ZUNIGA PEREZ; Jesus

Patent Applications and Registrations

Patent applications and USPTO patent grants for ZUNIGA PEREZ; Jesus.The latest application filed is for "method for producting an optoelectronic device comprising microleds".

Company Profile

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ZUNIGA PEREZ; Jesus - Biot FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producting an optoelectronic device comprising microleds App 20220199853 - FEUILLET; Guy ; et al.	2022-06-23
Method making it possible to obtain on a crystalline substrate a semi-polar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminium (Al) Grant 11,139,167 - El Khoury Maroun , et al. October 5, 2	2021-10-05
Process For Obtaining A Nitride Layer App 20210164126 - FEUILLET; Guy ; et al.	2021-06-03
Method of making a semi-polar nitride layer on a crystalline substrate Grant 10,892,378 - Feuillet , et al. January 12, 2	2021-01-12
Optoelectronic device and method for manufacturing same Grant 10,651,341 - Amstatt , et al.	2020-05-12
Method for obtaining a semi-polar nitride layer on a crystalline substrate Grant 10,553,426 - Feuillet , et al. Fe	2020-02-04
Optoelectronic Device And Method For Manufacturing Same App 20190363219 - Amstatt; Beno t ; et al.	2019-11-28
Optoelectronic device comprising three-dimensional electroluminescent diodes emitting at different wavelengths Grant 10,424,692 - Amstatt , et al. Sept	2019-09-24
Method Making It Possible To Obtain A Semi-polar Nitride Layer On A Crystalline Substrate App 20190081204 - FEUILLET; Guy ; et al.	2019-03-14
Method For Obtaining A Semi-polar Nitride Layer On A Crystalline Substrate App 20180330941 - FEUILLET; Guy ; et al.	2018-11-15
Optoelectronic Device And Method For Manufacturing Same App 20180277717 - AMSTATT; Beno t ; et al.	2018-09-27
Method Making It Possible To Obtain On A Crystalline Substrate A Semi-polar Layer Of Nitride Obtained With At Least One Of The Following Materials: Gallium (ga), Indium (in) And Aluminium (al) App 20180182622 - EL KHOURY MAROUN; Michel ; et al.	2018-06-28

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