Zojaji; Ali

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zojaji; Ali.The latest application filed is for "etchant treatment processes for substrate surfaces and chamber surfaces".

Company Profile

0.16.14

Zojaji; Ali - Santa Clara CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Pre-heat ring designs to increase deposition uniformity and substrate throughput Grant 9,890,455 - Myo , et al. February 13, 2	2018-02-13
Use of CL2 and/or HCL during silicon epitaxial film formation Grant 8,586,456 - Ye , et al. November 19, 2	2013-11-19
Etchant treatment processes for substrate surfaces and chamber surfaces Grant 8,445,389 - Zojaji , et al. May 21, 2	2013-05-21
Pre-heat Ring Designs To Increase Deposition Uniformity And Substrate Throughput App 20120103263 - MYO; NYI O. ; et al.	2012-05-03
Etchant Treatment Processes For Substrate Surfaces And Chamber Surfaces App 20120108039 - Zojaji; Ali ; et al.	2012-05-03
Etchant treatment processes for substrate surfaces and chamber surfaces Grant 8,093,154 - Zojaji , et al. January 10, 2	2012-01-10
Methods of forming carbon-containing silicon epitaxial layers Grant 8,029,620 - Kim , et al. October 4, 2	2011-10-04
Use Of Cl2 And/or Hcl During Silicon Epitaxial Film Formation App 20110230036 - Ye; Zhiyuan ; et al.	2011-09-22
Use of CL2 and/or HCL during silicon epitaxial film formation Grant 7,960,256 - Ye , et al. June 14, 2	2011-06-14
Use Of Cl2 And/or Hcl During Silicon Epitaxial Film Formation App 20100221902 - Ye; Zhiyuan ; et al.	2010-09-02
Method of ultra-shallow junction formation using Si film alloyed with carbon Grant 7,732,269 - Kim , et al. June 8, 2	2010-06-08
Use of Cl2 and/or HCl during silicon epitaxial film formation Grant 7,732,305 - Ye , et al. June 8, 2	2010-06-08
Use of Cl2 and/or HCl during silicon epitaxial film formation Grant 7,682,940 - Ye , et al. March 23, 2	2010-03-23
Gas manifolds for use during epitaxial film formation Grant 7,674,337 - Ishikawa , et al. March 9, 2	2010-03-09
Pre-cleaning of substrates in epitaxy chambers Grant 7,651,948 - Kim , et al. January 26, 2	2010-01-26
Carbon precursors for use during silicon epitaxial film formation Grant 7,598,178 - Samoilov , et al. October 6, 2	2009-10-06
Pre-cleaning of substrates in epitaxy chambers App 20080245767 - Kim; Yihwan ; et al.	2008-10-09
Carbon Precursors For Use During Silicon Epitaxial Film Formation App 20080044932 - SAMOILOV; ARKADII V. ; et al.	2008-02-21
Methods Of Forming Carbon-containing Silicon Epitaxial Layers App 20080022924 - Kim; Yihwan ; et al.	2008-01-31
Gas Manifolds For Use During Epitaxial Film Formation App 20070259112 - Ishikawa; David ; et al.	2007-11-08
Method Of Ultra-shallow Junction Formation Using Si Film Alloyed With Carbon App 20070256627 - KIM; YIHWAN ; et al.	2007-11-08
Method And System For Deposition Tuning In An Epitaxial Film Growth Apparatus App 20070128780 - Aderhold; Wolfgang R. ; et al.	2007-06-07
Method and system for deposition tuning in an epitaxial film growth apparatus Grant 7,195,934 - Aderhold , et al. March 27, 2	2007-03-27
Method and system for deposition tuning in an epitaxial film growth apparatus App 20070010033 - Aderhold; Wolfgang R. ; et al.	2007-01-11
Use of Cl2 and/or HCl during silicon epitaxial film formation App 20060260538 - Ye; Zhiyuan ; et al.	2006-11-23
Etchant treatment processes for substrate surfaces and chamber surfaces App 20060169669 - Zojaji; Ali ; et al.	2006-08-03
Use of CL2 and/or HCL during silicon epitaxial film formation App 20060115933 - Ye; Zhiyuan ; et al.	2006-06-01

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