Zheng; Yuankai

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zheng; Yuankai.The latest application filed is for "magnetic elements of amorphous based dual free layer structures and recording devices using such elements".

Company Profile

14.114.85

Zheng; Yuankai - Fremont CA
Zheng; Yuankai - Bloomington MN US
Zheng; Yuankai - Freemont CA
Zheng; Yuankai - Singapore SG

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetic elements of amorphous based dual free layer structures and recording devices using such elements Grant 11,430,592 - Diao , et al. August 30, 2	2022-08-30
Magnetic sensor array with one TMR stack having two free layers Grant 11,415,645 - Zheng , et al. August 16, 2	2022-08-16
TMR sensor with magnetic tunnel junctions with shape anisotropy Grant 11,385,306 - Mauri , et al. July 12, 2	2022-07-12
Magnetic sensor array with dual TMR film Grant 11,385,305 - Zheng , et al. July 12, 2	2022-07-12
Magnetic Elements of Amorphous Based Dual Free Layer Structures and Recording Devices Using Such Elements App 20220093305 - DIAO; Zhitao ; et al.	2022-03-24
Spin torque oscillator with an antiferromagnetically coupled assist layer and methods of operating the same Grant 11,239,016 - Zheng , et al. February 1, 2	2022-02-01
Magnetic Sensor Array With Single TMR Film Plus Laser Annealing And Characterization App 20220005500 - ZHENG; Yuankai ; et al.	2022-01-06
MAMR head with synthetic antiferromagnetic (SAF) coupled notch Grant 11,211,083 - Zheng , et al. December 28, 2	2021-12-28
Large field range TMR sensor using free layer exchange pinning Grant 11,209,505 - Mauri , et al. December 28, 2	2021-12-28
TMR sensor with magnetic tunnel junctions with a free layer having an intrinsic anisotropy Grant 11,199,594 - Mauri , et al. December 14, 2	2021-12-14
Bottom leads chemical mechanical planarization for TMR magnetic sensors Grant 11,201,280 - Zhou , et al. December 14, 2	2021-12-14
Spin Torque Oscillator With An Antiferromagnetically Coupled Assist Layer And Methods Of Operating The Same App 20210375518 - Zheng; Yuankai ; et al.	2021-12-02
Spin Torque Oscillator With An Antiferromagnetically Coupled Assist Layer And Methods Of Operating The Same App 20210376793 - Zheng; Yuankai ; et al.	2021-12-02
Magnetic sensor array with single TMR film plus laser annealing and characterization Grant 11,170,806 - Zheng , et al. November 9, 2	2021-11-09
Dual free layer TMR magnetic field sensor Grant 11,169,227 - Hu , et al. November 9, 2	2021-11-09
Spin torque oscillator with an antiferromagnetically coupled assist layer and methods of operating the same Grant 11,171,605 - Zheng , et al. November 9, 2	2021-11-09
Magnetic sensor with serial resistor for asymmetric sensing field range Grant 11,169,228 - Wang , et al. November 9, 2	2021-11-09
Ultra-low RA and high TMR magnetic sensor with radiation reflective lead Grant 11,125,840 - Zheng , et al. September 21, 2	2021-09-21
Ultra-low RA and high TMR magnetic sensor with radiation reflective lead App 20210255256 - ZHENG; Yuankai ; et al.	2021-08-19
Magnetic Sensor Array with Single TMR Film Plus Laser Annealing and Characterization App 20210201943 - ZHENG; Yuankai ; et al.	2021-07-01
Magnetic Sensor with Dual TMR Films and the Method of Making the Same App 20210063502 - HU; Chih-Ching ; et al.	2021-03-04
Magnetic Sensor Array with Dual TMR Film App 20210063504 - ZHENG; Yuankai ; et al.	2021-03-04
Magnetic Sensor Array with Different RA TMR Film App 20210063507 - ZHENG; Yuankai ; et al.	2021-03-04
Dual Free Layer TMR Magnetic Field Sensor App 20210063508 - HU; Chih-Ching ; et al.	2021-03-04
