loadpatents
Patent applications and USPTO patent grants for Yutechnix, Inc..The latest application filed is for "deep trench surrounded mosfet with planar mos gate".
Patent | Date |
---|---|
Deep trench surrounded MOSFET with planar MOS gate Grant 11,456,389 - Dun , et al. September 27, 2 | 2022-09-27 |
Double trench MOSFET with trench gate Grant 11,322,625 - Dun , et al. May 3, 2 | 2022-05-03 |
Double Trench MOSFET With Trench Gate App 20200373439 - Dun; Haiping ;   et al. | 2020-11-26 |
Deep Trench Surrounded MOSFET with Planar MOS Gate App 20200373438 - Dun; Haiping ;   et al. | 2020-11-26 |
Deep trench MOS barrier junction all around rectifier and MOSFET Grant 10,770,599 - Dun , et al. Sep | 2020-09-08 |
High speed Schottky rectifier Grant 10,304,971 - Yu , et al. | 2019-05-28 |
Deep Trench MOS Barrier Junction All Around Rectifier and MOSFET App 20180138322 - Dun; Haiping ;   et al. | 2018-05-17 |
High Speed Schottky Rectifier App 20180019348 - Yu; Ho-Yuan ;   et al. | 2018-01-18 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.