loadpatents
name:-0.0089759826660156
name:-0.0063009262084961
name:-0.00038886070251465
YU; Sheng-Fu Patent Filings

YU; Sheng-Fu

Patent Applications and Registrations

Patent applications and USPTO patent grants for YU; Sheng-Fu.The latest application filed is for "semiconductor device and method".

Company Profile
0.5.7
  • YU; Sheng-Fu - Chiayi City TW
  • Yu; Sheng-Fu - Chiayi TW
  • YU; SHENG-FU - HSINCHU TW
  • Yu; Sheng-Fu - Tao-Yuan TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor Device And Method
App 20220223590 - WU; Hsi-Jung ;   et al.
2022-07-14
Modified channel position to suppress hot carrier injection in FinFETs
Grant 9,570,561 - Hsiao , et al. February 14, 2
2017-02-14
Control Method Of Rf Switch Module
App 20160336993 - LIN; HENG-CHIH ;   et al.
2016-11-17
Fin sidewall removal to enlarge epitaxial source/drain volume
Grant 9,490,254 - Hsiao , et al. November 8, 2
2016-11-08
Fin Sidewall Removal To Enlarge Epitaxial Source/drain Volume
App 20160035726 - Hsiao; Ru-Shang ;   et al.
2016-02-04
Air-gap offset spacer in FinFET structure
Grant 9,252,233 - Hsiao , et al. February 2, 2
2016-02-02
Fin sidewall removal to enlarge epitaxial source/drain volume
Grant 9,159,812 - Hsiao , et al. October 13, 2
2015-10-13
Fin Sidewall Removal To Enlarge Epitaxial Source/drain Volume
App 20150279975 - Hsiao; Ru-Shang ;   et al.
2015-10-01
Air-gap Offset Spacer In Finfet Structure
App 20150263122 - Hsiao; Ru-Shang ;   et al.
2015-09-17
Modified Channel Position To Suppress Hot Carrier Injection In Finfets
App 20150228731 - Hsiao; Ru-Shang ;   et al.
2015-08-13
Fabrication method of gallium nitride-based compound semiconductor
App 20110003420 - Chen; Miin-Jang ;   et al.
2011-01-06
Apparatus for power circuit of light emitting diode
Grant 7,408,304 - Lin , et al. August 5, 2
2008-08-05

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