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Patent applications and USPTO patent grants for Zawadzki; Keith.The latest application filed is for "raised facet- and non-facet 3d source/drain contacts in mosfets".
Patent | Date |
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Ultra-abrupt semiconductor junction profile Grant 8,394,687 - Ranade , et al. March 12, 2 | 2013-03-12 |
Methods of forming improved EPI fill on narrow isolation bounded source/drain regions and structures formed thereby Grant 7,691,752 - Ranade , et al. April 6, 2 | 2010-04-06 |
Raised Facet- And Non-facet 3d Source/drain Contacts In Mosfets App 20090315120 - Shifren; Lucian ;   et al. | 2009-12-24 |
Methods Of Forming Improved Epi Fill On Narrow Isolation Bounded Source/drain Regions And Structures Formed Thereby App 20080237741 - Ranade; Pushkar ;   et al. | 2008-10-02 |
Methods Of Forming Improved Epi Fill On Narrow Isolation Bounded Source/drain Regions And Structures Formed Thereby App 20080237742 - Ranade; Pushkar ;   et al. | 2008-10-02 |
Ultra-abrupt Semiconductor Junction Profile App 20080237661 - Ranade; Pushkar ;   et al. | 2008-10-02 |
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