Yun; Chong-man

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yun; Chong-man.The latest application filed is for "superjunction semiconductor device".

Company Profile

0.10.14

Yun; Chong-man - Seoul N/A KR
Yun; Chong-man - Yongsan-gu KR
Yun; Chong-man - Kyungki-do KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of fabricating high-voltage semiconductor device Grant 8,716,085 - Lee , et al. May 6, 2	2014-05-06
MOS gate power semiconductor device with anode of protection diode connected to collector electrode Grant 8,269,304 - Oh , et al. September 18, 2	2012-09-18
Superjunction Semiconductor Device App 20120161274 - Lee; Jae-gil ; et al.	2012-06-28
Superjunction semiconductor device Grant 8,084,815 - Lee , et al. December 27, 2	2011-12-27
Charge Balance Power Device And Manufacturing Method Thereof App 20110169080 - YUN; Chong-Man ; et al.	2011-07-14
Method of Fabricating High-Voltage Semiconductor Device App 20110097864 - Lee; Jae-gil ; et al.	2011-04-28
Mos Gate Power Semiconductor Device App 20110062490 - OH; Kwang-Hoon ; et al.	2011-03-17
Mos Gate Power Semiconductor Device App 20110049563 - Oh; Kwang-Hoon ; et al.	2011-03-03
High-voltage semiconductor device and method of fabricating the same Grant 7,868,384 - Lee , et al. January 11, 2	2011-01-11
Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same Grant 7,645,659 - Yun , et al. January 12, 2	2010-01-12
High-Voltage Semiconductor Device and Method of Fabricating the Same App 20080111207 - Lee; Jae-gil ; et al.	2008-05-15
Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same Grant 7,276,405 - Choi , et al. October 2, 2	2007-10-02
Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same App 20070120215 - Yun; Chong-man ; et al.	2007-05-31
High-voltage Semiconductor Device App 20070029597 - Lee; Jae-gil ; et al.	2007-02-08
Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same App 20050263818 - Choi, Young-chul ; et al.	2005-12-01
Power semiconductor device having high breakdown voltage, low on-resistance, and small switching loss and method of forming the same Grant 6,930,356 - Choi , et al. August 16, 2	2005-08-16
MOS-gated transistor with improved UIS capability App 20040256659 - Kim, Soo-seong ; et al.	2004-12-23
Power semiconductor device having high breakdown voltage, low on-resistance, and small switching loss and method of forming the same App 20040041229 - Chol, Young-chul ; et al.	2004-03-04
Power MOSFET having low on-resistance and high ruggedness Grant 6,664,595 - Yun , et al. December 16, 2	2003-12-16
Mos-gated power semiconductor device App 20030057478 - Yun, Chong-man ; et al.	2003-03-27
Trench-gate power semiconductor device preventing latch-up and method for fabricating the same App 20020005548 - Kim, Hyun-chul ; et al.	2002-01-17
Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode, and method for fabricating the same App 20010026984 - Yun, Chong Man ; et al.	2001-10-04
Methods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniques Grant 5,891,776 - Han , et al. April 6, 1	1999-04-06

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