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name:-0.049325942993164
name:-0.055917024612427
name:-0.010572910308838
Zhang; Qintao Patent Filings

Zhang; Qintao

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zhang; Qintao.The latest application filed is for "ion implantation to control formation of mosfet trench-bottom oxide".

Company Profile
10.53.50
  • Zhang; Qintao - Mt. Kisco NY
  • Zhang; Qintao - Gloucester MA
  • Zhang; Qintao - Mount Kisco NY
  • Zhang; Qintao - Tustin CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of forming stress memorization layer on backside of semiconductor substrate and semiconductor device thereof
Grant 11,444,153 - Zhang , et al. September 13, 2
2022-09-13
Split-gate MOSFET with gate shield
Grant 11,437,488 - Zhang , et al. September 6, 2
2022-09-06
Ion Implantation To Control Formation Of Mosfet Trench-bottom Oxide
App 20220278221 - Zhang; Qintao ;   et al.
2022-09-01
Ion implantation to reduce nanosheet gate length variation
Grant 11,430,877 - Gu , et al. August 30, 2
2022-08-30
Angled ion implant to reduce MOSFET trench sidewall roughness
Grant 11,424,125 - Zhang , et al. August 23, 2
2022-08-23
Methods For Forming Planar Metal-oxide-semiconductor Field-effect Transistors
App 20220238674 - ZHANG; Qintao ;   et al.
2022-07-28
Inductor with ferromagnetic cores
Grant 11,398,347 - Cheng , et al. July 26, 2
2022-07-26
Angled Ion Implant To Reduce Mosfet Trench Sidewall Roughness
App 20220223416 - Zhang; Qintao ;   et al.
2022-07-14
Methods for forming planar metal-oxide-semiconductor field-effect transistors
Grant 11,387,338 - Zhang , et al. July 12, 2
2022-07-12
Ion Implantation To Form Trench-bottom Oxide Of Mosfet
App 20220199806 - Zhang; Qintao ;   et al.
2022-06-23
Implantation Enabled Precisely Controlled Source And Drain Etch Depth
App 20220199802 - Zhang; Qintao ;   et al.
2022-06-23
Ion Implantation To Form Step-oxide Trench Mosfet
App 20220190141 - Gu; Sipeng ;   et al.
2022-06-16
Method For Beol Metal To Dielectric Adhesion
App 20220189774 - Zhang; Qintao ;   et al.
2022-06-16
Split-gate Mosfet With Gate Shield
App 20220165863 - Zhang; Qintao ;   et al.
2022-05-26
Ion Implantation To Reduce Nanosheet Gate Length Variation
App 20220157968 - Gu; Sipeng ;   et al.
2022-05-19
Localized Stressor Formation By Ion Implantation
App 20220102500 - Gu; Sipeng ;   et al.
2022-03-31
Techniques And Apparatus For Anisotropic Stress Compensation In Substrates Using Ion Implantation
App 20220068648 - Falk; Scott ;   et al.
2022-03-03
Method For Increasing Photoresist Etch Selectivity To Enable High Energy Hot Implant In Sic Devices
App 20220044939 - Zhang; Qintao ;   et al.
2022-02-10
Vertical Field Effect Transistor Including Integrated Antifuse
App 20210408016 - CHENG; Kangguo ;   et al.
2021-12-30
Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation
Grant 11,201,057 - Falk , et al. December 14, 2
2021-12-14
Vertical field effect transistor including integrated antifuse
Grant 11,139,307 - Cheng , et al. October 5, 2
2021-10-05
Techniques for reducing tip to tip shorting and critical dimension variation during nanoscale patterning
Grant 11,114,299 - Zhang , et al. September 7, 2
2021-09-07
Manufacturing method for inductor with ferromagnetic cores
Grant 11,037,725 - Cheng , et al. June 15, 2
2021-06-15
Replacement metal gate formation of PMOS ultra-low voltage devices using a thermal implant
Grant 10,930,508 - Zhang , et al. February 23, 2
2021-02-23
Semiconductor Substrate Including Stress Memorization Layer
App 20210050411 - Zhang; Qintao ;   et al.
2021-02-18
Techniques For Reducing Tip To Tip Shorting And Critical Dimension Variation During Nanoscale Patterning
App 20210005445 - Zhang; Qintao ;   et al.
2021-01-07
Replacement Metal Gate Formation Of Pmos Ultra-low Voltage Devices Using A Thermal Implant
App 20200273707 - Zhang; Qintao ;   et al.
2020-08-27
Vertical Field Effect Transistor Including Integrated Antifuse
App 20200235109 - Cheng; Kangguo ;   et al.
2020-07-23
Vertical field effect transistor including integrated antifuse
Grant 10,680,000 - Cheng , et al.
