably, the film is a dielectric metal-
or metalloid-containing material. The metal- or
metalloid-containing film can be an oxide, sulfide, selenide,
telluride, nitride, or combination thereof. Preferably, the film is
a metal- or metalloid-containing oxide film. The film can be used
as a dielectric layer in an integrated circuit structure,
particularly in a memory device such as a ferroelectric memory
device.
[0006] This method involves vaporizing a precursor, preferably a
liquid precursor, comprising one or more carboxylate complexes and
directing it toward a substrate, such as a semiconductor substrate
or substrate assembly, using a chemical vapor deposition technique
to form a metal- or metalloid-containing film on a surface of the
substrate, wherein the carboxylate complex is of the following
formula:
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup.2).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.2-
).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z
(Formula I)
or
M.sup.n+(OC(O)R.sup.1).sub.u(O).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.2).sub.w-
N(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z
(Formula II)
[0007] wherein: M is a metal or metalloid; each R is H or an
organic group; n+ is the valence oxidation state of the metal or
metalloid (typically, 1 to 8); u=1 to n; v=0 to n-1; w=1 to 5; x=0
to 8; y=1 to 5; z=0 to 5; and u+v=n for Formula I or u +2v=n for
Formula II. These carboxylate complexes are neutral complexes and
may be liquids or solids. If they are solids, they are preferably
sufficiently soluble in an organic solvent to allow for
vaporization by flash vaporization, bubbling, microdroplet
formation, etc.
[0008] This method is particularly well suited for forming films on
a surface of a semiconductor substrate or substrate assembly, such
as a silicon wafer, with or without layers or structures formed
thereon, used in forming integrated circuits. It is to be
understood that the method of the present invention is not limited
to deposition on silicon wafers; rather, other types of wafers
(e.g., gallium arsenide wafer, etc.) can be used as well. Also, the
methods of the present invention can be used in
silicon-on-insulator technology. Furthermore, substrates other than
semiconductor substrates or substrate assemblies, can be used in
the method of the present invention. These include, for example,
fibers, wires, etc. If the substrate is a semiconductor substrate
or substrate assembly, the films can be formed directly on the
lowest semiconductor surface of the substrate, or they can be
formed on any of a variety of the layers (i.e., surfaces) as in a
patterned wafer, for example. Thus, the term "semiconductor
substrate" refers to the base semiconductor layer, e.g., the lowest
layer of silicon material in a wafer or a silicon layer deposited
on another material such as silicon on sapphire. The term
"semiconductor substrate assembly" refers to the semiconductor
substrate having one or more layers or structures formed
thereon.
[0009] A particularly preferred embodiment of the present invention
is a method of depositing a liquid precursor using a chemical vapor
deposition involving microdroplet formation. The liquid precursor
includes one or more carboxylate complexes of Formulas I or II,
which may be liquids or solids dissolved in an organic solvent, for
example. The method involves generating microdroplets of the liquid
precursor; vaporizing the microdroplets using a heated carrier gas;
and directing the vaporized microdroplets toward the substrate to
form a film on the substrate.
[0010] Also, the present invention provides a chemical vapor
deposition precursor comprising two or more carboxylate complexes
of Formula I or Formula II above. One particularly preferred
chemical vapor deposition precursor comprises: at least one
compound of the formula (Formula III)
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup.2).sub.v wherein M is a metal
selected from the group consisting of Group IVB and Group VB, each
R is H or an organic group, n=1 to 5, u=1 to n, and v=0 to n-1; and
at least one compound of the formula
[0011]
M.sup.n+(OC(O)R.sup.1).sub.u{(R.sup.3)(R.sup.4)N[(CH.sub.2).sub.wN-
(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z (Formula
IV)
[0012]
[0013] wherein M is a metal or metalloid selected from the group
consisting of Group IA, Group IIA, Group IIIA, Group IIIB, and the
lanthanides, each R is H or an organic group, n=1 to 4, u=1 to n,
w=1 to 5, x=0 to 8, y=1 to 5, and z=1 to 5.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] FIG. 1 is a cross-sectional schematic of a thin layer
ferroelectric memory device having a ferroelectric oxide layer
between the electrodes.