Large Field Range TMR Sensor using Free Layer Exchange Pinning App 20210063505 - MAURI; Daniele ; et al.	2021-03-04
TMR Sensor with Magnetic Tunnel Junctions with a Free Layer Having an Intrinsic Anisotropy App 20210063500 - MAURI; Daniele ; et al.	2021-03-04
Magnetic Sensor with Serial Resistor for Asymmetric Sensing Field Range App 20210063509 - WANG; Yung-Hung ; et al.	2021-03-04
Magnetic Sensor Array With One TMR Stack Having Two Free Layers App 20210055361 - ZHENG; Yuankai ; et al.	2021-02-25
TMR Sensor with Magnetic Tunnel Junctions with Shape Anisotropy App 20210055360 - MAURI; Daniele ; et al.	2021-02-25
Bottom Leads Chemical Mechanical Planarization for TMR Magnetic Sensors App 20210057638 - ZHOU; Ronghui ; et al.	2021-02-25
Read Head Including Semiconductor Spacer And Long Spin Diffusion Length Nonmagnetic Conductive Material And Method Of Making The App 20200286508 - ZHENG; Yuankai ; et al.	2020-09-10
Read head including semiconductor spacer and long spin diffusion length nonmagnetic conductive material and method of making thereof Grant 10,755,733 - Zheng , et al. A	2020-08-25
Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with wedge shaped free layer Grant 10,249,329 - Hu , et al.	2019-04-02
Magnetic reader having a nonmagnetic insertion layer for the pinning layer Grant 10,242,700 - Jones , et al.	2019-03-26
Free layer magnetic reader that may have a reduced shield-to-shield spacing Grant 10,121,501 - Bertero , et al. November 6, 2	2018-11-06
Free layer only magnetic reader that may have a reduced shield-to-shield spacing and a multilayer side bias Grant 10,068,601 - Li , et al. September 4, 2	2018-09-04
Recording read heads with a multi-layer AFM layer methods and apparatuses Grant 10,008,219 - Zheng , et al. June 26, 2	2018-06-26
Magnetic Reader Having A Nonmagnetic Insertion Layer For The Pinning Layer App 20180075869 - JONES; Joshua ; et al.	2018-03-15
Method for providing a multilayer AFM layer in a read sensor Grant 9,858,951 - Zheng , et al. January 2, 2	2018-01-02
Magnetic reader having a nonmagnetic insertion layer for the pinning layer Grant 9,842,615 - Jones , et al. December 12, 2	2017-12-12
Magnetic read head with antiferromagentic layer Grant 9,830,936 - Li , et al. November 28, 2	2017-11-28
Magnetic read apparatus having multiple read sensors with reduced sensor spacing usable in two-dimensional magnetic recording applications Grant 9,786,305 - Li , et al. October 10, 2	2017-10-10
Free Layer Magnetic Reader That May Have A Reduced Shield-to-shield Spacing App 20170249959 - BERTERO; GERARDO A. ; et al.	2017-08-31
Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy Grant 9,705,072 - Li , et al. July 11, 2	2017-07-11
Free layer magnetic reader that may have a reduced shield-to-shield spacing Grant 9,666,214 - Bertero , et al. May 30, 2	2017-05-30
Magnetic reader having a crystal decoupling structure Grant 9,508,365 - Zheng , et al. November 29, 2	2016-11-29
Recording Read Heads With A Multi-layer Afm Layer Methods And Apparatuses App 20160260447 - ZHENG; YUANKAI ; et al.	2016-09-08
Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof Grant 9,396,742 - Yang , et al. July 19, 2	2016-07-19
Magnetic Read Head With Antiferromagentic Layer App 20160180870 - LI; SHAOPING ; et al.	2016-06-23
Spin Transfer Torque Tunneling Magnetoresistive Device Having A Laminated Free Layer With Perpendicular Magnetic Anisotropy App 20160163961 - Li; Shaoping ; et al.	2016-06-09
Recording read heads with a multi-layer AFM layer methods and apparatuses Grant 9,361,913 - Zheng , et al. June 7, 2	2016-06-07
Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy Grant 9,236,560 - Li , et al. January 12, 2	2016-01-12
Heated Afm Layer Deposition And Cooling Process For Tmr Magnetic Recording Sensor With High Pinning Field App 20150380026 - ZHENG; YUANKAI ; et al.	2015-12-31
Method of manufacturing a magnetic read head Grant 9,214,172 - Li , et al. December 15, 2	2015-12-15
Magnetic recording read transducer having a laminated free layer Grant 9,214,169 - Kaiser , et al. December 15, 2	2015-12-15
ST-RAM cells with perpendicular anisotropy Grant 9,165,625 - Wang , et al. October 20, 2	2015-10-20
Heated AFM layer deposition and cooling process for TMR magnetic recording sensor with high pinning field Grant 9,147,408 - Zheng , et al. September 29, 2	2015-09-29
Magnetic recording read transducer having a laminated free layer Grant 9,070,381 - Yang , et al. June 30, 2	2015-06-30
Process for providing a magnetic recording transducer with enhanced pinning layer stability Grant 9,064,534 - Zheng , et al. June 23, 2	2015-06-23
Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof Grant 9,053,719 - Yang , et al. June 9, 2	2015-06-09
Flux-closed STRAM with electronically reflective insulative spacer Grant 9,041,083 - Zheng , et al. May 26, 2	2015-05-26
Magnetic tunnel junction with electronically reflective insulative spacer Grant 9,030,864 - Zheng , et al. May 12, 2	2015-05-12
Magnetic Read Head With Antiferromagnetic Layer App 20150109702 - LI; SHAOPING ; et al.	2015-04-23
Sensor with positive coupling between dual ferromagnetic free layer laminates Grant 9,007,725 - Diao , et al. April 14, 2	2015-04-14
Process for providing a magnetic recording transducer having a smooth magnetic seed layer Grant 8,984,740 - Zheng , et al. March 24, 2	2015-03-24
Memory cell with phonon-blocking insulating layer Grant 8,860,157 - Zheng , et al. October 14, 2	2014-10-14
Magnetic recording sensor with AFM exchange coupled shield stabilization Grant 8,797,692 - Guo , et al. August 5, 2	2014-08-05
Magnetic memory element with multi-domain storage layer Grant 8,780,619 - Xi , et al. July 15, 2	2014-07-15
Magnetoresistive Sensor For A Magnetic Storage System Read Head, And Fabrication Method Thereof App 20140154529 - YANG; Cheng-Han ; et al.	2014-06-05
Magnetic stack with oxide to reduce switching current Grant 8,686,524 - Lou , et al. April 1, 2	2014-04-01
Magnetic memory with phonon glass electron crystal material Grant 8,687,413 - Zheng , et al. April 1, 2	2014-04-01
STRAM with composite free magnetic element Grant 8,681,539 - Zheng , et al. March 25, 2	2014-03-25
Magnetic stack having assist layers Grant 8,670,271 - Zheng , et al. March 11, 2	2014-03-11
Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer Grant 8,638,529 - Leng , et al. January 28, 2	2014-01-28
Magnetic sensor having a high spin polarization reference layer Grant 8,582,253 - Zheng , et al. November 12, 2	2013-11-12
Magnetic Memory Element with Multi-Domain Storage Layer App 20130292784 - Xi; Haiwen ; et al.	2013-11-07
Stram With Composite Free Magnetic Element App 20130229862 - Zheng; Yuankai ; et al.	2013-09-05
Magnetic Stack Having Assist Layers App 20130228884 - Zheng; Yuankai ; et al.	2013-09-05
Magnetic stack having reference layers with orthogonal magnetization orientation directions Grant 8,519,498 - Zheng , et al. August 27, 2	2013-08-27
Magnetic tunnel junction with compensation element Grant 8,508,988 - Zheng , et al. August 13, 2	2013-08-13
Memory Cell with Phonon-Blocking Insulating Layer App 20130200476 - Zheng; Yuankai ; et al.	2013-08-08