2020-06-09
Vertical field effect transistor including integrated antifuse
Grant 10,679,998 - Cheng , et al.
2020-06-09
Techniques And Apparatus For Anisotropic Stress Compensation In Substrates Using Ion Implantation
App 20200118822 - Falk; Scott ;   et al.
2020-04-16
Programmable device compatible with vertical transistor flow
Grant 10,615,166 - Cheng , et al.
2020-04-07
Integrated LDMOS and VFET transistors
Grant 10,615,159 - Cheng , et al.
2020-04-07
Method of manufacturing inductor with ferromagnetic cores
Grant 10,553,354 - Cheng , et al. Fe
2020-02-04
Uniform gate dielectric for DRAM device
Grant 10,522,549 - Guo , et al. Dec
2019-12-31
High density nanosheet diodes
Grant 10,504,890 - Cheng , et al. Dec
2019-12-10
Nanosheet transistors having different gate dielectric thicknesses on the same chip
Grant 10,396,169 - Cheng , et al. A
2019-08-27
Uniform Gate Dielectric For Dram Device
App 20190259764 - Guo; Baonian ;   et al.
2019-08-22
Programmable Device Compatible With Vertical Transistor Flow
App 20190189625 - Cheng; Kangguo ;   et al.
2019-06-20
Vertical Field Effect Transistor Including Integrated Antifuse
App 20190123056 - Cheng; Kangguo ;   et al.
2019-04-25
Forming horizontal bipolar junction transistor compatible with nanosheets
Grant 10,269,790 - Cheng , et al.
2019-04-23
Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuning
Grant 10,256,150 - Guo , et al.
2019-04-09
Stacked nanosheet field effect transistor device with substrate isolation
Grant 10,249,709 - Cheng , et al.
2019-04-02
Nanosheet transistors having different gate dielectric thicknesses on the same chip
Grant 10,249,539 - Cheng , et al.
2019-04-02
Integrating standard-gate and extended-gate nanosheet transistors on the same substrate
Grant 10,243,054 - Cheng , et al.
2019-03-26
Multiple finFET formation with epitaxy separation
Grant 10,236,382 - Cheng , et al.
2019-03-19
IFinFET
Grant 10,236,381 - Cheng , et al.
2019-03-19
Vertical field effect transistor including integrated antifuse
Grant 10,229,919 - Cheng , et al.
2019-03-12
One-time programmable vertical field-effect transistor
Grant 10,229,920 - Cheng , et al.
2019-03-12
Forming gates with varying length using sidewall image transfer
Grant 10,224,329 - Cheng , et al.
2019-03-05
Inductor With Ferromagnetic Cores
App 20190019617 - Cheng; Kangguo ;   et al.
2019-01-17
Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning
Grant 10,170,368 - Guo , et al. J
2019-01-01
Inductor With Ferromagnetic Cores
App 20180374629 - Cheng; Kangguo ;   et al.
2018-12-27
Nanosheet capacitor
Grant 10,157,935 - Cheng , et al. Dec
2018-12-18
Integrating thin and thick gate dielectric nanosheet transistors on same chip
Grant 10,141,403 - Cheng , et al. Nov
2018-11-27
Fabricating Fin-based Split-gate High-drain-voltage Transistor By Work Function Tuning
App 20180286760 - Guo; Dechao ;   et al.
2018-10-04
Fabricating Fin-based Split-gate High-drain-voltage Transistor By Work Function Tuning
App 20180286761 - Guo; Dechao ;   et al.
2018-10-04
Integrated device with P-I-N diodes and vertical field effect transistors
Grant 10,090,293 - Cheng , et al. October 2, 2
2018-10-02
Forming Horizontal Bipolar Junction Transistor Compatible With Nanosheets
App 20180261593 - Cheng; Kangguo ;   et al.
2018-09-13
Inductor With Ferromagnetic Cores
App 20180261376 - Cheng; Kangguo ;   et al.
2018-09-13
Stacked Nanosheet Field Effect Transistor Device With Substrate Isolation
App 20180219064 - Cheng; Kangguo ;   et al.
2018-08-02
Vertical transistor having uniform bottom spacers
Grant 10,032,909 - Cheng , et al. July 24, 2
2018-07-24
Nanosheet Transistors Having Different Gate Dielectric Thicknesses On The Same Chip
App 20180197785 - Cheng; Kangguo ;   et al.
2018-07-12
Nanosheet Transistors Having Different Gate Dielectric Thicknesses On The Same Chip
App 20180197784 - Cheng; Kangguo ;   et al.
2018-07-12
Forming horizontal bipolar junction transistor compatible with nanosheets
Grant 9,991,254 - Cheng , et al. June 5, 2
2018-06-05
Forming Gates With Varying Length Using Sidewall Image Transfer
App 20180138175 - Cheng; Kangguo ;   et al.