[0015] FIG. 2 is a perspective view of a chemical vapor deposition
coating apparatus suitable for use in the method of the present
invention.
DETAILED DESCRIPTION
[0016] The present invention provides a method of forming film
(preferably, an oxide film) using one or more carboxylate
complexes. Preferably, the carboxylate complexes are mononuclear
(i.e., monomers) and display few intermolecular forces of
attraction. Thus, they are preferably volatile (or sublimable) and
transportable in the gas phase. They preferably have vapor
pressures sufficiently low such that they are liquids at room
temperature, although they can be solids. If they are solids, they
are preferably soluble in organic solvents, such as aromatic and
aliphatic hydrocarbons, nitrites, ethers, amines, etc., which
allows for vaporization as a homogeneous mixture by direct liquid
injection (although the solids can be sublimed in a chemical vapor
deposition apparatus). They are also compatible with each other, so
that mixtures of variable quantities of the complexes will not
interact to significantly change their physical properties. Thus,
they are suitable for use in chemical vapor deposition techniques,
such as flash vaporization techniques, bubbler techniques, and the
microdroplet techniques described in copending application entitled
"Method and Apparatus for Vaporizing Liquid Precursors and System
for Using Same," filed on even date herewith.
[0017] The method of the present invention involves vaporizing a
precursor, preferably a liquid precursor, that includes one or more
carboxylate complexes. The precursor can be vaporized in the
presence of a gas, which can be inert (i.e., a carrier gas) or
reactive with the carboxylate complex (i.e., a reaction gas), to
form a film.
[0018] The carrier gas can be selected from a wide variety of gases
that are unreactive with the carboxylate complexes described
herein. Examples include nitrogen, helium, and argon. The reaction
gas can be selected from a wide variety of gases reactive with the
carboxylate complexes, at least at a substrate surface under the
conditions of chemical vapor deposition. Examples of reaction gases
include oxygen, nitrous oxide, ammonia, water vapor, hydrogen
sulfide, hydrogen selenide, hydrogen telluride. Various
combinations of carrier gases and/or reaction gases can be used in
the methods of the present invention.
[0019] The resultant film therefore can be an oxide, sulfide,
nitride, selenide, telluride, etc., or mixtures thereof.
Preferably, the film formed is an oxide film. The film can be
deposited in a wide variety of thicknesses, depending on the
desired use. Preferably, the oxide film formed can be used as the
dielectric material (e.g., ferroelectric material) between the
plates (i.e., electrodes) in memory devices, such as ferroelectric
memories.
[0020] The designation "carboxylate complex" refers to a metal or
metalloid complex containing negatively charged carboxylate ligands
formed from a carboxylic acid or substituted carboxylic acid. Any
of a variety of carboxylate ligands can be present in the
carboxylate complex as long as the complex can be used to form a
film using chemical vaporization techniques. The carboxylate ligand
stabilizes the metal/metalloid complex and can be tailored in the
length of its hydrocarbon chain to yield desired solubility and
viscosity characteristics. Examples of suitable carboxylate ligands
include, but are not limited to, acetate, propionate, isobutyrate,
and pivalate.
[0021] The carboxylate complex can also include other ligands, such
as alkoxy groups, aryloxy groups, and polyamine groups.
Particularly desirable are the polyamine groups (i.e., polyamine
ligands). The polyamine ligands are sterically demanding. Thus,
upon coordination to the metal or metalloid, they surround it,
thereby reducing the amount of aggregation, which results in
improved volatility. Thus, the polyamine ligands are preferred in
the coordination sphere of the metal and metalloid complexes that
are particularly difficult to vaporize.
[0022] Suitable carboxylate complexes have the following general
formulas:
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup.2).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.2-
).sub.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z
(Formula I)
or
M.sup.n+(OC(O)R.sup.1).sub.u(O).sub.v{(R.sup.3)(R.sup.4)N[(CH.sub.2).su-
b.wN(R.sup.5)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z
(Formula II) wherein: M is a metal or metalloid; each R (i.e.,
R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, and R.sup.7)
is H or an organic group (preferably, an organic group); n+ is the
valence oxidation state of the metal or metalloid (preferably, 1 to
8); u=1 to n; v=0 to n-1; w=1 to 5; x= 0 to 8 (preferably, 0 to 4);
y=1 to 5; z=0 to 5 (preferably, 0 to 2); and u+v=n for Formula I or
u+2v=n for Formula II. These complexes are monomers (i.e.,
mononuclear) in that they contain one metal or metalloid per
molecule.
