| Patent | Date |
|---|
Epitaxial growth methods and structures thereof
Grant 11,456,360 - Ueno , et al. September 27, 2 | 2022-09-27 |
FINFET Device Having Flat-Top Epitaxial Features and Method of Making the Same
App 20220293601 - Lee; Yi-Jing ; et al. | 2022-09-15 |
Method For Manufacturing Semiconductor Structure With Reduced Nodule Defects
App 20220293415 - LIN; Che-Yu ; et al. | 2022-09-15 |
Source/drain formation with reduced selective loss defects
Grant 11,444,181 - Chang , et al. September 13, 2 | 2022-09-13 |
Semiconductor Device And Methods Of Forming
App 20220246611 - Tang; Han-Yu ; et al. | 2022-08-04 |
Semiconductor Device Having Epitaxy Source/drain Regions
App 20220181320 - LEE; Yi-Jing ; et al. | 2022-06-09 |
Transistors with Stacked Semiconductor Layers as Channels
App 20220181440 - Yang; Tsung-Hsi ; et al. | 2022-06-09 |
Static random access memory cell and manufacturing method thereof
Grant 11,355,500 - Lee , et al. June 7, 2 | 2022-06-07 |
Semiconductor Device and Methods of Forming
App 20220131006 - Chang; Hung-Tai ; et al. | 2022-04-28 |
Semiconductor device and method
Grant 11,315,837 - Lee , et al. April 26, 2 | 2022-04-26 |
FinFET device having flat-top epitaxial features and method of making the same
Grant 11,276,693 - Lee , et al. March 15, 2 | 2022-03-15 |
Manufacturing method of integrated circuit
Grant 11,276,692 - Lee , et al. March 15, 2 | 2022-03-15 |
Method of making semiconductor device having first and second epitaxial materials
Grant 11,257,951 - Su , et al. February 22, 2 | 2022-02-22 |
Transistors with stacked semiconductor layers as channels
Grant 11,257,908 - Yang , et al. February 22, 2 | 2022-02-22 |
Epitaxy Regions with Large Landing Areas for Contact Plugs
App 20220028856 - Tai; Jung-Chi ; et al. | 2022-01-27 |
Source/Drain Formation with Reduced Selective Loss Defects
App 20220029001 - Chang; Chih-Chiang ; et al. | 2022-01-27 |
FinFETs having epitaxial capping layer on fin and methods for forming the same
Grant 11,211,477 - Yu , et al. December 28, 2 | 2021-12-28 |
Method Of Fabricating A Source/drain Recess In A Semiconductor Device
App 20210391465 - PENG; Eric ; et al. | 2021-12-16 |
Semiconductor Devices And Methods Of Manufacture
App 20210376129 - Yang; Wei-Siang ; et al. | 2021-12-02 |
Confined Source/drain Epitaxy Regions And Method Forming Same
App 20210376073 - Yu; Jeng-Wei ; et al. | 2021-12-02 |
Method Of Forming Shaped Source/drain Epitaxial Layers Of A Semiconductor Device
App 20210328047 - Lee; Yi-Jing ; et al. | 2021-10-21 |
Semiconductor Device Having Merged Epitaxial Features with Arc-Like Bottom Surface and Method of Making the Same
App 20210313230 - Lee; Yi-Jing ; et al. | 2021-10-07 |
Source/drain recess in a semiconductor device
Grant 11,107,921 - Peng , et al. August 31, 2 | 2021-08-31 |
Confined source/drain epitaxy regions and method forming same
Grant 11,101,347 - Yu , et al. August 24, 2 | 2021-08-24 |
Method of forming shaped source/drain epitaxial layers of a semiconductor device
Grant 11,056,578 - Lee , et al. July 6, 2 | 2021-07-06 |
Fin field-effect transistors and methods of forming the same
Grant 11,049,954 - Lee , et al. June 29, 2 | 2021-06-29 |
Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same
Grant 11,037,826 - Lee , et al. June 15, 2 | 2021-06-15 |
Structure and method for semiconductor device
Grant 11,031,398 - Lee , et al. June 8, 2 | 2021-06-08 |