Perpendicular magnetic recording transducer with AFM insertion layer Grant 8,493,693 - Zheng , et al. July 23, 2	2013-07-23
Magnetic Memory With Phonon Glass Electron Crystal Material App 20130175647 - Zheng; Yuankai ; et al.	2013-07-11
Magnetic memory element with multi-domain storage layer Grant 8,482,967 - Xi , et al. July 9, 2	2013-07-09
Static magnetic field assisted resistive sense element Grant 8,466,524 - Zheng , et al. June 18, 2	2013-06-18
Static magnetic field assisted resistive sense element Grant 8,466,525 - Zheng , et al. June 18, 2	2013-06-18
Thermally assisted multi-bit MRAM Grant 8,462,543 - Zheng , et al. June 11, 2	2013-06-11
Flux-closed Stram With Electronically Reflective Insulative Spacer App 20130140659 - Zheng; Yuankai ; et al.	2013-06-06
Magnetic stack with oxide to reduce switching current Grant 8,426,222 - Lou , et al. April 23, 2	2013-04-23
Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer Grant 8,422,176 - Leng , et al. April 16, 2	2013-04-16
STRAM with composite free magnetic element Grant 8,422,279 - Zheng , et al. April 16, 2	2013-04-16
Magnetic memory with phonon glass electron crystal material Grant 8,416,619 - Zheng , et al. April 9, 2	2013-04-09
Magnetic stack having assist layer Grant 8,416,620 - Zheng , et al. April 9, 2	2013-04-09
Memory cell with phonon-blocking insulating layer Grant 8,405,171 - Zheng , et al. March 26, 2	2013-03-26
Flux-closed STRAM with electronically reflective insulative spacer Grant 8,362,534 - Zheng , et al. January 29, 2	2013-01-29
Magnetic Tunnel Junction With Electronically Reflective Insulative Spacer App 20130001718 - Zheng; Yuankai ; et al.	2013-01-03
Magnetic Stack Having Reference Layers With Orthogonal Magnetization Orientation Directions App 20130001720 - Zheng; Yuankai ; et al.	2013-01-03
Non Volatile Memory Including Stabilizing Structures App 20120299135 - Zheng; Yuankai ; et al.	2012-11-29
Magnetic stack having reference layers with orthogonal magnetization orientation directions Grant 8,294,227 - Zheng , et al. October 23, 2	2012-10-23
Magnetic tunnel junction with electronically reflective insulative spacer Grant 8,289,758 - Zheng , et al. October 16, 2	2012-10-16
Non volatile memory including stabilizing structures Grant 8,289,756 - Zheng , et al. October 16, 2	2012-10-16
Non-volatile memory cell with precessional switching Grant 8,289,759 - Wang , et al. October 16, 2	2012-10-16
Magnetic Tunnel Junction With Compensation Element App 20120257447 - Zheng; Yuankai ; et al.	2012-10-11
Magnetic Stack With Oxide To Reduce Switching Current App 20120241886 - Lou; Xiaohua ; et al.	2012-09-27
Thermally Assisted Multi-bit Mram App 20120230092 - Zheng; Yuankai ; et al.	2012-09-13
Magnetic stack with oxide to reduce switching current Grant 8,217,478 - Lou , et al. July 10, 2	2012-07-10
Magnetic tunnel junction with compensation element Grant 8,213,222 - Zheng , et al. July 3, 2	2012-07-03
Thermally assisted multi-bit MRAM Grant 8,199,564 - Zheng , et al. June 12, 2	2012-06-12
Spin-transfer torque memory self-reference read method Grant 8,194,444 - Zheng , et al. June 5, 2	2012-06-05
Static magnetic field assisted resistive sense element Grant 8,183,654 - Zheng , et al. May 22, 2	2012-05-22
Memory Cell With Phonon-Blocking Insulating Layer App 20120119313 - Zheng; Yuankai ; et al.	2012-05-17
Magnetic Tunnel Junction Cells Having Perpendicular Anisotropy And Enhancement Layer App 20120104522 - Jung; Wonjoon ; et al.	2012-05-03
Magnetic Memory Element With Multi-Domain Storage Layer App 20120106239 - Xi; Haiwen ; et al.	2012-05-03