[0023] A preferred class of carboxylate complexes include those in
which z =0. These carboxylate complexes are of the formula (Formula
III):
M.sup.n+(OC(O)R.sup.1).sub.u(OR.sup.2).sub.v
[0024] wherein: M is a metal selected from the group consisting of
Group IVB and Group VB; each R (i.e., R.sup.1 and R.sup.2) is H or
an organic group (preferably, an organic group); n=1 to 5; u=1 to
n; and v=0 to n-1.
[0025] Another preferred class of carboxylate complexes include
those in which v=0. These carboxylate complexes are of the formula
(Formula IV):
M.sup.n+(OC(O)R.sup.1).sub.u{(R.sup.3)(R.sup.4)N[(CH.sub.2).sub.wN(R.sup.5-
)].sub.x(CH.sub.2).sub.yN(R.sup.6)(R.sup.7)}.sub.z
[0026] wherein: M is a metal or metalloid selected from the group
consisting of Group IA (alkali metals), Group IIA (alkaline earth
metals), Group IIIA, Group IIIB, and the lanthanides (preferably, M
is a metal from Groups IA or IIA); each R (R.sup.1, R.sup.2,
R.sup.3, R.sup.4, R.sup.5, R.sup.6, and R.sup.7) is H or an organic
group (preferably, an organic group); n=1 to 4; u =1 to n; w=1 to
5; x=0 to 8 (preferably, 0 to 4); y=1 to 5; and z=1 to 5
(preferably, 1 to 2).
[0027] Various combinations of the compounds described herein can
be used in the precursor for chemical vapor deposition. Thus, as
used herein, a "precursor" refers to a liquid or solid that
includes one or more compounds of the formulas described herein.
The precursor can also include one or more organic solvents
suitable for use in a chemical vapor deposition system, as well as
other additives, such as free ligands, that assist in the
vaporization of the desired compounds.
[0028] As used herein, the term "organic group" means a hydrocarbon
group that is classified as an aliphatic group, cyclic group, or
combination of aliphatic and cyclic groups (e.g., alkaryl and
aralkyl groups). In the context of the present invention, the term
"aliphatic group" means a saturated or unsaturated linear or
branched hydrocarbon group. This term is used to encompass alkyl,
alkenyl, and alkynyl groups, for example. The term "alkyl group"
means a saturated linear or branched hydrocarbon group including,
for example, methyl, ethyl, isopropyl, t-butyl, heptyl, dodecyl,
octadecyl, amyl, 2-ethylhexyl, and the like. The term "alkenyl
group" means an unsaturated, linear or branched hydrocarbon group
with one or more carbon-carbon double bonds, such as a vinyl group.
The term "alkynyl group" means an unsaturated, linear or branched
hydrocarbon group with one or more carbon-carbon triple bonds. The
term "cyclic group" means a closed ring hydrocarbon group that is
classified as an alicyclic group, aromatic group, or heterocyclic
group. The term "alicyclic group" means a cyclic hydrocarbon group
having properties resembling those of aliphatic groups. The term
"aromatic group" or aryl group" means a mono--or polynuclear
aromatic hydrocarbon group. The term "heterocyclic group" means a
closed ring hydrocarbon in which one or more of the atoms in the
ring is an element other than carbon (e.g., nitrogen, oxygen,
sulfur, etc.).
