Zheleva; Tsvetanka

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zheleva; Tsvetanka.The latest application filed is for "methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches".

Company Profile

0.8.4

Zheleva; Tsvetanka - Rockville MD US
Zheleva; Tsvetanka - Chapel Hill NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Low-defect density gallium nitride semiconductor structures and devices thereof Grant 8,637,901 - Zheleva , et al. January 28, 2	2014-01-28
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches Grant 7,195,993 - Zheleva , et al. March 27, 2	2007-03-27
Second gallium nitride layers that extend into trenches in first gallium nitride layers Grant 6,897,483 - Zheleva , et al. May 24, 2	2005-05-24
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches App 20050009304 - Zheleva, Tsvetanka ; et al.	2005-01-13
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenchers, and gallium nitride semiconductor structures fabricated thereby App 20030194828 - Zheleva, Tsvetanka ; et al.	2003-10-16
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth Grant 6,602,763 - Davis , et al. August 5, 2	2003-08-05
Gallium nitride semiconductor structures including lateral gallium nitride layers Grant 6,570,192 - Davis , et al. May 27, 2	2003-05-27
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby App 20010039102 - Zheleva, Tsvetanka ; et al.	2001-11-08
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby Grant 6,265,289 - Zheleva , et al. July 24, 2	2001-07-24
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth App 20010007242 - Davis, Robert F. ; et al.	2001-07-12
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer Grant 6,051,849 - Davis , et al. April 18, 2	2000-04-18

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