Method Of Making Semiconductor Device Having First And Second Epitaxial Materials
App 20210083115 - SU; Lilly ; et al. | 2021-03-18 |
Semiconductor Device And Manufacturing Method Thereof
App 20210074710 - LEE; Yi-Jing ; et al. | 2021-03-11 |
Increasing Source/Drain Dopant Concentration to Reduced Resistance
App 20210057552 - Lee; Yi-Jing ; et al. | 2021-02-25 |
Method For Manufacturing Semiconductor Device
App 20210050451 - LIN; Che-Yu ; et al. | 2021-02-18 |
Semiconductor Device And Manufacturing Method Thereof
App 20210036154 - LI; Kun-Mu ; et al. | 2021-02-04 |
Semiconductor device and method of forming same
Grant 10,879,128 - Kwok , et al. December 29, 2 | 2020-12-29 |
Semiconductor Device and Method
App 20200402862 - Lee; Yi-Jing ; et al. | 2020-12-24 |
FinFET with rounded source/drain profile
Grant 10,861,975 - Yu , et al. December 8, 2 | 2020-12-08 |
Semiconductor device having first and second epitaxial materials
Grant 10,854,748 - SU , et al. December 1, 2 | 2020-12-01 |
Increasing source/drain dopant concentration to reduced resistance
Grant 10,847,638 - Lee , et al. November 24, 2 | 2020-11-24 |
Increasing source/drain dopant concentration to reduced resistance
Grant 10,840,355 - Lee , et al. November 17, 2 | 2020-11-17 |
Static Random Access Memory Cell And Manufacturing Method Thereof
App 20200343250 - LEE; Yi-Jing ; et al. | 2020-10-29 |
Semiconductor device having fins
Grant 10,811,537 - Lin , et al. October 20, 2 | 2020-10-20 |
FinFETs having epitaxial capping layer on fin and methods for forming the same
Grant 10,797,164 - Yu , et al. October 6, 2 | 2020-10-06 |
Source/drain recess in a semiconductor device
Grant 10,784,375 - Peng , et al. Sept | 2020-09-22 |
Semiconductor device and method
Grant 10,770,359 - Lee , et al. Sep | 2020-09-08 |
Epitaxial Growth Methods And Structures Thereof
App 20200279920 - UENO; Tetsuji ; et al. | 2020-09-03 |
Semiconductor device and manufacturing method thereof
Grant 10,749,029 - Li , et al. A | 2020-08-18 |
Structure and method for semiconductor device
Grant 10,727,229 - Lee , et al. | 2020-07-28 |
Semiconductor device and manufacturing method of a semiconductor device
Grant 10,714,487 - Lee , et al. | 2020-07-14 |
Confined Source/Drain Epitaxy Regions and Method Forming Same
App 20200176560 - Yu; Jeng-Wei ; et al. | 2020-06-04 |
Semiconductor Device Having Merged Epitaxial Features with Arc-Like Bottom Surface and Method of Making the Same
App 20200161185 - Lee; Yi-Jing ; et al. | 2020-05-21 |
Epitaxial growth methods and structures thereof
Grant 10,658,468 - Ueno , et al. | 2020-05-19 |
Transistors with Stacked Semiconductor Layers as Channels
App 20200135861 - Yang; Tsung-Hsi ; et al. | 2020-04-30 |
Method Of Forming Shaped Source/drain Epitaxial Layers Of A Semiconductor Device
App 20200135903 - LEE; Yi-Jing ; et al. | 2020-04-30 |
Manufacturing Method Of Integrated Circuit
App 20200119006 - LEE; Yi-Jing ; et al. | 2020-04-16 |
Fin Field-effect Transistors And Methods Of Forming The Same
App 20200119165 - Lee; Yi-Jing ; et al. | 2020-04-16 |
Source/drain Recess In A Semiconductor Device
App 20200098919 - PENG; Eric ; et al. | 2020-03-26 |
Semiconductor Device and Method of Forming Same
App 20200075423 - Kwok; Tsz-Mei ; et al. | 2020-03-05 |
Structure and Method for Semiconductor Device
App 20200075597 - Lee; Yi-Jing ; et al. | 2020-03-05 |
Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same
Grant 10,546,784 - Lee , et al. Ja | 2020-01-28 |
FinFETs having Epitaxial Capping Layer on Fin and Methods for Forming the Same
App 20200027970 - Yu; Ming-Hua ; et al. | 2020-01-23 |
Semiconductor Device And Method
App 20200020597 - Lee; Yi-Jing ; et al. | 2020-01-16 |
Increasing Source/Drain Dopant Concentration to Reduced Resistance
App 20200006532 - Lee; Yi-Jing ; et al. | 2020-01-02 |
Semiconductor device and method
Grant 10,515,858 - Lee , et al. Dec | 2019-12-24 |
Method of forming shaped source/drain epitaxial layers of a semiconductor device
Grant 10,516,037 - Lee , et al. Dec | 2019-12-24 |
Integrated circuit and manufacturing method thereof
Grant 10,510,753 - Lee , et al. Dec | 2019-12-17 |
Fin Field-Effect Transistors and methods of forming the same
Grant 10,510,868 - Lee , et al. Dec | 2019-12-17 |
FinFET with Rounded Source/Drain Profile
App 20190371934 - Yu; Ming-Hua ; et al. | 2019-12-05 |
Semiconductor Device and Method
App 20190371677 - Lee; Yi-Jing ; et al. | 2019-12-05 |
FinFET device having flat-top epitaxial features and method of making the same
Grant 10,490,552 - Lee , et al. Nov | 2019-11-26 |
Fin Field-effect Transistors And Methods Of Forming The Same
App 20190341471 - Lee; Yi-Jing ; et al. | 2019-11-07 |
Increasing Source/Drain Dopant Concentration to Reduced Resistance
App 20190341472 - Lee; Yi-Jing ; et al. | 2019-11-07 |
Epitaxial growth methods and structures thereof
Grant 10,453,925 - Ueno , et al. Oc | 2019-10-22 |
FinFET with rounded source/drain profile
Grant 10,388,792 - Yu , et al. A | 2019-08-20 |
Fin field-effect transistors and methods of forming the same
Grant 10,355,105 - Lee , et al. July 16, 2 | 2019-07-16 |
Semiconductor Device And Manufacturing Method Of A Semiconductor Device
App 20190131310 - LEE; Yi-Jing ; et al. | 2019-05-02 |
Fin Field-effect Transistors And Methods Of Forming The Same
App 20190131434 - Lee; Yi-Jing ; et al. | 2019-05-02 |
Semiconductor Device And Manufacturing Method Thereof
App 20190123201 - LI; Kun-Mu ; et al. | 2019-04-25 |
Semiconductor strips with undercuts and methods for forming the same
Grant 10,269,937 - Huang , et al. | 2019-04-23 |
Semiconductor device and method
Grant 10,269,655 - Lee , et al. | 2019-04-23 |
Epitaxial Growth Methods And Structures Thereof
App 20190109194 - Ueno; Tetsuji ; et al. | 2019-04-11 |
Method Of Forming Shaped Source/drain Epitaxial Layers Of A Semiconductor Device
App 20190006491 - LEE; Yi-Jing ; et al. | 2019-01-03 |
Semiconductor device, static random access memory cell and manufacturing method of semiconductor device
Grant 10,170,483 - Lee , et al. J | 2019-01-01 |
Semiconductor device and manufacturing method thereof
Grant 10,164,096 - Li , et al. Dec | 2018-12-25 |
Metrology system and measurement method using the same
Grant 10,163,669 - Hung , et al. Dec | 2018-12-25 |
Semiconductor Device Having Merged Epitaxial Features with Arc-Like Bottom Surface and Method of Making the Same
App 20180350687 - Lee; Yi-Jing ; et al. | 2018-12-06 |
Semiconductor Device Having Fins
App 20180342621 - LIN; Che-Yu ; et al. | 2018-11-29 |
FinFET Device Having Flat-Top Epitaxial Features and Method of Making the same
App 20180337182 - Lee; Yi-Jing ; et al. | 2018-11-22 |
Source/drain Recess In A Semiconductor Device
App 20180315855 - PENG; Eric ; et al. | 2018-11-01 |
Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same
Grant 10,049,936 - Lee , et al. August 14, 2 | 2018-08-14 |
Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor device
Grant 10,026,843 - Lin , et al. July 17, 2 | 2018-07-17 |
Bottle-neck recess in a semiconductor device
Grant 10,020,397 - Peng , et al. July 10, 2 | 2018-07-10 |
Dispersion Of (meth)acrylate Copolymer Containing A Hydroxyalkyl (meth)acrylate Functional Monomer Unit For Flexible Cementitious Waterproofing Materials
App 20180179108 - YU; Ming Hua ; et al. | 2018-06-28 |
Semiconductor Device Having Merged Epitaxial Features With Arc-like Bottom Surface And Method Of Making The Same
App 20180174912 - Lee; Yi-Jing ; et al. | 2018-06-21 |
Integrated Circuit And Manufacturing Method Thereof
App 20180175031 - LEE; Yi-Jing ; et al. | 2018-06-21 |
Semiconductor Strips with Undercuts and Methods for Forming the Same
App 20180130896 - Huang; Tai-Chun ; et al. | 2018-05-10 |
Semiconductor Device Having First And Second Epitaxial Materials
App 20180108777 - SU; Lilly ; et al. | 2018-04-19 |
FinFET with Rounded Source/Drain Profile
App 20180090608 - Yu; Ming-Hua ; et al. | 2018-03-29 |
Integrated circuit having field-effect trasistors with dielectric fin sidewall structures and manufacturing method thereof
Grant 9,922,975 - Lee , et al. March 20, 2 | 2018-03-20 |
Structure and Method for Semiconductor Device
App 20180076203 - Lee; Yi-Jing ; et al. | 2018-03-15 |
FinFET with bottom SiGe layer in source/drain
Grant 9,911,829 - Yu , et al. March 6, 2 | 2018-03-06 |
V-shaped epitaxially formed semiconductor layer
Grant 9,905,646 - Kwok , et al. February 27, 2 | 2018-02-27 |
Semiconductor strips with undercuts and methods for forming the same
Grant 9,865,708 - Huang , et al. January 9, 2 | 2018-01-09 |
Semiconductor Device, Static Random Access Memory Cell And Manufacturing Method Of Semiconductor Device
App 20180006039 - LEE; Yi-Jing ; et al. | 2018-01-04 |
Semiconductor device and fabrication method thereof
Grant 9,842,930 - Su , et al. December 12, 2 | 2017-12-12 |
FinFET with rounded source/drain profile
Grant 9,831,345 - Yu , et al. November 28, 2 | 2017-11-28 |
Structure and method for semiconductor device
Grant 9,825,036 - Lee , et al. November 21, 2 | 2017-11-21 |
Semiconductor device, static random access memory cell and manufacturing method of semiconductor device
Grant 9,768,178 - Lee , et al. September 19, 2 | 2017-09-19 |
Structure and Method for Semiconductor Device
App 20170243868 - Lee; Yi-Jing ; et al. | 2017-08-24 |
Semiconductor device and fabrication method thereof
Grant 9,728,641 - Lee , et al. August 8, 2 | 2017-08-08 |
Metrology System And Measurement Method Using The Same
App 20170221739 - HUNG; Ying-Chieh ; et al. | 2017-08-03 |
Epitaxial Growth Methods And Structures Thereof
App 20170221709 - Ueno; Tetsuji ; et al. | 2017-08-03 |
V-Shaped Epitaxially Formed Semiconductor Layer
App 20170194434 - KWOK; TSZ-MEI ; et al. | 2017-07-06 |
FinFET Device Having Flat-Top Epitaxial Features and Method of Making the Same
App 20170186748 - Lee; Yi-Jing ; et al. | 2017-06-29 |
Fin Structure Of Semiconductor Device, Manufacturing Method Thereof, And Manufacturing Method Of Active Region Of Semiconductor Device
App 20170154996 - LIN; Che-Yu ; et al. | 2017-06-01 |
Semiconductor Device, Static Random Access Memory Cell And Manufacturing Method Of Semiconductor Device