[0029] In metal- or metalloid-complexes such as this, substitution
is not only tolerated, but is often advisable. Thus, substitution
is anticipated in the complexes of the present invention. As a
means of simplifying the discussion and the recitation of certain
terminology used throughout this application, the terms "group" and
"moiety" are used to differentiate between chemical species that
allow for substitution or that may be substituted and those that do
not so allow or may not be so substituted. Thus, when the term
"group" is used to describe a chemical substituent, the described
chemical material includes the unsubstituted group and that group
with nonperoxidic O, N, or S atoms, for example, in the chain as
well as carbonyl groups or other conventional substitution. Where
the term "moiety" is used to describe a chemical compound or
substituent, only an unsubstituted chemical material is intended to
be included. For example, the phrase "alkyl group" is intended to
include not only pure open chain saturated hydrocarbon alkyl
substituents, such as methyl, ethyl, propyl, t-butyl, and the like,
but also alkyl substituents bearing further substituents known in
the art, such as hydroxy, alkoxy, alkylsulfonyl, halogen atoms,
cyano, nitro, amino, carboxyl, etc. Thus, "alkyl group" includes
ether groups, haloalkyls, nitroalkyls, carboxyalkyls,
hydroxyalkyls, sulfoalkyls, etc. On the other hand, the phrase
"alkyl moiety" is limited to the inclusion of only pure open chain
saturated hydrocarbon alkyl substituents, such as methyl, ethyl,
propyl, t-butyl, and the like.
[0030] For the R.sup.1 and R.sup.2 groups in the carboxylate
complexes of the above formulas H or (C.sub.1-C.sub.30)organic
groups are preferred, H or (C.sub.1-C.sub.20)organic groups are
more preferred, and H or (C.sub.1-C.sub.8)organic groups are most
preferred. Of the organic groups, nonaromatic groups (e.g.,
aliphatic groups and alicyclic groups, which may or may not include
unsaturation, and which may or may not include heteroatoms such as
N, O, S, P, Si, etc.) are preferred. Of these, the aliphatic groups
are more preferred, and alkyl moieties are most preferred.
[0031] For the R.sup.3, R.sup.4, R.sup.5, R.sup.6, and R.sup.7
groups of the polyamine ligands in the carboxylate complexes of the
above formulas, which may be the same or different, H or
(C.sub.1-C.sub.10)organic groups are preferred, and H or
(C.sub.1-C.sub.5)organic groups are more preferred. Of the organic
groups, heteroatom-free groups (e.g., aromatic groups, aliphatic
groups and alicyclic groups, which may or may not include
unsaturation,but which do not include heteroatoms) are preferred.
Of these, the aliphatic groups are more preferred, and alkyl
moieties are most preferred.
[0032] In the carboxylate complexes of the above formulas, M refers
to a metal or metalloid in the Periodic Table, including alkali
metals (Group IA), alkaline earth metals (Group IIA), transition
metals, lanthanides, actinides, as well as the metals and
metalloids from Groups IIIA, IVA, VA, and VIA. For certain
embodiments, M is a metal or metalloid of Groups IA, IIA, IIIA,
IIIB, and lanthanides. For other embodiments, M is a metal or
metalloid of Groups IVB and VB. Particularly preferred elements of
M are Ba, Sr, Nb, Ta, Ti, and Bi.
[0033] The carboxylate complexes of the present invention can be
prepared by a variety of methods known to one of skill in the art.
For example, the carboxylate complexes containing polyamine ligands
can be prepared by reacting a metal or metal alkoxide with
carboxylic acid in the presence of a polyamine.
[0034] As stated above, the use of the carboxylate complexes and
methods of forming oxide films of the present invention are
beneficial for a wide variety of thin film applications in
semiconductor structures, particularly those using high dielectric
materials or ferroelectric materials. For example, such
applications include capacitors such as planar cells, trench cells
(e.g., double sidewall trench capacitors), stacked cells (e.g.,
crown, V-cell, delta cell, multi-fingered, or cylindrical container
stacked capacitors), as well as field effect transistor
devices.
[0035] A specific example of where a film formed from the complexes
of the present invention would be useful is the ferroelectric
memory cell 10 of FIG. 1. The memory cell 10 includes a
ferroelectric material 11, which is prepared by depositing one or
more of the complexes discussed herein using chemical vapor
techniques, between two electrodes 12 and 13, which are typically
made of platinum, although other metals such as gold and aluminum
can also be used. The bottom electrode 13 is typically in contact
with a silicon-containing layer 14, such as an n-type or p-type
silicon substrate, silicon dioxide, glass, etc.
