loadpatents
Patent applications and USPTO patent grants for Zdansky; Lennart.The latest application filed is for "bipolar transistor having a low doped drift layer of crystalline sic".
Patent | Date |
---|---|
Bipolar transistor having a low doped drift layer of crystalline SiC Grant 6,313,488 - Bakowski , et al. November 6, 2 | 2001-11-06 |
Schottky diode of SiC and a method for production thereof Grant 6,104,043 - Hermansson , et al. August 15, 2 | 2000-08-15 |
Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage Grant 6,091,108 - Harris , et al. July 18, 2 | 2000-07-18 |
High voltage converter circuit Grant 5,920,472 - Bijlenga , et al. July 6, 1 | 1999-07-06 |
Method for producing a channel region layer in a voltage controlled semiconductor device Grant 5,786,251 - Harris , et al. July 28, 1 | 1998-07-28 |
Converter circuit, circuitry having at least one switching device and circuit module Grant 5,661,644 - Bergman , et al. August 26, 1 | 1997-08-26 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.