App 20170133386 - LEE; Yi-Jing ; et al. | 2017-05-11 |
Integrated Circuit Having Field-effect Trasistors With Dielectric Fin Sidewall Structures And Manufacturing Method Thereof
App 20170098648 - LEE; Yi-Jing ; et al. | 2017-04-06 |
Finfets Having Epitaxial Capping Layer On Fin And Methods For Forming The Same
App 20170084725 - Yu; Ming-Hua ; et al. | 2017-03-23 |
V-shaped epitaxially formed semiconductor layer
Grant 9,601,574 - Kwok , et al. March 21, 2 | 2017-03-21 |
Semiconductor Device And Manufacturing Method Thereof
App 20170054023 - LI; Kun-Mu ; et al. | 2017-02-23 |
FinFETs having epitaxial capping layer on fin and methods for forming the same
Grant 9,520,502 - Yu , et al. December 13, 2 | 2016-12-13 |
Semiconductor Strips with Undercuts and Methods for Forming the Same
App 20160351692 - Huang; Tai-Chun ; et al. | 2016-12-01 |
Semiconductor devices and methods of forming the same
Grant 9,502,561 - Chang , et al. November 22, 2 | 2016-11-22 |
Semiconductor Device And Fabrication Method Thereof
App 20160336448 - LEE; Yen-Ru ; et al. | 2016-11-17 |
Semiconductor Device And Fabrication Method Thereof
App 20160322499 - SU; Lilly ; et al. | 2016-11-03 |
Semiconductor strips with undercuts and methods for forming the same
Grant 9,443,961 - Huang , et al. September 13, 2 | 2016-09-13 |
Semiconductor device and fabrication method thereof
Grant 9,412,868 - Lee , et al. August 9, 2 | 2016-08-09 |
Semiconductor device and fabrication method thereof
Grant 9,401,426 - Su , et al. July 26, 2 | 2016-07-26 |
V-Shaped Epitaxially Formed Semiconductor Layer
App 20160190250 - Kwok; Tsz-Mei ; et al. | 2016-06-30 |
FinFET with Bottom SiGe Layer in Source/Drain
App 20160163836 - Yu; Ming-Hua ; et al. | 2016-06-09 |
FinFET with bottom SiGe layer in source/drain
Grant 9,293,581 - Yu , et al. March 22, 2 | 2016-03-22 |
Bottle-neck Recess In A Semiconductor Device
App 20150270397 - Peng; Eric ; et al. | 2015-09-24 |
Bottle-neck recess in a semiconductor device
Grant 9,054,130 - Peng , et al. June 9, 2 | 2015-06-09 |
FinFET with Bottom SiGe Layer in Source/Drain
App 20150137180 - Yu; Ming-Hua ; et al. | 2015-05-21 |
FinFETs and Methods for Forming the Same
App 20150102392 - Yu; Ming-Hua ; et al. | 2015-04-16 |
Semiconductor Device And Fabrication Method Thereof
App 20150091103 - SU; Lilly ; et al. | 2015-04-02 |
FinFET with bottom SiGe layer in source/drain
Grant 8,963,258 - Yu , et al. February 24, 2 | 2015-02-24 |
Semiconductor device and fabrication method thereof
Grant 8,927,374 - Su , et al. January 6, 2 | 2015-01-06 |
Semiconductor Device And Fabrication Method Thereof
App 20140367768 - LEE; Yen-Ru ; et al. | 2014-12-18 |
Silicon layer for stopping dislocation propagation
Grant 8,846,461 - Lin , et al. September 30, 2 | 2014-09-30 |
FinFET with Bottom SiGe Layer in Source/Drain
App 20140264590 - Yu; Ming-Hua ; et al. | 2014-09-18 |
Semiconductor Strips with Undercuts and Methods for Forming the Same
App 20140264491 - Huang; Tai-Chun ; et al. | 2014-09-18 |
Semiconductor device and fabrication method thereof
Grant 8,835,267 - Lee , et al. September 16, 2 | 2014-09-16 |
FinFET with Rounded Source/Drain Profile
App 20140252489 - Yu; Ming-Hua ; et al. | 2014-09-11 |
Epitaxy silicon on insulator (ESOI)
Grant 8,823,104 - Yu , et al. September 2, 2 | 2014-09-02 |
Epitaxy Silicon on Insulator (ESOI)
App 20130270579 - Yu; Ming-Hua ; et al. | 2013-10-17 |