[0036] The method of the present invention can be used to deposit a
metal-or metalloid-containing film, preferably an oxide film, on a
variety of substrates, such as a semiconductor wafer (e.g., silicon
wafer, gallium arsenide wafer, etc.), glass plate, etc., and on a
variety of surfaces of the substrates, whether it be directly on
the substrate itself or on a layer of material deposited on the
substrate as in a semiconductor substrate assembly. The oxide film
is deposited upon thermal decomposition of a carboxylate complex,
preferably one that is either liquid at the temperature of
deposition or soluble in a suitable solvent that is not detrimental
to the substrate, other layers thereon, etc. In particularly
preferred embodiments, however, solvents are not used; rather, the
metal or metalloid carboxylate complexes are liquid and used neat.
The method of the present invention utilizes standard vapor
deposition techniques, such as flash vaporization, bubbling,
etc.
[0037] Conventional bubbler technology can be used to form films
from the carboxylate complexes described above. In conventional
bubbler technology, a carrier gas, typically nitrogen, is bubbled
through the precursor (which is either a liquid or is dissolved in
a liquid solvent) to sweep some of the precursor molecules into the
processing chamber.
[0038] Alternatives to conventional bubbler technology include an
approach wherein the precursor is heated and vapors are drawn off
and controlled by a vapor mass flow controller. Further, another
way is to pump the gas through the precursor using either a very
precise metering pump or a liquid mass flow controller up to the
point where it enters the reaction chamber. At that point, it can
either be flash vaporized or injected directly into a mixing
chamber and showerhead where it is vaporized. As described in the
article entitled, "Metalorganic Chemical Vapor Deposition By Pulsed
Liquid Injection Using An Ultrasonic Nozzle: Titanium Dioxide on
Sapphire from Titanium (IV) Isopropoxide," by Versteeg, et al.,
Journal of the American Ceramic Society, 78, 2763-2768 (1995) a
metalorganic CVD process utilizes pulsed on/off liquid injection in
conjunction with atomization by an ultrasonic, piezoelectrically
driven nozzle to deliver such metalorganic precursors. The pulse
injection is said to allow control of film deposition rates, as
fine as monolayers per pulse. The ultrasonic nozzle provides a mist
of droplets into the processing chamber of a reactor for
reproducible vaporization of the liquid precursor. Such a delivery
system performs the vaporization in the processing chamber.
[0039] The carboxylate complexes described herein are particularly
well suited for use with vapor deposition systems, as described in
copending application U.S. Ser. No. ______ entitled "Method and
Apparatus for Vaporizing Liquid Precursors and System for Using
Same," filed on even date herewith.
[0040] Generally, using the method described therein, the
vaporization of a liquid precursor or precursor dissolved in a
liquid medium is carried out in two stages. First, the precursor is
atomized or nebulized generating high surface area microdroplets or
mist. In the second stage, the constituents of the microdroplets or
mist are vaporized by intimate mixture of the heated carrier gas.
This two stage vaporization approach provides a reproducible
delivery for precursors (either liquid or dissolved in a liquid
medium) and provides reasonable growth rates, particularly in
device applications with small dimensions.
[0041] As shown in FIG. 2, vapor deposition system 20 includes the
CVD precursor vaporizer 22 and process chamber or reaction chamber
24. The CVD precursor vaporizer 22 includes a heated vaporization
zone 30 defined by housing 32. The heated vaporization zone 30
includes a vapor flow path from a microdroplet generating device or
atomizer 40 to the process chamber 24. The heated housing 32
includes at one end a directing device 50 for directing the
vaporized liquid precursor into the process chamber 24. The
directing device may include any known means of directing the
vaporized liquid precursor from the vapor flow path into the
process chamber 24 for deposition on a substrate, such as wafer 25.
As shown in FIG. 2, the directing device includes a showerhead
50.
