| Patent | Date |
|---|
Semiconductor structure with multiple transistors having various threshold voltages
Grant 10,217,838 - Zhao , et al. Feb | 2019-02-26 |
Semiconductor Structure With Multiple Transistors Having Various Threshold Voltages and Method of Fabrication Thereto
App 20180261683 - Zhao; Dalong ; et al. | 2018-09-13 |
Semiconductor structure with multiple transistors having various threshold voltages
Grant 10,014,387 - Zhao , et al. July 3, 2 | 2018-07-03 |
Buried channel deeply depleted channel transistor
Grant 9,991,300 - Bakhishev , et al. June 5, 2 | 2018-06-05 |
Buried Channel Deeply Depleted Channel Transistor
App 20170323916 - Bakhishev; Teymur ; et al. | 2017-11-09 |
Semiconductor structure with multiple transistors having various threshold voltages
Grant 9,812,550 - Zhao , et al. November 7, 2 | 2017-11-07 |
Reducing or eliminating pre-amorphization in transistor manufacture
Grant 9,793,172 - Scudder , et al. October 17, 2 | 2017-10-17 |
Buried channel deeply depleted channel transistor
Grant 9,786,703 - Bakhishev , et al. October 10, 2 | 2017-10-10 |
Semiconductor Structure with Multiple Transistors Having Various Threshold Voltages
App 20170141209 - Zhao; Dalong ; et al. | 2017-05-18 |
Reducing or Eliminating Pre-Amorphization in Transistor Manufacture
App 20170040225 - Scudder; Lance ; et al. | 2017-02-09 |
Buried Channel Deeply Depleted Channel Transistor
App 20170025457 - Bakhishev; Teymur ; et al. | 2017-01-26 |
Reducing or eliminating pre-amorphization in transistor manufacture
Grant 9,514,940 - Scudder , et al. December 6, 2 | 2016-12-06 |
Buried channel deeply depleted channel transistor
Grant 9,478,571 - Bakhishev , et al. October 25, 2 | 2016-10-25 |
CMOS Structures and Processes Based on Selective Thinning
App 20160307907 - Thompson; Scott E. ; et al. | 2016-10-20 |
Reducing Or Eliminating Pre-amorphization In Transistor Manufacture
App 20160268133 - Scudder; Lance S. ; et al. | 2016-09-15 |
CMOS structures and processes based on selective thinning
Grant 9,391,076 - Thompson , et al. July 12, 2 | 2016-07-12 |
Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
Grant 9,385,047 - Zhao , et al. July 5, 2 | 2016-07-05 |
Method for fabricating a transistor with reduced junction leakage current
Grant 9,368,624 - Thompson , et al. June 14, 2 | 2016-06-14 |
Semiconductor Structure with Multiple Transistors Having Various Threshold Voltages
App 20160163823 - Zhao; Dalong ; et al. | 2016-06-09 |
Semiconductor structure with multiple transistors having various threshold voltages
Grant 9,299,698 - Zhao , et al. March 29, 2 | 2016-03-29 |
High uniformity screen and epitaxial layers for CMOS devices
Grant 9,196,727 - Thompson , et al. November 24, 2 | 2015-11-24 |
High Uniformity Screen and Epitaxial Layers for CMOS Devices
App 20150333144 - Thompson; Scott E. ; et al. | 2015-11-19 |
Integrated Circuits Having a Plurality of High-K Metal Gate FETs with Various Combinations of Channel Foundation Structure and Gate Stack Structure and Methods of Making Same
App 20150287645 - Zhao; Dalong ; et al. | 2015-10-08 |
Semiconductor devices with dopant migration suppression and method of fabrication thereof
Grant 9,112,057 - Pradhan , et al. August 18, 2 | 2015-08-18 |
Semiconductor structure with reduced junction leakage and method of fabrication thereof
Grant 9,105,711 - Wang , et al. August 11, 2 | 2015-08-11 |
Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
Grant 9,093,550 - Zhao , et al. July 28, 2 | 2015-07-28 |
Deeply depleted MOS transistors having a screening layer and methods thereof
Grant 9,041,126 - Hoffmann , et al. May 26, 2 | 2015-05-26 |
Semiconductor structure with substitutional boron and method for fabrication thereof
Grant 8,999,861 - Scudder , et al. April 7, 2 | 2015-04-07 |
High Uniformity Screen And Epitaxial Layers For Cmos Devices
App 20150061012 - Thompson; Scott E. ; et al. | 2015-03-05 |
Reducing or eliminating pre-amorphization in transistor manufacture
Grant 8,937,005 - Scudder , et al. January 20, 2 | 2015-01-20 |
Transistor having reduced junction leakage and methods of forming thereof
Grant 8,883,600 - Thompson , et al. November 11, 2 | 2014-11-11 |
Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
Grant 8,877,619 - Thompson , et al. November 4, 2 | 2014-11-04 |
Method for substrate preservation during transistor fabrication
Grant 8,778,786 - Scudder , et al. July 15, 2 | 2014-07-15 |
Semiconductor Structure With Reduced Junction Leakage And Method Of Fabrication Thereof
App 20140103406 - Wang; Lingquan ; et al. | 2014-04-17 |
Deeply Depleted Mos Transistors Having A Screening Layer And Methods Thereof
App 20140084385 - Hoffmann; Thomas ; et al. | 2014-03-27 |
Reducing Or Eliminating Pre-amorphization In Transistor Manufacture
App 20140038386 - Scudder; Lance S. ; et al. | 2014-02-06 |
Semiconductor structure with reduced junction leakage and method of fabrication thereof
Grant 8,637,955 - Wang , et al. January 28, 2 | 2014-01-28 |
Semiconductor Structure With Multiple Transistors Having Various Threshold Voltages And Method Of Fabrication Thereof
App 20140001571 - Zhao; Dalong ; et al. | 2014-01-02 |
CMOS structures and processes based on selective thinning
Grant 8,614,128 - Thompson , et al. December 24, 2 | 2013-12-24 |
Reducing or eliminating pre-amorphization in transistor manufacture
Grant 8,569,156 - Scudder , et al. October 29, 2 | 2013-10-29 |
Plasma Enhanced Atomic Layer Deposition Process
App 20110183079 - Jackson; Thomas ; et al. | 2011-07-28 |
| 