Stram With Composite Free Magnetic Element App 20120039115 - Zheng; Yuankai ; et al.	2012-02-16
Magnetic Stack With Oxide To Reduce Switching Current App 20120021535 - Lou; Xiaohua ; et al.	2012-01-26
Magnetic Stack With Laminated Layer App 20120018788 - Zheng; Yuankai ; et al.	2012-01-26
Magnetic memory with phonon glass electron crystal material Grant 8,089,132 - Zheng , et al. January 3, 2	2012-01-03
Magnetic Tunnel Junction With Compensation Element App 20110298068 - Zheng; Yuankai ; et al.	2011-12-08
Variable write and read methods for resistive random access memory Grant 8,054,675 - Xi , et al. November 8, 2	2011-11-08
Magnetic Stack Having Reference Layers With Orthogonal Magnetization Orientation Directions App 20110260274 - Zheng; Yuankai ; et al.	2011-10-27
STRAM with composite free magnetic element Grant 8,045,366 - Zheng , et al. October 25, 2	2011-10-25
Magnetic stack with laminated layer Grant 8,039,913 - Zheng , et al. October 18, 2	2011-10-18
Thermally Assisted Multi-bit Mram App 20110242883 - Zheng; Yuankai ; et al.	2011-10-06
Static Magnetic Field Assisted Resistive Sense Element App 20110228597 - Zheng; Yuankai ; et al.	2011-09-22
Magnetic tunnel junction with compensation element Grant 8,023,316 - Zheng , et al. September 20, 2	2011-09-20
Flux-closed Stram With Electronically Reflective Insulative Spacer App 20110221016 - Zheng; Yuankai ; et al.	2011-09-15
Thermally assisted multi-bit MRAM Grant 8,004,883 - Zheng , et al. August 23, 2	2011-08-23
Magnetic stack having reference layers with orthogonal magnetization orientation directions Grant 7,999,338 - Zheng , et al. August 16, 2	2011-08-16
Static magnetic field assisted resistive sense element Grant 7,999,337 - Zheng , et al. August 16, 2	2011-08-16
Magnetic Memory With Phonon Glass Electron Crystal Material App 20110194335 - Zheng; Yuankai ; et al.	2011-08-11
Non-Volatile Memory Cell With Precessional Switching App 20110194337 - Wang; Xiaobin ; et al.	2011-08-11
Flux-closed STRAM with electronically reflective insulative spacer Grant 7,985,994 - Zheng , et al. July 26, 2	2011-07-26
Semiconductor device with thermally coupled phase change layers Grant 7,969,771 - Xi , et al. June 28, 2	2011-06-28
Static Magnetic Field Assisted Resistive Sense Element App 20110149642 - Zheng; Yuankai ; et al.	2011-06-23
Static Magnetic Field Assisted Resistive Sense Element App 20110149641 - Zheng; Yuankai ; et al.	2011-06-23
Variable Write And Read Methods For Resistive Random Access Memory App 20110134682 - Xi; Haiwen ; et al.	2011-06-09
Variable write and read methods for resistive random access memory Grant 7,952,917 - Xi , et al. May 31, 2	2011-05-31
STRAM with electronically reflective insulative spacer Grant 7,940,551 - Zheng , et al. May 10, 2	2011-05-10
Magnetic stack having assist layer Grant 7,936,598 - Zheng , et al. May 3, 2	2011-05-03
Non-volatile memory cell with precessional switching Grant 7,936,592 - Wang , et al. May 3, 2	2011-05-03
Spin-transfer Torque Memory Self-reference Read Method App 20110085373 - Zheng; Yuankai ; et al.	2011-04-14
Magnetic Stack Having Assist Layer App 20110058412 - Zheng; Yuankai ; et al.	2011-03-10
Magnetic Tunnel Junction With Electronically Reflective Insulative Spacer App 20110049658 - Zheng; Yuankai ; et al.	2011-03-03
Magnetic Tunnel Junction With Compensation Element App 20110019465 - Zheng; Yuankai ; et al.	2011-01-27
Stram with self-reference read scheme Grant 7,876,604 - Zheng , et al. January 25, 2	2011-01-25
Static Magnetic Field Assisted Resistive Sense Element App 20110007430 - Zheng; Yuankai ; et al.	2011-01-13
