loadpatents
name:-0.01025390625
name:-0.010665893554688
name:-0.0050151348114014
Zhang; Henry Patent Filings

Zhang; Henry

Patent Applications and Registrations

Patent applications and USPTO patent grants for Zhang; Henry.The latest application filed is for "leakage reduction circuit for read-only memory (rom) structures".

Company Profile
3.8.5
  • Zhang; Henry - Saratoga CA
  • Zhang; Henry - Shenzhen CN
  • Zhang; Henry - Ann Arbor MI
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Leakage reduction circuit for read-only memory (ROM) structures
Grant 11,355,201 - Shimomura , et al. June 7, 2
2022-06-07
Leakage Reduction Circuit For Read-only Memory (rom) Structures
App 20210398594 - Shimomura; Shigeki ;   et al.
2021-12-23
Baby monitor
Grant D936,029 - Zhang November 16, 2
2021-11-16
Mixer assembly for exhaust aftertreatment system
Grant 10,941,692 - Zhang , et al. March 9, 2
2021-03-09
Multicore on-die memory microcontroller
Grant 10,635,526 - Yin , et al.
2020-04-28
Storage operation queue
Grant 10,552,045 - Ouyang , et al. Fe
2020-02-04
Data path control for non-volatile memory
Grant 10,254,967 - Ouyang , et al.
2019-04-09
Multicore On-die Memory Microcontroller
App 20180357123 - Yin; Yibo ;   et al.
2018-12-13
Storage Operation Queue
App 20180136840 - Ouyang; Jingwen ;   et al.
2018-05-17
Data Path Control For Non-volatile Memory
App 20170199668 - Ouyang; Jingwen ;   et al.
2017-07-13
Program cycle skip evaluation before write operations in non-volatile memory
Grant 8,947,944 - Balakrishnan , et al. February 3, 2
2015-02-03
Program Cycle Skip Evaluation Before Write Operations In Non-Volatile Memory
App 20140269106 - Balakrishnan; Gopinath ;   et al.
2014-09-18

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