Zhao; Yuji

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zhao; Yuji.The latest application filed is for "gan vertical-channel junction field-effect transistors with regrown p-gan by metal organic chemical vapor deposition (mocvd)".

Company Profile

12.9.21

Zhao; Yuji - Chandler AZ US
Zhao; Yuji - Goleta CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Plasma-based edge terminations for gallium nitride power devices Grant 11,417,529 - Zhao , et al. August 16, 2	2022-08-16
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN p-GaN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) App 20220013671 - Zhao; Yuji ; et al.	2022-01-13
Steep slope transistors with threshold switching devices Grant 11,189,717 - Huang , et al. November 30, 2	2021-11-30
GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE App 20210242281 - Fu; Kai ; et al.	2021-08-05
Plasma-based Edge Terminations For Gallium Nitride Power Devices App 20210202257 - Zhao; Yuji ; et al.	2021-07-01
Low-leakage Regrown Gan P-n Junctions For Gan Power Devices App 20210104603 - Zhao; Yuji ; et al.	2021-04-08
GaN-based threshold switching device and memory diode Grant 10,964,749 - Fu , et al. March 30, 2	2021-03-30
Pn Junctions With Mechanically Exfoliated Gallium Oxide And Gallium Nitride App 20200295214 - Montes; Jossue ; et al.	2020-09-17
Nonpolar Iii-nitrides Solar Cell Device App 20200287069 - Huang; Xuanqi ; et al.	2020-09-10
Steep Slope Transistors With Threshold Switching Devices App 20200227546 - Huang; Xuanqi ; et al.	2020-07-16
High-voltage aluminum nitride (AIN) schottky-barrier diodes Grant 10,700,218 - Zhao , et al.	2020-06-30
GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE App 20200144328 - Fu; Kai ; et al.	2020-05-07
HIGH-VOLTAGE ALUMINUM NITRIDE (AlN) SCHOTTKY-BARRIER DIODES App 20190140110 - Zhao; Yuji ; et al.	2019-05-09
Pec Etching Of (20-2-1) Semipolar Gallium Nitride For External Efficiency Enhancement In Light Emitting Diode Applications App 20140167059 - Hsu; Chung-Ta ; et al.	2014-06-19
Low Droop Light Emitting Diode Structure On Gallium Nitride Semipolar Substrates App 20140151634 - Nakamura; Shuji ; et al.	2014-06-05
Low droop light emitting diode structure on gallium nitride semipolar substrates Grant 8,686,397 - Nakamura , et al. April 1, 2	2014-04-01
Low Droop Light Emitting Diode Structure On Gallium Nitride Semipolar Substrates App 20120313076 - Nakamura; Shuji ; et al.	2012-12-13
High Emission Power And Low Efficiency Droop Semipolar Blue Light Emitting Diodes App 20120313077 - Nakamura; Shuji ; et al.	2012-12-13
High Indium Uptake And High Polarization Ratio For Group-iii Nitride Optoelectronic Devices Fabricated On A Semipolar (20-2-1) Plane Of A Gallium Nitride Substrate App 20120273796 - Zhao; Yuji ; et al.	2012-11-01
High Power, High Efficiency And Low Efficiency Droop Iii-nitride Light-emitting Diodes On Semipolar Substrates App 20120126283 - Zhao; Yuji ; et al.	2012-05-24

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