Zorinsky; Eldon J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zorinsky; Eldon J..The latest application filed is for "method of forming a recessed contact bipolar transistor and field effect device".

Company Profile

0.7.0

Zorinsky; Eldon J. - Plano TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of forming a recessed contact bipolar transistor and field effect device Grant 5,075,241 - Spratt , et al. December 24, 1	1991-12-24
Method for forming a recessed contact bipolar transistor and field effect transistor Grant 4,985,744 - Spratt , et al. January 15, 1	1991-01-15
Recessed contact bipolar transistor and method Grant 4,897,703 - Spratt , et al. January 30, 1	1990-01-30
Anadization system with remote voltage sensing and active feedback control capabilities Grant 4,891,103 - Zorinsky , et al. January 2, 1	1990-01-02
Anodizable strain layer for SOI semiconductor structures Grant 4,849,370 - Spratt , et al. July 18, 1	1989-07-18
Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer Grant 4,810,667 - Zorinsky , et al. March 7, 1	1989-03-07
Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon Grant 4,628,591 - Zorinsky , et al. December 16, 1	1986-12-16

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