Method for fabricating a semiconductor device
Grant 8,530,316 - Cheng , et al. September 10, 2 | 2013-09-10 |
Epitaxy silicon on insulator (ESOI)
Grant 8,481,402 - Yu , et al. July 9, 2 | 2013-07-09 |
Method For Fabricating A Semiconductor Device
App 20130122675 - CHENG; Yu-Hung ; et al. | 2013-05-16 |
Silicon Layer for Stopping Dislocation Propagation
App 20130122674 - Lin; Hsien-Hsin ; et al. | 2013-05-16 |
Semiconductor Device And Fabrication Method Thereof
App 20130082309 - SU; Lilly ; et al. | 2013-04-04 |
Semiconductor Device And Fabrication Method Thereof
App 20130084682 - LEE; Yen-Ru ; et al. | 2013-04-04 |
Method for fabricating a semiconductor device
Grant 8,377,784 - Cheng , et al. February 19, 2 | 2013-02-19 |
Silicon layer for stopping dislocation propagation
Grant 8,344,447 - Lin , et al. January 1, 2 | 2013-01-01 |
MOS devices with partial stressor channel
Grant 8,274,071 - Yu , et al. September 25, 2 | 2012-09-25 |
Strained channel transistor
Grant 8,253,177 - Yu , et al. August 28, 2 | 2012-08-28 |
Source/drain strained layers
Grant 8,168,501 - Yu , et al. May 1, 2 | 2012-05-01 |
Epitaxy Silicon on Insulator (ESOI)
App 20120043641 - Yu; Ming-Hua ; et al. | 2012-02-23 |
Epitaxy silicon on insulator (ESOI)
Grant 8,049,277 - Yu , et al. November 1, 2 | 2011-11-01 |
Method For Fabricating A Semiconductor Device
App 20110263092 - CHENG; Yu-Hung ; et al. | 2011-10-27 |
Source/Drain Strained Layers
App 20110230022 - Yu; Ming-Hua ; et al. | 2011-09-22 |
Source/drain strained layers
Grant 7,973,337 - Yu , et al. July 5, 2 | 2011-07-05 |
MOS Devices with Partial Stressor Channel
App 20110101305 - Yu; Ming-Hua ; et al. | 2011-05-05 |
Bottle-neck Recess In A Semiconductor Device
App 20110049567 - Peng; Eric ; et al. | 2011-03-03 |
MOS devices with partial stressor channel
Grant 7,868,317 - Yu , et al. January 11, 2 | 2011-01-11 |
Epitaxy Silicon On Insulator (ESOI)
App 20100301447 - Yu; Ming-Hua ; et al. | 2010-12-02 |
Source/Drain Strained Layers
App 20100289086 - Yu; Ming-Hua ; et al. | 2010-11-18 |
Epitaxy silicon on insulator (ESOI)
Grant 7,803,690 - Yu , et al. September 28, 2 | 2010-09-28 |
Source/drain strained layers
Grant 7,781,799 - Yu , et al. August 24, 2 | 2010-08-24 |
Strained Channel Transistor
App 20100151648 - Yu; Ming-Hua ; et al. | 2010-06-17 |
Strained channel transistor
Grant 7,700,452 - Yu , et al. April 20, 2 | 2010-04-20 |
MOS Devices with Partial Stressor Channel
App 20090224337 - Yu; Ming-Hua ; et al. | 2009-09-10 |
MOS devices with partial stressor channel
Grant 7,554,110 - Yu , et al. June 30, 2 | 2009-06-30 |
Source/Drain Strained Layers
App 20090108290 - Yu; Ming-Hua ; et al. | 2009-04-30 |
Strained Channel Transistor
App 20090061586 - Yu; Ming-Hua ; et al. | 2009-03-05 |
SiGe selective growth without a hard mask
Grant 7,494,884 - Lin , et al. February 24, 2 | 2009-02-24 |
SiGe or SiC layer on STI sidewalls
App 20080290420 - Yu; Ming-Hua ; et al. | 2008-11-27 |
Silicon layer for stopping dislocation propagation
App 20080246057 - Lin; Hsien-Hsin ; et al. | 2008-10-09 |
SiGe selective growth without a hard mask
App 20080083948 - Lin; Hsien-Hsin ; et al. | 2008-04-10 |
MOS devices with partial stressor channel
App 20080067557 - Yu; Ming-Hua ; et al. | 2008-03-20 |
Epitaxy silicon on insulator (ESOI)
App 20070298593 - Yu; Ming-Hua ; et al. | 2007-12-27 |
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