Magnetic Stack Having Reference Layers With Orthogonal Magnetization Orientation Directions App 20110006385 - Zheng; Yuankai ; et al.	2011-01-13
STRAM with compensation element Grant 7,826,256 - Zheng , et al. November 2, 2	2010-11-02
Variable write and read methods for resistive random access memory Grant 7,826,255 - Xi , et al. November 2, 2	2010-11-02
Magnetic Stack Having Assist Layer App 20100271870 - Zheng; Yuankai ; et al.	2010-10-28
Resistive Sense Memory with Complementary Programmable Recording Layers App 20100254174 - Zheng; Yuankai ; et al.	2010-10-07
Variable Write And Read Methods For Resistive Random Access Memory App 20100238712 - Xi; Haiwen ; et al.	2010-09-23
Thermally Assisted Multi-bit Mram App 20100220518 - Zheng; Yuankai ; et al.	2010-09-02
Non-Volatile Memory Cell with Precessional Switching App 20100195380 - Wang; Xiaobin ; et al.	2010-08-05
Thermally assisted multi-bit MRAM Grant 7,746,687 - Zheng , et al. June 29, 2	2010-06-29
Non Volatile Memory Including Stabilizing Structures App 20100128520 - Zheng; Yuankai ; et al.	2010-05-27
Stram With Composite Free Magnetic Element App 20100109108 - Zheng; Yuankai ; et al.	2010-05-06
ST-RAM Cells with Perpendicular Anisotropy App 20100109110 - Wang; Dexin ; et al.	2010-05-06
STRAM with Self-Reference Read Scheme App 20100110784 - Zheng; Yuankai ; et al.	2010-05-06
Ferroelectric Memory With Magnetoelectric Element App 20100102369 - Tian; Wei ; et al.	2010-04-29
Magnetic Memory With Phonon Glass Electron Crystal Material App 20100091563 - Zheng; Yuankai ; et al.	2010-04-15
Magnetic Stack With Laminated Layer App 20100090261 - Zheng; Yuankai ; et al.	2010-04-15
Magnetic Stack With Oxide To Reduce Switching Current App 20100090301 - Lou; Xiaohua ; et al.	2010-04-15
Magnetic Stack Having Reduced Switching Current App 20100091564 - Gao; Zheng ; et al.	2010-04-15
Semiconductor Device With Thermally Coupled Phase Change Layers App 20100078620 - Xi; Haiwen ; et al.	2010-04-01
Stram With Compensation Element App 20100078741 - Zheng; Yuankai ; et al.	2010-04-01
Flux-closed Stram With Electronically Reflective Insulative Spacer App 20100078742 - Zheng; Yuankai ; et al.	2010-04-01
Thermally Assisted Multi-bit Mram App 20100080049 - Zheng; Yuankai ; et al.	2010-04-01
Stram With Electronically Reflective Insulative Spacer App 20100078743 - Zheng; Yuankai ; et al.	2010-04-01
Variable Write And Read Methods For Resistive Random Access Memory App 20100067281 - Xi; Haiwen ; et al.	2010-03-18
Magnetic memory device Grant 7,486,548 - Zheng , et al. February 3, 2	2009-02-03
Nano-contacted magnetic memory device Grant 7,408,802 - Zheng , et al. August 5, 2	2008-08-05
Memory Cells And Devices Having Magnetoresistive Tunnel Junction With Guided Magnetic Moment Switching And Method App 20080055792 - Zheng; Yuankai ; et al.	2008-03-06
Magnetic memory device Grant 7,310,265 - Zheng , et al. December 18, 2	2007-12-18
Nano-contacted magnetic memory device App 20070165449 - Zheng; Yuankai ; et al.	2007-07-19
Magnetic memory device App 20070109838 - Zheng; Yuankai ; et al.	2007-05-17
Magnetic memory device App 20060250840 - Zheng; YuanKai ; et al.	2006-11-09
Multi-stage per cell magnetoresistive random access memory App 20050174821 - Zheng, YuanKai ; et al.	2005-08-11
Magnetic tunnel junction magnetic random access memory Grant 6,597,618 - Zheng , et al. July 22, 2	2003-07-22
Magnetic Tunnel Junction Magnetic Random Access Memory App 20030103404 - Zheng, Yuankai ; et al.	2003-06-05

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