[0042] The microdroplet generating device or atomizer 40 generates
high surface area microdroplets, for example, droplets of
approximately 20 micrometers in diameter (although, generally,
microdroplets may be defined as any droplet having a mean diameter
less than about 1000 micrometers in diameter). The atomizer 40 may
include an ultrasonic nebulizer such as that available from
Sono-Tek Corp., Poughkeepsie, N.Y. or Sonics & Materials, Inc.,
Danbury, Conn. The ultrasonic nebulizer, as is known to one skilled
in the art, includes, for example, a nozzle 36 containing
piezoelectric transducers that create standing vibrations along the
nozzle body to generate droplets or mist for dispensing through a
tip of a nozzle.
[0043] Alternatively, the atomizer 40 may include an electrostatic
sprayer, such as that available from Binks, Franklin Park, Ill. The
electrostatic sprayer as is known to one of skill in the art,
generates the droplets for dispensing into the vaporization zone
using electrostatic charge to separate the liquid precursor into
droplets. Further, the mist or microdroplets may also be created
utilizing a forced gas, or in other words, a bubbler that produces
the fine mist of microdroplets utilizing a series of baffles to
obtain the high surface area microdroplet.
[0044] The atomizer 40 is provided with a liquid precursor by a
flow controller or liquid pump 42. Any flow controller, such as,
for example, commonly available mass flow controllers, that provide
a flow of liquid precursor to the atomizer 40 in a reproducible
fashion may be utilized.
[0045] The nozzle 46 of atomizer 40 is sealingly positioned with
its open end tip extending into the vaporization zone 30. The
nozzle 46 may be in a fixed position or its position may be
variable for movement within the vaporization zone 30. Such a
variably positioned nozzle may be utilized to change the length of
the vapor flow path in order to decrease or lengthen the residence
time of the microdroplets or mist 48 in the vaporization zone
30.
[0046] The microdroplets are flash vaporized by contacting them
with a heated carrier gas 54 (e.g., helium, nitrogen, argon).
Heated carrier gas 54 is provided to the heated vaporization zone
30 through port 55 and by way of a heated gas line 34. The heated
gas line 34 includes heating elements 38 for heating the gas. The
gas is heated by a gas heater 52 and the flow of the heated gas is
controlled by flow controller 60. Flow controller may be any flow
controller, such as, for example, commonly available mass flow
controllers, that provide a flow of gas to the vaporization zone in
a reproducible fashion where it is intimately mixed with the
microdroplets 48 from atomizer 40.
[0047] The heated carrier gas is of a temperature so as to be the
primary source of heat required for vaporizing the microdroplets
48. For example, depending on the necessary heat required for
vaporizing the microdroplets, the gas may be of a temperature in
the range of about -10.degree. C. to about 500.degree. C.,
preferably about 30.degree. C. to about 250.degree. C. The
temperature of the heated carrier gas will also vary depending on
the temperature of the liquid precursor which will typically vary
from about 10.degree. C. to about 100.degree. C., and any other
applicable vaporization process parameters, such as flow rates,
etc.
[0048] The microdroplets 48 will come into contact with the heated
carrier gas 54 for flash vaporization by the heated carrier gas 54
in the vaporization zone 30. Every microdroplet should be in
intimate contact with the heated carrier gas 54 for instantaneous
heating and vaporization thereof. The vaporization zone 30 allows
for sufficient residence time to complete vaporization before the
components of the liquid precursor 36 are carried into the CVD
process chamber 24.
[0049] The heated housing 32 defines the heated vaporization zone
30 and includes walls 37 heated by heating elements 38 to maintain
the temperature of the carrier gas and the liquid precursor
microdroplet mixture to a temperature that deters condensation of
the liquid precursor on the walls 37 of the heated housing 32. The
heated vaporization zone 30 is controlled to maintain a
substantially constant temperature along the vapor flow path
extending from the atomizer to the process chamber.
[0050] Further, flow rate of the heated carrier gas 54 is
controlled by the flow controller 60 so as to provide a sufficient
flow rate to also keep the precursor from decomposing on the walls
37 of the heated housing 32. The flow rate of the heated carrier
gas 54 under the control of flow controller 60 also provides
control of the residence time of the microdroplets within the
heated vaporization zone 30.