2018-05-17
High Density Nanosheet Diodes
App 20180102359 - Cheng; Kangguo ;   et al.
2018-04-12
Multiple Finfet Formation With Epitaxy Separation
App 20180096881 - Cheng; Kangguo ;   et al.
2018-04-05
Nanosheet transistors having different gate dielectric thicknesses on the same chip
Grant 9,935,014 - Cheng , et al. April 3, 2
2018-04-03
Ifinfet
App 20180090605 - CHENG; KANGGUO ;   et al.
2018-03-29
Integrated Ldmos And Vfet Transistors
App 20180090488 - Cheng; Kangguo ;   et al.
2018-03-29
Nanosheet Capacitor
App 20180083046 - Cheng; Kangguo ;   et al.
2018-03-22
Vertical antifuse structures
Grant 9,917,090 - Cheng , et al. March 13, 2
2018-03-13
Vertical Field Effect Transistor Including Integrated Antifuse
App 20180061844 - Cheng; Kangguo ;   et al.
2018-03-01
Vertical Field Effect Transistor Including Integrated Antifuse
App 20180061845 - Cheng; Kangguo ;   et al.
2018-03-01
Vertical Antifuse Structures
App 20180053767 - Cheng; Kangguo ;   et al.
2018-02-22
Integrated Device With P-i-n Diodes And Vertical Field Effect Transistors
App 20180053758 - CHENG; KANGGUO ;   et al.
2018-02-22
Forming gates with varying length using sidewall image transfer
Grant 9,899,383 - Cheng , et al. February 20, 2
2018-02-20
Stacked nanosheet field effect transistor device with substrate isolation
Grant 9,881,998 - Cheng , et al. January 30, 2
2018-01-30
Vertical Transistor Having Uniform Bottom Spacers
App 20170365713 - CHENG; KANGGUO ;   et al.
2017-12-21
Multiple finFET formation with epitaxy separation
Grant 9,847,246 - Cheng , et al. December 19, 2
2017-12-19
High density nanosheet diodes
Grant 9,842,835 - Cheng , et al. December 12, 2
2017-12-12
Forming Gates With Varying Length Using Sidewall Image Transfer
App 20170309622 - Cheng; Kangguo ;   et al.
2017-10-26
Forming Gates With Varying Length Using Sidewall Image Transfer
App 20170309626 - Cheng; Kangguo ;   et al.
2017-10-26
Integrated device with P-I-N diodes and vertical field effect transistors
Grant 9,799,647 - Cheng , et al. October 24, 2
2017-10-24
Forming gates with varying length using sidewall image transfer
Grant 9,793,270 - Cheng , et al. October 17, 2
2017-10-17
Integrated LDMOS and VFET transistors
Grant 9,768,166 - Cheng , et al. September 19, 2
2017-09-19
iFinFET
Grant 9,728,621 - Cheng , et al. August 8, 2
2017-08-08
One time programmable memory with a twin gate structure
Grant 9,659,944 - Zhang , et al. May 23, 2
2017-05-23
Nanosheet capacitor
Grant 9,653,480 - Cheng , et al. May 16, 2
2017-05-16
Method of making a programmable cell and structure thereof
Grant 9,634,014 - Zhang , et al. April 25, 2
2017-04-25
Vertical transistor having uniform bottom spacers
Grant 9,627,511 - Cheng , et al. April 18, 2
2017-04-18
Semiconductor Device with Split Work Functions
App 20170005093 - ZHANG; Qintao ;   et al.
2017-01-05
One Time Programmable Memory with a Twin Gate Structure
App 20170005103 - ZHANG; Qintao ;   et al.
2017-01-05
Devices having multiple threshold voltages and method of fabricating such devices
Grant 9,536,880 - Zhang , et al. January 3, 2
2017-01-03
Super junction LDMOS finFET devices
Grant 9,472,615 - Zhang , et al. October 18, 2
2016-10-18
Devices Having Multiple Threshold Voltages And Method Of Fabricating Such Devices
App 20160300838 - Zhang; Qintao ;   et al.
2016-10-13
Method Of Making A Programmable Cell And Structure Thereof
App 20160276355 - Zhang; Qintao ;   et al.
2016-09-22
Extended-drain Transistor Using Inner Spacer
App 20160190281 - Zhang; Qintao ;   et al.
2016-06-30
Extended-drain transistor using inner spacer
Grant 9,379,212 - Zhang , et al. June 28, 2
2016-06-28
Super Junction Ldmos Finfet Devices
App 20160181358 - ZHANG; Qintao ;   et al.
2016-06-23
FinFET formation with late fin reveal
Grant 9,171,935 - Kim , et al. October 27, 2
2015-10-27
FinFET FORMATION WITH LATE FIN REVEAL
App 20150255569 - Kim; Seong-Dong ;   et al.
2015-09-10

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