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name:-0.025053024291992
name:-0.0040321350097656
Zhu; Baofu Patent Filings

Zhu; Baofu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zhu; Baofu.The latest application filed is for "transistors with separately-formed source and drain".

Company Profile
3.20.23
  • Zhu; Baofu - Clifton Park NY
  • Zhu; Baofu - Hillsboro OR
  • Zhu; Baofu - Singapore SG
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Asymmetric source drain structures
Grant 11,362,178 - Shu , et al. June 14, 2
2022-06-14
Epitaxial semiconductor material regions for transistor devices and methods of forming same
Grant 11,362,177 - Malinowski , et al. June 14, 2
2022-06-14
Transistors with an asymmetrical source and drain
Grant 11,239,366 - Li , et al. February 1, 2
2022-02-01
Dual trench isolation structures
Grant 11,239,315 - Mishra , et al. February 1, 2
2022-02-01
Epitaxial semiconductor material regions for transistor devices and methods of forming same
Grant 11,205,699 - Malinowski , et al. December 21, 2
2021-12-21
Transistors with a hybrid source or drain
Grant 11,177,385 - Wang , et al. November 16, 2
2021-11-16
Source/drain regions for transistor devices and methods of forming same
Grant 11,094,822 - Malinowski , et al. August 17, 2
2021-08-17
Transistors With Separately-formed Source And Drain
App 20210249508 - Shu; Jiehui ;   et al.
2021-08-12
Transistors With A Hybrid Source Or Drain
App 20210242344 - Wang; Haiting ;   et al.
2021-08-05
Dual Trench Isolation Structures
App 20210242306 - MISHRA; Shiv Kumar ;   et al.
2021-08-05
Transistors With An Asymmetrical Source And Drain
App 20210242339 - Li; Wenjun ;   et al.
2021-08-05
Novel Epitaxial Semiconductor Material Regions For Transistor Devices And Methods Of Forming Same
App 20210233999 - Malinowski; Arkadiusz ;   et al.
2021-07-29
Novel Source/drain Regions For Transistor Devices And Methods Of Forming Same
App 20210234045 - Malinowski; Arkadiusz ;   et al.
2021-07-29
Transistors with separately-formed source and drain
Grant 11,075,268 - Shu , et al. July 27, 2
2021-07-27
Asymmetric Source Drain Structures
App 20210143254 - SHU; Jiehui ;   et al.
2021-05-13
Novel Epitaxial Semiconductor Material Regions For Transistor Devices And Methods Of Forming Same
App 20210118993 - Malinowski; Arkadiusz ;   et al.
2021-04-22
N-well resistor
Grant 10,985,244 - Pandey , et al. April 20, 2
2021-04-20
Transistors With Separately-formed Source And Drain
App 20210050419 - Shu; Jiehui ;   et al.
2021-02-18
Structure With Counter Doping Region Between N And P Wells Under Gate Structure
App 20210043766 - Zhu; Baofu ;   et al.
2021-02-11
STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method
Grant 10,910,276 - Shi , et al. February 2, 2
2021-02-02
N-well Resistor
App 20200411638 - PANDEY; Shesh Mani ;   et al.
2020-12-31
Device with diffusion blocking layer in source/drain region
Grant 10,164,099 - Pandey , et al. Dec
2018-12-25
Finfet Device And Method Of Manufacturing
App 20180233415 - PANDEY; Shesh Mani ;   et al.
2018-08-16
High-voltage and analog bipolar devices
Grant 10,020,386 - Singh , et al. July 10, 2
2018-07-10
Device With Diffusion Blocking Layer In Source/drain Region
App 20180175198 - Pandey; Shesh Mani ;   et al.
2018-06-21
Sub-fin doping method
Grant 10,002,793 - Shu , et al. June 19, 2
2018-06-19
FinFET device and method of manufacturing
Grant 9,966,313 - Pandey , et al. May 8, 2
2018-05-08
Notched Fin Structures And Methods Of Manufacture
App 20180108732 - Shu; Jiehui ;   et al.
2018-04-19
Device with diffusion blocking layer in source/drain region
Grant 9,947,788 - Pandey , et al. April 17, 2
2018-04-17
Finfet Device And Method Of Manufacturing
App 20180040516 - PANDEY; Shesh Mani ;   et al.
2018-02-08
Method, Apparatus, And System For Increasing Drive Current Of Finfet Device
App 20170309623 - Pandey; Shesh Mani ;   et al.
2017-10-26
Method For Forming A Doped Region In A Fin Using A Variable Thickness Spacer And The Resulting Device
App 20170288041 - Pandey; Shesh Mani ;   et al.
2017-10-05
Device With Diffusion Blocking Layer In Source/drain Region
App 20170229578 - Pandey; Shesh Mani ;   et al.
2017-08-10
High voltage device
Grant 9,099,434 - Zhang , et al. August 4, 2
2015-08-04
High Voltage Device
App 20140332884 - ZHANG; Guowei ;   et al.
2014-11-13
Semiconductor device having controlled final metal critical dimension
Grant 8,846,464 - Liu , et al. September 30, 2
2014-09-30
Semiconductor Device Having Controlled Final Metal Critical Dimension
App 20140273389 - Liu; Bingwu ;   et al.
2014-09-18
High voltage device
Grant 8,790,966 - Zhang , et al. July 29, 2
2014-07-29
High Voltage Device
App 20130093012 - ZHANG; Guowei ;   et al.
2013-04-18
Method of forming a high voltage device
Grant 8,053,319 - Liu , et al. November 8, 2
2011-11-08
High Voltage Device
App 20100213544 - LIU; Junwen ;   et al.
2010-08-26

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