[0051] Various combinations of carrier gases and/or reaction gases
can be used in the methods of the present invention. They can be
introduced into the chemical vapor deposition chamber in a variety
of manners, such as directly into the vaporization chamber, in
combination with the precursor, in combination (or in place of) the
carrier gas.
[0052] Although a specific vapor deposition process is described by
reference to FIG. 2, the method of the present invention is not
limited to being used with the specific vapor deposition apparatus
shown. Various CVD process chambers or reaction chambers can be
used, including hot wall or cold wall reactors, atmospheric or
reduced pressure reactors, as well as plasma enhanced reactors.
Furthermore, the method of the present invention is not limited to
any specific vapor deposition technique.
[0053] The following examples are offered to further illustrate the
various specific and preferred embodiments and techniques. It
should be understood, however, that many variations and
modifications may be made while remaining within the scope of the
present invention.
EXAMPLES
Example 1
Preparation of
Sr[O.sub.2CC(CH.sub.3).sub.3].sub.2[(CH.sub.3).sub.2NCH.sub-
.2CH.sub.2N(CH.sub.3)CH.sub.2CH.sub.2N(CH.sub.3).sub.2]
[0054] A flask is charged with 8.76 g (0.1 mol) of strontium
granules in an inert atmosphere. To this is added 200 mL of diethyl
ether (anhydrous) and 17.3 g (0.1 mol) of N,N,N',N',N"-pentanethyl
diethylenetriamine. The strontium is then oxidized by slow addition
of 20.42 g (0.2 mol) of trimethylacetic acid. Evolution of
dihydrogen is observed during addition of the acid. The strontium
is allowed to be completely consumed by stirring for 18 hours. The
product is then purified by crystallization by removing most of the
diethyl ether in vacuo, cooling the flask, and filtering the
colorless crystalline solid.
Example 2
Preparation of Bi[O.sub.2CC(CH.sub.3).sub.3].sub.3
[0055] The compound is prepared as described in S. J. Troyanov et
al., J. Chem. Soc. Chem. Commun., 335 (1993).
Example 3
Preparation of Ta[O.sub.2CC(CH.sub.3).sub.3].sub.5
[0056] A flask is charged with 10.0 g (0.025 mol) of tantalum(V)
ethoxide in an inert atmosphere, and the flask equipped with a
distillation head. To this is added 100 mL of pentane (anhydrous).
The resulting solution is then reacted with 12.57 g (0.123 mol) of
trimethylacetic acid. After the reaction is complete, the ethanol
byproduct is removed by distilling off 50 mL of solvent. The
product is then collected by filtration and dried in vacuo.
Example 4
Preparation of SrBi.sub.2Ta.sub.2O.sub.9 Ferroelectric Thin
Film
[0057] A patterned semiconductor wafer is loaded into a CVD chamber
and heated to 600.degree. C. A precursor solution is prepared by
dissolving 1 part
Sr[O.sub.2CC(CH.sub.3).sub.3].sub.2[(CH.sub.3).sub.2NCH.sub.2CH.sub.-
2N(CH.sub.3)CH.sub.2CH.sub.2N(CH.sub.3).sub.2], 2 parts
Bi[O.sub.2CC(CH.sub.3).sub.3].sub.3, and 2 parts
Ta[O.sub.2CC(CH.sub.3).s- ub.3].sub.5 in heptane, with addition of
1 part N,N,N'N'N"-pentamnethyldie- thylenetriamine for assistance
in stabilizing the strontium complex. This solution is introduced
into the process chamber as a vapor, using the apparatus shown in
FIG. 2. Input carrier gas is preheated to 190.degree. C. using a
flow of 100 sccm. Oxygen is added to the process chamber by means
of another inlet at a flow rate of 400 sccm. The deposition is
carried out until a desired SrBi.sub.2Ta.sub.2O.sub.9 film
thickness is obtained on the wafer.
[0058] The foregoing detailed description and examples have been
given for clarity of understanding only. No unnecessary limitations
are to be understood therefrom. The invention is not limited to the
exact details shown and described, for variations obvious to one
skilled in the art will be included within the invention defined by
the claims. The complete disclosures of all patents, patent
documents, and publications listed herein are incorporated by
reference, as if each were individually incorporated by
reference.
* * * * *