loadpatents
Patent applications and USPTO patent grants for Zhu; Baofu.The latest application filed is for "transistors with separately-formed source and drain".
Patent | Date |
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Asymmetric source drain structures Grant 11,362,178 - Shu , et al. June 14, 2 | 2022-06-14 |
Epitaxial semiconductor material regions for transistor devices and methods of forming same Grant 11,362,177 - Malinowski , et al. June 14, 2 | 2022-06-14 |
Transistors with an asymmetrical source and drain Grant 11,239,366 - Li , et al. February 1, 2 | 2022-02-01 |
Dual trench isolation structures Grant 11,239,315 - Mishra , et al. February 1, 2 | 2022-02-01 |
Epitaxial semiconductor material regions for transistor devices and methods of forming same Grant 11,205,699 - Malinowski , et al. December 21, 2 | 2021-12-21 |
Transistors with a hybrid source or drain Grant 11,177,385 - Wang , et al. November 16, 2 | 2021-11-16 |
Source/drain regions for transistor devices and methods of forming same Grant 11,094,822 - Malinowski , et al. August 17, 2 | 2021-08-17 |
Transistors With Separately-formed Source And Drain App 20210249508 - Shu; Jiehui ;   et al. | 2021-08-12 |
Transistors With A Hybrid Source Or Drain App 20210242344 - Wang; Haiting ;   et al. | 2021-08-05 |
Dual Trench Isolation Structures App 20210242306 - MISHRA; Shiv Kumar ;   et al. | 2021-08-05 |
Transistors With An Asymmetrical Source And Drain App 20210242339 - Li; Wenjun ;   et al. | 2021-08-05 |
Novel Epitaxial Semiconductor Material Regions For Transistor Devices And Methods Of Forming Same App 20210233999 - Malinowski; Arkadiusz ;   et al. | 2021-07-29 |
Novel Source/drain Regions For Transistor Devices And Methods Of Forming Same App 20210234045 - Malinowski; Arkadiusz ;   et al. | 2021-07-29 |
Transistors with separately-formed source and drain Grant 11,075,268 - Shu , et al. July 27, 2 | 2021-07-27 |
Asymmetric Source Drain Structures App 20210143254 - SHU; Jiehui ;   et al. | 2021-05-13 |
Novel Epitaxial Semiconductor Material Regions For Transistor Devices And Methods Of Forming Same App 20210118993 - Malinowski; Arkadiusz ;   et al. | 2021-04-22 |
N-well resistor Grant 10,985,244 - Pandey , et al. April 20, 2 | 2021-04-20 |
Transistors With Separately-formed Source And Drain App 20210050419 - Shu; Jiehui ;   et al. | 2021-02-18 |
Structure With Counter Doping Region Between N And P Wells Under Gate Structure App 20210043766 - Zhu; Baofu ;   et al. | 2021-02-11 |
STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method Grant 10,910,276 - Shi , et al. February 2, 2 | 2021-02-02 |
N-well Resistor App 20200411638 - PANDEY; Shesh Mani ;   et al. | 2020-12-31 |
Device with diffusion blocking layer in source/drain region Grant 10,164,099 - Pandey , et al. Dec | 2018-12-25 |
Finfet Device And Method Of Manufacturing App 20180233415 - PANDEY; Shesh Mani ;   et al. | 2018-08-16 |
High-voltage and analog bipolar devices Grant 10,020,386 - Singh , et al. July 10, 2 | 2018-07-10 |
Device With Diffusion Blocking Layer In Source/drain Region App 20180175198 - Pandey; Shesh Mani ;   et al. | 2018-06-21 |
Sub-fin doping method Grant 10,002,793 - Shu , et al. June 19, 2 | 2018-06-19 |
FinFET device and method of manufacturing Grant 9,966,313 - Pandey , et al. May 8, 2 | 2018-05-08 |
Notched Fin Structures And Methods Of Manufacture App 20180108732 - Shu; Jiehui ;   et al. | 2018-04-19 |
Device with diffusion blocking layer in source/drain region Grant 9,947,788 - Pandey , et al. April 17, 2 | 2018-04-17 |
Finfet Device And Method Of Manufacturing App 20180040516 - PANDEY; Shesh Mani ;   et al. | 2018-02-08 |
Method, Apparatus, And System For Increasing Drive Current Of Finfet Device App 20170309623 - Pandey; Shesh Mani ;   et al. | 2017-10-26 |
Method For Forming A Doped Region In A Fin Using A Variable Thickness Spacer And The Resulting Device App 20170288041 - Pandey; Shesh Mani ;   et al. | 2017-10-05 |
Device With Diffusion Blocking Layer In Source/drain Region App 20170229578 - Pandey; Shesh Mani ;   et al. | 2017-08-10 |
High voltage device Grant 9,099,434 - Zhang , et al. August 4, 2 | 2015-08-04 |
High Voltage Device App 20140332884 - ZHANG; Guowei ;   et al. | 2014-11-13 |
Semiconductor device having controlled final metal critical dimension Grant 8,846,464 - Liu , et al. September 30, 2 | 2014-09-30 |
Semiconductor Device Having Controlled Final Metal Critical Dimension App 20140273389 - Liu; Bingwu ;   et al. | 2014-09-18 |
High voltage device Grant 8,790,966 - Zhang , et al. July 29, 2 | 2014-07-29 |
High Voltage Device App 20130093012 - ZHANG; Guowei ;   et al. | 2013-04-18 |
Method of forming a high voltage device Grant 8,053,319 - Liu , et al. November 8, 2 | 2011-11-08 |
High Voltage Device App 20100213544 - LIU; Junwen ;   et al. | 2010-08-26 |
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