Zippelius; Bernd

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zippelius; Bernd.The latest application filed is for "sic device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof".

Company Profile

10.10.12

Zippelius; Bernd - Erlangen DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device including a passivation structure and manufacturing method Grant 11,211,303 - Konrath , et al. December 28, 2	2021-12-28
Silicon carbide semiconductor component with edge termination structure Grant 11,145,755 - Wehrhahn-Kilian , et al. October 12, 2	2021-10-12
Silicon carbide semiconductor component Grant 11,063,144 - Rupp , et al. July 13, 2	2021-07-13
SiC Device with Channel Regions Extending Along at least one of the (1-100) Plane and the (-1100) Plane and Methods of Manufacturing Thereof App 20210118986 - Aichinger; Thomas ; et al.	2021-04-22
SiC power semiconductor device with integrated Schottky junction Grant 10,985,248 - Leendertz , et al. April 20, 2	2021-04-20
SiC device and methods of manufacturing thereof Grant 10,896,952 - Aichinger , et al. January 19, 2	2021-01-19
Semiconductor device with junction termination zone Grant 10,861,964 - Rupp , et al. December 8, 2	2020-12-08
Semiconductor device with transistor cells and a drift structure and method of manufacturing Grant 10,700,182 - Aichinger , et al.	2020-06-30
SiC Device and Methods of Manufacturing Thereof App 20200194544 - Aichinger; Thomas ; et al.	2020-06-18
Semiconductor Device Including A Passivation Structure And Manufacturing Method App 20200185297 - Konrath; Jens Peter ; et al.	2020-06-11
SiC Power Semiconductor Device with Integrated Schottky Junction App 20200161433 - Leendertz; Caspar ; et al.	2020-05-21
SiC trench transistor device and methods of manufacturing thereof Grant 10,586,845 - Aichinger , et al.	2020-03-10
Semiconductor device with termination structure including field zones and method of manufacturing Grant 10,541,325 - Elpelt , et al. Ja	2020-01-21
Semiconductor Device Including Silicon Carbide Body And Transistor Cells App 20200006544 - SIEMIENIEC; Ralf ; et al.	2020-01-02
Silicon Carbide Semiconductor Component App 20190296141 - Rupp; Roland ; et al.	2019-09-26
Silicon Carbide Semiconductor Component with Edge Termination Structure App 20190165159 - Wehrhahn-Kilian; Larissa ; et al.	2019-05-30
Semiconductor Device with Junction Termination Zone App 20190131446 - Rupp; Roland ; et al.	2019-05-02
Semiconductor Device with Termination Structure Including Field Zones and Method of Manufacturing App 20190131447 - Elpelt; Rudolf ; et al.	2019-05-02
Semiconductor device with diode region and trench gate structure Grant 10,211,306 - Siemieniec , et al. Feb	2019-02-19
Semiconductor Device with Transistor Cells and a Drift Structure and Method of Manufacturing App 20180331204 - Aichinger; Thomas ; et al.	2018-11-15
Semiconductor Device with Diode Region and Trench Gate Structure App 20180158920 - Siemieniec; Ralf ; et al.	2018-06-07
Wide-Bandgap Semiconductor Device with Trench Gate Structures App 20170345905 - Siemieniec; Ralf ; et al.	2017-11-30

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