ZHANG; Baoshun

Patent Applications and Registrations

Patent applications and USPTO patent grants for ZHANG; Baoshun.The latest application filed is for "vertical umosfet device with high channel mobility and preparation method thereof".

Company Profile

2.3.9

ZHANG; Baoshun - Suzhou Jiangsu Province
Zhang; Baoshun - Nanjing Jiangsu
Zhang; Baoshun - Jiangsu CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Vertical Umosfet Device With High Channel Mobility And Preparation Method Thereof App 20210384345 - CHEN; Fu ; et al.	2021-12-09
Gallium Oxide Film Based On Sapphire Substrate As Well As Growth Method And Application Thereof App 20210327703 - ZHANG; Xiaodong ; et al.	2021-10-21
Ballistic transport semiconductor device based on nano array and manufacturing method Grant 11,145,753 - Yu , et al. October 12, 2	2021-10-12
Film Bulk Acoustic Resonator And Fabricating Method Thereof App 20210265967 - ZHANG; Xiaodong ; et al.	2021-08-26
Compensator, Control Method and Device Therefor App 20210226449 - Dong; Yunlong ; et al.	2021-07-22
Method and apparatus for suppressing impact of compensator on line distance protection Grant 10,965,114 - Pan , et al. March 30, 2	2021-03-30
Radio-frequency/microwave Energy Harvesting Device Based On Spintronics App 20200251934 - Kind Code	2020-08-06
Ballistic Transport Semiconductor Device Based On Nano Array And Manufacturing Method App 20200227541 - YU; Guohao ; et al.	2020-07-16
Method And Apparatus For Suppressing Impact Of Compensator On Line Distance Protection App 20200185901 - PAN; Lei ; et al.	2020-06-11
Terahertz Source Chip, Source Device And Source Assembly, And Manufacturing Methods Thereof App 20160233379 - Qin; Hua ; et al.	2016-08-11
Group III nitride high electron mobility transistor (HEMT) device Grant 9,070,756 - Cai , et al. June 30, 2	2015-06-30
Group III Nitride High Electron Mobility Transistor (HEMT) Device App 20140319584 - Cai; Yong ; et al.	2014-10-30

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